Produkte > ALLIANCE MEMORY > Alle Produkte des Herstellers ALLIANCE MEMORY (3567) > Seite 17 nach 60
Foto | Bezeichnung | Hersteller | Beschreibung |
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AS4C4M16SA-6TANTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP54 II; reel Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bit Clock frequency: 166MHz Access time: 5.4ns Case: TSOP54 II Memory capacity: 64Mb Mounting: SMD Operating temperature: -40...105°C Kind of package: reel Operating voltage: 3.3V |
Produkt ist nicht verfügbar |
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AS4C4M16SA-6TCN | Alliance Memory | DRAM |
auf Bestellung 133 Stücke: Lieferzeit 14-28 Tag (e) |
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AS4C4M16SA-6TCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP54 II; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bit Clock frequency: 166MHz Access time: 5.4ns Case: TSOP54 II Memory capacity: 64Mb Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 3.3V |
auf Bestellung 126 Stücke: Lieferzeit 7-14 Tag (e) |
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AS4C4M16SA-6TCNTR | Alliance Memory | DRAM |
auf Bestellung 781 Stücke: Lieferzeit 14-28 Tag (e) |
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AS4C4M16SA-6TCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP54 II; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bit Clock frequency: 166MHz Access time: 5.4ns Case: TSOP54 II Memory capacity: 64Mb Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel Operating voltage: 3.3V |
Produkt ist nicht verfügbar |
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AS4C4M16SA-6TIN | Alliance Memory | DRAM |
auf Bestellung 3100 Stücke: Lieferzeit 14-28 Tag (e) |
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AS4C4M16SA-6TIN | ALLIANCE MEMORY |
Description: ALLIANCE MEMORY - AS4C4M16SA-6TIN - DRAM, SDRAM, 64 Mbit, 4M x 16 Bit, 166 MHz, TSOP-II, 54 Pin(s) tariffCode: 85423231 productTraceability: No rohsCompliant: YES Versorgungsspannung, nom.: 3.3V Taktfrequenz, max.: 166MHz Anzahl der Pins: 54Pin(s) euEccn: NLR Speicherdichte: 64Mbit hazardous: false rohsPhthalatesCompliant: YES Betriebstemperatur, min.: -40°C Betriebstemperatur, max.: 85°C usEccn: EAR99 |
auf Bestellung 96 Stücke: Lieferzeit 14-21 Tag (e) |
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AS4C4M16SA-6TINTR | Alliance Memory | DRAM |
auf Bestellung 875 Stücke: Lieferzeit 14-28 Tag (e) |
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AS4C4M16SA-6TINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx16bit; 3.3V; 166MHz; 6ns; TSOP54 II; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bit Clock frequency: 166MHz Access time: 6ns Case: TSOP54 II Memory capacity: 64Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel Operating voltage: 3.3V |
auf Bestellung 3757 Stücke: Lieferzeit 7-14 Tag (e) |
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AS4C4M16SA-7B2CN | Alliance Memory | DRAM 64M 3.3V 143MHz 4M x 16 SDRAM |
auf Bestellung 117 Stücke: Lieferzeit 14-28 Tag (e) |
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AS4C4M16SA-7B2CN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx16bit; 3.3V; 143MHz; 5.4s; FBGA60; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bit Clock frequency: 143MHz Access time: 5.4s Case: FBGA60 Memory capacity: 64Mb Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray Operating voltage: 3.3V |
Produkt ist nicht verfügbar |
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AS4C4M16SA-7B2CNTR | Alliance Memory | DRAM 64M 3.3V 143MHz 4M x 16 SDRAM |
Produkt ist nicht verfügbar |
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AS4C4M16SA-7B2CNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx16bit; 3.3V; 143MHz; 5.4s; FBGA60; 0÷70°C; reel Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bit Clock frequency: 143MHz Access time: 5.4s Case: FBGA60 Memory capacity: 64Mb Mounting: SMD Operating temperature: 0...70°C Kind of package: reel Operating voltage: 3.3V |
Produkt ist nicht verfügbar |
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AS4C4M16SA-7BCN | Alliance Memory | DRAM |
auf Bestellung 175 Stücke: Lieferzeit 14-28 Tag (e) |
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AS4C4M16SA-7BCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx16bit; 3.3V; 143MHz; 5.4s; FBGA54; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bit Clock frequency: 143MHz Access time: 5.4s Case: FBGA54 Memory capacity: 64Mb Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray Operating voltage: 3.3V |
Produkt ist nicht verfügbar |
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AS4C4M16SA-7BCN | Alliance Memory | Синхронна динамічна пам'ять SDRAM; Uживл, В = 3,0...3,6; Інтерфейс = Паралельний; Об. пам. = 64 Мбіт; Орг. пам. = 4М х 16; Тдост/Частота = 143 МГц; Тексп, °С = 0...+70; TFBGA-54 |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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AS4C4M16SA-7BCNTR | Alliance Memory | DRAM |
Produkt ist nicht verfügbar |
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AS4C4M16SA-7BCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx16bit; 3.3V; 143MHz; 5.4s; FBGA54; 0÷70°C; reel Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bit Clock frequency: 143MHz Access time: 5.4s Case: FBGA54 Memory capacity: 64Mb Mounting: SMD Operating temperature: 0...70°C Kind of package: reel Operating voltage: 3.3V |
