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| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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FF07020M2F | fastSiC |
 Description: SICFET N-CH 750V 109A TOLL |
auf Bestellung 500 Stücke: Lieferzeit 10-14 Tag (e) |
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FF07020M2J-7 | fastSiC |
Description: SICFET N-CH 750V 109A TO-263-7L |
auf Bestellung 200 Stücke: Lieferzeit 10-14 Tag (e) |
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FF07020M2L | fastSiC |
Description: SICFET N-CH 750V 109A HDSOP-22 ( |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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FF07020M2Q | fastSiC |
Description: SICFET N-CH 750V 99A TO-247-4L |
auf Bestellung 200 Stücke: Lieferzeit 10-14 Tag (e) |
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FF07020M2T | fastSiC |
Description: SICFET N-CH 750V 101A T2PAK |
auf Bestellung 900 Stücke: Lieferzeit 10-14 Tag (e) |
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FF07025FA | fastSiC |
Description: SICFET N-CH 750V 81A TOLL Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 81A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 30A, 18V Power Dissipation (Max): 333W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 60mA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +18V, -8V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 174 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 4604 pF @ 500 V |
auf Bestellung 200 Stücke: Lieferzeit 10-14 Tag (e) |
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FF07025J-7A | fastSiC |
Description: SICFET N-CH 750V 81A TO-263-7L Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 81A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 30A, 18V Power Dissipation (Max): 333W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 60mA Supplier Device Package: TO-263-7L Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +18V, -8V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 174 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 4604 pF @ 500 V |
auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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FF07025QA | fastSiC |
Description: SICFET N-CH 750V 89A TO-247-4L Packaging: Tube Package / Case: TO-247-4 Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 89A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 30A, 18V Power Dissipation (Max): 405W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 60mA Supplier Device Package: TO-247-4L Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +18V, -8V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 174 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 4604 pF @ 500 V |
auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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FF07035E-3A | fastSiC |
Description: SICFET N-CH 750V 62A TO-247-3L Packaging: Tube Package / Case: TO-247-3 Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Rds On (Max) @ Id, Vgs: 48mOhm @ 22A, 18V Power Dissipation (Max): 277W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 40mA Supplier Device Package: TO-247-3L Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +18V, -8V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 2818 pF @ 500 V |
auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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FF07035FA | fastSiC |
Description: SICFET N-CH 750V 61A TOLL Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Rds On (Max) @ Id, Vgs: 48mOhm @ 22A, 18V Power Dissipation (Max): 267W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 40mA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +18V, -8V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 2818 pF @ 500 V |
auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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FF07035J-7A | fastSiC |
Description: SICFET N-CH 750V 61A TO-263-7L Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Rds On (Max) @ Id, Vgs: 48mOhm @ 22A, 18V Power Dissipation (Max): 267W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 40mA Supplier Device Package: TO-263-7L Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +18V, -8V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 2818 pF @ 500 V |
auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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FF07035QA | fastSiC |
Description: SICFET N-CH 750V 62A TO-247-4L Packaging: Tube Package / Case: TO-247-4 Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Rds On (Max) @ Id, Vgs: 48mOhm @ 22A, 18V Power Dissipation (Max): 277W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 40mA Supplier Device Package: TO-247-4L Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +18V, -8V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 2818 pF @ 500 V |
auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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FF07075E-3A | fastSiC |
Description: SICFET N-CH 750V 34A TO-247-3L Packaging: Tube Package / Case: TO-247-3 Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 10A, 18V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 20mA Supplier Device Package: TO-247-3L Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +18V, -8V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1564 pF @ 500 V |
auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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FF07075FA | fastSiC |
Description: SICFET N-CH 750V 36A TOLL Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 10A, 18V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 20mA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +18V, -8V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1564 pF @ 500 V |
auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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FF07075J-7A | fastSiC |
Description: SICFET N-CH 750V 36A TO-263-7L Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 10A, 18V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 20mA Supplier Device Package: TO-263-7L Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +18V, -8V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1564 pF @ 500 V |
auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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FF07075QA | fastSiC |
Description: SICFET N-CH 750V 34A TO-247-4L Packaging: Tube Package / Case: TO-247-4 Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 10A, 18V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 20mA Supplier Device Package: TO-247-4L Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +18V, -8V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1564 pF @ 500 V |
auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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FF07150M2A | fastSiC |
Description: SICFET N-CH 750V 20A TO-252 |
auf Bestellung 200 Stücke: Lieferzeit 10-14 Tag (e) |
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FF07150M2D | fastSiC |
Description: SICFET N-CH 750V 14A TO-220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 194mOhm @ 5A, 15V Power Dissipation (Max): 51W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 6mA Supplier Device Package: TO-220-3 Full Pack Drive Voltage (Max Rds On, Min Rds On): 12V, 15V Vgs (Max): +15V, -8V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 500 V Input Capacitance (Ciss) (Max) @ Vds: 687 pF @ 500 V Qualification: AEC-Q101 |
auf Bestellung 200 Stücke: Lieferzeit 10-14 Tag (e) |
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FF07150M2G | fastSiC |
Description: SICFET N-CH 750V 20A PDFN8x8 |
auf Bestellung 1200 Stücke: Lieferzeit 10-14 Tag (e) |
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FF07150M2J | fastSiC |
Description: SICFET N-CH 750V 23.5A TO-263 |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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FF12013M2Q | fastSiC |
Description: SICFET N-CH 1200V 127A TO-247-4L |
auf Bestellung 170 Stücke: Lieferzeit 10-14 Tag (e) |
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FF12030M2Q | fastSiC |
Description: SICFET N-CH 1200V 68A TO-247-4L |
auf Bestellung 500 Stücke: Lieferzeit 10-14 Tag (e) |
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FF12030M2T | fastSiC |
Description: SICFET N-CH 1200V 77A T2PAK |
auf Bestellung 600 Stücke: Lieferzeit 10-14 Tag (e) |
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FF12040J-7 | fastSiC |
Description: SICFET N-CH 1200V 45A TO-263-7L Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 56mOhm @ 20A, 18V Power Dissipation (Max): 187W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 40mA (Typ) Supplier Device Package: TO-263-7L Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +18V, -8V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 800 V Input Capacitance (Ciss) (Max) @ Vds: 3129 pF @ 800 V |
auf Bestellung 200 Stücke: Lieferzeit 10-14 Tag (e) |
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FF12040QA | fastSiC |
Description: SICFET N-CH 1200V 54A TO-247-4L Packaging: Tube Package / Case: TO-247-4 Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Rds On (Max) @ Id, Vgs: 56mOhm @ 20A, 18V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 40mA Supplier Device Package: TO-247-4L Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +18V, -8V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 3129 pF @ 800 V |
auf Bestellung 276 Stücke: Lieferzeit 10-14 Tag (e) |
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FF12080E-3A | fastSiC |
Description: SICFET N-CH 1200V 29A TO-247-3L Packaging: Tube Package / Case: TO-247-3 Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 112mOhm @ 8A, 18V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 20mA Supplier Device Package: TO-247-3L Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +18V, -8V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1548 pF @ 800 V |
auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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FF12080J-7A | fastSiC |
Description: SICFET N-CH 1200V 31A TO-263-7L Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Rds On (Max) @ Id, Vgs: 112mOhm @ 8A, 18V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 20mA Supplier Device Package: D2PAK-7L Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): 18V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1548 pF @ 800 V |
auf Bestellung 280 Stücke: Lieferzeit 10-14 Tag (e) |
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FF12080QA | fastSiC |
Description: SICFET N-CH 1200V 29A TO-247-4L Packaging: Tube Package / Case: TO-247-4 Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 112mOhm @ 8A, 18V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 20mA Supplier Device Package: TO-247-4L Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +18V, -8V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1548 pF @ 800 V |
auf Bestellung 700 Stücke: Lieferzeit 10-14 Tag (e) |
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FF12190M2A | fastSiC |
Description: SICFET N-CH 1200V 14A TO-252 |
auf Bestellung 294 Stücke: Lieferzeit 10-14 Tag (e) |
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FF12190M2C | fastSiC |
Description: SICFET N-CH 1200V 16.5A TO-220 |
auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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FF12190M2D | fastSiC |
Description: SICFET N-CH 1200V 10.8A TO-220FP |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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FF12190M2J-7 | fastSiC |
Description: SICFET N-CH 1200V 13A TO-263-7L |
