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DMP2021UFDF-7 DMP2021UFDF-7 Diodes Incorporated DMP2021UFDF.pdf Description: MOSFET P-CH 20V 9A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 7A, 4.5V
Power Dissipation (Max): 730mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 15 V
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DMN3053L-13 DMN3053L-13 Diodes Incorporated DMN3053L.pdf Description: MOSFET N-CH 30V 4A SOT23-3
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DMP2021UFDF-13 DMP2021UFDF-13 Diodes Incorporated DMP2021UFDF.pdf Description: MOSFET P-CH 20V 9A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 7A, 4.5V
Power Dissipation (Max): 730mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 15 V
Produkt ist nicht verfügbar
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1N4448WQ-7-F 1N4448WQ-7-F Diodes Incorporated 1N4448W.pdf Description: DIODE STANDARD 75V 250MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 25 nA @ 20 V
Qualification: AEC-Q101
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DMG6602SVTQ-7 DMG6602SVTQ-7 Diodes Incorporated DMG6602SVTQ_Rev1-2_Dec2014.pdf Description: MOSFET N/P-CH 30V 3.4A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 840mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.8A
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TSOT-26
Part Status: Active
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DDC143ZU-7-F DDC143ZU-7-F Diodes Incorporated DDC_XXXX_U.pdf Description: TRANS 2NPN PREBIAS 0.2W SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-363
Part Status: Active
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1N4448WQ-7-F 1N4448WQ-7-F Diodes Incorporated 1N4448W.pdf Description: DIODE STANDARD 75V 250MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 25 nA @ 20 V
Qualification: AEC-Q101
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DMG6602SVTQ-7 DMG6602SVTQ-7 Diodes Incorporated DMG6602SVTQ_Rev1-2_Dec2014.pdf Description: MOSFET N/P-CH 30V 3.4A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 840mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.8A
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TSOT-26
Part Status: Active
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DDC143ZU-7-F DDC143ZU-7-F Diodes Incorporated DDC_XXXX_U.pdf Description: TRANS 2NPN PREBIAS 0.2W SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-363
Part Status: Active
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DDC144TH-7-F DDC144TH-7-F Diodes Incorporated DDC144TH.pdf Description: TRANS 2NPN PREBIAS 0.15W SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Supplier Device Package: SOT-563
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DMN61D8LVTQ-7 DMN61D8LVTQ-7 Diodes Incorporated DMN61D8LVTQ.pdf Description: MOSFET 2N-CH 60V 0.63A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 820mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 630mA
Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSOT-26
Part Status: Active
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DMN61D8LVTQ-7 DMN61D8LVTQ-7 Diodes Incorporated DMN61D8LVTQ.pdf Description: MOSFET 2N-CH 60V 0.63A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 820mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 630mA
Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSOT-26
Part Status: Active
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DMN61D8LVTQ-13 DMN61D8LVTQ-13 Diodes Incorporated DMN61D8LVTQ.pdf Description: MOSFET 2N-CH 60V 0.63A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 820mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 630mA
Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSOT-26
Part Status: Active
Produkt ist nicht verfügbar
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DMN61D8LVT-7 DMN61D8LVT-7 Diodes Incorporated DMN61D8L-LVT.pdf Description: MOSFET 2N-CH 60V 0.63A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 820mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 630mA
Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSOT-26
Part Status: Active
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DMN61D8L-7 DMN61D8L-7 Diodes Incorporated DMN61D8L-LVT.pdf Description: MOSFET N-CH 60V 470MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 470mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Power Dissipation (Max): 390mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 12.9 pF @ 12 V
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DMN61D8LVT-7 DMN61D8LVT-7 Diodes Incorporated DMN61D8L-LVT.pdf Description: MOSFET 2N-CH 60V 0.63A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 820mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 630mA
Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSOT-26
Part Status: Active
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DMN61D8L-7 DMN61D8L-7 Diodes Incorporated DMN61D8L-LVT.pdf Description: MOSFET N-CH 60V 470MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 470mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Power Dissipation (Max): 390mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 12.9 pF @ 12 V
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PAM8905PZR PAM8905PZR Diodes Incorporated PAM8905.pdf Description: IC AMP D MONO 1.9W U-WLB1520-12
Features: Short-Circuit and Thermal Protection
Packaging: Cut Tape (CT)
Package / Case: 12-UFBGA, WLBGA
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.8V ~ 5.2V
Max Output Power x Channels @ Load: 1.9W x 1 @ 8Ohm
Supplier Device Package: U-WLB1520-12
Part Status: Active
