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DB201S DB201S EVVO 5272_DB201S.pdf Description: BRIDGE RECT 1PHASE 1KV 2A DBS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBS
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
auf Bestellung 1448 Stücke:
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34+0.63 EUR
100+0.39 EUR
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DB207S DB207S EVVO 5272_DB207S.pdf Description: BRIDGE RECT 1PHASE 1KV 2A DBS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBS
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 1499 Stücke:
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37+0.57 EUR
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DB207S DB207S EVVO 5272_DB207S.pdf Description: BRIDGE RECT 1PHASE 1KV 2A DBS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBS
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 1500 Stücke:
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1500+0.23 EUR
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DMG2305UX-EV DMG2305UX-EV EVVO 5272_DMG2305UX-EV.pdf Description: MOSFET P-CH 20V 4.2A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 886.6 pF @ 10 V
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DMG2305UX-EV DMG2305UX-EV EVVO 5272_DMG2305UX-EV.pdf Description: MOSFET P-CH 20V 4.2A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 886.6 pF @ 10 V
auf Bestellung 1869 Stücke:
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32+0.68 EUR
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500+0.32 EUR
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DS18B20A05 DS18B20A05 EVVO 5272_DS18B20A05.pdf Description: TEMPERATURE SENSORS -55~+125 1.2
Packaging: Bag
auf Bestellung 836 Stücke:
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5+8.23 EUR
10+7.89 EUR
25+7.47 EUR
50+7.19 EUR
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DS18B20A10 DS18B20A10 EVVO 5272_DS18B20A10.pdf Description: TEMPERATURE SENSORS -55~+125 1.2
Features: Standby Mode
Packaging: Bag
Package / Case: Cylindrical Probe, Stainless Steel
Output Type: 1-Wire®
Mounting Type: Free Hanging
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2.5V ~ 5.5V
Sensor Type: Digital
Resolution: 12 b
Test Condition: -55°C ~ 125°C
Accuracy - Highest (Lowest): ±0.4°C
Sensing Temperature - Local: -55°C ~ 125°C
auf Bestellung 741 Stücke:
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5+10.07 EUR
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25+9.15 EUR
50+8.81 EUR
100+8.5 EUR
500+7.87 EUR
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DS18B20A15 DS18B20A15 EVVO DS18B20A15.pdf?rlkey=g43sjhfeiejrwj2lbv91dpu7i&st=jh0ocb9t&dl=0 Description: TEMPERATURE SENSORS -55~+125 1.2
Packaging: Bag
Temperature Range: -55°C ~ 125°C
Terminal Type: Exposed Lead Wires
Length - Lead Wire: 4.921' (1.5m)
Element Type: Temperature Probe
Conductor Type: 3 Conductor System
auf Bestellung 325 Stücke:
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5+11.85 EUR
10+11.38 EUR
25+10.79 EUR
50+10.4 EUR
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DS18B20A20 DS18B20A20 EVVO DS18B20A20.pdf?rlkey=g4pquv8mopdq1nau61crz5xma&st=rqkp16yn&dl=0 Description: TEMPERATURE SENSORS -55~+125 1.2
Packaging: Bag
Temperature Range: -55°C ~ 125°C
Terminal Type: Exposed Lead Wires
Length - Lead Wire: 6.562' (2m)
Element Type: Temperature Probe
Conductor Type: 3 Conductor System
auf Bestellung 416 Stücke:
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5+13.63 EUR
10+13.08 EUR
25+12.42 EUR
50+11.97 EUR
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DS18B20A30 DS18B20A30 EVVO 5272_DS18B20A30.pdf Description: TEMPERATURE SENSORS -55~+125 1.2
Packaging: Bag
Features: Output Switch, Programmable Limit, Programmable Resolution, Standby Mode
Package / Case: Cylindrical Probe, Stainless Steel
Output Type: 1-Wire®
Mounting Type: Free Hanging
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2.5V ~ 5.5V
Sensor Type: Digital, Local/Remote
Resolution: 12 b
Test Condition: -10°C ~ 85°C (-55°C ~ 125°C)
Sensing Temperature - Local: -55°C ~ 125°C
Sensing Temperature - Remote: -55°C ~ 125°C
Accuracy - Highest (Lowest): ±0.4°C (±1.2°C)
auf Bestellung 278 Stücke:
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2+15.6 EUR
5+14.1 EUR
10+13.53 EUR
25+12.86 EUR
60+12.29 EUR
120+11.88 EUR
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DS18B20A50 DS18B20A50 EVVO DS18B20A50.pdf?rlkey=8w1g73rdmjbt9glr9cemcdlrm&st=knpa7bsq&dl=0 Description: TEMPERATURE SENSORS -55~+125 1.2
Packaging: Bag
Temperature Range: -55°C ~ 125°C
Terminal Type: Exposed Lead Wires
Length - Lead Wire: 16.404' (5m)
Element Type: Temperature Probe
Conductor Type: 3 Conductor System
auf Bestellung 125 Stücke:
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10+21.34 EUR
