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D5V0Q1B2LP3-7 D5V0Q1B2LP3-7 Diodes Incorporated D5V0Q1B2LP3.pdf Description: TVS DIODE 5.5VWM 11VC X3DFN06032
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: X3-DFN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 11V
Power Line Protection: No
Part Status: Active
auf Bestellung 8490000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.06 EUR
20000+0.05 EUR
30000+0.05 EUR
50000+0.05 EUR
70000+0.04 EUR
Mindestbestellmenge: 10000
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DCX115EU-7-F DCX115EU-7-F Diodes Incorporated DCX_XXXX_U.pdf Description: TRANS PREBIAS NPN/PNP SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 100kOhms
Resistor - Emitter Base (R2): 100kOhms
Supplier Device Package: SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DCX143ZU-7-F DCX143ZU-7-F Diodes Incorporated DCX_XXXX_U.pdf Description: TRANS PREBIAS NPN/PNP SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 474000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.13 EUR
6000+0.12 EUR
9000+0.11 EUR
15000+0.10 EUR
21000+0.10 EUR
30000+0.09 EUR
75000+0.08 EUR
150000+0.08 EUR
Mindestbestellmenge: 3000
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DMC25D0UVT-7 DMC25D0UVT-7 Diodes Incorporated DMC25D0UVT.pdf Description: MOSFET N/P-CH 25V/30V TSOT23
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 25V, 30V
Current - Continuous Drain (Id) @ 25°C: 400mA, 3.2A
Input Capacitance (Ciss) (Max) @ Vds: 26.2pF @ 10V
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 8V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-23-6
Part Status: Active
auf Bestellung 297000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.24 EUR
6000+0.22 EUR
9000+0.21 EUR
15000+0.20 EUR
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DMN1019UVT-7 DMN1019UVT-7 Diodes Incorporated DMN1019UVT.pdf Description: MOSFET N-CH 12V 10.7A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 9.7A, 4.5V
Power Dissipation (Max): 1.73W (Ta)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 50.4 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2588 pF @ 10 V
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.19 EUR
6000+0.18 EUR
9000+0.16 EUR
Mindestbestellmenge: 3000
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DMN1045UFR4-7 DMN1045UFR4-7 Diodes Incorporated DMN1045UFR4.pdf Description: MOSFET N-CH 12V 3.2A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.2A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1010-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 10 V
auf Bestellung 243000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.13 EUR
9000+0.12 EUR
75000+0.11 EUR
Mindestbestellmenge: 3000
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DMN13H750S-7 DMN13H750S-7 Diodes Incorporated DMN13H750S.pdf Description: MOSFET N-CH 130V 1A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 2A, 10V
Power Dissipation (Max): 770mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 130 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 25 V
auf Bestellung 144000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.29 EUR
6000+0.28 EUR
9000+0.26 EUR
Mindestbestellmenge: 3000
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DMN24H3D5L-7 DMN24H3D5L-7 Diodes Incorporated DMN24H3D5L.pdf Description: MOSFET N-CH 240V 480MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 480mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 300mA, 10V
Power Dissipation (Max): 760mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 188 pF @ 25 V
Produkt ist nicht verfügbar
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DMP1200UFR4-7 DMP1200UFR4-7 Diodes Incorporated DMP1200UFR4.pdf Description: MOSFET P-CH 12V 2A X2-DFN1010-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
Power Dissipation (Max): 480mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1010-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 514 pF @ 5 V
auf Bestellung 51000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.17 EUR
6000+0.16 EUR
21000+0.15 EUR
Mindestbestellmenge: 3000
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DMP25H18DLFDE-7 DMP25H18DLFDE-7 Diodes Incorporated DMP25H18DLFDE.pdf Description: MOSFET P-CH 250V 260MA 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: U-DFN2020-6 (Type E)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V
Vgs (Max): ±40V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 81 pF @ 25 V
auf Bestellung 297000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.84 EUR
Mindestbestellmenge: 3000
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DMP3036SFG-7 DMP3036SFG-7 Diodes Incorporated DMP3036SFG.pdf Description: MOSFET P-CH 30V 8.7A PWRDI3333-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1931 pF @ 15 V
auf Bestellung 1056000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+0.42 EUR
4000+0.38 EUR
6000+0.36 EUR
10000+0.35 EUR
14000+0.33 EUR
Mindestbestellmenge: 2000
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DMP3056L-7 DMP3056L-7 Diodes Incorporated DMP3056L.pdf Description: MOSFET P-CH 30V 4.3A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V
Power Dissipation (Max): 1.38W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 642 pF @ 25 V
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.17 EUR
6000+0.16 EUR
9000+0.15 EUR
Mindestbestellmenge: 3000
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AP4312K6TR-G1 AP4312K6TR-G1 Diodes Incorporated Description: IC VREF SHUNT ADJ SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Voltage - Supply: 1.7V ~ 18V
Applications: Constant Voltage and Current Controller
Current - Supply: 180µA
Supplier Device Package: SOT-26
Part Status: Active
Produkt ist nicht verfügbar
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AP9211SA-AB-HAC-7 AP9211SA-AB-HAC-7 Diodes Incorporated AP9211.pdf Description: IC BATT PROT LI-ION 1CELL 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: U-DFN2030-6 (Type C)
Fault Protection: Over Current, Over Voltage
Produkt ist nicht verfügbar
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AP9211SA-AC-HAC-7 AP9211SA-AC-HAC-7 Diodes Incorporated AP9211.pdf Description: IC BATT PROT LI-ION 1CELL 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: U-DFN2030-6 (Type C)
