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AP3108LSS9-13 AP3108LSS9-13 Diodes Incorporated AP3108LS.pdf Description: ACDC SINGLE ENDED CONT SSOP-9 T&
Packaging: Tape & Reel (TR)
Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads
Mounting Type: Surface Mount
Voltage - Input: 10V ~ 50V
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 10V ~ 28V
Applications: Switching AC-DC Adapter/Charger
Supplier Device Package: 9-SSOP
Part Status: Active
Current - Supply: 1.7 mA
DigiKey Programmable: Not Verified
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FN2400067 FN2400067 Diodes Incorporated FN2400067.pdf Description: XTAL OSC XO 24.0000MHZ CMOS
Packaging: Tape & Reel (TR)
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Part Status: Active
Frequency: 24 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
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S1MSWFM-7 S1MSWFM-7 Diodes Incorporated S1MSWFM.pdf Description: DIODE GEN PURP 1KV 1A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 2.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Qualification: AEC-Q101
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S1MSWFM-7 S1MSWFM-7 Diodes Incorporated S1MSWFM.pdf Description: DIODE GEN PURP 1KV 1A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 2.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Qualification: AEC-Q101
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S1KP1M-7 S1KP1M-7 Diodes Incorporated S1KP1M.pdf Description: DIODE STD 800V 1A POWERDI123
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Qualification: AEC-Q101
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S1KP1M-7 S1KP1M-7 Diodes Incorporated S1KP1M.pdf Description: DIODE STD 800V 1A POWERDI123
Packaging: Cut Tape (CT)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Qualification: AEC-Q101
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RS1MSWFM-7 RS1MSWFM-7 Diodes Incorporated RS1MSWFM.pdf Description: DIODE STANDARD 1000V 1A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 4.7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
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RS1MSWFM-7 RS1MSWFM-7 Diodes Incorporated RS1MSWFM.pdf Description: DIODE STANDARD 1000V 1A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 4.7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
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S1MWFM-7 S1MWFM-7 Diodes Incorporated S1MWFM.pdf Description: DIODE STANDARD 1000V 1A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
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S1MWFM-7 S1MWFM-7 Diodes Incorporated S1MWFM.pdf Description: DIODE STANDARD 1000V 1A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
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S1MSP1M-7 S1MSP1M-7 Diodes Incorporated S1MSP1M.pdf Description: DIODE STD 1000V 1A POWERDI123
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 2.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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S1MSP1M-7 S1MSP1M-7 Diodes Incorporated S1MSP1M.pdf Description: DIODE STD 1000V 1A POWERDI123
Packaging: Cut Tape (CT)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 2.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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RS1MSWFMQ-7 RS1MSWFMQ-7 Diodes Incorporated RS1MSWFMQ.pdf Description: DIODE STANDARD 1000V 1A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 4.7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Qualification: AEC-Q101
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RS1MSWFMQ-7 RS1MSWFMQ-7 Diodes Incorporated RS1MSWFMQ.pdf Description: DIODE STANDARD 1000V 1A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 4.7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Qualification: AEC-Q101
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PI2USB3212ZHEX PI2USB3212ZHEX Diodes Incorporated PI2USB3212db.pdf Description: IC USB SWITCH 28TQFN
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PI2USB3212ZHEX PI2USB3212ZHEX Diodes Incorporated PI2USB3212db.pdf Description: IC USB SWITCH 28TQFN
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PI5A23157ZUAEX PI5A23157ZUAEX Diodes Incorporated PI5A23157.pdf Description: IC SWITCH SPDT X 2 15OHM 10UQFN
Packaging: Tape & Reel (TR)
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 220MHz
Supplier Device Package: 10-UQFN (1.5x2)
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -66dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 12ns, 8ns
Channel Capacitance (CS(off), CD(off)): 2.8pF
Current - Leakage (IS(off)) (Max): 1µA
Part Status: Active
Number of Circuits: 2
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PI5A23157ZUAEX PI5A23157ZUAEX Diodes Incorporated PI5A23157.pdf Description: IC SWITCH SPDT X 2 15OHM 10UQFN
Packaging: Cut Tape (CT)
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 220MHz
Supplier Device Package: 10-UQFN (1.5x2)
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -66dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 12ns, 8ns
Channel Capacitance (CS(off), CD(off)): 2.8pF
Current - Leakage (IS(off)) (Max): 1µA
Part Status: Active
Number of Circuits: 2
