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DMG2305UX-EV DMG2305UX-EV EVVO DMG2305UX-EV.pdf?rlkey=3w96u9wh2cbpw6gw9mlrytxk9&st=6uwcerki&dl=0 Description: MOSFET P-CH 20V 4.2A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 886.6 pF @ 10 V
Produkt ist nicht verfügbar
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DMG2305UX-EV DMG2305UX-EV EVVO DMG2305UX-EV.pdf?rlkey=3w96u9wh2cbpw6gw9mlrytxk9&st=6uwcerki&dl=0 Description: MOSFET P-CH 20V 4.2A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 886.6 pF @ 10 V
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
39+0.46 EUR
62+0.29 EUR
100+0.18 EUR
500+0.13 EUR
1000+0.12 EUR
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DS18B20A05 DS18B20A05 EVVO 5272_DS18B20A05.pdf Description: TEMPERATURE SENSORS -55~+125 1.2
Packaging: Bag
Produkt ist nicht verfügbar
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DS18B20A10 DS18B20A10 EVVO 5272_DS18B20A10.pdf Description: TEMPERATURE SENSORS -55~+125 1.2
Features: Standby Mode
Packaging: Bag
Package / Case: Cylindrical Probe, Stainless Steel
Output Type: 1-Wire®
Mounting Type: Free Hanging
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2.5V ~ 5.5V
Sensor Type: Digital
Resolution: 12 b
Test Condition: -55°C ~ 125°C
Accuracy - Highest (Lowest): ±0.4°C
Sensing Temperature - Local: -55°C ~ 125°C
auf Bestellung 122 Stücke:
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3+8.08 EUR
5+7.26 EUR
10+6.95 EUR
25+6.59 EUR
50+6.34 EUR
100+6.11 EUR
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DS18B20A15 DS18B20A15 EVVO DS18B20A15.pdf?rlkey=g43sjhfeiejrwj2lbv91dpu7i&st=jh0ocb9t&dl=0 Description: TEMPERATURE SENSORS -55~+125 1.2
Packaging: Bag
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DS18B20A20 DS18B20A20 EVVO DS18B20A20.pdf?rlkey=g4pquv8mopdq1nau61crz5xma&st=rqkp16yn&dl=0 Description: TEMPERATURE SENSORS -55~+125 1.2
Packaging: Bag
Produkt ist nicht verfügbar
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DS18B20A30 DS18B20A30 EVVO 5272_DS18B20A30.pdf Description: TEMPERATURE SENSORS -55~+125 1.2
Features: Output Switch, Programmable Limit, Programmable Resolution, Standby Mode
Packaging: Bag
Package / Case: Cylindrical Probe, Stainless Steel
Output Type: 1-Wire®
Mounting Type: Free Hanging
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2.5V ~ 5.5V
Sensor Type: Digital, Local/Remote
Resolution: 12 b
Test Condition: -10°C ~ 85°C (-55°C ~ 125°C)
Accuracy - Highest (Lowest): ±0.4°C (±1.2°C)
Sensing Temperature - Local: -55°C ~ 125°C
Sensing Temperature - Remote: -55°C ~ 125°C
Produkt ist nicht verfügbar
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DS18B20A50 DS18B20A50 EVVO DS18B20A50.pdf?rlkey=8w1g73rdmjbt9glr9cemcdlrm&st=knpa7bsq&dl=0 Description: TEMPERATURE SENSORS -55~+125 1.2
Packaging: Bag
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DS18B20-EV DS18B20-EV EVVO 5272_DS18B20-EV.pdf Description: SENSOR DIGITAL -55C-125C TO92
Features: Standby Mode
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Output Type: 1-Wire®
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2.5V ~ 5.5V
Sensor Type: Digital
Resolution: 12 b
Supplier Device Package: TO-92
Test Condition: -55°C ~ 125°C
Accuracy - Highest (Lowest): ±0.4°C
Sensing Temperature - Local: -55°C ~ 125°C
auf Bestellung 3718 Stücke:
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5+3.61 EUR
6+3.21 EUR
10+3.06 EUR
25+2.88 EUR
50+2.76 EUR
100+2.65 EUR
500+2.43 EUR
1000+2.35 EUR
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DS210W DS210W EVVO DS22%20thru%20DS220W.pdf Description: DIODE SCHOTTKY 100V 2A SOD123FL
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
auf Bestellung 835 Stücke:
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71+0.25 EUR
113+0.16 EUR
500+0.11 EUR
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DS210W DS210W EVVO DS22%20thru%20DS220W.pdf Description: DIODE SCHOTTKY 100V 2A SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
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DW01 DW01 EVVO DW01.pdf?rlkey=wg2us1d6rqxi4nc0cpr9mnvdw&st=o03tqebp&dl=0 Description: BATTERY PROTECTION IC IN A SOT23
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-6
Produkt ist nicht verfügbar
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DW01 DW01 EVVO DW01.pdf?rlkey=wg2us1d6rqxi4nc0cpr9mnvdw&st=o03tqebp&dl=0 Description: BATTERY PROTECTION IC IN A SOT23
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-6
auf Bestellung 1949 Stücke:
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112+0.16 EUR
244+0.072 EUR
285+0.062 EUR
338+0.052 EUR
374+0.047 EUR
500+0.044 EUR
1000+0.042 EUR
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DW01 DW01 EVVO DW01.pdf?rlkey=wg2us1d6rqxi4nc0cpr9mnvdw&st=o03tqebp&dl=0 Description: BATTERY PROTECTION IC IN A SOT23
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-6
Produkt ist nicht verfügbar
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FDC5614P-EV FDC5614P-EV EVVO FDC5614P-EV.pdf Description: MOSFET P-CH 60V 3A SOT-23-6
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
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3000+0.35 EUR
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FDC5614P-EV FDC5614P-EV EVVO FDC5614P-EV.pdf Description: MOSFET P-CH 60V 3A SOT-23-6
Packaging: Cut Tape (CT)
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FDN304P-EV FDN304P-EV EVVO Description: MOSFET P-CH 20V 2.4A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 2.4A, 4.5V
Power Dissipation (Max): 460mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1312 pF @ 10 V
Produkt ist nicht verfügbar
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FDN304P-EV FDN304P-EV EVVO Description: MOSFET P-CH 20V 2.4A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 2.4A, 4.5V
Power Dissipation (Max): 460mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1312 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.27 EUR
Mindestbestellmenge: 3000
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FDN335N-EV FDN335N-EV EVVO FDN335N-EV.pdf Description: MOSFET N-CH 20V 1.7A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 1.7A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.22 EUR
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FDN335N-EV FDN335N-EV EVVO FDN335N-EV.pdf Description: MOSFET N-CH 20V 1.7A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 1.7A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 10 V
Produkt ist nicht verfügbar
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FDN337N-EV FDN337N-EV EVVO 5272_FDN337N-EV.pdf Description: MOSFET N-CH 30V 2.2A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 2.2A, 4.5V
Power Dissipation (Max): 460mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
auf Bestellung 2884 Stücke:
Lieferzeit 10-14 Tag (e)
100+0.18 EUR
143+0.12 EUR
164+0.11 EUR
195+0.09 EUR
250+0.082 EUR
500+0.077 EUR
1000+0.073 EUR
Mindestbestellmenge: 100
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FDN337N-EV FDN337N-EV EVVO 5272_FDN337N-EV.pdf Description: MOSFET N-CH 30V 2.2A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 2.2A, 4.5V
Power Dissipation (Max): 460mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
Produkt ist nicht verfügbar
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FDN338P-EV FDN338P-EV EVVO FDN338P-EV.pdf Description: MOSFET P-CH 20V 1.6A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 112mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V
Produkt ist nicht verfügbar
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FDN338P-EV FDN338P-EV EVVO FDN338P-EV.pdf Description: MOSFET P-CH 20V 1.6A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 112mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.22 EUR
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FDN340P-EV FDN340P-EV EVVO FDN340P-EV.pdf Description: MOSFET P-CH 20V 2A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V
auf Bestellung 2995 Stücke:
Lieferzeit 10-14 Tag (e)
31+0.58 EUR
52+0.34 EUR
64+0.28 EUR
100+0.21 EUR
250+0.17 EUR
500+0.15 EUR
1000+0.13 EUR
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FDN340P-EV FDN340P-EV EVVO FDN340P-EV.pdf Description: MOSFET P-CH 20V 2A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V
Produkt ist nicht verfügbar
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FDV304P-EV FDV304P-EV EVVO FDV304P-EV.pdf Description: MOSFET P-CH 25V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 954 pF @ 15 V
Produkt ist nicht verfügbar
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FDV304P-EV FDV304P-EV EVVO FDV304P-EV.pdf Description: MOSFET P-CH 25V SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 954 pF @ 15 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
39+0.46 EUR
62+0.29 EUR
100+0.18 EUR
500+0.13 EUR
1000+0.12 EUR
Mindestbestellmenge: 39
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FR107 FR107 EVVO 5272_FR107.pdf description Description: DIODE GEN PURP 1KV 1A DO41
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FR107 FR107 EVVO 5272_FR107.pdf description Description: DIODE GEN PURP 1KV 1A DO41
Packaging: Cut Tape (CT)
auf Bestellung 2819 Stücke:
Lieferzeit 10-14 Tag (e)
33+0.55 EUR
53+0.34 EUR
100+0.21 EUR
500+0.16 EUR
1000+0.14 EUR
Mindestbestellmenge: 33
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FS8205A FS8205A EVVO 5272_FS8205A.pdf Description: DUAL N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 20V
Rds On (Max) @ Id, Vgs: 27mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 17.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-6
Produkt ist nicht verfügbar
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FS8205A FS8205A EVVO 5272_FS8205A.pdf Description: DUAL N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 20V
Rds On (Max) @ Id, Vgs: 27mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 17.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-6
Produkt ist nicht verfügbar
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GBJ1510 GBJ1510 EVVO GBJ15005-GBJ1510%20N1794%20REV.C.pdf GBJ151000L150A.pdf ds21219.pdf 64-GBJ15005-GBJ1510(GBJ).pdf Description: BRIDGE RECT 1PHASE 1KV 15A GBJ
Packaging: Box
Package / Case: 4-ESIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
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GBJ2508 GBJ2508 EVVO GBJ25005-GBJ2510%20N1754%20REV.A.pdf Description: BRIDGE RECT 1PHASE 800V 25A GBJ
Packaging: Box
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
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GBJ2510 GBJ2510 EVVO 5272_GBJ2510.pdf Description: BRIDGE RECT 1PHASE 1KV 25A GBJ
Packaging: Box
Package / Case: 4-ESIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 119 Stücke:
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GBJ3510 GBJ3510 EVVO GBJ35005-GBJ3510%20N1805%20REV.A.pdf GBJ351000L350A.pdf Description: BRIDGE RECT 1PHASE 1KV 35A GBJ
Packaging: Box
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
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GBPC3510 GBPC3510 EVVO GBPC3510.pdf?rlkey=me4333h9kx5mvoxcwr3muoyz1&st=c2r0oz4g&dl=0 Description: 35A GLASS PASSIVATED BRIDGE RECT
Packaging: Box
Package / Case: 4-Square, GBPC
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 1000 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 0.1 mA @ 1000 V
Produkt ist nicht verfügbar
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GBPC3510W GBPC3510W EVVO GBPC3510W.pdf?rlkey=k76rdwnxn852m2445jds4lvtt&st=cy1ztnii&dl=0 Description: 35A GLASS PASSIVATED BRIDGE RECT
Packaging: Box
Package / Case: 4-Square, GBPC-W
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 1000 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 0.1 mA @ 1000 V
Produkt ist nicht verfügbar
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GBPC5010 GBPC5010 EVVO GBPC5010.pdf?rlkey=b8v3ksdyp5zi1q2oylcpdq187&st=303v6ll9&dl=0 Description: 50A GLASS PASSIVATED HIGH CURREN
Packaging: Box
Package / Case: 4-Square, GBPC
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 1000 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 25.0
Current - Reverse Leakage @ Vr: 0.1 mA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBPC5010W GBPC5010W EVVO GBPC5010W.pdf?rlkey=ai5tup9lct1cbl8a0vkzglp4w&st=a4xub87f&dl=0 Description: 50A GLASS PASSIVATED HIGH CURREN
Packaging: Box
Package / Case: 4-Square, GBPC-W
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 1000 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 25.0
Current - Reverse Leakage @ Vr: 0.1 mA @ 1000 V
Produkt ist nicht verfügbar
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GBU1010 GBU1010 EVVO 5272_GBU1010.pdf Description: BRIDGE RECT 1PHASE 1KV 10A GBU
Packaging: Box
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 500 Stücke:
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GBU1510 GBU1510 EVVO 5272_GBU1510.pdf Description: BRIDGE RECT 1PHASE 1KV 15A GBU
Packaging: Box
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 467 Stücke:
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GBU410 GBU410 EVVO 5272_GBU410.pdf Description: BRIDGE RECT 1PHASE 1KV 4A GBU
Packaging: Box
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 300 Stücke:
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14+1.27 EUR
23+0.78 EUR
100+0.5 EUR
Mindestbestellmenge: 14
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GBU608 GBU608 EVVO ds21226.pdf GBU6005-GBU610%20N1791%20REV.A.pdf Description: BRIDGE RECT 1PHASE 800V 6A GBU
Packaging: Box
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
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GBU806 GBU806 EVVO 5272_GBU806.pdf Description: BRIDGE RECT 1PHASE 600V 8A GBU
Packaging: Box
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 500 Stücke:
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13+1.39 EUR
21+0.87 EUR
100+0.57 EUR
500+0.44 EUR
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GBU808 GBU808 EVVO 5272_GBU808.pdf Description: BRIDGE RECT 1PHASE 800V 8A GBU
Packaging: Box
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
auf Bestellung 494 Stücke:
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13+1.39 EUR
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GBU810 GBU810 EVVO 5272_GBU810.pdf Description: BRIDGE RECT 1PHASE 1KV 8A GBU
Packaging: Box
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 490 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.39 EUR
21+0.87 EUR
100+0.57 EUR
Mindestbestellmenge: 13
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KBL10 KBL10 EVVO 5272_KBL10.pdf Description: BRIDGE RECT 1PHASE 1KV 4A KBL
Packaging: Box
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 375 Stücke:
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12+1.5 EUR
19+0.94 EUR
100+0.61 EUR
Mindestbestellmenge: 12
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KBL610 KBL610 EVVO 5272_KBL610.pdf Description: BRIDGE RECT 1PHASE 1KV 6A KBL
Packaging: Box
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 442 Stücke:
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12+1.5 EUR
19+0.94 EUR
100+0.61 EUR
Mindestbestellmenge: 12
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KBP206 KBP206 EVVO 5272_KBP206.pdf Description: BRIDGE RECT 1PHASE 600V 2A KBP
Packaging: Box
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 476 Stücke:
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23+0.77 EUR
37+0.48 EUR
100+0.31 EUR
Mindestbestellmenge: 23
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KBP208 KBP208 EVVO 5272_KBP208.pdf Description: BRIDGE RECT 1PHASE 800V 2A KBP
Packaging: Box
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 500 Stücke:
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19+0.95 EUR
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100+0.37 EUR
500+0.28 EUR
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KBP210 KBP210 EVVO 5272_KBP210.pdf Description: BRIDGE RECT 1PHASE 1KV 2A KBP
Packaging: Box
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 475 Stücke:
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KBP307 KBP307 EVVO 5272_KBP307.pdf Description: BRIDGE RECT 1PHASE 700V 3A KBP
Packaging: Box
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 700 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 700 V
auf Bestellung 469 Stücke:
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19+0.95 EUR
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KBP310 KBP310 EVVO 5272_KBP310.pdf Description: BRIDGE RECT 1PHASE 1KV 3A KBP
Packaging: Box
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 304 Stücke:
Lieferzeit 10-14 Tag (e)
19+0.95 EUR
31+0.58 EUR
100+0.37 EUR
Mindestbestellmenge: 19
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KBPC1010 KBPC1010 EVVO Description: BRIDGE RECT 1PHASE 1KV 10A KBPC
Packaging: Box
Package / Case: 4-Square, KBPC
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
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KBPC1510 KBPC1510 EVVO 5272_KBPC1510.pdf Description: BRIDGE RECT 1P 1KV 15A KBPC
Packaging: Box
Package / Case: 4-Square, KBPC
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
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KBPC2510 KBPC2510 EVVO KBPC2510.pdf?rlkey=w5lqc7zvszj7cfwhv7l6p5reo&st=66fu3ldx&dl=0 Description: 25A SINGLE - PHASE SILICON BRIDG
Packaging: Box
Package / Case: 4-Square, KBPC
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C
Technology: Standard
Supplier Device Package: KBPC
Voltage - Peak Reverse (Max): 1000 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 12.5
Current - Reverse Leakage @ Vr: 0.1 mA @ 1000 V
Produkt ist nicht verfügbar
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KBPC3510 KBPC3510 EVVO KBPC3510.pdf?rlkey=igybglwoa5z05kr86n896snem&st=6nfmif4u&dl=0 description Description: 35A SINGLE - PHASE SILICON BRIDG
Packaging: Box
Package / Case: 4-Square, KBPC
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C
Technology: Standard
Supplier Device Package: KBPC
Voltage - Peak Reverse (Max): 1000 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 17.5
Current - Reverse Leakage @ Vr: 0.1 mA @ 1000 V
Produkt ist nicht verfügbar
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KBPC3510W KBPC3510W EVVO KBPC3510W.pdf?rlkey=7jt6zc3t2sqsgnxw0zsj7c2sf&st=9xqq0fea&dl=0 description Description: 35A HIGH CURRENT SINGLE-PHASE BR
Packaging: Box
Package / Case: 4-Square, KBPC-W
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C
Technology: Standard
Voltage - Peak Reverse (Max): 1000 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 17.5
Current - Reverse Leakage @ Vr: 0.1 mA @ 1000 V
Produkt ist nicht verfügbar
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KBPC5010 KBPC5010 EVVO KBPC5010.pdf?rlkey=yg1yo2me3dvfnfkezxyu2hhum&st=651c89kk&dl=0 description Description: 50A HIGH CURRENT SINGLE-PHASE BR
Packaging: Box
Package / Case: 4-Square, KBPC
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C
Technology: Standard
Supplier Device Package: KBPC
Voltage - Peak Reverse (Max): 1000 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 25.0
Current - Reverse Leakage @ Vr: 0.1 mA @ 1000 V
Produkt ist nicht verfügbar
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DMG2305UX-EV DMG2305UX-EV.pdf?rlkey=3w96u9wh2cbpw6gw9mlrytxk9&st=6uwcerki&dl=0
DMG2305UX-EV
Hersteller: EVVO
Description: MOSFET P-CH 20V 4.2A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 886.6 pF @ 10 V
Produkt ist nicht verfügbar
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DMG2305UX-EV DMG2305UX-EV.pdf?rlkey=3w96u9wh2cbpw6gw9mlrytxk9&st=6uwcerki&dl=0
DMG2305UX-EV
Hersteller: EVVO
Description: MOSFET P-CH 20V 4.2A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 886.6 pF @ 10 V
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
39+0.46 EUR
62+0.29 EUR
100+0.18 EUR
500+0.13 EUR
1000+0.12 EUR
Mindestbestellmenge: 39
Im Einkaufswagen  Stück im Wert von  UAH
DS18B20A05 5272_DS18B20A05.pdf
DS18B20A05
Hersteller: EVVO
Description: TEMPERATURE SENSORS -55~+125 1.2
Packaging: Bag
Produkt ist nicht verfügbar
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DS18B20A10 5272_DS18B20A10.pdf
DS18B20A10
Hersteller: EVVO
Description: TEMPERATURE SENSORS -55~+125 1.2
Features: Standby Mode
Packaging: Bag
Package / Case: Cylindrical Probe, Stainless Steel
Output Type: 1-Wire®
Mounting Type: Free Hanging
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2.5V ~ 5.5V
Sensor Type: Digital
Resolution: 12 b
Test Condition: -55°C ~ 125°C
Accuracy - Highest (Lowest): ±0.4°C
Sensing Temperature - Local: -55°C ~ 125°C
auf Bestellung 122 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.08 EUR
5+7.26 EUR
10+6.95 EUR
25+6.59 EUR
50+6.34 EUR
100+6.11 EUR
Mindestbestellmenge: 3
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DS18B20A15 DS18B20A15.pdf?rlkey=g43sjhfeiejrwj2lbv91dpu7i&st=jh0ocb9t&dl=0
DS18B20A15
Hersteller: EVVO
Description: TEMPERATURE SENSORS -55~+125 1.2
Packaging: Bag
Produkt ist nicht verfügbar
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DS18B20A20 DS18B20A20.pdf?rlkey=g4pquv8mopdq1nau61crz5xma&st=rqkp16yn&dl=0
DS18B20A20
Hersteller: EVVO
Description: TEMPERATURE SENSORS -55~+125 1.2
Packaging: Bag
Produkt ist nicht verfügbar
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DS18B20A30 5272_DS18B20A30.pdf
DS18B20A30
Hersteller: EVVO
Description: TEMPERATURE SENSORS -55~+125 1.2
Features: Output Switch, Programmable Limit, Programmable Resolution, Standby Mode
Packaging: Bag
Package / Case: Cylindrical Probe, Stainless Steel
Output Type: 1-Wire®
Mounting Type: Free Hanging
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2.5V ~ 5.5V
Sensor Type: Digital, Local/Remote
Resolution: 12 b
Test Condition: -10°C ~ 85°C (-55°C ~ 125°C)
Accuracy - Highest (Lowest): ±0.4°C (±1.2°C)
Sensing Temperature - Local: -55°C ~ 125°C
Sensing Temperature - Remote: -55°C ~ 125°C
Produkt ist nicht verfügbar
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DS18B20A50 DS18B20A50.pdf?rlkey=8w1g73rdmjbt9glr9cemcdlrm&st=knpa7bsq&dl=0
DS18B20A50
Hersteller: EVVO
Description: TEMPERATURE SENSORS -55~+125 1.2
Packaging: Bag
Produkt ist nicht verfügbar
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DS18B20-EV 5272_DS18B20-EV.pdf
DS18B20-EV
Hersteller: EVVO
Description: SENSOR DIGITAL -55C-125C TO92
Features: Standby Mode
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Output Type: 1-Wire®
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2.5V ~ 5.5V
Sensor Type: Digital
Resolution: 12 b
Supplier Device Package: TO-92
Test Condition: -55°C ~ 125°C
Accuracy - Highest (Lowest): ±0.4°C
Sensing Temperature - Local: -55°C ~ 125°C
auf Bestellung 3718 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.61 EUR
6+3.21 EUR
10+3.06 EUR
25+2.88 EUR
50+2.76 EUR
100+2.65 EUR
500+2.43 EUR
1000+2.35 EUR
Mindestbestellmenge: 5
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DS210W DS22%20thru%20DS220W.pdf
DS210W
Hersteller: EVVO
Description: DIODE SCHOTTKY 100V 2A SOD123FL
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
auf Bestellung 835 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
44+0.4 EUR
71+0.25 EUR
113+0.16 EUR
500+0.11 EUR
Mindestbestellmenge: 44
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DS210W DS22%20thru%20DS220W.pdf
DS210W
Hersteller: EVVO
Description: DIODE SCHOTTKY 100V 2A SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
Produkt ist nicht verfügbar
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DW01 DW01.pdf?rlkey=wg2us1d6rqxi4nc0cpr9mnvdw&st=o03tqebp&dl=0
DW01
Hersteller: EVVO
Description: BATTERY PROTECTION IC IN A SOT23
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-6
Produkt ist nicht verfügbar
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DW01 DW01.pdf?rlkey=wg2us1d6rqxi4nc0cpr9mnvdw&st=o03tqebp&dl=0
DW01
Hersteller: EVVO
Description: BATTERY PROTECTION IC IN A SOT23
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-6
auf Bestellung 1949 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
112+0.16 EUR
244+0.072 EUR
285+0.062 EUR
338+0.052 EUR
374+0.047 EUR
500+0.044 EUR
1000+0.042 EUR
Mindestbestellmenge: 112
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DW01 DW01.pdf?rlkey=wg2us1d6rqxi4nc0cpr9mnvdw&st=o03tqebp&dl=0
DW01
Hersteller: EVVO
Description: BATTERY PROTECTION IC IN A SOT23
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-6
Produkt ist nicht verfügbar
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FDC5614P-EV FDC5614P-EV.pdf
FDC5614P-EV
Hersteller: EVVO
Description: MOSFET P-CH 60V 3A SOT-23-6
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.35 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
FDC5614P-EV FDC5614P-EV.pdf
FDC5614P-EV
Hersteller: EVVO
Description: MOSFET P-CH 60V 3A SOT-23-6
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDN304P-EV
FDN304P-EV
Hersteller: EVVO
Description: MOSFET P-CH 20V 2.4A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 2.4A, 4.5V
Power Dissipation (Max): 460mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1312 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDN304P-EV
FDN304P-EV
Hersteller: EVVO
Description: MOSFET P-CH 20V 2.4A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 2.4A, 4.5V
Power Dissipation (Max): 460mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1312 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.27 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
FDN335N-EV FDN335N-EV.pdf
FDN335N-EV
Hersteller: EVVO
Description: MOSFET N-CH 20V 1.7A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 1.7A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.22 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
FDN335N-EV FDN335N-EV.pdf
FDN335N-EV
Hersteller: EVVO
Description: MOSFET N-CH 20V 1.7A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 1.7A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 10 V
Produkt ist nicht verfügbar
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FDN337N-EV 5272_FDN337N-EV.pdf
FDN337N-EV
Hersteller: EVVO
Description: MOSFET N-CH 30V 2.2A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 2.2A, 4.5V
Power Dissipation (Max): 460mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
auf Bestellung 2884 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
100+0.18 EUR
143+0.12 EUR
164+0.11 EUR
195+0.09 EUR
250+0.082 EUR
500+0.077 EUR
1000+0.073 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
FDN337N-EV 5272_FDN337N-EV.pdf
FDN337N-EV
Hersteller: EVVO
Description: MOSFET N-CH 30V 2.2A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 2.2A, 4.5V
Power Dissipation (Max): 460mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
Produkt ist nicht verfügbar
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FDN338P-EV FDN338P-EV.pdf
FDN338P-EV
Hersteller: EVVO
Description: MOSFET P-CH 20V 1.6A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 112mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V
Produkt ist nicht verfügbar
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FDN338P-EV FDN338P-EV.pdf
FDN338P-EV
Hersteller: EVVO
Description: MOSFET P-CH 20V 1.6A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 112mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.22 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
FDN340P-EV FDN340P-EV.pdf
FDN340P-EV
Hersteller: EVVO
Description: MOSFET P-CH 20V 2A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V
auf Bestellung 2995 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
31+0.58 EUR
52+0.34 EUR
64+0.28 EUR
100+0.21 EUR
250+0.17 EUR
500+0.15 EUR
1000+0.13 EUR
Mindestbestellmenge: 31
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FDN340P-EV FDN340P-EV.pdf
FDN340P-EV
Hersteller: EVVO
Description: MOSFET P-CH 20V 2A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V
Produkt ist nicht verfügbar
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FDV304P-EV FDV304P-EV.pdf
FDV304P-EV
Hersteller: EVVO
Description: MOSFET P-CH 25V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 954 pF @ 15 V
Produkt ist nicht verfügbar
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FDV304P-EV FDV304P-EV.pdf
FDV304P-EV
Hersteller: EVVO
Description: MOSFET P-CH 25V SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 954 pF @ 15 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
39+0.46 EUR
62+0.29 EUR
100+0.18 EUR
500+0.13 EUR
1000+0.12 EUR
Mindestbestellmenge: 39
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FR107 description 5272_FR107.pdf
FR107
Hersteller: EVVO
Description: DIODE GEN PURP 1KV 1A DO41
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FR107 description 5272_FR107.pdf
FR107
Hersteller: EVVO
Description: DIODE GEN PURP 1KV 1A DO41
Packaging: Cut Tape (CT)
auf Bestellung 2819 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
33+0.55 EUR
53+0.34 EUR
100+0.21 EUR
500+0.16 EUR
1000+0.14 EUR
Mindestbestellmenge: 33
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FS8205A 5272_FS8205A.pdf
FS8205A
Hersteller: EVVO
Description: DUAL N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 20V
Rds On (Max) @ Id, Vgs: 27mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 17.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-6
Produkt ist nicht verfügbar
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FS8205A 5272_FS8205A.pdf
FS8205A
Hersteller: EVVO
Description: DUAL N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 20V
Rds On (Max) @ Id, Vgs: 27mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 17.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-6
Produkt ist nicht verfügbar
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GBJ1510 GBJ15005-GBJ1510%20N1794%20REV.C.pdf GBJ151000L150A.pdf ds21219.pdf 64-GBJ15005-GBJ1510(GBJ).pdf
GBJ1510
Hersteller: EVVO
Description: BRIDGE RECT 1PHASE 1KV 15A GBJ
Packaging: Box
Package / Case: 4-ESIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
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GBJ2508 GBJ25005-GBJ2510%20N1754%20REV.A.pdf
GBJ2508
Hersteller: EVVO
Description: BRIDGE RECT 1PHASE 800V 25A GBJ
Packaging: Box
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
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GBJ2510 5272_GBJ2510.pdf
GBJ2510
Hersteller: EVVO
Description: BRIDGE RECT 1PHASE 1KV 25A GBJ
Packaging: Box
Package / Case: 4-ESIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 119 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.59 EUR
11+1.64 EUR
100+1.1 EUR
Mindestbestellmenge: 7
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GBJ3510 GBJ35005-GBJ3510%20N1805%20REV.A.pdf GBJ351000L350A.pdf
GBJ3510
Hersteller: EVVO
Description: BRIDGE RECT 1PHASE 1KV 35A GBJ
Packaging: Box
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
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GBPC3510 GBPC3510.pdf?rlkey=me4333h9kx5mvoxcwr3muoyz1&st=c2r0oz4g&dl=0
GBPC3510
Hersteller: EVVO
Description: 35A GLASS PASSIVATED BRIDGE RECT
Packaging: Box
Package / Case: 4-Square, GBPC
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 1000 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 0.1 mA @ 1000 V
Produkt ist nicht verfügbar
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GBPC3510W GBPC3510W.pdf?rlkey=k76rdwnxn852m2445jds4lvtt&st=cy1ztnii&dl=0
GBPC3510W
Hersteller: EVVO
Description: 35A GLASS PASSIVATED BRIDGE RECT
Packaging: Box
Package / Case: 4-Square, GBPC-W
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 1000 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 0.1 mA @ 1000 V
Produkt ist nicht verfügbar
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GBPC5010 GBPC5010.pdf?rlkey=b8v3ksdyp5zi1q2oylcpdq187&st=303v6ll9&dl=0
GBPC5010
Hersteller: EVVO
Description: 50A GLASS PASSIVATED HIGH CURREN
Packaging: Box
Package / Case: 4-Square, GBPC
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 1000 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 25.0
Current - Reverse Leakage @ Vr: 0.1 mA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBPC5010W GBPC5010W.pdf?rlkey=ai5tup9lct1cbl8a0vkzglp4w&st=a4xub87f&dl=0
GBPC5010W
Hersteller: EVVO
Description: 50A GLASS PASSIVATED HIGH CURREN
Packaging: Box
Package / Case: 4-Square, GBPC-W
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 1000 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 25.0
Current - Reverse Leakage @ Vr: 0.1 mA @ 1000 V
Produkt ist nicht verfügbar
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GBU1010 5272_GBU1010.pdf
GBU1010
Hersteller: EVVO
Description: BRIDGE RECT 1PHASE 1KV 10A GBU
Packaging: Box
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.53 EUR
19+0.95 EUR
100+0.62 EUR
500+0.48 EUR
Mindestbestellmenge: 12
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GBU1510 5272_GBU1510.pdf
GBU1510
Hersteller: EVVO
Description: BRIDGE RECT 1PHASE 1KV 15A GBU
Packaging: Box
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 467 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.62 EUR
18+1.02 EUR
100+0.66 EUR
Mindestbestellmenge: 11
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GBU410 5272_GBU410.pdf
GBU410
Hersteller: EVVO
Description: BRIDGE RECT 1PHASE 1KV 4A GBU
Packaging: Box
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.27 EUR
23+0.78 EUR
100+0.5 EUR
Mindestbestellmenge: 14
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GBU608 ds21226.pdf GBU6005-GBU610%20N1791%20REV.A.pdf
GBU608
Hersteller: EVVO
Description: BRIDGE RECT 1PHASE 800V 6A GBU
Packaging: Box
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
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GBU806 5272_GBU806.pdf
GBU806
Hersteller: EVVO
Description: BRIDGE RECT 1PHASE 600V 8A GBU
Packaging: Box
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.39 EUR
21+0.87 EUR
100+0.57 EUR
500+0.44 EUR
Mindestbestellmenge: 13
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GBU808 5272_GBU808.pdf
GBU808
Hersteller: EVVO
Description: BRIDGE RECT 1PHASE 800V 8A GBU
Packaging: Box
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
auf Bestellung 494 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.39 EUR
21+0.87 EUR
100+0.57 EUR
Mindestbestellmenge: 13
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GBU810 5272_GBU810.pdf
GBU810
Hersteller: EVVO
Description: BRIDGE RECT 1PHASE 1KV 8A GBU
Packaging: Box
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 490 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.39 EUR
21+0.87 EUR
100+0.57 EUR
Mindestbestellmenge: 13
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KBL10 5272_KBL10.pdf
KBL10
Hersteller: EVVO
Description: BRIDGE RECT 1PHASE 1KV 4A KBL
Packaging: Box
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 375 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.5 EUR
19+0.94 EUR
100+0.61 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
KBL610 5272_KBL610.pdf
KBL610
Hersteller: EVVO
Description: BRIDGE RECT 1PHASE 1KV 6A KBL
Packaging: Box
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 442 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.5 EUR
19+0.94 EUR
100+0.61 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
KBP206 5272_KBP206.pdf
KBP206
Hersteller: EVVO
Description: BRIDGE RECT 1PHASE 600V 2A KBP
Packaging: Box
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 476 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.77 EUR
37+0.48 EUR
100+0.31 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
KBP208 5272_KBP208.pdf
KBP208
Hersteller: EVVO
Description: BRIDGE RECT 1PHASE 800V 2A KBP
Packaging: Box
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.95 EUR
31+0.58 EUR
100+0.37 EUR
500+0.28 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
KBP210 5272_KBP210.pdf
KBP210
Hersteller: EVVO
Description: BRIDGE RECT 1PHASE 1KV 2A KBP
Packaging: Box
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 475 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.77 EUR
37+0.48 EUR
100+0.31 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
KBP307 5272_KBP307.pdf
KBP307
Hersteller: EVVO
Description: BRIDGE RECT 1PHASE 700V 3A KBP
Packaging: Box
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 700 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 700 V
auf Bestellung 469 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.95 EUR
31+0.58 EUR
100+0.37 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
KBP310 5272_KBP310.pdf
KBP310
Hersteller: EVVO
Description: BRIDGE RECT 1PHASE 1KV 3A KBP
Packaging: Box
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 304 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.95 EUR
31+0.58 EUR
100+0.37 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
KBPC1010
KBPC1010
Hersteller: EVVO
Description: BRIDGE RECT 1PHASE 1KV 10A KBPC
Packaging: Box
Package / Case: 4-Square, KBPC
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
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KBPC1510 5272_KBPC1510.pdf
KBPC1510
Hersteller: EVVO
Description: BRIDGE RECT 1P 1KV 15A KBPC
Packaging: Box
Package / Case: 4-Square, KBPC
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
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KBPC2510 KBPC2510.pdf?rlkey=w5lqc7zvszj7cfwhv7l6p5reo&st=66fu3ldx&dl=0
KBPC2510
Hersteller: EVVO
Description: 25A SINGLE - PHASE SILICON BRIDG
Packaging: Box
Package / Case: 4-Square, KBPC
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C
Technology: Standard
Supplier Device Package: KBPC
Voltage - Peak Reverse (Max): 1000 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 12.5
Current - Reverse Leakage @ Vr: 0.1 mA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KBPC3510 description KBPC3510.pdf?rlkey=igybglwoa5z05kr86n896snem&st=6nfmif4u&dl=0
KBPC3510
Hersteller: EVVO
Description: 35A SINGLE - PHASE SILICON BRIDG
Packaging: Box
Package / Case: 4-Square, KBPC
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C
Technology: Standard
Supplier Device Package: KBPC
Voltage - Peak Reverse (Max): 1000 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 17.5
Current - Reverse Leakage @ Vr: 0.1 mA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KBPC3510W description KBPC3510W.pdf?rlkey=7jt6zc3t2sqsgnxw0zsj7c2sf&st=9xqq0fea&dl=0
KBPC3510W
Hersteller: EVVO
Description: 35A HIGH CURRENT SINGLE-PHASE BR
Packaging: Box
Package / Case: 4-Square, KBPC-W
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C
Technology: Standard
Voltage - Peak Reverse (Max): 1000 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 17.5
Current - Reverse Leakage @ Vr: 0.1 mA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KBPC5010 description KBPC5010.pdf?rlkey=yg1yo2me3dvfnfkezxyu2hhum&st=651c89kk&dl=0
KBPC5010
Hersteller: EVVO
Description: 50A HIGH CURRENT SINGLE-PHASE BR
Packaging: Box
Package / Case: 4-Square, KBPC
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C
Technology: Standard
Supplier Device Package: KBPC
Voltage - Peak Reverse (Max): 1000 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 25.0
Current - Reverse Leakage @ Vr: 0.1 mA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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