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DMTH48M3SFVW-7 DMTH48M3SFVW-7 Diodes Incorporated DMTH48M3SFVW.pdf Description: MOSFET BVDSS: 31V~40V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta), 52.4A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.82W (Ta), 36.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+0.35 EUR
6000+0.34 EUR
Mindestbestellmenge: 2000
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DMTH48M3SFVWQ-7 DMTH48M3SFVWQ-7 Diodes Incorporated DMTH48M3SFVWQ.pdf Description: MOSFET BVDSS: 31V~40V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta), 52.4A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.82W (Ta), 36.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMTH48M3SFVWQ-13 DMTH48M3SFVWQ-13 Diodes Incorporated DMTH48M3SFVWQ.pdf Description: MOSFET BVDSS: 31V~40V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta), 52.4A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.82W (Ta), 36.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PI3CH3345ZHEX PI3CH3345ZHEX Diodes Incorporated PI3CH3345.pdf Description: IC BUS SWITCH 8 X 1:1 20-TQFN
Packaging: Tape & Reel (TR)
Package / Case: 20-WFQFN Exposed Pad
Mounting Type: Surface Mount
Circuit: 8 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.97V ~ 3.63V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 20-TQFN (4.5x3.5)
auf Bestellung 10500 Stücke:
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3500+1.41 EUR
7000+1.38 EUR
10500+1.37 EUR
Mindestbestellmenge: 3500
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PI3CH3345ZHEX PI3CH3345ZHEX Diodes Incorporated PI3CH3345.pdf Description: IC BUS SWITCH 8 X 1:1 20-TQFN
Packaging: Cut Tape (CT)
Package / Case: 20-WFQFN Exposed Pad
Mounting Type: Surface Mount
Circuit: 8 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.97V ~ 3.63V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 20-TQFN (4.5x3.5)
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7+2.82 EUR
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SMAJ200CA-13-F SMAJ200CA-13-F Diodes Incorporated SMAJ5.0CA-SMAJ200CA.pdf Description: TVS DIODE 200VWM 324VC SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.2A
Voltage - Reverse Standoff (Typ): 200V
Supplier Device Package: SMA
Bidirectional Channels: 1
Voltage - Breakdown (Min): 224V
Voltage - Clamping (Max) @ Ipp: 324V
Power - Peak Pulse: 400W
Power Line Protection: No
auf Bestellung 125000 Stücke:
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5000+0.14 EUR
10000+0.12 EUR
25000+0.11 EUR
50000+0.1 EUR
Mindestbestellmenge: 5000
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SMAJ200CA-13-F SMAJ200CA-13-F Diodes Incorporated SMAJ5.0CA-SMAJ200CA.pdf Description: TVS DIODE 200VWM 324VC SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.2A
Voltage - Reverse Standoff (Typ): 200V
Supplier Device Package: SMA
Bidirectional Channels: 1
Voltage - Breakdown (Min): 224V
Voltage - Clamping (Max) @ Ipp: 324V
Power - Peak Pulse: 400W
Power Line Protection: No
auf Bestellung 129858 Stücke:
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25+0.7 EUR
38+0.47 EUR
100+0.22 EUR
500+0.21 EUR
1000+0.2 EUR
2000+0.16 EUR
Mindestbestellmenge: 25
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KBP304G KBP304G Diodes Incorporated KBP304G-KBP310G.pdf Description: BRIDGE RECT 1PHASE 400V 3A KBP
Packaging: Tube
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 184 Stücke:
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10+1.83 EUR
35+0.91 EUR
105+0.75 EUR
Mindestbestellmenge: 10
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DMT47M2SFVW-7 DMT47M2SFVW-7 Diodes Incorporated DMT47M2SFVW.pdf Description: MOSFET N-CH 40V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 49.1A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.67W (Ta), 27.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
auf Bestellung 112000 Stücke:
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2000+0.41 EUR
6000+0.38 EUR
10000+0.36 EUR
Mindestbestellmenge: 2000
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DMT47M2SFVW-7 DMT47M2SFVW-7 Diodes Incorporated DMT47M2SFVW.pdf Description: MOSFET N-CH 40V PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 49.1A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.67W (Ta), 27.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
auf Bestellung 112000 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.07 EUR
20+0.92 EUR
100+0.64 EUR
500+0.53 EUR
1000+0.45 EUR
Mindestbestellmenge: 17
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DMT47M2LDVQ-7 Diodes Incorporated DMT47M2LDVQ.pdf Description: MOSFET 2N-CH 40V 11.9A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.34W (Ta), 14.8W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta), 30.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 891pF @ 20V
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
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2000+0.76 EUR
Mindestbestellmenge: 2000
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DMT47M2LDVQ-7 Diodes Incorporated DMT47M2LDVQ.pdf Description: MOSFET 2N-CH 40V 11.9A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.34W (Ta), 14.8W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta), 30.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 891pF @ 20V
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.83 EUR
12+1.5 EUR
100+1.17 EUR
500+0.99 EUR
1000+0.81 EUR
Mindestbestellmenge: 10
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DMT47M2SFVWQ-7 DMT47M2SFVWQ-7 Diodes Incorporated DMT47M2SFVWQ.pdf Description: MOSFET N-CH 40V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 49.1A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.67W (Ta), 27.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMT47M2SFVWQ-7 DMT47M2SFVWQ-7 Diodes Incorporated DMT47M2SFVWQ.pdf Description: MOSFET N-CH 40V PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 49.1A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.67W (Ta), 27.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMT47M2SFVWQ-13 DMT47M2SFVWQ-13 Diodes Incorporated DMT47M2SFVWQ.pdf Description: MOSFET N-CH 40V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 49.1A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.67W (Ta), 27.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMT47M2LDV-13 Diodes Incorporated DMT47M2LDV.pdf Description: MOSFET 2N-CH 40V 11.9A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.34W (Ta), 14.8W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta), 30.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 891pF @ 20V