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ZXTN25015DFHTA ZXTN25015DFHTA Diodes Incorporated ZXTN25015DFH.pdf Description: TRANS NPN 15V 5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 215mV @ 100mA, 5A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 2A, 2V
Frequency - Transition: 240MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 730 mW
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FP6400002 FP6400002 Diodes Incorporated FP.pdf Description: CRYSTAL 64.0000MHZ 18PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 18pF
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±30ppm
Frequency Tolerance: ±30ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.045" (1.15mm)
Part Status: Obsolete
ESR (Equivalent Series Resistance): 100 Ohms
Frequency: 64 MHz
Produkt ist nicht verfügbar
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F61350007 F61350007 Diodes Incorporated F6_FX.pdf Description: CRYSTAL 13.5600MHZ 18PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Load Capacitance: 18pF
Size / Dimension: 0.236" L x 0.138" W (6.00mm x 3.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±30ppm
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.053" (1.35mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 13.56 MHz
Produkt ist nicht verfügbar
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MMSTA56-7 MMSTA56-7 Diodes Incorporated ds30167.pdf Description: TRANS PNP 80V 0.5A SC70-3
Packaging: Cut Tape (CT)
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DXTN5820DFDB-7 DXTN5820DFDB-7 Diodes Incorporated DXTN5820DFDB.pdf Description: SS LOW SAT TRANSISTOR U-DFN2020-
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 275mV @ 300mA, 6A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 280 @ 500mA, 2V
Frequency - Transition: 80MHz
Supplier Device Package: U-DFN2020-3 (Type B)
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 690 mW
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FCX1053AQTA FCX1053AQTA Diodes Incorporated FCX1053AQ.pdf Description: TRANS NPN 120V 1.5A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 320mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 200mA, 5V
Frequency - Transition: 280MHz
Supplier Device Package: MPT3
Grade: Automotive
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 500 mW
Qualification: AEC-Q101
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BAS116Q-13-F BAS116Q-13-F Diodes Incorporated ds30233.pdf Description: DIODE STANDARD 85V 215MA SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Qualification: AEC-Q101
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50000+0.048 EUR
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BAV170Q-13-F BAV170Q-13-F Diodes Incorporated ds30234.pdf Description: DIODE ARRAY GP 85V 215MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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74LVC1G14FX4-7 74LVC1G14FX4-7 Diodes Incorporated 74LVC1G14.pdf Description: IC INVERTER 1CH 1-INP DFN1409-6
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 1
Supplier Device Package: X2-DFN1409-6
Input Logic Level - High: 1.2V ~ 3.33V
Input Logic Level - Low: 0.3V ~ 1.45V
Max Propagation Delay @ V, Max CL: 6.5ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 10 µA
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PI3WVR14412ZLCEX PI3WVR14412ZLCEX Diodes Incorporated PI3WVR14412-Product-Brief.pdf Description: DISPLAY SWITCH W-QFN3060-40 T&R
Packaging: Tape & Reel (TR)
Package / Case: 40-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Switch
Voltage - Supply: 2.97V ~ 3.63V
Applications: Video Display
Standards: HDMI 2.1
Supplier Device Package: 40-TQFN (3x6)
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DMC3060LVTQ-13 DMC3060LVTQ-13 Diodes Incorporated DMC3060LVTQ.pdf Description: MOSFET N/P-CH 30V 3.6A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 830mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta), 2.8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V, 324pF @ 15V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V, 8.6nC @ 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA, 2.1V @ 250µA
Supplier Device Package: TSOT-26
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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DMC3060LVTQ-7 DMC3060LVTQ-7 Diodes Incorporated DMC3060LVTQ.pdf Description: MOSFET N/P-CH 30V 3.6A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 830mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta), 2.8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V, 324pF @ 15V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V, 8.6nC @ 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA, 2.1V @ 250µA
Supplier Device Package: TSOT-26
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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PI2EQX502TZHE+DAX PI2EQX502TZHE+DAX Diodes Incorporated PI2EQX502T-Prod-Brief.pdf Description: IC REDRIVER USB 3.0 1CH 16TQFN
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ZXMN2AMCTA ZXMN2AMCTA Diodes Incorporated ZXMN2AMC.pdf Description: MOSFET 2N-CH 20V 3.7A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 299pF @ 15V
Rds On (Max) @ Id, Vgs: 120mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: DFN3020B-8
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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ZXMN2AMCTA ZXMN2AMCTA Diodes Incorporated ZXMN2AMC.pdf Description: MOSFET 2N-CH 20V 3.7A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 299pF @ 15V
