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BC846BQ-7-F BC846BQ-7-F Diodes Incorporated ds11108.pdf Description: TRANS NPN 65V 0.1A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 310 mW
Qualification: AEC-Q101
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172+0.10 EUR
500+0.08 EUR
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BC856BQ-7-F BC856BQ-7-F Diodes Incorporated BC856AQ-BC857BQ.pdf Description: TRANS PNP 65V 0.1A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 310 mW
Qualification: AEC-Q101
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FD3300026 FD3300026 Diodes Incorporated FD_1-8V.pdf Description: XTAL OSC XO 33.0000MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: CMOS
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Voltage - Supply: 1.8V
Height - Seated (Max): 0.051" (1.30mm)
Frequency: 33 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
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DMN2310UTQ-7 DMN2310UTQ-7 Diodes Incorporated DMN2310UTQ.pdf Description: MOSFET BVDSS: 8V~24V SOT523 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 300mA, 4.5V
Power Dissipation (Max): 290mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-523
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V
Qualification: AEC-Q101
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DMN2310UTQ-7 DMN2310UTQ-7 Diodes Incorporated DMN2310UTQ.pdf Description: MOSFET BVDSS: 8V~24V SOT523 T&R
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 300mA, 4.5V
Power Dissipation (Max): 290mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-523
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V
Qualification: AEC-Q101
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DMN2310U-13 DMN2310U-13 Diodes Incorporated DMN2310U.pdf Description: MOSFET BVDSS: 8V~24V SOT23 T&R 1
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 175mOhm @ 300mA, 4.5V
Power Dissipation (Max): 480mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V
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DMN2310UW-13 DMN2310UW-13 Diodes Incorporated DMN2310UW.pdf Description: MOSFET BVDSS: 8V~24V SOT323 T&R
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 300mA, 4.5V
Power Dissipation (Max): 450mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V
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DMN2310UWQ-13 DMN2310UWQ-13 Diodes Incorporated DMN2310UWQ.pdf Description: MOSFET BVDSS: 8V~24V SOT323 T&R
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 300mA, 4.5V
Power Dissipation (Max): 450mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-323
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V
Qualification: AEC-Q101
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DMN2310UWQ-7 DMN2310UWQ-7 Diodes Incorporated DMN2310UWQ.pdf Description: MOSFET BVDSS: 8V~24V SOT323 T&R
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 300mA, 4.5V
Power Dissipation (Max): 450mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-323
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V
Qualification: AEC-Q101
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DMN2310UTQ-13 DMN2310UTQ-13 Diodes Incorporated DMN2310UTQ.pdf Description: MOSFET BVDSS: 8V~24V SOT523 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 300mA, 4.5V
Power Dissipation (Max): 290mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-523
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMN2310UT-7 DMN2310UT-7 Diodes Incorporated DMN2310UT.pdf Description: MOSFET BVDSS: 8V~24V SOT523 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 300mA, 4.5V
Power Dissipation (Max): 290mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V
Produkt ist nicht verfügbar
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BZT52C3V3SQ-7-F BZT52C3V3SQ-7-F Diodes Incorporated ds30093.pdf Description: DIODE ZENER 3.3V 200MW SOD323
Tolerance: ±6.06%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Qualification: AEC-Q101
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PI3B3126QEX-2017 PI3B3126QEX-2017 Diodes Incorporated PI3B3125_PI3B3126.pdf Description: BUS SWITCH 3V QSOP-16
Packaging: Cut Tape (CT)
Package / Case: 16-SSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.97V ~ 3.63V
Independent Circuits: 4
Voltage Supply Source: Single Supply
Supplier Device Package: 16-QSOP
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KK3270012 Diodes Incorporated KK3270012.pdf Description: XTAL OSC XO 32.7680KHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Voltage - Supply: 1.8V
Current - Supply (Max): 2mA
Height - Seated (Max): 0.045" (1.15mm)
Frequency: 32.768 kHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
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DDZ5V1BQ-7 DDZ5V1BQ-7 Diodes Incorporated DDZ5V1B-DDZ43.pdf Description: DIODE ZENER 5.1V 470MW SOD123
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 470 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1.5 V
Qualification: AEC-Q101
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150000+0.04 EUR
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DDZ5V1BQ-7 DDZ5V1BQ-7 Diodes Incorporated DDZ5V1B-DDZ43.pdf Description: DIODE ZENER 5.1V 470MW SOD123
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 470 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1.5 V
Qualification: AEC-Q101
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DDZ5V1BS-7 DDZ5V1BS-7 Diodes Incorporated DDZ5V1B-DDZ43.pdf Description: DIODE ZENER 5.07V 200MW SOD323
