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FF07035FA FF07035FA fastSiC Datasheet_FF07035FA.pdf Description: SICFET N-CH 750V 61A TOLL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 22A, 18V
Power Dissipation (Max): 267W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 40mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2818 pF @ 500 V
auf Bestellung 300 Stücke:
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FF07035J-7A FF07035J-7A fastSiC Datasheet_FF07035J-7A.pdf Description: SICFET N-CH 750V 61A TO-263-7L
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 22A, 18V
Power Dissipation (Max): 267W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 40mA
Supplier Device Package: TO-263-7L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2818 pF @ 500 V
auf Bestellung 300 Stücke:
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FF07035QA FF07035QA fastSiC Datasheet_FF07035QA.pdf Description: SICFET N-CH 750V 62A TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 22A, 18V
Power Dissipation (Max): 277W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 40mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2818 pF @ 500 V
auf Bestellung 300 Stücke:
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FF07075E-3A FF07075E-3A fastSiC Datasheet_FF07075E-3A.pdf Description: SICFET N-CH 750V 34A TO-247-3L
Packaging: Tube
Package / Case: TO-247-3
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 10A, 18V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 20mA
Supplier Device Package: TO-247-3L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1564 pF @ 500 V
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FF07075FA FF07075FA fastSiC Datasheet_FF07075FA.pdf Description: SICFET N-CH 750V 36A TOLL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 10A, 18V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 20mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1564 pF @ 500 V
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FF07075J-7A FF07075J-7A fastSiC Datasheet_FF07075J-7A.pdf Description: SICFET N-CH 750V 36A TO-263-7L
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 10A, 18V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 20mA
Supplier Device Package: TO-263-7L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1564 pF @ 500 V
auf Bestellung 300 Stücke:
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FF07075QA FF07075QA fastSiC Datasheet_FF07075QA.pdf Description: SICFET N-CH 750V 34A TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 10A, 18V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 20mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1564 pF @ 500 V
auf Bestellung 300 Stücke:
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FF07150M2D FF07150M2D fastSiC FF07150M2D.pdf Description: SICFET N-CH 750V 14A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 194mOhm @ 5A, 15V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 6mA
Supplier Device Package: TO-220-3 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 12V, 15V
Vgs (Max): +15V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 500 V
Input Capacitance (Ciss) (Max) @ Vds: 687 pF @ 500 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FF12040J-7 FF12040J-7 fastSiC FF12040J-7.PDF Description: SICFET N-CH 1200V 45A TO-263-7L
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 20A, 18V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 40mA (Typ)
Supplier Device Package: TO-263-7L
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 800 V
Input Capacitance (Ciss) (Max) @ Vds: 3129 pF @ 800 V
auf Bestellung 278 Stücke:
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FF12040QA FF12040QA fastSiC Datasheet_FF12040QA.pdf Description: SICFET N-CH 1200V 54A TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 20A, 18V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 40mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3129 pF @ 800 V
auf Bestellung 300 Stücke:
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FF12080E-3A FF12080E-3A fastSiC Datasheet_FF12080E-3A.pdf Description: SICFET N-CH 1200V 29A TO-247-3L
Packaging: Tube
Package / Case: TO-247-3
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 112mOhm @ 8A, 18V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 20mA
Supplier Device Package: TO-247-3L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1548 pF @ 800 V
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FF12080J-7A FF12080J-7A fastSiC FF12080J-7A.PDF Description: SICFET N-CH 1200V 31A TO-263-7L
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 112mOhm @ 8A, 18V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 20mA
Supplier Device Package: D2PAK-7L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): 18V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1548 pF @ 800 V
auf Bestellung 300 Stücke:
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FF12080QA FF12080QA fastSiC Datasheet_FF12080QA.pdf Description: SICFET N-CH 1200V 29A TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 112mOhm @ 8A, 18V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 20mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1548 pF @ 800 V
auf Bestellung 295 Stücke:
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FF17900J-7 FF17900J-7 fastSiC FF17900J-7.PDF Description: SICFET N-CH 1700V 4.5A TO-263-7L
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 500mA, 18V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: D2PAK-7L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): 18V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 266 pF @ 1.2 kV
auf Bestellung 290 Stücke:
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FH06004A FH06004A fastSiC Datasheet_FH06004A.pdf Description: DIODE SIL CARB 650V 4A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-2
