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AH8503-FDC-7 AH8503-FDC-7 Diodes Incorporated AH8503.pdf Description: SENSOR HALL ANALOG 6UDFN
Packaging: Cut Tape (CT)
Features: Sleep Mode
Package / Case: 6-UDFN Exposed Pad
Output Type: Analog Voltage
Mounting Type: Surface Mount
Axis: Single
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.6V ~ 3.6V
Technology: Hall Effect
Resolution: 8 b
Sensing Range: ±40mT
Current - Output (Max): 10mA
Current - Supply (Max): 1.5mA
Supplier Device Package: U-DFN2020-6 (Type C)
Part Status: Active
auf Bestellung 30175 Stücke:
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12+1.55 EUR
14+1.31 EUR
15+1.23 EUR
25+1.14 EUR
50+1.07 EUR
100+1.02 EUR
500+0.91 EUR
1000+0.87 EUR
Mindestbestellmenge: 12
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AP65550FN-7 AP65550FN-7 Diodes Incorporated AP65550.pdf Description: IC REG BUCK ADJ 5A 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 650kHz
Voltage - Input (Max): 18V
Topology: Buck
Supplier Device Package: U-DFN3030-10
Synchronous Rectifier: Yes
Voltage - Output (Max): 6V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.76V
Produkt ist nicht verfügbar
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AP9211SA-AA-HAC-7 AP9211SA-AA-HAC-7 Diodes Incorporated AP9211.pdf Description: IC BATT PROT LI-ION 1CELL 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: U-DFN2030-6 (Type C)
Fault Protection: Over Current, Over Voltage
Part Status: Active
Produkt ist nicht verfügbar
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AP9211SA-AF-HAC-7 AP9211SA-AF-HAC-7 Diodes Incorporated AP9211.pdf Description: IC BATT PROT LI-ION 1CELL 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: U-DFN2030-6 (Type C)
Fault Protection: Over Current, Over Voltage
Part Status: Active
Produkt ist nicht verfügbar
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DLLFSD01LP3-7 DLLFSD01LP3-7 Diodes Incorporated DLLFSD01LP3.pdf Description: DIODE STD 80V 100MA X3DFN06032
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: X3-DFN0603-2
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
auf Bestellung 1753969 Stücke:
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47+0.38 EUR
58+0.31 EUR
100+0.23 EUR
250+0.19 EUR
500+0.17 EUR
1000+0.15 EUR
2500+0.13 EUR
5000+0.11 EUR
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DMN30H4D0LFDE-7 DMN30H4D0LFDE-7 Diodes Incorporated DMN30H4D0LFDE.pdf Description: MOSFET N-CH 300V 550MA 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 550mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V
Power Dissipation (Max): 630mW (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type E)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 187.3 pF @ 25 V
auf Bestellung 238416 Stücke:
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15+1.18 EUR
22+0.80 EUR
100+0.53 EUR
500+0.40 EUR
1000+0.36 EUR
Mindestbestellmenge: 15
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ZXTR2105F-7 ZXTR2105F-7 Diodes Incorporated ZXTR2105F.pdf Description: IC REG LINEAR 5V 89MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 89mA
Operating Temperature: -65°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 800 µA
Voltage - Input (Max): 60V
Number of Regulators: 1
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 46dB (100Hz)
Current - Supply (Max): 6.7 mA
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 120334 Stücke:
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14+1.32 EUR
23+0.79 EUR
27+0.65 EUR
100+0.50 EUR
250+0.42 EUR
500+0.37 EUR
1000+0.33 EUR
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AL8821SP-13 AL8821SP-13 Diodes Incorporated AL8821_NPA.pdf Description: IC LED DRIVER OFFL TRIAC 2A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 36V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1MHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 2A (Switch)
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: 8-SO-EP
Dimming: Triac
Voltage - Supply (Min): 5V
Voltage - Supply (Max): 36V
Part Status: Obsolete
Produkt ist nicht verfügbar
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AP3776BMTR-G1 AP3776BMTR-G1 Diodes Incorporated AP3776B.pdf Description: IC OFFLINE SWITCH FLYBACK 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.1V ~ 28V
Supplier Device Package: 8-SO
Fault Protection: Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 13 V
Part Status: Active
Produkt ist nicht verfügbar
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APR34309CAMPTR-G1 APR34309CAMPTR-G1 Diodes Incorporated APR34309CA.pdf Description: IC RECT CTLR AC/DC SYNCH 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V ~ 6V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 8-SO-EP
Current - Supply: 100 µA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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DMN4026SK3-13 DMN4026SK3-13 Diodes Incorporated DMN4026SK3.pdf Description: MOSFET N-CH 40V 28A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 21.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1181 pF @ 20 V
auf Bestellung 76141 Stücke:
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15+1.21 EUR
22+0.81 EUR
100+0.55 EUR
500+0.44 EUR
1000+0.40 EUR
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DMP4047SK3-13 DMP4047SK3-13 Diodes Incorporated DMP4047SK3.pdf Description: MOSFET P-CH 40V 20A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.4A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1328 pF @ 20 V
auf Bestellung 45320 Stücke:
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12+1.57 EUR
19+0.97 EUR
100+0.63 EUR
500+0.49 EUR
1000+0.44 EUR
Mindestbestellmenge: 12
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DMP4047SSD-13 DMP4047SSD-13 Diodes Incorporated DMP4047SSD.pdf Description: MOSFET 2P-CH 40V 5.1A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.1A
