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B280AE-13 B280AE-13 Diodes Incorporated B270%28A%2CB%29E%20-%20B2100%28A%2CB%29E.pdf Description: DIODE SCHOTTKY 80V 2A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 7 µA @ 80 V
auf Bestellung 90000 Stücke:
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5000+0.14 EUR
10000+0.11 EUR
50000+0.1 EUR
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B280AE-13 B280AE-13 Diodes Incorporated B270%28A%2CB%29E%20-%20B2100%28A%2CB%29E.pdf Description: DIODE SCHOTTKY 80V 2A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 7 µA @ 80 V
auf Bestellung 94294 Stücke:
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36+0.49 EUR
54+0.33 EUR
100+0.23 EUR
500+0.19 EUR
1000+0.16 EUR
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74LVC1G08FW4-7 74LVC1G08FW4-7 Diodes Incorporated 74LVC1G08.pdf Description: IC GATE AND 1CH 2-INP DFN1010-6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: X2-DFN1010-6
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 200 µA
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74LVC1G08FW4-7 74LVC1G08FW4-7 Diodes Incorporated 74LVC1G08.pdf Description: IC GATE AND 1CH 2-INP DFN1010-6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: X2-DFN1010-6
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 200 µA
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30+0.6 EUR
36+0.5 EUR
100+0.37 EUR
250+0.31 EUR
500+0.28 EUR
1000+0.25 EUR
2500+0.21 EUR
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74LVC1G08Z-7 74LVC1G08Z-7 Diodes Incorporated 74LVC1G08.pdf Description: IC GATE AND 1CH 2-INP SOT553
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SOT-553
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 200 µA
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20000+0.12 EUR
40000+0.11 EUR
100000+0.1 EUR
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74LVC1G08Z-7 74LVC1G08Z-7 Diodes Incorporated 74LVC1G08.pdf Description: IC GATE AND 1CH 2-INP SOT553
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SOT-553
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 200 µA
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38+0.47 EUR
46+0.39 EUR
100+0.29 EUR
250+0.24 EUR
500+0.21 EUR
1000+0.19 EUR
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DUP1105SOQ-7 DUP1105SOQ-7 Diodes Incorporated DUP1105SOQ.pdf Description: TVS DIODE 24VWM 44VC SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 60pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SOT-23-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 44V
Power - Peak Pulse: 350W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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DUP1105SOQ-7 DUP1105SOQ-7 Diodes Incorporated DUP1105SOQ.pdf Description: TVS DIODE 24VWM 44VC SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 60pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SOT-23-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 44V
Power - Peak Pulse: 350W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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38+0.48 EUR
56+0.32 EUR
115+0.15 EUR
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DMTH10H032LPSWQ-13 DMTH10H032LPSWQ-13 Diodes Incorporated DMTH10H032LPSWQ.pdf Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.4W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
Qualification: AEC-Q101
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DMTH10H032LPSWQ-13 DMTH10H032LPSWQ-13 Diodes Incorporated DMTH10H032LPSWQ.pdf Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.4W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMN2451UFB4Q-7B DMN2451UFB4Q-7B Diodes Incorporated DMN2451UFB4Q.pdf Description: MOSFET BVDSS: 8V~24V X2-DFN1006-
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1006-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 16 V
Qualification: AEC-Q101
auf Bestellung 70000 Stücke:
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10000+0.056 EUR
20000+0.049 EUR
30000+0.048 EUR
50000+0.045 EUR
70000+0.041 EUR
Mindestbestellmenge: 10000
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DMN2451UFB4Q-7B DMN2451UFB4Q-7B Diodes Incorporated DMN2451UFB4Q.pdf Description: MOSFET BVDSS: 8V~24V X2-DFN1006-
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1006-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 16 V
Qualification: AEC-Q101
auf Bestellung 74652 Stücke:
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50+0.35 EUR
85+0.21 EUR
136+0.13 EUR
500+0.095 EUR
1000+0.082 EUR
2000+0.074 EUR
5000+0.064 EUR
Mindestbestellmenge: 50
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DMTH10H032LPSW-13 DMTH10H032LPSW-13 Diodes Incorporated DMTH10H032LPSW.pdf Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.4W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
auf Bestellung 2500 Stücke:
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2500+0.36 EUR
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DMTH10H032LPSW-13 DMTH10H032LPSW-13 Diodes Incorporated DMTH10H032LPSW.pdf Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.4W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
auf Bestellung 4771 Stücke:
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12+1.48 EUR
20+0.92 EUR
100+0.6 EUR
500+0.46 EUR
1000+0.42 EUR
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DML3008LFDS-7 DML3008LFDS-7 Diodes Incorporated DML3008LFDS.pdf Description: MOSFET BVDSS: 25V~30V V-DFN2020-
Packaging: Tape & Reel (TR)
Features: Load Discharge, Power Good, Slew Rate Controlled
Package / Case: 8-PowerVFDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 7.5mOhm
Input Type: Non-Inverting
Voltage - Load: 0.5V ~ 20V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN2020-8 (Type N)
Fault Protection: Over Temperature
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 225000 Stücke:
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3000+1.09 EUR
6000+1.06 EUR
9000+1.05 EUR
Mindestbestellmenge: 3000