Fault Protection: Over Current, Over Voltage
Produkt ist nicht verfügbar
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AP9211SA-AD-HAC-7 AP9211SA-AD-HAC-7 Diodes Incorporated AP9211.pdf Description: IC BATT PROT LI-ION 1CELL 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: U-DFN2030-6 (Type C)
Fault Protection: Over Current, Over Voltage
Produkt ist nicht verfügbar
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AP9211SA-AE-HAC-7 AP9211SA-AE-HAC-7 Diodes Incorporated AP9211.pdf Description: IC BATT PROT LI-ION 1CELL 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: U-DFN2030-6 (Type C)
Fault Protection: Over Current, Over Voltage
Part Status: Active
auf Bestellung 4931 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.92 EUR
16+1.17 EUR
25+0.97 EUR
100+0.75 EUR
250+0.64 EUR
500+0.57 EUR
1000+0.51 EUR
Mindestbestellmenge: 10
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AP9211SA-AG-HAC-7 AP9211SA-AG-HAC-7 Diodes Incorporated AP9211.pdf Description: IC BATT PROT LI-ION 1CELL 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: U-DFN2030-6 (Type C)
Fault Protection: Over Current, Over Voltage
Produkt ist nicht verfügbar
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AP9211SA-AH-HAC-7 AP9211SA-AH-HAC-7 Diodes Incorporated AP9211.pdf Description: IC BATT PROT LI-ION 1CELL 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: U-DFN2030-6 (Type C)
Fault Protection: Over Current, Over Voltage
Part Status: Active
auf Bestellung 3140 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.92 EUR
16+1.17 EUR
25+0.97 EUR
100+0.75 EUR
250+0.64 EUR
500+0.57 EUR
1000+0.51 EUR
Mindestbestellmenge: 10
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BCM857BV-7 BCM857BV-7 Diodes Incorporated BCM857BV.pdf Description: TRANS 2PNP 45V 100MA SOT-563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 150°C (TJ)
Power - Max: 357mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 175MHz
Supplier Device Package: SOT-563
Part Status: Active
auf Bestellung 259658 Stücke:
Lieferzeit 10-14 Tag (e)
20+0.92 EUR
31+0.58 EUR
100+0.29 EUR
500+0.28 EUR
1000+0.26 EUR
Mindestbestellmenge: 20
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D5V0Q1B2LP3-7 D5V0Q1B2LP3-7 Diodes Incorporated D5V0Q1B2LP3.pdf Description: TVS DIODE 5.5VWM 11VC X3DFN06032
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: X3-DFN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 11V
Power Line Protection: No
Part Status: Active
auf Bestellung 8490807 Stücke:
Lieferzeit 10-14 Tag (e)
72+0.25 EUR
104+0.17 EUR
239+0.07 EUR
500+0.07 EUR
1000+0.07 EUR
2000+0.06 EUR
5000+0.06 EUR
Mindestbestellmenge: 72
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DCX115EU-7-F DCX115EU-7-F Diodes Incorporated DCX_XXXX_U.pdf Description: TRANS PREBIAS NPN/PNP SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 100kOhms
Resistor - Emitter Base (R2): 100kOhms
Supplier Device Package: SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1415 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.76 EUR
38+0.47 EUR
100+0.29 EUR
500+0.22 EUR
1000+0.20 EUR
Mindestbestellmenge: 24
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DCX143ZU-7-F DCX143ZU-7-F Diodes Incorporated DCX_XXXX_U.pdf Description: TRANS PREBIAS NPN/PNP SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 476945 Stücke:
Lieferzeit 10-14 Tag (e)
30+0.60 EUR
48+0.37 EUR
100+0.23 EUR
500+0.17 EUR
1000+0.15 EUR
Mindestbestellmenge: 30
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DMC25D0UVT-7 DMC25D0UVT-7 Diodes Incorporated DMC25D0UVT.pdf Description: MOSFET N/P-CH 25V/30V TSOT23
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 25V, 30V
Current - Continuous Drain (Id) @ 25°C: 400mA, 3.2A
Input Capacitance (Ciss) (Max) @ Vds: 26.2pF @ 10V
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 8V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-23-6
Part Status: Active
auf Bestellung 299847 Stücke:
Lieferzeit 10-14 Tag (e)
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DMC3021LSDQ-13 DMC3021LSDQ-13 Diodes Incorporated DMC3021LSDQ.pdf Description: MOSFET N/P-CH 30V 8.5A/7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.5A, 7A
Input Capacitance (Ciss) (Max) @ Vds: 767pF @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16.1nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 3868 Stücke:
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DMC4015SSD-13 DMC4015SSD-13 Diodes Incorporated DMC4015SSD.pdf Description: MOSFET N/P-CH 40V 8.6A/6.2A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8.6A, 6.2A
Input Capacitance (Ciss) (Max) @ Vds: 1810pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 19531 Stücke:
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DMN1019UVT-7 DMN1019UVT-7 Diodes Incorporated DMN1019UVT.pdf Description: MOSFET N-CH 12V 10.7A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 9.7A, 4.5V
Power Dissipation (Max): 1.73W (Ta)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 50.4 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2588 pF @ 10 V
auf Bestellung 26777 Stücke:
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DMN1045UFR4-7 DMN1045UFR4-7 Diodes Incorporated DMN1045UFR4.pdf Description: MOSFET N-CH 12V 3.2A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.2A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1010-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 10 V
auf Bestellung 247482 Stücke:
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DMN10H120SE-13 DMN10H120SE-13 Diodes Incorporated DMN10H120SE.pdf Description: MOSFET N-CH 100V 3.6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 3.3A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 549 pF @ 50 V
auf Bestellung 905640 Stücke:
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DMN13H750S-7 DMN13H750S-7 Diodes Incorporated DMN13H750S.pdf Description: MOSFET N-CH 130V 1A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 2A, 10V
Power Dissipation (Max): 770mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 130 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 25 V
auf Bestellung 147502 Stücke:
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DMN15H310SE-13 DMN15H310SE-13 Diodes Incorporated DMN15H310SE.pdf Description: MOSFET N-CH 150V 2A/7.1A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 7.1A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 1.5A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 25 V
auf Bestellung 482282 Stücke:
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100+1.02 EUR
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DMN24H3D5L-7 DMN24H3D5L-7 Diodes Incorporated DMN24H3D5L.pdf Description: MOSFET N-CH 240V 480MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 480mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 300mA, 10V
Power Dissipation (Max): 760mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 188 pF @ 25 V
auf Bestellung 7257 Stücke:
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18+0.99 EUR
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100+0.63 EUR
500+0.49 EUR
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DMP1200UFR4-7 DMP1200UFR4-7 Diodes Incorporated DMP1200UFR4.pdf Description: MOSFET P-CH 12V 2A X2-DFN1010-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
Power Dissipation (Max): 480mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1010-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 514 pF @ 5 V
auf Bestellung 51000 Stücke:
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21+0.86 EUR
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100+0.28 EUR
500+0.26 EUR
1000+0.23 EUR
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DMP25H18DLFDE-7 DMP25H18DLFDE-7 Diodes Incorporated DMP25H18DLFDE.pdf Description: MOSFET P-CH 250V 260MA 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: U-DFN2020-6 (Type E)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V
Vgs (Max): ±40V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 81 pF @ 25 V
auf Bestellung 299348 Stücke:
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7+2.52 EUR
11+1.70 EUR
100+1.20 EUR
500+0.97 EUR
1000+0.90 EUR
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DMP3028LK3-13 DMP3028LK3-13 Diodes Incorporated DMP3028LK3.pdf Description: MOSFET P-CH 30V 27A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1241 pF @ 15 V
auf Bestellung 104785 Stücke:
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18+1.02 EUR
20+0.92 EUR
100+0.60 EUR
500+0.47 EUR
1000+0.43 EUR
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DMP3036SFG-7 DMP3036SFG-7 Diodes Incorporated DMP3036SFG.pdf Description: MOSFET P-CH 30V 8.7A PWRDI3333-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1931 pF @ 15 V
auf Bestellung 1058945 Stücke:
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11+1.62 EUR
18+1.01 EUR
100+0.66 EUR
500+0.51 EUR
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DMP3036SSD-13 DMP3036SSD-13 Diodes Incorporated DMP3036SSD.pdf Description: MOSFET 2P-CH 30V 18.0A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 18.0A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1931pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
auf Bestellung 4823 Stücke:
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100+0.79 EUR
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DMP3036SSS-13 DMP3036SSS-13 Diodes Incorporated DMP3036SSS.pdf Description: MOSFET P-CH 30V 19.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1931 pF @ 15 V
auf Bestellung 6802 Stücke:
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10+1.78 EUR
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100+0.75 EUR
500+0.58 EUR
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DMP3056L-7 DMP3056L-7 Diodes Incorporated DMP3056L.pdf Description: MOSFET P-CH 30V 4.3A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V
Power Dissipation (Max): 1.38W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 642 pF @ 25 V
auf Bestellung 28221 Stücke:
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22+0.83 EUR
33+0.55 EUR
100+0.31 EUR
500+0.26 EUR
1000+0.22 EUR
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DMP32D5LFA-7B DMP32D5LFA-7B Diodes Incorporated DMP32D5LFA.pdf Description: MOSFET P-CH 30V 300MA 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 200mA, 4.5V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: X2-DFN0806-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40.9 pF @ 15 V
auf Bestellung 7358 Stücke:
Lieferzeit 10-14 Tag (e)
28+0.63 EUR
42+0.43 EUR
100+0.21 EUR
500+0.17 EUR
1000+0.12 EUR
2000+0.10 EUR
5000+0.10 EUR
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DMC25D0UVT-13 DMC25D0UVT-13 Diodes Incorporated DMC25D0UVT.pdf Description: MOSFET N/P-CH 25V/30V TSOT23
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 25V, 30V
Current - Continuous Drain (Id) @ 25°C: 400mA, 3.2A
Input Capacitance (Ciss) (Max) @ Vds: 26.2pF @ 10V
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 8V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-23-6
Produkt ist nicht verfügbar
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DMC25D1UVT-13 DMC25D1UVT-13 Diodes Incorporated DMC25D1UVT.pdf Description: MOSFET N/P-CH 25V/12V TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 25V, 12V
Current - Continuous Drain (Id) @ 25°C: 500mA, 3.9A
Input Capacitance (Ciss) (Max) @ Vds: 27.6pF @ 10V
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-26
Produkt ist nicht verfügbar
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DMN1019UVT-13 DMN1019UVT-13 Diodes Incorporated DMN1019UVT.pdf Description: MOSFET N-CH 12V 10.7A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 9.7A, 4.5V
Power Dissipation (Max): 1.73W (Ta)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 50.4 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2588 pF @ 10 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.18 EUR
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DMN13H750S-13 DMN13H750S-13 Diodes Incorporated DMN13H750S.pdf Description: MOSFET N-CH 130V 1A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 2A, 10V
Power Dissipation (Max): 770mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 130 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 25 V
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DMN24H3D5L-13 DMN24H3D5L-13 Diodes Incorporated DMN24H3D5L.pdf Description: MOSFET N-CH 240V 0.48A SOT23
Produkt ist nicht verfügbar