Input Capacitance (Ciss) (Max) @ Vds: 1154pF @ 20V
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 237497 Stücke:
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17+1.07 EUR
20+0.92 EUR
100+0.64 EUR
500+0.53 EUR
1000+0.45 EUR
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SBRT60U50CT SBRT60U50CT Diodes Incorporated SBRT60U50CT.pdf Description: DIODE ARRAY SBR 50V 30A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 30 A
Current - Reverse Leakage @ Vr: 700 µA @ 50 V
Produkt ist nicht verfügbar
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DMN3035LWN-7 DMN3035LWN-7 Diodes Incorporated DMN3035LWN.pdf Description: MOSFET 2N-CH 30V 5.5A 8VDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 770mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 399pF @ 15V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.9nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: V-DFN3020-8 (Type N)
Part Status: Active
auf Bestellung 78000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.29 EUR
6000+0.26 EUR
9000+0.25 EUR
15000+0.24 EUR
21000+0.23 EUR
Mindestbestellmenge: 3000
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DMN3053L-7 DMN3053L-7 Diodes Incorporated DMN3053L.pdf Description: MOSFET N-CH 30V 4A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 10V
Power Dissipation (Max): 760mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 676 pF @ 15 V
auf Bestellung 6000 Stücke:
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3000+0.16 EUR
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DMN6075S-7 DMN6075S-7 Diodes Incorporated DMN6075S.pdf Description: MOSFET N-CH 60V 2A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.2A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 606 pF @ 20 V
auf Bestellung 129000 Stücke:
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3000+0.09 EUR
6000+0.08 EUR
9000+0.08 EUR
15000+0.08 EUR
30000+0.08 EUR
75000+0.07 EUR
Mindestbestellmenge: 3000
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DMP2021UFDF-7 DMP2021UFDF-7 Diodes Incorporated DMP2021UFDF.pdf Description: MOSFET P-CH 20V 9A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 7A, 4.5V
Power Dissipation (Max): 730mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 15 V
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.41 EUR
Mindestbestellmenge: 3000
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DMN3016LPS-13 DMN3016LPS-13 Diodes Incorporated DMN3016LPS.pdf Description: MOSFET N-CH 30V 10.8A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 1.18W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 15 V
auf Bestellung 2874 Stücke:
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25+0.70 EUR
30+0.60 EUR
100+0.42 EUR
Mindestbestellmenge: 25
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DMN3035LWN-7 DMN3035LWN-7 Diodes Incorporated DMN3035LWN.pdf Description: MOSFET 2N-CH 30V 5.5A 8VDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 770mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 399pF @ 15V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.9nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: V-DFN3020-8 (Type N)
Part Status: Active
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15+1.21 EUR
24+0.76 EUR
100+0.49 EUR
500+0.37 EUR
1000+0.33 EUR
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DMN3053L-7 DMN3053L-7 Diodes Incorporated DMN3053L.pdf Description: MOSFET N-CH 30V 4A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 10V
Power Dissipation (Max): 760mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 676 pF @ 15 V
auf Bestellung 8659 Stücke:
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44+0.41 EUR
100+0.23 EUR
500+0.22 EUR
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DMN6075S-7 DMN6075S-7 Diodes Incorporated DMN6075S.pdf Description: MOSFET N-CH 60V 2A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.2A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 606 pF @ 20 V
auf Bestellung 130294 Stücke:
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34+0.53 EUR
54+0.33 EUR
139+0.13 EUR
Mindestbestellmenge: 34
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DMP2021UFDF-7 DMP2021UFDF-7 Diodes Incorporated DMP2021UFDF.pdf Description: MOSFET P-CH 20V 9A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 7A, 4.5V
Power Dissipation (Max): 730mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 15 V
auf Bestellung 62684 Stücke:
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11+1.62 EUR
16+1.14 EUR
100+0.73 EUR
500+0.57 EUR
1000+0.54 EUR
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DMN3053L-13 DMN3053L-13 Diodes Incorporated DMN3053L.pdf Description: MOSFET N-CH 30V 4A SOT23-3
Produkt ist nicht verfügbar
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DMP2021UFDF-13 DMP2021UFDF-13 Diodes Incorporated DMP2021UFDF.pdf Description: MOSFET P-CH 20V 9A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 7A, 4.5V
Power Dissipation (Max): 730mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 15 V
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1N4448WQ-7-F 1N4448WQ-7-F Diodes Incorporated 1N4448W.pdf Description: DIODE STANDARD 75V 250MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 25 nA @ 20 V
Qualification: AEC-Q101
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DMG6602SVTQ-7 DMG6602SVTQ-7 Diodes Incorporated DMG6602SVTQ_Rev1-2_Dec2014.pdf Description: MOSFET N/P-CH 30V 3.4A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 840mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.8A
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TSOT-26
Part Status: Active
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DDC143ZU-7-F DDC143ZU-7-F Diodes Incorporated DDC_XXXX_U.pdf Description: TRANS 2NPN PREBIAS 0.2W SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-363
Part Status: Active