Tolerance: ±2.56%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.07 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1.5 V
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DDZ5V1BS-7 DDZ5V1BS-7 Diodes Incorporated DDZ5V1B-DDZ43.pdf Description: DIODE ZENER 5.07V 200MW SOD323
Tolerance: ±2.56%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.07 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1.5 V
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DDZ5V6ASFQ-7 DDZ5V6ASFQ-7 Diodes Incorporated DDZ5V6ASFQ.pdf Description: DIODE ZENER 5.415V 500MW SOD323F
Tolerance: ±2.5%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.415 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-323F
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 7.5 µA @ 2 V
Qualification: AEC-Q101
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DDZ5V6ASFQ-7 DDZ5V6ASFQ-7 Diodes Incorporated DDZ5V6ASFQ.pdf Description: DIODE ZENER 5.415V 500MW SOD323F
Tolerance: ±2.5%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.415 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-323F
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 7.5 µA @ 2 V
Qualification: AEC-Q101
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AP3012K-EVM Diodes Incorporated AP3012K-EVB-User-Guide.pdf Description: EVAL BOARD FOR AP3012
Packaging: Bulk
Voltage - Output: 29V
Voltage - Input: 2.6V ~ 16V
Contents: Board(s)
Frequency - Switching: 1.5MHz
Regulator Topology: Boost
Board Type: Fully Populated
Utilized IC / Part: AP3012
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Up
Outputs and Type: 1 Non-Isolated Output
Produkt ist nicht verfügbar
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SMCJ17AQ-13-F SMCJ17AQ-13-F Diodes Incorporated SMCJ5.0CAQ_SMCJ110CAQ.pdf Description: TVS DIODE 17VWM 27.6VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 53.3A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMCJ17AQ-13-F SMCJ17AQ-13-F Diodes Incorporated SMCJ5.0CAQ_SMCJ110CAQ.pdf Description: TVS DIODE 17VWM 27.6VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 53.3A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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3.0SMCJ17A-13 3.0SMCJ17A-13 Diodes Incorporated 3.0SMCJ5.0CA-3.0SMCJ170CA.pdf Description: TRANSIENT VOLTAGE SUPPRESSOR SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 108.7A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
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3.0SMCJ17AQ-13 3.0SMCJ17AQ-13 Diodes Incorporated 3.0SMCJ5.0CA-3.0SMCJ170CA.pdf Description: TRANSIENT VOLTAGE SUPPRESSOR SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 108.7A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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DFLS1200-7-2477 DFLS1200-7-2477 Diodes Incorporated Description: DIODE
Packaging: Bulk
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 23pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Produkt ist nicht verfügbar
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BZX84C9V1Q-7-F BZX84C9V1Q-7-F Diodes Incorporated ds18001.pdf Description: DIODE ZENER 9.1V 300MW SOT23
Tolerance: ±6.04%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Qualification: AEC-Q101
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SBR2M60S1F-7 SBR2M60S1F-7 Diodes Incorporated SBR2M60S1F.pdf Description: DIODE SBR 60V 2A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 800 nA @ 60 V
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SBR2M60S1F-7 SBR2M60S1F-7 Diodes Incorporated SBR2M60S1F.pdf Description: DIODE SBR 60V 2A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 800 nA @ 60 V
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SBR3U40S1FQ-7 SBR3U40S1FQ-7 Diodes Incorporated SBR3U40S1FQ.pdf Description: DIODE SBR 40V 3A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
Current - Reverse Leakage @ Vr: 180 µA @ 40 V
Qualification: AEC-Q101
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SBR3U40S1FQ-7 SBR3U40S1FQ-7 Diodes Incorporated SBR3U40S1FQ.pdf Description: DIODE SBR 40V 3A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
Current - Reverse Leakage @ Vr: 180 µA @ 40 V
Qualification: AEC-Q101
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SBR3U40S1F-7 SBR3U40S1F-7 Diodes Incorporated SBR3U40S1F.pdf Description: DIODE SBR 40V 3A SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
Current - Reverse Leakage @ Vr: 180 µA @ 40 V
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SBR3U40S1F-7 SBR3U40S1F-7 Diodes Incorporated SBR3U40S1F.pdf Description: DIODE SBR 40V 3A SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
Current - Reverse Leakage @ Vr: 180 µA @ 40 V
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BZX84C3V3Q-7-F BZX84C3V3Q-7-F Diodes Incorporated ds18001.pdf Description: DIODE ZENER 3.3V 300MW SOT23
Tolerance: ±6.06%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Qualification: AEC-Q101
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DMTH4007SK3-13 DMTH4007SK3-13 Diodes Incorporated DMTH4007SK3.pdf Description: MOSFET N-CH 40V 17.6A/76A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.6A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2082 pF @ 25 V
Qualification: AEC-Q101