Rds On (Max) @ Id, Vgs: 120mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: DFN3020B-8
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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ZXMN3AMCTA ZXMN3AMCTA Diodes Incorporated ZXMN3AMC.pdf Description: MOSFET 2N-CH 30V 3.7A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 25V
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: DFN3020B-8
Grade: Automotive
Qualification: AEC-Q101
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DMT3020LFDB-13 DMT3020LFDB-13 Diodes Incorporated DMT3020LFDB.pdf Description: MOSFET 2N-CH 30V 7.7A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Grade: Automotive
Qualification: AEC-Q101
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PI6LC48P0201LIEX PI6LC48P0201LIEX Diodes Incorporated PI6LC48P0201.pdf Description: 2-OUTPUT ETHERNET LVPECL SYNTHES
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVPECL
Frequency - Max: 170MHz
Input: LVCMOS, LVTTL, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.375V ~ 2.625V, 2.97V ~ 3.63V
Main Purpose: Ethernet
Ratio - Input:Output: 2:2
Differential - Input:Output: No/Yes
Supplier Device Package: 20-TSSOP
PLL: Yes with Bypass
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
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PI6LC48P0201LIEX PI6LC48P0201LIEX Diodes Incorporated PI6LC48P0201.pdf Description: 2-OUTPUT ETHERNET LVPECL SYNTHES
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVPECL
Frequency - Max: 170MHz
Input: LVCMOS, LVTTL, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.375V ~ 2.625V, 2.97V ~ 3.63V
Main Purpose: Ethernet
Ratio - Input:Output: 2:2
Differential - Input:Output: No/Yes
Supplier Device Package: 20-TSSOP
PLL: Yes with Bypass
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
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PI6LC48S25BZBBIEX PI6LC48S25BZBBIEX Diodes Incorporated PI6LC48S25B.pdf Description: IC CLOCK GENERATOR 56TQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Output: LVDS, LVPECL
Frequency - Max: 312.5MHz
Type: Clock Generator
Input: CMOS, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.375V ~ 3.63V
Ratio - Input:Output: 3:11
Differential - Input:Output: Yes/Yes
Supplier Device Package: 56-TQFN (8x8)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
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PI6LC48S25BZBBIEX PI6LC48S25BZBBIEX Diodes Incorporated PI6LC48S25B.pdf Description: IC CLOCK GENERATOR 56TQFN
Packaging: Cut Tape (CT)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Output: LVDS, LVPECL
Frequency - Max: 312.5MHz
Type: Clock Generator
Input: CMOS, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.375V ~ 3.63V
Ratio - Input:Output: 3:11
Differential - Input:Output: Yes/Yes
Supplier Device Package: 56-TQFN (8x8)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
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PI6LC48P0201LE PI6LC48P0201LE Diodes Incorporated PI6LC48P0201.pdf Description: 2-OUTPUT ETHERNET LVPECL SYNTHES
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PI6LC48H02QLIEX Diodes Incorporated PI6LC48H02Q.pdf Description: CLOCK GENERATOR TSSOP-16 T&R 2.5
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PI6LC48P0101LIEX PI6LC48P0101LIEX Diodes Incorporated PI6LC48L0201.pdf Description: HIFLEX 10GBE CLOCK GENERATOR
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PI6LC48C21LIEX PI6LC48C21LIEX Diodes Incorporated PI6LC48C21.pdf Description: 125MHZ CMOS SYNTHESIZER
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PI6LC48P25104LEX PI6LC48P25104LEX Diodes Incorporated PI6LC48P25104.pdf Description: 156.25MHZ LVPECL SYNTHESIZER
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVPECL
Frequency - Max: 187.5MHz
Input: Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.465V
Main Purpose: Ethernet
Ratio - Input:Output: 1:1
Differential - Input:Output: No/Yes
Supplier Device Package: 8-TSSOP
PLL: Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
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PI6LC48P25104LIEX PI6LC48P25104LIEX Diodes Incorporated PI6LC48P25104.pdf Description: 156.25MHZ LVPECL SYNTHESIZER
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PI6LC48C21LEX PI6LC48C21LEX Diodes Incorporated PI6LC48C21.pdf Description: 125MHZ CMOS SYNTHESIZER
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PI6LC48P03AZHIE PI6LC48P03AZHIE Diodes Incorporated PI6LC48P03A.pdf Description: 3-OUTPUT LVPECL NETWORKING CLOCK
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D3V3H1U2LP-7B D3V3H1U2LP-7B Diodes Incorporated D3V3H1U2LP.pdf Description: TVS DIODE 3.3VWM 10VC X1DFN10062
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 280pF @ 1MHz
Current - Peak Pulse (10/1000µs): 35A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: X1-DFN1006-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 10V
Power - Peak Pulse: 350W
Power Line Protection: No
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D3V3H1U2LP-7B D3V3H1U2LP-7B Diodes Incorporated D3V3H1U2LP.pdf Description: TVS DIODE 3.3VWM 10VC X1DFN10062
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 280pF @ 1MHz