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
Produkt ist nicht verfügbar
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DMT47M2LDV-7 Diodes Incorporated DMT47M2LDV.pdf Description: MOSFET 2N-CH 40V 11.9A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.34W (Ta), 14.8W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta), 30.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 891pF @ 20V
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+0.61 EUR
Mindestbestellmenge: 2000
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3.0SMCJ18CA-13 3.0SMCJ18CA-13 Diodes Incorporated 3.0SMCJ5.0CA-3.0SMCJ170CA.pdf Description: TVS DIODE 18VWM 29.2VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 102.7A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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SBR20A300CTB-13 SBR20A300CTB-13 Diodes Incorporated SBR20A300.pdf Description: DIODE ARRAY SBR 300V 10A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 300 V
auf Bestellung 2400 Stücke:
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800+1.28 EUR
1600+1.23 EUR
Mindestbestellmenge: 800
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SBR20A300CTB-13 SBR20A300CTB-13 Diodes Incorporated SBR20A300.pdf Description: DIODE ARRAY SBR 300V 10A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 300 V
auf Bestellung 2407 Stücke:
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6+3.47 EUR
10+2.27 EUR
100+1.73 EUR
Mindestbestellmenge: 6
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DDZ23-7 DDZ23-7 Diodes Incorporated DDZ5V1B-DDZ43.pdf Description: DIODE ZENER 23V 470MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±3%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 23 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: SOD-123
Power - Max: 470 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 19 V
auf Bestellung 129000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.065 EUR
6000+0.06 EUR
9000+0.05 EUR
30000+0.049 EUR
75000+0.044 EUR
Mindestbestellmenge: 3000
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DDZ23-7 DDZ23-7 Diodes Incorporated DDZ5V1B-DDZ43.pdf Description: DIODE ZENER 23V 470MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±3%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 23 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: SOD-123
Power - Max: 470 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 19 V
auf Bestellung 131910 Stücke:
Lieferzeit 10-14 Tag (e)
46+0.39 EUR
67+0.26 EUR
137+0.13 EUR
500+0.11 EUR
1000+0.075 EUR
Mindestbestellmenge: 46
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DZ23C20-7-F DZ23C20-7-F Diodes Incorporated DZ23C2V7-DZ23C51.pdf Description: DIODE ZENER ARRAY 20V SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Cathode
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.1 EUR
6000+0.093 EUR
9000+0.087 EUR
15000+0.082 EUR
21000+0.078 EUR
Mindestbestellmenge: 3000
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DZ23C20-7-F DZ23C20-7-F Diodes Incorporated DZ23C2V7-DZ23C51.pdf Description: DIODE ZENER ARRAY 20V SOT23-3
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Cathode
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
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RS2G-13-F RS2G-13-F Diodes Incorporated ds15004.pdf Description: DIODE STANDARD 400V 1.5A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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RS2G-13-F RS2G-13-F Diodes Incorporated ds15004.pdf Description: DIODE STANDARD 400V 1.5A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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DMP58D1LV-13 DMP58D1LV-13 Diodes Incorporated DMP58D1LV.pdf Description: MOSFET 2P-CH 50V 0.22A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 490mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 37pF @ 25V
Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-563
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DMP58D1LV-13 DMP58D1LV-13 Diodes Incorporated DMP58D1LV.pdf Description: MOSFET 2P-CH 50V 0.22A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 490mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 37pF @ 25V
Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-563
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DMP58D1LV-7 DMP58D1LV-7 Diodes Incorporated DMP58D1LV.pdf Description: MOSFET 2P-CH 50V 0.22A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 490mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 37pF @ 25V
Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-563
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DMP58D1LV-7 DMP58D1LV-7 Diodes Incorporated DMP58D1LV.pdf Description: MOSFET 2P-CH 50V 0.22A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 490mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 37pF @ 25V
Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-563
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DMP58D1LVQ-13 DMP58D1LVQ-13 Diodes Incorporated DMP58D1LVQ.pdf Description: MOSFET 2P-CH 50V 0.22A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 490mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 37pF @ 25V
Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMP58D1LVQ-7 DMP58D1LVQ-7 Diodes Incorporated DMP58D1LVQ.pdf Description: MOSFET 2P-CH 50V 0.22A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 490mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 37pF @ 25V
Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 78000 Stücke:
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SMAJ110A-13-F SMAJ110A-13-F Diodes Incorporated SMAJ5.0CA-SMAJ200CA.pdf Description: TVS DIODE 110VWM 177VC SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: SMA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 122V
Voltage - Clamping (Max) @ Ipp: 177V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
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SMAJ110A-13 SMAJ110A-13 Diodes Incorporated SMAJ5.0%20170%20C%20A.pdf Description: TVS DIODE 110VWM 177VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: SMA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 122V
Voltage - Clamping (Max) @ Ipp: 177V
Power - Peak Pulse: 400W
Power Line Protection: Yes
Produkt ist nicht verfügbar
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SMAJ110A-13 SMAJ110A-13 Diodes Incorporated SMAJ5.0%20170%20C%20A.pdf Description: TVS DIODE 110VWM 177VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: SMA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 122V
Voltage - Clamping (Max) @ Ipp: 177V
Power - Peak Pulse: 400W
Power Line Protection: Yes
Produkt ist nicht verfügbar
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DMN3012LFG-13 DMN3012LFG-13 Diodes Incorporated DMN3012LFG.pdf Description: MOSFET 2N-CH 30V 20A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 15V, 1480pF @ 15V
Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V
Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 4.5V, 12.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.15V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type D)
Produkt ist nicht verfügbar
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DMN3012LFG-7 DMN3012LFG-7 Diodes Incorporated DMN3012LFG.pdf Description: MOSFET 2N-CH 30V 20A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 15V, 1480pF @ 15V
Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V
Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 4.5V, 12.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.15V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type D)
Produkt ist nicht verfügbar
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DMG6968UTS-13 DMG6968UTS-13 Diodes Incorporated ds31793.pdf Description: MOSFET 2N-CH 20V 5.2A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.2A
Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V
Rds On (Max) @ Id, Vgs: 23mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: 8-TSSOP
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DMG6968UTS-13 DMG6968UTS-13 Diodes Incorporated ds31793.pdf Description: MOSFET 2N-CH 20V 5.2A 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.2A
Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V
Rds On (Max) @ Id, Vgs: 23mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: 8-TSSOP
auf Bestellung 2279 Stücke:
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DDZ5V6BQ-7 DDZ5V6BQ-7 Diodes Incorporated DDZ5V1B-DDZ43.pdf Description: DIODE ZENER 5.6V 310MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±3%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 310 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 2.5 V
Qualification: AEC-Q101
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DDZ5V6BQ-7 DDZ5V6BQ-7 Diodes Incorporated DDZ5V1B-DDZ43.pdf Description: DIODE ZENER 5.6V 310MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±3%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 310 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 2.5 V
Qualification: AEC-Q101
auf Bestellung 1289840 Stücke:
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B250BE-13 B250BE-13 Diodes Incorporated B250%28A%2CB%29E%2C%20B260%28A%2CB%29E.pdf Description: DIODE SCHOTTKY 50V 2A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 75pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Produkt ist nicht verfügbar
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PI3EQX1014ZTFEX PI3EQX1014ZTFEX Diodes Incorporated PI3EQX1014-Product-Brief.pdf Description: USB3 EQX U-QFN2545-34 T&R 3.5K
Packaging: Tape & Reel (TR)
Package / Case: 34-UFQFN Exposed Pad
Number of Channels: 2
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Voltage - Supply: 3.3V
Applications: USB 3.2
Data Rate (Max): 10Gbps
Supplier Device Package: 34-UTQFN (2.5x4.5)
Signal Conditioning: Input Equalization
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PI3EQX1014ZTFEX PI3EQX1014ZTFEX Diodes Incorporated PI3EQX1014-Product-Brief.pdf Description: USB3 EQX U-QFN2545-34 T&R 3.5K
Packaging: Cut Tape (CT)
Package / Case: 34-UFQFN Exposed Pad
Number of Channels: 2
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Voltage - Supply: 3.3V
Applications: USB 3.2
Data Rate (Max): 10Gbps
Supplier Device Package: 34-UTQFN (2.5x4.5)
Signal Conditioning: Input Equalization
auf Bestellung 2834 Stücke:
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6+3.26 EUR
10+2.41 EUR
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PI3EQX2024ZTFEX Diodes Incorporated PI3EQX2024.pdf Description: USB3 EQX U-QFN2545-34 T&R 3.5K
Packaging: Tape & Reel (TR)
Package / Case: 34-UFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Applications: USB
Data Rate (Max): 10Gbps
Supplier Device Package: 34-UTQFN (2.5x4.5)
Signal Conditioning: Input Equalization
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PI3EQX2024ZTFEX Diodes Incorporated PI3EQX2024.pdf Description: USB3 EQX U-QFN2545-34 T&R 3.5K
Packaging: Cut Tape (CT)
Package / Case: 34-UFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Applications: USB
Data Rate (Max): 10Gbps
Supplier Device Package: 34-UTQFN (2.5x4.5)
Signal Conditioning: Input Equalization
auf Bestellung 3487 Stücke:
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4+4.89 EUR
10+4.41 EUR
25+4.16 EUR
100+3.61 EUR
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1000+2.59 EUR
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DT955-7 DT955-7 Diodes Incorporated DT955-7.pdf Description: TRANS SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Supplier Device Package: SOT-223-3
auf Bestellung 958000 Stücke:
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1000+0.28 EUR
2000+0.25 EUR
3000+0.24 EUR