Produkt ist nicht verfügbar |
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AS4C4M16SA-7TCN | Alliance Memory | DRAM |
auf Bestellung 2665 Stücke: Lieferzeit 14-28 Tag (e) |
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AS4C4M16SA-7TCN | ALLIANCE MEMORY |
Description: ALLIANCE MEMORY - AS4C4M16SA-7TCN - DRAM, SDRAM, 64 Mbit, 4M x 16 Bit, 143 MHz, TSOP-II, 54 Pin(s) tariffCode: 85423231 productTraceability: No rohsCompliant: YES Versorgungsspannung, nom.: 3.3V Taktfrequenz, max.: 143MHz Anzahl der Pins: 54Pin(s) euEccn: NLR Speicherdichte: 64Mbit hazardous: false rohsPhthalatesCompliant: YES Betriebstemperatur, min.: 0°C Betriebstemperatur, max.: 70°C usEccn: EAR99 |
auf Bestellung 103 Stücke: Lieferzeit 14-21 Tag (e) |
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AS4C4M16SA-7TCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx16bit; 3.3V; 143MHz; 5.4s; TSOP54 II; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bit Clock frequency: 143MHz Access time: 5.4s Case: TSOP54 II Memory capacity: 64Mb Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 3.3V |
auf Bestellung 5384 Stücke: Lieferzeit 7-14 Tag (e) |
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AS4C4M16SA-7TCNTR | Alliance Memory | DRAM |
auf Bestellung 30 Stücke: Lieferzeit 14-28 Tag (e) |
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AS4C4M16SA-7TCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx16bit; 3.3V; 143MHz; 7ns; TSOP54 II; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bit Clock frequency: 143MHz Access time: 7ns Case: TSOP54 II Memory capacity: 64Mb Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel Operating voltage: 3.3V |
auf Bestellung 1431 Stücke: Lieferzeit 7-14 Tag (e) |
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AS4C4M16SB-6TIN | Alliance Memory | DRAM SDRAM, 64Mb, 4M x 16, 3.3V, 54pin TSOP II, 166 Mhz, industrial temp - Tray |
auf Bestellung 3407 Stücke: Lieferzeit 14-28 Tag (e) |
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AS4C4M32D1A-5BCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 2.5V; 200MHz; 15ns; BGA144 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 128Mb DRAM Memory organisation: 4Mx32bit Clock frequency: 200MHz Access time: 15ns Case: BGA144 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 2.5V |
Produkt ist nicht verfügbar |
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AS4C4M32D1A-5BCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 2.5V; 200MHz; 15ns; BGA144 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 128Mb DRAM Memory organisation: 4Mx32bit Clock frequency: 200MHz Access time: 15ns Case: BGA144 Mounting: SMD Operating temperature: 0...70°C Kind of package: reel Operating voltage: 2.5V |
Produkt ist nicht verfügbar |
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AS4C4M32D1A-5BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 2.5V; 200MHz; 15ns; BGA144 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 128Mb DRAM Memory organisation: 4Mx32bit Clock frequency: 200MHz Access time: 15ns Case: BGA144 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 2.5V |
Produkt ist nicht verfügbar |
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AS4C4M32D1A-5BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 2.5V; 200MHz; 15ns; BGA144 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 128Mb DRAM Memory organisation: 4Mx32bit Clock frequency: 200MHz Access time: 15ns Case: BGA144 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel Operating voltage: 2.5V |
Produkt ist nicht verfügbar |
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AS4C4M32D1A-5BCN | Alliance Memory | DRAM DDR1, 128M, 2.5V 200MHz,4M x 32 |
Produkt ist nicht verfügbar |
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AS4C4M32D1A-5BCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 2.5V; 200MHz; 15ns; BGA144 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 128Mb DRAM Memory organisation: 4Mx32bit Clock frequency: 200MHz Access time: 15ns Case: BGA144 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 2.5V Anzahl je Verpackung: 189 Stücke |
Produkt ist nicht verfügbar |
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AS4C4M32D1A-5BCNTR | Alliance Memory | DRAM DDR1, 128M, 2.5V 200MHz,4M x 32 |
Produkt ist nicht verfügbar |
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AS4C4M32D1A-5BCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 2.5V; 200MHz; 15ns; BGA144 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 128Mb DRAM Memory organisation: 4Mx32bit Clock frequency: 200MHz Access time: 15ns Case: BGA144 Mounting: SMD Operating temperature: 0...70°C Kind of package: reel Operating voltage: 2.5V Anzahl je Verpackung: 1500 Stücke |
Produkt ist nicht verfügbar |
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AS4C4M32D1A-5BIN | Alliance Memory | DRAM DDR1, 128M, 2.5V 200MHz,4M x 32 |
auf Bestellung 30 Stücke: Lieferzeit 14-28 Tag (e) |
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AS4C4M32D1A-5BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 2.5V; 200MHz; 15ns; BGA144 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 128Mb DRAM Memory organisation: 4Mx32bit Clock frequency: 200MHz Access time: 15ns Case: BGA144 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 2.5V Anzahl je Verpackung: 189 Stücke |
Produkt ist nicht verfügbar |
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AS4C4M32D1A-5BINTR | Alliance Memory | DRAM DDR1, 128M, 2.5V 200MHz,4M x 32 |