Current - Peak Pulse (10/1000µs): 35A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: X1-DFN1006-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 10V
Power - Peak Pulse: 350W
Power Line Protection: No
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LSP78L05AATB LSP78L05AATB Diodes Incorporated Description: IC REGULATOR
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 5.5 mA
Voltage - Input (Max): 20V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
PSRR: 62dB (120Hz)
Voltage Dropout (Max): 1.8V @ 100mA
Protection Features: Over Temperature, Short Circuit
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P6SMAJ33ADFQ-13 P6SMAJ33ADFQ-13 Diodes Incorporated P6SMAJ5.0ADFQ_P6SMAJ85ADFQ.pdf Description: TVS DIODE 33VWM 53.3VC DFLAT
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 11.3A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: D-Flat
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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FS2MED-7 FS2MED-7 Diodes Incorporated FS2MED.pdf Description: DIODE GEN PURP 1KV 2A DO219AA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1 µs
Technology: Standard
Capacitance @ Vr, F: 12.3pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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FS2MED-7 FS2MED-7 Diodes Incorporated FS2MED.pdf Description: DIODE GEN PURP 1KV 2A DO219AA
Packaging: Cut Tape (CT)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1 µs
Technology: Standard
Capacitance @ Vr, F: 12.3pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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ZXMN10A11KTC ZXMN10A11KTC Diodes Incorporated ZXMN10A11K.pdf Description: MOSFET N-CH 100V 2.4A TO252-2
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 2.6A, 10V
Power Dissipation (Max): 2.11W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 274 pF @ 50 V
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ZXMN10A11K ZXMN10A11K Diodes Incorporated ZXMN10A11K.pdf Description: MOSFET N-CH 100V 2.4A TO252-3
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ZXMN10A11K ZXMN10A11K Diodes Incorporated ZXMN10A11K.pdf Description: MOSFET N-CH 100V 2.4A TO252-3
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ZXMN10A08E6QTA ZXMN10A08E6QTA Diodes Incorporated Description: MOSFET BVDSS: 61V~100V SOT26 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 3.2A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 50 V
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DDZX9V1CQ-7 DDZX9V1CQ-7 Diodes Incorporated Description: DIODE ZENER 9.1V 300MW SOT23
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SBR1045SP5-7D SBR1045SP5-7D Diodes Incorporated Description: DIODE SBR 45V 10A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Capacitance @ Vr, F: 500pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 450 µA @ 45 V
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BZX84C7V5Q-13-F BZX84C7V5Q-13-F Diodes Incorporated ds18001.pdf Description: DIODE ZENER 7.5V 300MW SOT23
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Qualification: AEC-Q101
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AP3108LSS9-13 AP3108LS.pdf
AP3108LSS9-13
Hersteller: Diodes Incorporated
Description: ACDC SINGLE ENDED CONT SSOP-9 T&
Packaging: Tape & Reel (TR)
Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads
Mounting Type: Surface Mount
Voltage - Input: 10V ~ 50V
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 10V ~ 28V
Applications: Switching AC-DC Adapter/Charger
Supplier Device Package: 9-SSOP
Part Status: Active
Current - Supply: 1.7 mA
DigiKey Programmable: Not Verified
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.61 EUR
Mindestbestellmenge: 4000
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FN2400067 FN2400067.pdf
FN2400067
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 24.0000MHZ CMOS
Packaging: Tape & Reel (TR)
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Part Status: Active
Frequency: 24 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
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S1MSWFM-7 S1MSWFM.pdf
S1MSWFM-7
Hersteller: Diodes Incorporated
Description: DIODE GEN PURP 1KV 1A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 2.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Qualification: AEC-Q101
auf Bestellung 981000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.14 EUR
6000+0.13 EUR
9000+0.12 EUR
15000+0.11 EUR
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S1MSWFM-7 S1MSWFM.pdf
S1MSWFM-7
Hersteller: Diodes Incorporated
Description: DIODE GEN PURP 1KV 1A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 2.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Qualification: AEC-Q101
auf Bestellung 982400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.72 EUR
41+0.44 EUR
100+0.28 EUR
500+0.21 EUR
1000+0.18 EUR
Mindestbestellmenge: 25
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S1KP1M-7 S1KP1M.pdf
S1KP1M-7
Hersteller: Diodes Incorporated
Description: DIODE STD 800V 1A POWERDI123
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.1 EUR
6000+0.09 EUR
Mindestbestellmenge: 3000
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S1KP1M-7 S1KP1M.pdf
S1KP1M-7
Hersteller: Diodes Incorporated
Description: DIODE STD 800V 1A POWERDI123
Packaging: Cut Tape (CT)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Qualification: AEC-Q101
