Produkte > GUANGDONG INMARK ELECTRONICS CO., LTD. > Alle Produkte des Herstellers GUANGDONG INMARK ELECTRONICS CO., LTD. (325) > Seite 5 nach 6
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MOT4618D | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N+P-CH 40V 28A/-25A 16mPackaging: Tape & Reel (TR) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 38W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 28A Input Capacitance (Ciss) (Max) @ Vds: 1082pF @ 20V Rds On (Max) @ Id, Vgs: 22mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 22.9nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT4633S | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N+P-CH 40V 15A 16m SOP-8 |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT4656S | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N+P-CH 40V 8A/-6v 23m SO |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT4712J | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET P-CH 40V 30A 10m PDFN3x3 |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT4712S | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET P-CH 40V 30A 11m SOP-8 |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT4733J | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET P-CH 40V 15A 33m PDFN3x3Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 15A Rds On (Max) @ Id, Vgs: 35mOhm @ 10A, 4.5V Power Dissipation (Max): 25W Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (3x3) Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 928 pF @ 20 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT4N65C | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 650V 4A 2.3 To251 |
auf Bestellung 4200 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT4N65D | Guangdong Inmark Electronics Co., Ltd. | Description: MOSFET N-CH 650V 4A 2.3 To252 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT4N65F | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 650V 4A 2.3 To220F Packaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 2.8Ohm @ 2A, 10V Power Dissipation (Max): 30W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT4N65T | Guangdong Inmark Electronics Co., Ltd. | Description: MOSFET N-CH 650V 4A 2.4m Toll-8 |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT4N70D | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 700V 4A 3 To252Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 3.4Ohm @ 2A, 10V Power Dissipation (Max): 50W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Vgs (Max): ±30V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 25 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT4N70F | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 700V 4A 3 To220FPackaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 3.4Ohm @ 2A, 10V Power Dissipation (Max): 30W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F Vgs (Max): ±30V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 25 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT50N03BD | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 30V 50A 7.3m To-252Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V Power Dissipation (Max): 40W Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 32.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT50N03C | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 30V 50A 7.3m To-251Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V Power Dissipation (Max): 50W Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-251 (IPAK) Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 12 V |
auf Bestellung 4200 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT50N03D | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 30V 50A 7.3m To-252Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V Power Dissipation (Max): 40W Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 32.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 20 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT50N04D | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 40V 50A 8m To-252 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT50N06C | Guangdong Inmark Electronics Co., Ltd. | Description: MOSFET N-CH 60V 50A 13m To-251 |
auf Bestellung 4200 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT50N06D | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 60V 50A 13m To-252 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT50P06D | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET P-CH 60V 50A 13m To-252 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT55N06B | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 60V 55A m To-220Packaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A Rds On (Max) @ Id, Vgs: 22mOhm @ 20A, 10V Power Dissipation (Max): 100W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1478 pF @ 30 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT5N60F | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 600V 5A 2 To220F |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT5N65A | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 650V 5A 2.1 