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DMN32D2LDF-7 DMN32D2LDF-7 Diodes Incorporated ds31238.pdf Description: MOSFET 2N-CH 30V 0.4A SOT353
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 280mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 400mA
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 3V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-353
auf Bestellung 29315 Stücke:
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47+0.38 EUR
100+0.24 EUR
500+0.18 EUR
1000+0.16 EUR
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DMN5010VAK-7 DMN5010VAK-7 Diodes Incorporated ds30769.pdf Description: MOSFET 2N-CH 50V 0.28A SOT-563
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DMN63D0LT-7 DMN63D0LT-7 Diodes Incorporated Description: MOSFET N-CH 100V SOT523
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26+0.69 EUR
35+0.51 EUR
100+0.29 EUR
500+0.19 EUR
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DMN66D0LW-7 DMN66D0LW-7 Diodes Incorporated ds31483.pdf Description: MOSFET N-CH 60V 115MA SOT323
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DMP1045UFY4-7 DMP1045UFY4-7 Diodes Incorporated DMP1045UFY4.pdf Description: MOSFET P-CH 12V 5.5A DFN2015H4-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DFN2015H4-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 23.7 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 10 V
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DMP2047UCB4-7 DMP2047UCB4-7 Diodes Incorporated DMP2047UCB4.pdf Description: MOSFET P-CH 20V 4.1A U-WLB1010-4
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 47mOhm @ 1A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: U-WLB1010-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 218 pF @ 10 V
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DMP210DUDJ-7 DMP210DUDJ-7 Diodes Incorporated ds31494.pdf Description: MOSFET 2P-CH 20V 0.2A SOT-963
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DMP58D0LFB-7 DMP58D0LFB-7 Diodes Incorporated Description: MOSFET P-CH 50V 180MA 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V
Power Dissipation (Max): 470mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: X1-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 27 pF @ 25 V
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DN0150BLP4-7 DN0150BLP4-7 Diodes Incorporated ds31492.pdf Description: TRANS NPN 50V 0.1A X1-DFN1006-3
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DP0150BLP4-7 DP0150BLP4-7 Diodes Incorporated DP0150BLP4.pdf Description: TRANS PNP 50V 0.1A X2-DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: X2-DFN1006-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 450 mW
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DSS5320T-7 DSS5320T-7 Diodes Incorporated DSS5320T.pdf Description: TRANS PNP 20V 2A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Frequency - Transition: 180MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 600 mW
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52+0.34 EUR
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DSS8110Y-7 DSS8110Y-7 Diodes Incorporated DSS8110Y.pdf Description: TRANS NPN 100V 1A SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 10V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-363
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 625 mW
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DSS9110Y-7 DSS9110Y-7 Diodes Incorporated DSS9110Y.pdf Description: TRANS PNP 100V 1A SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 320mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-363
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 625 mW
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IMT17-7 IMT17-7 Diodes Incorporated ds31202.pdf Description: TRANS 2PNP 50V 0.5A SOT26
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MMBZ5227BT-7-F MMBZ5227BT-7-F Diodes Incorporated ds30267.pdf Description: DIODE ZENER 3.6V 150MW SOT523
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: SOT-523
Power - Max: 150 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 15 µA @ 1 V
auf Bestellung 47998 Stücke:
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MMBZ5241BT-7-F MMBZ5241BT-7-F Diodes Incorporated ds30267.pdf Description: DIODE ZENER 11V 150MW SOT523
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: SOT-523
Power - Max: 150 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 8.4 V
auf Bestellung 71960 Stücke:
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MMBZ5245BTS-7-F MMBZ5245BTS-7-F Diodes Incorporated MMBZ5221-5259BTS.pdf Description: DIODE ZENER ARRAY 15V SOT-363
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 3 Independent
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: SOT-363
Grade: Automotive
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Qualification: AEC-Q101
auf Bestellung 27000 Stücke:
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MMBZ5248BT-7-F MMBZ5248BT-7-F Diodes Incorporated ds30267.pdf Description: DIODE ZENER 18V 150MW SOT523
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 21 Ohms
Supplier Device Package: SOT-523
Power - Max: 150 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
auf Bestellung 105000 Stücke:
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MMDTA42-7-F MMDTA42-7-F Diodes Incorporated Description: TRANS 2NPN 300V 500MA SOT-26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-26
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40+0.45 EUR
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QZX363C5V6-7-F QZX363C5V6-7-F Diodes Incorporated ds30143.pdf Description: DIODE ZENER ARRAY 5.6V SOT363
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 Pair Common Anode
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOT-363
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
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SBR140LP-7 SBR140LP-7 Diodes Incorporated SBR140LP.pdf Description: DIODE SBR 40V 1A 3DFN
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SDM03MT40A-7-F SDM03MT40A-7-F Diodes Incorporated Description: DIODE ARR SCHOTT 40V 30MA SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 30mA (DC)
Supplier Device Package: SOT-26
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
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SDM1L30CSP-7 SDM1L30CSP-7 Diodes Incorporated SDM1L30CSP.pdf Description: DIODE SCHOTT 30V 1A X2-WLB2010-2
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 150pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: X2-WLB2010-2
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 400 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
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SDM40E20LA-7 SDM40E20LA-7 Diodes Incorporated SDM40E20L_S_C_A.pdf Description: DIODE ARR SCHOTT 20V 400MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 400mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 310 mV @ 100 mA
Current - Reverse Leakage @ Vr: 250 µA @ 20 V
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UDZ5V1BF-7 UDZ5V1BF-7 Diodes Incorporated ds32228.pdf Description: DIODE ZENER 5.1V 500MW SOD323F
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-323F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V
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UMC5N-7 UMC5N-7 Diodes Incorporated ds31205.pdf Description: TRANS NPN/PNP PREBIAS SOT353
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V / 30 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms, 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms, 10kOhms
Supplier Device Package: SOT-353
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500+0.31 EUR
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BZX84B27-7-F BZX84B27-7-F Diodes Incorporated BZX84Bxx(x).pdf Description: DIODE ZENER 27V 300MW SOT23
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DDZ22DS-7 Diodes Incorporated ds30414.pdf Description: DIODE ZENER 22V 200MW SOD323
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DDZ30DS-7 Diodes Incorporated ds30414.pdf Description: DIODE ZENER 30V 200MW SOD323
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DDZ36S-7 Diodes Incorporated ds30414.pdf Description: DIODE ZENER 36V 200MW SOD323
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DDZ9696S-7 Diodes Incorporated ds30409.pdf Description: DIODE ZENER 9.1V 200MW SOD323
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DDZ9707T-7 DDZ9707T-7 Diodes Incorporated ds30553.pdf Description: DIODE ZENER 20V 150MW SOD523
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DDZ9708T-7 DDZ9708T-7 Diodes Incorporated ds30553.pdf Description: DIODE ZENER 22V 150MW SOD523
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DDZ9712-7 DDZ9712-7 Diodes Incorporated ds30407.pdf Description: DIODE ZENER 28V 500MW SOD123
auf Bestellung 300078000 Stücke:
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DDZ9716T-7 DDZ9716T-7 Diodes Incorporated ds30553.pdf Description: DIODE ZENER 39V 150MW SOD523
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DDZX43-7 DDZX43-7 Diodes Incorporated ds30408.pdf Description: DIODE ZENER 43V 300MW SOT23-3
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DDZX8V2C-7 DDZX8V2C-7 Diodes Incorporated ds30408.pdf Description: DIODE ZENER 8.2V 300MW SOT23-3
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74HC164D14 74HC164D14 Diodes Incorporated 74HC164.pdf Description: IC SR PUSH-PULL 8BIT 14-PDIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Output Type: Push-Pull
Mounting Type: Through Hole
Number of Elements: 1
Function: Serial to Parallel
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 14-PDIP
Part Status: Active
Number of Bits per Element: 8
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DMN10H099SFG-7 DMN10H099SFG-7 Diodes Incorporated DMN10H099SFG.pdf Description: MOSFET N-CH 100V 4.2A PWRDI3333
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1172 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 25.2 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 980mW (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
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2N7002DWQ-7-F 2N7002DWQ-7-F Diodes Incorporated 2N7002DW.pdf Description: MOSFET 2N-CH 60V 0.23A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 310mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 230mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
Produkt ist nicht verfügbar
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AL5801W6Q-7 AL5801W6Q-7 Diodes Incorporated AL5801.pdf Description: IC LED DRVR LIN PWM 350MA SOT26
Mounting Type: Surface Mount
Voltage - Output: 1.1V ~ 100V
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Dimming: PWM
Supplier Device Package: SOT-26
Internal Switch(s): Yes
Current - Output / Channel: 350mA
Applications: Signage
Operating Temperature: -40°C ~ 125°C (TA)
Type: Linear
Number of Outputs: 1
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Voltage - Supply (Max): 20V
Voltage - Supply (Min): 3.5V
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DMC1028UFDB-7 DMC1028UFDB-7 Diodes Incorporated DMC1028UFDB.pdf Description: MOSFET N/P-CH 12V/20V 6A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.36W
Drain to Source Voltage (Vdss): 12V, 20V
Current - Continuous Drain (Id) @ 25°C: 6A, 3.4A
Input Capacitance (Ciss) (Max) @ Vds: 787pF @ 6V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Produkt ist nicht verfügbar
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DMC1029UFDB-7 DMC1029UFDB-7 Diodes Incorporated DMC1029UFDB.pdf Description: MOSFET N/P-CH 12V 5.6A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.6A, 3.8A
Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
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DMC2041UFDB-7 DMC2041UFDB-7 Diodes Incorporated DMC2041UFDB.pdf Description: MOSFET N/P-CH 20V 4.7A 6UDFN
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 713pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.2A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.4W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: U-DFN2020-6 (Type B)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
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DMC3400SDW-7 DMC3400SDW-7 Diodes Incorporated DMC3400SDW.pdf Description: MOSFET N/P-CH 30V 0.65A SOT363
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 650mA, 450mA
Drain to Source Voltage (Vdss): 30V
Power - Max: 310mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
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DMG3404L-7 DMG3404L-7 Diodes Incorporated DMG3404L.pdf Description: MOSFET N-CH 30V 4.2A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.8A, 10V
Power Dissipation (Max): 780mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 641 pF @ 15 V
Produkt ist nicht verfügbar
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DMG3406L-7 DMG3406L-7 Diodes Incorporated DMG3406L.pdf Description: MOSFET N-CH 30V 3.6A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.6A, 10V
Power Dissipation (Max): 770mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 495 pF @ 15 V
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DMN1029UFDB-7 DMN1029UFDB-7 Diodes Incorporated DMN1029UFDB.pdf Description: MOSFET 2N-CH 12V 5.6A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.6A
Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
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DMN10H170SVT-7 DMN10H170SVT-7 Diodes Incorporated DMN10H170SVT.pdf Description: MOSFET N-CH 100V 2.6A TSOT26
Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TSOT-26
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
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DMN2041UFDB-7 DMN2041UFDB-7 Diodes Incorporated DMN2041UFDB.pdf Description: MOSFET 2N-CH 20V 4.7A 6UDFN
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DMN2046U-7 DMN2046U-7 Diodes Incorporated DMN2046U.pdf Description: MOSFET N-CH 20V 3.4A SOT23
Input Capacitance (Ciss) (Max) @ Vds: 292 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 760mW (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 3.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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30000+0.067 EUR
75000+0.066 EUR
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DMN3042L-7 DMN3042L-7 Diodes Incorporated DMN3042L.pdf Description: MOSFET N-CH 30V 5.8A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 5.8A, 10V
Power Dissipation (Max): 720mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 15 V
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DMN32D4SDW-7 DMN32D4SDW-7 Diodes Incorporated DMN32D4SDW.pdf Description: MOSFET 2N-CH 30V 0.65A SOT363
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 250mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 650mA
Drain to Source Voltage (Vdss): 30V
Power - Max: 290mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
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DMP1046UFDB-7 DMP1046UFDB-7 Diodes Incorporated DMP1046UFDB.pdf Description: MOSFET 2P-CH 12V 3.8A 6UDFN
Part Status: Active
Supplier Device Package: U-DFN2020-6 (Type B)
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17.9nC @ 8V
Rds On (Max) @ Id, Vgs: 61mOhm @ 3.6A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 915pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Drain to Source Voltage (Vdss): 12V
Power - Max: 1.4W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
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DMP2060UFDB-7 DMP2060UFDB-7 Diodes Incorporated DMP2060UFDB.pdf Description: MOSFET 2P-CH 20V 3.2A 6UDFN
Supplier Device Package: U-DFN2020-6 (Type B)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.9A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 881pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.4W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DMP2200UDW-7 DMP2200UDW-7 Diodes Incorporated DMP2200UDW.pdf Description: MOSFET 2P-CH 20V 0.9A SOT363
Drain to Source Voltage (Vdss): 20V
Power - Max: 450mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 260mOhm @ 880mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 184pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 900mA
Produkt ist nicht verfügbar
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DMP3068L-7 DMP3068L-7 Diodes Incorporated DMP3068L.pdf Description: MOSFET P-CH 30V 3.3A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 4.2A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 708 pF @ 15 V
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DMP4065S-7 DMP4065S-7 Diodes Incorporated DMP4065S.pdf Description: MOSFET P-CH 40V 2.4A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4.2A, 10V
Power Dissipation (Max): 720mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 587 pF @ 20 V
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DSS4160TQ-7 DSS4160TQ-7 Diodes Incorporated DSS4160T.pdf Description: TRANS NPN 60V 1A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 280mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 725 mW
Grade: Automotive
Qualification: AEC-Q101
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FMMT720QTA FMMT720QTA Diodes Incorporated FMMT720.pdf Description: TRANS PNP 40V 1.5A SOT23-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1.5 A
Part Status: Active
Supplier Device Package: SOT-23-3
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 330mV @ 100mA, 1.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 84000 Stücke:
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3000+0.29 EUR
6000+0.27 EUR
9000+0.26 EUR
15000+0.25 EUR
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DMN32D2LDF-7 ds31238.pdf
DMN32D2LDF-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 0.4A SOT353
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 280mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 400mA
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 3V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-353
auf Bestellung 29315 Stücke:
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29+0.62 EUR
47+0.38 EUR
100+0.24 EUR
500+0.18 EUR
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DMN5010VAK-7 ds30769.pdf
DMN5010VAK-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 50V 0.28A SOT-563
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DMN63D0LT-7
DMN63D0LT-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V SOT523
auf Bestellung 3000 Stücke:
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26+0.69 EUR
35+0.51 EUR
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DMN66D0LW-7 ds31483.pdf
DMN66D0LW-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 115MA SOT323
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23+0.77 EUR
27+0.65 EUR
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DMP1045UFY4-7 DMP1045UFY4.pdf
DMP1045UFY4-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 12V 5.5A DFN2015H4-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DFN2015H4-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 23.7 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 10 V
auf Bestellung 3862 Stücke:
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31+0.57 EUR
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DMP2047UCB4-7 DMP2047UCB4.pdf
DMP2047UCB4-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 4.1A U-WLB1010-4
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 47mOhm @ 1A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: U-WLB1010-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 218 pF @ 10 V
auf Bestellung 8710 Stücke:
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12+1.51 EUR
19+0.95 EUR
100+0.62 EUR
500+0.48 EUR
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DMP210DUDJ-7 ds31494.pdf
DMP210DUDJ-7
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 20V 0.2A SOT-963
Produkt ist nicht verfügbar
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DMP58D0LFB-7
DMP58D0LFB-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 50V 180MA 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V
Power Dissipation (Max): 470mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: X1-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 27 pF @ 25 V
auf Bestellung 5723 Stücke:
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28+0.63 EUR
46+0.39 EUR
100+0.25 EUR
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DN0150BLP4-7 ds31492.pdf
DN0150BLP4-7
Hersteller: Diodes Incorporated
Description: TRANS NPN 50V 0.1A X1-DFN1006-3
Produkt ist nicht verfügbar
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DP0150BLP4-7 DP0150BLP4.pdf
DP0150BLP4-7
Hersteller: Diodes Incorporated
Description: TRANS PNP 50V 0.1A X2-DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: X2-DFN1006-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 450 mW
auf Bestellung 2254830 Stücke:
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Anzahl Preis
17+1.06 EUR
27+0.66 EUR
100+0.42 EUR
500+0.32 EUR
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DSS5320T-7 DSS5320T.pdf
DSS5320T-7
Hersteller: Diodes Incorporated
Description: TRANS PNP 20V 2A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Frequency - Transition: 180MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 600 mW
auf Bestellung 29689 Stücke:
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Anzahl Preis
32+0.56 EUR
52+0.34 EUR
100+0.21 EUR
500+0.16 EUR
1000+0.14 EUR
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DSS8110Y-7 DSS8110Y.pdf
DSS8110Y-7
Hersteller: Diodes Incorporated
Description: TRANS NPN 100V 1A SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 10V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-363
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 625 mW
auf Bestellung 48669 Stücke:
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32+0.56 EUR
50+0.35 EUR
100+0.22 EUR
500+0.16 EUR
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DSS9110Y-7 DSS9110Y.pdf
DSS9110Y-7
Hersteller: Diodes Incorporated
Description: TRANS PNP 100V 1A SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 320mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-363
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
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IMT17-7 ds31202.pdf
IMT17-7
Hersteller: Diodes Incorporated
Description: TRANS 2PNP 50V 0.5A SOT26
Produkt ist nicht verfügbar
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MMBZ5227BT-7-F ds30267.pdf
MMBZ5227BT-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 3.6V 150MW SOT523
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: SOT-523
Power - Max: 150 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 15 µA @ 1 V
auf Bestellung 47998 Stücke:
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Anzahl Preis
28+0.65 EUR
38+0.46 EUR
100+0.23 EUR
500+0.21 EUR
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MMBZ5241BT-7-F ds30267.pdf
MMBZ5241BT-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 11V 150MW SOT523
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: SOT-523
Power - Max: 150 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 8.4 V
auf Bestellung 71960 Stücke:
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Anzahl Preis
48+0.37 EUR
72+0.24 EUR
146+0.12 EUR
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MMBZ5245BTS-7-F MMBZ5221-5259BTS.pdf
MMBZ5245BTS-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER ARRAY 15V SOT-363
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 3 Independent
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: SOT-363
Grade: Automotive
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Qualification: AEC-Q101
auf Bestellung 27000 Stücke:
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Anzahl Preis
20+0.88 EUR
33+0.54 EUR
100+0.35 EUR
500+0.26 EUR
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MMBZ5248BT-7-F ds30267.pdf
MMBZ5248BT-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 18V 150MW SOT523
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 21 Ohms
Supplier Device Package: SOT-523
Power - Max: 150 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
auf Bestellung 105000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
50+0.35 EUR
100+0.22 EUR
500+0.16 EUR
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MMDTA42-7-F
MMDTA42-7-F
Hersteller: Diodes Incorporated
Description: TRANS 2NPN 300V 500MA SOT-26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-26
auf Bestellung 116329 Stücke:
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Anzahl Preis
24+0.74 EUR
40+0.45 EUR
100+0.28 EUR
500+0.21 EUR
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QZX363C5V6-7-F ds30143.pdf
QZX363C5V6-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER ARRAY 5.6V SOT363
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 Pair Common Anode
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOT-363
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
auf Bestellung 95975 Stücke:
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27+0.67 EUR
32+0.56 EUR
100+0.39 EUR
500+0.3 EUR
1000+0.25 EUR
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SBR140LP-7 SBR140LP.pdf
SBR140LP-7
Hersteller: Diodes Incorporated
Description: DIODE SBR 40V 1A 3DFN
auf Bestellung 28832 Stücke:
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SDM03MT40A-7-F
SDM03MT40A-7-F
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOTT 40V 30MA SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 30mA (DC)
Supplier Device Package: SOT-26
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
auf Bestellung 8538 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+0.86 EUR
31+0.58 EUR
100+0.4 EUR
500+0.31 EUR
1000+0.28 EUR
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SDM1L30CSP-7 SDM1L30CSP.pdf
SDM1L30CSP-7
Hersteller: Diodes Incorporated
Description: DIODE SCHOTT 30V 1A X2-WLB2010-2
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 150pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: X2-WLB2010-2
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 400 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
auf Bestellung 132007 Stücke:
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Anzahl Preis
18+0.99 EUR
21+0.84 EUR
100+0.58 EUR
500+0.46 EUR
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SDM40E20LA-7 SDM40E20L_S_C_A.pdf
SDM40E20LA-7
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOTT 20V 400MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 400mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 310 mV @ 100 mA
Current - Reverse Leakage @ Vr: 250 µA @ 20 V
auf Bestellung 45059 Stücke:
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Anzahl Preis
17+1.04 EUR
27+0.65 EUR
100+0.53 EUR
500+0.41 EUR
1000+0.37 EUR
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UDZ5V1BF-7 ds32228.pdf
UDZ5V1BF-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 5.1V 500MW SOD323F
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-323F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V
auf Bestellung 175844 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
47+0.37 EUR
100+0.19 EUR
500+0.15 EUR
1000+0.11 EUR
Mindestbestellmenge: 34
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UMC5N-7 ds31205.pdf
UMC5N-7
Hersteller: Diodes Incorporated
Description: TRANS NPN/PNP PREBIAS SOT353
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V / 30 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms, 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms, 10kOhms
Supplier Device Package: SOT-353
auf Bestellung 96000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
27+0.67 EUR
31+0.57 EUR
100+0.4 EUR
500+0.31 EUR
1000+0.25 EUR
Mindestbestellmenge: 27
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BZX84B27-7-F BZX84Bxx(x).pdf
BZX84B27-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 27V 300MW SOT23
Produkt ist nicht verfügbar
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DDZ22DS-7 ds30414.pdf
Hersteller: Diodes Incorporated
Description: DIODE ZENER 22V 200MW SOD323
auf Bestellung 300060000 Stücke:
Lieferzeit 10-14 Tag (e)
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DDZ30DS-7 ds30414.pdf
Hersteller: Diodes Incorporated
Description: DIODE ZENER 30V 200MW SOD323
Produkt ist nicht verfügbar
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DDZ36S-7 ds30414.pdf
Hersteller: Diodes Incorporated
Description: DIODE ZENER 36V 200MW SOD323
auf Bestellung 600039000 Stücke:
Lieferzeit 10-14 Tag (e)
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DDZ9696S-7 ds30409.pdf
Hersteller: Diodes Incorporated
Description: DIODE ZENER 9.1V 200MW SOD323
auf Bestellung 2950 Stücke:
Lieferzeit 10-14 Tag (e)
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DDZ9707T-7 ds30553.pdf
DDZ9707T-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 20V 150MW SOD523
Produkt ist nicht verfügbar
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DDZ9708T-7 ds30553.pdf
DDZ9708T-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 22V 150MW SOD523
Produkt ist nicht verfügbar
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DDZ9712-7 ds30407.pdf
DDZ9712-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 28V 500MW SOD123
auf Bestellung 300078000 Stücke:
Lieferzeit 10-14 Tag (e)
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DDZ9716T-7 ds30553.pdf
DDZ9716T-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 39V 150MW SOD523
Produkt ist nicht verfügbar
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DDZX43-7 ds30408.pdf
DDZX43-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 43V 300MW SOT23-3
Produkt ist nicht verfügbar
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DDZX8V2C-7 ds30408.pdf
DDZX8V2C-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 8.2V 300MW SOT23-3
auf Bestellung 42739000 Stücke:
Lieferzeit 10-14 Tag (e)
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74HC164D14 74HC164.pdf
74HC164D14
Hersteller: Diodes Incorporated
Description: IC SR PUSH-PULL 8BIT 14-PDIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Output Type: Push-Pull
Mounting Type: Through Hole
Number of Elements: 1
Function: Serial to Parallel
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 14-PDIP
Part Status: Active
Number of Bits per Element: 8
auf Bestellung 32895 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.32 EUR
19+0.95 EUR
25+0.85 EUR
100+0.75 EUR
250+0.7 EUR
500+0.67 EUR
1000+0.65 EUR
3000+0.62 EUR
5000+0.6 EUR
Mindestbestellmenge: 14
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DMN10H099SFG-7 DMN10H099SFG.pdf
DMN10H099SFG-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 4.2A PWRDI3333
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1172 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 25.2 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 980mW (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.44 EUR
Mindestbestellmenge: 2000
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2N7002DWQ-7-F 2N7002DW.pdf
2N7002DWQ-7-F
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.23A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 310mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 230mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
Produkt ist nicht verfügbar
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AL5801W6Q-7 AL5801.pdf
AL5801W6Q-7
Hersteller: Diodes Incorporated
Description: IC LED DRVR LIN PWM 350MA SOT26
Mounting Type: Surface Mount
Voltage - Output: 1.1V ~ 100V
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Dimming: PWM
Supplier Device Package: SOT-26
Internal Switch(s): Yes
Current - Output / Channel: 350mA
Applications: Signage
Operating Temperature: -40°C ~ 125°C (TA)
Type: Linear
Number of Outputs: 1
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Voltage - Supply (Max): 20V
Voltage - Supply (Min): 3.5V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.37 EUR
6000+0.35 EUR
15000+0.33 EUR
Mindestbestellmenge: 3000
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DMC1028UFDB-7 DMC1028UFDB.pdf
DMC1028UFDB-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 12V/20V 6A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.36W
Drain to Source Voltage (Vdss): 12V, 20V
Current - Continuous Drain (Id) @ 25°C: 6A, 3.4A
Input Capacitance (Ciss) (Max) @ Vds: 787pF @ 6V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Produkt ist nicht verfügbar
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DMC1029UFDB-7 DMC1029UFDB.pdf
DMC1029UFDB-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 12V 5.6A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.6A, 3.8A
Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
auf Bestellung 117000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.45 EUR
6000+0.41 EUR
9000+0.4 EUR
15000+0.39 EUR
Mindestbestellmenge: 3000
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DMC2041UFDB-7 DMC2041UFDB.pdf
DMC2041UFDB-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 20V 4.7A 6UDFN
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 713pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.2A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.4W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: U-DFN2020-6 (Type B)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.47 EUR
Mindestbestellmenge: 3000
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DMC3400SDW-7 DMC3400SDW.pdf
DMC3400SDW-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 0.65A SOT363
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 650mA, 450mA
Drain to Source Voltage (Vdss): 30V
Power - Max: 310mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
auf Bestellung 153000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.098 EUR
6000+0.088 EUR
9000+0.083 EUR
15000+0.078 EUR
21000+0.075 EUR
30000+0.072 EUR
Mindestbestellmenge: 3000
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DMG3404L-7 DMG3404L.pdf
DMG3404L-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 4.2A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.8A, 10V
Power Dissipation (Max): 780mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 641 pF @ 15 V
Produkt ist nicht verfügbar
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DMG3406L-7 DMG3406L.pdf
DMG3406L-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 3.6A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.6A, 10V
Power Dissipation (Max): 770mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 495 pF @ 15 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.12 EUR
6000+0.11 EUR
15000+0.099 EUR
21000+0.095 EUR
30000+0.091 EUR
Mindestbestellmenge: 3000
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DMN1029UFDB-7 DMN1029UFDB.pdf
DMN1029UFDB-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 12V 5.6A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.6A
Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
auf Bestellung 69000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.22 EUR
6000+0.2 EUR
9000+0.19 EUR
15000+0.18 EUR
21000+0.17 EUR
Mindestbestellmenge: 3000
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DMN10H170SVT-7 DMN10H170SVT.pdf
DMN10H170SVT-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 2.6A TSOT26
Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TSOT-26
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
auf Bestellung 873000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.25 EUR
6000+0.24 EUR
15000+0.23 EUR
Mindestbestellmenge: 3000
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DMN2041UFDB-7 DMN2041UFDB.pdf
DMN2041UFDB-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 4.7A 6UDFN
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
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DMN2046U-7 DMN2046U.pdf
DMN2046U-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 3.4A SOT23
Input Capacitance (Ciss) (Max) @ Vds: 292 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 760mW (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 3.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 195000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.091 EUR
6000+0.082 EUR
9000+0.078 EUR
15000+0.073 EUR
21000+0.07 EUR
30000+0.067 EUR
75000+0.066 EUR
Mindestbestellmenge: 3000
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DMN3042L-7 DMN3042L.pdf
DMN3042L-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 5.8A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 5.8A, 10V
Power Dissipation (Max): 720mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 15 V
auf Bestellung 81000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.14 EUR
6000+0.13 EUR
9000+0.12 EUR
21000+0.11 EUR
75000+0.099 EUR
Mindestbestellmenge: 3000
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DMN32D4SDW-7 DMN32D4SDW.pdf
DMN32D4SDW-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 0.65A SOT363
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 250mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 650mA
Drain to Source Voltage (Vdss): 30V
Power - Max: 290mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
auf Bestellung 152468 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.14 EUR
6000+0.13 EUR
9000+0.11 EUR
75000+0.091 EUR
150000+0.089 EUR
Mindestbestellmenge: 3000
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DMP1046UFDB-7 DMP1046UFDB.pdf
DMP1046UFDB-7
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 12V 3.8A 6UDFN
Part Status: Active
Supplier Device Package: U-DFN2020-6 (Type B)
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17.9nC @ 8V
Rds On (Max) @ Id, Vgs: 61mOhm @ 3.6A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 915pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Drain to Source Voltage (Vdss): 12V
Power - Max: 1.4W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.21 EUR
6000+0.19 EUR
9000+0.18 EUR
Mindestbestellmenge: 3000
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DMP2060UFDB-7 DMP2060UFDB.pdf
DMP2060UFDB-7
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 20V 3.2A 6UDFN
Supplier Device Package: U-DFN2020-6 (Type B)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.9A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 881pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.4W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DMP2200UDW-7 DMP2200UDW.pdf
DMP2200UDW-7
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 20V 0.9A SOT363
Drain to Source Voltage (Vdss): 20V
Power - Max: 450mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 260mOhm @ 880mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 184pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 900mA
Produkt ist nicht verfügbar
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DMP3068L-7 DMP3068L.pdf
DMP3068L-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 3.3A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 4.2A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 708 pF @ 15 V
auf Bestellung 4380 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.12 EUR
Mindestbestellmenge: 3000
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DMP4065S-7 DMP4065S.pdf
DMP4065S-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 40V 2.4A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4.2A, 10V
Power Dissipation (Max): 720mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 587 pF @ 20 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.15 EUR
6000+0.13 EUR
15000+0.12 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
DSS4160TQ-7 DSS4160T.pdf
DSS4160TQ-7
Hersteller: Diodes Incorporated
Description: TRANS NPN 60V 1A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 280mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 725 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2950 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
FMMT720QTA FMMT720.pdf
FMMT720QTA
Hersteller: Diodes Incorporated
Description: TRANS PNP 40V 1.5A SOT23-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1.5 A
Part Status: Active
Supplier Device Package: SOT-23-3
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 330mV @ 100mA, 1.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 84000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.29 EUR
6000+0.27 EUR
9000+0.26 EUR
15000+0.25 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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