Produkt ist nicht verfügbar |
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AS4C4M32D1A-5BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 2.5V; 200MHz; 15ns; BGA144 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 128Mb DRAM Memory organisation: 4Mx32bit Clock frequency: 200MHz Access time: 15ns Case: BGA144 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel Operating voltage: 2.5V Anzahl je Verpackung: 1500 Stücke |
Produkt ist nicht verfügbar |
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AS4C4M32MSA-6BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx32bit; 1.7V; 166MHz; 5.5ns; FBGA90; -40÷85°C Case: FBGA90 Operating temperature: -40...85°C Mounting: SMD Access time: 5.5ns Kind of package: in-tray Kind of memory: DDR1; SDRAM Kind of interface: parallel Memory capacity: 128Mb Clock frequency: 166MHz Operating voltage: 1.7V Type of integrated circuit: DRAM memory Memory organisation: 4Mx32bit |
Produkt ist nicht verfügbar |
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AS4C4M32MSA-6BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx32bit; 1.7V; 166MHz; 5.5ns; FBGA90; -40÷85°C Case: FBGA90 Operating temperature: -40...85°C Mounting: SMD Access time: 5.5ns Kind of package: in-tray Kind of memory: DDR1; SDRAM Kind of interface: parallel Memory capacity: 128Mb Clock frequency: 166MHz Operating voltage: 1.7V Type of integrated circuit: DRAM memory Memory organisation: 4Mx32bit |
Produkt ist nicht verfügbar |
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AS4C4M32MSA-6BIN | Alliance Memory | DRAM 128M 166MHz 4Mx32 Mobile LP SDRAM IT |
Produkt ist nicht verfügbar |
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AS4C4M32MSA-6BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx32bit; 1.7V; 166MHz; 5.5ns; FBGA90; -40÷85°C Case: FBGA90 Operating temperature: -40...85°C Mounting: SMD Access time: 5.5ns Kind of package: in-tray Kind of memory: DDR1; SDRAM Kind of interface: parallel Memory capacity: 128Mb Clock frequency: 166MHz Operating voltage: 1.7V Type of integrated circuit: DRAM memory Memory organisation: 4Mx32bit |
Produkt ist nicht verfügbar |
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AS4C4M32MSA-6BINTR | Alliance Memory | DRAM 128M 166MHz 4Mx32 Mobile LP SDRAM IT |
Produkt ist nicht verfügbar |
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AS4C4M32MSA-6BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx32bit; 1.7V; 166MHz; 5.5ns; FBGA90; -40÷85°C Case: FBGA90 Operating temperature: -40...85°C Mounting: SMD Access time: 5.5ns Kind of package: in-tray Kind of memory: DDR1; SDRAM Kind of interface: parallel Memory capacity: 128Mb Clock frequency: 166MHz Operating voltage: 1.7V Type of integrated circuit: DRAM memory Memory organisation: 4Mx32bit |
Produkt ist nicht verfügbar |
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AS4C4M32S-6BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx32bit; 3÷3.6V; 166MHz; 6.5ns; TFBGA90; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx32bit Clock frequency: 166MHz Access time: 6.5ns Case: TFBGA90 Memory capacity: 128Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Operating voltage: 3...3.6V |
Produkt ist nicht verfügbar |
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AS4C4M32S-6BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1Mx32bitx4; 3.3V; 166MHz; 5.4ns; FBGA90; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 1Mx32bitx4 Clock frequency: 166MHz Access time: 5.4ns Case: FBGA90 Memory capacity: 128Mb Mounting: SMD Operating temperature: -40...85°C Kind of package: reel Operating voltage: 3.3V |
Produkt ist nicht verfügbar |
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AS4C4M32S-7BCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx32bit; 3÷3.6V; 143MHz; 6.5ns; TFBGA90; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx32bit Clock frequency: 143MHz Access time: 6.5ns Case: TFBGA90 Memory capacity: 128Mb Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Operating voltage: 3...3.6V |
Produkt ist nicht verfügbar |
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AS4C4M32S-7BCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1Mx32bitx4; 3.3V; 143MHz; 5.4ns; FBGA90; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 1Mx32bitx4 Clock frequency: 143MHz Access time: 5.4ns Case: FBGA90 Memory capacity: 128Mb Mounting: SMD Operating temperature: 0...70°C Kind of package: reel Operating voltage: 3.3V |
Produkt ist nicht verfügbar |
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AS4C4M32S-6BCN | Alliance Memory | DRAM |
Produkt ist nicht verfügbar |
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AS4C4M32S-6BIN | Alliance Memory | DRAM 128M, 3.3V, 4M x 32 SDRAM |
auf Bestellung 1206 Stücke: Lieferzeit 14-28 Tag (e) |
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AS4C4M32S-6BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx32bit; 3÷3.6V; 166MHz; 6.5ns; TFBGA90; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx32bit Clock frequency: 166MHz Access time: 6.5ns Case: TFBGA90 Memory capacity: 128Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Operating voltage: 3...3.6V |
Produkt ist nicht verfügbar |