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DMP25H18DLFDE-13 DMP25H18DLFDE-13 Diodes Incorporated DMP25H18DLFDE.pdf Description: MOSFET P-CH 250V 260MA 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: U-DFN2020-6 (Type E)
Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V
Vgs (Max): ±40V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 81 pF @ 25 V
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DMP3018SFK-13 DMP3018SFK-13 Diodes Incorporated DMP3018SFK.pdf Description: MOSFET P-CH 30V 10.2A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2523-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4414 pF @ 15 V
Produkt ist nicht verfügbar
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DMP3056L-13 DMP3056L-13 Diodes Incorporated DMP3056L.pdf Description: MOSFET P-CH 30V 4.3A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V
Power Dissipation (Max): 1.38W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 642 pF @ 25 V
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AH8503-FDC-7 AH8503-FDC-7 Diodes Incorporated AH8503.pdf Description: SENSOR HALL ANALOG 6UDFN
Packaging: Tape & Reel (TR)
Features: Sleep Mode
Package / Case: 6-UDFN Exposed Pad
Output Type: Analog Voltage
Mounting Type: Surface Mount
Axis: Single
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.6V ~ 3.6V
Technology: Hall Effect
Resolution: 8 b
Sensing Range: ±40mT
Current - Output (Max): 10mA
Current - Supply (Max): 1.5mA
Supplier Device Package: U-DFN2020-6 (Type C)
Part Status: Active
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AP65550FN-7 AP65550FN-7 Diodes Incorporated AP65550.pdf Description: IC REG BUCK ADJ 5A 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 650kHz
Voltage - Input (Max): 18V
Topology: Buck
Supplier Device Package: U-DFN3030-10
Synchronous Rectifier: Yes
Voltage - Output (Max): 6V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.76V
Produkt ist nicht verfügbar
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AP9211SA-AA-HAC-7 AP9211SA-AA-HAC-7 Diodes Incorporated AP9211.pdf Description: IC BATT PROT LI-ION 1CELL 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: U-DFN2030-6 (Type C)
Fault Protection: Over Current, Over Voltage
Part Status: Active
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AP9211SA-AF-HAC-7 AP9211SA-AF-HAC-7 Diodes Incorporated AP9211.pdf Description: IC BATT PROT LI-ION 1CELL 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: U-DFN2030-6 (Type C)
Fault Protection: Over Current, Over Voltage
Part Status: Active
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DLLFSD01LP3-7 DLLFSD01LP3-7 Diodes Incorporated DLLFSD01LP3.pdf Description: DIODE STD 80V 100MA X3DFN06032
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: X3-DFN0603-2
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
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DMN30H4D0LFDE-7 DMN30H4D0LFDE-7 Diodes Incorporated DMN30H4D0LFDE.pdf Description: MOSFET N-CH 300V 550MA 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 550mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V
Power Dissipation (Max): 630mW (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type E)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 187.3 pF @ 25 V
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ZXTR2105F-7 ZXTR2105F-7 Diodes Incorporated ZXTR2105F.pdf Description: IC REG LINEAR 5V 89MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 89mA
Operating Temperature: -65°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 800 µA
Voltage - Input (Max): 60V
Number of Regulators: 1
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 46dB (100Hz)
Current - Supply (Max): 6.7 mA
Grade: Automotive
Qualification: AEC-Q101
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AL8821SP-13 AL8821SP-13 Diodes Incorporated AL8821_NPA.pdf Description: IC LED DRIVER OFFL TRIAC 2A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 36V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1MHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 2A (Switch)
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: 8-SO-EP
Dimming: Triac
Voltage - Supply (Min): 5V
Voltage - Supply (Max): 36V
Part Status: Obsolete
Produkt ist nicht verfügbar
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AP3776BMTR-G1 AP3776BMTR-G1 Diodes Incorporated AP3776B.pdf Description: IC OFFLINE SWITCH FLYBACK 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.1V ~ 28V
Supplier Device Package: 8-SO
Fault Protection: Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 13 V
Part Status: Active
Produkt ist nicht verfügbar
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APR34309CAMPTR-G1 APR34309CAMPTR-G1 Diodes Incorporated APR34309CA.pdf Description: IC RECT CTLR AC/DC SYNCH 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V ~ 6V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 8-SO-EP
Current - Supply: 100 µA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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DMN4026SK3-13 DMN4026SK3-13 Diodes Incorporated DMN4026SK3.pdf Description: MOSFET N-CH 40V 28A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 21.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1181 pF @ 20 V
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DMP4047SK3-13 DMP4047SK3-13 Diodes Incorporated DMP4047SK3.pdf Description: MOSFET P-CH 40V 20A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.4A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1328 pF @ 20 V
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D5V0Q1B2LP3-7 D5V0Q1B2LP3.pdf
D5V0Q1B2LP3-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 5.5VWM 11VC X3DFN06032
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: X3-DFN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 11V
Power Line Protection: No
Part Status: Active
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DCX115EU-7-F DCX_XXXX_U.pdf
DCX115EU-7-F
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN/PNP SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 100kOhms
Resistor - Emitter Base (R2): 100kOhms
Supplier Device Package: SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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DCX143ZU-7-F DCX_XXXX_U.pdf
