Produkte > ALLIANCE MEMORY > Alle Produkte des Herstellers ALLIANCE MEMORY (3606) > Seite 28 nach 61
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
AS6C1008-55TINL | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.7÷5.5V; 55ns; TSOP32 Mounting: SMD Case: TSOP32 Operating voltage: 2.7...5.5V Integrated circuit features: LPC Kind of interface: parallel Memory: 1Mb SRAM Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory organisation: 128kx8bit Access time: 55ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C1008-55TINLTR | Alliance Memory | SRAM 1Mb, 2.7V-5.5V, 55ns 128K x 8 Asynch SRAM |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C1008-55TINLTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.7÷5.5V; 55ns; TSOP32 Mounting: SMD Case: TSOP32 Operating voltage: 2.7...5.5V Integrated circuit features: LPC Kind of interface: parallel Memory: 1Mb SRAM Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory organisation: 128kx8bit Access time: 55ns Anzahl je Verpackung: 1500 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C1008-55TINTR | Alliance Memory | SRAM 1Mb, 2.7V-5.5V, 55ns 128K x 8 Asynch SRAM |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C1008-55TINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.7÷5.5V; 55ns; TSOP32 Mounting: SMD Case: TSOP32 Operating voltage: 2.7...5.5V Integrated circuit features: LPC Kind of interface: parallel Memory: 1Mb SRAM Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory organisation: 128kx8bit Access time: 55ns Anzahl je Verpackung: 1500 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C1016-55BIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.7÷5.5V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 1Mb SRAM Memory organisation: 64kx16bit Access time: 55ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...5.5V |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C1016-55BINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.7÷5.5V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 1Mb SRAM Memory organisation: 64kx16bit Access time: 55ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...5.5V |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C1016-55ZINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.7÷5.5V; 55ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 1Mb SRAM Memory organisation: 64kx16bit Access time: 55ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC IC width: 400mils Operating voltage: 2.7...5.5V |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C1016-55BIN | Alliance Memory | SRAM 1Mb, 2.7V-5.5V, 55ns 64K x 8 Asynch SRAM |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C1016-55BIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.7÷5.5V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 1Mb SRAM Memory organisation: 64kx16bit Access time: 55ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...5.5V Anzahl je Verpackung: 480 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C1016-55BINTR | Alliance Memory | SRAM 1Mb, 2.7V-5.5V, 55ns 64K x 16 |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C1016-55BINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.7÷5.5V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 1Mb SRAM Memory organisation: 64kx16bit Access time: 55ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...5.5V Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C1016-55ZIN | Alliance Memory | SRAM LP SRAM, 1Mb, 64K x 16, 2.7 - 5.5V, 44pin TSOP II, 55ns, Industrial Temp - Tray |
auf Bestellung 134 Stücke: Lieferzeit 14-28 Tag (e) |
|
|||||||||||||||
AS6C1016-55ZINTR | Alliance Memory | SRAM 1Mb, 2.7V-5.5V, 55ns 128K x 8 Asynch SRAM |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C1016-55ZINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.7÷5.5V; 55ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 1Mb SRAM Memory organisation: 64kx16bit Access time: 55ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC IC width: 400mils Operating voltage: 2.7...5.5V Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C1608-55BIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 2.7÷3.6V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 16Mb SRAM Memory organisation: 2Mx8bit Access time: 55ns Case: TFBGA48 Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...3.6V |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C1608-55BINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 2.7÷3.6V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 16Mb SRAM Memory organisation: 2Mx8bit Access time: 55ns Case: TFBGA48 Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...3.6V |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C1608-55BIN | Alliance Memory | SRAM 16M 3V 55ns 2048Kx8 LP Asyn SRAM |
auf Bestellung 13 Stücke: Lieferzeit 14-28 Tag (e) |
||||||||||||||||
AS6C1608-55BIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 2.7÷3.6V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 16Mb SRAM Memory organisation: 2Mx8bit Access time: 55ns Case: TFBGA48 Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...3.6V Anzahl je Verpackung: 135 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C1608-55BINTR | Alliance Memory | SRAM 16M 3V 55ns 2048Kx8 LP Asyn SRAM |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C1608-55BINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 2.7÷3.6V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 16Mb SRAM Memory organisation: 2Mx8bit Access time: 55ns Case: TFBGA48 Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...3.6V Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C1608-55TIN | Alliance Memory | SRAM 16M 3V 55ns 2048Kx8 LP Asyn SRAM |