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AS4C4M32S-6BIN | Alliance Memory | Синхронна динамічна енергозалежна пам'ять SDRAM; Uживл, В = 3,0...3.6; Об'єм RAM = 128 Кбайт; Орг. пам. = 4М х 32; Тдост/Частота = 166 МГц; Тексп, °C = -40...+85; Тип інтерф. = Паралельний; TFBGA-90 |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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AS4C4M32S-6BINTR | Alliance Memory | DRAM 128M, 3.3V, 4M x 32 SDRAM |
Produkt ist nicht verfügbar |
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AS4C4M32S-6BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1Mx32bitx4; 3.3V; 166MHz; 5.4ns; FBGA90; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 1Mx32bitx4 Clock frequency: 166MHz Access time: 5.4ns Case: FBGA90 Memory capacity: 128Mb Mounting: SMD Operating temperature: -40...85°C Kind of package: reel Operating voltage: 3.3V |
Produkt ist nicht verfügbar |
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AS4C4M32S-7BCN | Alliance Memory | DRAM 128Mb, 3.3V, 143Mhz 4M x 32 SDRAM |
auf Bestellung 327 Stücke: Lieferzeit 14-28 Tag (e) |
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AS4C4M32S-7BCN | ALLIANCE MEMORY |
Description: ALLIANCE MEMORY - AS4C4M32S-7BCN - DRAM, SDRAM, 128 Mbit, 4M x 32 Bit, 143 MHz, TFBGA, 90 Pin(s) tariffCode: 85423231 productTraceability: No rohsCompliant: YES Versorgungsspannung, nom.: 3.3V Taktfrequenz, max.: 143MHz Anzahl der Pins: 90Pin(s) euEccn: NLR Speicherdichte: 128Mbit hazardous: false rohsPhthalatesCompliant: YES Betriebstemperatur, min.: 0°C Betriebstemperatur, max.: 70°C usEccn: EAR99 |
auf Bestellung 190 Stücke: Lieferzeit 14-21 Tag (e) |
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AS4C4M32S-7BCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx32bit; 3÷3.6V; 143MHz; 6.5ns; TFBGA90; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx32bit Clock frequency: 143MHz Access time: 6.5ns Case: TFBGA90 Memory capacity: 128Mb Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Operating voltage: 3...3.6V |
Produkt ist nicht verfügbar |
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AS4C4M32S-7BCNTR | Alliance Memory | DRAM 128Mb, 3.3V, 143Mhz 4M x 32 SDRAM |
Produkt ist nicht verfügbar |
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AS4C4M32S-7BCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1Mx32bitx4; 3.3V; 143MHz; 5.4ns; FBGA90; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 1Mx32bitx4 Clock frequency: 143MHz Access time: 5.4ns Case: FBGA90 Memory capacity: 128Mb Mounting: SMD Operating temperature: 0...70°C Kind of package: reel Operating voltage: 3.3V |
Produkt ist nicht verfügbar |
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AS4C4M32S-7TCN | Alliance Memory | DRAM 128Mb, 3.3V, 143Mhz 4M x 32 SDRAM |
auf Bestellung 421 Stücke: Lieferzeit 14-28 Tag (e) |
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AS4C4M32SA-6TCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1Mx32bitx4; 3.3V; 166MHz; 5.4ns; TSOP86; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 1Mx32bitx4 Clock frequency: 166MHz Access time: 5.4ns Case: TSOP86 Memory capacity: 128Mb Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 3.3V |
auf Bestellung 63 Stücke: Lieferzeit 14-21 Tag (e) |
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AS4C4M32SA-6TCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1Mx32bitx4; 3.3V; 166MHz; 5.4ns; TSOP86; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 1Mx32bitx4 Clock frequency: 166MHz Access time: 5.4ns Case: TSOP86 Memory capacity: 128Mb Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel Operating voltage: 3.3V |
Produkt ist nicht verfügbar |
AS4C4M16SA-6TANTR |
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP54 II; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP54 II; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel
Operating voltage: 3.3V
Produkt ist nicht verfügbar
AS4C4M16SA-6TCN |
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
auf Bestellung 126 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
19+ | 3.88 EUR |
21+ | 3.45 EUR |
26+ | 2.85 EUR |
27+ | 2.69 EUR |
108+ | 2.6 EUR |
AS4C4M16SA-6TCNTR |
Hersteller: Alliance Memory
DRAM
DRAM
auf Bestellung 781 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 7.85 EUR |
10+ | 7.07 EUR |
25+ | 6.94 EUR |
100+ | 6.19 EUR |
250+ | 5.98 EUR |
500+ | 5.95 EUR |
1000+ | 5.51 EUR |
AS4C4M16SA-6TCNTR |
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
Produkt ist nicht verfügbar
AS4C4M16SA-6TIN |
Hersteller: Alliance Memory
DRAM
DRAM
auf Bestellung 3100 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 8.42 EUR |
10+ | 7.57 EUR |
25+ | 7.46 EUR |
108+ | 6.32 EUR |
216+ | 5.8 EUR |
540+ | 5.56 EUR |
1080+ | 5.51 EUR |
AS4C4M16SA-6TIN |
Hersteller: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C4M16SA-6TIN - DRAM, SDRAM, 64 Mbit, 4M x 16 Bit, 166 MHz, TSOP-II, 54 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 166MHz
Anzahl der Pins: 54Pin(s)
euEccn: NLR
Speicherdichte: 64Mbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: -40°C
Betriebstemperatur, max.: 85°C
usEccn: EAR99
Description: ALLIANCE MEMORY - AS4C4M16SA-6TIN - DRAM, SDRAM, 64 Mbit, 4M x 16 Bit, 166 MHz, TSOP-II, 54 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 166MHz
Anzahl der Pins: 54Pin(s)
euEccn: NLR
Speicherdichte: 64Mbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: -40°C
Betriebstemperatur, max.: 85°C
usEccn: EAR99
auf Bestellung 96 Stücke:
Lieferzeit 14-21 Tag (e)AS4C4M16SA-6TINTR |
Hersteller: Alliance Memory
DRAM
DRAM
auf Bestellung 875 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 8.4 EUR |
10+ | 7.62 EUR |
