Produkte > PMZ

Description: MOSFET N-CH 30V 480MA DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 480mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 200mA, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-883
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.89 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 25 V

auf Bestellung 21896 Stücke:

Lieferzeit 10-14 Tag (e)

24+	0.74 EUR
34+	0.52 EUR
100+	0.26 EUR
500+	0.21 EUR
1000+	0.16 EUR
2000+	0.13 EUR

Mindestbestellmenge: 24

PMZ1000UN,315

Description: NXP - PMZ1000UN,315 - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)

auf Bestellung 10843200 Stücke:

Lieferzeit 14-21 Tag (e)

PMZ1000UN,315

Description: MOSFET N-CH 30V 480MA DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 480mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 200mA, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-883
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.89 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 25 V

auf Bestellung 10000 Stücke:

Lieferzeit 10-14 Tag (e)

10000+	0.11 EUR

Mindestbestellmenge: 10000

PMZ1000UN,315

Trans MOSFET N-CH 30V 0.48A 3-Pin DFN T/R

Produkt ist nicht verfügbar

PMZ1000UN,315

Description: NEXPERIA - PMZ1000UN,315 - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)

auf Bestellung 10843200 Stücke:

Lieferzeit 14-21 Tag (e)

PMZ1000UN,315

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 480mA; Idm: 1.8A; 350mW
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.48A
Pulsed drain current: 1.8A
Power dissipation: 0.35W
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 0.89nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 10000 Stücke

Produkt ist nicht verfügbar

PMZ1000UN,315

Produkt ist nicht verfügbar

PMZ1000UN,315

Description: NEXPERIA - PMZ1000UN,315 - Leistungs-MOSFET, n-Kanal, 30 V, 480 mA, 1 ohm, DFN1006, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 480mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 700mV
euEccn: NLR
Verlustleistung: 350mW
Bauform - Transistor: DFN1006
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 4.5V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 1ohm

auf Bestellung 17961 Stücke:

Lieferzeit 14-21 Tag (e)

PMZ1000UN,315

MOSFET PMZ1000UN/SOT883/XQFN3

auf Bestellung 10845 Stücke:

Lieferzeit 10-14 Tag (e)

4+	0.78 EUR
10+	0.58 EUR
100+	0.33 EUR
500+	0.22 EUR
1000+	0.17 EUR
2500+	0.15 EUR
10000+	0.12 EUR

Mindestbestellmenge: 4

PMZ1200UPEYL

Trans MOSFET P-CH 30V 0.41A 3-Pin DFN T/R

Produkt ist nicht verfügbar

PMZ1200UPEYL

Description: MOSFET P-CH 30V 410MA DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 410mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 410mA, 4.5V
Power Dissipation (Max): 310mW (Ta), 1.67W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-883
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 43.2 pF @ 15 V

auf Bestellung 9875 Stücke:

Lieferzeit 10-14 Tag (e)

33+	0.55 EUR
46+	0.39 EUR
100+	0.2 EUR
500+	0.16 EUR
1000+	0.12 EUR
2000+	0.099 EUR
5000+	0.095 EUR

Mindestbestellmenge: 33

PMZ1200UPEYL

Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -260mA; Idm: -1.7A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -260mA
Pulsed drain current: -1.7A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 2.4Ω
Mounting: SMD
Gate charge: 1.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 10000 Stücke

Produkt ist nicht verfügbar

PMZ1200UPEYL

Produkt ist nicht verfügbar

PMZ1200UPEYL

Description: NEXPERIA - PMZ1200UPEYL - Leistungs-MOSFET, p-Kanal, 30 V, 410 mA, 1.2 ohm, SOT-883, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30
rohsCompliant: YES
Dauer-Drainstrom Id: 410
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Verlustleistung Pd: 310
Gate-Source-Schwellenspannung, max.: 700
euEccn: NLR
Verlustleistung: 310
Bauform - Transistor: SOT-883
Anzahl der Pins: 3
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: p-Kanal
Kanaltyp: p-Kanal
Betriebswiderstand, Rds(on): 1.2
Rds(on)-Prüfspannung: 4.5
Betriebstemperatur, max.: 150
Drain-Source-Durchgangswiderstand: 1.2
SVHC: No SVHC (17-Jan-2023)

auf Bestellung 2343 Stücke:

Lieferzeit 14-21 Tag (e)

PMZ1200UPEYL

MOSFET PMZ1200UPE/SOT883/XQFN3

auf Bestellung 6789 Stücke:

Lieferzeit 10-14 Tag (e)

5+	0.63 EUR
10+	0.47 EUR
100+	0.26 EUR
500+	0.16 EUR
1000+	0.12 EUR
2500+	0.11 EUR
5000+	0.099 EUR

Mindestbestellmenge: 5

PMZ1200UPEYL

Description: NEXPERIA - PMZ1200UPEYL - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (23-Jan-2024)

auf Bestellung 4885 Stücke:

Lieferzeit 14-21 Tag (e)

PMZ1200UPEYL

Description: MOSFET P-CH 30V 410MA DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 410mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 410mA, 4.5V
Power Dissipation (Max): 310mW (Ta), 1.67W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-883
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 43.2 pF @ 15 V

Produkt ist nicht verfügbar

PMZ1200UPEYL

Description: NEXPERIA - PMZ1200UPEYL - Leistungs-MOSFET, p-Kanal, 30 V, 410 mA, 1.2 ohm, SOT-883, Oberflächenmontage
tariffCode: 85412100
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
Verlustleistung: 310
Kanaltyp: p-Kanal
euEccn: NLR
hazardous: false
Drain-Source-Durchgangswiderstand: 1.2
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
SVHC: No SVHC (17-Jan-2023)

auf Bestellung 2343 Stücke:

Lieferzeit 14-21 Tag (e)

PMZ130UNE315

Description: SMALL SIGNAL N-CHANNEL MOSFET

Produkt ist nicht verfügbar

PMZ130UNEYL

MOSFET PMZ130UNE/SOT883/XQFN3

auf Bestellung 52697 Stücke:

Lieferzeit 10-14 Tag (e)

5+	0.61 EUR
10+	0.37 EUR
100+	0.18 EUR
1000+	0.12 EUR
10000+	0.11 EUR
20000+	0.1 EUR

Mindestbestellmenge: 5

PMZ130UNEYL

Description: MOSFET N-CH 20V 1.8A DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.8A, 4.5V
Power Dissipation (Max): 350mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-883
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 10 V

auf Bestellung 20000 Stücke:

Lieferzeit 10-14 Tag (e)

10000+	0.12 EUR

Mindestbestellmenge: 10000

PMZ130UNEYL

Trans MOSFET N-CH 20V 1.8A 3-Pin DFN T/R

auf Bestellung 1 Stücke:

Lieferzeit 14-21 Tag (e)

PMZ130UNEYL

Description: NEXPERIA - PMZ130UNEYL - Leistungs-MOSFET, n-Kanal, 20 V, 1.8 A, 0.12 ohm, SOT-883, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 20
rohsCompliant: YES
Dauer-Drainstrom Id: 1.8
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Verlustleistung Pd: 350
Gate-Source-Schwellenspannung, max.: 700
euEccn: NLR
Verlustleistung: 350
Bauform - Transistor: SOT-883
Anzahl der Pins: 3
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.12
Rds(on)-Prüfspannung: 4.5
Betriebstemperatur, max.: 150
Drain-Source-Durchgangswiderstand: 0.12
SVHC: No SVHC (17-Jan-2023)

auf Bestellung 23458 Stücke:

Lieferzeit 14-21 Tag (e)

PMZ130UNEYL

Description: MOSFET N-CH 20V 1.8A DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.8A, 4.5V
Power Dissipation (Max): 350mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-883
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 10 V

auf Bestellung 24067 Stücke:

Lieferzeit 10-14 Tag (e)

28+	0.65 EUR
39+	0.46 EUR
100+	0.23 EUR
500+	0.21 EUR
1000+	0.16 EUR
2000+	0.14 EUR

Mindestbestellmenge: 28

PMZ130UNEYL

Trans MOSFET N-CH 20V 1.8A 3-Pin DFN T/R

Produkt ist nicht verfügbar

PMZ130UNEYL

Trans MOSFET N-CH 20V 1.8A 3-Pin DFN T/R

auf Bestellung 20000 Stücke:

Lieferzeit 14-21 Tag (e)

PMZ130UNEYL

Description: NEXPERIA - PMZ130UNEYL - Leistungs-MOSFET, n-Kanal, 20 V, 1.8 A, 0.12 ohm, SOT-883, Oberflächenmontage
tariffCode: 85412100
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
Verlustleistung: 350
Kanaltyp: n-Kanal
euEccn: NLR
hazardous: false
Drain-Source-Durchgangswiderstand: 0.12
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
SVHC: No SVHC (17-Jan-2023)

auf Bestellung 23458 Stücke:

Lieferzeit 14-21 Tag (e)

PMZ130UNEYL

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 1.2A; Idm: 8A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.2A
Pulsed drain current: 8A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 0.22Ω
Mounting: SMD
Gate charge: 1.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 10000 Stücke

Produkt ist nicht verfügbar

PMZ130UNEYL

Produkt ist nicht verfügbar

PMZ200UNE

MOSFET

Produkt ist nicht verfügbar

PMZ200UNE,315

Old Part PMZ200UNE^NXP

Produkt ist nicht verfügbar

PMZ200UNE/S500YL

Description: NEXPERIA - PMZ200UNE/S500YL - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (23-Jan-2024)

auf Bestellung 8900 Stücke:

Lieferzeit 14-21 Tag (e)

PMZ200UNEYL

Trans MOSFET N-CH 30V 1.4A 3-Pin DFN T/R

Produkt ist nicht verfügbar

PMZ200UNEYL

MOSFET PMZ200UNE/SOT883/XQFN3

auf Bestellung 13010 Stücke:

Lieferzeit 10-14 Tag (e)

5+	0.62 EUR
10+	0.47 EUR
100+	0.2 EUR
1000+	0.14 EUR
2500+	0.13 EUR
10000+	0.12 EUR
20000+	0.11 EUR

Mindestbestellmenge: 5

PMZ200UNEYL

Description: MOSFET N-CH 30V 1.4A DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.4A, 4.5V
Power Dissipation (Max): 350mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-883
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 89 pF @ 15 V

auf Bestellung 19421 Stücke:

Lieferzeit 10-14 Tag (e)

23+	0.77 EUR
33+	0.54 EUR
100+	0.27 EUR
500+	0.22 EUR
1000+	0.16 EUR
2000+	0.14 EUR
5000+	0.13 EUR

Mindestbestellmenge: 23

PMZ200UNEYL

Trans MOSFET N-CH 30V 1.4A 3-Pin DFN T/R

Produkt ist nicht verfügbar

PMZ200UNEYL

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 900mA; Idm: 5A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.9A
Pulsed drain current: 5A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 410mΩ
Mounting: SMD
Gate charge: 2.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 10000 Stücke

Produkt ist nicht verfügbar

PMZ200UNEYL

Produkt ist nicht verfügbar

PMZ200UNEYL

Description: MOSFET N-CH 30V 1.4A DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.4A, 4.5V
Power Dissipation (Max): 350mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-883
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 89 pF @ 15 V

auf Bestellung 10000 Stücke:

Lieferzeit 10-14 Tag (e)

10000+	0.11 EUR

Mindestbestellmenge: 10000

PMZ200UNEYL

Trans MOSFET N-CH 30V 1.4A 3-Pin DFN T/R

Produkt ist nicht verfügbar

PMZ2035RE6100K150R06

Category: Paper capacitors
Description: Capacitor: paper; X1; 100nF; 440VAC; Pitch: 25.4mm; ±10%; THT; PMZ203
Mounting: THT
Capacitance: 100nF
Manufacturer series: PMZ203
Max. operating voltage: 440V AC; 1000V DC
Tolerance: ±10%
Type of capacitor: paper
Lead length: 6mm
Terminal pitch: 25.4mm
Alias: P435EJ104K440CH151
Kind of capacitor: X1

