Produkte > ALLIANCE MEMORY > Alle Produkte des Herstellers ALLIANCE MEMORY (3690) > Seite 15 nach 62
Foto | Bezeichnung | Hersteller | Beschreibung |
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AS4C32M16MSA-6BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 1.7V; 166MHz; 5.5ns; FBGA54 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 512Mb DRAM Memory organisation: 32Mx16bit Clock frequency: 166MHz Access time: 5.5ns Case: FBGA54 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel Operating voltage: 1.7V |
Produkt ist nicht verfügbar |
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AS4C32M16MSA-6BIN | Alliance Memory | DRAM 512M 166MHz 32Mx16 Mobile LP SDRAM IT |
auf Bestellung 210 Stücke: Lieferzeit 10-14 Tag (e) |
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AS4C32M16MSA-6BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 32Mx16bit; 1.7V; 166MHz; 5.5ns; FBGA54; -40÷85°C Type of integrated circuit: DRAM memory Case: FBGA54 Mounting: SMD Operating temperature: -40...85°C Operating voltage: 1.7V Kind of package: in-tray Clock frequency: 166MHz Kind of memory: DDR1; SDRAM Kind of interface: parallel Memory capacity: 512Mb Memory organisation: 32Mx16bit Access time: 5.5ns |
Produkt ist nicht verfügbar |
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AS4C32M16MSA-6BINTR | Alliance Memory | DRAM 512M 166MHz 32Mx16 Mobile LP SDRAM IT |
Produkt ist nicht verfügbar |
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AS4C32M16MSA-6BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 1.7V; 166MHz; 5.5ns; FBGA54 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 512Mb DRAM Memory organisation: 32Mx16bit Clock frequency: 166MHz Access time: 5.5ns Case: FBGA54 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel Operating voltage: 1.7V Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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AS4C32M16SA-7BCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 32Mx16bit; 3÷3.6V; 143MHz; 6ns; FBGA54; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 32Mx16bit Clock frequency: 143MHz Access time: 6ns Case: FBGA54 Memory capacity: 512Mb Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Operating voltage: 3...3.6V |
Produkt ist nicht verfügbar |
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AS4C32M16SA-7BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 32Mx16bit; 3÷3.6V; 143MHz; 6ns; FBGA54; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 32Mx16bit Clock frequency: 143MHz Access time: 6ns Case: FBGA54 Memory capacity: 512Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Operating voltage: 3...3.6V |
Produkt ist nicht verfügbar |
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AS4C32M16SA-7TCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 32Mx16bit; 3.3V; 143MHz; 5.4ns; TSOP54; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 32Mx16bit Clock frequency: 143MHz Access time: 5.4ns Case: TSOP54 Memory capacity: 512Mb Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel Operating voltage: 3.3V |
Produkt ist nicht verfügbar |
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AS4C32M16SA-7TIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 32Mx16bit; 3.3V; 143MHz; 5.4ns; TSOP54; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 32Mx16bit Clock frequency: 143MHz Access time: 5.4ns Case: TSOP54 Memory capacity: 512Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 3.3V |
Produkt ist nicht verfügbar |
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AS4C32M16SA-7TINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 32Mx16bit; 3.3V; 143MHz; 5.4ns; TSOP54; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 32Mx16bit Clock frequency: 143MHz Access time: 5.4ns Case: TSOP54 Memory capacity: 512Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel Operating voltage: 3.3V |
Produkt ist nicht verfügbar |
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AS4C32M16SA-7BCN | Alliance Memory | DRAM SDRAM,512M,3.3V 143MHz, 32M x 16 |
Produkt ist nicht verfügbar |
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AS4C32M16SA-7BCNTR | Alliance Memory | DRAM 512M 3.3V 143MHz 32M x 16 COM TEMP |
Produkt ist nicht verfügbar |
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AS4C32M16SA-7BIN | Alliance Memory | DRAM 512M 3.3V 143MHz 32M x 16 IND TEMP |
auf Bestellung 347 Stücke: Lieferzeit 10-14 Tag (e) |
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AS4C32M16SA-7BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 32Mx16bit; 3÷3.6V; 143MHz; 6ns; FBGA54; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 32Mx16bit Clock frequency: 143MHz Access time: 6ns Case: FBGA54 Memory capacity: 512Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Operating voltage: 3...3.6V |
Produkt ist nicht verfügbar |
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AS4C32M16SA-7BINTR | Alliance Memory | DRAM 512M 3.3V 143MHz 32M x 16 IND TEMP |
Produkt ist nicht verfügbar |
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AS4C32M16SA-7TCN | Alliance Memory | DRAM 512M, 3.3V, 32M x 16 SDRAM |
auf Bestellung 692 Stücke: Lieferzeit 10-14 Tag (e) |
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AS4C32M16SA-7TCNTR | Alliance Memory | DRAM 512M, 3.3V, 32M x 16 SDRAM |
Produkt ist nicht verfügbar |
