Produkte > GUANGDONG INMARK ELECTRONICS CO., LTD. > Alle Produkte des Herstellers GUANGDONG INMARK ELECTRONICS CO., LTD. (289) > Seite 5 nach 5
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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| MOT65R380F | Guangdong Inmark Electronics Co., Ltd. | Description: MOSFET N-CH 650V 11A 0.35 To-220 |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT65R850D | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 650V 4A 0.83 To-252 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT70N03D | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 30V 7A 5.5m To-252Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 4.5V Power Dissipation (Max): 53W Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: TO-252 (DPAK) Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1485 pF @ 25 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| MOT70R280HF | Guangdong Inmark Electronics Co., Ltd. | Description: MOSFET N-CH 700V 15A 0.30 To-220 |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT70R380D | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 700V 11A 0.32 To-252 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT70R380F | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 700V 11A 0.32 To-220 |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MOT75N75D | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 75V 75A 7.5m To-252 Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V Power Dissipation (Max): 115W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 30 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT7N65AC | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 650V 7A 1.12 To251Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 1.35Ohm @ 3.5A, 10V Power Dissipation (Max): 100W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-251 (IPAK) Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V |
auf Bestellung 4200 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT7N65AD | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 650V 7A 1.12 To252 Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 1.35Ohm @ 3.5A, 10V Power Dissipation (Max): 100W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT7N65AF | Guangdong Inmark Electronics Co., Ltd. | Description: MOSFET N-CH 650V 7A 1.12 To220F |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT7N70C | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 700V 7A 1.45 To251Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 1.7Ohm @ 3.5A, 10V Power Dissipation (Max): 100W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-251 (IPAK) Vgs (Max): ±30V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V |
auf Bestellung 4200 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT7N70D | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 700V 7A 1.45 To252Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 1.7Ohm @ 3.5A, 10V Power Dissipation (Max): 100W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Vgs (Max): ±30V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT7N70F | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 700V 7A 1.45 To220FPackaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 1.7Ohm @ 3.5A, 10V Power Dissipation (Max): 38W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F Vgs (Max): ±30V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT7N80F | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 800V 7A 1.5 To220FPackaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 1.7Ohm @ 3.5A, 10V Power Dissipation (Max): 33W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT80N03C | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 30V 80A 4m To-251Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V Power Dissipation (Max): 78W Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-251 (IPAK) Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 20 V |
auf Bestellung 4200 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT80N03D | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 30V 80A 4m To-252Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V Power Dissipation (Max): 78W Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 20 V |
auf Bestellung 2498 Stücke: Lieferzeit 10-14 Tag (e) |
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| MOT80N03XD | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 30V 80A 4m To-252 Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V Power Dissipation (Max): 78W Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 20 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT80N06C | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 60V 80A 6m To-251 |
