Produkte > CENTRAL SEMICONDUCTOR CORP > Alle Produkte des Herstellers CENTRAL SEMICONDUCTOR CORP (7772) > Seite 86 nach 130
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CTLDM3590 TR | Central Semiconductor Corp |
![]() Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 100mA, 4.5V Power Dissipation (Max): 125mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TLM3D6D8 Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): 8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.46 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 9 pF @ 15 V |
Produkt ist nicht verfügbar |
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CSHDD16-200C TR13 PBFREE | Central Semiconductor Corp |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 16A Supplier Device Package: D2PAK Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 16 A Current - Reverse Leakage @ Vr: 50 µA @ 200 V |
auf Bestellung 3200 Stücke: Lieferzeit 10-14 Tag (e) |
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CSHDD16-200C TR13 PBFREE | Central Semiconductor Corp |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 16A Supplier Device Package: D2PAK Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 16 A Current - Reverse Leakage @ Vr: 50 µA @ 200 V |
auf Bestellung 3200 Stücke: Lieferzeit 10-14 Tag (e) |
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CTLSH4-200M364 TR13 PBFREE | Central Semiconductor Corp |
![]() Packaging: Tape & Reel (TR) Package / Case: 3-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 140pF @ 4V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: TLM364 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 4 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
Produkt ist nicht verfügbar |
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CTLSH4-200M364 TR13 PBFREE | Central Semiconductor Corp |
![]() Packaging: Cut Tape (CT) Package / Case: 3-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 140pF @ 4V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: TLM364 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 4 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
auf Bestellung 4647 Stücke: Lieferzeit 10-14 Tag (e) |
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CLL5250B TR PBFREE | Central Semiconductor Corp |
![]() Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 20 V Impedance (Max) (Zzt): 25 Ohms Supplier Device Package: SOD-80 Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 15 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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CLL5250B TR PBFREE | Central Semiconductor Corp |
![]() Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 20 V Impedance (Max) (Zzt): 25 Ohms Supplier Device Package: SOD-80 Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 15 V |
auf Bestellung 3683 Stücke: Lieferzeit 10-14 Tag (e) |
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2N1772A | Central Semiconductor Corp | Description: SCR 7.4A 100V TO-64 |
Produkt ist nicht verfügbar |
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2N1776A | Central Semiconductor Corp | Description: SCR 7.4A 300V TO-64 |
Produkt ist nicht verfügbar |
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CPZ19-BZX55C22-CT | Central Semiconductor Corp |
Description: DIODE ZENER Tolerance: ±5.68% Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 22 V Impedance (Max) (Zzt): 55 Ohms Supplier Device Package: Die Part Status: Obsolete Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 16 V |
Produkt ist nicht verfügbar |
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CMDZ5241B BK PBFREE | Central Semiconductor Corp |
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Produkt ist nicht verfügbar |
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CMHZ5241B BK PBFREE | Central Semiconductor Corp |
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Produkt ist nicht verfügbar |
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CTLSH15-30M364 TR13 PBFREE | Central Semiconductor Corp |
![]() Packaging: Tape & Reel (TR) Package / Case: 3-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 920pF @ 4V, 1MHz Current - Average Rectified (Io): 15A Supplier Device Package: TLM364 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 560 mV @ 15 A Current - Reverse Leakage @ Vr: 100 µA @ 30 V |
Produkt ist nicht verfügbar |
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CTLSH15-30M364 TR13 PBFREE | Central Semiconductor Corp |
![]() Packaging: Cut Tape (CT) Package / Case: 3-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 920pF @ 4V, 1MHz Current - Average Rectified (Io): 15A Supplier Device Package: TLM364 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 560 mV @ 15 A Current - Reverse Leakage @ Vr: 100 µA @ 30 V |
auf Bestellung 4705 Stücke: Lieferzeit 10-14 Tag (e) |
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CTLTVS12 TR PBFREE | Central Semiconductor Corp |
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Produkt ist nicht verfügbar |
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CTLTVS12 TR PBFREE | Central Semiconductor Corp |
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auf Bestellung 6682 Stücke: Lieferzeit 10-14 Tag (e) |
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CMKD6263 TR PBFREE | Central Semiconductor Corp |
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Produkt ist nicht verfügbar |
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CMKD6263 TR PBFREE | Central Semiconductor Corp |
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auf Bestellung 2127 Stücke: Lieferzeit 10-14 Tag (e) |
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CMRSH-4DO TR PBFREE | Central Semiconductor Corp |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-963 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 5 ns Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 200mA Supplier Device Package: SOT-963 Operating Temperature - Junction: -65°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA Current - Reverse Leakage @ Vr: 200 nA @ 30 V |
auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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CMRSH-4DO TR PBFREE | Central Semiconductor Corp |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-963 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 5 ns Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 200mA Supplier Device Package: SOT-963 Operating Temperature - Junction: -65°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA Current - Reverse Leakage @ Vr: 200 nA @ 30 V |
auf Bestellung 17773 Stücke: Lieferzeit 10-14 Tag (e) |
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1N4001 BK | Central Semiconductor Corp |
![]() Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V |
Produkt ist nicht verfügbar |
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1N4001 TR | Central Semiconductor Corp |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V |
Produkt ist nicht verfügbar |
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1SMB16CA TR13 | Central Semiconductor Corp |
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Produkt ist nicht verfügbar |
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1SMB16CA TR13 | Central Semiconductor Corp |
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auf Bestellung 2990 Stücke: Lieferzeit 10-14 Tag (e) |
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CS3P-40P | Central Semiconductor Corp |
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Produkt ist nicht verfügbar |
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CS3P-40PB | Central Semiconductor Corp |
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Produkt ist nicht verfügbar |
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2N4104 PBFREE | Central Semiconductor Corp | Description: TRANSISTOR-SMALL SI SMD |
Produkt ist nicht verfügbar |
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2N4137 | Central Semiconductor Corp |
![]() Packaging: Box Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA Current - Collector Cutoff (Max): 400nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V Frequency - Transition: 500MHz Supplier Device Package: TO-18 Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 360 mW |
Produkt ist nicht verfügbar |
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CBRLD1-08 BK | Central Semiconductor Corp |
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Produkt ist nicht verfügbar |
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1N4002 BK | Central Semiconductor Corp |
![]() Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
Produkt ist nicht verfügbar |
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1N4002 TR | Central Semiconductor Corp |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
Produkt ist nicht verfügbar |
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1N4002G BK | Central Semiconductor Corp |
![]() Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Supplier Device Package: DO-41 |
Produkt ist nicht verfügbar |
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1N4002GL TR | Central Semiconductor Corp |
Description: DIODE STANDARD 100V 1A DO41 Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
Produkt ist nicht verfügbar |
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1N6274A BK TIN/LEAD | Central Semiconductor Corp |
![]() Packaging: Box Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 82A Voltage - Reverse Standoff (Typ): 11.1V Supplier Device Package: DO-201 Unidirectional Channels: 1 Voltage - Breakdown (Min): 13V Voltage - Clamping (Max) @ Ipp: 18.2V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Active |
auf Bestellung 469 Stücke: Lieferzeit 10-14 Tag (e) |
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1N6275A TR TIN/LEAD | Central Semiconductor Corp |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 71A Voltage - Reverse Standoff (Typ): 12.8V Supplier Device Package: DO-201 Unidirectional Channels: 1 Voltage - Breakdown (Min): 15V Voltage - Clamping (Max) @ Ipp: 21.2V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Active |
Produkt ist nicht verfügbar |
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1N6275A TR TIN/LEAD | Central Semiconductor Corp |
![]() Packaging: Cut Tape (CT) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 71A Voltage - Reverse Standoff (Typ): 12.8V Supplier Device Package: DO-201 Unidirectional Channels: 1 Voltage - Breakdown (Min): 15V Voltage - Clamping (Max) @ Ipp: 21.2V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Active |
Produkt ist nicht verfügbar |
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1N6278A TR TIN/LEAD | Central Semiconductor Corp |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 54A Voltage - Reverse Standoff (Typ): 17.1V Supplier Device Package: DO-201 Unidirectional Channels: 1 Voltage - Breakdown (Min): 20V Voltage - Clamping (Max) @ Ipp: 27.7V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Active |
Produkt ist nicht verfügbar |
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1N6278A TR TIN/LEAD | Central Semiconductor Corp |
![]() Packaging: Cut Tape (CT) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 54A Voltage - Reverse Standoff (Typ): 17.1V Supplier Device Package: DO-201 Unidirectional Channels: 1 Voltage - Breakdown (Min): 20V Voltage - Clamping (Max) @ Ipp: 27.7V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Active |
Produkt ist nicht verfügbar |
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1N6282A TR TIN/LEAD | Central Semiconductor Corp |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 36A Voltage - Reverse Standoff (Typ): 25.6V Supplier Device Package: DO-201 Unidirectional Channels: 1 Voltage - Breakdown (Min): 30V Voltage - Clamping (Max) @ Ipp: 41.4V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
Produkt ist nicht verfügbar |