auf Bestellung 200 Stücke: Lieferzeit 10-14 Tag (e) |
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FF17045M2Q | fastSiC |
Description: SICFET N-CH 1700V 53A TO-247-4L |
auf Bestellung 180 Stücke: Lieferzeit 10-14 Tag (e) |
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FF17900J-7 | fastSiC |
Description: SICFET N-CH 1700V 4.5A TO-263-7L Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 500mA, 18V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: D2PAK-7L Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): 18V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 266 pF @ 1.2 kV |
auf Bestellung 580 Stücke: Lieferzeit 10-14 Tag (e) |
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FF17900M2E-3 | fastSiC |
Description: SICFET N-CH 1700V 4.9A TO-247-3L |
auf Bestellung 289 Stücke: Lieferzeit 10-14 Tag (e) |
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FF17900M2J-7 | fastSiC |
Description: SICFET N-CH 1700V 4.2A TO-263-7L |
auf Bestellung 998 Stücke: Lieferzeit 10-14 Tag (e) |
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FH06004A | fastSiC |
Description: DIODE SIL CARB 650V 4A TO-252 Packaging: Tape & Reel (TR) Package / Case: TO-252-2 Mounting Type: Surface Mount Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 16pF @ 400V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: TO-252 (DPAK) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 4 A Current - Reverse Leakage @ Vr: 0.6 µA @ 520 V Qualification: AEC-Q101 |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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FH06004C | fastSiC |
Description: DIODE SIL CARB 650V 4A TO-220 Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 16pF @ 400V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: TO-220 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 4 A Current - Reverse Leakage @ Vr: 0.6 µA @ 520 V Qualification: AEC-Q101 |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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FH06004D | fastSiC |
Description: DIODE SIL CARB 650V 4A TO-220FP Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 16pF @ 400V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: TO-220 Full Pack Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 4 A Current - Reverse Leakage @ Vr: 0.6 µA @ 520 V Qualification: AEC-Q101 |
auf Bestellung 785 Stücke: Lieferzeit 10-14 Tag (e) |
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FH06004Y | fastSiC |
Description: DIODE SIL CARB 650V 4A DO221AC Packaging: Tape & Reel (TR) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 16pF @ 400V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: DO-221AC (SlimSMA) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 4 A Current - Reverse Leakage @ Vr: 35 µA @ 520 V |
auf Bestellung 4782 Stücke: Lieferzeit 10-14 Tag (e) |
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FH06004Z | fastSiC |
Description: DIODE SIL CARB 650V 4A SOD123 Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 16pF @ 400V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 4 A Current - Reverse Leakage @ Vr: 0.6 µA @ 520 V |
auf Bestellung 1129 Stücke: Lieferzeit 10-14 Tag (e) |
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FH06006C | fastSiC |
Description: DIODE SIL CARB 650V 6A TO-220 Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 24pF @ 400V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: TO-220 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 6 A Current - Reverse Leakage @ Vr: 2 µA @ 520 V Qualification: AEC-Q101 |
auf Bestellung 4555 Stücke: Lieferzeit 10-14 Tag (e) |
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FH06006D | fastSiC |
Description: DIODE SIL CARB 650V 6A TO-220FP Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 24pF @ 400V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: TO-220 Full Pack Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 6 A Current - Reverse Leakage @ Vr: 2 µA @ 520 V Qualification: AEC-Q101 |
auf Bestellung 4652 Stücke: Lieferzeit 10-14 Tag (e) |
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FH06010C | fastSiC |
Description: DIODE SIL CARB 650V 10A TO-220 Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 33pF @ 400V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-220 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A Current - Reverse Leakage @ Vr: 2 µA @ 520 V Qualification: AEC-Q101 |
auf Bestellung 446 Stücke: Lieferzeit 10-14 Tag (e) |
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FH06010D | fastSiC |
Description: DIODE SIL CARB 650V 10A TO-220FP Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 33pF @ 400V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-220 Full Pack Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A Current - Reverse Leakage @ Vr: 2 µA @ 520 V Qualification: AEC-Q101 |
auf Bestellung 2312 Stücke: Lieferzeit 10-14 Tag (e) |
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FH06020E-2 | fastSiC |
Description: DIODE SIL CARB 650V 20A TO-247-2 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 66pF @ 400V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A Current - Reverse Leakage @ Vr: 4 µA @ 520 V Qualification: AEC-Q101 |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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FL06100G | fastSiC |
Description: SICFET N-CH 650V 22A PDFN8x8 |
auf Bestellung 200 Stücke: Lieferzeit 10-14 Tag (e) |
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FL06150A | fastSiC |
Description: SICFET N-CH 650V 15A TO-252 |
auf Bestellung 1950 Stücke: Lieferzeit 10-14 Tag (e) |
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FL06150G | fastSiC |
Description: SICFET N-CH 650V 15A PDFN8x8 |
auf Bestellung 290 Stücke: Lieferzeit 10-14 Tag (e) |
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FL06250A | fastSiC |
