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SMCJ11CAQ-13-F SMCJ11CAQ-13-F Diodes Incorporated SMCJ5.0CAQ_SMCJ110CAQ.pdf Description: TRANSIENT VOLTAGE SUPPRESSOR SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 82.4A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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SMAJ48CAQ-13-F SMAJ48CAQ-13-F Diodes Incorporated SMAJ5.0CAQ-SMAJ200CAQ.pdf Description: TRANSIENT VOLTAGE SUPPRESSOR SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 5.2A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: SMA
Bidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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ADTC114ECAQ-13 ADTC114ECAQ-13 Diodes Incorporated ADTC114ECAQ.pdf Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 310 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
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DDTC114ECAQ-13-F DDTC114ECAQ-13-F Diodes Incorporated ds30329.pdf Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
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DDTC114ECAQ-7-F DDTC114ECAQ-7-F Diodes Incorporated ds30329.pdf Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
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MURS320 MURS320 Diodes Incorporated ds30197.pdf Description: DIODE GEN PURP 200V 3A SMC TR 3K
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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SBR20A100CTFP-JT SBR20A100CTFP-JT Diodes Incorporated Description: DIODE ARRAY SBR 100V ITO-220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Produkt ist nicht verfügbar
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SBR20A100CT-E1 Diodes Incorporated Description: DIODE ARRAY SBR 100V 10A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Produkt ist nicht verfügbar
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DCX114YUQ-7-F DCX114YUQ-7-F Diodes Incorporated DCX_XXXX_U.pdf Description: PREBIAS TRANSISTOR SOT363 T&R 3K
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
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DMN2450UFB4Q-7B DMN2450UFB4Q-7B Diodes Incorporated DMN2450UFB4Q.pdf Description: MOSFET BVDSS: 8V~24V X2-DFN1006-
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: X2-DFN1006-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 16 V
Qualification: AEC-Q101
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DMN2029UVT-7 DMN2029UVT-7 Diodes Incorporated DMN2029UVT.pdf Description: MOSFET N-CH 6.8A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.2A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 10 V
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DMN2029UVT-13 DMN2029UVT-13 Diodes Incorporated DMN2029UVT.pdf Description: MOSFET N-CH 6.8A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.2A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 10 V
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PT8A3281WEX PT8A3281WEX Diodes Incorporated PT8A3280-PT8A3287.pdf Description: HEATER CONTROLLER SO-8
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PT8A3281WE PT8A3281WE Diodes Incorporated PT8A3280-PT8A3287.pdf Description: HEATER CONTROLLER SO-8
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PT8A3281PEX PT8A3281PEX Diodes Incorporated PT8A3280-PT8A3287.pdf Description: HEATER CONTROLLER DIP-8
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PT8A3281PE PT8A3281PE Diodes Incorporated PT8A3280-PT8A3287.pdf Description: HEATER CONTROLLER DIP-8
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DMN2710UTQ-7 DMN2710UTQ-7 Diodes Incorporated DMN2710UTQ.pdf Description: MOSFET BVDSS: 8V~24V SOT523 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 870mA (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 16 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 216000 Stücke:
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DMN2710UTQ-7 DMN2710UTQ-7 Diodes Incorporated DMN2710UTQ.pdf Description: MOSFET BVDSS: 8V~24V SOT523 T&R
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 870mA (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 16 V
Qualification: AEC-Q101
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DMN2710UTQ-13 DMN2710UTQ-13 Diodes Incorporated DMN2710UTQ.pdf Description: MOSFET BVDSS: 8V~24V SOT523 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 870mA (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 16 V
Qualification: AEC-Q101
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DMN2710UWQ-13 DMN2710UWQ-13 Diodes Incorporated DMN2710UWQ.pdf Description: MOSFET BVDSS: 8V~24V SOT323 T&R
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
Power Dissipation (Max): 470mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 16 V
Qualification: AEC-Q101
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DMN2710UW-7 DMN2710UW-7 Diodes Incorporated DMN2710UW.pdf Description: MOSFET BVDSS: 8V~24V SOT323 T&R
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
Power Dissipation (Max): 470mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 16 V
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DMN2710UWQ-7 DMN2710UWQ-7 Diodes Incorporated DMN2710UWQ.pdf Description: MOSFET BVDSS: 8V~24V SOT323 T&R
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
Power Dissipation (Max): 470mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 16 V
Qualification: AEC-Q101
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DMN2710UW-13 DMN2710UW-13 Diodes Incorporated DMN2710UW.pdf Description: MOSFET BVDSS: 8V~24V SOT323 T&R
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