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1N4448WQ-7-F 1N4448WQ-7-F Diodes Incorporated 1N4448W.pdf Description: DIODE STANDARD 75V 250MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 25 nA @ 20 V
Qualification: AEC-Q101
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DMG6602SVTQ-7 DMG6602SVTQ-7 Diodes Incorporated DMG6602SVTQ_Rev1-2_Dec2014.pdf Description: MOSFET N/P-CH 30V 3.4A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 840mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.8A
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TSOT-26
Part Status: Active
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DDC143ZU-7-F DDC143ZU-7-F Diodes Incorporated DDC_XXXX_U.pdf Description: TRANS 2NPN PREBIAS 0.2W SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-363
Part Status: Active
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DDC144TH-7-F DDC144TH-7-F Diodes Incorporated DDC144TH.pdf Description: TRANS 2NPN PREBIAS 0.15W SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Supplier Device Package: SOT-563
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DMN61D8LVTQ-7 DMN61D8LVTQ-7 Diodes Incorporated DMN61D8LVTQ.pdf Description: MOSFET 2N-CH 60V 0.63A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 820mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 630mA
Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSOT-26
Part Status: Active
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DMN61D8LVTQ-7 DMN61D8LVTQ-7 Diodes Incorporated DMN61D8LVTQ.pdf Description: MOSFET 2N-CH 60V 0.63A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 820mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 630mA
Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSOT-26
Part Status: Active
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DMN61D8LVTQ-13 DMN61D8LVTQ-13 Diodes Incorporated DMN61D8LVTQ.pdf Description: MOSFET 2N-CH 60V 0.63A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 820mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 630mA
Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSOT-26
Part Status: Active
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DMN61D8LVT-7 DMN61D8LVT-7 Diodes Incorporated DMN61D8L-LVT.pdf Description: MOSFET 2N-CH 60V 0.63A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 820mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 630mA
Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSOT-26
Part Status: Active
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DMN61D8L-7 DMN61D8L-7 Diodes Incorporated DMN61D8L-LVT.pdf Description: MOSFET N-CH 60V 470MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 470mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Power Dissipation (Max): 390mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 12.9 pF @ 12 V
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DMN61D8LVT-7 DMN61D8LVT-7 Diodes Incorporated DMN61D8L-LVT.pdf Description: MOSFET 2N-CH 60V 0.63A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 820mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 630mA
Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSOT-26
Part Status: Active
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DMN61D8L-7 DMN61D8L-7 Diodes Incorporated DMN61D8L-LVT.pdf Description: MOSFET N-CH 60V 470MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 470mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Power Dissipation (Max): 390mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 12.9 pF @ 12 V
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PAM8905PZR PAM8905PZR Diodes Incorporated PAM8905.pdf Description: IC AMP D MONO 1.9W U-WLB1520-12
Features: Short-Circuit and Thermal Protection
Packaging: Cut Tape (CT)
Package / Case: 12-UFBGA, WLBGA
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.8V ~ 5.2V
Max Output Power x Channels @ Load: 1.9W x 1 @ 8Ohm
Supplier Device Package: U-WLB1520-12
Part Status: Active
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AL3065S16-13 AL3065S16-13 Diodes Incorporated AL3065.pdf Description: IC LED DRVR BACKLIGHT SO-16
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AL1678-10BS7-13 AL1678-10BS7-13 Diodes Incorporated AL1678-20B_10B_08B.pdf Description: IC LED OFFLINE DRIVER SO-7
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AL3065S16-13 AL3065S16-13 Diodes Incorporated AL3065.pdf Description: IC LED DRVR BACKLIGHT SO-16
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AL1678-10BS7-13 AL1678-10BS7-13 Diodes Incorporated AL1678-20B_10B_08B.pdf Description: IC LED OFFLINE DRIVER SO-7
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AP22850SH8-7 AP22850SH8-7 Diodes Incorporated AP22850.pdf Description: IC PWR SWITCH P-CHAN 1:1 8WDFN
Packaging: Tape & Reel (TR)
Features: Load Discharge, Power Good, Slew Rate Controlled
Package / Case: 8-VFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 21mOhm
Voltage - Load: 4.5V ~ 11V
Voltage - Supply (Vcc/Vdd): 2.5V ~ 5.5V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-WDFN (2x2)
Part Status: Active
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AP22850SH8-7 AP22850SH8-7 Diodes Incorporated AP22850.pdf Description: IC PWR SWITCH P-CHAN 1:1 8WDFN
Packaging: Cut Tape (CT)
Features: Load Discharge, Power Good, Slew Rate Controlled
Package / Case: 8-VFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 21mOhm
Voltage - Load: 4.5V ~ 11V
Voltage - Supply (Vcc/Vdd): 2.5V ~ 5.5V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-WDFN (2x2)
Part Status: Active
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APT13003DZTR-G1 APT13003DZTR-G1 Diodes Incorporated Description: TRANS NPN 450V 1.5A TO-92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 250mA, 1A
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 2V
Frequency - Transition: 4MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 1.1 W
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APT13003HZTR-G1 APT13003HZTR-G1 Diodes Incorporated Description: TRANS NPN 465V 1.5A TO-92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 250mA, 1A
DC Current Gain (hFE) (Min) @ Ic, Vce: 13 @ 500mA, 2V
Frequency - Transition: 4MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 465 V
Power - Max: 1.1 W
Produkt ist nicht verfügbar
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ZTX956STZ ZTX956STZ Diodes Incorporated ZTX956.pdf Description: TRANS PNP 200V 2A E-LINE
Packaging: Cut Tape (CT)
Package / Case: E-Line-3, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 400mA, 2A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Frequency - Transition: 110MHz
Supplier Device Package: E-Line (TO-92 compatible)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 1.58 W
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ZX5T851ASTZ ZX5T851ASTZ Diodes Incorporated ZX5T851A.pdf Description: TRANS NPN 60V 4.5A E-LINE
Packaging: Cut Tape (CT)
Package / Case: E-Line-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 210mV @ 200mA, 5A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
Frequency - Transition: 130MHz
Supplier Device Package: E-Line (TO-92 compatible)
Current - Collector (Ic) (Max): 4.5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
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BAS70LP-7B BAS70LP-7B Diodes Incorporated BAS70LP.pdf Description: DIODE SCHOTT 70V 70MA X1DFN10062
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.6 ns
Technology: Schottky
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: X1-DFN1006-2
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 15 mA
Current - Reverse Leakage @ Vr: 10 µA @ 70 V
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BZT52C5V6-13-F BZT52C5V6-13-F Diodes Incorporated ds18004.pdf Description: DIODE ZENER 5.6V 370MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±7%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
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BZX84B27-7-F BZX84B27-7-F Diodes Incorporated BZX84Bxx(x).pdf Description: DIODE ZENER 27V 300MW SOT23
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BZX84B8V2-7-F BZX84B8V2-7-F Diodes Incorporated BZX84Bxxx.pdf Description: DIODE ZENER 8.2V 300MW SOT23
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DMN3190LDW-13 DMN3190LDW-13 Diodes Incorporated DMN3190LDW.pdf Description: MOSFET 2N-CH 30V 1A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 320mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1A
Input Capacitance (Ciss) (Max) @ Vds: 87pF @ 20V
Rds On (Max) @ Id, Vgs: 190mOhm @ 1.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: SOT-363
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DMP3099L-7 DMP3099L-7 Diodes Incorporated DMP3099L.pdf Description: MOSFET P-CH 30V 3.8A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.8A, 10V
Power Dissipation (Max): 1.08W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 563 pF @ 25 V
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DMP32D4S-7 DMP32D4S-7 Diodes Incorporated DMP32D4S.pdf Description: MOSFET P-CH 30V 300MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 300mA, 10V
Power Dissipation (Max): 370mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 51.16 pF @ 15 V
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ZXMC3F31DN8TA ZXMC3F31DN8TA Diodes Incorporated ZXMC3F31DN8.pdf Description: MOSFET N/P-CH 30V 6.8A/4.9A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.8A, 4.9A
Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 15V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
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ZXMC4559DN8TC ZXMC4559DN8TC Diodes Incorporated ZXMC4559DN8.pdf Description: MOSFET N/P-CH 60V 3.6A/2.6A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.6A, 2.6A
Input Capacitance (Ciss) (Max) @ Vds: 1063pF @ 30V
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
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ZXMS6005DGTA ZXMS6005DGTA Diodes Incorporated ds32247.pdf Description: IC PWR DRIVER N-CHAN 1:1 SOT223
Packaging: Cut Tape (CT)
Features: Auto Restart
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Low Side
Rds On (Typ): 150mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-223-3
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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AH8503-FDC-7 AH8503.pdf
AH8503-FDC-7
Hersteller: Diodes Incorporated
Description: SENSOR HALL ANALOG 6UDFN
Packaging: Cut Tape (CT)
Features: Sleep Mode
Package / Case: 6-UDFN Exposed Pad
Output Type: Analog Voltage
Mounting Type: Surface Mount
Axis: Single
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.6V ~ 3.6V
Technology: Hall Effect
Resolution: 8 b
Sensing Range: ±40mT
Current - Output (Max): 10mA
Current - Supply (Max): 1.5mA
Supplier Device Package: U-DFN2020-6 (Type C)
Part Status: Active
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AP65550FN-7 AP65550.pdf
AP65550FN-7
Hersteller: Diodes Incorporated
Description: IC REG BUCK ADJ 5A 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 650kHz
Voltage - Input (Max): 18V
Topology: Buck
Supplier Device Package: U-DFN3030-10
Synchronous Rectifier: Yes
Voltage - Output (Max): 6V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.76V
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AP9211SA-AA-HAC-7 AP9211.pdf
AP9211SA-AA-HAC-7
Hersteller: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: U-DFN2030-6 (Type C)
Fault Protection: Over Current, Over Voltage
Part Status: Active
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AP9211SA-AF-HAC-7 AP9211.pdf
AP9211SA-AF-HAC-7
Hersteller: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: U-DFN2030-6 (Type C)
Fault Protection: Over Current, Over Voltage
Part Status: Active