Produkt ist nicht verfügbar

PMZ2035RE6100K150R06

Produkt ist nicht verfügbar

PMZ2035RE6100K150R06

Film Capacitors 440V 0.1uF 10% LS=25.4mm

auf Bestellung 62 Stücke:

Lieferzeit 10-14 Tag (e)

1+	7 EUR
10+	5.65 EUR
50+	4.84 EUR
100+	4.4 EUR
500+	3.27 EUR
864+	3.04 EUR
1728+	2.92 EUR

PMZ2035RE6100K150R06

Description: CAP FILM 0.1UF 10% 1KVDC RADIAL
Tolerance: ±10%
Packaging: Box
Package / Case: Radial
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Applications: EMI, RFI Suppression
Lead Spacing: 1.000" (25.40mm)
Termination: PC Pins
Ratings: X1
Dielectric Material: Paper, Metallized
Voltage Rating - AC: 440V
Voltage Rating - DC: 1000V (1kV)
Height - Seated (Max): 0.748" (19.00mm)
Part Status: Active
Capacitance: 0.1 µF
Size / Dimension: 1.201" L x 0.476" W (30.50mm x 12.10mm)

auf Bestellung 2381 Stücke:

Lieferzeit 10-14 Tag (e)

3+	6.97 EUR
10+	5.62 EUR
50+	4.84 EUR
100+	4.39 EUR
500+	3.26 EUR
1000+	3.04 EUR

Mindestbestellmenge: 3

PMZ2035RE6100K150R30

Category: THT Film Capacitors
Description: 100nF; 12.1x19x30.5mm; THT; ±10%; 25.4mm; Filter: RC; 440VAC; 150Ω
Capacitance: 0.1µF
Body dimensions: 12.1x19x30.5mm
Mounting: THT
Tolerance: ±10%
Terminal pitch: 25.4mm
Type of filter: RC
Kind of capacitor: X1
Max. operating voltage: 440V AC
Resistance: 150Ω

Produkt ist nicht verfügbar

PMZ2035RE6100K150R30

Film Capacitors 440volts 0.10uF 10% LS 25.4mm

auf Bestellung 440 Stücke:

Lieferzeit 10-14 Tag (e)

1+	9.15 EUR
10+	7.87 EUR
50+	7.13 EUR
100+	5.9 EUR
300+	5.49 EUR
500+	5.12 EUR
1000+	4.77 EUR

PMZ2035RE6100K150R30

auf Bestellung 298 Stücke:

Lieferzeit 10-14 Tag (e)

2+	10.31 EUR
10+	9.27 EUR
50+	8.04 EUR
100+	7.01 EUR

Mindestbestellmenge: 2

PMZ2035RE6100K150R30

Category: Paper capacitors
Description: Capacitor: paper; X1; 100nF; 440VAC; Pitch: 25.4mm; ±10%; THT; PMZ203
Mounting: THT
Capacitance: 100nF
Manufacturer series: PMZ203
Max. operating voltage: 440V AC; 1000V DC
Tolerance: ±10%
Type of capacitor: paper
Lead length: 30mm
Terminal pitch: 25.4mm
Alias: P435EJ104K440AH151
Kind of capacitor: X1

auf Bestellung 14 Stücke:

Lieferzeit 7-14 Tag (e)

14+	5.11 EUR
22+	3.25 EUR

Mindestbestellmenge: 14

PMZ2035RE6100K150R30

Category: Paper capacitors
Description: Capacitor: paper; X1; 100nF; 440VAC; Pitch: 25.4mm; ±10%; THT; PMZ203
Mounting: THT
Capacitance: 100nF
Manufacturer series: PMZ203
Max. operating voltage: 440V AC; 1000V DC
Tolerance: ±10%
Type of capacitor: paper
Lead length: 30mm
Terminal pitch: 25.4mm
Alias: P435EJ104K440AH151
Kind of capacitor: X1

auf Bestellung 14 Stücke:

Lieferzeit 14-21 Tag (e)

14+	5.11 EUR

Mindestbestellmenge: 14

PMZ2035RE6100K150R30

METALLIZED POLYESTER FILM CAPACITOR DESIGNED FOR A.C. APPLICATIONS

Produkt ist nicht verfügbar

PMZ2035RE6150K330

auf Bestellung 1000 Stücke:

Lieferzeit 21-28 Tag (e)

PMZ2035RE6150K330R30

Cap RC Network 0.15uF 1000V 10% 330 Ohm 30% 1R/1C 85C Bulk

Produkt ist nicht verfügbar

PMZ2081MD6100M100J105

Cap RC Network 0.1uF 250VAC 20% 100 Ohm 30% 2 85C

Produkt ist nicht verfügbar

PMZ250UN

auf Bestellung 120000 Stücke:

Lieferzeit 21-28 Tag (e)

PMZ250UN,315

Description: MOSFET N-CH 20V 2.28A DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.28A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 200mA, 4.5V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-883
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.89 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 20 V

Produkt ist nicht verfügbar

PMZ250UN,315

Trans MOSFET N-CH 20V 2.28A 3-Pin DFN T/R

Produkt ist nicht verfügbar

PMZ250UN,315

Description: MOSFET N-CH 20V 2.28A DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.28A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 200mA, 4.5V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-883
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.89 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 20 V

Produkt ist nicht verfügbar

PMZ250UN,315

Description: NXP - PMZ250UN,315 - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)

auf Bestellung 83637 Stücke:

Lieferzeit 14-21 Tag (e)

PMZ270XN

auf Bestellung 120000 Stücke:

Lieferzeit 21-28 Tag (e)

PMZ270XN,315

Trans MOSFET N-CH 20V 2.15A 3-Pin DFN T/R

Produkt ist nicht verfügbar

PMZ270XN,315

Description: MOSFET N-CH 20V 2.15A DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.15A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 200mA, 4.5V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-883
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.72 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 34 pF @ 20 V

Produkt ist nicht verfügbar

PMZ270XN,315

Description: MOSFET N-CH 20V 2.15A DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.15A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 200mA, 4.5V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-883
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.72 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 34 pF @ 20 V

Produkt ist nicht verfügbar

PMZ290UN315

Description: SMALL SIGNAL FET

auf Bestellung 19000 Stücke:

Lieferzeit 10-14 Tag (e)

PMZ290UNE2YL

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 800mA; Idm: 4A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.8A
Pulsed drain current: 4A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 475mΩ
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 10000 Stücke

Produkt ist nicht verfügbar

PMZ290UNE2YL

Description: NEXPERIA - PMZ290UNE2YL - Leistungs-MOSFET, n-Kanal, 20 V, 1.2 A, 0.27 ohm, SOT-883, Oberflächenmontage
tariffCode: 85412100
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
Verlustleistung: 350
Kanaltyp: n-Kanal
euEccn: NLR
hazardous: false
Drain-Source-Durchgangswiderstand: 0.27
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
SVHC: No SVHC (17-Jan-2023)

auf Bestellung 11432 Stücke:

Lieferzeit 14-21 Tag (e)

PMZ290UNE2YL

Description: NEXPERIA - PMZ290UNE2YL - Leistungs-MOSFET, n-Kanal, 20 V, 1.2 A, 0.27 ohm, SOT-883, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 20V
rohsCompliant: YES
Dauer-Drainstrom Id: 1.2A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Verlustleistung Pd: 350mW
Gate-Source-Schwellenspannung, max.: 700mV
euEccn: NLR
Verlustleistung: 350mW
Bauform - Transistor: SOT-883
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.27ohm
Rds(on)-Prüfspannung: 4.5V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.27ohm
SVHC: No SVHC (17-Jan-2023)

auf Bestellung 7802 Stücke:

Lieferzeit 14-21 Tag (e)

PMZ290UNE2YL

Description: MOSFET N-CH 20V 1.2A DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 320mOhm @ 1.2A, 4.5V
Power Dissipation (Max): 350mW (Ta), 5.43W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-883
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 10 V

auf Bestellung 121600 Stücke:

Lieferzeit 10-14 Tag (e)

29+	0.62 EUR
42+	0.42 EUR
100+	0.21 EUR
500+	0.17 EUR
1000+	0.12 EUR
2000+	0.1 EUR
5000+	0.096 EUR

Mindestbestellmenge: 29

PMZ290UNE2YL

Trans MOSFET N-CH 20V 1.2A 3-Pin DFN T/R

auf Bestellung 110000 Stücke:

Lieferzeit 14-21 Tag (e)

PMZ290UNE2YL

Produkt ist nicht verfügbar

PMZ290UNE2YL

Description: MOSFET N-CH 20V 1.2A DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 320mOhm @ 1.2A, 4.5V
Power Dissipation (Max): 350mW (Ta), 5.43W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-883
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 10 V

auf Bestellung 110000 Stücke:

Lieferzeit 10-14 Tag (e)

10000+	0.079 EUR
30000+	0.078 EUR
50000+	0.07 EUR
100000+	0.062 EUR

Mindestbestellmenge: 10000

PMZ290UNE2YL

MOSFET PMZ290UNE2/SOT883/XQFN3

auf Bestellung 124883 Stücke:

Lieferzeit 10-14 Tag (e)

5+	0.62 EUR
10+	0.42 EUR
100+	0.18 EUR
1000+	0.11 EUR
2500+	0.095 EUR
10000+	0.079 EUR
25000+	0.074 EUR

Mindestbestellmenge: 5

PMZ290UNE315

Description: SMALL SIGNAL N-CHANNEL MOSFET

auf Bestellung 18000 Stücke:

Lieferzeit 10-14 Tag (e)

PMZ290UNEYL

MOSFET 20V N-channel Trench MOSFET

auf Bestellung 6257 Stücke:

Lieferzeit 10-14 Tag (e)

PMZ290UNEYL

Description: NEXPERIA PMZ290U - 20V, N-CHANNE

auf Bestellung 78532 Stücke:

Lieferzeit 10-14 Tag (e)

15000+	0.037 EUR

Mindestbestellmenge: 15000

PMZ290UNYL

Trans MOSFET N-CH 20V 1A 3-Pin DFN T/R

Produkt ist nicht verfügbar

PMZ290UNYL

Description: MOSFET DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Supplier Device Package: SOT-883
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V

Produkt ist nicht verfügbar

PMZ290UNYL

Description: MOSFET DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Supplier Device Package: SOT-883
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V

Produkt ist nicht verfügbar

PMZ3-N200RM (PTC 200R 100°C 270V 200R ±20% 100°C±5°C 270V)
Produktcode: 126932

Passive Bauelemente > Thermistoren

auf Bestellung 9 Stück:

Lieferzeit 21-28 Tag (e)

PMZ320UPE/S500YL

Description: PMZ320UPEY/L - P Channel MOSFET
Packaging: Bulk
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 510mOhm @ 1A, 4.5V
Power Dissipation (Max): 350mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 0.95V @ 250µA
Supplier Device Package: DFN1006-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 122 pF @ 15 V

auf Bestellung 9800 Stücke:

Lieferzeit 10-14 Tag (e)

5828+	0.088 EUR

Mindestbestellmenge: 5828

PMZ320UPE/S500YL

Description: NEXPERIA - PMZ320UPE/S500YL - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (23-Jan-2024)

auf Bestellung 9800 Stücke:

Lieferzeit 14-21 Tag (e)

PMZ320UPEYL

Trans MOSFET P-CH 30V 1A 3-Pin DFN T/R

auf Bestellung 400000 Stücke:

Lieferzeit 14-21 Tag (e)

20000+	0.087 EUR

Mindestbestellmenge: 20000

PMZ320UPEYL

Description: MOSFET P-CH 30V 1A DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 510mOhm @ 1A, 4.5V
Power Dissipation (Max): 350mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-883
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 122 pF @ 15 V

auf Bestellung 33886 Stücke:

Lieferzeit 10-14 Tag (e)