Power Dissipation (Max): 470mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 16 V
auf Bestellung 150000 Stücke:
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20000+0.06 EUR
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50000+0.05 EUR
70000+0.05 EUR
100000+0.05 EUR
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DMN2710UT-7 DMN2710UT-7 Diodes Incorporated DMN2710UT.pdf Description: MOSFET BVDSS: 8V~24V SOT523 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 870mA (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 16 V
Produkt ist nicht verfügbar
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DMN2710UDW-7 DMN2710UDW-7 Diodes Incorporated DMN2710UDW.pdf Description: MOSFET 2N-CH 20V 0.8A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 360mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
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DMN2710UDW-13 DMN2710UDW-13 Diodes Incorporated DMN2710UDW.pdf Description: MOSFET 2N-CH 20V 0.8A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 360mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
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DMN2710UDWQ-13 DMN2710UDWQ-13 Diodes Incorporated DMN2710UDWQ.pdf Description: MOSFET 2N-CH 20V 0.8A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 360mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
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DMN2710UDWQ-7 DMN2710UDWQ-7 Diodes Incorporated DMN2710UDWQ.pdf Description: MOSFET 2N-CH 20V 0.8A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 360mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
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74LVC1G06FZ4-7 74LVC1G06FZ4-7 Diodes Incorporated 74LVC1G06.pdf Description: IC INVERTER 1CH 1-INP DFN1410-6
Features: Open Drain
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Number of Inputs: 1
Supplier Device Package: X2-DFN1410-6
Input Logic Level - High: 1.07V ~ 3.85V
Input Logic Level - Low: 0.58V ~ 1.65V
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 200 µA
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PI3HDX1204DZHEX PI3HDX1204DZHEX Diodes Incorporated PI3HDX1204D-Product-Brief.pdf Description: ACTIVE HDMI V-QFN3590-42 T&R 3.5
Packaging: Tape & Reel (TR)
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: HDMI
Voltage - Supply: 3V ~ 3.6V
Applications: Desktop, HDMI Redriver, Laptops, Set-Top Boxes
Supplier Device Package: 42-TQFN (9x3.5)
Part Status: Active
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PI3HDX1204DZHEX PI3HDX1204DZHEX Diodes Incorporated PI3HDX1204D-Product-Brief.pdf Description: ACTIVE HDMI V-QFN3590-42 T&R 3.5
Packaging: Cut Tape (CT)
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: HDMI
Voltage - Supply: 3V ~ 3.6V
Applications: Desktop, HDMI Redriver, Laptops, Set-Top Boxes
Supplier Device Package: 42-TQFN (9x3.5)
Part Status: Active
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PI3HDX1204CZHEX PI3HDX1204CZHEX Diodes Incorporated PI3HDX1204C-Product-Brief.pdf Description: ACTIVE HDMI V-QFN3590-42 T&R 3.5
Packaging: Tape & Reel (TR)
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: HDMI
Voltage - Supply: 3V ~ 3.6V
Applications: Desktop, HDMI Redriver, Laptops, Level Shifter, Set-Top Boxes
Supplier Device Package: 42-TQFN (9x3.5)
Part Status: Active
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PI3HDX1204CZHEX PI3HDX1204CZHEX Diodes Incorporated PI3HDX1204C-Product-Brief.pdf Description: ACTIVE HDMI V-QFN3590-42 T&R 3.5
Packaging: Cut Tape (CT)
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: HDMI
Voltage - Supply: 3V ~ 3.6V
Applications: Desktop, HDMI Redriver, Laptops, Level Shifter, Set-Top Boxes
Supplier Device Package: 42-TQFN (9x3.5)
Part Status: Active
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P4SMAJ48ADF-13 P4SMAJ48ADF-13 Diodes Incorporated P4SMAJ5.0ADF-P4SMAJ85ADF.pdf Description: TRANSIENT VOLTAGE SUPPRESSOR D-F
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.2A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: D-Flat
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 400W
Power Line Protection: No
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P6SMAJ48ADFQ-13 P6SMAJ48ADFQ-13 Diodes Incorporated P6SMAJ5.0ADFQ_P6SMAJ85ADFQ.pdf Description: TRANSIENT VOLTAGE SUPPRESSOR D-F
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 7.7A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: D-Flat
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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PT7C4372ALEX PT7C4372ALEX Diodes Incorporated PT7C4372AC.pdf Description: IC RTC CLK/CALENDAR I2C 8TSSOP
Features: Alarm, Leap Year
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Interface: I2C, 2-Wire Serial
Type: Clock/Calendar
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 6V
Time Format: HH:MM:SS (12/24 hr)
Date Format: YY-MM-DD-dd
Supplier Device Package: 8-TSSOP
Current - Timekeeping (Max): 0.8µA @ 3V
DigiKey Programmable: Not Verified
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PT7C4372ALEX PT7C4372ALEX Diodes Incorporated PT7C4372AC.pdf Description: IC RTC CLK/CALENDAR I2C 8TSSOP
Features: Alarm, Leap Year
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Interface: I2C, 2-Wire Serial
Type: Clock/Calendar
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 6V
Time Format: HH:MM:SS (12/24 hr)
Date Format: YY-MM-DD-dd
Supplier Device Package: 8-TSSOP
Current - Timekeeping (Max): 0.8µA @ 3V
DigiKey Programmable: Not Verified
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PAM8823T24E-13 Diodes Incorporated Description: AUDIO LOW VOLT TSSOP-24EP T&R 2.
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.173", 4.40mm Width) Exposed Pad
Output Type: 1-Channel (Mono) or 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class D
Voltage - Supply: 4.5V ~ 26V
Max Output Power x Channels @ Load: 25W x 2 @ 8Ohm; 50W x 1 @ 4Ohm
Supplier Device Package: 24-TSSOP-EP (Type A1)
Part Status: Active
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AZ1117T-2.85E1 Diodes Incorporated Description: IC REG LINEAR 2.85V 1A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 2.85V
Part Status: Obsolete
PSRR: 75dB (120Hz)
Voltage Dropout (Max): 1.25V @ 1A
Protection Features: Over Temperature
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AZ1117T-1.8E1 Diodes Incorporated Description: IC REG LINEAR 1.8V 1A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 1.8V
Part Status: Obsolete
PSRR: 75dB (120Hz)
Voltage Dropout (Max): 1.25V @ 1A
Protection Features: Over Temperature
Produkt ist nicht verfügbar
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AZ1117S-5.0E1 AZ1117S-5.0E1 Diodes Incorporated AZ1117_Rev5.3_Jan2019_DS.pdf Description: IC REG LINEAR 5V 1.25A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1.25A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: TO-263
Voltage - Output (Min/Fixed): 5V
PSRR: 75dB (120Hz)
Voltage Dropout (Max): 1.25V @ 1A
Protection Features: Thermal Shutdown
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DMTH6010SCT DMTH6010SCT Diodes Incorporated DMTH6010SCT.pdf Description: MOSFET N-CH 60V 100A TO220-3
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DMT6006LK3-13 DMT6006LK3-13 Diodes Incorporated DMT6006LK3.pdf Description: MOSFET BVDSS: 41V~60V TO252 T&R
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DMTH6006LPSWQ-13 DMTH6006LPSWQ-13 Diodes Incorporated DMTH6006LPSWQ.pdf Description: MOSFET N-CH 60V 17.2A/100A PWRDI
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.88W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type Q)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2162 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
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DMT3002LPS-13 DMT3002LPS-13 Diodes Incorporated DMT3002LPS.pdf Description: MOSFET N-CH 30V 100A PWRDI5060-8
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DMT32M5LPSW-13 DMT32M5LPSW-13 Diodes Incorporated DMT32M5LPSW.pdf Description: MOSFET BVDSS: 25V~30V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Power Dissipation (Max): 3.2W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: PowerDI5060-8 (Type UX)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4389 pF @ 15 V
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DMT32M4LPSW-13 DMT32M4LPSW-13 Diodes Incorporated DMT32M4LPSW.pdf Description: MOSFET BVDSS: 25V~30V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3944 pF @ 15 V
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DMT3006LPB-13 Diodes Incorporated DMT3006LPB.pdf Description: MOSFET BVDSS: 25V-30V POWERDI506
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PI3CH3244LEX PI3CH3244LEX Diodes Incorporated PI3CH3244.pdf Description: IC SWITCH SPST 8 OHM 20TSSOP
Features: Differential Compatibility
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 8Ohm
-3db Bandwidth: 500MHz
Supplier Device Package: 20-TSSOP
Voltage - Supply, Single (V+): 3.3V
Switch Circuit: SPST
Multiplexer/Demultiplexer Circuit: 1:1
Part Status: Active
Number of Channels: 8
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PI3CH3244LEX PI3CH3244LEX Diodes Incorporated PI3CH3244.pdf Description: IC SWITCH SPST 8 OHM 20TSSOP
Features: Differential Compatibility
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 8Ohm
-3db Bandwidth: 500MHz
Supplier Device Package: 20-TSSOP
Voltage - Supply, Single (V+): 3.3V
Switch Circuit: SPST
Multiplexer/Demultiplexer Circuit: 1:1
Part Status: Active
Number of Channels: 8
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DMP2012SN-7 DMP2012SN-7 Diodes Incorporated DMP2012SN.pdf Description: MOSFET P-CH 20V 700MA SC59-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 400mA, 4.5V
Power Dissipation (Max): 500mW
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SC-59-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 178.5 pF @ 10 V
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BAS116Q-7-F BAS116Q-7-F Diodes Incorporated ds30233.pdf Description: DIODE STANDARD 85V 215MA SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Qualification: AEC-Q101
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150000+0.04 EUR
300000+0.04 EUR
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BC856BQ-7-F BC856BQ-7-F Diodes Incorporated BC856AQ-BC857BQ.pdf Description: TRANS PNP 65V 0.1A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 310 mW
Qualification: AEC-Q101