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DMTH4007SK3-13 DMTH4007SK3-13 Diodes Incorporated DMTH4007SK3.pdf Description: MOSFET N-CH 40V 17.6A/76A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.6A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2082 pF @ 25 V
Qualification: AEC-Q101
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DMP4010SK3-13 DMP4010SK3-13 Diodes Incorporated DMP4010SK3.pdf Description: MOSFET P-CHANNEL 40V 50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 9.8A, 10V
Power Dissipation (Max): 3.3W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V
Qualification: AEC-Q101
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DMP4010SK3-13 DMP4010SK3-13 Diodes Incorporated DMP4010SK3.pdf Description: MOSFET P-CHANNEL 40V 50A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 9.8A, 10V
Power Dissipation (Max): 3.3W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 27416 Stücke:
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DMP4011SK3-13 DMP4011SK3-13 Diodes Incorporated DMP4011SK3.pdf Description: MOSFET P-CH 40V 14A/74A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 74A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2747 pF @ 20 V
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DMP4011SK3-13 DMP4011SK3-13 Diodes Incorporated DMP4011SK3.pdf Description: MOSFET P-CH 40V 14A/74A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 74A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2747 pF @ 20 V
auf Bestellung 49980 Stücke:
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DMTH47M2SK3-13 DMTH47M2SK3-13 Diodes Incorporated DMTH47M2SK3.pdf Description: MOSFET BVDSS: 31V~40V TO252 T&R
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
Produkt ist nicht verfügbar
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DMNH6021SK3-13 DMNH6021SK3-13 Diodes Incorporated DMNH6021SK3.pdf Description: MOSFET N-CH 60V 50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 12A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1143 pF @ 25 V
Qualification: AEC-Q101
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2500+0.47 EUR
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DMTH10H015SK3-13 DMTH10H015SK3-13 Diodes Incorporated DMTH10H015SK3.pdf Description: MOSFET BVDSS: 61V~100V TO252 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2343 pF @ 50 V
Produkt ist nicht verfügbar
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DMP4016SK3-13 DMP4016SK3-13 Diodes Incorporated DMP4016SK3.pdf Description: MOSFET BVDSS: 31V~40V TO252 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Power Dissipation (Max): 4W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V
Produkt ist nicht verfügbar
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DMPH4016SK3-13 DMPH4016SK3-13 Diodes Incorporated DMPH4016SK3.pdf Description: MOSFET BVDSS: 31V~40V TO252 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Power Dissipation (Max): 4.9W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V
Produkt ist nicht verfügbar
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DMJ70H1D3SK3-13 DMJ70H1D3SK3-13 Diodes Incorporated Description: MOSFET BVDSS: 651V~800V TO252 T&
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 264 pF @ 100 V
Produkt ist nicht verfügbar
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DMTH12H007SK3-13 DMTH12H007SK3-13 Diodes Incorporated DMTH12H007SK3.pdf Description: MOSFET BVDSS: 101V~250V TO252 T&
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 30A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3142 pF @ 60 V
Produkt ist nicht verfügbar
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DMTH4005SK3-13 DMTH4005SK3-13 Diodes Incorporated DMTH4005SK3.pdf Description: MOSFET N-CH 40V 95A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 50A, 10V
Power Dissipation (Max): 2.1W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 49.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3062 pF @ 20 V
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DMTH4005SK3-13 DMTH4005SK3-13 Diodes Incorporated DMTH4005SK3.pdf Description: MOSFET N-CH 40V 95A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 50A, 10V
Power Dissipation (Max): 2.1W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 49.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3062 pF @ 20 V
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DFLR1600Q-7 DFLR1600Q-7 Diodes Incorporated ds30602.pdf Description: DIODE STD 600V 1A POWERDI123
Packaging: Cut Tape (CT)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Qualification: AEC-Q101
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STPS1660 STPS1660 Diodes Incorporated STPS1660.pdf Description: DIODE ARRAY GP 600V 8A ITO220AB
Packaging: Bulk
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: ITO220AB (Type WX2)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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STPS1620 STPS1620 Diodes Incorporated STPS1620.pdf Description: DIODE ARRAY GP 200V 8A ITO220AB
Packaging: Bulk
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: ITO220AB (Type WX2)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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STPS1640 STPS1640 Diodes Incorporated STPS1640.pdf Description: DIODE ARRAY GP 400V 8A ITO220AB
Packaging: Bulk
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: ITO220AB (Type WX2)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 1400 Stücke:
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BAV99Q-13-F BAV99Q-13-F Diodes Incorporated BAV99.pdf Description: DIODE ARRAY GP 75V 300MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 300mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V
Qualification: AEC-Q101
auf Bestellung 15546558 Stücke:
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PI3AUX221ZTAEX PI3AUX221ZTAEX Diodes Incorporated PI3AUX221_Product_Brief.pdf Description: IC VIDEO INTERFACE U-QFN2020-12
Packaging: Cut Tape (CT)
Package / Case: 12-UFQFN
Mounting Type: Surface Mount
Function: Interface
Voltage - Supply: 1V ~ 5V
Applications: Video Display
Standards: HDMI 2.1
Supplier Device Package: U-QFN2020-12 (Type C)
auf Bestellung 5817 Stücke:
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10+1.76 EUR
17+1.06 EUR
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100+0.68 EUR
250+0.58 EUR
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DMN2991UDR4-7R DMN2991UDR4-7R Diodes Incorporated DMN2991UDR4.pdf Description: MOSFET 2N-CH 20V 0.5A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 380mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 14.6pF @ 16V
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.28nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1010-6 (Type UXC)
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DMN2991UDR4-7R DMN2991UDR4-7R Diodes Incorporated DMN2991UDR4.pdf Description: MOSFET 2N-CH 20V 0.5A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 380mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 14.6pF @ 16V
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.28nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1010-6 (Type UXC)
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56+0.32 EUR
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DMP22D5UDR4-7 DMP22D5UDR4-7 Diodes Incorporated DMP22D5UDR4.pdf Description: MOSFET 2P-CH 20V 0.36A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 380mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 16V
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1010-6 (Type UXC)
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DMP22D5UDR4-7 DMP22D5UDR4-7 Diodes Incorporated DMP22D5UDR4.pdf Description: MOSFET 2P-CH 20V 0.36A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 380mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 16V
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1010-6 (Type UXC)
auf Bestellung 119659 Stücke:
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39+0.46 EUR
57+0.31 EUR
117+0.15 EUR
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DMC2991UDR4-7 DMC2991UDR4-7 Diodes Incorporated DMC2991UDR4.pdf Description: MOSFET N/P-CH 20V 0.5A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 370mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), 360mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 14.6pF @ 16V, 17pF @ 16V
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.28nC @ 4.5V, 0.3nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1010-6 (Type UXC)
Produkt ist nicht verfügbar
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BC846BQ-7-F ds11108.pdf
BC846BQ-7-F
Hersteller: Diodes Incorporated
Description: TRANS NPN 65V 0.1A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 310 mW
Qualification: AEC-Q101
auf Bestellung 946720 Stücke:
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Anzahl Preis
63+0.28 EUR
107+0.17 EUR
172+0.10 EUR
500+0.08 EUR
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BC856BQ-7-F BC856AQ-BC857BQ.pdf
BC856BQ-7-F
Hersteller: Diodes Incorporated
Description: TRANS PNP 65V 0.1A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 310 mW
Qualification: AEC-Q101
auf Bestellung 1802238 Stücke:
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Anzahl Preis
72+0.25 EUR
120+0.15 EUR
195+0.09 EUR
500+0.07 EUR
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FD3300026 FD_1-8V.pdf
FD3300026
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 33.0000MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: CMOS
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Voltage - Supply: 1.8V
Height - Seated (Max): 0.051" (1.30mm)
Frequency: 33 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
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DMN2310UTQ-7 DMN2310UTQ.pdf
DMN2310UTQ-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V SOT523 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 300mA, 4.5V
Power Dissipation (Max): 290mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-523
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 96000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.12 EUR
6000+0.11 EUR
9000+0.10 EUR
15000+0.10 EUR
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30000+0.08 EUR
75000+0.08 EUR
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DMN2310UTQ-7 DMN2310UTQ.pdf
DMN2310UTQ-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V SOT523 T&R
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 300mA, 4.5V
Power Dissipation (Max): 290mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-523
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 98097 Stücke:
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Anzahl Preis
33+0.55 EUR
52+0.34 EUR
123+0.14 EUR
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DMN2310U-13 DMN2310U.pdf
DMN2310U-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V SOT23 T&R 1
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 175mOhm @ 300mA, 4.5V
Power Dissipation (Max): 480mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V
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DMN2310UW-13 DMN2310UW.pdf
DMN2310UW-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V SOT323 T&R
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 300mA, 4.5V
Power Dissipation (Max): 450mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V
auf Bestellung 150000 Stücke:
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Anzahl Preis
10000+0.06 EUR
20000+0.06 EUR
30000+0.05 EUR
50000+0.05 EUR
70000+0.05 EUR
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DMN2310UWQ-13 DMN2310UWQ.pdf
DMN2310UWQ-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V SOT323 T&R
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 300mA, 4.5V
Power Dissipation (Max): 450mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-323
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMN2310UWQ-7 DMN2310UWQ.pdf
DMN2310UWQ-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V SOT323 T&R
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 300mA, 4.5V
Power Dissipation (Max): 450mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-323
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMN2310UTQ-13 DMN2310UTQ.pdf
DMN2310UTQ-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V SOT523 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 300mA, 4.5V
Power Dissipation (Max): 290mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-523
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMN2310UT-7 DMN2310UT.pdf
DMN2310UT-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V SOT523 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 300mA, 4.5V
Power Dissipation (Max): 290mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V
Produkt ist nicht verfügbar
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BZT52C3V3SQ-7-F ds30093.pdf
BZT52C3V3SQ-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 3.3V 200MW SOD323
Tolerance: ±6.06%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Qualification: AEC-Q101
auf Bestellung 299690 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
91+0.19 EUR
130+0.14 EUR
272+0.07 EUR
500+0.06 EUR
1000+0.06 EUR
Mindestbestellmenge: 91
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PI3B3126QEX-2017 PI3B3125_PI3B3126.pdf
PI3B3126QEX-2017
Hersteller: Diodes Incorporated
Description: BUS SWITCH 3V QSOP-16
Packaging: Cut Tape (CT)
Package / Case: 16-SSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.97V ~ 3.63V
Independent Circuits: 4
Voltage Supply Source: Single Supply
Supplier Device Package: 16-QSOP
auf Bestellung 162500 Stücke:
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Anzahl Preis
11+1.67 EUR
18+1.01 EUR
25+0.84 EUR
100+0.65 EUR
250+0.55 EUR
500+0.49 EUR
1000+0.44 EUR
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KK3270012 KK3270012.pdf
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 32.7680KHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Voltage - Supply: 1.8V
Current - Supply (Max): 2mA
Height - Seated (Max): 0.045" (1.15mm)
Frequency: 32.768 kHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
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DDZ5V1BQ-7 DDZ5V1B-DDZ43.pdf
DDZ5V1BQ-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 5.1V 470MW SOD123
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 470 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1.5 V
Qualification: AEC-Q101
auf Bestellung 1092000 Stücke:
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3000+0.07 EUR
6000+0.06 EUR
9000+0.06 EUR
15000+0.06 EUR
21000+0.05 EUR
30000+0.05 EUR
75000+0.05 EUR
150000+0.04 EUR
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DDZ5V1BQ-7 DDZ5V1B-DDZ43.pdf
DDZ5V1BQ-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 5.1V 470MW SOD123
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 470 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1.5 V
Qualification: AEC-Q101
auf Bestellung 1094955 Stücke:
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Anzahl Preis
67+0.26 EUR
100+0.18 EUR
149+0.12 EUR
500+0.09 EUR
1000+0.08 EUR
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DDZ5V1BS-7 DDZ5V1B-DDZ43.pdf
DDZ5V1BS-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 5.07V 200MW SOD323
Tolerance: ±2.56%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.07 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1.5 V
auf Bestellung 48000 Stücke:
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Anzahl Preis
3000+0.08 EUR
6000+0.08 EUR
9000+0.06 EUR
30000+0.06 EUR
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DDZ5V1BS-7 DDZ5V1B-DDZ43.pdf
DDZ5V1BS-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 5.07V 200MW SOD323
Tolerance: ±2.56%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.07 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1.5 V
auf Bestellung 50085 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
36+0.49 EUR
54+0.33 EUR
110+0.16 EUR
500+0.13 EUR
1000+0.09 EUR
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DDZ5V6ASFQ-7 DDZ5V6ASFQ.pdf
DDZ5V6ASFQ-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 5.415V 500MW SOD323F
Tolerance: ±2.5%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.415 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-323F
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 7.5 µA @ 2 V
Qualification: AEC-Q101
auf Bestellung 177000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.06 EUR
6000+0.06 EUR
9000+0.06 EUR
15000+0.06 EUR
21000+0.05 EUR
30000+0.05 EUR
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DDZ5V6ASFQ-7 DDZ5V6ASFQ.pdf
DDZ5V6ASFQ-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 5.415V 500MW SOD323F
Tolerance: ±2.5%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.415 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-323F
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 7.5 µA @ 2 V
Qualification: AEC-Q101
auf Bestellung 179681 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+0.30 EUR
88+0.20 EUR
177+0.10 EUR
500+0.10 EUR
1000+0.09 EUR
Mindestbestellmenge: 59
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AP3012K-EVM AP3012K-EVB-User-Guide.pdf
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AP3012
Packaging: Bulk
Voltage - Output: 29V
Voltage - Input: 2.6V ~ 16V
Contents: Board(s)
Frequency - Switching: 1.5MHz
Regulator Topology: Boost
Board Type: Fully Populated
Utilized IC / Part: AP3012
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Up
Outputs and Type: 1 Non-Isolated Output
Produkt ist nicht verfügbar
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SMCJ17AQ-13-F SMCJ5.0CAQ_SMCJ110CAQ.pdf
SMCJ17AQ-13-F
Hersteller: Diodes Incorporated
Description: TVS DIODE 17VWM 27.6VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 53.3A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMCJ17AQ-13-F SMCJ5.0CAQ_SMCJ110CAQ.pdf
SMCJ17AQ-13-F
Hersteller: Diodes Incorporated
Description: TVS DIODE 17VWM 27.6VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 53.3A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+1.02 EUR
20+0.89 EUR
100+0.62 EUR
500+0.52 EUR
1000+0.44 EUR
Mindestbestellmenge: 18
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3.0SMCJ17A-13 3.0SMCJ5.0CA-3.0SMCJ170CA.pdf
3.0SMCJ17A-13
Hersteller: Diodes Incorporated
Description: TRANSIENT VOLTAGE SUPPRESSOR SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 108.7A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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3.0SMCJ17AQ-13 3.0SMCJ5.0CA-3.0SMCJ170CA.pdf
3.0SMCJ17AQ-13
Hersteller: Diodes Incorporated
Description: TRANSIENT VOLTAGE SUPPRESSOR SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 108.7A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.81 EUR
Mindestbestellmenge: 3000
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DFLS1200-7-2477
DFLS1200-7-2477
Hersteller: Diodes Incorporated
Description: DIODE
Packaging: Bulk
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 23pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Produkt ist nicht verfügbar
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BZX84C9V1Q-7-F ds18001.pdf
BZX84C9V1Q-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 9.1V 300MW SOT23
Tolerance: ±6.04%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Qualification: AEC-Q101
auf Bestellung 84000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
100+0.18 EUR
141+0.12 EUR
294+0.06 EUR
500+0.06 EUR
1000+0.06 EUR
Mindestbestellmenge: 100
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SBR2M60S1F-7 SBR2M60S1F.pdf
SBR2M60S1F-7
Hersteller: Diodes Incorporated
Description: DIODE SBR 60V 2A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 800 nA @ 60 V
auf Bestellung 708000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.17 EUR
9000+0.15 EUR
75000+0.14 EUR
Mindestbestellmenge: 3000
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SBR2M60S1F-7 SBR2M60S1F.pdf
SBR2M60S1F-7
Hersteller: Diodes Incorporated
Description: DIODE SBR 60V 2A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 800 nA @ 60 V
auf Bestellung 714953 Stücke:
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Anzahl Preis
28+0.65 EUR
36+0.50 EUR
100+0.30 EUR
500+0.28 EUR
1000+0.19 EUR
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SBR3U40S1FQ-7 SBR3U40S1FQ.pdf
SBR3U40S1FQ-7
Hersteller: Diodes Incorporated
Description: DIODE SBR 40V 3A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
Current - Reverse Leakage @ Vr: 180 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 255000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.18 EUR
6000+0.17 EUR
9000+0.16 EUR
75000+0.15 EUR
Mindestbestellmenge: 3000
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SBR3U40S1FQ-7 SBR3U40S1FQ.pdf
SBR3U40S1FQ-7
Hersteller: Diodes Incorporated
Description: DIODE SBR 40V 3A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
Current - Reverse Leakage @ Vr: 180 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 256693 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
26+0.69 EUR
34+0.52 EUR
100+0.31 EUR
500+0.29 EUR
1000+0.20 EUR
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SBR3U40S1F-7 SBR3U40S1F.pdf
SBR3U40S1F-7
Hersteller: Diodes Incorporated
Description: DIODE SBR 40V 3A SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
Current - Reverse Leakage @ Vr: 180 µA @ 40 V
auf Bestellung 288000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.17 EUR
6000+0.16 EUR
9000+0.15 EUR
30000+0.14 EUR
75000+0.12 EUR
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SBR3U40S1F-7 SBR3U40S1F.pdf
SBR3U40S1F-7
Hersteller: Diodes Incorporated
Description: DIODE SBR 40V 3A SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
Current - Reverse Leakage @ Vr: 180 µA @ 40 V
auf Bestellung 290535 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.76 EUR
33+0.54 EUR
100+0.27 EUR
500+0.24 EUR
1000+0.19 EUR
Mindestbestellmenge: 24