25+20.34 EUR
50+19.65 EUR
100+19.03 EUR
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DS18B20-EV DS18B20-EV EVVO 5272_DS18B20-EV.pdf Description: SENSOR DIGITAL -55C-125C TO92
Features: Standby Mode
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Output Type: 1-Wire®
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2.5V ~ 5.5V
Sensor Type: Digital
Resolution: 12 b
Supplier Device Package: TO-92
Test Condition: -55°C ~ 125°C
Accuracy - Highest (Lowest): ±0.4°C
Sensing Temperature - Local: -55°C ~ 125°C
auf Bestellung 6090 Stücke:
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5+4.44 EUR
10+4.24 EUR
25+4 EUR
50+3.83 EUR
100+3.68 EUR
500+3.38 EUR
1000+3.26 EUR
5000+3.03 EUR
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DS210W DS210W EVVO DS22%20thru%20DS220W.pdf Description: DIODE SCHOTTKY 100V 2A SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
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DS210W DS210W EVVO DS22%20thru%20DS220W.pdf Description: DIODE SCHOTTKY 100V 2A SOD123FL
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
auf Bestellung 835 Stücke:
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71+0.3 EUR
113+0.19 EUR
500+0.13 EUR
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ES1D ES1D EVVO 5272_ES1D.pdf Description: DIODE STANDARD 200V 1A SMA
auf Bestellung 10000 Stücke:
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10000+0.054 EUR
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ES1D ES1D EVVO 5272_ES1D.pdf Description: DIODE STANDARD 200V 1A SMA
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FDC5614P-EV FDC5614P-EV EVVO 5272_FDC5614P-EV.pdf Description: MOSFET P-CH 60V 3A SOT-23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-6
Produkt ist nicht verfügbar
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FDC5614P-EV FDC5614P-EV EVVO 5272_FDC5614P-EV.pdf Description: MOSFET P-CH 60V 3A SOT-23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-6
auf Bestellung 2900 Stücke:
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38+0.56 EUR
42+0.5 EUR
100+0.44 EUR
250+0.4 EUR
500+0.38 EUR
1000+0.37 EUR
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FDN304P-EV FDN304P-EV EVVO 5272_FDN304P-EV.pdf Description: MOSFET P-CH 20V 2.4A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 2.4A, 4.5V
Power Dissipation (Max): 460mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1312 pF @ 10 V
auf Bestellung 3000 Stücke:
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3000+0.36 EUR
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FDN304P-EV FDN304P-EV EVVO 5272_FDN304P-EV.pdf Description: MOSFET P-CH 20V 2.4A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 2.4A, 4.5V
Power Dissipation (Max): 460mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1312 pF @ 10 V
Produkt ist nicht verfügbar
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FDN335N-EV FDN335N-EV EVVO FDN335N-EV.pdf Description: MOSFET N-CH 20V 1.7A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 1.7A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 10 V
Produkt ist nicht verfügbar
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FDN335N-EV FDN335N-EV EVVO FDN335N-EV.pdf Description: MOSFET N-CH 20V 1.7A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 1.7A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 10 V
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3000+0.26 EUR
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FDN337N-EV FDN337N-EV EVVO 5272_FDN337N-EV.pdf Description: MOSFET N-CH 30V 2.2A SOT-23
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 460mW (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 2.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 2574 Stücke:
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100+0.21 EUR
143+0.14 EUR
163+0.13 EUR
194+0.11 EUR
250+0.099 EUR
500+0.093 EUR
1000+0.088 EUR
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FDN337N-EV FDN337N-EV EVVO 5272_FDN337N-EV.pdf Description: MOSFET N-CH 30V 2.2A SOT-23
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 460mW (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 2.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FDN338P-EV FDN338P-EV EVVO 5272_FDN338P-EV.pdf Description: MOSFET P-CH 20V 1.6A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 112mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V
Produkt ist nicht verfügbar
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FDN338P-EV FDN338P-EV EVVO 5272_FDN338P-EV.pdf Description: MOSFET P-CH 20V 1.6A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 112mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V
auf Bestellung 2950 Stücke:
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18+1.21 EUR
28+0.75 EUR
100+0.48 EUR
500+0.37 EUR
1000+0.32 EUR
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FDN340P-EV FDN340P-EV EVVO 5272_FDN340P-EV.pdf Description: MOSFET P-CH 20V 2A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V
Produkt ist nicht verfügbar
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FDN340P-EV FDN340P-EV EVVO 5272_FDN340P-EV.pdf Description: MOSFET P-CH 20V 2A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V
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FDV304P-EV FDV304P-EV EVVO 5272_FDV304P-EV.pdf Description: MOSFET P-CH 25V SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 954 pF @ 15 V
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FDV304P-EV FDV304P-EV EVVO 5272_FDV304P-EV.pdf Description: MOSFET P-CH 25V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 954 pF @ 15 V
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FMMT491 FMMT491 EVVO 5272_FMMT491.pdf Description: TRANS NPN 60V 1A SOT-23
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FMMT491 FMMT491 EVVO 5272_FMMT491.pdf Description: TRANS NPN 60V 1A SOT-23
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FR107 FR107 EVVO 5272_FR107%28Updated%29.pdf description Description: DIODE GEN PURP 1KV 1A
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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FR107 FR107 EVVO 5272_FR107%28Updated%29.pdf description Description: DIODE GEN PURP 1KV 1A
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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FS8205A FS8205A EVVO 5272_FS8205A.pdf Description: DUAL N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 20V
Rds On (Max) @ Id, Vgs: 27mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 17.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-6
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FS8205A FS8205A EVVO 5272_FS8205A.pdf Description: DUAL N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 20V
Rds On (Max) @ Id, Vgs: 27mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 17.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-6
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GBJ1508 GBJ1508 EVVO 5272_GBJ1508.pdf Description: BRIDGE RECT 1PHASE 800V 15A GBJ
Packaging: Box
Package / Case: 4-ESIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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GBJ1510 GBJ1510 EVVO 5272_GBJ1510.pdf Description: BRIDGE RECT 1PHASE 1KV 15A GBJ
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GBJ2508 GBJ2508 EVVO 5272_GBJ2508.pdf Description: BRIDGE RECT 1PHASE 800V 25A GBJ
Packaging: Box
Package / Case: 4-ESIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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GBJ2510 GBJ2510 EVVO 5272_GBJ2510.pdf Description: BRIDGE RECT 1PHASE 1KV 25A GBJ
Packaging: Box
Package / Case: 4-ESIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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GBJ3510 GBJ3510 EVVO 5272_GBJ3510.pdf Description: BRIDGE RECT 1PHASE 1KV 35A GBJ
Packaging: Box
Package / Case: 4-ESIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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GBPC3510 GBPC3510 EVVO GBPC3510.pdf?rlkey=me4333h9kx5mvoxcwr3muoyz1&st=c2r0oz4g&dl=0 Description: 35A GLASS PASSIVATED BRIDGE RECT
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GBPC3510W GBPC3510W EVVO GBPC3510W.pdf?rlkey=k76rdwnxn852m2445jds4lvtt&st=cy1ztnii&dl=0 Description: 35A GLASS PASSIVATED BRIDGE RECT
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GBPC5010W GBPC5010W EVVO GBPC5010W.pdf?rlkey=ai5tup9lct1cbl8a0vkzglp4w&st=a4xub87f&dl=0 Description: 50A GLASS PASSIVATED HIGH CURREN
Packaging: Box
Package / Case: 4-Square, GBPC-W
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 1000 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 25.0
Current - Reverse Leakage @ Vr: 0.1 mA @ 1000 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
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GBU1010 GBU1010 EVVO 5272_GBU1010.pdf Description: BRIDGE RECT 1PHASE 1KV 10A GBU
Packaging: Box
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 486 Stücke:
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GBU406 GBU406 EVVO 5272_GBU406.pdf description Description: BRIDGE RECT 1PHASE 600V 4A GBU
Packaging: Box
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 165 Stücke:
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GBU410 GBU410 EVVO 5272_GBU410.pdf Description: BRIDGE RECT 1PHASE 1KV 4A GBU
Packaging: Box
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 268 Stücke:
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GBU606 GBU606 EVVO 5272_GBU606.pdf Description: BRIDGE RECT 1PHASE 600V 6A GBU
auf Bestellung 886 Stücke:
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GBU608 GBU608 EVVO 5272_GBU608.pdf Description: BRIDGE RECT 1PHASE 800V 6A GBU
Packaging: Box
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
auf Bestellung 365 Stücke:
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GBU610 GBU610 EVVO 5272_GBU610.pdf Description: BRIDGE RECT 1PHASE 1KV 6A GBU
Packaging: Box
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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GBU806 GBU806 EVVO 5272_GBU806.pdf Description: BRIDGE RECT 1PHASE 600V 8A GBU
Packaging: Box
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 479 Stücke:
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GBU808 GBU808 EVVO 5272_GBU808.pdf Description: BRIDGE RECT 1PHASE 800V 8A GBU
auf Bestellung 458 Stücke:
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GBU810 GBU810 EVVO 5272_GBU810.pdf Description: BRIDGE RECT 1PHASE 1KV 8A GBU
auf Bestellung 465 Stücke:
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9+2.59 EUR
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KBL10 KBL10 EVVO 5272_KBL10.pdf Description: BRIDGE RECT 1PHASE 1KV 4A KBL
Packaging: Box
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 532 Stücke:
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KBL608 KBL608 EVVO 5272_KBL608.pdf Description: BRIDGE RECT 1PHASE 800V 6A KBL
Packaging: Box
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
auf Bestellung 476 Stücke:
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KBL610 KBL610 EVVO 5272_KBL610.pdf Description: BRIDGE RECT 1PHASE 1KV 6A KBL
Packaging: Box
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 368 Stücke:
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KBP206 KBP206 EVVO 5272_KBP206.pdf Description: BRIDGE RECT 1PHASE 600V 2A KBP
Packaging: Box
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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KBP208 KBP208 EVVO 5272_KBP208.pdf Description: BRIDGE RECT 1PHASE 800V 2A KBP
Packaging: Box
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 289 Stücke:
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17+1.3 EUR
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KBP210 KBP210 EVVO 5272_KBP210.pdf Description: BRIDGE RECT 1PHASE 1KV 2A KBP
Packaging: Box
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 249 Stücke:
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15+1.43 EUR
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KBP307 KBP307 EVVO 5272_KBP307.pdf Description: BRIDGE RECT 1PHASE 700V 3A KBP
Packaging: Box
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 700 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 700 V
auf Bestellung 2339 Stücke:
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13+1.71 EUR
20+1.07 EUR
100+0.7 EUR
500+0.54 EUR
1000+0.48 EUR
2000+0.44 EUR
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DB201S 5272_DB201S.pdf
DB201S
Hersteller: EVVO
Description: BRIDGE RECT 1PHASE 1KV 2A DBS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBS
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
auf Bestellung 1448 Stücke:
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AnzahlPrivatkunde
21+1 EUR
34+0.63 EUR
100+0.39 EUR
500+0.3 EUR
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DB207S 5272_DB207S.pdf
DB207S
Hersteller: EVVO
Description: BRIDGE RECT 1PHASE 1KV 2A DBS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBS
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 1499 Stücke:
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23+0.94 EUR
37+0.57 EUR
100+0.37 EUR
500+0.27 EUR
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DB207S 5272_DB207S.pdf
DB207S
Hersteller: EVVO
Description: BRIDGE RECT 1PHASE 1KV 2A DBS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBS
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+0.23 EUR
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DMG2305UX-EV 5272_DMG2305UX-EV.pdf
DMG2305UX-EV
Hersteller: EVVO
Description: MOSFET P-CH 20V 4.2A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 886.6 pF @ 10 V
Produkt ist nicht verfügbar
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DMG2305UX-EV 5272_DMG2305UX-EV.pdf
DMG2305UX-EV
Hersteller: EVVO
Description: MOSFET P-CH 20V 4.2A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 886.6 pF @ 10 V
auf Bestellung 1869 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
19+1.11 EUR
32+0.68 EUR
100+0.43 EUR
500+0.32 EUR
1000+0.29 EUR
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DS18B20A05 5272_DS18B20A05.pdf
DS18B20A05
Hersteller: EVVO
Description: TEMPERATURE SENSORS -55~+125 1.2
Packaging: Bag
auf Bestellung 836 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.17 EUR
5+8.23 EUR
10+7.89 EUR
25+7.47 EUR
50+7.19 EUR
100+6.93 EUR
500+6.4 EUR
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DS18B20A10 5272_DS18B20A10.pdf
DS18B20A10
Hersteller: EVVO
Description: TEMPERATURE SENSORS -55~+125 1.2
Features: Standby Mode
Packaging: Bag
Package / Case: Cylindrical Probe, Stainless Steel
Output Type: 1-Wire®
Mounting Type: Free Hanging
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2.5V ~ 5.5V
Sensor Type: Digital
Resolution: 12 b
Test Condition: -55°C ~ 125°C
Accuracy - Highest (Lowest): ±0.4°C
Sensing Temperature - Local: -55°C ~ 125°C
auf Bestellung 741 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+11.19 EUR
5+10.07 EUR
10+9.64 EUR
25+9.15 EUR
50+8.81 EUR
100+8.5 EUR
500+7.87 EUR
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DS18B20A15 DS18B20A15.pdf?rlkey=g43sjhfeiejrwj2lbv91dpu7i&st=jh0ocb9t&dl=0
DS18B20A15
Hersteller: EVVO
Description: TEMPERATURE SENSORS -55~+125 1.2
Packaging: Bag
Temperature Range: -55°C ~ 125°C
Terminal Type: Exposed Lead Wires
Length - Lead Wire: 4.921' (1.5m)
Element Type: Temperature Probe
Conductor Type: 3 Conductor System
auf Bestellung 325 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+13.15 EUR
5+11.85 EUR
10+11.38 EUR
25+10.79 EUR
50+10.4 EUR
100+10.04 EUR
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DS18B20A20 DS18B20A20.pdf?rlkey=g4pquv8mopdq1nau61crz5xma&st=rqkp16yn&dl=0
DS18B20A20
Hersteller: EVVO
Description: TEMPERATURE SENSORS -55~+125 1.2
Packaging: Bag
Temperature Range: -55°C ~ 125°C
Terminal Type: Exposed Lead Wires
Length - Lead Wire: 6.562' (2m)
Element Type: Temperature Probe
Conductor Type: 3 Conductor System
auf Bestellung 416 Stücke:
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AnzahlPrivatkunde
2+15.08 EUR
5+13.63 EUR
10+13.08 EUR
25+12.42 EUR
50+11.97 EUR
100+11.57 EUR
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DS18B20A30 5272_DS18B20A30.pdf
DS18B20A30
Hersteller: EVVO
Description: TEMPERATURE SENSORS -55~+125 1.2
Packaging: Bag
Features: Output Switch, Programmable Limit, Programmable Resolution, Standby Mode
Package / Case: Cylindrical Probe, Stainless Steel
Output Type: 1-Wire®
Mounting Type: Free Hanging
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2.5V ~ 5.5V
Sensor Type: Digital, Local/Remote
Resolution: 12 b
Test Condition: -10°C ~ 85°C (-55°C ~ 125°C)
Sensing Temperature - Local: -55°C ~ 125°C
Sensing Temperature - Remote: -55°C ~ 125°C
Accuracy - Highest (Lowest): ±0.4°C (±1.2°C)
auf Bestellung 278 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+15.6 EUR
5+14.1 EUR
10+13.53 EUR
25+12.86 EUR
60+12.29 EUR
120+11.88 EUR
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DS18B20A50 DS18B20A50.pdf?rlkey=8w1g73rdmjbt9glr9cemcdlrm&st=knpa7bsq&dl=0
DS18B20A50
Hersteller: EVVO
Description: TEMPERATURE SENSORS -55~+125 1.2
Packaging: Bag
Temperature Range: -55°C ~ 125°C
Terminal Type: Exposed Lead Wires
Length - Lead Wire: 16.404' (5m)
Element Type: Temperature Probe
Conductor Type: 3 Conductor System
auf Bestellung 125 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+24.42 EUR
5+22.17 EUR
10+21.34 EUR
25+20.34 EUR
50+19.65 EUR
100+19.03 EUR
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DS18B20-EV 5272_DS18B20-EV.pdf
DS18B20-EV
Hersteller: EVVO
Description: SENSOR DIGITAL -55C-125C TO92
Features: Standby Mode
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Output Type: 1-Wire®
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2.5V ~ 5.5V
Sensor Type: Digital
Resolution: 12 b
Supplier Device Package: TO-92
Test Condition: -55°C ~ 125°C
Accuracy - Highest (Lowest): ±0.4°C
Sensing Temperature - Local: -55°C ~ 125°C
auf Bestellung 6090 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.44 EUR
10+4.24 EUR
25+4 EUR
50+3.83 EUR
100+3.68 EUR
500+3.38 EUR
1000+3.26 EUR
5000+3.03 EUR
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DS210W DS22%20thru%20DS220W.pdf
DS210W
Hersteller: EVVO
Description: DIODE SCHOTTKY 100V 2A SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
Produkt ist nicht verfügbar
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DS210W DS22%20thru%20DS220W.pdf
DS210W
Hersteller: EVVO
Description: DIODE SCHOTTKY 100V 2A SOD123FL
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
auf Bestellung 835 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
44+0.48 EUR
71+0.3 EUR
113+0.19 EUR
500+0.13 EUR
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ES1D 5272_ES1D.pdf
ES1D
Hersteller: EVVO
Description: DIODE STANDARD 200V 1A SMA
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2000+0.07 EUR
4000+0.063 EUR
6000+0.058 EUR
10000+0.054 EUR
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ES1D 5272_ES1D.pdf
ES1D
Hersteller: EVVO
Description: DIODE STANDARD 200V 1A SMA
auf Bestellung 27 Stücke:
Lieferzeit 10-14 Tag (e)
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FDC5614P-EV 5272_FDC5614P-EV.pdf
FDC5614P-EV
Hersteller: EVVO
Description: MOSFET P-CH 60V 3A SOT-23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-6
Produkt ist nicht verfügbar
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FDC5614P-EV 5272_FDC5614P-EV.pdf
FDC5614P-EV
Hersteller: EVVO
Description: MOSFET P-CH 60V 3A SOT-23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-6
auf Bestellung 2900 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
26+0.82 EUR
38+0.56 EUR
42+0.5 EUR
100+0.44 EUR
250+0.4 EUR
500+0.38 EUR
1000+0.37 EUR
Mindestbestellmenge: 26 Stücke
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FDN304P-EV 5272_FDN304P-EV.pdf
FDN304P-EV
Hersteller: EVVO
Description: MOSFET P-CH 20V 2.4A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 2.4A, 4.5V
Power Dissipation (Max): 460mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1312 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.36 EUR
Mindestbestellmenge: 3000 Stücke
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FDN304P-EV 5272_FDN304P-EV.pdf
FDN304P-EV
Hersteller: EVVO
Description: MOSFET P-CH 20V 2.4A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 2.4A, 4.5V
Power Dissipation (Max): 460mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1312 pF @ 10 V
Produkt ist nicht verfügbar
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FDN335N-EV FDN335N-EV.pdf
FDN335N-EV
Hersteller: EVVO
Description: MOSFET N-CH 20V 1.7A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 1.7A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 10 V
Produkt ist nicht verfügbar
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FDN335N-EV FDN335N-EV.pdf
FDN335N-EV
Hersteller: EVVO
Description: MOSFET N-CH 20V 1.7A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 1.7A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.26 EUR
Mindestbestellmenge: 3000 Stücke
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FDN337N-EV 5272_FDN337N-EV.pdf
FDN337N-EV
Hersteller: EVVO
Description: MOSFET N-CH 30V 2.2A SOT-23
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 460mW (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 2.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 2574 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
100+0.21 EUR
143+0.14 EUR
163+0.13 EUR
194+0.11 EUR
250+0.099 EUR
500+0.093 EUR
1000+0.088 EUR
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FDN337N-EV 5272_FDN337N-EV.pdf
FDN337N-EV
Hersteller: EVVO
Description: MOSFET N-CH 30V 2.2A SOT-23
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 460mW (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 2.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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FDN338P-EV 5272_FDN338P-EV.pdf
FDN338P-EV
Hersteller: EVVO
Description: MOSFET P-CH 20V 1.6A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 112mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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FDN338P-EV 5272_FDN338P-EV.pdf
FDN338P-EV
Hersteller: EVVO
Description: MOSFET P-CH 20V 1.6A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 112mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V
auf Bestellung 2950 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
18+1.21 EUR
28+0.75 EUR
100+0.48 EUR
500+0.37 EUR
1000+0.32 EUR
Mindestbestellmenge: 18 Stücke
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FDN340P-EV 5272_FDN340P-EV.pdf
FDN340P-EV
Hersteller: EVVO
Description: MOSFET P-CH 20V 2A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V
Produkt ist nicht verfügbar
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FDN340P-EV 5272_FDN340P-EV.pdf
FDN340P-EV
Hersteller: EVVO
Description: MOSFET P-CH 20V 2A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V
auf Bestellung 1554 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
72+0.3 EUR
105+0.2 EUR
120+0.18 EUR
142+0.14 EUR
250+0.13 EUR
1000+0.12 EUR
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FDV304P-EV 5272_FDV304P-EV.pdf
FDV304P-EV
Hersteller: EVVO
Description: MOSFET P-CH 25V SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 954 pF @ 15 V
auf Bestellung 2360 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
39+0.55 EUR
63+0.33 EUR
101+0.21 EUR
500+0.15 EUR
1000+0.13 EUR
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FDV304P-EV 5272_FDV304P-EV.pdf
FDV304P-EV
Hersteller: EVVO
Description: MOSFET P-CH 25V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 954 pF @ 15 V
Produkt ist nicht verfügbar
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FMMT491 5272_FMMT491.pdf
FMMT491
Hersteller: EVVO
Description: TRANS NPN 60V 1A SOT-23
auf Bestellung 182 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
29+0.74 EUR
47+0.45 EUR
100+0.29 EUR
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FMMT491 5272_FMMT491.pdf
FMMT491
Hersteller: EVVO
Description: TRANS NPN 60V 1A SOT-23
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.15 EUR
6000+0.14 EUR
9000+0.13 EUR
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FR107 description 5272_FR107%28Updated%29.pdf
FR107
Hersteller: EVVO
Description: DIODE GEN PURP 1KV 1A
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.23 EUR
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FR107 description 5272_FR107%28Updated%29.pdf
FR107
Hersteller: EVVO
Description: DIODE GEN PURP 1KV 1A
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 2673 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
22+0.99 EUR
35+0.62 EUR
100+0.39 EUR
500+0.3 EUR
1000+0.26 EUR
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FS8205A 5272_FS8205A.pdf
FS8205A
Hersteller: EVVO
Description: DUAL N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 20V
Rds On (Max) @ Id, Vgs: 27mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 17.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-6
auf Bestellung 5934 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.27 EUR
Mindestbestellmenge: 3000 Stücke
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FS8205A 5272_FS8205A.pdf
FS8205A
Hersteller: EVVO
Description: DUAL N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 20V
Rds On (Max) @ Id, Vgs: 27mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 17.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-6
Produkt ist nicht verfügbar
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GBJ1508 5272_GBJ1508.pdf
GBJ1508
Hersteller: EVVO
Description: BRIDGE RECT 1PHASE 800V 15A GBJ
Packaging: Box
Package / Case: 4-ESIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
auf Bestellung 205 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.37 EUR
10+2.15 EUR
100+1.44 EUR
Mindestbestellmenge: 7 Stücke
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GBJ1510 5272_GBJ1510.pdf
GBJ1510
Hersteller: EVVO
Description: BRIDGE RECT 1PHASE 1KV 15A GBJ
auf Bestellung 250 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.8 EUR
10+2.42 EUR
100+1.63 EUR
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GBJ2508 5272_GBJ2508.pdf
GBJ2508
Hersteller: EVVO
Description: BRIDGE RECT 1PHASE 800V 25A GBJ
Packaging: Box
Package / Case: 4-ESIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
auf Bestellung 1923 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.33 EUR
10+2.12 EUR
100+1.43 EUR
500+1.13 EUR
1000+1.04 EUR
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GBJ2510 5272_GBJ2510.pdf
GBJ2510
Hersteller: EVVO
Description: BRIDGE RECT 1PHASE 1KV 25A GBJ
Packaging: Box
Package / Case: 4-ESIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 105 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.77 EUR
10+3.07 EUR
100+2.09 EUR
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GBJ3510 5272_GBJ3510.pdf
GBJ3510
Hersteller: EVVO
Description: BRIDGE RECT 1PHASE 1KV 35A GBJ
Packaging: Box
Package / Case: 4-ESIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 115 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+5.11 EUR
10+3.3 EUR
100+2.26 EUR
Mindestbestellmenge: 5 Stücke
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GBPC3510 GBPC3510.pdf?rlkey=me4333h9kx5mvoxcwr3muoyz1&st=c2r0oz4g&dl=0
GBPC3510
Hersteller: EVVO
Description: 35A GLASS PASSIVATED BRIDGE RECT
Produkt ist nicht verfügbar
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GBPC3510W GBPC3510W.pdf?rlkey=k76rdwnxn852m2445jds4lvtt&st=cy1ztnii&dl=0
GBPC3510W
Hersteller: EVVO
Description: 35A GLASS PASSIVATED BRIDGE RECT
auf Bestellung 77 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.51 EUR
10+5.62 EUR
Mindestbestellmenge: 3 Stücke
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GBPC5010W GBPC5010W.pdf?rlkey=ai5tup9lct1cbl8a0vkzglp4w&st=a4xub87f&dl=0
GBPC5010W
Hersteller: EVVO
Description: 50A GLASS PASSIVATED HIGH CURREN
Packaging: Box
Package / Case: 4-Square, GBPC-W
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 1000 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 25.0
Current - Reverse Leakage @ Vr: 0.1 mA @ 1000 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
auf Bestellung 87 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.25 EUR
10+5.45 EUR
Mindestbestellmenge: 3 Stücke
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GBU1010 5272_GBU1010.pdf
GBU1010
Hersteller: EVVO
Description: BRIDGE RECT 1PHASE 1KV 10A GBU
Packaging: Box
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 486 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.78 EUR
12+1.76 EUR
100+1.17 EUR
Mindestbestellmenge: 8 Stücke
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GBU406 description 5272_GBU406.pdf
GBU406
Hersteller: EVVO
Description: BRIDGE RECT 1PHASE 600V 4A GBU
Packaging: Box
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 165 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.31 EUR
15+1.45 EUR
100+0.95 EUR
Mindestbestellmenge: 10 Stücke
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GBU410 5272_GBU410.pdf
GBU410
Hersteller: EVVO
Description: BRIDGE RECT 1PHASE 1KV 4A GBU
Packaging: Box
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 268 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
13+1.71 EUR
20+1.07 EUR
100+0.69 EUR
Mindestbestellmenge: 13 Stücke
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GBU606 5272_GBU606.pdf
GBU606
Hersteller: EVVO
Description: BRIDGE RECT 1PHASE 600V 6A GBU
auf Bestellung 886 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+1.99 EUR
17+1.24 EUR
100+0.81 EUR
500+0.62 EUR
Mindestbestellmenge: 11 Stücke
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GBU608 5272_GBU608.pdf
GBU608
Hersteller: EVVO
Description: BRIDGE RECT 1PHASE 800V 6A GBU
Packaging: Box
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
auf Bestellung 365 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+1.95 EUR
18+1.21 EUR
100+0.79 EUR
Mindestbestellmenge: 11 Stücke
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GBU610 5272_GBU610.pdf
GBU610
Hersteller: EVVO
Description: BRIDGE RECT 1PHASE 1KV 6A GBU
Packaging: Box
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+1.93 EUR
18+1.2 EUR
100+0.79 EUR
500+0.61 EUR
Mindestbestellmenge: 11 Stücke
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GBU806 5272_GBU806.pdf
GBU806
Hersteller: EVVO
Description: BRIDGE RECT 1PHASE 600V 8A GBU
Packaging: Box
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 479 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.59 EUR
13+1.62 EUR
100+1.07 EUR
Mindestbestellmenge: 9 Stücke
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GBU808 5272_GBU808.pdf
GBU808
Hersteller: EVVO
Description: BRIDGE RECT 1PHASE 800V 8A GBU
auf Bestellung 458 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.59 EUR
13+1.62 EUR
100+1.07 EUR
Mindestbestellmenge: 9 Stücke
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GBU810 5272_GBU810.pdf
GBU810
Hersteller: EVVO
Description: BRIDGE RECT 1PHASE 1KV 8A GBU
auf Bestellung 465 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.59 EUR
13+1.62 EUR
100+1.07 EUR
Mindestbestellmenge: 9 Stücke
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KBL10 5272_KBL10.pdf
KBL10
Hersteller: EVVO
Description: BRIDGE RECT 1PHASE 1KV 4A KBL
Packaging: Box
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 532 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+2.07 EUR
17+1.3 EUR
100+0.84 EUR
500+0.65 EUR
Mindestbestellmenge: 11 Stücke
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KBL608 5272_KBL608.pdf
KBL608
Hersteller: EVVO
Description: BRIDGE RECT 1PHASE 800V 6A KBL
Packaging: Box
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
auf Bestellung 476 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.75 EUR
13+1.74 EUR
100+1.15 EUR
Mindestbestellmenge: 8 Stücke
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KBL610 5272_KBL610.pdf
KBL610
Hersteller: EVVO
Description: BRIDGE RECT 1PHASE 1KV 6A KBL
Packaging: Box
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 368 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.75 EUR
13+1.74 EUR
100+1.15 EUR
Mindestbestellmenge: 8 Stücke
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KBP206 5272_KBP206.pdf
KBP206
Hersteller: EVVO
Description: BRIDGE RECT 1PHASE 600V 2A KBP
Packaging: Box
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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KBP208 5272_KBP208.pdf
KBP208
Hersteller: EVVO
Description: BRIDGE RECT 1PHASE 800V 2A KBP
Packaging: Box
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 289 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
17+1.3 EUR
27+0.8 EUR
100+0.51 EUR
Mindestbestellmenge: 17 Stücke
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KBP210 5272_KBP210.pdf
KBP210
Hersteller: EVVO
Description: BRIDGE RECT 1PHASE 1KV 2A KBP
Packaging: Box
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 249 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
15+1.43 EUR
24+0.89 EUR
100+0.57 EUR
Mindestbestellmenge: 15 Stücke
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KBP307 5272_KBP307.pdf
KBP307
Hersteller: EVVO
Description: BRIDGE RECT 1PHASE 700V 3A KBP
Packaging: Box
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 700 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 700 V
auf Bestellung 2339 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
13+1.71 EUR
20+1.07 EUR
100+0.7 EUR
500+0.54 EUR
1000+0.48 EUR
2000+0.44 EUR
Mindestbestellmenge: 13 Stücke
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