auf Bestellung 7650 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+0.33 EUR
77+0.23 EUR
106+0.17 EUR
500+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 53
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RS1MSWFM-7 RS1MSWFM.pdf
RS1MSWFM-7
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 1000V 1A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 4.7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.13 EUR
6000+0.12 EUR
Mindestbestellmenge: 3000
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RS1MSWFM-7 RS1MSWFM.pdf
RS1MSWFM-7
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 1000V 1A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 4.7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9410 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
33+0.55 EUR
49+0.36 EUR
100+0.27 EUR
500+0.22 EUR
1000+0.2 EUR
Mindestbestellmenge: 33
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S1MWFM-7 S1MWFM.pdf
S1MWFM-7
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 1000V 1A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 51000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.14 EUR
6000+0.1 EUR
9000+0.098 EUR
15000+0.095 EUR
30000+0.092 EUR
Mindestbestellmenge: 3000
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S1MWFM-7 S1MWFM.pdf
S1MWFM-7
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 1000V 1A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 53778 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
35+0.51 EUR
54+0.33 EUR
100+0.2 EUR
500+0.18 EUR
1000+0.16 EUR
Mindestbestellmenge: 35
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S1MSP1M-7 S1MSP1M.pdf
S1MSP1M-7
Hersteller: Diodes Incorporated
Description: DIODE STD 1000V 1A POWERDI123
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 2.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
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S1MSP1M-7 S1MSP1M.pdf
S1MSP1M-7
Hersteller: Diodes Incorporated
Description: DIODE STD 1000V 1A POWERDI123
Packaging: Cut Tape (CT)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 2.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 2225 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
80+0.22 EUR
130+0.14 EUR
500+0.12 EUR
1000+0.11 EUR
Mindestbestellmenge: 56
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RS1MSWFMQ-7 RS1MSWFMQ.pdf
RS1MSWFMQ-7
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 1000V 1A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 4.7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.19 EUR
Mindestbestellmenge: 3000
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RS1MSWFMQ-7 RS1MSWFMQ.pdf
RS1MSWFMQ-7
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 1000V 1A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 4.7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Qualification: AEC-Q101
auf Bestellung 3001 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.88 EUR
33+0.54 EUR
100+0.35 EUR
500+0.26 EUR
1000+0.23 EUR
Mindestbestellmenge: 20
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PI2USB3212ZHEX PI2USB3212db.pdf
PI2USB3212ZHEX
Hersteller: Diodes Incorporated
Description: IC USB SWITCH 28TQFN
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3500+3.02 EUR
Mindestbestellmenge: 3500
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PI2USB3212ZHEX PI2USB3212db.pdf
PI2USB3212ZHEX
Hersteller: Diodes Incorporated
Description: IC USB SWITCH 28TQFN
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.65 EUR
10+5.07 EUR
25+4.8 EUR
100+4.16 EUR
250+3.94 EUR
500+3.54 EUR
1000+3.02 EUR
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PI5A23157ZUAEX PI5A23157.pdf
PI5A23157ZUAEX
Hersteller: Diodes Incorporated
Description: IC SWITCH SPDT X 2 15OHM 10UQFN
Packaging: Tape & Reel (TR)
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 220MHz
Supplier Device Package: 10-UQFN (1.5x2)
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -66dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 12ns, 8ns
Channel Capacitance (CS(off), CD(off)): 2.8pF
Current - Leakage (IS(off)) (Max): 1µA
Part Status: Active
Number of Circuits: 2
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.56 EUR
6000+0.52 EUR
15000+0.5 EUR
30000+0.48 EUR
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PI5A23157ZUAEX PI5A23157.pdf
PI5A23157ZUAEX
Hersteller: Diodes Incorporated
Description: IC SWITCH SPDT X 2 15OHM 10UQFN
Packaging: Cut Tape (CT)
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 220MHz
Supplier Device Package: 10-UQFN (1.5x2)
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -66dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 12ns, 8ns
Channel Capacitance (CS(off), CD(off)): 2.8pF
Current - Leakage (IS(off)) (Max): 1µA
Part Status: Active
Number of Circuits: 2
auf Bestellung 34695 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.44 EUR
14+1.28 EUR
25+1.2 EUR
100+0.98 EUR
250+0.91 EUR
500+0.77 EUR
1000+0.62 EUR
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ZXTN25015DFHTA ZXTN25015DFH.pdf
ZXTN25015DFHTA
Hersteller: Diodes Incorporated
Description: TRANS NPN 15V 5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 215mV @ 100mA, 5A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 2A, 2V
Frequency - Transition: 240MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 730 mW
