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MOT4N70D MOT4N70D Guangdong Inmark Electronics Co., Ltd. index_144.html Description: MOSFET N-CH 700V 4A 3 To252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 2A, 10V
Power Dissipation (Max): 50W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
10+2.12 EUR
17+1.27 EUR
100+0.76 EUR
500+0.54 EUR
1000+0.45 EUR
2500+0.38 EUR
Mindestbestellmenge: 10 Stücke
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MOT4N70F MOT4N70F Guangdong Inmark Electronics Co., Ltd. index_142.html Description: MOSFET N-CH 700V 4A 3 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 2A, 10V
Power Dissipation (Max): 30W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.53 EUR
14+1.51 EUR
100+0.9 EUR
500+0.63 EUR
1000+0.54 EUR
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MOT50N03BD MOT50N03BD Guangdong Inmark Electronics Co., Ltd. trenchsgtmOS_813.html Description: MOSFET N-CH 30V 50A 7.3m To-252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
Power Dissipation (Max): 40W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
20+1.05 EUR
34+0.63 EUR
100+0.38 EUR
500+0.26 EUR
1000+0.23 EUR
2500+0.19 EUR
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MOT50N03C MOT50N03C Guangdong Inmark Electronics Co., Ltd. trenchsgtmOS_811.html Description: MOSFET N-CH 30V 50A 7.3m To-251
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A
Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V
Power Dissipation (Max): 50W
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 12 V
auf Bestellung 4200 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.26 EUR
28+0.75 EUR
100+0.45 EUR
500+0.32 EUR
1000+0.27 EUR
4200+0.23 EUR
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MOT50N03D MOT50N03D Guangdong Inmark Electronics Co., Ltd. trenchsgtmOS_812.html Description: MOSFET N-CH 30V 50A 7.3m To-252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
Power Dissipation (Max): 40W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 20 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
19+1.15 EUR
31+0.69 EUR
100+0.42 EUR
500+0.29 EUR
1000+0.25 EUR
2500+0.21 EUR
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MOT50N04D MOT50N04D Guangdong Inmark Electronics Co., Ltd. trenchsgtmOS_809.html Description: MOSFET N-CH 40V 50A 8m To-252
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.7 EUR
21+1.01 EUR
100+0.61 EUR
500+0.43 EUR
1000+0.36 EUR
2500+0.31 EUR
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MOT50N06C Guangdong Inmark Electronics Co., Ltd. Description: MOSFET N-CH 60V 50A 13m To-251
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 75W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V
auf Bestellung 4200 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.68 EUR
21+1.01 EUR
100+0.61 EUR
500+0.43 EUR
1000+0.36 EUR
4200+0.31 EUR
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MOT50N06D MOT50N06D Guangdong Inmark Electronics Co., Ltd. trenchsgtmOS_807.html Description: MOSFET N-CH 60V 50A 13m To-252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 75W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
21+1.02 EUR
23+0.92 EUR
100+0.55 EUR
500+0.38 EUR
1000+0.32 EUR
2500+0.27 EUR
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MOT55N06B MOT55N06B Guangdong Inmark Electronics Co., Ltd. trenchsgtmOS_798.html Description: MOSFET N-CH 60V 55A m To-220
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A
Rds On (Max) @ Id, Vgs: 22mOhm @ 20A, 10V
Power Dissipation (Max): 100W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1478 pF @ 30 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.56 EUR
10+2.14 EUR
100+1.29 EUR
500+0.9 EUR
1000+0.76 EUR
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MOT5N65A MOT5N65A Guangdong Inmark Electronics Co., Ltd. index_93.html Description: MOSFET N-CH 650V 5A 2.1 To220
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2.5A, 10V
Power Dissipation (Max): 75W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 631 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.76 EUR
13+1.67 EUR
100+1 EUR
500+0.7 EUR
1000+0.6 EUR
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MOT5N65F MOT5N65F Guangdong Inmark Electronics Co., Ltd. index_94.html Description: MOSFET N-CH 650V 5A 2 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2.5A, 10V
Power Dissipation (Max): 30W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 628 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.37 EUR
15+1.42 EUR
100+0.84 EUR
500+0.6 EUR
1000+0.5 EUR
Mindestbestellmenge: 9 Stücke
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MOT60N02D MOT60N02D Guangdong Inmark Electronics Co., Ltd. trenchsgtmOS_792.html Description: MOSFET N-CH 20V 60A 6.5m To-252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 4.5V
Power Dissipation (Max): 40W
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 10 V
Produkt ist nicht verfügbar
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MOT6111G MOT6111G Guangdong Inmark Electronics Co., Ltd. trenchsgtmOS_500.html Description: MOSFET N-CH 60V 226A 2m PDFN5x6
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 226A
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 20A, 10V
Power Dissipation (Max): 147W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 30 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.23 EUR
10+4.95 EUR
100+2.96 EUR
500+2.07 EUR
1000+1.76 EUR
5000+1.5 EUR
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MOT6515G MOT6515G Guangdong Inmark Electronics Co., Ltd. trenchsgtmOS_476.html Description: MOSFET N-CH 60V 50A 13m PDFN5x6
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 75W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.68 EUR
14+1.61 EUR
100+0.96 EUR
500+0.68 EUR
1000+0.57 EUR
5000+0.49 EUR
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MOT6522G MOT6522G Guangdong Inmark Electronics Co., Ltd. trenchsgtmOS_471.html Description: MOSFET N-CH 60V 35A 15m PDFN5x6
