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S1MWF-7 S1MWF-7 Diodes Incorporated S1MWF.pdf Description: DIODE GEN PURP 1KV 1A SOD123F
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SDM2U20SD3-7 SDM2U20SD3-7 Diodes Incorporated SDM2U20SD3.pdf Description: DIODE SCHOTTKY 20V 2A SOD323
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 525 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 54pF @ 5V, 1MHz
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B240Q-13-F B240Q-13-F Diodes Incorporated B220_A-B260_A.pdf Description: DIODE SCHOTTKY 40V 2A SMB
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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3000+0.13 EUR
6000+0.12 EUR
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B540CQ-13-F B540CQ-13-F Diodes Incorporated B520C-B560C.pdf Description: DIODE SCHOTTKY 40V 5A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 300pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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ZLPM8014JB20TC ZLPM8014JB20TC Diodes Incorporated ZLPM8014.pdf Description: IC LNB CTLR PWR SUPPLY 20UQFN
Supplier Device Package: U-QFN4040-20
Current - Supply: 6mA
Applications: Set-Top Boxes
Voltage - Supply: 8V ~ 16V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 20-UFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PDS5100HQ-13 PDS5100HQ-13 Diodes Incorporated ds30471.pdf Description: DIODE SCHOTTKY 100V 5A POWERDI 5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 5 A
Current - Reverse Leakage @ Vr: 3.5 µA @ 100 V
Qualification: AEC-Q101
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DMN61D8L-13 DMN61D8L-13 Diodes Incorporated DMN61D8L-LVT.pdf Description: MOSFET N-CH 60V 470MA SOT23
Input Capacitance (Ciss) (Max) @ Vds: 12.9 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 390mW (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Current - Continuous Drain (Id) @ 25°C: 470mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DMN10H099SFG-7 DMN10H099SFG-7 Diodes Incorporated DMN10H099SFG.pdf Description: MOSFET N-CH 100V 4.2A PWRDI3333
Input Capacitance (Ciss) (Max) @ Vds: 1172 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 25.2 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 980mW (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
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500+0.6 EUR
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2N7002DWQ-7-F 2N7002DWQ-7-F Diodes Incorporated 2N7002DW.pdf Description: MOSFET 2N-CH 60V 0.23A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 310mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 230mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
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AL5801W6Q-7 AL5801W6Q-7 Diodes Incorporated AL5801.pdf Description: IC LED DRVR LIN PWM 350MA SOT26
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Voltage - Supply (Max): 20V
Voltage - Supply (Min): 3.5V
Dimming: PWM
Supplier Device Package: SOT-26
Internal Switch(s): Yes
Current - Output / Channel: 350mA
Applications: Signage
Operating Temperature: -40°C ~ 125°C (TA)
Type: Linear
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output: 1.1V ~ 100V
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
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DMC1028UFDB-7 DMC1028UFDB-7 Diodes Incorporated DMC1028UFDB.pdf Description: MOSFET N/P-CH 12V/20V 6A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.36W
Drain to Source Voltage (Vdss): 12V, 20V
Current - Continuous Drain (Id) @ 25°C: 6A, 3.4A
Input Capacitance (Ciss) (Max) @ Vds: 787pF @ 6V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
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DMC1029UFDB-7 DMC1029UFDB-7 Diodes Incorporated DMC1029UFDB.pdf Description: MOSFET N/P-CH 12V 5.6A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.6A, 3.8A
Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
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DMC2041UFDB-7 DMC2041UFDB-7 Diodes Incorporated DMC2041UFDB.pdf Description: MOSFET N/P-CH 20V 4.7A 6UDFN
Part Status: Active
Supplier Device Package: U-DFN2020-6 (Type B)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 713pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.2A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.4W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
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DMC3400SDW-7 DMC3400SDW-7 Diodes Incorporated DMC3400SDW.pdf Description: MOSFET N/P-CH 30V 0.65A SOT363
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 650mA, 450mA
Drain to Source Voltage (Vdss): 30V
Power - Max: 310mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
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DMG3404L-7 DMG3404L-7 Diodes Incorporated DMG3404L.pdf Description: MOSFET N-CH 30V 4.2A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.8A, 10V
Power Dissipation (Max): 780mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 641 pF @ 15 V
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DMG3406L-7 DMG3406L-7 Diodes Incorporated DMG3406L.pdf Description: MOSFET N-CH 30V 3.6A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.6A, 10V
Power Dissipation (Max): 770mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 495 pF @ 15 V
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50+0.36 EUR
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DMN1029UFDB-7 DMN1029UFDB-7 Diodes Incorporated DMN1029UFDB.pdf Description: MOSFET 2N-CH 12V 5.6A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.6A
Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
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DMN10H170SVT-7 DMN10H170SVT-7 Diodes Incorporated DMN10H170SVT.pdf Description: MOSFET N-CH 100V 2.6A TSOT26
Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TSOT-26
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
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DMN2041UFDB-7 DMN2041UFDB-7 Diodes Incorporated DMN2041UFDB.pdf Description: MOSFET 2N-CH 20V 4.7A 6UDFN
Produkt ist nicht verfügbar
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DMN2046U-7 DMN2046U-7 Diodes Incorporated DMN2046U.pdf Description: MOSFET N-CH 20V 3.4A SOT23
Input Capacitance (Ciss) (Max) @ Vds: 292 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 760mW (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 3.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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57+0.31 EUR
100+0.2 EUR
500+0.14 EUR
1000+0.13 EUR
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DMN3042L-7 DMN3042L-7 Diodes Incorporated DMN3042L.pdf Description: MOSFET N-CH 30V 5.8A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 5.8A, 10V
Power Dissipation (Max): 720mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 15 V
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DMN32D4SDW-7 DMN32D4SDW-7 Diodes Incorporated DMN32D4SDW.pdf Description: MOSFET 2N-CH 30V 0.65A SOT363
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 250mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 650mA
Drain to Source Voltage (Vdss): 30V
Power - Max: 290mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Supplier Device Package: SOT-363
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DMP1046UFDB-7 DMP1046UFDB-7 Diodes Incorporated DMP1046UFDB.pdf Description: MOSFET 2P-CH 12V 3.8A 6UDFN
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: U-DFN2020-6 (Type B)
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17.9nC @ 8V
Rds On (Max) @ Id, Vgs: 61mOhm @ 3.6A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 915pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Drain to Source Voltage (Vdss): 12V
Power - Max: 1.4W
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DMP2060UFDB-7 DMP2060UFDB-7 Diodes Incorporated DMP2060UFDB.pdf Description: MOSFET 2P-CH 20V 3.2A 6UDFN
Supplier Device Package: U-DFN2020-6 (Type B)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.9A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 881pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.4W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
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DMP2200UDW-7 DMP2200UDW-7 Diodes Incorporated DMP2200UDW.pdf Description: MOSFET 2P-CH 20V 0.9A SOT363
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 260mOhm @ 880mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 184pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 900mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 450mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
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DMP3068L-7 DMP3068L-7 Diodes Incorporated DMP3068L.pdf Description: MOSFET P-CH 30V 3.3A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 4.2A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 708 pF @ 15 V
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DMP4065S-7 DMP4065S-7 Diodes Incorporated DMP4065S.pdf Description: MOSFET P-CH 40V 2.4A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4.2A, 10V
Power Dissipation (Max): 720mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 587 pF @ 20 V
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DSS4160TQ-7 DSS4160TQ-7 Diodes Incorporated DSS4160T.pdf Description: TRANS NPN 60V 1A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 280mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 725 mW
Grade: Automotive
Qualification: AEC-Q101
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FMMT720QTA FMMT720QTA Diodes Incorporated FMMT720.pdf Description: TRANS PNP 40V 1.5A SOT23-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1.5 A
Part Status: Active
Supplier Device Package: SOT-23-3
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 330mV @ 100mA, 1.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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S1MWF-7 S1MWF-7 Diodes Incorporated S1MWF.pdf Description: DIODE GEN PURP 1KV 1A SOD123F
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SDM2U20SD3-7 SDM2U20SD3-7 Diodes Incorporated SDM2U20SD3.pdf Description: DIODE SCHOTTKY 20V 2A SOD323
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 525 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 54pF @ 5V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
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B240Q-13-F B240Q-13-F Diodes Incorporated B220_A-B260_A.pdf Description: DIODE SCHOTTKY 40V 2A SMB
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
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B540CQ-13-F B540CQ-13-F Diodes Incorporated B520C-B560C.pdf Description: DIODE SCHOTTKY 40V 5A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 300pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
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ZLPM8014JB20TC ZLPM8014JB20TC Diodes Incorporated ZLPM8014.pdf Description: IC LNB CTLR PWR SUPPLY 20UQFN
Supplier Device Package: U-QFN4040-20
Current - Supply: 6mA
Applications: Set-Top Boxes
Voltage - Supply: 8V ~ 16V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 20-UFQFN Exposed Pad
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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PDS5100HQ-13 PDS5100HQ-13 Diodes Incorporated ds30471.pdf Description: DIODE SCHOTTKY 100V 5A POWERDI 5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 5 A
Current - Reverse Leakage @ Vr: 3.5 µA @ 100 V
Qualification: AEC-Q101
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DMC1028UFDB-13 DMC1028UFDB-13 Diodes Incorporated DMC1028UFDB.pdf Description: MOSFET N/P-CH 12V/20V 6A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.36W
Drain to Source Voltage (Vdss): 12V, 20V
Current - Continuous Drain (Id) @ 25°C: 6A, 3.4A
Input Capacitance (Ciss) (Max) @ Vds: 787pF @ 6V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
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DMC1029UFDB-13 DMC1029UFDB-13 Diodes Incorporated DMC1029UFDB.pdf Description: MOSFET N/P-CH 12V 5.6A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.6A, 3.8A
Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
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DMC2041UFDB-13 DMC2041UFDB-13 Diodes Incorporated DMC2041UFDB.pdf Description: MOSFET N/P-CH 20V 6UDFN
Part Status: Active
Supplier Device Package: U-DFN2020-6 (Type B)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 713pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.2A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Technology: MOSFET (Metal Oxide)
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DMC3400SDW-13 DMC3400SDW-13 Diodes Incorporated DMC3400SDW.pdf Description: MOSFET N/P-CH 30V 0.65A SOT363
Power - Max: 310mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 650mA, 450mA
Drain to Source Voltage (Vdss): 30V
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DMG3404L-13 DMG3404L-13 Diodes Incorporated DMG3404L.pdf Description: MOSFET N-CH 30V 4.2A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.8A, 10V
Power Dissipation (Max): 780mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 641 pF @ 15 V
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DMG3406L-13 DMG3406L-13 Diodes Incorporated DMG3406L.pdf Description: MOSFET N-CH 30V 3.6A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.6A, 10V
Power Dissipation (Max): 770mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 495 pF @ 15 V
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DMN1029UFDB-13 DMN1029UFDB-13 Diodes Incorporated DMN1029UFDB.pdf Description: MOSFET 2N-CH 12V 5.6A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.6A
Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
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DMN10H170SFDE-13 DMN10H170SFDE-13 Diodes Incorporated DMN10H170SFDE.pdf Description: MOSFET N-CH 100V 2.9A 6UDFN
Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: U-DFN2020-6 (Type E)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 660mW (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Tape & Reel (TR)
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DMN10H170SVT-13 DMN10H170SVT-13 Diodes Incorporated DMN10H170SVT.pdf Description: MOSFET N-CH 100V 2.6A TSOT26
Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TSOT-26
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
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DMN2041UFDB-13 DMN2041UFDB-13 Diodes Incorporated DMN2041UFDB.pdf Description: MOSFET 2N-CH 20V 4.7A 6UDFN
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DMN2046U-13 DMN2046U-13 Diodes Incorporated DMN2046U.pdf Description: MOSFET N-CH 20V 3.4A SOT23
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DMN32D4SDW-13 DMN32D4SDW-13 Diodes Incorporated DMN32D4SDW.pdf Description: MOSFET 2N-CH 30V 0.65A SOT363
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 250mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 650mA
Drain to Source Voltage (Vdss): 30V
Power - Max: 290mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
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DMP2060UFDB-13 DMP2060UFDB-13 Diodes Incorporated DMP2060UFDB.pdf Description: MOSFET 2P-CH 20V 3.2A 6UDFN
Supplier Device Package: U-DFN2020-6 (Type B)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.9A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 881pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.4W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
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DMP2200UDW-13 DMP2200UDW-13 Diodes Incorporated DMP2200UDW.pdf Description: MOSFET 2P-CH 20V 0.9A SOT363
Current - Continuous Drain (Id) @ 25°C: 900mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 450mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 260mOhm @ 880mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 184pF @ 10V
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DMP3068L-13 DMP3068L-13 Diodes Incorporated DMP3068L.pdf Description: MOSFET P-CH 30V 3.3A SOT23
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 708 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 15.9 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 4.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
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DMN3016LSS-13 DMN3016LSS-13 Diodes Incorporated DMN3016LSS.pdf Description: MOSFET N-CH 30V 10.3A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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AP3785HMTR-G1 AP3785HMTR-G1 Diodes Incorporated Description: IC OFFLINE SWITCH FLYBACK 8SO
Power (Watts): 15 W
Voltage - Start Up: 13 V
Fault Protection: Over Temperature, Over Voltage, Short Circuit
Supplier Device Package: 8-SO
Voltage - Supply (Vcc/Vdd): 5.9V ~ 30V
Topology: Flyback
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: 80kHz
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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B2100AF-13 B2100AF-13 Diodes Incorporated B2100AF.pdf Description: DIODE SCHOTTKY 100V 2A SMAF
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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B360AM-13-F B360AM-13-F Diodes Incorporated B360AM.pdf Description: DIODE SCHOTTKY 60V 3A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
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DDZ15Q-7 DDZ15Q-7 Diodes Incorporated DDZ5V1B-DDZ43.pdf Description: DIODE ZENER 15V 310MW SOD123
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DDZ16Q-7 DDZ16Q-7 Diodes Incorporated DDZ5V1B-DDZ43.pdf Description: DIODE ZENER 16V 310MW SOD123
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DDZ17Q-7 DDZ17Q-7 Diodes Incorporated ds30407.pdf Description: DIODE ZENER 17V 310MW SOD123
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FMMT493QTA FMMT493QTA Diodes Incorporated FMMT493.pdf Description: TRANS NPN 100V 1A SOT-23-3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: SOT-23-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 10V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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FMMT593QTA FMMT593QTA Diodes Incorporated FMMT593.pdf Description: TRANS PNP 100V 1A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23 (Type DN)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
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FZT493ATA FZT493ATA Diodes Incorporated FZT493A.pdf Description: TRANS NPN 100V 1A SOT223
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S1MWF-7 S1MWF.pdf
S1MWF-7
Hersteller: Diodes Incorporated
Description: DIODE GEN PURP 1KV 1A SOD123F
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SDM2U20SD3-7 SDM2U20SD3.pdf
SDM2U20SD3-7
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 20V 2A SOD323
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 525 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 54pF @ 5V, 1MHz
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B240Q-13-F B220_A-B260_A.pdf
B240Q-13-F
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 2A SMB
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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B540CQ-13-F B520C-B560C.pdf
B540CQ-13-F
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 5A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 300pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
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ZLPM8014JB20TC ZLPM8014.pdf
ZLPM8014JB20TC
Hersteller: Diodes Incorporated
Description: IC LNB CTLR PWR SUPPLY 20UQFN
Supplier Device Package: U-QFN4040-20
Current - Supply: 6mA
Applications: Set-Top Boxes
Voltage - Supply: 8V ~ 16V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 20-UFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PDS5100HQ-13 ds30471.pdf
PDS5100HQ-13
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 100V 5A POWERDI 5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 5 A
Current - Reverse Leakage @ Vr: 3.5 µA @ 100 V
Qualification: AEC-Q101
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5000+0.42 EUR
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DMN61D8L-13 DMN61D8L-LVT.pdf
DMN61D8L-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 470MA SOT23
Input Capacitance (Ciss) (Max) @ Vds: 12.9 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 390mW (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Current - Continuous Drain (Id) @ 25°C: 470mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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DMN10H099SFG-7 DMN10H099SFG.pdf
DMN10H099SFG-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 4.2A PWRDI3333
Input Capacitance (Ciss) (Max) @ Vds: 1172 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 25.2 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 980mW (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 11990 Stücke:
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16+1.13 EUR
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2N7002DWQ-7-F 2N7002DW.pdf
2N7002DWQ-7-F
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.23A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 310mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 230mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
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28+0.65 EUR
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AL5801W6Q-7 AL5801.pdf
AL5801W6Q-7
Hersteller: Diodes Incorporated
Description: IC LED DRVR LIN PWM 350MA SOT26
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Voltage - Supply (Max): 20V
Voltage - Supply (Min): 3.5V
Dimming: PWM
Supplier Device Package: SOT-26
Internal Switch(s): Yes
Current - Output / Channel: 350mA
Applications: Signage
Operating Temperature: -40°C ~ 125°C (TA)
Type: Linear
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output: 1.1V ~ 100V
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
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DMC1028UFDB-7 DMC1028UFDB.pdf
DMC1028UFDB-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 12V/20V 6A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.36W
Drain to Source Voltage (Vdss): 12V, 20V
Current - Continuous Drain (Id) @ 25°C: 6A, 3.4A
Input Capacitance (Ciss) (Max) @ Vds: 787pF @ 6V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
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DMC1029UFDB-7 DMC1029UFDB.pdf
DMC1029UFDB-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 12V 5.6A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.6A, 3.8A
Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
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10+1.81 EUR
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DMC2041UFDB-7 DMC2041UFDB.pdf
DMC2041UFDB-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 20V 4.7A 6UDFN
Part Status: Active
Supplier Device Package: U-DFN2020-6 (Type B)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 713pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.2A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.4W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
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10+1.88 EUR
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DMC3400SDW-7 DMC3400SDW.pdf
DMC3400SDW-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 0.65A SOT363
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 650mA, 450mA
Drain to Source Voltage (Vdss): 30V
Power - Max: 310mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
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33+0.55 EUR
53+0.33 EUR
100+0.21 EUR
500+0.15 EUR
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DMG3404L-7 DMG3404L.pdf
DMG3404L-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 4.2A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.8A, 10V
Power Dissipation (Max): 780mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 641 pF @ 15 V
Produkt ist nicht verfügbar
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DMG3406L-7 DMG3406L.pdf
DMG3406L-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 3.6A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.6A, 10V
Power Dissipation (Max): 770mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 495 pF @ 15 V
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31+0.58 EUR
50+0.36 EUR
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500+0.17 EUR
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DMN1029UFDB-7 DMN1029UFDB.pdf
DMN1029UFDB-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 12V 5.6A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.6A
Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
auf Bestellung 69827 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.97 EUR
30+0.6 EUR
100+0.38 EUR
500+0.29 EUR
1000+0.26 EUR
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DMN10H170SVT-7 DMN10H170SVT.pdf
DMN10H170SVT-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 2.6A TSOT26
Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TSOT-26
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 877630 Stücke:
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23+0.79 EUR
27+0.68 EUR
100+0.47 EUR
500+0.37 EUR
1000+0.33 EUR
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DMN2041UFDB-7 DMN2041UFDB.pdf
DMN2041UFDB-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 4.7A 6UDFN
Produkt ist nicht verfügbar
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DMN2046U-7 DMN2046U.pdf
DMN2046U-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 3.4A SOT23
Input Capacitance (Ciss) (Max) @ Vds: 292 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 760mW (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 3.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 198120 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
35+0.51 EUR
57+0.31 EUR
100+0.2 EUR
500+0.14 EUR
1000+0.13 EUR
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DMN3042L-7 DMN3042L.pdf
DMN3042L-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 5.8A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 5.8A, 10V
Power Dissipation (Max): 720mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 15 V
auf Bestellung 83734 Stücke:
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Anzahl Preis
26+0.69 EUR
43+0.42 EUR
100+0.27 EUR
500+0.2 EUR
1000+0.18 EUR
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DMN32D4SDW-7 DMN32D4SDW.pdf
DMN32D4SDW-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 0.65A SOT363
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 250mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 650mA
Drain to Source Voltage (Vdss): 30V
Power - Max: 290mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Supplier Device Package: SOT-363
auf Bestellung 152468 Stücke:
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Anzahl Preis
24+0.76 EUR
34+0.53 EUR
100+0.27 EUR
500+0.22 EUR
1000+0.16 EUR
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DMP1046UFDB-7 DMP1046UFDB.pdf
DMP1046UFDB-7
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 12V 3.8A 6UDFN
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: U-DFN2020-6 (Type B)
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17.9nC @ 8V
Rds On (Max) @ Id, Vgs: 61mOhm @ 3.6A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 915pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Drain to Source Voltage (Vdss): 12V
Power - Max: 1.4W
auf Bestellung 14097 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.93 EUR
31+0.57 EUR
100+0.37 EUR
500+0.28 EUR
1000+0.25 EUR
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DMP2060UFDB-7 DMP2060UFDB.pdf
DMP2060UFDB-7
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 20V 3.2A 6UDFN
Supplier Device Package: U-DFN2020-6 (Type B)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.9A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 881pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.4W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 2075 Stücke:
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Anzahl Preis
9+2.06 EUR
14+1.29 EUR
100+0.85 EUR
500+0.66 EUR
1000+0.6 EUR
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DMP2200UDW-7 DMP2200UDW.pdf
DMP2200UDW-7
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 20V 0.9A SOT363
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 260mOhm @ 880mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 184pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 900mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 450mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 4152 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
32+0.56 EUR
52+0.34 EUR
100+0.21 EUR
500+0.16 EUR
1000+0.14 EUR
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DMP3068L-7 DMP3068L.pdf
DMP3068L-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 3.3A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 4.2A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 708 pF @ 15 V
auf Bestellung 4494 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
31+0.58 EUR
50+0.36 EUR
100+0.22 EUR
500+0.17 EUR
1000+0.15 EUR
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DMP4065S-7 DMP4065S.pdf
DMP4065S-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 40V 2.4A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4.2A, 10V
Power Dissipation (Max): 720mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 587 pF @ 20 V
auf Bestellung 18077 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
26+0.69 EUR
42+0.42 EUR
100+0.27 EUR
500+0.2 EUR
1000+0.18 EUR
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DSS4160TQ-7 DSS4160T.pdf
DSS4160TQ-7
Hersteller: Diodes Incorporated
Description: TRANS NPN 60V 1A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 280mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 725 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2950 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
27+0.67 EUR
43+0.42 EUR
100+0.26 EUR
500+0.2 EUR
1000+0.18 EUR
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FMMT720QTA FMMT720.pdf
FMMT720QTA
Hersteller: Diodes Incorporated
Description: TRANS PNP 40V 1.5A SOT23-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1.5 A
Part Status: Active
Supplier Device Package: SOT-23-3
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 330mV @ 100mA, 1.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 86705 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+1.02 EUR
26+0.68 EUR
100+0.46 EUR
500+0.36 EUR
1000+0.33 EUR
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S1MWF-7 S1MWF.pdf
S1MWF-7
Hersteller: Diodes Incorporated
Description: DIODE GEN PURP 1KV 1A SOD123F
Produkt ist nicht verfügbar
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SDM2U20SD3-7 SDM2U20SD3.pdf
SDM2U20SD3-7
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 20V 2A SOD323
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 525 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 54pF @ 5V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
auf Bestellung 4916 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
44+0.4 EUR
66+0.27 EUR
100+0.22 EUR
500+0.16 EUR
1000+0.15 EUR
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B240Q-13-F B220_A-B260_A.pdf
B240Q-13-F
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 2A SMB
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
auf Bestellung 67790 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
33+0.55 EUR
48+0.37 EUR
100+0.3 EUR
500+0.23 EUR
1000+0.2 EUR
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B540CQ-13-F B520C-B560C.pdf
B540CQ-13-F
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 5A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 300pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2535 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.36 EUR
21+0.84 EUR
100+0.55 EUR
500+0.42 EUR
1000+0.38 EUR
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ZLPM8014JB20TC ZLPM8014.pdf
ZLPM8014JB20TC
Hersteller: Diodes Incorporated
Description: IC LNB CTLR PWR SUPPLY 20UQFN
Supplier Device Package: U-QFN4040-20
Current - Supply: 6mA
Applications: Set-Top Boxes
Voltage - Supply: 8V ~ 16V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 20-UFQFN Exposed Pad
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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PDS5100HQ-13 ds30471.pdf
PDS5100HQ-13
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 100V 5A POWERDI 5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 5 A
Current - Reverse Leakage @ Vr: 3.5 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.78 EUR
16+1.11 EUR
100+0.73 EUR
500+0.56 EUR
1000+0.51 EUR
2000+0.47 EUR
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DMC1028UFDB-13 DMC1028UFDB.pdf
DMC1028UFDB-13
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 12V/20V 6A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.36W
Drain to Source Voltage (Vdss): 12V, 20V
Current - Continuous Drain (Id) @ 25°C: 6A, 3.4A
Input Capacitance (Ciss) (Max) @ Vds: 787pF @ 6V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Produkt ist nicht verfügbar
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DMC1029UFDB-13 DMC1029UFDB.pdf
DMC1029UFDB-13
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 12V 5.6A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.6A, 3.8A
Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Produkt ist nicht verfügbar
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DMC2041UFDB-13 DMC2041UFDB.pdf
DMC2041UFDB-13
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 20V 6UDFN
Part Status: Active
Supplier Device Package: U-DFN2020-6 (Type B)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 713pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.2A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar
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DMC3400SDW-13 DMC3400SDW.pdf
DMC3400SDW-13
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 0.65A SOT363
Power - Max: 310mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 650mA, 450mA
Drain to Source Voltage (Vdss): 30V
auf Bestellung 90000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.088 EUR
20000+0.08 EUR
30000+0.077 EUR
Mindestbestellmenge: 10000
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DMG3404L-13 DMG3404L.pdf
DMG3404L-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 4.2A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.8A, 10V
Power Dissipation (Max): 780mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 641 pF @ 15 V
Produkt ist nicht verfügbar
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DMG3406L-13 DMG3406L.pdf
DMG3406L-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 3.6A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.6A, 10V
Power Dissipation (Max): 770mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 495 pF @ 15 V
Produkt ist nicht verfügbar
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DMN1029UFDB-13 DMN1029UFDB.pdf
DMN1029UFDB-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 12V 5.6A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.6A
Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Produkt ist nicht verfügbar
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DMN10H170SFDE-13 DMN10H170SFDE.pdf
DMN10H170SFDE-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 2.9A 6UDFN
Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: U-DFN2020-6 (Type E)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 660mW (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Tape & Reel (TR)
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.24 EUR
20000+0.23 EUR
Mindestbestellmenge: 10000
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DMN10H170SVT-13 DMN10H170SVT.pdf
DMN10H170SVT-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 2.6A TSOT26
Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TSOT-26
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
auf Bestellung 10000 Stücke:
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Anzahl Preis
10000+0.24 EUR
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DMN2041UFDB-13 DMN2041UFDB.pdf
DMN2041UFDB-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 4.7A 6UDFN
Produkt ist nicht verfügbar
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DMN2046U-13 DMN2046U.pdf
DMN2046U-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 3.4A SOT23
Produkt ist nicht verfügbar
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DMN32D4SDW-13 DMN32D4SDW.pdf
DMN32D4SDW-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 0.65A SOT363
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 250mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 650mA
Drain to Source Voltage (Vdss): 30V
Power - Max: 290mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
auf Bestellung 80000 Stücke:
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Anzahl Preis
10000+0.11 EUR
50000+0.091 EUR
Mindestbestellmenge: 10000
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DMP2060UFDB-13 DMP2060UFDB.pdf
DMP2060UFDB-13
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 20V 3.2A 6UDFN
Supplier Device Package: U-DFN2020-6 (Type B)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.9A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 881pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.4W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DMP2200UDW-13 DMP2200UDW.pdf
DMP2200UDW-13
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 20V 0.9A SOT363
Current - Continuous Drain (Id) @ 25°C: 900mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 450mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 260mOhm @ 880mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 184pF @ 10V
auf Bestellung 170000 Stücke:
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Anzahl Preis
10000+0.084 EUR
20000+0.077 EUR
30000+0.073 EUR
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DMP3068L-13 DMP3068L.pdf
DMP3068L-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 3.3A SOT23
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 708 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 15.9 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 4.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 40000 Stücke:
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Anzahl Preis
10000+0.099 EUR
30000+0.097 EUR
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DMN3016LSS-13 DMN3016LSS.pdf
DMN3016LSS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 10.3A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 7500 Stücke:
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Anzahl Preis
2500+0.3 EUR
5000+0.26 EUR
7500+0.25 EUR
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AP3785HMTR-G1
AP3785HMTR-G1
Hersteller: Diodes Incorporated
Description: IC OFFLINE SWITCH FLYBACK 8SO
Power (Watts): 15 W
Voltage - Start Up: 13 V
Fault Protection: Over Temperature, Over Voltage, Short Circuit
Supplier Device Package: 8-SO
Voltage - Supply (Vcc/Vdd): 5.9V ~ 30V
Topology: Flyback
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: 80kHz
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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B2100AF-13 B2100AF.pdf
B2100AF-13
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 100V 2A SMAF
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
auf Bestellung 180000 Stücke:
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Anzahl Preis
10000+0.18 EUR
20000+0.17 EUR
30000+0.16 EUR
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B360AM-13-F B360AM.pdf
B360AM-13-F
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 60V 3A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 55000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.28 EUR
10000+0.25 EUR
15000+0.24 EUR
25000+0.23 EUR
35000+0.22 EUR
Mindestbestellmenge: 5000
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DDZ15Q-7 DDZ5V1B-DDZ43.pdf
DDZ15Q-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 15V 310MW SOD123
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.096 EUR
6000+0.084 EUR
15000+0.071 EUR
30000+0.067 EUR
Mindestbestellmenge: 3000
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DDZ16Q-7 DDZ5V1B-DDZ43.pdf
DDZ16Q-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 16V 310MW SOD123
auf Bestellung 648000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.096 EUR
6000+0.084 EUR
15000+0.071 EUR
30000+0.067 EUR
75000+0.063 EUR
150000+0.054 EUR
Mindestbestellmenge: 3000
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DDZ17Q-7 ds30407.pdf
DDZ17Q-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 17V 310MW SOD123
auf Bestellung 66000 Stücke:
Lieferzeit 10-14 Tag (e)
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FMMT493QTA FMMT493.pdf
FMMT493QTA
Hersteller: Diodes Incorporated
Description: TRANS NPN 100V 1A SOT-23-3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: SOT-23-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 10V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 174000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.22 EUR
6000+0.2 EUR
9000+0.19 EUR
15000+0.18 EUR
21000+0.17 EUR
75000+0.16 EUR
Mindestbestellmenge: 3000
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FMMT593QTA FMMT593.pdf
FMMT593QTA
Hersteller: Diodes Incorporated
Description: TRANS PNP 100V 1A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23 (Type DN)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.26 EUR
6000+0.24 EUR
Mindestbestellmenge: 3000
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FZT493ATA FZT493A.pdf
FZT493ATA
Hersteller: Diodes Incorporated
Description: TRANS NPN 100V 1A SOT223
Produkt ist nicht verfügbar
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