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FC06004A FC06004A fastSiC Datasheet_FC06004A.pdf Description: DIODE SIL CARB 650V 4A TO-252
auf Bestellung 7850 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.44 EUR
18+1.21 EUR
100+0.55 EUR
3000+0.49 EUR
Mindestbestellmenge: 15 Stücke
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FC06004B FC06004B fastSiC Datasheet_FC06004B.pdf Description: DIODE SIL CARB 650V 4A PQFN5x6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 10pF @ 400V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: 8-PQFN (5x6)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 4 A
Current - Reverse Leakage @ Vr: 1 µA @ 520 V
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.44 EUR
18+1.21 EUR
100+0.55 EUR
4000+0.49 EUR
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FC06004C FC06004C fastSiC Datasheet_FC06004C.pdf Description: DIODE SIL CARB 650V 4A TO-220
auf Bestellung 5988 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.37 EUR
11+1.96 EUR
100+0.88 EUR
2000+0.79 EUR
Mindestbestellmenge: 9 Stücke
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FC06004D FC06004D fastSiC Datasheet_FC06004D.pdf Description: DIODE SIL CARB 650V 4A TO-220FP
auf Bestellung 5995 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.37 EUR
11+1.96 EUR
100+0.88 EUR
2000+0.79 EUR
Mindestbestellmenge: 9 Stücke
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FC06004Y FC06004Y fastSiC 5700_Datasheet_FC06004Y.pdf Description: DIODE SIL CARB 650V 4A DO221AC
auf Bestellung 7345 Stücke:
Lieferzeit 10-14 Tag (e)
11+2.05 EUR
28+0.75 EUR
100+0.7 EUR
Mindestbestellmenge: 11 Stücke
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FC06006A FC06006A fastSiC Datasheet_FC06006A.pdf Description: DIODE SIL CARB 650V 6A TO-252
auf Bestellung 13000 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.76 EUR
15+1.48 EUR
100+0.67 EUR
3000+0.58 EUR
Mindestbestellmenge: 12 Stücke
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FC06006B FC06006B fastSiC Datasheet_FC06006B.pdf Description: DIODE SIL CARB 650V 6A PQFN5x6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 15pF @ 400V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 8-PQFN (5x6)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 6 A
Current - Reverse Leakage @ Vr: 0.8 µA @ 520 V
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.76 EUR
15+1.48 EUR
100+0.67 EUR
4000+0.58 EUR
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FC06006C FC06006C fastSiC Datasheet_FC06006C.pdf Description: DIODE SIL CARB 650V 6A TO-220
auf Bestellung 10000 Stücke:
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8+2.68 EUR
10+2.23 EUR
100+1 EUR
2000+0.89 EUR
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FC06006D FC06006D fastSiC Datasheet_FC06006D.pdf Description: DIODE SIL CARB 650V 6A TO-220FP
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.68 EUR
10+2.23 EUR
100+1 EUR
2000+0.89 EUR
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FC06006JA FC06006JA fastSiC Datasheet_FC06006JA.pdf Description: DIODE SIL CARB 650V 6A TO-263
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.09 EUR
10+2.58 EUR
100+1.17 EUR
800+1.04 EUR
Mindestbestellmenge: 7 Stücke
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FC06008A FC06008A fastSiC Datasheet_FC06008A.pdf Description: DIODE SIL CARB 650V 8A TO-252
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.88 EUR
14+1.57 EUR
100+0.71 EUR
3000+0.63 EUR
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FC06008B FC06008B fastSiC Datasheet_FC06008B.pdf Description: DIODE SIL CARB 650V 8A PQFN5x6
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.88 EUR
14+1.57 EUR
100+0.71 EUR
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FC06008C FC06008C fastSiC Datasheet_FC06008C.pdf Description: DIODE SIL CARB 650V 8A TO-220
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.81 EUR
10+2.33 EUR
100+1.05 EUR
2000+0.93 EUR
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FC06008D FC06008D fastSiC Datasheet_FC06008D.pdf Description: DIODE SIL CARB 650V 8A TO-220FP
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.81 EUR
10+2.33 EUR
100+1.05 EUR
2000+0.93 EUR
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FC06008JA FC06008JA fastSiC Datasheet_FC06008JA.pdf Description: DIODE SIL CARB 650V 6A TO-263
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.22 EUR
10+2.69 EUR
100+1.21 EUR
800+1.07 EUR
Mindestbestellmenge: 7 Stücke
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FC06010C FC06010C fastSiC Datasheet_FC06010C.pdf Description: DIODE SIL CARB 650V 10A TO-220
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.01 EUR
10+2.52 EUR
100+1.13 EUR
2000+1.01 EUR
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FC06010D FC06010D fastSiC Datasheet_FC06010D.pdf Description: DIODE SIL CARB 650V 10A TO-220FP
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.01 EUR
10+2.52 EUR
100+1.13 EUR
2000+1.01 EUR
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FC06010JA FC06010JA fastSiC Datasheet_FC06010JA.pdf Description: DIODE SIL CARB 650V 6A TO-263
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.44 EUR
10+2.88 EUR
100+1.3 EUR
800+1.15 EUR
Mindestbestellmenge: 7 Stücke
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FC06016C FC06016C fastSiC Datasheet_FC06016C.pdf Description: DIODE SIL CARB 650V 16A TO-220
auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.01 EUR
10+2.52 EUR
100+1.13 EUR
Mindestbestellmenge: 7 Stücke
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FC06020E-2 FC06020E-2 fastSiC Datasheet_FC06020E-2.pdf Description: DIODE SIL CARB 650V 20A TO-247-2
auf Bestellung 1990 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.47 EUR
10+6.24 EUR
100+2.81 EUR
600+2.49 EUR
Mindestbestellmenge: 3 Stücke
