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DXT790AP5-13 DXT790AP5-13 Diodes Incorporated ds31800.pdf Description: TRANS PNP 40V 3A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 300mA, 3A
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: PowerDI™ 5
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 3.2 W
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.33 EUR
Mindestbestellmenge: 5000
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ZXMP6A17N8TC ZXMP6A17N8TC Diodes Incorporated ZXMP6A17N8.pdf Description: MOSFET P-CH 60V 2.7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V
Produkt ist nicht verfügbar
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DMN6068SE-13 DMN6068SE-13 Diodes Incorporated ds32033.pdf Description: MOSFET N-CH 60V 4.1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 68mOhm @ 12A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 502 pF @ 30 V
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4000+0.27 EUR
8000+0.26 EUR
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ZXTN617MATA ZXTN617MATA Diodes Incorporated ZXTN617MA.pdf Description: TRANS NPN 15V 4.5A DFN2020B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 280mV @ 50mA, 4.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 3A, 2V
Frequency - Transition: 120MHz
Supplier Device Package: DFN2020B-3
Part Status: Active
Current - Collector (Ic) (Max): 4.5 A
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 1.5 W
auf Bestellung 9000 Stücke:
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3000+0.24 EUR
Mindestbestellmenge: 3000
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DMN6068SE-13 DMN6068SE-13 Diodes Incorporated ds32033.pdf Description: MOSFET N-CH 60V 4.1A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 68mOhm @ 12A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 502 pF @ 30 V
auf Bestellung 18508 Stücke:
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17+1.06 EUR
25+0.71 EUR
100+0.49 EUR
500+0.43 EUR
1000+0.35 EUR
2000+0.32 EUR
Mindestbestellmenge: 17
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DXT2012P5-13 DXT2012P5-13 Diodes Incorporated ds32070.pdf Description: TRANS PNP 60V 5.5A POWERDI 5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500mA, 5A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
Frequency - Transition: 120MHz
Supplier Device Package: PowerDI™ 5
Current - Collector (Ic) (Max): 5.5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 3.2 W
auf Bestellung 5164 Stücke:
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11+1.69 EUR
17+1.05 EUR
100+0.68 EUR
500+0.53 EUR
1000+0.48 EUR
2000+0.43 EUR
Mindestbestellmenge: 11
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DXT2013P5-13 DXT2013P5-13 Diodes Incorporated ds32010.pdf Description: TRANS PNP 100V 5A POWERDI 5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 340mV @ 400mA, 4A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Frequency - Transition: 125MHz
Supplier Device Package: PowerDI™ 5
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 3.2 W
auf Bestellung 204295 Stücke:
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11+1.69 EUR
17+1.05 EUR
100+0.68 EUR
500+0.53 EUR
1000+0.48 EUR
2000+0.43 EUR
Mindestbestellmenge: 11
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DXT2014P5-13 DXT2014P5-13 Diodes Incorporated ds32009.pdf Description: TRANS PNP 140V 4A POWERDI 5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 360mV @ 300mA, 3A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PowerDI™ 5
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 3.2 W
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10+1.76 EUR
17+1.10 EUR
100+0.72 EUR
500+0.55 EUR
1000+0.50 EUR
2000+0.46 EUR
Mindestbestellmenge: 10
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DXT458P5-13 DXT458P5-13 Diodes Incorporated DXT458P5.pdf Description: TRANS NPN 400V 0.3A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 6mA, 50mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: PowerDI™ 5
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 2.8 W
auf Bestellung 474390 Stücke:
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20+0.92 EUR
29+0.61 EUR
100+0.41 EUR
500+0.32 EUR
1000+0.29 EUR
2000+0.27 EUR
Mindestbestellmenge: 20
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DXT5551P5-13 DXT5551P5-13 Diodes Incorporated DXT5551P5.pdf Description: TRANS NPN 160V 0.6A POWERDI 5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: PowerDI™ 5
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 2.25 W
auf Bestellung 293491 Stücke:
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14+1.27 EUR
23+0.79 EUR
100+0.51 EUR
500+0.39 EUR
1000+0.35 EUR
2000+0.32 EUR
Mindestbestellmenge: 14
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DXT690BP5-13 DXT690BP5-13 Diodes Incorporated ds31801.pdf Description: TRANS NPN 45V 3A POWERDI 5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 150mA, 3A
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 2V
Frequency - Transition: 150MHz
Supplier Device Package: PowerDI™ 5
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 740 mW
auf Bestellung 621 Stücke:
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12+1.55 EUR
19+0.96 EUR
100+0.63 EUR
500+0.48 EUR
Mindestbestellmenge: 12
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DXT790AP5-13 DXT790AP5-13 Diodes Incorporated ds31800.pdf Description: TRANS PNP 40V 3A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 300mA, 3A
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: PowerDI™ 5
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 3.2 W
auf Bestellung 107449 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.27 EUR
21+0.84 EUR
100+0.58 EUR
500+0.46 EUR
1000+0.42 EUR
2000+0.38 EUR
Mindestbestellmenge: 14
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ZXMP6A17N8TC ZXMP6A17N8TC Diodes Incorporated ZXMP6A17N8.pdf Description: MOSFET P-CH 60V 2.7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V
Produkt ist nicht verfügbar
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ZXTN617MATA ZXTN617MATA Diodes Incorporated ZXTN617MA.pdf Description: TRANS NPN 15V 4.5A DFN2020B-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 280mV @ 50mA, 4.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 3A, 2V
Frequency - Transition: 120MHz
Supplier Device Package: DFN2020B-3
Part Status: Active
Current - Collector (Ic) (Max): 4.5 A
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 1.5 W
auf Bestellung 10221 Stücke:
Lieferzeit 10-14 Tag (e)
21+0.84 EUR
25+0.72 EUR
100+0.50 EUR
500+0.39 EUR
1000+0.32 EUR