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DML3008LFDS-7 DML3008LFDS-7 Diodes Incorporated DML3008LFDS.pdf Description: MOSFET BVDSS: 25V~30V V-DFN2020-
Packaging: Cut Tape (CT)
Features: Load Discharge, Power Good, Slew Rate Controlled
Package / Case: 8-PowerVFDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 7.5mOhm
Input Type: Non-Inverting
Voltage - Load: 0.5V ~ 20V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN2020-8 (Type N)
Fault Protection: Over Temperature
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 225817 Stücke:
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8+2.2 EUR
11+1.61 EUR
25+1.46 EUR
100+1.3 EUR
250+1.22 EUR
500+1.17 EUR
1000+1.13 EUR
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DMN2451UFB4Q-7R DMN2451UFB4Q-7R Diodes Incorporated DMN2451UFB4Q.pdf Description: MOSFET BVDSS: 8V~24V X2-DFN1006-
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1006-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 16 V
Qualification: AEC-Q101
auf Bestellung 228000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.066 EUR
6000+0.059 EUR
9000+0.049 EUR
30000+0.046 EUR
75000+0.043 EUR
150000+0.042 EUR
Mindestbestellmenge: 3000
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DMN2451UFB4-7B DMN2451UFB4-7B Diodes Incorporated DMN2451UFB4.pdf Description: MOSFET BVDSS: 8V~24V X2-DFN1006-
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 16 V
auf Bestellung 560000 Stücke:
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10000+0.074 EUR
20000+0.06 EUR
30000+0.058 EUR
50000+0.056 EUR
70000+0.054 EUR
Mindestbestellmenge: 10000
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DML1012LDS-13 Diodes Incorporated DML1012LDS.pdf Description: MOSFET BVDSS: 8V~24V V-DFN3030-8
Packaging: Tape & Reel (TR)
Features: Load Discharge
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 8mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 0.8V ~ 4V
Voltage - Supply (Vcc/Vdd): 3.2V ~ 5.5V
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN3030-8 (Type R)
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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DML1012LDS-7A Diodes Incorporated DML1012LDS.pdf Description: MOSFET BVDSS: 8V~24V V-DFN3030-8
Packaging: Tape & Reel (TR)
Features: Load Discharge
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 8mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 0.8V ~ 4V
Voltage - Supply (Vcc/Vdd): 3.2V ~ 5.5V
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN3030-8 (Type R)
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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DML10M8LDS-7 Diodes Incorporated DML10M8LDS.pdf Description: MOSFET BVDSS: 8V~24V V-DFN3030-8
Packaging: Tape & Reel (TR)
Features: Load Discharge
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 8mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 0.8V ~ 4V
Voltage - Supply (Vcc/Vdd): 3.2V ~ 5.5V
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN3030-8 (Type R)
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 342000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.33 EUR
6000+0.32 EUR
15000+0.31 EUR
Mindestbestellmenge: 3000
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DMTH10H032SPSW-13 DMTH10H032SPSW-13 Diodes Incorporated DMTH10H032SPSW.pdf Description: MOSFET BVDSS: 61V~100V PowerDI50
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 544 pF @ 50 V
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DMTH10H032SPSWQ-13 DMTH10H032SPSWQ-13 Diodes Incorporated DMTH10H032SPSWQ.pdf Description: MOSFET BVDSS: 61V~100V PowerDI50
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.2W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 544 pF @ 50 V
Qualification: AEC-Q101
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DMT8008LSS-13 Diodes Incorporated DMT8008LSS.pdf Description: MOSFET BVDSS: 61V-100V SO-8
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 40 V
Produkt ist nicht verfügbar
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KBP4T10 Diodes Incorporated KBP4T10.pdf Description: BRIDGE RECT 1PHASE 1KV 4A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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AP3792S-13 Diodes Incorporated Description: ACDC GEN 4 CONT SO-8 T&R 4K
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SMBJ58CAQ-13-F SMBJ58CAQ-13-F Diodes Incorporated ds40740.pdf Description: TVS DIODE 58VWM 93.6VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.4A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMBJ58CAQ-13-F SMBJ58CAQ-13-F Diodes Incorporated ds40740.pdf Description: TVS DIODE 58VWM 93.6VC SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.4A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SBR10100CTL-13-2084 Diodes Incorporated Description: DIODE ARR SBR 100V 5A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
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DESD2FLEX2SOQ-7 DESD2FLEX2SOQ-7 Diodes Incorporated DESD2FLEX2SOQ.pdf Description: TVS DIODE 24VWM 41VC SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 25pF @ 5MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SOT-23-3
Bidirectional Channels: 2
Voltage - Breakdown (Min): 25.4V
Voltage - Clamping (Max) @ Ipp: 41V
Power - Peak Pulse: 230W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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DESD2FLEX2SOQ-7 DESD2FLEX2SOQ-7 Diodes Incorporated DESD2FLEX2SOQ.pdf Description: TVS DIODE 24VWM 41VC SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 25pF @ 5MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SOT-23-3
Bidirectional Channels: 2
Voltage - Breakdown (Min): 25.4V
Voltage - Clamping (Max) @ Ipp: 41V
Power - Peak Pulse: 230W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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DMP3036SFVQ-13 Diodes Incorporated DMP3036SFVQ.pdf Description: MOSFET BVDSS: 25V~30V PowerDI333
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1931 pF @ 15 V
Qualification: AEC-Q101