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DLLFSD01LP3-7 DLLFSD01LP3.pdf
DLLFSD01LP3-7
Hersteller: Diodes Incorporated
Description: DIODE STD 80V 100MA X3DFN06032
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: X3-DFN0603-2
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
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28+0.63 EUR
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DMN30H4D0LFDE-7 DMN30H4D0LFDE.pdf
DMN30H4D0LFDE-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 300V 550MA 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 550mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V
Power Dissipation (Max): 630mW (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type E)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 187.3 pF @ 25 V
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ZXTR2105F-7 ZXTR2105F.pdf
ZXTR2105F-7
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 5V 89MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 89mA
Operating Temperature: -65°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 800 µA
Voltage - Input (Max): 60V
Number of Regulators: 1
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 46dB (100Hz)
Current - Supply (Max): 6.7 mA
Grade: Automotive
Qualification: AEC-Q101
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AL8821SP-13 AL8821_NPA.pdf
AL8821SP-13
Hersteller: Diodes Incorporated
Description: IC LED DRIVER OFFL TRIAC 2A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 36V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1MHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 2A (Switch)
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: 8-SO-EP
Dimming: Triac
Voltage - Supply (Min): 5V
Voltage - Supply (Max): 36V
Part Status: Obsolete
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AP3776BMTR-G1 AP3776B.pdf
AP3776BMTR-G1
Hersteller: Diodes Incorporated
Description: IC OFFLINE SWITCH FLYBACK 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.1V ~ 28V
Supplier Device Package: 8-SO
Fault Protection: Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 13 V
Part Status: Active
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APR34309CAMPTR-G1 APR34309CA.pdf
APR34309CAMPTR-G1
Hersteller: Diodes Incorporated
Description: IC RECT CTLR AC/DC SYNCH 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V ~ 6V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 8-SO-EP
Current - Supply: 100 µA
DigiKey Programmable: Not Verified
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DMN4026SK3-13 DMN4026SK3.pdf
DMN4026SK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 28A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 21.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1181 pF @ 20 V
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DMP4047SK3-13 DMP4047SK3.pdf
DMP4047SK3-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 40V 20A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.4A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1328 pF @ 20 V
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DMP4047SSD-13 DMP4047SSD.pdf
DMP4047SSD-13
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 40V 5.1A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.1A
Input Capacitance (Ciss) (Max) @ Vds: 1154pF @ 20V
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
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SBRT60U50CT SBRT60U50CT.pdf
SBRT60U50CT
Hersteller: Diodes Incorporated
Description: DIODE ARRAY SBR 50V 30A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 30 A
Current - Reverse Leakage @ Vr: 700 µA @ 50 V
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DMN3035LWN-7 DMN3035LWN.pdf
DMN3035LWN-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 5.5A 8VDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 770mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 399pF @ 15V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.9nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: V-DFN3020-8 (Type N)
Part Status: Active
auf Bestellung 78000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.29 EUR
6000+0.26 EUR
9000+0.25 EUR
15000+0.24 EUR
21000+0.23 EUR
Mindestbestellmenge: 3000
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DMN3053L-7 DMN3053L.pdf
DMN3053L-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 4A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 10V
Power Dissipation (Max): 760mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 676 pF @ 15 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.16 EUR
Mindestbestellmenge: 3000
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DMN6075S-7 DMN6075S.pdf
DMN6075S-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 2A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.2A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 606 pF @ 20 V
auf Bestellung 129000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.09 EUR
6000+0.08 EUR
9000+0.08 EUR
15000+0.08 EUR
30000+0.08 EUR
75000+0.07 EUR
Mindestbestellmenge: 3000
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DMP2021UFDF-7 DMP2021UFDF.pdf
DMP2021UFDF-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 9A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 7A, 4.5V
Power Dissipation (Max): 730mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 15 V
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.41 EUR
Mindestbestellmenge: 3000
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DMN3016LPS-13 DMN3016LPS.pdf
DMN3016LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 10.8A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 1.18W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 15 V
auf Bestellung 2874 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.70 EUR
30+0.60 EUR
100+0.42 EUR
Mindestbestellmenge: 25
