Produkte > ALLIANCE MEMORY > Alle Produkte des Herstellers ALLIANCE MEMORY (3606) > Seite 33 nach 61
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
AS6C6416-55BINTR | ALLIANCE MEMORY | AS6C6416-55BINTR Parallel SRAM memories - integ. circ. |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C6416-55TIN | Alliance Memory | SRAM 64M 3V 55ns Low Power 4096k x 16 |
auf Bestellung 103 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
AS6C6416-55TIN | ALLIANCE MEMORY |
Description: ALLIANCE MEMORY - AS6C6416-55TIN - SRAM, Asynchron, 64 Mbit, 4M x 16 Bit, TSOP-I, 48 Pin(s), 2.7 V tariffCode: 85423245 rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Speicherdichte: 64Mbit usEccn: 3A991.b.1.a Versorgungsspannung, nom.: 3V Taktfrequenz, max.: -MHz Betriebstemperatur, min.: -40°C Versorgungsspannung, min.: 2.7V euEccn: NLR Anzahl der Pins: 48Pin(s) productTraceability: No Versorgungsspannung, max.: 3.6V Betriebstemperatur, max.: 85°C |
auf Bestellung 86 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||||
AS6C6416-55TIN | ALLIANCE MEMORY | AS6C6416-55TIN Parallel SRAM memories - integ. circ. |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C6416-55TINTR | Alliance Memory | SRAM 64M 3V 55ns Low Power 4048k x 16 |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C6416-55TINTR | ALLIANCE MEMORY | AS6C6416-55TINTR Parallel SRAM memories - integ. circ. |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C8008-55BIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 2.7÷5.7V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 8Mb SRAM Memory organisation: 1024kx8bit Access time: 55ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...5.7V |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C8008-55BINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 2.7÷5.8V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 8Mb SRAM Memory organisation: 1024kx8bit Access time: 55ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...5.8V |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C8008-55ZIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 2.7÷5.5V; 55ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 8Mb SRAM Memory organisation: 1024kx8bit Access time: 55ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC IC width: 400mils Operating voltage: 2.7...5.5V |
auf Bestellung 1359 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||
AS6C8008-55ZINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 2.7÷5.6V; 55ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 8Mb SRAM Memory organisation: 1024kx8bit Access time: 55ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC IC width: 400mils Operating voltage: 2.7...5.6V |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C8008-55BIN | Alliance Memory | SRAM 8M, 2.7-5.5V, 55ns 1024K x 8 Asyn SRAM |
auf Bestellung 330 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
AS6C8008-55BIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 2.7÷5.7V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 8Mb SRAM Memory organisation: 1024kx8bit Access time: 55ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...5.7V Anzahl je Verpackung: 480 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C8008-55BINTR | Alliance Memory | SRAM 8M, 2.7-5.5V, 55ns 1024K x 8 Asyn SRAM |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C8008-55BINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 2.7÷5.8V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 8Mb SRAM Memory organisation: 1024kx8bit Access time: 55ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...5.8V Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C8008-55ZIN | Alliance Memory | SRAM LP SRAM, 8Mb, 1M x 8, 2.7 - 5.5V, 44pin TSOP II, 55ns, Industrial Temp - Tray |
auf Bestellung 1681 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
AS6C8008-55ZIN | ALLIANCE MEMORY |
Description: ALLIANCE MEMORY - AS6C8008-55ZIN - SRAM, Asynchron, 8 Mbit, 1024K x 8 Bit, TSOP-II, 44 Pin(s), 2.7 V tariffCode: 85423245 rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Speicherdichte: 8Mbit usEccn: 3A991.b.2.a Versorgungsspannung, nom.: 3V Taktfrequenz, max.: -MHz Betriebstemperatur, min.: -40°C Versorgungsspannung, min.: 2.7V euEccn: NLR Anzahl der Pins: 44Pin(s) productTraceability: No Versorgungsspannung, max.: 5.5V Betriebstemperatur, max.: 85°C |
auf Bestellung 133 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||||
AS6C8008-55ZIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 2.7÷5.5V; 55ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 8Mb SRAM Memory organisation: 1024kx8bit Access time: 55ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC IC width: 400mils Operating voltage: 2.7...5.5V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1359 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
AS6C8008-55ZINTR | Alliance Memory | SRAM 8M, 2.7-5.5V, 55ns 1024K x 8 Asyn SRAM |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C8008-55ZINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 2.7÷5.6V; 55ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 8Mb SRAM Memory organisation: 1024kx8bit Access time: 55ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC IC width: 400mils Operating voltage: 2.7...5.6V Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C8008A-45BIN | Alliance Memory | SRAM 8M LOW, 3V, 1024K x 8 Asynch SRAM |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C8008A-45BINTR | Alliance Memory | SRAM 8M LOW, 3V, 1024K x 8 Asynch SRAM |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C8008A-45ZIN | Alliance Memory | SRAM 8M LOW, 3V, 1024K x 8 Asynch SRAM |