Mindestbestellmenge: 21
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ZXTN618MATA ZXTN618MATA Diodes Incorporated ZXTN618MA.pdf Description: TRANS NPN 20V 4.5A DFN2020B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 270mV @ 125mA, 4.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
Frequency - Transition: 140MHz
Supplier Device Package: DFN2020B-3
Part Status: Active
Current - Collector (Ic) (Max): 4.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1.5 W
auf Bestellung 267000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.29 EUR
6000+0.28 EUR
9000+0.26 EUR
30000+0.25 EUR
Mindestbestellmenge: 3000
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ZXTN619MATA ZXTN619MATA Diodes Incorporated ZXTN619MA.pdf Description: TRANS NPN 50V 4A DFN2020B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 320mV @ 200mA, 4A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Frequency - Transition: 165MHz
Supplier Device Package: DFN2020B-3
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 3 W
auf Bestellung 3855000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.24 EUR
6000+0.23 EUR
Mindestbestellmenge: 3000
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ZXTN620MATA ZXTN620MATA Diodes Incorporated ZXTN620MA.pdf Description: TRANS NPN 80V 3.5A DFN2020B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 325mV @ 300mA, 3.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 2V
Frequency - Transition: 160MHz
Supplier Device Package: DFN2020B-3
Current - Collector (Ic) (Max): 3.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 3 W
auf Bestellung 417000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.29 EUR
6000+0.28 EUR
9000+0.26 EUR
30000+0.25 EUR
Mindestbestellmenge: 3000
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ZXTP718MATA ZXTP718MATA Diodes Incorporated ZXTP718MA.pdf Description: TRANS PNP 20V 3.5A DFN2020B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 350mA, 3.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 2V
Frequency - Transition: 180MHz
Supplier Device Package: DFN2020B-3
Current - Collector (Ic) (Max): 3.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
auf Bestellung 102000 Stücke:
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3000+0.29 EUR
6000+0.28 EUR
9000+0.26 EUR
30000+0.25 EUR
Mindestbestellmenge: 3000
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ZXTP720MATA ZXTP720MATA Diodes Incorporated ZXTP720MA.pdf Description: TRANS PNP 40V 3A DFN2020B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 370mV @ 250mA, 2.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1.5A, 2V
Frequency - Transition: 190MHz
Supplier Device Package: DFN2020B-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 3 W
auf Bestellung 897000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.29 EUR
6000+0.28 EUR
9000+0.26 EUR
30000+0.25 EUR
Mindestbestellmenge: 3000
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ZXTP722MATA ZXTP722MATA Diodes Incorporated ZXTP722MA.pdf Description: TRANS PNP 70V 2.5A DFN2020B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 260mV @ 200mA, 1.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 5V
Frequency - Transition: 180MHz
Supplier Device Package: DFN2020B-3
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 70 V
Power - Max: 3 W
auf Bestellung 888000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.29 EUR
6000+0.28 EUR
9000+0.26 EUR
30000+0.25 EUR
Mindestbestellmenge: 3000
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ZXTP749FTA ZXTP749FTA Diodes Incorporated ZXTP749F.pdf Description: TRANS PNP 25V 3A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 300mA, 3A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 725 mW
auf Bestellung 3000 Stücke:
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3000+0.12 EUR
Mindestbestellmenge: 3000
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DXTP19020DP5-13 DXTP19020DP5-13 Diodes Incorporated DXTP19020DP5.pdf Description: TRANS PNP 20V 8A POWERDI 5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 275mV @ 800mA, 8A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 176MHz
Supplier Device Package: PowerDI™ 5
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
auf Bestellung 55000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.30 EUR
10000+0.28 EUR
15000+0.26 EUR
25000+0.25 EUR
Mindestbestellmenge: 5000
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DXTP19020DP5-13 DXTP19020DP5-13 Diodes Incorporated DXTP19020DP5.pdf Description: TRANS PNP 20V 8A POWERDI 5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 275mV @ 800mA, 8A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 176MHz
Supplier Device Package: PowerDI™ 5
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
auf Bestellung 58833 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.34 EUR
22+0.83 EUR
100+0.54 EUR
500+0.41 EUR
1000+0.37 EUR
2000+0.34 EUR
Mindestbestellmenge: 14
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ZXTN618MATA ZXTN618MATA Diodes Incorporated ZXTN618MA.pdf Description: TRANS NPN 20V 4.5A DFN2020B-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 270mV @ 125mA, 4.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
Frequency - Transition: 140MHz
Supplier Device Package: DFN2020B-3
Part Status: Active
Current - Collector (Ic) (Max): 4.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1.5 W
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24+0.74 EUR
100+0.51 EUR
500+0.40 EUR
1000+0.33 EUR
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ZXTN619MATA ZXTN619MATA Diodes Incorporated ZXTN619MA.pdf Description: TRANS NPN 50V 4A DFN2020B-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 320mV @ 200mA, 4A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Frequency - Transition: 165MHz
Supplier Device Package: DFN2020B-3
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 3 W
auf Bestellung 3870959 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.36 EUR
21+0.84 EUR
100+0.55 EUR
500+0.42 EUR
1000+0.38 EUR
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ZXTN620MATA ZXTN620MATA Diodes Incorporated ZXTN620MA.pdf Description: TRANS NPN 80V 3.5A DFN2020B-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 325mV @ 300mA, 3.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 2V
Frequency - Transition: 160MHz
Supplier Device Package: DFN2020B-3
Current - Collector (Ic) (Max): 3.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 3 W
auf Bestellung 419965 Stücke:
Lieferzeit 10-14 Tag (e)
21+0.86 EUR
24+0.74 EUR
100+0.51 EUR
500+0.40 EUR
1000+0.33 EUR