Description: SICFET N-CH 650V 10.7A TO-252 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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FL06250G | fastSiC |
Description: SICFET N-CH 650V 10.7A PDFN8x8 Packaging: Tape & Reel (TR) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.7A (Tc) Rds On (Max) @ Id, Vgs: 330mOhm @ 3A, 15V Power Dissipation (Max): 46.8W (Tc) Vgs(th) (Max) @ Id: 2V @ 6mA Supplier Device Package: 4-PDFN (8x8) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): 15V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 436 pF @ 400 V |
auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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FL06320A | fastSiC |
Description: SICFET N-CH 650V 8.8A TO-252 |
auf Bestellung 400 Stücke: Lieferzeit 10-14 Tag (e) |
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FL06320B | fastSiC |
Description: SICFET N-CH 650V 8.8A PQFN5x6 |
auf Bestellung 487 Stücke: Lieferzeit 10-14 Tag (e) |
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FL06320G | fastSiC |
Description: SICFET N-CH 650V 8.8A PDFN8x8 Packaging: Tape & Reel (TR) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc) Rds On (Max) @ Id, Vgs: 320mOhm @ 2A, 15V Power Dissipation (Max): 41W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 4mA Supplier Device Package: 4-PDFN (8x8) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): 15V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 400 V |
auf Bestellung 290 Stücke: Lieferzeit 10-14 Tag (e) |
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FL06500A | fastSiC |
Description: SICFET N-CH 650V 6.1A TO-252 |
auf Bestellung 169 Stücke: Lieferzeit 10-14 Tag (e) |
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| FF07020M2F |
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Hersteller: fastSiC
Description: SICFET N-CH 750V 109A TOLL
Description: SICFET N-CH 750V 109A TOLL
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 32.19 EUR |
| 10+ | 26.83 EUR |
| 100+ | 21.47 EUR |
| FF07020M2J-7 |
|
Hersteller: fastSiC
Description: SICFET N-CH 750V 109A TO-263-7L
Description: SICFET N-CH 750V 109A TO-263-7L
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 34.53 EUR |
| 10+ | 28.77 EUR |
| 100+ | 23.03 EUR |
| FF07020M2L |
|
Hersteller: fastSiC
Description: SICFET N-CH 750V 109A HDSOP-22 (
Description: SICFET N-CH 750V 109A HDSOP-22 (
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 36.24 EUR |
| 10+ | 30.2 EUR |
| 100+ | 24.16 EUR |
| 600+ | 12.08 EUR |
| FF07020M2Q |
|
Hersteller: fastSiC
Description: SICFET N-CH 750V 99A TO-247-4L
Description: SICFET N-CH 750V 99A TO-247-4L
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 35.5 EUR |
| 10+ | 29.6 EUR |
| 100+ | 23.67 EUR |
| FF07020M2T |
|
Hersteller: fastSiC
Description: SICFET N-CH 750V 101A T2PAK
Description: SICFET N-CH 750V 101A T2PAK
auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 35.5 EUR |
| 10+ | 29.6 EUR |
| 100+ | 23.67 EUR |
| 600+ | 11.84 EUR |
| FF07025FA |
|
Hersteller: fastSiC
Description: SICFET N-CH 750V 81A TOLL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 81A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 30A, 18V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 60mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 174 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 4604 pF @ 500 V
Description: SICFET N-CH 750V 81A TOLL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 81A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 30A, 18V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 60mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 174 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 4604 pF @ 500 V
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 65.03 EUR |
| 10+ | 23.85 EUR |
| 100+ | 22.22 EUR |
| FF07025J-7A |
|
Hersteller: fastSiC
Description: SICFET N-CH 750V 81A TO-263-7L
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 81A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 30A, 18V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 60mA
Supplier Device Package: TO-263-7L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 174 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 4604 pF @ 500 V
Description: SICFET N-CH 750V 81A TO-263-7L
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 81A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 30A, 18V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 60mA
Supplier Device Package: TO-263-7L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 174 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 4604 pF @ 500 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 64.24 EUR |
| 10+ | 23.55 EUR |
| 100+ | 21.94 EUR |
| FF07025QA |
|
Hersteller: fastSiC
Description: SICFET N-CH 750V 89A TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 30A, 18V
Power Dissipation (Max): 405W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 60mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 174 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 4604 pF @ 500 V
Description: SICFET N-CH 750V 89A TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 30A, 18V
Power Dissipation (Max): 405W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 60mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 174 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 4604 pF @ 500 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 64.97 EUR |
| 10+ | 23.81 EUR |
| 100+ | 22.19 EUR |
| FF07035E-3A |
|
Hersteller: fastSiC
Description: SICFET N-CH 750V 62A TO-247-3L
Packaging: Tube
Package / Case: TO-247-3
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 22A, 18V
Power Dissipation (Max): 277W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 40mA
Supplier Device Package: TO-247-3L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2818 pF @ 500 V