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BZX84C3V3Q-7-F ds18001.pdf
BZX84C3V3Q-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 3.3V 300MW SOT23
Tolerance: ±6.06%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Qualification: AEC-Q101
auf Bestellung 305765 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
100+0.18 EUR
148+0.12 EUR
308+0.06 EUR
500+0.06 EUR
1000+0.05 EUR
Mindestbestellmenge: 100
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DMTH4007SK3-13 DMTH4007SK3.pdf
DMTH4007SK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 17.6A/76A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.6A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2082 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.63 EUR
5000+0.62 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
DMTH4007SK3-13 DMTH4007SK3.pdf
DMTH4007SK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 17.6A/76A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.6A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2082 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 7450 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+1.99 EUR
14+1.35 EUR
100+0.94 EUR
500+0.76 EUR
1000+0.70 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
DMP4010SK3-13 DMP4010SK3.pdf
DMP4010SK3-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CHANNEL 40V 50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 9.8A, 10V
Power Dissipation (Max): 3.3W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 25000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.66 EUR
Mindestbestellmenge: 2500
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DMP4010SK3-13 DMP4010SK3.pdf
DMP4010SK3-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CHANNEL 40V 50A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 9.8A, 10V
Power Dissipation (Max): 3.3W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 27416 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.08 EUR
13+1.40 EUR
100+0.98 EUR
500+0.79 EUR
1000+0.73 EUR
Mindestbestellmenge: 9
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DMP4011SK3-13 DMP4011SK3.pdf
DMP4011SK3-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 40V 14A/74A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 74A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2747 pF @ 20 V
auf Bestellung 47500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.88 EUR
5000+0.84 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
DMP4011SK3-13 DMP4011SK3.pdf
DMP4011SK3-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 40V 14A/74A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 74A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2747 pF @ 20 V
auf Bestellung 49980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.13 EUR
10+2.00 EUR
100+1.35 EUR
500+1.07 EUR
1000+0.98 EUR
Mindestbestellmenge: 6
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DMTH47M2SK3-13 DMTH47M2SK3.pdf
DMTH47M2SK3-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V TO252 T&R
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
Produkt ist nicht verfügbar
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DMNH6021SK3-13 DMNH6021SK3.pdf
DMNH6021SK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 12A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1143 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.47 EUR
5000+0.45 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
DMTH10H015SK3-13 DMTH10H015SK3.pdf
DMTH10H015SK3-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V TO252 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2343 pF @ 50 V
Produkt ist nicht verfügbar
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DMP4016SK3-13 DMP4016SK3.pdf
DMP4016SK3-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V TO252 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Power Dissipation (Max): 4W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V
Produkt ist nicht verfügbar
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DMPH4016SK3-13 DMPH4016SK3.pdf
DMPH4016SK3-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V TO252 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Power Dissipation (Max): 4.9W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMJ70H1D3SK3-13
DMJ70H1D3SK3-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 651V~800V TO252 T&
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 264 pF @ 100 V
Produkt ist nicht verfügbar
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DMTH12H007SK3-13 DMTH12H007SK3.pdf
DMTH12H007SK3-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 101V~250V TO252 T&
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 30A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3142 pF @ 60 V
Produkt ist nicht verfügbar
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DMTH4005SK3-13 DMTH4005SK3.pdf
DMTH4005SK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 95A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 50A, 10V
Power Dissipation (Max): 2.1W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 49.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3062 pF @ 20 V
auf Bestellung 17500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.48 EUR
5000+0.45 EUR
12500+0.43 EUR
Mindestbestellmenge: 2500
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DMTH4005SK3-13 DMTH4005SK3.pdf
DMTH4005SK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 95A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 50A, 10V