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DT955-7 DT955-7 Diodes Incorporated DT955-7.pdf Description: TRANS SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Supplier Device Package: SOT-223-3
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F90800018Q F90800018Q Diodes Incorporated F90800018Q_A.pdf Description: CRYSTAL 8.0000MHZ 8PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Load Capacitance: 8pF
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 125°C
Frequency Stability: ±50ppm
Frequency Tolerance: ±50ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.053" (1.35mm)
ESR (Equivalent Series Resistance): 120 Ohms
Frequency: 8 MHz
Produkt ist nicht verfügbar
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F90800013 F90800013 Diodes Incorporated FY.pdf Description: CRYSTAL 8.0000MHZ 20PF
Packaging: Tape & Reel (TR)
Load Capacitance: 20pF
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±30ppm
Frequency Tolerance: ±30ppm
Operating Mode: Fundamental
ESR (Equivalent Series Resistance): 150 Ohms
Frequency: 8 MHz
Produkt ist nicht verfügbar
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F90800016 F90800016 Diodes Incorporated FY.pdf Description: CRYSTAL 8.0000MHZ 20PF
Packaging: Tape & Reel (TR)
Load Capacitance: 20pF
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±20ppm
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
ESR (Equivalent Series Resistance): 100 Ohms
Frequency: 8 MHz
Produkt ist nicht verfügbar
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FL2500445 FL2500445 Diodes Incorporated Description: CRYSTAL 25.0000MHZ 20PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 20pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 100°C
Frequency Stability: ±20ppm
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 30 Ohms
Frequency: 25 MHz
Produkt ist nicht verfügbar
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DMTH8008SPSQ-13 DMTH8008SPSQ-13 Diodes Incorporated DMTH8008SPSQ.pdf Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 14A, 10V
Power Dissipation (Max): 1.6W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DSR15U600-G DSR15U600-G Diodes Incorporated DSR15U600.pdf Description: DIODE GEN PURP 600V 15A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Produkt ist nicht verfügbar
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DMC1018UPDWQ-13 DMC1018UPDWQ-13 Diodes Incorporated DMC1018UPDWQ.pdf Description: MOSFET N/P-CH 12V 10A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta), 25W (Tc)
Drain to Source Voltage (Vdss): 12V, 20V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 31.3A (Ta), 6.7A (Ta), 20.9A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 6V, 866pF @ 6V
Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V, 38mOhm @ 8.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 30.4nC @ 8V, 19nC @ 8V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UXD)
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMC1018UPDWQ-13 DMC1018UPDWQ-13 Diodes Incorporated DMC1018UPDWQ.pdf Description: MOSFET N/P-CH 12V 10A PWRDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta), 25W (Tc)
Drain to Source Voltage (Vdss): 12V, 20V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 31.3A (Ta), 6.7A (Ta), 20.9A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 6V, 866pF @ 6V
Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V, 38mOhm @ 8.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 30.4nC @ 8V, 19nC @ 8V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UXD)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2238 Stücke:
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SMF4L18CA-7 SMF4L18CA-7 Diodes Incorporated ds43394.pdf Description: TVS DIODE 18VWM 29.2VC DO219AA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 13.7A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-219AA
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 400W
Power Line Protection: No
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SMF4L18CA-7 SMF4L18CA-7 Diodes Incorporated ds43394.pdf Description: TVS DIODE 18VWM 29.2VC DO219AA
Packaging: Cut Tape (CT)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 13.7A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-219AA
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 400W
Power Line Protection: No
auf Bestellung 5365 Stücke:
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DMG1012T-13 DMG1012T-13 Diodes Incorporated DMG1012TQ.pdf Description: MOSFET N-CH 20V 630MA SOT523 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 630mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 280mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 60.67 pF @ 16 V
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250000+0.044 EUR
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DMG1012T-13 DMG1012T-13 Diodes Incorporated DMG1012TQ.pdf Description: MOSFET N-CH 20V 630MA SOT523 T&R
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 630mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 280mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 60.67 pF @ 16 V
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46+0.39 EUR
76+0.23 EUR
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DMTH48M3SFVW-7 DMTH48M3SFVW.pdf
DMTH48M3SFVW-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta), 52.4A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.82W (Ta), 36.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
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2000+0.35 EUR
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DMTH48M3SFVWQ-7 DMTH48M3SFVWQ.pdf
DMTH48M3SFVWQ-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta), 52.4A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.82W (Ta), 36.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMTH48M3SFVWQ-13 DMTH48M3SFVWQ.pdf
DMTH48M3SFVWQ-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta), 52.4A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.82W (Ta), 36.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PI3CH3345ZHEX PI3CH3345.pdf
PI3CH3345ZHEX
Hersteller: Diodes Incorporated