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DMN3035LWN-7 DMN3035LWN.pdf
DMN3035LWN-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 5.5A 8VDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 770mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 399pF @ 15V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.9nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: V-DFN3020-8 (Type N)
Part Status: Active
auf Bestellung 80638 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.21 EUR
24+0.76 EUR
100+0.49 EUR
500+0.37 EUR
1000+0.33 EUR
Mindestbestellmenge: 15
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DMN3053L-7 DMN3053L.pdf
DMN3053L-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 4A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 10V
Power Dissipation (Max): 760mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 676 pF @ 15 V
auf Bestellung 8659 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
30+0.60 EUR
44+0.41 EUR
100+0.23 EUR
500+0.22 EUR
Mindestbestellmenge: 30
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DMN6075S-7 DMN6075S.pdf
DMN6075S-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 2A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.2A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 606 pF @ 20 V
auf Bestellung 130294 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
54+0.33 EUR
139+0.13 EUR
Mindestbestellmenge: 34
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DMP2021UFDF-7 DMP2021UFDF.pdf
DMP2021UFDF-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 9A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 7A, 4.5V
Power Dissipation (Max): 730mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 15 V
auf Bestellung 62684 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.62 EUR
16+1.14 EUR
100+0.73 EUR
500+0.57 EUR
1000+0.54 EUR
Mindestbestellmenge: 11
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DMN3053L-13 DMN3053L.pdf
DMN3053L-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 4A SOT23-3
Produkt ist nicht verfügbar
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DMP2021UFDF-13 DMP2021UFDF.pdf
DMP2021UFDF-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 9A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 7A, 4.5V
Power Dissipation (Max): 730mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 15 V
Produkt ist nicht verfügbar
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1N4448WQ-7-F 1N4448W.pdf
1N4448WQ-7-F
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 75V 250MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 25 nA @ 20 V
Qualification: AEC-Q101
auf Bestellung 51000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.03 EUR
6000+0.03 EUR
Mindestbestellmenge: 3000
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DMG6602SVTQ-7 DMG6602SVTQ_Rev1-2_Dec2014.pdf
DMG6602SVTQ-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 3.4A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 840mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.8A
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TSOT-26
Part Status: Active
auf Bestellung 1257000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.13 EUR
Mindestbestellmenge: 3000
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DDC143ZU-7-F DDC_XXXX_U.pdf
DDC143ZU-7-F
Hersteller: Diodes Incorporated
Description: TRANS 2NPN PREBIAS 0.2W SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 72000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.19 EUR
6000+0.17 EUR
15000+0.16 EUR
21000+0.15 EUR
30000+0.14 EUR
Mindestbestellmenge: 3000
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1N4448WQ-7-F 1N4448W.pdf
1N4448WQ-7-F
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 75V 250MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 25 nA @ 20 V
Qualification: AEC-Q101
auf Bestellung 52392 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
112+0.16 EUR
228+0.08 EUR
271+0.07 EUR
500+0.06 EUR
Mindestbestellmenge: 112
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DMG6602SVTQ-7 DMG6602SVTQ_Rev1-2_Dec2014.pdf
DMG6602SVTQ-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 3.4A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 840mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.8A
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TSOT-26
Part Status: Active
auf Bestellung 1259051 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.81 EUR
36+0.50 EUR
100+0.22 EUR
500+0.19 EUR
1000+0.17 EUR
Mindestbestellmenge: 22
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DDC143ZU-7-F DDC_XXXX_U.pdf
DDC143ZU-7-F
Hersteller: Diodes Incorporated
Description: TRANS 2NPN PREBIAS 0.2W SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 72768 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+0.86 EUR
34+0.53 EUR
100+0.34 EUR
500+0.25 EUR
1000+0.23 EUR
Mindestbestellmenge: 21
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DDC144TH-7-F DDC144TH.pdf
DDC144TH-7-F
Hersteller: Diodes Incorporated
Description: TRANS 2NPN PREBIAS 0.15W SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Supplier Device Package: SOT-563
auf Bestellung 170471 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
26+0.69 EUR
34+0.52 EUR
100+0.31 EUR
500+0.29 EUR
1000+0.20 EUR
Mindestbestellmenge: 26
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DMN61D8LVTQ-7 DMN61D8LVTQ.pdf
DMN61D8LVTQ-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.63A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 820mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 630mA
Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSOT-26
Part Status: Active
auf Bestellung 1101000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.22 EUR
9000+0.21 EUR
15000+0.17 EUR
30000+0.16 EUR
Mindestbestellmenge: 3000
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DMN61D8LVTQ-7 DMN61D8LVTQ.pdf