25+ | 7.46 EUR |
50+ | 7.44 EUR |
100+ | 6.66 EUR |
250+ | 6.63 EUR |
500+ | 6.37 EUR |
AS4C4M16SA-6TINTR |
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 166MHz; 6ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP54 II
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 166MHz; 6ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP54 II
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
auf Bestellung 3757 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
17+ | 4.42 EUR |
18+ | 4.2 EUR |
25+ | 2.89 EUR |
27+ | 2.73 EUR |
AS4C4M16SA-7B2CN |
Hersteller: Alliance Memory
DRAM 64M 3.3V 143MHz 4M x 16 SDRAM
DRAM 64M 3.3V 143MHz 4M x 16 SDRAM
auf Bestellung 117 Stücke:
Lieferzeit 14-28 Tag (e)AS4C4M16SA-7B2CN |
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 143MHz; 5.4s; FBGA60; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 143MHz
Access time: 5.4s
Case: FBGA60
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 143MHz; 5.4s; FBGA60; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 143MHz
Access time: 5.4s
Case: FBGA60
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Operating voltage: 3.3V
Produkt ist nicht verfügbar
AS4C4M16SA-7B2CNTR |
Hersteller: Alliance Memory
DRAM 64M 3.3V 143MHz 4M x 16 SDRAM
DRAM 64M 3.3V 143MHz 4M x 16 SDRAM
Produkt ist nicht verfügbar
AS4C4M16SA-7B2CNTR |
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 143MHz; 5.4s; FBGA60; 0÷70°C; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 143MHz
Access time: 5.4s
Case: FBGA60
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 143MHz; 5.4s; FBGA60; 0÷70°C; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 143MHz
Access time: 5.4s
Case: FBGA60
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 3.3V
Produkt ist nicht verfügbar
AS4C4M16SA-7BCN |
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 143MHz; 5.4s; FBGA54; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 143MHz
Access time: 5.4s
Case: FBGA54
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 143MHz; 5.4s; FBGA54; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 143MHz
Access time: 5.4s
Case: FBGA54
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Operating voltage: 3.3V
Produkt ist nicht verfügbar
AS4C4M16SA-7BCN |
Hersteller: Alliance Memory
Синхронна динамічна пам'ять SDRAM; Uживл, В = 3,0...3,6; Інтерфейс = Паралельний; Об. пам. = 64 Мбіт; Орг. пам. = 4М х 16; Тдост/Частота = 143 МГц; Тексп, °С = 0...+70; TFBGA-54
Синхронна динамічна пам'ять SDRAM; Uживл, В = 3,0...3,6; Інтерфейс = Паралельний; Об. пам. = 64 Мбіт; Орг. пам. = 4М х 16; Тдост/Частота = 143 МГц; Тексп, °С = 0...+70; TFBGA-54
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 6.76 EUR |
AS4C4M16SA-7BCNTR |
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 143MHz; 5.4s; FBGA54; 0÷70°C; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 143MHz
Access time: 5.4s
Case: FBGA54
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 143MHz; 5.4s; FBGA54; 0÷70°C; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 143MHz
Access time: 5.4s
Case: FBGA54
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 3.3V
Produkt ist nicht verfügbar
AS4C4M16SA-7TCN |
Hersteller: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C4M16SA-7TCN - DRAM, SDRAM, 64 Mbit, 4M x 16 Bit, 143 MHz, TSOP-II, 54 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 143MHz
Anzahl der Pins: 54Pin(s)
euEccn: NLR
Speicherdichte: 64Mbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: 0°C
Betriebstemperatur, max.: 70°C
usEccn: EAR99
Description: ALLIANCE MEMORY - AS4C4M16SA-7TCN - DRAM, SDRAM, 64 Mbit, 4M x 16 Bit, 143 MHz, TSOP-II, 54 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 143MHz
Anzahl der Pins: 54Pin(s)
euEccn: NLR
Speicherdichte: 64Mbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: 0°C
Betriebstemperatur, max.: 70°C
usEccn: EAR99
auf Bestellung 103 Stücke:
Lieferzeit 14-21 Tag (e)AS4C4M16SA-7TCN |
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 143MHz; 5.4s; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 143MHz
Access time: 5.4s
Case: TSOP54 II
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 143MHz; 5.4s; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 143MHz
Access time: 5.4s
Case: TSOP54 II
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
auf Bestellung 5384 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
18+ | 4 EUR |
20+ | 3.73 EUR |
28+ | 2.56 EUR |
30+ | 2.43 EUR |
216+ | 2.4 EUR |
AS4C4M16SA-7TCNTR |
Hersteller: Alliance Memory
DRAM
DRAM
auf Bestellung 30 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 7.85 EUR |
10+ | 7.07 EUR |
25+ | 6.94 EUR |
100+ | 6.19 EUR |
250+ | 5.98 EUR |
500+ | 5.95 EUR |
1000+ | 5.46 EUR |
AS4C4M16SA-7TCNTR |
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 143MHz; 7ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 143MHz; 7ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
auf Bestellung 1431 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
18+ | 4.1 EUR |
19+ | 3.79 EUR |
28+ | 2.6 EUR |
30+ | 2.46 EUR |
AS4C4M16SB-6TIN |
Hersteller: Alliance Memory
DRAM SDRAM, 64Mb, 4M x 16, 3.3V, 54pin TSOP II, 166 Mhz, industrial temp - Tray
DRAM SDRAM, 64Mb, 4M x 16, 3.3V, 54pin TSOP II, 166 Mhz, industrial temp - Tray
auf Bestellung 3407 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 7.67 EUR |
10+ | 6.89 EUR |
108+ | 6.16 EUR |
5076+ | 5.38 EUR |
10044+ | 5.3 EUR |
25056+ | 5.23 EUR |
