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DS18B20A30 DS18B20A30 EVVO DS18B20A30.pdf?rlkey=b1tu9y6ymv9ftocmttgqqb5p5&st=3g5ftzsz&dl=0 Description: TEMPERATURE SENSORS -55~+125 1.2
Features: Output Switch, Programmable Limit, Programmable Resolution, Standby Mode
Packaging: Bag
Package / Case: Cylindrical Probe, Stainless Steel
Output Type: 1-Wire®
Mounting Type: Free Hanging
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2.5V ~ 5.5V
Sensor Type: Digital, Local/Remote
Resolution: 12 b
Test Condition: -10°C ~ 85°C (-55°C ~ 125°C)
Accuracy - Highest (Lowest): ±0.4°C (±1.2°C)
Sensing Temperature - Local: -55°C ~ 125°C
Sensing Temperature - Remote: -55°C ~ 125°C
auf Bestellung 58 Stücke:
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2+9.80 EUR
5+8.82 EUR
10+8.46 EUR
25+8.02 EUR
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DS18B20-EV DS18B20-EV EVVO DS18B20.pdf Description: SENSOR DIGITAL -55C-125C TO92
Features: Standby Mode
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Output Type: 1-Wire®
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2.5V ~ 5.5V
Sensor Type: Digital
Resolution: 12 b
Supplier Device Package: TO-92
Test Condition: -55°C ~ 125°C
Accuracy - Highest (Lowest): ±0.4°C
Sensing Temperature - Local: -55°C ~ 125°C
auf Bestellung 4355 Stücke:
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DS210W DS210W EVVO DS22%20thru%20DS220W.pdf Description: DIODE SCHOTTKY 100V 2A SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
Produkt ist nicht verfügbar
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DS210W DS210W EVVO DS22%20thru%20DS220W.pdf Description: DIODE SCHOTTKY 100V 2A SOD123FL
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
auf Bestellung 835 Stücke:
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DW01 DW01 EVVO DW01.pdf?rlkey=wg2us1d6rqxi4nc0cpr9mnvdw&st=o03tqebp&dl=0 Description: BATTERY PROTECTION IC IN A SOT23
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-6
Produkt ist nicht verfügbar
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DW01 DW01 EVVO DW01.pdf?rlkey=wg2us1d6rqxi4nc0cpr9mnvdw&st=o03tqebp&dl=0 Description: BATTERY PROTECTION IC IN A SOT23
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-6
auf Bestellung 2027 Stücke:
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DW01 DW01 EVVO DW01.pdf?rlkey=wg2us1d6rqxi4nc0cpr9mnvdw&st=o03tqebp&dl=0 Description: BATTERY PROTECTION IC IN A SOT23
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-6
Produkt ist nicht verfügbar
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FDC5614P-EV FDC5614P-EV EVVO FDC5614P-EV.pdf Description: MOSFET P-CH 60V 3A SOT-23-6
Packaging: Tape & Reel (TR)
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FDC5614P-EV FDC5614P-EV EVVO FDC5614P-EV.pdf Description: MOSFET P-CH 60V 3A SOT-23-6
Packaging: Cut Tape (CT)
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FDN304P-EV FDN304P-EV EVVO Description: MOSFET P-CH 20V 2.4A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 2.4A, 4.5V
Power Dissipation (Max): 460mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1312 pF @ 10 V
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FDN304P-EV FDN304P-EV EVVO Description: MOSFET P-CH 20V 2.4A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 2.4A, 4.5V
Power Dissipation (Max): 460mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1312 pF @ 10 V
Produkt ist nicht verfügbar
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FDN335N-EV FDN335N-EV EVVO FDN335N-EV.pdf Description: MOSFET N-CH 20V 1.7A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 1.7A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 10 V
Produkt ist nicht verfügbar
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FDN335N-EV FDN335N-EV EVVO FDN335N-EV.pdf Description: MOSFET N-CH 20V 1.7A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 1.7A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 10 V
auf Bestellung 3000 Stücke:
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FDN337N-EV FDN337N-EV EVVO FDN337N-EV.pdf Description: MOSFET N-CH 30V 2.2A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 2.2A, 4.5V
Power Dissipation (Max): 460mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
Produkt ist nicht verfügbar
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FDN337N-EV FDN337N-EV EVVO FDN337N-EV.pdf Description: MOSFET N-CH 30V 2.2A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 2.2A, 4.5V
Power Dissipation (Max): 460mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
auf Bestellung 2999 Stücke:
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32+0.56 EUR
54+0.33 EUR
66+0.27 EUR
100+0.20 EUR
250+0.17 EUR
500+0.14 EUR
1000+0.13 EUR
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FDN338P-EV FDN338P-EV EVVO FDN338P-EV.pdf Description: MOSFET P-CH 20V 1.6A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 112mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V
auf Bestellung 3000 Stücke:
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FDN338P-EV FDN338P-EV EVVO FDN338P-EV.pdf Description: MOSFET P-CH 20V 1.6A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 112mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V
Produkt ist nicht verfügbar
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FDN340P-EV FDN340P-EV EVVO FDN340P-EV.pdf Description: MOSFET P-CH 20V 2A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V
Produkt ist nicht verfügbar
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FDN340P-EV FDN340P-EV EVVO FDN340P-EV.pdf Description: MOSFET P-CH 20V 2A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V
auf Bestellung 2995 Stücke:
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31+0.58 EUR
52+0.34 EUR
64+0.28 EUR
100+0.21 EUR
250+0.17 EUR
500+0.15 EUR
1000+0.13 EUR
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FDV301N FDV301N EVVO FDV301N.pdf Description: MOSFET N-CH 25V 220MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 6A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 865 pF @ 10 V
auf Bestellung 501 Stücke:
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FDV301N FDV301N EVVO FDV301N.pdf Description: MOSFET N-CH 25V 220MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 6A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 865 pF @ 10 V
Produkt ist nicht verfügbar
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FDV304P-EV FDV304P-EV EVVO FDV304P-EV.pdf Description: MOSFET P-CH 25V SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 954 pF @ 15 V
Produkt ist nicht verfügbar
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FDV304P-EV FDV304P-EV EVVO FDV304P-EV.pdf Description: MOSFET P-CH 25V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 954 pF @ 15 V
auf Bestellung 3000 Stücke:
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3000+0.10 EUR
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FR107 FR107 EVVO FR10xW.pdf description Description: DIODE GEN PURP 1KV 1A DO41
Packaging: Cut Tape (CT)
auf Bestellung 2819 Stücke:
Lieferzeit 10-14 Tag (e)
32+0.56 EUR
52+0.34 EUR
100+0.22 EUR
500+0.16 EUR
1000+0.14 EUR
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FR107 FR107 EVVO FR10xW.pdf description Description: DIODE GEN PURP 1KV 1A DO41
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FS8205A FS8205A EVVO FS8205A.pdf?rlkey=uk1xu4b8b3nh1pfztfxj7ryr2&st=g8dw07ti&dl=0 Description: DUAL N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 20V
Rds On (Max) @ Id, Vgs: 27mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 17.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-6
Produkt ist nicht verfügbar
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FS8205A FS8205A EVVO FS8205A.pdf?rlkey=uk1xu4b8b3nh1pfztfxj7ryr2&st=g8dw07ti&dl=0 Description: DUAL N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 20V
Rds On (Max) @ Id, Vgs: 27mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 17.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-6
auf Bestellung 2309 Stücke:
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34+0.53 EUR
55+0.32 EUR
100+0.20 EUR
500+0.15 EUR
1000+0.13 EUR
Mindestbestellmenge: 34
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GBJ1510 GBJ1510 EVVO GBJ15005-GBJ1510%20N1794%20REV.C.pdf GBJ151000L150A.pdf ds21219.pdf 64-GBJ15005-GBJ1510(GBJ).pdf Description: BRIDGE RECT 1PHASE 1KV 15A GBJ
Packaging: Box
Package / Case: 4-ESIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
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GBJ2508 GBJ2508 EVVO GBJ25005-GBJ2510%20N1754%20REV.A.pdf Description: BRIDGE RECT 1PHASE 800V 25A GBJ
Packaging: Box
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
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GBJ2510 GBJ2510 EVVO 4491_GBJ25%20Series.pdf Description: BRIDGE RECT 1PHASE 1KV 25A GBJ
Packaging: Box
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
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GBJ3510 GBJ3510 EVVO GBJ35005-GBJ3510%20N1805%20REV.A.pdf GBJ351000L350A.pdf Description: BRIDGE RECT 1PHASE 1KV 35A GBJ
Packaging: Box
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
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GBU1010 GBU1010 EVVO GBU10005-GBU1010%20N1770%20REV.A.pdf GBU1010.pdf ds30052.pdf GBU10xx.pdf 54-GBU10005-GBU1010(GBU).pdf Description: BRIDGE RECT 1PHASE 1KV 10A GBU
Packaging: Box
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBU1510 GBU1510 EVVO GBU15005-GBU1510%20N1802%20REV.A.pdf Description: BRIDGE RECT 1PHASE 1KV 15A GBU
Packaging: Box
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 500 Stücke:
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11+1.67 EUR
17+1.05 EUR
100+0.69 EUR
500+0.53 EUR
Mindestbestellmenge: 11
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GBU406 GBU406 EVVO ds21225.pdf GBU0406000L460.pdf GBU401 SERIES_M2103.pdf GBU4005-GBU410%20N1726%20REV.A.pdf description Description: BRIDGE RECT 1PHASE 600V 4A GBU
Packaging: Box
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
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22+0.80 EUR
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500+0.40 EUR
Mindestbestellmenge: 14
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GBU410 GBU410 EVVO ds21225.pdf GBU0410000L40A.pdf GBU4005-GBU410%20N1726%20REV.A.pdf Description: BRIDGE RECT 1PHASE 1KV 4A GBU
Packaging: Box
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBU608 GBU608 EVVO ds21226.pdf GBU6005-GBU610%20N1791%20REV.A.pdf Description: BRIDGE RECT 1PHASE 800V 6A GBU
Packaging: Box
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
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GBU808 GBU808 EVVO GBU0808000L880.pdf ds21227.pdf GBU8005-GBU810%20N1809%20REV.A.pdf Description: BRIDGE RECT 1PHASE 800V 8A GBU
Packaging: Box
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
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GBU810 GBU810 EVVO ds21227.pdf GBU8005-GBU810%20N1809%20REV.A.pdf GBU8005-GBU810.pdf GBU8100000L80A.pdf Description: BRIDGE RECT 1PHASE 1KV 8A GBU
Packaging: Box
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.44 EUR
20+0.90 EUR
100+0.59 EUR
500+0.45 EUR
Mindestbestellmenge: 13
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KBL10 KBL10 EVVO KBL005.pdf Description: BRIDGE RECT 1PHASE 1KV 4A KBL
Packaging: Box
Package / Case: 4-SIP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.55 EUR
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100+0.63 EUR
500+0.49 EUR
Mindestbestellmenge: 12
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KBP206 KBP206 EVVO KBP206%7EKBP210.pdf Description: BRIDGE RECT 1PHASE 600V 2A KBP
Packaging: Box
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.81 EUR
36+0.50 EUR
100+0.32 EUR
500+0.24 EUR
Mindestbestellmenge: 22
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KBP210 KBP210 EVVO KBP210.pdf Description: BRIDGE RECT 1PHASE 1KV 2A KBP
Packaging: Box
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.81 EUR
36+0.50 EUR
100+0.32 EUR
500+0.24 EUR
Mindestbestellmenge: 22
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KBP307 KBP307 EVVO Description: BRIDGE RECT 1PHASE 700V 3A KBP
Packaging: Box
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 700 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 700 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
19+0.97 EUR
30+0.60 EUR
100+0.38 EUR
500+0.29 EUR
Mindestbestellmenge: 19
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KBP310 KBP310 EVVO Description: BRIDGE RECT 1PHASE 1KV 3A KBP
Packaging: Box
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KBPC1010 KBPC1010 EVVO Description: BRIDGE RECT 1PHASE 1KV 10A KBPC
Packaging: Box
Package / Case: 4-Square, KBPC
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
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KBPC1510 KBPC1510 EVVO Description: BRIDGE RECT 1P 1KV 15A KBPC
Packaging: Box
Produkt ist nicht verfügbar
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KBPC610 KBPC610 EVVO KBPC610000L60A.pdf kbpc600.pdf Description: BRIDGE RECT 1PHASE 1KV 6A KBPC
Packaging: Box
Produkt ist nicht verfügbar
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KSA940 KSA940 EVVO KSA940.pdf?rlkey=gu27720tswnsm19r5kyea316w&st=6ese9gx4&dl=0 Description: TRANS PNP 150V 1.5A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 10V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 25 W
Produkt ist nicht verfügbar
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KSC2073 KSC2073 EVVO KSC2073.pdf?rlkey=rwq57c0kbxuu86wljt3vhhlqa&st=8kcgrrrz&dl=0 Description: TRANS NPN 150V 1.5A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 10V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 25 W
Produkt ist nicht verfügbar
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L7809CV L7809CV EVVO L78xx_5272.pdf description Description: IC REG LINEAR 9V 1.2A TO220
Packaging: Bulk
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1.2A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220
Voltage - Output (Min/Fixed): 9V
Protection Features: Over Temperature, Short Circuit
auf Bestellung 689 Stücke:
Lieferzeit 10-14 Tag (e)
26+0.69 EUR
38+0.47 EUR
50+0.39 EUR
100+0.36 EUR
250+0.34 EUR
500+0.32 EUR
Mindestbestellmenge: 26
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L78L05 L78L05 EVVO Description: IC REG LINEAR 5V 100MA SOT89-3
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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L78L05 L78L05 EVVO Description: IC REG LINEAR 5V 100MA SOT89-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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L78L06 L78L06 EVVO Description: IC REG LINEAR 6V 100MA SOT89-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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L78L06 L78L06 EVVO Description: IC REG LINEAR 6V 100MA SOT89-3
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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L78L08 L78L08 EVVO Description: IC REG LINEAR 8V 100MA SOT89-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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L78L08 L78L08 EVVO Description: IC REG LINEAR 8V 100MA SOT89-3
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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L78L09 L78L09 EVVO Description: IC REG LINEAR 9V 100MA SOT89-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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L78L09 L78L09 EVVO Description: IC REG LINEAR 9V 100MA SOT89-3
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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L7908CV L7908CV EVVO L7908CV.pdf Description: IC REG LINEAR -8V 1.5A TO220
Packaging: Tube
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.76 EUR
33+0.54 EUR
50+0.44 EUR
100+0.42 EUR
250+0.39 EUR
Mindestbestellmenge: 24
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L7909CV L7909CV EVVO L7909CV.pdf Description: IC REG LINEAR -9V 1.5A TO220
Packaging: Tube
auf Bestellung 352 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.67 EUR
18+1.01 EUR
50+0.73 EUR
100+0.65 EUR
250+0.55 EUR
Mindestbestellmenge: 11
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L7912CV L7912CV EVVO L7912CV.pdf description Description: IC REG LINEAR -12V 1.5A TO220
Packaging: Tube
auf Bestellung 477 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.76 EUR
33+0.54 EUR
50+0.44 EUR
100+0.42 EUR
250+0.39 EUR
Mindestbestellmenge: 24
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DS18B20A30 DS18B20A30.pdf?rlkey=b1tu9y6ymv9ftocmttgqqb5p5&st=3g5ftzsz&dl=0
DS18B20A30
Hersteller: EVVO
Description: TEMPERATURE SENSORS -55~+125 1.2
Features: Output Switch, Programmable Limit, Programmable Resolution, Standby Mode
Packaging: Bag
Package / Case: Cylindrical Probe, Stainless Steel
Output Type: 1-Wire®
Mounting Type: Free Hanging
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2.5V ~ 5.5V
Sensor Type: Digital, Local/Remote
Resolution: 12 b
Test Condition: -10°C ~ 85°C (-55°C ~ 125°C)
Accuracy - Highest (Lowest): ±0.4°C (±1.2°C)
Sensing Temperature - Local: -55°C ~ 125°C
Sensing Temperature - Remote: -55°C ~ 125°C
auf Bestellung 58 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.80 EUR
5+8.82 EUR
10+8.46 EUR
25+8.02 EUR
Mindestbestellmenge: 2
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DS18B20-EV DS18B20.pdf
DS18B20-EV
Hersteller: EVVO
Description: SENSOR DIGITAL -55C-125C TO92
Features: Standby Mode
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Output Type: 1-Wire®
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2.5V ~ 5.5V
Sensor Type: Digital
Resolution: 12 b
Supplier Device Package: TO-92
Test Condition: -55°C ~ 125°C
Accuracy - Highest (Lowest): ±0.4°C
Sensing Temperature - Local: -55°C ~ 125°C
auf Bestellung 4355 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.71 EUR
6+3.31 EUR
10+3.16 EUR
25+2.97 EUR
50+2.85 EUR
100+2.74 EUR
500+2.51 EUR
1000+2.42 EUR
Mindestbestellmenge: 5
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DS210W DS22%20thru%20DS220W.pdf
DS210W
Hersteller: EVVO
Description: DIODE SCHOTTKY 100V 2A SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
Produkt ist nicht verfügbar
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DS210W DS22%20thru%20DS220W.pdf
DS210W
Hersteller: EVVO
Description: DIODE SCHOTTKY 100V 2A SOD123FL
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
auf Bestellung 835 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
44+0.40 EUR
71+0.25 EUR
113+0.16 EUR
500+0.11 EUR
Mindestbestellmenge: 44
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DW01 DW01.pdf?rlkey=wg2us1d6rqxi4nc0cpr9mnvdw&st=o03tqebp&dl=0
DW01
Hersteller: EVVO
Description: BATTERY PROTECTION IC IN A SOT23
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-6
Produkt ist nicht verfügbar
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DW01 DW01.pdf?rlkey=wg2us1d6rqxi4nc0cpr9mnvdw&st=o03tqebp&dl=0
DW01
Hersteller: EVVO
Description: BATTERY PROTECTION IC IN A SOT23
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-6
auf Bestellung 2027 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
112+0.16 EUR
244+0.07 EUR
281+0.06 EUR
337+0.05 EUR
373+0.05 EUR
500+0.04 EUR
1000+0.04 EUR
Mindestbestellmenge: 112
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DW01 DW01.pdf?rlkey=wg2us1d6rqxi4nc0cpr9mnvdw&st=o03tqebp&dl=0
DW01
Hersteller: EVVO
Description: BATTERY PROTECTION IC IN A SOT23
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-6
Produkt ist nicht verfügbar
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FDC5614P-EV FDC5614P-EV.pdf
FDC5614P-EV
Hersteller: EVVO
Description: MOSFET P-CH 60V 3A SOT-23-6
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.35 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
FDC5614P-EV FDC5614P-EV.pdf
FDC5614P-EV
Hersteller: EVVO
Description: MOSFET P-CH 60V 3A SOT-23-6
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDN304P-EV
FDN304P-EV
Hersteller: EVVO
Description: MOSFET P-CH 20V 2.4A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 2.4A, 4.5V
Power Dissipation (Max): 460mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1312 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.27 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
FDN304P-EV
FDN304P-EV
Hersteller: EVVO
Description: MOSFET P-CH 20V 2.4A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 2.4A, 4.5V
Power Dissipation (Max): 460mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1312 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDN335N-EV FDN335N-EV.pdf
FDN335N-EV
Hersteller: EVVO
Description: MOSFET N-CH 20V 1.7A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 1.7A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDN335N-EV FDN335N-EV.pdf
FDN335N-EV
Hersteller: EVVO
Description: MOSFET N-CH 20V 1.7A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 1.7A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.22 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
FDN337N-EV FDN337N-EV.pdf
FDN337N-EV
Hersteller: EVVO
Description: MOSFET N-CH 30V 2.2A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 2.2A, 4.5V
Power Dissipation (Max): 460mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDN337N-EV FDN337N-EV.pdf
FDN337N-EV
Hersteller: EVVO
Description: MOSFET N-CH 30V 2.2A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 2.2A, 4.5V
Power Dissipation (Max): 460mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
auf Bestellung 2999 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
32+0.56 EUR
54+0.33 EUR
66+0.27 EUR
100+0.20 EUR
250+0.17 EUR
500+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
FDN338P-EV FDN338P-EV.pdf
FDN338P-EV
Hersteller: EVVO
Description: MOSFET P-CH 20V 1.6A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 112mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.22 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
FDN338P-EV FDN338P-EV.pdf
FDN338P-EV
Hersteller: EVVO
Description: MOSFET P-CH 20V 1.6A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 112mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDN340P-EV FDN340P-EV.pdf
FDN340P-EV
Hersteller: EVVO
Description: MOSFET P-CH 20V 2A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDN340P-EV FDN340P-EV.pdf
FDN340P-EV
Hersteller: EVVO
Description: MOSFET P-CH 20V 2A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V
auf Bestellung 2995 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
31+0.58 EUR
52+0.34 EUR
64+0.28 EUR
100+0.21 EUR
250+0.17 EUR
500+0.15 EUR
1000+0.13 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH
FDV301N FDV301N.pdf
FDV301N
Hersteller: EVVO
Description: MOSFET N-CH 25V 220MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 6A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 865 pF @ 10 V
auf Bestellung 501 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
44+0.40 EUR
72+0.24 EUR
116+0.15 EUR
500+0.11 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
FDV301N FDV301N.pdf
FDV301N
Hersteller: EVVO
Description: MOSFET N-CH 25V 220MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 6A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 865 pF @ 10 V
Produkt ist nicht verfügbar
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FDV304P-EV FDV304P-EV.pdf
FDV304P-EV
Hersteller: EVVO
Description: MOSFET P-CH 25V SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 954 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDV304P-EV FDV304P-EV.pdf
FDV304P-EV
Hersteller: EVVO
Description: MOSFET P-CH 25V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 954 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.10 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
FR107 description FR10xW.pdf
FR107
Hersteller: EVVO
Description: DIODE GEN PURP 1KV 1A DO41
Packaging: Cut Tape (CT)
auf Bestellung 2819 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
32+0.56 EUR
52+0.34 EUR
100+0.22 EUR
500+0.16 EUR
1000+0.14 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
FR107 description FR10xW.pdf
FR107
Hersteller: EVVO
Description: DIODE GEN PURP 1KV 1A DO41
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FS8205A FS8205A.pdf?rlkey=uk1xu4b8b3nh1pfztfxj7ryr2&st=g8dw07ti&dl=0
FS8205A
Hersteller: EVVO
Description: DUAL N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 20V
Rds On (Max) @ Id, Vgs: 27mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 17.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-6
Produkt ist nicht verfügbar
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FS8205A FS8205A.pdf?rlkey=uk1xu4b8b3nh1pfztfxj7ryr2&st=g8dw07ti&dl=0
FS8205A
Hersteller: EVVO
Description: DUAL N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 20V
Rds On (Max) @ Id, Vgs: 27mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 17.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-6
auf Bestellung 2309 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
55+0.32 EUR
100+0.20 EUR
500+0.15 EUR
1000+0.13 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
GBJ1510 GBJ15005-GBJ1510%20N1794%20REV.C.pdf GBJ151000L150A.pdf ds21219.pdf 64-GBJ15005-GBJ1510(GBJ).pdf
GBJ1510
Hersteller: EVVO
Description: BRIDGE RECT 1PHASE 1KV 15A GBJ
Packaging: Box
Package / Case: 4-ESIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBJ2508 GBJ25005-GBJ2510%20N1754%20REV.A.pdf
GBJ2508
Hersteller: EVVO
Description: BRIDGE RECT 1PHASE 800V 25A GBJ
Packaging: Box
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
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GBJ2510 4491_GBJ25%20Series.pdf
GBJ2510
Hersteller: EVVO
Description: BRIDGE RECT 1PHASE 1KV 25A GBJ
Packaging: Box
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBJ3510 GBJ35005-GBJ3510%20N1805%20REV.A.pdf GBJ351000L350A.pdf
GBJ3510
Hersteller: EVVO
Description: BRIDGE RECT 1PHASE 1KV 35A GBJ
Packaging: Box
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBU1010 GBU10005-GBU1010%20N1770%20REV.A.pdf GBU1010.pdf ds30052.pdf GBU10xx.pdf 54-GBU10005-GBU1010(GBU).pdf
GBU1010
Hersteller: EVVO
Description: BRIDGE RECT 1PHASE 1KV 10A GBU
Packaging: Box
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBU1510 GBU15005-GBU1510%20N1802%20REV.A.pdf
GBU1510
Hersteller: EVVO
Description: BRIDGE RECT 1PHASE 1KV 15A GBU
Packaging: Box
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.67 EUR
17+1.05 EUR
100+0.69 EUR
500+0.53 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
GBU406 description ds21225.pdf GBU0406000L460.pdf GBU401 SERIES_M2103.pdf GBU4005-GBU410%20N1726%20REV.A.pdf
GBU406
Hersteller: EVVO
Description: BRIDGE RECT 1PHASE 600V 4A GBU
Packaging: Box
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.30 EUR
22+0.80 EUR
100+0.52 EUR
500+0.40 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
GBU410 ds21225.pdf GBU0410000L40A.pdf GBU4005-GBU410%20N1726%20REV.A.pdf
GBU410
Hersteller: EVVO
Description: BRIDGE RECT 1PHASE 1KV 4A GBU
Packaging: Box
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBU608 ds21226.pdf GBU6005-GBU610%20N1791%20REV.A.pdf
GBU608
Hersteller: EVVO
Description: BRIDGE RECT 1PHASE 800V 6A GBU
Packaging: Box
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBU808 GBU0808000L880.pdf ds21227.pdf GBU8005-GBU810%20N1809%20REV.A.pdf
GBU808
Hersteller: EVVO
Description: BRIDGE RECT 1PHASE 800V 8A GBU
Packaging: Box
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBU810 ds21227.pdf GBU8005-GBU810%20N1809%20REV.A.pdf GBU8005-GBU810.pdf GBU8100000L80A.pdf
GBU810
Hersteller: EVVO
Description: BRIDGE RECT 1PHASE 1KV 8A GBU
Packaging: Box
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.44 EUR
20+0.90 EUR
100+0.59 EUR
500+0.45 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
KBL10 KBL005.pdf
KBL10
Hersteller: EVVO
Description: BRIDGE RECT 1PHASE 1KV 4A KBL
Packaging: Box
Package / Case: 4-SIP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.55 EUR
19+0.97 EUR
100+0.63 EUR
500+0.49 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
KBP206 KBP206%7EKBP210.pdf
KBP206
Hersteller: EVVO
Description: BRIDGE RECT 1PHASE 600V 2A KBP
Packaging: Box
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.81 EUR
36+0.50 EUR
100+0.32 EUR
500+0.24 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
KBP210 KBP210.pdf
KBP210
Hersteller: EVVO
Description: BRIDGE RECT 1PHASE 1KV 2A KBP
Packaging: Box
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.81 EUR
36+0.50 EUR
100+0.32 EUR
500+0.24 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
KBP307
KBP307
Hersteller: EVVO
Description: BRIDGE RECT 1PHASE 700V 3A KBP
Packaging: Box
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 700 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 700 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.97 EUR
30+0.60 EUR
100+0.38 EUR
500+0.29 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
KBP310
KBP310
Hersteller: EVVO
Description: BRIDGE RECT 1PHASE 1KV 3A KBP
Packaging: Box
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KBPC1010
KBPC1010
Hersteller: EVVO
Description: BRIDGE RECT 1PHASE 1KV 10A KBPC
Packaging: Box
Package / Case: 4-Square, KBPC
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KBPC1510
KBPC1510
Hersteller: EVVO
Description: BRIDGE RECT 1P 1KV 15A KBPC
Packaging: Box
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KBPC610 KBPC610000L60A.pdf kbpc600.pdf
KBPC610
Hersteller: EVVO
Description: BRIDGE RECT 1PHASE 1KV 6A KBPC
Packaging: Box
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KSA940 KSA940.pdf?rlkey=gu27720tswnsm19r5kyea316w&st=6ese9gx4&dl=0
KSA940
Hersteller: EVVO
Description: TRANS PNP 150V 1.5A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 10V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 25 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KSC2073 KSC2073.pdf?rlkey=rwq57c0kbxuu86wljt3vhhlqa&st=8kcgrrrz&dl=0
KSC2073
Hersteller: EVVO
Description: TRANS NPN 150V 1.5A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 10V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 25 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
L7809CV description L78xx_5272.pdf
L7809CV
Hersteller: EVVO
Description: IC REG LINEAR 9V 1.2A TO220
Packaging: Bulk
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1.2A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220
Voltage - Output (Min/Fixed): 9V
Protection Features: Over Temperature, Short Circuit
auf Bestellung 689 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
26+0.69 EUR
38+0.47 EUR
50+0.39 EUR
100+0.36 EUR
250+0.34 EUR
500+0.32 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
L78L05
L78L05
Hersteller: EVVO
Description: IC REG LINEAR 5V 100MA SOT89-3
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
L78L05
L78L05
Hersteller: EVVO
Description: IC REG LINEAR 5V 100MA SOT89-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
L78L06
L78L06
Hersteller: EVVO
Description: IC REG LINEAR 6V 100MA SOT89-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
L78L06
L78L06
Hersteller: EVVO
Description: IC REG LINEAR 6V 100MA SOT89-3
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
L78L08
L78L08
Hersteller: EVVO
Description: IC REG LINEAR 8V 100MA SOT89-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
L78L08
L78L08
Hersteller: EVVO
Description: IC REG LINEAR 8V 100MA SOT89-3
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
L78L09
L78L09
Hersteller: EVVO
Description: IC REG LINEAR 9V 100MA SOT89-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
L78L09
L78L09
Hersteller: EVVO
Description: IC REG LINEAR 9V 100MA SOT89-3
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
L7908CV L7908CV.pdf
L7908CV
Hersteller: EVVO
Description: IC REG LINEAR -8V 1.5A TO220
Packaging: Tube
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.76 EUR
33+0.54 EUR
50+0.44 EUR
100+0.42 EUR
250+0.39 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
L7909CV L7909CV.pdf
L7909CV
Hersteller: EVVO
Description: IC REG LINEAR -9V 1.5A TO220
Packaging: Tube
auf Bestellung 352 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.67 EUR
18+1.01 EUR
50+0.73 EUR
100+0.65 EUR
250+0.55 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
L7912CV description L7912CV.pdf
L7912CV
Hersteller: EVVO
Description: IC REG LINEAR -12V 1.5A TO220
Packaging: Tube
auf Bestellung 477 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.76 EUR
33+0.54 EUR
50+0.44 EUR
100+0.42 EUR
250+0.39 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
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