DMN61D8LVTQ-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.63A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 820mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 630mA
Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSOT-26
Part Status: Active
auf Bestellung 1102215 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.04 EUR
38+0.46 EUR
100+0.38 EUR
500+0.29 EUR
1000+0.27 EUR
Mindestbestellmenge: 17
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DMN61D8LVTQ-13 DMN61D8LVTQ.pdf
DMN61D8LVTQ-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.63A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 820mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 630mA
Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSOT-26
Part Status: Active
Produkt ist nicht verfügbar
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DMN61D8LVT-7 DMN61D8L-LVT.pdf
DMN61D8LVT-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.63A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 820mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 630mA
Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSOT-26
Part Status: Active
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.30 EUR
6000+0.27 EUR
9000+0.26 EUR
15000+0.25 EUR
21000+0.24 EUR
Mindestbestellmenge: 3000
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DMN61D8L-7 DMN61D8L-LVT.pdf
DMN61D8L-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 470MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 470mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Power Dissipation (Max): 390mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 12.9 pF @ 12 V
auf Bestellung 459000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.22 EUR
6000+0.20 EUR
9000+0.19 EUR
21000+0.18 EUR
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DMN61D8LVT-7 DMN61D8L-LVT.pdf
DMN61D8LVT-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.63A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 820mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 630mA
Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSOT-26
Part Status: Active
auf Bestellung 62906 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.27 EUR
23+0.78 EUR
100+0.51 EUR
500+0.39 EUR
1000+0.35 EUR
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DMN61D8L-7 DMN61D8L-LVT.pdf
DMN61D8L-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 470MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 470mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Power Dissipation (Max): 390mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 12.9 pF @ 12 V
auf Bestellung 459941 Stücke:
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Anzahl Preis
20+0.90 EUR
34+0.53 EUR
100+0.41 EUR
500+0.31 EUR
1000+0.28 EUR
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PAM8905PZR PAM8905.pdf
PAM8905PZR
Hersteller: Diodes Incorporated
Description: IC AMP D MONO 1.9W U-WLB1520-12
Features: Short-Circuit and Thermal Protection
Packaging: Cut Tape (CT)
Package / Case: 12-UFBGA, WLBGA
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.8V ~ 5.2V
Max Output Power x Channels @ Load: 1.9W x 1 @ 8Ohm
Supplier Device Package: U-WLB1520-12
Part Status: Active
auf Bestellung 2954 Stücke:
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Anzahl Preis
8+2.45 EUR
12+1.50 EUR
25+1.26 EUR
100+0.98 EUR
250+0.84 EUR
500+0.76 EUR
1000+0.68 EUR
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AL3065S16-13 AL3065.pdf
AL3065S16-13
Hersteller: Diodes Incorporated
Description: IC LED DRVR BACKLIGHT SO-16
auf Bestellung 15000 Stücke:
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AL1678-10BS7-13 AL1678-20B_10B_08B.pdf
AL1678-10BS7-13
Hersteller: Diodes Incorporated
Description: IC LED OFFLINE DRIVER SO-7
Produkt ist nicht verfügbar
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AL3065S16-13 AL3065.pdf
AL3065S16-13
Hersteller: Diodes Incorporated
Description: IC LED DRVR BACKLIGHT SO-16
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AL1678-10BS7-13 AL1678-20B_10B_08B.pdf
AL1678-10BS7-13
Hersteller: Diodes Incorporated
Description: IC LED OFFLINE DRIVER SO-7
auf Bestellung 3995 Stücke:
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AP22850SH8-7 AP22850.pdf
AP22850SH8-7
Hersteller: Diodes Incorporated
Description: IC PWR SWITCH P-CHAN 1:1 8WDFN
Packaging: Tape & Reel (TR)
Features: Load Discharge, Power Good, Slew Rate Controlled
Package / Case: 8-VFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 21mOhm
Voltage - Load: 4.5V ~ 11V
Voltage - Supply (Vcc/Vdd): 2.5V ~ 5.5V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-WDFN (2x2)
Part Status: Active
auf Bestellung 126000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.27 EUR
6000+0.26 EUR
15000+0.24 EUR
30000+0.23 EUR
75000+0.22 EUR
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AP22850SH8-7 AP22850.pdf
AP22850SH8-7
Hersteller: Diodes Incorporated
Description: IC PWR SWITCH P-CHAN 1:1 8WDFN
Packaging: Cut Tape (CT)
Features: Load Discharge, Power Good, Slew Rate Controlled
Package / Case: 8-VFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 21mOhm
Voltage - Load: 4.5V ~ 11V
Voltage - Supply (Vcc/Vdd): 2.5V ~ 5.5V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-WDFN (2x2)
Part Status: Active
auf Bestellung 129263 Stücke:
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Anzahl Preis
23+0.77 EUR
27+0.66 EUR
29+0.62 EUR
100+0.49 EUR
250+0.46 EUR
500+0.39 EUR
1000+0.30 EUR
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APT13003DZTR-G1
APT13003DZTR-G1
Hersteller: Diodes Incorporated
Description: TRANS NPN 450V 1.5A TO-92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 250mA, 1A
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 2V
Frequency - Transition: 4MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 1.1 W
Produkt ist nicht verfügbar