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FC06020E-3 FC06020E-3 fastSiC Datasheet_FC06020E-3.pdf Description: DIODE SIL CARB 650V 20A TO-247-3
auf Bestellung 1992 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.47 EUR
10+6.24 EUR
100+2.81 EUR
600+2.49 EUR
Mindestbestellmenge: 3 Stücke
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FC12002A FC12002A fastSiC Datasheet_FC12002A.pdf Description: DIODE SIL CARB 1200V 2A TO252
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.64 EUR
16+1.33 EUR
Mindestbestellmenge: 6 Stücke
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FC12002Y FC12002Y fastSiC Datasheet_FC12002Y.pdf Description: DIODE SIC 1.2KV 2A DO221AC
auf Bestellung 1330 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.64 EUR
16+1.33 EUR
100+1.25 EUR
Mindestbestellmenge: 6 Stücke
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FC12010E-3 FC12010E-3 fastSiC Datasheet_FC12010E-3.pdf Description: DIODE SIL CARB 1200V 10A TO-247-
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 21pF @ 800V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 0.1 µA @ 1200 V
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.5 EUR
10+8.76 EUR
100+3.94 EUR
600+3.5 EUR
Mindestbestellmenge: 2 Stücke
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FC12020C FC12020C fastSiC 5700_Datasheet_FC12020C.pdf Description: DIODE SIL CARB 1200V 20A TO-220-
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.33 EUR
10+6.94 EUR
100+3.12 EUR
Mindestbestellmenge: 3 Stücke
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FC12020CA FC12020CA fastSiC 5700_Datasheet_FC12020CA.pdf Description: DIODE SIL CARB 1200V 20A TO-220-
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.33 EUR
10+6.94 EUR
100+3.12 EUR
Mindestbestellmenge: 3 Stücke
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FC12020E-2A FC12020E-2A fastSiC Datasheet_FC12020E-2A.pdf Description: DIODE SIL CARB 1200V 20A TO-247-
auf Bestellung 1490 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.44 EUR
10+9.53 EUR
100+4.28 EUR
600+3.81 EUR
Mindestbestellmenge: 2 Stücke
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FC12050E-2 FC12050E-2 fastSiC Datasheet_FC12050E-2.pdf Description: DIODE SIL CARB 1200V 50A TO-247-
auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)
2+19.85 EUR
10+16.55 EUR
100+7.45 EUR
600+6.63 EUR
Mindestbestellmenge: 2 Stücke
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FC17010E-2 FC17010E-2 fastSiC 5700_Datasheet_FC17010E-2.pdf Description: DIODE SIL CARB 1700V 10A TO-247-
auf Bestellung 484 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.98 EUR
10+9.98 EUR
100+4.5 EUR
Mindestbestellmenge: 2 Stücke
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FC17020E-3 FC17020E-3 fastSiC Datasheet_FC17020E-3.pdf Description: DIODE SIL CARB 1700V 20A TO-247-
auf Bestellung 688 Stücke:
Lieferzeit 10-14 Tag (e)
2+19.18 EUR
10+15.98 EUR
100+7.19 EUR
600+6.39 EUR
Mindestbestellmenge: 2 Stücke
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FF05130M2B FF05130M2B fastSiC 5700_FF05130M2B.pdf Description: SICFET N-CH 500V 26A PQFN5x6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 6A, 15V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 6mA (Typ)
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 12V, 15V
Vgs (Max): +15V, -8V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 300 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 300 V
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.07 EUR
10+5.06 EUR
100+4.05 EUR
Mindestbestellmenge: 4 Stücke
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FF05130M2G FF05130M2G fastSiC 5700_FF05130M2G.pdf Description: SICFET N-CH 500V 23A PDFN8x8
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 170mOhm @ 6A, 15V
Power Dissipation (Max): 98W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 6mA (Typ)
Supplier Device Package: 4-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 12V, 15V
Vgs (Max): +15V, -8V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 300 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 300 V
Qualification: AEC-Q101
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
auf Bestellung 1198 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.63 EUR
10+7.19 EUR
100+5.75 EUR
Mindestbestellmenge: 3 Stücke
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FF06010E-3A FF06010E-3A fastSiC Datasheet_FF06010E-3A.pdf Description: SICFET N-CH 650V 169A TO-247-3L
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 169A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 60A, 18V
Power Dissipation (Max): 555W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100mA
Supplier Device Package: TO-247-3L
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 7390 pF @ 400 V
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
1+103.89 EUR
10+38.09 EUR
100+35.5 EUR
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FF06010FA FF06010FA fastSiC 5700_Datasheet_FF06010FA.pdf Description: SICFET N-CH 650V 140A TOLL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 60A, 18V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 7390 pF @ 400 V
auf Bestellung 290 Stücke:
Lieferzeit 10-14 Tag (e)
1+103.17 EUR
10+37.83 EUR
100+35.25 EUR
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FF06010QA FF06010QA fastSiC Datasheet_FF06010QA.pdf Description: SICFET N-CH 650V 169A TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 169A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 60A, 18V
Power Dissipation (Max): 555W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 7390 pF @ 400 V
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
1+103.89 EUR
10+38.09 EUR
100+35.5 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FF06020E-3A FF06020E-3A fastSiC Datasheet_FF06020E-3A.pdf Description: SICFET N-CH 650V 110A TO-247-3L