DCX143ZU-7-F
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN/PNP SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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3000+0.13 EUR
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DMC25D0UVT-7 DMC25D0UVT.pdf
DMC25D0UVT-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 25V/30V TSOT23
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 25V, 30V
Current - Continuous Drain (Id) @ 25°C: 400mA, 3.2A
Input Capacitance (Ciss) (Max) @ Vds: 26.2pF @ 10V
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 8V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-23-6
Part Status: Active
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DMN1019UVT-7 DMN1019UVT.pdf
DMN1019UVT-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 12V 10.7A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 9.7A, 4.5V
Power Dissipation (Max): 1.73W (Ta)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 50.4 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2588 pF @ 10 V
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DMN1045UFR4-7 DMN1045UFR4.pdf
DMN1045UFR4-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 12V 3.2A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.2A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1010-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 10 V
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DMN13H750S-7 DMN13H750S.pdf
DMN13H750S-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 130V 1A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 2A, 10V
Power Dissipation (Max): 770mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 130 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 25 V
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DMN24H3D5L-7 DMN24H3D5L.pdf
DMN24H3D5L-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 240V 480MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 480mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 300mA, 10V
Power Dissipation (Max): 760mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 188 pF @ 25 V
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DMP1200UFR4-7 DMP1200UFR4.pdf
DMP1200UFR4-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 12V 2A X2-DFN1010-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
Power Dissipation (Max): 480mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1010-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 514 pF @ 5 V
auf Bestellung 51000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.17 EUR
6000+0.16 EUR
21000+0.15 EUR
Mindestbestellmenge: 3000
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DMP25H18DLFDE-7 DMP25H18DLFDE.pdf
DMP25H18DLFDE-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 250V 260MA 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: U-DFN2020-6 (Type E)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V
Vgs (Max): ±40V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 81 pF @ 25 V
auf Bestellung 297000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.84 EUR
Mindestbestellmenge: 3000
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DMP3036SFG-7 DMP3036SFG.pdf
DMP3036SFG-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 8.7A PWRDI3333-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1931 pF @ 15 V
auf Bestellung 1056000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.42 EUR
4000+0.38 EUR
6000+0.36 EUR
10000+0.35 EUR
14000+0.33 EUR
Mindestbestellmenge: 2000
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DMP3056L-7 DMP3056L.pdf
DMP3056L-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 4.3A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V
Power Dissipation (Max): 1.38W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 642 pF @ 25 V
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.17 EUR
6000+0.16 EUR
9000+0.15 EUR
Mindestbestellmenge: 3000
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AP4312K6TR-G1
AP4312K6TR-G1
Hersteller: Diodes Incorporated
Description: IC VREF SHUNT ADJ SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Voltage - Supply: 1.7V ~ 18V
Applications: Constant Voltage and Current Controller
Current - Supply: 180µA
Supplier Device Package: SOT-26
Part Status: Active
Produkt ist nicht verfügbar
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AP9211SA-AB-HAC-7 AP9211.pdf
AP9211SA-AB-HAC-7
Hersteller: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: U-DFN2030-6 (Type C)
Fault Protection: Over Current, Over Voltage
Produkt ist nicht verfügbar
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AP9211SA-AC-HAC-7 AP9211.pdf
AP9211SA-AC-HAC-7
Hersteller: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: U-DFN2030-6 (Type C)
Fault Protection: Over Current, Over Voltage
Produkt ist nicht verfügbar
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AP9211SA-AD-HAC-7 AP9211.pdf
AP9211SA-AD-HAC-7
Hersteller: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: U-DFN2030-6 (Type C)
Fault Protection: Over Current, Over Voltage
Produkt ist nicht verfügbar
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AP9211SA-AE-HAC-7 AP9211.pdf
AP9211SA-AE-HAC-7
Hersteller: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: U-DFN2030-6 (Type C)
Fault Protection: Over Current, Over Voltage
Part Status: Active
auf Bestellung 4931 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.92 EUR
16+1.17 EUR
25+0.97 EUR
100+0.75 EUR
250+0.64 EUR
500+0.57 EUR
1000+0.51 EUR
Mindestbestellmenge: 10
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AP9211SA-AG-HAC-7 AP9211.pdf
AP9211SA-AG-HAC-7
Hersteller: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: U-DFN2030-6 (Type C)
Fault Protection: Over Current, Over Voltage
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AP9211SA-AH-HAC-7 AP9211.pdf
AP9211SA-AH-HAC-7
Hersteller: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: U-DFN2030-6 (Type C)
Fault Protection: Over Current, Over Voltage
Part Status: Active
auf Bestellung 3140 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.92 EUR
16+1.17 EUR
25+0.97 EUR
100+0.75 EUR
250+0.64 EUR
500+0.57 EUR
1000+0.51 EUR
Mindestbestellmenge: 10
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BCM857BV-7 BCM857BV.pdf