26+	0.69 EUR
38+	0.47 EUR
100+	0.24 EUR
500+	0.19 EUR
1000+	0.14 EUR
2000+	0.12 EUR

Mindestbestellmenge: 26

PMZ320UPEYL

MOSFET PMZ320UPE/SOT883/XQFN3

auf Bestellung 39827 Stücke:

Lieferzeit 10-14 Tag (e)

4+	0.71 EUR
10+	0.45 EUR
100+	0.27 EUR
500+	0.2 EUR
1000+	0.13 EUR
5000+	0.12 EUR
10000+	0.1 EUR

Mindestbestellmenge: 4

PMZ320UPEYL

Description: NEXPERIA - PMZ320UPEYL - Leistungs-MOSFET, p-Kanal, 30 V, 1 A, 0.43 ohm, SOT-883, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30
rohsCompliant: YES
Dauer-Drainstrom Id: 1
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Verlustleistung Pd: 350
Gate-Source-Schwellenspannung, max.: 700
euEccn: NLR
Verlustleistung: 350
Bauform - Transistor: SOT-883
Anzahl der Pins: 3
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: p-Kanal
Kanaltyp: p-Kanal
Betriebswiderstand, Rds(on): 0.43
Rds(on)-Prüfspannung: 4.5
Betriebstemperatur, max.: 150
Drain-Source-Durchgangswiderstand: 0.43
SVHC: No SVHC (17-Jan-2023)

auf Bestellung 3500 Stücke:

Lieferzeit 14-21 Tag (e)

PMZ320UPEYL

Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -600mA; Idm: -4A
Mounting: SMD
Drain current: -0.6A
On-state resistance: 810mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 1.4nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -4A
Case: DFN1006-3; SOT883
Drain-source voltage: -30V

Produkt ist nicht verfügbar

PMZ320UPEYL

Trans MOSFET P-CH 30V 1A 3-Pin DFN T/R

auf Bestellung 20000 Stücke:

Lieferzeit 14-21 Tag (e)

10000+	0.094 EUR

Mindestbestellmenge: 10000

PMZ320UPEYL

Produkt ist nicht verfügbar

PMZ320UPEYL

Trans MOSFET P-CH 30V 1A 3-Pin DFN T/R

auf Bestellung 20000 Stücke:

Lieferzeit 14-21 Tag (e)

10000+	0.094 EUR

Mindestbestellmenge: 10000

PMZ320UPEYL

Description: MOSFET P-CH 30V 1A DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 510mOhm @ 1A, 4.5V
Power Dissipation (Max): 350mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-883
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 122 pF @ 15 V

auf Bestellung 20000 Stücke:

Lieferzeit 10-14 Tag (e)

10000+	0.1 EUR

Mindestbestellmenge: 10000

PMZ320UPEYL

Trans MOSFET P-CH 30V 1A 3-Pin DFN T/R

Produkt ist nicht verfügbar

PMZ320UPEYL

Trans MOSFET P-CH 30V 1A 3-Pin DFN T/R

auf Bestellung 400000 Stücke:

Lieferzeit 14-21 Tag (e)

10000+	0.081 EUR

Mindestbestellmenge: 10000

PMZ320UPEYL

Description: NEXPERIA - PMZ320UPEYL - Leistungs-MOSFET, p-Kanal, 30 V, 1 A, 0.43 ohm, SOT-883, Oberflächenmontage
tariffCode: 85412100
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
Verlustleistung: 350
Kanaltyp: p-Kanal
euEccn: NLR
hazardous: false
Drain-Source-Durchgangswiderstand: 0.43
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
SVHC: No SVHC (17-Jan-2023)

auf Bestellung 3500 Stücke:

Lieferzeit 14-21 Tag (e)

PMZ350UPE/S500YL

Description: PMZ350UPEY/L - 20V, P-Channel MO
Packaging: Bulk
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 300mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 3.13W (Tc)
Vgs(th) (Max) @ Id: 0.95V @ 250µA
Supplier Device Package: DFN1006-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 127 pF @ 10 V

auf Bestellung 8800 Stücke:

Lieferzeit 10-14 Tag (e)

8800+	0.07 EUR

Mindestbestellmenge: 8800

PMZ350UPE/S500YL

Description: NEXPERIA - PMZ350UPE/S500YL - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (23-Jan-2024)

auf Bestellung 8800 Stücke:

Lieferzeit 14-21 Tag (e)

PMZ350UPEYL

Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -700mA; Idm: -2.8A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.7A
Pulsed drain current: -2.8A
Case: DFN1006-3; SOT883
On-state resistance: 645mΩ
Mounting: SMD
Gate charge: 1.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate

auf Bestellung 9835 Stücke:

Lieferzeit 14-21 Tag (e)

368+	0.19 EUR
763+	0.094 EUR
844+	0.085 EUR
1060+	0.067 EUR
1122+	0.064 EUR

Mindestbestellmenge: 368

PMZ350UPEYL

Trans MOSFET P-CH 20V 1A 3-Pin DFN T/R

auf Bestellung 1995 Stücke:

Lieferzeit 14-21 Tag (e)

365+	0.43 EUR
445+	0.34 EUR
449+	0.32 EUR
672+	0.21 EUR
677+	0.2 EUR
953+	0.13 EUR
1249+	0.098 EUR

Mindestbestellmenge: 365

PMZ350UPEYL

Description: NEXPERIA - PMZ350UPEYL - Leistungs-MOSFET, p-Kanal, 20 V, 1 A, 0.33 ohm, DFN1006, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 20
rohsCompliant: YES
Dauer-Drainstrom Id: 1
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Verlustleistung Pd: 360
Gate-Source-Schwellenspannung, max.: 700
euEccn: NLR
Verlustleistung: 360
Bauform - Transistor: DFN1006
Anzahl der Pins: 3
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: p-Kanal
Kanaltyp: p-Kanal
Betriebswiderstand, Rds(on): 0.33
Rds(on)-Prüfspannung: 4.5
Betriebstemperatur, max.: 150
Drain-Source-Durchgangswiderstand: 0.33
SVHC: No SVHC (17-Jan-2023)

auf Bestellung 4202 Stücke:

Lieferzeit 14-21 Tag (e)

PMZ350UPEYL

auf Bestellung 9835 Stücke:

Lieferzeit 7-14 Tag (e)

368+	0.19 EUR
763+	0.094 EUR
844+	0.085 EUR
1060+	0.067 EUR
1122+	0.064 EUR

Mindestbestellmenge: 368

PMZ350UPEYL

Trans MOSFET P-CH 20V 1A 3-Pin DFN T/R

auf Bestellung 1995 Stücke:

Lieferzeit 14-21 Tag (e)

672+	0.23 EUR
677+	0.22 EUR
953+	0.15 EUR
1249+	0.11 EUR

Mindestbestellmenge: 672

PMZ350UPEYL

Trans MOSFET P-CH 20V 1A 3-Pin DFN T/R

auf Bestellung 10000 Stücke:

Lieferzeit 14-21 Tag (e)

PMZ350UPEYL

Trans MOSFET P-CH 20V 1A 3-Pin DFN T/R

auf Bestellung 10000 Stücke:

Lieferzeit 14-21 Tag (e)

10000+	0.096 EUR

Mindestbestellmenge: 10000

PMZ350UPEYL

Description: MOSFET P-CH 20V 1A DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 300mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 3.125W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-883
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 127 pF @ 10 V

auf Bestellung 23718 Stücke:

Lieferzeit 10-14 Tag (e)

30+	0.6 EUR
43+	0.42 EUR
100+	0.21 EUR
500+	0.17 EUR
1000+	0.13 EUR
2000+	0.11 EUR
5000+	0.1 EUR

Mindestbestellmenge: 30

PMZ350UPEYL

Trans MOSFET P-CH 20V 1A 3-Pin DFN T/R

Produkt ist nicht verfügbar

PMZ350UPEYL

Description: NEXPERIA - PMZ350UPEYL - Leistungs-MOSFET, p-Kanal, 20 V, 1 A, 0.33 ohm, DFN1006, Oberflächenmontage
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
Verlustleistung: 360
Kanaltyp: p-Kanal
euEccn: NLR
hazardous: false
Drain-Source-Durchgangswiderstand: 0.33
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
SVHC: No SVHC (17-Jan-2023)

auf Bestellung 4202 Stücke:

Lieferzeit 14-21 Tag (e)

PMZ350UPEYL

MOSFET PMZ350UPE/SOT883/XQFN3

auf Bestellung 14172 Stücke:

Lieferzeit 10-14 Tag (e)

5+	0.61 EUR
10+	0.43 EUR
100+	0.2 EUR
1000+	0.12 EUR
2500+	0.11 EUR
10000+	0.084 EUR
20000+	0.081 EUR

Mindestbestellmenge: 5

PMZ350UPEYL

Trans MOSFET P-CH 20V 1A 3-Pin DFN T/R

auf Bestellung 10000 Stücke:

Lieferzeit 14-21 Tag (e)

10000+	0.09 EUR

Mindestbestellmenge: 10000

PMZ350UPEYL

Description: MOSFET P-CH 20V 1A DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 300mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 3.125W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-883
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 127 pF @ 10 V

auf Bestellung 10000 Stücke:

Lieferzeit 10-14 Tag (e)

10000+	0.09 EUR

Mindestbestellmenge: 10000

PMZ350XN

auf Bestellung 120000 Stücke:

Lieferzeit 21-28 Tag (e)

PMZ350XN,315

Trans MOSFET N-CH 30V 1.87A 3-Pin DFN T/R

Produkt ist nicht verfügbar

PMZ350XN,315

Description: MOSFET N-CH 30V 1.87A DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.87A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 200mA, 4.5V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-883
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.65 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 37 pF @ 25 V

Produkt ist nicht verfügbar

PMZ350XN,315

Description: MOSFET N-CH 30V 1.87A DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.87A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 200mA, 4.5V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-883
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.65 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 37 pF @ 25 V

Produkt ist nicht verfügbar

PMZ370UNE,315

Description: 0.9A, 30V, N CHANNEL, MOSFET, S
Packaging: Bulk
Part Status: Active

Produkt ist nicht verfügbar

PMZ370UNE315

Description: SMALL SIGNAL N-CHANNEL MOSFET
Packaging: Bulk
Part Status: Active

Produkt ist nicht verfügbar

PMZ370UNEYL

Description: MOSFET N-CH 30V 900MA DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 490mOhm @ 500mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 1.05V @ 250µA
Supplier Device Package: SOT-883
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 78 pF @ 25 V

auf Bestellung 25311 Stücke:

Lieferzeit 10-14 Tag (e)

28+	0.65 EUR
39+	0.46 EUR
100+	0.23 EUR
500+	0.21 EUR
1000+	0.16 EUR
2000+	0.14 EUR

Mindestbestellmenge: 28

PMZ370UNEYL

Trans MOSFET N-CH 30V 0.9A 3-Pin DFN T/R

Produkt ist nicht verfügbar

PMZ370UNEYL

MOSFET PMZ370UNE/SOT883/XQFN3

auf Bestellung 7935 Stücke:

Lieferzeit 10-14 Tag (e)

5+	0.62 EUR
10+	0.44 EUR
100+	0.18 EUR
1000+	0.11 EUR
10000+	0.092 EUR
20000+	0.086 EUR

Mindestbestellmenge: 5

PMZ370UNEYL

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 560mA; Idm: 3.6A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.56A
Pulsed drain current: 3.6A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 860mΩ
Mounting: SMD
Gate charge: 1.16nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 10000 Stücke

Produkt ist nicht verfügbar

PMZ370UNEYL

Description: MOSFET N-CH 30V 900MA DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 490mOhm @ 500mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 1.05V @ 250µA
Supplier Device Package: SOT-883
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 78 pF @ 25 V

auf Bestellung 10000 Stücke:

Lieferzeit 10-14 Tag (e)