auf Bestellung 4200 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT80N06D | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 60V 80A 6m To-252 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT80P03D | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET P-CH 30V 80A 4.7m To-252 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| MOT8156D | Guangdong Inmark Electronics Co., Ltd. | Description: MOSFET N-CH 100V 120A 4.7m To-2 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT8205SA6 | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET -CH V MA SOT23Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 4.5V Power Dissipation (Max): 1.14W Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23 Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 20 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT8N65MD | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 650V 8A 1.1 To252 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| MOT8N65MF | Guangdong Inmark Electronics Co., Ltd. | Description: MOSFET N-CH 650V 8A 1.1 To220F |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT8N80HF | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 800V 8A 1.35 To220FPackaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 1.5Ohm @ 4A, 10V Power Dissipation (Max): 50W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT90N03D | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 30V 90A 3.4m To-252 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT90N06A | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 60V 90A 6.7m To-220 |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT9N50D | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 500V 9A 0.72 To252Packaging: Tape & Reel (TR) Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A Rds On (Max) @ Id, Vgs: 8mOhm @ 4.5A, 10V Power Dissipation (Max): 60W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT9N90HF | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 900V 9A 1.4 To220FPackaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A Rds On (Max) @ Id, Vgs: 1.2Ohm @ 4.5A, 10V Power Dissipation (Max): 36W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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MUR1620A | Guangdong Inmark Electronics Co., Ltd. |
Description: DIODE ARR FRD 200V 16A TO-220Packaging: Tube Mounting Type: Through Hole Reverse Recovery Time (trr): 35 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 16A Supplier Device Package: TO-220 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUR1640A | Guangdong Inmark Electronics Co., Ltd. |
Description: DIODE ARR FRD 400V 16A TO-220 Packaging: Tube Mounting Type: Through Hole Reverse Recovery Time (trr): 35 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 16A Supplier Device Package: TO-220 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUR1640F | Guangdong Inmark Electronics Co., Ltd. |
Description: DIODE ARR FRD 400V 16A TO-220F Packaging: Tube Mounting Type: Through Hole Reverse Recovery Time (trr): 35 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 16A Supplier Device Package: TO-220F Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
auf Bestellung 900 Stücke: Lieferzeit 10-14 Tag (e) |
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MUR2002A | Guangdong Inmark Electronics Co., Ltd. |
Description: DIODE ARR FRD 200V 20A TO-220 |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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MUR2002F | Guangdong Inmark Electronics Co., Ltd. |
Description: DIODE ARR FRD 200V 20A TO-220F |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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MUR2040F | Guangdong Inmark Electronics Co., Ltd. |
Description: DIODE ARR FRD 400V 20A TO-220FPackaging: Tube Mounting Type: Through Hole Reverse Recovery Time (trr): 35 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-220F Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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S8050 | Guangdong Inmark Electronics Co., Ltd. |
Description: TRANS NPN 25V 500MA SOT-23 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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S8550 | Guangdong Inmark Electronics Co., Ltd. |
Description: TRANS PNP 25V 500MA SOT-23 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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S9012 | Guangdong Inmark Electronics Co., Ltd. |
Description: TRANS PNP 25V 500MA SOT-23Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 1V Frequency - Transition: 150MHz Supplier Device Package: SOT-23 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 300 mW |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| S9013 | Guangdong Inmark Electronics Co., Ltd. |
Description: TRANS NPN 25V 500MA SOT-23Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 1V Frequency - Transition: 150MHz Supplier Device Package: SOT-23 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 300 mW |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| S9014 | Guangdong Inmark Electronics Co., Ltd. |
Description: TRANS NPN 45V 150MA SOT-23Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V Frequency - Transition: 150MHz Supplier Device Package: SOT-23 Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 225 mW |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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S9015 | Guangdong Inmark Electronics Co., Ltd. |
Description: TRANS PNP 45V 100MA SOT-23Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V Frequency - Transition: 150MHz Supplier Device Package: SOT-23 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 200 mW |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SS8050 | Guangdong Inmark Electronics Co., Ltd. |
Description: TRANS NPN 25V 1500MA SOT-23 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SS8550 | Guangdong Inmark Electronics Co., Ltd. |
Description: TRANS PNP 25V 1500MA SOT-23 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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TIP35C | Guangdong Inmark Electronics Co., Ltd. |
Description: TRANS NPN 100V 25A |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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TIP36C | Guangdong Inmark Electronics Co., Ltd. |
Description: TRANS NPN -100V -25A TO-3PN |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TIP41C | Guangdong Inmark Electronics Co., Ltd. |
Description: TRANS NPN 100V 6A To-220 |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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TIP42C | Guangdong Inmark Electronics Co., Ltd. |
Description: TRANS PNP 100V 6A To-220Packaging: Tube Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A Current - Collector Cutoff (Max): 700µA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V Frequency - Transition: 3MHz Supplier Device Package: TO-252 (DPAK) Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 65 W |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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TTA1943 | Guangdong Inmark Electronics Co., Ltd. |
Description: TRANS PNP 230V 15A TO-3PLPackaging: Tube Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -40°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V Frequency - Transition: 30MHz Supplier Device Package: TO-3PL Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 230 V Power - Max: 150 W |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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TTC5200 | Guangdong Inmark Electronics Co., Ltd. |
Description: TRANS NPN 230V 15A TO-3PLPackaging: Tube Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -40°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V Frequency - Transition: 30MHz Supplier Device Package: TO-3PL Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 230 V Power - Max: 150 W |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MOT65R380F |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 11A 0.35 To-220
Description: MOSFET N-CH 650V 11A 0.35 To-220
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.16 EUR |
| 10+ | 4.31 EUR |
| 100+ | 2.58 EUR |
| 500+ | 1.81 EUR |
| 1000+ | 1.54 EUR |
| MOT65R850D |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 4A 0.83 To-252
Description: MOSFET N-CH 650V 4A 0.83 To-252
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.24 EUR |
| 10+ | 2.55 EUR |
| 100+ | 1.52 EUR |
| 500+ | 1.07 EUR |
| 1000+ | 0.9 EUR |
| 2500+ | 0.77 EUR |
| MOT70N03D |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 30V 7A 5.5m To-252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 4.5V
Power Dissipation (Max): 53W
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1485 pF @ 25 V
Description: MOSFET N-CH 30V 7A 5.5m To-252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 4.5V
Power Dissipation (Max): 53W
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1485 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 18+ | 1.21 EUR |
| 29+ | 0.73 EUR |
| 100+ | 0.43 EUR |
| 500+ | 0.3 EUR |
| 1000+ | 0.26 EUR |
| 2500+ | 0.21 EUR |
| MOT70R280HF |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 700V 15A 0.30 To-220
Description: MOSFET N-CH 700V 15A 0.30 To-220
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 12.65 EUR |