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.34 EUR
6000+0.32 EUR
Mindestbestellmenge: 3000
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FP6400002 FP.pdf
FP6400002
Hersteller: Diodes Incorporated
Description: CRYSTAL 64.0000MHZ 18PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 18pF
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±30ppm
Frequency Tolerance: ±30ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.045" (1.15mm)
Part Status: Obsolete
ESR (Equivalent Series Resistance): 100 Ohms
Frequency: 64 MHz
Produkt ist nicht verfügbar
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F61350007 F6_FX.pdf
F61350007
Hersteller: Diodes Incorporated
Description: CRYSTAL 13.5600MHZ 18PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Load Capacitance: 18pF
Size / Dimension: 0.236" L x 0.138" W (6.00mm x 3.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±30ppm
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.053" (1.35mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 13.56 MHz
Produkt ist nicht verfügbar
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MMSTA56-7 ds30167.pdf
MMSTA56-7
Hersteller: Diodes Incorporated
Description: TRANS PNP 80V 0.5A SC70-3
Packaging: Cut Tape (CT)
auf Bestellung 1530 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
67+0.26 EUR
76+0.23 EUR
100+0.2 EUR
500+0.19 EUR
Mindestbestellmenge: 67
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DXTN5820DFDB-7 DXTN5820DFDB.pdf
DXTN5820DFDB-7
Hersteller: Diodes Incorporated
Description: SS LOW SAT TRANSISTOR U-DFN2020-
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 275mV @ 300mA, 6A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 280 @ 500mA, 2V
Frequency - Transition: 80MHz
Supplier Device Package: U-DFN2020-3 (Type B)
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 690 mW
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.28 EUR
6000+0.27 EUR
Mindestbestellmenge: 3000
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FCX1053AQTA FCX1053AQ.pdf
FCX1053AQTA
Hersteller: Diodes Incorporated
Description: TRANS NPN 120V 1.5A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 320mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 200mA, 5V
Frequency - Transition: 280MHz
Supplier Device Package: MPT3
Grade: Automotive
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 500 mW
Qualification: AEC-Q101
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+0.44 EUR
2000+0.39 EUR
5000+0.37 EUR
10000+0.35 EUR
Mindestbestellmenge: 1000
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BAS116Q-13-F ds30233.pdf
BAS116Q-13-F
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 85V 215MA SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Qualification: AEC-Q101
auf Bestellung 170000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.059 EUR
20000+0.054 EUR
30000+0.051 EUR
50000+0.048 EUR
70000+0.046 EUR
100000+0.044 EUR
Mindestbestellmenge: 10000
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BAV170Q-13-F ds30234.pdf
BAV170Q-13-F
Hersteller: Diodes Incorporated
Description: DIODE ARRAY GP 85V 215MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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74LVC1G14FX4-7 74LVC1G14.pdf
74LVC1G14FX4-7
Hersteller: Diodes Incorporated
Description: IC INVERTER 1CH 1-INP DFN1409-6
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 1
Supplier Device Package: X2-DFN1409-6
Input Logic Level - High: 1.2V ~ 3.33V
Input Logic Level - Low: 0.3V ~ 1.45V
Max Propagation Delay @ V, Max CL: 6.5ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 10 µA
Produkt ist nicht verfügbar
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PI3WVR14412ZLCEX PI3WVR14412-Product-Brief.pdf
PI3WVR14412ZLCEX
Hersteller: Diodes Incorporated
Description: DISPLAY SWITCH W-QFN3060-40 T&R
Packaging: Tape & Reel (TR)
Package / Case: 40-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Switch
Voltage - Supply: 2.97V ~ 3.63V
Applications: Video Display
Standards: HDMI 2.1
Supplier Device Package: 40-TQFN (3x6)
auf Bestellung 24500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3500+2.83 EUR
Mindestbestellmenge: 3500
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DMC3060LVTQ-13 DMC3060LVTQ.pdf
DMC3060LVTQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 3.6A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 830mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta), 2.8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V, 324pF @ 15V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V, 8.6nC @ 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA, 2.1V @ 250µA
Supplier Device Package: TSOT-26
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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DMC3060LVTQ-7 DMC3060LVTQ.pdf
DMC3060LVTQ-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 3.6A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 830mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta), 2.8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V, 324pF @ 15V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V, 8.6nC @ 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA, 2.1V @ 250µA
Supplier Device Package: TSOT-26
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.27 EUR
6000+0.24 EUR
9000+0.23 EUR