Description: SICFET N-CH 750V 62A TO-247-3L
Packaging: Tube
Package / Case: TO-247-3
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 22A, 18V
Power Dissipation (Max): 277W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 40mA
Supplier Device Package: TO-247-3L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2818 pF @ 500 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 38.96 EUR |
| 10+ | 14.29 EUR |
| 100+ | 13.32 EUR |
| FF07035FA |
|
Hersteller: fastSiC
Description: SICFET N-CH 750V 61A TOLL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 22A, 18V
Power Dissipation (Max): 267W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 40mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2818 pF @ 500 V
Description: SICFET N-CH 750V 61A TOLL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 22A, 18V
Power Dissipation (Max): 267W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 40mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2818 pF @ 500 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 38.25 EUR |
| 10+ | 14.02 EUR |
| 100+ | 13.07 EUR |
| FF07035J-7A |
|
Hersteller: fastSiC
Description: SICFET N-CH 750V 61A TO-263-7L
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 22A, 18V
Power Dissipation (Max): 267W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 40mA
Supplier Device Package: TO-263-7L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2818 pF @ 500 V
Description: SICFET N-CH 750V 61A TO-263-7L
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 22A, 18V
Power Dissipation (Max): 267W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 40mA
Supplier Device Package: TO-263-7L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2818 pF @ 500 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 38.25 EUR |
| 10+ | 14.02 EUR |
| 100+ | 13.07 EUR |
| FF07035QA |
|
Hersteller: fastSiC
Description: SICFET N-CH 750V 62A TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 22A, 18V
Power Dissipation (Max): 277W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 40mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2818 pF @ 500 V
Description: SICFET N-CH 750V 62A TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 22A, 18V
Power Dissipation (Max): 277W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 40mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2818 pF @ 500 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 38.96 EUR |
| 10+ | 14.29 EUR |
| 100+ | 13.32 EUR |
| FF07075E-3A |
|
Hersteller: fastSiC
Description: SICFET N-CH 750V 34A TO-247-3L
Packaging: Tube
Package / Case: TO-247-3
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 10A, 18V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 20mA
Supplier Device Package: TO-247-3L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1564 pF @ 500 V
Description: SICFET N-CH 750V 34A TO-247-3L
Packaging: Tube
Package / Case: TO-247-3
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 10A, 18V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 20mA
Supplier Device Package: TO-247-3L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1564 pF @ 500 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 22.74 EUR |
| 10+ | 8.34 EUR |
| 100+ | 7.77 EUR |
| FF07075FA |
|
Hersteller: fastSiC
Description: SICFET N-CH 750V 36A TOLL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 10A, 18V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 20mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1564 pF @ 500 V
Description: SICFET N-CH 750V 36A TOLL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 10A, 18V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 20mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1564 pF @ 500 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 22.02 EUR |
| 10+ | 8.07 EUR |
| 100+ | 7.52 EUR |
| FF07075J-7A |
|
Hersteller: fastSiC
Description: SICFET N-CH 750V 36A TO-263-7L
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 10A, 18V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 20mA
Supplier Device Package: TO-263-7L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1564 pF @ 500 V
Description: SICFET N-CH 750V 36A TO-263-7L
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 10A, 18V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 20mA
Supplier Device Package: TO-263-7L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1564 pF @ 500 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 22.02 EUR |
| 10+ | 8.07 EUR |
| 100+ | 7.52 EUR |
| FF07075QA |
|
Hersteller: fastSiC
Description: SICFET N-CH 750V 34A TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 10A, 18V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 20mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1564 pF @ 500 V
Description: SICFET N-CH 750V 34A TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 10A, 18V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 20mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1564 pF @ 500 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 22.74 EUR |
| 10+ | 8.34 EUR |
| 100+ | 7.77 EUR |
| FF07150M2A |
|
Hersteller: fastSiC
Description: SICFET N-CH 750V 20A TO-252
Description: SICFET N-CH 750V 20A TO-252
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.89 EUR |
| 10+ | 4.9 EUR |
| 100+ | 3.93 EUR |
| FF07150M2D |
|
Hersteller: fastSiC
Description: SICFET N-CH 750V 14A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 194mOhm @ 5A, 15V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 6mA
Supplier Device Package: TO-220-3 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 12V, 15V
Vgs (Max): +15V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 500 V
Input Capacitance (Ciss) (Max) @ Vds: 687 pF @ 500 V
Qualification: AEC-Q101