AS4C4M32D1A-5BCN |
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 2.5V; 200MHz; 15ns; BGA144
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 4Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: BGA144
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 2.5V; 200MHz; 15ns; BGA144
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 4Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: BGA144
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
Produkt ist nicht verfügbar
AS4C4M32D1A-5BCNTR |
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 2.5V; 200MHz; 15ns; BGA144
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 4Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: BGA144
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 2.5V; 200MHz; 15ns; BGA144
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 4Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: BGA144
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 2.5V
Produkt ist nicht verfügbar
AS4C4M32D1A-5BIN |
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 2.5V; 200MHz; 15ns; BGA144
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 4Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: BGA144
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 2.5V; 200MHz; 15ns; BGA144
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 4Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: BGA144
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
Produkt ist nicht verfügbar
AS4C4M32D1A-5BINTR |
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 2.5V; 200MHz; 15ns; BGA144
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 4Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: BGA144
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 2.5V; 200MHz; 15ns; BGA144
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 4Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: BGA144
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 2.5V
Produkt ist nicht verfügbar
AS4C4M32D1A-5BCN |
Hersteller: Alliance Memory
DRAM DDR1, 128M, 2.5V 200MHz,4M x 32
DRAM DDR1, 128M, 2.5V 200MHz,4M x 32
Produkt ist nicht verfügbar
AS4C4M32D1A-5BCN |
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 2.5V; 200MHz; 15ns; BGA144
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 4Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: BGA144
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
Anzahl je Verpackung: 189 Stücke
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 2.5V; 200MHz; 15ns; BGA144
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 4Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: BGA144
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
Anzahl je Verpackung: 189 Stücke
Produkt ist nicht verfügbar
AS4C4M32D1A-5BCNTR |
Hersteller: Alliance Memory
DRAM DDR1, 128M, 2.5V 200MHz,4M x 32
DRAM DDR1, 128M, 2.5V 200MHz,4M x 32
Produkt ist nicht verfügbar
AS4C4M32D1A-5BCNTR |
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 2.5V; 200MHz; 15ns; BGA144
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 4Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: BGA144
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 2.5V
Anzahl je Verpackung: 1500 Stücke
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 2.5V; 200MHz; 15ns; BGA144
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 4Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: BGA144
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 2.5V
Anzahl je Verpackung: 1500 Stücke
Produkt ist nicht verfügbar
AS4C4M32D1A-5BIN |
Hersteller: Alliance Memory
DRAM DDR1, 128M, 2.5V 200MHz,4M x 32
DRAM DDR1, 128M, 2.5V 200MHz,4M x 32
auf Bestellung 30 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 13.42 EUR |
10+ | 12.17 EUR |
25+ | 11.83 EUR |
50+ | 10.66 EUR |
100+ | 10.53 EUR |
189+ | 9.49 EUR |
567+ | 8.71 EUR |
AS4C4M32D1A-5BIN |
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 2.5V; 200MHz; 15ns; BGA144
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 4Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: BGA144
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
Anzahl je Verpackung: 189 Stücke
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 2.5V; 200MHz; 15ns; BGA144
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 4Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: BGA144
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
Anzahl je Verpackung: 189 Stücke
Produkt ist nicht verfügbar
AS4C4M32D1A-5BINTR |
Hersteller: Alliance Memory
DRAM DDR1, 128M, 2.5V 200MHz,4M x 32
DRAM DDR1, 128M, 2.5V 200MHz,4M x 32
Produkt ist nicht verfügbar
AS4C4M32D1A-5BINTR |
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 2.5V; 200MHz; 15ns; BGA144
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 4Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: BGA144
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 2.5V
Anzahl je Verpackung: 1500 Stücke
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 2.5V; 200MHz; 15ns; BGA144
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 4Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: BGA144
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 2.5V
Anzahl je Verpackung: 1500 Stücke
Produkt ist nicht verfügbar
AS4C4M32MSA-6BIN |
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx32bit; 1.7V; 166MHz; 5.5ns; FBGA90; -40÷85°C
Case: FBGA90
Operating temperature: -40...85°C
Mounting: SMD
Access time: 5.5ns
