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2SA1943 2SA1943 Guangdong Inmark Electronics Co., Ltd. audiotube_54.html Description: TRANS PNP 230V 15A TO-3PL
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -40°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3PL
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 180 W
Produkt ist nicht verfügbar
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2SC5200 2SC5200 Guangdong Inmark Electronics Co., Ltd. audiotube_53.html Description: TRANS NPN 230V 15A TO-3PL
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -40°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3PL
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 180 W
Produkt ist nicht verfügbar
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5819WS 5819WS Guangdong Inmark Electronics Co., Ltd. diodeproducts_14.html Description: DIODE ARR SCHOTT 40V 1A SOD323
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Technology: Schottky
Capacitance @ Vr, F: 120pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 0.6 V @ 1 mA
Current - Reverse Leakage @ Vr: 1000 µA @ 40 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
143+0.12 EUR
250+0.07 EUR
417+0.042 EUR
596+0.03 EUR
1000+0.025 EUR
3000+0.021 EUR
Mindestbestellmenge: 143
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BAV21W BAV21W Guangdong Inmark Electronics Co., Ltd. index_63.html Description: DIODE ARRAY GP 250V 200MA SOT123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 0.1 µA @ 200 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
334+0.053 EUR
455+0.039 EUR
764+0.023 EUR
1092+0.016 EUR
1284+0.014 EUR
3000+0.012 EUR
Mindestbestellmenge: 334
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BAV21WS BAV21WS Guangdong Inmark Electronics Co., Ltd. index_70.html Description: DIODE ARRAY GP 250V 200MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 0.1 µA @ 200 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
334+0.053 EUR
455+0.039 EUR
764+0.023 EUR
1092+0.016 EUR
1284+0.014 EUR
3000+0.012 EUR
Mindestbestellmenge: 334
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BU406 BU406 Guangdong Inmark Electronics Co., Ltd. index_18.html Description: TRANS NPN 400V 7A To-220
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 0.5A, 5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 60 W
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.46 EUR
12+1.48 EUR
100+0.89 EUR
500+0.62 EUR
1000+0.53 EUR
Mindestbestellmenge: 8
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BZT52C13S BZT52C13S Guangdong Inmark Electronics Co., Ltd. index_104.html Description: DIODE ZENER ARRAY 13V SOD-323
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 14.2 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 0.1 µA @ 8 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
143+0.12 EUR
264+0.067 EUR
433+0.041 EUR
620+0.028 EUR
1000+0.024 EUR
3000+0.02 EUR
Mindestbestellmenge: 143
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BZT52C13T1G BZT52C13T1G Guangdong Inmark Electronics Co., Ltd. index_67.html Description: DIODE ZENER ARRAY 13V SOD-123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 14.2 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 0.1 µA @ 8 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
143+0.12 EUR
264+0.067 EUR
433+0.041 EUR
620+0.028 EUR
1000+0.024 EUR
3000+0.02 EUR
Mindestbestellmenge: 143
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BZX84C16 BZX84C16 Guangdong Inmark Electronics Co., Ltd. index_32.html Description: DIODE ZENER ARRAY 16V SOT-23
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: SOT-23
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 0.1 µA @ 11 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
125+0.14 EUR
209+0.084 EUR
348+0.051 EUR
500+0.035 EUR
1000+0.03 EUR
3000+0.026 EUR
Mindestbestellmenge: 125
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BZX84C43 BZX84C43 Guangdong Inmark Electronics Co., Ltd. index_42.html Description: DIODE ZENER ARRAY 43V SOT-23
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 78 Ohms
Supplier Device Package: SOT-23
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 0.4 µA @ 30 V
Produkt ist nicht verfügbar
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BZX84C47 BZX84C47 Guangdong Inmark Electronics Co., Ltd. index_43.html Description: DIODE ZENER ARRAY 47V SOT-23
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 88 Ohms
Supplier Device Package: SOT-23
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 0.4 µA @ 33 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
125+0.14 EUR
209+0.084 EUR
348+0.051 EUR
500+0.035 EUR
1000+0.03 EUR
3000+0.026 EUR
Mindestbestellmenge: 125
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BZX84C51 BZX84C51 Guangdong Inmark Electronics Co., Ltd. index_44.html Description: DIODE ZENER ARRAY 51V SOT-23
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 98 Ohms
Supplier Device Package: SOT-23
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 0.4 µA @ 36 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
125+0.14 EUR
209+0.084 EUR
348+0.051 EUR
500+0.035 EUR
1000+0.03 EUR
3000+0.026 EUR
Mindestbestellmenge: 125
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MBR10100A MBR10100A Guangdong Inmark Electronics Co., Ltd. index_143.html Description: DIODE ARR SCHOTT 100V 10A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 0.83 V @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.62 EUR
19+0.97 EUR
100+0.58 EUR
500+0.41 EUR
1000+0.35 EUR
Mindestbestellmenge: 11
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MBR10100F MBR10100F Guangdong Inmark Electronics Co., Ltd. index_145.html Description: DIODE ARR SCHOTT 100V 10A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 0.83 V @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.41 EUR
21+0.84 EUR
100+0.51 EUR
500+0.35 EUR
1000+0.3 EUR
Mindestbestellmenge: 13
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MBR1045A MBR1045A Guangdong Inmark Electronics Co., Ltd. index_133.html Description: DIODE ARR SCHOTT 45V 10A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 0.58 V @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.57 EUR
19+0.94 EUR
100+0.57 EUR
500+0.4 EUR
1000+0.34 EUR
Mindestbestellmenge: 12
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MBR1045F MBR1045F Guangdong Inmark Electronics Co., Ltd. index_135.html Description: DIODE ARR SCHOTT 45V 10A TO-22F
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 0.58 V @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.53 EUR
20+0.92 EUR
100+0.55 EUR
500+0.39 EUR
1000+0.33 EUR
Mindestbestellmenge: 12
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MBR20100A MBR20100A Guangdong Inmark Electronics Co., Ltd. index_168.html Description: DIODE ARR SCHOTT 100V 20A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 0.85 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.83 EUR
16+1.1 EUR
100+0.66 EUR
500+0.46 EUR
1000+0.39 EUR
Mindestbestellmenge: 10
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MBR20100F MBR20100F Guangdong Inmark Electronics Co., Ltd. index_170.html Description: DIODE ARR SCHOTT 100V 20A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 0.85 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.53 EUR
20+0.92 EUR
100+0.55 EUR
500+0.39 EUR
1000+0.33 EUR
Mindestbestellmenge: 12
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MBR20200A MBR20200A Guangdong Inmark Electronics Co., Ltd. index_178.html Description: DIODE ARR SCHOTT 200V 20A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 0.95 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Produkt ist nicht verfügbar
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MBR20200F MBR20200F Guangdong Inmark Electronics Co., Ltd. index_180.html Description: DIODE ARR SCHOTT 200V 20A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 0.95 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Produkt ist nicht verfügbar
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MBR2045A MBR2045A Guangdong Inmark Electronics Co., Ltd. index_158.html Description: DIODE ARR SCHOTT 45V 20A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 0.63 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Produkt ist nicht verfügbar
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MBR2045F MBR2045F Guangdong Inmark Electronics Co., Ltd. index_160.html Description: DIODE ARR SCHOTT 45V 20A TO-220F
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 0.63 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Produkt ist nicht verfügbar
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MBR30100A MBR30100A Guangdong Inmark Electronics Co., Ltd. index_194.html Description: DIODE ARR SCHOTT 100V 30A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 0.86 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Produkt ist nicht verfügbar
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MBR30100F MBR30100F Guangdong Inmark Electronics Co., Ltd. index_196.html Description: DIODE ARR SCHOTT 100V 30A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 0.86 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Produkt ist nicht verfügbar
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MBR30200A MBR30200A Guangdong Inmark Electronics Co., Ltd. index_204.html Description: DIODE ARR SCHOTT 200V 30A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 0.94 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.34 EUR
13+1.41 EUR
100+0.84 EUR
500+0.59 EUR
1000+0.5 EUR
Mindestbestellmenge: 8
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MBR30200F MBR30200F Guangdong Inmark Electronics Co., Ltd. index_206.html Description: DIODE ARR SCHOTT 200V 30A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 0.94 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.09 EUR
15+1.25 EUR
100+0.75 EUR
500+0.53 EUR
1000+0.45 EUR
Mindestbestellmenge: 9
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MBR40100A MBR40100A Guangdong Inmark Electronics Co., Ltd. index_219.html Description: DIODE ARR SCHOTT 100V 40A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 0.83 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Produkt ist nicht verfügbar
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MBR40100F MBR40100F Guangdong Inmark Electronics Co., Ltd. index_221.html Description: DIODE ARR SCHOTT 100V 40A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 0.83 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Produkt ist nicht verfügbar
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MBR40200A MBR40200A Guangdong Inmark Electronics Co., Ltd. index_7.html Description: DIODE ARR SCHOTT 200V 40A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 0.95 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Produkt ist nicht verfügbar
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MBR40200F MBR40200F Guangdong Inmark Electronics Co., Ltd. index_9.html Description: DIODE ARR SCHOTT 200V 40A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 0.95 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Produkt ist nicht verfügbar
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MBR4060A MBR4060A Guangdong Inmark Electronics Co., Ltd. index_214.html Description: DIODE ARR SCHOTT 60V 40A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 0.72 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
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MBR4060F MBR4060F Guangdong Inmark Electronics Co., Ltd. index_216.html Description: DIODE ARR SCHOTT 60V 40A TO-220F
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 0.72 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
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MJE15032 MJE15032 Guangdong Inmark Electronics Co., Ltd. audiotube_28.html Description: TRANS NPN 250V 8A To-220
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -40°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 50 W
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MJE15033 MJE15033 Guangdong Inmark Electronics Co., Ltd. audiotube_27.html Description: TRANS PNP 250V 8A To-220
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -40°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 50 W
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MMBT2222A MMBT2222A Guangdong Inmark Electronics Co., Ltd. smallsignaltransistor_5.html Description: TRANS NPN 40V 600MA SOT-23
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 350 mW
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MMBT2907 MMBT2907 Guangdong Inmark Electronics Co., Ltd. smallsignaltransistor_6.html Description: TRANS PNP 60V 600MA SOT-23
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 15mA, 150mA
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 250 mW
Produkt ist nicht verfügbar
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MMBT3906 MMBT3906 Guangdong Inmark Electronics Co., Ltd. smallsignaltransistor_2.html Description: TRANS PNP 40V 200MA SOT-23
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 300 mW
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MMBT5551 MMBT5551 Guangdong Inmark Electronics Co., Ltd. smallsignaltransistor_3.html Description: TRANS NPN 160V 600MA SOT-23
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 350 mW
Produkt ist nicht verfügbar
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MOT10N65D MOT10N65D Guangdong Inmark Electronics Co., Ltd. index_122.html Description: MOSFET N-CH 650V 10A 0.88 To252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Power Dissipation (Max): 100W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
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MOT10N65F MOT10N65F Guangdong Inmark Electronics Co., Ltd. index_119.html Description: MOSFET N-CH 650V 10A 0.67 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A
Rds On (Max) @ Id, Vgs: 75mOhm @ 5A, 10V
Power Dissipation (Max): 40W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
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MOT10N80HF MOT10N80HF Guangdong Inmark Electronics Co., Ltd. index_160.html Description: MOSFET N-CH 800V 10A 1.4 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A
Rds On (Max) @ Id, Vgs: 1.55Ohm @ 5A, 10V
Power Dissipation (Max): 60W
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Produkt ist nicht verfügbar
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MOT1113T4 MOT1113T4 Guangdong Inmark Electronics Co., Ltd. mediumsgt_870.html Description: MOSFET N-CH 100V 399A 1.1m Toll-
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 399A
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Power Dissipation (Max): 455W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TOLT
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13574 pF @ 50 V
auf Bestellung 2000 Stücke:
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MOT12N65A MOT12N65A Guangdong Inmark Electronics Co., Ltd. index_123.html Description: MOSFET N-CH 650V 12A 0.56 To220
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A
Rds On (Max) @ Id, Vgs: 65mOhm @ 6A, 10V
Power Dissipation (Max): 145W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Produkt ist nicht verfügbar
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MOT12N65F MOT12N65F Guangdong Inmark Electronics Co., Ltd. index_124.html Description: MOSFET N-CH 650V 12A 0.56 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A
Rds On (Max) @ Id, Vgs: 65mOhm @ 6A, 10V
Power Dissipation (Max): 42W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Produkt ist nicht verfügbar
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MOT12N65T MOT12N65T Guangdong Inmark Electronics Co., Ltd. mediumsgt_901.html Description: MOSFET N-CH 650V 12A 0.62m Toll-
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A
Rds On (Max) @ Id, Vgs: 72mOhm @ 6A, 10V
Power Dissipation (Max): 208W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TOLL-8L
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Produkt ist nicht verfügbar
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MOT13007MA MOT13007MA Guangdong Inmark Electronics Co., Ltd. index_6.html Description: TRANS NPN 700V 8A To-220
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 1A, 5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V
Frequency - Transition: 14MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 80 W
Produkt ist nicht verfügbar
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MOT13007MF MOT13007MF Guangdong Inmark Electronics Co., Ltd. index_8.html Description: TRANS NPN 700V 8A To-220F
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 1A, 5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V
Frequency - Transition: 14MHz
Supplier Device Package: TO-220FP
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 36 W
Produkt ist nicht verfügbar
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MOT13009DW MOT13009DW Guangdong Inmark Electronics Co., Ltd. index_15.html Description: TRANS NPN 700V 12A To-247S
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -40°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 3A, 12A
Current - Collector Cutoff (Max): 1mA
Frequency - Transition: 4MHz
Supplier Device Package: TO-247S
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 80 W
auf Bestellung 3000 Stücke:
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6+3.48 EUR
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100+1.25 EUR
500+0.88 EUR
1000+0.75 EUR
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MOT13N50A MOT13N50A Guangdong Inmark Electronics Co., Ltd. index_29.html Description: MOSFET N-CH 500V 13A 0.39 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A
Rds On (Max) @ Id, Vgs: 45mOhm @ 6.5A, 10V
Power Dissipation (Max): 130W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
auf Bestellung 1000 Stücke:
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MOT13N50HF MOT13N50HF Guangdong Inmark Electronics Co., Ltd. index_34.html Description: MOSFET N-CH 500V 13A 0.39 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A
Rds On (Max) @ Id, Vgs: 45mOhm @ 6.5A, 10V
Power Dissipation (Max): 39W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
auf Bestellung 1000 Stücke:
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MOT13N50SF MOT13N50SF Guangdong Inmark Electronics Co., Ltd. index_30.html Description: MOSFET N-CH 500V 13A 0.51 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A
Rds On (Max) @ Id, Vgs: 55mOhm @ 6.5A, 10V
Power Dissipation (Max): 48W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
auf Bestellung 1000 Stücke:
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6+3.13 EUR
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100+1.13 EUR
500+0.79 EUR
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MOT150N03A MOT150N03A Guangdong Inmark Electronics Co., Ltd. trenchsgtmOS_740.html Description: MOSFET N-CH 30V 150A 3.9m To-22
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 130W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6297 pF @ 15 V
Produkt ist nicht verfügbar
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MOT150N03D MOT150N03D Guangdong Inmark Electronics Co., Ltd. trenchsgtmOS_738.html Description: MOSFET N-CH 30V 150A 1.5m To-25
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
Power Dissipation (Max): 83W
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 20 V
Produkt ist nicht verfügbar
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MOT15N50HF MOT15N50HF Guangdong Inmark Electronics Co., Ltd. index_36.html Description: MOSFET N-CH 500V 15A 0.35 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A
Rds On (Max) @ Id, Vgs: 4mOhm @ 7.5A, 10V
Power Dissipation (Max): 40W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.68 EUR
10+2.82 EUR
100+1.69 EUR
500+1.18 EUR
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MOT16N50HF MOT16N50HF Guangdong Inmark Electronics Co., Ltd. index_38.html Description: MOSFET N-CH 500V 16A 0.3 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A
Rds On (Max) @ Id, Vgs: 35mOhm @ 8A, 10V
Power Dissipation (Max): 40W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.95 EUR
10+2.97 EUR
100+1.78 EUR
500+1.25 EUR
1000+1.06 EUR
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MOT16N65HF MOT16N65HF Guangdong Inmark Electronics Co., Ltd. index_128.html Description: MOSFET N-CH 650V 16A 0.47 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A
Rds On (Max) @ Id, Vgs: 55mOhm @ 8A, 10V
Power Dissipation (Max): 60W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
Produkt ist nicht verfügbar
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MOT18N50HF MOT18N50HF Guangdong Inmark Electronics Co., Ltd. index_40.html Description: MOSFET N-CH 500V 18A 0.27 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A
Rds On (Max) @ Id, Vgs: 32mOhm @ 9A, 10V
Power Dissipation (Max): 42W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.14 EUR
10+3.08 EUR
100+1.85 EUR
500+1.29 EUR
1000+1.1 EUR
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MOT18N65HF MOT18N65HF Guangdong Inmark Electronics Co., Ltd. index_129.html Description: MOSFET N-CH 650V 18A 0.35 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A
Rds On (Max) @ Id, Vgs: 43mOhm @ 9A, 10V
Power Dissipation (Max): 50W
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.58 EUR
10+3.35 EUR
100+2.01 EUR
500+1.41 EUR
1000+1.2 EUR
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MOT20N50HF MOT20N50HF Guangdong Inmark Electronics Co., Ltd. index_42.html Description: MOSFET N-CH 500V 20A 0.19 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 24mOhm @ 10A, 10V
Power Dissipation (Max): 45W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.81 EUR
10+3.49 EUR
100+2.09 EUR
500+1.47 EUR
1000+1.25 EUR
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MOT20N50W MOT20N50W Guangdong Inmark Electronics Co., Ltd. index_43.html Description: MOSFET N-CH 500V 20A 0.19 To247s
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 24mOhm @ 10A, 10V
Power Dissipation (Max): 260W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.48 EUR
10+5.09 EUR
100+3.06 EUR
600+2.14 EUR
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2SA1943 audiotube_54.html
2SA1943
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS PNP 230V 15A TO-3PL
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -40°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3PL
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 180 W
Produkt ist nicht verfügbar
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2SC5200 audiotube_53.html
2SC5200
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS NPN 230V 15A TO-3PL
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -40°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3PL
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 180 W
Produkt ist nicht verfügbar
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5819WS diodeproducts_14.html
5819WS
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 40V 1A SOD323
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Technology: Schottky
Capacitance @ Vr, F: 120pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 0.6 V @ 1 mA
Current - Reverse Leakage @ Vr: 1000 µA @ 40 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
143+0.12 EUR
250+0.07 EUR
417+0.042 EUR
596+0.03 EUR
1000+0.025 EUR
3000+0.021 EUR
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BAV21W index_63.html
BAV21W
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARRAY GP 250V 200MA SOT123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 0.1 µA @ 200 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
334+0.053 EUR
455+0.039 EUR
764+0.023 EUR
1092+0.016 EUR
1284+0.014 EUR
3000+0.012 EUR
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BAV21WS index_70.html
BAV21WS
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARRAY GP 250V 200MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 0.1 µA @ 200 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
334+0.053 EUR
455+0.039 EUR
764+0.023 EUR
1092+0.016 EUR
1284+0.014 EUR
3000+0.012 EUR
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BU406 index_18.html
BU406
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS NPN 400V 7A To-220
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 0.5A, 5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 60 W
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.46 EUR
12+1.48 EUR
100+0.89 EUR
500+0.62 EUR
1000+0.53 EUR
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BZT52C13S index_104.html
BZT52C13S
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ZENER ARRAY 13V SOD-323
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 14.2 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 0.1 µA @ 8 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
143+0.12 EUR
264+0.067 EUR
433+0.041 EUR
620+0.028 EUR
1000+0.024 EUR
3000+0.02 EUR
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BZT52C13T1G index_67.html
BZT52C13T1G
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ZENER ARRAY 13V SOD-123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 14.2 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 0.1 µA @ 8 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
143+0.12 EUR
264+0.067 EUR
433+0.041 EUR
620+0.028 EUR
1000+0.024 EUR
3000+0.02 EUR
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BZX84C16 index_32.html
BZX84C16
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ZENER ARRAY 16V SOT-23
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: SOT-23
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 0.1 µA @ 11 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
125+0.14 EUR
209+0.084 EUR
348+0.051 EUR
500+0.035 EUR
1000+0.03 EUR
3000+0.026 EUR
Mindestbestellmenge: 125
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BZX84C43 index_42.html
BZX84C43
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ZENER ARRAY 43V SOT-23
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 78 Ohms
Supplier Device Package: SOT-23
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 0.4 µA @ 30 V
Produkt ist nicht verfügbar
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BZX84C47 index_43.html
BZX84C47
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ZENER ARRAY 47V SOT-23
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 88 Ohms
Supplier Device Package: SOT-23
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 0.4 µA @ 33 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
125+0.14 EUR
209+0.084 EUR
348+0.051 EUR
500+0.035 EUR
1000+0.03 EUR
3000+0.026 EUR
Mindestbestellmenge: 125
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BZX84C51 index_44.html
BZX84C51
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ZENER ARRAY 51V SOT-23
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 98 Ohms
Supplier Device Package: SOT-23
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 0.4 µA @ 36 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
125+0.14 EUR
209+0.084 EUR
348+0.051 EUR
500+0.035 EUR
1000+0.03 EUR
3000+0.026 EUR
Mindestbestellmenge: 125
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MBR10100A index_143.html
MBR10100A
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 100V 10A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 0.83 V @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.62 EUR
19+0.97 EUR
100+0.58 EUR
500+0.41 EUR
1000+0.35 EUR
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MBR10100F index_145.html
MBR10100F
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 100V 10A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 0.83 V @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.41 EUR
21+0.84 EUR
100+0.51 EUR
500+0.35 EUR
1000+0.3 EUR
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MBR1045A index_133.html
MBR1045A
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 45V 10A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 0.58 V @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.57 EUR
19+0.94 EUR
100+0.57 EUR
500+0.4 EUR
1000+0.34 EUR
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MBR1045F index_135.html
MBR1045F
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 45V 10A TO-22F
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 0.58 V @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.53 EUR
20+0.92 EUR
100+0.55 EUR
500+0.39 EUR
1000+0.33 EUR
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MBR20100A index_168.html
MBR20100A
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 100V 20A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 0.85 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.83 EUR
16+1.1 EUR
100+0.66 EUR
500+0.46 EUR
1000+0.39 EUR
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MBR20100F index_170.html
MBR20100F
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 100V 20A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 0.85 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.53 EUR
20+0.92 EUR
100+0.55 EUR
500+0.39 EUR
1000+0.33 EUR
Mindestbestellmenge: 12
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MBR20200A index_178.html
MBR20200A
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 200V 20A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 0.95 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Produkt ist nicht verfügbar
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MBR20200F index_180.html
MBR20200F
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 200V 20A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 0.95 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Produkt ist nicht verfügbar
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MBR2045A index_158.html
MBR2045A
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 45V 20A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 0.63 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Produkt ist nicht verfügbar
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MBR2045F index_160.html
MBR2045F
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 45V 20A TO-220F
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 0.63 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Produkt ist nicht verfügbar
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MBR30100A index_194.html
MBR30100A
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 100V 30A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 0.86 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Produkt ist nicht verfügbar
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MBR30100F index_196.html
MBR30100F
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 100V 30A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 0.86 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Produkt ist nicht verfügbar
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MBR30200A index_204.html
MBR30200A
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 200V 30A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 0.94 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.34 EUR
13+1.41 EUR
100+0.84 EUR
500+0.59 EUR
1000+0.5 EUR
Mindestbestellmenge: 8
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MBR30200F index_206.html
MBR30200F
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 200V 30A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 0.94 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.09 EUR
15+1.25 EUR
100+0.75 EUR
500+0.53 EUR
1000+0.45 EUR
Mindestbestellmenge: 9
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MBR40100A index_219.html
MBR40100A
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 100V 40A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 0.83 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Produkt ist nicht verfügbar
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MBR40100F index_221.html
MBR40100F
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 100V 40A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 0.83 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Produkt ist nicht verfügbar
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MBR40200A index_7.html
MBR40200A
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 200V 40A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 0.95 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Produkt ist nicht verfügbar
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MBR40200F index_9.html
MBR40200F
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 200V 40A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 0.95 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Produkt ist nicht verfügbar
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MBR4060A index_214.html
MBR4060A
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 60V 40A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 0.72 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+2.99 EUR
10+1.79 EUR
100+1.07 EUR
500+0.75 EUR
1000+0.64 EUR
Mindestbestellmenge: 6
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MBR4060F index_216.html
MBR4060F
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 60V 40A TO-220F
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 0.72 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.78 EUR
11+1.66 EUR
100+1 EUR
500+0.7 EUR
1000+0.59 EUR
Mindestbestellmenge: 7
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MJE15032 audiotube_28.html
MJE15032
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS NPN 250V 8A To-220
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -40°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 50 W
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.82 EUR
11+1.68 EUR
100+1.01 EUR
500+0.71 EUR
1000+0.6 EUR
Mindestbestellmenge: 7
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MJE15033 audiotube_27.html
MJE15033
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS PNP 250V 8A To-220
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -40°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 50 W
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.82 EUR
11+1.68 EUR
100+1.01 EUR
500+0.71 EUR
1000+0.6 EUR
Mindestbestellmenge: 7
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MMBT2222A smallsignaltransistor_5.html
MMBT2222A
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS NPN 40V 600MA SOT-23
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 350 mW
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
167+0.11 EUR
295+0.06 EUR
498+0.035 EUR
713+0.025 EUR
1000+0.021 EUR
Mindestbestellmenge: 167
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MMBT2907 smallsignaltransistor_6.html
MMBT2907
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS PNP 60V 600MA SOT-23
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 15mA, 150mA
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 250 mW
Produkt ist nicht verfügbar
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MMBT3906 smallsignaltransistor_2.html
MMBT3906
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS PNP 40V 200MA SOT-23
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 300 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
334+0.053 EUR
455+0.039 EUR
770+0.023 EUR
1099+0.016 EUR
1294+0.014 EUR
3000+0.012 EUR
Mindestbestellmenge: 334
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MMBT5551 smallsignaltransistor_3.html
MMBT5551
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS NPN 160V 600MA SOT-23
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 350 mW
Produkt ist nicht verfügbar
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MOT10N65D index_122.html
MOT10N65D
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 10A 0.88 To252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Power Dissipation (Max): 100W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.19 EUR
10+1.91 EUR
100+1.15 EUR
500+0.8 EUR
1000+0.68 EUR
2500+0.58 EUR
Mindestbestellmenge: 6
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MOT10N65F index_119.html
MOT10N65F
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 10A 0.67 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A
Rds On (Max) @ Id, Vgs: 75mOhm @ 5A, 10V
Power Dissipation (Max): 40W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.4 EUR
10+2.04 EUR
100+1.22 EUR
500+0.86 EUR
1000+0.73 EUR
Mindestbestellmenge: 6
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MOT10N80HF index_160.html
MOT10N80HF
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 800V 10A 1.4 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A
Rds On (Max) @ Id, Vgs: 1.55Ohm @ 5A, 10V
Power Dissipation (Max): 60W
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Produkt ist nicht verfügbar
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MOT1113T4 mediumsgt_870.html
MOT1113T4
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 100V 399A 1.1m Toll-
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 399A
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Power Dissipation (Max): 455W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TOLT
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13574 pF @ 50 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+14.5 EUR
10+8.7 EUR
100+5.22 EUR
500+3.65 EUR
1000+3.11 EUR
2000+2.64 EUR
Mindestbestellmenge: 2
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MOT12N65A index_123.html
MOT12N65A
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 12A 0.56 To220
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A
Rds On (Max) @ Id, Vgs: 65mOhm @ 6A, 10V
Power Dissipation (Max): 145W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Produkt ist nicht verfügbar
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MOT12N65F index_124.html
MOT12N65F
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 12A 0.56 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A
Rds On (Max) @ Id, Vgs: 65mOhm @ 6A, 10V
Power Dissipation (Max): 42W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Produkt ist nicht verfügbar
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MOT12N65T mediumsgt_901.html
MOT12N65T
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 12A 0.62m Toll-
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A
Rds On (Max) @ Id, Vgs: 72mOhm @ 6A, 10V
Power Dissipation (Max): 208W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TOLL-8L
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Produkt ist nicht verfügbar
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MOT13007MA index_6.html
MOT13007MA
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS NPN 700V 8A To-220
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 1A, 5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V
Frequency - Transition: 14MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 80 W
Produkt ist nicht verfügbar
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MOT13007MF index_8.html
MOT13007MF
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS NPN 700V 8A To-220F