auf Bestellung 138 Stücke: Lieferzeit 10-14 Tag (e) |
||||||||||||||||
AS6C8008A-45ZINTR | Alliance Memory | SRAM 8M LOW, 3V, 1024K x 8 Asynch SRAM |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C8008A-55BIN | Alliance Memory | SRAM |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C8008A-55BINTR | Alliance Memory | SRAM |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C8008B-45ZIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 3V; 45ns; TSOP44 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 8Mb SRAM Memory organisation: 1024kx8bit Access time: 45ns Case: TSOP44 Mounting: SMD Integrated circuit features: LPC Operating voltage: 3V |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C8008B-45ZINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 3V; 45ns; TSOP44 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 8Mb SRAM Memory organisation: 1024kx8bit Access time: 45ns Case: TSOP44 Mounting: SMD Integrated circuit features: LPC Operating voltage: 3V |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C8008B-55BIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 3V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 8Mb SRAM Memory organisation: 1024kx8bit Access time: 55ns Case: TFBGA48 Mounting: SMD Integrated circuit features: LPC Operating voltage: 3V |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C8008B-55BINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 3V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 8Mb SRAM Memory organisation: 1024kx8bit Access time: 55ns Case: TFBGA48 Mounting: SMD Integrated circuit features: LPC Operating voltage: 3V |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C8008B-55ZIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 3V; 55ns; TSOP44 II; 400mils Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 8Mb SRAM Memory organisation: 1024kx8bit Access time: 55ns Case: TSOP44 II Mounting: SMD Integrated circuit features: LPC IC width: 400mils Operating voltage: 3V |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C8008B-55ZINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 3V; 55ns; TSOP44 II; 400mils Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 8Mb SRAM Memory organisation: 1024kx8bit Access time: 55ns Case: TSOP44 II Mounting: SMD Integrated circuit features: LPC IC width: 400mils Operating voltage: 3V |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C8008B-45BIN | Alliance Memory | SRAM LP SRAM, 8Mb, 1M x 8, 2.7 - 3.6V, 48ball TFBGA, (B-die), Industrial Temp - Tray |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C8008B-45BINTR | Alliance Memory | SRAM 8Mb, LP SRAM, 1M x 8, 2.7 - 5.5V,48ball TFBGA, 45ns, Industrial Temp, B Die, T&R |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C8008B-45ZIN | Alliance Memory | SRAM LP SRAM, 8Mb, 1M x 8, 2.7 - 3.6V, 44pin TSOP II, 45ns, Industrial Temp - Tray |
auf Bestellung 115 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
AS6C8008B-45ZIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 3V; 45ns; TSOP44 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 8Mb SRAM Memory organisation: 1024kx8bit Access time: 45ns Case: TSOP44 Mounting: SMD Integrated circuit features: LPC Operating voltage: 3V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C8008B-45ZINTR | Alliance Memory | SRAM 8Mb, LP SRAM, 1M x 8, 2.7 - 5.5V, 44pin TSOP II, 45ns, Industrial Temp, B Die, T&R |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C8008B-45ZINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 3V; 45ns; TSOP44 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 8Mb SRAM Memory organisation: 1024kx8bit Access time: 45ns Case: TSOP44 Mounting: SMD Integrated circuit features: LPC Operating voltage: 3V Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C8008B-55BIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 3V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 8Mb SRAM Memory organisation: 1024kx8bit Access time: 55ns Case: TFBGA48 Mounting: SMD Integrated circuit features: LPC Operating voltage: 3V Anzahl je Verpackung: 480 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C8008B-55BINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 3V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 8Mb SRAM Memory organisation: 1024kx8bit Access time: 55ns Case: TFBGA48 Mounting: SMD Integrated circuit features: LPC Operating voltage: 3V Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C8008B-55ZIN | Alliance Memory | SRAM LP SRAM, 8Mb, 1M x 8, 2.7 - 3.6V, 48ball TFBGA, 55ns, Industrial Temp - Tray |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C8008B-55ZIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 3V; 55ns; TSOP44 II; 400mils Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 8Mb SRAM Memory organisation: 1024kx8bit Access time: 55ns Case: TSOP44 II Mounting: SMD Integrated circuit features: LPC IC width: 400mils Operating voltage: 