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MBR40200F MBR40200F Guangdong Inmark Electronics Co., Ltd. index_9.html Description: DIODE ARR SCHOTT 200V 40A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 0.95 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.24 EUR
10+1.95 EUR
100+1.17 EUR
500+0.82 EUR
1000+0.7 EUR
Mindestbestellmenge: 6
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MBR4045A MBR4045A Guangdong Inmark Electronics Co., Ltd. index_209.html Description: DIODE ARR SCHOTT 45V 40A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 0.62 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
6+2.99 EUR
10+1.79 EUR
100+1.08 EUR
500+0.75 EUR
1000+0.64 EUR
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MBR4045F MBR4045F Guangdong Inmark Electronics Co., Ltd. index_211.html Description: DIODE ARR SCHOTT 45V 40A TO-220F
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 0.62 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.03 EUR
10+1.82 EUR
100+1.09 EUR
500+0.76 EUR
1000+0.65 EUR
Mindestbestellmenge: 6
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MBR4060A MBR4060A Guangdong Inmark Electronics Co., Ltd. index_214.html Description: DIODE ARR SCHOTT 60V 40A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 0.72 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.03 EUR
10+1.82 EUR
100+1.09 EUR
500+0.76 EUR
1000+0.65 EUR
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MBR4060F MBR4060F Guangdong Inmark Electronics Co., Ltd. index_216.html Description: DIODE ARR SCHOTT 60V 40A TO-220F
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 0.72 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.82 EUR
11+1.69 EUR
100+1.01 EUR
500+0.71 EUR
1000+0.6 EUR
Mindestbestellmenge: 7
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MBR60100A MBR60100A Guangdong Inmark Electronics Co., Ltd. index_22.html Description: DIODE ARR SCHOTT 100V 60A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 0.87 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.01 EUR
10+2.4 EUR
100+1.44 EUR
500+1.01 EUR
1000+0.86 EUR
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MBR60100F MBR60100F Guangdong Inmark Electronics Co., Ltd. index_24.html Description: DIODE ARR SCHOTT 100V 60A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 0.87 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.78 EUR
10+2.27 EUR
100+1.36 EUR
500+0.95 EUR
1000+0.81 EUR
Mindestbestellmenge: 5
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MJE15032 MJE15032 Guangdong Inmark Electronics Co., Ltd. audiotube_28.html Description: TRANS NPN 250V 8A To-220
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -40°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 50 W
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.87 EUR
11+1.71 EUR
100+1.03 EUR
500+0.72 EUR
1000+0.61 EUR
Mindestbestellmenge: 7
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MJE15033 MJE15033 Guangdong Inmark Electronics Co., Ltd. audiotube_27.html Description: TRANS PNP 250V 8A To-220
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -40°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 50 W
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.87 EUR
11+1.71 EUR
100+1.03 EUR
500+0.72 EUR
1000+0.61 EUR
Mindestbestellmenge: 7
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MMBT2222A MMBT2222A Guangdong Inmark Electronics Co., Ltd. smallsignaltransistor_5.html Description: TRANS NPN 40V 600MA SOT-23
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 350 mW
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
167+0.11 EUR
295+0.06 EUR
488+0.036 EUR
699+0.025 EUR
1000+0.021 EUR
Mindestbestellmenge: 167
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MMBT2907 MMBT2907 Guangdong Inmark Electronics Co., Ltd. smallsignaltransistor_6.html Description: TRANS PNP 60V 600MA SOT-23
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 15mA, 150mA
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 250 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
167+0.11 EUR
295+0.06 EUR
488+0.036 EUR
699+0.025 EUR
1000+0.021 EUR
3000+0.018 EUR
Mindestbestellmenge: 167
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MMBT3904 MMBT3904 Guangdong Inmark Electronics Co., Ltd. smallsignaltransistor_1.html Description: TRANS NPN 40V 200MA SOT-23
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 300 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
334+0.053 EUR
455+0.039 EUR
758+0.023 EUR
1083+0.016 EUR
1274+0.014 EUR
3000+0.012 EUR
Mindestbestellmenge: 334
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MMBT3906 MMBT3906 Guangdong Inmark Electronics Co., Ltd. smallsignaltransistor_2.html Description: TRANS PNP 40V 200MA SOT-23
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 300 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
334+0.053 EUR
455+0.039 EUR
764+0.023 EUR
1087+0.016 EUR
1281+0.014 EUR
3000+0.012 EUR
Mindestbestellmenge: 334
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MMBT5401 MMBT5401 Guangdong Inmark Electronics Co., Ltd. smallsignaltransistor_4.html Description: TRANS PNP 150V 600MA SOT-23
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 350 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
200+0.088 EUR
334+0.053 EUR
556+0.032 EUR
795+0.022 EUR
1000+0.019 EUR
3000+0.016 EUR
Mindestbestellmenge: 200
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MMBT5551 MMBT5551 Guangdong Inmark Electronics Co., Ltd. smallsignaltransistor_3.html Description: TRANS NPN 160V 600MA SOT-23
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 350 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
200+0.088 EUR
334+0.053 EUR
553+0.032 EUR
790+0.022 EUR
1000+0.019 EUR
3000+0.016 EUR
Mindestbestellmenge: 200
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MOT100N03MC MOT100N03MC Guangdong Inmark Electronics Co., Ltd. trenchsgtmOS_763.html Description: MOSFET N-CH 30V 100A 3.4m To-25
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 50W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 15 V
auf Bestellung 4200 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.2 EUR
25+0.71 EUR
100+0.43 EUR
500+0.3 EUR
1000+0.25 EUR
4200+0.22 EUR
Mindestbestellmenge: 15
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MOT100N03MD MOT100N03MD Guangdong Inmark Electronics Co., Ltd. trenchsgtmOS_762.html Description: MOSFET N-CH 30V 100A 3.4m To-25
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V
Power Dissipation (Max): 75W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 57.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.06 EUR
28+0.64 EUR
100+0.38 EUR
500+0.27 EUR
1000+0.23 EUR
2500+0.19 EUR
Mindestbestellmenge: 17
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MOT10N65D MOT10N65D Guangdong Inmark Electronics Co., Ltd. index_122.html Description: MOSFET N-CH 650V 10A 0.88 To252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Power Dissipation (Max): 100W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.24 EUR
10+1.95 EUR
100+1.17 EUR
500+0.82 EUR
1000+0.7 EUR
2500+0.59 EUR
Mindestbestellmenge: 6
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MOT10N65F MOT10N65F Guangdong Inmark Electronics Co., Ltd. index_119.html Description: MOSFET N-CH 650V 10A 0.67 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A
Rds On (Max) @ Id, Vgs: 75mOhm @ 5A, 10V
Power Dissipation (Max): 40W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.47 EUR
10+2.08 EUR
100+1.25 EUR
500+0.87 EUR
1000+0.74 EUR
Mindestbestellmenge: 6
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MOT10N80HF MOT10N80HF Guangdong Inmark Electronics Co., Ltd. index_160.html Description: MOSFET N-CH 800V 10A 1.4 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A
Rds On (Max) @ Id, Vgs: 1.55Ohm @ 5A, 10V
Power Dissipation (Max): 60W
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.88 EUR
10+4.73 EUR
100+2.84 EUR
500+1.98 EUR
Mindestbestellmenge: 3
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MOT1113T4 MOT1113T4 Guangdong Inmark Electronics Co., Ltd. mediumsgt_870.html Description: MOSFET N-CH 100V 399A 1.1m Toll-
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 399A
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Power Dissipation (Max): 455W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TOLT
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13574 pF @ 50 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
2+14.63 EUR
10+8.78 EUR
100+5.27 EUR
500+3.69 EUR
1000+3.14 EUR
2000+2.67 EUR
Mindestbestellmenge: 2
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MOT120N10A MOT120N10A Guangdong Inmark Electronics Co., Ltd. trenchsgtmOS_753.html Description: MOSFET N-CH 100V 120A 4.3m To-2
Packaging: Tube
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 130W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 84.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4646 pF @ 50 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.66 EUR
10+2.8 EUR
100+1.68 EUR
500+1.18 EUR
1000+1 EUR
Mindestbestellmenge: 4
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MOT120N10D MOT120N10D Guangdong Inmark Electronics Co., Ltd. trenchsgtmOS_750.html Description: MOSFET N-CH 100V 120A 4.3m To-2
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V
Power Dissipation (Max): 150W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4646 pF @ 50 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.1 EUR
10+3.06 EUR
100+1.83 EUR
500+1.28 EUR
1000+1.09 EUR
2500+0.93 EUR
Mindestbestellmenge: 4
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MOT120N10E MOT120N10E Guangdong Inmark Electronics Co., Ltd. trenchsgtmOS_752.html Description: MOSFET N-CH 100V 120A 4.3m To-2
Packaging: Tape & Reel (TR)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 130W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 84.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.35 EUR
10+5.6 EUR
100+3.36 EUR
500+2.35 EUR
800+2 EUR
Mindestbestellmenge: 2
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MOT12N65A MOT12N65A Guangdong Inmark Electronics Co., Ltd. index_123.html Description: MOSFET N-CH 650V 12A 0.56 To220
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A
Rds On (Max) @ Id, Vgs: 65mOhm @ 6A, 10V
Power Dissipation (Max): 145W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
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MOT12N65F MOT12N65F Guangdong Inmark Electronics Co., Ltd. index_124.html Description: MOSFET N-CH 650V 12A 0.56 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A
Rds On (Max) @ Id, Vgs: 65mOhm @ 6A, 10V
Power Dissipation (Max): 42W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
auf Bestellung 1000 Stücke:
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MOT12N65T MOT12N65T Guangdong Inmark Electronics Co., Ltd. mediumsgt_901.html Description: MOSFET N-CH 650V 12A 0.62m Toll-
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A
Rds On (Max) @ Id, Vgs: 72mOhm @ 6A, 10V
Power Dissipation (Max): 208W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TOLL-8L
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.06 EUR
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100+4.34 EUR
500+3.04 EUR
1000+2.58 EUR
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MOT13007MA MOT13007MA Guangdong Inmark Electronics Co., Ltd. index_6.html Description: TRANS NPN 700V 8A To-220
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 1A, 5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V
Frequency - Transition: 14MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 80 W
Produkt ist nicht verfügbar
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MOT13007MF MOT13007MF Guangdong Inmark Electronics Co., Ltd. index_8.html Description: TRANS NPN 700V 8A To-220F
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 1A, 5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V
Frequency - Transition: 14MHz
Supplier Device Package: TO-220FP
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 36 W
Produkt ist nicht verfügbar
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MOT13009DW MOT13009DW Guangdong Inmark Electronics Co., Ltd. index_15.html Description: TRANS NPN 700V 12A To-247S
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -40°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 3A, 12A
Current - Collector Cutoff (Max): 1mA
Frequency - Transition: 4MHz
Supplier Device Package: TO-247S
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 80 W
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.48 EUR
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MOT13N50A MOT13N50A Guangdong Inmark Electronics Co., Ltd. index_29.html Description: MOSFET N-CH 500V 13A 0.39 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A
Rds On (Max) @ Id, Vgs: 45mOhm @ 6.5A, 10V
Power Dissipation (Max): 130W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
auf Bestellung 1000 Stücke:
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500+1.15 EUR
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MOT13N50HF MOT13N50HF Guangdong Inmark Electronics Co., Ltd. index_34.html Description: MOSFET N-CH 500V 13A 0.39 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A
Rds On (Max) @ Id, Vgs: 45mOhm @ 6.5A, 10V
Power Dissipation (Max): 39W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.54 EUR
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500+1.15 EUR
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MOT13N50SF MOT13N50SF Guangdong Inmark Electronics Co., Ltd. index_30.html Description: MOSFET N-CH 500V 13A 0.51 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A
Rds On (Max) @ Id, Vgs: 55mOhm @ 6.5A, 10V
Power Dissipation (Max): 48W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.2 EUR
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100+1.15 EUR
500+0.81 EUR
1000+0.69 EUR
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MOT150N03A MOT150N03A Guangdong Inmark Electronics Co., Ltd. trenchsgtmOS_740.html Description: MOSFET N-CH 30V 150A 3.9m To-22
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 130W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6297 pF @ 15 V
auf Bestellung 1000 Stücke:
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MOT150N03D MOT150N03D Guangdong Inmark Electronics Co., Ltd. trenchsgtmOS_738.html Description: MOSFET N-CH 30V 150A 1.5m To-25
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
Power Dissipation (Max): 83W
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 20 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
9+1.97 EUR
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500+0.5 EUR
1000+0.42 EUR
2500+0.36 EUR
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MOT15N50HF MOT15N50HF Guangdong Inmark Electronics Co., Ltd. index_36.html Description: MOSFET N-CH 500V 15A 0.35 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A
Rds On (Max) @ Id, Vgs: 4mOhm @ 7.5A, 10V
Power Dissipation (Max): 40W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
auf Bestellung 1000 Stücke:
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500+1.18 EUR
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MOT16N50HF MOT16N50HF Guangdong Inmark Electronics Co., Ltd. index_38.html Description: MOSFET N-CH 500V 16A 0.3 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A
Rds On (Max) @ Id, Vgs: 35mOhm @ 8A, 10V
Power Dissipation (Max): 40W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
auf Bestellung 1000 Stücke:
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MOT16N65HF MOT16N65HF Guangdong Inmark Electronics Co., Ltd. index_128.html Description: MOSFET N-CH 650V 16A 0.47 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A
Rds On (Max) @ Id, Vgs: 55mOhm @ 8A, 10V
Power Dissipation (Max): 60W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
auf Bestellung 1000 Stücke:
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MOT18N50HF MOT18N50HF Guangdong Inmark Electronics Co., Ltd. index_40.html Description: MOSFET N-CH 500V 18A 0.27 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A
Rds On (Max) @ Id, Vgs: 32mOhm @ 9A, 10V
Power Dissipation (Max): 42W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
auf Bestellung 1000 Stücke:
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MOT18N65HF MOT18N65HF Guangdong Inmark Electronics Co., Ltd. index_129.html Description: MOSFET N-CH 650V 18A 0.35 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A
Rds On (Max) @ Id, Vgs: 43mOhm @ 9A, 10V
Power Dissipation (Max): 50W
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
auf Bestellung 1000 Stücke:
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MOT20N50HF MOT20N50HF Guangdong Inmark Electronics Co., Ltd. index_42.html Description: MOSFET N-CH 500V 20A 0.19 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 24mOhm @ 10A, 10V
Power Dissipation (Max): 45W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
auf Bestellung 1000 Stücke:
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MOT20N50W MOT20N50W Guangdong Inmark Electronics Co., Ltd. index_43.html Description: MOSFET N-CH 500V 20A 0.19 To247s
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 24mOhm @ 10A, 10V
Power Dissipation (Max): 260W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
auf Bestellung 600 Stücke:
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MOT22N65HF MOT22N65HF Guangdong Inmark Electronics Co., Ltd. index_132.html Description: MOSFET N-CH 650V 22A 0.35 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A
Rds On (Max) @ Id, Vgs: 42mOhm @ 11A, 10V
Power Dissipation (Max): 52W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
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500+2.02 EUR
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MOT25N50N MOT25N50N Guangdong Inmark Electronics Co., Ltd. index_197.html Description: MOSFET N-CH 500V 25A 0.2 To247
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A
Rds On (Max) @ Id, Vgs: 24mOhm @ 5A, 10V
Power Dissipation (Max): 300W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V
auf Bestellung 600 Stücke:
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MOT25N50W MOT25N50W Guangdong Inmark Electronics Co., Ltd. index_209.html Description: MOSFET N-CH 500V 25A 0.21 To247s
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A
Rds On (Max) @ Id, Vgs: 24mOhm @ 12.5A, 10V
Power Dissipation (Max): 297W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 30 V
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.88 EUR
10+7.13 EUR
100+4.28 EUR
600+2.99 EUR
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MOT2620J MOT2620J Guangdong Inmark Electronics Co., Ltd. trenchsgtmOS_675.html Description: MOSFET N+P-CH 20V 20A 9m PDFN3x
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 13W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 704pF @ 10V
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-PDFN (3x3)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
16+1.16 EUR
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1000+0.25 EUR
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MOT28N50HF MOT28N50HF Guangdong Inmark Electronics Co., Ltd. index_48.html Description: MOSFET N-CH 500V 28A 0.17 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A
Rds On (Max) @ Id, Vgs: 2mOhm @ 14A, 10V
Power Dissipation (Max): 55W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
2+8.91 EUR
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100+3.21 EUR
500+2.25 EUR
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MOT28N50Q MOT28N50Q Guangdong Inmark Electronics Co., Ltd. index_210.html Description: MOSFET N-CH 500V 28A 0.2 To3PB
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A
Rds On (Max) @ Id, Vgs: 2mOhm @ 14A, 10V
Power Dissipation (Max): 312.5W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PB
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)
2+13.16 EUR
10+7.9 EUR
100+4.74 EUR
600+3.32 EUR
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MOT3400AB2 MOT3400AB2 Guangdong Inmark Electronics Co., Ltd. smallsignalMOS_422.html Description: MOSFET N-CH 30V 5.8A SOT23
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V
Power Dissipation (Max): 350mW
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 15 V
auf Bestellung 3000 Stücke:
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500+0.07 EUR
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MOT4N65C MOT4N65C Guangdong Inmark Electronics Co., Ltd. index_91.html Description: MOSFET N-CH 650V 4A 2.3 To251
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 2A, 10V
Power Dissipation (Max): 75W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
auf Bestellung 4200 Stücke:
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MOT4N65D MOT4N65D Guangdong Inmark Electronics Co., Ltd. index_92.html Description: MOSFET N-CH 650V 4A 2.3 To252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 2A, 10V
Power Dissipation (Max): 75W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
auf Bestellung 2500 Stücke:
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MOT4N65F MOT4N65F Guangdong Inmark Electronics Co., Ltd. index_90.html Description: MOSFET N-CH 650V 4A 2.3 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 2A, 10V
Power Dissipation (Max): 30W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
auf Bestellung 1000 Stücke:
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MOT4N65T MOT4N65T Guangdong Inmark Electronics Co., Ltd. mediumsgt_913.html Description: MOSFET N-CH 650V 4A 2.4m Toll-8
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 2A, 10V
Power Dissipation (Max): 75W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TOLL-8L
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
auf Bestellung 2000 Stücke:
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MOT4N70D MOT4N70D Guangdong Inmark Electronics Co., Ltd. index_144.html Description: MOSFET N-CH 700V 4A 3 To252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 2A, 10V
Power Dissipation (Max): 50W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 25 V
auf Bestellung 2500 Stücke:
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MOT4N70F MOT4N70F Guangdong Inmark Electronics Co., Ltd. index_142.html Description: MOSFET N-CH 700V 4A 3 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 2A, 10V
Power Dissipation (Max): 30W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 25 V
auf Bestellung 1000 Stücke:
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MOT50N06C MOT50N06C Guangdong Inmark Electronics Co., Ltd. trenchsgtmOS_808.html Description: MOSFET N-CH 60V 50A 13m To-251
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 75W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V
auf Bestellung 4200 Stücke:
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MOT50N06D MOT50N06D Guangdong Inmark Electronics Co., Ltd. trenchsgtmOS_807.html Description: MOSFET N-CH 60V 50A 13m To-252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 75W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V
auf Bestellung 2500 Stücke:
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24+0.75 EUR
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MOT55N06B MOT55N06B Guangdong Inmark Electronics Co., Ltd. trenchsgtmOS_798.html Description: MOSFET N-CH 60V 55A m To-220
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A
Rds On (Max) @ Id, Vgs: 22mOhm @ 20A, 10V
Power Dissipation (Max): 100W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1478 pF @ 30 V
auf Bestellung 1000 Stücke:
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MOT65R099KN MOT65R099KN Guangdong Inmark Electronics Co., Ltd. highvoltageSJ_428.html Description: MOSFET N-CH 650V 40A 0.099 To-24
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A
Rds On (Max) @ Id, Vgs: 99mOhm @ 20A, 10V
Power Dissipation (Max): 357W
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Produkt ist nicht verfügbar
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MOT75N75D MOT75N75D Guangdong Inmark Electronics Co., Ltd. trenchsgtmOS_784.html Description: MOSFET N-CH 75V 75A 7.5m To-252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 115W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 30 V
auf Bestellung 2500 Stücke:
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6+3.4 EUR
10+2.04 EUR
100+1.22 EUR
500+0.86 EUR
1000+0.73 EUR
2500+0.62 EUR
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MBR40200F index_9.html
MBR40200F
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 200V 40A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 0.95 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
auf Bestellung 1000 Stücke:
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Anzahl Preis
6+3.24 EUR
10+1.95 EUR
100+1.17 EUR
500+0.82 EUR
1000+0.7 EUR
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MBR4045A index_209.html
MBR4045A
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 45V 40A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 0.62 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
auf Bestellung 1000 Stücke:
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Anzahl Preis
6+2.99 EUR
10+1.79 EUR
100+1.08 EUR
500+0.75 EUR
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MBR4045F index_211.html
MBR4045F
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 45V 40A TO-220F
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 0.62 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
auf Bestellung 1000 Stücke:
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Anzahl Preis
6+3.03 EUR
10+1.82 EUR
100+1.09 EUR
500+0.76 EUR
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MBR4060A index_214.html
MBR4060A
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 60V 40A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 0.72 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
auf Bestellung 1000 Stücke:
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Anzahl Preis
6+3.03 EUR
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MBR4060F index_216.html
MBR4060F
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 60V 40A TO-220F
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 0.72 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
auf Bestellung 1000 Stücke:
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Anzahl Preis
7+2.82 EUR
11+1.69 EUR
100+1.01 EUR
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MBR60100A index_22.html
MBR60100A
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 100V 60A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 0.87 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
auf Bestellung 1000 Stücke:
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Anzahl Preis
5+4.01 EUR
10+2.4 EUR
100+1.44 EUR
500+1.01 EUR
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MBR60100F index_24.html
MBR60100F
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 100V 60A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 0.87 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
auf Bestellung 1000 Stücke:
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Anzahl Preis
5+3.78 EUR
10+2.27 EUR
100+1.36 EUR
500+0.95 EUR
1000+0.81 EUR
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MJE15032 audiotube_28.html
MJE15032
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS NPN 250V 8A To-220
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -40°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 50 W
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.87 EUR
11+1.71 EUR
100+1.03 EUR
500+0.72 EUR
1000+0.61 EUR
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MJE15033 audiotube_27.html
MJE15033
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS PNP 250V 8A To-220
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -40°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 50 W
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.87 EUR
11+1.71 EUR
100+1.03 EUR
500+0.72 EUR
1000+0.61 EUR
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MMBT2222A smallsignaltransistor_5.html
MMBT2222A
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS NPN 40V 600MA SOT-23
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 350 mW
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
167+0.11 EUR
295+0.06 EUR
488+0.036 EUR
699+0.025 EUR
1000+0.021 EUR
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MMBT2907 smallsignaltransistor_6.html
MMBT2907
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS PNP 60V 600MA SOT-23
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 15mA, 150mA
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 250 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
167+0.11 EUR
295+0.06 EUR
488+0.036 EUR
699+0.025 EUR
1000+0.021 EUR
3000+0.018 EUR
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MMBT3904 smallsignaltransistor_1.html
MMBT3904
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS NPN 40V 200MA SOT-23
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 300 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
334+0.053 EUR
455+0.039 EUR
758+0.023 EUR
1083+0.016 EUR
1274+0.014 EUR
3000+0.012 EUR
Mindestbestellmenge: 334
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MMBT3906 smallsignaltransistor_2.html
MMBT3906
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS PNP 40V 200MA SOT-23
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 300 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
334+0.053 EUR
455+0.039 EUR
764+0.023 EUR
1087+0.016 EUR
1281+0.014 EUR
3000+0.012 EUR
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MMBT5401 smallsignaltransistor_4.html
MMBT5401
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS PNP 150V 600MA SOT-23
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 350 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
200+0.088 EUR
334+0.053 EUR
556+0.032 EUR
795+0.022 EUR
1000+0.019 EUR
3000+0.016 EUR
Mindestbestellmenge: 200
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MMBT5551 smallsignaltransistor_3.html
MMBT5551
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS NPN 160V 600MA SOT-23
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 350 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
200+0.088 EUR
334+0.053 EUR
553+0.032 EUR
790+0.022 EUR
1000+0.019 EUR
3000+0.016 EUR
Mindestbestellmenge: 200
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MOT100N03MC trenchsgtmOS_763.html
MOT100N03MC
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 30V 100A 3.4m To-25
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 50W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 15 V
auf Bestellung 4200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.2 EUR
25+0.71 EUR
100+0.43 EUR
500+0.3 EUR
1000+0.25 EUR
4200+0.22 EUR
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MOT100N03MD trenchsgtmOS_762.html
MOT100N03MD
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 30V 100A 3.4m To-25
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V
Power Dissipation (Max): 75W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 57.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.06 EUR
28+0.64 EUR
100+0.38 EUR
500+0.27 EUR
1000+0.23 EUR
2500+0.19 EUR
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MOT10N65D index_122.html
MOT10N65D
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 10A 0.88 To252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Power Dissipation (Max): 100W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.24 EUR
10+1.95 EUR
100+1.17 EUR
500+0.82 EUR
1000+0.7 EUR
2500+0.59 EUR
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MOT10N65F index_119.html
MOT10N65F
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 10A 0.67 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A
Rds On (Max) @ Id, Vgs: 75mOhm @ 5A, 10V
Power Dissipation (Max): 40W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.47 EUR
10+2.08 EUR
100+1.25 EUR
500+0.87 EUR
1000+0.74 EUR
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MOT10N80HF index_160.html
MOT10N80HF
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 800V 10A 1.4 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A
Rds On (Max) @ Id, Vgs: 1.55Ohm @ 5A, 10V
Power Dissipation (Max): 60W
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.88 EUR
10+4.73 EUR
100+2.84 EUR
500+1.98 EUR
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MOT1113T4 mediumsgt_870.html
MOT1113T4
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 100V 399A 1.1m Toll-
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 399A
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Power Dissipation (Max): 455W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TOLT
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13574 pF @ 50 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+14.63 EUR
10+8.78 EUR
100+5.27 EUR
500+3.69 EUR
1000+3.14 EUR
2000+2.67 EUR
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MOT120N10A trenchsgtmOS_753.html
MOT120N10A
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 100V 120A 4.3m To-2
Packaging: Tube
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 130W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 84.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4646 pF @ 50 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.66 EUR
10+2.8 EUR
100+1.68 EUR
500+1.18 EUR
1000+1 EUR
Mindestbestellmenge: 4
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MOT120N10D trenchsgtmOS_750.html
MOT120N10D
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 100V 120A 4.3m To-2
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V
Power Dissipation (Max): 150W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4646 pF @ 50 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.1 EUR
10+3.06 EUR
100+1.83 EUR
500+1.28 EUR
1000+1.09 EUR
2500+0.93 EUR
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MOT120N10E trenchsgtmOS_752.html
MOT120N10E
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 100V 120A 4.3m To-2
Packaging: Tape & Reel (TR)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 130W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 84.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.35 EUR
10+5.6 EUR
100+3.36 EUR
500+2.35 EUR
800+2 EUR
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MOT12N65A index_123.html
MOT12N65A
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 12A 0.56 To220
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A
Rds On (Max) @ Id, Vgs: 65mOhm @ 6A, 10V
Power Dissipation (Max): 145W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.52 EUR
10+2.71 EUR
100+1.63 EUR
500+1.14 EUR
1000+0.97 EUR
Mindestbestellmenge: 4
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MOT12N65F index_124.html
MOT12N65F
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 12A 0.56 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A
Rds On (Max) @ Id, Vgs: 65mOhm @ 6A, 10V
Power Dissipation (Max): 42W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.63 EUR
10+2.17 EUR
100+1.3 EUR
500+0.91 EUR
1000+0.77 EUR
Mindestbestellmenge: 5
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MOT12N65T mediumsgt_901.html
MOT12N65T
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 12A 0.62m Toll-
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A
Rds On (Max) @ Id, Vgs: 72mOhm @ 6A, 10V
Power Dissipation (Max): 208W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TOLL-8L
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.06 EUR
10+7.23 EUR
100+4.34 EUR
500+3.04 EUR
1000+2.58 EUR
2000+2.2 EUR
Mindestbestellmenge: 2
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MOT13007MA index_6.html
MOT13007MA
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS NPN 700V 8A To-220
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 1A, 5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V
Frequency - Transition: 14MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 80 W
Produkt ist nicht verfügbar
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MOT13007MF index_8.html
MOT13007MF
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS NPN 700V 8A To-220F
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 1A, 5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V
Frequency - Transition: 14MHz
Supplier Device Package: TO-220FP
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 36 W
Produkt ist nicht verfügbar
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MOT13009DW index_15.html
MOT13009DW
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS NPN 700V 12A To-247S
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -40°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 3A, 12A
Current - Collector Cutoff (Max): 1mA
Frequency - Transition: 4MHz
Supplier Device Package: TO-247S
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 80 W
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.48 EUR
10+2.09 EUR
100+1.25 EUR
500+0.88 EUR
1000+0.75 EUR
3000+0.63 EUR
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MOT13N50A index_29.html
MOT13N50A
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 500V 13A 0.39 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A
Rds On (Max) @ Id, Vgs: 45mOhm @ 6.5A, 10V
Power Dissipation (Max): 130W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.54 EUR
10+2.73 EUR
100+1.64 EUR
500+1.15 EUR
1000+0.97 EUR
Mindestbestellmenge: 4
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MOT13N50HF index_34.html
MOT13N50HF
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 500V 13A 0.39 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A
Rds On (Max) @ Id, Vgs: 45mOhm @ 6.5A, 10V
Power Dissipation (Max): 39W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.54 EUR
10+2.73 EUR
100+1.64 EUR
500+1.15 EUR
1000+0.97 EUR
Mindestbestellmenge: 4
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MOT13N50SF index_30.html
MOT13N50SF
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 500V 13A 0.51 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A
Rds On (Max) @ Id, Vgs: 55mOhm @ 6.5A, 10V
Power Dissipation (Max): 48W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.2 EUR
10+1.92 EUR
100+1.15 EUR
500+0.81 EUR
1000+0.69 EUR
Mindestbestellmenge: 6
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MOT150N03A trenchsgtmOS_740.html
MOT150N03A
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 30V 150A 3.9m To-22
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 130W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6297 pF @ 15 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.48 EUR
10+2.09 EUR
100+1.26 EUR
500+0.88 EUR
1000+0.75 EUR
Mindestbestellmenge: 6
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MOT150N03D trenchsgtmOS_738.html
MOT150N03D
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 30V 150A 1.5m To-25
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
Power Dissipation (Max): 83W
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 20 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+1.97 EUR
15+1.19 EUR
100+0.71 EUR
500+0.5 EUR
1000+0.42 EUR
2500+0.36 EUR
Mindestbestellmenge: 9
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MOT15N50HF index_36.html
MOT15N50HF
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 500V 15A 0.35 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A
Rds On (Max) @ Id, Vgs: 4mOhm @ 7.5A, 10V
Power Dissipation (Max): 40W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.68 EUR
10+2.82 EUR
100+1.69 EUR
500+1.18 EUR
1000+1 EUR
Mindestbestellmenge: 4
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MOT16N50HF index_38.html
MOT16N50HF
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 500V 16A 0.3 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A
Rds On (Max) @ Id, Vgs: 35mOhm @ 8A, 10V
Power Dissipation (Max): 40W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.02 EUR
10+3.01 EUR
100+1.81 EUR
500+1.27 EUR
1000+1.08 EUR
Mindestbestellmenge: 4
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MOT16N65HF index_128.html
MOT16N65HF
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 16A 0.47 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A
Rds On (Max) @ Id, Vgs: 55mOhm @ 8A, 10V
Power Dissipation (Max): 60W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.73 EUR
10+2.84 EUR
100+1.71 EUR
500+1.19 EUR
1000+1.01 EUR
Mindestbestellmenge: 4
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MOT18N50HF index_40.html
MOT18N50HF
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 500V 18A 0.27 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A
Rds On (Max) @ Id, Vgs: 32mOhm @ 9A, 10V
Power Dissipation (Max): 42W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.14 EUR
10+3.08 EUR
100+1.85 EUR
500+1.29 EUR
1000+1.1 EUR
Mindestbestellmenge: 4
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MOT18N65HF index_129.html
MOT18N65HF
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 18A 0.35 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A
Rds On (Max) @ Id, Vgs: 43mOhm @ 9A, 10V
Power Dissipation (Max): 50W
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.58 EUR
10+3.35 EUR
100+2.01 EUR
500+1.41 EUR
1000+1.2 EUR
Mindestbestellmenge: 4
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MOT20N50HF index_42.html
MOT20N50HF
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 500V 20A 0.19 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 24mOhm @ 10A, 10V
Power Dissipation (Max): 45W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+5.9 EUR
10+3.54 EUR
100+2.12 EUR
500+1.49 EUR
1000+1.26 EUR
Mindestbestellmenge: 3
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MOT20N50W index_43.html
MOT20N50W
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 500V 20A 0.19 To247s
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 24mOhm @ 10A, 10V
Power Dissipation (Max): 260W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.61 EUR
10+5.17 EUR
100+3.1 EUR
600+2.17 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
MOT22N65HF index_132.html
MOT22N65HF
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 22A 0.35 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A
Rds On (Max) @ Id, Vgs: 42mOhm @ 11A, 10V
Power Dissipation (Max): 52W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.03 EUR
10+4.81 EUR
100+2.89 EUR
500+2.02 EUR
1000+1.72 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
MOT25N50N index_197.html
MOT25N50N
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 500V 25A 0.2 To247
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A
Rds On (Max) @ Id, Vgs: 24mOhm @ 5A, 10V
Power Dissipation (Max): 300W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+14.01 EUR
10+8.4 EUR
100+5.04 EUR
600+3.53 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
MOT25N50W index_209.html
MOT25N50W
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 500V 25A 0.21 To247s
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A
Rds On (Max) @ Id, Vgs: 24mOhm @ 12.5A, 10V
Power Dissipation (Max): 297W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 30 V
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.88 EUR
10+7.13 EUR
100+4.28 EUR
600+2.99 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
MOT2620J trenchsgtmOS_675.html
MOT2620J
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N+P-CH 20V 20A 9m PDFN3x