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 16pF @ 400V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-252 (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 4 A
Current - Reverse Leakage @ Vr: 0.6 µA @ 520 V
Qualification: AEC-Q101
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FH06004C FH06004C fastSiC Datasheet_FH06004C.pdf Description: DIODE SIL CARB 650V 4A TO-220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 16pF @ 400V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 4 A
Current - Reverse Leakage @ Vr: 0.6 µA @ 520 V
Qualification: AEC-Q101
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FH06004D FH06004D fastSiC Datasheet_FH06004D.pdf Description: DIODE SIL CARB 650V 4A TO-220FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 16pF @ 400V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-220 Full Pack
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 4 A
Current - Reverse Leakage @ Vr: 0.6 µA @ 520 V
Qualification: AEC-Q101
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FH06004Y FH06004Y fastSiC Datasheet_FH06004Y.pdf Description: DIODE SIL CARB 650V 4A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 16pF @ 400V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 4 A
Current - Reverse Leakage @ Vr: 35 µA @ 520 V
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FH06004Z FH06004Z fastSiC 5700_Datasheet_FH06004Z.pdf Description: DIODE SIL CARB 650V 4A SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 16pF @ 400V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 4 A
Current - Reverse Leakage @ Vr: 0.6 µA @ 520 V
auf Bestellung 1425 Stücke:
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FH06006C FH06006C fastSiC Datasheet_FH06006C.pdf Description: DIODE SIL CARB 650V 6A TO-220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 24pF @ 400V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 520 V
Qualification: AEC-Q101
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FH06006D FH06006D fastSiC Datasheet_FH06006D.pdf Description: DIODE SIL CARB 650V 6A TO-220FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 24pF @ 400V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220 Full Pack
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 520 V
Qualification: AEC-Q101
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FH06010C FH06010C fastSiC Datasheet_FH06010C.pdf Description: DIODE SIL CARB 650V 10A TO-220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 33pF @ 400V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Current - Reverse Leakage @ Vr: 2 µA @ 520 V
Qualification: AEC-Q101
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FH06010D FH06010D fastSiC Datasheet_FH06010D.pdf Description: DIODE SIL CARB 650V 10A TO-220FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 33pF @ 400V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220 Full Pack
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Current - Reverse Leakage @ Vr: 2 µA @ 520 V
Qualification: AEC-Q101
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FH06020E-2 FH06020E-2 fastSiC Datasheet_FH06020E-2.pdf Description: DIODE SIL CARB 650V 20A TO-247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 66pF @ 400V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 4 µA @ 520 V
Qualification: AEC-Q101
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FL06100G FL06100G fastSiC FL06100G.PDF Description: SICFET N-CH 650V 22A PDFN8x8
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 15V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 14mA
Supplier Device Package: 4-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): 15V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1129 pF @ 400 V
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FL06150A FL06150A fastSiC FL06150A.PDF Description: SICFET N-CH 650V 15A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5A, 15V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 8mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): 15V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 672 pF @ 400 V
auf Bestellung 1950 Stücke:
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FL06150G FL06150G fastSiC FL06150G.PDF Description: SICFET N-CH 650V 15A PDFN8x8
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5A, 15V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 8mA
Supplier Device Package: 4-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): 15V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 672 pF @ 400 V
auf Bestellung 290 Stücke:
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FL06250A FL06250A fastSiC FL06250A.PDF Description: SICFET N-CH 650V 10.7A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.7A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 3A, 15V
Power Dissipation (Max): 46.8W (Tc)
Vgs(th) (Max) @ Id: 2V @ 6mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): 15V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 436 pF @ 400 V
auf Bestellung 2500 Stücke:
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FL06250G FL06250G fastSiC FL06250G.PDF Description: SICFET N-CH 650V 10.7A PDFN8x8
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.7A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 3A, 15V
Power Dissipation (Max): 46.8W (Tc)
Vgs(th) (Max) @ Id: 2V @ 6mA
Supplier Device Package: 4-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): 15V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 436 pF @ 400 V
auf Bestellung 300 Stücke:
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FL06320A FL06320A fastSiC FL06320A.PDF Description: SICFET N-CH 650V 8.8A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 2A, 15V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 4mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): 15V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 400 V
auf Bestellung 480 Stücke:
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FL06320B FL06320B fastSiC FL06320B.PDF Description: SICFET N-CH 650V 8.8A PQFN5x6
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 2A, 15V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 4mA (Typ)
Supplier Device Package: 8-PQFN (5x6), Power56
Drive Voltage (Max Rds On, Min Rds On): 12V, 15V
Vgs (Max): 15V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.9 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 400 V
auf Bestellung 487 Stücke:
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FL06320G FL06320G fastSiC FL06320G.PDF Description: SICFET N-CH 650V 8.8A PDFN8x8
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 2A, 15V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 4mA
Supplier Device Package: 4-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): 15V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 400 V
auf Bestellung 290 Stücke:
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FL06500A FL06500A fastSiC FL06500A.PDF Description: SICFET N-CH 650V 6.1A TO-252
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 1A, 15V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 3mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): 15V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10.3 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 223 pF @ 400 V
Packaging: Tape & Reel (TR)
auf Bestellung 169 Stücke:
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7+3.44 EUR
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FF07035FA Datasheet_FF07035FA.pdf
FF07035FA
Hersteller: fastSiC
Description: SICFET N-CH 750V 61A TOLL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 22A, 18V
Power Dissipation (Max): 267W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 40mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2818 pF @ 500 V
auf Bestellung 300 Stücke:
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1+38.25 EUR
10+14.02 EUR
100+13.07 EUR
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FF07035J-7A Datasheet_FF07035J-7A.pdf
FF07035J-7A
Hersteller: fastSiC
Description: SICFET N-CH 750V 61A TO-263-7L
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 22A, 18V
Power Dissipation (Max): 267W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 40mA
Supplier Device Package: TO-263-7L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2818 pF @ 500 V
auf Bestellung 300 Stücke:
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1+38.25 EUR
10+14.02 EUR
100+13.07 EUR
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FF07035QA Datasheet_FF07035QA.pdf
FF07035QA
Hersteller: fastSiC
Description: SICFET N-CH 750V 62A TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 22A, 18V
Power Dissipation (Max): 277W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 40mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2818 pF @ 500 V
auf Bestellung 300 Stücke:
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10+14.29 EUR
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FF07075E-3A Datasheet_FF07075E-3A.pdf
FF07075E-3A
Hersteller: fastSiC
Description: SICFET N-CH 750V 34A TO-247-3L
Packaging: Tube
Package / Case: TO-247-3
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 10A, 18V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 20mA
Supplier Device Package: TO-247-3L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1564 pF @ 500 V
auf Bestellung 300 Stücke:
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1+22.47 EUR
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FF07075FA Datasheet_FF07075FA.pdf
FF07075FA
Hersteller: fastSiC
Description: SICFET N-CH 750V 36A TOLL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 10A, 18V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 20mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1564 pF @ 500 V
auf Bestellung 300 Stücke:
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1+21.74 EUR
10+7.97 EUR
100+7.43 EUR
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FF07075J-7A Datasheet_FF07075J-7A.pdf
FF07075J-7A
Hersteller: fastSiC
Description: SICFET N-CH 750V 36A TO-263-7L
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 10A, 18V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 20mA
Supplier Device Package: TO-263-7L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1564 pF @ 500 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
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1+21.74 EUR
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100+7.43 EUR
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FF07075QA Datasheet_FF07075QA.pdf
FF07075QA
Hersteller: fastSiC
Description: SICFET N-CH 750V 34A TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 10A, 18V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 20mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1564 pF @ 500 V
auf Bestellung 300 Stücke:
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1+22.47 EUR
10+8.23 EUR
100+7.68 EUR
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FF07150M2D FF07150M2D.pdf
FF07150M2D
Hersteller: fastSiC
Description: SICFET N-CH 750V 14A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 194mOhm @ 5A, 15V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 6mA
Supplier Device Package: TO-220-3 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 12V, 15V
Vgs (Max): +15V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 500 V
Input Capacitance (Ciss) (Max) @ Vds: 687 pF @ 500 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FF12040J-7 FF12040J-7.PDF
FF12040J-7
Hersteller: fastSiC
Description: SICFET N-CH 1200V 45A TO-263-7L
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 20A, 18V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 40mA (Typ)
Supplier Device Package: TO-263-7L
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 800 V
Input Capacitance (Ciss) (Max) @ Vds: 3129 pF @ 800 V