3V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C8008B-55ZINTR | Alliance Memory | SRAM 8Mb, LP SRAM, 1M x 8, 2.7 - 5.5V, 44pin TSOP II, 55ns, Industrial Temp, B Die, T&R |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C8008B-55ZINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 3V; 55ns; TSOP44 II; 400mils Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 8Mb SRAM Memory organisation: 1024kx8bit Access time: 55ns Case: TSOP44 II Mounting: SMD Integrated circuit features: LPC IC width: 400mils Operating voltage: 3V Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C8016-55BIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.7÷5V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Access time: 55ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...5V |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C8016-55BINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.7÷5V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Access time: 55ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...5V |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C8016-55TIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.7÷3.6V; 55ns; TSOP48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Access time: 55ns Case: TSOP48 Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...3.6V |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C8016-55TINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.7÷3.6V; 55ns; TSOP48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Access time: 55ns Case: TSOP48 Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...3.6V |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C8016-55ZIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.7÷5V; 55ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Access time: 55ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC IC width: 400mils Operating voltage: 2.7...5V |
auf Bestellung 103 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||
AS6C8016-55ZINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.7÷5V; 55ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Access time: 55ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC IC width: 400mils Operating voltage: 2.7...5V |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C8016-55BIN | Alliance Memory | SRAM 8M, 2.7-5.5V, 55ns 512K x 16 Asyn SRAM |
auf Bestellung 151 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
AS6C8016-55BIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.7÷5V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Access time: 55ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...5V Anzahl je Verpackung: 480 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C8016-55BINTR | Alliance Memory | SRAM 8M, 2.7-5.5V, 55ns 512K x 16 Asyn SRAM |
auf Bestellung 397 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
AS6C8016-55BINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.7÷5V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Access time: 55ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...5V Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C8016-55TIN | Alliance Memory | SRAM LP SRAM, 8Mb, 512K x 16, 2.7-3.6v, 48pin TSOP I, 55ns, Industrial Temp -Tray |
auf Bestellung 95 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
AS6C8016-55TIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.7÷3.6V; 55ns; TSOP48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Access time: 55ns Case: TSOP48 Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...3.6V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C8016-55TINTR | Alliance Memory | SRAM 8M L-Power, 2.7-3.6V 512k x 16, 48pin |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C8016-55TINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.7÷3.6V; 55ns; TSOP48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Access time: 55ns Case: TSOP48 Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...3.6V Anzahl je Verpackung: 1500 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
AS6C8016-55ZIN | ALLIANCE MEMORY |
Description: ALLIANCE MEMORY - AS6C8016-55ZIN - SRAM, Asynchron, 8 Mbit, 512K x 16 Bit, TSOP-II, 44 Pin(s), 2.7 V tariffCode: 85423245 rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Speicherdichte: 8Mbit usEccn: 3A991.b.2.a Versorgungsspannung, nom.: 3V Taktfrequenz, max.: -MHz Betriebstemperatur, min.: -40°C Versorgungsspannung, min.: 2.7V euEccn: NLR Anzahl der Pins: 44Pin(s) productTraceability: No Versorgungsspannung, max.: 5.5V Betriebstemperatur, max.: 85°C |
auf Bestellung 135 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||||
AS6C8016-55ZIN | Alliance Memory | SRAM LP SRAM, 8Mb, 512K x 16, 2.7 - 5.5V, 44pin TSOP II, 55ns, Industrial Temp - Tray |
auf Bestellung 280 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
AS6C8016-55ZIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.7÷5V; 55ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Access time: 55ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC IC width: 400mils Operating voltage: 2.7...5V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 103 Stücke: Lieferzeit 7-14 Tag (e) |
|
AS6C6416-55BINTR |
Hersteller: ALLIANCE MEMORY
AS6C6416-55BINTR Parallel SRAM memories - integ. circ.
AS6C6416-55BINTR Parallel SRAM memories - integ. circ.
Produkt ist nicht verfügbar
AS6C6416-55TIN |
Hersteller: Alliance Memory
SRAM 64M 3V 55ns Low Power 4096k x 16
SRAM 64M 3V 55ns Low Power 4096k x 16
auf Bestellung 103 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 47.24 EUR |
10+ | 44.42 EUR |
25+ | 41.52 EUR |
50+ | 40.69 EUR |
96+ | 36.52 EUR |
288+ | 35.89 EUR |
AS6C6416-55TIN |
Hersteller: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS6C6416-55TIN - SRAM, Asynchron, 64 Mbit, 4M x 16 Bit, TSOP-I, 48 Pin(s), 2.7 V
tariffCode: 85423245
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Speicherdichte: 64Mbit
usEccn: 3A991.b.1.a
Versorgungsspannung, nom.: 3V
Taktfrequenz, max.: -MHz
Betriebstemperatur, min.: -40°C
Versorgungsspannung, min.: 2.7V
euEccn: NLR
Anzahl der Pins: 48Pin(s)
productTraceability: No
Versorgungsspannung, max.: 3.6V
Betriebstemperatur, max.: 85°C
Description: ALLIANCE MEMORY - AS6C6416-55TIN - SRAM, Asynchron, 64 Mbit, 4M x 16 Bit, TSOP-I, 48 Pin(s), 2.7 V
tariffCode: 85423245
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Speicherdichte: 64Mbit
usEccn: 3A991.b.1.a
Versorgungsspannung, nom.: 3V
Taktfrequenz, max.: -MHz
Betriebstemperatur, min.: -40°C
Versorgungsspannung, min.: 2.7V
euEccn: NLR
Anzahl der Pins: 48Pin(s)
productTraceability: No
Versorgungsspannung, max.: 3.6V
Betriebstemperatur, max.: 85°C
auf Bestellung 86 Stücke:
Lieferzeit 14-21 Tag (e)AS6C6416-55TIN |
Hersteller: ALLIANCE MEMORY
AS6C6416-55TIN Parallel SRAM memories - integ. circ.
AS6C6416-55TIN Parallel SRAM memories - integ. circ.
Produkt ist nicht verfügbar
AS6C6416-55TINTR |
Hersteller: Alliance Memory
SRAM 64M 3V 55ns Low Power 4048k x 16
SRAM 64M 3V 55ns Low Power 4048k x 16
Produkt ist nicht verfügbar
AS6C6416-55TINTR |
Hersteller: ALLIANCE MEMORY
AS6C6416-55TINTR Parallel SRAM memories - integ. circ.
AS6C6416-55TINTR Parallel SRAM memories - integ. circ.
Produkt ist nicht verfügbar
AS6C8008-55BIN |
Hersteller: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 2.7÷5.7V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...5.7V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 2.7÷5.7V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...5.7V
Produkt ist nicht verfügbar
AS6C8008-55BINTR |
Hersteller: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 2.7÷5.8V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...5.8V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 2.7÷5.8V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...5.8V
Produkt ist nicht verfügbar
AS6C8008-55ZIN |
Hersteller: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 2.7÷5.5V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
IC width: 400mils
Operating voltage: 2.7...5.5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 2.7÷5.5V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
IC width: 400mils
Operating voltage: 2.7...5.5V
auf Bestellung 1359 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 8.99 EUR |
9+ | 8.51 EUR |
135+ | 8.18 EUR |
AS6C8008-55ZINTR |
Hersteller: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 2.7÷5.6V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
IC width: 400mils
Operating voltage: 2.7...5.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 2.7÷5.6V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
IC width: 400mils
Operating voltage: 2.7...5.6V
Produkt ist nicht verfügbar
AS6C8008-55BIN |
Hersteller: Alliance Memory
SRAM 8M, 2.7-5.5V, 55ns 1024K x 8 Asyn SRAM
SRAM 8M, 2.7-5.5V, 55ns 1024K x 8 Asyn SRAM
auf Bestellung 330 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 12.74 EUR |
10+ | 11.74 EUR |
25+ | 10.3 EUR |
100+ | 9.98 EUR |
250+ | 9.96 EUR |
480+ | 9.47 EUR |
960+ | 9.15 EUR |
AS6C8008-55BIN |
Hersteller: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 2.7÷5.7V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...5.7V
Anzahl je Verpackung: 480 Stücke
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 2.7÷5.7V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...5.7V
Anzahl je Verpackung: 480 Stücke
Produkt ist nicht verfügbar
AS6C8008-55BINTR |
Hersteller: Alliance Memory
SRAM 8M, 2.7-5.5V, 55ns 1024K x 8 Asyn SRAM
SRAM 8M, 2.7-5.5V, 55ns 1024K x 8 Asyn SRAM
Produkt ist nicht verfügbar
AS6C8008-55BINTR |
Hersteller: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 2.7÷5.8V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...5.8V
Anzahl je Verpackung: 2000 Stücke
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 2.7÷5.8V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...5.8V
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
AS6C8008-55ZIN |
Hersteller: Alliance Memory
SRAM LP SRAM, 8Mb, 1M x 8, 2.7 - 5.5V, 44pin TSOP II, 55ns, Industrial Temp - Tray
SRAM LP SRAM, 8Mb, 1M x 8, 2.7 - 5.5V, 44pin TSOP II, 55ns, Industrial Temp - Tray
auf Bestellung 1681 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 12.6 EUR |
10+ | 11.6 EUR |
25+ | 11.33 EUR |
100+ | 10.16 EUR |
270+ | 9.82 EUR |
540+ | 9.03 EUR |
2565+ | 8.98 EUR |
AS6C8008-55ZIN |
Hersteller: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS6C8008-55ZIN - SRAM, Asynchron, 8 Mbit, 1024K x 8 Bit, TSOP-II, 44 Pin(s), 2.7 V
tariffCode: 85423245
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Speicherdichte: 8Mbit
usEccn: 3A991.b.2.a
Versorgungsspannung, nom.: 3V
Taktfrequenz, max.: -MHz
Betriebstemperatur, min.: -40°C
Versorgungsspannung, min.: 2.7V
euEccn: NLR
Anzahl der Pins: 44Pin(s)
productTraceability: No
Versorgungsspannung, max.: 5.5V
Betriebstemperatur, max.: 85°C
Description: ALLIANCE MEMORY - AS6C8008-55ZIN - SRAM, Asynchron, 8 Mbit, 1024K x 8 Bit, TSOP-II, 44 Pin(s), 2.7 V
tariffCode: 85423245
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Speicherdichte: 8Mbit
usEccn: 3A991.b.2.a
Versorgungsspannung, nom.: 3V
Taktfrequenz, max.: -MHz
Betriebstemperatur, min.: -40°C
Versorgungsspannung, min.: 2.7V
euEccn: NLR
Anzahl der Pins: 44Pin(s)
productTraceability: No
Versorgungsspannung, max.: 5.5V
Betriebstemperatur, max.: 85°C
auf Bestellung 133 Stücke:
Lieferzeit 14-21 Tag (e)AS6C8008-55ZIN |
Hersteller: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 2.7÷5.5V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
IC width: 400mils
Operating voltage: 2.7...5.5V
Anzahl je Verpackung: 1 Stücke
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 2.7÷5.5V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
IC width: 400mils
Operating voltage: 2.7...5.5V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1359 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 8.99 EUR |
9+ | 8.51 EUR |
135+ | 8.18 EUR |
AS6C8008-55ZINTR |
Hersteller: Alliance Memory
SRAM 8M, 2.7-5.5V, 55ns 1024K x 8 Asyn SRAM
SRAM 8M, 2.7-5.5V, 55ns 1024K x 8 Asyn SRAM
Produkt ist nicht verfügbar
AS6C8008-55ZINTR |
Hersteller: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 2.7÷5.6V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
IC width: 400mils
Operating voltage: 2.7...5.6V
Anzahl je Verpackung: 1000 Stücke
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 2.7÷5.6V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
IC width: 400mils
Operating voltage: 2.7...5.6V
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
AS6C8008A-45BIN |
Hersteller: Alliance Memory
SRAM 8M LOW, 3V, 1024K x 8 Asynch SRAM
SRAM 8M LOW, 3V, 1024K x 8 Asynch SRAM
Produkt ist nicht verfügbar
AS6C8008A-45BINTR |
Hersteller: Alliance Memory
SRAM 8M LOW, 3V, 1024K x 8 Asynch SRAM
SRAM 8M LOW, 3V, 1024K x 8 Asynch SRAM
Produkt ist nicht verfügbar
AS6C8008A-45ZIN |
Hersteller: Alliance Memory
SRAM 8M LOW, 3V, 1024K x 8 Asynch SRAM
SRAM 8M LOW, 3V, 1024K x 8 Asynch SRAM
auf Bestellung 138 Stücke:
Lieferzeit 10-14 Tag (e)AS6C8008A-45ZINTR |
Hersteller: Alliance Memory
SRAM 8M LOW, 3V, 1024K x 8 Asynch SRAM
SRAM 8M LOW, 3V, 1024K x 8 Asynch SRAM
Produkt ist nicht verfügbar
AS6C8008B-45ZIN |
Hersteller: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 3V; 45ns; TSOP44
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 45ns
Case: TSOP44
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 3V; 45ns; TSOP44
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 45ns
Case: TSOP44
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 3V
Produkt ist nicht verfügbar
AS6C8008B-45ZINTR |
Hersteller: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 3V; 45ns; TSOP44
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 45ns
Case: TSOP44
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 3V; 45ns; TSOP44
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 45ns
Case: TSOP44
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 3V
Produkt ist nicht verfügbar
AS6C8008B-55BIN |
Hersteller: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 3V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 55ns
Case: TFBGA48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 3V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 55ns