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250+0.84 EUR
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AL3065S16-13 AL3065S16-13 Diodes Incorporated AL3065.pdf Description: IC LED DRVR BACKLIGHT SO-16
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AL1678-10BS7-13 AL1678-10BS7-13 Diodes Incorporated AL1678-20B_10B_08B.pdf Description: IC LED OFFLINE DRIVER SO-7
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AL3065S16-13 AL3065S16-13 Diodes Incorporated AL3065.pdf Description: IC LED DRVR BACKLIGHT SO-16
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AL1678-10BS7-13 AL1678-10BS7-13 Diodes Incorporated AL1678-20B_10B_08B.pdf Description: IC LED OFFLINE DRIVER SO-7
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AP22850SH8-7 AP22850SH8-7 Diodes Incorporated AP22850.pdf Description: IC PWR SWITCH P-CHAN 1:1 8WDFN
Features: Load Discharge, Power Good, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 8-VFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 21mOhm
Voltage - Load: 4.5V ~ 11V
Voltage - Supply (Vcc/Vdd): 2.5V ~ 5.5V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-WDFN (2x2)
Part Status: Active
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30000+0.23 EUR
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AP22850SH8-7 AP22850SH8-7 Diodes Incorporated AP22850.pdf Description: IC PWR SWITCH P-CHAN 1:1 8WDFN
Features: Load Discharge, Power Good, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 8-VFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 21mOhm
Voltage - Load: 4.5V ~ 11V
Voltage - Supply (Vcc/Vdd): 2.5V ~ 5.5V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-WDFN (2x2)
Part Status: Active
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APT13003DZTR-G1 APT13003DZTR-G1 Diodes Incorporated Description: TRANS NPN 450V 1.5A TO-92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 250mA, 1A
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 2V
Frequency - Transition: 4MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 1.1 W
Produkt ist nicht verfügbar
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APT13003HZTR-G1 APT13003HZTR-G1 Diodes Incorporated Description: TRANS NPN 465V 1.5A TO-92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 250mA, 1A
DC Current Gain (hFE) (Min) @ Ic, Vce: 13 @ 500mA, 2V
Frequency - Transition: 4MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 465 V
Power - Max: 1.1 W
Produkt ist nicht verfügbar
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ZTX956STZ ZTX956STZ Diodes Incorporated ZTX956.pdf Description: TRANS PNP 200V 2A E-LINE
Packaging: Cut Tape (CT)
Package / Case: E-Line-3, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 400mA, 2A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Frequency - Transition: 110MHz
Supplier Device Package: E-Line (TO-92 compatible)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 1.58 W
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ZX5T851ASTZ ZX5T851ASTZ Diodes Incorporated ZX5T851A.pdf Description: TRANS NPN 60V 4.5A E-LINE
Packaging: Cut Tape (CT)
Package / Case: E-Line-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 210mV @ 200mA, 5A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
Frequency - Transition: 130MHz
Supplier Device Package: E-Line (TO-92 compatible)
Current - Collector (Ic) (Max): 4.5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
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BAS70LP-7B BAS70LP-7B Diodes Incorporated BAS70LP.pdf Description: DIODE SCHOTT 70V 70MA X1DFN10062
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.6 ns
Technology: Schottky
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: X1-DFN1006-2
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 15 mA
Current - Reverse Leakage @ Vr: 10 µA @ 70 V
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BZT52C5V6-13-F BZT52C5V6-13-F Diodes Incorporated ds18004.pdf Description: DIODE ZENER 5.6V 370MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±7%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
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BZX84B27-7-F BZX84B27-7-F Diodes Incorporated BZX84Bxx(x).pdf Description: DIODE ZENER 27V 300MW SOT23
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BZX84B8V2-7-F BZX84B8V2-7-F Diodes Incorporated BZX84Bxxx.pdf Description: DIODE ZENER 8.2V 300MW SOT23
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DMN3190LDW-13 DMN3190LDW-13 Diodes Incorporated DMN3190LDW.pdf Description: MOSFET 2N-CH 30V 1A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 320mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1A
Input Capacitance (Ciss) (Max) @ Vds: 87pF @ 20V
Rds On (Max) @ Id, Vgs: 190mOhm @ 1.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: SOT-363
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DMP3099L-7 DMP3099L-7 Diodes Incorporated DMP3099L.pdf Description: MOSFET P-CH 30V 3.8A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.8A, 10V
Power Dissipation (Max): 1.08W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 563 pF @ 25 V
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DMP32D4S-7 DMP32D4S-7 Diodes Incorporated DMP32D4S.pdf Description: MOSFET P-CH 30V 300MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 300mA, 10V
Power Dissipation (Max): 370mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 51.16 pF @ 15 V
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ZXMC3F31DN8TA ZXMC3F31DN8TA Diodes Incorporated ZXMC3F31DN8.pdf Description: MOSFET N/P-CH 30V 6.8A/4.9A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.8A, 4.9A
Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 15V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
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ZXMC4559DN8TC ZXMC4559DN8TC Diodes Incorporated ZXMC4559DN8.pdf Description: MOSFET N/P-CH 60V 3.6A/2.6A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.6A, 2.6A
Input Capacitance (Ciss) (Max) @ Vds: 1063pF @ 30V
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
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ZXMS6005DGTA ZXMS6005DGTA Diodes Incorporated ds32247.pdf Description: IC PWR DRIVER N-CHAN 1:1 SOT223
Packaging: Cut Tape (CT)
Features: Auto Restart
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Low Side
Rds On (Typ): 150mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-223-3
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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ZXMS6006DGTA ZXMS6006DGTA Diodes Incorporated ZXMS6006DG.pdf Description: IC PWR DRIVER N-CHAN 1:1 SOT223
Packaging: Cut Tape (CT)
Features: Auto Restart
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Low Side
Rds On (Typ): 75mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Current - Output (Max): 2.8A
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-223-3
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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ZXMS6006SGTA ZXMS6006SGTA Diodes Incorporated ZXMS6006SG.pdf Description: IC PWR DRIVER N-CHAN 1:1 SOT223
Packaging: Cut Tape (CT)
Features: Auto Restart
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Low Side
Rds On (Typ): 75mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Current - Output (Max): 2.8A
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-223-3
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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ZXTP03200BGTA ZXTP03200BGTA Diodes Incorporated ZXTP03200BG.pdf Description: TRANS PNP 200V 2A SOT223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 275mV @ 400mA, 2A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Frequency - Transition: 105MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 1.25 W
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ZXTR2005Z-7 ZXTR2005Z-7 Diodes Incorporated ZXTR2005Z.pdf Description: IC REG LINEAR 5V 38MA SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 38mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 500 µA
Voltage - Input (Max): 100V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 45dB (100Hz)
Current - Supply (Max): 900 µA
Grade: Automotive
Qualification: AEC-Q101
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1SMB5927B-13 1SMB5927B-13 Diodes Incorporated ds32125.pdf Description: DIODE ZENER 12V 550MW SMB
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 6.5 Ohms
Supplier Device Package: SMB
Part Status: Active
Power - Max: 550 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V
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1SMB5930B-13 1SMB5930B-13 Diodes Incorporated ds32125.pdf Description: DIODE ZENER 16V 550MW SMB
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SMB
Part Status: Active
Power - Max: 550 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 12.2 V
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1SMB5932B-13 1SMB5932B-13 Diodes Incorporated ds32125.pdf Description: DIODE ZENER 20V 550MW SMB
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: SMB
Part Status: Active
Power - Max: 550 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 15.2 V
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1SMB5937B-13 1SMB5937B-13 Diodes Incorporated ds32125.pdf Description: DIODE ZENER 33V 550MW SMB
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 33 Ohms
Supplier Device Package: SMB
Part Status: Active
Power - Max: 550 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 25.1 V
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2DB1184Q-13 2DB1184Q-13 Diodes Incorporated ds31504.pdf Description: TRANS PNP 50V 3A TO-252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V
Frequency - Transition: 110MHz
Supplier Device Package: TO-252-3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 15 W
Grade: Automotive
Qualification: AEC-Q101
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BC847B-13-F BC847B-13-F Diodes Incorporated ds11108.pdf Description: TRANS NPN 45V 0.1A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 450 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 310 mW
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BZT52C20-13-F BZT52C20-13-F Diodes Incorporated ds18004.pdf Description: DIODE ZENER 20V 370MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
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BZT52C2V7-13-F BZT52C2V7-13-F Diodes Incorporated ds18004.pdf Description: DIODE ZENER 2.7V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±7.41%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
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BZT52C3V6-13-F BZT52C3V6-13-F Diodes Incorporated ds18004.pdf Description: DIODE ZENER 3.6V 370MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5.56%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
auf Bestellung 59750 Stücke:
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BZT52C8V2-13-F BZT52C8V2-13-F Diodes Incorporated ds18004.pdf Description: DIODE ZENER 8.2V 370MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
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DCX52-16-13 DCX52-16-13 Diodes Incorporated ds31155.pdf Description: TRANS PNP 60V 1A SOT89-3