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ZXTP718MATA ZXTP718MATA Diodes Incorporated ZXTP718MA.pdf Description: TRANS PNP 20V 3.5A DFN2020B-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 350mA, 3.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 2V
Frequency - Transition: 180MHz
Supplier Device Package: DFN2020B-3
Current - Collector (Ic) (Max): 3.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
auf Bestellung 105359 Stücke:
Lieferzeit 10-14 Tag (e)
21+0.86 EUR
24+0.74 EUR
100+0.51 EUR
500+0.40 EUR
1000+0.33 EUR
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ZXTP722MATA ZXTP722MATA Diodes Incorporated ZXTP722MA.pdf Description: TRANS PNP 70V 2.5A DFN2020B-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 260mV @ 200mA, 1.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 5V
Frequency - Transition: 180MHz
Supplier Device Package: DFN2020B-3
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 70 V
Power - Max: 3 W
auf Bestellung 890022 Stücke:
Lieferzeit 10-14 Tag (e)
21+0.86 EUR
24+0.74 EUR
100+0.51 EUR
500+0.40 EUR
1000+0.33 EUR
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ZXTP720MATA ZXTP720MATA Diodes Incorporated ZXTP720MA.pdf Description: TRANS PNP 40V 3A DFN2020B-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 370mV @ 250mA, 2.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1.5A, 2V
Frequency - Transition: 190MHz
Supplier Device Package: DFN2020B-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 3 W
auf Bestellung 906676 Stücke:
Lieferzeit 10-14 Tag (e)
21+0.86 EUR
24+0.74 EUR
100+0.51 EUR
500+0.40 EUR
1000+0.33 EUR
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ZXTP749FTA ZXTP749FTA Diodes Incorporated ZXTP749F.pdf Description: TRANS PNP 25V 3A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 300mA, 3A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 725 mW
auf Bestellung 5744 Stücke:
Lieferzeit 10-14 Tag (e)
27+0.67 EUR
43+0.42 EUR
100+0.26 EUR
500+0.19 EUR
1000+0.17 EUR
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DMN4027SSS-13 DMN4027SSS-13 Diodes Incorporated DMN4027SSS.pdf Description: MOSFET N-CH 40V 6A 8SO
Produkt ist nicht verfügbar
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DMN4034SSD-13 DMN4034SSD-13 Diodes Incorporated DMN4034SSD.pdf Description: MOSFET 2N-CH 40V 4.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4.8A
Input Capacitance (Ciss) (Max) @ Vds: 453pF @ 20V
Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.58 EUR
5000+0.56 EUR
7500+0.53 EUR
Mindestbestellmenge: 2500
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DMN4034SSS-13 DMN4034SSS-13 Diodes Incorporated DMN4034SSS.pdf Description: MOSFET N-CH 40V 5.4A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 453 pF @ 20 V
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.39 EUR
5000+0.38 EUR
Mindestbestellmenge: 2500
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DMN6066SSD-13 DMN6066SSD-13 Diodes Incorporated DMN6066SSD.pdf Description: MOSFET 2N-CH 60V 3.3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.3A
Input Capacitance (Ciss) (Max) @ Vds: 502pF @ 30V
Rds On (Max) @ Id, Vgs: 66mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 22500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.62 EUR
5000+0.59 EUR
12500+0.57 EUR
Mindestbestellmenge: 2500
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DMN6066SSS-13 DMN6066SSS-13 Diodes Incorporated DMN6066SSS.pdf Description: MOSFET N-CH 60V 3.7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 66mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 502 pF @ 30 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.50 EUR
Mindestbestellmenge: 2500
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DMP4050SSD-13 DMP4050SSD-13 Diodes Incorporated DMP4050SSD.pdf Description: MOSFET 2P-CH 40V 4A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 674pF @ 20V
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 247500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.54 EUR
Mindestbestellmenge: 2500
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DMP4050SSS-13 DMP4050SSS-13 Diodes Incorporated DMP4050SSS.pdf Description: MOSFET P-CH 40V 4.4A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 674 pF @ 20 V
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.40 EUR
5000+0.38 EUR
Mindestbestellmenge: 2500
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DXT2010P5-13 DXT2010P5-13 Diodes Incorporated ds32011.pdf Description: TRANS NPN 60V 6A POWERDI 5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 260mV @ 300mA, 6A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
Frequency - Transition: 130MHz
Supplier Device Package: PowerDI™ 5
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 3.2 W
auf Bestellung 210000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.39 EUR
10000+0.36 EUR
15000+0.35 EUR
25000+0.34 EUR
Mindestbestellmenge: 5000
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DXT2011P5-13 DXT2011P5-13 Diodes Incorporated ds32069.pdf Description: TRANS NPN 100V 6A POWERDI 5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 220mV @ 500mA, 5A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Frequency - Transition: 130MHz
Supplier Device Package: PowerDI™ 5
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 3.2 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN4027SSS-13 DMN4027SSS-13 Diodes Incorporated DMN4027SSS.pdf Description: MOSFET N-CH 40V 6A 8SO
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN4027SSS-13 DMN4027SSS-13 Diodes Incorporated DMN4027SSS.pdf Description: MOSFET N-CH 40V 6A 8SO
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN4034SSD-13 DMN4034SSD-13 Diodes Incorporated DMN4034SSD.pdf Description: MOSFET 2N-CH 40V 4.8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4.8A
Input Capacitance (Ciss) (Max) @ Vds: 453pF @ 20V
Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 20382 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.27 EUR
13+1.40 EUR
100+0.90 EUR
500+0.71 EUR
1000+0.65 EUR
Mindestbestellmenge: 8
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DMN4034SSS-13 DMN4034SSS-13 Diodes Incorporated DMN4034SSS.pdf Description: MOSFET N-CH 40V 5.4A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 453 pF @ 20 V
auf Bestellung 48823 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.71 EUR
16+1.11 EUR
100+0.73 EUR
500+0.56 EUR
1000+0.51 EUR
Mindestbestellmenge: 11
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DMN6066SSD-13 DMN6066SSD-13 Diodes Incorporated DMN6066SSD.pdf Description: MOSFET 2N-CH 60V 3.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.3A