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 1A, 5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V
Frequency - Transition: 14MHz
Supplier Device Package: TO-220FP
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 36 W
Produkt ist nicht verfügbar
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MOT13009DW index_15.html
MOT13009DW
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS NPN 700V 12A To-247S
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -40°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 3A, 12A
Current - Collector Cutoff (Max): 1mA
Frequency - Transition: 4MHz
Supplier Device Package: TO-247S
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 80 W
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.48 EUR
10+2.09 EUR
100+1.25 EUR
500+0.88 EUR
1000+0.75 EUR
3000+0.63 EUR
Mindestbestellmenge: 6
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MOT13N50A index_29.html
MOT13N50A
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 500V 13A 0.39 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A
Rds On (Max) @ Id, Vgs: 45mOhm @ 6.5A, 10V
Power Dissipation (Max): 130W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.45 EUR
10+2.67 EUR
100+1.6 EUR
500+1.12 EUR
1000+0.95 EUR
Mindestbestellmenge: 4
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MOT13N50HF index_34.html
MOT13N50HF
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 500V 13A 0.39 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A
Rds On (Max) @ Id, Vgs: 45mOhm @ 6.5A, 10V
Power Dissipation (Max): 39W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.45 EUR
10+2.67 EUR
100+1.6 EUR
500+1.12 EUR
1000+0.95 EUR
Mindestbestellmenge: 4
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MOT13N50SF index_30.html
MOT13N50SF
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 500V 13A 0.51 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A
Rds On (Max) @ Id, Vgs: 55mOhm @ 6.5A, 10V
Power Dissipation (Max): 48W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.13 EUR
10+1.88 EUR
100+1.13 EUR
500+0.79 EUR
1000+0.67 EUR
Mindestbestellmenge: 6
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MOT150N03A trenchsgtmOS_740.html
MOT150N03A
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 30V 150A 3.9m To-22
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 130W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6297 pF @ 15 V
Produkt ist nicht verfügbar
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MOT150N03D trenchsgtmOS_738.html
MOT150N03D
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 30V 150A 1.5m To-25
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
Power Dissipation (Max): 83W
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 20 V
Produkt ist nicht verfügbar
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MOT15N50HF index_36.html
MOT15N50HF
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 500V 15A 0.35 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A
Rds On (Max) @ Id, Vgs: 4mOhm @ 7.5A, 10V
Power Dissipation (Max): 40W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.68 EUR
10+2.82 EUR
100+1.69 EUR
500+1.18 EUR
1000+1 EUR
Mindestbestellmenge: 4
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MOT16N50HF index_38.html
MOT16N50HF
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 500V 16A 0.3 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A
Rds On (Max) @ Id, Vgs: 35mOhm @ 8A, 10V
Power Dissipation (Max): 40W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.95 EUR
10+2.97 EUR
100+1.78 EUR
500+1.25 EUR
1000+1.06 EUR
Mindestbestellmenge: 4
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MOT16N65HF index_128.html
MOT16N65HF
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 16A 0.47 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A
Rds On (Max) @ Id, Vgs: 55mOhm @ 8A, 10V
Power Dissipation (Max): 60W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
Produkt ist nicht verfügbar
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MOT18N50HF index_40.html
MOT18N50HF
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 500V 18A 0.27 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A
Rds On (Max) @ Id, Vgs: 32mOhm @ 9A, 10V
Power Dissipation (Max): 42W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.14 EUR
10+3.08 EUR
100+1.85 EUR
500+1.29 EUR
1000+1.1 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
MOT18N65HF index_129.html
MOT18N65HF
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 18A 0.35 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A
Rds On (Max) @ Id, Vgs: 43mOhm @ 9A, 10V
Power Dissipation (Max): 50W
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.58 EUR
10+3.35 EUR
100+2.01 EUR
500+1.41 EUR
1000+1.2 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
MOT20N50HF index_42.html
MOT20N50HF
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 500V 20A 0.19 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 24mOhm @ 10A, 10V
Power Dissipation (Max): 45W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.81 EUR
10+3.49 EUR
100+2.09 EUR
500+1.47 EUR
1000+1.25 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
MOT20N50W index_43.html
MOT20N50W
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 500V 20A 0.19 To247s
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 24mOhm @ 10A, 10V
Power Dissipation (Max): 260W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.48 EUR
10+5.09 EUR
100+3.06 EUR
600+2.14 EUR
Mindestbestellmenge: 3
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