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AS4C32M16SA-7TCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 32Mx16bit; 3.3V; 143MHz; 5.4ns; TSOP54; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 32Mx16bit Clock frequency: 143MHz Access time: 5.4ns Case: TSOP54 Memory capacity: 512Mb Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel Operating voltage: 3.3V |
Produkt ist nicht verfügbar |
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AS4C32M16SA-7TIN | Alliance Memory | DRAM 512M, 3.3V, 32M x 16 SDRAM |
auf Bestellung 1074 Stücke: Lieferzeit 10-14 Tag (e) |
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AS4C32M16SA-7TINTR | Alliance Memory | DRAM 512M, 3.3V, 32M x 16 SDRAM |
Produkt ist nicht verfügbar |
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AS4C32M16SA-7TINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 32Mx16bit; 3.3V; 143MHz; 5.4ns; TSOP54; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 32Mx16bit Clock frequency: 143MHz Access time: 5.4ns Case: TSOP54 Memory capacity: 512Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel Operating voltage: 3.3V |
Produkt ist nicht verfügbar |
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AS4C32M16SB-6TIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8Mx16bitx4; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 8Mx16bitx4 Clock frequency: 166MHz Access time: 5ns Case: TSOP54 II Memory capacity: 512Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 3.3V |
Produkt ist nicht verfügbar |
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AS4C32M16SB-6TINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8Mx16bitx4; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 8Mx16bitx4 Clock frequency: 166MHz Access time: 5ns Case: TSOP54 II Memory capacity: 512Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel Operating voltage: 3.3V |
Produkt ist nicht verfügbar |
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AS4C32M16SB-7BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns Operating temperature: -40...85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 8Mx16bitx4 Access time: 5.4ns Clock frequency: 143MHz Kind of package: in-tray Memory: 512Mb DRAM Mounting: SMD Case: TSOP54 II Operating voltage: 3.3V |
Produkt ist nicht verfügbar |
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AS4C32M16SB-7BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns; reel Operating temperature: -40...85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 8Mx16bitx4 Access time: 5.4ns Clock frequency: 143MHz Kind of package: reel Memory: 512Mb DRAM Mounting: SMD Case: TSOP54 II Operating voltage: 3.3V |
Produkt ist nicht verfügbar |
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AS4C32M16SB-7TCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Access time: 5.4ns Case: TSOP54 II Kind of interface: parallel Mounting: SMD Kind of package: in-tray Operating temperature: 0...70°C Clock frequency: 143MHz Operating voltage: 3.3V |
auf Bestellung 267 Stücke: Lieferzeit 14-21 Tag (e) |
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AS4C32M16SB-7TCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 143MHz Access time: 5.4ns Case: TSOP54 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel Operating voltage: 3.3V |
Produkt ist nicht verfügbar |
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AS4C32M16SB-7TIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns Operating temperature: -40...85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 8Mx16bitx4 Access time: 5.4ns Clock frequency: 143MHz Kind of package: in-tray Kind of interface: parallel Memory: 512Mb DRAM Mounting: SMD Case: TSOP54 II Operating voltage: 3.3V |
Produkt ist nicht verfügbar |
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AS4C32M16SB-7TINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns; reel Operating temperature: -40...85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 8Mx16bitx4 Access time: 5.4ns Clock frequency: 143MHz Kind of package: reel Kind of interface: parallel Memory: 512Mb DRAM Mounting: SMD Case: TSOP54 II Operating voltage: 3.3V |
Produkt ist nicht verfügbar |
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AS4C32M16SB-6TIN | Alliance Memory | DRAM 512M 3.3V 133MHz 32M x 16 SDRAM |
auf Bestellung 309 Stücke: Lieferzeit 10-14 Tag (e) |
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AS4C32M16SB-6TIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8Mx16bitx4; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 8Mx16bitx4 Clock frequency: 166MHz Access time: 5ns Case: TSOP54 II Memory capacity: 512Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 3.3V |
Produkt ist nicht verfügbar |
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AS4C32M16SB-6TINTR | Alliance Memory | DRAM 512M 3.3V 133MHz 32M x 16 SDRAM |
Produkt ist nicht verfügbar |
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AS4C32M16SB-6TINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8Mx16bitx4; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 8Mx16bitx4 Clock frequency: 166MHz Access time: 5ns Case: TSOP54 II Memory capacity: 512Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel Operating voltage: 3.3V |
Produkt ist nicht verfügbar |
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AS4C32M16SB-7BIN | ALLIANCE MEMORY |