10000+	0.12 EUR

Mindestbestellmenge: 10000

PMZ370UNEYL

Trans MOSFET N-CH 30V 0.9A 3-Pin DFN T/R

Produkt ist nicht verfügbar

PMZ370UNEYL

Produkt ist nicht verfügbar

PMZ390UN

auf Bestellung 120000 Stücke:

Lieferzeit 21-28 Tag (e)

PMZ390UN

MOSFET

Produkt ist nicht verfügbar

PMZ390UN,315

Trans MOSFET N-CH 30V 1.78A 3-Pin DFN T/R

auf Bestellung 40000 Stücke:

Lieferzeit 14-21 Tag (e)

10000+	0.14 EUR

Mindestbestellmenge: 10000

PMZ390UN,315

Trans MOSFET N-CH 30V 1.78A 3-Pin DFN T/R

Produkt ist nicht verfügbar

PMZ390UN,315

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 600mA; Idm: 4A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.6A
Pulsed drain current: 4A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 0.79Ω
Mounting: SMD
Gate charge: 1.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate

Produkt ist nicht verfügbar

PMZ390UN,315

Description: MOSFET N-CH 30V 1.78A DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.78A (Tc)
Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-883
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.89 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 25 V

auf Bestellung 137093 Stücke:

Lieferzeit 10-14 Tag (e)

33+	0.55 EUR
46+	0.39 EUR
100+	0.2 EUR
500+	0.17 EUR
1000+	0.14 EUR
2000+	0.12 EUR

Mindestbestellmenge: 33

PMZ390UN,315

Trans MOSFET N-CH 30V 1.78A 3-Pin DFN T/R

auf Bestellung 40000 Stücke:

Lieferzeit 14-21 Tag (e)

10000+	0.14 EUR
20000+	0.12 EUR

Mindestbestellmenge: 10000

PMZ390UN,315

MOSFET PMZ390UN/SOT883/XQFN3

auf Bestellung 39762 Stücke:

Lieferzeit 10-14 Tag (e)

4+	0.75 EUR
10+	0.57 EUR
100+	0.35 EUR
1000+	0.19 EUR
2500+	0.17 EUR
10000+	0.14 EUR
20000+	0.13 EUR

Mindestbestellmenge: 4

PMZ390UN,315

Produkt ist nicht verfügbar

PMZ390UN,315

Description: MOSFET N-CH 30V 1.78A DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.78A (Tc)
Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-883
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.89 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 25 V

auf Bestellung 130000 Stücke:

Lieferzeit 10-14 Tag (e)

10000+	0.12 EUR

Mindestbestellmenge: 10000

PMZ390UN,315

Trans MOSFET N-CH 30V 1.78A 3-Pin DFN T/R

Produkt ist nicht verfügbar

PMZ390UNE

MOSFET

Produkt ist nicht verfügbar

PMZ390UNE/S500315

Description: SMALL SIGNAL N-CHANNEL MOSFET
Packaging: Bulk
Part Status: Active

Produkt ist nicht verfügbar

PMZ390UNEYL

Trans MOSFET N-CH 30V 0.9A 3-Pin DFN T/R

auf Bestellung 8000 Stücke:

Lieferzeit 14-21 Tag (e)

240+	0.65 EUR
404+	0.37 EUR
842+	0.17 EUR
1021+	0.14 EUR
2500+	0.12 EUR

Mindestbestellmenge: 240

PMZ390UNEYL

Description: MOSFET N-CH 30V 900MA DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 470mOhm @ 900mA, 4.5V
Power Dissipation (Max): 350mW (Ta), 5.43W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-883
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 15 V

auf Bestellung 23129 Stücke:

Lieferzeit 10-14 Tag (e)

24+	0.74 EUR
33+	0.54 EUR
100+	0.27 EUR
500+	0.24 EUR
1000+	0.19 EUR
2000+	0.17 EUR
5000+	0.16 EUR

Mindestbestellmenge: 24

PMZ390UNEYL

Trans MOSFET N-CH 30V 0.9A 3-Pin DFN T/R

auf Bestellung 20000 Stücke:

Lieferzeit 14-21 Tag (e)

10000+	0.13 EUR
20000+	0.1 EUR

Mindestbestellmenge: 10000

PMZ390UNEYL

Description: NEXPERIA - PMZ390UNEYL - Leistungs-MOSFET, n-Kanal, 30 V, 900 mA, 0.39 ohm, SOT-883, Oberflächenmontage
tariffCode: 85412100
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 900mA
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 700mV
euEccn: NLR
Verlustleistung: 350mW
Anzahl der Pins: 3Pin(s)
productTraceability: Yes-Date/Lot Code
Rds(on)-Prüfspannung: 4.5V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.39ohm

auf Bestellung 25110 Stücke:

Lieferzeit 14-21 Tag (e)

PMZ390UNEYL

Trans MOSFET N-CH 30V 0.9A 3-Pin DFN T/R

auf Bestellung 16055 Stücke:

Lieferzeit 14-21 Tag (e)

1415+	0.11 EUR
1471+	0.1 EUR
1489+	0.097 EUR
1539+	0.091 EUR
3000+	0.084 EUR
6000+	0.078 EUR
15000+	0.071 EUR

Mindestbestellmenge: 1415

PMZ390UNEYL

Description: MOSFET N-CH 30V 900MA DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 470mOhm @ 900mA, 4.5V
Power Dissipation (Max): 350mW (Ta), 5.43W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-883
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 15 V

auf Bestellung 10000 Stücke:

Lieferzeit 10-14 Tag (e)

10000+	0.14 EUR

Mindestbestellmenge: 10000

PMZ390UNEYL

Trans MOSFET N-CH 30V 0.9A 3-Pin DFN T/R

auf Bestellung 20000 Stücke:

Lieferzeit 14-21 Tag (e)

10000+	0.13 EUR
20000+	0.1 EUR

Mindestbestellmenge: 10000

PMZ390UNEYL

Trans MOSFET N-CH 30V 0.9A 3-Pin DFN T/R

auf Bestellung 16055 Stücke:

Lieferzeit 14-21 Tag (e)

412+	0.38 EUR
660+	0.23 EUR
763+	0.19 EUR
1415+	0.099 EUR
1471+	0.091 EUR
1489+	0.086 EUR
1539+	0.08 EUR
3000+	0.077 EUR
6000+	0.074 EUR

Mindestbestellmenge: 412

PMZ390UNEYL

MOSFET PMZ390UNE/SOT883/XQFN3

auf Bestellung 57131 Stücke:

Lieferzeit 10-14 Tag (e)

5+	0.64 EUR
10+	0.46 EUR
100+	0.22 EUR
1000+	0.15 EUR
2500+	0.14 EUR
10000+	0.12 EUR
20000+	0.11 EUR

Mindestbestellmenge: 5

PMZ390UNEYL

Trans MOSFET N-CH 30V 0.9A 3-Pin DFN T/R

auf Bestellung 8000 Stücke:

Lieferzeit 14-21 Tag (e)

842+	0.19 EUR
1021+	0.15 EUR
2500+	0.13 EUR

Mindestbestellmenge: 842

PMZ390UNEYL

Trans MOSFET N-CH 30V 0.9A 3-Pin DFN T/R

Produkt ist nicht verfügbar

PMZ390UNEYL

auf Bestellung 25110 Stücke:

Lieferzeit 14-21 Tag (e)

PMZ420UNYL

MOSFET Trench MOSFET

Produkt ist nicht verfügbar

PMZ420UNYL

Description: MOSFET N-CH
Packaging: Tape & Reel (TR)
Part Status: Active

Produkt ist nicht verfügbar

PMZ550UNE315

Description: SMALL SIGNAL N-CHANNEL MOSFET

auf Bestellung 6666 Stücke:

Lieferzeit 10-14 Tag (e)

PMZ550UNEYL

Description: NEXPERIA - PMZ550UNEYL - Leistungs-MOSFET, n-Kanal, 30 V, 590 mA, 0.55 ohm, SOT-883, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 590mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 700mV
euEccn: NLR
Verlustleistung: 310mW
Bauform - Transistor: SOT-883
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 4.5V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.55ohm
SVHC: No SVHC (14-Jun-2023)

auf Bestellung 45134 Stücke:

Lieferzeit 14-21 Tag (e)

PMZ550UNEYL

Trans MOSFET N-CH 30V 0.59A 3-Pin DFN T/R

auf Bestellung 10000 Stücke:

Lieferzeit 14-21 Tag (e)

10000+	0.097 EUR

Mindestbestellmenge: 10000

PMZ550UNEYL

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 370mA; Idm: 2.3A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.37A
Pulsed drain current: 2.3A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 1.17Ω
Mounting: SMD
Gate charge: 1.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 10000 Stücke

Produkt ist nicht verfügbar

PMZ550UNEYL

Trans MOSFET N-CH 30V 0.59A 3-Pin DFN T/R

auf Bestellung 10000 Stücke:

Lieferzeit 14-21 Tag (e)

10000+	0.097 EUR

Mindestbestellmenge: 10000

PMZ550UNEYL

Description: MOSFET N-CH 30V 590MA DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 590mA (Ta)
Rds On (Max) @ Id, Vgs: 670mOhm @ 590mA, 4.5V
Power Dissipation (Max): 310mW (Ta), 1.67W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-883
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 30.3 pF @ 15 V

auf Bestellung 40000 Stücke:

Lieferzeit 10-14 Tag (e)

10000+	0.1 EUR

Mindestbestellmenge: 10000

PMZ550UNEYL

Trans MOSFET N-CH 30V 0.59A 3-Pin DFN T/R

Produkt ist nicht verfügbar

PMZ550UNEYL

auf Bestellung 45134 Stücke:

Lieferzeit 14-21 Tag (e)

PMZ550UNEYL

Description: NEXPERIA - PMZ550UNEYL - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)

auf Bestellung 154000 Stücke:

Lieferzeit 14-21 Tag (e)

PMZ550UNEYL

Trans MOSFET N-CH 30V 0.59A 3-Pin DFN T/R

Produkt ist nicht verfügbar

PMZ550UNEYL

Description: MOSFET N-CH 30V 590MA DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 590mA (Ta)
Rds On (Max) @ Id, Vgs: 670mOhm @ 590mA, 4.5V
Power Dissipation (Max): 310mW (Ta), 1.67W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-883
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 30.3 pF @ 15 V

auf Bestellung 48542 Stücke:

Lieferzeit 10-14 Tag (e)

26+	0.69 EUR
37+	0.48 EUR
100+	0.24 EUR
500+	0.2 EUR
1000+	0.15 EUR
2000+	0.12 EUR

Mindestbestellmenge: 26

PMZ550UNEYL

Produkt ist nicht verfügbar

PMZ550UNEYL

MOSFET PMZ550UNE/SOT883/XQFN3

auf Bestellung 242247 Stücke:

Lieferzeit 10-14 Tag (e)

5+	0.69 EUR
10+	0.42 EUR
100+	0.19 EUR
1000+	0.12 EUR
2500+	0.11 EUR
10000+	0.1 EUR
20000+	0.088 EUR

Mindestbestellmenge: 5

PMZ600UNELYL

Description: MOSFET N-CH 20V 600MA DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V
Power Dissipation (Max): 2.7W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-883
Part Status: Active
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 21.3 pF @ 10 V

auf Bestellung 60000 Stücke:

Lieferzeit 10-14 Tag (e)

10000+	0.085 EUR
30000+	0.083 EUR
50000+	0.075 EUR

Mindestbestellmenge: 10000

PMZ600UNELYL

Trans MOSFET N-CH 20V 0.6A 3-Pin DFN T/R

auf Bestellung 10000 Stücke:

Lieferzeit 14-21 Tag (e)

PMZ600UNELYL

Trans MOSFET N-CH 20V 0.6A 3-Pin DFN T/R

auf Bestellung 10000 Stücke:

Lieferzeit 14-21 Tag (e)

10000+	0.077 EUR

Mindestbestellmenge: 10000

PMZ600UNELYL

Trans MOSFET N-CH 20V 0.6A 3-Pin DFN T/R

auf Bestellung 10000 Stücke:

Lieferzeit 14-21 Tag (e)

275+	0.57 EUR
336+	0.45 EUR
641+	0.23 EUR
983+	0.14 EUR
1541+	0.087 EUR
2000+	0.079 EUR
5000+	0.065 EUR
10000+	0.054 EUR

Mindestbestellmenge: 275

PMZ600UNELYL

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 400mA; Idm: 2.5A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.4A
Pulsed drain current: 2.5A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate

Produkt ist nicht verfügbar

PMZ600UNELYL

MOSFET PMZ600UNEL/SOT883/XQFN3

auf Bestellung 24850 Stücke:

Lieferzeit 10-14 Tag (e)

5+	0.59 EUR
10+	0.39 EUR
100+	0.18 EUR
1000+	0.1 EUR
2500+	0.086 EUR
10000+	0.074 EUR
20000+	0.07 EUR

Mindestbestellmenge: 5

PMZ600UNELYL

Trans MOSFET N-CH 20V 0.6A 3-Pin DFN T/R

auf Bestellung 10000 Stücke:

Lieferzeit 14-21 Tag (e)

10000+	0.086 EUR

Mindestbestellmenge: 10000

PMZ600UNELYL

Description: MOSFET N-CH 20V 600MA DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V
Power Dissipation (Max): 2.7W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-883
Part Status: Active
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 21.3 pF @ 10 V

auf Bestellung 76594 Stücke:

Lieferzeit 10-14 Tag (e)

28+	0.65 EUR
40+	0.45 EUR
100+	0.22 EUR
500+	0.18 EUR
1000+	0.13 EUR
2000+	0.11 EUR
5000+	0.1 EUR

Mindestbestellmenge: 28

PMZ600UNELYL

Trans MOSFET N-CH 20V 0.6A 3-Pin DFN T/R

auf Bestellung 10000 Stücke:

Lieferzeit 14-21 Tag (e)

641+	0.24 EUR
983+	0.15 EUR
1541+	0.094 EUR
2000+	0.086 EUR
5000+	0.071 EUR
10000+	0.057 EUR

Mindestbestellmenge: 641

PMZ600UNELYL

Produkt ist nicht verfügbar

PMZ600UNELYL

Trans MOSFET N-CH 20V 0.6A 3-Pin DFN T/R

Produkt ist nicht verfügbar

PMZ600UNEYL

Produkt ist nicht verfügbar

PMZ600UNEYL

MOSFET PMZ600UNE/SOT883/XQFN3

auf Bestellung 158938 Stücke:

Lieferzeit 10-14 Tag (e)

6+	0.51 EUR
10+	0.34 EUR
100+	0.15 EUR
1000+	0.09 EUR
2500+	0.079 EUR
10000+	0.065 EUR
20000+	0.058 EUR

Mindestbestellmenge: 6

PMZ600UNEYL

Description: MOSFET N-CH 20V 600MA DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-883
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 21.3 pF @ 10 V

auf Bestellung 10000 Stücke:

Lieferzeit 10-14 Tag (e)

10000+	0.072 EUR

Mindestbestellmenge: 10000

PMZ600UNEYL

Produkt ist nicht verfügbar

PMZ600UNEYL

Trans MOSFET N-CH 20V 0.6A 3-Pin DFN T/R

Produkt ist nicht verfügbar

PMZ600UNEYL

Description: MOSFET N-CH 20V 600MA DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-883
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 21.3 pF @ 10 V

auf Bestellung 24469 Stücke:

Lieferzeit 10-14 Tag (e)

32+	0.56 EUR
47+	0.38 EUR
100+	0.19 EUR
500+	0.16 EUR
1000+	0.11 EUR
2000+	0.094 EUR
5000+	0.087 EUR

Mindestbestellmenge: 32

PMZ600UNEZ

20 V, N-channel Trench MOSFET

Produkt ist nicht verfügbar

PMZ600UNEZ

Description: MOSFET N-CH 20V 600MA DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-883
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 21.3 pF @ 10 V

Produkt ist nicht verfügbar

PMZ600UNEZ

Produkt ist nicht verfügbar

PMZ600UNEZ

MOSFET PMZ600UNE/SOT883/XQFN3

auf Bestellung 11477 Stücke:

Lieferzeit 10-14 Tag (e)

6+	0.56 EUR
10+	0.32 EUR
100+	0.15 EUR
1000+	0.093 EUR
2500+	0.086 EUR
10000+	0.076 EUR
20000+	0.067 EUR

Mindestbestellmenge: 6

PMZ600UNEZ

Description: MOSFET N-CH 20V 600MA DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-883
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 21.3 pF @ 10 V

auf Bestellung 9230 Stücke:

Lieferzeit 10-14 Tag (e)

32+	0.56 EUR
47+	0.38 EUR
100+	0.19 EUR
500+	0.16 EUR
1000+	0.11 EUR
2000+	0.094 EUR
5000+	0.087 EUR

Mindestbestellmenge: 32

PMZ600UNEZ

Produkt ist nicht verfügbar

PMZ760SN

Produkt ist nicht verfügbar

PMZ760SN

auf Bestellung 120000 Stücke:

Lieferzeit 21-28 Tag (e)

PMZ760SN T/R

MOSFET MOSFET

Produkt ist nicht verfügbar

PMZ760SN,315

Description: MOSFET N-CH 60V 1.22A DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.22A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 300mA, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-883
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.05 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 30 V

Produkt ist nicht verfügbar

PMZ760SN,315

MOSFET MOSFET

Produkt ist nicht verfügbar

PMZ760SN,315

Description: MOSFET N-CH 60V 1.22A DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.22A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 300mA, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-883
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.05 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 30 V

Produkt ist nicht verfügbar

PMZ760SN,315

Trans MOSFET N-CH 60V 1.22A 3-Pin DFN T/R

Produkt ist nicht verfügbar

PMZ950UPE,315

Description: 0.5A, 20V, P CHANNEL, MOSFET, X

auf Bestellung 60000 Stücke:

Lieferzeit 10-14 Tag (e)

PMZ950UPE315

Description: P-CHANNEL MOSFET

auf Bestellung 899869 Stücke:

Lieferzeit 10-14 Tag (e)

PMZ950UPELYL

MOSFET PMZ950UPEL/SOT883/XQFN3

auf Bestellung 233526 Stücke:

Lieferzeit 10-14 Tag (e)

5+	0.61 EUR
10+	0.35 EUR
100+	0.19 EUR
1000+	0.13 EUR
2500+	0.11 EUR
10000+	0.084 EUR

Mindestbestellmenge: 5

PMZ950UPELYL

Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -300mA; Idm: -2A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -300mA
Pulsed drain current: -2A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 2.1Ω
Mounting: SMD
Gate charge: 2.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 10000 Stücke

Produkt ist nicht verfügbar

PMZ950UPELYL

Produkt ist nicht verfügbar

PMZ950UPELYL

Description: NEXPERIA - PMZ950UPELYL - Leistungs-MOSFET, p-Kanal, 20 V, 500 mA, 1.02 ohm, SOT-883, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 20V
rohsCompliant: YES
Dauer-Drainstrom Id: 500mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Verlustleistung Pd: 715mW
Gate-Source-Schwellenspannung, max.: 700mV
euEccn: NLR
Verlustleistung: 715mW
Bauform - Transistor: SOT-883
Anzahl der Pins: 3Pin(s)
Produktpalette: Trench
productTraceability: No
Wandlerpolarität: p-Kanal
Kanaltyp: p-Kanal
Betriebswiderstand, Rds(on): 1.02ohm
Rds(on)-Prüfspannung: 4.5V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 1.02ohm
SVHC: No SVHC (17-Jan-2023)

auf Bestellung 8330 Stücke:

Lieferzeit 14-21 Tag (e)

PMZ950UPELYL

Trans MOSFET P-CH 20V 0.5A 3-Pin DFN T/R

auf Bestellung 20000 Stücke:

Lieferzeit 14-21 Tag (e)

PMZ950UPELYL

Description: MOSFET P-CH 20V 500MA DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-883
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V

auf Bestellung 35986 Stücke:

Lieferzeit 10-14 Tag (e)

25+	0.72 EUR
36+	0.5 EUR
100+	0.25 EUR
500+	0.21 EUR
1000+	0.15 EUR
2000+	0.13 EUR
5000+	0.12 EUR

Mindestbestellmenge: 25

PMZ950UPELYL

Description: NEXPERIA - PMZ950UPELYL - Leistungs-MOSFET, p-Kanal, 20 V, 500 mA, 1.02 ohm, SOT-883, Oberflächenmontage
tariffCode: 85412100
productTraceability: No
rohsCompliant: YES
Verlustleistung: 715mW
Kanaltyp: p-Kanal
euEccn: NLR
hazardous: false
Drain-Source-Durchgangswiderstand: 1.02ohm
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
SVHC: No SVHC (17-Jan-2023)

auf Bestellung 8330 Stücke:

Lieferzeit 14-21 Tag (e)

PMZ950UPELYL

Description: MOSFET P-CH 20V 500MA DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-883
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V

auf Bestellung 20000 Stücke:

Lieferzeit 10-14 Tag (e)

10000+	0.11 EUR

Mindestbestellmenge: 10000

PMZ950UPEYL

Trans MOSFET P-CH 20V 0.5A 3-Pin DFN T/R

Produkt ist nicht verfügbar

PMZ950UPEYL

Description: MOSFET P-CH 20V 500MA DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-883
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V

Produkt ist nicht verfügbar

PMZ950UPEYL

Trans MOSFET P-CH 20V 0.5A 3-Pin DFN T/R

auf Bestellung 20000 Stücke:

Lieferzeit 14-21 Tag (e)

257+	0.61 EUR
351+	0.43 EUR
624+	0.23 EUR
951+	0.15 EUR
1435+	0.093 EUR
2000+	0.088 EUR
5000+	0.07 EUR
10000+	0.065 EUR

Mindestbestellmenge: 257

PMZ950UPEYL

Trans MOSFET P-CH 20V 0.5A 3-Pin DFN T/R

auf Bestellung 18908 Stücke:

Lieferzeit 14-21 Tag (e)

638+	0.25 EUR
646+	0.23 EUR
983+	0.15 EUR
1484+	0.094 EUR
3000+	0.089 EUR
6000+	0.076 EUR
15000+	0.063 EUR

Mindestbestellmenge: 638

PMZ950UPEYL

MOSFET Trench Mosfet 20V, P-channel

auf Bestellung 3400 Stücke:

Lieferzeit 10-14 Tag (e)

5+	0.69 EUR
10+	0.51 EUR
100+	0.32 EUR
500+	0.22 EUR

Mindestbestellmenge: 5

PMZ950UPEYL

Trans MOSFET P-CH 20V 0.5A 3-Pin DFN T/R

auf Bestellung 18908 Stücke:

Lieferzeit 14-21 Tag (e)

260+	0.6 EUR
355+	0.43 EUR
359+	0.41 EUR
638+	0.22 EUR
646+	0.21 EUR
983+	0.13 EUR
1484+	0.083 EUR
3000+	0.082 EUR
6000+	0.072 EUR

Mindestbestellmenge: 260

PMZ950UPEYL

Description: MOSFET P-CH 20V 500MA DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-883
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V

auf Bestellung 7275 Stücke:

Lieferzeit 10-14 Tag (e)

28+	0.63 EUR
40+	0.45 EUR
100+	0.23 EUR
500+	0.19 EUR
1000+	0.14 EUR
2000+	0.12 EUR
5000+	0.11 EUR

Mindestbestellmenge: 28

PMZ950UPEYL

Produkt ist nicht verfügbar

PMZ950UPEYL

Produkt ist nicht verfügbar

PMZ950UPEYL

Trans MOSFET P-CH 20V 0.5A 3-Pin DFN T/R

auf Bestellung 20000 Stücke:

Lieferzeit 14-21 Tag (e)