To220Packaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2.5A, 10V Power Dissipation (Max): 75W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 631 pF @ 25 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT5N65F | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 650V 5A 2 To220FPackaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2.5A, 10V Power Dissipation (Max): 30W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 628 pF @ 25 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT60N02D | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 20V 60A 6.5m To-252Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 4.5V Power Dissipation (Max): 40W Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: TO-252 (DPAK) Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 10 V |
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MOT6111G | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 60V 226A 2m PDFN5x6Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 226A Rds On (Max) @ Id, Vgs: 2.4mOhm @ 20A, 10V Power Dissipation (Max): 147W Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5x6) Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 30 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT6113HT | Guangdong Inmark Electronics Co., Ltd. | Description: MOSFET N-CH 60V 318A 1.25m Toll- |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT6515G | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 60V 50A 13m PDFN5x6Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Power Dissipation (Max): 75W Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5x6) Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT6515J | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 60V 50A 13m PDFN3x3 |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT6522G | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 60V 35A 15m PDFN5x6Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V Power Dissipation (Max): 42W Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5x6) Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 612 pF @ 20 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT6522J | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 60V 35A 17m PDFN3x3 |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT6568J | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 60V 5A 57m PDFN3x3 |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT65R099KN | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 650V 40A 0.099 To-24Packaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A Rds On (Max) @ Id, Vgs: 99mOhm @ 20A, 10V Power Dissipation (Max): 357W Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-247 Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V |
auf Bestellung 600 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT65R180HGF | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 650V 20A 0.18 To-220 |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT65R190HKF | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 650V 20A 0.15 To-220Packaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V Power Dissipation (Max): 37W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT65R280D | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 650V 15A 300 MOHM |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| MOT65R280F | Guangdong Inmark Electronics Co., Ltd. | Description: MOSFET N-CH 650V 15A 0.30 To-220 |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT65R380D | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 650V 11A 0.35 To-252 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT65R380F | Guangdong Inmark Electronics Co., Ltd. | Description: MOSFET N-CH 650V 11A 0.35 To-220 |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT65R850D | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 650V 4A 0.83 To-252 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT70N03D | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 30V 7A 5.5m To-252Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 4.5V Power Dissipation (Max): 53W Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: TO-252 (DPAK) Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1485 pF @ 25 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| MOT70R280HF | Guangdong Inmark Electronics Co., Ltd. | Description: MOSFET N-CH 700V 15A 0.30 To-220 |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT70R380D | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 700V 11A 0.32 To-252 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT70R380F | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 700V 11A 0.32 To-220 |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MOT75N75D | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 75V 75A 7.5m To-252 Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V Power Dissipation (Max): 115W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 30 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT7N65AC | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 650V 7A 1.12 To251Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 1.35Ohm @ 3.5A, 10V Power Dissipation (Max): 100W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-251 (IPAK) Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V |