auf Bestellung 86 Stücke: Lieferzeit 14-28 Tag (e) |
||||||||||||||||
AS6C1608-55TINTR | Alliance Memory | SRAM 16M 3V 55ns 2048Kx8 LP Asyn SRAM |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C1608B-45BIN | Alliance Memory | SRAM LP SRAM, 16Mb, 2048k x 8, 2.7 - 3.6V, 48ball TFBGA, Industrial Temp - Tray |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C1608B-45BINTR | Alliance Memory | DRAM |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C1608B-45TIN | Alliance Memory | SRAM LP SRAM, 16Mb, 2048k x 8, 2.7 - 3.6V, 44pin TSOP II, Industrial Temp - Tray |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C1608B-55TIN | ALLIANCE MEMORY | AS6C1608B-55TIN Parallel SRAM memories - integ. circ. |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C1608B-55TINTR | ALLIANCE MEMORY | AS6C1608B-55TINTR Parallel SRAM memories - integ. circ. |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C1616-55BIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 55ns Case: TFBGA48 Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...3.6V |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C1616-55BINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 55ns Case: TFBGA48 Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...3.6V |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C1616-55TIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TSOP48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 55ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...3.6V |
auf Bestellung 154 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||
AS6C1616-55TINLTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TSOP48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 55ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...3.6V |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C1616-55TINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TSOP48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 55ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...3.6V |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C1616-70BIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 70ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 70ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...3.6V |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C1616-70BINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 70ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 70ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...3.6V |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C1616-55BIN | Alliance Memory | SRAM 16M 3V 55ns 1024Kx16 LP Asy SRAM |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C1616-55BIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 55ns Case: TFBGA48 Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...3.6V Anzahl je Verpackung: 480 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C1616-55BINTR | Alliance Memory | SRAM 16M 3V 55ns 1024Kx16 LP Asy SRAM |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C1616-55BINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 55ns Case: TFBGA48 Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...3.6V Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C1616-55TIN | ALLIANCE MEMORY |
Description: ALLIANCE MEMORY - AS6C1616-55TIN - SRAM, Asynchron, 16 Mbit, 1024K x 16 Bit, TSOP-I, 48 Pin(s), 2.7 V tariffCode: 85423245 rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Speicherdichte: 16Mbit usEccn: 3A991.b.2.a Versorgungsspannung, nom.: 3V Taktfrequenz, max.: -MHz Betriebstemperatur, min.: -40°C Versorgungsspannung, min.: 2.7V euEccn: NLR Anzahl der Pins: 48Pin(s) productTraceability: No Versorgungsspannung, max.: 3.6V Betriebstemperatur, max.: 85°C |
auf Bestellung 80 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||||
AS6C1616-55TIN | Alliance Memory | SRAM 16M, 2.7-3.6V, 55ns 1024K x 16 Asyn SRAM |
auf Bestellung 1720 Stücke: Lieferzeit 14-28 Tag (e) |
|
|||||||||||||||
AS6C1616-55TIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TSOP48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 55ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...3.6V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 154 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
AS6C1616-55TINL | Alliance Memory | SRAM 16M 3V 55ns LP 1024Kx16 Asynch IT |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C1616-55TINLTR | Alliance Memory | SRAM 16M 3V 55ns LP 1024Kx16 Asynch IT |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C1616-55TINLTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TSOP48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 55ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...3.6V Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C1616-55TINTR | Alliance Memory | SRAM 16M, 2.7-3.6V, 55ns 1024K x 16 Asyn SRAM |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C1616-55TINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TSOP48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 55ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...3.6V Anzahl je Verpackung: 1500 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C1616-70BIN | Alliance Memory | SRAM 16M, 3V, 70ns 1024K x 16 Asyn SRAM |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C1616-70BIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 70ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 70ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...3.6V Anzahl je Verpackung: 480 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C1616-70BINTR | Alliance Memory | SRAM 16M, 2.7-3.6V, 55ns 1024K x 16 Asyn SRAM |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C1616-70BINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 70ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 70ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...3.6V Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C1616A-55BINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 55ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...3.6V |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C1616A-55BIN | Alliance Memory | SRAM 16M, 2.7-3.6V, 55ns 1024K x 16 Asyn SRAM |
auf Bestellung 364 Stücke: Lieferzeit 14-28 Tag (e) |
||||||||||||||||
AS6C1616A-55BINTR | Alliance Memory | SRAM 16M, 2.7-3.6V, 55ns 1024K x 16 Asyn SRAM |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C1616A-55BINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 55ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...3.6V Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C1616B-45TIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 45ns; TSOP48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 45ns Case: TSOP48 Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...3.6V |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C1616B-45TINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 45ns; TSOP48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 45ns Case: TSOP48 Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...3.6V |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C1616B-55BIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 55ns Case: TFBGA48 Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...3.6V |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C1616B-55BINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 55ns Case: TFBGA48 Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...3.6V |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C1616B-55TINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TSOP48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 55ns Case: TSOP48 Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...3.6V |
Produkt ist nicht verfügbar |
AS6C1008-55TINL |
Hersteller: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.7÷5.5V; 55ns; TSOP32
Mounting: SMD
Case: TSOP32
Operating voltage: 2.7...5.5V
Integrated circuit features: LPC
Kind of interface: parallel
Memory: 1Mb SRAM
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory organisation: 128kx8bit
Access time: 55ns
Anzahl je Verpackung: 1 Stücke
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.7÷5.5V; 55ns; TSOP32
Mounting: SMD
Case: TSOP32
Operating voltage: 2.7...5.5V
Integrated circuit features: LPC
Kind of interface: parallel
Memory: 1Mb SRAM
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory organisation: 128kx8bit
Access time: 55ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
AS6C1008-55TINLTR |
Hersteller: Alliance Memory
SRAM 1Mb, 2.7V-5.5V, 55ns 128K x 8 Asynch SRAM
SRAM 1Mb, 2.7V-5.5V, 55ns 128K x 8 Asynch SRAM
Produkt ist nicht verfügbar
AS6C1008-55TINLTR |
Hersteller: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.7÷5.5V; 55ns; TSOP32
Mounting: SMD
Case: TSOP32
Operating voltage: 2.7...5.5V
Integrated circuit features: LPC
Kind of interface: parallel
Memory: 1Mb SRAM
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory organisation: 128kx8bit
Access time: 55ns
Anzahl je Verpackung: 1500 Stücke
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.7÷5.5V; 55ns; TSOP32
Mounting: SMD
Case: TSOP32
Operating voltage: 2.7...5.5V
Integrated circuit features: LPC
Kind of interface: parallel
Memory: 1Mb SRAM
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory organisation: 128kx8bit
Access time: 55ns
Anzahl je Verpackung: 1500 Stücke
Produkt ist nicht verfügbar
AS6C1008-55TINTR |
Hersteller: Alliance Memory
SRAM 1Mb, 2.7V-5.5V, 55ns 128K x 8 Asynch SRAM
SRAM 1Mb, 2.7V-5.5V, 55ns 128K x 8 Asynch SRAM
Produkt ist nicht verfügbar
AS6C1008-55TINTR |
Hersteller: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.7÷5.5V; 55ns; TSOP32
Mounting: SMD
Case: TSOP32
Operating voltage: 2.7...5.5V
Integrated circuit features: LPC
Kind of interface: parallel
Memory: 1Mb SRAM
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory organisation: 128kx8bit
Access time: 55ns
Anzahl je Verpackung: 1500 Stücke
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.7÷5.5V; 55ns; TSOP32
Mounting: SMD
Case: TSOP32
Operating voltage: 2.7...5.5V
Integrated circuit features: LPC
Kind of interface: parallel
Memory: 1Mb SRAM
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory organisation: 128kx8bit
Access time: 55ns
Anzahl je Verpackung: 1500 Stücke
Produkt ist nicht verfügbar
AS6C1016-55BIN |
Hersteller: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.7÷5.5V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...5.5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.7÷5.5V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...5.5V
Produkt ist nicht verfügbar
AS6C1016-55BINTR |
Hersteller: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.7÷5.5V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...5.5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.7÷5.5V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...5.5V