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DMP3036SFVQ-7 Diodes Incorporated DMP3036SFVQ.pdf Description: MOSFET BVDSS: 25V~30V PowerDI333
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1931 pF @ 15 V
Qualification: AEC-Q101
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BZX84B33Q-7-F BZX84B33Q-7-F Diodes Incorporated BZX84Bxxx.pdf Description: TIGHT TOLERANCE ZENER DIODE SOT2
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 23.1 V
Grade: Automotive
Qualification: AEC-Q101
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SBR20A60CTFP SBR20A60CTFP Diodes Incorporated SBR20A60CT_CTB_CTFP.pdf Description: DIODE ARRAY SBR 60V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
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D30V0S1UG3LP20-7 D30V0S1UG3LP20-7 Diodes Incorporated D30V0S1UG3LP20.pdf Description: TVS DIODE 30VWM 31V UDFN20203
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 500pF @ 1MHz
Current - Peak Pulse (10/1000µs): 180A (8/20µs)
Voltage - Reverse Standoff (Typ): 30V (Max)
Supplier Device Package: U-DFN2020-3 (Type C)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 30.5V
Voltage - Clamping (Max) @ Ipp: 31V (Typ)
Power - Peak Pulse: 5580W (5.58kW)
Power Line Protection: No
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D30V0S1UG3LP20-7 D30V0S1UG3LP20-7 Diodes Incorporated D30V0S1UG3LP20.pdf Description: TVS DIODE 30VWM 31V UDFN20203
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 500pF @ 1MHz
Current - Peak Pulse (10/1000µs): 180A (8/20µs)
Voltage - Reverse Standoff (Typ): 30V (Max)
Supplier Device Package: U-DFN2020-3 (Type C)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 30.5V
Voltage - Clamping (Max) @ Ipp: 31V (Typ)
Power - Peak Pulse: 5580W (5.58kW)
Power Line Protection: No
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FMMT411FDBWQ-7 FMMT411FDBWQ-7 Diodes Incorporated FMMT411FDBWQ.pdf Description: TRANS NPN 15V 5A W-DFN2020-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN - Avalanche Mode
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 110MHz
Supplier Device Package: W-DFN2020-3 (Type A)
Grade: Automotive
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 820 mW
Qualification: AEC-Q101
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FMMT411FDBWQ-7 FMMT411FDBWQ-7 Diodes Incorporated FMMT411FDBWQ.pdf Description: TRANS NPN 15V 5A W-DFN2020-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN - Avalanche Mode
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 110MHz
Supplier Device Package: W-DFN2020-3 (Type A)
Grade: Automotive
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 820 mW
Qualification: AEC-Q101
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FMMT411TD FMMT411TD Diodes Incorporated FMMT411.pdf Description: TRANS NPN 15V 0.9A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Avalanche Mode
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 40MHz
Supplier Device Package: SOT-23 (Type DN)
Current - Collector (Ic) (Max): 900 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 730 mW
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FMMT411QTA FMMT411QTA Diodes Incorporated FMMT411Q.pdf Description: TRANS NPN 15V 0.9A SOT-23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Avalanche Mode
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 40MHz
Supplier Device Package: SOT-23 (Type DN)
Grade: Automotive
Current - Collector (Ic) (Max): 900 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 800 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FH4800014 FH4800014 Diodes Incorporated FH.pdf Description: CRYSTAL 48.0000MHZ 10PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 10pF
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -30°C ~ 85°C
Frequency Stability: ±10ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.028" (0.70mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 48 MHz
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FH4800014 FH4800014 Diodes Incorporated FH.pdf Description: CRYSTAL 48.0000MHZ 10PF SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Load Capacitance: 10pF
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -30°C ~ 85°C
Frequency Stability: ±10ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.028" (0.70mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 48 MHz
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BZT585B16T-7 BZT585B16T-7 Diodes Incorporated BZT585BxVxT.pdf Description: DIODE ZENER 16V 350MW SOD523
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-523
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 11.2 V
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AP7351D-25FS4-7B Diodes Incorporated AP7351D.pdf Description: LDO CMOS LOWCURR X2-DFN1010-4 (T
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: X2-DFN1010-4 (Type B)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Current Limit, Enable
PSRR: 60dB (1kHz)
Voltage Dropout (Max): 0.48V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
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AP5724FDCG-7 AP5724FDCG-7 Diodes Incorporated AP5724.pdf Description: IC LED DRVR RGLTR PWM 750MA 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.2MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 750mA (Switch)
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: U-DFN2020-6 (Type C)
Dimming: PWM
Voltage - Supply (Min): 2.7V
Voltage - Supply (Max): 5.5V
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AP5724FDCG-7 AP5724FDCG-7 Diodes Incorporated AP5724.pdf Description: IC LED DRVR RGLTR PWM 750MA 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.2MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 750mA (Switch)
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: U-DFN2020-6 (Type C)
Dimming: PWM
Voltage - Supply (Min): 2.7V
Voltage - Supply (Max): 5.5V
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DDZ30D-7 DDZ30D-7 Diodes Incorporated DDZ5V1B-DDZ43.pdf Description: DIODE ZENER 30V 310MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2.5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-123