Description: ALLIANCE MEMORY - AS4C32M16SB-7BIN - DRAM, SDRAM, 512 Mbit, 32M x 16 Bit, 143 MHz, FBGA, 54 Pin(s) tariffCode: 85423231 DRAM-Ausführung: SDRAM rohsCompliant: YES IC-Montage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES IC-Gehäuse / Bauform: FBGA Speicherdichte: 512Mbit usEccn: EAR99 Versorgungsspannung, nom.: 3.3V Taktfrequenz, max.: 143MHz Betriebstemperatur, min.: -40°C euEccn: NLR Anzahl der Pins: 54Pins Produktpalette: - productTraceability: No Betriebstemperatur, max.: 85°C Speicherkonfiguration: 32M x 16 Bit SVHC: To Be Advised |
auf Bestellung 148 Stücke: Lieferzeit 14-21 Tag (e) |
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AS4C32M16SB-7BIN | Alliance Memory | DRAM SDR, 512Mb, 32M x 16, 3.3V, 54-ball FBGA, 143MHz, Industrial Temp, B Die |
auf Bestellung 1091 Stücke: Lieferzeit 10-14 Tag (e) |
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AS4C32M16SB-7BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns Operating temperature: -40...85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 8Mx16bitx4 Access time: 5.4ns Clock frequency: 143MHz Kind of package: in-tray Memory: 512Mb DRAM Mounting: SMD Case: TSOP54 II Operating voltage: 3.3V Anzahl je Verpackung: 348 Stücke |
Produkt ist nicht verfügbar |
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AS4C32M16SB-7BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns; reel Operating temperature: -40...85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 8Mx16bitx4 Access time: 5.4ns Clock frequency: 143MHz Kind of package: reel Memory: 512Mb DRAM Mounting: SMD Case: TSOP54 II Operating voltage: 3.3V Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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AS4C32M16SB-7TCN | ALLIANCE MEMORY |
Description: ALLIANCE MEMORY - AS4C32M16SB-7TCN - DRAM, SDRAM, 512 Mbit, 32M x 16 Bit, 143 MHz, TSOP-II, 54 Pin(s) tariffCode: 85423231 DRAM-Ausführung: SDRAM rohsCompliant: YES IC-Montage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES IC-Gehäuse / Bauform: TSOP-II Speicherdichte: 512Mbit usEccn: EAR99 Versorgungsspannung, nom.: 3.3V Taktfrequenz, max.: 143MHz Betriebstemperatur, min.: - euEccn: NLR Anzahl der Pins: 54Pins Produktpalette: - productTraceability: No Betriebstemperatur, max.: 70°C Speicherkonfiguration: 32M x 16 Bit SVHC: To Be Advised |
auf Bestellung 48 Stücke: Lieferzeit 14-21 Tag (e) |
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AS4C32M16SB-7TCN | Alliance Memory | DRAM 512M 3.3V 143MHz 32M x 16 SDRAM |
auf Bestellung 781 Stücke: Lieferzeit 10-14 Tag (e) |
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AS4C32M16SB-7TCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Access time: 5.4ns Case: TSOP54 II Kind of interface: parallel Mounting: SMD Kind of package: in-tray Operating temperature: 0...70°C Clock frequency: 143MHz Operating voltage: 3.3V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 267 Stücke: Lieferzeit 7-14 Tag (e) |
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AS4C32M16SB-7TCN | Alliance Memory | Динамічна енергозалежна пам'ять SDRAM; Uживл, В = 3,3; Об'єм RAM = 512 Мбайт; Орг. пам. = 32M x 16; Тдост/Частота = 143; Тексп, °C = -40...+85; Тип інтерф. = Паралельний; TSOPII-54 |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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AS4C32M16SB-7TCNTR | Alliance Memory | DRAM 512M 3.3V 143MHz 32M x 16 SDRAM |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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AS4C32M16SB-7TCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 143MHz Access time: 5.4ns Case: TSOP54 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel Operating voltage: 3.3V Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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AS4C32M16SB-7TIN | ALLIANCE MEMORY |
Description: ALLIANCE MEMORY - AS4C32M16SB-7TIN - DRAM, SDRAM, 512 Mbit, 32M x 16 Bit, 143 MHz, TSOP-II, 54 Pin(s) tariffCode: 85423231 DRAM-Ausführung: SDRAM rohsCompliant: YES IC-Montage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES IC-Gehäuse / Bauform: TSOP-II Speicherdichte: 512Mbit usEccn: EAR99 Versorgungsspannung, nom.: 3.3V Taktfrequenz, max.: 143MHz Betriebstemperatur, min.: -40°C euEccn: NLR Anzahl der Pins: 54Pins Produktpalette: - productTraceability: No Betriebstemperatur, max.: 85°C Speicherkonfiguration: 32M x 16 Bit SVHC: To Be Advised |
auf Bestellung 116 Stücke: Lieferzeit 14-21 Tag (e) |
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AS4C32M16SB-7TIN | Alliance Memory | DRAM 512M 3.3V 143MHz 32M x 16 SDRAM |
auf Bestellung 1063 Stücke: Lieferzeit 10-14 Tag (e) |
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AS4C32M16SB-7TIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns Operating temperature: -40...85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 8Mx16bitx4 Access time: 5.4ns Clock frequency: 143MHz Kind of package: in-tray Kind of interface: parallel Memory: 512Mb DRAM Mounting: SMD Case: TSOP54 II Operating voltage: 3.3V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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AS4C32M16SB-7TINTR | Alliance Memory | DRAM 512M 3.3V 143MHz 32M x 16 SDRAM |
auf Bestellung 1420 Stücke: Lieferzeit 10-14 Tag (e) |