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1N6282A TR TIN/LEAD | Central Semiconductor Corp |
![]() Packaging: Cut Tape (CT) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 36A Voltage - Reverse Standoff (Typ): 25.6V Supplier Device Package: DO-201 Unidirectional Channels: 1 Voltage - Breakdown (Min): 30V Voltage - Clamping (Max) @ Ipp: 41.4V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
Produkt ist nicht verfügbar |
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2N1480 PBFREE | Central Semiconductor Corp |
![]() Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.4V @ 20mA, 200mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 200mA, 4V Frequency - Transition: 1.5MHz Supplier Device Package: TO-39 Part Status: Active Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 55 V Power - Max: 5 W |
auf Bestellung 1061 Stücke: Lieferzeit 10-14 Tag (e) |
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1N5264B TR | Central Semiconductor Corp |
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Produkt ist nicht verfügbar |
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1N5264B BK | Central Semiconductor Corp |
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Produkt ist nicht verfügbar |
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1.5SMC56CA TR13 PBFREE | Central Semiconductor Corp |
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auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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1.5SMC56CA TR13 PBFREE | Central Semiconductor Corp |
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auf Bestellung 14849 Stücke: Lieferzeit 10-14 Tag (e) |
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1.5SMC56A TR13 PBFREE | Central Semiconductor Corp |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 19.5A Voltage - Reverse Standoff (Typ): 47.8V Supplier Device Package: SMC Unidirectional Channels: 1 Voltage - Breakdown (Min): 53.2V Voltage - Clamping (Max) @ Ipp: 77V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
Produkt ist nicht verfügbar |
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CP647-CEN1359-CM | Central Semiconductor Corp | Description: TRANS PNP DARLINGTON DIE |
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CEDM7002AE TR PBFREE | Central Semiconductor Corp |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V Power Dissipation (Max): 100mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-883L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): 20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V |
Produkt ist nicht verfügbar |
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CEDM7002AE TR PBFREE | Central Semiconductor Corp |
![]() Packaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V Power Dissipation (Max): 100mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-883L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): 20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V |
auf Bestellung 2872 Stücke: Lieferzeit 10-14 Tag (e) |
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CEDM8004 TR PBFREE | Central Semiconductor Corp |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 450mA (Ta) Rds On (Max) @ Id, Vgs: 1.1Ohm @ 430mA, 4.5V Power Dissipation (Max): 100mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-883VL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): 8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.88 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 25 V |
Produkt ist nicht verfügbar |
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CEDM8004 TR PBFREE | Central Semiconductor Corp |
![]() Packaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 450mA (Ta) Rds On (Max) @ Id, Vgs: 1.1Ohm @ 430mA, 4.5V Power Dissipation (Max): 100mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-883VL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): 8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.88 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 25 V |
auf Bestellung 539 Stücke: Lieferzeit 10-14 Tag (e) |
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CDM3-800 TR13 PBFREE | Central Semiconductor Corp |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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CDM3-800 TR13 PBFREE | Central Semiconductor Corp |
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auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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CMLDM8120G TR PBFREE | Central Semiconductor Corp |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 860mA (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 950mA, 4.5V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): 8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 3.56 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 16 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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CMLDM8120G TR PBFREE | Central Semiconductor Corp |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 860mA (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 950mA, 4.5V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): 8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 3.56 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 16 V |
auf Bestellung 1439 Stücke: Lieferzeit 10-14 Tag (e) |
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CDM4-650 TR13 PBFREE | Central Semiconductor Corp |
Description: MOSFET N-CH 650V 4A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 2.7Ohm @ 2A, 10V Power Dissipation (Max): 620mW (Ta), 77W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): 30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 11.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 463 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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CDM4-650 TR13 PBFREE | Central Semiconductor Corp |