Produkt ist nicht verfügbar
AS6C1016-55ZINTR |
Hersteller: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.7÷5.5V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
IC width: 400mils
Operating voltage: 2.7...5.5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.7÷5.5V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
IC width: 400mils
Operating voltage: 2.7...5.5V
Produkt ist nicht verfügbar
AS6C1016-55BIN |
Hersteller: Alliance Memory
SRAM 1Mb, 2.7V-5.5V, 55ns 64K x 8 Asynch SRAM
SRAM 1Mb, 2.7V-5.5V, 55ns 64K x 8 Asynch SRAM
Produkt ist nicht verfügbar
AS6C1016-55BIN |
Hersteller: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.7÷5.5V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...5.5V
Anzahl je Verpackung: 480 Stücke
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.7÷5.5V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...5.5V
Anzahl je Verpackung: 480 Stücke
Produkt ist nicht verfügbar
AS6C1016-55BINTR |
Hersteller: Alliance Memory
SRAM 1Mb, 2.7V-5.5V, 55ns 64K x 16
SRAM 1Mb, 2.7V-5.5V, 55ns 64K x 16
Produkt ist nicht verfügbar
AS6C1016-55BINTR |
Hersteller: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.7÷5.5V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...5.5V
Anzahl je Verpackung: 2000 Stücke
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.7÷5.5V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...5.5V
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
AS6C1016-55ZIN |
Hersteller: Alliance Memory
SRAM LP SRAM, 1Mb, 64K x 16, 2.7 - 5.5V, 44pin TSOP II, 55ns, Industrial Temp - Tray
SRAM LP SRAM, 1Mb, 64K x 16, 2.7 - 5.5V, 44pin TSOP II, 55ns, Industrial Temp - Tray
auf Bestellung 134 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 8.11 EUR |
10+ | 7.2 EUR |
100+ | 6.45 EUR |
270+ | 6.29 EUR |
540+ | 5.8 EUR |
1080+ | 5.69 EUR |
2565+ | 5.64 EUR |
AS6C1016-55ZINTR |
Hersteller: Alliance Memory
SRAM 1Mb, 2.7V-5.5V, 55ns 128K x 8 Asynch SRAM
SRAM 1Mb, 2.7V-5.5V, 55ns 128K x 8 Asynch SRAM
Produkt ist nicht verfügbar
AS6C1016-55ZINTR |
Hersteller: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.7÷5.5V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
IC width: 400mils
Operating voltage: 2.7...5.5V
Anzahl je Verpackung: 1000 Stücke
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.7÷5.5V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
IC width: 400mils
Operating voltage: 2.7...5.5V
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
AS6C1608-55BIN |
Hersteller: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 2.7÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Access time: 55ns
Case: TFBGA48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 2.7÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Access time: 55ns
Case: TFBGA48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
AS6C1608-55BINTR |
Hersteller: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 2.7÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Access time: 55ns
Case: TFBGA48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 2.7÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Access time: 55ns
Case: TFBGA48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
AS6C1608-55BIN |
Hersteller: Alliance Memory
SRAM 16M 3V 55ns 2048Kx8 LP Asyn SRAM
SRAM 16M 3V 55ns 2048Kx8 LP Asyn SRAM
auf Bestellung 13 Stücke:
Lieferzeit 14-28 Tag (e)AS6C1608-55BIN |
Hersteller: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 2.7÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Access time: 55ns
Case: TFBGA48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
Anzahl je Verpackung: 135 Stücke
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 2.7÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Access time: 55ns
Case: TFBGA48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
Anzahl je Verpackung: 135 Stücke
Produkt ist nicht verfügbar
AS6C1608-55BINTR |
Hersteller: Alliance Memory
SRAM 16M 3V 55ns 2048Kx8 LP Asyn SRAM
SRAM 16M 3V 55ns 2048Kx8 LP Asyn SRAM
Produkt ist nicht verfügbar
AS6C1608-55BINTR |
Hersteller: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 2.7÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Access time: 55ns
Case: TFBGA48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
Anzahl je Verpackung: 1000 Stücke
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 2.7÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Access time: 55ns
Case: TFBGA48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
AS6C1608-55TIN |
Hersteller: Alliance Memory
SRAM 16M 3V 55ns 2048Kx8 LP Asyn SRAM
SRAM 16M 3V 55ns 2048Kx8 LP Asyn SRAM
auf Bestellung 86 Stücke:
Lieferzeit 14-28 Tag (e)AS6C1608-55TINTR |
Hersteller: Alliance Memory
SRAM 16M 3V 55ns 2048Kx8 LP Asyn SRAM
SRAM 16M 3V 55ns 2048Kx8 LP Asyn SRAM
Produkt ist nicht verfügbar
AS6C1608B-45BIN |
Hersteller: Alliance Memory
SRAM LP SRAM, 16Mb, 2048k x 8, 2.7 - 3.6V, 48ball TFBGA, Industrial Temp - Tray
SRAM LP SRAM, 16Mb, 2048k x 8, 2.7 - 3.6V, 48ball TFBGA, Industrial Temp - Tray
Produkt ist nicht verfügbar
AS6C1608B-45TIN |
Hersteller: Alliance Memory
SRAM LP SRAM, 16Mb, 2048k x 8, 2.7 - 3.6V, 44pin TSOP II, Industrial Temp - Tray
SRAM LP SRAM, 16Mb, 2048k x 8, 2.7 - 3.6V, 44pin TSOP II, Industrial Temp - Tray
Produkt ist nicht verfügbar
AS6C1608B-55TIN |
Hersteller: ALLIANCE MEMORY
AS6C1608B-55TIN Parallel SRAM memories - integ. circ.