Power - Max: 310 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 23 V
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DDZ30D-7 DDZ30D-7 Diodes Incorporated DDZ5V1B-DDZ43.pdf Description: DIODE ZENER 30V 310MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±2.5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-123
Power - Max: 310 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 23 V
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RH02-T RH02-T Diodes Incorporated ds30137.pdf Description: RECTIFIER BRIDGE SMT 0.5A 200V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-MiniDIP
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 400 mA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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ZXGD3114N7TC ZXGD3114N7TC Diodes Incorporated ZXGD3114N7.pdf Description: OR'ING CONTROLLER SO-7 T&R 2.5K
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Supply: 4V ~ 20V
Supplier Device Package: 7-SO
Produkt ist nicht verfügbar
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ZXGD3114N7TC ZXGD3114N7TC Diodes Incorporated ZXGD3114N7.pdf Description: OR'ING CONTROLLER SO-7 T&R 2.5K
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Supply: 4V ~ 20V
Supplier Device Package: 7-SO
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APX803L20-49SA-7 APX803L20-49SA-7 Diodes Incorporated APX803L.pdf Description: IC SUPERVISOR 1 CHANNEL SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 143ms Minimum
Voltage - Threshold: 4.9V
Supplier Device Package: SOT-23-3
DigiKey Programmable: Not Verified
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PI6C49CB01JWEX Diodes Incorporated PI6C49CB01J.pdf Description: IC CLK TRANSLTR 1:1 360MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS, LVTTL
Type: Translator
Input: HCSL, LVDS, LVHSTL, LVPECL, SSTL
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:1
Differential - Input:Output: Yes/No
Supplier Device Package: 8-SOIC
Frequency - Max: 360 MHz
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PI6C49CB01JWEX Diodes Incorporated PI6C49CB01J.pdf Description: IC CLK TRANSLTR 1:1 360MHZ 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS, LVTTL
Type: Translator
Input: HCSL, LVDS, LVHSTL, LVPECL, SSTL
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:1
Differential - Input:Output: Yes/No
Supplier Device Package: 8-SOIC
Frequency - Max: 360 MHz
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PI6C49X0201WIEX PI6C49X0201WIEX Diodes Incorporated PI6C49X0201.pdf Description: IC TRANSLTR UNIDIRECTIONAL 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 8-SOIC
Channel Type: Unidirectional
Output Signal: LVCMOS, LVTTL
Translator Type: Mixed Signal
Channels per Circuit: 1
Input Signal: HCSL, LVDS, LVHSTL, LVPECL, SSTL
Number of Circuits: 1
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PI6C49X0201WIEX PI6C49X0201WIEX Diodes Incorporated PI6C49X0201.pdf Description: IC TRANSLTR UNIDIRECTIONAL 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 8-SOIC
Channel Type: Unidirectional
Output Signal: LVCMOS, LVTTL
Translator Type: Mixed Signal
Channels per Circuit: 1
Input Signal: HCSL, LVDS, LVHSTL, LVPECL, SSTL
Number of Circuits: 1
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DMC6040SSDQ-13 DMC6040SSDQ-13 Diodes Incorporated DMC6040SSDQ.pdf Description: MOSFET N/P-CH 60V 5.1A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.24W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V, 1030pF @ 30V
Rds On (Max) @ Id, Vgs: 40mOhm @ 8A, 10V, 110mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20.8nC @ 10V, 19.4nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Qualification: AEC-Q101
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DMC6040SSDQ-13 DMC6040SSDQ-13 Diodes Incorporated DMC6040SSDQ.pdf Description: MOSFET N/P-CH 60V 5.1A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.24W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V, 1030pF @ 30V
Rds On (Max) @ Id, Vgs: 40mOhm @ 8A, 10V, 110mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20.8nC @ 10V, 19.4nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2264 Stücke:
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B370CE-13 B370CE-13 Diodes Incorporated B370%28B%2CC%29E%20-%20B3100%28B%2CC%29E.pdf Description: DIODE SCHOTTKY 70V 3A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 105pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 70 V
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B280AE-13 B270%28A%2CB%29E%20-%20B2100%28A%2CB%29E.pdf
B280AE-13
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 80V 2A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 7 µA @ 80 V
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B280AE-13 B270%28A%2CB%29E%20-%20B2100%28A%2CB%29E.pdf
B280AE-13
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 80V 2A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 7 µA @ 80 V
auf Bestellung 94294 Stücke:
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36+0.49 EUR
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74LVC1G08FW4-7 74LVC1G08.pdf
74LVC1G08FW4-7
Hersteller: Diodes Incorporated
Description: IC GATE AND 1CH 2-INP DFN1010-6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: X2-DFN1010-6
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 200 µA
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74LVC1G08FW4-7 74LVC1G08.pdf
74LVC1G08FW4-7
Hersteller: Diodes Incorporated
Description: IC GATE AND 1CH 2-INP DFN1010-6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: X2-DFN1010-6
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 200 µA
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18+1 EUR
30+0.6 EUR
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74LVC1G08Z-7 74LVC1G08.pdf
74LVC1G08Z-7
Hersteller: Diodes Incorporated
Description: IC GATE AND 1CH 2-INP SOT553
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SOT-553