15000+0.22 EUR
21000+0.21 EUR
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PI2EQX502TZHE+DAX PI2EQX502T-Prod-Brief.pdf
PI2EQX502TZHE+DAX
Hersteller: Diodes Incorporated
Description: IC REDRIVER USB 3.0 1CH 16TQFN
Produkt ist nicht verfügbar
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ZXMN2AMCTA ZXMN2AMC.pdf
ZXMN2AMCTA
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 3.7A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 299pF @ 15V
Rds On (Max) @ Id, Vgs: 120mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: DFN3020B-8
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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ZXMN2AMCTA ZXMN2AMC.pdf
ZXMN2AMCTA
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 3.7A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 299pF @ 15V
Rds On (Max) @ Id, Vgs: 120mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: DFN3020B-8
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 4 Stücke:
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ZXMN3AMCTA ZXMN3AMC.pdf
ZXMN3AMCTA
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 3.7A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 25V
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: DFN3020B-8
Grade: Automotive
Qualification: AEC-Q101
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DMT3020LFDB-13 DMT3020LFDB.pdf
DMT3020LFDB-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 7.7A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.32 EUR
Mindestbestellmenge: 10000
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PI6LC48P0201LIEX PI6LC48P0201.pdf
PI6LC48P0201LIEX
Hersteller: Diodes Incorporated
Description: 2-OUTPUT ETHERNET LVPECL SYNTHES
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVPECL
Frequency - Max: 170MHz
Input: LVCMOS, LVTTL, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.375V ~ 2.625V, 2.97V ~ 3.63V
Main Purpose: Ethernet
Ratio - Input:Output: 2:2
Differential - Input:Output: No/Yes
Supplier Device Package: 20-TSSOP
PLL: Yes with Bypass
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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PI6LC48P0201LIEX PI6LC48P0201.pdf
PI6LC48P0201LIEX
Hersteller: Diodes Incorporated
Description: 2-OUTPUT ETHERNET LVPECL SYNTHES
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVPECL
Frequency - Max: 170MHz
Input: LVCMOS, LVTTL, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.375V ~ 2.625V, 2.97V ~ 3.63V
Main Purpose: Ethernet
Ratio - Input:Output: 2:2
Differential - Input:Output: No/Yes
Supplier Device Package: 20-TSSOP
PLL: Yes with Bypass
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
auf Bestellung 1075 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.67 EUR
10+7.75 EUR
25+6.73 EUR
100+5.57 EUR
250+5 EUR
500+4.7 EUR
Mindestbestellmenge: 2
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PI6LC48S25BZBBIEX PI6LC48S25B.pdf
PI6LC48S25BZBBIEX
Hersteller: Diodes Incorporated
Description: IC CLOCK GENERATOR 56TQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Output: LVDS, LVPECL
Frequency - Max: 312.5MHz
Type: Clock Generator
Input: CMOS, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.375V ~ 3.63V
Ratio - Input:Output: 3:11
Differential - Input:Output: Yes/Yes
Supplier Device Package: 56-TQFN (8x8)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
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PI6LC48S25BZBBIEX PI6LC48S25B.pdf
PI6LC48S25BZBBIEX
Hersteller: Diodes Incorporated
Description: IC CLOCK GENERATOR 56TQFN
Packaging: Cut Tape (CT)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Output: LVDS, LVPECL
Frequency - Max: 312.5MHz
Type: Clock Generator
Input: CMOS, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.375V ~ 3.63V
Ratio - Input:Output: 3:11
Differential - Input:Output: Yes/Yes
Supplier Device Package: 56-TQFN (8x8)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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PI6LC48P0201LE PI6LC48P0201.pdf
PI6LC48P0201LE
Hersteller: Diodes Incorporated
Description: 2-OUTPUT ETHERNET LVPECL SYNTHES
Produkt ist nicht verfügbar
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PI6LC48H02QLIEX PI6LC48H02Q.pdf
Hersteller: Diodes Incorporated
Description: CLOCK GENERATOR TSSOP-16 T&R 2.5
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+2.95 EUR
Mindestbestellmenge: 2500
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PI6LC48P0101LIEX PI6LC48L0201.pdf
PI6LC48P0101LIEX
Hersteller: Diodes Incorporated
Description: HIFLEX 10GBE CLOCK GENERATOR
Produkt ist nicht verfügbar
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PI6LC48C21LIEX PI6LC48C21.pdf
PI6LC48C21LIEX
Hersteller: Diodes Incorporated
Description: 125MHZ CMOS SYNTHESIZER
Produkt ist nicht verfügbar
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PI6LC48P25104LEX PI6LC48P25104.pdf
PI6LC48P25104LEX
Hersteller: Diodes Incorporated
Description: 156.25MHZ LVPECL SYNTHESIZER
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVPECL
Frequency - Max: 187.5MHz
Input: Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.465V
Main Purpose: Ethernet
Ratio - Input:Output: 1:1
Differential - Input:Output: No/Yes
Supplier Device Package: 8-TSSOP
PLL: Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+3.76 EUR
Mindestbestellmenge: 2500