Input Capacitance (Ciss) (Max) @ Vds: 502pF @ 30V
Rds On (Max) @ Id, Vgs: 66mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 24979 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.46 EUR
14+1.31 EUR
100+1.02 EUR
500+0.84 EUR
1000+0.67 EUR
Mindestbestellmenge: 13
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DMN6066SSS-13 DMN6066SSS-13 Diodes Incorporated DMN6066SSS.pdf Description: MOSFET N-CH 60V 3.7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 66mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 502 pF @ 30 V
auf Bestellung 4910 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.85 EUR
15+1.20 EUR
100+0.79 EUR
500+0.61 EUR
1000+0.56 EUR
Mindestbestellmenge: 10
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DMP4050SSD-13 DMP4050SSD-13 Diodes Incorporated DMP4050SSD.pdf Description: MOSFET 2P-CH 40V 4A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 674pF @ 20V
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 249221 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.31 EUR
13+1.44 EUR
100+0.96 EUR
500+0.76 EUR
1000+0.66 EUR
Mindestbestellmenge: 8
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DMP4050SSS-13 DMP4050SSS-13 Diodes Incorporated DMP4050SSS.pdf Description: MOSFET P-CH 40V 4.4A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 674 pF @ 20 V
auf Bestellung 47019 Stücke:
Lieferzeit 10-14 Tag (e)
18+0.99 EUR
25+0.72 EUR
100+0.56 EUR
500+0.49 EUR
1000+0.47 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
DXT2010P5-13 DXT2010P5-13 Diodes Incorporated ds32011.pdf Description: TRANS NPN 60V 6A POWERDI 5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 260mV @ 300mA, 6A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
Frequency - Transition: 130MHz
Supplier Device Package: PowerDI™ 5
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 3.2 W
auf Bestellung 211147 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.69 EUR
17+1.05 EUR
100+0.68 EUR
500+0.53 EUR
1000+0.48 EUR
2000+0.43 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
DXT2011P5-13 DXT2011P5-13 Diodes Incorporated ds32069.pdf Description: TRANS NPN 100V 6A POWERDI 5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 220mV @ 500mA, 5A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Frequency - Transition: 130MHz
Supplier Device Package: PowerDI™ 5
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 3.2 W
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17+1.05 EUR
100+0.68 EUR
500+0.53 EUR
1000+0.48 EUR
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PI7C9X130DNDE PI7C9X130DNDE Diodes Incorporated PI7C9X130.pdf Description: IC INTERFACE SPECIALIZED 256BGA
Packaging: Tray
Package / Case: 256-BGA
Mounting Type: Surface Mount
Interface: SMBus (2-Wire/I2C)
Voltage - Supply: 1.8V, 3.3V
Applications: PCI-to-PCI Bridge
Supplier Device Package: 256-PBGA (17x17)
Part Status: Active
auf Bestellung 519 Stücke:
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PI7C9X20505GPBNDE PI7C9X20505GPBNDE Diodes Incorporated PI7C9X20505GP_db.pdf Description: IC INTERFACE SPECIALIZED 256BGA
Packaging: Tray
Package / Case: 256-BGA
Mounting Type: Surface Mount
Interface: PCI Express
Applications: Packet Switch, 5-Port/5-Lane
Supplier Device Package: 256-PBGA (17x17)
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PI7C9X20303SLCFDE PI7C9X20303SLCFDE Diodes Incorporated PI7C9X20303SL.pdf Description: IC INTERFACE SPECIALIZED 128LQFP
auf Bestellung 87 Stücke:
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PI7C9X20303ULAZPE PI7C9X20303ULAZPE Diodes Incorporated PI7C9X20303UL.pdf Description: IC INTERFACE SPECIALIZED 132TQFN
Produkt ist nicht verfügbar
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PI3PCIE2612-BZFE PI3PCIE2612-BZFE Diodes Incorporated PI3PCIE2612-B.pdf Description: IC MUX DISPLAYPORT/PCIE 56TQFN
Produkt ist nicht verfügbar
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PI3PCIE2415ZHE PI3PCIE2415ZHE Diodes Incorporated PI3PCIE2415.pdf Description: IC MUX/DEMUX 2X1 42TQFN
Packaging: Tray
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: PCI Express®
On-State Resistance (Max): 12Ohm
Supplier Device Package: 42-TQFN (9x3.5)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 4
Produkt ist nicht verfügbar
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PI2PCIE2422ZHE PI2PCIE2422ZHE Diodes Incorporated PI2PCIE2422.pdf Description: IC MUX/DEMUX 2X1 42TQFN
Packaging: Tray
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: PCI Express®
On-State Resistance (Max): 10Ohm
-3db Bandwidth: 2.5GHz
Supplier Device Package: 42-TQFN (9x3.5)
Voltage - Supply, Single (V+): 1.5V ~ 1.8V
Switch Circuit: SPST
Multiplexer/Demultiplexer Circuit: 8:4
Number of Channels: 8
Produkt ist nicht verfügbar
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PI3PCIE2215ZHE PI3PCIE2215ZHE Diodes Incorporated PI3PCIE2215.pdf Description: IC MUX/DEMUX 2X1 28TQFN
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PI2DBS412ZHE PI2DBS412ZHE Diodes Incorporated PI2DBS412.pdf Description: IC MUX/DEMUX 2X1 42TQFN
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PI2DBS212QE PI2DBS212QE Diodes Incorporated PI2DBS212.pdf Description: IC MUX/DEMUX 2X2 20QSOP
Features: SATA
Packaging: Tube
Package / Case: 20-SSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Telecommunications
On-State Resistance (Max): 10Ohm
-3db Bandwidth: 2GHz
Supplier Device Package: 20-QSOP
Voltage - Supply, Single (V+): 1.2V ~ 1.8V
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 2
Produkt ist nicht verfügbar
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PI3V712-AZLE PI3V712-AZLE Diodes Incorporated Description: IC MUX/DEMUX 7-CH VGA 32TQFN
Features: RGB
Packaging: Tube
Package / Case: 32-WFQFN Exposed Pad
Mounting Type: Surface Mount
Applications: Video
On-State Resistance (Max): 3Ohm (Typ)
-3db Bandwidth: 1GHz
Supplier Device Package: 32-TQFN (3x6)
Voltage - Supply, Single (V+): 3.3V
Multiplexer/Demultiplexer Circuit: 2:1, 1:2
Number of Channels: 7
Produkt ist nicht verfügbar
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DXT790AP5-13 ds31800.pdf
DXT790AP5-13
Hersteller: Diodes Incorporated
Description: TRANS PNP 40V 3A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 300mA, 3A
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: PowerDI™ 5
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 3.2 W
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.33 EUR
Mindestbestellmenge: 5000
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ZXMP6A17N8TC ZXMP6A17N8.pdf
ZXMP6A17N8TC