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DDZX6V8C-13 DDZX6V8C-13 Diodes Incorporated ds30408.pdf Description: DIODE ZENER 6.8V 300MW SOT23
Packaging: Cut Tape (CT)
Tolerance: ±2.56%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 5 V
Produkt ist nicht verfügbar
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DMC3032LSD-13 DMC3032LSD-13 Diodes Incorporated ds32153.pdf Description: MOSFET N/P-CH 30V 8.1A/7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.1A, 7A
Input Capacitance (Ciss) (Max) @ Vds: 404.5pF @ 15V
Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SO
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DMG4812SSS-13 DMG4812SSS-13 Diodes Incorporated DMG4812SSS.pdf Description: MOSFET N-CH 30V 8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10.7A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 1.54W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1849 pF @ 15 V
Produkt ist nicht verfügbar
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DMG7702SFG-13 DMG7702SFG-13 Diodes Incorporated DMG7702SFG.pdf Description: MOSFET N-CH 30V 12A POWERDI3333
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DMG9933USD-13 DMG9933USD-13 Diodes Incorporated DMG9933USD.pdf Description: MOSFET 2P-CH 20V 4.6A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.15W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.6A
Input Capacitance (Ciss) (Max) @ Vds: 608.4pF @ 6V
Rds On (Max) @ Id, Vgs: 75mOhm @ 4.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
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DMN2050LFDB-13 DMN2050LFDB-13 Diodes Incorporated DMN2050LFDB.pdf Description: MOSFET 2N-CH 20V 3.3A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 730mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.3A
Input Capacitance (Ciss) (Max) @ Vds: 389pF @ 10V
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
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DMN3018SFG-13 DMN3018SFG-13 Diodes Incorporated DMN3018SFG.pdf Description: MOSFET N-CH 30V 8.5A PWRDI3333-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 697 pF @ 15 V
auf Bestellung 46360 Stücke:
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DMP2021UFDF-7 DMP2021UFDF.pdf
DMP2021UFDF-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 9A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 7A, 4.5V
Power Dissipation (Max): 730mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 15 V
auf Bestellung 62684 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.62 EUR
16+1.14 EUR
100+0.73 EUR
500+0.57 EUR
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DMN3053L-13 DMN3053L.pdf
DMN3053L-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 4A SOT23-3
Produkt ist nicht verfügbar
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DMP2021UFDF-13 DMP2021UFDF.pdf
DMP2021UFDF-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 9A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 7A, 4.5V
Power Dissipation (Max): 730mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 15 V
Produkt ist nicht verfügbar
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1N4448WQ-7-F 1N4448W.pdf
1N4448WQ-7-F
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 75V 250MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 25 nA @ 20 V
Qualification: AEC-Q101
auf Bestellung 38500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.05 EUR
6000+0.045 EUR
9000+0.041 EUR
15000+0.04 EUR
30000+0.039 EUR
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DMG6602SVTQ-7 DMG6602SVTQ_Rev1-2_Dec2014.pdf
DMG6602SVTQ-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 3.4A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 840mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.8A
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TSOT-26
Part Status: Active
auf Bestellung 1257000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.13 EUR
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DDC143ZU-7-F DDC_XXXX_U.pdf
DDC143ZU-7-F
Hersteller: Diodes Incorporated
Description: TRANS 2NPN PREBIAS 0.2W SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 72000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.19 EUR
6000+0.17 EUR
15000+0.16 EUR
21000+0.15 EUR
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1N4448WQ-7-F 1N4448W.pdf
1N4448WQ-7-F
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 75V 250MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 25 nA @ 20 V
Qualification: AEC-Q101
auf Bestellung 38641 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
112+0.16 EUR
239+0.074 EUR
241+0.073 EUR
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DMG6602SVTQ-7 DMG6602SVTQ_Rev1-2_Dec2014.pdf
DMG6602SVTQ-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 3.4A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 840mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.8A
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TSOT-26
Part Status: Active
auf Bestellung 1259051 Stücke:
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Anzahl Preis
22+0.81 EUR
36+0.5 EUR
100+0.22 EUR
500+0.19 EUR
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DDC143ZU-7-F DDC_XXXX_U.pdf
DDC143ZU-7-F
Hersteller: Diodes Incorporated
Description: TRANS 2NPN PREBIAS 0.2W SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 72768 Stücke:
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Anzahl Preis
21+0.86 EUR
34+0.53 EUR
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500+0.25 EUR
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DDC144TH-7-F DDC144TH.pdf