AS6C1608B-55TIN Parallel SRAM memories - integ. circ.
Produkt ist nicht verfügbar
AS6C1608B-55TINTR |
Hersteller: ALLIANCE MEMORY
AS6C1608B-55TINTR Parallel SRAM memories - integ. circ.
AS6C1608B-55TINTR Parallel SRAM memories - integ. circ.
Produkt ist nicht verfügbar
AS6C1616-55BIN |
Hersteller: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: TFBGA48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: TFBGA48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
AS6C1616-55BINTR |
Hersteller: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: TFBGA48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: TFBGA48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
AS6C1616-55TIN |
Hersteller: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
auf Bestellung 154 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 19.59 EUR |
6+ | 12.98 EUR |
135+ | 12.87 EUR |
AS6C1616-55TINLTR |
Hersteller: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
AS6C1616-55TINTR |
Hersteller: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
AS6C1616-70BIN |
Hersteller: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
AS6C1616-70BINTR |
Hersteller: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
AS6C1616-55BIN |
Hersteller: Alliance Memory
SRAM 16M 3V 55ns 1024Kx16 LP Asy SRAM
SRAM 16M 3V 55ns 1024Kx16 LP Asy SRAM
Produkt ist nicht verfügbar
AS6C1616-55BIN |
Hersteller: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: TFBGA48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
Anzahl je Verpackung: 480 Stücke
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: TFBGA48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
Anzahl je Verpackung: 480 Stücke
Produkt ist nicht verfügbar
AS6C1616-55BINTR |
Hersteller: Alliance Memory
SRAM 16M 3V 55ns 1024Kx16 LP Asy SRAM
SRAM 16M 3V 55ns 1024Kx16 LP Asy SRAM
Produkt ist nicht verfügbar
AS6C1616-55BINTR |
Hersteller: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: TFBGA48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
Anzahl je Verpackung: 2000 Stücke
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: TFBGA48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
AS6C1616-55TIN |
Hersteller: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS6C1616-55TIN - SRAM, Asynchron, 16 Mbit, 1024K x 16 Bit, TSOP-I, 48 Pin(s), 2.7 V
tariffCode: 85423245
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Speicherdichte: 16Mbit
usEccn: 3A991.b.2.a
Versorgungsspannung, nom.: 3V
Taktfrequenz, max.: -MHz
Betriebstemperatur, min.: -40°C
Versorgungsspannung, min.: 2.7V
euEccn: NLR
Anzahl der Pins: 48Pin(s)
productTraceability: No
Versorgungsspannung, max.: 3.6V
Betriebstemperatur, max.: 85°C
Description: ALLIANCE MEMORY - AS6C1616-55TIN - SRAM, Asynchron, 16 Mbit, 1024K x 16 Bit, TSOP-I, 48 Pin(s), 2.7 V
tariffCode: 85423245
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Speicherdichte: 16Mbit
usEccn: 3A991.b.2.a
Versorgungsspannung, nom.: 3V
Taktfrequenz, max.: -MHz
Betriebstemperatur, min.: -40°C
Versorgungsspannung, min.: 2.7V
euEccn: NLR
Anzahl der Pins: 48Pin(s)
productTraceability: No
Versorgungsspannung, max.: 3.6V
Betriebstemperatur, max.: 85°C
auf Bestellung 80 Stücke:
Lieferzeit 14-21 Tag (e)AS6C1616-55TIN |
Hersteller: Alliance Memory
SRAM 16M, 2.7-3.6V, 55ns 1024K x 16 Asyn SRAM
SRAM 16M, 2.7-3.6V, 55ns 1024K x 16 Asyn SRAM
auf Bestellung 1720 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 28.78 EUR |
10+ | 26.68 EUR |
25+ | 24.21 EUR |
96+ | 22.8 EUR |
288+ | 21.45 EUR |
576+ | 20.75 EUR |
2592+ | 20.46 EUR |
AS6C1616-55TIN |
Hersteller: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
Anzahl je Verpackung: 1 Stücke