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 200 µA
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4000+0.15 EUR
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74LVC1G08Z-7 74LVC1G08.pdf
74LVC1G08Z-7
Hersteller: Diodes Incorporated
Description: IC GATE AND 1CH 2-INP SOT553
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SOT-553
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 200 µA
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23+0.79 EUR
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100+0.29 EUR
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DUP1105SOQ-7 DUP1105SOQ.pdf
DUP1105SOQ-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 24VWM 44VC SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 60pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SOT-23-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 44V
Power - Peak Pulse: 350W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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DUP1105SOQ-7 DUP1105SOQ.pdf
DUP1105SOQ-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 24VWM 44VC SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 60pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SOT-23-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 44V
Power - Peak Pulse: 350W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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38+0.48 EUR
56+0.32 EUR
115+0.15 EUR
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DMTH10H032LPSWQ-13 DMTH10H032LPSWQ.pdf
DMTH10H032LPSWQ-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.4W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
Qualification: AEC-Q101
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DMTH10H032LPSWQ-13 DMTH10H032LPSWQ.pdf
DMTH10H032LPSWQ-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.4W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMN2451UFB4Q-7B DMN2451UFB4Q.pdf
DMN2451UFB4Q-7B
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V X2-DFN1006-
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1006-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 16 V
Qualification: AEC-Q101
auf Bestellung 70000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.056 EUR
20000+0.049 EUR
30000+0.048 EUR
50000+0.045 EUR
70000+0.041 EUR
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DMN2451UFB4Q-7B DMN2451UFB4Q.pdf
DMN2451UFB4Q-7B
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V X2-DFN1006-
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1006-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 16 V
Qualification: AEC-Q101
auf Bestellung 74652 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+0.35 EUR
85+0.21 EUR
136+0.13 EUR
500+0.095 EUR
1000+0.082 EUR
2000+0.074 EUR
5000+0.064 EUR
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DMTH10H032LPSW-13 DMTH10H032LPSW.pdf
DMTH10H032LPSW-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.4W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.36 EUR
Mindestbestellmenge: 2500
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DMTH10H032LPSW-13 DMTH10H032LPSW.pdf
DMTH10H032LPSW-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.4W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
auf Bestellung 4771 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.48 EUR
20+0.92 EUR
100+0.6 EUR
500+0.46 EUR
1000+0.42 EUR
Mindestbestellmenge: 12
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DML3008LFDS-7 DML3008LFDS.pdf
DML3008LFDS-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V V-DFN2020-
Packaging: Tape & Reel (TR)
Features: Load Discharge, Power Good, Slew Rate Controlled
Package / Case: 8-PowerVFDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 7.5mOhm
Input Type: Non-Inverting
Voltage - Load: 0.5V ~ 20V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN2020-8 (Type N)
Fault Protection: Over Temperature
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 225000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.09 EUR
6000+1.06 EUR
9000+1.05 EUR
Mindestbestellmenge: 3000
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DML3008LFDS-7 DML3008LFDS.pdf
DML3008LFDS-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V V-DFN2020-
Packaging: Cut Tape (CT)
Features: Load Discharge, Power Good, Slew Rate Controlled
Package / Case: 8-PowerVFDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 7.5mOhm
Input Type: Non-Inverting
Voltage - Load: 0.5V ~ 20V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN2020-8 (Type N)
Fault Protection: Over Temperature
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 225817 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.2 EUR
11+1.61 EUR
25+1.46 EUR
100+1.3 EUR
250+1.22 EUR
500+1.17 EUR
1000+1.13 EUR
Mindestbestellmenge: 8
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DMN2451UFB4Q-7R DMN2451UFB4Q.pdf
DMN2451UFB4Q-7R
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V X2-DFN1006-
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1006-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 16 V
Qualification: AEC-Q101
auf Bestellung 228000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.066 EUR
6000+0.059 EUR
9000+0.049 EUR
30000+0.046 EUR
75000+0.043 EUR
150000+0.042 EUR
Mindestbestellmenge: 3000
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DMN2451UFB4-7B DMN2451UFB4.pdf
DMN2451UFB4-7B
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V X2-DFN1006-
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 16 V
auf Bestellung 560000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.074 EUR
20000+0.06 EUR
30000+0.058 EUR
50000+0.056 EUR
70000+0.054 EUR
Mindestbestellmenge: 10000
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DML1012LDS-13 DML1012LDS.pdf
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V V-DFN3030-8
Packaging: Tape & Reel (TR)
Features: Load Discharge
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 8mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 0.8V ~ 4V