Power Dissipation (Max): 2.1W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 49.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3062 pF @ 20 V
auf Bestellung 17500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.30 EUR
Mindestbestellmenge: 14
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DFLR1600Q-7 ds30602.pdf
DFLR1600Q-7
Hersteller: Diodes Incorporated
Description: DIODE STD 600V 1A POWERDI123
Packaging: Cut Tape (CT)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.70 EUR
41+0.43 EUR
100+0.27 EUR
500+0.21 EUR
1000+0.18 EUR
Mindestbestellmenge: 25
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STPS1660 STPS1660.pdf
STPS1660
Hersteller: Diodes Incorporated
Description: DIODE ARRAY GP 600V 8A ITO220AB
Packaging: Bulk
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: ITO220AB (Type WX2)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 2900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+0.80 EUR
Mindestbestellmenge: 50
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STPS1620 STPS1620.pdf
STPS1620
Hersteller: Diodes Incorporated
Description: DIODE ARRAY GP 200V 8A ITO220AB
Packaging: Bulk
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: ITO220AB (Type WX2)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 700 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+0.87 EUR
Mindestbestellmenge: 50
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STPS1640 STPS1640.pdf
STPS1640
Hersteller: Diodes Incorporated
Description: DIODE ARRAY GP 400V 8A ITO220AB
Packaging: Bulk
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: ITO220AB (Type WX2)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 1400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+1.15 EUR
Mindestbestellmenge: 50
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BAV99Q-13-F BAV99.pdf
BAV99Q-13-F
Hersteller: Diodes Incorporated
Description: DIODE ARRAY GP 75V 300MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 300mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V
Qualification: AEC-Q101
auf Bestellung 15546558 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
100+0.18 EUR
148+0.12 EUR
172+0.10 EUR
500+0.07 EUR
1000+0.06 EUR
2000+0.06 EUR
5000+0.05 EUR
Mindestbestellmenge: 100
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PI3AUX221ZTAEX PI3AUX221_Product_Brief.pdf
PI3AUX221ZTAEX
Hersteller: Diodes Incorporated
Description: IC VIDEO INTERFACE U-QFN2020-12
Packaging: Cut Tape (CT)
Package / Case: 12-UFQFN
Mounting Type: Surface Mount
Function: Interface
Voltage - Supply: 1V ~ 5V
Applications: Video Display
Standards: HDMI 2.1
Supplier Device Package: U-QFN2020-12 (Type C)
auf Bestellung 5817 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.76 EUR
17+1.06 EUR
25+0.88 EUR
100+0.68 EUR
250+0.58 EUR
500+0.52 EUR
1000+0.46 EUR
Mindestbestellmenge: 10
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DMN2991UDR4-7R DMN2991UDR4.pdf
DMN2991UDR4-7R
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 0.5A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 380mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 14.6pF @ 16V
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.28nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1010-6 (Type UXC)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.06 EUR
Mindestbestellmenge: 5000
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DMN2991UDR4-7R DMN2991UDR4.pdf
DMN2991UDR4-7R
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 0.5A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 380mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 14.6pF @ 16V
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.28nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1010-6 (Type UXC)
auf Bestellung 5119 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
90+0.20 EUR
145+0.12 EUR
500+0.09 EUR
1000+0.08 EUR
2000+0.07 EUR
Mindestbestellmenge: 56
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DMP22D5UDR4-7 DMP22D5UDR4.pdf
DMP22D5UDR4-7
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 20V 0.36A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 380mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 16V
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1010-6 (Type UXC)
auf Bestellung 115000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.05 EUR
10000+0.04 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
DMP22D5UDR4-7 DMP22D5UDR4.pdf
DMP22D5UDR4-7
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 20V 0.36A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 380mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 16V
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1010-6 (Type UXC)
auf Bestellung 119659 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
39+0.46 EUR
57+0.31 EUR
117+0.15 EUR
500+0.13 EUR
1000+0.09 EUR
2000+0.08 EUR
Mindestbestellmenge: 39
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DMC2991UDR4-7 DMC2991UDR4.pdf
DMC2991UDR4-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 20V 0.5A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 370mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), 360mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 14.6pF @ 16V, 17pF @ 16V
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.28nC @ 4.5V, 0.3nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1010-6 (Type UXC)
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