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A
Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V
Power Dissipation (Max): 42W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 612 pF @ 20 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.7 EUR
21+1.02 EUR
100+0.61 EUR
500+0.43 EUR
1000+0.37 EUR
5000+0.31 EUR
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MOT65R099KN MOT65R099KN Guangdong Inmark Electronics Co., Ltd. highvoltageSJ_428.html Description: MOSFET N-CH 650V 40A 0.099 To-24
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A
Rds On (Max) @ Id, Vgs: 99mOhm @ 20A, 10V
Power Dissipation (Max): 357W
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)
1+27.54 EUR
10+16.52 EUR
100+9.91 EUR
600+6.94 EUR
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MOT65R180HGF MOT65R180HGF Guangdong Inmark Electronics Co., Ltd. highvoltageSJ_427.html Description: MOSFET N-CH 650V 20A 0.18 To-220
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.47 EUR
10+6.3 EUR
100+3.77 EUR
500+2.64 EUR
1000+2.25 EUR
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MOT65R190HKF MOT65R190HKF Guangdong Inmark Electronics Co., Ltd. highvoltageSJ_267.html Description: MOSFET N-CH 650V 20A 0.15 To-220
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Power Dissipation (Max): 37W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
2+16.28 EUR
10+9.76 EUR
100+5.85 EUR
500+4.09 EUR
1000+3.49 EUR
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MOT70N03D MOT70N03D Guangdong Inmark Electronics Co., Ltd. trenchsgtmOS_788.html Description: MOSFET N-CH 30V 7A 5.5m To-252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 4.5V
Power Dissipation (Max): 53W
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1485 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
18+1.18 EUR
30+0.7 EUR
100+0.42 EUR
500+0.3 EUR
1000+0.25 EUR
2500+0.21 EUR
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MOT75N75D Guangdong Inmark Electronics Co., Ltd. Description: MOSFET N-CH 75V 75A 7.5m To-252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 115W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 30 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.21 EUR
10+2.52 EUR
100+1.51 EUR
500+1.06 EUR
1000+0.9 EUR
2500+0.76 EUR
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MOT7N65AC MOT7N65AC Guangdong Inmark Electronics Co., Ltd. index_105.html Description: MOSFET N-CH 650V 7A 1.12 To251
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 1.35Ohm @ 3.5A, 10V
Power Dissipation (Max): 100W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 4200 Stücke:
Lieferzeit 10-14 Tag (e)
11+2.01 EUR
13+1.67 EUR
100+1 EUR
500+0.7 EUR
1000+0.6 EUR
4200+0.51 EUR
Mindestbestellmenge: 11 Stücke
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MOT7N65AD Guangdong Inmark Electronics Co., Ltd. Description: MOSFET N-CH 650V 7A 1.12 To252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 1.35Ohm @ 3.5A, 10V
Power Dissipation (Max): 100W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
11+2.01 EUR
13+1.67 EUR
100+1 EUR
500+0.7 EUR
1000+0.6 EUR
2500+0.51 EUR
Mindestbestellmenge: 11 Stücke
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MOT7N65AF Guangdong Inmark Electronics Co., Ltd. Description: MOSFET N-CH 650V 7A 1.12 To220F
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.25 EUR
11+1.95 EUR
100+1.17 EUR
500+0.82 EUR
1000+0.7 EUR
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MOT7N70C MOT7N70C Guangdong Inmark Electronics Co., Ltd. index_147.html Description: MOSFET N-CH 700V 7A 1.45 To251
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 3.5A, 10V
Power Dissipation (Max): 100W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 4200 Stücke:
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8+2.89 EUR
13+1.73 EUR
100+1.04 EUR
500+0.73 EUR
1000+0.62 EUR
4200+0.52 EUR
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MOT7N70D MOT7N70D Guangdong Inmark Electronics Co., Ltd. index_148.html Description: MOSFET N-CH 700V 7A 1.45 To252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 3.5A, 10V
Power Dissipation (Max): 100W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 2500 Stücke:
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7+3 EUR
12+1.8 EUR
100+1.07 EUR
500+0.75 EUR
1000+0.64 EUR
2500+0.55 EUR
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MOT7N70F MOT7N70F Guangdong Inmark Electronics Co., Ltd. index_146.html Description: MOSFET N-CH 700V 7A 1.45 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 3.5A, 10V
Power Dissipation (Max): 38W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 1000 Stücke:
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7+3.22 EUR
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100+1.17 EUR
500+0.81 EUR
1000+0.69 EUR
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MOT7N80F MOT7N80F Guangdong Inmark Electronics Co., Ltd. index_158.html Description: MOSFET N-CH 800V 7A 1.5 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 3.5A, 10V
Power Dissipation (Max): 33W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 1000 Stücke:
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3+7.77 EUR
10+4.66 EUR
100+2.8 EUR
500+1.96 EUR
1000+1.67 EUR
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MOT80N03C MOT80N03C Guangdong Inmark Electronics Co., Ltd. trenchsgtmOS_781.html Description: MOSFET N-CH 30V 80A 4m To-251
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Power Dissipation (Max): 78W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 20 V
auf Bestellung 4200 Stücke:
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17+1.3 EUR
27+0.79 EUR
100+0.48 EUR
500+0.33 EUR
1000+0.29 EUR
4200+0.24 EUR
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MOT80N03D MOT80N03D Guangdong Inmark Electronics Co., Ltd. trenchsgtmOS_780.html Description: MOSFET N-CH 30V 80A 4m To-252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Power Dissipation (Max): 78W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 20 V
auf Bestellung 2498 Stücke:
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20+1.05 EUR
34+0.63 EUR
100+0.38 EUR
500+0.26 EUR
1000+0.23 EUR
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MOT80N03XD Guangdong Inmark Electronics Co., Ltd. Description: MOSFET N-CH 30V 80A 4m To-252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Power Dissipation (Max): 78W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 20 V
auf Bestellung 2500 Stücke:
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20+1.05 EUR
34+0.63 EUR
100+0.38 EUR
500+0.26 EUR
1000+0.23 EUR
2500+0.19 EUR
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MOT8205SA6 MOT8205SA6 Guangdong Inmark Electronics Co., Ltd. smallsignalMOS_441.html Description: MOSFET -CH V MA SOT23
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 4.5V
Power Dissipation (Max): 1.14W
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 20 V
auf Bestellung 3000 Stücke:
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59+0.36 EUR
102+0.2 EUR
169+0.12 EUR
500+0.087 EUR
1000+0.074 EUR
3000+0.063 EUR
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MOT8N65MD MOT8N65MD Guangdong Inmark Electronics Co., Ltd. index_116.html Description: MOSFET N-CH 650V 8A 1.1 To252
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.93 EUR
12+1.75 EUR
100+1.05 EUR
500+0.74 EUR
1000+0.63 EUR
2500+0.54 EUR
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MOT8N65MF Guangdong Inmark Electronics Co., Ltd. Description: MOSFET N-CH 650V 8A 1.1 To220F
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.39 EUR
11+2.03 EUR
100+1.21 EUR
500+0.86 EUR
1000+0.73 EUR
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MOT8N80HF MOT8N80HF Guangdong Inmark Electronics Co., Ltd. index_159.html Description: MOSFET N-CH 800V 8A 1.35 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 4A, 10V
Power Dissipation (Max): 50W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 1000 Stücke:
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3+8.23 EUR
10+4.95 EUR
100+2.96 EUR
500+2.07 EUR
1000+1.76 EUR
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MOT90N03D MOT90N03D Guangdong Inmark Electronics Co., Ltd. trenchsgtmOS_768.html Description: MOSFET N-CH 30V 90A 3.4m To-252
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.57 EUR
23+0.94 EUR
100+0.57 EUR
500+0.39 EUR
1000+0.33 EUR
2500+0.29 EUR
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MOT9N50D MOT9N50D Guangdong Inmark Electronics Co., Ltd. index_18.html Description: MOSFET N-CH 500V 9A 0.72 To252
Packaging: Tape & Reel (TR)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A
Rds On (Max) @ Id, Vgs: 8mOhm @ 4.5A, 10V
Power Dissipation (Max): 60W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
auf Bestellung 2500 Stücke:
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8+2.67 EUR
14+1.61 EUR
100+0.96 EUR
500+0.68 EUR
1000+0.57 EUR
2500+0.49 EUR
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MOT9N90HF MOT9N90HF Guangdong Inmark Electronics Co., Ltd. index_169.html Description: MOSFET N-CH 900V 9A 1.4 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 4.5A, 10V
Power Dissipation (Max): 36W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
auf Bestellung 1000 Stücke:
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3+9.45 EUR
10+5.66 EUR
100+3.4 EUR
500+2.38 EUR
1000+2.02 EUR
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MUR1620A MUR1620A Guangdong Inmark Electronics Co., Ltd. fastrecoverydiode_115.html Description: DIODE ARR FRD 200V 16A TO-220
Packaging: Tube
Mounting Type: Through Hole
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 1000 Stücke:
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6+3.94 EUR
10+2.36 EUR
100+1.42 EUR
500+0.99 EUR
1000+0.84 EUR
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MUR1640A MUR1640A Guangdong Inmark Electronics Co., Ltd. fastrecoverydiode_118.html Description: DIODE ARR FRD 400V 16A TO-220
Packaging: Tube
Mounting Type: Through Hole
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 1000 Stücke:
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MUR1640F MUR1640F Guangdong Inmark Electronics Co., Ltd. fastrecoverydiode_120.html Description: DIODE ARR FRD 400V 16A TO-220F
Packaging: Tube
Mounting Type: Through Hole
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 900 Stücke:
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MUR2002A MUR2002A Guangdong Inmark Electronics Co., Ltd. fastrecoverydiode_124.html Description: DIODE ARR FRD 200V 20A TO-220
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.42 EUR
11+2.05 EUR
100+1.23 EUR
500+0.86 EUR
1000+0.73 EUR
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MUR2002F MUR2002F Guangdong Inmark Electronics Co., Ltd. fastrecoverydiode_126.html Description: DIODE ARR FRD 200V 20A TO-220F
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.42 EUR
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100+1.23 EUR
500+0.86 EUR
1000+0.73 EUR
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MUR2040F MUR2040F Guangdong Inmark Electronics Co., Ltd. fastrecoverydiode_129.html Description: DIODE ARR FRD 400V 20A TO-220F
Packaging: Tube
Mounting Type: Through Hole
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 1000 Stücke:
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7+3.14 EUR
12+1.89 EUR
100+1.13 EUR
500+0.8 EUR
1000+0.68 EUR
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NJW0281G NJW0281G Guangdong Inmark Electronics Co., Ltd. audiotube_33.html Description: TRANS NPN 250V 15A TO-3PB
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -50°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 0.5A, 5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 5V
Frequency - Transition: 20MHz
Supplier Device Package: TO-3PB
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 160 W
auf Bestellung 2400 Stücke:
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2+11.94 EUR
10+7.18 EUR
100+4.32 EUR
500+3.03 EUR
1000+2.59 EUR
2400+2.2 EUR
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NJW0302G NJW0302G Guangdong Inmark Electronics Co., Ltd. audiotube_34.html Description: TRANS PNP 250V 15A TO-3PB
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -50°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 0.5A, 5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 5V
Frequency - Transition: 20MHz
Supplier Device Package: TO-3PB
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 160 W
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.27 EUR
10+7.37 EUR
100+4.43 EUR
600+3.09 EUR
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S8050 S8050 Guangdong Inmark Electronics Co., Ltd. smallsignaltransistor_7.html Description: TRANS NPN 25V 500MA SOT-23
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 100mA, 1V
Frequency - Transition: 120MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 255 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
250+0.083 EUR
400+0.052 EUR
650+0.032 EUR
926+0.023 EUR
1090+0.019 EUR
3000+0.017 EUR
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S8550 S8550 Guangdong Inmark Electronics Co., Ltd. smallsignaltransistor_10.html Description: TRANS PNP 25V 500MA SOT-23
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
250+0.083 EUR
400+0.052 EUR
650+0.032 EUR
926+0.023 EUR
1090+0.019 EUR
3000+0.017 EUR
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S9012 S9012 Guangdong Inmark Electronics Co., Ltd. smallsignaltransistor_15.html Description: TRANS PNP 25V 500MA SOT-23
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 300 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
250+0.083 EUR
400+0.052 EUR
650+0.032 EUR
926+0.023 EUR
1090+0.019 EUR
3000+0.017 EUR
Mindestbestellmenge: 250 Stücke
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S9013 Guangdong Inmark Electronics Co., Ltd. S9013_prod.pdf 5272_S9013.pdf 5399_S9013%20SOT-23.PDF Description: TRANS NPN 25V 500MA SOT-23
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 300 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
250+0.083 EUR
385+0.055 EUR
629+0.033 EUR
900+0.024 EUR
1060+0.02 EUR
3000+0.017 EUR
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S9014 Guangdong Inmark Electronics Co., Ltd. 5272_S9014.pdf 5399_S9014%20SOT-23.PDF S9014S20000SJ6.pdf S9014-4491.pdf GK-SOT-23_S9014-202604.pdf Description: TRANS NPN 45V 150MA SOT-23
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 225 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
250+0.083 EUR
435+0.048 EUR
741+0.029 EUR
1058+0.02 EUR
1243+0.017 EUR
3000+0.014 EUR
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S9015 S9015 Guangdong Inmark Electronics Co., Ltd. smallsignaltransistor_16.html Description: TRANS PNP 45V 100MA SOT-23
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 200 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
250+0.083 EUR
385+0.055 EUR
642+0.032 EUR
916+0.023 EUR
1078+0.019 EUR
3000+0.017 EUR
Mindestbestellmenge: 250 Stücke
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SS8050 SS8050 Guangdong Inmark Electronics Co., Ltd. smallsignaltransistor_13.html Description: TRANS NPN 25V 1500MA SOT-23
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
200+0.1 EUR
304+0.069 EUR
506+0.042 EUR
721+0.029 EUR
1000+0.025 EUR
3000+0.021 EUR
Mindestbestellmenge: 200 Stücke
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SS8550 SS8550 Guangdong Inmark Electronics Co., Ltd. smallsignaltransistor_14.html Description: TRANS PNP 25V 1500MA SOT-23
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
200+0.1 EUR
313+0.067 EUR
530+0.039 EUR
755+0.027 EUR
1000+0.024 EUR
3000+0.02 EUR
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TIP35C TIP35C Guangdong Inmark Electronics Co., Ltd. audiotube_37.html Description: TRANS NPN 100V 25A
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -40°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 25A, 5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1.5A, 5V
Frequency - Transition: 3MHz
Supplier Device Package: TO-3PN
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 120 W
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.94 EUR
10+2.48 EUR
100+1.98 EUR
500+1.64 EUR
1000+1.54 EUR
3000+1.44 EUR
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TIP36C TIP36C Guangdong Inmark Electronics Co., Ltd. audiotube_38.html Description: TRANS NPN -100V -25A TO-3PN
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.94 EUR
10+2.48 EUR
100+1.98 EUR
500+1.64 EUR
1000+1.54 EUR
3000+1.44 EUR
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TIP42C TIP42C Guangdong Inmark Electronics Co., Ltd. index_19.html Description: TRANS PNP 100V 6A To-220
Packaging: Tube
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-252 (DPAK)
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 65 W
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.47 EUR
11+2.07 EUR
100+1.25 EUR
500+0.87 EUR
1000+0.74 EUR
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TTA1943 TTA1943 Guangdong Inmark Electronics Co., Ltd. audiotube_49.html Description: TRANS PNP 230V 15A TO-3PL
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -40°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3PL
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 150 W
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.29 EUR
10+6.78 EUR
100+4.07 EUR
500+2.84 EUR
1000+2.44 EUR
2000+2.11 EUR
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TTC5200 TTC5200 Guangdong Inmark Electronics Co., Ltd. audiotube_50.html Description: TRANS NPN 230V 15A TO-3PL
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -40°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3PL