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 2.7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V
Produkt ist nicht verfügbar
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DMN6068SE-13 ds32033.pdf
DMN6068SE-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 4.1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 68mOhm @ 12A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 502 pF @ 30 V
auf Bestellung 16000 Stücke:
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4000+0.27 EUR
8000+0.26 EUR
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ZXTN617MATA ZXTN617MA.pdf
ZXTN617MATA
Hersteller: Diodes Incorporated
Description: TRANS NPN 15V 4.5A DFN2020B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 280mV @ 50mA, 4.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 3A, 2V
Frequency - Transition: 120MHz
Supplier Device Package: DFN2020B-3
Part Status: Active
Current - Collector (Ic) (Max): 4.5 A
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 1.5 W
auf Bestellung 9000 Stücke:
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Anzahl Preis
3000+0.24 EUR
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DMN6068SE-13 ds32033.pdf
DMN6068SE-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 4.1A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 68mOhm @ 12A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 502 pF @ 30 V
auf Bestellung 18508 Stücke:
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Anzahl Preis
17+1.06 EUR
25+0.71 EUR
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500+0.43 EUR
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DXT2012P5-13 ds32070.pdf
DXT2012P5-13
Hersteller: Diodes Incorporated
Description: TRANS PNP 60V 5.5A POWERDI 5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500mA, 5A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
Frequency - Transition: 120MHz
Supplier Device Package: PowerDI™ 5
Current - Collector (Ic) (Max): 5.5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 3.2 W
auf Bestellung 5164 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.69 EUR
17+1.05 EUR
100+0.68 EUR
500+0.53 EUR
1000+0.48 EUR
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DXT2013P5-13 ds32010.pdf
DXT2013P5-13
Hersteller: Diodes Incorporated
Description: TRANS PNP 100V 5A POWERDI 5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 340mV @ 400mA, 4A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Frequency - Transition: 125MHz
Supplier Device Package: PowerDI™ 5
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 3.2 W
auf Bestellung 204295 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.69 EUR
17+1.05 EUR
100+0.68 EUR
500+0.53 EUR
1000+0.48 EUR
2000+0.43 EUR
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DXT2014P5-13 ds32009.pdf
DXT2014P5-13
Hersteller: Diodes Incorporated
Description: TRANS PNP 140V 4A POWERDI 5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 360mV @ 300mA, 3A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PowerDI™ 5
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 3.2 W
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Anzahl Preis
10+1.76 EUR
17+1.10 EUR
100+0.72 EUR
500+0.55 EUR
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DXT458P5-13 DXT458P5.pdf
DXT458P5-13
Hersteller: Diodes Incorporated
Description: TRANS NPN 400V 0.3A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 6mA, 50mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: PowerDI™ 5
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 2.8 W
auf Bestellung 474390 Stücke:
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Anzahl Preis
20+0.92 EUR
29+0.61 EUR
100+0.41 EUR
500+0.32 EUR
1000+0.29 EUR
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DXT5551P5-13 DXT5551P5.pdf
DXT5551P5-13
Hersteller: Diodes Incorporated
Description: TRANS NPN 160V 0.6A POWERDI 5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: PowerDI™ 5
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 2.25 W
auf Bestellung 293491 Stücke:
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Anzahl Preis
14+1.27 EUR
23+0.79 EUR
100+0.51 EUR
500+0.39 EUR
1000+0.35 EUR
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DXT690BP5-13 ds31801.pdf
DXT690BP5-13
Hersteller: Diodes Incorporated
Description: TRANS NPN 45V 3A POWERDI 5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 150mA, 3A
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 2V
Frequency - Transition: 150MHz
Supplier Device Package: PowerDI™ 5
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 740 mW
auf Bestellung 621 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.55 EUR
19+0.96 EUR
100+0.63 EUR
500+0.48 EUR
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DXT790AP5-13 ds31800.pdf
DXT790AP5-13
Hersteller: Diodes Incorporated
Description: TRANS PNP 40V 3A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 300mA, 3A
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: PowerDI™ 5
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 3.2 W
auf Bestellung 107449 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.27 EUR
21+0.84 EUR
100+0.58 EUR
500+0.46 EUR
1000+0.42 EUR
2000+0.38 EUR
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ZXMP6A17N8TC ZXMP6A17N8.pdf
ZXMP6A17N8TC
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 2.7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V
Produkt ist nicht verfügbar
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ZXTN617MATA ZXTN617MA.pdf
ZXTN617MATA
Hersteller: Diodes Incorporated
Description: TRANS NPN 15V 4.5A DFN2020B-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 280mV @ 50mA, 4.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 3A, 2V
Frequency - Transition: 120MHz
Supplier Device Package: DFN2020B-3
Part Status: Active
Current - Collector (Ic) (Max): 4.5 A
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 1.5 W
auf Bestellung 10221 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+0.84 EUR
25+0.72 EUR
100+0.50 EUR
500+0.39 EUR
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Mindestbestellmenge: 21
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ZXTN618MATA ZXTN618MA.pdf
ZXTN618MATA
Hersteller: Diodes Incorporated
Description: TRANS NPN 20V 4.5A DFN2020B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 270mV @ 125mA, 4.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
Frequency - Transition: 140MHz
Supplier Device Package: DFN2020B-3
Part Status: Active
Current - Collector (Ic) (Max): 4.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1.5 W
auf Bestellung 267000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.29 EUR
6000+0.28 EUR
9000+0.26 EUR