624+	0.25 EUR
951+	0.16 EUR
1435+	0.1 EUR
2000+	0.096 EUR
5000+	0.076 EUR
10000+	0.068 EUR

Mindestbestellmenge: 624

PMZB1200UPEYL

Trans MOSFET P-CH 30V 0.41A 3-Pin DFN-B T/R

Produkt ist nicht verfügbar

PMZB1200UPEYL

MOSFET PMZB1200UPE/SOT883B/XQFN3

auf Bestellung 18531 Stücke:

Lieferzeit 10-14 Tag (e)

5+	0.61 EUR
10+	0.42 EUR
100+	0.18 EUR
1000+	0.11 EUR
10000+	0.083 EUR
20000+	0.079 EUR

Mindestbestellmenge: 5

PMZB1200UPEYL

Description: MOSFET P-CH 30V 410MA DFN1006B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 410mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 410mA, 4.5V
Power Dissipation (Max): 310mW (Ta), 1.67W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1006B-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 43.2 pF @ 15 V

Produkt ist nicht verfügbar

PMZB1200UPEYL

Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -260mA; Idm: -1.7A
Drain-source voltage: -30V
Drain current: -260mA
On-state resistance: 2.4Ω
Gate charge: 1.2nC
Case: DFN1006B-3; SOT883B
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhanced
Technology: Trench
Pulsed drain current: -1.7A
Gate-source voltage: ±8V
Type of transistor: P-MOSFET

Produkt ist nicht verfügbar

PMZB1200UPEYL

Produkt ist nicht verfügbar

PMZB1200UPEYL

Trans MOSFET P-CH 30V 0.41A 3-Pin DFN-B T/R

auf Bestellung 10000 Stücke:

Lieferzeit 14-21 Tag (e)

10000+	0.073 EUR

Mindestbestellmenge: 10000

PMZB1200UPEYL

Trans MOSFET P-CH 30V 0.41A 3-Pin DFN-B T/R

auf Bestellung 10000 Stücke:

Lieferzeit 14-21 Tag (e)

10000+	0.068 EUR

Mindestbestellmenge: 10000

PMZB1200UPEYL

Description: MOSFET P-CH 30V 410MA DFN1006B-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 410mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 410mA, 4.5V
Power Dissipation (Max): 310mW (Ta), 1.67W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1006B-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 43.2 pF @ 15 V

auf Bestellung 17503 Stücke:

Lieferzeit 10-14 Tag (e)

29+	0.62 EUR
42+	0.43 EUR
100+	0.22 EUR
500+	0.18 EUR
1000+	0.13 EUR
2000+	0.11 EUR
5000+	0.1 EUR

Mindestbestellmenge: 29

PMZB150UNEYL

Description: MOSFET N-CH 20V 1.5A DFN1006B-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 350mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1006B-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 10 V

auf Bestellung 30170 Stücke:

Lieferzeit 10-14 Tag (e)

26+	0.69 EUR
36+	0.49 EUR
100+	0.25 EUR
500+	0.22 EUR
1000+	0.17 EUR
2000+	0.15 EUR

Mindestbestellmenge: 26

PMZB150UNEYL

Description: MOSFET N-CH 20V 1.5A DFN1006B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 350mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1006B-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 10 V

auf Bestellung 20000 Stücke:

Lieferzeit 10-14 Tag (e)

10000+	0.13 EUR

Mindestbestellmenge: 10000

PMZB150UNEYL

MOSFET PMZB150UNE/SOT883B/XQFN3

auf Bestellung 23565 Stücke:

Lieferzeit 10-14 Tag (e)

5+	0.69 EUR
10+	0.52 EUR
100+	0.22 EUR
1000+	0.15 EUR
10000+	0.13 EUR
20000+	0.12 EUR

Mindestbestellmenge: 5

PMZB150UNEYL

PMZB150UNEYL SMD N channel transistors

Produkt ist nicht verfügbar

PMZB200UNE

Produkt ist nicht verfügbar

PMZB200UNE315

Description: NXP - PMZB200UNE315 - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)

auf Bestellung 156850 Stücke:

Lieferzeit 14-21 Tag (e)

PMZB200UNE315

Description: SMALL SIGNAL N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Supplier Device Package: DFN1006B-3

auf Bestellung 156850 Stücke:

Lieferzeit 10-14 Tag (e)

4522+	0.12 EUR

Mindestbestellmenge: 4522

PMZB200UNEYL

Description: NEXPERIA - PMZB200UNEYL - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)

auf Bestellung 421580 Stücke:

Lieferzeit 14-21 Tag (e)

PMZB200UNEYL

MOSFET PMZB200UNE/SOT883B/XQFN3

auf Bestellung 37521 Stücke:

Lieferzeit 10-14 Tag (e)

5+	0.61 EUR
10+	0.41 EUR
100+	0.2 EUR
1000+	0.14 EUR
2500+	0.13 EUR
10000+	0.12 EUR
20000+	0.11 EUR

Mindestbestellmenge: 5

PMZB200UNEYL

Trans MOSFET N-CH 30V 1.4A 3-Pin DFN-B T/R

Produkt ist nicht verfügbar

PMZB200UNEYL

Trans MOSFET N-CH 30V 1.4A 3-Pin DFN-B T/R

Produkt ist nicht verfügbar

PMZB200UNEYL

Description: MOSFET N-CH 30V 1.4A DFN1006B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.4A, 4.5V
Power Dissipation (Max): 350mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1006B-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 89 pF @ 15 V

auf Bestellung 10000 Stücke:

Lieferzeit 10-14 Tag (e)

10000+	0.1 EUR

Mindestbestellmenge: 10000

PMZB200UNEYL

Trans MOSFET N-CH 30V 1.4A 3-Pin DFN-B T/R

auf Bestellung 8136 Stücke:

Lieferzeit 14-21 Tag (e)

362+	0.43 EUR

Mindestbestellmenge: 362

PMZB200UNEYL

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 900mA; Idm: 5A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.9A
Pulsed drain current: 5A
Case: DFN1006B-3; SOT883B
Gate-source voltage: ±8V
On-state resistance: 410mΩ
Mounting: SMD
Gate charge: 2.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke

Produkt ist nicht verfügbar

PMZB200UNEYL

Trans MOSFET N-CH 30V 1.4A 3-Pin DFN-B T/R

Produkt ist nicht verfügbar

PMZB200UNEYL

Trans MOSFET N-CH 30V 1.4A 3-Pin DFN-B T/R

auf Bestellung 8136 Stücke:

Lieferzeit 14-21 Tag (e)

362+	0.43 EUR
489+	0.31 EUR
493+	0.29 EUR
828+	0.17 EUR
829+	0.16 EUR
869+	0.15 EUR
1345+	0.091 EUR
3000+	0.09 EUR
6000+	0.084 EUR

Mindestbestellmenge: 362

PMZB200UNEYL

Description: MOSFET N-CH 30V 1.4A DFN1006B-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.4A, 4.5V
Power Dissipation (Max): 350mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1006B-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 89 pF @ 15 V

auf Bestellung 25920 Stücke:

Lieferzeit 10-14 Tag (e)

26+	0.69 EUR
37+	0.48 EUR
100+	0.24 EUR
500+	0.22 EUR
1000+	0.17 EUR
2000+	0.15 EUR

Mindestbestellmenge: 26

PMZB200UNEYL

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 900mA; Idm: 5A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.9A
Pulsed drain current: 5A
Case: DFN1006B-3; SOT883B
Gate-source voltage: ±8V
On-state resistance: 410mΩ
Mounting: SMD
Gate charge: 2.7nC
Kind of package: reel; tape
Kind of channel: enhanced

Produkt ist nicht verfügbar

PMZB200UNEYL

Trans MOSFET N-CH 30V 1.4A 3-Pin DFN-B T/R

Produkt ist nicht verfügbar

PMZB290UN

Produkt ist nicht verfügbar

PMZB290UN,315

Description: MOSFET N-CH 20V 1A DFN1006B-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 500mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1006B-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.68 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 83 pF @ 10 V

Produkt ist nicht verfügbar

PMZB290UN,315

MOSFET 20V Single N-channel Trench MOSFET

auf Bestellung 6039 Stücke:

Lieferzeit 10-14 Tag (e)

6+	0.56 EUR
10+	0.42 EUR
100+	0.24 EUR
500+	0.16 EUR

Mindestbestellmenge: 6

PMZB290UN,315

Description: MOSFET N-CH 20V 1A DFN1006B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 500mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1006B-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.68 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 83 pF @ 10 V

Produkt ist nicht verfügbar

PMZB290UN,315

Trans MOSFET N-CH 20V 1A 3-Pin DFN-B T/R

Produkt ist nicht verfügbar

PMZB290UN/FYL

Description: PMZB290UN/FYL
Packaging: Bulk
Part Status: Obsolete

Produkt ist nicht verfügbar

PMZB290UNE,315

Trans MOSFET N-CH 20V 1A 3-Pin DFN-B T/R

Produkt ist nicht verfügbar

PMZB290UNE,315

Description: MOSFET N-CH 20V 1A DFN1006B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 500mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1006B-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.68 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 83 pF @ 10 V

Produkt ist nicht verfügbar

PMZB290UNE,315

MOSFET N-Chan 20V 1A 715mW

auf Bestellung 7970 Stücke:

Lieferzeit 10-14 Tag (e)

PMZB290UNE,315

Description: MOSFET N-CH 20V 1A DFN1006B-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 500mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1006B-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.68 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 83 pF @ 10 V

Produkt ist nicht verfügbar

PMZB290UNE2315

Description: MOSFET N-CH 20V 1A
Packaging: Bulk

Produkt ist nicht verfügbar

PMZB290UNE2YL

Trans MOSFET N-CH 20V 1.2A 3-Pin DFN-B T/R

auf Bestellung 770000 Stücke:

Lieferzeit 14-21 Tag (e)

30000+	0.058 EUR
50000+	0.056 EUR
100000+	0.052 EUR
250000+	0.049 EUR

Mindestbestellmenge: 30000

PMZB290UNE2YL

Description: MOSFET N-CH 20V 1.2A DFN1006B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 320mOhm @ 1.2A, 4.5V
Power Dissipation (Max): 350mW (Ta), 5.43W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1006B-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 10 V

auf Bestellung 20000 Stücke:

Lieferzeit 10-14 Tag (e)

10000+	0.084 EUR

Mindestbestellmenge: 10000

PMZB290UNE2YL

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 0.8A; Idm: 4A; 350mW
Technology: Trench
Mounting: SMD
Power dissipation: 0.35W
Case: DFN1006B-3; SOT883B
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 1.4nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 4A
Drain-source voltage: 20V
Drain current: 0.8A
On-state resistance: 1.19Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 5 Stücke

auf Bestellung 7290 Stücke:

Lieferzeit 7-14 Tag (e)

675+	0.11 EUR
855+	0.084 EUR
1080+	0.066 EUR
1140+	0.063 EUR
5000+	0.062 EUR

Mindestbestellmenge: 675

PMZB290UNE2YL

Trans MOSFET N-CH 20V 1.2A 3-Pin DFN-B T/R

auf Bestellung 28568 Stücke:

Lieferzeit 14-21 Tag (e)

425+	0.37 EUR
558+	0.27 EUR
567+	0.26 EUR
808+	0.17 EUR
850+	0.16 EUR
1120+	0.11 EUR
1616+	0.076 EUR
3000+	0.074 EUR
6000+	0.051 EUR

Mindestbestellmenge: 425

PMZB290UNE2YL

Trans MOSFET N-CH 20V 1.2A 3-Pin DFN-B T/R

auf Bestellung 28568 Stücke:

Lieferzeit 14-21 Tag (e)

806+	0.19 EUR
848+	0.18 EUR
1114+	0.13 EUR
1593+	0.088 EUR
3000+	0.08 EUR
6000+	0.071 EUR
15000+	0.053 EUR

Mindestbestellmenge: 806

PMZB290UNE2YL

MOSFET PMZB290UNE2/SOT883B/XQFN3

auf Bestellung 143656 Stücke:

Lieferzeit 10-14 Tag (e)

6+	0.51 EUR
10+	0.35 EUR
100+	0.16 EUR
1000+	0.1 EUR
2500+	0.088 EUR
10000+	0.07 EUR
20000+	0.065 EUR

Mindestbestellmenge: 6

PMZB290UNE2YL

Trans MOSFET N-CH 20V 1.2A 3-Pin DFN-B T/R

auf Bestellung 30000 Stücke:

Lieferzeit 14-21 Tag (e)

10000+	0.061 EUR
30000+	0.056 EUR

Mindestbestellmenge: 10000

PMZB290UNE2YL

auf Bestellung 7290 Stücke:

Lieferzeit 14-21 Tag (e)

675+	0.11 EUR
855+	0.084 EUR
1080+	0.066 EUR
1140+	0.063 EUR
5000+	0.062 EUR

Mindestbestellmenge: 675

PMZB290UNE2YL

Description: NEXPERIA - PMZB290UNE2YL - Leistungs-MOSFET, n-Kanal, 20 V, 1.2 A, 0.27 ohm, SOT-883B, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 20V
rohsCompliant: YES
Dauer-Drainstrom Id: 1.2A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Verlustleistung Pd: 350mW
Gate-Source-Schwellenspannung, max.: 700mV
euEccn: NLR
Verlustleistung: 350mW
Bauform - Transistor: SOT-883B
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.27ohm
Rds(on)-Prüfspannung: 4.5V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.27ohm
SVHC: No SVHC (17-Jan-2023)

auf Bestellung 7707 Stücke:

Lieferzeit 14-21 Tag (e)

PMZB290UNE2YL

Trans MOSFET N-CH 20V 1.2A 3-Pin DFN-B T/R

Produkt ist nicht verfügbar

PMZB290UNE2YL

Description: MOSFET N-CH 20V 1.2A DFN1006B-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 320mOhm @ 1.2A, 4.5V
Power Dissipation (Max): 350mW (Ta), 5.43W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1006B-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 10 V

auf Bestellung 31101 Stücke:

Lieferzeit 10-14 Tag (e)

28+	0.65 EUR
40+	0.45 EUR
100+	0.22 EUR
500+	0.18 EUR
1000+	0.13 EUR
2000+	0.11 EUR
5000+	0.1 EUR

Mindestbestellmenge: 28

PMZB290UNE2YL

Trans MOSFET N-CH 20V 1.2A 3-Pin DFN-B T/R

auf Bestellung 30000 Stücke:

Lieferzeit 14-21 Tag (e)

10000+	0.072 EUR

Mindestbestellmenge: 10000

PMZB290UNE2YL

Trans MOSFET N-CH 20V 1.2A 3-Pin DFN-B T/R

auf Bestellung 30000 Stücke:

Lieferzeit 14-21 Tag (e)

PMZB290UNE2YL

Trans MOSFET N-CH 20V 1.2A 3-Pin DFN-B T/R

auf Bestellung 770000 Stücke:

Lieferzeit 14-21 Tag (e)

30000+	0.06 EUR
40000+	0.056 EUR
50000+	0.054 EUR
150000+	0.049 EUR

Mindestbestellmenge: 30000

PMZB300XN,315

Description: MOSFET N-CH 20V 1A 3DFN

Produkt ist nicht verfügbar

PMZB300XN,315

Description: MOSFET N-CH 20V 1A 3DFN

Produkt ist nicht verfügbar

PMZB320UPEYL

MOSFET PMZB320UPE/SOT883B/XQFN3

auf Bestellung 39246 Stücke:

Lieferzeit 10-14 Tag (e)

4+	0.78 EUR
10+	0.44 EUR
100+	0.21 EUR
1000+	0.14 EUR
2500+	0.13 EUR
10000+	0.12 EUR
20000+	0.1 EUR

Mindestbestellmenge: 4

PMZB320UPEYL

Description: MOSFET P-CH 30V 1A DFN1006B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 510mOhm @ 1A, 4.5V
Power Dissipation (Max): 350mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1006B-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 122 pF @ 15 V

auf Bestellung 40000 Stücke:

Lieferzeit 10-14 Tag (e)

10000+	0.12 EUR
30000+	0.11 EUR

Mindestbestellmenge: 10000

PMZB320UPEYL

Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -600mA; Idm: -4A
Mounting: SMD
Drain current: -0.6A
On-state resistance: 810mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.4nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -4A
Case: DFN1006B-3; SOT883B
Drain-source voltage: -30V

Produkt ist nicht verfügbar

PMZB320UPEYL

Trans MOSFET P-CH 30V 1A 3-Pin DFN-B T/R

auf Bestellung 10000 Stücke:

Lieferzeit 14-21 Tag (e)

PMZB320UPEYL

Description: MOSFET P-CH 30V 1A DFN1006B-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 510mOhm @ 1A, 4.5V
Power Dissipation (Max): 350mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1006B-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 122 pF @ 15 V

auf Bestellung 64582 Stücke:

Lieferzeit 10-14 Tag (e)

23+	0.79 EUR
32+	0.55 EUR
100+	0.28 EUR
500+	0.23 EUR
1000+	0.17 EUR
2000+	0.14 EUR

Mindestbestellmenge: 23

PMZB320UPEYL

Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -600mA; Idm: -4A
Mounting: SMD
Drain current: -0.6A
On-state resistance: 810mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.4nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -4A
Case: DFN1006B-3; SOT883B
Drain-source voltage: -30V
Anzahl je Verpackung: 10000 Stücke

Produkt ist nicht verfügbar

PMZB320UPEYL

Trans MOSFET P-CH 30V 1A 3-Pin DFN-B T/R

Produkt ist nicht verfügbar

PMZB350UPE,315

Description: MOSFET P-CH 20V 1A DFN1006B-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 300mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 3.125W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1006B-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 127 pF @ 10 V

auf Bestellung 15375 Stücke:

Lieferzeit 10-14 Tag (e)

23+	0.77 EUR
33+	0.54 EUR
100+	0.27 EUR
500+	0.22 EUR
1000+	0.16 EUR
2000+	0.14 EUR
5000+	0.13 EUR

Mindestbestellmenge: 23

PMZB350UPE,315

PMZB350UPE.315 SMD P channel transistors

Produkt ist nicht verfügbar

PMZB350UPE,315

MOSFET PMZB350UPE/SOT883B/XQFN3

auf Bestellung 13521 Stücke:

Lieferzeit 10-14 Tag (e)

5+	0.59 EUR
10+	0.4 EUR
100+	0.16 EUR
1000+	0.12 EUR
2500+	0.11 EUR
10000+	0.1 EUR
20000+	0.092 EUR

Mindestbestellmenge: 5

PMZB350UPE,315

Description: MOSFET P-CH 20V 1A DFN1006B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 300mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 3.125W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1006B-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 127 pF @ 10 V

auf Bestellung 10000 Stücke:

Lieferzeit 10-14 Tag (e)

10000+	0.11 EUR

Mindestbestellmenge: 10000

PMZB350UPE,315

Trans MOSFET P-CH 20V 1A 3-Pin DFN-B T/R

Produkt ist nicht verfügbar

PMZB370UNE,315

MOSFET N-Chan 30V 900mA

Produkt ist nicht verfügbar

PMZB370UNE,315

Description: NXP - PMZB370UNE,315 - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)

auf Bestellung 570000 Stücke:

Lieferzeit 14-21 Tag (e)

PMZB370UNE,315

Description: MOSFET N-CH 30V 900MA DFN1006B-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 490mOhm @ 500mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 1.05V @ 250µA
Supplier Device Package: DFN1006B-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.16 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 78 pF @ 25 V

Produkt ist nicht verfügbar

PMZB370UNE,315

Description: MOSFET N-CH 30V 900MA DFN1006B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 490mOhm @ 500mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 1.05V @ 250µA
Supplier Device Package: DFN1006B-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.16 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 78 pF @ 25 V

Produkt ist nicht verfügbar

PMZB370UNE,315-NEX

Description: EFFECT TRANSISTOR, 0.9A I(D), 30

Produkt ist nicht verfügbar

PMZB380XN,315

Description: MOSFET N-CH 30V 930MA DFN1006B-3
Packaging: Bulk
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 930mA (Ta)
Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: DFN1006B-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.87 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 25 V

auf Bestellung 243343 Stücke:

Lieferzeit 10-14 Tag (e)

2959+	0.16 EUR

Mindestbestellmenge: 2959

PMZB390UNE

Produkt ist nicht verfügbar

PMZB390UNEYL

Description: NEXPERIA - PMZB390UNEYL - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)

auf Bestellung 10000 Stücke:

Lieferzeit 14-21 Tag (e)

PMZB390UNEYL

Description: MOSFET N-CH 30V 900MA DFN1006B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 470mOhm @ 900mA, 4.5V
Power Dissipation (Max): 350mW (Ta), 5.43W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1006B-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 15 V

auf Bestellung 10000 Stücke:

Lieferzeit 10-14 Tag (e)

10000+	0.12 EUR

Mindestbestellmenge: 10000

PMZB390UNEYL

MOSFET PMZB390UNE/SOT883B/XQFN3

auf Bestellung 15061 Stücke:

Lieferzeit 10-14 Tag (e)

5+	0.62 EUR
10+	0.4 EUR
100+	0.2 EUR
1000+	0.14 EUR
2500+	0.13 EUR
10000+	0.12 EUR
20000+	0.11 EUR

Mindestbestellmenge: 5

PMZB390UNEYL

Description: NEXPERIA - PMZB390UNEYL - Leistungs-MOSFET, n-Kanal, 30 V, 900 mA, 0.39 ohm, SOT-883B, Oberflächenmontage
tariffCode: 85412100
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 900mA
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 700mV
euEccn: NLR
Verlustleistung: 350mW
Anzahl der Pins: 3Pin(s)
productTraceability: Yes-Date/Lot Code
Rds(on)-Prüfspannung: 4.5V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.39ohm

auf Bestellung 3205 Stücke:

Lieferzeit 14-21 Tag (e)

PMZB390UNEYL

Trans MOSFET N-CH 30V 0.9A 3-Pin DFN-B T/R

Produkt ist nicht verfügbar

PMZB390UNEYL

Trans MOSFET N-CH 30V 0.9A 3-Pin DFN-B T/R

Produkt ist nicht verfügbar

PMZB390UNEYL

Description: NEXPERIA - PMZB390UNEYL - Leistungs-MOSFET, n-Kanal, 30 V, 900 mA, 0.39 ohm, SOT-883B, Oberflächenmontage
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99

auf Bestellung 10000 Stücke:

Lieferzeit 14-21 Tag (e)

PMZB390UNEYL

Description: MOSFET N-CH 30V 900MA DFN1006B-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 470mOhm @ 900mA, 4.5V
Power Dissipation (Max): 350mW (Ta), 5.43W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1006B-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 15 V

auf Bestellung 29228 Stücke:

Lieferzeit 10-14 Tag (e)

29+	0.62 EUR
41+	0.44 EUR
100+	0.22 EUR
500+	0.2 EUR
1000+	0.15 EUR
2000+	0.14 EUR
5000+	0.13 EUR

Mindestbestellmenge: 29

PMZB390UNEYL

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 600mA; Idm: 4A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.6A
Pulsed drain current: 4A
Case: DFN1006B-3; SOT883B
Gate-source voltage: ±8V
On-state resistance: 0.79Ω
Mounting: SMD
Gate charge: 1.3nC
Kind of package: reel; tape
Kind of channel: enhanced

Produkt ist nicht verfügbar

PMZB390UNEYL

auf Bestellung 3205 Stücke:

Lieferzeit 14-21 Tag (e)

PMZB390UNEYL

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 600mA; Idm: 4A
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.6A
Pulsed drain current: 4A
Case: DFN1006B-3; SOT883B
Gate-source voltage: ±8V
On-state resistance: 0.79Ω
Mounting: SMD
Gate charge: 1.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke

Produkt ist nicht verfügbar

PMZB420UN,315

Trans MOSFET N-CH 30V 0.9A 3-Pin DFN-B T/R

Produkt ist nicht verfügbar

PMZB420UN,315

Description: MOSFET N-CH 30V SGL 3DFN

Produkt ist nicht verfügbar

PMZB420UN,315

Description: MOSFET N-CH 30V 900MA DFN1006B-3

Produkt ist nicht verfügbar

PMZB550UNE/S500YL

Description: NEXPERIA - PMZB550UNE/S500YL - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (23-Jan-2024)

auf Bestellung 7400 Stücke:

Lieferzeit 14-21 Tag (e)

PMZB550UNE315

Description: NOW NEXPERIA PMZB550UNE SMALL SI

auf Bestellung 338000 Stücke:

Lieferzeit 10-14 Tag (e)

6231+	0.08 EUR

Mindestbestellmenge: 6231

PMZB550UNEYL

Description: MOSFET N-CH 30V 590MA DFN1006B-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 590mA (Ta)
Rds On (Max) @ Id, Vgs: 670mOhm @ 590mA, 4.5V
Power Dissipation (Max): 310mW (Ta), 1.67W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1006B-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 30.3 pF @ 15 V

auf Bestellung 18639 Stücke:

Lieferzeit 10-14 Tag (e)

25+	0.7 EUR
36+	0.5 EUR
100+	0.25 EUR
500+	0.21 EUR
1000+	0.15 EUR
2000+	0.13 EUR
5000+	0.12 EUR

Mindestbestellmenge: 25

PMZB550UNEYL

PMZB550UNEYL SMD N channel transistors

Produkt ist nicht verfügbar

PMZB550UNEYL

Description: MOSFET N-CH 30V 590MA DFN1006B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 590mA (Ta)
Rds On (Max) @ Id, Vgs: 670mOhm @ 590mA, 4.5V
Power Dissipation (Max): 310mW (Ta), 1.67W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1006B-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 30.3 pF @ 15 V

auf Bestellung 10000 Stücke:

Lieferzeit 10-14 Tag (e)

10000+	0.11 EUR

Mindestbestellmenge: 10000

PMZB550UNEYL

MOSFET PMZB550UNE/SOT883B/XQFN3

auf Bestellung 16305 Stücke:

Lieferzeit 10-14 Tag (e)

4+	0.84 EUR
10+	0.63 EUR
100+	0.36 EUR
500+	0.24 EUR
1000+	0.18 EUR
2500+	0.16 EUR
10000+	0.12 EUR

Mindestbestellmenge: 4

PMZB600UNE315

Description: SMALL SIGNAL N-CHANNEL MOSFET

auf Bestellung 599486 Stücke:

Lieferzeit 10-14 Tag (e)

PMZB600UNEL315

Description: NEXPERIA PMZB600UNE - SMALL SIGN
Packaging: Bulk
Part Status: Active

auf Bestellung 150000 Stücke:

Lieferzeit 10-14 Tag (e)

8410+	0.07 EUR

Mindestbestellmenge: 8410

PMZB600UNELYL

N-channel Trench MOSFET

Produkt ist nicht verfügbar

PMZB600UNELYL

Description: MOSFET N-CH 20V 600MA DFN1006B-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1006B-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 21.3 pF @ 10 V

auf Bestellung 300279 Stücke:

Lieferzeit 10-14 Tag (e)

33+	0.55 EUR
47+	0.38 EUR
100+	0.19 EUR
500+	0.16 EUR
1000+	0.12 EUR
2000+	0.098 EUR
5000+	0.093 EUR

Mindestbestellmenge: 33

PMZB600UNELYL

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 400mA; Idm: 2.5A
Pulsed drain current: 2.5A
Gate charge: 0.7nC
Polarisation: unipolar
Technology: Trench
Drain current: 0.4A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: DFN1006B-3; SOT883B
On-state resistance: 1Ω
Mounting: SMD
Anzahl je Verpackung: 10000 Stücke

Produkt ist nicht verfügbar

PMZB600UNELYL

Produkt ist nicht verfügbar

PMZB600UNELYL

Description: MOSFET N-CH 20V 600MA DFN1006B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1006B-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 21.3 pF @ 10 V

auf Bestellung 280000 Stücke:

Lieferzeit 10-14 Tag (e)

10000+	0.081 EUR
30000+	0.079 EUR
50000+	0.066 EUR
250000+	0.065 EUR

Mindestbestellmenge: 10000

PMZB600UNELYL

MOSFET PMZB600UNEL/SOT883B/XQFN3

auf Bestellung 7200 Stücke:

Lieferzeit 10-14 Tag (e)

6+	0.54 EUR
10+	0.37 EUR
100+	0.15 EUR
1000+	0.099 EUR
2500+	0.093 EUR
10000+	0.081 EUR
20000+	0.079 EUR

Mindestbestellmenge: 6

PMZB600UNELYL

N-channel Trench MOSFET

Produkt ist nicht verfügbar

PMZB600UNEYL

MOSFET PMZB600UNE/SOT883B/XQFN3

auf Bestellung 13059 Stücke:

Lieferzeit 10-14 Tag (e)

5+	0.59 EUR
10+	0.4 EUR
100+	0.17 EUR
1000+	0.11 EUR
2500+	0.092 EUR
10000+	0.069 EUR
20000+	0.067 EUR

Mindestbestellmenge: 5

PMZB600UNEYL

Description: MOSFET N-CH 20V 600MA DFN1006B-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1006B-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 21.3 pF @ 10 V

auf Bestellung 32745 Stücke:

Lieferzeit 10-14 Tag (e)

29+	0.62 EUR
42+	0.42 EUR
100+	0.21 EUR
500+	0.17 EUR
1000+	0.12 EUR
2000+	0.1 EUR
5000+	0.096 EUR

Mindestbestellmenge: 29

PMZB600UNEYL

Description: MOSFET N-CH 20V 600MA DFN1006B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1006B-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 21.3 pF @ 10 V

auf Bestellung 20000 Stücke:

Lieferzeit 10-14 Tag (e)

10000+	0.079 EUR

Mindestbestellmenge: 10000

PMZB670UPE,315

Trans MOSFET P-CH 20V 0.68A 3-Pin DFN-B T/R

auf Bestellung 10000 Stücke:

Lieferzeit 14-21 Tag (e)

PMZB670UPE,315

Description: MOSFET P-CH 20V 680MA DFN1006B-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 680mA (Ta)
Rds On (Max) @ Id, Vgs: 850mOhm @ 400mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: DFN1006B-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 87 pF @ 10 V

auf Bestellung 27710 Stücke:

Lieferzeit 10-14 Tag (e)

25+	0.72 EUR
35+	0.51 EUR
100+	0.26 EUR
500+	0.21 EUR
1000+	0.16 EUR
2000+	0.13 EUR
5000+	0.12 EUR

Mindestbestellmenge: 25

PMZB670UPE,315

PMZB670UPE.315 SMD P channel transistors

Produkt ist nicht verfügbar

PMZB670UPE,315

MOSFET PMZB670UPE/SOT883B/XQFN3

auf Bestellung 8809 Stücke:

Lieferzeit 10-14 Tag (e)

4+	0.78 EUR
10+	0.58 EUR
100+	0.33 EUR
500+	0.22 EUR
1000+	0.15 EUR
5000+	0.13 EUR
10000+	0.11 EUR

Mindestbestellmenge: 4

PMZB670UPE,315

Description: NEXPERIA - PMZB670UPE,315 - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)

auf Bestellung 1934000 Stücke:

Lieferzeit 14-21 Tag (e)

PMZB670UPE,315

Description: MOSFET P-CH 20V 680MA DFN1006B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 680mA (Ta)
Rds On (Max) @ Id, Vgs: 850mOhm @ 400mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: DFN1006B-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 87 pF @ 10 V

auf Bestellung 20000 Stücke:

Lieferzeit 10-14 Tag (e)

10000+	0.11 EUR

Mindestbestellmenge: 10000

PMZB790SN,315

Description: MOSFET N-CH 60V 650MA DFN1006B-3

Produkt ist nicht verfügbar

PMZB790SN,315

Description: MOSFET N-CH 60V 650MA DFN1006B-3

Produkt ist nicht verfügbar

PMZB790SN,315

Trans MOSFET N-CH 60V 0.65A 3-Pin DFN-B T/R

Produkt ist nicht verfügbar

PMZB950UPE315

Description: P-CHANNEL MOSFET

auf Bestellung 490000 Stücke:

Lieferzeit 10-14 Tag (e)

PMZB950UPEL315

Description: NEXPERIA PMZB950UPEL - 20 V, P-C
Packaging: Bulk
Part Status: Active

auf Bestellung 54000 Stücke:

Lieferzeit 10-14 Tag (e)

6086+	0.088 EUR

Mindestbestellmenge: 6086

PMZB950UPELYL

Description: MOSFET P-CH 20V 500MA DFN1006B-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1006B-3
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V

auf Bestellung 34560 Stücke:

Lieferzeit 10-14 Tag (e)

29+	0.62 EUR
41+	0.43 EUR
100+	0.22 EUR
500+	0.19 EUR
1000+	0.15 EUR
2000+	0.13 EUR

Mindestbestellmenge: 29

PMZB950UPELYL

MOSFET PMZB950UPEL/SOT883B/XQFN3

auf Bestellung 9467 Stücke:

Lieferzeit 10-14 Tag (e)

5+	0.61 EUR
10+	0.43 EUR
100+	0.19 EUR
1000+	0.13 EUR
2500+	0.12 EUR
10000+	0.097 EUR

Mindestbestellmenge: 5

PMZB950UPELYL

Description: NEXPERIA - PMZB950UPELYL - Leistungs-MOSFET, p-Kanal, 20 V, 500 mA, 1.02 ohm, SOT-883B, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 20V
rohsCompliant: YES
Dauer-Drainstrom Id: 500mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 700mV
euEccn: NLR
Verlustleistung: 360mW
Bauform - Transistor: SOT-883B
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 4.5V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 1.02ohm

auf Bestellung 9604 Stücke:

Lieferzeit 14-21 Tag (e)

PMZB950UPELYL

Description: MOSFET P-CH 20V 500MA DFN1006B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1006B-3
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V

auf Bestellung 10000 Stücke:

Lieferzeit 10-14 Tag (e)

10000+	0.12 EUR

Mindestbestellmenge: 10000

PMZB950UPELYL

P-channel Trench MOSFET

Produkt ist nicht verfügbar

PMZB950UPELYL

Description: NEXPERIA - PMZB950UPELYL - Leistungs-MOSFET, p-Kanal, 20 V, 500 mA, 1.02 ohm, SOT-883B, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 20V
rohsCompliant: YES
Dauer-Drainstrom Id: 500mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 700mV
euEccn: NLR
Verlustleistung: 360mW
Bauform - Transistor: SOT-883B
Anzahl der Pins: 3Pins
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 4.5V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 1.02ohm

auf Bestellung 9704 Stücke:

Lieferzeit 14-21 Tag (e)

PMZB950UPEYL

Trans MOSFET P-CH 20V 0.5A 3-Pin DFN-B T/R

Produkt ist nicht verfügbar

PMZB950UPEYL

Description: MOSFET P-CH 20V 500MA DFN1006B-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1006B-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V

auf Bestellung 9490 Stücke:

Lieferzeit 10-14 Tag (e)

24+	0.74 EUR
35+	0.51 EUR
100+	0.26 EUR
500+	0.21 EUR
1000+	0.16 EUR
2000+	0.13 EUR
5000+	0.12 EUR

Mindestbestellmenge: 24

PMZB950UPEYL

PMZB950UPEYL SMD P channel transistors

Produkt ist nicht verfügbar

PMZB950UPEYL

Description: MOSFET P-CH 20V 500MA DFN1006B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1006B-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V

Produkt ist nicht verfügbar

PMZB950UPEYL