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 150 W
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.57 EUR
10+6.93 EUR
100+4.15 EUR
500+2.9 EUR
1000+2.48 EUR
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MOT4N70D index_144.html
MOT4N70D
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 700V 4A 3 To252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 2A, 10V
Power Dissipation (Max): 50W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.12 EUR
17+1.27 EUR
100+0.76 EUR
500+0.54 EUR
1000+0.45 EUR
2500+0.38 EUR
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MOT4N70F index_142.html
MOT4N70F
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 700V 4A 3 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 2A, 10V
Power Dissipation (Max): 30W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.53 EUR
14+1.51 EUR
100+0.9 EUR
500+0.63 EUR
1000+0.54 EUR
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MOT50N03BD trenchsgtmOS_813.html
MOT50N03BD
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 30V 50A 7.3m To-252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
Power Dissipation (Max): 40W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
20+1.05 EUR
34+0.63 EUR
100+0.38 EUR
500+0.26 EUR
1000+0.23 EUR
2500+0.19 EUR
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MOT50N03C trenchsgtmOS_811.html
MOT50N03C
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 30V 50A 7.3m To-251
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A
Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V
Power Dissipation (Max): 50W
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 12 V
auf Bestellung 4200 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
17+1.26 EUR
28+0.75 EUR
100+0.45 EUR
500+0.32 EUR
1000+0.27 EUR
4200+0.23 EUR
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MOT50N03D trenchsgtmOS_812.html
MOT50N03D
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 30V 50A 7.3m To-252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
Power Dissipation (Max): 40W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 20 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
19+1.15 EUR
31+0.69 EUR
100+0.42 EUR
500+0.29 EUR
1000+0.25 EUR
2500+0.21 EUR
Mindestbestellmenge: 19 Stücke
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MOT50N04D trenchsgtmOS_809.html
MOT50N04D
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 40V 50A 8m To-252
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
13+1.7 EUR
21+1.01 EUR
100+0.61 EUR
500+0.43 EUR
1000+0.36 EUR
2500+0.31 EUR
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MOT50N06C
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 60V 50A 13m To-251
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 75W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V
auf Bestellung 4200 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
13+1.68 EUR
21+1.01 EUR
100+0.61 EUR
500+0.43 EUR
1000+0.36 EUR
4200+0.31 EUR
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MOT50N06D trenchsgtmOS_807.html
MOT50N06D
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 60V 50A 13m To-252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 75W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
21+1.02 EUR
23+0.92 EUR
100+0.55 EUR
500+0.38 EUR
1000+0.32 EUR
2500+0.27 EUR
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MOT55N06B trenchsgtmOS_798.html
MOT55N06B
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 60V 55A m To-220
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A
Rds On (Max) @ Id, Vgs: 22mOhm @ 20A, 10V
Power Dissipation (Max): 100W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1478 pF @ 30 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.56 EUR
10+2.14 EUR
100+1.29 EUR
500+0.9 EUR
1000+0.76 EUR
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MOT5N65A index_93.html
MOT5N65A
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 5A 2.1 To220
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2.5A, 10V
Power Dissipation (Max): 75W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 631 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.76 EUR
13+1.67 EUR
100+1 EUR
500+0.7 EUR
1000+0.6 EUR
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MOT5N65F index_94.html
MOT5N65F
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 5A 2 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2.5A, 10V
Power Dissipation (Max): 30W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 628 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.37 EUR
15+1.42 EUR
100+0.84 EUR
500+0.6 EUR
1000+0.5 EUR
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MOT60N02D trenchsgtmOS_792.html
MOT60N02D
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 20V 60A 6.5m To-252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 4.5V
Power Dissipation (Max): 40W
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 10 V
Produkt ist nicht verfügbar
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MOT6111G trenchsgtmOS_500.html
MOT6111G
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 60V 226A 2m PDFN5x6
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 226A
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 20A, 10V
Power Dissipation (Max): 147W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 30 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.23 EUR
10+4.95 EUR
100+2.96 EUR
500+2.07 EUR
1000+1.76 EUR
5000+1.5 EUR
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MOT6515G trenchsgtmOS_476.html
MOT6515G
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 60V 50A 13m PDFN5x6
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 75W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.68 EUR
14+1.61 EUR
100+0.96 EUR
500+0.68 EUR
1000+0.57 EUR
5000+0.49 EUR
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MOT6522G trenchsgtmOS_471.html