Input Capacitance (Ciss) (Max) @ Vds: 4437 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 194 nC @ 400 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +18V, -8V
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Supplier Device Package: TO-247-3L
Vgs(th) (Max) @ Id: 2.5V @ 60mA (Typ)
Power Dissipation (Max): 405W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 35A, 18V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
1+64.97 EUR
10+23.81 EUR
100+22.19 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FF06020FA FF06020FA fastSiC 5700_Datasheet_FF06020FA.pdf Description: SICFET N-CH 650V 101A TOLL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 101A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 35A, 18V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 60mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 194 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 4437 pF @ 400 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
1+64.24 EUR
10+23.55 EUR
100+21.94 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FF06020J-7A FF06020J-7A fastSiC 5700_Datasheet_FF06020J-7A.pdf Description: SICFET N-CH 650V 101A TO-263-7L
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 101A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 35A, 18V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 60mA
Supplier Device Package: D2PAK-7L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 194 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 4437 pF @ 400 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
1+64.24 EUR
10+23.55 EUR
100+21.94 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FF06020QA FF06020QA fastSiC Datasheet_FF06020QA.pdf Description: SICFET N-CH 650V 110A TO-247-4L
Input Capacitance (Ciss) (Max) @ Vds: 4437 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 194 nC @ 15 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +18V, -8V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: TO-247-4L
Vgs(th) (Max) @ Id: 2.5V @ 60mA
Power Dissipation (Max): 405W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 35A, 18V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Package / Case: TO-247-4
Packaging: Tube
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FF06030E-3A FF06030E-3A fastSiC Datasheet_FF06030E-3A.pdf?rlkey=uufjizik52w84bk5npha5rt9h&dl=0 Description: SICFET N-CH 650V 75A TO-247-3L
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 18V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 40mA (Typ)
Supplier Device Package: TO-247-3L
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 3015 pF @ 400 V
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FF06030FA FF06030FA fastSiC 5700_Datasheet_FF06030FA.pdf Description: SICFET N-CH 650V 74A TOLL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 18V
Power Dissipation (Max): 268W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 40mA
Supplier Device Package: TOLL
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3015 pF @ 400 V
Qualification: AEC-Q101
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FF06030J-7 FF06030J-7 fastSiC FF06030J-7.PDF Description: SICFET N-CH 650V 62A TO-263-7L
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 18V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 40mA (Typ)
Supplier Device Package: TO-263-7L
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 3015 pF @ 400 V
auf Bestellung 300 Stücke:
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FF06030J-7A FF06030J-7A fastSiC 5700_Datasheet_FF06030J-7A.pdf Description: SICFET N-CH 650V 74A TO-263-7L
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 18V
Power Dissipation (Max): 268W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 40mA
Supplier Device Package: D2PAK-7L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3015 pF @ 400 V
Qualification: AEC-Q101
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FF06030Q FF06030Q fastSiC Datasheet_FF06030Q.pdf Description: SICFET N-CH 650V 65A TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 18V
Power Dissipation (Max): 202W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 40mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3015 pF @ 400 V
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FF06030QA FF06030QA fastSiC Datasheet_FF06030QA.pdf Description: SICFET N-CH 650V 75A TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 18V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 40mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3015 pF @ 400 V
Qualification: AEC-Q101
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FF06060E-3A FF06060E-3A fastSiC Datasheet_FF06060E-3A.pdf Description: SICFET N-CH 650V 43A TO-247-3L
Packaging: Tube
Package / Case: TO-247-3
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 18V
Power Dissipation (Max): 202W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 20mA
Supplier Device Package: TO-247-3L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1499 pF @ 400 V
Qualification: AEC-Q101
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FF06060FA FF06060FA fastSiC 5700_Datasheet_FF06060FA.pdf Description: SICFET N-CH 650V 44A TOLL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 18V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 20mA
Supplier Device Package: TOLL
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1499 pF @ 400 V
Qualification: AEC-Q101
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FF06060J-7A FF06060J-7A fastSiC 5700_Datasheet_FF06060J-7A.pdf Description: SICFET N-CH 650V 44A TO-263-7L
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 18V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 20mA
Supplier Device Package: D2PAK-7L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1499 pF @ 400 V