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 154 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 19.59 EUR |
6+ | 12.98 EUR |
135+ | 12.87 EUR |
AS6C1616-55TINL |
Hersteller: Alliance Memory
SRAM 16M 3V 55ns LP 1024Kx16 Asynch IT
SRAM 16M 3V 55ns LP 1024Kx16 Asynch IT
Produkt ist nicht verfügbar
AS6C1616-55TINLTR |
Hersteller: Alliance Memory
SRAM 16M 3V 55ns LP 1024Kx16 Asynch IT
SRAM 16M 3V 55ns LP 1024Kx16 Asynch IT
Produkt ist nicht verfügbar
AS6C1616-55TINLTR |
Hersteller: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
Anzahl je Verpackung: 1000 Stücke
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
AS6C1616-55TINTR |
Hersteller: Alliance Memory
SRAM 16M, 2.7-3.6V, 55ns 1024K x 16 Asyn SRAM
SRAM 16M, 2.7-3.6V, 55ns 1024K x 16 Asyn SRAM
Produkt ist nicht verfügbar
AS6C1616-55TINTR |
Hersteller: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
Anzahl je Verpackung: 1500 Stücke
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
Anzahl je Verpackung: 1500 Stücke
Produkt ist nicht verfügbar
AS6C1616-70BIN |
Hersteller: Alliance Memory
SRAM 16M, 3V, 70ns 1024K x 16 Asyn SRAM
SRAM 16M, 3V, 70ns 1024K x 16 Asyn SRAM
Produkt ist nicht verfügbar
AS6C1616-70BIN |
Hersteller: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
Anzahl je Verpackung: 480 Stücke
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
Anzahl je Verpackung: 480 Stücke
Produkt ist nicht verfügbar
AS6C1616-70BINTR |
Hersteller: Alliance Memory
SRAM 16M, 2.7-3.6V, 55ns 1024K x 16 Asyn SRAM
SRAM 16M, 2.7-3.6V, 55ns 1024K x 16 Asyn SRAM
Produkt ist nicht verfügbar
AS6C1616-70BINTR |
Hersteller: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
Anzahl je Verpackung: 2000 Stücke
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
AS6C1616A-55BINTR |
Hersteller: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
AS6C1616A-55BIN |
Hersteller: Alliance Memory
SRAM 16M, 2.7-3.6V, 55ns 1024K x 16 Asyn SRAM
SRAM 16M, 2.7-3.6V, 55ns 1024K x 16 Asyn SRAM
auf Bestellung 364 Stücke:
Lieferzeit 14-28 Tag (e)AS6C1616A-55BINTR |
Hersteller: Alliance Memory
SRAM 16M, 2.7-3.6V, 55ns 1024K x 16 Asyn SRAM
SRAM 16M, 2.7-3.6V, 55ns 1024K x 16 Asyn SRAM
Produkt ist nicht verfügbar
AS6C1616A-55BINTR |
Hersteller: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
Anzahl je Verpackung: 1000 Stücke
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
AS6C1616B-45TIN |
Hersteller: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 45ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 45ns
Case: TSOP48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 45ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 45ns
Case: TSOP48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
AS6C1616B-45TINTR |
Hersteller: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 45ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 45ns
Case: TSOP48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 45ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 45ns
Case: TSOP48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
AS6C1616B-55BIN |
Hersteller: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: TFBGA48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: TFBGA48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
AS6C1616B-55BINTR |
Hersteller: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: TFBGA48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: TFBGA48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
AS6C1616B-55TINTR |
Hersteller: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: TSOP48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: TSOP48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar