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P4SMAJ33CA P4SMAJ33CA Diotec Semiconductor p4smaj65.pdf Description: TVS DIODE 33VWM 53.3VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -50°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.5A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 400W
Power Line Protection: No
auf Bestellung 7269 Stücke:
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91+0.19 EUR
122+0.14 EUR
147+0.12 EUR
500+0.11 EUR
1000+0.10 EUR
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ESW6006 ESW6006 Diotec Semiconductor esw6004.pdf Description: DIODE STANDARD 600V 60A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
auf Bestellung 444 Stücke:
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30+2.63 EUR
120+2.36 EUR
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TGL34-91 TGL34-91 Diotec Semiconductor tgl3468.pdf Description: TVSDIODE,DO-213AA,73.7V,150W,UNI
Packaging: Strip
Package / Case: DO-213AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -50°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.1A
Voltage - Reverse Standoff (Typ): 73.7V
Supplier Device Package: DO-213AA, MINI-MELF
Unidirectional Channels: 1
Voltage - Breakdown (Min): 81.9V
Voltage - Clamping (Max) @ Ipp: 131V
Power - Peak Pulse: 150W
Power Line Protection: No
Produkt ist nicht verfügbar
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US1G US1G Diotec Semiconductor us1a.pdf Description: DIODE STANDARD 400V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 4556 Stücke:
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MMFTP3401 MMFTP3401 Diotec Semiconductor mmftp3401.pdf Description: MOSFET P-CH 30V 4A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 954 pF @ 0 V
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BZT52C5V1 BZT52C5V1 Diotec Semiconductor bzt52c2v4.pdf Description: DIODE ZENER 5.1V 500MW SOD123F
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V
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162+0.11 EUR
241+0.07 EUR
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DD1000 DD1000 Diotec Semiconductor dd300.pdf Description: DIODE STANDARD 10000V 20MA AXIAL
Packaging: Cut Tape (CT)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 20mA
Supplier Device Package: Axial
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 10000 V
Voltage - Forward (Vf) (Max) @ If: 40 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 10000 V
auf Bestellung 1968 Stücke:
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DD1800 DD1800 Diotec Semiconductor dd300.pdf Description: DIODE STANDARD 18000V 20MA AXIAL
Packaging: Cut Tape (CT)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 20mA
Supplier Device Package: Axial
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 18000 V
Voltage - Forward (Vf) (Max) @ If: 40 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 18000 V
auf Bestellung 728 Stücke:
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DI035P04PT-AQ DI035P04PT-AQ Diotec Semiconductor Description: MOSFET, POWERQFN 3X3, -40V, -35A
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2570 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
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EGL1G EGL1G Diotec Semiconductor egl1a.pdf Description: DIODE STANDARD 400V 1A DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AA (MINIMELF)
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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EGL1G EGL1G Diotec Semiconductor egl1a.pdf Description: DIODE STANDARD 400V 1A DO213AA
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AA (MINIMELF)
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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BAS40-06 BAS40-06 Diotec Semiconductor bas40.pdf Description: DIODE ARR SCHOTT 40V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Produkt ist nicht verfügbar
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BAS40-06 BAS40-06 Diotec Semiconductor bas40.pdf Description: DIODE ARR SCHOTT 40V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
auf Bestellung 817 Stücke:
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500+0.07 EUR
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P600D P600D Diotec Semiconductor p600a.pdf Description: DIODE GEN PURP 200V 6A P600
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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P600K P600K Diotec Semiconductor p600a.pdf Description: DIODE GEN PURP 800V 6A P600
Packaging: Tape & Box (TB)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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P600K P600K Diotec Semiconductor p600a.pdf Description: DIODE GEN PURP 800V 6A P600
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
auf Bestellung 228 Stücke:
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37+0.48 EUR
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ZMY18 ZMY18 Diotec Semiconductor zmy1.pdf Description: DIODE ZENER 18V 1.3W DO213AB
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-213AB (MELF)
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
Produkt ist nicht verfügbar
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ZMY18 ZMY18 Diotec Semiconductor zmy1.pdf Description: DIODE ZENER 18V 1.3W DO213AB
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-213AB (MELF)
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
auf Bestellung 4833 Stücke:
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50+0.35 EUR
75+0.24 EUR
111+0.16 EUR
500+0.12 EUR
1000+0.11 EUR
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B80D B80D Diotec Semiconductor b40d.pdf Description: 1PH BRIDGE DIL 160V 1A
Packaging: Tube
Package / Case: 4-EDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Voltage - Peak Reverse (Max): 160 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 160 V
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UF5408 UF5408 Diotec Semiconductor uf5400.pdf Description: DIODE STANDARD 1000V 3A DO201
Packaging: Cut Tape (CT)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 1122 Stücke:
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32+0.56 EUR
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KBPC10/15/2510FP KBPC10/15/2510FP Diotec Semiconductor kbpc1500fw.pdf Description: BRIDGE RECT 1P 1KV 25A KBPC FP
Packaging: Box
Package / Case: 4-Square, KBPC FP
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC FP
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 225 Stücke:
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3+6.85 EUR
10+6.15 EUR
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KBPC600 KBPC600 Diotec Semiconductor kbpc600.pdf Description: BRIDGE RECT 1P 50V 3.8A KBPC6
Packaging: Box
Package / Case: 4-Square, KBPC-6
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC6
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 3.8 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
auf Bestellung 1200 Stücke:
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100+7.57 EUR
200+4.13 EUR
400+2.27 EUR
800+2.23 EUR
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KBPC800 KBPC800 Diotec Semiconductor kbpc800.pdf Description: BRIDGE RECT 1PHASE 50V 5A KBPC8
Packaging: Box
Package / Case: 4-Square, KBPC-6
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC8
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 5 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
auf Bestellung 800 Stücke:
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100+7.80 EUR
200+4.25 EUR
400+2.34 EUR
800+2.29 EUR
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SK86 SK86 Diotec Semiconductor sk82.pdf Description: DIODE SCHOTTKY 60V 8A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Produkt ist nicht verfügbar
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SK86 SK86 Diotec Semiconductor sk82.pdf Description: DIODE SCHOTTKY 60V 8A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Produkt ist nicht verfügbar
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SBCT10100 SBCT10100 Diotec Semiconductor sbct1020.pdf Description: SchottkyD, 100V, 10A
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
auf Bestellung 2000 Stücke:
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250+3.41 EUR
500+1.92 EUR
1000+1.16 EUR
2000+1.15 EUR
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BY12 BY12 Diotec Semiconductor by4.pdf Description: DIODE GEN PURP 12000V 0.5A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: Axial
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 12000 V
Voltage - Forward (Vf) (Max) @ If: 10 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 12000 V
auf Bestellung 1000 Stücke:
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1000+2.00 EUR
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BY12 BY12 Diotec Semiconductor by4.pdf Description: DIODE GEN PURP 12000V 0.5A AXIAL
Packaging: Cut Tape (CT)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: Axial
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 12000 V
Voltage - Forward (Vf) (Max) @ If: 10 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 12000 V
auf Bestellung 2526 Stücke:
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5+4.21 EUR
10+3.50 EUR
100+2.78 EUR
500+2.35 EUR
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SMZ62 SMZ62 Diotec Semiconductor smz1.pdf Description: ZENERDIODE,MELF,62V,2W,5%
Tolerance: ±5%
Packaging: Strip
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: MELF DO-213AB
Power - Max: 2 W
Current - Reverse Leakage @ Vr: 1 µA @ 28 V
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BC849C BC849C Diotec Semiconductor bc846.pdf Description: TRANS NPN 30V 0.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 250 mW
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FX2000B FX2000B Diotec Semiconductor 1.0smbj65.pdf Description: DIODE GEN PURP 100V 20A P600
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 20 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
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P2000B P2000B Diotec Semiconductor p2000a.pdf Description: DIODE GEN PURP 100V 20A P600
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
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P2000BTL-CT P2000BTL-CT Diotec Semiconductor p2000atl.pdf Description: DIODE GEN PURP 100V 20A P600
Packaging: Strip
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
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P2000BTL P2000BTL Diotec Semiconductor p2000atl.pdf Description: DIODE GEN PURP 100V 20A P600
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
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SK310SMA SK310SMA Diotec Semiconductor sk32sma.pdf Description: DIODE SCHOTTKY 100V 3A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Produkt ist nicht verfügbar
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SK310SMA SK310SMA Diotec Semiconductor sk32sma.pdf Description: DIODE SCHOTTKY 100V 3A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
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LL103B LL103B Diotec Semiconductor ll103a.pdf Description: DIODE SCHOTTKY 30V 350MA SOD80C
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Current - Average Rectified (Io): 350mA
Supplier Device Package: SOD-80C
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 20 V
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LL103B LL103B Diotec Semiconductor ll103a.pdf Description: DIODE SCHOTTKY 30V 350MA SOD80C
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Current - Average Rectified (Io): 350mA
Supplier Device Package: SOD-80C
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 20 V
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LL4150 LL4150 Diotec Semiconductor ll4148.pdf Description: DIODE STANDARD 50V 300MA SOD80C
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: SOD-80C
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
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LL103C LL103C Diotec Semiconductor ll103a.pdf Description: DIODE SCHOTTKY 20V 350MA SOD80C
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Current - Average Rectified (Io): 350mA
Supplier Device Package: SOD-80C
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 10 V
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LL103C LL103C Diotec Semiconductor ll103a.pdf Description: DIODE SCHOTTKY 20V 350MA SOD80C
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Current - Average Rectified (Io): 350mA
Supplier Device Package: SOD-80C
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 10 V
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LL103A LL103A Diotec Semiconductor ll103a.pdf Description: DIODE SCHOTTKY 40V 350MA SOD80C
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Current - Average Rectified (Io): 350mA
Supplier Device Package: SOD-80C
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
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LL103A LL103A Diotec Semiconductor ll103a.pdf Description: DIODE SCHOTTKY 40V 350MA SOD80C
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Current - Average Rectified (Io): 350mA
Supplier Device Package: SOD-80C
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
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LDI1117-05H LDI1117-05H Diotec Semiconductor ldi1117h.pdf Description: IC REG LINEAR 5V 1.35A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1.35A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: SOT-223
Voltage - Output (Min/Fixed): 5V
PSRR: 75dB (120Hz)
Voltage Dropout (Max): 1.25V @ 1A
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
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LDI1117-05H LDI1117-05H Diotec Semiconductor ldi1117h.pdf Description: IC REG LINEAR 5V 1.35A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1.35A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: SOT-223
Voltage - Output (Min/Fixed): 5V
PSRR: 75dB (120Hz)
Voltage Dropout (Max): 1.25V @ 1A
Protection Features: Over Current, Over Temperature
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DI048N04PT-AQ DI048N04PT-AQ Diotec Semiconductor Description: MOSFET, POWERQFN 3X3, 40V, 48A,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 12A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (3x3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 48.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2268 pF @ 25 V
Qualification: AEC-Q101
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DI040P04PT-AQ DI040P04PT-AQ Diotec Semiconductor Description: MOSFET, POWERQFN 3X3, -40V, -40A
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 22.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (3x3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3538 pF @ 20 V
Qualification: AEC-Q101
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DI048N04PQ2-AQ DI048N04PQ2-AQ Diotec Semiconductor di048n04pq2.pdf Description: MOSFET 2N-CH 40V 48A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2270pF @ 20V
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TDSON-8-4
Grade: Automotive
Qualification: AEC-Q101
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DI050N04PT-AQ DI050N04PT-AQ Diotec Semiconductor Description: MOSFET, POWERQFN 3X3, 40V, 50A,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 10A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3255 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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DI070P04PQ-AQ DI070P04PQ-AQ Diotec Semiconductor di070p04pq.pdf Description: MOSFET, POWERQFN 5X6, -40V, -70A
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7560 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
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P4SMAJ8.0A P4SMAJ8.0A Diotec Semiconductor p4smaj65.pdf Description: TVSDIODE,SMA,8V,400W,UNI
Packaging: Strip
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -50°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 29.4A
Voltage - Reverse Standoff (Typ): 8V
Supplier Device Package: SMA/DO-214AC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.9V
Voltage - Clamping (Max) @ Ipp: 13.6V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
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BAV99W BAV99W Diotec Semiconductor bas16w.pdf Description: DIODE ARRAY GP 70V 200MA SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
auf Bestellung 39000 Stücke:
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BAV99W BAV99W Diotec Semiconductor bas16w.pdf Description: DIODE ARRAY GP 70V 200MA SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
auf Bestellung 41847 Stücke:
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BR100-03LLD BR100-03LLD Diotec Semiconductor br10003lld.pdf Description: DIAC/SIDAC 28-36V 2A DO-213AA
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Operating Temperature: -50°C ~ 100°C (TJ)
Voltage - Breakover: 28 ~ 36V
Current - Breakover: 50 µA
Supplier Device Package: DO-213AA (MINIMELF)
Current - Peak Output: 2 A
auf Bestellung 1100 Stücke:
Lieferzeit 10-14 Tag (e)
100+0.18 EUR
141+0.12 EUR
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500+0.06 EUR
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1.5KE170A 1.5KE170A Diotec Semiconductor 15ke68.pdf Description: TVS, 145V, 1500W Uni
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -50°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.7A
Voltage - Reverse Standoff (Typ): 145V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 162V
Voltage - Clamping (Max) @ Ipp: 234V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
auf Bestellung 1250 Stücke:
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MYS80 MYS80 Diotec Semiconductor mys40.pdf Description: 1PH BRIDGE MICRODIL 160V 0.5A
Packaging: Tape & Reel (TR)
Package / Case: 4-SOIC (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-MicroDIL
Voltage - Peak Reverse (Max): 160 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 160 V
Produkt ist nicht verfügbar
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MYS80 MYS80 Diotec Semiconductor mys40.pdf Description: 1PH BRIDGE MICRODIL 160V 0.5A
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-MicroDIL
Voltage - Peak Reverse (Max): 160 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 160 V
auf Bestellung 3883 Stücke:
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SM2000 SM2000 Diotec Semiconductor sm4001.pdf Description: DIODE STANDARD 2000V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB (MELF)
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 2000 V
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SM2000 SM2000 Diotec Semiconductor sm4001.pdf Description: DIODE STANDARD 2000V 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB (MELF)
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 2000 V
auf Bestellung 5180 Stücke:
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5KP100 5KP100 Diotec Semiconductor 5kp65.pdf Description: TVS, 100V, 5000W Uni
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -50°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 28A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 179V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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P4SMAJ33CA p4smaj65.pdf
P4SMAJ33CA
Hersteller: Diotec Semiconductor
Description: TVS DIODE 33VWM 53.3VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -50°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.5A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 400W
Power Line Protection: No
auf Bestellung 7269 Stücke:
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91+0.19 EUR
122+0.14 EUR
147+0.12 EUR
500+0.11 EUR
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ESW6006 esw6004.pdf
ESW6006
Hersteller: Diotec Semiconductor
Description: DIODE STANDARD 600V 60A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
auf Bestellung 444 Stücke:
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4+5.35 EUR
30+2.63 EUR
120+2.36 EUR
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TGL34-91 tgl3468.pdf
TGL34-91
Hersteller: Diotec Semiconductor
Description: TVSDIODE,DO-213AA,73.7V,150W,UNI
Packaging: Strip
Package / Case: DO-213AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -50°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.1A
Voltage - Reverse Standoff (Typ): 73.7V
Supplier Device Package: DO-213AA, MINI-MELF
Unidirectional Channels: 1
Voltage - Breakdown (Min): 81.9V
Voltage - Clamping (Max) @ Ipp: 131V
Power - Peak Pulse: 150W
Power Line Protection: No
Produkt ist nicht verfügbar
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US1G us1a.pdf
US1G
Hersteller: Diotec Semiconductor
Description: DIODE STANDARD 400V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 4556 Stücke:
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36+0.49 EUR
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MMFTP3401 mmftp3401.pdf
MMFTP3401
Hersteller: Diotec Semiconductor
Description: MOSFET P-CH 30V 4A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 954 pF @ 0 V
auf Bestellung 4925 Stücke:
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42+0.42 EUR
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BZT52C5V1 bzt52c2v4.pdf
BZT52C5V1
Hersteller: Diotec Semiconductor
Description: DIODE ZENER 5.1V 500MW SOD123F
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V
auf Bestellung 1979 Stücke:
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Anzahl Preis
112+0.16 EUR
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241+0.07 EUR
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DD1000 dd300.pdf
DD1000
Hersteller: Diotec Semiconductor
Description: DIODE STANDARD 10000V 20MA AXIAL
Packaging: Cut Tape (CT)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 20mA
Supplier Device Package: Axial
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 10000 V
Voltage - Forward (Vf) (Max) @ If: 40 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 10000 V
auf Bestellung 1968 Stücke:
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11+1.60 EUR
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DD1800 dd300.pdf
DD1800
Hersteller: Diotec Semiconductor
Description: DIODE STANDARD 18000V 20MA AXIAL
Packaging: Cut Tape (CT)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 20mA
Supplier Device Package: Axial
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 18000 V
Voltage - Forward (Vf) (Max) @ If: 40 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 18000 V
auf Bestellung 728 Stücke:
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11+1.74 EUR
16+1.14 EUR
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DI035P04PT-AQ
DI035P04PT-AQ
Hersteller: Diotec Semiconductor
Description: MOSFET, POWERQFN 3X3, -40V, -35A
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2570 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4585 Stücke:
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17+1.04 EUR
20+0.88 EUR
100+0.61 EUR
500+0.48 EUR
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EGL1G egl1a.pdf
EGL1G
Hersteller: Diotec Semiconductor
Description: DIODE STANDARD 400V 1A DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AA (MINIMELF)
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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EGL1G egl1a.pdf
EGL1G
Hersteller: Diotec Semiconductor
Description: DIODE STANDARD 400V 1A DO213AA
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AA (MINIMELF)
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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BAS40-06 bas40.pdf
BAS40-06
Hersteller: Diotec Semiconductor
Description: DIODE ARR SCHOTT 40V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Produkt ist nicht verfügbar
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BAS40-06 bas40.pdf
BAS40-06
Hersteller: Diotec Semiconductor
Description: DIODE ARR SCHOTT 40V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
auf Bestellung 817 Stücke:
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100+0.18 EUR
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P600D p600a.pdf
P600D
Hersteller: Diotec Semiconductor
Description: DIODE GEN PURP 200V 6A P600
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 79 Stücke:
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34+0.53 EUR
50+0.36 EUR
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P600K p600a.pdf
P600K
Hersteller: Diotec Semiconductor
Description: DIODE GEN PURP 800V 6A P600
Packaging: Tape & Box (TB)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
auf Bestellung 1500 Stücke:
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500+0.23 EUR
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P600K p600a.pdf
P600K
Hersteller: Diotec Semiconductor
Description: DIODE GEN PURP 800V 6A P600
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
auf Bestellung 228 Stücke:
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23+0.79 EUR
37+0.48 EUR
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ZMY18 zmy1.pdf
ZMY18
Hersteller: Diotec Semiconductor
Description: DIODE ZENER 18V 1.3W DO213AB
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-213AB (MELF)
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
Produkt ist nicht verfügbar
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ZMY18 zmy1.pdf
ZMY18
Hersteller: Diotec Semiconductor
Description: DIODE ZENER 18V 1.3W DO213AB
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-213AB (MELF)
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
auf Bestellung 4833 Stücke:
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50+0.35 EUR
75+0.24 EUR
111+0.16 EUR
500+0.12 EUR
1000+0.11 EUR
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B80D b40d.pdf
B80D
Hersteller: Diotec Semiconductor
Description: 1PH BRIDGE DIL 160V 1A
Packaging: Tube
Package / Case: 4-EDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Voltage - Peak Reverse (Max): 160 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 160 V
auf Bestellung 840 Stücke:
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24+0.74 EUR
50+0.55 EUR
100+0.34 EUR
500+0.32 EUR
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UF5408 uf5400.pdf
UF5408
Hersteller: Diotec Semiconductor
Description: DIODE STANDARD 1000V 3A DO201
Packaging: Cut Tape (CT)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 1122 Stücke:
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Anzahl Preis
22+0.81 EUR
32+0.56 EUR
100+0.37 EUR
500+0.33 EUR
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KBPC10/15/2510FP kbpc1500fw.pdf
KBPC10/15/2510FP
Hersteller: Diotec Semiconductor
Description: BRIDGE RECT 1P 1KV 25A KBPC FP
Packaging: Box
Package / Case: 4-Square, KBPC FP
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC FP
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 225 Stücke:
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Anzahl Preis
3+6.85 EUR
10+6.15 EUR
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KBPC600 kbpc600.pdf
KBPC600
Hersteller: Diotec Semiconductor
Description: BRIDGE RECT 1P 50V 3.8A KBPC6
Packaging: Box
Package / Case: 4-Square, KBPC-6
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC6
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 3.8 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
auf Bestellung 1200 Stücke:
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Anzahl Preis
100+7.57 EUR
200+4.13 EUR
400+2.27 EUR
800+2.23 EUR
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KBPC800 kbpc800.pdf
KBPC800
Hersteller: Diotec Semiconductor
Description: BRIDGE RECT 1PHASE 50V 5A KBPC8
Packaging: Box
Package / Case: 4-Square, KBPC-6
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC8
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 5 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
auf Bestellung 800 Stücke:
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Anzahl Preis
100+7.80 EUR
200+4.25 EUR
400+2.34 EUR
800+2.29 EUR
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SK86 sk82.pdf
SK86
Hersteller: Diotec Semiconductor
Description: DIODE SCHOTTKY 60V 8A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Produkt ist nicht verfügbar
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SK86 sk82.pdf
SK86
Hersteller: Diotec Semiconductor
Description: DIODE SCHOTTKY 60V 8A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Produkt ist nicht verfügbar
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SBCT10100 sbct1020.pdf
SBCT10100
Hersteller: Diotec Semiconductor
Description: SchottkyD, 100V, 10A
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
250+3.41 EUR
500+1.92 EUR
1000+1.16 EUR
2000+1.15 EUR
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BY12 by4.pdf
BY12
Hersteller: Diotec Semiconductor
Description: DIODE GEN PURP 12000V 0.5A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: Axial
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 12000 V
Voltage - Forward (Vf) (Max) @ If: 10 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 12000 V
auf Bestellung 1000 Stücke:
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BY12 by4.pdf
BY12
Hersteller: Diotec Semiconductor
Description: DIODE GEN PURP 12000V 0.5A AXIAL
Packaging: Cut Tape (CT)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: Axial
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 12000 V
Voltage - Forward (Vf) (Max) @ If: 10 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 12000 V
auf Bestellung 2526 Stücke:
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5+4.21 EUR
10+3.50 EUR
100+2.78 EUR
500+2.35 EUR
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SMZ62 smz1.pdf
SMZ62
Hersteller: Diotec Semiconductor
Description: ZENERDIODE,MELF,62V,2W,5%
Tolerance: ±5%
Packaging: Strip
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: MELF DO-213AB
Power - Max: 2 W
Current - Reverse Leakage @ Vr: 1 µA @ 28 V
auf Bestellung 4000 Stücke:
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Anzahl Preis
30+0.60 EUR
50+0.51 EUR
100+0.44 EUR
200+0.41 EUR
400+0.34 EUR
800+0.28 EUR
1600+0.23 EUR
3200+0.14 EUR
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BC849C bc846.pdf
BC849C
Hersteller: Diotec Semiconductor
Description: TRANS NPN 30V 0.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 250 mW
auf Bestellung 13476 Stücke:
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Anzahl Preis
112+0.16 EUR
182+0.10 EUR
296+0.06 EUR
500+0.04 EUR
1000+0.04 EUR
Mindestbestellmenge: 112
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FX2000B 1.0smbj65.pdf
FX2000B
Hersteller: Diotec Semiconductor
Description: DIODE GEN PURP 100V 20A P600
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 20 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
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P2000B p2000a.pdf
P2000B
Hersteller: Diotec Semiconductor
Description: DIODE GEN PURP 100V 20A P600
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
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P2000BTL-CT p2000atl.pdf
P2000BTL-CT
Hersteller: Diotec Semiconductor
Description: DIODE GEN PURP 100V 20A P600
Packaging: Strip
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
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P2000BTL p2000atl.pdf
P2000BTL
Hersteller: Diotec Semiconductor
Description: DIODE GEN PURP 100V 20A P600
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
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SK310SMA sk32sma.pdf
SK310SMA
Hersteller: Diotec Semiconductor
Description: DIODE SCHOTTKY 100V 3A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Produkt ist nicht verfügbar
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SK310SMA sk32sma.pdf
SK310SMA
Hersteller: Diotec Semiconductor
Description: DIODE SCHOTTKY 100V 3A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
auf Bestellung 6048 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.76 EUR
35+0.51 EUR
100+0.33 EUR
500+0.30 EUR
1000+0.29 EUR
2000+0.25 EUR
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LL103B ll103a.pdf
LL103B
Hersteller: Diotec Semiconductor
Description: DIODE SCHOTTKY 30V 350MA SOD80C
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Current - Average Rectified (Io): 350mA
Supplier Device Package: SOD-80C
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 20 V
auf Bestellung 10000 Stücke:
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Anzahl Preis
2500+0.09 EUR
5000+0.07 EUR
7500+0.07 EUR
Mindestbestellmenge: 2500
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LL103B ll103a.pdf
LL103B
Hersteller: Diotec Semiconductor
Description: DIODE SCHOTTKY 30V 350MA SOD80C
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Current - Average Rectified (Io): 350mA
Supplier Device Package: SOD-80C
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 20 V
auf Bestellung 11681 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
91+0.19 EUR
130+0.14 EUR
158+0.11 EUR
500+0.08 EUR
1000+0.07 EUR
Mindestbestellmenge: 91
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LL4150 ll4148.pdf
LL4150
Hersteller: Diotec Semiconductor
Description: DIODE STANDARD 50V 300MA SOD80C
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: SOD-80C
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
auf Bestellung 2505 Stücke:
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Anzahl Preis
112+0.16 EUR
218+0.08 EUR
309+0.06 EUR
500+0.05 EUR
1000+0.04 EUR
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LL103C ll103a.pdf
LL103C
Hersteller: Diotec Semiconductor
Description: DIODE SCHOTTKY 20V 350MA SOD80C
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Current - Average Rectified (Io): 350mA
Supplier Device Package: SOD-80C
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 10 V
auf Bestellung 2500 Stücke:
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Anzahl Preis
2500+0.04 EUR
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LL103C ll103a.pdf
LL103C
Hersteller: Diotec Semiconductor
Description: DIODE SCHOTTKY 20V 350MA SOD80C
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Current - Average Rectified (Io): 350mA
Supplier Device Package: SOD-80C
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 10 V
auf Bestellung 4769 Stücke:
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Anzahl Preis
67+0.26 EUR
114+0.15 EUR
158+0.11 EUR
500+0.08 EUR
1000+0.07 EUR
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LL103A ll103a.pdf
LL103A
Hersteller: Diotec Semiconductor
Description: DIODE SCHOTTKY 40V 350MA SOD80C
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Current - Average Rectified (Io): 350mA
Supplier Device Package: SOD-80C
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
auf Bestellung 2500 Stücke:
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Anzahl Preis
2500+0.10 EUR
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LL103A ll103a.pdf
LL103A
Hersteller: Diotec Semiconductor
Description: DIODE SCHOTTKY 40V 350MA SOD80C
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Current - Average Rectified (Io): 350mA
Supplier Device Package: SOD-80C
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
auf Bestellung 3344 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
82+0.22 EUR
110+0.16 EUR
500+0.14 EUR
1000+0.12 EUR
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LDI1117-05H ldi1117h.pdf
LDI1117-05H
Hersteller: Diotec Semiconductor
Description: IC REG LINEAR 5V 1.35A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1.35A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: SOT-223
Voltage - Output (Min/Fixed): 5V
PSRR: 75dB (120Hz)
Voltage Dropout (Max): 1.25V @ 1A
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
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LDI1117-05H ldi1117h.pdf
LDI1117-05H
Hersteller: Diotec Semiconductor
Description: IC REG LINEAR 5V 1.35A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1.35A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: SOT-223
Voltage - Output (Min/Fixed): 5V
PSRR: 75dB (120Hz)
Voltage Dropout (Max): 1.25V @ 1A
Protection Features: Over Current, Over Temperature
auf Bestellung 797 Stücke:
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Anzahl Preis
31+0.58 EUR
49+0.36 EUR
59+0.30 EUR
100+0.23 EUR
250+0.19 EUR
500+0.17 EUR
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DI048N04PT-AQ
DI048N04PT-AQ
Hersteller: Diotec Semiconductor
Description: MOSFET, POWERQFN 3X3, 40V, 48A,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 12A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (3x3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 48.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2268 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 4275 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.48 EUR
18+0.99 EUR
100+0.68 EUR
500+0.54 EUR
1000+0.50 EUR
2000+0.46 EUR
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DI040P04PT-AQ
DI040P04PT-AQ
Hersteller: Diotec Semiconductor
Description: MOSFET, POWERQFN 3X3, -40V, -40A
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 22.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (3x3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3538 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 4985 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.06 EUR
14+1.29 EUR
100+0.85 EUR
500+0.66 EUR
1000+0.60 EUR
2000+0.55 EUR
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DI048N04PQ2-AQ di048n04pq2.pdf
DI048N04PQ2-AQ
Hersteller: Diotec Semiconductor
Description: MOSFET 2N-CH 40V 48A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2270pF @ 20V
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TDSON-8-4
Grade: Automotive
Qualification: AEC-Q101
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Anzahl Preis
10+1.87 EUR
14+1.26 EUR
100+0.88 EUR
500+0.70 EUR
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2000+0.60 EUR
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DI050N04PT-AQ
DI050N04PT-AQ
Hersteller: Diotec Semiconductor
Description: MOSFET, POWERQFN 3X3, 40V, 50A,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 10A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3255 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4930 Stücke:
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11+1.62 EUR
18+1.00 EUR
100+0.65 EUR
500+0.50 EUR
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DI070P04PQ-AQ di070p04pq.pdf
DI070P04PQ-AQ
Hersteller: Diotec Semiconductor
Description: MOSFET, POWERQFN 5X6, -40V, -70A
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7560 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4600 Stücke:
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7+2.82 EUR
10+1.92 EUR
100+1.36 EUR
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P4SMAJ8.0A p4smaj65.pdf
P4SMAJ8.0A
Hersteller: Diotec Semiconductor
Description: TVSDIODE,SMA,8V,400W,UNI
Packaging: Strip
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -50°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 29.4A
Voltage - Reverse Standoff (Typ): 8V
Supplier Device Package: SMA/DO-214AC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.9V
Voltage - Clamping (Max) @ Ipp: 13.6V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
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BAV99W bas16w.pdf
BAV99W
Hersteller: Diotec Semiconductor
Description: DIODE ARRAY GP 70V 200MA SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
auf Bestellung 39000 Stücke:
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3000+0.04 EUR
6000+0.04 EUR
9000+0.03 EUR
15000+0.03 EUR
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BAV99W bas16w.pdf
BAV99W
Hersteller: Diotec Semiconductor
Description: DIODE ARRAY GP 70V 200MA SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
auf Bestellung 41847 Stücke:
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91+0.19 EUR
134+0.13 EUR
219+0.08 EUR
500+0.07 EUR
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BR100-03LLD br10003lld.pdf
BR100-03LLD
Hersteller: Diotec Semiconductor
Description: DIAC/SIDAC 28-36V 2A DO-213AA
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Operating Temperature: -50°C ~ 100°C (TJ)
Voltage - Breakover: 28 ~ 36V
Current - Breakover: 50 µA
Supplier Device Package: DO-213AA (MINIMELF)
Current - Peak Output: 2 A
auf Bestellung 1100 Stücke:
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100+0.18 EUR
141+0.12 EUR
211+0.08 EUR
500+0.06 EUR
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1.5KE170A 15ke68.pdf
1.5KE170A
Hersteller: Diotec Semiconductor
Description: TVS, 145V, 1500W Uni
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -50°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.7A
Voltage - Reverse Standoff (Typ): 145V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 162V
Voltage - Clamping (Max) @ Ipp: 234V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
auf Bestellung 1250 Stücke:
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250+2.55 EUR
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1250+0.56 EUR
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MYS80 mys40.pdf
MYS80
Hersteller: Diotec Semiconductor
Description: 1PH BRIDGE MICRODIL 160V 0.5A
Packaging: Tape & Reel (TR)
Package / Case: 4-SOIC (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-MicroDIL
Voltage - Peak Reverse (Max): 160 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 160 V
Produkt ist nicht verfügbar
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MYS80 mys40.pdf
MYS80
Hersteller: Diotec Semiconductor
Description: 1PH BRIDGE MICRODIL 160V 0.5A
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-MicroDIL
Voltage - Peak Reverse (Max): 160 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 160 V
auf Bestellung 3883 Stücke:
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35+0.51 EUR
52+0.34 EUR
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SM2000 sm4001.pdf
SM2000
Hersteller: Diotec Semiconductor
Description: DIODE STANDARD 2000V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB (MELF)
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 2000 V
auf Bestellung 5000 Stücke:
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5000+0.15 EUR
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SM2000 sm4001.pdf
SM2000
Hersteller: Diotec Semiconductor
Description: DIODE STANDARD 2000V 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB (MELF)
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 2000 V
auf Bestellung 5180 Stücke:
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25+0.72 EUR
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5KP100 5kp65.pdf
5KP100
Hersteller: Diotec Semiconductor
Description: TVS, 100V, 5000W Uni
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -50°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 28A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 179V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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