Description: MOSFET N-CH 650V 4A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 2.7Ohm @ 2A, 10V Power Dissipation (Max): 620mW (Ta), 77W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): 30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 11.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 463 pF @ 25 V |
auf Bestellung 1446 Stücke: Lieferzeit 10-14 Tag (e) |
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CEDM7001 TR PBFREE | Central Semiconductor Corp |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V Power Dissipation (Max): 100mW (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-883 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs (Max): 10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.57 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 9 pF @ 3 V |
auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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CEDM7001 TR PBFREE | Central Semiconductor Corp |
![]() Packaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V Power Dissipation (Max): 100mW (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-883 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs (Max): 10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.57 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 9 pF @ 3 V |
auf Bestellung 8400 Stücke: Lieferzeit 10-14 Tag (e) |
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CDM7-600LR TR13 PBFREE | Central Semiconductor Corp |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 580mOhm @ 3.5A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): 30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
CTLDM3590 TR |
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Hersteller: Central Semiconductor Corp
Description: MOSFET N-CH 20V 160MA TLM3D6D8
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 100mA, 4.5V
Power Dissipation (Max): 125mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TLM3D6D8
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): 8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.46 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 9 pF @ 15 V
Description: MOSFET N-CH 20V 160MA TLM3D6D8
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 100mA, 4.5V
Power Dissipation (Max): 125mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TLM3D6D8
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): 8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.46 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 9 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CSHDD16-200C TR13 PBFREE |
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Hersteller: Central Semiconductor Corp
Description: DIODE ARR SCHOTT 200V 16A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 16 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Description: DIODE ARR SCHOTT 200V 16A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 16 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
auf Bestellung 3200 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
800+ | 1.37 EUR |
1600+ | 1.11 EUR |
2400+ | 1.05 EUR |
CSHDD16-200C TR13 PBFREE |
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Hersteller: Central Semiconductor Corp
Description: DIODE ARR SCHOTT 200V 16A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 16 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Description: DIODE ARR SCHOTT 200V 16A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 16 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
auf Bestellung 3200 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
7+ | 2.53 EUR |
10+ | 2.08 EUR |
100+ | 1.61 EUR |
CTLSH4-200M364 TR13 PBFREE |
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Hersteller: Central Semiconductor Corp
Description: DIODE SCHOTTKY 200V 4A TLM364
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TLM364
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 4 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE SCHOTTKY 200V 4A TLM364
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TLM364
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 4 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CTLSH4-200M364 TR13 PBFREE |
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Hersteller: Central Semiconductor Corp
Description: DIODE SCHOTTKY 200V 4A TLM364
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TLM364
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 4 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE SCHOTTKY 200V 4A TLM364
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TLM364
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 4 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 4647 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
13+ | 1.41 EUR |
16+ | 1.15 EUR |
100+ | 0.89 EUR |
500+ | 0.76 EUR |
1000+ | 0.62 EUR |
2000+ | 0.58 EUR |
CLL5250B TR PBFREE |
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Hersteller: Central Semiconductor Corp
Description: DIODE ZENER 20V 500MW SOD80
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-80
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
Description: DIODE ZENER 20V 500MW SOD80
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-80
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2500+ | 0.11 EUR |
CLL5250B TR PBFREE |
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Hersteller: Central Semiconductor Corp
Description: DIODE ZENER 20V 500MW SOD80
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-80
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
Description: DIODE ZENER 20V 500MW SOD80
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-80
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
auf Bestellung 3683 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
30+ | 0.60 EUR |
40+ | 0.44 EUR |
100+ | 0.25 EUR |
500+ | 0.17 EUR |
1000+ | 0.13 EUR |
2N1772A |
Hersteller: Central Semiconductor Corp
Description: SCR 7.4A 100V TO-64
Description: SCR 7.4A 100V TO-64
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2N1776A |
Hersteller: Central Semiconductor Corp
Description: SCR 7.4A 300V TO-64
Description: SCR 7.4A 300V TO-64
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CPZ19-BZX55C22-CT |
Hersteller: Central Semiconductor Corp
Description: DIODE ZENER
Tolerance: ±5.68%
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: Die
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 16 V
Description: DIODE ZENER
Tolerance: ±5.68%
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: Die
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 16 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CMDZ5241B BK PBFREE |
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Hersteller: Central Semiconductor Corp
Description: DIODE ZENER 11V 250MW SOD323
Description: DIODE ZENER 11V 250MW SOD323
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CMHZ5241B BK PBFREE |
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Hersteller: Central Semiconductor Corp
Description: DIODE ZENER 11V 500MW SOD123
Description: DIODE ZENER 11V 500MW SOD123
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CTLSH15-30M364 TR13 PBFREE |
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Hersteller: Central Semiconductor Corp
Description: DIODE SCHOTTKY 30V 15A TLM364
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 920pF @ 4V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TLM364
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Description: DIODE SCHOTTKY 30V 15A TLM364
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 920pF @ 4V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TLM364
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CTLSH15-30M364 TR13 PBFREE |
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Hersteller: Central Semiconductor Corp
Description: DIODE SCHOTTKY 30V 15A TLM364
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 920pF @ 4V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TLM364
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Description: DIODE SCHOTTKY 30V 15A TLM364
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 920pF @ 4V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TLM364
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
auf Bestellung 4705 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
9+ | 2.11 EUR |
11+ | 1.73 EUR |
100+ | 1.35 EUR |
500+ | 1.14 EUR |
1000+ | 0.93 EUR |
2000+ | 0.87 EUR |
CTLTVS12 TR PBFREE |
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Hersteller: Central Semiconductor Corp
Description: TVS DIODE 9VWM 18VC TLM2D3D6
Description: TVS DIODE 9VWM 18VC TLM2D3D6
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CTLTVS12 TR PBFREE |
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Hersteller: Central Semiconductor Corp
Description: TVS DIODE 9VWM 18VC TLM2D3D6
Description: TVS DIODE 9VWM 18VC TLM2D3D6
auf Bestellung 6682 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
CMKD6263 TR PBFREE |
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Hersteller: Central Semiconductor Corp
Description: DIODE ARRAY SCHOTTKY 70V SOT363
Description: DIODE ARRAY SCHOTTKY 70V SOT363
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CMKD6263 TR PBFREE |
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Hersteller: Central Semiconductor Corp
Description: DIODE ARRAY SCHOTTKY 70V SOT363
Description: DIODE ARRAY SCHOTTKY 70V SOT363
auf Bestellung 2127 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
14+ | 1.28 EUR |
16+ | 1.14 EUR |
100+ | 0.87 EUR |
500+ | 0.69 EUR |
1000+ | 0.55 EUR |
CMRSH-4DO TR PBFREE |
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Hersteller: Central Semiconductor Corp
Description: DIODE ARR SCHOT 40V 200MA SOT963
Packaging: Tape & Reel (TR)
Package / Case: SOT-963
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-963
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 200 nA @ 30 V
Description: DIODE ARR SCHOT 40V 200MA SOT963
Packaging: Tape & Reel (TR)
Package / Case: SOT-963
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-963
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 200 nA @ 30 V
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
8000+ | 0.67 EUR |
CMRSH-4DO TR PBFREE |
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Hersteller: Central Semiconductor Corp
Description: DIODE ARR SCHOT 40V 200MA SOT963
Packaging: Cut Tape (CT)
Package / Case: SOT-963
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-963
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 200 nA @ 30 V
Description: DIODE ARR SCHOT 40V 200MA SOT963
Packaging: Cut Tape (CT)
Package / Case: SOT-963
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-963
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 200 nA @ 30 V
auf Bestellung 17773 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
7+ | 2.76 EUR |
11+ | 1.75 EUR |
100+ | 1.17 EUR |
500+ | 0.92 EUR |
1000+ | 0.84 EUR |
2000+ | 0.78 EUR |
1N4001 BK |
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Hersteller: Central Semiconductor Corp
Description: DIODE GEN PURP 50V 1A DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Description: DIODE GEN PURP 50V 1A DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
1N4001 TR |
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Hersteller: Central Semiconductor Corp
Description: DIODE GEN PURP 50V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Description: DIODE GEN PURP 50V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
1SMB16CA TR13 |
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Hersteller: Central Semiconductor Corp
Description: TVS DIODE 16VWM 26VC SMB
Description: TVS DIODE 16VWM 26VC SMB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
1SMB16CA TR13 |
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Hersteller: Central Semiconductor Corp
Description: TVS DIODE 16VWM 26VC SMB
Description: TVS DIODE 16VWM 26VC SMB
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
CS3P-40P |
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Hersteller: Central Semiconductor Corp
Description: TRIAC 40A 1000V TO-3
Description: TRIAC 40A 1000V TO-3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CS3P-40PB |
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Hersteller: Central Semiconductor Corp
Description: SCR 1200V 40A TO3
Description: SCR 1200V 40A TO3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2N4104 PBFREE |
Hersteller: Central Semiconductor Corp
Description: TRANSISTOR-SMALL SI SMD
Description: TRANSISTOR-SMALL SI SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2N4137 |
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Hersteller: Central Semiconductor Corp
Description: TRANS 20V 0.2A TO-18
Packaging: Box
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Frequency - Transition: 500MHz
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 360 mW
Description: TRANS 20V 0.2A TO-18
Packaging: Box
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Frequency - Transition: 500MHz
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 360 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CBRLD1-08 BK |
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Hersteller: Central Semiconductor Corp
Description: BRIDGE RECT 1P 800V 1A 4LPDIP
Description: BRIDGE RECT 1P 800V 1A 4LPDIP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
1N4002 BK |
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Hersteller: Central Semiconductor Corp
Description: DIODE GEN PURP 100V 1A DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: DIODE GEN PURP 100V 1A DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
1N4002 TR |
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Hersteller: Central Semiconductor Corp
Description: DIODE GEN PURP 100V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: DIODE GEN PURP 100V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
1N4002G BK |
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Hersteller: Central Semiconductor Corp
Description: DIODE GEN PURPOSE DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Supplier Device Package: DO-41
Description: DIODE GEN PURPOSE DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Supplier Device Package: DO-41
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
1N4002GL TR |
Hersteller: Central Semiconductor Corp
Description: DIODE STANDARD 100V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: DIODE STANDARD 100V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
1N6274A BK TIN/LEAD |
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Hersteller: Central Semiconductor Corp
Description: TVS DIODE 11.1VWM 18.2VC DO201
Packaging: Box
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 82A
Voltage - Reverse Standoff (Typ): 11.1V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 11.1VWM 18.2VC DO201
Packaging: Box
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 82A
Voltage - Reverse Standoff (Typ): 11.1V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
auf Bestellung 469 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
15+ | 1.25 EUR |
16+ | 1.11 EUR |
100+ | 0.85 EUR |
1N6275A TR TIN/LEAD |
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Hersteller: Central Semiconductor Corp
Description: TVS DIODE 12.8VWM 21.2VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 71A
Voltage - Reverse Standoff (Typ): 12.8V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15V
Voltage - Clamping (Max) @ Ipp: 21.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 12.8VWM 21.2VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 71A
Voltage - Reverse Standoff (Typ): 12.8V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15V
Voltage - Clamping (Max) @ Ipp: 21.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
1N6275A TR TIN/LEAD |
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Hersteller: Central Semiconductor Corp
Description: TVS DIODE 12.8VWM 21.2VC DO201
Packaging: Cut Tape (CT)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 71A
Voltage - Reverse Standoff (Typ): 12.8V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15V
Voltage - Clamping (Max) @ Ipp: 21.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 12.8VWM 21.2VC DO201
Packaging: Cut Tape (CT)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 71A
Voltage - Reverse Standoff (Typ): 12.8V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15V
Voltage - Clamping (Max) @ Ipp: 21.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
1N6278A TR TIN/LEAD |
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Hersteller: Central Semiconductor Corp
Description: TVS DIODE 17.1VWM 27.7VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 54A
Voltage - Reverse Standoff (Typ): 17.1V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 27.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 17.1VWM 27.7VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 54A
Voltage - Reverse Standoff (Typ): 17.1V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 27.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
1N6278A TR TIN/LEAD |
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Hersteller: Central Semiconductor Corp
Description: TVS DIODE 17.1VWM 27.7VC DO201
Packaging: Cut Tape (CT)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 54A
Voltage - Reverse Standoff (Typ): 17.1V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 27.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 17.1VWM 27.7VC DO201
Packaging: Cut Tape (CT)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 54A
Voltage - Reverse Standoff (Typ): 17.1V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 27.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
1N6282A TR TIN/LEAD |
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Hersteller: Central Semiconductor Corp
Description: TVS DIODE 25.6VWM 41.4VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36A
Voltage - Reverse Standoff (Typ): 25.6V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 30V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 25.6VWM 41.4VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36A
Voltage - Reverse Standoff (Typ): 25.6V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 30V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
1N6282A TR TIN/LEAD |
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Hersteller: Central Semiconductor Corp
Description: TVS DIODE 25.6VWM 41.4VC DO201
Packaging: Cut Tape (CT)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36A
Voltage - Reverse Standoff (Typ): 25.6V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 30V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 25.6VWM 41.4VC DO201
Packaging: Cut Tape (CT)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36A
Voltage - Reverse Standoff (Typ): 25.6V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 30V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2N1480 PBFREE |
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Hersteller: Central Semiconductor Corp
Description: TRANS NPN 55V 1.5A TO-39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 20mA, 200mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 200mA, 4V
Frequency - Transition: 1.5MHz
Supplier Device Package: TO-39
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 55 V
Power - Max: 5 W
Description: TRANS NPN 55V 1.5A TO-39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 20mA, 200mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 200mA, 4V
Frequency - Transition: 1.5MHz
Supplier Device Package: TO-39
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 55 V
Power - Max: 5 W
auf Bestellung 1061 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 6.34 EUR |
10+ | 5.69 EUR |
100+ | 4.66 EUR |
500+ | 3.97 EUR |
1000+ | 3.35 EUR |
1N5264B TR |
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Hersteller: Central Semiconductor Corp
Description: DIODE ZENER 60V 500MW DO35
Description: DIODE ZENER 60V 500MW DO35
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
1N5264B BK |
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Hersteller: Central Semiconductor Corp
Description: DIODE ZENER 60V 500MW DO35
Description: DIODE ZENER 60V 500MW DO35
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
1.5SMC56CA TR13 PBFREE |
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Hersteller: Central Semiconductor Corp
Description: TVS DIODE 47.8VWM 77VC SMC
Description: TVS DIODE 47.8VWM 77VC SMC
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 1.06 EUR |
1.5SMC56CA TR13 PBFREE |
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Hersteller: Central Semiconductor Corp
Description: TVS DIODE 47.8VWM 77VC SMC
Description: TVS DIODE 47.8VWM 77VC SMC
auf Bestellung 14849 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
8+ | 2.50 EUR |
10+ | 2.22 EUR |
100+ | 1.73 EUR |
500+ | 1.43 EUR |
1000+ | 1.13 EUR |
1.5SMC56A TR13 PBFREE |
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Hersteller: Central Semiconductor Corp
Description: TVS DIODE 47.8VWM 77VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 19.5A
Voltage - Reverse Standoff (Typ): 47.8V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.2V
Voltage - Clamping (Max) @ Ipp: 77V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 47.8VWM 77VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 19.5A
Voltage - Reverse Standoff (Typ): 47.8V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.2V
Voltage - Clamping (Max) @ Ipp: 77V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CP647-CEN1359-CM |
Hersteller: Central Semiconductor Corp
Description: TRANS PNP DARLINGTON DIE
Description: TRANS PNP DARLINGTON DIE
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CEDM7002AE TR PBFREE |
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Hersteller: Central Semiconductor Corp
Description: MOSFET N-CH 60V 300MA SOT883L
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-883L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Description: MOSFET N-CH 60V 300MA SOT883L
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-883L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CEDM7002AE TR PBFREE |
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Hersteller: Central Semiconductor Corp
Description: MOSFET N-CH 60V 300MA SOT883L
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-883L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Description: MOSFET N-CH 60V 300MA SOT883L
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-883L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
auf Bestellung 2872 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
29+ | 0.62 EUR |
38+ | 0.47 EUR |
100+ | 0.28 EUR |
500+ | 0.26 EUR |
1000+ | 0.18 EUR |
2000+ | 0.16 EUR |
CEDM8004 TR PBFREE |
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Hersteller: Central Semiconductor Corp
Description: MOSFET P-CH 30V 450MA SOT883VL
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 430mA, 4.5V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-883VL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): 8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.88 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 25 V
Description: MOSFET P-CH 30V 450MA SOT883VL
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 430mA, 4.5V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-883VL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): 8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.88 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CEDM8004 TR PBFREE |
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Hersteller: Central Semiconductor Corp
Description: MOSFET P-CH 30V 450MA SOT883VL
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 430mA, 4.5V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-883VL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): 8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.88 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 25 V