Voltage - Supply (Vcc/Vdd): 3.2V ~ 5.5V
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN3030-8 (Type R)
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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DML1012LDS-7A DML1012LDS.pdf
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V V-DFN3030-8
Packaging: Tape & Reel (TR)
Features: Load Discharge
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 8mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 0.8V ~ 4V
Voltage - Supply (Vcc/Vdd): 3.2V ~ 5.5V
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN3030-8 (Type R)
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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DML10M8LDS-7 DML10M8LDS.pdf
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V V-DFN3030-8
Packaging: Tape & Reel (TR)
Features: Load Discharge
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 8mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 0.8V ~ 4V
Voltage - Supply (Vcc/Vdd): 3.2V ~ 5.5V
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN3030-8 (Type R)
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 342000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.33 EUR
6000+0.32 EUR
15000+0.31 EUR
Mindestbestellmenge: 3000
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DMTH10H032SPSW-13 DMTH10H032SPSW.pdf
DMTH10H032SPSW-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V PowerDI50
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 544 pF @ 50 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.38 EUR
Mindestbestellmenge: 2500
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DMTH10H032SPSWQ-13 DMTH10H032SPSWQ.pdf
DMTH10H032SPSWQ-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V PowerDI50
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.2W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 544 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 2391 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.67 EUR
17+1.04 EUR
100+0.68 EUR
500+0.53 EUR
1000+0.48 EUR
Mindestbestellmenge: 11
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DMT8008LSS-13 DMT8008LSS.pdf
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V-100V SO-8
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 40 V
Produkt ist nicht verfügbar
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KBP4T10 KBP4T10.pdf
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 1KV 4A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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AP3792S-13
Hersteller: Diodes Incorporated
Description: ACDC GEN 4 CONT SO-8 T&R 4K
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SMBJ58CAQ-13-F ds40740.pdf
SMBJ58CAQ-13-F
Hersteller: Diodes Incorporated
Description: TVS DIODE 58VWM 93.6VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.4A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.17 EUR
Mindestbestellmenge: 3000
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SMBJ58CAQ-13-F ds40740.pdf
SMBJ58CAQ-13-F
Hersteller: Diodes Incorporated
Description: TVS DIODE 58VWM 93.6VC SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.4A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3758 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
27+0.67 EUR
36+0.5 EUR
100+0.34 EUR
500+0.26 EUR
1000+0.23 EUR
Mindestbestellmenge: 27
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SBR10100CTL-13-2084
Hersteller: Diodes Incorporated
Description: DIODE ARR SBR 100V 5A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Produkt ist nicht verfügbar
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DESD2FLEX2SOQ-7 DESD2FLEX2SOQ.pdf
DESD2FLEX2SOQ-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 24VWM 41VC SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 25pF @ 5MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SOT-23-3
Bidirectional Channels: 2
Voltage - Breakdown (Min): 25.4V
Voltage - Clamping (Max) @ Ipp: 41V
Power - Peak Pulse: 230W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.17 EUR
6000+0.16 EUR
9000+0.15 EUR
Mindestbestellmenge: 3000
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DESD2FLEX2SOQ-7 DESD2FLEX2SOQ.pdf
DESD2FLEX2SOQ-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 24VWM 41VC SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 25pF @ 5MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SOT-23-3
Bidirectional Channels: 2
Voltage - Breakdown (Min): 25.4V
Voltage - Clamping (Max) @ Ipp: 41V
Power - Peak Pulse: 230W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 16702 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.65 EUR
41+0.43 EUR
100+0.29 EUR
500+0.23 EUR
1000+0.2 EUR
Mindestbestellmenge: 28
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DMP3036SFVQ-13 DMP3036SFVQ.pdf
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V PowerDI333
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1931 pF @ 15 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMP3036SFVQ-7 DMP3036SFVQ.pdf
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V PowerDI333
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1931 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.34 EUR
Mindestbestellmenge: 2000
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BZX84B33Q-7-F BZX84Bxxx.pdf
BZX84B33Q-7-F
Hersteller: Diodes Incorporated
Description: TIGHT TOLERANCE ZENER DIODE SOT2
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 23.1 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 63000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.059 EUR
6000+0.055 EUR
9000+0.045 EUR
Mindestbestellmenge: 3000
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SBR20A60CTFP SBR20A60CT_CTB_CTFP.pdf
SBR20A60CTFP
Hersteller: Diodes Incorporated
Description: DIODE ARRAY SBR 60V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.18 EUR
50+1.05 EUR
Mindestbestellmenge: 9
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D30V0S1UG3LP20-7 D30V0S1UG3LP20.pdf
D30V0S1UG3LP20-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 30VWM 31V UDFN20203