Description: SICFET N-CH 750V 14A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 194mOhm @ 5A, 15V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 6mA
Supplier Device Package: TO-220-3 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 12V, 15V
Vgs (Max): +15V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 500 V
Input Capacitance (Ciss) (Max) @ Vds: 687 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.94 EUR |
| 10+ | 5.78 EUR |
| 100+ | 4.63 EUR |
| FF07150M2G |
|
Hersteller: fastSiC
Description: SICFET N-CH 750V 20A PDFN8x8
Description: SICFET N-CH 750V 20A PDFN8x8
auf Bestellung 1200 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.82 EUR |
| 10+ | 7.34 EUR |
| 100+ | 5.87 EUR |
| FF07150M2J |
|
Hersteller: fastSiC
Description: SICFET N-CH 750V 23.5A TO-263
Description: SICFET N-CH 750V 23.5A TO-263
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.1 EUR |
| 10+ | 5.91 EUR |
| 100+ | 4.74 EUR |
| 800+ | 2.37 EUR |
| FF12013M2Q |
|
Hersteller: fastSiC
Description: SICFET N-CH 1200V 127A TO-247-4L
Description: SICFET N-CH 1200V 127A TO-247-4L
auf Bestellung 170 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 90.48 EUR |
| 10+ | 75.39 EUR |
| 100+ | 60.31 EUR |
| FF12030M2Q |
|
Hersteller: fastSiC
Description: SICFET N-CH 1200V 68A TO-247-4L
Description: SICFET N-CH 1200V 68A TO-247-4L
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 35.5 EUR |
| 10+ | 29.6 EUR |
| 100+ | 23.67 EUR |
| FF12030M2T |
|
Hersteller: fastSiC
Description: SICFET N-CH 1200V 77A T2PAK
Description: SICFET N-CH 1200V 77A T2PAK
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 35.5 EUR |
| 10+ | 29.6 EUR |
| 100+ | 23.67 EUR |
| 600+ | 11.84 EUR |
| FF12040J-7 |
|
Hersteller: fastSiC
Description: SICFET N-CH 1200V 45A TO-263-7L
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 20A, 18V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 40mA (Typ)
Supplier Device Package: TO-263-7L
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 800 V
Input Capacitance (Ciss) (Max) @ Vds: 3129 pF @ 800 V
Description: SICFET N-CH 1200V 45A TO-263-7L
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 20A, 18V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 40mA (Typ)
Supplier Device Package: TO-263-7L
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 800 V
Input Capacitance (Ciss) (Max) @ Vds: 3129 pF @ 800 V
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 40.9 EUR |
| 10+ | 14.98 EUR |
| 100+ | 13.97 EUR |
| FF12040QA |
|
Hersteller: fastSiC
Description: SICFET N-CH 1200V 54A TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 20A, 18V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 40mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3129 pF @ 800 V
Description: SICFET N-CH 1200V 54A TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 20A, 18V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 40mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3129 pF @ 800 V
auf Bestellung 276 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 41.64 EUR |
| 10+ | 15.27 EUR |
| 100+ | 14.22 EUR |
| FF12080E-3A |
|
Hersteller: fastSiC
Description: SICFET N-CH 1200V 29A TO-247-3L
Packaging: Tube
Package / Case: TO-247-3
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 112mOhm @ 8A, 18V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 20mA
Supplier Device Package: TO-247-3L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1548 pF @ 800 V
Description: SICFET N-CH 1200V 29A TO-247-3L
Packaging: Tube
Package / Case: TO-247-3
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 112mOhm @ 8A, 18V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 20mA
Supplier Device Package: TO-247-3L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1548 pF @ 800 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 23.95 EUR |
| 10+ | 8.78 EUR |
| 100+ | 8.19 EUR |
| FF12080J-7A |
|
Hersteller: fastSiC
Description: SICFET N-CH 1200V 31A TO-263-7L
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 112mOhm @ 8A, 18V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 20mA
Supplier Device Package: D2PAK-7L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): 18V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1548 pF @ 800 V
Description: SICFET N-CH 1200V 31A TO-263-7L
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 112mOhm @ 8A, 18V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 20mA
Supplier Device Package: D2PAK-7L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): 18V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1548 pF @ 800 V
auf Bestellung 280 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 23.23 EUR |
| 10+ | 8.51 EUR |
| 100+ | 7.94 EUR |
| FF12080QA |
|
Hersteller: fastSiC
Description: SICFET N-CH 1200V 29A TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 112mOhm @ 8A, 18V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 20mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1548 pF @ 800 V
Description: SICFET N-CH 1200V 29A TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 112mOhm @ 8A, 18V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 20mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1548 pF @ 800 V
auf Bestellung 700 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 23.95 EUR |
| 10+ | 8.78 EUR |
| 100+ | 8.19 EUR |
| 600+ | 7.98 EUR |
| FF12190M2A |
|
Hersteller: fastSiC
Description: SICFET N-CH 1200V 14A TO-252
Description: SICFET N-CH 1200V 14A TO-252
auf Bestellung 294 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.89 EUR |
| 10+ | 4.9 EUR |
| 100+ | 3.93 EUR |
| FF12190M2C |
|
Hersteller: fastSiC
Description: SICFET N-CH 1200V 16.5A TO-220
Description: SICFET N-CH 1200V 16.5A TO-220
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.22 EUR |
| 10+ | 6.01 EUR |
| 100+ | 4.81 EUR |
| FF12190M2D |
|
Hersteller: fastSiC
Description: SICFET N-CH 1200V 10.8A TO-220FP
Description: SICFET N-CH 1200V 10.8A TO-220FP
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.94 EUR |
| 10+ | 5.78 EUR |
| 100+ | 4.63 EUR |
| FF12190M2J-7 |
|
Hersteller: fastSiC
Description: SICFET N-CH 1200V 13A TO-263-7L
Description: SICFET N-CH 1200V 13A TO-263-7L
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 34.53 EUR |
| 10+ | 28.77 EUR |
| 100+ | 23.03 EUR |
| FF17045M2Q |
|
Hersteller: fastSiC
Description: SICFET N-CH 1700V 53A TO-247-4L
Description: SICFET N-CH 1700V 53A TO-247-4L
auf Bestellung 180 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 35.5 EUR |
| 10+ | 29.6 EUR |
| 100+ | 23.67 EUR |
| FF17900J-7 |
|
Hersteller: fastSiC
Description: SICFET N-CH 1700V 4.5A TO-263-7L
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 500mA, 18V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: D2PAK-7L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): 18V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 266 pF @ 1.2 kV
Description: SICFET N-CH 1700V 4.5A TO-263-7L
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 500mA, 18V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: D2PAK-7L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): 18V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 266 pF @ 1.2 kV
auf Bestellung 580 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.52 EUR |
| 10+ | 3.13 EUR |
| 100+ | 2.92 EUR |
| FF17900M2E-3 |
|
Hersteller: fastSiC
Description: SICFET N-CH 1700V 4.9A TO-247-3L
Description: SICFET N-CH 1700V 4.9A TO-247-3L
auf Bestellung 289 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.79 EUR |
| 10+ | 6.5 EUR |
| 100+ | 5.19 EUR |
| FF17900M2J-7 |
|
Hersteller: fastSiC
Description: SICFET N-CH 1700V 4.2A TO-263-7L
Description: SICFET N-CH 1700V 4.2A TO-263-7L
auf Bestellung 998 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.81 EUR |
| 10+ | 5.68 EUR |
| 100+ | 4.55 EUR |
| 800+ | 2.27 EUR |
| FH06004A |
|
Hersteller: fastSiC
Description: DIODE SIL CARB 650V 4A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-2
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 16pF @ 400V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-252 (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 4 A
Current - Reverse Leakage @ Vr: 0.6 µA @ 520 V
Qualification: AEC-Q101
Description: DIODE SIL CARB 650V 4A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-2
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 16pF @ 400V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-252 (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 4 A
Current - Reverse Leakage @ Vr: 0.6 µA @ 520 V
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 1.8 EUR |
| 14+ | 1.5 EUR |
| 100+ | 0.68 EUR |
| FH06004C |
|
Hersteller: fastSiC
Description: DIODE SIL CARB 650V 4A TO-220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 16pF @ 400V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 4 A
Current - Reverse Leakage @ Vr: 0.6 µA @ 520 V
Qualification: AEC-Q101
Description: DIODE SIL CARB 650V 4A TO-220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 16pF @ 400V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 4 A
Current - Reverse Leakage @ Vr: 0.6 µA @ 520 V
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.75 EUR |
| 10+ | 2.27 EUR |
| 100+ | 1.02 EUR |
| FH06004D |
|
Hersteller: fastSiC
Description: DIODE SIL CARB 650V 4A TO-220FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 16pF @ 400V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-220 Full Pack
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 4 A
Current - Reverse Leakage @ Vr: 0.6 µA @ 520 V
Qualification: AEC-Q101
Description: DIODE SIL CARB 650V 4A TO-220FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 16pF @ 400V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-220 Full Pack
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 4 A
Current - Reverse Leakage @ Vr: 0.6 µA @ 520 V
Qualification: AEC-Q101
auf Bestellung 785 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.75 EUR |
| 10+ | 2.27 EUR |
| 100+ | 1.02 EUR |
| FH06004Y |
|
Hersteller: fastSiC
Description: DIODE SIL CARB 650V 4A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 16pF @ 400V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 4 A
Current - Reverse Leakage @ Vr: 35 µA @ 520 V
Description: DIODE SIL CARB 650V 4A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 16pF @ 400V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 4 A
Current - Reverse Leakage @ Vr: 35 µA @ 520 V
auf Bestellung 4782 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.4 EUR |
| 13+ | 1.62 EUR |
| 100+ | 1.5 EUR |
| FH06004Z |
|
Hersteller: fastSiC
Description: DIODE SIL CARB 650V 4A SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 16pF @ 400V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 4 A
Current - Reverse Leakage @ Vr: 0.6 µA @ 520 V
Description: DIODE SIL CARB 650V 4A SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 16pF @ 400V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 4 A
Current - Reverse Leakage @ Vr: 0.6 µA @ 520 V
auf Bestellung 1129 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.96 EUR |
| 15+ | 1.45 EUR |
| 100+ | 1.36 EUR |
| FH06006C |
|
Hersteller: fastSiC
Description: DIODE SIL CARB 650V 6A TO-220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 24pF @ 400V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 520 V
Qualification: AEC-Q101
Description: DIODE SIL CARB 650V 6A TO-220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 24pF @ 400V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 520 V
Qualification: AEC-Q101
auf Bestellung 4555 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.98 EUR |
| 10+ | 2.49 EUR |
| 100+ | 1.12 EUR |
| 2000+ | 1 EUR |
| FH06006D |
|
Hersteller: fastSiC