MOT6522G
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 60V 35A 15m PDFN5x6
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A
Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V
Power Dissipation (Max): 42W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 612 pF @ 20 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
13+1.7 EUR
21+1.02 EUR
100+0.61 EUR
500+0.43 EUR
1000+0.37 EUR
5000+0.31 EUR
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MOT65R099KN highvoltageSJ_428.html
MOT65R099KN
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 40A 0.099 To-24
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A
Rds On (Max) @ Id, Vgs: 99mOhm @ 20A, 10V
Power Dissipation (Max): 357W
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+27.54 EUR
10+16.52 EUR
100+9.91 EUR
600+6.94 EUR
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MOT65R180HGF highvoltageSJ_427.html
MOT65R180HGF
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 20A 0.18 To-220
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+10.47 EUR
10+6.3 EUR
100+3.77 EUR
500+2.64 EUR
1000+2.25 EUR
Mindestbestellmenge: 2 Stücke
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MOT65R190HKF highvoltageSJ_267.html
MOT65R190HKF
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 20A 0.15 To-220
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Power Dissipation (Max): 37W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+16.28 EUR
10+9.76 EUR
100+5.85 EUR
500+4.09 EUR
1000+3.49 EUR
Mindestbestellmenge: 2 Stücke
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MOT70N03D trenchsgtmOS_788.html
MOT70N03D
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 30V 7A 5.5m To-252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 4.5V
Power Dissipation (Max): 53W
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1485 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
18+1.18 EUR
30+0.7 EUR
100+0.42 EUR
500+0.3 EUR
1000+0.25 EUR
2500+0.21 EUR
Mindestbestellmenge: 18 Stücke
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MOT75N75D
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 75V 75A 7.5m To-252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 115W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 30 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.21 EUR
10+2.52 EUR
100+1.51 EUR
500+1.06 EUR
1000+0.9 EUR
2500+0.76 EUR
Mindestbestellmenge: 5 Stücke
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MOT7N65AC index_105.html
MOT7N65AC
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 7A 1.12 To251
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 1.35Ohm @ 3.5A, 10V
Power Dissipation (Max): 100W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 4200 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+2.01 EUR
13+1.67 EUR
100+1 EUR
500+0.7 EUR
1000+0.6 EUR
4200+0.51 EUR
Mindestbestellmenge: 11 Stücke
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MOT7N65AD
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 7A 1.12 To252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 1.35Ohm @ 3.5A, 10V
Power Dissipation (Max): 100W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+2.01 EUR
13+1.67 EUR
100+1 EUR
500+0.7 EUR
1000+0.6 EUR
2500+0.51 EUR
Mindestbestellmenge: 11 Stücke
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MOT7N65AF
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 7A 1.12 To220F
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.25 EUR
11+1.95 EUR
100+1.17 EUR
500+0.82 EUR
1000+0.7 EUR
Mindestbestellmenge: 7 Stücke
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MOT7N70C index_147.html
MOT7N70C
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 700V 7A 1.45 To251
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 3.5A, 10V
Power Dissipation (Max): 100W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 4200 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.89 EUR
13+1.73 EUR
100+1.04 EUR
500+0.73 EUR
1000+0.62 EUR
4200+0.52 EUR
Mindestbestellmenge: 8 Stücke
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MOT7N70D index_148.html
MOT7N70D
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 700V 7A 1.45 To252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 3.5A, 10V
Power Dissipation (Max): 100W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3 EUR
12+1.8 EUR
100+1.07 EUR
500+0.75 EUR
1000+0.64 EUR
2500+0.55 EUR
Mindestbestellmenge: 7 Stücke
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MOT7N70F index_146.html
MOT7N70F
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 700V 7A 1.45 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 3.5A, 10V
Power Dissipation (Max): 38W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.22 EUR
11+1.94 EUR
100+1.17 EUR
500+0.81 EUR
1000+0.69 EUR
Mindestbestellmenge: 7 Stücke
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MOT7N80F index_158.html
MOT7N80F
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 800V 7A 1.5 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 3.5A, 10V
Power Dissipation (Max): 33W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.77 EUR
10+4.66 EUR
100+2.8 EUR
500+1.96 EUR
1000+1.67 EUR
Mindestbestellmenge: 3 Stücke
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MOT80N03C trenchsgtmOS_781.html
MOT80N03C
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 30V 80A 4m To-251
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Power Dissipation (Max): 78W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 20 V
auf Bestellung 4200 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
17+1.3 EUR
27+0.79 EUR
100+0.48 EUR
500+0.33 EUR
1000+0.29 EUR
4200+0.24 EUR
Mindestbestellmenge: 17 Stücke
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MOT80N03D trenchsgtmOS_780.html
MOT80N03D