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15000+0.04 EUR
21000+0.04 EUR
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75000+0.03 EUR
150000+0.03 EUR
300000+0.03 EUR
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SK12-13 SK12-13 Diodes Incorporated DS_31_SK12-SK16.pdf Description: DIODE SCHOTTKY 20V 1A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Produkt ist nicht verfügbar
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P4SMAJ45ADF-13 P4SMAJ45ADF-13 Diodes Incorporated P4SMAJ5.0ADF-P4SMAJ85ADF.pdf Description: TRANSIENT VOLTAGE SUPPRESSOR D-F
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.5A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: D-Flat
Unidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
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P6SMAJ45ADFQ-13 Diodes Incorporated P6SMAJ5.0ADFQ_P6SMAJ85ADFQ.pdf Description: TRANSIENT VOLTAGE SUPPRESSOR D-F
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 8.3A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: D-Flat
Unidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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BZT52C18SQ-7-F BZT52C18SQ-7-F Diodes Incorporated ds30093.pdf Description: DIODE ZENER 18V 200MW SOD323
Tolerance: ±6.39%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12.6 V
Qualification: AEC-Q101
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BZT52C18Q-7-F BZT52C18Q-7-F Diodes Incorporated ds18004.pdf Description: DIODE ZENER 18V 370MW SOD123
Tolerance: ±6.39%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Part Status: Active
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12.6 V
Qualification: AEC-Q101
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SBR30A120CTFP-G SBR30A120CTFP-G Diodes Incorporated SBR30A120.pdf Description: DIODE ARRAY SBR 120V 15A ITO220
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SBR30A120CT-E1 Diodes Incorporated Description: DIODE ARRAY SCHOTTKY
Produkt ist nicht verfügbar
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SMCJ11CAQ-13-F SMCJ5.0CAQ_SMCJ110CAQ.pdf
SMCJ11CAQ-13-F
Hersteller: Diodes Incorporated
Description: TRANSIENT VOLTAGE SUPPRESSOR SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 82.4A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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SMAJ48CAQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
SMAJ48CAQ-13-F
Hersteller: Diodes Incorporated
Description: TRANSIENT VOLTAGE SUPPRESSOR SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 5.2A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: SMA
Bidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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5000+0.15 EUR
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ADTC114ECAQ-13 ADTC114ECAQ.pdf
ADTC114ECAQ-13
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 310 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
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DDTC114ECAQ-13-F ds30329.pdf
DDTC114ECAQ-13-F
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
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DDTC114ECAQ-7-F ds30329.pdf
DDTC114ECAQ-7-F
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
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3000+0.07 EUR
6000+0.06 EUR
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75000+0.04 EUR
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MURS320 ds30197.pdf
MURS320
Hersteller: Diodes Incorporated
Description: DIODE GEN PURP 200V 3A SMC TR 3K
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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SBR20A100CTFP-JT
SBR20A100CTFP-JT
Hersteller: Diodes Incorporated
Description: DIODE ARRAY SBR 100V ITO-220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
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SBR20A100CT-E1
Hersteller: Diodes Incorporated
Description: DIODE ARRAY SBR 100V 10A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Produkt ist nicht verfügbar
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DCX114YUQ-7-F DCX_XXXX_U.pdf
DCX114YUQ-7-F
Hersteller: Diodes Incorporated
Description: PREBIAS TRANSISTOR SOT363 T&R 3K
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 762000 Stücke:
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Anzahl Preis
3000+0.12 EUR
6000+0.10 EUR
9000+0.10 EUR
15000+0.09 EUR
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75000+0.08 EUR
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DMN2450UFB4Q-7B DMN2450UFB4Q.pdf
DMN2450UFB4Q-7B
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V X2-DFN1006-
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: X2-DFN1006-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 16 V
Qualification: AEC-Q101