Description: DIODE SIL CARB 650V 6A TO-220FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 24pF @ 400V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220 Full Pack
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 520 V
Qualification: AEC-Q101
Description: DIODE SIL CARB 650V 6A TO-220FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 24pF @ 400V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220 Full Pack
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 520 V
Qualification: AEC-Q101
auf Bestellung 4652 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.99 EUR |
| 10+ | 2.49 EUR |
| 100+ | 1.12 EUR |
| 2000+ | 1 EUR |
| FH06010C |
|
Hersteller: fastSiC
Description: DIODE SIL CARB 650V 10A TO-220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 33pF @ 400V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Current - Reverse Leakage @ Vr: 2 µA @ 520 V
Qualification: AEC-Q101
Description: DIODE SIL CARB 650V 10A TO-220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 33pF @ 400V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Current - Reverse Leakage @ Vr: 2 µA @ 520 V
Qualification: AEC-Q101
auf Bestellung 446 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.98 EUR |
| 10+ | 2.49 EUR |
| 100+ | 1.12 EUR |
| FH06010D |
|
Hersteller: fastSiC
Description: DIODE SIL CARB 650V 10A TO-220FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 33pF @ 400V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220 Full Pack
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Current - Reverse Leakage @ Vr: 2 µA @ 520 V
Qualification: AEC-Q101
Description: DIODE SIL CARB 650V 10A TO-220FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 33pF @ 400V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220 Full Pack
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Current - Reverse Leakage @ Vr: 2 µA @ 520 V
Qualification: AEC-Q101
auf Bestellung 2312 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.98 EUR |
| 10+ | 2.49 EUR |
| 100+ | 1.12 EUR |
| 2000+ | 1 EUR |
| FH06020E-2 |
|
Hersteller: fastSiC
Description: DIODE SIL CARB 650V 20A TO-247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 66pF @ 400V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 4 µA @ 520 V
Qualification: AEC-Q101
Description: DIODE SIL CARB 650V 20A TO-247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 66pF @ 400V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 4 µA @ 520 V
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.47 EUR |
| 10+ | 7.89 EUR |
| 100+ | 3.55 EUR |
| 600+ | 3.15 EUR |
| FL06100G |
|
Hersteller: fastSiC
Description: SICFET N-CH 650V 22A PDFN8x8
Description: SICFET N-CH 650V 22A PDFN8x8
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 14.96 EUR |
| 10+ | 5.49 EUR |
| 100+ | 5.11 EUR |
| FL06150A |
|
Hersteller: fastSiC
Description: SICFET N-CH 650V 15A TO-252
Description: SICFET N-CH 650V 15A TO-252
auf Bestellung 1950 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.65 EUR |
| 10+ | 3.17 EUR |
| 100+ | 2.95 EUR |
| FL06150G |
|
Hersteller: fastSiC
Description: SICFET N-CH 650V 15A PDFN8x8
Description: SICFET N-CH 650V 15A PDFN8x8
auf Bestellung 290 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 10.08 EUR |
| 10+ | 3.69 EUR |
| 100+ | 3.44 EUR |
| FL06250A |
|
Hersteller: fastSiC
Description: SICFET N-CH 650V 10.7A TO-252
Description: SICFET N-CH 650V 10.7A TO-252
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.55 EUR |
| 11+ | 2.03 EUR |
| 100+ | 1.89 EUR |
| FL06250G |
|
Hersteller: fastSiC
Description: SICFET N-CH 650V 10.7A PDFN8x8
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.7A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 3A, 15V
Power Dissipation (Max): 46.8W (Tc)
Vgs(th) (Max) @ Id: 2V @ 6mA
Supplier Device Package: 4-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): 15V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 436 pF @ 400 V
Description: SICFET N-CH 650V 10.7A PDFN8x8
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.7A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 3A, 15V
Power Dissipation (Max): 46.8W (Tc)
Vgs(th) (Max) @ Id: 2V @ 6mA
Supplier Device Package: 4-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): 15V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 436 pF @ 400 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.83 EUR |
| 10+ | 2.5 EUR |
| 100+ | 2.33 EUR |
| FL06320A |
|
Hersteller: fastSiC
Description: SICFET N-CH 650V 8.8A TO-252
Description: SICFET N-CH 650V 8.8A TO-252
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.65 EUR |
| 13+ | 1.7 EUR |
| 100+ | 1.59 EUR |
| FL06320B |
|
Hersteller: fastSiC
Description: SICFET N-CH 650V 8.8A PQFN5x6
Description: SICFET N-CH 650V 8.8A PQFN5x6
auf Bestellung 487 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.65 EUR |
| 13+ | 1.7 EUR |
| 100+ | 1.59 EUR |
| FL06320G |
|
Hersteller: fastSiC
Description: SICFET N-CH 650V 8.8A PDFN8x8
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 2A, 15V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 4mA
Supplier Device Package: 4-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): 15V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 400 V
Description: SICFET N-CH 650V 8.8A PDFN8x8
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 2A, 15V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 4mA
Supplier Device Package: 4-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): 15V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 400 V
auf Bestellung 290 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.07 EUR |
| 10+ | 2.23 EUR |
| 100+ | 2.08 EUR |
| FL06500A |
|
Hersteller: fastSiC
Description: SICFET N-CH 650V 6.1A TO-252
Description: SICFET N-CH 650V 6.1A TO-252
auf Bestellung 169 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.52 EUR |
| 17+ | 1.29 EUR |
| 100+ | 1.2 EUR |
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