Description: IC BUS SWITCH 8 X 1:1 20-TQFN
Packaging: Tape & Reel (TR)
Package / Case: 20-WFQFN Exposed Pad
Mounting Type: Surface Mount
Circuit: 8 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.97V ~ 3.63V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 20-TQFN (4.5x3.5)
auf Bestellung 10500 Stücke:
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Anzahl Preis
3500+1.41 EUR
7000+1.38 EUR
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PI3CH3345ZHEX PI3CH3345.pdf
PI3CH3345ZHEX
Hersteller: Diodes Incorporated
Description: IC BUS SWITCH 8 X 1:1 20-TQFN
Packaging: Cut Tape (CT)
Package / Case: 20-WFQFN Exposed Pad
Mounting Type: Surface Mount
Circuit: 8 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.97V ~ 3.63V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 20-TQFN (4.5x3.5)
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SMAJ200CA-13-F SMAJ5.0CA-SMAJ200CA.pdf
SMAJ200CA-13-F
Hersteller: Diodes Incorporated
Description: TVS DIODE 200VWM 324VC SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.2A
Voltage - Reverse Standoff (Typ): 200V
Supplier Device Package: SMA
Bidirectional Channels: 1
Voltage - Breakdown (Min): 224V
Voltage - Clamping (Max) @ Ipp: 324V
Power - Peak Pulse: 400W
Power Line Protection: No
auf Bestellung 125000 Stücke:
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Anzahl Preis
5000+0.14 EUR
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SMAJ200CA-13-F SMAJ5.0CA-SMAJ200CA.pdf
SMAJ200CA-13-F
Hersteller: Diodes Incorporated
Description: TVS DIODE 200VWM 324VC SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.2A
Voltage - Reverse Standoff (Typ): 200V
Supplier Device Package: SMA
Bidirectional Channels: 1
Voltage - Breakdown (Min): 224V
Voltage - Clamping (Max) @ Ipp: 324V
Power - Peak Pulse: 400W
Power Line Protection: No
auf Bestellung 129858 Stücke:
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25+0.7 EUR
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KBP304G KBP304G-KBP310G.pdf
KBP304G
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 400V 3A KBP
Packaging: Tube
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 184 Stücke:
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Anzahl Preis
10+1.83 EUR
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105+0.75 EUR
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DMT47M2SFVW-7 DMT47M2SFVW.pdf
DMT47M2SFVW-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 49.1A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.67W (Ta), 27.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
auf Bestellung 112000 Stücke:
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Anzahl Preis
2000+0.41 EUR
6000+0.38 EUR
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DMT47M2SFVW-7 DMT47M2SFVW.pdf
DMT47M2SFVW-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 49.1A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.67W (Ta), 27.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
auf Bestellung 112000 Stücke:
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Anzahl Preis
17+1.07 EUR
20+0.92 EUR
100+0.64 EUR
500+0.53 EUR
1000+0.45 EUR
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DMT47M2LDVQ-7 DMT47M2LDVQ.pdf
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 40V 11.9A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.34W (Ta), 14.8W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta), 30.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 891pF @ 20V
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
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Anzahl Preis
2000+0.76 EUR
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DMT47M2LDVQ-7 DMT47M2LDVQ.pdf
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 40V 11.9A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.34W (Ta), 14.8W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta), 30.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 891pF @ 20V
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.83 EUR
12+1.5 EUR
100+1.17 EUR
500+0.99 EUR
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DMT47M2SFVWQ-7 DMT47M2SFVWQ.pdf
DMT47M2SFVWQ-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 49.1A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.67W (Ta), 27.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMT47M2SFVWQ-7 DMT47M2SFVWQ.pdf
DMT47M2SFVWQ-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 49.1A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.67W (Ta), 27.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMT47M2SFVWQ-13 DMT47M2SFVWQ.pdf
DMT47M2SFVWQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 49.1A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.67W (Ta), 27.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMT47M2LDV-13 DMT47M2LDV.pdf
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 40V 11.9A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.34W (Ta), 14.8W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta), 30.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 891pF @ 20V
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
Produkt ist nicht verfügbar
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DMT47M2LDV-7 DMT47M2LDV.pdf
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 40V 11.9A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.34W (Ta), 14.8W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta), 30.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 891pF @ 20V
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.61 EUR
Mindestbestellmenge: 2000
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3.0SMCJ18CA-13 3.0SMCJ5.0CA-3.0SMCJ170CA.pdf
3.0SMCJ18CA-13
Hersteller: Diodes Incorporated
Description: TVS DIODE 18VWM 29.2VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 102.7A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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SBR20A300CTB-13 SBR20A300.pdf
SBR20A300CTB-13
Hersteller: Diodes Incorporated
Description: DIODE ARRAY SBR 300V 10A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 300 V
auf Bestellung 2400 Stücke:
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Anzahl Preis
800+1.28 EUR
1600+1.23 EUR
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SBR20A300CTB-13 SBR20A300.pdf
SBR20A300CTB-13
Hersteller: Diodes Incorporated
Description: DIODE ARRAY SBR 300V 10A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 300 V
auf Bestellung 2407 Stücke:
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6+3.47 EUR
10+2.27 EUR
100+1.73 EUR
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DDZ23-7 DDZ5V1B-DDZ43.pdf
DDZ23-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 23V 470MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±3%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 23 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: SOD-123
Power - Max: 470 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 19 V
auf Bestellung 129000 Stücke:
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Anzahl Preis
3000+0.065 EUR
6000+0.06 EUR
9000+0.05 EUR
30000+0.049 EUR
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DDZ23-7 DDZ5V1B-DDZ43.pdf
DDZ23-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 23V 470MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±3%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 23 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: SOD-123
Power - Max: 470 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 19 V
auf Bestellung 131910 Stücke:
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Anzahl Preis
46+0.39 EUR
67+0.26 EUR
137+0.13 EUR
500+0.11 EUR
1000+0.075 EUR
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DZ23C20-7-F DZ23C2V7-DZ23C51.pdf
DZ23C20-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER ARRAY 20V SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Cathode
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.1 EUR
6000+0.093 EUR
9000+0.087 EUR
15000+0.082 EUR
21000+0.078 EUR
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DZ23C20-7-F DZ23C2V7-DZ23C51.pdf
DZ23C20-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER ARRAY 20V SOT23-3
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Cathode
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
auf Bestellung 23998 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.63 EUR
40+0.44 EUR
100+0.22 EUR
500+0.18 EUR
1000+0.13 EUR
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RS2G-13-F ds15004.pdf
RS2G-13-F
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 400V 1.5A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 126000 Stücke:
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Anzahl Preis
3000+0.24 EUR
6000+0.23 EUR
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RS2G-13-F ds15004.pdf
RS2G-13-F
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 400V 1.5A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 127827 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
27+0.67 EUR
38+0.48 EUR
100+0.45 EUR
500+0.39 EUR
1000+0.35 EUR
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DMP58D1LV-13 DMP58D1LV.pdf
DMP58D1LV-13
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 50V 0.22A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 490mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 37pF @ 25V
Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 80000 Stücke:
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Anzahl Preis
10000+0.1 EUR
50000+0.084 EUR
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DMP58D1LV-13 DMP58D1LV.pdf
DMP58D1LV-13
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 50V 0.22A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 490mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 37pF @ 25V
Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 80000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.7 EUR
37+0.49 EUR
100+0.25 EUR
500+0.2 EUR
1000+0.15 EUR
2000+0.13 EUR
5000+0.12 EUR
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DMP58D1LV-7 DMP58D1LV.pdf
DMP58D1LV-7
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 50V 0.22A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 490mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 37pF @ 25V
Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 84000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.13 EUR
6000+0.12 EUR
9000+0.1 EUR
75000+0.084 EUR
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DMP58D1LV-7 DMP58D1LV.pdf
DMP58D1LV-7
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 50V 0.22A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 490mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 37pF @ 25V
Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 84000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.7 EUR
37+0.49 EUR
100+0.25 EUR
500+0.2 EUR
1000+0.15 EUR
Mindestbestellmenge: 25
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DMP58D1LVQ-13 DMP58D1LVQ.pdf
DMP58D1LVQ-13
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 50V 0.22A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 490mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 37pF @ 25V
Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMP58D1LVQ-7 DMP58D1LVQ.pdf
DMP58D1LVQ-7
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 50V 0.22A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 490mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 37pF @ 25V
Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 78000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.13 EUR
6000+0.12 EUR
9000+0.1 EUR
75000+0.084 EUR
Mindestbestellmenge: 3000
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SMAJ110A-13-F SMAJ5.0CA-SMAJ200CA.pdf
SMAJ110A-13-F
Hersteller: Diodes Incorporated
Description: TVS DIODE 110VWM 177VC SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: SMA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 122V
Voltage - Clamping (Max) @ Ipp: 177V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
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SMAJ110A-13 SMAJ5.0%20170%20C%20A.pdf
SMAJ110A-13
Hersteller: Diodes Incorporated
Description: TVS DIODE 110VWM 177VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: SMA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 122V