Case: TFBGA48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 3V
Produkt ist nicht verfügbar
AS6C8008B-55BINTR |
Hersteller: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 3V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 55ns
Case: TFBGA48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 3V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 55ns
Case: TFBGA48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 3V
Produkt ist nicht verfügbar
AS6C8008B-55ZIN |
Hersteller: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 3V; 55ns; TSOP44 II; 400mils
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 55ns
Case: TSOP44 II
Mounting: SMD
Integrated circuit features: LPC
IC width: 400mils
Operating voltage: 3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 3V; 55ns; TSOP44 II; 400mils
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 55ns
Case: TSOP44 II
Mounting: SMD
Integrated circuit features: LPC
IC width: 400mils
Operating voltage: 3V
Produkt ist nicht verfügbar
AS6C8008B-55ZINTR |
Hersteller: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 3V; 55ns; TSOP44 II; 400mils
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 55ns
Case: TSOP44 II
Mounting: SMD
Integrated circuit features: LPC
IC width: 400mils
Operating voltage: 3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 3V; 55ns; TSOP44 II; 400mils
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 55ns
Case: TSOP44 II
Mounting: SMD
Integrated circuit features: LPC
IC width: 400mils
Operating voltage: 3V
Produkt ist nicht verfügbar
AS6C8008B-45BIN |
Hersteller: Alliance Memory
SRAM LP SRAM, 8Mb, 1M x 8, 2.7 - 3.6V, 48ball TFBGA, (B-die), Industrial Temp - Tray
SRAM LP SRAM, 8Mb, 1M x 8, 2.7 - 3.6V, 48ball TFBGA, (B-die), Industrial Temp - Tray
Produkt ist nicht verfügbar
AS6C8008B-45BINTR |
Hersteller: Alliance Memory
SRAM 8Mb, LP SRAM, 1M x 8, 2.7 - 5.5V,48ball TFBGA, 45ns, Industrial Temp, B Die, T&R
SRAM 8Mb, LP SRAM, 1M x 8, 2.7 - 5.5V,48ball TFBGA, 45ns, Industrial Temp, B Die, T&R
Produkt ist nicht verfügbar
AS6C8008B-45ZIN |
Hersteller: Alliance Memory
SRAM LP SRAM, 8Mb, 1M x 8, 2.7 - 3.6V, 44pin TSOP II, 45ns, Industrial Temp - Tray
SRAM LP SRAM, 8Mb, 1M x 8, 2.7 - 3.6V, 44pin TSOP II, 45ns, Industrial Temp - Tray
auf Bestellung 115 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 12.44 EUR |
10+ | 11.46 EUR |
25+ | 11.18 EUR |
100+ | 10.03 EUR |
270+ | 9.66 EUR |
540+ | 8.92 EUR |
1080+ | 8.89 EUR |
AS6C8008B-45ZIN |
Hersteller: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 3V; 45ns; TSOP44
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 45ns
Case: TSOP44
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 3V
Anzahl je Verpackung: 1 Stücke
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 3V; 45ns; TSOP44
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 45ns
Case: TSOP44
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 3V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
AS6C8008B-45ZINTR |
Hersteller: Alliance Memory
SRAM 8Mb, LP SRAM, 1M x 8, 2.7 - 5.5V, 44pin TSOP II, 45ns, Industrial Temp, B Die, T&R
SRAM 8Mb, LP SRAM, 1M x 8, 2.7 - 5.5V, 44pin TSOP II, 45ns, Industrial Temp, B Die, T&R
Produkt ist nicht verfügbar
AS6C8008B-45ZINTR |
Hersteller: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 3V; 45ns; TSOP44
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 45ns
Case: TSOP44
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 3V
Anzahl je Verpackung: 1000 Stücke
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 3V; 45ns; TSOP44
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 45ns
Case: TSOP44
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 3V
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
AS6C8008B-55BIN |
Hersteller: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 3V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 55ns
Case: TFBGA48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 3V
Anzahl je Verpackung: 480 Stücke
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 3V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 55ns
Case: TFBGA48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 3V
Anzahl je Verpackung: 480 Stücke
Produkt ist nicht verfügbar
AS6C8008B-55BINTR |
Hersteller: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 3V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 55ns