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AS4C32M16SB-7TINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns; reel Operating temperature: -40...85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 8Mx16bitx4 Access time: 5.4ns Clock frequency: 143MHz Kind of package: reel Kind of interface: parallel Memory: 512Mb DRAM Mounting: SMD Case: TSOP54 II Operating voltage: 3.3V Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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AS4C32M16SC-7TIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 32Mx16bit; 3.3V; 133MHz; 5.4ns; TSOP54 II; in-tray Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 32Mx16bit Clock frequency: 133MHz Access time: 5.4ns Case: TSOP54 II Memory capacity: 512Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 3.3V |
Produkt ist nicht verfügbar |
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AS4C32M16SC-7TINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 32Mx16bit; 3.3V; 133MHz; 5.4ns; TSOP54 II; reel Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 32Mx16bit Clock frequency: 133MHz Access time: 5.4ns Case: TSOP54 II Memory capacity: 512Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel Operating voltage: 3.3V |
Produkt ist nicht verfügbar |
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AS4C32M16SC-7TIN | ALLIANCE MEMORY |
Description: ALLIANCE MEMORY - AS4C32M16SC-7TIN - DRAM, SDRAM, 512 Mbit, 32M x 16 Bit, 133 MHz, TSOP-II, 54 Pin(s) tariffCode: 85423231 DRAM-Ausführung: SDRAM rohsCompliant: YES IC-Montage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES IC-Gehäuse / Bauform: TSOP-II Speicherdichte: 512Mbit usEccn: EAR99 Versorgungsspannung, nom.: 3.3V Taktfrequenz, max.: 133MHz Betriebstemperatur, min.: -40°C euEccn: NLR Anzahl der Pins: 54Pins Produktpalette: - productTraceability: No Betriebstemperatur, max.: 85°C Speicherkonfiguration: 32M x 16 Bit SVHC: To Be Advised |
auf Bestellung 89 Stücke: Lieferzeit 14-21 Tag (e) |
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AS4C32M16SC-7TIN | Alliance Memory | DRAM 512Mb 32Mx16 3.3V 143MHz SDRAM I-Temp |
auf Bestellung 416 Stücke: Lieferzeit 10-14 Tag (e) |
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AS4C32M16SC-7TIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 32Mx16bit; 3.3V; 133MHz; 5.4ns; TSOP54 II; in-tray Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 32Mx16bit Clock frequency: 133MHz Access time: 5.4ns Case: TSOP54 II Memory capacity: 512Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 3.3V |
Produkt ist nicht verfügbar |
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AS4C32M16SC-7TINTR | Alliance Memory | DRAM 512Mb 32Mx16 3.3V 143MHz SDRAM I-Temp |
Produkt ist nicht verfügbar |
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AS4C32M16SC-7TINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 32Mx16bit; 3.3V; 133MHz; 5.4ns; TSOP54 II; reel Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 32Mx16bit Clock frequency: 133MHz Access time: 5.4ns Case: TSOP54 II Memory capacity: 512Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel Operating voltage: 3.3V |
Produkt ist nicht verfügbar |
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AS4C32M16SM-7TCN | Alliance Memory | DRAM 512Mb, 3.3v, 133Mhz 32M x 16 SDR |
Produkt ist nicht verfügbar |
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AS4C32M16SM-7TIN | Alliance Memory | DRAM 512Mb, 3.3v, 133Mhz 32M x 16 SDR |
auf Bestellung 13 Stücke: Lieferzeit 10-14 Tag (e) |
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AS4C32M32MD1-5BCN | Alliance Memory | DRAM 1G, 1.8V, 200Mhz 32M x 32 Mobile DDR |
auf Bestellung 51 Stücke: Lieferzeit 10-14 Tag (e) |
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AS4C32M32MD1-5BCNTR | Alliance Memory | DRAM 1G, 1.8V, 200Mhz 32M x 32 Mobile DDR |
Produkt ist nicht verfügbar |
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AS4C32M32MD1-5BIN | Alliance Memory | DRAM 1G, 1.8V, 200Mhz 32M x 32 Mobile DDR |
auf Bestellung 317 Stücke: Lieferzeit 10-14 Tag (e) |
AS4C32M16MSA-6BINTR |
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 1.7V; 166MHz; 5.5ns; FBGA54
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 512Mb DRAM
Memory organisation: 32Mx16bit
Clock frequency: 166MHz
Access time: 5.5ns
Case: FBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 1.7V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 1.7V; 166MHz; 5.5ns; FBGA54
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 512Mb DRAM
Memory organisation: 32Mx16bit
Clock frequency: 166MHz
Access time: 5.5ns
Case: FBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 1.7V
Produkt ist nicht verfügbar
AS4C32M16MSA-6BIN |
Hersteller: Alliance Memory
DRAM 512M 166MHz 32Mx16 Mobile LP SDRAM IT
DRAM 512M 166MHz 32Mx16 Mobile LP SDRAM IT
auf Bestellung 210 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 12.28 EUR |
10+ | 11.32 EUR |
25+ | 11.09 EUR |
100+ | 9.91 EUR |
250+ | 9.61 EUR |
500+ | 9.59 EUR |
957+ | 9.47 EUR |
AS4C32M16MSA-6BIN |
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 1.7V; 166MHz; 5.5ns; FBGA54; -40÷85°C
Type of integrated circuit: DRAM memory
Case: FBGA54
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.7V
Kind of package: in-tray
Clock frequency: 166MHz
Kind of memory: DDR1; SDRAM
Kind of interface: parallel
Memory capacity: 512Mb
Memory organisation: 32Mx16bit
Access time: 5.5ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 1.7V; 166MHz; 5.5ns; FBGA54; -40÷85°C
Type of integrated circuit: DRAM memory
Case: FBGA54
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.7V
Kind of package: in-tray
Clock frequency: 166MHz
Kind of memory: DDR1; SDRAM
Kind of interface: parallel