Qualification: AEC-Q101
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FF06060QA FF06060QA fastSiC Datasheet_FF06060QA.pdf Description: SICFET N-CH 650V 43A TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 18V
Power Dissipation (Max): 202W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 20mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1499 pF @ 400 V
Qualification: AEC-Q101
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FF06100FA FF06100FA fastSiC 5700_Datasheet_FF06100FA.pdf Description: SICFET N-CH 650V 23.5A TOLL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.5A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 18V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 14mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V
auf Bestellung 300 Stücke:
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FF06100G FF06100G fastSiC FF06100G.PDF Description: SICFET N-CH 650V 20.6A PDFN8x8
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.6A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 18V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 14mA
Supplier Device Package: 4-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V
auf Bestellung 204 Stücke:
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FF06100J-7 FF06100J-7 fastSiC FF06100J-7.PDF Description: SICFET N-CH 650V 20.6A TO-263-7L
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.6A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 18V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 14mA
Supplier Device Package: D2PAK-7L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V
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2+16.4 EUR
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FF06320A FF06320A fastSiC FF06320A.PDF Description: SICFET N-CH 650V 8.8A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 2A, 18V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 4mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 317.5 pF @ 400 V
auf Bestellung 265 Stücke:
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5+4.58 EUR
13+1.69 EUR
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FF06320B FF06320B fastSiC FF06320B.PDF Description: SICFET N-CH 650V 8.6A PQFN5x6
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 2A, 18V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 4mA (Typ)
Supplier Device Package: 8-PQFN (5x6), Power56
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 318 pF @ 400 V
auf Bestellung 9975 Stücke:
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FF07009M2Q FF07009M2Q fastSiC FF07009M2Q.pdf Description: SICFET N-CH 750V 175A TO-247-4L
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FF07015QA FF07015QA fastSiC Datasheet_FF07015QA.pdf Description: SICFET N-CH 750V 136A TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 136A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 50A, 18V
Power Dissipation (Max): 555W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 329 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 7252 pF @ 500 V
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FF07025FA FF07025FA fastSiC Datasheet_FF07025FA.pdf Description: SICFET N-CH 750V 81A TOLL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 81A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 30A, 18V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 60mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 174 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 4604 pF @ 500 V
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FF07025J-7A FF07025J-7A fastSiC Datasheet_FF07025J-7A.pdf Description: SICFET N-CH 750V 81A TO-263-7L
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 81A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 30A, 18V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 60mA
Supplier Device Package: TO-263-7L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 174 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 4604 pF @ 500 V
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FF07025QA FF07025QA fastSiC Datasheet_FF07025QA.pdf Description: SICFET N-CH 750V 89A TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 30A, 18V
Power Dissipation (Max): 405W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 60mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 174 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 4604 pF @ 500 V
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1+64.97 EUR
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FF07035E-3A FF07035E-3A fastSiC Datasheet_FF07035E-3A.pdf Description: SICFET N-CH 750V 62A TO-247-3L
Packaging: Tube
Package / Case: TO-247-3
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 22A, 18V
Power Dissipation (Max): 277W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 40mA
Supplier Device Package: TO-247-3L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2818 pF @ 500 V
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FC06004A Datasheet_FC06004A.pdf
FC06004A
Hersteller: fastSiC
Description: DIODE SIL CARB 650V 4A TO-252
auf Bestellung 7850 Stücke:
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AnzahlPrivatkunde
15+1.44 EUR
18+1.21 EUR
100+0.55 EUR
3000+0.49 EUR
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FC06004B Datasheet_FC06004B.pdf
FC06004B
Hersteller: fastSiC
Description: DIODE SIL CARB 650V 4A PQFN5x6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 10pF @ 400V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: 8-PQFN (5x6)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 4 A
Current - Reverse Leakage @ Vr: 1 µA @ 520 V
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
15+1.44 EUR
18+1.21 EUR
100+0.55 EUR
4000+0.49 EUR
Mindestbestellmenge: 15 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FC06004C Datasheet_FC06004C.pdf
FC06004C
Hersteller: fastSiC
Description: DIODE SIL CARB 650V 4A TO-220
auf Bestellung 5988 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.37 EUR
11+1.96 EUR
100+0.88 EUR
2000+0.79 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FC06004D Datasheet_FC06004D.pdf
FC06004D
Hersteller: fastSiC
Description: DIODE SIL CARB 650V 4A TO-220FP
auf Bestellung 5995 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.37 EUR
11+1.96 EUR
100+0.88 EUR
2000+0.79 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FC06004Y 5700_Datasheet_FC06004Y.pdf
FC06004Y
Hersteller: fastSiC
Description: DIODE SIL CARB 650V 4A DO221AC
auf Bestellung 7345 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+2.05 EUR
28+0.75 EUR
100+0.7 EUR
Mindestbestellmenge: 11 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FC06006A Datasheet_FC06006A.pdf
FC06006A
Hersteller: fastSiC
Description: DIODE SIL CARB 650V 6A TO-252
auf Bestellung 13000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
12+1.76 EUR
15+1.48 EUR
100+0.67 EUR
3000+0.58 EUR
Mindestbestellmenge: 12 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FC06006B Datasheet_FC06006B.pdf
FC06006B
Hersteller: fastSiC
Description: DIODE SIL CARB 650V 6A PQFN5x6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 15pF @ 400V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 8-PQFN (5x6)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 6 A
Current - Reverse Leakage @ Vr: 0.8 µA @ 520 V
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
12+1.76 EUR
15+1.48 EUR
100+0.67 EUR
4000+0.58 EUR
Mindestbestellmenge: 12 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FC06006C Datasheet_FC06006C.pdf
FC06006C
Hersteller: fastSiC
Description: DIODE SIL CARB 650V 6A TO-220
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.68 EUR
10+2.23 EUR
100+1 EUR
2000+0.89 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FC06006D Datasheet_FC06006D.pdf
FC06006D
Hersteller: fastSiC
Description: DIODE SIL CARB 650V 6A TO-220FP
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.68 EUR
10+2.23 EUR
100+1 EUR
2000+0.89 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FC06006JA Datasheet_FC06006JA.pdf
FC06006JA
Hersteller: fastSiC
Description: DIODE SIL CARB 650V 6A TO-263
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.09 EUR
10+2.58 EUR
100+1.17 EUR
800+1.04 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FC06008A Datasheet_FC06008A.pdf
FC06008A
Hersteller: fastSiC
Description: DIODE SIL CARB 650V 8A TO-252
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
12+1.88 EUR
14+1.57 EUR
100+0.71 EUR
3000+0.63 EUR
Mindestbestellmenge: 12 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FC06008B Datasheet_FC06008B.pdf
FC06008B
Hersteller: fastSiC
Description: DIODE SIL CARB 650V 8A PQFN5x6
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
12+1.88 EUR
14+1.57 EUR
100+0.71 EUR
Mindestbestellmenge: 12 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FC06008C Datasheet_FC06008C.pdf
FC06008C
Hersteller: fastSiC
Description: DIODE SIL CARB 650V 8A TO-220
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.81 EUR
10+2.33 EUR
100+1.05 EUR
2000+0.93 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FC06008D Datasheet_FC06008D.pdf
FC06008D
Hersteller: fastSiC
Description: DIODE SIL CARB 650V 8A TO-220FP
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.81 EUR
10+2.33 EUR
100+1.05 EUR
2000+0.93 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FC06008JA Datasheet_FC06008JA.pdf
FC06008JA
Hersteller: fastSiC
Description: DIODE SIL CARB 650V 6A TO-263
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.22 EUR
10+2.69 EUR
100+1.21 EUR
800+1.07 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FC06010C Datasheet_FC06010C.pdf
FC06010C
Hersteller: fastSiC
Description: DIODE SIL CARB 650V 10A TO-220
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.01 EUR
10+2.52 EUR
100+1.13 EUR
2000+1.01 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FC06010D Datasheet_FC06010D.pdf
FC06010D
Hersteller: fastSiC
Description: DIODE SIL CARB 650V 10A TO-220FP
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.01 EUR
10+2.52 EUR
100+1.13 EUR
2000+1.01 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FC06010JA Datasheet_FC06010JA.pdf
FC06010JA
Hersteller: fastSiC
Description: DIODE SIL CARB 650V 6A TO-263
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.44 EUR
10+2.88 EUR
100+1.3 EUR
800+1.15 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FC06016C Datasheet_FC06016C.pdf
FC06016C
Hersteller: fastSiC
Description: DIODE SIL CARB 650V 16A TO-220
auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.01 EUR
10+2.52 EUR
100+1.13 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FC06020E-2 Datasheet_FC06020E-2.pdf
FC06020E-2
Hersteller: fastSiC
Description: DIODE SIL CARB 650V 20A TO-247-2
auf Bestellung 1990 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.47 EUR
10+6.24 EUR
100+2.81 EUR
600+2.49 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FC06020E-3 Datasheet_FC06020E-3.pdf
FC06020E-3
Hersteller: fastSiC
Description: DIODE SIL CARB 650V 20A TO-247-3
auf Bestellung 1992 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.47 EUR
10+6.24 EUR
100+2.81 EUR
600+2.49 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FC12002A Datasheet_FC12002A.pdf
FC12002A
Hersteller: fastSiC
Description: DIODE SIL CARB 1200V 2A TO252
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.64 EUR
16+1.33 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FC12002Y Datasheet_FC12002Y.pdf
FC12002Y
Hersteller: fastSiC
Description: DIODE SIC 1.2KV 2A DO221AC
auf Bestellung 1330 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.64 EUR
16+1.33 EUR
100+1.25 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FC12010E-3 Datasheet_FC12010E-3.pdf