30000+0.25 EUR
Mindestbestellmenge: 3000
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ZXTN619MATA ZXTN619MA.pdf
ZXTN619MATA
Hersteller: Diodes Incorporated
Description: TRANS NPN 50V 4A DFN2020B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 320mV @ 200mA, 4A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Frequency - Transition: 165MHz
Supplier Device Package: DFN2020B-3
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 3 W
auf Bestellung 3855000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.24 EUR
6000+0.23 EUR
Mindestbestellmenge: 3000
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ZXTN620MATA ZXTN620MA.pdf
ZXTN620MATA
Hersteller: Diodes Incorporated
Description: TRANS NPN 80V 3.5A DFN2020B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 325mV @ 300mA, 3.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 2V
Frequency - Transition: 160MHz
Supplier Device Package: DFN2020B-3
Current - Collector (Ic) (Max): 3.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 3 W
auf Bestellung 417000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.29 EUR
6000+0.28 EUR
9000+0.26 EUR
30000+0.25 EUR
Mindestbestellmenge: 3000
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ZXTP718MATA ZXTP718MA.pdf
ZXTP718MATA
Hersteller: Diodes Incorporated
Description: TRANS PNP 20V 3.5A DFN2020B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 350mA, 3.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 2V
Frequency - Transition: 180MHz
Supplier Device Package: DFN2020B-3
Current - Collector (Ic) (Max): 3.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
auf Bestellung 102000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.29 EUR
6000+0.28 EUR
9000+0.26 EUR
30000+0.25 EUR
Mindestbestellmenge: 3000
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ZXTP720MATA ZXTP720MA.pdf
ZXTP720MATA
Hersteller: Diodes Incorporated
Description: TRANS PNP 40V 3A DFN2020B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 370mV @ 250mA, 2.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1.5A, 2V
Frequency - Transition: 190MHz
Supplier Device Package: DFN2020B-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 3 W
auf Bestellung 897000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.29 EUR
6000+0.28 EUR
9000+0.26 EUR
30000+0.25 EUR
Mindestbestellmenge: 3000
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ZXTP722MATA ZXTP722MA.pdf
ZXTP722MATA
Hersteller: Diodes Incorporated
Description: TRANS PNP 70V 2.5A DFN2020B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 260mV @ 200mA, 1.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 5V
Frequency - Transition: 180MHz
Supplier Device Package: DFN2020B-3
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 70 V
Power - Max: 3 W
auf Bestellung 888000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.29 EUR
6000+0.28 EUR
9000+0.26 EUR
30000+0.25 EUR
Mindestbestellmenge: 3000
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ZXTP749FTA ZXTP749F.pdf
ZXTP749FTA
Hersteller: Diodes Incorporated
Description: TRANS PNP 25V 3A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 300mA, 3A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 725 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.12 EUR
Mindestbestellmenge: 3000
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DXTP19020DP5-13 DXTP19020DP5.pdf
DXTP19020DP5-13
Hersteller: Diodes Incorporated
Description: TRANS PNP 20V 8A POWERDI 5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 275mV @ 800mA, 8A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 176MHz
Supplier Device Package: PowerDI™ 5
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
auf Bestellung 55000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.30 EUR
10000+0.28 EUR
15000+0.26 EUR
25000+0.25 EUR
Mindestbestellmenge: 5000
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DXTP19020DP5-13 DXTP19020DP5.pdf
DXTP19020DP5-13
Hersteller: Diodes Incorporated
Description: TRANS PNP 20V 8A POWERDI 5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 275mV @ 800mA, 8A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 176MHz
Supplier Device Package: PowerDI™ 5
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
auf Bestellung 58833 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.34 EUR
22+0.83 EUR
100+0.54 EUR
500+0.41 EUR
1000+0.37 EUR
2000+0.34 EUR
Mindestbestellmenge: 14
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ZXTN618MATA ZXTN618MA.pdf
ZXTN618MATA
Hersteller: Diodes Incorporated
Description: TRANS NPN 20V 4.5A DFN2020B-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 270mV @ 125mA, 4.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
Frequency - Transition: 140MHz
Supplier Device Package: DFN2020B-3
Part Status: Active
Current - Collector (Ic) (Max): 4.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1.5 W
auf Bestellung 269984 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+0.86 EUR
24+0.74 EUR
100+0.51 EUR
500+0.40 EUR
1000+0.33 EUR
Mindestbestellmenge: 21
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ZXTN619MATA ZXTN619MA.pdf
ZXTN619MATA
Hersteller: Diodes Incorporated
Description: TRANS NPN 50V 4A DFN2020B-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 320mV @ 200mA, 4A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Frequency - Transition: 165MHz
Supplier Device Package: DFN2020B-3
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 3 W
auf Bestellung 3870959 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.36 EUR
21+0.84 EUR
100+0.55 EUR
500+0.42 EUR
1000+0.38 EUR
Mindestbestellmenge: 13
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ZXTN620MATA ZXTN620MA.pdf
ZXTN620MATA
Hersteller: Diodes Incorporated
Description: TRANS NPN 80V 3.5A DFN2020B-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 325mV @ 300mA, 3.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 2V
Frequency - Transition: 160MHz
Supplier Device Package: DFN2020B-3
Current - Collector (Ic) (Max): 3.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 3 W
auf Bestellung 419965 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+0.86 EUR
24+0.74 EUR
100+0.51 EUR
500+0.40 EUR
1000+0.33 EUR
Mindestbestellmenge: 21
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ZXTP718MATA ZXTP718MA.pdf
ZXTP718MATA
Hersteller: Diodes Incorporated
Description: TRANS PNP 20V 3.5A DFN2020B-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 350mA, 3.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 2V
Frequency - Transition: 180MHz
Supplier Device Package: DFN2020B-3
Current - Collector (Ic) (Max): 3.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