Memory capacity: 512Mb
Memory organisation: 32Mx16bit
Access time: 5.5ns
Produkt ist nicht verfügbar
AS4C32M16MSA-6BINTR |
Hersteller: Alliance Memory
DRAM 512M 166MHz 32Mx16 Mobile LP SDRAM IT
DRAM 512M 166MHz 32Mx16 Mobile LP SDRAM IT
Produkt ist nicht verfügbar
AS4C32M16MSA-6BINTR |
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 1.7V; 166MHz; 5.5ns; FBGA54
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 512Mb DRAM
Memory organisation: 32Mx16bit
Clock frequency: 166MHz
Access time: 5.5ns
Case: FBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 1.7V
Anzahl je Verpackung: 1000 Stücke
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 1.7V; 166MHz; 5.5ns; FBGA54
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 512Mb DRAM
Memory organisation: 32Mx16bit
Clock frequency: 166MHz
Access time: 5.5ns
Case: FBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 1.7V
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
AS4C32M16SA-7BCN |
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 3÷3.6V; 143MHz; 6ns; FBGA54; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 143MHz
Access time: 6ns
Case: FBGA54
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Operating voltage: 3...3.6V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 3÷3.6V; 143MHz; 6ns; FBGA54; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 143MHz
Access time: 6ns
Case: FBGA54
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Operating voltage: 3...3.6V
Produkt ist nicht verfügbar
AS4C32M16SA-7BIN |
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 3÷3.6V; 143MHz; 6ns; FBGA54; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 143MHz
Access time: 6ns
Case: FBGA54
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 3...3.6V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 3÷3.6V; 143MHz; 6ns; FBGA54; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 143MHz
Access time: 6ns
Case: FBGA54
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 3...3.6V
Produkt ist nicht verfügbar
AS4C32M16SA-7TCNTR |
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 3.3V; 143MHz; 5.4ns; TSOP54; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 3.3V; 143MHz; 5.4ns; TSOP54; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
Produkt ist nicht verfügbar
AS4C32M16SA-7TIN |
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 3.3V; 143MHz; 5.4ns; TSOP54; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 3.3V; 143MHz; 5.4ns; TSOP54; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
Produkt ist nicht verfügbar
AS4C32M16SA-7TINTR |
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 3.3V; 143MHz; 5.4ns; TSOP54; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 3.3V; 143MHz; 5.4ns; TSOP54; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
Produkt ist nicht verfügbar
AS4C32M16SA-7BCN |
Hersteller: Alliance Memory
DRAM SDRAM,512M,3.3V 143MHz, 32M x 16
DRAM SDRAM,512M,3.3V 143MHz, 32M x 16
Produkt ist nicht verfügbar
AS4C32M16SA-7BCNTR |
Hersteller: Alliance Memory
DRAM 512M 3.3V 143MHz 32M x 16 COM TEMP
DRAM 512M 3.3V 143MHz 32M x 16 COM TEMP
Produkt ist nicht verfügbar
AS4C32M16SA-7BIN |
Hersteller: Alliance Memory
DRAM 512M 3.3V 143MHz 32M x 16 IND TEMP
DRAM 512M 3.3V 143MHz 32M x 16 IND TEMP
auf Bestellung 347 Stücke:
Lieferzeit 10-14 Tag (e)AS4C32M16SA-7BIN |
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 3÷3.6V; 143MHz; 6ns; FBGA54; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 143MHz
Access time: 6ns
Case: FBGA54
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 3...3.6V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 3÷3.6V; 143MHz; 6ns; FBGA54; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 143MHz
Access time: 6ns
Case: FBGA54
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 3...3.6V
Produkt ist nicht verfügbar
AS4C32M16SA-7BINTR |
Hersteller: Alliance Memory
DRAM 512M 3.3V 143MHz 32M x 16 IND TEMP
DRAM 512M 3.3V 143MHz 32M x 16 IND TEMP
Produkt ist nicht verfügbar
AS4C32M16SA-7TCN |
Hersteller: Alliance Memory
DRAM 512M, 3.3V, 32M x 16 SDRAM
DRAM 512M, 3.3V, 32M x 16 SDRAM
auf Bestellung 692 Stücke:
Lieferzeit 10-14 Tag (e)AS4C32M16SA-7TCNTR |
Hersteller: Alliance Memory
DRAM 512M, 3.3V, 32M x 16 SDRAM
DRAM 512M, 3.3V, 32M x 16 SDRAM
Produkt ist nicht verfügbar
AS4C32M16SA-7TCNTR |
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 3.3V; 143MHz; 5.4ns; TSOP54; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 3.3V; 143MHz; 5.4ns; TSOP54; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
Produkt ist nicht verfügbar
AS4C32M16SA-7TIN |
Hersteller: Alliance Memory
DRAM 512M, 3.3V, 32M x 16 SDRAM
DRAM 512M, 3.3V, 32M x 16 SDRAM
auf Bestellung 1074 Stücke:
Lieferzeit 10-14 Tag (e)AS4C32M16SA-7TINTR |
Hersteller: Alliance Memory
DRAM 512M, 3.3V, 32M x 16 SDRAM
DRAM 512M, 3.3V, 32M x 16 SDRAM
Produkt ist nicht verfügbar
AS4C32M16SA-7TINTR |
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 3.3V; 143MHz; 5.4ns; TSOP54; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 3.3V; 143MHz; 5.4ns; TSOP54; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
Produkt ist nicht verfügbar
AS4C32M16SB-6TIN |
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bitx4; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 5ns
Case: TSOP54 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bitx4; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 5ns
Case: TSOP54 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
Produkt ist nicht verfügbar
AS4C32M16SB-6TINTR |
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bitx4; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 5ns
Case: TSOP54 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bitx4; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 5ns
Case: TSOP54 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
Produkt ist nicht verfügbar
AS4C32M16SB-7BIN |
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns
Operating temperature: -40...85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: in-tray
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns
Operating temperature: -40...85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: in-tray
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
Produkt ist nicht verfügbar
AS4C32M16SB-7BINTR |
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns; reel
Operating temperature: -40...85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: reel
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns; reel
Operating temperature: -40...85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: reel
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
Produkt ist nicht verfügbar
AS4C32M16SB-7TCN |
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Access time: 5.4ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Kind of package: in-tray
Operating temperature: 0...70°C
Clock frequency: 143MHz
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Access time: 5.4ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Kind of package: in-tray
Operating temperature: 0...70°C
Clock frequency: 143MHz
Operating voltage: 3.3V
auf Bestellung 267 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 20.11 EUR |
5+ | 14.97 EUR |
6+ | 14.14 EUR |
108+ | 13.69 EUR |
AS4C32M16SB-7TCNTR |
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
Produkt ist nicht verfügbar
AS4C32M16SB-7TIN |
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns
Operating temperature: -40...85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: in-tray
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns
Operating temperature: -40...85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: in-tray
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
Produkt ist nicht verfügbar
AS4C32M16SB-7TINTR |
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns; reel
Operating temperature: -40...85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: reel
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns; reel
Operating temperature: -40...85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: reel
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
Produkt ist nicht verfügbar
AS4C32M16SB-6TIN |
Hersteller: Alliance Memory
DRAM 512M 3.3V 133MHz 32M x 16 SDRAM
DRAM 512M 3.3V 133MHz 32M x 16 SDRAM
auf Bestellung 309 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 27.98 EUR |
10+ | 25.91 EUR |
25+ | 25.24 EUR |
108+ | 24.62 EUR |
216+ | 21.14 EUR |
540+ | 21.01 EUR |
1080+ | 20.91 EUR |
AS4C32M16SB-6TIN |
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bitx4; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 5ns
Case: TSOP54 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bitx4; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 5ns
Case: TSOP54 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
Produkt ist nicht verfügbar
AS4C32M16SB-6TINTR |
Hersteller: Alliance Memory
DRAM 512M 3.3V 133MHz 32M x 16 SDRAM
DRAM 512M 3.3V 133MHz 32M x 16 SDRAM
Produkt ist nicht verfügbar
AS4C32M16SB-6TINTR |
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bitx4; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 5ns
Case: TSOP54 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bitx4; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 5ns
Case: TSOP54 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
Produkt ist nicht verfügbar
AS4C32M16SB-7BIN |
Hersteller: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C32M16SB-7BIN - DRAM, SDRAM, 512 Mbit, 32M x 16 Bit, 143 MHz, FBGA, 54 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: SDRAM
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: FBGA
Speicherdichte: 512Mbit
usEccn: EAR99
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 143MHz
Betriebstemperatur, min.: -40°C
euEccn: NLR
Anzahl der Pins: 54Pins
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 85°C
Speicherkonfiguration: 32M x 16 Bit
SVHC: To Be Advised
Description: ALLIANCE MEMORY - AS4C32M16SB-7BIN - DRAM, SDRAM, 512 Mbit, 32M x 16 Bit, 143 MHz, FBGA, 54 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: SDRAM
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: FBGA
Speicherdichte: 512Mbit
usEccn: EAR99
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 143MHz
Betriebstemperatur, min.: -40°C
euEccn: NLR
Anzahl der Pins: 54Pins
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 85°C
Speicherkonfiguration: 32M x 16 Bit
SVHC: To Be Advised
auf Bestellung 148 Stücke:
Lieferzeit 14-21 Tag (e)AS4C32M16SB-7BIN |
Hersteller: Alliance Memory
DRAM SDR, 512Mb, 32M x 16, 3.3V, 54-ball FBGA, 143MHz, Industrial Temp, B Die
DRAM SDR, 512Mb, 32M x 16, 3.3V, 54-ball FBGA, 143MHz, Industrial Temp, B Die
auf Bestellung 1091 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 26.03 EUR |
10+ | 24.09 EUR |
25+ | 23.76 EUR |
100+ | 20.56 EUR |
250+ | 20.08 EUR |
2784+ | 18.81 EUR |
5220+ | 18.55 EUR |