| 10+ | 7.6 EUR |
| 100+ | 4.56 EUR |
| 500+ | 3.19 EUR |
| 1000+ | 2.71 EUR |
| MOT70R380D |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 700V 11A 0.32 To-252
Description: MOSFET N-CH 700V 11A 0.32 To-252
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.72 EUR |
| 10+ | 4.64 EUR |
| 100+ | 2.78 EUR |
| 500+ | 1.95 EUR |
| 1000+ | 1.65 EUR |
| 2500+ | 1.4 EUR |
| MOT70R380F |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 700V 11A 0.32 To-220
Description: MOSFET N-CH 700V 11A 0.32 To-220
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.43 EUR |
| 10+ | 5.03 EUR |
| 100+ | 3.02 EUR |
| 500+ | 2.12 EUR |
| 1000+ | 1.8 EUR |
| MOT75N75D |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 75V 75A 7.5m To-252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 115W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 30 V
Description: MOSFET N-CH 75V 75A 7.5m To-252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 115W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 30 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.19 EUR |
| 10+ | 2.51 EUR |
| 100+ | 1.51 EUR |
| 500+ | 1.06 EUR |
| 1000+ | 0.89 EUR |
| 2500+ | 0.76 EUR |
| MOT7N65AC |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 7A 1.12 To251
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 1.35Ohm @ 3.5A, 10V
Power Dissipation (Max): 100W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Description: MOSFET N-CH 650V 7A 1.12 To251
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 1.35Ohm @ 3.5A, 10V
Power Dissipation (Max): 100W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 4200 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 1.96 EUR |
| 13+ | 1.63 EUR |
| 100+ | 0.98 EUR |
| 500+ | 0.68 EUR |
| 1000+ | 0.58 EUR |
| 4200+ | 0.5 EUR |
| MOT7N65AD |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 7A 1.12 To252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 1.35Ohm @ 3.5A, 10V
Power Dissipation (Max): 100W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Description: MOSFET N-CH 650V 7A 1.12 To252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 1.35Ohm @ 3.5A, 10V
Power Dissipation (Max): 100W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 1.95 EUR |
| 13+ | 1.63 EUR |
| 100+ | 0.98 EUR |
| 500+ | 0.68 EUR |
| 1000+ | 0.58 EUR |
| 2500+ | 0.5 EUR |
| MOT7N65AF |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 7A 1.12 To220F
Description: MOSFET N-CH 650V 7A 1.12 To220F
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.19 EUR |
| 11+ | 1.9 EUR |
| 100+ | 1.14 EUR |
| 500+ | 0.8 EUR |
| 1000+ | 0.68 EUR |
| MOT7N70C |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 700V 7A 1.45 To251
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 3.5A, 10V
Power Dissipation (Max): 100W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Description: MOSFET N-CH 700V 7A 1.45 To251
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 3.5A, 10V
Power Dissipation (Max): 100W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 4200 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.89 EUR |
| 13+ | 1.73 EUR |
| 100+ | 1.04 EUR |
| 500+ | 0.73 EUR |
| 1000+ | 0.62 EUR |
| 4200+ | 0.52 EUR |
| MOT7N70D |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 700V 7A 1.45 To252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 3.5A, 10V
Power Dissipation (Max): 100W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Description: MOSFET N-CH 700V 7A 1.45 To252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 3.5A, 10V
Power Dissipation (Max): 100W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3 EUR |
| 12+ | 1.8 EUR |
| 100+ | 1.07 EUR |
| 500+ | 0.75 EUR |
| 1000+ | 0.64 EUR |
| 2500+ | 0.55 EUR |
| MOT7N70F |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 700V 7A 1.45 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 3.5A, 10V
Power Dissipation (Max): 38W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Description: MOSFET N-CH 700V 7A 1.45 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 3.5A, 10V
Power Dissipation (Max): 38W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.22 EUR |
| 11+ | 1.94 EUR |
| 100+ | 1.17 EUR |
| 500+ | 0.81 EUR |
| 1000+ | 0.69 EUR |
| MOT7N80F |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 800V 7A 1.5 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 3.5A, 10V
Power Dissipation (Max): 33W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Description: MOSFET N-CH 800V 7A 1.5 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 3.5A, 10V
Power Dissipation (Max): 33W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.07 EUR |
| 10+ | 4.83 EUR |
| 100+ | 2.9 EUR |
| 500+ | 2.03 EUR |
| 1000+ | 1.73 EUR |
| MOT80N03C |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 30V 80A 4m To-251
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Power Dissipation (Max): 78W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 20 V
Description: MOSFET N-CH 30V 80A 4m To-251
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Power Dissipation (Max): 78W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 20 V
auf Bestellung 4200 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 17+ | 1.3 EUR |
| 27+ | 0.79 EUR |
| 100+ | 0.48 EUR |
| 500+ | 0.33 EUR |
| 1000+ | 0.29 EUR |
| 4200+ | 0.24 EUR |
| MOT80N03D |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 30V 80A 4m To-252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Power Dissipation (Max): 78W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 20 V
Description: MOSFET N-CH 30V 80A 4m To-252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Power Dissipation (Max): 78W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 20 V
auf Bestellung 2498 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 1.05 EUR |
| 34+ | 0.63 EUR |
| 100+ | 0.38 EUR |
| 500+ | 0.26 EUR |
| 1000+ | 0.23 EUR |
| MOT80N03XD |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 30V 80A 4m To-252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Power Dissipation (Max): 78W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 20 V
Description: MOSFET N-CH 30V 80A 4m To-252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Power Dissipation (Max): 78W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 20 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 1.05 EUR |
| 34+ | 0.63 EUR |
| 100+ | 0.38 EUR |
| 500+ | 0.26 EUR |
| 1000+ | 0.23 EUR |
| 2500+ | 0.19 EUR |
| MOT80N06C |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 60V 80A 6m To-251
Description: MOSFET N-CH 60V 80A 6m To-251
auf Bestellung 4200 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.98 EUR |
| 12+ | 1.78 EUR |
| 100+ | 1.07 EUR |
| 500+ | 0.75 EUR |
| 1000+ | 0.63 EUR |
| 4200+ | 0.54 EUR |
| MOT80N06D |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 60V 80A 6m To-252
Description: MOSFET N-CH 60V 80A 6m To-252
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.81 EUR |
| 13+ | 1.69 EUR |
| 100+ | 1.01 EUR |
| 500+ | 0.71 EUR |
| 1000+ | 0.61 EUR |
| 2500+ | 0.51 EUR |
| MOT80P03D |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET P-CH 30V 80A 4.7m To-252
Description: MOSFET P-CH 30V 80A 4.7m To-252
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.03 EUR |
| 12+ | 1.82 EUR |
| 100+ | 1.09 EUR |
| 500+ | 0.76 EUR |
| 1000+ | 0.65 EUR |
| 2500+ | 0.55 EUR |
| MOT8156D |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 100V 120A 4.7m To-2
Description: MOSFET N-CH 100V 120A 4.7m To-2
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.28 EUR |
| 10+ | 3.77 EUR |
| 100+ | 2.26 EUR |
| 500+ | 1.58 EUR |
| 1000+ | 1.34 EUR |
| 2500+ | 1.14 EUR |
| MOT8205SA6 |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET -CH V MA SOT23
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 4.5V
Power Dissipation (Max): 1.14W
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 20 V
Description: MOSFET -CH V MA SOT23
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 4.5V
Power Dissipation (Max): 1.14W
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 20 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 59+ | 0.36 EUR |
| 102+ | 0.2 EUR |
| 169+ | 0.12 EUR |
| 500+ | 0.087 EUR |
| 1000+ | 0.074 EUR |
| 3000+ | 0.063 EUR |
| MOT8N65MD |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 8A 1.1 To252
Description: MOSFET N-CH 650V 8A 1.1 To252
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3 EUR |
| 12+ | 1.78 EUR |
| 100+ | 1.07 EUR |
| 500+ | 0.75 EUR |
| 1000+ | 0.64 EUR |
| 2500+ | 0.55 EUR |
| MOT8N65MF |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 8A 1.1 To220F
Description: MOSFET N-CH 650V 8A 1.1 To220F
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.45 EUR |
| 11+ | 2.07 EUR |
| 100+ | 1.24 EUR |
| 500+ | 0.87 EUR |
| 1000+ | 0.74 EUR |
| MOT8N80HF |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 800V 8A 1.35 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 4A, 10V
Power Dissipation (Max): 50W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Description: MOSFET N-CH 800V 8A 1.35 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 4A, 10V
Power Dissipation (Max): 50W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.23 EUR |
| 10+ | 4.95 EUR |
| 100+ | 2.96 EUR |
| 500+ | 2.07 EUR |
| 1000+ | 1.76 EUR |
| MOT90N03D |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 30V 90A 3.4m To-252
Description: MOSFET N-CH 30V 90A 3.4m To-252
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14+ | 1.57 EUR |
| 23+ | 0.94 EUR |
| 100+ | 0.56 EUR |
| 500+ | 0.39 EUR |
| 1000+ | 0.33 EUR |
| 2500+ | 0.29 EUR |
| MOT90N06A |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 60V 90A 6.7m To-220
Description: MOSFET N-CH 60V 90A 6.7m To-220
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.58 EUR |
| 10+ | 2.76 EUR |
| 100+ | 1.65 EUR |
| 500+ | 1.17 EUR |
| 1000+ | 0.99 EUR |
| MOT9N50D |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 500V 9A 0.72 To252
Packaging: Tape & Reel (TR)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A
Rds On (Max) @ Id, Vgs: 8mOhm @ 4.5A, 10V
Power Dissipation (Max): 60W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Description: MOSFET N-CH 500V 9A 0.72 To252
Packaging: Tape & Reel (TR)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A
Rds On (Max) @ Id, Vgs: 8mOhm @ 4.5A, 10V
Power Dissipation (Max): 60W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.7 EUR |
| 13+ | 1.63 EUR |
| 100+ | 0.98 EUR |
| 500+ | 0.68 EUR |
| 1000+ | 0.58 EUR |
| 2500+ | 0.5 EUR |
| MOT9N90HF |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 900V 9A 1.4 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 4.5A, 10V
Power Dissipation (Max): 36W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Description: MOSFET N-CH 900V 9A 1.4 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 4.5A, 10V
Power Dissipation (Max): 36W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.4 EUR |
| 10+ | 5.65 EUR |
| 100+ | 3.39 EUR |
| 500+ | 2.37 EUR |
| 1000+ | 2.02 EUR |
| MUR1620A |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR FRD 200V 16A TO-220
Packaging: Tube
Mounting Type: Through Hole
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE ARR FRD 200V 16A TO-220
Packaging: Tube
Mounting Type: Through Hole
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.92 EUR |
| 10+ | 2.36 EUR |
| 100+ | 1.42 EUR |
| 500+ | 0.99 EUR |
| 1000+ | 0.84 EUR |
| MUR1640A |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR FRD 400V 16A TO-220
Packaging: Tube
Mounting Type: Through Hole
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE ARR FRD 400V 16A TO-220
Packaging: Tube
Mounting Type: Through Hole
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.19 EUR |
| 11+ | 1.92 EUR |
| 100+ | 1.15 EUR |
| 500+ | 0.81 EUR |
| 1000+ | 0.68 EUR |
| MUR1640F |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR FRD 400V 16A TO-220F
Packaging: Tube
Mounting Type: Through Hole
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE ARR FRD 400V 16A TO-220F
Packaging: Tube
Mounting Type: Through Hole
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.93 EUR |
| 12+ | 1.76 EUR |
| 100+ | 1.06 EUR |
| 500+ | 0.74 EUR |
| MUR2002A |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR FRD 200V 20A TO-220
Description: DIODE ARR FRD 200V 20A TO-220
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.42 EUR |
| 11+ | 2.05 EUR |
| 100+ | 1.23 EUR |
| 500+ | 0.86 EUR |
| 1000+ | 0.73 EUR |
| MUR2002F |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR FRD 200V 20A TO-220F
Description: DIODE ARR FRD 200V 20A TO-220F
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.42 EUR |
| 11+ | 2.05 EUR |
| 100+ | 1.23 EUR |
| 500+ | 0.86 EUR |
| 1000+ | 0.73 EUR |
| MUR2040F |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR FRD 400V 20A TO-220F
Packaging: Tube
Mounting Type: Through Hole
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE ARR FRD 400V 20A TO-220F
Packaging: Tube
Mounting Type: Through Hole
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.14 EUR |
| 12+ | 1.89 EUR |
| 100+ | 1.13 EUR |
| 500+ | 0.8 EUR |
| 1000+ | 0.68 EUR |
| S8050 |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS NPN 25V 500MA SOT-23
Description: TRANS NPN 25V 500MA SOT-23
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 250+ | 0.083 EUR |
| 400+ | 0.052 EUR |
| 663+ | 0.032 EUR |
| 949+ | 0.023 EUR |
| 1117+ | 0.019 EUR |
| 3000+ | 0.015 EUR |
| S8550 |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS PNP 25V 500MA SOT-23
Description: TRANS PNP 25V 500MA SOT-23
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 250+ | 0.083 EUR |
| 400+ | 0.052 EUR |
| 663+ | 0.032 EUR |
| 949+ | 0.023 EUR |
| 1117+ | 0.019 EUR |
| 3000+ | 0.015 EUR |
| S9012 |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS PNP 25V 500MA SOT-23
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 300 mW
Description: TRANS PNP 25V 500MA SOT-23
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 300 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 250+ | 0.083 EUR |