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APT13003HZTR-G1
APT13003HZTR-G1
Hersteller: Diodes Incorporated
Description: TRANS NPN 465V 1.5A TO-92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 250mA, 1A
DC Current Gain (hFE) (Min) @ Ic, Vce: 13 @ 500mA, 2V
Frequency - Transition: 4MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 465 V
Power - Max: 1.1 W
Produkt ist nicht verfügbar
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ZTX956STZ ZTX956.pdf
ZTX956STZ
Hersteller: Diodes Incorporated
Description: TRANS PNP 200V 2A E-LINE
Packaging: Cut Tape (CT)
Package / Case: E-Line-3, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 400mA, 2A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Frequency - Transition: 110MHz
Supplier Device Package: E-Line (TO-92 compatible)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 1.58 W
auf Bestellung 3850 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+2.99 EUR
10+1.90 EUR
100+1.27 EUR
500+1.01 EUR
1000+0.92 EUR
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ZX5T851ASTZ ZX5T851A.pdf
ZX5T851ASTZ
Hersteller: Diodes Incorporated
Description: TRANS NPN 60V 4.5A E-LINE
Packaging: Cut Tape (CT)
Package / Case: E-Line-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 210mV @ 200mA, 5A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
Frequency - Transition: 130MHz
Supplier Device Package: E-Line (TO-92 compatible)
Current - Collector (Ic) (Max): 4.5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.80 EUR
13+1.46 EUR
100+1.14 EUR
500+0.96 EUR
1000+0.79 EUR
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BAS70LP-7B BAS70LP.pdf
BAS70LP-7B
Hersteller: Diodes Incorporated
Description: DIODE SCHOTT 70V 70MA X1DFN10062
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.6 ns
Technology: Schottky
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: X1-DFN1006-2
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 15 mA
Current - Reverse Leakage @ Vr: 10 µA @ 70 V
auf Bestellung 637908 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
112+0.16 EUR
173+0.10 EUR
500+0.08 EUR
Mindestbestellmenge: 112
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BZT52C5V6-13-F ds18004.pdf
BZT52C5V6-13-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 5.6V 370MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±7%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
auf Bestellung 394923 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
91+0.19 EUR
143+0.12 EUR
375+0.05 EUR
500+0.04 EUR
1000+0.04 EUR
2000+0.04 EUR
5000+0.04 EUR
Mindestbestellmenge: 91
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BZX84B27-7-F BZX84Bxx(x).pdf
BZX84B27-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 27V 300MW SOT23
Produkt ist nicht verfügbar
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BZX84B8V2-7-F BZX84Bxxx.pdf
BZX84B8V2-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 8.2V 300MW SOT23
auf Bestellung 39000 Stücke:
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63+0.28 EUR
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DMN3190LDW-13 DMN3190LDW.pdf
DMN3190LDW-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 1A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 320mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1A
Input Capacitance (Ciss) (Max) @ Vds: 87pF @ 20V
Rds On (Max) @ Id, Vgs: 190mOhm @ 1.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: SOT-363
auf Bestellung 311796 Stücke:
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Anzahl Preis
29+0.62 EUR
46+0.39 EUR
100+0.24 EUR
500+0.18 EUR
1000+0.16 EUR
2000+0.14 EUR
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DMP3099L-7 DMP3099L.pdf
DMP3099L-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 3.8A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.8A, 10V
Power Dissipation (Max): 1.08W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 563 pF @ 25 V
auf Bestellung 317820 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
42+0.42 EUR
81+0.22 EUR
141+0.13 EUR
500+0.12 EUR
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DMP32D4S-7 DMP32D4S.pdf
DMP32D4S-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 300MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 300mA, 10V
Power Dissipation (Max): 370mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 51.16 pF @ 15 V
auf Bestellung 66050 Stücke:
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Anzahl Preis
27+0.67 EUR
44+0.40 EUR
100+0.26 EUR
500+0.19 EUR
1000+0.16 EUR
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ZXMC3F31DN8TA ZXMC3F31DN8.pdf
ZXMC3F31DN8TA
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 6.8A/4.9A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.8A, 4.9A
Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 15V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
auf Bestellung 23500 Stücke:
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Anzahl Preis
10+1.85 EUR
16+1.15 EUR
100+0.76 EUR
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ZXMC4559DN8TC ZXMC4559DN8.pdf
ZXMC4559DN8TC
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 60V 3.6A/2.6A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.6A, 2.6A
Input Capacitance (Ciss) (Max) @ Vds: 1063pF @ 30V
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar
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ZXMS6005DGTA ds32247.pdf
ZXMS6005DGTA
Hersteller: Diodes Incorporated
Description: IC PWR DRIVER N-CHAN 1:1 SOT223
Packaging: Cut Tape (CT)
Features: Auto Restart
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Low Side
Rds On (Typ): 150mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-223-3
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 37312 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.94 EUR
14+1.31 EUR
100+0.92 EUR
500+0.80 EUR
Mindestbestellmenge: 10
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