auf Bestellung 105359 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+0.86 EUR
24+0.74 EUR
100+0.51 EUR
500+0.40 EUR
1000+0.33 EUR
Mindestbestellmenge: 21
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ZXTP722MATA ZXTP722MA.pdf
ZXTP722MATA
Hersteller: Diodes Incorporated
Description: TRANS PNP 70V 2.5A DFN2020B-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 260mV @ 200mA, 1.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 5V
Frequency - Transition: 180MHz
Supplier Device Package: DFN2020B-3
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 70 V
Power - Max: 3 W
auf Bestellung 890022 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+0.86 EUR
24+0.74 EUR
100+0.51 EUR
500+0.40 EUR
1000+0.33 EUR
Mindestbestellmenge: 21
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ZXTP720MATA ZXTP720MA.pdf
ZXTP720MATA
Hersteller: Diodes Incorporated
Description: TRANS PNP 40V 3A DFN2020B-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 370mV @ 250mA, 2.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1.5A, 2V
Frequency - Transition: 190MHz
Supplier Device Package: DFN2020B-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 3 W
auf Bestellung 906676 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+0.86 EUR
24+0.74 EUR
100+0.51 EUR
500+0.40 EUR
1000+0.33 EUR
Mindestbestellmenge: 21
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ZXTP749FTA ZXTP749F.pdf
ZXTP749FTA
Hersteller: Diodes Incorporated
Description: TRANS PNP 25V 3A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 300mA, 3A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 725 mW
auf Bestellung 5744 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
27+0.67 EUR
43+0.42 EUR
100+0.26 EUR
500+0.19 EUR
1000+0.17 EUR
Mindestbestellmenge: 27
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DMN4027SSS-13 DMN4027SSS.pdf
DMN4027SSS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 6A 8SO
Produkt ist nicht verfügbar
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DMN4034SSD-13 DMN4034SSD.pdf
DMN4034SSD-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 40V 4.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4.8A
Input Capacitance (Ciss) (Max) @ Vds: 453pF @ 20V
Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.58 EUR
5000+0.56 EUR
7500+0.53 EUR
Mindestbestellmenge: 2500
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DMN4034SSS-13 DMN4034SSS.pdf
DMN4034SSS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 5.4A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 453 pF @ 20 V
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.39 EUR
5000+0.38 EUR
Mindestbestellmenge: 2500
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DMN6066SSD-13 DMN6066SSD.pdf
DMN6066SSD-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 3.3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.3A
Input Capacitance (Ciss) (Max) @ Vds: 502pF @ 30V
Rds On (Max) @ Id, Vgs: 66mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 22500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.62 EUR
5000+0.59 EUR
12500+0.57 EUR
Mindestbestellmenge: 2500
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DMN6066SSS-13 DMN6066SSS.pdf
DMN6066SSS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 3.7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 66mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 502 pF @ 30 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.50 EUR
Mindestbestellmenge: 2500
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DMP4050SSD-13 DMP4050SSD.pdf
DMP4050SSD-13
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 40V 4A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 674pF @ 20V
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 247500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.54 EUR
Mindestbestellmenge: 2500
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DMP4050SSS-13 DMP4050SSS.pdf
DMP4050SSS-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 40V 4.4A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 674 pF @ 20 V
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.40 EUR
5000+0.38 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
DXT2010P5-13 ds32011.pdf
DXT2010P5-13
Hersteller: Diodes Incorporated
Description: TRANS NPN 60V 6A POWERDI 5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 260mV @ 300mA, 6A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
Frequency - Transition: 130MHz
Supplier Device Package: PowerDI™ 5
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 3.2 W
auf Bestellung 210000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.39 EUR
10000+0.36 EUR
15000+0.35 EUR
25000+0.34 EUR
Mindestbestellmenge: 5000
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DXT2011P5-13 ds32069.pdf
DXT2011P5-13
Hersteller: Diodes Incorporated
Description: TRANS NPN 100V 6A POWERDI 5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 220mV @ 500mA, 5A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Frequency - Transition: 130MHz
Supplier Device Package: PowerDI™ 5
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 3.2 W
Produkt ist nicht verfügbar
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DMN4027SSS-13 DMN4027SSS.pdf
DMN4027SSS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 6A 8SO
Produkt ist nicht verfügbar
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DMN4027SSS-13 DMN4027SSS.pdf
DMN4027SSS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 6A 8SO
Produkt ist nicht verfügbar
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DMN4034SSD-13 DMN4034SSD.pdf
DMN4034SSD-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 40V 4.8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4.8A
Input Capacitance (Ciss) (Max) @ Vds: 453pF @ 20V
Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 20382 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.27 EUR
13+1.40 EUR
100+0.90 EUR
500+0.71 EUR
1000+0.65 EUR
Mindestbestellmenge: 8
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DMN4034SSS-13 DMN4034SSS.pdf
DMN4034SSS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 5.4A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 453 pF @ 20 V
auf Bestellung 48823 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.71 EUR
16+1.11 EUR
100+0.73 EUR
500+0.56 EUR
1000+0.51 EUR
Mindestbestellmenge: 11
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DMN6066SSD-13 DMN6066SSD.pdf
DMN6066SSD-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 3.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.3A
Input Capacitance (Ciss) (Max) @ Vds: 502pF @ 30V