FC12010E-3
Hersteller: fastSiC
Description: DIODE SIL CARB 1200V 10A TO-247-
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 21pF @ 800V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 0.1 µA @ 1200 V
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+10.5 EUR
10+8.76 EUR
100+3.94 EUR
600+3.5 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FC12020C 5700_Datasheet_FC12020C.pdf
FC12020C
Hersteller: fastSiC
Description: DIODE SIL CARB 1200V 20A TO-220-
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.33 EUR
10+6.94 EUR
100+3.12 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FC12020CA 5700_Datasheet_FC12020CA.pdf
FC12020CA
Hersteller: fastSiC
Description: DIODE SIL CARB 1200V 20A TO-220-
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.33 EUR
10+6.94 EUR
100+3.12 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FC12020E-2A Datasheet_FC12020E-2A.pdf
FC12020E-2A
Hersteller: fastSiC
Description: DIODE SIL CARB 1200V 20A TO-247-
auf Bestellung 1490 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+11.44 EUR
10+9.53 EUR
100+4.28 EUR
600+3.81 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FC12050E-2 Datasheet_FC12050E-2.pdf
FC12050E-2
Hersteller: fastSiC
Description: DIODE SIL CARB 1200V 50A TO-247-
auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+19.85 EUR
10+16.55 EUR
100+7.45 EUR
600+6.63 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FC17010E-2 5700_Datasheet_FC17010E-2.pdf
FC17010E-2
Hersteller: fastSiC
Description: DIODE SIL CARB 1700V 10A TO-247-
auf Bestellung 484 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+11.98 EUR
10+9.98 EUR
100+4.5 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FC17020E-3 Datasheet_FC17020E-3.pdf
FC17020E-3
Hersteller: fastSiC
Description: DIODE SIL CARB 1700V 20A TO-247-
auf Bestellung 688 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+19.18 EUR
10+15.98 EUR
100+7.19 EUR
600+6.39 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FF05130M2B 5700_FF05130M2B.pdf
FF05130M2B
Hersteller: fastSiC
Description: SICFET N-CH 500V 26A PQFN5x6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 6A, 15V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 6mA (Typ)
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 12V, 15V
Vgs (Max): +15V, -8V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 300 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 300 V
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.07 EUR
10+5.06 EUR
100+4.05 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FF05130M2G 5700_FF05130M2G.pdf
FF05130M2G
Hersteller: fastSiC
Description: SICFET N-CH 500V 23A PDFN8x8
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 170mOhm @ 6A, 15V
Power Dissipation (Max): 98W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 6mA (Typ)
Supplier Device Package: 4-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 12V, 15V
Vgs (Max): +15V, -8V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 300 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 300 V
Qualification: AEC-Q101
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
auf Bestellung 1198 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.63 EUR
10+7.19 EUR
100+5.75 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FF06010E-3A Datasheet_FF06010E-3A.pdf
FF06010E-3A
Hersteller: fastSiC
Description: SICFET N-CH 650V 169A TO-247-3L
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 169A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 60A, 18V
Power Dissipation (Max): 555W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100mA
Supplier Device Package: TO-247-3L
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 7390 pF @ 400 V
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+103.89 EUR
10+38.09 EUR
100+35.5 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FF06010FA 5700_Datasheet_FF06010FA.pdf
FF06010FA
Hersteller: fastSiC
Description: SICFET N-CH 650V 140A TOLL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 60A, 18V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 7390 pF @ 400 V
auf Bestellung 290 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+103.17 EUR
10+37.83 EUR
100+35.25 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FF06010QA Datasheet_FF06010QA.pdf
FF06010QA
Hersteller: fastSiC
Description: SICFET N-CH 650V 169A TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 169A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 60A, 18V
Power Dissipation (Max): 555W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 7390 pF @ 400 V
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+103.89 EUR
10+38.09 EUR
100+35.5 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FF06020E-3A Datasheet_FF06020E-3A.pdf
FF06020E-3A
Hersteller: fastSiC
Description: SICFET N-CH 650V 110A TO-247-3L
Input Capacitance (Ciss) (Max) @ Vds: 4437 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 194 nC @ 400 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +18V, -8V
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Supplier Device Package: TO-247-3L
Vgs(th) (Max) @ Id: 2.5V @ 60mA (Typ)
Power Dissipation (Max): 405W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 35A, 18V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+64.97 EUR
10+23.81 EUR
100+22.19 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FF06020FA 5700_Datasheet_FF06020FA.pdf
FF06020FA
Hersteller: fastSiC
Description: SICFET N-CH 650V 101A TOLL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 101A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 35A, 18V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 60mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 194 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 4437 pF @ 400 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+64.24 EUR