BCM857BV-7
Hersteller: Diodes Incorporated
Description: TRANS 2PNP 45V 100MA SOT-563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 150°C (TJ)
Power - Max: 357mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 175MHz
Supplier Device Package: SOT-563
Part Status: Active
auf Bestellung 259658 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.92 EUR
31+0.58 EUR
100+0.29 EUR
500+0.28 EUR
1000+0.26 EUR
Mindestbestellmenge: 20
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D5V0Q1B2LP3-7 D5V0Q1B2LP3.pdf
D5V0Q1B2LP3-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 5.5VWM 11VC X3DFN06032
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: X3-DFN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 11V
Power Line Protection: No
Part Status: Active
auf Bestellung 8490807 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
72+0.25 EUR
104+0.17 EUR
239+0.07 EUR
500+0.07 EUR
1000+0.07 EUR
2000+0.06 EUR
5000+0.06 EUR
Mindestbestellmenge: 72
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DCX115EU-7-F DCX_XXXX_U.pdf
DCX115EU-7-F
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN/PNP SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 100kOhms
Resistor - Emitter Base (R2): 100kOhms
Supplier Device Package: SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1415 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.76 EUR
38+0.47 EUR
100+0.29 EUR
500+0.22 EUR
1000+0.20 EUR
Mindestbestellmenge: 24
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DCX143ZU-7-F DCX_XXXX_U.pdf
DCX143ZU-7-F
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN/PNP SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 476945 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
30+0.60 EUR
48+0.37 EUR
100+0.23 EUR
500+0.17 EUR
1000+0.15 EUR
Mindestbestellmenge: 30
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DMC25D0UVT-7 DMC25D0UVT.pdf
DMC25D0UVT-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 25V/30V TSOT23
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 25V, 30V
Current - Continuous Drain (Id) @ 25°C: 400mA, 3.2A
Input Capacitance (Ciss) (Max) @ Vds: 26.2pF @ 10V
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 8V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-23-6
Part Status: Active
auf Bestellung 299847 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.06 EUR
27+0.66 EUR
100+0.42 EUR
500+0.32 EUR
1000+0.29 EUR
Mindestbestellmenge: 17
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DMC3021LSDQ-13 DMC3021LSDQ.pdf
DMC3021LSDQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 8.5A/7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.5A, 7A
Input Capacitance (Ciss) (Max) @ Vds: 767pF @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16.1nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 3868 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.50 EUR
19+0.93 EUR
100+0.56 EUR
500+0.44 EUR
1000+0.40 EUR
Mindestbestellmenge: 12
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DMC4015SSD-13 DMC4015SSD.pdf
DMC4015SSD-13
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 40V 8.6A/6.2A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8.6A, 6.2A
Input Capacitance (Ciss) (Max) @ Vds: 1810pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 19531 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.50 EUR
18+0.99 EUR
100+0.75 EUR
Mindestbestellmenge: 8
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DMN1019UVT-7 DMN1019UVT.pdf
DMN1019UVT-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 12V 10.7A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 9.7A, 4.5V
Power Dissipation (Max): 1.73W (Ta)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 50.4 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2588 pF @ 10 V
auf Bestellung 26777 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.70 EUR
33+0.55 EUR
100+0.33 EUR
500+0.30 EUR
1000+0.21 EUR
Mindestbestellmenge: 25
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DMN1045UFR4-7 DMN1045UFR4.pdf
DMN1045UFR4-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 12V 3.2A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.2A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1010-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 10 V
auf Bestellung 247482 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.72 EUR
40+0.44 EUR
100+0.28 EUR
500+0.21 EUR
1000+0.19 EUR
Mindestbestellmenge: 25
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DMN10H120SE-13 DMN10H120SE.pdf
DMN10H120SE-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 3.6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 3.3A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 549 pF @ 50 V
auf Bestellung 905640 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+1.00 EUR
21+0.86 EUR
100+0.60 EUR
500+0.47 EUR
1000+0.38 EUR
Mindestbestellmenge: 18
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DMN13H750S-7 DMN13H750S.pdf
DMN13H750S-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 130V 1A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 2A, 10V
Power Dissipation (Max): 770mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 130 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 25 V
auf Bestellung 147502 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.88 EUR
24+0.75 EUR
100+0.52 EUR
500+0.41 EUR
1000+0.33 EUR
Mindestbestellmenge: 20
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DMN15H310SE-13 DMN15H310SE.pdf
DMN15H310SE-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 150V 2A/7.1A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 7.1A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 1.5A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 25 V
auf Bestellung 482282 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.16 EUR
13+1.46 EUR
100+1.02 EUR
500+0.83 EUR
1000+0.76 EUR
Mindestbestellmenge: 9
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DMN24H3D5L-7 DMN24H3D5L.pdf
DMN24H3D5L-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 240V 480MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 480mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 300mA, 10V
Power Dissipation (Max): 760mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 188 pF @ 25 V