auf Bestellung 4200 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT7N65AD | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 650V 7A 1.12 To252 Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 1.35Ohm @ 3.5A, 10V Power Dissipation (Max): 100W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT7N70C | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 700V 7A 1.45 To251Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 1.7Ohm @ 3.5A, 10V Power Dissipation (Max): 100W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-251 (IPAK) Vgs (Max): ±30V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V |
auf Bestellung 4200 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT7N70D | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 700V 7A 1.45 To252Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 1.7Ohm @ 3.5A, 10V Power Dissipation (Max): 100W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Vgs (Max): ±30V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT7N70F | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 700V 7A 1.45 To220FPackaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 1.7Ohm @ 3.5A, 10V Power Dissipation (Max): 38W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F Vgs (Max): ±30V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT7N80F | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 800V 7A 1.5 To220FPackaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 1.7Ohm @ 3.5A, 10V Power Dissipation (Max): 33W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT80N03C | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 30V 80A 4m To-251Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V Power Dissipation (Max): 78W Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-251 (IPAK) Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 20 V |
auf Bestellung 4200 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT80N03D | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 30V 80A 4m To-252Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V Power Dissipation (Max): 78W Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 20 V |
auf Bestellung 2498 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT80N03XD | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 30V 80A 4m To-252 Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V Power Dissipation (Max): 78W Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 20 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT80N06C | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 60V 80A 6m To-251 |
auf Bestellung 4200 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT80N06D | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 60V 80A 6m To-252 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT80P03D | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET P-CH 30V 80A 4.7m To-252 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT8113T | Guangdong Inmark Electronics Co., Ltd. | Description: MOSFET N-CH 85V 300A 1.1m Toll-8 |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT8156D | Guangdong Inmark Electronics Co., Ltd. | Description: MOSFET N-CH 100V 120A 4.7m To-2 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT8156T | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 100V 163A 3.8m Toll- |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT8205SA6 | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET -CH V MA SOT23Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 4.5V Power Dissipation (Max): 1.14W Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23 Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 20 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MOT4618D |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N+P-CH 40V 28A/-25A 16m
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 38W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 28A
Input Capacitance (Ciss) (Max) @ Vds: 1082pF @ 20V
Rds On (Max) @ Id, Vgs: 22mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.9nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Description: MOSFET N+P-CH 40V 28A/-25A 16m
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 38W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 28A
Input Capacitance (Ciss) (Max) @ Vds: 1082pF @ 20V
Rds On (Max) @ Id, Vgs: 22mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.9nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.43 EUR |
| 15+ | 1.46 EUR |
| 100+ | 0.88 EUR |
| 500+ | 0.62 EUR |
| 1000+ | 0.52 EUR |
| 2500+ | 0.44 EUR |
| MOT4633S |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N+P-CH 40V 15A 16m SOP-8
Description: MOSFET N+P-CH 40V 15A 16m SOP-8
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 1.88 EUR |
| 19+ | 1.13 EUR |
| 100+ | 0.68 EUR |
| 500+ | 0.48 EUR |
| 1000+ | 0.4 EUR |
| 4000+ | 0.35 EUR |