auf Bestellung 240000 Stücke:
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10000+0.08 EUR
20000+0.07 EUR
30000+0.07 EUR
50000+0.06 EUR
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100000+0.06 EUR
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DMN2029UVT-7 DMN2029UVT.pdf
DMN2029UVT-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 6.8A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.2A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 10 V
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3000+0.17 EUR
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DMN2029UVT-13 DMN2029UVT.pdf
DMN2029UVT-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 6.8A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.2A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 10 V
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PT8A3281WEX PT8A3280-PT8A3287.pdf
PT8A3281WEX
Hersteller: Diodes Incorporated
Description: HEATER CONTROLLER SO-8
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PT8A3281WE PT8A3280-PT8A3287.pdf
PT8A3281WE
Hersteller: Diodes Incorporated
Description: HEATER CONTROLLER SO-8
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PT8A3281PEX PT8A3280-PT8A3287.pdf
PT8A3281PEX
Hersteller: Diodes Incorporated
Description: HEATER CONTROLLER DIP-8
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PT8A3281PE PT8A3280-PT8A3287.pdf
PT8A3281PE
Hersteller: Diodes Incorporated
Description: HEATER CONTROLLER DIP-8
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DMN2710UTQ-7 DMN2710UTQ.pdf
DMN2710UTQ-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V SOT523 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 870mA (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 16 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 216000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.12 EUR
6000+0.11 EUR
9000+0.10 EUR
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DMN2710UTQ-7 DMN2710UTQ.pdf
DMN2710UTQ-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V SOT523 T&R
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 870mA (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 16 V
Qualification: AEC-Q101
auf Bestellung 216887 Stücke:
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Anzahl Preis
32+0.56 EUR
51+0.35 EUR
120+0.15 EUR
500+0.14 EUR
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DMN2710UTQ-13 DMN2710UTQ.pdf
DMN2710UTQ-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V SOT523 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 870mA (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 16 V
Qualification: AEC-Q101
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DMN2710UWQ-13 DMN2710UWQ.pdf
DMN2710UWQ-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V SOT323 T&R
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
Power Dissipation (Max): 470mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 16 V
Qualification: AEC-Q101
auf Bestellung 150000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.07 EUR
20000+0.06 EUR
30000+0.06 EUR
50000+0.06 EUR
70000+0.06 EUR
100000+0.05 EUR
Mindestbestellmenge: 10000
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DMN2710UW-7 DMN2710UW.pdf
DMN2710UW-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V SOT323 T&R
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
Power Dissipation (Max): 470mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 16 V
auf Bestellung 141000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.06 EUR
6000+0.06 EUR
9000+0.06 EUR
15000+0.06 EUR
30000+0.05 EUR
75000+0.05 EUR
Mindestbestellmenge: 3000
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DMN2710UWQ-7 DMN2710UWQ.pdf
DMN2710UWQ-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V SOT323 T&R
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
Power Dissipation (Max): 470mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 16 V
Qualification: AEC-Q101
auf Bestellung 120000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.07 EUR
6000+0.06 EUR
9000+0.05 EUR
15000+0.05 EUR
30000+0.05 EUR
Mindestbestellmenge: 3000
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DMN2710UW-13 DMN2710UW.pdf
DMN2710UW-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V SOT323 T&R
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
Power Dissipation (Max): 470mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 16 V
auf Bestellung 150000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.06 EUR
20000+0.06 EUR
30000+0.05 EUR
50000+0.05 EUR
70000+0.05 EUR
100000+0.05 EUR
Mindestbestellmenge: 10000
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DMN2710UT-7 DMN2710UT.pdf
DMN2710UT-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V SOT523 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 870mA (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 16 V
