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MBR6045A MBR6045A Guangdong Inmark Electronics Co., Ltd. index_12.html Description: DIODE ARR SCHOTT 45V 60A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 0.62 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.82 EUR
10+2.89 EUR
100+1.74 EUR
500+1.21 EUR
1000+1.04 EUR
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MBR6045F Guangdong Inmark Electronics Co., Ltd. Description: DIODE ARR SCHOTT 45V 60A TO-220F
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 0.62 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.58 EUR
10+2.76 EUR
100+1.65 EUR
500+1.17 EUR
1000+0.99 EUR
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MBR6060A MBR6060A Guangdong Inmark Electronics Co., Ltd. index_17.html Description: DIODE ARR SCHOTT 60V 60A TO-220
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.88 EUR
10+2.92 EUR
100+1.75 EUR
500+1.23 EUR
1000+1.05 EUR
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MBR6060F MBR6060F Guangdong Inmark Electronics Co., Ltd. index_19.html Description: DIODE ARR SCHOTT 60V 60A TO-220F
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.58 EUR
10+2.76 EUR
100+1.65 EUR
500+1.17 EUR
1000+0.99 EUR
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MJE15032 MJE15032 Guangdong Inmark Electronics Co., Ltd. audiotube_28.html Description: TRANS NPN 250V 8A To-220
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -40°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 50 W
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.45 EUR
11+2.07 EUR
100+1.24 EUR
500+0.87 EUR
1000+0.74 EUR
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MJE15033 MJE15033 Guangdong Inmark Electronics Co., Ltd. audiotube_27.html Description: TRANS PNP 250V 8A To-220
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -40°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 50 W
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.39 EUR
11+2.02 EUR
100+1.21 EUR
500+0.86 EUR
1000+0.73 EUR
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MMBT2907 Guangdong Inmark Electronics Co., Ltd. 5399_MMBT2907%20SOT-23.PDF MMBT2907A_PN2907A_PZT2907A.pdf Description: TRANS PNP 60V 600MA SOT-23
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
167+0.13 EUR
295+0.071 EUR
491+0.043 EUR
703+0.03 EUR
1000+0.025 EUR
3000+0.021 EUR
Mindestbestellmenge: 167 Stücke
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MMBT5551 MMBT5551 Guangdong Inmark Electronics Co., Ltd. smallsignaltransistor_3.html Description: TRANS NPN 160V 600MA SOT-23
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
200+0.1 EUR
334+0.063 EUR
556+0.038 EUR
795+0.026 EUR
1000+0.023 EUR
3000+0.019 EUR
Mindestbestellmenge: 200 Stücke
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MOT100N03MC MOT100N03MC Guangdong Inmark Electronics Co., Ltd. Description: MOSFET N-CH 30V 100A 3.4m To-25
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 50W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 15 V
auf Bestellung 4200 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.43 EUR
25+0.86 EUR
100+0.51 EUR
500+0.36 EUR
1000+0.31 EUR
4200+0.26 EUR
Mindestbestellmenge: 15 Stücke
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MOT100N03MD MOT100N03MD Guangdong Inmark Electronics Co., Ltd. trenchsgtmOS_762.html Description: MOSFET N-CH 30V 100A 3.4m To-25
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V
Power Dissipation (Max): 75W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 57.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.94 EUR
28+0.77 EUR
100+0.46 EUR
500+0.32 EUR
1000+0.27 EUR
2500+0.24 EUR
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MOT10N65D MOT10N65D Guangdong Inmark Electronics Co., Ltd. index_122.html Description: MOSFET N-CH 650V 10A 0.88 To252
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.83 EUR
10+2.31 EUR
100+1.38 EUR
500+0.96 EUR
1000+0.82 EUR
2500+0.7 EUR
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MOT10N65F MOT10N65F Guangdong Inmark Electronics Co., Ltd. index_119.html Description: MOSFET N-CH 650V 10A 0.67 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A
Rds On (Max) @ Id, Vgs: 75mOhm @ 5A, 10V
Power Dissipation (Max): 40W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
6+4.11 EUR
10+2.46 EUR
100+1.48 EUR
500+1.04 EUR
1000+0.88 EUR
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MOT10N80HF MOT10N80HF Guangdong Inmark Electronics Co., Ltd. index_160.html Description: MOSFET N-CH 800V 10A 1.4 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A
Rds On (Max) @ Id, Vgs: 1.55Ohm @ 5A, 10V
Power Dissipation (Max): 60W
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)
3+9.26 EUR
10+5.56 EUR
100+3.33 EUR
500+2.33 EUR
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MOT110N03D MOT110N03D Guangdong Inmark Electronics Co., Ltd. trenchsgtmOS_756.html Description: MOSFET N-CH 30V 110A 3.5m To-25
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.55 EUR
23+0.92 EUR
100+0.56 EUR
500+0.39 EUR
1000+0.33 EUR
2500+0.29 EUR
Mindestbestellmenge: 14 Stücke
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MOT1112T MOT1112T Guangdong Inmark Electronics Co., Ltd. mediumsgt_912.html Description: MOSFET N-CH 100V 400A 0.85m Toll
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400A
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 20A, 10V
Power Dissipation (Max): 347W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TOLL-8L
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 208 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15793 pF @ 20 V
auf Bestellung 1980 Stücke:
Lieferzeit 10-14 Tag (e)
2+19.84 EUR
10+11.9 EUR
100+7.14 EUR
500+5 EUR
1000+4.25 EUR
Mindestbestellmenge: 2 Stücke
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MOT1113T MOT1113T Guangdong Inmark Electronics Co., Ltd. mediumsgt_19.html Description: MOSFET N-CH 100V 399A 0.9m Toll-
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 399A
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 20A, 10V
Power Dissipation (Max): 375W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TOLL-8L
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15800 pF @ 50 V
auf Bestellung 1990 Stücke:
Lieferzeit 10-14 Tag (e)
2+14.24 EUR
10+8.54 EUR
100+5.13 EUR
500+3.59 EUR
1000+3.05 EUR
Mindestbestellmenge: 2 Stücke
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MOT1113T4 MOT1113T4 Guangdong Inmark Electronics Co., Ltd. mediumsgt_870.html Description: MOSFET N-CH 100V 399A 1.1m Tolt
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 399A
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Power Dissipation (Max): 455W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TOLT
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13574 pF @ 50 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
2+17.78 EUR
10+10.67 EUR
100+6.4 EUR
500+4.49 EUR
1000+3.81 EUR
2000+3.24 EUR
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MOT120N10A MOT120N10A Guangdong Inmark Electronics Co., Ltd. trenchsgtmOS_753.html Description: MOSFET N-CH 100V 120A 4.3m To-2
Packaging: Tube
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 130W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 84.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4646 pF @ 50 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.55 EUR
10+3.33 EUR
100+2 EUR
500+1.4 EUR
1000+1.19 EUR
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MOT120N10D MOT120N10D Guangdong Inmark Electronics Co., Ltd. trenchsgtmOS_750.html Description: MOSFET N-CH 100V 120A 4.3m To-2
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V
Power Dissipation (Max): 150W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4646 pF @ 50 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.07 EUR
10+3.64 EUR
100+2.18 EUR
500+1.52 EUR
1000+1.3 EUR
2500+1.11 EUR
Mindestbestellmenge: 4 Stücke
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MOT120N10E MOT120N10E Guangdong Inmark Electronics Co., Ltd. trenchsgtmOS_752.html Description: MOSFET N-CH 100V 120A 4.3m To-2
Packaging: Tape & Reel (TR)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 130W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 84.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.13 EUR
10+6.66 EUR
100+4 EUR
500+2.8 EUR
800+2.38 EUR
Mindestbestellmenge: 2 Stücke
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MOT12N65A MOT12N65A Guangdong Inmark Electronics Co., Ltd. index_123.html Description: MOSFET N-CH 650V 12A 0.56 To220
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A
Rds On (Max) @ Id, Vgs: 65mOhm @ 6A, 10V
Power Dissipation (Max): 145W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.49 EUR
10+3.3 EUR
100+1.98 EUR
500+1.38 EUR
1000+1.18 EUR
Mindestbestellmenge: 4 Stücke
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MOT12N65F MOT12N65F Guangdong Inmark Electronics Co., Ltd. index_124.html Description: MOSFET N-CH 650V 12A 0.56 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A
Rds On (Max) @ Id, Vgs: 65mOhm @ 6A, 10V
Power Dissipation (Max): 42W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
auf Bestellung 998 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.4 EUR
10+2.64 EUR
100+1.58 EUR
500+1.11 EUR
Mindestbestellmenge: 5 Stücke
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MOT12N65T MOT12N65T Guangdong Inmark Electronics Co., Ltd. mediumsgt_901.html Description: MOSFET N-CH 650V 12A 0.62m Toll-
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A
Rds On (Max) @ Id, Vgs: 72mOhm @ 6A, 10V
Power Dissipation (Max): 208W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TOLL-8L
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
2+14.66 EUR
10+8.79 EUR
100+5.27 EUR
500+3.69 EUR
1000+3.14 EUR
2000+2.67 EUR
Mindestbestellmenge: 2 Stücke
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MOT12N80HSF MOT12N80HSF Guangdong Inmark Electronics Co., Ltd. MOT12N80HSF.pdf Description: MOSFET N-CH 800V 12A 1.3 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 6A, 10V
Power Dissipation (Max): 41W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
3+9.87 EUR
10+5.93 EUR
100+3.55 EUR
500+2.49 EUR
1000+2.12 EUR
Mindestbestellmenge: 3 Stücke
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MOT13005DA MOT13005DA Guangdong Inmark Electronics Co., Ltd. index_1.html Description: TRANS NPN 700V 4A To-220
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.56 EUR
14+1.54 EUR
100+0.92 EUR
500+0.64 EUR
1000+0.55 EUR
Mindestbestellmenge: 9 Stücke
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MOT13005DF Guangdong Inmark Electronics Co., Ltd. Description: TRANS NPN 700V 4A To-220F
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.4 EUR
15+1.44 EUR
100+0.87 EUR
500+0.61 EUR
1000+0.51 EUR
Mindestbestellmenge: 9 Stücke
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MOT13007MA MOT13007MA Guangdong Inmark Electronics Co., Ltd. index_6.html Description: TRANS NPN 700V 8A To-220
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 1A, 5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V
Frequency - Transition: 14MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 80 W
Produkt ist nicht verfügbar
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MOT13007MF MOT13007MF Guangdong Inmark Electronics Co., Ltd. index_8.html Description: TRANS NPN 700V 8A To-220F
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 1A, 5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V
Frequency - Transition: 14MHz
Supplier Device Package: TO-220FP
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 36 W
Produkt ist nicht verfügbar
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MOT13009DA MOT13009DA Guangdong Inmark Electronics Co., Ltd. index_11.html Description: TRANS NPN 700V 12A To-220
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.09 EUR
12+1.86 EUR
100+1.12 EUR
500+0.79 EUR
1000+0.67 EUR
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MOT13009DF Guangdong Inmark Electronics Co., Ltd. Description: TRANS NPN 700V 12A To-220F
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.83 EUR
13+1.7 EUR
100+1.02 EUR
500+0.71 EUR
1000+0.61 EUR
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MOT13009DW MOT13009DW Guangdong Inmark Electronics Co., Ltd. index_15.html Description: TRANS NPN 700V 12A To-247S
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -40°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 3A, 12A
Current - Collector Cutoff (Max): 1mA
Frequency - Transition: 4MHz
Supplier Device Package: TO-247S
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 80 W
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.3 EUR
10+2.57 EUR
100+1.55 EUR
500+1.08 EUR
1000+0.92 EUR
3000+0.79 EUR
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MOT130N03D MOT130N03D Guangdong Inmark Electronics Co., Ltd. trenchsgtmOS_744.html Description: MOSFET N-CH 30V 130A 2.3m To-25
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 88W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 12 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.8 EUR
20+1.08 EUR
100+0.65 EUR
500+0.45 EUR
1000+0.38 EUR
2500+0.33 EUR
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MOT13N50A MOT13N50A Guangdong Inmark Electronics Co., Ltd. index_29.html Description: MOSFET N-CH 500V 13A 0.39 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A
Rds On (Max) @ Id, Vgs: 45mOhm @ 6.5A, 10V
Power Dissipation (Max): 130W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.38 EUR
10+3.22 EUR
100+1.94 EUR
500+1.36 EUR
1000+1.15 EUR
Mindestbestellmenge: 4 Stücke
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MOT13N50HF MOT13N50HF Guangdong Inmark Electronics Co., Ltd. index_34.html Description: MOSFET N-CH 500V 13A 0.39 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A
Rds On (Max) @ Id, Vgs: 45mOhm @ 6.5A, 10V
Power Dissipation (Max): 39W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.38 EUR
10+3.22 EUR
100+1.94 EUR
500+1.36 EUR
1000+1.15 EUR
Mindestbestellmenge: 4 Stücke
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MOT13N50SF Guangdong Inmark Electronics Co., Ltd. Description: MOSFET N-CH 500V 13A 0.51 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A
Rds On (Max) @ Id, Vgs: 55mOhm @ 6.5A, 10V
Power Dissipation (Max): 48W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.8 EUR
10+2.27 EUR
100+1.37 EUR
500+0.95 EUR
Mindestbestellmenge: 6 Stücke
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MOT150N03A Guangdong Inmark Electronics Co., Ltd. Description: MOSFET N-CH 30V 150A 3.9m To-22
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 130W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6297 pF @ 15 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.24 EUR
10+2.55 EUR
100+1.52 EUR
500+1.07 EUR
1000+0.9 EUR
Mindestbestellmenge: 5 Stücke
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MOT150N03D MOT150N03D Guangdong Inmark Electronics Co., Ltd. trenchsgtmOS_738.html Description: MOSFET N-CH 30V 150A 1.5m To-25
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
Power Dissipation (Max): 83W
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 20 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.4 EUR
15+1.44 EUR
100+0.87 EUR
500+0.61 EUR
1000+0.51 EUR
2500+0.44 EUR
Mindestbestellmenge: 9 Stücke
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MOT150N10A MOT150N10A Guangdong Inmark Electronics Co., Ltd. Description: MOSFET N-CH 100V 150A 3.4m To-2
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.71 EUR
10+5.22 EUR
100+3.13 EUR
500+2.19 EUR
1000+1.87 EUR
Mindestbestellmenge: 3 Stücke
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MOT15N10C MOT15N10C Guangdong Inmark Electronics Co., Ltd. trenchsgtmOS_850.html Description: MOSFET N-CH 100V 15A 80m To-251
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A
Rds On (Max) @ Id, Vgs: 95mOhm @ 8A, 10V
Power Dissipation (Max): 50W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V
auf Bestellung 4200 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.26 EUR
28+0.76 EUR
100+0.45 EUR
500+0.32 EUR
1000+0.27 EUR
4200+0.23 EUR
Mindestbestellmenge: 17 Stücke
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MOT15N10D MOT15N10D Guangdong Inmark Electronics Co., Ltd. trenchsgtmOS_849.html Description: MOSFET N-CH 100V 15A 80m To-252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A
Rds On (Max) @ Id, Vgs: 95mOhm @ 8A, 10V
Power Dissipation (Max): 50W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.26 EUR
28+0.76 EUR
100+0.45 EUR
500+0.32 EUR
1000+0.27 EUR
2500+0.23 EUR
Mindestbestellmenge: 17 Stücke
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MOT15N50HF MOT15N50HF Guangdong Inmark Electronics Co., Ltd. index_36.html Description: MOSFET N-CH 500V 15A 0.4 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A
Rds On (Max) @ Id, Vgs: 400mOhm @ 7.5A, 10V
Power Dissipation (Max): 40W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.65 EUR
10+3.4 EUR
100+2.03 EUR
500+1.43 EUR
1000+1.21 EUR
Mindestbestellmenge: 4 Stücke
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MOT16N50HF Guangdong Inmark Electronics Co., Ltd. Description: MOSFET N-CH 500V 16A 0.3 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A
Rds On (Max) @ Id, Vgs: 35mOhm @ 8A, 10V
Power Dissipation (Max): 40W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.06 EUR
10+3.64 EUR
100+2.19 EUR
500+1.54 EUR
1000+1.3 EUR
Mindestbestellmenge: 4 Stücke
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MOT16N65HF MOT16N65HF Guangdong Inmark Electronics Co., Ltd. index_128.html Description: MOSFET N-CH 650V 16A 0.47 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A
Rds On (Max) @ Id, Vgs: 55mOhm @ 8A, 10V
Power Dissipation (Max): 60W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.76 EUR
10+3.45 EUR
100+2.07 EUR
500+1.45 EUR
1000+1.24 EUR
Mindestbestellmenge: 4 Stücke
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MOT180N10A Guangdong Inmark Electronics Co., Ltd. Description: MOSFET N-CH 100V 180A 3m To-220
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 260W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7470 pF @ 50 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
3+9.97 EUR
10+5.97 EUR
100+3.58 EUR
500+2.51 EUR
1000+2.13 EUR
Mindestbestellmenge: 3 Stücke
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MOT180N10E MOT180N10E Guangdong Inmark Electronics Co., Ltd. trenchsgtmOS_732.html Description: MOSFET N-CH 100V 180A 3m To-263
Packaging: Tape & Reel (TR)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 260W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7470 pF @ 50 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
1+24.13 EUR
10+14.48 EUR
100+8.69 EUR
500+6.08 EUR
800+5.16 EUR
Im Einkaufswagen  Stück im Wert von  UAH
MOT18N50HF MOT18N50HF Guangdong Inmark Electronics Co., Ltd. index_40.html Description: MOSFET N-CH 500V 18A 0.27 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A
Rds On (Max) @ Id, Vgs: 32mOhm @ 9A, 10V
Power Dissipation (Max): 42W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.34 EUR
10+3.8 EUR
100+2.28 EUR
500+1.59 EUR
1000+1.36 EUR
Mindestbestellmenge: 4 Stücke
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MOT18N65HF MOT18N65HF Guangdong Inmark Electronics Co., Ltd. index_129.html Description: MOSFET N-CH 650V 18A 0.35 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A
Rds On (Max) @ Id, Vgs: 43mOhm @ 9A, 10V
Power Dissipation (Max): 50W
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.85 EUR
10+4.12 EUR
100+2.46 EUR
500+1.73 EUR
Mindestbestellmenge: 4 Stücke
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MOT20N50HF MOT20N50HF Guangdong Inmark Electronics Co., Ltd. Description: MOSFET N-CH 500V 20A 0.19 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 24mOhm @ 10A, 10V
Power Dissipation (Max): 45W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.02 EUR
10+4.21 EUR
100+2.52 EUR
500+1.77 EUR
1000+1.5 EUR
Mindestbestellmenge: 3 Stücke
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MOT20N50W MOT20N50W Guangdong Inmark Electronics Co., Ltd. index_43.html Description: MOSFET N-CH 500V 20A 0.19 To247s
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 24mOhm @ 10A, 10V
Power Dissipation (Max): 260W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)
3+10.25 EUR
10+6.15 EUR
100+3.69 EUR
600+2.58 EUR
Mindestbestellmenge: 3 Stücke
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MOT2124G Guangdong Inmark Electronics Co., Ltd. Description: MOSFET N-CH V A m PDFN5x6
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
53+0.39 EUR
86+0.25 EUR
143+0.14 EUR
500+0.1 EUR
1000+0.087 EUR
5000+0.074 EUR
Mindestbestellmenge: 53 Stücke
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MOT2135G MOT2135G Guangdong Inmark Electronics Co., Ltd. trenchsgtmOS_705.html Description: MOSFET N-CH 20V 60A 3m PDFN5x6
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.57 EUR
23+0.94 EUR
100+0.56 EUR
500+0.39 EUR
1000+0.33 EUR
5000+0.29 EUR
Mindestbestellmenge: 14 Stücke
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MOT2135J MOT2135J Guangdong Inmark Electronics Co., Ltd. trenchsgtmOS_704.html Description: MOSFET N-CH 20V 60A 3m PDFN3x3
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.55 EUR
23+0.92 EUR
100+0.55 EUR
500+0.39 EUR
1000+0.33 EUR
5000+0.29 EUR
Mindestbestellmenge: 14 Stücke
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MOT22N65HF MOT22N65HF Guangdong Inmark Electronics Co., Ltd. index_132.html Description: MOSFET N-CH 650V 22A 0.35 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A
Rds On (Max) @ Id, Vgs: 42mOhm @ 11A, 10V
Power Dissipation (Max): 52W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
3+9.56 EUR
10+5.72 EUR
100+3.44 EUR
500+2.4 EUR
1000+2.05 EUR
Mindestbestellmenge: 3 Stücke
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MOT2305AB2 Guangdong Inmark Electronics Co., Ltd. Description: MOSFET P-CH 20V 6A SOT23
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
67+0.31 EUR
110+0.19 EUR
184+0.11 EUR
500+0.08 EUR
1000+0.068 EUR
3000+0.058 EUR
Mindestbestellmenge: 67 Stücke
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MOT2310B2 Guangdong Inmark Electronics Co., Ltd. Description: MOSFET N-CH 60V 3A SOT23
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
56+0.38 EUR
93+0.23 EUR
156+0.13 EUR
500+0.094 EUR
1000+0.081 EUR
3000+0.068 EUR
Mindestbestellmenge: 56 Stücke
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MOT2514J MOT2514J Guangdong Inmark Electronics Co., Ltd. trenchsgtmOS_677.html Description: MOSFET N-CH 20V 12A 10m PDFN3x3
auf Bestellung 5000 Stücke:
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MOT25N50N Guangdong Inmark Electronics Co., Ltd. Description: MOSFET N-CH 500V 25A 0.2 To247
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A
Rds On (Max) @ Id, Vgs: 24mOhm @ 5A, 10V
Power Dissipation (Max): 300W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V
auf Bestellung 600 Stücke:
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MOT25N50W MOT25N50W Guangdong Inmark Electronics Co., Ltd. index_209.html Description: MOSFET N-CH 500V 25A 0.21 To247s
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A
Rds On (Max) @ Id, Vgs: 24mOhm @ 12.5A, 10V
Power Dissipation (Max): 297W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 30 V
auf Bestellung 600 Stücke:
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MOT2620J MOT2620J Guangdong Inmark Electronics Co., Ltd. trenchsgtmOS_675.html Description: MOSFET N+P-CH 20V 20A 9m PDFN3x
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 13W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 704pF @ 10V
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-PDFN (3x3)
auf Bestellung 5000 Stücke:
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MOT2718J MOT2718J Guangdong Inmark Electronics Co., Ltd. trenchsgtmOS_673.html Description: MOSFET P-CH 15V 8A 16m PDFN3x3
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MBR6045A index_12.html
MBR6045A
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 45V 60A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 0.62 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
auf Bestellung 1000 Stücke:
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MBR6045F
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 45V 60A TO-220F
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 0.62 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
auf Bestellung 1000 Stücke:
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MBR6060A index_17.html
MBR6060A
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 60V 60A TO-220
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MBR6060F index_19.html
MBR6060F
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 60V 60A TO-220F
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5+4.58 EUR
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MJE15032 audiotube_28.html
MJE15032
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS NPN 250V 8A To-220
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -40°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 50 W
auf Bestellung 1000 Stücke:
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MJE15033 audiotube_27.html
MJE15033
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS PNP 250V 8A To-220
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -40°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 50 W
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MMBT2907 5399_MMBT2907%20SOT-23.PDF MMBT2907A_PN2907A_PZT2907A.pdf
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS PNP 60V 600MA SOT-23
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167+0.13 EUR
295+0.071 EUR
491+0.043 EUR
703+0.03 EUR
1000+0.025 EUR
3000+0.021 EUR
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MMBT5551 smallsignaltransistor_3.html
MMBT5551
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS NPN 160V 600MA SOT-23
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200+0.1 EUR
334+0.063 EUR
556+0.038 EUR
795+0.026 EUR
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MOT100N03MC
MOT100N03MC
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 30V 100A 3.4m To-25
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 50W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 15 V
auf Bestellung 4200 Stücke:
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15+1.43 EUR
25+0.86 EUR
100+0.51 EUR
500+0.36 EUR
1000+0.31 EUR
4200+0.26 EUR
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MOT100N03MD trenchsgtmOS_762.html
MOT100N03MD
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 30V 100A 3.4m To-25
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V
Power Dissipation (Max): 75W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 57.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
auf Bestellung 2500 Stücke:
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23+0.94 EUR
28+0.77 EUR
100+0.46 EUR
500+0.32 EUR
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MOT10N65D index_122.html
MOT10N65D
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 10A 0.88 To252
auf Bestellung 2500 Stücke:
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6+3.83 EUR
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MOT10N65F index_119.html
MOT10N65F
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 10A 0.67 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A
Rds On (Max) @ Id, Vgs: 75mOhm @ 5A, 10V
Power Dissipation (Max): 40W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
auf Bestellung 1000 Stücke:
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6+4.11 EUR
10+2.46 EUR
100+1.48 EUR
500+1.04 EUR
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MOT10N80HF index_160.html
MOT10N80HF
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 800V 10A 1.4 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A
Rds On (Max) @ Id, Vgs: 1.55Ohm @ 5A, 10V
Power Dissipation (Max): 60W
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
auf Bestellung 990 Stücke:
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3+9.26 EUR
10+5.56 EUR
100+3.33 EUR
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MOT110N03D trenchsgtmOS_756.html
MOT110N03D
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 30V 110A 3.5m To-25
auf Bestellung 2500 Stücke:
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14+1.55 EUR
23+0.92 EUR
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MOT1112T mediumsgt_912.html
MOT1112T
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 100V 400A 0.85m Toll
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400A
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 20A, 10V
Power Dissipation (Max): 347W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TOLL-8L
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 208 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15793 pF @ 20 V
auf Bestellung 1980 Stücke:
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2+19.84 EUR
10+11.9 EUR
100+7.14 EUR
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MOT1113T mediumsgt_19.html
MOT1113T
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 100V 399A 0.9m Toll-
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 399A
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 20A, 10V
Power Dissipation (Max): 375W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TOLL-8L
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15800 pF @ 50 V
auf Bestellung 1990 Stücke:
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2+14.24 EUR
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100+5.13 EUR
500+3.59 EUR
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MOT1113T4 mediumsgt_870.html
MOT1113T4
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 100V 399A 1.1m Tolt
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 399A
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Power Dissipation (Max): 455W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TOLT
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13574 pF @ 50 V
auf Bestellung 2000 Stücke:
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2+17.78 EUR
10+10.67 EUR
100+6.4 EUR
500+4.49 EUR
1000+3.81 EUR
2000+3.24 EUR
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MOT120N10A trenchsgtmOS_753.html
MOT120N10A
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 100V 120A 4.3m To-2
Packaging: Tube
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 130W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 84.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4646 pF @ 50 V
auf Bestellung 1000 Stücke:
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AnzahlPrivatkunde
4+5.55 EUR
10+3.33 EUR
100+2 EUR
500+1.4 EUR
1000+1.19 EUR
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MOT120N10D trenchsgtmOS_750.html
MOT120N10D
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 100V 120A 4.3m To-2
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V
Power Dissipation (Max): 150W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4646 pF @ 50 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.07 EUR
10+3.64 EUR
100+2.18 EUR
500+1.52 EUR
1000+1.3 EUR
2500+1.11 EUR
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MOT120N10E trenchsgtmOS_752.html
MOT120N10E
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 100V 120A 4.3m To-2
Packaging: Tape & Reel (TR)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 130W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 84.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
auf Bestellung 800 Stücke:
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AnzahlPrivatkunde
2+11.13 EUR
10+6.66 EUR
100+4 EUR
500+2.8 EUR
800+2.38 EUR
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MOT12N65A index_123.html
MOT12N65A
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 12A 0.56 To220
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A
Rds On (Max) @ Id, Vgs: 65mOhm @ 6A, 10V
Power Dissipation (Max): 145W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.49 EUR
10+3.3 EUR
100+1.98 EUR
500+1.38 EUR
1000+1.18 EUR
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MOT12N65F index_124.html
MOT12N65F
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 12A 0.56 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A
Rds On (Max) @ Id, Vgs: 65mOhm @ 6A, 10V
Power Dissipation (Max): 42W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
auf Bestellung 998 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.4 EUR
10+2.64 EUR
100+1.58 EUR
500+1.11 EUR
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MOT12N65T mediumsgt_901.html
MOT12N65T
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 12A 0.62m Toll-
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A
Rds On (Max) @ Id, Vgs: 72mOhm @ 6A, 10V
Power Dissipation (Max): 208W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TOLL-8L
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+14.66 EUR
10+8.79 EUR
100+5.27 EUR
500+3.69 EUR
1000+3.14 EUR
2000+2.67 EUR
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MOT12N80HSF MOT12N80HSF.pdf
MOT12N80HSF
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 800V 12A 1.3 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 6A, 10V
Power Dissipation (Max): 41W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.87 EUR
10+5.93 EUR
100+3.55 EUR
500+2.49 EUR
1000+2.12 EUR
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MOT13005DA index_1.html
MOT13005DA
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS NPN 700V 4A To-220
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.56 EUR
14+1.54 EUR
100+0.92 EUR
500+0.64 EUR
1000+0.55 EUR
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MOT13005DF
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS NPN 700V 4A To-220F
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.4 EUR
15+1.44 EUR
100+0.87 EUR
500+0.61 EUR
1000+0.51 EUR
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MOT13007MA index_6.html
MOT13007MA
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS NPN 700V 8A To-220
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 1A, 5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V
Frequency - Transition: 14MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 80 W
Produkt ist nicht verfügbar
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MOT13007MF index_8.html
MOT13007MF
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS NPN 700V 8A To-220F
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 1A, 5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V
Frequency - Transition: 14MHz
Supplier Device Package: TO-220FP
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 36 W
Produkt ist nicht verfügbar
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MOT13009DA index_11.html
MOT13009DA
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS NPN 700V 12A To-220
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.09 EUR
12+1.86 EUR
100+1.12 EUR
500+0.79 EUR
1000+0.67 EUR
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MOT13009DF
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS NPN 700V 12A To-220F
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.83 EUR
13+1.7 EUR
100+1.02 EUR
500+0.71 EUR
1000+0.61 EUR
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MOT13009DW index_15.html
MOT13009DW
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS NPN 700V 12A To-247S
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -40°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 3A, 12A
Current - Collector Cutoff (Max): 1mA
Frequency - Transition: 4MHz
Supplier Device Package: TO-247S
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 80 W
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.3 EUR
10+2.57 EUR
100+1.55 EUR
500+1.08 EUR
1000+0.92 EUR
3000+0.79 EUR
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MOT130N03D trenchsgtmOS_744.html
MOT130N03D
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 30V 130A 2.3m To-25
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 88W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 12 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
12+1.8 EUR
20+1.08 EUR
100+0.65 EUR
500+0.45 EUR
1000+0.38 EUR
2500+0.33 EUR
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MOT13N50A index_29.html
MOT13N50A
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 500V 13A 0.39 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A
Rds On (Max) @ Id, Vgs: 45mOhm @ 6.5A, 10V
Power Dissipation (Max): 130W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.38 EUR
10+3.22 EUR
100+1.94 EUR
500+1.36 EUR
1000+1.15 EUR
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MOT13N50HF index_34.html
MOT13N50HF
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 500V 13A 0.39 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A
Rds On (Max) @ Id, Vgs: 45mOhm @ 6.5A, 10V
Power Dissipation (Max): 39W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.38 EUR
10+3.22 EUR
100+1.94 EUR
500+1.36 EUR
1000+1.15 EUR
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MOT13N50SF
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 500V 13A 0.51 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A
Rds On (Max) @ Id, Vgs: 55mOhm @ 6.5A, 10V
Power Dissipation (Max): 48W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.8 EUR
10+2.27 EUR
100+1.37 EUR
500+0.95 EUR
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MOT150N03A
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 30V 150A 3.9m To-22
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 130W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6297 pF @ 15 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.24 EUR
10+2.55 EUR
100+1.52 EUR
500+1.07 EUR
1000+0.9 EUR
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MOT150N03D trenchsgtmOS_738.html
MOT150N03D
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 30V 150A 1.5m To-25
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
Power Dissipation (Max): 83W
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 20 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.4 EUR
15+1.44 EUR
100+0.87 EUR
500+0.61 EUR
1000+0.51 EUR
2500+0.44 EUR
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MOT150N10A
MOT150N10A
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 100V 150A 3.4m To-2
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.71 EUR
10+5.22 EUR
100+3.13 EUR
500+2.19 EUR
1000+1.87 EUR
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MOT15N10C trenchsgtmOS_850.html
MOT15N10C
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 100V 15A 80m To-251
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A
Rds On (Max) @ Id, Vgs: 95mOhm @ 8A, 10V
Power Dissipation (Max): 50W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V
auf Bestellung 4200 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
17+1.26 EUR
28+0.76 EUR
100+0.45 EUR
500+0.32 EUR
1000+0.27 EUR
4200+0.23 EUR
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MOT15N10D trenchsgtmOS_849.html
MOT15N10D
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 100V 15A 80m To-252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A
Rds On (Max) @ Id, Vgs: 95mOhm @ 8A, 10V
Power Dissipation (Max): 50W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
17+1.26 EUR
28+0.76 EUR
100+0.45 EUR
500+0.32 EUR
1000+0.27 EUR
2500+0.23 EUR
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MOT15N50HF index_36.html
MOT15N50HF
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 500V 15A 0.4 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A
Rds On (Max) @ Id, Vgs: 400mOhm @ 7.5A, 10V
Power Dissipation (Max): 40W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.65 EUR
10+3.4 EUR
100+2.03 EUR
500+1.43 EUR
1000+1.21 EUR
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MOT16N50HF
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 500V 16A 0.3 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A
Rds On (Max) @ Id, Vgs: 35mOhm @ 8A, 10V
Power Dissipation (Max): 40W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.06 EUR
10+3.64 EUR
100+2.19 EUR
500+1.54 EUR
1000+1.3 EUR
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MOT16N65HF index_128.html
MOT16N65HF
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 16A 0.47 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A
Rds On (Max) @ Id, Vgs: 55mOhm @ 8A, 10V
Power Dissipation (Max): 60W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.76 EUR
10+3.45 EUR
100+2.07 EUR
500+1.45 EUR
1000+1.24 EUR
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MOT180N10A
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 100V 180A 3m To-220
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 260W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7470 pF @ 50 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.97 EUR
10+5.97 EUR
100+3.58 EUR
500+2.51 EUR
1000+2.13 EUR
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MOT180N10E trenchsgtmOS_732.html
MOT180N10E
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 100V 180A 3m To-263