Case: TFBGA48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 3V
Anzahl je Verpackung: 2000 Stücke
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 3V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 55ns
Case: TFBGA48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 3V
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
AS6C8008B-55ZIN |
Hersteller: Alliance Memory
SRAM LP SRAM, 8Mb, 1M x 8, 2.7 - 3.6V, 48ball TFBGA, 55ns, Industrial Temp - Tray
SRAM LP SRAM, 8Mb, 1M x 8, 2.7 - 3.6V, 48ball TFBGA, 55ns, Industrial Temp - Tray
Produkt ist nicht verfügbar
AS6C8008B-55ZIN |
Hersteller: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 3V; 55ns; TSOP44 II; 400mils
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 55ns
Case: TSOP44 II
Mounting: SMD
Integrated circuit features: LPC
IC width: 400mils
Operating voltage: 3V
Anzahl je Verpackung: 1 Stücke
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 3V; 55ns; TSOP44 II; 400mils
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 55ns
Case: TSOP44 II
Mounting: SMD
Integrated circuit features: LPC
IC width: 400mils
Operating voltage: 3V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
AS6C8008B-55ZINTR |
Hersteller: Alliance Memory
SRAM 8Mb, LP SRAM, 1M x 8, 2.7 - 5.5V, 44pin TSOP II, 55ns, Industrial Temp, B Die, T&R
SRAM 8Mb, LP SRAM, 1M x 8, 2.7 - 5.5V, 44pin TSOP II, 55ns, Industrial Temp, B Die, T&R
Produkt ist nicht verfügbar
AS6C8008B-55ZINTR |
Hersteller: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 3V; 55ns; TSOP44 II; 400mils
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 55ns
Case: TSOP44 II
Mounting: SMD
Integrated circuit features: LPC
IC width: 400mils
Operating voltage: 3V
Anzahl je Verpackung: 1000 Stücke
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 3V; 55ns; TSOP44 II; 400mils
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 55ns
Case: TSOP44 II
Mounting: SMD
Integrated circuit features: LPC
IC width: 400mils
Operating voltage: 3V
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
AS6C8016-55BIN |
Hersteller: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.7÷5V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.7÷5V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...5V
Produkt ist nicht verfügbar
AS6C8016-55BINTR |
Hersteller: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.7÷5V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.7÷5V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...5V
Produkt ist nicht verfügbar
AS6C8016-55TIN |
Hersteller: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.7÷3.6V; 55ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Case: TSOP48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.7÷3.6V; 55ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Case: TSOP48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
AS6C8016-55TINTR |
Hersteller: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.7÷3.6V; 55ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Case: TSOP48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.7÷3.6V; 55ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Case: TSOP48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
AS6C8016-55ZIN |
Hersteller: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.7÷5V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
IC width: 400mils
Operating voltage: 2.7...5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.7÷5V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
IC width: 400mils
Operating voltage: 2.7...5V
auf Bestellung 103 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 10.51 EUR |
10+ | 7.25 EUR |
100+ | 7.15 EUR |
AS6C8016-55ZINTR |
Hersteller: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.7÷5V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
IC width: 400mils
Operating voltage: 2.7...5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.7÷5V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
IC width: 400mils
Operating voltage: 2.7...5V
Produkt ist nicht verfügbar
AS6C8016-55BIN |
Hersteller: Alliance Memory
SRAM 8M, 2.7-5.5V, 55ns 512K x 16 Asyn SRAM
SRAM 8M, 2.7-5.5V, 55ns 512K x 16 Asyn SRAM
auf Bestellung 151 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 12.74 EUR |
10+ | 11.74 EUR |
25+ | 10.3 EUR |
100+ | 9.98 EUR |
250+ | 9.96 EUR |
480+ | 9.47 EUR |
960+ | 9.15 EUR |
AS6C8016-55BIN |
Hersteller: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.7÷5V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...5V