DDC144TH-7-F
Hersteller: Diodes Incorporated
Description: TRANS 2NPN PREBIAS 0.15W SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Supplier Device Package: SOT-563
auf Bestellung 170471 Stücke:
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26+0.69 EUR
34+0.52 EUR
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500+0.29 EUR
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DMN61D8LVTQ-7 DMN61D8LVTQ.pdf
DMN61D8LVTQ-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.63A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 820mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 630mA
Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSOT-26
Part Status: Active
auf Bestellung 1101000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.22 EUR
9000+0.21 EUR
15000+0.17 EUR
30000+0.16 EUR
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DMN61D8LVTQ-7 DMN61D8LVTQ.pdf
DMN61D8LVTQ-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.63A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 820mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 630mA
Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSOT-26
Part Status: Active
auf Bestellung 1102215 Stücke:
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Anzahl Preis
17+1.04 EUR
38+0.46 EUR
100+0.38 EUR
500+0.29 EUR
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DMN61D8LVTQ-13 DMN61D8LVTQ.pdf
DMN61D8LVTQ-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.63A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 820mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 630mA
Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSOT-26
Part Status: Active
Produkt ist nicht verfügbar
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DMN61D8LVT-7 DMN61D8L-LVT.pdf
DMN61D8LVT-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.63A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 820mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 630mA
Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSOT-26
Part Status: Active
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.3 EUR
6000+0.27 EUR
9000+0.26 EUR
15000+0.25 EUR
21000+0.24 EUR
Mindestbestellmenge: 3000
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DMN61D8L-7 DMN61D8L-LVT.pdf
DMN61D8L-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 470MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 470mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Power Dissipation (Max): 390mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 12.9 pF @ 12 V
auf Bestellung 459000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.22 EUR
6000+0.2 EUR
9000+0.19 EUR
21000+0.18 EUR
Mindestbestellmenge: 3000
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DMN61D8LVT-7 DMN61D8L-LVT.pdf
DMN61D8LVT-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.63A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 820mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 630mA
Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSOT-26
Part Status: Active
auf Bestellung 62906 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.27 EUR
23+0.78 EUR
100+0.51 EUR
500+0.39 EUR
1000+0.35 EUR
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DMN61D8L-7 DMN61D8L-LVT.pdf
DMN61D8L-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 470MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 470mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Power Dissipation (Max): 390mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 12.9 pF @ 12 V
auf Bestellung 459941 Stücke:
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Anzahl Preis
20+0.9 EUR
34+0.53 EUR
100+0.41 EUR
500+0.31 EUR
1000+0.28 EUR
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PAM8905PZR PAM8905.pdf
PAM8905PZR
Hersteller: Diodes Incorporated
Description: IC AMP D MONO 1.9W U-WLB1520-12
Features: Short-Circuit and Thermal Protection
Packaging: Cut Tape (CT)
Package / Case: 12-UFBGA, WLBGA
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.8V ~ 5.2V
Max Output Power x Channels @ Load: 1.9W x 1 @ 8Ohm
Supplier Device Package: U-WLB1520-12
Part Status: Active
auf Bestellung 2954 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.45 EUR
12+1.5 EUR
25+1.26 EUR
100+0.98 EUR
250+0.84 EUR
500+0.76 EUR
1000+0.68 EUR
Mindestbestellmenge: 8
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AL3065S16-13 AL3065.pdf
AL3065S16-13
Hersteller: Diodes Incorporated
Description: IC LED DRVR BACKLIGHT SO-16
auf Bestellung 15000 Stücke:
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AL1678-10BS7-13 AL1678-20B_10B_08B.pdf
AL1678-10BS7-13
Hersteller: Diodes Incorporated
Description: IC LED OFFLINE DRIVER SO-7
Produkt ist nicht verfügbar
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AL3065S16-13 AL3065.pdf
AL3065S16-13
Hersteller: Diodes Incorporated
Description: IC LED DRVR BACKLIGHT SO-16
auf Bestellung 17210 Stücke:
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AL1678-10BS7-13 AL1678-20B_10B_08B.pdf
AL1678-10BS7-13
Hersteller: Diodes Incorporated
Description: IC LED OFFLINE DRIVER SO-7
auf Bestellung 3995 Stücke:
Lieferzeit 10-14 Tag (e)
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AP22850SH8-7 AP22850.pdf
AP22850SH8-7
Hersteller: Diodes Incorporated
Description: IC PWR SWITCH P-CHAN 1:1 8WDFN
Features: Load Discharge, Power Good, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 8-VFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 21mOhm
Voltage - Load: 4.5V ~ 11V
Voltage - Supply (Vcc/Vdd): 2.5V ~ 5.5V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-WDFN (2x2)