Voltage - Clamping (Max) @ Ipp: 177V
Power - Peak Pulse: 400W
Power Line Protection: Yes
Produkt ist nicht verfügbar
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SMAJ110A-13 SMAJ5.0%20170%20C%20A.pdf
SMAJ110A-13
Hersteller: Diodes Incorporated
Description: TVS DIODE 110VWM 177VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: SMA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 122V
Voltage - Clamping (Max) @ Ipp: 177V
Power - Peak Pulse: 400W
Power Line Protection: Yes
Produkt ist nicht verfügbar
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DMN3012LFG-13 DMN3012LFG.pdf
DMN3012LFG-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 20A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 15V, 1480pF @ 15V
Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V
Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 4.5V, 12.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.15V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type D)
Produkt ist nicht verfügbar
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DMN3012LFG-7 DMN3012LFG.pdf
DMN3012LFG-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 20A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 15V, 1480pF @ 15V
Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V
Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 4.5V, 12.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.15V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type D)
Produkt ist nicht verfügbar
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DMG6968UTS-13 ds31793.pdf
DMG6968UTS-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 5.2A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.2A
Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V
Rds On (Max) @ Id, Vgs: 23mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: 8-TSSOP
Produkt ist nicht verfügbar
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DMG6968UTS-13 ds31793.pdf
DMG6968UTS-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 5.2A 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.2A
Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V
Rds On (Max) @ Id, Vgs: 23mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: 8-TSSOP
auf Bestellung 2279 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.16 EUR
25+0.72 EUR
100+0.47 EUR
500+0.37 EUR
1000+0.34 EUR
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DDZ5V6BQ-7 DDZ5V1B-DDZ43.pdf
DDZ5V6BQ-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 5.6V 310MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±3%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 310 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 2.5 V
Qualification: AEC-Q101
auf Bestellung 1287000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.056 EUR
6000+0.052 EUR
9000+0.045 EUR
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DDZ5V6BQ-7 DDZ5V1B-DDZ43.pdf
DDZ5V6BQ-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 5.6V 310MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±3%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 310 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 2.5 V
Qualification: AEC-Q101
auf Bestellung 1289840 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
39+0.46 EUR
56+0.32 EUR
115+0.15 EUR
500+0.13 EUR
1000+0.089 EUR
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B250BE-13 B250%28A%2CB%29E%2C%20B260%28A%2CB%29E.pdf
B250BE-13
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 50V 2A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 75pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Produkt ist nicht verfügbar
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PI3EQX1014ZTFEX PI3EQX1014-Product-Brief.pdf
PI3EQX1014ZTFEX
Hersteller: Diodes Incorporated
Description: USB3 EQX U-QFN2545-34 T&R 3.5K
Packaging: Tape & Reel (TR)
Package / Case: 34-UFQFN Exposed Pad
Number of Channels: 2
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Voltage - Supply: 3.3V
Applications: USB 3.2
Data Rate (Max): 10Gbps
Supplier Device Package: 34-UTQFN (2.5x4.5)
Signal Conditioning: Input Equalization
Produkt ist nicht verfügbar
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PI3EQX1014ZTFEX PI3EQX1014-Product-Brief.pdf
PI3EQX1014ZTFEX
Hersteller: Diodes Incorporated
Description: USB3 EQX U-QFN2545-34 T&R 3.5K
Packaging: Cut Tape (CT)
Package / Case: 34-UFQFN Exposed Pad
Number of Channels: 2
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Voltage - Supply: 3.3V
Applications: USB 3.2
Data Rate (Max): 10Gbps
Supplier Device Package: 34-UTQFN (2.5x4.5)
Signal Conditioning: Input Equalization
auf Bestellung 2834 Stücke:
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Anzahl Preis
6+3.26 EUR
10+2.41 EUR
25+2.2 EUR
100+1.96 EUR
250+1.85 EUR
500+1.79 EUR
1000+1.73 EUR
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PI3EQX2024ZTFEX PI3EQX2024.pdf
Hersteller: Diodes Incorporated
Description: USB3 EQX U-QFN2545-34 T&R 3.5K
Packaging: Tape & Reel (TR)
Package / Case: 34-UFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Applications: USB
Data Rate (Max): 10Gbps
Supplier Device Package: 34-UTQFN (2.5x4.5)
Signal Conditioning: Input Equalization
Produkt ist nicht verfügbar
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PI3EQX2024ZTFEX PI3EQX2024.pdf
Hersteller: Diodes Incorporated
Description: USB3 EQX U-QFN2545-34 T&R 3.5K
Packaging: Cut Tape (CT)
Package / Case: 34-UFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Applications: USB
Data Rate (Max): 10Gbps
Supplier Device Package: 34-UTQFN (2.5x4.5)
Signal Conditioning: Input Equalization
auf Bestellung 3487 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.89 EUR
10+4.41 EUR
25+4.16 EUR
100+3.61 EUR
250+3.42 EUR
500+3.07 EUR
1000+2.59 EUR
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DT955-7 DT955-7.pdf
DT955-7
Hersteller: Diodes Incorporated
Description: TRANS SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Supplier Device Package: SOT-223-3
auf Bestellung 958000 Stücke:
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Anzahl Preis