Anzahl je Verpackung: 480 Stücke
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.7÷5V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...5V
Anzahl je Verpackung: 480 Stücke
Produkt ist nicht verfügbar
AS6C8016-55BINTR |
Hersteller: Alliance Memory
SRAM 8M, 2.7-5.5V, 55ns 512K x 16 Asyn SRAM
SRAM 8M, 2.7-5.5V, 55ns 512K x 16 Asyn SRAM
auf Bestellung 397 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 12.94 EUR |
10+ | 11.9 EUR |
25+ | 11.65 EUR |
100+ | 10.4 EUR |
250+ | 10.1 EUR |
500+ | 9.61 EUR |
1000+ | 9.28 EUR |
AS6C8016-55BINTR |
Hersteller: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.7÷5V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...5V
Anzahl je Verpackung: 2000 Stücke
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.7÷5V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...5V
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
AS6C8016-55TIN |
Hersteller: Alliance Memory
SRAM LP SRAM, 8Mb, 512K x 16, 2.7-3.6v, 48pin TSOP I, 55ns, Industrial Temp -Tray
SRAM LP SRAM, 8Mb, 512K x 16, 2.7-3.6v, 48pin TSOP I, 55ns, Industrial Temp -Tray
auf Bestellung 95 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 13.24 EUR |
10+ | 12.2 EUR |
25+ | 11.93 EUR |
96+ | 10.6 EUR |
288+ | 10.54 EUR |
576+ | 10.49 EUR |
1056+ | 10.44 EUR |
AS6C8016-55TIN |
Hersteller: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.7÷3.6V; 55ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Case: TSOP48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
Anzahl je Verpackung: 1 Stücke
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.7÷3.6V; 55ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Case: TSOP48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
AS6C8016-55TINTR |
Hersteller: Alliance Memory
SRAM 8M L-Power, 2.7-3.6V 512k x 16, 48pin
SRAM 8M L-Power, 2.7-3.6V 512k x 16, 48pin
Produkt ist nicht verfügbar
AS6C8016-55TINTR |
Hersteller: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.7÷3.6V; 55ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Case: TSOP48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
Anzahl je Verpackung: 1500 Stücke
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.7÷3.6V; 55ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Case: TSOP48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
Anzahl je Verpackung: 1500 Stücke
Produkt ist nicht verfügbar
AS6C8016-55ZIN |
Hersteller: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS6C8016-55ZIN - SRAM, Asynchron, 8 Mbit, 512K x 16 Bit, TSOP-II, 44 Pin(s), 2.7 V
tariffCode: 85423245
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Speicherdichte: 8Mbit
usEccn: 3A991.b.2.a
Versorgungsspannung, nom.: 3V
Taktfrequenz, max.: -MHz
Betriebstemperatur, min.: -40°C
Versorgungsspannung, min.: 2.7V
euEccn: NLR
Anzahl der Pins: 44Pin(s)
productTraceability: No
Versorgungsspannung, max.: 5.5V
Betriebstemperatur, max.: 85°C
Description: ALLIANCE MEMORY - AS6C8016-55ZIN - SRAM, Asynchron, 8 Mbit, 512K x 16 Bit, TSOP-II, 44 Pin(s), 2.7 V
tariffCode: 85423245
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Speicherdichte: 8Mbit
usEccn: 3A991.b.2.a
Versorgungsspannung, nom.: 3V
Taktfrequenz, max.: -MHz
Betriebstemperatur, min.: -40°C
Versorgungsspannung, min.: 2.7V
euEccn: NLR
Anzahl der Pins: 44Pin(s)
productTraceability: No
Versorgungsspannung, max.: 5.5V
Betriebstemperatur, max.: 85°C
auf Bestellung 135 Stücke:
Lieferzeit 14-21 Tag (e)AS6C8016-55ZIN |
Hersteller: Alliance Memory
SRAM LP SRAM, 8Mb, 512K x 16, 2.7 - 5.5V, 44pin TSOP II, 55ns, Industrial Temp - Tray
SRAM LP SRAM, 8Mb, 512K x 16, 2.7 - 5.5V, 44pin TSOP II, 55ns, Industrial Temp - Tray
auf Bestellung 280 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 12.6 EUR |
10+ | 11.6 EUR |
25+ | 11.33 EUR |
100+ | 10.17 EUR |
270+ | 9.84 EUR |
540+ | 9.03 EUR |
5130+ | 9.01 EUR |
AS6C8016-55ZIN |
Hersteller: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.7÷5V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
IC width: 400mils
Operating voltage: 2.7...5V
Anzahl je Verpackung: 1 Stücke
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.7÷5V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
IC width: 400mils
Operating voltage: 2.7...5V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 103 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 10.51 EUR |
10+ | 7.25 EUR |
100+ | 7.15 EUR |