AS4C32M16SB-7BIN |
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns
Operating temperature: -40...85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: in-tray
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
Anzahl je Verpackung: 348 Stücke
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns
Operating temperature: -40...85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: in-tray
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
Anzahl je Verpackung: 348 Stücke
Produkt ist nicht verfügbar
AS4C32M16SB-7BINTR |
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns; reel
Operating temperature: -40...85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: reel
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
Anzahl je Verpackung: 1000 Stücke
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns; reel
Operating temperature: -40...85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: reel
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
AS4C32M16SB-7TCN |
Hersteller: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C32M16SB-7TCN - DRAM, SDRAM, 512 Mbit, 32M x 16 Bit, 143 MHz, TSOP-II, 54 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: SDRAM
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: TSOP-II
Speicherdichte: 512Mbit
usEccn: EAR99
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 143MHz
Betriebstemperatur, min.: -
euEccn: NLR
Anzahl der Pins: 54Pins
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 70°C
Speicherkonfiguration: 32M x 16 Bit
SVHC: To Be Advised
Description: ALLIANCE MEMORY - AS4C32M16SB-7TCN - DRAM, SDRAM, 512 Mbit, 32M x 16 Bit, 143 MHz, TSOP-II, 54 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: SDRAM
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: TSOP-II
Speicherdichte: 512Mbit
usEccn: EAR99
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 143MHz
Betriebstemperatur, min.: -
euEccn: NLR
Anzahl der Pins: 54Pins
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 70°C
Speicherkonfiguration: 32M x 16 Bit
SVHC: To Be Advised
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)AS4C32M16SB-7TCN |
Hersteller: Alliance Memory
DRAM 512M 3.3V 143MHz 32M x 16 SDRAM
DRAM 512M 3.3V 143MHz 32M x 16 SDRAM
auf Bestellung 781 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 21.47 EUR |
10+ | 19.89 EUR |
25+ | 19.38 EUR |
108+ | 16.95 EUR |
216+ | 16.24 EUR |
540+ | 15.1 EUR |
AS4C32M16SB-7TCN |
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Access time: 5.4ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Kind of package: in-tray
Operating temperature: 0...70°C
Clock frequency: 143MHz
Operating voltage: 3.3V
Anzahl je Verpackung: 1 Stücke
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Access time: 5.4ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Kind of package: in-tray
Operating temperature: 0...70°C
Clock frequency: 143MHz
Operating voltage: 3.3V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 267 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 20.11 EUR |
5+ | 14.97 EUR |
6+ | 14.14 EUR |
108+ | 13.69 EUR |
AS4C32M16SB-7TCN |
Hersteller: Alliance Memory
Динамічна енергозалежна пам'ять SDRAM; Uживл, В = 3,3; Об'єм RAM = 512 Мбайт; Орг. пам. = 32M x 16; Тдост/Частота = 143; Тексп, °C = -40...+85; Тип інтерф. = Паралельний; TSOPII-54
Динамічна енергозалежна пам'ять SDRAM; Uживл, В = 3,3; Об'єм RAM = 512 Мбайт; Орг. пам. = 32M x 16; Тдост/Частота = 143; Тексп, °C = -40...+85; Тип інтерф. = Паралельний; TSOPII-54
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 36.84 EUR |
10+ | 31.74 EUR |
100+ | 27.91 EUR |
AS4C32M16SB-7TCNTR |
Hersteller: Alliance Memory
DRAM 512M 3.3V 143MHz 32M x 16 SDRAM
DRAM 512M 3.3V 143MHz 32M x 16 SDRAM
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 21.63 EUR |
10+ | 20.03 EUR |
25+ | 19.52 EUR |
100+ | 17.11 EUR |
250+ | 16.37 EUR |
500+ | 16.24 EUR |
1000+ | 15.22 EUR |
AS4C32M16SB-7TCNTR |
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
Anzahl je Verpackung: 1000 Stücke
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
AS4C32M16SB-7TIN |
Hersteller: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C32M16SB-7TIN - DRAM, SDRAM, 512 Mbit, 32M x 16 Bit, 143 MHz, TSOP-II, 54 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: SDRAM
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: TSOP-II
Speicherdichte: 512Mbit
usEccn: EAR99
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 143MHz
Betriebstemperatur, min.: -40°C
euEccn: NLR
Anzahl der Pins: 54Pins
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 85°C
Speicherkonfiguration: 32M x 16 Bit
SVHC: To Be Advised
Description: ALLIANCE MEMORY - AS4C32M16SB-7TIN - DRAM, SDRAM, 512 Mbit, 32M x 16 Bit, 143 MHz, TSOP-II, 54 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: SDRAM
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: TSOP-II
Speicherdichte: 512Mbit
usEccn: EAR99
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 143MHz
Betriebstemperatur, min.: -40°C
euEccn: NLR
Anzahl der Pins: 54Pins
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 85°C
Speicherkonfiguration: 32M x 16 Bit
SVHC: To Be Advised
auf Bestellung 116 Stücke:
Lieferzeit 14-21 Tag (e)AS4C32M16SB-7TIN |
Hersteller: Alliance Memory
DRAM 512M 3.3V 143MHz 32M x 16 SDRAM
DRAM 512M 3.3V 143MHz 32M x 16 SDRAM
auf Bestellung 1063 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 27.53 EUR |
10+ | 25.57 EUR |