Part Status: Active
auf Bestellung 126000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.27 EUR
6000+0.26 EUR
15000+0.24 EUR
30000+0.23 EUR
75000+0.22 EUR
Mindestbestellmenge: 3000
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AP22850SH8-7 AP22850.pdf
AP22850SH8-7
Hersteller: Diodes Incorporated
Description: IC PWR SWITCH P-CHAN 1:1 8WDFN
Features: Load Discharge, Power Good, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 8-VFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 21mOhm
Voltage - Load: 4.5V ~ 11V
Voltage - Supply (Vcc/Vdd): 2.5V ~ 5.5V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-WDFN (2x2)
Part Status: Active
auf Bestellung 129263 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.77 EUR
27+0.66 EUR
29+0.62 EUR
100+0.49 EUR
250+0.46 EUR
500+0.39 EUR
1000+0.3 EUR
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APT13003DZTR-G1
APT13003DZTR-G1
Hersteller: Diodes Incorporated
Description: TRANS NPN 450V 1.5A TO-92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 250mA, 1A
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 2V
Frequency - Transition: 4MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 1.1 W
Produkt ist nicht verfügbar
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APT13003HZTR-G1
APT13003HZTR-G1
Hersteller: Diodes Incorporated
Description: TRANS NPN 465V 1.5A TO-92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 250mA, 1A
DC Current Gain (hFE) (Min) @ Ic, Vce: 13 @ 500mA, 2V
Frequency - Transition: 4MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 465 V
Power - Max: 1.1 W
Produkt ist nicht verfügbar
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ZTX956STZ ZTX956.pdf
ZTX956STZ
Hersteller: Diodes Incorporated
Description: TRANS PNP 200V 2A E-LINE
Packaging: Cut Tape (CT)
Package / Case: E-Line-3, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 400mA, 2A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Frequency - Transition: 110MHz
Supplier Device Package: E-Line (TO-92 compatible)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 1.58 W
auf Bestellung 3850 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+2.99 EUR
10+1.9 EUR
100+1.27 EUR
500+1.01 EUR
1000+0.92 EUR
Mindestbestellmenge: 6
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ZX5T851ASTZ ZX5T851A.pdf
ZX5T851ASTZ
Hersteller: Diodes Incorporated
Description: TRANS NPN 60V 4.5A E-LINE
Packaging: Cut Tape (CT)
Package / Case: E-Line-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 210mV @ 200mA, 5A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
Frequency - Transition: 130MHz
Supplier Device Package: E-Line (TO-92 compatible)
Current - Collector (Ic) (Max): 4.5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.8 EUR
13+1.46 EUR
100+1.14 EUR
500+0.96 EUR
1000+0.79 EUR
Mindestbestellmenge: 10
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BAS70LP-7B BAS70LP.pdf
BAS70LP-7B
Hersteller: Diodes Incorporated
Description: DIODE SCHOTT 70V 70MA X1DFN10062
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.6 ns
Technology: Schottky
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: X1-DFN1006-2
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 15 mA
Current - Reverse Leakage @ Vr: 10 µA @ 70 V
auf Bestellung 867260 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
33+0.55 EUR
46+0.39 EUR
100+0.2 EUR
500+0.14 EUR
1000+0.13 EUR
2000+0.11 EUR
5000+0.097 EUR
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BZT52C5V6-13-F ds18004.pdf
BZT52C5V6-13-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 5.6V 370MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±7%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
auf Bestellung 314589 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
91+0.19 EUR
150+0.12 EUR
394+0.045 EUR
500+0.042 EUR
1000+0.039 EUR
Mindestbestellmenge: 91
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BZX84B27-7-F BZX84Bxx(x).pdf
BZX84B27-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 27V 300MW SOT23
Produkt ist nicht verfügbar
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BZX84B8V2-7-F BZX84Bxxx.pdf
BZX84B8V2-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 8.2V 300MW SOT23
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
63+0.28 EUR
Mindestbestellmenge: 63
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DMN3190LDW-13 DMN3190LDW.pdf
DMN3190LDW-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 1A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 320mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1A
Input Capacitance (Ciss) (Max) @ Vds: 87pF @ 20V
Rds On (Max) @ Id, Vgs: 190mOhm @ 1.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: SOT-363
auf Bestellung 311796 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
29+0.62 EUR
46+0.39 EUR
100+0.24 EUR
500+0.18 EUR
1000+0.16 EUR
2000+0.14 EUR
5000+0.12 EUR
Mindestbestellmenge: 29
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DMP3099L-7 DMP3099L.pdf
DMP3099L-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 3.8A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.8A, 10V
Power Dissipation (Max): 1.08W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 563 pF @ 25 V
auf Bestellung 314693 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
42+0.42 EUR
81+0.22 EUR
141+0.13 EUR
500+0.12 EUR
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DMP32D4S-7 DMP32D4S.pdf
DMP32D4S-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 300MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 300mA, 10V
Power Dissipation (Max): 370mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 51.16 pF @ 15 V