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 30V 80A 4m To-252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Power Dissipation (Max): 78W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 20 V
auf Bestellung 2498 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
20+1.05 EUR
34+0.63 EUR
100+0.38 EUR
500+0.26 EUR
1000+0.23 EUR
Mindestbestellmenge: 20 Stücke
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MOT80N03XD
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 30V 80A 4m To-252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Power Dissipation (Max): 78W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 20 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
20+1.05 EUR
34+0.63 EUR
100+0.38 EUR
500+0.26 EUR
1000+0.23 EUR
2500+0.19 EUR
Mindestbestellmenge: 20 Stücke
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MOT8205SA6 smallsignalMOS_441.html
MOT8205SA6
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET -CH V MA SOT23
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 4.5V
Power Dissipation (Max): 1.14W
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 20 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
59+0.36 EUR
102+0.2 EUR
169+0.12 EUR
500+0.087 EUR
1000+0.074 EUR
3000+0.063 EUR
Mindestbestellmenge: 59 Stücke
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MOT8N65MD index_116.html
MOT8N65MD
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 8A 1.1 To252
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.93 EUR
12+1.75 EUR
100+1.05 EUR
500+0.74 EUR
1000+0.63 EUR
2500+0.54 EUR
Mindestbestellmenge: 8 Stücke
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MOT8N65MF
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 8A 1.1 To220F
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.39 EUR
11+2.03 EUR
100+1.21 EUR
500+0.86 EUR
1000+0.73 EUR
Mindestbestellmenge: 7 Stücke
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MOT8N80HF index_159.html
MOT8N80HF
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 800V 8A 1.35 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 4A, 10V
Power Dissipation (Max): 50W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.23 EUR
10+4.95 EUR
100+2.96 EUR
500+2.07 EUR
1000+1.76 EUR
Mindestbestellmenge: 3 Stücke
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MOT90N03D trenchsgtmOS_768.html
MOT90N03D
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 30V 90A 3.4m To-252
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
14+1.57 EUR
23+0.94 EUR
100+0.57 EUR
500+0.39 EUR
1000+0.33 EUR
2500+0.29 EUR
Mindestbestellmenge: 14 Stücke
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MOT9N50D index_18.html
MOT9N50D
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 500V 9A 0.72 To252
Packaging: Tape & Reel (TR)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A
Rds On (Max) @ Id, Vgs: 8mOhm @ 4.5A, 10V
Power Dissipation (Max): 60W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.67 EUR
14+1.61 EUR
100+0.96 EUR
500+0.68 EUR
1000+0.57 EUR
2500+0.49 EUR
Mindestbestellmenge: 8 Stücke
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MOT9N90HF index_169.html
MOT9N90HF
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 900V 9A 1.4 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 4.5A, 10V
Power Dissipation (Max): 36W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.45 EUR
10+5.66 EUR
100+3.4 EUR
500+2.38 EUR
1000+2.02 EUR
Mindestbestellmenge: 3 Stücke
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MUR1620A fastrecoverydiode_115.html
MUR1620A
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR FRD 200V 16A TO-220
Packaging: Tube
Mounting Type: Through Hole
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.94 EUR
10+2.36 EUR
100+1.42 EUR
500+0.99 EUR
1000+0.84 EUR
Mindestbestellmenge: 6 Stücke
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MUR1640A fastrecoverydiode_118.html
MUR1640A
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR FRD 400V 16A TO-220
Packaging: Tube
Mounting Type: Through Hole
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
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MUR1640F fastrecoverydiode_120.html
MUR1640F
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR FRD 400V 16A TO-220F
Packaging: Tube
Mounting Type: Through Hole
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)
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MUR2002A fastrecoverydiode_124.html
MUR2002A
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR FRD 200V 20A TO-220
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.42 EUR
11+2.05 EUR
100+1.23 EUR
500+0.86 EUR
1000+0.73 EUR
Mindestbestellmenge: 7 Stücke
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MUR2002F fastrecoverydiode_126.html
MUR2002F
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR FRD 200V 20A TO-220F
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.42 EUR
11+2.05 EUR
100+1.23 EUR
500+0.86 EUR
1000+0.73 EUR
Mindestbestellmenge: 7 Stücke
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MUR2040F fastrecoverydiode_129.html
MUR2040F
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR FRD 400V 20A TO-220F
Packaging: Tube
Mounting Type: Through Hole
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.14 EUR
12+1.89 EUR
100+1.13 EUR
500+0.8 EUR
1000+0.68 EUR
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NJW0281G audiotube_33.html
NJW0281G
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS NPN 250V 15A TO-3PB
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -50°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 0.5A, 5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 5V
Frequency - Transition: 20MHz
Supplier Device Package: TO-3PB
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 160 W
auf Bestellung 2400 Stücke:
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AnzahlPrivatkunde
2+11.94 EUR
10+7.18 EUR
100+4.32 EUR
500+3.03 EUR
1000+2.59 EUR
2400+2.2 EUR
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NJW0302G audiotube_34.html