Kind of package: in-tray
Kind of memory: DDR1; SDRAM
Kind of interface: parallel
Memory capacity: 128Mb
Clock frequency: 166MHz
Operating voltage: 1.7V
Type of integrated circuit: DRAM memory
Memory organisation: 4Mx32bit
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx32bit; 1.7V; 166MHz; 5.5ns; FBGA90; -40÷85°C
Case: FBGA90
Operating temperature: -40...85°C
Mounting: SMD
Access time: 5.5ns
Kind of package: in-tray
Kind of memory: DDR1; SDRAM
Kind of interface: parallel
Memory capacity: 128Mb
Clock frequency: 166MHz
Operating voltage: 1.7V
Type of integrated circuit: DRAM memory
Memory organisation: 4Mx32bit
Produkt ist nicht verfügbar
AS4C4M32MSA-6BINTR |
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx32bit; 1.7V; 166MHz; 5.5ns; FBGA90; -40÷85°C
Case: FBGA90
Operating temperature: -40...85°C
Mounting: SMD
Access time: 5.5ns
Kind of package: in-tray
Kind of memory: DDR1; SDRAM
Kind of interface: parallel
Memory capacity: 128Mb
Clock frequency: 166MHz
Operating voltage: 1.7V
Type of integrated circuit: DRAM memory
Memory organisation: 4Mx32bit
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx32bit; 1.7V; 166MHz; 5.5ns; FBGA90; -40÷85°C
Case: FBGA90
Operating temperature: -40...85°C
Mounting: SMD
Access time: 5.5ns
Kind of package: in-tray
Kind of memory: DDR1; SDRAM
Kind of interface: parallel
Memory capacity: 128Mb
Clock frequency: 166MHz
Operating voltage: 1.7V
Type of integrated circuit: DRAM memory
Memory organisation: 4Mx32bit
Produkt ist nicht verfügbar
AS4C4M32MSA-6BIN |
Hersteller: Alliance Memory
DRAM 128M 166MHz 4Mx32 Mobile LP SDRAM IT
DRAM 128M 166MHz 4Mx32 Mobile LP SDRAM IT
Produkt ist nicht verfügbar
AS4C4M32MSA-6BIN |
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx32bit; 1.7V; 166MHz; 5.5ns; FBGA90; -40÷85°C
Case: FBGA90
Operating temperature: -40...85°C
Mounting: SMD
Access time: 5.5ns
Kind of package: in-tray
Kind of memory: DDR1; SDRAM
Kind of interface: parallel
Memory capacity: 128Mb
Clock frequency: 166MHz
Operating voltage: 1.7V
Type of integrated circuit: DRAM memory
Memory organisation: 4Mx32bit
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx32bit; 1.7V; 166MHz; 5.5ns; FBGA90; -40÷85°C
Case: FBGA90
Operating temperature: -40...85°C
Mounting: SMD
Access time: 5.5ns
Kind of package: in-tray
Kind of memory: DDR1; SDRAM
Kind of interface: parallel
Memory capacity: 128Mb
Clock frequency: 166MHz
Operating voltage: 1.7V
Type of integrated circuit: DRAM memory
Memory organisation: 4Mx32bit
Produkt ist nicht verfügbar
AS4C4M32MSA-6BINTR |
Hersteller: Alliance Memory
DRAM 128M 166MHz 4Mx32 Mobile LP SDRAM IT
DRAM 128M 166MHz 4Mx32 Mobile LP SDRAM IT
Produkt ist nicht verfügbar
AS4C4M32MSA-6BINTR |
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx32bit; 1.7V; 166MHz; 5.5ns; FBGA90; -40÷85°C
Case: FBGA90
Operating temperature: -40...85°C
Mounting: SMD
Access time: 5.5ns
Kind of package: in-tray
Kind of memory: DDR1; SDRAM
Kind of interface: parallel
Memory capacity: 128Mb
Clock frequency: 166MHz
Operating voltage: 1.7V
Type of integrated circuit: DRAM memory
Memory organisation: 4Mx32bit
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx32bit; 1.7V; 166MHz; 5.5ns; FBGA90; -40÷85°C
Case: FBGA90
Operating temperature: -40...85°C
Mounting: SMD
Access time: 5.5ns
Kind of package: in-tray
Kind of memory: DDR1; SDRAM
Kind of interface: parallel
Memory capacity: 128Mb
Clock frequency: 166MHz
Operating voltage: 1.7V
Type of integrated circuit: DRAM memory
Memory organisation: 4Mx32bit
Produkt ist nicht verfügbar
AS4C4M32S-6BIN |
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx32bit; 3÷3.6V; 166MHz; 6.5ns; TFBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx32bit
Clock frequency: 166MHz
Access time: 6.5ns
Case: TFBGA90
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 3...3.6V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx32bit; 3÷3.6V; 166MHz; 6.5ns; TFBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx32bit
Clock frequency: 166MHz
Access time: 6.5ns
Case: TFBGA90
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 3...3.6V
Produkt ist nicht verfügbar
AS4C4M32S-6BINTR |
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx32bitx4; 3.3V; 166MHz; 5.4ns; FBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA90
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx32bitx4; 3.3V; 166MHz; 5.4ns; FBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA90
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 3.3V
Produkt ist nicht verfügbar
AS4C4M32S-7BCN |
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx32bit; 3÷3.6V; 143MHz; 6.5ns; TFBGA90; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx32bit
Clock frequency: 143MHz
Access time: 6.5ns
Case: TFBGA90
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Operating voltage: 3...3.6V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx32bit; 3÷3.6V; 143MHz; 6.5ns; TFBGA90; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx32bit
Clock frequency: 143MHz
Access time: 6.5ns
Case: TFBGA90
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Operating voltage: 3...3.6V
Produkt ist nicht verfügbar
AS4C4M32S-7BCNTR |
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx32bitx4; 3.3V; 143MHz; 5.4ns; FBGA90; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 143MHz
Access time: 5.4ns
Case: FBGA90
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx32bitx4; 3.3V; 143MHz; 5.4ns; FBGA90; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 143MHz