Rds On (Max) @ Id, Vgs: 66mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 24979 Stücke:
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Anzahl Preis
13+1.46 EUR
14+1.31 EUR
100+1.02 EUR
500+0.84 EUR
1000+0.67 EUR
Mindestbestellmenge: 13
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DMN6066SSS-13 DMN6066SSS.pdf
DMN6066SSS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 3.7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 66mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 502 pF @ 30 V
auf Bestellung 4910 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.85 EUR
15+1.20 EUR
100+0.79 EUR
500+0.61 EUR
1000+0.56 EUR
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DMP4050SSD-13 DMP4050SSD.pdf
DMP4050SSD-13
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 40V 4A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 674pF @ 20V
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 249221 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.31 EUR
13+1.44 EUR
100+0.96 EUR
500+0.76 EUR
1000+0.66 EUR
Mindestbestellmenge: 8
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DMP4050SSS-13 DMP4050SSS.pdf
DMP4050SSS-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 40V 4.4A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 674 pF @ 20 V
auf Bestellung 47019 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+0.99 EUR
25+0.72 EUR
100+0.56 EUR
500+0.49 EUR
1000+0.47 EUR
Mindestbestellmenge: 18
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DXT2010P5-13 ds32011.pdf
DXT2010P5-13
Hersteller: Diodes Incorporated
Description: TRANS NPN 60V 6A POWERDI 5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 260mV @ 300mA, 6A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
Frequency - Transition: 130MHz
Supplier Device Package: PowerDI™ 5
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 3.2 W
auf Bestellung 211147 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.69 EUR
17+1.05 EUR
100+0.68 EUR
500+0.53 EUR
1000+0.48 EUR
2000+0.43 EUR
Mindestbestellmenge: 11
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DXT2011P5-13 ds32069.pdf
DXT2011P5-13
Hersteller: Diodes Incorporated
Description: TRANS NPN 100V 6A POWERDI 5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 220mV @ 500mA, 5A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Frequency - Transition: 130MHz
Supplier Device Package: PowerDI™ 5
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 3.2 W
auf Bestellung 1219 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.69 EUR
17+1.05 EUR
100+0.68 EUR
500+0.53 EUR
1000+0.48 EUR
Mindestbestellmenge: 11
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PI7C9X130DNDE PI7C9X130.pdf
PI7C9X130DNDE
Hersteller: Diodes Incorporated
Description: IC INTERFACE SPECIALIZED 256BGA
Packaging: Tray
Package / Case: 256-BGA
Mounting Type: Surface Mount
Interface: SMBus (2-Wire/I2C)
Voltage - Supply: 1.8V, 3.3V
Applications: PCI-to-PCI Bridge
Supplier Device Package: 256-PBGA (17x17)
Part Status: Active
auf Bestellung 519 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+63.10 EUR
10+47.91 EUR
25+44.02 EUR
90+39.96 EUR
270+39.26 EUR
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PI7C9X20505GPBNDE PI7C9X20505GP_db.pdf
PI7C9X20505GPBNDE
Hersteller: Diodes Incorporated
Description: IC INTERFACE SPECIALIZED 256BGA
Packaging: Tray
Package / Case: 256-BGA
Mounting Type: Surface Mount
Interface: PCI Express
Applications: Packet Switch, 5-Port/5-Lane
Supplier Device Package: 256-PBGA (17x17)
auf Bestellung 40 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+29.44 EUR
10+27.06 EUR
25+25.94 EUR
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PI7C9X20303SLCFDE PI7C9X20303SL.pdf
PI7C9X20303SLCFDE
Hersteller: Diodes Incorporated
Description: IC INTERFACE SPECIALIZED 128LQFP
auf Bestellung 87 Stücke:
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PI7C9X20303ULAZPE PI7C9X20303UL.pdf
PI7C9X20303ULAZPE
Hersteller: Diodes Incorporated
Description: IC INTERFACE SPECIALIZED 132TQFN
Produkt ist nicht verfügbar
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PI3PCIE2612-BZFE PI3PCIE2612-B.pdf
PI3PCIE2612-BZFE
Hersteller: Diodes Incorporated
Description: IC MUX DISPLAYPORT/PCIE 56TQFN
Produkt ist nicht verfügbar
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PI3PCIE2415ZHE PI3PCIE2415.pdf
PI3PCIE2415ZHE
Hersteller: Diodes Incorporated
Description: IC MUX/DEMUX 2X1 42TQFN
Packaging: Tray
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: PCI Express®
On-State Resistance (Max): 12Ohm
Supplier Device Package: 42-TQFN (9x3.5)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 4
Produkt ist nicht verfügbar
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PI2PCIE2422ZHE PI2PCIE2422.pdf
PI2PCIE2422ZHE
Hersteller: Diodes Incorporated
Description: IC MUX/DEMUX 2X1 42TQFN
Packaging: Tray
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: PCI Express®
On-State Resistance (Max): 10Ohm
-3db Bandwidth: 2.5GHz
Supplier Device Package: 42-TQFN (9x3.5)
Voltage - Supply, Single (V+): 1.5V ~ 1.8V
Switch Circuit: SPST
Multiplexer/Demultiplexer Circuit: 8:4
Number of Channels: 8
Produkt ist nicht verfügbar
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PI3PCIE2215ZHE PI3PCIE2215.pdf
PI3PCIE2215ZHE
Hersteller: Diodes Incorporated
Description: IC MUX/DEMUX 2X1 28TQFN
Produkt ist nicht verfügbar
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PI2DBS412ZHE PI2DBS412.pdf
PI2DBS412ZHE
Hersteller: Diodes Incorporated
Description: IC MUX/DEMUX 2X1 42TQFN
Produkt ist nicht verfügbar
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PI2DBS212QE PI2DBS212.pdf
PI2DBS212QE
Hersteller: Diodes Incorporated
Description: IC MUX/DEMUX 2X2 20QSOP
Features: SATA
Packaging: Tube
Package / Case: 20-SSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Telecommunications
On-State Resistance (Max): 10Ohm
-3db Bandwidth: 2GHz
Supplier Device Package: 20-QSOP
Voltage - Supply, Single (V+): 1.2V ~ 1.8V
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 2
Produkt ist nicht verfügbar
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PI3V712-AZLE
PI3V712-AZLE
Hersteller: Diodes Incorporated
Description: IC MUX/DEMUX 7-CH VGA 32TQFN
Features: RGB
Packaging: Tube
Package / Case: 32-WFQFN Exposed Pad
Mounting Type: Surface Mount
Applications: Video
On-State Resistance (Max): 3Ohm (Typ)
-3db Bandwidth: 1GHz
Supplier Device Package: 32-TQFN (3x6)
Voltage - Supply, Single (V+): 3.3V
Multiplexer/Demultiplexer Circuit: 2:1, 1:2
Number of Channels: 7
Produkt ist nicht verfügbar
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