auf Bestellung 66050 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
27+0.67 EUR
44+0.4 EUR
100+0.26 EUR
500+0.19 EUR
1000+0.16 EUR
Mindestbestellmenge: 27
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ZXMC3F31DN8TA ZXMC3F31DN8.pdf
ZXMC3F31DN8TA
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 6.8A/4.9A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.8A, 4.9A
Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 15V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
auf Bestellung 23500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.85 EUR
16+1.15 EUR
100+0.76 EUR
Mindestbestellmenge: 10
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ZXMC4559DN8TC ZXMC4559DN8.pdf
ZXMC4559DN8TC
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 60V 3.6A/2.6A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.6A, 2.6A
Input Capacitance (Ciss) (Max) @ Vds: 1063pF @ 30V
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar
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ZXMS6005DGTA ds32247.pdf
ZXMS6005DGTA
Hersteller: Diodes Incorporated
Description: IC PWR DRIVER N-CHAN 1:1 SOT223
Packaging: Cut Tape (CT)
Features: Auto Restart
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Low Side
Rds On (Typ): 150mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-223-3
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 38312 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.94 EUR
14+1.31 EUR
100+0.92 EUR
500+0.8 EUR
Mindestbestellmenge: 10
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ZXMS6006DGTA ZXMS6006DG.pdf
ZXMS6006DGTA
Hersteller: Diodes Incorporated
Description: IC PWR DRIVER N-CHAN 1:1 SOT223
Packaging: Cut Tape (CT)
Features: Auto Restart
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Low Side
Rds On (Typ): 75mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Current - Output (Max): 2.8A
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-223-3
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 17578 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.31 EUR
10+1.88 EUR
100+1.13 EUR
500+1.02 EUR
Mindestbestellmenge: 8
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ZXMS6006SGTA ZXMS6006SG.pdf
ZXMS6006SGTA
Hersteller: Diodes Incorporated
Description: IC PWR DRIVER N-CHAN 1:1 SOT223
Packaging: Cut Tape (CT)
Features: Auto Restart
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Low Side
Rds On (Typ): 75mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Current - Output (Max): 2.8A
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-223-3
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 49959 Stücke:
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6+3.4 EUR
10+2.16 EUR
100+1.46 EUR
500+1.16 EUR
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ZXTP03200BGTA ZXTP03200BG.pdf
ZXTP03200BGTA
Hersteller: Diodes Incorporated
Description: TRANS PNP 200V 2A SOT223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 275mV @ 400mA, 2A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Frequency - Transition: 105MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 1.25 W
auf Bestellung 26545 Stücke:
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ZXTR2005Z-7 ZXTR2005Z.pdf
ZXTR2005Z-7
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 5V 38MA SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 38mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 500 µA
Voltage - Input (Max): 100V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 45dB (100Hz)
Current - Supply (Max): 900 µA
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 89263 Stücke:
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13+1.43 EUR
21+0.87 EUR
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1SMB5927B-13 ds32125.pdf
1SMB5927B-13
Hersteller: Diodes Incorporated
Description: DIODE ZENER 12V 550MW SMB
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 6.5 Ohms
Supplier Device Package: SMB
Part Status: Active
Power - Max: 550 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V
auf Bestellung 317124 Stücke:
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28+0.65 EUR
41+0.44 EUR
100+0.3 EUR
500+0.23 EUR
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1SMB5930B-13 ds32125.pdf
1SMB5930B-13
Hersteller: Diodes Incorporated
Description: DIODE ZENER 16V 550MW SMB
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SMB
Part Status: Active
Power - Max: 550 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 12.2 V
auf Bestellung 179971 Stücke:
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25+0.7 EUR
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1SMB5932B-13 ds32125.pdf
1SMB5932B-13
Hersteller: Diodes Incorporated
Description: DIODE ZENER 20V 550MW SMB
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: SMB
Part Status: Active
Power - Max: 550 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 15.2 V
auf Bestellung 102922 Stücke:
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25+0.7 EUR
38+0.47 EUR
100+0.32 EUR
500+0.25 EUR
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1SMB5937B-13 ds32125.pdf
1SMB5937B-13
Hersteller: Diodes Incorporated
Description: DIODE ZENER 33V 550MW SMB
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 33 Ohms
Supplier Device Package: SMB
Part Status: Active
Power - Max: 550 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 25.1 V
auf Bestellung 90943 Stücke:
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25+0.7 EUR
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2DB1184Q-13 ds31504.pdf
2DB1184Q-13