Produkt ist nicht verfügbar
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DMN2710UDW-7 DMN2710UDW.pdf
DMN2710UDW-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 0.8A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 360mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.09 EUR
6000+0.09 EUR
9000+0.09 EUR
15000+0.08 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
DMN2710UDW-13 DMN2710UDW.pdf
DMN2710UDW-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 0.8A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 360mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Produkt ist nicht verfügbar
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DMN2710UDWQ-13 DMN2710UDWQ.pdf
DMN2710UDWQ-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 0.8A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 360mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMN2710UDWQ-7 DMN2710UDWQ.pdf
DMN2710UDWQ-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 0.8A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 360mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 117000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.11 EUR
6000+0.10 EUR
9000+0.10 EUR
15000+0.09 EUR
21000+0.09 EUR
30000+0.08 EUR
75000+0.07 EUR
Mindestbestellmenge: 3000
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74LVC1G06FZ4-7 74LVC1G06.pdf
74LVC1G06FZ4-7
Hersteller: Diodes Incorporated
Description: IC INVERTER 1CH 1-INP DFN1410-6
Features: Open Drain
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Number of Inputs: 1
Supplier Device Package: X2-DFN1410-6
Input Logic Level - High: 1.07V ~ 3.85V
Input Logic Level - Low: 0.58V ~ 1.65V
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 200 µA
auf Bestellung 80000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.15 EUR
10000+0.14 EUR
15000+0.13 EUR
25000+0.12 EUR
50000+0.11 EUR
Mindestbestellmenge: 5000
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PI3HDX1204DZHEX PI3HDX1204D-Product-Brief.pdf
PI3HDX1204DZHEX
Hersteller: Diodes Incorporated
Description: ACTIVE HDMI V-QFN3590-42 T&R 3.5
Packaging: Tape & Reel (TR)
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: HDMI
Voltage - Supply: 3V ~ 3.6V
Applications: Desktop, HDMI Redriver, Laptops, Set-Top Boxes
Supplier Device Package: 42-TQFN (9x3.5)
Part Status: Active
Produkt ist nicht verfügbar
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PI3HDX1204DZHEX PI3HDX1204D-Product-Brief.pdf
PI3HDX1204DZHEX
Hersteller: Diodes Incorporated
Description: ACTIVE HDMI V-QFN3590-42 T&R 3.5
Packaging: Cut Tape (CT)
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: HDMI
Voltage - Supply: 3V ~ 3.6V
Applications: Desktop, HDMI Redriver, Laptops, Set-Top Boxes
Supplier Device Package: 42-TQFN (9x3.5)
Part Status: Active
auf Bestellung 1297 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.17 EUR
10+3.29 EUR
25+2.79 EUR
100+2.23 EUR
250+1.96 EUR
500+1.79 EUR
1000+1.65 EUR
Mindestbestellmenge: 4
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PI3HDX1204CZHEX PI3HDX1204C-Product-Brief.pdf
PI3HDX1204CZHEX
Hersteller: Diodes Incorporated
Description: ACTIVE HDMI V-QFN3590-42 T&R 3.5
Packaging: Tape & Reel (TR)
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: HDMI
Voltage - Supply: 3V ~ 3.6V
Applications: Desktop, HDMI Redriver, Laptops, Level Shifter, Set-Top Boxes
Supplier Device Package: 42-TQFN (9x3.5)
Part Status: Active
Produkt ist nicht verfügbar
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PI3HDX1204CZHEX PI3HDX1204C-Product-Brief.pdf
PI3HDX1204CZHEX
Hersteller: Diodes Incorporated
Description: ACTIVE HDMI V-QFN3590-42 T&R 3.5
Packaging: Cut Tape (CT)
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: HDMI
Voltage - Supply: 3V ~ 3.6V
Applications: Desktop, HDMI Redriver, Laptops, Level Shifter, Set-Top Boxes
Supplier Device Package: 42-TQFN (9x3.5)
Part Status: Active
auf Bestellung 2346 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.75 EUR
10+3.02 EUR
25+2.56 EUR
100+2.05 EUR
250+1.80 EUR
500+1.64 EUR
1000+1.52 EUR
Mindestbestellmenge: 4
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P4SMAJ48ADF-13 P4SMAJ5.0ADF-P4SMAJ85ADF.pdf
P4SMAJ48ADF-13
Hersteller: Diodes Incorporated
Description: TRANSIENT VOLTAGE SUPPRESSOR D-F
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.2A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: D-Flat
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
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P6SMAJ48ADFQ-13 P6SMAJ5.0ADFQ_P6SMAJ85ADFQ.pdf
P6SMAJ48ADFQ-13
Hersteller: Diodes Incorporated
Description: TRANSIENT VOLTAGE SUPPRESSOR D-F
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 7.7A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: D-Flat
