Produkte > DIOTEC SEMICONDUCTOR > Alle Produkte des Herstellers DIOTEC SEMICONDUCTOR (32529) > Seite 537 nach 543
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30CTQ045-AQ | DIOTEC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; TO220AB; tube Type of diode: Schottky rectifying Case: TO220AB Mounting: THT Max. off-state voltage: 45V Load current: 15A x2 Semiconductor structure: common cathode; double Kind of package: tube Max. forward impulse current: 265A Application: automotive industry Capacitance: 900pF |
Produkt ist nicht verfügbar |
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30CTQ045S | DIOTEC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 30A; reel,tape Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 45V Load current: 30A Semiconductor structure: common cathode; double Kind of package: reel; tape Max. forward impulse current: 290A Features of semiconductor devices: high temperature Capacitance: 900pF Max. forward voltage: 0.62V |
Produkt ist nicht verfügbar |
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1N4151 | DIOTEC SEMICONDUCTOR |
![]() Description: Diode: switching; THT; 75V; 0.2A; Ammo Pack; Ifsm: 2A; DO35; Ufmax: 1V Type of diode: switching Mounting: THT Max. off-state voltage: 75V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: DO35 Max. forward voltage: 1V Max. forward impulse current: 2A Power dissipation: 0.5W Kind of package: Ammo Pack Max. load current: 0.5A |
auf Bestellung 3409 Stücke: Lieferzeit 14-21 Tag (e) |
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LDI75L12UA | DIOTEC SEMICONDUCTOR |
![]() Description: IC: voltage regulator; linear,fixed; 12V; 0.1A; SOT89; SMD; ±2% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 55mV Output voltage: 12V Output current: 0.1A Case: SOT89 Mounting: SMD Manufacturer series: LDI75LxxUA Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 14...40V Kind of package: reel; tape |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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ZPD12 | DIOTEC SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.5W; 12V; Ammo Pack; DO35; single diode; ZPD Type of diode: Zener Power dissipation: 0.5W Zener voltage: 12V Kind of package: Ammo Pack Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: ZPD |
auf Bestellung 6565 Stücke: Lieferzeit 14-21 Tag (e) |
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ZPD12B | DIOTEC SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.5W; 12V; 32mA; Ammo Pack; DO35; single diode; ZPDxxB Type of diode: Zener Power dissipation: 0.5W Zener voltage: 12V Zener current: 32mA Kind of package: Ammo Pack Case: DO35 Mounting: THT Tolerance: ±2% Semiconductor structure: single diode Manufacturer series: ZPDxxB |
auf Bestellung 6300 Stücke: Lieferzeit 14-21 Tag (e) |
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3EZ120 | DIOTEC SEMICONDUCTOR |
![]() Description: Diode: Zener; 3W; 120V; Ammo Pack; DO15; single diode; 3EZ Type of diode: Zener Power dissipation: 3W Zener voltage: 120V Kind of package: Ammo Pack Case: DO15 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 3EZ |
auf Bestellung 2775 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS19 | DIOTEC SEMICONDUCTOR |
![]() Description: Diode: switching; SMD; 120V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; 250mW Type of diode: switching Mounting: SMD Max. off-state voltage: 120V Load current: 0.2A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SOT23 Kind of package: reel; tape Max. load current: 0.625A Power dissipation: 0.25W Max. forward voltage: 1.25V Max. forward impulse current: 2.5A |
auf Bestellung 4400 Stücke: Lieferzeit 14-21 Tag (e) |
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GBU4D-T | DIOTEC SEMICONDUCTOR |
![]() Description: Bridge rectifier: single-phase; Urmax: 200V; If: 4A; Ifsm: 135A Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 4A Max. forward impulse current: 135A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: UL approval |
Produkt ist nicht verfügbar |
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SK4060CD2-3G | DIOTEC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; D2PAK; SMD; 60V; 20Ax2; tube Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 60V Load current: 20A x2 Semiconductor structure: common cathode; double Capacitance: 640pF Max. forward voltage: 0.62V Max. forward impulse current: 290A Kind of package: tube |
Produkt ist nicht verfügbar |
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3.0SMCJ85CA | DIOTEC SEMICONDUCTOR |
![]() Description: Diode: TVS; 3kW; 94.4÷105V; 21.9A; bidirectional; ±5%; SMC; 3.0SMCJ Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 85V Breakdown voltage: 94.4...105V Max. forward impulse current: 21.9A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Manufacturer series: 3.0SMCJ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
5.0SMCJ85CA | DIOTEC SEMICONDUCTOR |
![]() Description: Diode: TVS; 5kW; 94.4÷104V; 36.5A; bidirectional; ±5%; SMC; 5.0SMCJ Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 85V Breakdown voltage: 94.4...104V Max. forward impulse current: 36.5A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMC Mounting: SMD Leakage current: 2µA Kind of package: reel; tape Manufacturer series: 5.0SMCJ |
Produkt ist nicht verfügbar |
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FX2000D | DIOTEC SEMICONDUCTOR |
![]() Description: Diode: rectifying; THT; 200V; 20A; Ammo Pack; Ifsm: 650A; Ø8x7,5mm Kind of package: Ammo Pack Features of semiconductor devices: fast switching Mounting: THT Case: Ø8x7,5mm Type of diode: rectifying Semiconductor structure: single diode Reverse recovery time: 200ns Leakage current: 5µA Max. forward voltage: 0.82V Load current: 20A Max. off-state voltage: 200V Max. load current: 70A Max. forward impulse current: 0.65kA |
auf Bestellung 8197 Stücke: Lieferzeit 14-21 Tag (e) |
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FX2000F | DIOTEC SEMICONDUCTOR |
![]() Description: Diode: rectifying; THT; 300V; 20A; Ammo Pack; Ifsm: 650A; Ø8x7,5mm Kind of package: Ammo Pack Features of semiconductor devices: fast switching Mounting: THT Case: Ø8x7,5mm Type of diode: rectifying Semiconductor structure: single diode Reverse recovery time: 200ns Leakage current: 5µA Max. forward voltage: 0.82V Load current: 20A Max. off-state voltage: 300V Max. load current: 70A Max. forward impulse current: 0.65kA |
auf Bestellung 761 Stücke: Lieferzeit 14-21 Tag (e) |
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FX2000A | DIOTEC SEMICONDUCTOR |
![]() Description: Diode: rectifying; THT; 50V; 20A; Ammo Pack; Ifsm: 650A; Ø8x7,5mm Kind of package: Ammo Pack Features of semiconductor devices: fast switching Mounting: THT Case: Ø8x7,5mm Type of diode: rectifying Semiconductor structure: single diode Reverse recovery time: 200ns Leakage current: 5µA Max. forward voltage: 0.82V Load current: 20A Max. off-state voltage: 50V Max. load current: 70A Max. forward impulse current: 0.65kA |
auf Bestellung 529 Stücke: Lieferzeit 14-21 Tag (e) |
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FX2000B | DIOTEC SEMICONDUCTOR |
![]() Description: Diode: rectifying; THT; 100V; 20A; Ammo Pack; Ifsm: 650A; Ø8x7,5mm Kind of package: Ammo Pack Features of semiconductor devices: fast switching Mounting: THT Case: Ø8x7,5mm Type of diode: rectifying Semiconductor structure: single diode Reverse recovery time: 200ns Leakage current: 5µA Max. forward voltage: 0.82V Load current: 20A Max. off-state voltage: 100V Max. load current: 70A Max. forward impulse current: 0.65kA |
auf Bestellung 1233 Stücke: Lieferzeit 14-21 Tag (e) |
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BZW06-26 | DIOTEC SEMICONDUCTOR |
![]() Description: Diode: TVS; 600W; 30V; unidirectional; ±5%; DO15; Ammo Pack; BZW06 Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 25.6V Breakdown voltage: 30V Semiconductor structure: unidirectional Tolerance: ±5% Case: DO15 Mounting: THT Leakage current: 5µA Kind of package: Ammo Pack Manufacturer series: BZW06 |
auf Bestellung 4960 Stücke: Lieferzeit 14-21 Tag (e) |
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TGL41-30CA | DIOTEC SEMICONDUCTOR |
![]() Description: Diode: TVS; 400W; 30V; 10A; bidirectional; ±5%; MELF plastic Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 25.6V Breakdown voltage: 30V Max. forward impulse current: 10A Semiconductor structure: bidirectional Tolerance: ±5% Case: MELF plastic Mounting: SMD Leakage current: 5µA Kind of package: reel; tape |
auf Bestellung 731 Stücke: Lieferzeit 14-21 Tag (e) |
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P4KE30A | DIOTEC SEMICONDUCTOR |
![]() Description: Diode: TVS; 400W; 30V; 10A; unidirectional; ±5%; DO15; Ammo Pack Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 25.6V Breakdown voltage: 30V Max. forward impulse current: 10A Semiconductor structure: unidirectional Case: DO15 Mounting: THT Manufacturer series: P4KE Leakage current: 5µA Tolerance: ±5% Kind of package: Ammo Pack |
auf Bestellung 1824 Stücke: Lieferzeit 14-21 Tag (e) |
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LL4148 | DIOTEC SEMICONDUCTOR |
![]() Description: Diode: switching; SMD; 100V; 0.15A; 4ns; MiniMELF glass; Ufmax: 1.1V Type of diode: switching Power dissipation: 0.5W Mounting: SMD Kind of package: reel; tape Case: MiniMELF glass Semiconductor structure: single diode Features of semiconductor devices: superfast switching Capacitance: 4pF Reverse recovery time: 4ns Leakage current: 50µA Load current: 0.15A Max. load current: 0.5A Max. forward voltage: 1.1V Max. forward impulse current: 2A Max. off-state voltage: 100V |
auf Bestellung 740721 Stücke: Lieferzeit 14-21 Tag (e) |
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P4SMAJ150A | DIOTEC SEMICONDUCTOR |
![]() Description: Diode: TVS; 400W; 167÷185V; unidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 150V Breakdown voltage: 167...185V Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA Mounting: SMD Kind of package: reel; tape Manufacturer series: P4SMAJ Leakage current: 5µA |
Produkt ist nicht verfügbar |
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P6SMBJ7.0CA | DIOTEC SEMICONDUCTOR |
![]() Description: Diode: TVS; 600W; 7.8÷8.7V; 50A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 7V Breakdown voltage: 7.8...8.7V Max. forward impulse current: 50A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 0.2mA Kind of package: reel; tape Manufacturer series: P6SMBJ Tolerance: ±5% |
auf Bestellung 2740 Stücke: Lieferzeit 14-21 Tag (e) |
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P6SMBJ7.5CA | DIOTEC SEMICONDUCTOR |
![]() Description: Diode: TVS; 600W; 8.3÷9.2V; 42A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 7.5V Breakdown voltage: 8.3...9.2V Max. forward impulse current: 42A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 0.1mA Kind of package: reel; tape Manufacturer series: P6SMBJ Tolerance: ±5% |
auf Bestellung 2980 Stücke: Lieferzeit 14-21 Tag (e) |
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ESD5Z12 | DIOTEC SEMICONDUCTOR |
![]() Description: Diode: TVS; 204W; 14.1V; 9.6A; unidirectional; SOD523F; reel,tape Type of diode: TVS Max. off-state voltage: 12V Breakdown voltage: 14.1V Semiconductor structure: unidirectional Case: SOD523F Mounting: SMD Kind of package: reel; tape Peak pulse power dissipation: 204W Version: ESD Leakage current: 10nA Max. forward impulse current: 9.6A |
auf Bestellung 2625 Stücke: Lieferzeit 14-21 Tag (e) |
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ESD5Z12-AQ | DIOTEC SEMICONDUCTOR |
![]() Description: Diode: TVS; 204W; 14.1V; 9.6A; unidirectional; SOD523F; reel,tape Type of diode: TVS Max. off-state voltage: 12V Breakdown voltage: 14.1V Semiconductor structure: unidirectional Case: SOD523F Mounting: SMD Kind of package: reel; tape Application: automotive industry Peak pulse power dissipation: 204W Version: ESD Leakage current: 10nA Max. forward impulse current: 9.6A |
auf Bestellung 2850 Stücke: Lieferzeit 14-21 Tag (e) |
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P4SMAJ40CA-AQ | DIOTEC SEMICONDUCTOR |
![]() Description: Diode: TVS; 400W; 44.4÷49.3V; 6.2A; bidirectional; ±5%; SMA; P4SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 40V Breakdown voltage: 44.4...49.3V Max. forward impulse current: 6.2A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMA Mounting: SMD Kind of package: reel; tape Manufacturer series: P4SMAJ Leakage current: 5µA Application: automotive industry |
Produkt ist nicht verfügbar |
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P4SMAJ40CA | DIOTEC SEMICONDUCTOR |
![]() Description: Diode: TVS; 400W; 44.4÷49.3V; bidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 40V Breakdown voltage: 44.4...49.3V Semiconductor structure: bidirectional Tolerance: ±5% Case: SMA Mounting: SMD Kind of package: reel; tape Manufacturer series: P4SMAJ Leakage current: 5µA |
Produkt ist nicht verfügbar |
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ZY6.2 | DIOTEC SEMICONDUCTOR |
![]() Description: Diode: Zener; 2W; 6.2V; 303mA; Ammo Pack; DO41; single diode; ZY Type of diode: Zener Power dissipation: 2W Zener voltage: 6.2V Zener current: 303mA Kind of package: Ammo Pack Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: ZY |
auf Bestellung 1045 Stücke: Lieferzeit 14-21 Tag (e) |
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ZMM6.2 | DIOTEC SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.5W; 6.2V; SMD; reel,tape; MiniMELF glass,SOD80C Type of diode: Zener Power dissipation: 0.5W Zener voltage: 6.2V Kind of package: reel; tape Case: MiniMELF glass; SOD80C Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: ZMM |
auf Bestellung 7230 Stücke: Lieferzeit 14-21 Tag (e) |
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3EZ6.2 | DIOTEC SEMICONDUCTOR |
![]() Description: Diode: Zener; 3W; 6.2V; 455mA; Ammo Pack; DO15; single diode; 3EZ Type of diode: Zener Power dissipation: 3W Zener voltage: 6.2V Zener current: 455mA Kind of package: Ammo Pack Case: DO15 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 3EZ |
auf Bestellung 1351 Stücke: Lieferzeit 14-21 Tag (e) |
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SMZ6.2 | DIOTEC SEMICONDUCTOR |
![]() Description: Diode: Zener; 2W; 6.2V; 303mA; SMD; reel,tape; MELF plastic; SMZ Type of diode: Zener Power dissipation: 2W Zener voltage: 6.2V Zener current: 303mA Kind of package: reel; tape Case: MELF plastic Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: SMZ |
auf Bestellung 4847 Stücke: Lieferzeit 14-21 Tag (e) |
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ZMC6.2 | DIOTEC SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.5W; 6.2V; 76mA; SMD; reel,tape; MicroMELF quadro Type of diode: Zener Power dissipation: 0.5W Zener voltage: 6.2V Zener current: 76mA Kind of package: reel; tape Case: MicroMELF quadro Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: ZMC |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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SZ3C6.2 | DIOTEC SEMICONDUCTOR |
![]() Description: Diode: Zener; 3W; 6.2V; 455mA; SMD; reel,tape; MELF plastic; SZ3C Type of diode: Zener Power dissipation: 3W Zener voltage: 6.2V Zener current: 455mA Kind of package: reel; tape Case: MELF plastic Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: SZ3C |
auf Bestellung 4645 Stücke: Lieferzeit 14-21 Tag (e) |
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Z1SMA6.2 | DIOTEC SEMICONDUCTOR |
![]() Description: Diode: Zener; 1W; 6.2V; 152mA; SMD; reel,tape; SMA; single diode Type of diode: Zener Power dissipation: 1W Zener voltage: 6.2V Zener current: 152mA Kind of package: reel; tape Case: SMA Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: Z1SMA |
auf Bestellung 4148 Stücke: Lieferzeit 14-21 Tag (e) |
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DI280N10TL | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 194A; Idm: 1.2kA; 425W; HSOF-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 194A Pulsed drain current: 1.2kA Power dissipation: 425W Case: HSOF-8 Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: SMD Gate charge: 122nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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DI080N10D1 | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 50A; Idm: 400A; 56.8W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 50A Pulsed drain current: 400A Power dissipation: 56.8W Case: DPAK Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: SMD Gate charge: 75nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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DI068N03PQ | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 43A; Idm: 210A; 25W; QFN5x6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 43A Power dissipation: 25W Case: QFN5x6 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: SMD Gate charge: 79nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 210A |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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DI115N06PQ | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 72.5A; Idm: 480A; 78.9W; QFN5x6 Case: QFN5x6 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 480A Drain current: 72.5A Drain-source voltage: 60V Gate charge: 13nC On-state resistance: 3.6mΩ Polarisation: unipolar Gate-source voltage: ±20V Power dissipation: 78.9W Type of transistor: N-MOSFET Kind of channel: enhancement |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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DI110N03PQ-AQ | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 70A; Idm: 420A; 35W; QFN5x6 Case: QFN5x6 Mounting: SMD Kind of package: reel; tape Application: automotive industry Pulsed drain current: 420A Drain current: 70A Drain-source voltage: 30V Gate charge: 163nC On-state resistance: 2.5mΩ Polarisation: unipolar Gate-source voltage: ±20V Power dissipation: 35W Type of transistor: N-MOSFET Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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DI045N10PQ-AQ | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 39A; Idm: 400A; 40W; QFN5x6 Case: QFN5x6 Mounting: SMD Kind of package: reel; tape Application: automotive industry Pulsed drain current: 400A Drain current: 39A Drain-source voltage: 100V Gate charge: 56nC On-state resistance: 9mΩ Polarisation: unipolar Gate-source voltage: ±20V Power dissipation: 40W Type of transistor: N-MOSFET Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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DI070P04PQ | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -40V; -70A; Idm: -300A; 46W; QFN5x6 Case: QFN5x6 Mounting: SMD Kind of package: reel; tape Pulsed drain current: -300A Drain current: -70A Drain-source voltage: -40V Gate charge: 125nC On-state resistance: 6.5mΩ Polarisation: unipolar Gate-source voltage: ±20V Power dissipation: 46W Type of transistor: P-MOSFET Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
DI022N20PQ-AQ | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 13A; Idm: 80A; 60W; QFN5x6 Case: QFN5x6 Mounting: SMD Kind of package: reel; tape Application: automotive industry Pulsed drain current: 80A Drain current: 13A Drain-source voltage: 200V Gate charge: 16nC On-state resistance: 50mΩ Polarisation: unipolar Gate-source voltage: ±20V Power dissipation: 60W Type of transistor: N-MOSFET Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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DI022N20PQ | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 13A; Idm: 80A; 60W; QFN5x6 Case: QFN5x6 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 80A Drain current: 13A Drain-source voltage: 200V Gate charge: 16nC On-state resistance: 50mΩ Polarisation: unipolar Gate-source voltage: ±20V Power dissipation: 60W Type of transistor: N-MOSFET Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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DI017N06PQ-AQ | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 50A; 21W; QFN5x6 Case: QFN5x6 Mounting: SMD Kind of package: reel; tape Application: automotive industry Pulsed drain current: 50A Drain current: 10A Drain-source voltage: 60V Gate charge: 19nC On-state resistance: 39mΩ Polarisation: unipolar Gate-source voltage: ±20V Power dissipation: 21W Type of transistor: N-MOSFET Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
DI017N06PQ | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 50A; 21W; QFN5x6 Case: QFN5x6 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 50A Drain current: 10A Drain-source voltage: 60V Gate charge: 19nC On-state resistance: 39mΩ Polarisation: unipolar Gate-source voltage: ±20V Power dissipation: 21W Type of transistor: N-MOSFET Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
DI025N20PQ | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 20A; Idm: 100A; 135W; QFN5x6 Case: QFN5x6 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 100A Drain current: 20A Drain-source voltage: 200V Gate charge: 28nC On-state resistance: 48mΩ Polarisation: unipolar Gate-source voltage: ±20V Power dissipation: 135W Type of transistor: N-MOSFET Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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DI068N03PQ-AQ | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 43A; Idm: 210A; 25W; QFN5x6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 43A Power dissipation: 25W Case: QFN5x6 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: SMD Gate charge: 79nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 210A Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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DI070P04PQ-AQ | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -40V; -70A; Idm: -300A; 46W; QFN5x6 Case: QFN5x6 Mounting: SMD Kind of package: reel; tape Application: automotive industry Pulsed drain current: -300A Drain current: -70A Drain-source voltage: -40V Gate charge: 125nC On-state resistance: 6.5mΩ Polarisation: unipolar Gate-source voltage: ±20V Power dissipation: 46W Type of transistor: P-MOSFET Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
DI075N08PQ | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 47A; Idm: 350A; 45W; QFN5x6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 47A Pulsed drain current: 350A Power dissipation: 45W Case: QFN5x6 Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: SMD Gate charge: 89nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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DI080N03PQ | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 75A; Idm: 160A; 78W; QFN5x6 Case: QFN5x6 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 160A Drain current: 75A Drain-source voltage: 30V Gate charge: 21nC On-state resistance: 1.9mΩ Polarisation: unipolar Gate-source voltage: ±20V Power dissipation: 78W Type of transistor: N-MOSFET Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
DI100N10PQ-AQ | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 50A; Idm: 480A; 60W; QFN5x6 Case: QFN5x6 Mounting: SMD Kind of package: reel; tape Application: automotive industry Pulsed drain current: 480A Drain current: 50A Drain-source voltage: 100V Gate charge: 75nC On-state resistance: 6.6mΩ Polarisation: unipolar Gate-source voltage: ±20V Power dissipation: 60W Type of transistor: N-MOSFET Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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DI110N03PQ | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 70A; Idm: 420A; 35W; QFN5x6 Case: QFN5x6 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 420A Drain current: 70A Drain-source voltage: 30V Gate charge: 163nC On-state resistance: 2.5mΩ Polarisation: unipolar Gate-source voltage: ±20V Power dissipation: 35W Type of transistor: N-MOSFET Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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DI110N04PQ-AQ | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 110A; Idm: 400A; 42W; QFN5x6 Case: QFN5x6 Mounting: SMD Kind of package: reel; tape Application: automotive industry Pulsed drain current: 400A Drain current: 110A Drain-source voltage: 40V Gate charge: 59nC On-state resistance: 2.9mΩ Polarisation: unipolar Gate-source voltage: ±20V Power dissipation: 42W Type of transistor: N-MOSFET Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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DI110N04PQ | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 110A; Idm: 400A; 42W; QFN5x6 Case: QFN5x6 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 400A Drain current: 110A Drain-source voltage: 40V Gate charge: 59nC On-state resistance: 2.9mΩ Polarisation: unipolar Gate-source voltage: ±20V Power dissipation: 42W Type of transistor: N-MOSFET Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
DI200N04PQ | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 165A; Idm: 800A; 180W; QFN5x6 Case: QFN5x6 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 800A Drain current: 165A Drain-source voltage: 40V Gate charge: 92nC On-state resistance: 1.3mΩ Polarisation: unipolar Gate-source voltage: ±20V Power dissipation: 180W Type of transistor: N-MOSFET Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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BC847BR13 | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; 45V; 0.1A; 250mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.25W Case: SOT23 Current gain: 200...450 Mounting: SMD Kind of package: 13 inch reel; tape Frequency: 300MHz Pulsed collector current: 0.2A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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SMF8.5A | DIOTEC SEMICONDUCTOR |
![]() Description: Diode: TVS; 200W; 9.4÷10.4V; 13.89A; unidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.2kW Max. off-state voltage: 8.5V Breakdown voltage: 9.4...10.4V Max. forward impulse current: 13.89A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMF; SOD123F Mounting: SMD Leakage current: 10µA Kind of package: reel; tape Manufacturer series: SMF |
auf Bestellung 1935 Stücke: Lieferzeit 14-21 Tag (e) |
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LL4151 | DIOTEC SEMICONDUCTOR |
![]() Description: Diode: switching; SMD; 75V; 0.2A; 4ns; MiniMELF glass; Ufmax: 1V Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.2A Semiconductor structure: single diode Case: MiniMELF glass Max. load current: 0.5A Max. forward impulse current: 2A Kind of package: reel; tape Features of semiconductor devices: superfast switching Capacitance: 4pF Reverse recovery time: 4ns Leakage current: 50µA Power dissipation: 0.5W Max. forward voltage: 1V |
auf Bestellung 8650 Stücke: Lieferzeit 14-21 Tag (e) |
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DI330N04D7 | DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 330A; Idm: 1.4A; 375W; D2PAK-7 Case: D2PAK-7 Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 157nC On-state resistance: 0.75mΩ Power dissipation: 375W Pulsed drain current: 1.4A Drain current: 330A Gate-source voltage: ±20V Drain-source voltage: 40V Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
GBU6K-LV | DIOTEC SEMICONDUCTOR |
![]() Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 270A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 6A Max. forward impulse current: 270A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: in-tray Max. forward voltage: 0.92V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
30CTQ045-AQ |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Max. forward impulse current: 265A
Application: automotive industry
Capacitance: 900pF
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Max. forward impulse current: 265A
Application: automotive industry
Capacitance: 900pF
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
30CTQ045S |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 30A; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 30A
Semiconductor structure: common cathode; double
Kind of package: reel; tape
Max. forward impulse current: 290A
Features of semiconductor devices: high temperature
Capacitance: 900pF
Max. forward voltage: 0.62V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 30A; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 30A
Semiconductor structure: common cathode; double
Kind of package: reel; tape
Max. forward impulse current: 290A
Features of semiconductor devices: high temperature
Capacitance: 900pF
Max. forward voltage: 0.62V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
1N4151 |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: switching; THT; 75V; 0.2A; Ammo Pack; Ifsm: 2A; DO35; Ufmax: 1V
Type of diode: switching
Mounting: THT
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: Ammo Pack
Max. load current: 0.5A
Category: THT universal diodes
Description: Diode: switching; THT; 75V; 0.2A; Ammo Pack; Ifsm: 2A; DO35; Ufmax: 1V
Type of diode: switching
Mounting: THT
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: Ammo Pack
Max. load current: 0.5A
auf Bestellung 3409 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
581+ | 0.12 EUR |
926+ | 0.077 EUR |
1163+ | 0.061 EUR |
2233+ | 0.032 EUR |
3312+ | 0.022 EUR |
3409+ | 0.021 EUR |
LDI75L12UA |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 0.1A; SOT89; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 55mV
Output voltage: 12V
Output current: 0.1A
Case: SOT89
Mounting: SMD
Manufacturer series: LDI75LxxUA
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 14...40V
Kind of package: reel; tape
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 0.1A; SOT89; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 55mV
Output voltage: 12V
Output current: 0.1A
Case: SOT89
Mounting: SMD
Manufacturer series: LDI75LxxUA
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 14...40V
Kind of package: reel; tape
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
876+ | 0.082 EUR |
1000+ | 0.072 EUR |
ZPD12 |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; Ammo Pack; DO35; single diode; ZPD
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: ZPD
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; Ammo Pack; DO35; single diode; ZPD
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: ZPD
auf Bestellung 6565 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
585+ | 0.12 EUR |
1352+ | 0.053 EUR |
1909+ | 0.037 EUR |
2404+ | 0.03 EUR |
2646+ | 0.027 EUR |
4855+ | 0.015 EUR |
5103+ | 0.014 EUR |
ZPD12B |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; 32mA; Ammo Pack; DO35; single diode; ZPDxxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Zener current: 32mA
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Manufacturer series: ZPDxxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; 32mA; Ammo Pack; DO35; single diode; ZPDxxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Zener current: 32mA
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Manufacturer series: ZPDxxB
auf Bestellung 6300 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1900+ | 0.038 EUR |
3125+ | 0.023 EUR |
3950+ | 0.018 EUR |
4550+ | 0.016 EUR |
4825+ | 0.015 EUR |
3EZ120 |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 3W; 120V; Ammo Pack; DO15; single diode; 3EZ
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 120V
Kind of package: Ammo Pack
Case: DO15
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 3EZ
Category: THT Zener diodes
Description: Diode: Zener; 3W; 120V; Ammo Pack; DO15; single diode; 3EZ
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 120V
Kind of package: Ammo Pack
Case: DO15
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 3EZ
auf Bestellung 2775 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
417+ | 0.17 EUR |
556+ | 0.13 EUR |
630+ | 0.11 EUR |
719+ | 0.1 EUR |
1087+ | 0.066 EUR |
1150+ | 0.062 EUR |
BAS19 |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 120V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; 250mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 120V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOT23
Kind of package: reel; tape
Max. load current: 0.625A
Power dissipation: 0.25W
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Category: SMD universal diodes
Description: Diode: switching; SMD; 120V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; 250mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 120V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOT23
Kind of package: reel; tape
Max. load current: 0.625A
Power dissipation: 0.25W
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
auf Bestellung 4400 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1750+ | 0.041 EUR |
2925+ | 0.025 EUR |
3650+ | 0.02 EUR |
4175+ | 0.017 EUR |
4400+ | 0.016 EUR |
GBU4D-T |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 4A; Ifsm: 135A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 4A
Max. forward impulse current: 135A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: UL approval
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 4A; Ifsm: 135A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 4A
Max. forward impulse current: 135A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: UL approval
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SK4060CD2-3G |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 60V; 20Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 60V
Load current: 20A x2
Semiconductor structure: common cathode; double
Capacitance: 640pF
Max. forward voltage: 0.62V
Max. forward impulse current: 290A
Kind of package: tube
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 60V; 20Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 60V
Load current: 20A x2
Semiconductor structure: common cathode; double
Capacitance: 640pF
Max. forward voltage: 0.62V
Max. forward impulse current: 290A
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
3.0SMCJ85CA |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 94.4÷105V; 21.9A; bidirectional; ±5%; SMC; 3.0SMCJ
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...105V
Max. forward impulse current: 21.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 94.4÷105V; 21.9A; bidirectional; ±5%; SMC; 3.0SMCJ
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...105V
Max. forward impulse current: 21.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
5.0SMCJ85CA |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 94.4÷104V; 36.5A; bidirectional; ±5%; SMC; 5.0SMCJ
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...104V
Max. forward impulse current: 36.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMC
Mounting: SMD
Leakage current: 2µA
Kind of package: reel; tape
Manufacturer series: 5.0SMCJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 94.4÷104V; 36.5A; bidirectional; ±5%; SMC; 5.0SMCJ
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...104V
Max. forward impulse current: 36.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMC
Mounting: SMD
Leakage current: 2µA
Kind of package: reel; tape
Manufacturer series: 5.0SMCJ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FX2000D |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 20A; Ammo Pack; Ifsm: 650A; Ø8x7,5mm
Kind of package: Ammo Pack
Features of semiconductor devices: fast switching
Mounting: THT
Case: Ø8x7,5mm
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 200ns
Leakage current: 5µA
Max. forward voltage: 0.82V
Load current: 20A
Max. off-state voltage: 200V
Max. load current: 70A
Max. forward impulse current: 0.65kA
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 20A; Ammo Pack; Ifsm: 650A; Ø8x7,5mm
Kind of package: Ammo Pack
Features of semiconductor devices: fast switching
Mounting: THT
Case: Ø8x7,5mm
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 200ns
Leakage current: 5µA
Max. forward voltage: 0.82V
Load current: 20A
Max. off-state voltage: 200V
Max. load current: 70A
Max. forward impulse current: 0.65kA
auf Bestellung 8197 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
91+ | 0.79 EUR |
146+ | 0.49 EUR |
154+ | 0.46 EUR |
1000+ | 0.45 EUR |
FX2000F |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 20A; Ammo Pack; Ifsm: 650A; Ø8x7,5mm
Kind of package: Ammo Pack
Features of semiconductor devices: fast switching
Mounting: THT
Case: Ø8x7,5mm
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 200ns
Leakage current: 5µA
Max. forward voltage: 0.82V
Load current: 20A
Max. off-state voltage: 300V
Max. load current: 70A
Max. forward impulse current: 0.65kA
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 20A; Ammo Pack; Ifsm: 650A; Ø8x7,5mm
Kind of package: Ammo Pack
Features of semiconductor devices: fast switching
Mounting: THT
Case: Ø8x7,5mm
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 200ns
Leakage current: 5µA
Max. forward voltage: 0.82V
Load current: 20A
Max. off-state voltage: 300V
Max. load current: 70A
Max. forward impulse current: 0.65kA
auf Bestellung 761 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
71+ | 1.02 EUR |
94+ | 0.76 EUR |
115+ | 0.62 EUR |
135+ | 0.53 EUR |
143+ | 0.5 EUR |
FX2000A |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 20A; Ammo Pack; Ifsm: 650A; Ø8x7,5mm
Kind of package: Ammo Pack
Features of semiconductor devices: fast switching
Mounting: THT
Case: Ø8x7,5mm
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 200ns
Leakage current: 5µA
Max. forward voltage: 0.82V
Load current: 20A
Max. off-state voltage: 50V
Max. load current: 70A
Max. forward impulse current: 0.65kA
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 20A; Ammo Pack; Ifsm: 650A; Ø8x7,5mm
Kind of package: Ammo Pack
Features of semiconductor devices: fast switching
Mounting: THT
Case: Ø8x7,5mm
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 200ns
Leakage current: 5µA
Max. forward voltage: 0.82V
Load current: 20A
Max. off-state voltage: 50V
Max. load current: 70A
Max. forward impulse current: 0.65kA
auf Bestellung 529 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
43+ | 1.69 EUR |
59+ | 1.22 EUR |
72+ | 1 EUR |
152+ | 0.47 EUR |
161+ | 0.45 EUR |
FX2000B |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 20A; Ammo Pack; Ifsm: 650A; Ø8x7,5mm
Kind of package: Ammo Pack
Features of semiconductor devices: fast switching
Mounting: THT
Case: Ø8x7,5mm
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 200ns
Leakage current: 5µA
Max. forward voltage: 0.82V
Load current: 20A
Max. off-state voltage: 100V
Max. load current: 70A
Max. forward impulse current: 0.65kA
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 20A; Ammo Pack; Ifsm: 650A; Ø8x7,5mm
Kind of package: Ammo Pack
Features of semiconductor devices: fast switching
Mounting: THT
Case: Ø8x7,5mm
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 200ns
Leakage current: 5µA
Max. forward voltage: 0.82V
Load current: 20A
Max. off-state voltage: 100V
Max. load current: 70A
Max. forward impulse current: 0.65kA
auf Bestellung 1233 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
42+ | 1.72 EUR |
67+ | 1.08 EUR |
146+ | 0.49 EUR |
154+ | 0.46 EUR |
BZW06-26 |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 30V; unidirectional; ±5%; DO15; Ammo Pack; BZW06
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 5µA
Kind of package: Ammo Pack
Manufacturer series: BZW06
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 30V; unidirectional; ±5%; DO15; Ammo Pack; BZW06
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 5µA
Kind of package: Ammo Pack
Manufacturer series: BZW06
auf Bestellung 4960 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
360+ | 0.2 EUR |
540+ | 0.13 EUR |
685+ | 0.1 EUR |
760+ | 0.094 EUR |
810+ | 0.089 EUR |
4000+ | 0.086 EUR |
TGL41-30CA |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 30V; 10A; bidirectional; ±5%; MELF plastic
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 10A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: MELF plastic
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 30V; 10A; bidirectional; ±5%; MELF plastic
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 10A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: MELF plastic
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
auf Bestellung 731 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
600+ | 0.12 EUR |
P4KE30A |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 400W; 30V; 10A; unidirectional; ±5%; DO15; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 10A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Manufacturer series: P4KE
Leakage current: 5µA
Tolerance: ±5%
Kind of package: Ammo Pack
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 400W; 30V; 10A; unidirectional; ±5%; DO15; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 10A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Manufacturer series: P4KE
Leakage current: 5µA
Tolerance: ±5%
Kind of package: Ammo Pack
auf Bestellung 1824 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
173+ | 0.41 EUR |
241+ | 0.3 EUR |
283+ | 0.25 EUR |
463+ | 0.15 EUR |
685+ | 0.1 EUR |
725+ | 0.099 EUR |
LL4148 |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; MiniMELF glass; Ufmax: 1.1V
Type of diode: switching
Power dissipation: 0.5W
Mounting: SMD
Kind of package: reel; tape
Case: MiniMELF glass
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Capacitance: 4pF
Reverse recovery time: 4ns
Leakage current: 50µA
Load current: 0.15A
Max. load current: 0.5A
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Max. off-state voltage: 100V
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; MiniMELF glass; Ufmax: 1.1V
Type of diode: switching
Power dissipation: 0.5W
Mounting: SMD
Kind of package: reel; tape
Case: MiniMELF glass
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Capacitance: 4pF
Reverse recovery time: 4ns
Leakage current: 50µA
Load current: 0.15A
Max. load current: 0.5A
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Max. off-state voltage: 100V
auf Bestellung 740721 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
583+ | 0.12 EUR |
926+ | 0.077 EUR |
1137+ | 0.063 EUR |
1737+ | 0.041 EUR |
2101+ | 0.034 EUR |
3290+ | 0.022 EUR |
4033+ | 0.018 EUR |
8772+ | 0.0082 EUR |
9260+ | 0.0077 EUR |
P4SMAJ150A |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 167÷185V; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 150V
Breakdown voltage: 167...185V
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Leakage current: 5µA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 167÷185V; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 150V
Breakdown voltage: 167...185V
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Leakage current: 5µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
P6SMBJ7.0CA |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 7.8÷8.7V; 50A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7V
Breakdown voltage: 7.8...8.7V
Max. forward impulse current: 50A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Tolerance: ±5%
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 7.8÷8.7V; 50A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7V
Breakdown voltage: 7.8...8.7V
Max. forward impulse current: 50A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Tolerance: ±5%
auf Bestellung 2740 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
760+ | 0.094 EUR |
900+ | 0.08 EUR |
1020+ | 0.07 EUR |
1180+ | 0.061 EUR |
1250+ | 0.058 EUR |
P6SMBJ7.5CA |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 8.3÷9.2V; 42A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.3...9.2V
Max. forward impulse current: 42A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.1mA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Tolerance: ±5%
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 8.3÷9.2V; 42A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.3...9.2V
Max. forward impulse current: 42A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.1mA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Tolerance: ±5%
auf Bestellung 2980 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
760+ | 0.094 EUR |
900+ | 0.08 EUR |
1020+ | 0.07 EUR |
1180+ | 0.061 EUR |
1250+ | 0.058 EUR |
ESD5Z12 |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 204W; 14.1V; 9.6A; unidirectional; SOD523F; reel,tape
Type of diode: TVS
Max. off-state voltage: 12V
Breakdown voltage: 14.1V
Semiconductor structure: unidirectional
Case: SOD523F
Mounting: SMD
Kind of package: reel; tape
Peak pulse power dissipation: 204W
Version: ESD
Leakage current: 10nA
Max. forward impulse current: 9.6A
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 204W; 14.1V; 9.6A; unidirectional; SOD523F; reel,tape
Type of diode: TVS
Max. off-state voltage: 12V
Breakdown voltage: 14.1V
Semiconductor structure: unidirectional
Case: SOD523F
Mounting: SMD
Kind of package: reel; tape
Peak pulse power dissipation: 204W
Version: ESD
Leakage current: 10nA
Max. forward impulse current: 9.6A
auf Bestellung 2625 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
556+ | 0.13 EUR |
1112+ | 0.064 EUR |
1568+ | 0.046 EUR |
1786+ | 0.04 EUR |
2393+ | 0.03 EUR |
2526+ | 0.028 EUR |
ESD5Z12-AQ |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 204W; 14.1V; 9.6A; unidirectional; SOD523F; reel,tape
Type of diode: TVS
Max. off-state voltage: 12V
Breakdown voltage: 14.1V
Semiconductor structure: unidirectional
Case: SOD523F
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Peak pulse power dissipation: 204W
Version: ESD
Leakage current: 10nA
Max. forward impulse current: 9.6A
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 204W; 14.1V; 9.6A; unidirectional; SOD523F; reel,tape
Type of diode: TVS
Max. off-state voltage: 12V
Breakdown voltage: 14.1V
Semiconductor structure: unidirectional
Case: SOD523F
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Peak pulse power dissipation: 204W
Version: ESD
Leakage current: 10nA
Max. forward impulse current: 9.6A
auf Bestellung 2850 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1450+ | 0.05 EUR |
1600+ | 0.045 EUR |
2075+ | 0.034 EUR |
2200+ | 0.033 EUR |
P4SMAJ40CA-AQ |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 44.4÷49.3V; 6.2A; bidirectional; ±5%; SMA; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.3V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Leakage current: 5µA
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 44.4÷49.3V; 6.2A; bidirectional; ±5%; SMA; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.3V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Leakage current: 5µA
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
P4SMAJ40CA |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 44.4÷49.3V; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.3V
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Leakage current: 5µA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 44.4÷49.3V; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.3V
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Leakage current: 5µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ZY6.2 |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 2W; 6.2V; 303mA; Ammo Pack; DO41; single diode; ZY
Type of diode: Zener
Power dissipation: 2W
Zener voltage: 6.2V
Zener current: 303mA
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: ZY
Category: THT Zener diodes
Description: Diode: Zener; 2W; 6.2V; 303mA; Ammo Pack; DO41; single diode; ZY
Type of diode: Zener
Power dissipation: 2W
Zener voltage: 6.2V
Zener current: 303mA
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: ZY
auf Bestellung 1045 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
186+ | 0.39 EUR |
358+ | 0.2 EUR |
520+ | 0.14 EUR |
1045+ | 0.069 EUR |
ZMM6.2 |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; SMD; reel,tape; MiniMELF glass,SOD80C
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Kind of package: reel; tape
Case: MiniMELF glass; SOD80C
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: ZMM
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; SMD; reel,tape; MiniMELF glass,SOD80C
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Kind of package: reel; tape
Case: MiniMELF glass; SOD80C
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: ZMM
auf Bestellung 7230 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
585+ | 0.12 EUR |
1064+ | 0.067 EUR |
1498+ | 0.048 EUR |
1767+ | 0.04 EUR |
2041+ | 0.035 EUR |
3876+ | 0.018 EUR |
4099+ | 0.017 EUR |
3EZ6.2 |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 3W; 6.2V; 455mA; Ammo Pack; DO15; single diode; 3EZ
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 6.2V
Zener current: 455mA
Kind of package: Ammo Pack
Case: DO15
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 3EZ
Category: THT Zener diodes
Description: Diode: Zener; 3W; 6.2V; 455mA; Ammo Pack; DO15; single diode; 3EZ
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 6.2V
Zener current: 455mA
Kind of package: Ammo Pack
Case: DO15
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 3EZ
auf Bestellung 1351 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
295+ | 0.24 EUR |
506+ | 0.14 EUR |
585+ | 0.12 EUR |
712+ | 0.1 EUR |
1000+ | 0.072 EUR |
1058+ | 0.068 EUR |
SMZ6.2 |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 2W; 6.2V; 303mA; SMD; reel,tape; MELF plastic; SMZ
Type of diode: Zener
Power dissipation: 2W
Zener voltage: 6.2V
Zener current: 303mA
Kind of package: reel; tape
Case: MELF plastic
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: SMZ
Category: SMD Zener diodes
Description: Diode: Zener; 2W; 6.2V; 303mA; SMD; reel,tape; MELF plastic; SMZ
Type of diode: Zener
Power dissipation: 2W
Zener voltage: 6.2V
Zener current: 303mA
Kind of package: reel; tape
Case: MELF plastic
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: SMZ
auf Bestellung 4847 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
358+ | 0.2 EUR |
486+ | 0.15 EUR |
552+ | 0.13 EUR |
583+ | 0.12 EUR |
921+ | 0.078 EUR |
975+ | 0.073 EUR |
ZMC6.2 |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; 76mA; SMD; reel,tape; MicroMELF quadro
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Zener current: 76mA
Kind of package: reel; tape
Case: MicroMELF quadro
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: ZMC
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; 76mA; SMD; reel,tape; MicroMELF quadro
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Zener current: 76mA
Kind of package: reel; tape
Case: MicroMELF quadro
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: ZMC
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
712+ | 0.1 EUR |
962+ | 0.074 EUR |
1183+ | 0.06 EUR |
1409+ | 0.051 EUR |
2348+ | 0.03 EUR |
2476+ | 0.029 EUR |
SZ3C6.2 |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 6.2V; 455mA; SMD; reel,tape; MELF plastic; SZ3C
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 6.2V
Zener current: 455mA
Kind of package: reel; tape
Case: MELF plastic
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: SZ3C
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 6.2V; 455mA; SMD; reel,tape; MELF plastic; SZ3C
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 6.2V
Zener current: 455mA
Kind of package: reel; tape
Case: MELF plastic
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: SZ3C
auf Bestellung 4645 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
173+ | 0.41 EUR |
281+ | 0.25 EUR |
410+ | 0.17 EUR |
685+ | 0.1 EUR |
725+ | 0.099 EUR |
Z1SMA6.2 |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 6.2V; 152mA; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 6.2V
Zener current: 152mA
Kind of package: reel; tape
Case: SMA
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: Z1SMA
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 6.2V; 152mA; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 6.2V
Zener current: 152mA
Kind of package: reel; tape
Case: SMA
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: Z1SMA
auf Bestellung 4148 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
193+ | 0.37 EUR |
254+ | 0.28 EUR |
410+ | 0.17 EUR |
1083+ | 0.066 EUR |
1145+ | 0.062 EUR |
DI280N10TL |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 194A; Idm: 1.2kA; 425W; HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 194A
Pulsed drain current: 1.2kA
Power dissipation: 425W
Case: HSOF-8
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 122nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 194A; Idm: 1.2kA; 425W; HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 194A
Pulsed drain current: 1.2kA
Power dissipation: 425W
Case: HSOF-8
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 122nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DI080N10D1 |
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; Idm: 400A; 56.8W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 400A
Power dissipation: 56.8W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; Idm: 400A; 56.8W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 400A
Power dissipation: 56.8W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DI068N03PQ |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 43A; Idm: 210A; 25W; QFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 43A
Power dissipation: 25W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 79nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 210A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 43A; Idm: 210A; 25W; QFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 43A
Power dissipation: 25W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 79nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 210A
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
30+ | 2.39 EUR |
DI115N06PQ |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 72.5A; Idm: 480A; 78.9W; QFN5x6
Case: QFN5x6
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 480A
Drain current: 72.5A
Drain-source voltage: 60V
Gate charge: 13nC
On-state resistance: 3.6mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 78.9W
Type of transistor: N-MOSFET
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 72.5A; Idm: 480A; 78.9W; QFN5x6
Case: QFN5x6
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 480A
Drain current: 72.5A
Drain-source voltage: 60V
Gate charge: 13nC
On-state resistance: 3.6mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 78.9W
Type of transistor: N-MOSFET
Kind of channel: enhancement
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.18 EUR |
19+ | 3.95 EUR |
71+ | 1.02 EUR |
75+ | 0.96 EUR |
DI110N03PQ-AQ |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 70A; Idm: 420A; 35W; QFN5x6
Case: QFN5x6
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Pulsed drain current: 420A
Drain current: 70A
Drain-source voltage: 30V
Gate charge: 163nC
On-state resistance: 2.5mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 35W
Type of transistor: N-MOSFET
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 70A; Idm: 420A; 35W; QFN5x6
Case: QFN5x6
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Pulsed drain current: 420A
Drain current: 70A
Drain-source voltage: 30V
Gate charge: 163nC
On-state resistance: 2.5mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 35W
Type of transistor: N-MOSFET
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DI045N10PQ-AQ |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 39A; Idm: 400A; 40W; QFN5x6
Case: QFN5x6
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Pulsed drain current: 400A
Drain current: 39A
Drain-source voltage: 100V
Gate charge: 56nC
On-state resistance: 9mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 40W
Type of transistor: N-MOSFET
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 39A; Idm: 400A; 40W; QFN5x6
Case: QFN5x6
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Pulsed drain current: 400A
Drain current: 39A
Drain-source voltage: 100V
Gate charge: 56nC
On-state resistance: 9mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 40W
Type of transistor: N-MOSFET
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DI070P04PQ |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -70A; Idm: -300A; 46W; QFN5x6
Case: QFN5x6
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: -300A
Drain current: -70A
Drain-source voltage: -40V
Gate charge: 125nC
On-state resistance: 6.5mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 46W
Type of transistor: P-MOSFET
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -70A; Idm: -300A; 46W; QFN5x6
Case: QFN5x6
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: -300A
Drain current: -70A
Drain-source voltage: -40V
Gate charge: 125nC
On-state resistance: 6.5mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 46W
Type of transistor: P-MOSFET
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DI022N20PQ-AQ |
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 13A; Idm: 80A; 60W; QFN5x6
Case: QFN5x6
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Pulsed drain current: 80A
Drain current: 13A
Drain-source voltage: 200V
Gate charge: 16nC
On-state resistance: 50mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 60W
Type of transistor: N-MOSFET
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 13A; Idm: 80A; 60W; QFN5x6
Case: QFN5x6
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Pulsed drain current: 80A
Drain current: 13A
Drain-source voltage: 200V
Gate charge: 16nC
On-state resistance: 50mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 60W
Type of transistor: N-MOSFET
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DI022N20PQ |
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 13A; Idm: 80A; 60W; QFN5x6
Case: QFN5x6
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 80A
Drain current: 13A
Drain-source voltage: 200V
Gate charge: 16nC
On-state resistance: 50mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 60W
Type of transistor: N-MOSFET
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 13A; Idm: 80A; 60W; QFN5x6
Case: QFN5x6
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 80A
Drain current: 13A
Drain-source voltage: 200V
Gate charge: 16nC
On-state resistance: 50mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 60W
Type of transistor: N-MOSFET
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DI017N06PQ-AQ |
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 50A; 21W; QFN5x6
Case: QFN5x6
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Pulsed drain current: 50A
Drain current: 10A
Drain-source voltage: 60V
Gate charge: 19nC
On-state resistance: 39mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 21W
Type of transistor: N-MOSFET
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 50A; 21W; QFN5x6
Case: QFN5x6
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Pulsed drain current: 50A
Drain current: 10A
Drain-source voltage: 60V
Gate charge: 19nC
On-state resistance: 39mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 21W
Type of transistor: N-MOSFET
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DI017N06PQ |
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 50A; 21W; QFN5x6
Case: QFN5x6
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 50A
Drain current: 10A
Drain-source voltage: 60V
Gate charge: 19nC
On-state resistance: 39mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 21W
Type of transistor: N-MOSFET
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 50A; 21W; QFN5x6
Case: QFN5x6
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 50A
Drain current: 10A
Drain-source voltage: 60V
Gate charge: 19nC
On-state resistance: 39mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 21W
Type of transistor: N-MOSFET
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DI025N20PQ |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 20A; Idm: 100A; 135W; QFN5x6
Case: QFN5x6
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 100A
Drain current: 20A
Drain-source voltage: 200V
Gate charge: 28nC
On-state resistance: 48mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 135W
Type of transistor: N-MOSFET
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 20A; Idm: 100A; 135W; QFN5x6
Case: QFN5x6
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 100A
Drain current: 20A
Drain-source voltage: 200V
Gate charge: 28nC
On-state resistance: 48mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 135W
Type of transistor: N-MOSFET
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DI068N03PQ-AQ |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 43A; Idm: 210A; 25W; QFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 43A
Power dissipation: 25W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 79nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 210A
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 43A; Idm: 210A; 25W; QFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 43A
Power dissipation: 25W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 79nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 210A
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DI070P04PQ-AQ |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -70A; Idm: -300A; 46W; QFN5x6
Case: QFN5x6
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Pulsed drain current: -300A
Drain current: -70A
Drain-source voltage: -40V
Gate charge: 125nC
On-state resistance: 6.5mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 46W
Type of transistor: P-MOSFET
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -70A; Idm: -300A; 46W; QFN5x6
Case: QFN5x6
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Pulsed drain current: -300A
Drain current: -70A
Drain-source voltage: -40V
Gate charge: 125nC
