Produkte > GUANGDONG INMARK ELECTRONICS CO., LTD. > Alle Produkte des Herstellers GUANGDONG INMARK ELECTRONICS CO., LTD. (325) > Seite 3 nach 6
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
MBR40200F | Guangdong Inmark Electronics Co., Ltd. |
Description: DIODE ARR SCHOTT 200V 40A TO-220Packaging: Tube Mounting Type: Through Hole Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 40A Supplier Device Package: TO-220F Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 0.95 V @ 20 A Current - Reverse Leakage @ Vr: 50 µA @ 200 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
MBR4060A | Guangdong Inmark Electronics Co., Ltd. |
Description: DIODE ARR SCHOTT 60V 40A TO-220Packaging: Tube Mounting Type: Through Hole Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 40A Supplier Device Package: TO-220 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 0.72 V @ 20 A Current - Reverse Leakage @ Vr: 50 µA @ 60 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
MBR4060F | Guangdong Inmark Electronics Co., Ltd. |
Description: DIODE ARR SCHOTT 60V 40A TO-220FPackaging: Tube Mounting Type: Through Hole Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 40A Supplier Device Package: TO-220F Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 0.72 V @ 20 A Current - Reverse Leakage @ Vr: 50 µA @ 60 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
MBR60100A | Guangdong Inmark Electronics Co., Ltd. |
Description: DIODE ARR SCHOTT 100V 60A TO-220Packaging: Tube Mounting Type: Through Hole Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: TO-220 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 0.87 V @ 30 A Current - Reverse Leakage @ Vr: 50 µA @ 100 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
MBR60100F | Guangdong Inmark Electronics Co., Ltd. |
Description: DIODE ARR SCHOTT 100V 60A TO-220Packaging: Tube Mounting Type: Through Hole Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: TO-220F Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 0.87 V @ 30 A Current - Reverse Leakage @ Vr: 50 µA @ 100 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
MBR60150A | Guangdong Inmark Electronics Co., Ltd. | Description: DIODE ARR SCHOTT 150V 60A TO-220 |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
MBR60150F | Guangdong Inmark Electronics Co., Ltd. | Description: DIODE ARR SCHOTT 150V 60A TO-220 |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
MBR60200A | Guangdong Inmark Electronics Co., Ltd. |
Description: DIODE ARR SCHOTT 200V 60A TO-220 |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
MBR60200F | Guangdong Inmark Electronics Co., Ltd. | Description: DIODE ARR SCHOTT 200V 60A TO-220 |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
MBR6045A | Guangdong Inmark Electronics Co., Ltd. |
Description: DIODE ARR SCHOTT 45V 60A TO-220Packaging: Tube Mounting Type: Through Hole Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: TO-220 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 0.62 V @ 30 A Current - Reverse Leakage @ Vr: 50 µA @ 45 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
MBR6045F | Guangdong Inmark Electronics Co., Ltd. |
Description: DIODE ARR SCHOTT 45V 60A TO-220F Packaging: Tube Mounting Type: Through Hole Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: TO-220F Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 0.62 V @ 30 A Current - Reverse Leakage @ Vr: 50 µA @ 45 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
MBR6060A | Guangdong Inmark Electronics Co., Ltd. |
Description: DIODE ARR SCHOTT 60V 60A TO-220 |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
MBR6060F | Guangdong Inmark Electronics Co., Ltd. |
Description: DIODE ARR SCHOTT 60V 60A TO-220F |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
MJE15032 | Guangdong Inmark Electronics Co., Ltd. |
Description: TRANS NPN 250V 8A To-220Packaging: Tube Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -40°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 5V Frequency - Transition: 30MHz Supplier Device Package: TO-220 Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 50 W |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
MJE15033 | Guangdong Inmark Electronics Co., Ltd. |
Description: TRANS PNP 250V 8A To-220Packaging: Tube Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -40°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 5V Frequency - Transition: 30MHz Supplier Device Package: TO-220 Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 50 W |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
MMBT2222A | Guangdong Inmark Electronics Co., Ltd. |
Description: TRANS NPN 40V 600MA SOT-23 |
auf Bestellung 2985 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
MMBT2907 | Guangdong Inmark Electronics Co., Ltd. |
Description: TRANS PNP 60V 600MA SOT-23 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
MMBT5401 | Guangdong Inmark Electronics Co., Ltd. |
Description: TRANS PNP 150V 600MA SOT-23 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
MMBT5551 | Guangdong Inmark Electronics Co., Ltd. |
Description: TRANS NPN 160V 600MA SOT-23 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
MOT100N03MC | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 30V 100A 3.4m To-25 Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V Power Dissipation (Max): 50W Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-251 (IPAK) Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 15 V |
auf Bestellung 4200 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
MOT100N03MD | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 30V 100A 3.4m To-25Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V Power Dissipation (Max): 75W Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 57.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
MOT100N07D | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 70V 100A 5.2m To-25 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
MOT10200D | Guangdong Inmark Electronics Co., Ltd. |
Description: DIODE ARR SCHOTT 200V 10A TO-252 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
MOT10N65D | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 650V 10A 0.88 To252 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
MOT10N65F | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 650V 10A 0.67 To220FPackaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A Rds On (Max) @ Id, Vgs: 75mOhm @ 5A, 10V Power Dissipation (Max): 40W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
MOT10N80HF | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 800V 10A 1.4 To220FPackaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A Rds On (Max) @ Id, Vgs: 1.55Ohm @ 5A, 10V Power Dissipation (Max): 60W Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220F Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V |
auf Bestellung 990 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
MOT110N03D | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 30V 110A 3.5m To-25 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
MOT1112T | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 100V 400A 0.85m TollPackaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 400A Rds On (Max) @ Id, Vgs: 1.1mOhm @ 20A, 10V Power Dissipation (Max): 347W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TOLL-8L Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 208 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15793 pF @ 20 V |
auf Bestellung 1980 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
MOT1113T | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 100V 399A 0.9m Toll-Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 399A Rds On (Max) @ Id, Vgs: 1.1mOhm @ 20A, 10V Power Dissipation (Max): 375W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TOLL-8L Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15800 pF @ 50 V |
auf Bestellung 1990 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
MOT1113T4 | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 100V 399A 1.1m ToltPackaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 399A Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V Power Dissipation (Max): 455W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TOLT Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13574 pF @ 50 V |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
MOT1115T | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 100V 373A 1.05m Toll |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
MOT1116T | Guangdong Inmark Electronics Co., Ltd. | Description: MOSFET N-CH 110V 373A m Toll-8 |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
MOT1120AT | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 100V 280A 1.25m Toll |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
MOT1120T | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 100V 280A 1.62m Toll |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
MOT1121T | Guangdong Inmark Electronics Co., Ltd. | Description: MOSFET N-CH 110V 280A 1.6m Toll- |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
MOT1124T | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 100V 246A 2.2m Toll- |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
MOT1126T | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 100V 250A 2.3m Toll- |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
MOT1127T | Guangdong Inmark Electronics Co., Ltd. | Description: MOSFET N-CH 110V 250A 2.4m Toll- |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
MOT1130T | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 100V 176A 3m Toll-8 |
auf Bestellung 1990 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
MOT1156T | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 100V 160A 4m Toll-8 |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
MOT120N03D | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 30V 120A 3m To-252 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
MOT120N10A | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 100V 120A 4.3m To-2Packaging: Tube Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Power Dissipation (Max): 130W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-251 (IPAK) Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 84.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4646 pF @ 50 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
MOT120N10D | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 100V 120A 4.3m To-2Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V Power Dissipation (Max): 150W Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4646 pF @ 50 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
MOT120N10E | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 100V 120A 4.3m To-2Packaging: Tape & Reel (TR) Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Power Dissipation (Max): 130W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 84.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
MOT12N65A | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 650V 12A 0.56 To220 |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
MOT12N65F | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 650V 12A 0.56 To220FPackaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A Rds On (Max) @ Id, Vgs: 65mOhm @ 6A, 10V Power Dissipation (Max): 42W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V |
auf Bestellung 998 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
MOT12N65T | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 650V 12A 0.62m Toll- |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
MOT12N70HF | Guangdong Inmark Electronics Co., Ltd. | Description: MOSFET N-CH 700V 12A 0.8 To220F |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
MOT12N80HSF | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 800V 12A 1.3 To220FPackaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A Rds On (Max) @ Id, Vgs: 1.3Ohm @ 6A, 10V Power Dissipation (Max): 41W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
MOT13005DA | Guangdong Inmark Electronics Co., Ltd. |
Description: TRANS NPN 700V 4A To-220 |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
MOT13005DF | Guangdong Inmark Electronics Co., Ltd. | Description: TRANS NPN 700V 4A To-220F |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
MOT13007MA | Guangdong Inmark Electronics Co., Ltd. |
Description: TRANS NPN 700V 8A To-220Packaging: Tube Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 1A, 5A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V Frequency - Transition: 14MHz Supplier Device Package: TO-220 Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 80 W |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
MOT13007MF | Guangdong Inmark Electronics Co., Ltd. |
Description: TRANS NPN 700V 8A To-220FPackaging: Tube Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 1A, 5A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V Frequency - Transition: 14MHz Supplier Device Package: TO-220FP Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 36 W |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
MOT13009DA | Guangdong Inmark Electronics Co., Ltd. |
Description: TRANS NPN 700V 12A To-220 |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
MOT13009DF | Guangdong Inmark Electronics Co., Ltd. | Description: TRANS NPN 700V 12A To-220F |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
MOT13009DW | Guangdong Inmark Electronics Co., Ltd. |
Description: TRANS NPN 700V 12A To-247SPackaging: Tube Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -40°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 3A, 12A Current - Collector Cutoff (Max): 1mA Frequency - Transition: 4MHz Supplier Device Package: TO-247S Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 80 W |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
MOT130N03D | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 30V 130A 2.3m To-25Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 130A Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V Power Dissipation (Max): 88W Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 12 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
MOT13N50A | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 500V 13A 0.39 To220FPackaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A Rds On (Max) @ Id, Vgs: 45mOhm @ 6.5A, 10V Power Dissipation (Max): 130W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
MOT13N50HF | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 500V 13A 0.39 To220FPackaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A Rds On (Max) @ Id, Vgs: 45mOhm @ 6.5A, 10V Power Dissipation (Max): 39W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
MOT13N50SF | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 500V 13A 0.51 To220F Packaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A Rds On (Max) @ Id, Vgs: 55mOhm @ 6.5A, 10V Power Dissipation (Max): 48W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V |
auf Bestellung 990 Stücke: Lieferzeit 10-14 Tag (e) |
|
| MBR40200F |
![]() |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 200V 40A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 0.95 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Description: DIODE ARR SCHOTT 200V 40A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 0.95 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 49.67 EUR |
| 10+ | 6.89 EUR |
| 100+ | 1.84 EUR |
| 500+ | 1.06 EUR |
| 1000+ | 0.87 EUR |
| MBR4060A |
![]() |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 60V 40A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 0.72 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Description: DIODE ARR SCHOTT 60V 40A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 0.72 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.61 EUR |
| 10+ | 2.17 EUR |
| 100+ | 1.3 EUR |
| 500+ | 0.9 EUR |
| 1000+ | 0.77 EUR |
| MBR4060F |
![]() |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 60V 40A TO-220F
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 0.72 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Description: DIODE ARR SCHOTT 60V 40A TO-220F
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 0.72 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.36 EUR |
| 11+ | 2.01 EUR |
| 100+ | 1.2 EUR |
| 500+ | 0.84 EUR |
| 1000+ | 0.71 EUR |
| MBR60100A |
![]() |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 100V 60A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 0.87 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Description: DIODE ARR SCHOTT 100V 60A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 0.87 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 50.74 EUR |
| 10+ | 7.52 EUR |
| 100+ | 2.21 EUR |
| 500+ | 1.32 EUR |
| 1000+ | 1.09 EUR |
| MBR60100F |
![]() |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 100V 60A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 0.87 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Description: DIODE ARR SCHOTT 100V 60A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 0.87 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 50.44 EUR |
| 10+ | 7.35 EUR |
| 100+ | 2.12 EUR |
| 500+ | 1.26 EUR |
| 1000+ | 1.04 EUR |
| MBR60150A |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 150V 60A TO-220
Description: DIODE ARR SCHOTT 150V 60A TO-220
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 50.78 EUR |
| 10+ | 7.54 EUR |
| 100+ | 2.24 EUR |
| 500+ | 1.33 EUR |
| 1000+ | 1.11 EUR |
| MBR60150F |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 150V 60A TO-220
Description: DIODE ARR SCHOTT 150V 60A TO-220
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 50.44 EUR |
| 10+ | 7.35 EUR |
| 100+ | 2.12 EUR |
| 500+ | 1.26 EUR |
| 1000+ | 1.04 EUR |
| MBR60200A |
![]() |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 200V 60A TO-220
Description: DIODE ARR SCHOTT 200V 60A TO-220
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 50.88 EUR |
| 10+ | 7.62 EUR |
| 100+ | 2.27 EUR |
| 500+ | 1.37 EUR |
| 1000+ | 1.13 EUR |
| MBR60200F |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 200V 60A TO-220
Description: DIODE ARR SCHOTT 200V 60A TO-220
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 50.68 EUR |
| 10+ | 7.49 EUR |
| 100+ | 2.2 EUR |
| 500+ | 1.31 EUR |
| 1000+ | 1.08 EUR |
| MBR6045A |
![]() |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 45V 60A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 0.62 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Description: DIODE ARR SCHOTT 45V 60A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 0.62 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 50.72 EUR |
| 10+ | 7.52 EUR |
| 100+ | 2.21 EUR |
| 500+ | 1.32 EUR |
| 1000+ | 1.09 EUR |
| MBR6045F |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 45V 60A TO-220F
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 0.62 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Description: DIODE ARR SCHOTT 45V 60A TO-220F
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 0.62 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 50.5 EUR |
| 10+ | 7.39 EUR |
| 100+ | 2.14 EUR |
| 500+ | 1.27 EUR |
| 1000+ | 1.05 EUR |
| MBR6060A |
![]() |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 60V 60A TO-220
Description: DIODE ARR SCHOTT 60V 60A TO-220
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 50.74 EUR |
| 10+ | 7.52 EUR |
| 100+ | 2.21 EUR |
| 500+ | 1.32 EUR |
| 1000+ | 1.09 EUR |
| MBR6060F |
![]() |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 60V 60A TO-220F
Description: DIODE ARR SCHOTT 60V 60A TO-220F
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 50.44 EUR |
| 10+ | 7.35 EUR |
| 100+ | 2.12 EUR |
| 500+ | 1.26 EUR |
| 1000+ | 1.04 EUR |
| MJE15032 |
![]() |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS NPN 250V 8A To-220
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -40°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 50 W
Description: TRANS NPN 250V 8A To-220
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -40°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 50 W
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 49.36 EUR |
| 10+ | 6.69 EUR |
| 100+ | 1.73 EUR |
| 500+ | 0.98 EUR |
| 1000+ | 0.8 EUR |
| MJE15033 |
![]() |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS PNP 250V 8A To-220
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -40°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 50 W
Description: TRANS PNP 250V 8A To-220
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -40°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 50 W
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.39 EUR |
| 11+ | 2.02 EUR |
| 100+ | 1.21 EUR |
| 500+ | 0.86 EUR |
| 1000+ | 0.73 EUR |
| MMBT2222A |
![]() |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS NPN 40V 600MA SOT-23
Description: TRANS NPN 40V 600MA SOT-23
auf Bestellung 2985 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 167+ | 45.97 EUR |
| 278+ | 4.66 EUR |
| 474+ | 0.5 EUR |
| 677+ | 0.12 EUR |
| 1000+ | 0.073 EUR |
| MMBT2907 |
![]() |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS PNP 60V 600MA SOT-23
Description: TRANS PNP 60V 600MA SOT-23
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 167+ | 45.97 EUR |
| 278+ | 4.66 EUR |
| 474+ | 0.5 EUR |
| 677+ | 0.12 EUR |
| 1000+ | 0.073 EUR |
| 3000+ | 0.038 EUR |
| MMBT5401 |
![]() |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS PNP 150V 600MA SOT-23
Description: TRANS PNP 150V 600MA SOT-23
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 200+ | 45.95 EUR |
| 323+ | 4.65 EUR |
| 538+ | 0.5 EUR |
| 767+ | 0.12 EUR |
| 1000+ | 0.069 EUR |
| 3000+ | 0.035 EUR |
| MMBT5551 |
![]() |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS NPN 160V 600MA SOT-23
Description: TRANS NPN 160V 600MA SOT-23
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 200+ | 45.95 EUR |
| 323+ | 4.65 EUR |
| 538+ | 0.5 EUR |
| 767+ | 0.12 EUR |
| 1000+ | 0.069 EUR |
| 3000+ | 0.035 EUR |
| MOT100N03MC |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 30V 100A 3.4m To-25
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 50W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 15 V
Description: MOSFET N-CH 30V 100A 3.4m To-25
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 50W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 15 V
auf Bestellung 4200 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15+ | 47.3 EUR |
| 24+ | 5.46 EUR |
| 100+ | 0.99 EUR |
| 500+ | 0.46 EUR |
| 1000+ | 0.36 EUR |
| 4200+ | 0.27 EUR |
| MOT100N03MD |
![]() |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 30V 100A 3.4m To-25
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V
Power Dissipation (Max): 75W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 57.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
Description: MOSFET N-CH 30V 100A 3.4m To-25
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V
Power Dissipation (Max): 75W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 57.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 22+ | 46.8 EUR |
| 27+ | 5.38 EUR |
| 100+ | 0.93 EUR |
| 500+ | 0.43 EUR |
| 1000+ | 0.32 EUR |
| 2500+ | 0.26 EUR |
| MOT100N07D |
![]() |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 70V 100A 5.2m To-25
Description: MOSFET N-CH 70V 100A 5.2m To-25
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 1.95 EUR |
| 18+ | 1.17 EUR |
| 100+ | 0.7 EUR |
| 500+ | 0.49 EUR |
| 1000+ | 0.42 EUR |
| 2500+ | 0.36 EUR |
| MOT10200D |
![]() |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 200V 10A TO-252
Description: DIODE ARR SCHOTT 200V 10A TO-252
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 16+ | 47.16 EUR |
| 27+ | 5.38 EUR |
| 100+ | 0.94 EUR |
| 500+ | 0.43 EUR |
| 1000+ | 0.33 EUR |
| 2500+ | 0.26 EUR |
| MOT10N65D |
![]() |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 10A 0.88 To252
Description: MOSFET N-CH 650V 10A 0.88 To252
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 49.81 EUR |
| 10+ | 6.97 EUR |
| 100+ | 1.89 EUR |
| 500+ | 1.09 EUR |
| 1000+ | 0.9 EUR |
| 2500+ | 0.74 EUR |
| MOT10N65F |
![]() |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 10A 0.67 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A
Rds On (Max) @ Id, Vgs: 75mOhm @ 5A, 10V
Power Dissipation (Max): 40W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Description: MOSFET N-CH 650V 10A 0.67 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A
Rds On (Max) @ Id, Vgs: 75mOhm @ 5A, 10V
Power Dissipation (Max): 40W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 50.09 EUR |
| 10+ | 7.13 EUR |
| 100+ | 1.99 EUR |
| 500+ | 1.17 EUR |
| 1000+ | 0.95 EUR |
| MOT10N80HF |
![]() |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 800V 10A 1.4 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A
Rds On (Max) @ Id, Vgs: 1.55Ohm @ 5A, 10V
Power Dissipation (Max): 60W
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Description: MOSFET N-CH 800V 10A 1.4 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A
Rds On (Max) @ Id, Vgs: 1.55Ohm @ 5A, 10V
Power Dissipation (Max): 60W
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 55.41 EUR |
| 10+ | 10.32 EUR |
| 100+ | 3.9 EUR |
| 500+ | 2.5 EUR |
| MOT110N03D |
![]() |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 30V 110A 3.5m To-25
Description: MOSFET N-CH 30V 110A 3.5m To-25
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14+ | 1.55 EUR |
| 23+ | 0.92 EUR |
| 100+ | 0.56 EUR |
| 500+ | 0.39 EUR |
| 1000+ | 0.33 EUR |
| 2500+ | 0.29 EUR |
| MOT1112T |
![]() |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 100V 400A 0.85m Toll
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400A
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 20A, 10V
Power Dissipation (Max): 347W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TOLL-8L
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 208 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15793 pF @ 20 V
Description: MOSFET N-CH 100V 400A 0.85m Toll
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400A
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 20A, 10V
Power Dissipation (Max): 347W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TOLL-8L
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 208 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15793 pF @ 20 V
auf Bestellung 1980 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 66.32 EUR |
| 10+ | 16.87 EUR |
| 100+ | 7.83 EUR |
| 500+ | 5.26 EUR |
| 1000+ | 4.44 EUR |
| MOT1113T |
![]() |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 100V 399A 0.9m Toll-
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 399A
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 20A, 10V
Power Dissipation (Max): 375W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TOLL-8L
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15800 pF @ 50 V
Description: MOSFET N-CH 100V 399A 0.9m Toll-
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 399A
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 20A, 10V
Power Dissipation (Max): 375W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TOLL-8L
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15800 pF @ 50 V
auf Bestellung 1990 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 60.55 EUR |
| 10+ | 13.41 EUR |
| 100+ | 5.76 EUR |
| 500+ | 3.8 EUR |
| 1000+ | 3.2 EUR |
| MOT1113T4 |
![]() |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 100V 399A 1.1m Tolt
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 399A
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Power Dissipation (Max): 455W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TOLT
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13574 pF @ 50 V
Description: MOSFET N-CH 100V 399A 1.1m Tolt
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 399A
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Power Dissipation (Max): 455W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TOLT
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13574 pF @ 50 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 63.89 EUR |
| 10+ | 15.42 EUR |
| 100+ | 6.96 EUR |
| 500+ | 4.64 EUR |
| 1000+ | 3.92 EUR |
| 2000+ | 3.31 EUR |
| MOT1115T |
![]() |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 100V 373A 1.05m Toll
Description: MOSFET N-CH 100V 373A 1.05m Toll
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 58.98 EUR |
| 10+ | 12.46 EUR |
| 100+ | 5.19 EUR |
| 500+ | 3.4 EUR |
| 1000+ | 2.86 EUR |
| 2000+ | 2.42 EUR |
| MOT1116T |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 110V 373A m Toll-8
Description: MOSFET N-CH 110V 373A m Toll-8
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 61.59 EUR |
| 10+ | 14.04 EUR |
| 100+ | 6.13 EUR |
| 500+ | 4.06 EUR |
| 1000+ | 3.43 EUR |
| 2000+ | 2.89 EUR |
| MOT1120AT |
![]() |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 100V 280A 1.25m Toll
Description: MOSFET N-CH 100V 280A 1.25m Toll
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 57.41 EUR |
| 10+ | 11.52 EUR |
| 100+ | 4.62 EUR |
| 500+ | 3 EUR |
| 1000+ | 2.52 EUR |
| 2000+ | 2.13 EUR |
| MOT1120T |
![]() |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 100V 280A 1.62m Toll
Description: MOSFET N-CH 100V 280A 1.62m Toll
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 57.93 EUR |
| 10+ | 11.84 EUR |
| 100+ | 4.81 EUR |
| 500+ | 3.14 EUR |
| 1000+ | 2.63 EUR |
| 2000+ | 2.23 EUR |
| MOT1121T |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 110V 280A 1.6m Toll-
Description: MOSFET N-CH 110V 280A 1.6m Toll-
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 59.5 EUR |
| 10+ | 12.78 EUR |
| 100+ | 5.38 EUR |
| 500+ | 3.53 EUR |
| 1000+ | 2.98 EUR |
| 2000+ | 2.51 EUR |
| MOT1124T |
![]() |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 100V 246A 2.2m Toll-
Description: MOSFET N-CH 100V 246A 2.2m Toll-
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 66.87 EUR |
| 10+ | 17.2 EUR |
| 100+ | 8.02 EUR |
| 500+ | 5.39 EUR |
| 1000+ | 4.55 EUR |
| 2000+ | 3.84 EUR |
| MOT1126T |
![]() |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 100V 250A 2.3m Toll-
Description: MOSFET N-CH 100V 250A 2.3m Toll-
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 54.24 EUR |
| 10+ | 9.63 EUR |
| 100+ | 3.49 EUR |
| 500+ | 2.21 EUR |
| 1000+ | 1.84 EUR |
| 2000+ | 1.56 EUR |
| MOT1127T |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 110V 250A 2.4m Toll-
Description: MOSFET N-CH 110V 250A 2.4m Toll-
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 55.29 EUR |
| 10+ | 10.26 EUR |
| 100+ | 3.87 EUR |
| 500+ | 2.48 EUR |
| 1000+ | 2.07 EUR |
| 2000+ | 1.75 EUR |
| MOT1130T |
![]() |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 100V 176A 3m Toll-8
Description: MOSFET N-CH 100V 176A 3m Toll-8
auf Bestellung 1990 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 52.94 EUR |
| 10+ | 8.84 EUR |
| 100+ | 3.01 EUR |
| 500+ | 1.88 EUR |
| 1000+ | 1.57 EUR |
| MOT1156T |
![]() |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 100V 160A 4m Toll-8
Description: MOSFET N-CH 100V 160A 4m Toll-8
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 50.58 EUR |
| 10+ | 7.43 EUR |
| 100+ | 2.17 EUR |
| 500+ | 1.29 EUR |
| 1000+ | 1.06 EUR |
| 2000+ | 0.88 EUR |
| MOT120N03D |
![]() |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 30V 120A 3m To-252
Description: MOSFET N-CH 30V 120A 3m To-252
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 1.84 EUR |
| 19+ | 1.11 EUR |
| 100+ | 0.67 EUR |
| 500+ | 0.46 EUR |
| 1000+ | 0.39 EUR |
| 2500+ | 0.33 EUR |
| MOT120N10A |
![]() |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 100V 120A 4.3m To-2
Packaging: Tube
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 130W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 84.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4646 pF @ 50 V
Description: MOSFET N-CH 100V 120A 4.3m To-2
Packaging: Tube
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 130W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 84.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4646 pF @ 50 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.55 EUR |
| 10+ | 3.33 EUR |
| 100+ | 2 EUR |
| 500+ | 1.4 EUR |
| 1000+ | 1.19 EUR |
| MOT120N10D |
![]() |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 100V 120A 4.3m To-2
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V
Power Dissipation (Max): 150W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4646 pF @ 50 V
Description: MOSFET N-CH 100V 120A 4.3m To-2
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V
Power Dissipation (Max): 150W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4646 pF @ 50 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.07 EUR |
| 10+ | 3.64 EUR |
| 100+ | 2.18 EUR |
| 500+ | 1.52 EUR |
| 1000+ | 1.3 EUR |
| 2500+ | 1.11 EUR |
| MOT120N10E |
![]() |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 100V 120A 4.3m To-2
Packaging: Tape & Reel (TR)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 130W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 84.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
Description: MOSFET N-CH 100V 120A 4.3m To-2
Packaging: Tape & Reel (TR)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 130W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 84.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 11.13 EUR |
| 10+ | 6.66 EUR |
| 100+ | 4 EUR |
| 500+ | 2.8 EUR |
| 800+ | 2.38 EUR |
| MOT12N65A |
![]() |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 12A 0.56 To220
Description: MOSFET N-CH 650V 12A 0.56 To220
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 51.41 EUR |
| 10+ | 7.93 EUR |
| 100+ | 2.46 EUR |
| 500+ | 1.5 EUR |
| 1000+ | 1.24 EUR |
| MOT12N65F |
![]() |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 12A 0.56 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A
Rds On (Max) @ Id, Vgs: 65mOhm @ 6A, 10V
Power Dissipation (Max): 42W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Description: MOSFET N-CH 650V 12A 0.56 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A
Rds On (Max) @ Id, Vgs: 65mOhm @ 6A, 10V
Power Dissipation (Max): 42W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
auf Bestellung 998 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 50.3 EUR |
| 10+ | 7.26 EUR |
| 100+ | 2.07 EUR |
| 500+ | 1.21 EUR |
| MOT12N65T |
![]() |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 12A 0.62m Toll-
Description: MOSFET N-CH 650V 12A 0.62m Toll-
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 60.71 EUR |
| 10+ | 13.51 EUR |
| 100+ | 5.81 EUR |
| 500+ | 3.84 EUR |
| 1000+ | 3.24 EUR |
| 2000+ | 2.73 EUR |
| MOT12N70HF |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 700V 12A 0.8 To220F
Description: MOSFET N-CH 700V 12A 0.8 To220F
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.63 EUR |
| 10+ | 3.38 EUR |
| 100+ | 2.02 EUR |
| 500+ | 1.42 EUR |
| 1000+ | 1.2 EUR |
| MOT12N80HSF |
![]() |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 800V 12A 1.3 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 6A, 10V
Power Dissipation (Max): 41W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Description: MOSFET N-CH 800V 12A 1.3 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 6A, 10V
Power Dissipation (Max): 41W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 56.14 EUR |
| 10+ | 10.77 EUR |
| 100+ | 4.16 EUR |
| 500+ | 2.69 EUR |
| 1000+ | 2.25 EUR |
| MOT13005DA |
![]() |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS NPN 700V 4A To-220
Description: TRANS NPN 700V 4A To-220
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 48.5 EUR |
| 14+ | 6.18 EUR |
| 100+ | 1.42 EUR |
| 500+ | 0.76 EUR |
| 1000+ | 0.62 EUR |
| MOT13005DF |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS NPN 700V 4A To-220F
Description: TRANS NPN 700V 4A To-220F
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 48.33 EUR |
| 14+ | 6.08 EUR |
| 100+ | 1.36 EUR |
| 500+ | 0.73 EUR |
| 1000+ | 0.58 EUR |
| MOT13007MA |
![]() |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS NPN 700V 8A To-220
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 1A, 5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V
Frequency - Transition: 14MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 80 W
Description: TRANS NPN 700V 8A To-220
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 1A, 5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V
Frequency - Transition: 14MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 80 W
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 48.75 EUR |
| 12+ | 6.34 EUR |
| 100+ | 1.51 EUR |
| 500+ | 0.83 EUR |
| 1000+ | 0.67 EUR |
| MOT13007MF |
![]() |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS NPN 700V 8A To-220F
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 1A, 5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V
Frequency - Transition: 14MHz
Supplier Device Package: TO-220FP
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 36 W
Description: TRANS NPN 700V 8A To-220F
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 1A, 5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V
Frequency - Transition: 14MHz
Supplier Device Package: TO-220FP
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 36 W
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 48.41 EUR |
| 14+ | 6.13 EUR |
| 100+ | 1.38 EUR |
| 500+ | 0.74 EUR |
| 1000+ | 0.6 EUR |
| MOT13009DA |
![]() |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS NPN 700V 12A To-220
Description: TRANS NPN 700V 12A To-220
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 48.93 EUR |
| 12+ | 6.44 EUR |
| 100+ | 1.57 EUR |
| 500+ | 0.87 EUR |
| 1000+ | 0.71 EUR |
| MOT13009DF |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS NPN 700V 12A To-220F
Description: TRANS NPN 700V 12A To-220F
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 48.67 EUR |
| 13+ | 6.28 EUR |
| 100+ | 1.48 EUR |
| 500+ | 0.81 EUR |
| 1000+ | 0.65 EUR |
| MOT13009DW |
![]() |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS NPN 700V 12A To-247S
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -40°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 3A, 12A
Current - Collector Cutoff (Max): 1mA
Frequency - Transition: 4MHz
Supplier Device Package: TO-247S
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 80 W
Description: TRANS NPN 700V 12A To-247S
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -40°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 3A, 12A
Current - Collector Cutoff (Max): 1mA
Frequency - Transition: 4MHz
Supplier Device Package: TO-247S
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 80 W
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 50.13 EUR |
| 10+ | 7.16 EUR |
| 100+ | 2.01 EUR |
| 500+ | 1.18 EUR |
| 1000+ | 0.96 EUR |
| 3000+ | 0.8 EUR |
| MOT130N03D |
![]() |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 30V 130A 2.3m To-25
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 88W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 12 V
Description: MOSFET N-CH 30V 130A 2.3m To-25
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 88W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 12 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 1.8 EUR |
| 20+ | 1.08 EUR |
| 100+ | 0.65 EUR |
| 500+ | 0.45 EUR |
| 1000+ | 0.38 EUR |
| 2500+ | 0.33 EUR |
| MOT13N50A |
![]() |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 500V 13A 0.39 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A
Rds On (Max) @ Id, Vgs: 45mOhm @ 6.5A, 10V
Power Dissipation (Max): 130W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Description: MOSFET N-CH 500V 13A 0.39 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A
Rds On (Max) @ Id, Vgs: 45mOhm @ 6.5A, 10V
Power Dissipation (Max): 130W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 51.41 EUR |
| 10+ | 7.93 EUR |
| 100+ | 2.46 EUR |
| 500+ | 1.5 EUR |
| 1000+ | 1.24 EUR |
| MOT13N50HF |
![]() |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 500V 13A 0.39 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A
Rds On (Max) @ Id, Vgs: 45mOhm @ 6.5A, 10V
Power Dissipation (Max): 39W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Description: MOSFET N-CH 500V 13A 0.39 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A
Rds On (Max) @ Id, Vgs: 45mOhm @ 6.5A, 10V
Power Dissipation (Max): 39W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 51.41 EUR |
| 10+ | 7.93 EUR |
| 100+ | 2.46 EUR |
| 500+ | 1.5 EUR |
| 1000+ | 1.24 EUR |
| MOT13N50SF |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 500V 13A 0.51 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A
Rds On (Max) @ Id, Vgs: 55mOhm @ 6.5A, 10V
Power Dissipation (Max): 48W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Description: MOSFET N-CH 500V 13A 0.51 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A
Rds On (Max) @ Id, Vgs: 55mOhm @ 6.5A, 10V
Power Dissipation (Max): 48W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 49.75 EUR |
| 10+ | 6.94 EUR |
| 100+ | 1.87 EUR |
| 500+ | 1.08 EUR |










