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PI7C9X762BZHE PI7C9X762BZHE Diodes Incorporated PI7C9X762.pdf Description: IC BRIDGE CTRLR I2C/SPI 32-TQFN
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PI2EQX502TZHEX PI2EQX502TZHEX Diodes Incorporated PI2EQX502T-Prod-Brief.pdf Description: IC REDRIVER USB 3.0 1CH 16TQFN
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PI3DBS3224ZNAEX PI3DBS3224ZNAEX Diodes Incorporated PI3DBS3224.pdf Description: IC MUX/DEMUX HS 2:4 20-TQFN
Features: Bi-Directional, USB 2.0
Packaging: Tape & Reel (TR)
Package / Case: 20-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 19Ohm
-3db Bandwidth: 1.2GHz
Supplier Device Package: 20-TQFN (3x3)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 2
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PI4ULS3V302XVEX PI4ULS3V302XVEX Diodes Incorporated PI4ULS3V302.pdf Description: IC TRANSLTR BIDIRECTIONAL 8UDFN
Features: Auto-Direction Sensing, Power-Off Protection
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN
Output Type: Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 140Mbps
Supplier Device Package: 8-UDFN (1.6x1.2)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 0.85 V ~ 2.7 V
Voltage - VCCB: 1.35 V ~ 3.6 V
Part Status: Active
Number of Circuits: 1
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PI2EQX502TZHEX PI2EQX502TZHEX Diodes Incorporated PI2EQX502T-Prod-Brief.pdf Description: IC REDRIVER USB 3.0 1CH 16TQFN
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PI4ULS3V302XVEX PI4ULS3V302XVEX Diodes Incorporated PI4ULS3V302.pdf Description: IC TRANSLTR BIDIRECTIONAL 8UDFN
Features: Auto-Direction Sensing, Power-Off Protection
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN
Output Type: Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 140Mbps
Supplier Device Package: 8-UDFN (1.6x1.2)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 0.85 V ~ 2.7 V
Voltage - VCCB: 1.35 V ~ 3.6 V
Part Status: Active
Number of Circuits: 1
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PI3USB102ZLEX PI3USB102ZLEX Diodes Incorporated PI3USB102.pdf Description: IC SW USB 2.0 10-TQFN
Features: Bi-Directional, USB 2.0
Packaging: Cut Tape (CT)
Package / Case: 10-WFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 5Ohm
-3db Bandwidth: 810MHz
Supplier Device Package: 10-TQFN (1.3x1.6)
Voltage - Supply, Single (V+): 2.7V ~ 4.2V
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 1
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PI3USB102ZMEX PI3USB102ZMEX Diodes Incorporated PI3USB102.pdf Description: IC USB SWITCH DUAL 2X1 10UQFN
Features: Bi-Directional, USB 2.0
Packaging: Cut Tape (CT)
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 5Ohm
-3db Bandwidth: 810MHz
Supplier Device Package: 10-UQFN (1.8x1.4)
Voltage - Supply, Single (V+): 2.7V ~ 4.2V
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 1
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PI3USB103ZLEX PI3USB103ZLEX Diodes Incorporated PI3USB103.pdf Description: IC USB SWITCH HS 10TQFN
Features: Bi-Directional, USB 2.0
Packaging: Cut Tape (CT)
Package / Case: 10-WFQFN
Mounting Type: Surface Mount
Applications: USB
On-State Resistance (Max): 3Ohm (Typ)
Supplier Device Package: 10-TQFN (1.3x1.6)
Voltage - Supply, Single (V+): 2.7V ~ 4.4V
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 1
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PI3USB221XAEX PI3USB221XAEX Diodes Incorporated PI3USB221.pdf Description: IC USB SWITCH 10TLLGA
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PI3USB223ZMEX PI3USB223ZMEX Diodes Incorporated PI3USB223.pdf Description: IC USB SWITCH 10UQFN
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PI3USB223ZMEX PI3USB223ZMEX Diodes Incorporated PI3USB223.pdf Description: IC USB SWITCH 10UQFN
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DMN3016LK3-13 DMN3016LK3-13 Diodes Incorporated DMN3016LK3.pdf Description: MOSFET N-CH 30V 12.4A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 15 V
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DMP6110SSS-13 DMP6110SSS-13 Diodes Incorporated DMP6110SSS.pdf Description: MOSFET P-CH 60V 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 30 V
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PAM8408DR PAM8408DR Diodes Incorporated PAM8408.pdf Description: IC AMP CLASS D STEREO 2.4W 16SO
Features: Depop, Short-Circuit and Thermal Protection
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 6V
Max Output Power x Channels @ Load: 2.4W x 2 @ 4Ohm
Supplier Device Package: 16-SO
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLV271CS-13 TLV271CS-13 Diodes Incorporated TLV27x.pdf Description: IC CMOS 1 CIRCUIT 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: 0°C ~ 70°C
Current - Supply: 550µA
Slew Rate: 2V/µs
Gain Bandwidth Product: 2 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 500 µV
Supplier Device Package: 8-SO
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 8 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 16 V
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TLV272CM8-13 TLV272CM8-13 Diodes Incorporated TLV27x.pdf Description: IC CMOS 2 CIRCUIT 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: 0°C ~ 70°C
Current - Supply: 550µA (x2 Channels)
Slew Rate: 2V/µs
Gain Bandwidth Product: 1.9 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 500 µV
Supplier Device Package: 8-MSOP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 8 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 16 V
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TLV272CS-13 TLV272CS-13 Diodes Incorporated TLV27x.pdf Description: IC CMOS 2 CIRCUIT 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: 0°C ~ 70°C
Current - Supply: 550µA (x2 Channels)
Slew Rate: 2V/µs
Gain Bandwidth Product: 1.9 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 500 µV
Supplier Device Package: 8-SO
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 8 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 16 V
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TLV272IM8-13 TLV272IM8-13 Diodes Incorporated TLV27x.pdf Description: IC CMOS 2 CIRCUIT 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 550µA (x2 Channels)
Slew Rate: 2V/µs
Gain Bandwidth Product: 1.9 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 500 µV
Supplier Device Package: 8-MSOP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 8 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 16 V
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TLV272IS-13 TLV272IS-13 Diodes Incorporated TLV27x.pdf Description: IC CMOS 2 CIRCUIT 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 550µA (x2 Channels)
Slew Rate: 2V/µs
Gain Bandwidth Product: 1.9 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 500 µV
Supplier Device Package: 8-SO
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 8 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 16 V
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DMN53D0L-7 DMN53D0L-7 Diodes Incorporated DMN53D0L.pdf Description: MOSFET N-CH 50V 500MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 370mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 25 V
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3000+0.10 EUR
6000+0.09 EUR
9000+0.08 EUR
30000+0.08 EUR
75000+0.07 EUR
150000+0.06 EUR
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DMN53D0LDW-7 DMN53D0LDW-7 Diodes Incorporated DMN53D0LDW.pdf Description: MOSFET 2N-CH 50V 0.36A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 310mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 360mA
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 25V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
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15000+0.08 EUR
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DMN53D0U-7 DMN53D0U-7 Diodes Incorporated DMN53D0U.pdf Description: MOSFET N-CH 50V 300MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Power Dissipation (Max): 520mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 37.1 pF @ 25 V
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3000+0.09 EUR
6000+0.08 EUR
9000+0.07 EUR
30000+0.07 EUR
75000+0.06 EUR
150000+0.05 EUR
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DT2042-04TS-7 DT2042-04TS-7 Diodes Incorporated DT2042-04TS.pdf Description: TVS DIODE 5.5VWM 10.5VC TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 85°C (TA)
Applications: HDMI
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: TSOT-26
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 105W
Power Line Protection: Yes
auf Bestellung 1560000 Stücke:
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9000+0.10 EUR
15000+0.09 EUR
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30000+0.08 EUR
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AP3598AFNTR-G1 AP3598AFNTR-G1 Diodes Incorporated AP3598A.pdf Description: IC REG CTRLR BUCK PSI 24UQFN
Produkt ist nicht verfügbar
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SDM2U20CSP-7 SDM2U20CSP-7 Diodes Incorporated SDM2U20CSP.pdf Description: DIODE SCHOTTKY 20V 2A X3WLB16082
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 115pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: X3-WLB1608-2
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 20 V
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DMN3016LK3-13 DMN3016LK3-13 Diodes Incorporated DMN3016LK3.pdf Description: MOSFET N-CH 30V 12.4A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 15 V
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100+0.54 EUR
500+0.41 EUR
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DMP6110SSS-13 DMP6110SSS-13 Diodes Incorporated DMP6110SSS.pdf Description: MOSFET P-CH 60V 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 30 V
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100+0.51 EUR
500+0.40 EUR
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PAM8408DR PAM8408DR Diodes Incorporated PAM8408.pdf Description: IC AMP CLASS D STEREO 2.4W 16SO
Packaging: Cut Tape (CT)
Features: Depop, Short-Circuit and Thermal Protection
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 6V
Max Output Power x Channels @ Load: 2.4W x 2 @ 4Ohm
Supplier Device Package: 16-SO
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLV271CS-13 TLV271CS-13 Diodes Incorporated TLV27x.pdf Description: IC CMOS 1 CIRCUIT 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: 0°C ~ 70°C
Current - Supply: 550µA
Slew Rate: 2V/µs
Gain Bandwidth Product: 2 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 500 µV
Supplier Device Package: 8-SO
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 8 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 16 V
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TLV272CM8-13 TLV272CM8-13 Diodes Incorporated TLV27x.pdf Description: IC CMOS 2 CIRCUIT 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: 0°C ~ 70°C
Current - Supply: 550µA (x2 Channels)
Slew Rate: 2V/µs
Gain Bandwidth Product: 1.9 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 500 µV
Supplier Device Package: 8-MSOP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 8 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 16 V
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TLV272CS-13 TLV272CS-13 Diodes Incorporated TLV27x.pdf Description: IC CMOS 2 CIRCUIT 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: 0°C ~ 70°C
Current - Supply: 550µA (x2 Channels)
Slew Rate: 2V/µs
Gain Bandwidth Product: 1.9 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 500 µV
Supplier Device Package: 8-SO
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 8 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 16 V
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TLV272IM8-13 TLV272IM8-13 Diodes Incorporated TLV27x.pdf Description: IC CMOS 2 CIRCUIT 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 550µA (x2 Channels)
Slew Rate: 2V/µs
Gain Bandwidth Product: 1.9 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 500 µV
Supplier Device Package: 8-MSOP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 8 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 16 V
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TLV272IS-13 TLV272IS-13 Diodes Incorporated TLV27x.pdf Description: IC CMOS 2 CIRCUIT 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 550µA (x2 Channels)
Slew Rate: 2V/µs
Gain Bandwidth Product: 1.9 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 500 µV
Supplier Device Package: 8-SO
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 8 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 16 V
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DMN53D0L-7 DMN53D0L-7 Diodes Incorporated DMN53D0L.pdf Description: MOSFET N-CH 50V 500MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 370mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 25 V
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DMN53D0LDW-7 DMN53D0LDW-7 Diodes Incorporated DMN53D0LDW.pdf Description: MOSFET 2N-CH 50V 0.36A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 310mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 360mA
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 25V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
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DMN53D0U-7 DMN53D0U-7 Diodes Incorporated DMN53D0U.pdf Description: MOSFET N-CH 50V 300MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Power Dissipation (Max): 520mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 37.1 pF @ 25 V
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DT2042-04TS-7 DT2042-04TS-7 Diodes Incorporated DT2042-04TS.pdf Description: TVS DIODE 5.5VWM 10.5VC TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 85°C (TA)
Applications: HDMI
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: TSOT-26
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 105W
Power Line Protection: Yes
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AP3598AFNTR-G1 AP3598AFNTR-G1 Diodes Incorporated AP3598A.pdf Description: IC REG CTRLR BUCK PSI 24UQFN
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SDM2U20CSP-7 SDM2U20CSP-7 Diodes Incorporated SDM2U20CSP.pdf Description: DIODE SCHOTTKY 20V 2A X3WLB16082
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 115pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: X3-WLB1608-2
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 20 V
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DMC31D5UDJ-7B DMC31D5UDJ-7B Diodes Incorporated DMC31D5UDJ.pdf Description: MOSFET N/P-CH 30V 0.22A SOT963
Packaging: Tape & Reel (TR)
Package / Case: SOT-963
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 220mA, 200mA
Input Capacitance (Ciss) (Max) @ Vds: 22.6pF @ 15V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.38nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-963
Part Status: Active
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DMN53D0U-13 DMN53D0U-13 Diodes Incorporated DMN53D0U.pdf Description: MOSFET N-CH 50V 300MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Power Dissipation (Max): 520mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 37.1 pF @ 25 V
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AH49FDNTR-G1 AH49FDNTR-G1 Diodes Incorporated AH49F.pdf Description: SENSOR HALL ANALOG 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Output Type: Analog Voltage
Mounting Type: Surface Mount
Axis: Single
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 8V
Technology: Hall Effect
Sensing Range: ±80mT
Current - Supply (Max): 4mA
Supplier Device Package: U-DFN2020-6 (Type C)
Part Status: Active
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AH49FDNTR-G1 AH49FDNTR-G1 Diodes Incorporated AH49F.pdf Description: SENSOR HALL ANALOG 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Output Type: Analog Voltage
Mounting Type: Surface Mount
Axis: Single
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 8V
Technology: Hall Effect
Sensing Range: ±80mT
Current - Supply (Max): 4mA
Supplier Device Package: U-DFN2020-6 (Type C)
Part Status: Active
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AH1902-Z-7 AH1902-Z-7 Diodes Incorporated AH1902.pdf Description: MAGNETIC SWITCH OMNIPOLAR SOT553
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AH1902-Z-7 AH1902-Z-7 Diodes Incorporated AH1902.pdf Description: MAGNETIC SWITCH OMNIPOLAR SOT553
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DMN6013LFG-13 DMN6013LFG-13 Diodes Incorporated DMN6013LFG.pdf Description: MOSFET N-CH 60V 10.3A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 55.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2577 pF @ 30 V
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DMN7022LFG-13 DMN7022LFG-13 Diodes Incorporated DMN7022LFG.pdf Description: MOSFET N-CH 75V 7.8A PWRDI3333-8
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DMP3017SFK-13 DMP3017SFK-13 Diodes Incorporated DMP3017SFK.pdf Description: MOSFET P-CH 30V 10.4A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 9.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2523-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4414 pF @ 15 V
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DMT6008LFG-13 DMT6008LFG-13 Diodes Incorporated DMT6008LFG.pdf Description: MOSFET N-CH 60V 13A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2713 pF @ 30 V
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DMT8012LFG-13 DMT8012LFG-13 Diodes Incorporated DMT8012LFG.pdf Description: MOSFET N-CH 80V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 12A, 10V
Power Dissipation (Max): 2.2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1949 pF @ 40 V
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74AUP2G04DW-7 74AUP2G04DW-7 Diodes Incorporated 74AUP2G04.pdf Description: IC INVERTER 2CH 2-INP SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: SOT-363
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 5.4ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 2
Current - Quiescent (Max): 500 nA
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74AUP2G06DW-7 74AUP2G06DW-7 Diodes Incorporated 74AUP2G06.pdf Description: IC INVERTER GATE DUAL LP SOT363
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74AUP2G07DW-7 74AUP2G07DW-7 Diodes Incorporated 74AUP2G07.pdf Description: IC BUF NON-INVERT 3.6V SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: -, 4mA
Supplier Device Package: SOT-363
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74AUP2G14DW-7 74AUP2G14DW-7 Diodes Incorporated 74AUP2G14.pdf Description: IC INVERTER 2CH 2-INP SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: SOT-363
Input Logic Level - High: 0.6V ~ 2.29V
Input Logic Level - Low: 0.1V ~ 0.88V
Max Propagation Delay @ V, Max CL: 5.4ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 2
Current - Quiescent (Max): 500 nA
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AL8806QMP-13 AL8806QMP-13 Diodes Incorporated Description: IC LED DRVR RGLTR PWM 1.5A 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output / Channel: 1.5A (Switch)
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: 8-MSOP-EP
Dimming: Analog, PWM
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 30V
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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AL8807QMP-13 AL8807QMP-13 Diodes Incorporated Description: IC LED DRVR RGLTR PWM 1.3A 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output / Channel: 1.3A (Switch)
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: 8-MSOP-EP
Dimming: Analog, PWM
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 30V
Grade: Automotive
Part Status: Last Time Buy
Qualification: AEC-Q100
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DMC3016LSD-13 DMC3016LSD-13 Diodes Incorporated DMC3016LSD.pdf Description: MOSFET N/P-CH 30V 8.2A/6.2A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.2A, 6.2A
Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V
Rds On (Max) @ Id, Vgs: 16mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
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DMN10H099SK3-13 DMN10H099SK3-13 Diodes Incorporated DMN10H099SK3.pdf Description: MOSFET N-CH 100V 17A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.3A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1172 pF @ 50 V
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DMN6013LFG-7 DMN6013LFG-7 Diodes Incorporated DMN6013LFG.pdf Description: MOSFET N-CH 60V 10.3A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 55.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2577 pF @ 30 V
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PI7C9X762BZHE PI7C9X762.pdf
PI7C9X762BZHE
Hersteller: Diodes Incorporated
Description: IC BRIDGE CTRLR I2C/SPI 32-TQFN
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PI2EQX502TZHEX PI2EQX502T-Prod-Brief.pdf
PI2EQX502TZHEX
Hersteller: Diodes Incorporated
Description: IC REDRIVER USB 3.0 1CH 16TQFN
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PI3DBS3224ZNAEX PI3DBS3224.pdf
PI3DBS3224ZNAEX
Hersteller: Diodes Incorporated
Description: IC MUX/DEMUX HS 2:4 20-TQFN
Features: Bi-Directional, USB 2.0
Packaging: Tape & Reel (TR)
Package / Case: 20-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 19Ohm
-3db Bandwidth: 1.2GHz
Supplier Device Package: 20-TQFN (3x3)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 2
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PI4ULS3V302XVEX PI4ULS3V302.pdf
PI4ULS3V302XVEX
Hersteller: Diodes Incorporated
Description: IC TRANSLTR BIDIRECTIONAL 8UDFN
Features: Auto-Direction Sensing, Power-Off Protection
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN
Output Type: Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 140Mbps
Supplier Device Package: 8-UDFN (1.6x1.2)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 0.85 V ~ 2.7 V
Voltage - VCCB: 1.35 V ~ 3.6 V
Part Status: Active
Number of Circuits: 1
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PI2EQX502TZHEX PI2EQX502T-Prod-Brief.pdf
PI2EQX502TZHEX
Hersteller: Diodes Incorporated
Description: IC REDRIVER USB 3.0 1CH 16TQFN
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PI4ULS3V302XVEX PI4ULS3V302.pdf
PI4ULS3V302XVEX
Hersteller: Diodes Incorporated
Description: IC TRANSLTR BIDIRECTIONAL 8UDFN
Features: Auto-Direction Sensing, Power-Off Protection
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN
Output Type: Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 140Mbps
Supplier Device Package: 8-UDFN (1.6x1.2)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 0.85 V ~ 2.7 V
Voltage - VCCB: 1.35 V ~ 3.6 V
Part Status: Active
Number of Circuits: 1
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PI3USB102ZLEX PI3USB102.pdf
PI3USB102ZLEX
Hersteller: Diodes Incorporated
Description: IC SW USB 2.0 10-TQFN
Features: Bi-Directional, USB 2.0
Packaging: Cut Tape (CT)
Package / Case: 10-WFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 5Ohm
-3db Bandwidth: 810MHz
Supplier Device Package: 10-TQFN (1.3x1.6)
Voltage - Supply, Single (V+): 2.7V ~ 4.2V
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 1
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PI3USB102ZMEX PI3USB102.pdf
PI3USB102ZMEX
Hersteller: Diodes Incorporated
Description: IC USB SWITCH DUAL 2X1 10UQFN
Features: Bi-Directional, USB 2.0
Packaging: Cut Tape (CT)
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 5Ohm
-3db Bandwidth: 810MHz
Supplier Device Package: 10-UQFN (1.8x1.4)
Voltage - Supply, Single (V+): 2.7V ~ 4.2V
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 1
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PI3USB103ZLEX PI3USB103.pdf
PI3USB103ZLEX
Hersteller: Diodes Incorporated
Description: IC USB SWITCH HS 10TQFN
Features: Bi-Directional, USB 2.0
Packaging: Cut Tape (CT)
Package / Case: 10-WFQFN
Mounting Type: Surface Mount
Applications: USB
On-State Resistance (Max): 3Ohm (Typ)
Supplier Device Package: 10-TQFN (1.3x1.6)
Voltage - Supply, Single (V+): 2.7V ~ 4.4V
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 1
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PI3USB221XAEX PI3USB221.pdf
PI3USB221XAEX
Hersteller: Diodes Incorporated
Description: IC USB SWITCH 10TLLGA
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PI3USB223ZMEX PI3USB223.pdf
PI3USB223ZMEX
Hersteller: Diodes Incorporated
Description: IC USB SWITCH 10UQFN
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PI3USB223ZMEX PI3USB223.pdf
PI3USB223ZMEX
Hersteller: Diodes Incorporated
Description: IC USB SWITCH 10UQFN
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DMN3016LK3-13 DMN3016LK3.pdf
DMN3016LK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 12.4A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 15 V
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DMP6110SSS-13 DMP6110SSS.pdf
DMP6110SSS-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 30 V
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PAM8408DR PAM8408.pdf
PAM8408DR
Hersteller: Diodes Incorporated
Description: IC AMP CLASS D STEREO 2.4W 16SO
Features: Depop, Short-Circuit and Thermal Protection
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 6V
Max Output Power x Channels @ Load: 2.4W x 2 @ 4Ohm
Supplier Device Package: 16-SO
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLV271CS-13 TLV27x.pdf
TLV271CS-13
Hersteller: Diodes Incorporated
Description: IC CMOS 1 CIRCUIT 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: 0°C ~ 70°C
Current - Supply: 550µA
Slew Rate: 2V/µs
Gain Bandwidth Product: 2 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 500 µV
Supplier Device Package: 8-SO
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 8 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 16 V
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TLV272CM8-13 TLV27x.pdf
TLV272CM8-13
Hersteller: Diodes Incorporated
Description: IC CMOS 2 CIRCUIT 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: 0°C ~ 70°C
Current - Supply: 550µA (x2 Channels)
Slew Rate: 2V/µs
Gain Bandwidth Product: 1.9 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 500 µV
Supplier Device Package: 8-MSOP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 8 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 16 V
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TLV272CS-13 TLV27x.pdf
TLV272CS-13
Hersteller: Diodes Incorporated
Description: IC CMOS 2 CIRCUIT 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: 0°C ~ 70°C
Current - Supply: 550µA (x2 Channels)
Slew Rate: 2V/µs
Gain Bandwidth Product: 1.9 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 500 µV
Supplier Device Package: 8-SO
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 8 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 16 V
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2500+0.36 EUR
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TLV272IM8-13 TLV27x.pdf
TLV272IM8-13
Hersteller: Diodes Incorporated
Description: IC CMOS 2 CIRCUIT 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 550µA (x2 Channels)
Slew Rate: 2V/µs
Gain Bandwidth Product: 1.9 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 500 µV
Supplier Device Package: 8-MSOP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 8 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 16 V
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TLV272IS-13 TLV27x.pdf
TLV272IS-13
Hersteller: Diodes Incorporated
Description: IC CMOS 2 CIRCUIT 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 550µA (x2 Channels)
Slew Rate: 2V/µs
Gain Bandwidth Product: 1.9 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 500 µV
Supplier Device Package: 8-SO
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 8 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 16 V
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DMN53D0L-7 DMN53D0L.pdf
DMN53D0L-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 50V 500MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 370mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 25 V
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3000+0.10 EUR
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DMN53D0LDW-7 DMN53D0LDW.pdf
DMN53D0LDW-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 50V 0.36A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 310mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 360mA
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 25V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
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3000+0.10 EUR
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9000+0.09 EUR
15000+0.08 EUR
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DMN53D0U-7 DMN53D0U.pdf
DMN53D0U-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 50V 300MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Power Dissipation (Max): 520mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 37.1 pF @ 25 V
auf Bestellung 909000 Stücke:
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3000+0.09 EUR
6000+0.08 EUR
9000+0.07 EUR
30000+0.07 EUR
75000+0.06 EUR
150000+0.05 EUR
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DT2042-04TS-7 DT2042-04TS.pdf
DT2042-04TS-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 5.5VWM 10.5VC TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 85°C (TA)
Applications: HDMI
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: TSOT-26
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 105W
Power Line Protection: Yes
auf Bestellung 1560000 Stücke:
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3000+0.11 EUR
6000+0.10 EUR
9000+0.10 EUR
15000+0.09 EUR
21000+0.09 EUR
30000+0.08 EUR
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AP3598AFNTR-G1 AP3598A.pdf
AP3598AFNTR-G1
Hersteller: Diodes Incorporated
Description: IC REG CTRLR BUCK PSI 24UQFN
Produkt ist nicht verfügbar
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SDM2U20CSP-7 SDM2U20CSP.pdf
SDM2U20CSP-7
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 20V 2A X3WLB16082
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 115pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: X3-WLB1608-2
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 20 V
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DMN3016LK3-13 DMN3016LK3.pdf
DMN3016LK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 12.4A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 15 V
auf Bestellung 26163 Stücke:
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DMP6110SSS-13 DMP6110SSS.pdf
DMP6110SSS-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 30 V
auf Bestellung 19326 Stücke:
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16+1.16 EUR
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PAM8408DR PAM8408.pdf
PAM8408DR
Hersteller: Diodes Incorporated
Description: IC AMP CLASS D STEREO 2.4W 16SO
Packaging: Cut Tape (CT)
Features: Depop, Short-Circuit and Thermal Protection
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 6V
Max Output Power x Channels @ Load: 2.4W x 2 @ 4Ohm
Supplier Device Package: 16-SO
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLV271CS-13 TLV27x.pdf
TLV271CS-13
Hersteller: Diodes Incorporated
Description: IC CMOS 1 CIRCUIT 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: 0°C ~ 70°C
Current - Supply: 550µA
Slew Rate: 2V/µs
Gain Bandwidth Product: 2 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 500 µV
Supplier Device Package: 8-SO
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 8 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 16 V
auf Bestellung 30801 Stücke:
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12+1.53 EUR
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TLV272CM8-13 TLV27x.pdf
TLV272CM8-13
Hersteller: Diodes Incorporated
Description: IC CMOS 2 CIRCUIT 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: 0°C ~ 70°C
Current - Supply: 550µA (x2 Channels)
Slew Rate: 2V/µs
Gain Bandwidth Product: 1.9 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 500 µV
Supplier Device Package: 8-MSOP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 8 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 16 V
auf Bestellung 40792 Stücke:
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11+1.60 EUR
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TLV272CS-13 TLV27x.pdf
TLV272CS-13
Hersteller: Diodes Incorporated
Description: IC CMOS 2 CIRCUIT 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: 0°C ~ 70°C
Current - Supply: 550µA (x2 Channels)
Slew Rate: 2V/µs
Gain Bandwidth Product: 1.9 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 500 µV
Supplier Device Package: 8-SO
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 8 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 16 V
auf Bestellung 119477 Stücke:
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12+1.57 EUR
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TLV272IM8-13 TLV27x.pdf
TLV272IM8-13
Hersteller: Diodes Incorporated
Description: IC CMOS 2 CIRCUIT 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 550µA (x2 Channels)
Slew Rate: 2V/µs
Gain Bandwidth Product: 1.9 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 500 µV
Supplier Device Package: 8-MSOP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 8 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 16 V
auf Bestellung 6015 Stücke:
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10+1.78 EUR
17+1.08 EUR
25+0.90 EUR
100+0.69 EUR
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500+0.53 EUR
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TLV272IS-13 TLV27x.pdf
TLV272IS-13
Hersteller: Diodes Incorporated
Description: IC CMOS 2 CIRCUIT 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 550µA (x2 Channels)
Slew Rate: 2V/µs
Gain Bandwidth Product: 1.9 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 500 µV
Supplier Device Package: 8-SO
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 8 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 16 V
auf Bestellung 59449 Stücke:
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12+1.51 EUR
20+0.91 EUR
25+0.76 EUR
100+0.58 EUR
250+0.49 EUR
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DMN53D0L-7 DMN53D0L.pdf
DMN53D0L-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 50V 500MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 370mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 25 V
auf Bestellung 3587886 Stücke:
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30+0.60 EUR
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500+0.17 EUR
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DMN53D0LDW-7 DMN53D0LDW.pdf
DMN53D0LDW-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 50V 0.36A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 310mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 360mA
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 25V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 28380 Stücke:
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Anzahl Preis
35+0.51 EUR
59+0.30 EUR
100+0.19 EUR
500+0.14 EUR
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DMN53D0U-7 DMN53D0U.pdf
DMN53D0U-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 50V 300MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Power Dissipation (Max): 520mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 37.1 pF @ 25 V
auf Bestellung 915261 Stücke:
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34+0.53 EUR
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DT2042-04TS-7 DT2042-04TS.pdf
DT2042-04TS-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 5.5VWM 10.5VC TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 85°C (TA)
Applications: HDMI
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: TSOT-26
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 105W
Power Line Protection: Yes
auf Bestellung 1561935 Stücke:
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48+0.37 EUR
67+0.27 EUR
134+0.13 EUR
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AP3598AFNTR-G1 AP3598A.pdf
AP3598AFNTR-G1
Hersteller: Diodes Incorporated
Description: IC REG CTRLR BUCK PSI 24UQFN
Produkt ist nicht verfügbar
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SDM2U20CSP-7 SDM2U20CSP.pdf
SDM2U20CSP-7
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 20V 2A X3WLB16082
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 115pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: X3-WLB1608-2
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 20 V
auf Bestellung 8890 Stücke:
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DMC31D5UDJ-7B DMC31D5UDJ.pdf
DMC31D5UDJ-7B
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 0.22A SOT963
Packaging: Tape & Reel (TR)
Package / Case: SOT-963
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 220mA, 200mA
Input Capacitance (Ciss) (Max) @ Vds: 22.6pF @ 15V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.38nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-963
Part Status: Active
auf Bestellung 470000 Stücke:
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10000+0.19 EUR
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DMN53D0U-13 DMN53D0U.pdf
DMN53D0U-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 50V 300MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Power Dissipation (Max): 520mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 37.1 pF @ 25 V
auf Bestellung 140000 Stücke:
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10000+0.07 EUR
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AH49FDNTR-G1 AH49F.pdf
AH49FDNTR-G1
Hersteller: Diodes Incorporated
Description: SENSOR HALL ANALOG 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Output Type: Analog Voltage
Mounting Type: Surface Mount
Axis: Single
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 8V
Technology: Hall Effect
Sensing Range: ±80mT
Current - Supply (Max): 4mA
Supplier Device Package: U-DFN2020-6 (Type C)
Part Status: Active
auf Bestellung 21000 Stücke:
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Anzahl Preis
3000+0.31 EUR
6000+0.30 EUR
9000+0.29 EUR
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AH49FDNTR-G1 AH49F.pdf
AH49FDNTR-G1
Hersteller: Diodes Incorporated
Description: SENSOR HALL ANALOG 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Output Type: Analog Voltage
Mounting Type: Surface Mount
Axis: Single
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 8V
Technology: Hall Effect
Sensing Range: ±80mT
Current - Supply (Max): 4mA
Supplier Device Package: U-DFN2020-6 (Type C)
Part Status: Active
auf Bestellung 25987 Stücke:
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Anzahl Preis
28+0.65 EUR
31+0.57 EUR
33+0.54 EUR
36+0.50 EUR
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AH1902-Z-7 AH1902.pdf
AH1902-Z-7
Hersteller: Diodes Incorporated
Description: MAGNETIC SWITCH OMNIPOLAR SOT553
Produkt ist nicht verfügbar
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AH1902-Z-7 AH1902.pdf
AH1902-Z-7
Hersteller: Diodes Incorporated
Description: MAGNETIC SWITCH OMNIPOLAR SOT553
Produkt ist nicht verfügbar
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DMN6013LFG-13 DMN6013LFG.pdf
DMN6013LFG-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 10.3A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 55.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2577 pF @ 30 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.48 EUR
6000+0.45 EUR
Mindestbestellmenge: 3000
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DMN7022LFG-13 DMN7022LFG.pdf
DMN7022LFG-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 75V 7.8A PWRDI3333-8
Produkt ist nicht verfügbar
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DMP3017SFK-13 DMP3017SFK.pdf
DMP3017SFK-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 10.4A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 9.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2523-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4414 pF @ 15 V
Produkt ist nicht verfügbar
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DMT6008LFG-13 DMT6008LFG.pdf
DMT6008LFG-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 13A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2713 pF @ 30 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.58 EUR
6000+0.53 EUR
Mindestbestellmenge: 3000
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DMT8012LFG-13 DMT8012LFG.pdf
DMT8012LFG-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 80V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 12A, 10V
Power Dissipation (Max): 2.2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1949 pF @ 40 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.61 EUR
Mindestbestellmenge: 3000
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74AUP2G04DW-7 74AUP2G04.pdf
74AUP2G04DW-7
Hersteller: Diodes Incorporated
Description: IC INVERTER 2CH 2-INP SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: SOT-363
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 5.4ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 2
Current - Quiescent (Max): 500 nA
auf Bestellung 120000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.18 EUR
6000+0.16 EUR
9000+0.15 EUR
15000+0.14 EUR
30000+0.13 EUR
75000+0.12 EUR
Mindestbestellmenge: 3000
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74AUP2G06DW-7 74AUP2G06.pdf
74AUP2G06DW-7
Hersteller: Diodes Incorporated
Description: IC INVERTER GATE DUAL LP SOT363
Produkt ist nicht verfügbar
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74AUP2G07DW-7 74AUP2G07.pdf
74AUP2G07DW-7
Hersteller: Diodes Incorporated
Description: IC BUF NON-INVERT 3.6V SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: -, 4mA
Supplier Device Package: SOT-363
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.17 EUR
6000+0.16 EUR
15000+0.14 EUR
30000+0.13 EUR
Mindestbestellmenge: 3000
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74AUP2G14DW-7 74AUP2G14.pdf
74AUP2G14DW-7
Hersteller: Diodes Incorporated
Description: IC INVERTER 2CH 2-INP SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: SOT-363
Input Logic Level - High: 0.6V ~ 2.29V
Input Logic Level - Low: 0.1V ~ 0.88V
Max Propagation Delay @ V, Max CL: 5.4ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 2
Current - Quiescent (Max): 500 nA
Produkt ist nicht verfügbar
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AL8806QMP-13
AL8806QMP-13
Hersteller: Diodes Incorporated
Description: IC LED DRVR RGLTR PWM 1.5A 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output / Channel: 1.5A (Switch)
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: 8-MSOP-EP
Dimming: Analog, PWM
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 30V
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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AL8807QMP-13
AL8807QMP-13
Hersteller: Diodes Incorporated
Description: IC LED DRVR RGLTR PWM 1.3A 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output / Channel: 1.3A (Switch)
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: 8-MSOP-EP
Dimming: Analog, PWM
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 30V
Grade: Automotive
Part Status: Last Time Buy
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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DMC3016LSD-13 DMC3016LSD.pdf
DMC3016LSD-13
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 8.2A/6.2A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.2A, 6.2A
Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V
Rds On (Max) @ Id, Vgs: 16mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.29 EUR
5000+0.27 EUR
Mindestbestellmenge: 2500
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DMN10H099SK3-13 DMN10H099SK3.pdf
DMN10H099SK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 17A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.3A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1172 pF @ 50 V
auf Bestellung 70000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.37 EUR
5000+0.34 EUR
7500+0.33 EUR
Mindestbestellmenge: 2500
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DMN6013LFG-7 DMN6013LFG.pdf
DMN6013LFG-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 10.3A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 55.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2577 pF @ 30 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.49 EUR
4000+0.44 EUR
6000+0.43 EUR
10000+0.41 EUR
Mindestbestellmenge: 2000
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