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PT7C4372ALEX PT7C4372AC.pdf
PT7C4372ALEX
Hersteller: Diodes Incorporated
Description: IC RTC CLK/CALENDAR I2C 8TSSOP
Features: Alarm, Leap Year
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Interface: I2C, 2-Wire Serial
Type: Clock/Calendar
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 6V
Time Format: HH:MM:SS (12/24 hr)
Date Format: YY-MM-DD-dd
Supplier Device Package: 8-TSSOP
Current - Timekeeping (Max): 0.8µA @ 3V
DigiKey Programmable: Not Verified
auf Bestellung 25000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.72 EUR
5000+0.69 EUR
12500+0.66 EUR
25000+0.64 EUR
Mindestbestellmenge: 2500
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PT7C4372ALEX PT7C4372AC.pdf
PT7C4372ALEX
Hersteller: Diodes Incorporated
Description: IC RTC CLK/CALENDAR I2C 8TSSOP
Features: Alarm, Leap Year
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Interface: I2C, 2-Wire Serial
Type: Clock/Calendar
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 6V
Time Format: HH:MM:SS (12/24 hr)
Date Format: YY-MM-DD-dd
Supplier Device Package: 8-TSSOP
Current - Timekeeping (Max): 0.8µA @ 3V
DigiKey Programmable: Not Verified
auf Bestellung 26980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.71 EUR
12+1.53 EUR
25+1.45 EUR
100+1.19 EUR
250+1.11 EUR
500+0.98 EUR
1000+0.78 EUR
Mindestbestellmenge: 11
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PAM8823T24E-13
Hersteller: Diodes Incorporated
Description: AUDIO LOW VOLT TSSOP-24EP T&R 2.
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.173", 4.40mm Width) Exposed Pad
Output Type: 1-Channel (Mono) or 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class D
Voltage - Supply: 4.5V ~ 26V
Max Output Power x Channels @ Load: 25W x 2 @ 8Ohm; 50W x 1 @ 4Ohm
Supplier Device Package: 24-TSSOP-EP (Type A1)
Part Status: Active
Produkt ist nicht verfügbar
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AZ1117T-2.85E1
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 2.85V 1A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 2.85V
Part Status: Obsolete
PSRR: 75dB (120Hz)
Voltage Dropout (Max): 1.25V @ 1A
Protection Features: Over Temperature
Produkt ist nicht verfügbar
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AZ1117T-1.8E1
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 1.8V 1A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 1.8V
Part Status: Obsolete
PSRR: 75dB (120Hz)
Voltage Dropout (Max): 1.25V @ 1A
Protection Features: Over Temperature
Produkt ist nicht verfügbar
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AZ1117S-5.0E1 AZ1117_Rev5.3_Jan2019_DS.pdf
AZ1117S-5.0E1
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 5V 1.25A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1.25A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: TO-263
Voltage - Output (Min/Fixed): 5V
PSRR: 75dB (120Hz)
Voltage Dropout (Max): 1.25V @ 1A
Protection Features: Thermal Shutdown
Produkt ist nicht verfügbar
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DMTH6010SCT DMTH6010SCT.pdf
DMTH6010SCT
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 100A TO220-3
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
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DMT6006LK3-13 DMT6006LK3.pdf
DMT6006LK3-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V TO252 T&R
Produkt ist nicht verfügbar
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DMTH6006LPSWQ-13 DMTH6006LPSWQ.pdf
DMTH6006LPSWQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 17.2A/100A PWRDI
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.88W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type Q)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2162 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.72 EUR
5000+0.69 EUR
Mindestbestellmenge: 2500
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DMT3002LPS-13 DMT3002LPS.pdf
DMT3002LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 100A PWRDI5060-8
Produkt ist nicht verfügbar
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DMT32M5LPSW-13 DMT32M5LPSW.pdf
DMT32M5LPSW-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Power Dissipation (Max): 3.2W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: PowerDI5060-8 (Type UX)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4389 pF @ 15 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.74 EUR
Mindestbestellmenge: 2500
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DMT32M4LPSW-13 DMT32M4LPSW.pdf
DMT32M4LPSW-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3944 pF @ 15 V
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DMT3006LPB-13 DMT3006LPB.pdf
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V-30V POWERDI506
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Anzahl Preis
2500+0.45 EUR