1000+0.28 EUR
2000+0.25 EUR
3000+0.24 EUR
5000+0.22 EUR
10000+0.21 EUR
25000+0.19 EUR
50000+0.18 EUR
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DT955-7 DT955-7.pdf
DT955-7
Hersteller: Diodes Incorporated
Description: TRANS SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Supplier Device Package: SOT-223-3
auf Bestellung 958700 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.04 EUR
28+0.64 EUR
100+0.41 EUR
500+0.31 EUR
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F90800018Q F90800018Q_A.pdf
F90800018Q
Hersteller: Diodes Incorporated
Description: CRYSTAL 8.0000MHZ 8PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Load Capacitance: 8pF
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 125°C
Frequency Stability: ±50ppm
Frequency Tolerance: ±50ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.053" (1.35mm)
ESR (Equivalent Series Resistance): 120 Ohms
Frequency: 8 MHz
Produkt ist nicht verfügbar
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F90800013 FY.pdf
F90800013
Hersteller: Diodes Incorporated
Description: CRYSTAL 8.0000MHZ 20PF
Packaging: Tape & Reel (TR)
Load Capacitance: 20pF
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±30ppm
Frequency Tolerance: ±30ppm
Operating Mode: Fundamental
ESR (Equivalent Series Resistance): 150 Ohms
Frequency: 8 MHz
Produkt ist nicht verfügbar
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F90800016 FY.pdf
F90800016
Hersteller: Diodes Incorporated
Description: CRYSTAL 8.0000MHZ 20PF
Packaging: Tape & Reel (TR)
Load Capacitance: 20pF
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±20ppm
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
ESR (Equivalent Series Resistance): 100 Ohms
Frequency: 8 MHz
Produkt ist nicht verfügbar
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FL2500445
FL2500445
Hersteller: Diodes Incorporated
Description: CRYSTAL 25.0000MHZ 20PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 20pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 100°C
Frequency Stability: ±20ppm
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 30 Ohms
Frequency: 25 MHz
Produkt ist nicht verfügbar
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DMTH8008SPSQ-13 DMTH8008SPSQ.pdf
DMTH8008SPSQ-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 14A, 10V
Power Dissipation (Max): 1.6W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DSR15U600-G DSR15U600.pdf
DSR15U600-G
Hersteller: Diodes Incorporated
Description: DIODE GEN PURP 600V 15A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Produkt ist nicht verfügbar
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DMC1018UPDWQ-13 DMC1018UPDWQ.pdf
DMC1018UPDWQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 12V 10A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta), 25W (Tc)
Drain to Source Voltage (Vdss): 12V, 20V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 31.3A (Ta), 6.7A (Ta), 20.9A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 6V, 866pF @ 6V
Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V, 38mOhm @ 8.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 30.4nC @ 8V, 19nC @ 8V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UXD)
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMC1018UPDWQ-13 DMC1018UPDWQ.pdf
DMC1018UPDWQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 12V 10A PWRDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta), 25W (Tc)
Drain to Source Voltage (Vdss): 12V, 20V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 31.3A (Ta), 6.7A (Ta), 20.9A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 6V, 866pF @ 6V
Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V, 38mOhm @ 8.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 30.4nC @ 8V, 19nC @ 8V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UXD)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2238 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.64 EUR
18+1.02 EUR
100+0.67 EUR
500+0.52 EUR
1000+0.47 EUR
Mindestbestellmenge: 11
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SMF4L18CA-7 ds43394.pdf
SMF4L18CA-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 18VWM 29.2VC DO219AA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 13.7A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-219AA
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 400W
Power Line Protection: No
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.14 EUR
Mindestbestellmenge: 3000
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SMF4L18CA-7 ds43394.pdf
SMF4L18CA-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 18VWM 29.2VC DO219AA
Packaging: Cut Tape (CT)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 13.7A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-219AA
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 400W
Power Line Protection: No
auf Bestellung 5365 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
27+0.67 EUR
43+0.41 EUR
100+0.26 EUR
500+0.19 EUR
1000+0.17 EUR
Mindestbestellmenge: 27
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DMG1012T-13 DMG1012TQ.pdf
DMG1012T-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 630MA SOT523 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 630mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 280mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 60.67 pF @ 16 V
auf Bestellung 820000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.063 EUR
20000+0.057 EUR
30000+0.054 EUR
50000+0.051 EUR
70000+0.049 EUR
100000+0.047 EUR
250000+0.044 EUR
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DMG1012T-13 DMG1012TQ.pdf
DMG1012T-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 630MA SOT523 T&R
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 630mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 280mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 60.67 pF @ 16 V
auf Bestellung 820580 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
46+0.39 EUR
76+0.23 EUR
122+0.15 EUR
500+0.11 EUR
1000+0.094 EUR
2000+0.083 EUR
5000+0.072 EUR
Mindestbestellmenge: 46
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