25+ | 25.1 EUR |
50+ | 24.94 EUR |
108+ | 24.62 EUR |
216+ | 21.07 EUR |
540+ | 20.93 EUR |
AS4C32M16SB-7TIN |
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns
Operating temperature: -40...85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: in-tray
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
Anzahl je Verpackung: 1 Stücke
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns
Operating temperature: -40...85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: in-tray
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
AS4C32M16SB-7TINTR |
Hersteller: Alliance Memory
DRAM 512M 3.3V 143MHz 32M x 16 SDRAM
DRAM 512M 3.3V 143MHz 32M x 16 SDRAM
auf Bestellung 1420 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 25.56 EUR |
10+ | 23.65 EUR |
25+ | 23.32 EUR |
100+ | 20.19 EUR |
250+ | 19.32 EUR |
500+ | 19.2 EUR |
1000+ | 17.99 EUR |
AS4C32M16SB-7TINTR |
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns; reel
Operating temperature: -40...85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: reel
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
Anzahl je Verpackung: 1000 Stücke
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns; reel
Operating temperature: -40...85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 8Mx16bitx4
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: reel
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
AS4C32M16SC-7TIN |
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 3.3V; 133MHz; 5.4ns; TSOP54 II; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 133MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 3.3V; 133MHz; 5.4ns; TSOP54 II; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 133MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
Produkt ist nicht verfügbar
AS4C32M16SC-7TINTR |
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 3.3V; 133MHz; 5.4ns; TSOP54 II; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 133MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 3.3V; 133MHz; 5.4ns; TSOP54 II; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 133MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
Produkt ist nicht verfügbar
AS4C32M16SC-7TIN |
Hersteller: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C32M16SC-7TIN - DRAM, SDRAM, 512 Mbit, 32M x 16 Bit, 133 MHz, TSOP-II, 54 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: SDRAM
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: TSOP-II
Speicherdichte: 512Mbit
usEccn: EAR99
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 133MHz
Betriebstemperatur, min.: -40°C
euEccn: NLR
Anzahl der Pins: 54Pins
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 85°C
Speicherkonfiguration: 32M x 16 Bit
SVHC: To Be Advised
Description: ALLIANCE MEMORY - AS4C32M16SC-7TIN - DRAM, SDRAM, 512 Mbit, 32M x 16 Bit, 133 MHz, TSOP-II, 54 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: SDRAM
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: TSOP-II
Speicherdichte: 512Mbit
usEccn: EAR99
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 133MHz
Betriebstemperatur, min.: -40°C
euEccn: NLR
Anzahl der Pins: 54Pins
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 85°C
Speicherkonfiguration: 32M x 16 Bit
SVHC: To Be Advised
auf Bestellung 89 Stücke:
Lieferzeit 14-21 Tag (e)AS4C32M16SC-7TIN |
Hersteller: Alliance Memory
DRAM 512Mb 32Mx16 3.3V 143MHz SDRAM I-Temp
DRAM 512Mb 32Mx16 3.3V 143MHz SDRAM I-Temp
auf Bestellung 416 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 25.71 EUR |
10+ | 23.81 EUR |
25+ | 23.2 EUR |
108+ | 20.33 EUR |
216+ | 19.45 EUR |
540+ | 19.31 EUR |
1080+ | 18.59 EUR |
AS4C32M16SC-7TIN |
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 3.3V; 133MHz; 5.4ns; TSOP54 II; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 133MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 3.3V; 133MHz; 5.4ns; TSOP54 II; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 133MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
Produkt ist nicht verfügbar
AS4C32M16SC-7TINTR |
Hersteller: Alliance Memory
DRAM 512Mb 32Mx16 3.3V 143MHz SDRAM I-Temp
DRAM 512Mb 32Mx16 3.3V 143MHz SDRAM I-Temp
Produkt ist nicht verfügbar
AS4C32M16SC-7TINTR |
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 3.3V; 133MHz; 5.4ns; TSOP54 II; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 133MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 3.3V; 133MHz; 5.4ns; TSOP54 II; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 133MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
Produkt ist nicht verfügbar
AS4C32M16SM-7TCN |
Hersteller: Alliance Memory
DRAM 512Mb, 3.3v, 133Mhz 32M x 16 SDR
DRAM 512Mb, 3.3v, 133Mhz 32M x 16 SDR
Produkt ist nicht verfügbar
AS4C32M16SM-7TIN |
Hersteller: Alliance Memory
DRAM 512Mb, 3.3v, 133Mhz 32M x 16 SDR
DRAM 512Mb, 3.3v, 133Mhz 32M x 16 SDR
auf Bestellung 13 Stücke:
Lieferzeit 10-14 Tag (e)AS4C32M32MD1-5BCN |
Hersteller: Alliance Memory
DRAM 1G, 1.8V, 200Mhz 32M x 32 Mobile DDR
DRAM 1G, 1.8V, 200Mhz 32M x 32 Mobile DDR
auf Bestellung 51 Stücke:
Lieferzeit 10-14 Tag (e)AS4C32M32MD1-5BCNTR |
Hersteller: Alliance Memory
DRAM 1G, 1.8V, 200Mhz 32M x 32 Mobile DDR
DRAM 1G, 1.8V, 200Mhz 32M x 32 Mobile DDR
Produkt ist nicht verfügbar
AS4C32M32MD1-5BIN |
Hersteller: Alliance Memory
DRAM 1G, 1.8V, 200Mhz 32M x 32 Mobile DDR
DRAM 1G, 1.8V, 200Mhz 32M x 32 Mobile DDR
auf Bestellung 317 Stücke:
Lieferzeit 10-14 Tag (e)