Hersteller: Diodes Incorporated
Description: TRANS PNP 50V 3A TO-252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V
Frequency - Transition: 110MHz
Supplier Device Package: TO-252-3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 15 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 14271 Stücke:
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Anzahl Preis
12+1.48 EUR
20+0.92 EUR
100+0.6 EUR
500+0.46 EUR
1000+0.41 EUR
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BC847B-13-F ds11108.pdf
BC847B-13-F
Hersteller: Diodes Incorporated
Description: TRANS NPN 45V 0.1A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 450 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 310 mW
auf Bestellung 2012414 Stücke:
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Anzahl Preis
67+0.26 EUR
108+0.16 EUR
176+0.1 EUR
500+0.073 EUR
1000+0.064 EUR
2000+0.057 EUR
5000+0.048 EUR
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BZT52C20-13-F ds18004.pdf
BZT52C20-13-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 20V 370MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
auf Bestellung 96090 Stücke:
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Anzahl Preis
91+0.19 EUR
124+0.14 EUR
328+0.054 EUR
500+0.05 EUR
1000+0.047 EUR
2000+0.046 EUR
5000+0.045 EUR
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BZT52C2V7-13-F ds18004.pdf
BZT52C2V7-13-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 2.7V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±7.41%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
auf Bestellung 27429 Stücke:
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Anzahl Preis
56+0.32 EUR
92+0.19 EUR
150+0.12 EUR
500+0.086 EUR
1000+0.075 EUR
2000+0.067 EUR
5000+0.057 EUR
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BZT52C3V6-13-F ds18004.pdf
BZT52C3V6-13-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 3.6V 370MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5.56%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
auf Bestellung 59750 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
91+0.19 EUR
134+0.13 EUR
308+0.057 EUR
500+0.054 EUR
1000+0.05 EUR
2000+0.049 EUR
5000+0.048 EUR
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BZT52C8V2-13-F ds18004.pdf
BZT52C8V2-13-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 8.2V 370MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
auf Bestellung 160000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
92+0.19 EUR
150+0.12 EUR
500+0.086 EUR
1000+0.075 EUR
2000+0.067 EUR
5000+0.057 EUR
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DCX52-16-13 ds31155.pdf
DCX52-16-13
Hersteller: Diodes Incorporated
Description: TRANS PNP 60V 1A SOT89-3
auf Bestellung 1119 Stücke:
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28+0.63 EUR
32+0.55 EUR
100+0.41 EUR
500+0.33 EUR
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DDZX6V8C-13 ds30408.pdf
DDZX6V8C-13
Hersteller: Diodes Incorporated
Description: DIODE ZENER 6.8V 300MW SOT23
Packaging: Cut Tape (CT)
Tolerance: ±2.56%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 5 V
Produkt ist nicht verfügbar
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DMC3032LSD-13 ds32153.pdf
DMC3032LSD-13
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 8.1A/7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.1A, 7A
Input Capacitance (Ciss) (Max) @ Vds: 404.5pF @ 15V
Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SO
auf Bestellung 1712 Stücke:
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Anzahl Preis
16+1.14 EUR
25+0.71 EUR
100+0.45 EUR
500+0.35 EUR
1000+0.31 EUR
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DMG4812SSS-13 DMG4812SSS.pdf
DMG4812SSS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10.7A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 1.54W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1849 pF @ 15 V
Produkt ist nicht verfügbar
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DMG7702SFG-13 DMG7702SFG.pdf
DMG7702SFG-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 12A POWERDI3333
Produkt ist nicht verfügbar
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DMG9933USD-13 DMG9933USD.pdf
DMG9933USD-13
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 20V 4.6A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.15W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.6A
Input Capacitance (Ciss) (Max) @ Vds: 608.4pF @ 6V
Rds On (Max) @ Id, Vgs: 75mOhm @ 4.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 124726 Stücke:
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Anzahl Preis
19+0.93 EUR
29+0.62 EUR
100+0.42 EUR
500+0.32 EUR
1000+0.28 EUR
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DMN2050LFDB-13 DMN2050LFDB.pdf
DMN2050LFDB-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 3.3A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 730mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.3A
Input Capacitance (Ciss) (Max) @ Vds: 389pF @ 10V
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
auf Bestellung 75547 Stücke:
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Anzahl Preis
17+1.06 EUR
27+0.65 EUR
100+0.42 EUR
500+0.32 EUR
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DMN3018SFG-13 DMN3018SFG.pdf
DMN3018SFG-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 8.5A PWRDI3333-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 697 pF @ 15 V
auf Bestellung 46360 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.81 EUR
33+0.54 EUR
100+0.28 EUR
1000+0.26 EUR
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