10+23.55 EUR
100+21.94 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FF06020J-7A 5700_Datasheet_FF06020J-7A.pdf
FF06020J-7A
Hersteller: fastSiC
Description: SICFET N-CH 650V 101A TO-263-7L
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 101A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 35A, 18V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 60mA
Supplier Device Package: D2PAK-7L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 194 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 4437 pF @ 400 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+64.24 EUR
10+23.55 EUR
100+21.94 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FF06020QA Datasheet_FF06020QA.pdf
FF06020QA
Hersteller: fastSiC
Description: SICFET N-CH 650V 110A TO-247-4L
Input Capacitance (Ciss) (Max) @ Vds: 4437 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 194 nC @ 15 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +18V, -8V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: TO-247-4L
Vgs(th) (Max) @ Id: 2.5V @ 60mA
Power Dissipation (Max): 405W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 35A, 18V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Package / Case: TO-247-4
Packaging: Tube
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+64.97 EUR
10+23.81 EUR
100+22.19 EUR
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FF06030E-3A Datasheet_FF06030E-3A.pdf?rlkey=uufjizik52w84bk5npha5rt9h&dl=0
FF06030E-3A
Hersteller: fastSiC
Description: SICFET N-CH 650V 75A TO-247-3L
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 18V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 40mA (Typ)
Supplier Device Package: TO-247-3L
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 3015 pF @ 400 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+38.96 EUR
10+14.29 EUR
100+13.32 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FF06030FA 5700_Datasheet_FF06030FA.pdf
FF06030FA
Hersteller: fastSiC
Description: SICFET N-CH 650V 74A TOLL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 18V
Power Dissipation (Max): 268W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 40mA
Supplier Device Package: TOLL
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3015 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+38.25 EUR
10+14.02 EUR
100+13.07 EUR
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FF06030J-7 FF06030J-7.PDF
FF06030J-7
Hersteller: fastSiC
Description: SICFET N-CH 650V 62A TO-263-7L
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 18V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 40mA (Typ)
Supplier Device Package: TO-263-7L
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 3015 pF @ 400 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+38.25 EUR
10+14.02 EUR
100+13.07 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FF06030J-7A 5700_Datasheet_FF06030J-7A.pdf
FF06030J-7A
Hersteller: fastSiC
Description: SICFET N-CH 650V 74A TO-263-7L
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 18V
Power Dissipation (Max): 268W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 40mA
Supplier Device Package: D2PAK-7L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3015 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+38.25 EUR
10+14.02 EUR
100+13.07 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FF06030Q Datasheet_FF06030Q.pdf
FF06030Q
Hersteller: fastSiC
Description: SICFET N-CH 650V 65A TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 18V
Power Dissipation (Max): 202W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 40mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3015 pF @ 400 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+35.08 EUR
10+12.86 EUR
100+11.98 EUR
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FF06030QA Datasheet_FF06030QA.pdf
FF06030QA
Hersteller: fastSiC
Description: SICFET N-CH 650V 75A TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 18V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 40mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3015 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+38.96 EUR
10+14.29 EUR
100+13.32 EUR
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FF06060E-3A Datasheet_FF06060E-3A.pdf
FF06060E-3A
Hersteller: fastSiC
Description: SICFET N-CH 650V 43A TO-247-3L
Packaging: Tube
Package / Case: TO-247-3
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 18V
Power Dissipation (Max): 202W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 20mA
Supplier Device Package: TO-247-3L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1499 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+22.12 EUR
10+8.12 EUR
100+7.56 EUR
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FF06060FA 5700_Datasheet_FF06060FA.pdf
FF06060FA
Hersteller: fastSiC
Description: SICFET N-CH 650V 44A TOLL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 18V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 20mA
Supplier Device Package: TOLL
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1499 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+21.41 EUR
10+7.84 EUR
100+7.31 EUR
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FF06060J-7A 5700_Datasheet_FF06060J-7A.pdf
FF06060J-7A
Hersteller: fastSiC
Description: SICFET N-CH 650V 44A TO-263-7L
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 18V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 20mA
Supplier Device Package: D2PAK-7L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1499 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+21.41 EUR
10+7.84 EUR
100+7.31 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FF06060QA Datasheet_FF06060QA.pdf
FF06060QA
Hersteller: fastSiC