auf Bestellung 278 Stücke:
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1+40.4 EUR
10+14.79 EUR
100+13.8 EUR
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FF12040QA Datasheet_FF12040QA.pdf
FF12040QA
Hersteller: fastSiC
Description: SICFET N-CH 1200V 54A TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 20A, 18V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 40mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3129 pF @ 800 V
auf Bestellung 300 Stücke:
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FF12080E-3A Datasheet_FF12080E-3A.pdf
FF12080E-3A
Hersteller: fastSiC
Description: SICFET N-CH 1200V 29A TO-247-3L
Packaging: Tube
Package / Case: TO-247-3
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 112mOhm @ 8A, 18V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 20mA
Supplier Device Package: TO-247-3L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1548 pF @ 800 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+23.67 EUR
10+8.68 EUR
100+8.08 EUR
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FF12080J-7A FF12080J-7A.PDF
FF12080J-7A
Hersteller: fastSiC
Description: SICFET N-CH 1200V 31A TO-263-7L
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 112mOhm @ 8A, 18V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 20mA
Supplier Device Package: D2PAK-7L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): 18V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1548 pF @ 800 V
auf Bestellung 300 Stücke:
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FF12080QA Datasheet_FF12080QA.pdf
FF12080QA
Hersteller: fastSiC
Description: SICFET N-CH 1200V 29A TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 112mOhm @ 8A, 18V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 20mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1548 pF @ 800 V
auf Bestellung 295 Stücke:
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FF17900J-7 FF17900J-7.PDF
FF17900J-7
Hersteller: fastSiC
Description: SICFET N-CH 1700V 4.5A TO-263-7L
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 500mA, 18V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: D2PAK-7L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): 18V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 266 pF @ 1.2 kV
auf Bestellung 290 Stücke:
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FH06004A Datasheet_FH06004A.pdf
FH06004A
Hersteller: fastSiC
Description: DIODE SIL CARB 650V 4A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-2
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 16pF @ 400V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-252 (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 4 A
Current - Reverse Leakage @ Vr: 0.6 µA @ 520 V
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
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12+1.76 EUR
15+1.48 EUR
100+0.67 EUR
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FH06004C Datasheet_FH06004C.pdf
FH06004C
Hersteller: fastSiC
Description: DIODE SIL CARB 650V 4A TO-220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 16pF @ 400V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 4 A
Current - Reverse Leakage @ Vr: 0.6 µA @ 520 V
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
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8+2.68 EUR
10+2.24 EUR
100+1.01 EUR
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FH06004D Datasheet_FH06004D.pdf
FH06004D
Hersteller: fastSiC
Description: DIODE SIL CARB 650V 4A TO-220FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 16pF @ 400V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-220 Full Pack
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 4 A
Current - Reverse Leakage @ Vr: 0.6 µA @ 520 V
Qualification: AEC-Q101
auf Bestellung 800 Stücke:
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8+2.68 EUR
10+2.24 EUR
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FH06004Y Datasheet_FH06004Y.pdf
FH06004Y
Hersteller: fastSiC
Description: DIODE SIL CARB 650V 4A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 16pF @ 400V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 4 A
Current - Reverse Leakage @ Vr: 35 µA @ 520 V
auf Bestellung 1000 Stücke:
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5+4.33 EUR
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FH06004Z 5700_Datasheet_FH06004Z.pdf
FH06004Z
Hersteller: fastSiC
Description: DIODE SIL CARB 650V 4A SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 16pF @ 400V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 4 A
Current - Reverse Leakage @ Vr: 0.6 µA @ 520 V
auf Bestellung 1425 Stücke:
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FH06006C Datasheet_FH06006C.pdf
FH06006C
Hersteller: fastSiC
Description: DIODE SIL CARB 650V 6A TO-220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 24pF @ 400V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 520 V
Qualification: AEC-Q101
auf Bestellung 4555 Stücke:
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8+2.98 EUR
10+2.49 EUR
100+1.12 EUR
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FH06006D Datasheet_FH06006D.pdf
FH06006D
Hersteller: fastSiC
Description: DIODE SIL CARB 650V 6A TO-220FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 24pF @ 400V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220 Full Pack
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 520 V
Qualification: AEC-Q101
auf Bestellung 4652 Stücke:
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8+2.99 EUR
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FH06010C Datasheet_FH06010C.pdf
FH06010C
Hersteller: fastSiC
Description: DIODE SIL CARB 650V 10A TO-220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 33pF @ 400V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Current - Reverse Leakage @ Vr: 2 µA @ 520 V
Qualification: AEC-Q101
auf Bestellung 446 Stücke:
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8+2.98 EUR
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FH06010D Datasheet_FH06010D.pdf
FH06010D
Hersteller: fastSiC
Description: DIODE SIL CARB 650V 10A TO-220FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 33pF @ 400V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220 Full Pack
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Current - Reverse Leakage @ Vr: 2 µA @ 520 V
Qualification: AEC-Q101
auf Bestellung 2312 Stücke:
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8+2.98 EUR
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FH06020E-2 Datasheet_FH06020E-2.pdf
FH06020E-2
Hersteller: fastSiC
Description: DIODE SIL CARB 650V 20A TO-247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 66pF @ 400V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 4 µA @ 520 V
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
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3+9.29 EUR
10+7.75 EUR
100+3.49 EUR
600+3.09 EUR
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FL06100G FL06100G.PDF
FL06100G
Hersteller: fastSiC
Description: SICFET N-CH 650V 22A PDFN8x8
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 15V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 14mA
Supplier Device Package: 4-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): 15V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1129 pF @ 400 V
auf Bestellung 200 Stücke:
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2+14.66 EUR
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100+5.01 EUR
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FL06150A FL06150A.PDF
FL06150A
Hersteller: fastSiC
Description: SICFET N-CH 650V 15A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5A, 15V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 8mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): 15V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 672 pF @ 400 V
auf Bestellung 1950 Stücke:
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3+8.46 EUR
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FL06150G FL06150G.PDF
FL06150G
Hersteller: fastSiC
Description: SICFET N-CH 650V 15A PDFN8x8
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5A, 15V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 8mA
Supplier Device Package: 4-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): 15V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 672 pF @ 400 V
auf Bestellung 290 Stücke:
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FL06250A FL06250A.PDF
FL06250A
Hersteller: fastSiC
Description: SICFET N-CH 650V 10.7A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.7A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 3A, 15V
Power Dissipation (Max): 46.8W (Tc)
Vgs(th) (Max) @ Id: 2V @ 6mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): 15V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 436 pF @ 400 V
auf Bestellung 2500 Stücke:
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4+5.45 EUR
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FL06250G FL06250G.PDF
FL06250G
Hersteller: fastSiC
Description: SICFET N-CH 650V 10.7A PDFN8x8
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.7A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 3A, 15V
Power Dissipation (Max): 46.8W (Tc)
Vgs(th) (Max) @ Id: 2V @ 6mA
Supplier Device Package: 4-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): 15V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 436 pF @ 400 V
auf Bestellung 300 Stücke:
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4+6.83 EUR
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FL06320A FL06320A.PDF
FL06320A
Hersteller: fastSiC
Description: SICFET N-CH 650V 8.8A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 2A, 15V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 4mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): 15V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 400 V
auf Bestellung 480 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.57 EUR
13+1.67 EUR
100+1.56 EUR
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FL06320B FL06320B.PDF
FL06320B
Hersteller: fastSiC
Description: SICFET N-CH 650V 8.8A PQFN5x6
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 2A, 15V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 4mA (Typ)
Supplier Device Package: 8-PQFN (5x6), Power56
Drive Voltage (Max Rds On, Min Rds On): 12V, 15V
Vgs (Max): 15V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.9 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 400 V
auf Bestellung 487 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.57 EUR
13+1.67 EUR
100+1.56 EUR
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FL06320G FL06320G.PDF
FL06320G
Hersteller: fastSiC
Description: SICFET N-CH 650V 8.8A PDFN8x8
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 2A, 15V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 4mA
Supplier Device Package: 4-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): 15V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 400 V
auf Bestellung 290 Stücke:
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4+5.95 EUR
10+2.19 EUR
100+2.03 EUR
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FL06500A FL06500A.PDF
FL06500A
Hersteller: fastSiC
Description: SICFET N-CH 650V 6.1A TO-252
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 1A, 15V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 3mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): 15V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10.3 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 223 pF @ 400 V
Packaging: Tape & Reel (TR)
auf Bestellung 169 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.44 EUR
17+1.26 EUR
100+1.18 EUR
Mindestbestellmenge: 7 Stücke
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