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 500pF @ 1MHz
Current - Peak Pulse (10/1000µs): 180A (8/20µs)
Voltage - Reverse Standoff (Typ): 30V (Max)
Supplier Device Package: U-DFN2020-3 (Type C)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 30.5V
Voltage - Clamping (Max) @ Ipp: 31V (Typ)
Power - Peak Pulse: 5580W (5.58kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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D30V0S1UG3LP20-7 D30V0S1UG3LP20.pdf
D30V0S1UG3LP20-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 30VWM 31V UDFN20203
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 500pF @ 1MHz
Current - Peak Pulse (10/1000µs): 180A (8/20µs)
Voltage - Reverse Standoff (Typ): 30V (Max)
Supplier Device Package: U-DFN2020-3 (Type C)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 30.5V
Voltage - Clamping (Max) @ Ipp: 31V (Typ)
Power - Peak Pulse: 5580W (5.58kW)
Power Line Protection: No
auf Bestellung 218 Stücke:
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29+0.62 EUR
43+0.42 EUR
100+0.28 EUR
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FMMT411FDBWQ-7 FMMT411FDBWQ.pdf
FMMT411FDBWQ-7
Hersteller: Diodes Incorporated
Description: TRANS NPN 15V 5A W-DFN2020-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN - Avalanche Mode
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 110MHz
Supplier Device Package: W-DFN2020-3 (Type A)
Grade: Automotive
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 820 mW
Qualification: AEC-Q101
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FMMT411FDBWQ-7 FMMT411FDBWQ.pdf
FMMT411FDBWQ-7
Hersteller: Diodes Incorporated
Description: TRANS NPN 15V 5A W-DFN2020-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN - Avalanche Mode
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 110MHz
Supplier Device Package: W-DFN2020-3 (Type A)
Grade: Automotive
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 820 mW
Qualification: AEC-Q101
auf Bestellung 35601 Stücke:
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Anzahl Preis
3+7.23 EUR
10+4.77 EUR
100+3.37 EUR
500+2.77 EUR
1000+2.58 EUR
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FMMT411TD FMMT411.pdf
FMMT411TD
Hersteller: Diodes Incorporated
Description: TRANS NPN 15V 0.9A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Avalanche Mode
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 40MHz
Supplier Device Package: SOT-23 (Type DN)
Current - Collector (Ic) (Max): 900 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 730 mW
auf Bestellung 16701 Stücke:
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4+5.68 EUR
10+3.73 EUR
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FMMT411QTA FMMT411Q.pdf
FMMT411QTA
Hersteller: Diodes Incorporated
Description: TRANS NPN 15V 0.9A SOT-23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Avalanche Mode
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 40MHz
Supplier Device Package: SOT-23 (Type DN)
Grade: Automotive
Current - Collector (Ic) (Max): 900 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 800 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FH4800014 FH.pdf
FH4800014
Hersteller: Diodes Incorporated
Description: CRYSTAL 48.0000MHZ 10PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 10pF
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -30°C ~ 85°C
Frequency Stability: ±10ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.028" (0.70mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 48 MHz
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FH4800014 FH.pdf
FH4800014
Hersteller: Diodes Incorporated
Description: CRYSTAL 48.0000MHZ 10PF SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Load Capacitance: 10pF
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -30°C ~ 85°C
Frequency Stability: ±10ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.028" (0.70mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 48 MHz
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13+1.41 EUR
15+1.24 EUR
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BZT585B16T-7 BZT585BxVxT.pdf
BZT585B16T-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 16V 350MW SOD523
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-523
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 11.2 V
auf Bestellung 673375 Stücke:
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Anzahl Preis
84+0.21 EUR
117+0.15 EUR
233+0.076 EUR
500+0.073 EUR
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AP7351D-25FS4-7B AP7351D.pdf
Hersteller: Diodes Incorporated
Description: LDO CMOS LOWCURR X2-DFN1010-4 (T
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: X2-DFN1010-4 (Type B)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Current Limit, Enable
PSRR: 60dB (1kHz)
Voltage Dropout (Max): 0.48V @ 150mA
Protection Features: Over Current
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AP5724FDCG-7 AP5724.pdf
AP5724FDCG-7
Hersteller: Diodes Incorporated
Description: IC LED DRVR RGLTR PWM 750MA 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.2MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 750mA (Switch)
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: U-DFN2020-6 (Type C)
Dimming: PWM
Voltage - Supply (Min): 2.7V
Voltage - Supply (Max): 5.5V
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AP5724FDCG-7 AP5724.pdf
AP5724FDCG-7
Hersteller: Diodes Incorporated
Description: IC LED DRVR RGLTR PWM 750MA 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.2MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 750mA (Switch)
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: U-DFN2020-6 (Type C)
Dimming: PWM
Voltage - Supply (Min): 2.7V
Voltage - Supply (Max): 5.5V
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10+1.8 EUR
17+1.09 EUR
25+0.9 EUR
100+0.69 EUR
250+0.59 EUR
500+0.53 EUR
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DDZ30D-7 DDZ5V1B-DDZ43.pdf