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PI6LC48P25104LIEX PI6LC48P25104.pdf
PI6LC48P25104LIEX
Hersteller: Diodes Incorporated
Description: 156.25MHZ LVPECL SYNTHESIZER
auf Bestellung 2500 Stücke:
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Anzahl Preis
2500+4.82 EUR
Mindestbestellmenge: 2500
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PI6LC48C21LEX PI6LC48C21.pdf
PI6LC48C21LEX
Hersteller: Diodes Incorporated
Description: 125MHZ CMOS SYNTHESIZER
Produkt ist nicht verfügbar
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PI6LC48P03AZHIE PI6LC48P03A.pdf
PI6LC48P03AZHIE
Hersteller: Diodes Incorporated
Description: 3-OUTPUT LVPECL NETWORKING CLOCK
Produkt ist nicht verfügbar
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D3V3H1U2LP-7B D3V3H1U2LP.pdf
D3V3H1U2LP-7B
Hersteller: Diodes Incorporated
Description: TVS DIODE 3.3VWM 10VC X1DFN10062
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 280pF @ 1MHz
Current - Peak Pulse (10/1000µs): 35A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: X1-DFN1006-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 10V
Power - Peak Pulse: 350W
Power Line Protection: No
auf Bestellung 250000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.11 EUR
20000+0.098 EUR
Mindestbestellmenge: 10000
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D3V3H1U2LP-7B D3V3H1U2LP.pdf
D3V3H1U2LP-7B
Hersteller: Diodes Incorporated
Description: TVS DIODE 3.3VWM 10VC X1DFN10062
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 280pF @ 1MHz
Current - Peak Pulse (10/1000µs): 35A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: X1-DFN1006-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 10V
Power - Peak Pulse: 350W
Power Line Protection: No
auf Bestellung 253187 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
36+0.49 EUR
55+0.33 EUR
124+0.14 EUR
1000+0.13 EUR
5000+0.12 EUR
Mindestbestellmenge: 36
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LSP78L05AATB
LSP78L05AATB
Hersteller: Diodes Incorporated
Description: IC REGULATOR
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 5.5 mA
Voltage - Input (Max): 20V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
PSRR: 62dB (120Hz)
Voltage Dropout (Max): 1.8V @ 100mA
Protection Features: Over Temperature, Short Circuit
Produkt ist nicht verfügbar
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P6SMAJ33ADFQ-13 P6SMAJ5.0ADFQ_P6SMAJ85ADFQ.pdf
P6SMAJ33ADFQ-13
Hersteller: Diodes Incorporated
Description: TVS DIODE 33VWM 53.3VC DFLAT
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 11.3A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: D-Flat
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FS2MED-7 FS2MED.pdf
FS2MED-7
Hersteller: Diodes Incorporated
Description: DIODE GEN PURP 1KV 2A DO219AA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1 µs
Technology: Standard
Capacitance @ Vr, F: 12.3pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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FS2MED-7 FS2MED.pdf
FS2MED-7
Hersteller: Diodes Incorporated
Description: DIODE GEN PURP 1KV 2A DO219AA
Packaging: Cut Tape (CT)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1 µs
Technology: Standard
Capacitance @ Vr, F: 12.3pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 2080 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
27+0.67 EUR
37+0.48 EUR
100+0.24 EUR
500+0.21 EUR
1000+0.17 EUR
Mindestbestellmenge: 27
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ZXMN10A11KTC ZXMN10A11K.pdf
ZXMN10A11KTC
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 2.4A TO252-2
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 2.6A, 10V
Power Dissipation (Max): 2.11W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 274 pF @ 50 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.51 EUR
Mindestbestellmenge: 12
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ZXMN10A11K ZXMN10A11K.pdf
ZXMN10A11K
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 2.4A TO252-3
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ZXMN10A11K ZXMN10A11K.pdf
ZXMN10A11K
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 2.4A TO252-3
Produkt ist nicht verfügbar
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ZXMN10A08E6QTA
ZXMN10A08E6QTA
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V SOT26 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 3.2A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 50 V
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DDZX9V1CQ-7
DDZX9V1CQ-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 9.1V 300MW SOT23
Produkt ist nicht verfügbar
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SBR1045SP5-7D
SBR1045SP5-7D
Hersteller: Diodes Incorporated
Description: DIODE SBR 45V 10A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Capacitance @ Vr, F: 500pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 450 µA @ 45 V
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BZX84C7V5Q-13-F ds18001.pdf
BZX84C7V5Q-13-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 7.5V 300MW SOT23
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Qualification: AEC-Q101
auf Bestellung 50000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.045 EUR
20000+0.041 EUR
30000+0.038 EUR
50000+0.036 EUR
Mindestbestellmenge: 10000
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