| MOT4656S |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N+P-CH 40V 8A/-6v 23m SO
Description: MOSFET N+P-CH 40V 8A/-6v 23m SO
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 23+ | 46.78 EUR |
| 37+ | 5.15 EUR |
| 100+ | 0.8 EUR |
| 500+ | 0.33 EUR |
| 1000+ | 0.25 EUR |
| 4000+ | 0.19 EUR |
| MOT4712J |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET P-CH 40V 30A 10m PDFN3x3
Description: MOSFET P-CH 40V 30A 10m PDFN3x3
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.4 EUR |
| 15+ | 1.44 EUR |
| 100+ | 0.87 EUR |
| 500+ | 0.61 EUR |
| 1000+ | 0.51 EUR |
| 5000+ | 0.44 EUR |
| MOT4712S |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET P-CH 40V 30A 11m SOP-8
Description: MOSFET P-CH 40V 30A 11m SOP-8
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.4 EUR |
| 15+ | 1.44 EUR |
| 100+ | 0.87 EUR |
| 500+ | 0.61 EUR |
| 1000+ | 0.51 EUR |
| 4000+ | 0.44 EUR |
| MOT4733J |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET P-CH 40V 15A 33m PDFN3x3
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A
Rds On (Max) @ Id, Vgs: 35mOhm @ 10A, 4.5V
Power Dissipation (Max): 25W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (3x3)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 928 pF @ 20 V
Description: MOSFET P-CH 40V 15A 33m PDFN3x3
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A
Rds On (Max) @ Id, Vgs: 35mOhm @ 10A, 4.5V
Power Dissipation (Max): 25W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (3x3)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 928 pF @ 20 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 47.47 EUR |
| 22+ | 5.57 EUR |
| 100+ | 1.05 EUR |
| 500+ | 0.5 EUR |
| 1000+ | 0.39 EUR |
| 5000+ | 0.31 EUR |
| MOT4N65C |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 4A 2.3 To251
Description: MOSFET N-CH 650V 4A 2.3 To251
auf Bestellung 4200 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 47.91 EUR |
| 17+ | 5.83 EUR |
| 100+ | 1.2 EUR |
| 500+ | 0.62 EUR |
| 1000+ | 0.49 EUR |
| 4200+ | 0.39 EUR |
| MOT4N65D |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 4A 2.3 To252
Description: MOSFET N-CH 650V 4A 2.3 To252
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 47.91 EUR |
| 17+ | 5.83 EUR |
| 100+ | 1.2 EUR |
| 500+ | 0.62 EUR |
| 1000+ | 0.49 EUR |
| 2500+ | 0.39 EUR |
| MOT4N65F |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 4A 2.3 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 2A, 10V
Power Dissipation (Max): 30W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Description: MOSFET N-CH 650V 4A 2.3 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 2A, 10V
Power Dissipation (Max): 30W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 48.33 EUR |
| 14+ | 6.08 EUR |
| 100+ | 1.36 EUR |
| 500+ | 0.73 EUR |
| 1000+ | 0.58 EUR |
| MOT4N65T |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 4A 2.4m Toll-8
Description: MOSFET N-CH 650V 4A 2.4m Toll-8
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 53.82 EUR |
| 10+ | 9.37 EUR |
| 100+ | 3.33 EUR |
| 500+ | 2.09 EUR |
| 1000+ | 1.75 EUR |
| 2000+ | 1.48 EUR |
| MOT4N70D |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 700V 4A 3 To252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 2A, 10V
Power Dissipation (Max): 50W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 25 V
Description: MOSFET N-CH 700V 4A 3 To252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 2A, 10V
Power Dissipation (Max): 50W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.12 EUR |
| 17+ | 1.27 EUR |
| 100+ | 0.76 EUR |
| 500+ | 0.54 EUR |
| 1000+ | 0.45 EUR |
| 2500+ | 0.38 EUR |
| MOT4N70F |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 700V 4A 3 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 2A, 10V
Power Dissipation (Max): 30W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 25 V
Description: MOSFET N-CH 700V 4A 3 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 2A, 10V
Power Dissipation (Max): 30W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.53 EUR |
| 14+ | 1.51 EUR |
| 100+ | 0.9 EUR |
| 500+ | 0.63 EUR |
| 1000+ | 0.54 EUR |
| MOT50N03BD |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 30V 50A 7.3m To-252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
Power Dissipation (Max): 40W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
Description: MOSFET N-CH 30V 50A 7.3m To-252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
Power Dissipation (Max): 40W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 21+ | 46.86 EUR |
| 35+ | 5.2 EUR |
| 100+ | 0.83 EUR |
| 500+ | 0.35 EUR |
| 1000+ | 0.26 EUR |
| 2500+ | 0.2 EUR |
| MOT50N03C |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 30V 50A 7.3m To-251
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A
Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V
Power Dissipation (Max): 50W
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 12 V
Description: MOSFET N-CH 30V 50A 7.3m To-251
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A
Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V
Power Dissipation (Max): 50W