DDZ30D-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 30V 310MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2.5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-123
Power - Max: 310 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 23 V
auf Bestellung 12000 Stücke:
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3000+0.07 EUR
6000+0.065 EUR
9000+0.054 EUR
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DDZ30D-7 DDZ5V1B-DDZ43.pdf
DDZ30D-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 30V 310MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±2.5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-123
Power - Max: 310 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 23 V
auf Bestellung 12000 Stücke:
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Anzahl Preis
42+0.42 EUR
62+0.29 EUR
126+0.14 EUR
500+0.12 EUR
1000+0.081 EUR
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RH02-T ds30137.pdf
RH02-T
Hersteller: Diodes Incorporated
Description: RECTIFIER BRIDGE SMT 0.5A 200V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-MiniDIP
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 400 mA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 33000 Stücke:
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Anzahl Preis
3000+0.39 EUR
6000+0.37 EUR
9000+0.34 EUR
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ZXGD3114N7TC ZXGD3114N7.pdf
ZXGD3114N7TC
Hersteller: Diodes Incorporated
Description: OR'ING CONTROLLER SO-7 T&R 2.5K
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Supply: 4V ~ 20V
Supplier Device Package: 7-SO
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ZXGD3114N7TC ZXGD3114N7.pdf
ZXGD3114N7TC
Hersteller: Diodes Incorporated
Description: OR'ING CONTROLLER SO-7 T&R 2.5K
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Supply: 4V ~ 20V
Supplier Device Package: 7-SO
auf Bestellung 1789 Stücke:
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Anzahl Preis
5+3.66 EUR
10+2.72 EUR
25+2.49 EUR
100+2.23 EUR
250+2.1 EUR
500+2.03 EUR
1000+1.97 EUR
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APX803L20-49SA-7 APX803L.pdf
APX803L20-49SA-7
Hersteller: Diodes Incorporated
Description: IC SUPERVISOR 1 CHANNEL SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 143ms Minimum
Voltage - Threshold: 4.9V
Supplier Device Package: SOT-23-3
DigiKey Programmable: Not Verified
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Anzahl Preis
3000+0.18 EUR
6000+0.17 EUR
15000+0.16 EUR
30000+0.15 EUR
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PI6C49CB01JWEX PI6C49CB01J.pdf
Hersteller: Diodes Incorporated
Description: IC CLK TRANSLTR 1:1 360MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS, LVTTL
Type: Translator
Input: HCSL, LVDS, LVHSTL, LVPECL, SSTL
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:1
Differential - Input:Output: Yes/No
Supplier Device Package: 8-SOIC
Frequency - Max: 360 MHz
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2500+0.87 EUR
5000+0.83 EUR
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PI6C49CB01JWEX PI6C49CB01J.pdf
Hersteller: Diodes Incorporated
Description: IC CLK TRANSLTR 1:1 360MHZ 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS, LVTTL
Type: Translator
Input: HCSL, LVDS, LVHSTL, LVPECL, SSTL
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:1
Differential - Input:Output: Yes/No
Supplier Device Package: 8-SOIC
Frequency - Max: 360 MHz
auf Bestellung 5000 Stücke:
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Anzahl Preis
9+2.04 EUR
10+1.83 EUR
25+1.74 EUR
100+1.43 EUR
250+1.34 EUR
500+1.18 EUR
1000+0.93 EUR
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PI6C49X0201WIEX PI6C49X0201.pdf
PI6C49X0201WIEX
Hersteller: Diodes Incorporated
Description: IC TRANSLTR UNIDIRECTIONAL 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 8-SOIC
Channel Type: Unidirectional
Output Signal: LVCMOS, LVTTL
Translator Type: Mixed Signal
Channels per Circuit: 1
Input Signal: HCSL, LVDS, LVHSTL, LVPECL, SSTL
Number of Circuits: 1
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2500+2.02 EUR
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PI6C49X0201WIEX PI6C49X0201.pdf
PI6C49X0201WIEX
Hersteller: Diodes Incorporated
Description: IC TRANSLTR UNIDIRECTIONAL 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 8-SOIC
Channel Type: Unidirectional
Output Signal: LVCMOS, LVTTL
Translator Type: Mixed Signal
Channels per Circuit: 1
Input Signal: HCSL, LVDS, LVHSTL, LVPECL, SSTL
Number of Circuits: 1
auf Bestellung 17641 Stücke:
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Anzahl Preis
3+6.35 EUR
10+4.07 EUR
25+3.48 EUR
100+2.81 EUR
250+2.48 EUR
500+2.28 EUR
1000+2.11 EUR
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DMC6040SSDQ-13 DMC6040SSDQ.pdf
DMC6040SSDQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 60V 5.1A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.24W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V, 1030pF @ 30V
Rds On (Max) @ Id, Vgs: 40mOhm @ 8A, 10V, 110mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20.8nC @ 10V, 19.4nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Qualification: AEC-Q101
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DMC6040SSDQ-13 DMC6040SSDQ.pdf
DMC6040SSDQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 60V 5.1A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.24W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V, 1030pF @ 30V
Rds On (Max) @ Id, Vgs: 40mOhm @ 8A, 10V, 110mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20.8nC @ 10V, 19.4nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2264 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.37 EUR
17+1.06 EUR
100+0.73 EUR
500+0.61 EUR
1000+0.56 EUR
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B370CE-13 B370%28B%2CC%29E%20-%20B3100%28B%2CC%29E.pdf
B370CE-13
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 70V 3A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 105pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 70 V
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