Description: MOSFET P-CH 30V 450MA SOT883VL
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 430mA, 4.5V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-883VL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): 8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.88 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 25 V
auf Bestellung 539 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
19+ | 0.93 EUR |
22+ | 0.81 EUR |
100+ | 0.56 EUR |
500+ | 0.47 EUR |
CDM3-800 TR13 PBFREE |
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Hersteller: Central Semiconductor Corp
Description: MOSFET N-CH 800V 3A DPAK
Description: MOSFET N-CH 800V 3A DPAK
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CDM3-800 TR13 PBFREE |
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Hersteller: Central Semiconductor Corp
Description: MOSFET N-CH 800V 3A DPAK
Description: MOSFET N-CH 800V 3A DPAK
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
CMLDM8120G TR PBFREE |
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Hersteller: Central Semiconductor Corp
Description: MOSFET P-CH 20V 860MA SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 860mA (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 950mA, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): 8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.56 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 16 V
Description: MOSFET P-CH 20V 860MA SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 860mA (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 950mA, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): 8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.56 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 16 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CMLDM8120G TR PBFREE |
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Hersteller: Central Semiconductor Corp
Description: MOSFET P-CH 20V 860MA SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 860mA (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 950mA, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): 8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.56 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 16 V
Description: MOSFET P-CH 20V 860MA SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 860mA (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 950mA, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): 8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.56 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 16 V
auf Bestellung 1439 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
23+ | 0.79 EUR |
26+ | 0.68 EUR |
100+ | 0.51 EUR |
500+ | 0.40 EUR |
1000+ | 0.31 EUR |
CDM4-650 TR13 PBFREE |
Hersteller: Central Semiconductor Corp
Description: MOSFET N-CH 650V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 2.7Ohm @ 2A, 10V
Power Dissipation (Max): 620mW (Ta), 77W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 463 pF @ 25 V
Description: MOSFET N-CH 650V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 2.7Ohm @ 2A, 10V
Power Dissipation (Max): 620mW (Ta), 77W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 463 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CDM4-650 TR13 PBFREE |
Hersteller: Central Semiconductor Corp
Description: MOSFET N-CH 650V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 2.7Ohm @ 2A, 10V
Power Dissipation (Max): 620mW (Ta), 77W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 463 pF @ 25 V
Description: MOSFET N-CH 650V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 2.7Ohm @ 2A, 10V
Power Dissipation (Max): 620mW (Ta), 77W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 463 pF @ 25 V
auf Bestellung 1446 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
7+ | 2.75 EUR |
11+ | 1.75 EUR |
100+ | 1.17 EUR |
500+ | 0.92 EUR |
1000+ | 0.84 EUR |
CEDM7001 TR PBFREE |
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Hersteller: Central Semiconductor Corp
Description: MOSFET N-CH 20V 100MA SOT883
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-883
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): 10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.57 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 9 pF @ 3 V
Description: MOSFET N-CH 20V 100MA SOT883
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-883
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): 10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.57 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 9 pF @ 3 V
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
8000+ | 0.33 EUR |
CEDM7001 TR PBFREE |
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Hersteller: Central Semiconductor Corp
Description: MOSFET N-CH 20V 100MA SOT883
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-883
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): 10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.57 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 9 pF @ 3 V
Description: MOSFET N-CH 20V 100MA SOT883
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-883
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): 10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.57 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 9 pF @ 3 V
auf Bestellung 8400 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
18+ | 1.00 EUR |
21+ | 0.87 EUR |
100+ | 0.65 EUR |
500+ | 0.51 EUR |
1000+ | 0.39 EUR |
2000+ | 0.36 EUR |
CDM7-600LR TR13 PBFREE |
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Hersteller: Central Semiconductor Corp
Description: MOSFET N-CH 600V 7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 580mOhm @ 3.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Description: MOSFET N-CH 600V 7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 580mOhm @ 3.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH