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DMN10H170SFDE-13 DMN10H170SFDE-13 Diodes Incorporated DMN10H170SFDE.pdf Description: MOSFET N-CH 100V 2.9A 6UDFN
Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: U-DFN2020-6 (Type E)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 660mW (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Tape & Reel (TR)
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DMN10H170SVT-13 DMN10H170SVT-13 Diodes Incorporated DMN10H170SVT.pdf Description: MOSFET N-CH 100V 2.6A TSOT26
Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TSOT-26
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
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DMN2041UFDB-13 DMN2041UFDB-13 Diodes Incorporated DMN2041UFDB.pdf Description: MOSFET 2N-CH 20V 4.7A 6UDFN
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DMN2046U-13 DMN2046U-13 Diodes Incorporated DMN2046U.pdf Description: MOSFET N-CH 20V 3.4A SOT23
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DMN32D4SDW-13 DMN32D4SDW-13 Diodes Incorporated DMN32D4SDW.pdf Description: MOSFET 2N-CH 30V 0.65A SOT363
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 250mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 650mA
Drain to Source Voltage (Vdss): 30V
Power - Max: 290mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
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DMP2060UFDB-13 DMP2060UFDB-13 Diodes Incorporated DMP2060UFDB.pdf Description: MOSFET 2P-CH 20V 3.2A 6UDFN
Supplier Device Package: U-DFN2020-6 (Type B)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.9A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 881pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.4W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
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DMP2200UDW-13 DMP2200UDW-13 Diodes Incorporated DMP2200UDW.pdf Description: MOSFET 2P-CH 20V 0.9A SOT363
Current - Continuous Drain (Id) @ 25°C: 900mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 450mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 260mOhm @ 880mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 184pF @ 10V
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DMN3016LSS-13 DMN3016LSS-13 Diodes Incorporated DMN3016LSS.pdf Description: MOSFET N-CH 30V 10.3A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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AP3785HMTR-G1 AP3785HMTR-G1 Diodes Incorporated Description: IC OFFLINE SWITCH FLYBACK 8SO
Power (Watts): 15 W
Voltage - Start Up: 13 V
Fault Protection: Over Temperature, Over Voltage, Short Circuit
Supplier Device Package: 8-SO
Voltage - Supply (Vcc/Vdd): 5.9V ~ 30V
Topology: Flyback
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: 80kHz
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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B2100AF-13 B2100AF-13 Diodes Incorporated B2100AF.pdf Description: DIODE SCHOTTKY 100V 2A SMAF
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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B360AM-13-F B360AM-13-F Diodes Incorporated B360AM.pdf Description: DIODE SCHOTTKY 60V 3A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
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DDZ15Q-7 DDZ15Q-7 Diodes Incorporated DDZ5V1B-DDZ43.pdf Description: DIODE ZENER 15V 310MW SOD123
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DDZ16Q-7 DDZ16Q-7 Diodes Incorporated DDZ5V1B-DDZ43.pdf Description: DIODE ZENER 16V 310MW SOD123
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DDZ17Q-7 DDZ17Q-7 Diodes Incorporated ds30407.pdf Description: DIODE ZENER 17V 310MW SOD123
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FMMT493QTA FMMT493QTA Diodes Incorporated FMMT493.pdf Description: TRANS NPN 100V 1A SOT-23-3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: SOT-23-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 10V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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FMMT593QTA FMMT593QTA Diodes Incorporated FMMT593.pdf Description: TRANS PNP 100V 1A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23 (Type DN)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
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FZT493ATA FZT493ATA Diodes Incorporated FZT493A.pdf Description: TRANS NPN 100V 1A SOT223
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LMV393M8-13 LMV393M8-13 Diodes Incorporated LMV331_393.pdf Description: IC COMPARATOR 2 GEN PUR 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 2
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2.7V ~ 5.5V
Supplier Device Package: 8-MSOP
Propagation Delay (Max): 600ns
Current - Quiescent (Max): 200µA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 84mA
Part Status: Active
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PD3S160Q-7 PD3S160Q-7 Diodes Incorporated PD3S160Q.pdf Description: DIODE SCHOTTK 60V 1A POWERDI 323
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 38pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: PowerDI™ 323
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Qualification: AEC-Q101
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PDS360Q-13 PDS360Q-13 Diodes Incorporated PDS360Q.pdf Description: DIODE SCHOTTKY 60V 3A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 38pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Qualification: AEC-Q101
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SBR3U60SA-13 SBR3U60SA-13 Diodes Incorporated SBR3U60SA.pdf Description: DIODE SBR 60V 3A SMA
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SBRT2U45LP-7 SBRT2U45LP-7 Diodes Incorporated Description: DIODE SBR 45V 2A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 2A
Supplier Device Package: X1-DFN1411-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Qualification: AEC-Q101
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SBRT4U45LP-7 SBRT4U45LP-7 Diodes Incorporated SBRT4U45LP.pdf Description: DIODE SBR 45V 4A 2DFN
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ZXMP10A13FQTA ZXMP10A13FQTA Diodes Incorporated ZXMP10A13FQ.pdf Description: MOSFET P-CH 100V 600MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 600mA, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 141 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
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AP3105CVKTR-G1 AP3105CVKTR-G1 Diodes Incorporated Description: IC PWM CTLR CURR MODE
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AP3785TMTR-G1 AP3785TMTR-G1 Diodes Incorporated AP3785T.pdf Description: IC OFFLINE SWITCH FLYBACK 8SO
Power (Watts): 15 W
Voltage - Start Up: 13 V
Fault Protection: Over Temperature, Over Voltage, Short Circuit
Supplier Device Package: 8-SO
Voltage - Supply (Vcc/Vdd): 5.9V ~ 30V
Topology: Flyback
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: 80kHz
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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AP7335A-33W5-7 AP7335A-33W5-7 Diodes Incorporated AP7335A.pdf Description: IC REG LINEAR 3.3V 300MA SOT25
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Protection Features: Over Current, Over Temperature, Short Circuit
Voltage Dropout (Max): 0.2V @ 300mA
PSRR: 65dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: SOT-25
Number of Regulators: 1
Voltage - Input (Max): 6V
Current - Quiescent (Iq): 80 µA
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B2100AF-13 B2100AF-13 Diodes Incorporated B2100AF.pdf Description: DIODE SCHOTTKY 100V 2A SMAF
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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B360AM-13-F B360AM-13-F Diodes Incorporated B360AM.pdf Description: DIODE SCHOTTKY 60V 3A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
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DDZ15Q-7 DDZ15Q-7 Diodes Incorporated DDZ5V1B-DDZ43.pdf Description: DIODE ZENER 15V 310MW SOD123
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DDZ16Q-7 DDZ16Q-7 Diodes Incorporated DDZ5V1B-DDZ43.pdf Description: DIODE ZENER 16V 310MW SOD123
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DDZ17Q-7 DDZ17Q-7 Diodes Incorporated ds30407.pdf Description: DIODE ZENER 17V 310MW SOD123
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DMN3016LSS-13 DMN3016LSS-13 Diodes Incorporated DMN3016LSS.pdf Description: MOSFET N-CH 30V 10.3A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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DMP2023UFDF-7 DMP2023UFDF-7 Diodes Incorporated DMP2023UFDF.pdf Description: MOSFET P-CH 20V 7.6A 6UDFN
Input Capacitance (Ciss) (Max) @ Vds: 1837 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: U-DFN2020-6 (Type F)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 730mW (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
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FMMT493QTA FMMT493QTA Diodes Incorporated FMMT493.pdf Description: TRANS NPN 100V 1A SOT-23-3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: SOT-23-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 10V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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FMMT593QTA FMMT593QTA Diodes Incorporated FMMT593.pdf Description: TRANS PNP 100V 1A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23 (Type DN)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
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FZT493ATA FZT493ATA Diodes Incorporated FZT493A.pdf Description: TRANS NPN 100V 1A SOT223
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LMV393M8-13 LMV393M8-13 Diodes Incorporated LMV331_393.pdf Description: IC COMPARATOR 2 GEN PUR 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 2
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2.7V ~ 5.5V
Supplier Device Package: 8-MSOP
Propagation Delay (Max): 600ns
Current - Quiescent (Max): 200µA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 84mA
Part Status: Active
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PD3S160Q-7 PD3S160Q-7 Diodes Incorporated PD3S160Q.pdf Description: DIODE SCHOTTK 60V 1A POWERDI 323
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 38pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: PowerDI™ 323
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Qualification: AEC-Q101
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PDS360Q-13 PDS360Q-13 Diodes Incorporated PDS360Q.pdf Description: DIODE SCHOTTKY 60V 3A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 38pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Qualification: AEC-Q101
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SBR3U60SA-13 SBR3U60SA-13 Diodes Incorporated SBR3U60SA.pdf Description: DIODE SBR 60V 3A SMA
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SBRT2U45LP-7 SBRT2U45LP-7 Diodes Incorporated Description: DIODE SBR 45V 2A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 2A
Supplier Device Package: X1-DFN1411-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Qualification: AEC-Q101
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SBRT4U45LP-7 SBRT4U45LP-7 Diodes Incorporated SBRT4U45LP.pdf Description: DIODE SBR 45V 4A 2DFN
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ZXMP10A13FQTA ZXMP10A13FQTA Diodes Incorporated ZXMP10A13FQ.pdf Description: MOSFET P-CH 100V 600MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 600mA, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 141 pF @ 50 V
Qualification: AEC-Q101
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DDZ17Q-7 DDZ17Q-7 Diodes Incorporated ds30407.pdf Description: DIODE ZENER 17V 310MW SOD123
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SBR3U60SA-13 SBR3U60SA-13 Diodes Incorporated SBR3U60SA.pdf Description: DIODE SBR 60V 3A SMA
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DMP2023UFDF-13 DMP2023UFDF-13 Diodes Incorporated DMP2023UFDF.pdf Description: MOSFET P-CH 20V 7.6A 6UDFN
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: U-DFN2020-6 (Type F)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 730mW (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1837 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
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DMT3008LFDF-13 DMT3008LFDF-13 Diodes Incorporated DMT3008LFDF.pdf Description: MOSFET N-CH 30V 12A 6UDFN
Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: U-DFN2020-6 (Type F)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
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PT7C4511WE PT7C4511WE Diodes Incorporated PT7C4511.pdf Description: IC PLL CLOCK MULT 8-SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 200MHz
Input: Clock, Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.5V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: No/Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AP7342D-3030FS6-7 AP7342D-3030FS6-7 Diodes Incorporated AP7342.pdf Description: IC REG LINEAR 3V/3V X2DFN1212-6
Protection Features: Over Current
Voltage Dropout (Max): 0.29V @ 150mA, 0.29V @ 150mA
PSRR: 75dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 3V, 3V
Supplier Device Package: X2-DFN1212-6
Number of Regulators: 2
Voltage - Input (Max): 5.25V
Current - Quiescent (Iq): 100 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 150mA, 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-XFDFN Exposed Pad
Packaging: Tape & Reel (TR)
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AP7342D-3333FS6-7 AP7342D-3333FS6-7 Diodes Incorporated AP7342.pdf Description: IC REG LIN 3.3V/3.3V X2DFN1212-6
Protection Features: Over Current
Voltage Dropout (Max): 0.29V @ 150mA, 0.29V @ 150mA
PSRR: 75dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V, 3.3V
Supplier Device Package: X2-DFN1212-6
Number of Regulators: 2
Voltage - Input (Max): 5.25V
Current - Quiescent (Iq): 100 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 150mA, 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-XFDFN Exposed Pad
Packaging: Cut Tape (CT)
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AP7344D-3330RH4-7 AP7344D-3330RH4-7 Diodes Incorporated AP7344.pdf Description: IC REG LIN 3V/3.3V X2DFN1612-8
Protection Features: Over Current
Voltage Dropout (Max): 0.29V @ 300mA, 0.29V @ 300mA
PSRR: 75dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 3V, 3.3V
Supplier Device Package: X2-DFN1612-8
Number of Regulators: 2
Voltage - Input (Max): 5.25V
Current - Quiescent (Iq): 140 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA, 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-XFDFN Exposed Pad
Packaging: Cut Tape (CT)
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AP7344D-3018RH4-7 AP7344D-3018RH4-7 Diodes Incorporated AP7344.pdf Description: IC REG LIN 1.8V/3V X2DFN1612-8
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-XFDFN Exposed Pad
Packaging: Cut Tape (CT)
Protection Features: Over Current
Voltage Dropout (Max): 0.39V @ 300mA, 0.29V @ 300mA
PSRR: 75dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1.8V, 3V
Supplier Device Package: X2-DFN1612-8
Number of Regulators: 2
Voltage - Input (Max): 5.25V
Current - Quiescent (Iq): 140 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA, 300mA
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AP7344D-2828RH4-7 AP7344D-2828RH4-7 Diodes Incorporated AP7344.pdf Description: IC REG LIN 2.8V/2.8V X2DFN1612-8
Protection Features: Over Current
Voltage Dropout (Max): 0.3V @ 300mA, 0.3V @ 300mA
PSRR: 75dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 2.8V, 2.8V
Supplier Device Package: X2-DFN1612-8
Number of Regulators: 2
Voltage - Input (Max): 5.25V
Current - Quiescent (Iq): 140 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA, 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-XFDFN Exposed Pad
Packaging: Cut Tape (CT)
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AP431IANTR-G1 AP431IANTR-G1 Diodes Incorporated AP431i.pdf Description: IC VREF SHUNT ADJ 0.5% SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±0.5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 2.5V
Part Status: Active
Current - Cathode: 100 µA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
Produkt ist nicht verfügbar
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AP431IBNTR-G1 AP431IBNTR-G1 Diodes Incorporated AP431i.pdf Description: IC VREF SHUNT ADJ 1% SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±1%
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 2.5V
Part Status: Active
Current - Cathode: 100 µA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
Produkt ist nicht verfügbar
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AP431IANTR-G1 AP431IANTR-G1 Diodes Incorporated AP431i.pdf Description: IC VREF SHUNT ADJ 0.5% SOT23
Packaging: Cut Tape (CT)
Tolerance: ±0.5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 2.5V
Part Status: Active
Current - Cathode: 100 µA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
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AP431IARTR-G1 AP431IARTR-G1 Diodes Incorporated AP431i.pdf Description: IC VREF SHUNT ADJ 0.5% SOT89-3
Packaging: Cut Tape (CT)
Tolerance: ±0.5%
Package / Case: TO-243AA
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 2.5V
Part Status: Not For New Designs
Current - Cathode: 100 µA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
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63+0.33 EUR
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AP431IBNTR-G1 AP431IBNTR-G1 Diodes Incorporated AP431i.pdf Description: IC VREF SHUNT ADJ 1% SOT23
Packaging: Cut Tape (CT)
Tolerance: ±1%
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 2.5V
Part Status: Active
Current - Cathode: 100 µA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
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112+0.19 EUR
127+0.17 EUR
150+0.14 EUR
250+0.13 EUR
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RS1MWF-7 RS1MWF-7 Diodes Incorporated RS1MWF.pdf Description: DIODE STANDARD 1000V 1A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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6000+0.32 EUR
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DMN10H170SFDE-13 DMN10H170SFDE.pdf
DMN10H170SFDE-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 2.9A 6UDFN
Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: U-DFN2020-6 (Type E)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 660mW (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Tape & Reel (TR)
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DMN10H170SVT-13 DMN10H170SVT.pdf
DMN10H170SVT-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 2.6A TSOT26
Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TSOT-26
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
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10000+0.29 EUR
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DMN2041UFDB-13 DMN2041UFDB.pdf
DMN2041UFDB-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 4.7A 6UDFN
Produkt ist nicht verfügbar
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DMN2046U-13 DMN2046U.pdf
DMN2046U-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 3.4A SOT23
Produkt ist nicht verfügbar
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DMN32D4SDW-13 DMN32D4SDW.pdf
DMN32D4SDW-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 0.65A SOT363
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 250mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 650mA
Drain to Source Voltage (Vdss): 30V
Power - Max: 290mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
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10000+0.13 EUR
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DMP2060UFDB-13 DMP2060UFDB.pdf
DMP2060UFDB-13
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 20V 3.2A 6UDFN
Supplier Device Package: U-DFN2020-6 (Type B)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.9A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 881pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.4W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DMP2200UDW-13 DMP2200UDW.pdf
DMP2200UDW-13
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 20V 0.9A SOT363
Current - Continuous Drain (Id) @ 25°C: 900mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 450mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 260mOhm @ 880mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 184pF @ 10V
Produkt ist nicht verfügbar
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DMN3016LSS-13 DMN3016LSS.pdf
DMN3016LSS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 10.3A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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2500+0.36 EUR
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AP3785HMTR-G1
AP3785HMTR-G1
Hersteller: Diodes Incorporated
Description: IC OFFLINE SWITCH FLYBACK 8SO
Power (Watts): 15 W
Voltage - Start Up: 13 V
Fault Protection: Over Temperature, Over Voltage, Short Circuit
Supplier Device Package: 8-SO
Voltage - Supply (Vcc/Vdd): 5.9V ~ 30V
Topology: Flyback
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: 80kHz
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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B2100AF-13 B2100AF.pdf
B2100AF-13
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 100V 2A SMAF
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
auf Bestellung 110000 Stücke:
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10000+0.25 EUR
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B360AM-13-F B360AM.pdf
B360AM-13-F
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 60V 3A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
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5000+0.33 EUR
10000+0.3 EUR
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DDZ15Q-7 DDZ5V1B-DDZ43.pdf
DDZ15Q-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 15V 310MW SOD123
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3000+0.11 EUR
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DDZ16Q-7 DDZ5V1B-DDZ43.pdf
DDZ16Q-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 16V 310MW SOD123
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3000+0.11 EUR
6000+0.1 EUR
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150000+0.064 EUR
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DDZ17Q-7 ds30407.pdf
DDZ17Q-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 17V 310MW SOD123
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FMMT493QTA FMMT493.pdf
FMMT493QTA
Hersteller: Diodes Incorporated
Description: TRANS NPN 100V 1A SOT-23-3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: SOT-23-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 10V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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3000+0.26 EUR
6000+0.24 EUR
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75000+0.19 EUR
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FMMT593QTA FMMT593.pdf
FMMT593QTA
Hersteller: Diodes Incorporated
Description: TRANS PNP 100V 1A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23 (Type DN)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
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3000+0.31 EUR
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FZT493ATA FZT493A.pdf
FZT493ATA
Hersteller: Diodes Incorporated
Description: TRANS NPN 100V 1A SOT223
Produkt ist nicht verfügbar
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LMV393M8-13 LMV331_393.pdf
LMV393M8-13
Hersteller: Diodes Incorporated
Description: IC COMPARATOR 2 GEN PUR 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 2
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2.7V ~ 5.5V
Supplier Device Package: 8-MSOP
Propagation Delay (Max): 600ns
Current - Quiescent (Max): 200µA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 84mA
Part Status: Active
Produkt ist nicht verfügbar
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PD3S160Q-7 PD3S160Q.pdf
PD3S160Q-7
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTK 60V 1A POWERDI 323
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 38pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: PowerDI™ 323
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 90000 Stücke:
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AnzahlPrivatkunde
3000+0.3 EUR
6000+0.29 EUR
15000+0.27 EUR
21000+0.26 EUR
30000+0.25 EUR
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PDS360Q-13 PDS360Q.pdf
PDS360Q-13
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 60V 3A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 38pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Qualification: AEC-Q101
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5000+0.4 EUR
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SBR3U60SA-13 SBR3U60SA.pdf
SBR3U60SA-13
Hersteller: Diodes Incorporated
Description: DIODE SBR 60V 3A SMA
Produkt ist nicht verfügbar
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SBRT2U45LP-7
SBRT2U45LP-7
Hersteller: Diodes Incorporated
Description: DIODE SBR 45V 2A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 2A
Supplier Device Package: X1-DFN1411-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SBRT4U45LP-7 SBRT4U45LP.pdf
SBRT4U45LP-7
Hersteller: Diodes Incorporated
Description: DIODE SBR 45V 4A 2DFN
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ZXMP10A13FQTA ZXMP10A13FQ.pdf
ZXMP10A13FQTA
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 100V 600MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 600mA, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 141 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 63000 Stücke:
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3000+0.64 EUR
6000+0.6 EUR
9000+0.57 EUR
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AP3105CVKTR-G1
AP3105CVKTR-G1
Hersteller: Diodes Incorporated
Description: IC PWM CTLR CURR MODE
Produkt ist nicht verfügbar
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AP3785TMTR-G1 AP3785T.pdf
AP3785TMTR-G1
Hersteller: Diodes Incorporated
Description: IC OFFLINE SWITCH FLYBACK 8SO
Power (Watts): 15 W
Voltage - Start Up: 13 V
Fault Protection: Over Temperature, Over Voltage, Short Circuit
Supplier Device Package: 8-SO
Voltage - Supply (Vcc/Vdd): 5.9V ~ 30V
Topology: Flyback
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: 80kHz
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 3489 Stücke:
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7+3 EUR
12+1.83 EUR
25+1.54 EUR
100+1.19 EUR
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1000+0.84 EUR
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AP7335A-33W5-7 AP7335A.pdf
AP7335A-33W5-7
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 3.3V 300MA SOT25
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Protection Features: Over Current, Over Temperature, Short Circuit
Voltage Dropout (Max): 0.2V @ 300mA
PSRR: 65dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: SOT-25
Number of Regulators: 1
Voltage - Input (Max): 6V
Current - Quiescent (Iq): 80 µA
auf Bestellung 19468 Stücke:
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13+1.68 EUR
15+1.46 EUR
25+1.38 EUR
100+1.12 EUR
250+1.05 EUR
500+0.89 EUR
1000+0.71 EUR
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B2100AF-13 B2100AF.pdf
B2100AF-13
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 100V 2A SMAF
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
auf Bestellung 119883 Stücke:
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B360AM-13-F B360AM.pdf
B360AM-13-F
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 60V 3A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
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DDZ15Q-7 DDZ5V1B-DDZ43.pdf
DDZ15Q-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 15V 310MW SOD123
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33+0.65 EUR
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DDZ16Q-7 DDZ5V1B-DDZ43.pdf
DDZ16Q-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 16V 310MW SOD123
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DDZ17Q-7 ds30407.pdf
DDZ17Q-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 17V 310MW SOD123
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DMN3016LSS-13 DMN3016LSS.pdf
DMN3016LSS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 10.3A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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DMP2023UFDF-7 DMP2023UFDF.pdf
DMP2023UFDF-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 7.6A 6UDFN
Input Capacitance (Ciss) (Max) @ Vds: 1837 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: U-DFN2020-6 (Type F)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 730mW (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
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FMMT493QTA FMMT493.pdf
FMMT493QTA
Hersteller: Diodes Incorporated
Description: TRANS NPN 100V 1A SOT-23-3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: SOT-23-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 10V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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FMMT593QTA FMMT593.pdf
FMMT593QTA
Hersteller: Diodes Incorporated
Description: TRANS PNP 100V 1A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23 (Type DN)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
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FZT493ATA FZT493A.pdf
FZT493ATA
Hersteller: Diodes Incorporated
Description: TRANS NPN 100V 1A SOT223
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15+1.4 EUR
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LMV393M8-13 LMV331_393.pdf
LMV393M8-13
Hersteller: Diodes Incorporated
Description: IC COMPARATOR 2 GEN PUR 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 2
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2.7V ~ 5.5V
Supplier Device Package: 8-MSOP
Propagation Delay (Max): 600ns
Current - Quiescent (Max): 200µA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 84mA
Part Status: Active
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PD3S160Q-7 PD3S160Q.pdf
PD3S160Q-7
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTK 60V 1A POWERDI 323
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 38pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: PowerDI™ 323
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Qualification: AEC-Q101
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PDS360Q-13 PDS360Q.pdf
PDS360Q-13
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 60V 3A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 38pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Qualification: AEC-Q101
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18+1.19 EUR
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SBR3U60SA-13 SBR3U60SA.pdf
SBR3U60SA-13
Hersteller: Diodes Incorporated
Description: DIODE SBR 60V 3A SMA
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SBRT2U45LP-7
SBRT2U45LP-7
Hersteller: Diodes Incorporated
Description: DIODE SBR 45V 2A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 2A
Supplier Device Package: X1-DFN1411-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Qualification: AEC-Q101
auf Bestellung 51 Stücke:
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18+1.21 EUR
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SBRT4U45LP-7 SBRT4U45LP.pdf
SBRT4U45LP-7
Hersteller: Diodes Incorporated
Description: DIODE SBR 45V 4A 2DFN
auf Bestellung 4396 Stücke:
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ZXMP10A13FQTA ZXMP10A13FQ.pdf
ZXMP10A13FQTA
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 100V 600MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 600mA, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 141 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 65501 Stücke:
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DDZ17Q-7 ds30407.pdf
DDZ17Q-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 17V 310MW SOD123
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SBR3U60SA-13 SBR3U60SA.pdf
SBR3U60SA-13
Hersteller: Diodes Incorporated
Description: DIODE SBR 60V 3A SMA
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DMP2023UFDF-13 DMP2023UFDF.pdf
DMP2023UFDF-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 7.6A 6UDFN
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: U-DFN2020-6 (Type F)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 730mW (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1837 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
auf Bestellung 230000 Stücke:
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10000+0.44 EUR
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DMT3008LFDF-13 DMT3008LFDF.pdf
DMT3008LFDF-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 12A 6UDFN
Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: U-DFN2020-6 (Type F)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
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10000+0.49 EUR
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PT7C4511WE PT7C4511.pdf
PT7C4511WE
Hersteller: Diodes Incorporated
Description: IC PLL CLOCK MULT 8-SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 200MHz
Input: Clock, Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.5V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: No/Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AP7342D-3030FS6-7 AP7342.pdf
AP7342D-3030FS6-7
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 3V/3V X2DFN1212-6
Protection Features: Over Current
Voltage Dropout (Max): 0.29V @ 150mA, 0.29V @ 150mA
PSRR: 75dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 3V, 3V
Supplier Device Package: X2-DFN1212-6
Number of Regulators: 2
Voltage - Input (Max): 5.25V
Current - Quiescent (Iq): 100 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 150mA, 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-XFDFN Exposed Pad
Packaging: Tape & Reel (TR)
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5000+0.5 EUR
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AP7342D-3333FS6-7 AP7342.pdf
AP7342D-3333FS6-7
Hersteller: Diodes Incorporated
Description: IC REG LIN 3.3V/3.3V X2DFN1212-6
Protection Features: Over Current
Voltage Dropout (Max): 0.29V @ 150mA, 0.29V @ 150mA
PSRR: 75dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V, 3.3V
Supplier Device Package: X2-DFN1212-6
Number of Regulators: 2
Voltage - Input (Max): 5.25V
Current - Quiescent (Iq): 100 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 150mA, 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-XFDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 3725 Stücke:
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17+1.27 EUR
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AP7344D-3330RH4-7 AP7344.pdf
AP7344D-3330RH4-7
Hersteller: Diodes Incorporated
Description: IC REG LIN 3V/3.3V X2DFN1612-8
Protection Features: Over Current
Voltage Dropout (Max): 0.29V @ 300mA, 0.29V @ 300mA
PSRR: 75dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 3V, 3.3V
Supplier Device Package: X2-DFN1612-8
Number of Regulators: 2
Voltage - Input (Max): 5.25V
Current - Quiescent (Iq): 140 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA, 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-XFDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 4985 Stücke:
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16+1.32 EUR
19+1.17 EUR
25+1.09 EUR
100+0.89 EUR
250+0.82 EUR
500+0.7 EUR
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AP7344D-3018RH4-7 AP7344.pdf
AP7344D-3018RH4-7
Hersteller: Diodes Incorporated
Description: IC REG LIN 1.8V/3V X2DFN1612-8
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-XFDFN Exposed Pad
Packaging: Cut Tape (CT)
Protection Features: Over Current
Voltage Dropout (Max): 0.39V @ 300mA, 0.29V @ 300mA
PSRR: 75dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1.8V, 3V
Supplier Device Package: X2-DFN1612-8
Number of Regulators: 2
Voltage - Input (Max): 5.25V
Current - Quiescent (Iq): 140 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA, 300mA
auf Bestellung 4974 Stücke:
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16+1.32 EUR
18+1.18 EUR
25+1.11 EUR
100+0.9 EUR
250+0.83 EUR
500+0.71 EUR
1000+0.57 EUR
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AP7344D-2828RH4-7 AP7344.pdf
AP7344D-2828RH4-7
Hersteller: Diodes Incorporated
Description: IC REG LIN 2.8V/2.8V X2DFN1612-8
Protection Features: Over Current
Voltage Dropout (Max): 0.3V @ 300mA, 0.3V @ 300mA
PSRR: 75dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 2.8V, 2.8V
Supplier Device Package: X2-DFN1612-8
Number of Regulators: 2
Voltage - Input (Max): 5.25V
Current - Quiescent (Iq): 140 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA, 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-XFDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 4950 Stücke:
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16+1.36 EUR
18+1.2 EUR
25+1.13 EUR
100+0.93 EUR
250+0.86 EUR
500+0.73 EUR
1000+0.58 EUR
2500+0.54 EUR
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AP431IANTR-G1 AP431i.pdf
AP431IANTR-G1
Hersteller: Diodes Incorporated
Description: IC VREF SHUNT ADJ 0.5% SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±0.5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 2.5V
Part Status: Active
Current - Cathode: 100 µA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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AP431IBNTR-G1 AP431i.pdf
AP431IBNTR-G1
Hersteller: Diodes Incorporated
Description: IC VREF SHUNT ADJ 1% SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±1%
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 2.5V
Part Status: Active
Current - Cathode: 100 µA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
Produkt ist nicht verfügbar
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AP431IANTR-G1 AP431i.pdf
AP431IANTR-G1
Hersteller: Diodes Incorporated
Description: IC VREF SHUNT ADJ 0.5% SOT23
Packaging: Cut Tape (CT)
Tolerance: ±0.5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 2.5V
Part Status: Active
Current - Cathode: 100 µA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
auf Bestellung 250 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
67+0.31 EUR
96+0.21 EUR
109+0.19 EUR
128+0.17 EUR
250+0.15 EUR
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AP431IARTR-G1 AP431i.pdf
AP431IARTR-G1
Hersteller: Diodes Incorporated
Description: IC VREF SHUNT ADJ 0.5% SOT89-3
Packaging: Cut Tape (CT)
Tolerance: ±0.5%
Package / Case: TO-243AA
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 2.5V
Part Status: Not For New Designs
Current - Cathode: 100 µA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
auf Bestellung 14850 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
39+0.55 EUR
56+0.38 EUR
63+0.33 EUR
100+0.29 EUR
250+0.26 EUR
500+0.25 EUR
Mindestbestellmenge: 39 Stücke
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AP431IBNTR-G1 AP431i.pdf
AP431IBNTR-G1
Hersteller: Diodes Incorporated
Description: IC VREF SHUNT ADJ 1% SOT23
Packaging: Cut Tape (CT)
Tolerance: ±1%
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 2.5V
Part Status: Active
Current - Cathode: 100 µA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
auf Bestellung 465 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
72+0.3 EUR
112+0.19 EUR
127+0.17 EUR
150+0.14 EUR
250+0.13 EUR
Mindestbestellmenge: 72 Stücke
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RS1MWF-7 RS1MWF.pdf
RS1MWF-7
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 1000V 1A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 78000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.36 EUR
6000+0.32 EUR
9000+0.31 EUR
15000+0.3 EUR
21000+0.29 EUR
30000+0.27 EUR
Mindestbestellmenge: 3000 Stücke
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