Description: SICFET N-CH 650V 43A TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 18V
Power Dissipation (Max): 202W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 20mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1499 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+22.12 EUR
10+8.12 EUR
100+7.56 EUR
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FF06100FA 5700_Datasheet_FF06100FA.pdf
FF06100FA
Hersteller: fastSiC
Description: SICFET N-CH 650V 23.5A TOLL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.5A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 18V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 14mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+15.68 EUR
10+5.75 EUR
100+5.36 EUR
Mindestbestellmenge: 2 Stücke
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FF06100G FF06100G.PDF
FF06100G
Hersteller: fastSiC
Description: SICFET N-CH 650V 20.6A PDFN8x8
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.6A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 18V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 14mA
Supplier Device Package: 4-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V
auf Bestellung 204 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+14.79 EUR
10+5.41 EUR
100+5.05 EUR
Mindestbestellmenge: 2 Stücke
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FF06100J-7 FF06100J-7.PDF
FF06100J-7
Hersteller: fastSiC
Description: SICFET N-CH 650V 20.6A TO-263-7L
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.6A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 18V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 14mA
Supplier Device Package: D2PAK-7L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+16.4 EUR
10+6.01 EUR
100+5.6 EUR
Mindestbestellmenge: 2 Stücke
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FF06320A FF06320A.PDF
FF06320A
Hersteller: fastSiC
Description: SICFET N-CH 650V 8.8A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 2A, 18V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 4mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 317.5 pF @ 400 V
auf Bestellung 265 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.58 EUR
13+1.69 EUR
100+1.57 EUR
Mindestbestellmenge: 5 Stücke
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FF06320B FF06320B.PDF
FF06320B
Hersteller: fastSiC
Description: SICFET N-CH 650V 8.6A PQFN5x6
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 2A, 18V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 4mA (Typ)
Supplier Device Package: 8-PQFN (5x6), Power56
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 318 pF @ 400 V
auf Bestellung 9975 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.58 EUR
13+1.68 EUR
100+1.56 EUR
4000+1.52 EUR
Mindestbestellmenge: 5 Stücke
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FF07009M2Q FF07009M2Q.pdf
FF07009M2Q
Hersteller: fastSiC
Description: SICFET N-CH 750V 175A TO-247-4L
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+82.12 EUR
10+68.42 EUR
100+54.74 EUR
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FF07015QA Datasheet_FF07015QA.pdf
FF07015QA
Hersteller: fastSiC
Description: SICFET N-CH 750V 136A TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 136A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 50A, 18V
Power Dissipation (Max): 555W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 329 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 7252 pF @ 500 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+103.89 EUR
10+38.09 EUR
100+35.5 EUR
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FF07025FA Datasheet_FF07025FA.pdf
FF07025FA
Hersteller: fastSiC
Description: SICFET N-CH 750V 81A TOLL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 81A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 30A, 18V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 60mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 174 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 4604 pF @ 500 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+64.24 EUR
10+23.55 EUR
100+21.94 EUR
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FF07025J-7A Datasheet_FF07025J-7A.pdf
FF07025J-7A
Hersteller: fastSiC
Description: SICFET N-CH 750V 81A TO-263-7L
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 81A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 30A, 18V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 60mA
Supplier Device Package: TO-263-7L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 174 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 4604 pF @ 500 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+64.24 EUR
10+23.55 EUR
100+21.94 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FF07025QA Datasheet_FF07025QA.pdf
FF07025QA
Hersteller: fastSiC
Description: SICFET N-CH 750V 89A TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 30A, 18V
Power Dissipation (Max): 405W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 60mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 174 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 4604 pF @ 500 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+64.97 EUR
10+23.81 EUR
100+22.19 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FF07035E-3A Datasheet_FF07035E-3A.pdf
FF07035E-3A
Hersteller: fastSiC
Description: SICFET N-CH 750V 62A TO-247-3L
Packaging: Tube
Package / Case: TO-247-3
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 22A, 18V
Power Dissipation (Max): 277W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 40mA
Supplier Device Package: TO-247-3L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2818 pF @ 500 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+38.96 EUR
10+14.29 EUR
100+13.32 EUR
Im Einkaufswagen  Stück im Wert von  UAH
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