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 13W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 704pF @ 10V
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-PDFN (3x3)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.16 EUR
26+0.7 EUR
100+0.42 EUR
500+0.29 EUR
1000+0.25 EUR
5000+0.21 EUR
Mindestbestellmenge: 16
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MOT28N50HF index_48.html
MOT28N50HF
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 500V 28A 0.17 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A
Rds On (Max) @ Id, Vgs: 2mOhm @ 14A, 10V
Power Dissipation (Max): 55W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+8.91 EUR
10+5.35 EUR
100+3.21 EUR
500+2.25 EUR
1000+1.91 EUR
Mindestbestellmenge: 2
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MOT28N50Q index_210.html
MOT28N50Q
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 500V 28A 0.2 To3PB
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A
Rds On (Max) @ Id, Vgs: 2mOhm @ 14A, 10V
Power Dissipation (Max): 312.5W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PB
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.16 EUR
10+7.9 EUR
100+4.74 EUR
600+3.32 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
MOT3400AB2 smallsignalMOS_422.html
MOT3400AB2
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 30V 5.8A SOT23
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V
Power Dissipation (Max): 350mW
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
63+0.28 EUR
107+0.17 EUR
177+0.099 EUR
500+0.07 EUR
1000+0.059 EUR
3000+0.05 EUR
Mindestbestellmenge: 63
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MOT4N65C index_91.html
MOT4N65C
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 4A 2.3 To251
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 2A, 10V
Power Dissipation (Max): 75W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
auf Bestellung 4200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.65 EUR
18+0.99 EUR
100+0.6 EUR
500+0.42 EUR
1000+0.35 EUR
4200+0.3 EUR
Mindestbestellmenge: 11
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MOT4N65D index_92.html
MOT4N65D
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 4A 2.3 To252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 2A, 10V
Power Dissipation (Max): 75W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.65 EUR
18+0.99 EUR
100+0.6 EUR
500+0.42 EUR
1000+0.35 EUR
2500+0.3 EUR
Mindestbestellmenge: 11
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MOT4N65F index_90.html
MOT4N65F
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 4A 2.3 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 2A, 10V
Power Dissipation (Max): 30W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.02 EUR
15+1.22 EUR
100+0.73 EUR
500+0.51 EUR
1000+0.44 EUR
Mindestbestellmenge: 9
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MOT4N65T mediumsgt_913.html
MOT4N65T
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 4A 2.4m Toll-8
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 2A, 10V
Power Dissipation (Max): 75W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TOLL-8L
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.37 EUR
10+3.82 EUR
100+2.29 EUR
500+1.6 EUR
1000+1.36 EUR
2000+1.16 EUR
Mindestbestellmenge: 3
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MOT4N70D index_144.html
MOT4N70D
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 700V 4A 3 To252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 2A, 10V
Power Dissipation (Max): 50W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.78 EUR
17+1.07 EUR
100+0.64 EUR
500+0.45 EUR
1000+0.38 EUR
2500+0.32 EUR
Mindestbestellmenge: 10
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MOT4N70F index_142.html
MOT4N70F
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 700V 4A 3 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 2A, 10V
Power Dissipation (Max): 30W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.13 EUR
14+1.27 EUR
100+0.76 EUR
500+0.53 EUR
1000+0.45 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
MOT50N06C trenchsgtmOS_808.html
MOT50N06C
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 60V 50A 13m To-251
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 75W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V
auf Bestellung 4200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.37 EUR
22+0.83 EUR
100+0.5 EUR
500+0.35 EUR
1000+0.3 EUR
4200+0.25 EUR
Mindestbestellmenge: 13
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MOT50N06D trenchsgtmOS_807.html
MOT50N06D
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 60V 50A 13m To-252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 75W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+0.84 EUR
24+0.75 EUR
100+0.45 EUR
500+0.31 EUR
1000+0.27 EUR
2500+0.23 EUR
Mindestbestellmenge: 21
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MOT55N06B trenchsgtmOS_798.html
MOT55N06B
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 60V 55A m To-220
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A
Rds On (Max) @ Id, Vgs: 22mOhm @ 20A, 10V
Power Dissipation (Max): 100W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1478 pF @ 30 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+2.94 EUR
10+1.77 EUR
100+1.06 EUR
500+0.74 EUR
1000+0.63 EUR
Mindestbestellmenge: 6
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MOT65R099KN highvoltageSJ_428.html
MOT65R099KN
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 40A 0.099 To-24
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A
Rds On (Max) @ Id, Vgs: 99mOhm @ 20A, 10V
Power Dissipation (Max): 357W
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Produkt ist nicht verfügbar
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MOT75N75D trenchsgtmOS_784.html
MOT75N75D
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 75V 75A 7.5m To-252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 115W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 30 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.4 EUR
10+2.04 EUR
100+1.22 EUR
500+0.86 EUR
1000+0.73 EUR
2500+0.62 EUR
Mindestbestellmenge: 6
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