auf Bestellung 7257 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+0.99 EUR
21+0.84 EUR
100+0.63 EUR
500+0.49 EUR
1000+0.38 EUR
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DMP1200UFR4-7 DMP1200UFR4.pdf
DMP1200UFR4-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 12V 2A X2-DFN1010-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
Power Dissipation (Max): 480mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1010-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 514 pF @ 5 V
auf Bestellung 51000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+0.86 EUR
34+0.53 EUR
100+0.28 EUR
500+0.26 EUR
1000+0.23 EUR
Mindestbestellmenge: 21
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DMP25H18DLFDE-7 DMP25H18DLFDE.pdf
DMP25H18DLFDE-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 250V 260MA 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: U-DFN2020-6 (Type E)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V
Vgs (Max): ±40V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 81 pF @ 25 V
auf Bestellung 299348 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.52 EUR
11+1.70 EUR
100+1.20 EUR
500+0.97 EUR
1000+0.90 EUR
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DMP3028LK3-13 DMP3028LK3.pdf
DMP3028LK3-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 27A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1241 pF @ 15 V
auf Bestellung 104785 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+1.02 EUR
20+0.92 EUR
100+0.60 EUR
500+0.47 EUR
1000+0.43 EUR
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DMP3036SFG-7 DMP3036SFG.pdf
DMP3036SFG-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 8.7A PWRDI3333-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1931 pF @ 15 V
auf Bestellung 1058945 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.62 EUR
18+1.01 EUR
100+0.66 EUR
500+0.51 EUR
1000+0.46 EUR
Mindestbestellmenge: 11
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DMP3036SSD-13 DMP3036SSD.pdf
DMP3036SSD-13
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 30V 18.0A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 18.0A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1931pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
auf Bestellung 4823 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.92 EUR
15+1.20 EUR
100+0.79 EUR
500+0.61 EUR
1000+0.56 EUR
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DMP3036SSS-13 DMP3036SSS.pdf
DMP3036SSS-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 19.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1931 pF @ 15 V
auf Bestellung 6802 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.78 EUR
16+1.14 EUR
100+0.75 EUR
500+0.58 EUR
1000+0.52 EUR
Mindestbestellmenge: 10
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DMP3056L-7 DMP3056L.pdf
DMP3056L-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 4.3A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V
Power Dissipation (Max): 1.38W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 642 pF @ 25 V
auf Bestellung 28221 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.83 EUR
33+0.55 EUR
100+0.31 EUR
500+0.26 EUR
1000+0.22 EUR
Mindestbestellmenge: 22
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DMP32D5LFA-7B DMP32D5LFA.pdf
DMP32D5LFA-7B
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 300MA 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 200mA, 4.5V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: X2-DFN0806-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40.9 pF @ 15 V
auf Bestellung 7358 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.63 EUR
42+0.43 EUR
100+0.21 EUR
500+0.17 EUR
1000+0.12 EUR
2000+0.10 EUR
5000+0.10 EUR
Mindestbestellmenge: 28
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DMC25D0UVT-13 DMC25D0UVT.pdf
DMC25D0UVT-13
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 25V/30V TSOT23
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 25V, 30V
Current - Continuous Drain (Id) @ 25°C: 400mA, 3.2A
Input Capacitance (Ciss) (Max) @ Vds: 26.2pF @ 10V
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 8V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-23-6
Produkt ist nicht verfügbar
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DMC25D1UVT-13 DMC25D1UVT.pdf
DMC25D1UVT-13
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 25V/12V TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 25V, 12V
Current - Continuous Drain (Id) @ 25°C: 500mA, 3.9A
Input Capacitance (Ciss) (Max) @ Vds: 27.6pF @ 10V
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-26
Produkt ist nicht verfügbar
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DMN1019UVT-13 DMN1019UVT.pdf
DMN1019UVT-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 12V 10.7A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 9.7A, 4.5V
Power Dissipation (Max): 1.73W (Ta)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 50.4 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2588 pF @ 10 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.18 EUR
Mindestbestellmenge: 10000
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DMN13H750S-13 DMN13H750S.pdf
DMN13H750S-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 130V 1A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 2A, 10V
Power Dissipation (Max): 770mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 130 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 25 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.28 EUR
Mindestbestellmenge: 10000
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DMN24H3D5L-13 DMN24H3D5L.pdf
DMN24H3D5L-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 240V 0.48A SOT23
Produkt ist nicht verfügbar
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DMP25H18DLFDE-13 DMP25H18DLFDE.pdf
DMP25H18DLFDE-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 250V 260MA 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: U-DFN2020-6 (Type E)
Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V
Vgs (Max): ±40V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 81 pF @ 25 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.85 EUR
Mindestbestellmenge: 10000