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PI3CH3244LEX PI3CH3244.pdf
PI3CH3244LEX
Hersteller: Diodes Incorporated
Description: IC SWITCH SPST 8 OHM 20TSSOP
Features: Differential Compatibility
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 8Ohm
-3db Bandwidth: 500MHz
Supplier Device Package: 20-TSSOP
Voltage - Supply, Single (V+): 3.3V
Switch Circuit: SPST
Multiplexer/Demultiplexer Circuit: 1:1
Part Status: Active
Number of Channels: 8
auf Bestellung 33000 Stücke:
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Anzahl Preis
3000+0.67 EUR
6000+0.62 EUR
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PI3CH3244LEX PI3CH3244.pdf
PI3CH3244LEX
Hersteller: Diodes Incorporated
Description: IC SWITCH SPST 8 OHM 20TSSOP
Features: Differential Compatibility
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 8Ohm
-3db Bandwidth: 500MHz
Supplier Device Package: 20-TSSOP
Voltage - Supply, Single (V+): 3.3V
Switch Circuit: SPST
Multiplexer/Demultiplexer Circuit: 1:1
Part Status: Active
Number of Channels: 8
auf Bestellung 34279 Stücke:
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7+2.69 EUR
11+1.66 EUR
25+1.39 EUR
100+1.09 EUR
250+0.94 EUR
500+0.85 EUR
1000+0.77 EUR
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DMP2012SN-7 DMP2012SN.pdf
DMP2012SN-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 700MA SC59-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 400mA, 4.5V
Power Dissipation (Max): 500mW
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SC-59-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 178.5 pF @ 10 V
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Anzahl Preis
3000+0.18 EUR
6000+0.17 EUR
9000+0.15 EUR
75000+0.14 EUR
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BAS116Q-7-F ds30233.pdf
BAS116Q-7-F
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 85V 215MA SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Qualification: AEC-Q101
auf Bestellung 450000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.06 EUR
6000+0.05 EUR
15000+0.05 EUR
30000+0.05 EUR
75000+0.05 EUR
150000+0.04 EUR
300000+0.04 EUR
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BC856BQ-7-F BC856AQ-BC857BQ.pdf
BC856BQ-7-F
Hersteller: Diodes Incorporated
Description: TRANS PNP 65V 0.1A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 310 mW
Qualification: AEC-Q101
auf Bestellung 1800000 Stücke:
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Anzahl Preis
3000+0.05 EUR
6000+0.04 EUR
9000+0.04 EUR
15000+0.04 EUR
21000+0.04 EUR
30000+0.03 EUR
75000+0.03 EUR
150000+0.03 EUR
300000+0.03 EUR
Mindestbestellmenge: 3000
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SK12-13 DS_31_SK12-SK16.pdf
SK12-13
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 20V 1A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Produkt ist nicht verfügbar
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P4SMAJ45ADF-13 P4SMAJ5.0ADF-P4SMAJ85ADF.pdf
P4SMAJ45ADF-13
Hersteller: Diodes Incorporated
Description: TRANSIENT VOLTAGE SUPPRESSOR D-F
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.5A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: D-Flat
Unidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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P6SMAJ45ADFQ-13 P6SMAJ5.0ADFQ_P6SMAJ85ADFQ.pdf
Hersteller: Diodes Incorporated
Description: TRANSIENT VOLTAGE SUPPRESSOR D-F
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 8.3A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: D-Flat
Unidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZT52C18SQ-7-F ds30093.pdf
BZT52C18SQ-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 18V 200MW SOD323
Tolerance: ±6.39%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12.6 V
Qualification: AEC-Q101
auf Bestellung 1611000 Stücke:
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3000+0.04 EUR
6000+0.04 EUR
9000+0.03 EUR
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BZT52C18Q-7-F ds18004.pdf
BZT52C18Q-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 18V 370MW SOD123
Tolerance: ±6.39%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Part Status: Active
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12.6 V
Qualification: AEC-Q101
auf Bestellung 690000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.05 EUR
6000+0.04 EUR
9000+0.04 EUR
15000+0.04 EUR
Mindestbestellmenge: 3000
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SBR30A120CTFP-G SBR30A120.pdf
SBR30A120CTFP-G
Hersteller: Diodes Incorporated
Description: DIODE ARRAY SBR 120V 15A ITO220
Produkt ist nicht verfügbar
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SBR30A120CT-E1
Hersteller: Diodes Incorporated
Description: DIODE ARRAY SCHOTTKY
Produkt ist nicht verfügbar
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