On-state resistance: 6.5mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 46W
Type of transistor: P-MOSFET
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DI075N08PQ |
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 47A; Idm: 350A; 45W; QFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 47A
Pulsed drain current: 350A
Power dissipation: 45W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 89nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 47A; Idm: 350A; 45W; QFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 47A
Pulsed drain current: 350A
Power dissipation: 45W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 89nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DI080N03PQ |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 75A; Idm: 160A; 78W; QFN5x6
Case: QFN5x6
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 160A
Drain current: 75A
Drain-source voltage: 30V
Gate charge: 21nC
On-state resistance: 1.9mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 78W
Type of transistor: N-MOSFET
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 75A; Idm: 160A; 78W; QFN5x6
Case: QFN5x6
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 160A
Drain current: 75A
Drain-source voltage: 30V
Gate charge: 21nC
On-state resistance: 1.9mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 78W
Type of transistor: N-MOSFET
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DI100N10PQ-AQ |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; Idm: 480A; 60W; QFN5x6
Case: QFN5x6
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Pulsed drain current: 480A
Drain current: 50A
Drain-source voltage: 100V
Gate charge: 75nC
On-state resistance: 6.6mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 60W
Type of transistor: N-MOSFET
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; Idm: 480A; 60W; QFN5x6
Case: QFN5x6
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Pulsed drain current: 480A
Drain current: 50A
Drain-source voltage: 100V
Gate charge: 75nC
On-state resistance: 6.6mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 60W
Type of transistor: N-MOSFET
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DI110N03PQ |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 70A; Idm: 420A; 35W; QFN5x6
Case: QFN5x6
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 420A
Drain current: 70A
Drain-source voltage: 30V
Gate charge: 163nC
On-state resistance: 2.5mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 35W
Type of transistor: N-MOSFET
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 70A; Idm: 420A; 35W; QFN5x6
Case: QFN5x6
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 420A
Drain current: 70A
Drain-source voltage: 30V
Gate charge: 163nC
On-state resistance: 2.5mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 35W
Type of transistor: N-MOSFET
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DI110N04PQ-AQ |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 110A; Idm: 400A; 42W; QFN5x6
Case: QFN5x6
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Pulsed drain current: 400A
Drain current: 110A
Drain-source voltage: 40V
Gate charge: 59nC
On-state resistance: 2.9mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 42W
Type of transistor: N-MOSFET
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 110A; Idm: 400A; 42W; QFN5x6
Case: QFN5x6
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Pulsed drain current: 400A
Drain current: 110A
Drain-source voltage: 40V
Gate charge: 59nC
On-state resistance: 2.9mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 42W
Type of transistor: N-MOSFET
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DI110N04PQ |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 110A; Idm: 400A; 42W; QFN5x6
Case: QFN5x6
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 400A
Drain current: 110A
Drain-source voltage: 40V
Gate charge: 59nC
On-state resistance: 2.9mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 42W
Type of transistor: N-MOSFET
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 110A; Idm: 400A; 42W; QFN5x6
Case: QFN5x6
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 400A
Drain current: 110A
Drain-source voltage: 40V
Gate charge: 59nC
On-state resistance: 2.9mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 42W
Type of transistor: N-MOSFET
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DI200N04PQ |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 165A; Idm: 800A; 180W; QFN5x6
Case: QFN5x6
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 800A
Drain current: 165A
Drain-source voltage: 40V
Gate charge: 92nC
On-state resistance: 1.3mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 180W
Type of transistor: N-MOSFET
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 165A; Idm: 800A; 180W; QFN5x6
Case: QFN5x6
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 800A
Drain current: 165A
Drain-source voltage: 40V
Gate charge: 92nC
On-state resistance: 1.3mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 180W
Type of transistor: N-MOSFET
Kind of channel: enhancement
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BC847BR13 |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 250mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23
Current gain: 200...450
Mounting: SMD
Kind of package: 13 inch reel; tape
Frequency: 300MHz
Pulsed collector current: 0.2A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 250mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23
Current gain: 200...450
Mounting: SMD
Kind of package: 13 inch reel; tape
Frequency: 300MHz
Pulsed collector current: 0.2A
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SMF8.5A |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 200W; 9.4÷10.4V; 13.89A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 8.5V
Breakdown voltage: 9.4...10.4V
Max. forward impulse current: 13.89A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMF; SOD123F
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
Manufacturer series: SMF
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 200W; 9.4÷10.4V; 13.89A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 8.5V
Breakdown voltage: 9.4...10.4V
Max. forward impulse current: 13.89A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMF; SOD123F
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
Manufacturer series: SMF
auf Bestellung 1935 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
600+ | 0.12 EUR |
1250+ | 0.057 EUR |
1425+ | 0.05 EUR |
1625+ | 0.044 EUR |
1720+ | 0.042 EUR |
LL4151 |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 4ns; MiniMELF glass; Ufmax: 1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Semiconductor structure: single diode
Case: MiniMELF glass
Max. load current: 0.5A
Max. forward impulse current: 2A
Kind of package: reel; tape
Features of semiconductor devices: superfast switching
Capacitance: 4pF
Reverse recovery time: 4ns
Leakage current: 50µA
Power dissipation: 0.5W
Max. forward voltage: 1V
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 4ns; MiniMELF glass; Ufmax: 1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Semiconductor structure: single diode
Case: MiniMELF glass
Max. load current: 0.5A
Max. forward impulse current: 2A
Kind of package: reel; tape
Features of semiconductor devices: superfast switching
Capacitance: 4pF
Reverse recovery time: 4ns
Leakage current: 50µA
Power dissipation: 0.5W
Max. forward voltage: 1V
auf Bestellung 8650 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2950+ | 0.025 EUR |
4900+ | 0.015 EUR |
6950+ | 0.01 EUR |
7400+ | 0.0097 EUR |
DI330N04D7 |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 330A; Idm: 1.4A; 375W; D2PAK-7
Case: D2PAK-7
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 157nC
On-state resistance: 0.75mΩ
Power dissipation: 375W
Pulsed drain current: 1.4A
Drain current: 330A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 330A; Idm: 1.4A; 375W; D2PAK-7
Case: D2PAK-7
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 157nC
On-state resistance: 0.75mΩ
Power dissipation: 375W
Pulsed drain current: 1.4A
Drain current: 330A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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GBU6K-LV |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 270A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 6A
Max. forward impulse current: 270A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: in-tray
Max. forward voltage: 0.92V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 270A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 6A
Max. forward impulse current: 270A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: in-tray
Max. forward voltage: 0.92V
Produkt ist nicht verfügbar
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