NJW0302G
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS PNP 250V 15A TO-3PB
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -50°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 0.5A, 5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 5V
Frequency - Transition: 20MHz
Supplier Device Package: TO-3PB
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 160 W
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+12.27 EUR
10+7.37 EUR
100+4.43 EUR
600+3.09 EUR
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S8050 smallsignaltransistor_7.html
S8050
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS NPN 25V 500MA SOT-23
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 100mA, 1V
Frequency - Transition: 120MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 255 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
250+0.083 EUR
400+0.052 EUR
650+0.032 EUR
926+0.023 EUR
1090+0.019 EUR
3000+0.017 EUR
Mindestbestellmenge: 250 Stücke
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S8550 smallsignaltransistor_10.html
S8550
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS PNP 25V 500MA SOT-23
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
250+0.083 EUR
400+0.052 EUR
650+0.032 EUR
926+0.023 EUR
1090+0.019 EUR
3000+0.017 EUR
Mindestbestellmenge: 250 Stücke
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S9012 smallsignaltransistor_15.html
S9012
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS PNP 25V 500MA SOT-23
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 300 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
250+0.083 EUR
400+0.052 EUR
650+0.032 EUR
926+0.023 EUR
1090+0.019 EUR
3000+0.017 EUR
Mindestbestellmenge: 250 Stücke
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S9013 S9013_prod.pdf 5272_S9013.pdf 5399_S9013%20SOT-23.PDF
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS NPN 25V 500MA SOT-23
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 300 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
250+0.083 EUR
385+0.055 EUR
629+0.033 EUR
900+0.024 EUR
1060+0.02 EUR
3000+0.017 EUR
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S9014 5272_S9014.pdf 5399_S9014%20SOT-23.PDF S9014S20000SJ6.pdf S9014-4491.pdf GK-SOT-23_S9014-202604.pdf
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS NPN 45V 150MA SOT-23
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 225 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
250+0.083 EUR
435+0.048 EUR
741+0.029 EUR
1058+0.02 EUR
1243+0.017 EUR
3000+0.014 EUR
Mindestbestellmenge: 250 Stücke
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S9015 smallsignaltransistor_16.html
S9015
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS PNP 45V 100MA SOT-23
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 200 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
250+0.083 EUR
385+0.055 EUR
642+0.032 EUR
916+0.023 EUR
1078+0.019 EUR
3000+0.017 EUR
Mindestbestellmenge: 250 Stücke
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SS8050 smallsignaltransistor_13.html
SS8050
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS NPN 25V 1500MA SOT-23
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
200+0.1 EUR
304+0.069 EUR
506+0.042 EUR
721+0.029 EUR
1000+0.025 EUR
3000+0.021 EUR
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SS8550 smallsignaltransistor_14.html
SS8550
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS PNP 25V 1500MA SOT-23
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
200+0.1 EUR
313+0.067 EUR
530+0.039 EUR
755+0.027 EUR
1000+0.024 EUR
3000+0.02 EUR
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TIP35C audiotube_37.html
TIP35C
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS NPN 100V 25A
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -40°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 25A, 5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1.5A, 5V
Frequency - Transition: 3MHz
Supplier Device Package: TO-3PN
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 120 W
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.94 EUR
10+2.48 EUR
100+1.98 EUR
500+1.64 EUR
1000+1.54 EUR
3000+1.44 EUR
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TIP36C audiotube_38.html
TIP36C
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS NPN -100V -25A TO-3PN
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.94 EUR
10+2.48 EUR
100+1.98 EUR
500+1.64 EUR
1000+1.54 EUR
3000+1.44 EUR
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TIP42C index_19.html
TIP42C
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS PNP 100V 6A To-220
Packaging: Tube
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-252 (DPAK)
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 65 W
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.47 EUR
11+2.07 EUR
100+1.25 EUR
500+0.87 EUR
1000+0.74 EUR
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TTA1943 audiotube_49.html
TTA1943
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS PNP 230V 15A TO-3PL
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -40°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3PL
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 150 W
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+11.29 EUR
10+6.78 EUR
100+4.07 EUR
500+2.84 EUR
1000+2.44 EUR
2000+2.11 EUR
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TTC5200 audiotube_50.html
TTC5200
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS NPN 230V 15A TO-3PL
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -40°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3PL
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 150 W
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+11.57 EUR
10+6.93 EUR
100+4.15 EUR
500+2.9 EUR
1000+2.48 EUR
Mindestbestellmenge: 2 Stücke
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