| 400+ | 0.052 EUR |
| 663+ | 0.032 EUR |
| 949+ | 0.023 EUR |
| 1117+ | 0.019 EUR |
| 3000+ | 0.015 EUR |
| S9013 |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS NPN 25V 500MA SOT-23
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 300 mW
Description: TRANS NPN 25V 500MA SOT-23
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 300 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 250+ | 0.083 EUR |
| 385+ | 0.055 EUR |
| 646+ | 0.032 EUR |
| 921+ | 0.023 EUR |
| 1085+ | 0.019 EUR |
| 3000+ | 0.017 EUR |
| S9014 |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS NPN 45V 150MA SOT-23
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 225 mW
Description: TRANS NPN 45V 150MA SOT-23
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 225 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 334+ | 0.063 EUR |
| 435+ | 0.048 EUR |
| 741+ | 0.029 EUR |
| 1060+ | 0.02 EUR |
| 1246+ | 0.017 EUR |
| 3000+ | 0.014 EUR |
| S9015 |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS PNP 45V 100MA SOT-23
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 200 mW
Description: TRANS PNP 45V 100MA SOT-23
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 200 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 250+ | 0.083 EUR |
| 385+ | 0.055 EUR |
| 642+ | 0.032 EUR |
| 918+ | 0.023 EUR |
| 1080+ | 0.019 EUR |
| 3000+ | 0.017 EUR |
| SS8050 |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS NPN 25V 1500MA SOT-23
Description: TRANS NPN 25V 1500MA SOT-23
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 200+ | 0.1 EUR |
| 304+ | 0.069 EUR |
| 519+ | 0.04 EUR |
| 738+ | 0.029 EUR |
| 1000+ | 0.024 EUR |
| 3000+ | 0.02 EUR |
| SS8550 |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS PNP 25V 1500MA SOT-23
Description: TRANS PNP 25V 1500MA SOT-23
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 200+ | 0.1 EUR |
| 323+ | 0.065 EUR |
| 541+ | 0.039 EUR |
| 773+ | 0.027 EUR |
| 1000+ | 0.023 EUR |
| 3000+ | 0.019 EUR |
| TIP35C |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS NPN 100V 25A
Description: TRANS NPN 100V 25A
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.86 EUR |
| 10+ | 2.42 EUR |
| 100+ | 1.93 EUR |
| 500+ | 1.61 EUR |
| 1000+ | 1.5 EUR |
| 3000+ | 1.4 EUR |
| TIP36C |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS NPN -100V -25A TO-3PN
Description: TRANS NPN -100V -25A TO-3PN
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.86 EUR |
| 10+ | 2.42 EUR |
| 100+ | 1.93 EUR |
| 500+ | 1.61 EUR |
| 1000+ | 1.5 EUR |
| 3000+ | 1.4 EUR |
| TIP41C |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS NPN 100V 6A To-220
Description: TRANS NPN 100V 6A To-220
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.45 EUR |
| 11+ | 2.07 EUR |
| 100+ | 1.24 EUR |
| 500+ | 0.87 EUR |
| 1000+ | 0.74 EUR |
| TIP42C |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS PNP 100V 6A To-220
Packaging: Tube
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-252 (DPAK)
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 65 W
Description: TRANS PNP 100V 6A To-220
Packaging: Tube
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-252 (DPAK)
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 65 W
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.39 EUR |
| 11+ | 2.02 EUR |
| 100+ | 1.21 EUR |
| 500+ | 0.86 EUR |
| 1000+ | 0.73 EUR |
| TTA1943 |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS PNP 230V 15A TO-3PL
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -40°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3PL
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 150 W
Description: TRANS PNP 230V 15A TO-3PL
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -40°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3PL
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 150 W
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 11.29 EUR |
| 10+ | 6.78 EUR |
| 100+ | 4.07 EUR |
| 500+ | 2.84 EUR |
| 1000+ | 2.44 EUR |
| 2000+ | 2.11 EUR |
| TTC5200 |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS NPN 230V 15A TO-3PL
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -40°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3PL
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 150 W
Description: TRANS NPN 230V 15A TO-3PL
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -40°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3PL
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 150 W
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 11.04 EUR |
| 10+ | 6.63 EUR |
| 100+ | 3.97 EUR |
| 500+ | 2.78 EUR |
| 1000+ | 2.38 EUR |
| 2000+ | 2.06 EUR |