Packaging: Tape & Reel (TR)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 260W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7470 pF @ 50 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+24.13 EUR
10+14.48 EUR
100+8.69 EUR
500+6.08 EUR
800+5.16 EUR
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MOT18N50HF index_40.html
MOT18N50HF
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 500V 18A 0.27 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A
Rds On (Max) @ Id, Vgs: 32mOhm @ 9A, 10V
Power Dissipation (Max): 42W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.34 EUR
10+3.8 EUR
100+2.28 EUR
500+1.59 EUR
1000+1.36 EUR
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MOT18N65HF index_129.html
MOT18N65HF
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 18A 0.35 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A
Rds On (Max) @ Id, Vgs: 43mOhm @ 9A, 10V
Power Dissipation (Max): 50W
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.85 EUR
10+4.12 EUR
100+2.46 EUR
500+1.73 EUR
Mindestbestellmenge: 4 Stücke
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MOT20N50HF
MOT20N50HF
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 500V 20A 0.19 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 24mOhm @ 10A, 10V
Power Dissipation (Max): 45W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.02 EUR
10+4.21 EUR
100+2.52 EUR
500+1.77 EUR
1000+1.5 EUR
Mindestbestellmenge: 3 Stücke
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MOT20N50W index_43.html
MOT20N50W
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 500V 20A 0.19 To247s
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 24mOhm @ 10A, 10V
Power Dissipation (Max): 260W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+10.25 EUR
10+6.15 EUR
100+3.69 EUR
600+2.58 EUR
Mindestbestellmenge: 3 Stücke
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MOT2124G
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH V A m PDFN5x6
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
53+0.39 EUR
86+0.25 EUR
143+0.14 EUR
500+0.1 EUR
1000+0.087 EUR
5000+0.074 EUR
Mindestbestellmenge: 53 Stücke
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MOT2135G trenchsgtmOS_705.html
MOT2135G
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 20V 60A 3m PDFN5x6
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
14+1.57 EUR
23+0.94 EUR
100+0.56 EUR
500+0.39 EUR
1000+0.33 EUR
5000+0.29 EUR
Mindestbestellmenge: 14 Stücke
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MOT2135J trenchsgtmOS_704.html
MOT2135J
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 20V 60A 3m PDFN3x3
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
14+1.55 EUR
23+0.92 EUR
100+0.55 EUR
500+0.39 EUR
1000+0.33 EUR
5000+0.29 EUR
Mindestbestellmenge: 14 Stücke
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MOT22N65HF index_132.html
MOT22N65HF
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 22A 0.35 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A
Rds On (Max) @ Id, Vgs: 42mOhm @ 11A, 10V
Power Dissipation (Max): 52W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.56 EUR
10+5.72 EUR
100+3.44 EUR
500+2.4 EUR
1000+2.05 EUR
Mindestbestellmenge: 3 Stücke
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MOT2305AB2
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET P-CH 20V 6A SOT23
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
67+0.31 EUR
110+0.19 EUR
184+0.11 EUR
500+0.08 EUR
1000+0.068 EUR
3000+0.058 EUR
Mindestbestellmenge: 67 Stücke
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MOT2310B2
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 60V 3A SOT23
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
56+0.38 EUR
93+0.23 EUR
156+0.13 EUR
500+0.094 EUR
1000+0.081 EUR
3000+0.068 EUR
Mindestbestellmenge: 56 Stücke
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MOT2514J trenchsgtmOS_677.html
MOT2514J
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 20V 12A 10m PDFN3x3
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
23+0.92 EUR
38+0.56 EUR
100+0.33 EUR
500+0.24 EUR
1000+0.2 EUR
5000+0.17 EUR
Mindestbestellmenge: 23 Stücke
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MOT25N50N
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 500V 25A 0.2 To247
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A
Rds On (Max) @ Id, Vgs: 24mOhm @ 5A, 10V
Power Dissipation (Max): 300W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+17.33 EUR
10+10.39 EUR
100+6.24 EUR
600+4.37 EUR
Mindestbestellmenge: 2 Stücke
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MOT25N50W index_209.html
MOT25N50W
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 500V 25A 0.21 To247s
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A
Rds On (Max) @ Id, Vgs: 24mOhm @ 12.5A, 10V
Power Dissipation (Max): 297W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 30 V
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+14.68 EUR
10+8.81 EUR
100+5.28 EUR
600+3.7 EUR
Mindestbestellmenge: 2 Stücke
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MOT2620J trenchsgtmOS_675.html
MOT2620J
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N+P-CH 20V 20A 9m PDFN3x
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 13W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 704pF @ 10V
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-PDFN (3x3)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
16+1.38 EUR
26+0.83 EUR
100+0.5 EUR
500+0.35 EUR
1000+0.3 EUR
5000+0.25 EUR
Mindestbestellmenge: 16 Stücke
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MOT2718J trenchsgtmOS_673.html
MOT2718J
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET P-CH 15V 8A 16m PDFN3x3
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
17+1.27 EUR
28+0.77 EUR
100+0.46 EUR
500+0.32 EUR
1000+0.27 EUR
5000+0.24 EUR
Mindestbestellmenge: 17 Stücke
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