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DMP3018SFK-13 DMP3018SFK.pdf
DMP3018SFK-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 10.2A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2523-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4414 pF @ 15 V
Produkt ist nicht verfügbar
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DMP3056L-13 DMP3056L.pdf
DMP3056L-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 4.3A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V
Power Dissipation (Max): 1.38W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 642 pF @ 25 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.17 EUR
20000+0.15 EUR
Mindestbestellmenge: 10000
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AH8503-FDC-7 AH8503.pdf
AH8503-FDC-7
Hersteller: Diodes Incorporated
Description: SENSOR HALL ANALOG 6UDFN
Packaging: Tape & Reel (TR)
Features: Sleep Mode
Package / Case: 6-UDFN Exposed Pad
Output Type: Analog Voltage
Mounting Type: Surface Mount
Axis: Single
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.6V ~ 3.6V
Technology: Hall Effect
Resolution: 8 b
Sensing Range: ±40mT
Current - Output (Max): 10mA
Current - Supply (Max): 1.5mA
Supplier Device Package: U-DFN2020-6 (Type C)
Part Status: Active
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.70 EUR
Mindestbestellmenge: 3000
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AP65550FN-7 AP65550.pdf
AP65550FN-7
Hersteller: Diodes Incorporated
Description: IC REG BUCK ADJ 5A 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 650kHz
Voltage - Input (Max): 18V
Topology: Buck
Supplier Device Package: U-DFN3030-10
Synchronous Rectifier: Yes
Voltage - Output (Max): 6V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.76V
Produkt ist nicht verfügbar
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AP9211SA-AA-HAC-7 AP9211.pdf
AP9211SA-AA-HAC-7
Hersteller: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: U-DFN2030-6 (Type C)
Fault Protection: Over Current, Over Voltage
Part Status: Active
Produkt ist nicht verfügbar
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AP9211SA-AF-HAC-7 AP9211.pdf
AP9211SA-AF-HAC-7
Hersteller: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: U-DFN2030-6 (Type C)
Fault Protection: Over Current, Over Voltage
Part Status: Active
Produkt ist nicht verfügbar
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DLLFSD01LP3-7 DLLFSD01LP3.pdf
DLLFSD01LP3-7
Hersteller: Diodes Incorporated
Description: DIODE STD 80V 100MA X3DFN06032
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: X3-DFN0603-2
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
auf Bestellung 1750000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.10 EUR
20000+0.09 EUR
30000+0.09 EUR
50000+0.08 EUR
70000+0.08 EUR
100000+0.08 EUR
Mindestbestellmenge: 10000
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DMN30H4D0LFDE-7 DMN30H4D0LFDE.pdf
DMN30H4D0LFDE-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 300V 550MA 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 550mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V
Power Dissipation (Max): 630mW (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type E)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 187.3 pF @ 25 V
auf Bestellung 237000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.30 EUR
6000+0.28 EUR
9000+0.27 EUR
15000+0.26 EUR
Mindestbestellmenge: 3000
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ZXTR2105F-7 ZXTR2105F.pdf
ZXTR2105F-7
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 5V 89MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 89mA
Operating Temperature: -65°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 800 µA
Voltage - Input (Max): 60V
Number of Regulators: 1
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 46dB (100Hz)
Current - Supply (Max): 6.7 mA
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 117000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.28 EUR
6000+0.26 EUR
9000+0.24 EUR
15000+0.23 EUR
21000+0.22 EUR
30000+0.21 EUR
Mindestbestellmenge: 3000
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AL8821SP-13 AL8821_NPA.pdf
AL8821SP-13
Hersteller: Diodes Incorporated
Description: IC LED DRIVER OFFL TRIAC 2A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 36V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1MHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 2A (Switch)
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: 8-SO-EP
Dimming: Triac
Voltage - Supply (Min): 5V
Voltage - Supply (Max): 36V
Part Status: Obsolete
Produkt ist nicht verfügbar
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AP3776BMTR-G1 AP3776B.pdf
AP3776BMTR-G1
Hersteller: Diodes Incorporated
Description: IC OFFLINE SWITCH FLYBACK 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.1V ~ 28V
Supplier Device Package: 8-SO
Fault Protection: Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 13 V
Part Status: Active
Produkt ist nicht verfügbar
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APR34309CAMPTR-G1 APR34309CA.pdf
APR34309CAMPTR-G1
Hersteller: Diodes Incorporated
Description: IC RECT CTLR AC/DC SYNCH 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V ~ 6V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 8-SO-EP
Current - Supply: 100 µA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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DMN4026SK3-13 DMN4026SK3.pdf
DMN4026SK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 28A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 21.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1181 pF @ 20 V
auf Bestellung 75000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.36 EUR
5000+0.33 EUR
7500+0.32 EUR
Mindestbestellmenge: 2500
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DMP4047SK3-13 DMP4047SK3.pdf
DMP4047SK3-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 40V 20A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.4A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1328 pF @ 20 V
auf Bestellung 42500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.39 EUR
5000+0.36 EUR
7500+0.34 EUR
12500+0.33 EUR
17500+0.32 EUR
Mindestbestellmenge: 2500
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