Access time: 5.4ns
Case: FBGA90
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 3.3V
Produkt ist nicht verfügbar
AS4C4M32S-6BIN |
Hersteller: Alliance Memory
DRAM 128M, 3.3V, 4M x 32 SDRAM
DRAM 128M, 3.3V, 4M x 32 SDRAM
auf Bestellung 1206 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 14.46 EUR |
10+ | 13.21 EUR |
25+ | 12.84 EUR |
100+ | 12.53 EUR |
190+ | 10.63 EUR |
570+ | 10.14 EUR |
AS4C4M32S-6BIN |
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx32bit; 3÷3.6V; 166MHz; 6.5ns; TFBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx32bit
Clock frequency: 166MHz
Access time: 6.5ns
Case: TFBGA90
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 3...3.6V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx32bit; 3÷3.6V; 166MHz; 6.5ns; TFBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx32bit
Clock frequency: 166MHz
Access time: 6.5ns
Case: TFBGA90
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 3...3.6V
Produkt ist nicht verfügbar
AS4C4M32S-6BIN |
Hersteller: Alliance Memory
Синхронна динамічна енергозалежна пам'ять SDRAM; Uживл, В = 3,0...3.6; Об'єм RAM = 128 Кбайт; Орг. пам. = 4М х 32; Тдост/Частота = 166 МГц; Тексп, °C = -40...+85; Тип інтерф. = Паралельний; TFBGA-90
Синхронна динамічна енергозалежна пам'ять SDRAM; Uживл, В = 3,0...3.6; Об'єм RAM = 128 Кбайт; Орг. пам. = 4М х 32; Тдост/Частота = 166 МГц; Тексп, °C = -40...+85; Тип інтерф. = Паралельний; TFBGA-90
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 22.3 EUR |
10+ | 19.21 EUR |
100+ | 16.89 EUR |
AS4C4M32S-6BINTR |
Hersteller: Alliance Memory
DRAM 128M, 3.3V, 4M x 32 SDRAM
DRAM 128M, 3.3V, 4M x 32 SDRAM
Produkt ist nicht verfügbar
AS4C4M32S-6BINTR |
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx32bitx4; 3.3V; 166MHz; 5.4ns; FBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA90
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx32bitx4; 3.3V; 166MHz; 5.4ns; FBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA90
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 3.3V
Produkt ist nicht verfügbar
AS4C4M32S-7BCN |
Hersteller: Alliance Memory
DRAM 128Mb, 3.3V, 143Mhz 4M x 32 SDRAM
DRAM 128Mb, 3.3V, 143Mhz 4M x 32 SDRAM
auf Bestellung 327 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 12.61 EUR |
10+ | 11.41 EUR |
25+ | 11.18 EUR |
50+ | 11.13 EUR |
100+ | 9.96 EUR |
190+ | 9.93 EUR |
570+ | 9.54 EUR |
AS4C4M32S-7BCN |
Hersteller: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C4M32S-7BCN - DRAM, SDRAM, 128 Mbit, 4M x 32 Bit, 143 MHz, TFBGA, 90 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 143MHz
Anzahl der Pins: 90Pin(s)
euEccn: NLR
Speicherdichte: 128Mbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: 0°C
Betriebstemperatur, max.: 70°C
usEccn: EAR99
Description: ALLIANCE MEMORY - AS4C4M32S-7BCN - DRAM, SDRAM, 128 Mbit, 4M x 32 Bit, 143 MHz, TFBGA, 90 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 143MHz
Anzahl der Pins: 90Pin(s)
euEccn: NLR
Speicherdichte: 128Mbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: 0°C
Betriebstemperatur, max.: 70°C
usEccn: EAR99
auf Bestellung 190 Stücke:
Lieferzeit 14-21 Tag (e)AS4C4M32S-7BCN |
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx32bit; 3÷3.6V; 143MHz; 6.5ns; TFBGA90; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx32bit
Clock frequency: 143MHz
Access time: 6.5ns
Case: TFBGA90
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Operating voltage: 3...3.6V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx32bit; 3÷3.6V; 143MHz; 6.5ns; TFBGA90; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx32bit
Clock frequency: 143MHz
Access time: 6.5ns
Case: TFBGA90
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Operating voltage: 3...3.6V
Produkt ist nicht verfügbar
AS4C4M32S-7BCNTR |
Hersteller: Alliance Memory
DRAM 128Mb, 3.3V, 143Mhz 4M x 32 SDRAM
DRAM 128Mb, 3.3V, 143Mhz 4M x 32 SDRAM
Produkt ist nicht verfügbar
AS4C4M32S-7BCNTR |
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx32bitx4; 3.3V; 143MHz; 5.4ns; FBGA90; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 143MHz
Access time: 5.4ns
Case: FBGA90
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx32bitx4; 3.3V; 143MHz; 5.4ns; FBGA90; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 143MHz
Access time: 5.4ns
Case: FBGA90
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 3.3V
Produkt ist nicht verfügbar
AS4C4M32S-7TCN |
Hersteller: Alliance Memory
DRAM 128Mb, 3.3V, 143Mhz 4M x 32 SDRAM
DRAM 128Mb, 3.3V, 143Mhz 4M x 32 SDRAM
auf Bestellung 421 Stücke:
Lieferzeit 14-28 Tag (e)AS4C4M32SA-6TCN |
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx32bitx4; 3.3V; 166MHz; 5.4ns; TSOP86; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP86
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx32bitx4; 3.3V; 166MHz; 5.4ns; TSOP86; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP86
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
auf Bestellung 63 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
9+ | 8.12 EUR |
13+ | 5.59 EUR |
14+ | 5.28 EUR |
AS4C4M32SA-6TCNTR |
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx32bitx4; 3.3V; 166MHz; 5.4ns; TSOP86; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP86
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx32bitx4; 3.3V; 166MHz; 5.4ns; TSOP86; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP86
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
Produkt ist nicht verfügbar