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 12 V
auf Bestellung 4200 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 17+ | 47.08 EUR |
| 29+ | 5.32 EUR |
| 100+ | 0.9 EUR |
| 500+ | 0.4 EUR |
| 1000+ | 0.31 EUR |
| 4200+ | 0.24 EUR |
| MOT50N03D |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 30V 50A 7.3m To-252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
Power Dissipation (Max): 40W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 20 V
Description: MOSFET N-CH 30V 50A 7.3m To-252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
Power Dissipation (Max): 40W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 20 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 19+ | 46.97 EUR |
| 31+ | 5.26 EUR |
| 100+ | 0.87 EUR |
| 500+ | 0.38 EUR |
| 1000+ | 0.29 EUR |
| 2500+ | 0.23 EUR |
| MOT50N04D |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 40V 50A 8m To-252
Description: MOSFET N-CH 40V 50A 8m To-252
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 1.68 EUR |
| 21+ | 1.01 EUR |
| 100+ | 0.61 EUR |
| 500+ | 0.43 EUR |
| 1000+ | 0.36 EUR |
| 2500+ | 0.31 EUR |
| MOT50N06C |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 60V 50A 13m To-251
Description: MOSFET N-CH 60V 50A 13m To-251
auf Bestellung 4200 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 47.54 EUR |
| 21+ | 5.6 EUR |
| 100+ | 1.07 EUR |
| 500+ | 0.52 EUR |
| 1000+ | 0.4 EUR |
| 4200+ | 0.32 EUR |
| MOT50N06D |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 60V 50A 13m To-252
Description: MOSFET N-CH 60V 50A 13m To-252
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 46.89 EUR |
| 23+ | 5.51 EUR |
| 100+ | 1.01 EUR |
| 500+ | 0.48 EUR |
| 1000+ | 0.38 EUR |
| 2500+ | 0.3 EUR |
| MOT50P06D |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET P-CH 60V 50A 13m To-252
Description: MOSFET P-CH 60V 50A 13m To-252
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 48.77 EUR |
| 12+ | 6.35 EUR |
| 100+ | 1.52 EUR |
| 500+ | 0.83 EUR |
| 1000+ | 0.68 EUR |
| 2500+ | 0.56 EUR |
| MOT55N06B |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 60V 55A m To-220
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A
Rds On (Max) @ Id, Vgs: 22mOhm @ 20A, 10V
Power Dissipation (Max): 100W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1478 pF @ 30 V
Description: MOSFET N-CH 60V 55A m To-220
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A
Rds On (Max) @ Id, Vgs: 22mOhm @ 20A, 10V
Power Dissipation (Max): 100W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1478 pF @ 30 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.47 EUR |
| 11+ | 2.09 EUR |
| 100+ | 1.25 EUR |
| 500+ | 0.88 EUR |
| 1000+ | 0.75 EUR |
| MOT5N60F |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 600V 5A 2 To220F
Description: MOSFET N-CH 600V 5A 2 To220F
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 48.33 EUR |
| 14+ | 6.08 EUR |
| 100+ | 1.36 EUR |
| 500+ | 0.73 EUR |
| 1000+ | 0.58 EUR |
| MOT5N65A |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 5A 2.1 To220
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2.5A, 10V
Power Dissipation (Max): 75W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 631 pF @ 25 V
Description: MOSFET N-CH 650V 5A 2.1 To220
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2.5A, 10V
Power Dissipation (Max): 75W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 631 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.76 EUR |
| 13+ | 1.67 EUR |
| 100+ | 1 EUR |
| 500+ | 0.7 EUR |
| 1000+ | 0.6 EUR |
| MOT5N65F |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 5A 2 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2.5A, 10V
Power Dissipation (Max): 30W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 628 pF @ 25 V
Description: MOSFET N-CH 650V 5A 2 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2.5A, 10V
Power Dissipation (Max): 30W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 628 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 48.21 EUR |
| 15+ | 6 EUR |
| 100+ | 1.31 EUR |
| 500+ | 0.69 EUR |
| 1000+ | 0.55 EUR |
| MOT60N02D |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 20V 60A 6.5m To-252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 4.5V
Power Dissipation (Max): 40W
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 10 V
Description: MOSFET N-CH 20V 60A 6.5m To-252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 4.5V
Power Dissipation (Max): 40W
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 10 V
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| MOT6111G |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 60V 226A 2m PDFN5x6
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 226A
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 20A, 10V
Power Dissipation (Max): 147W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 30 V
Description: MOSFET N-CH 60V 226A 2m PDFN5x6
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 226A
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 20A, 10V
Power Dissipation (Max): 147W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 30 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 54.24 EUR |
| 10+ | 9.63 EUR |
| 100+ | 3.49 EUR |
| 500+ | 2.21 EUR |
| 1000+ | 1.84 EUR |
| 5000+ | 1.54 EUR |
| MOT6113HT |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 60V 318A 1.25m Toll-
Description: MOSFET N-CH 60V 318A 1.25m Toll-
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 54.24 EUR |
| 10+ | 9.63 EUR |
| 100+ | 3.49 EUR |
| 500+ | 2.21 EUR |
| 1000+ | 1.84 EUR |
| 2000+ | 1.56 EUR |
| MOT6515G |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 60V 50A 13m PDFN5x6
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 75W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V
Description: MOSFET N-CH 60V 50A 13m PDFN5x6
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 75W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 48.59 EUR |
| 13+ | 6.22 EUR |
| 100+ | 1.44 EUR |
| 500+ | 0.79 EUR |
| 1000+ | 0.63 EUR |
| 5000+ | 0.51 EUR |
| MOT6515J |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 60V 50A 13m PDFN3x3
Description: MOSFET N-CH 60V 50A 13m PDFN3x3
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 47.58 EUR |
| 21+ | 5.63 EUR |
| 100+ | 1.08 EUR |
| 500+ | 0.54 EUR |
| 1000+ | 0.42 EUR |
| 5000+ | 0.32 EUR |
| MOT6522G |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 60V 35A 15m PDFN5x6
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A
Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V
Power Dissipation (Max): 42W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 612 pF @ 20 V
Description: MOSFET N-CH 60V 35A 15m PDFN5x6
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A
Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V
Power Dissipation (Max): 42W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 612 pF @ 20 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 47.58 EUR |
| 21+ | 5.63 EUR |
| 100+ | 1.08 EUR |
| 500+ | 0.52 EUR |
| 1000+ | 0.42 EUR |
| 5000+ | 0.32 EUR |
| MOT6522J |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 60V 35A 17m PDFN3x3
Description: MOSFET N-CH 60V 35A 17m PDFN3x3
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15+ | 47.27 EUR |
| 25+ | 5.45 EUR |
| 100+ | 0.98 EUR |
| 500+ | 0.45 EUR |
| 1000+ | 0.36 EUR |
| 5000+ | 0.27 EUR |
| MOT6568J |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 60V 5A 57m PDFN3x3
Description: MOSFET N-CH 60V 5A 57m PDFN3x3
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 21+ | 46.86 EUR |
| 35+ | 5.2 EUR |
| 100+ | 0.83 EUR |
| 500+ | 0.35 EUR |
| 1000+ | 0.26 EUR |
| 5000+ | 0.19 EUR |
| MOT65R099KN |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 40A 0.099 To-24
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A
Rds On (Max) @ Id, Vgs: 99mOhm @ 20A, 10V
Power Dissipation (Max): 357W
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Description: MOSFET N-CH 650V 40A 0.099 To-24
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A
Rds On (Max) @ Id, Vgs: 99mOhm @ 20A, 10V
Power Dissipation (Max): 357W
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 27.54 EUR |
| 10+ | 16.52 EUR |
| 100+ | 9.91 EUR |
| 600+ | 6.94 EUR |
| MOT65R180HGF |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 20A 0.18 To-220
Description: MOSFET N-CH 650V 20A 0.18 To-220
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 10.47 EUR |
| 10+ | 6.3 EUR |
| 100+ | 3.77 EUR |
| 500+ | 2.64 EUR |
| 1000+ | 2.25 EUR |
| MOT65R190HKF |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 20A 0.15 To-220
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Power Dissipation (Max): 37W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Description: MOSFET N-CH 650V 20A 0.15 To-220
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Power Dissipation (Max): 37W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 16.28 EUR |
| 10+ | 9.76 EUR |
| 100+ | 5.85 EUR |
| 500+ | 4.09 EUR |
| 1000+ | 3.49 EUR |
| MOT65R280D |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 15A 300 MOHM
Description: MOSFET N-CH 650V 15A 300 MOHM
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.7 EUR |
| 10+ | 5.81 EUR |
| 100+ | 3.49 EUR |
| 500+ | 2.44 EUR |
| 1000+ | 2.07 EUR |
| 2500+ | 1.76 EUR |
| MOT65R280F |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 15A 0.30 To-220
Description: MOSFET N-CH 650V 15A 0.30 To-220
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 10.2 EUR |
| 10+ | 6.12 EUR |
| 100+ | 3.68 EUR |
| 500+ | 2.57 EUR |
| 1000+ | 2.19 EUR |
| MOT65R380D |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 11A 0.35 To-252
Description: MOSFET N-CH 650V 11A 0.35 To-252
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.59 EUR |
| 10+ | 3.95 EUR |
| 100+ | 2.37 EUR |
| 500+ | 1.67 EUR |
| 1000+ | 1.42 EUR |
| 2500+ | 1.2 EUR |
| MOT65R380F |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 11A 0.35 To-220
Description: MOSFET N-CH 650V 11A 0.35 To-220
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 52.86 EUR |
| 10+ | 8.79 EUR |
| 100+ | 2.99 EUR |
| 500+ | 1.86 EUR |
| 1000+ | 1.55 EUR |
| MOT65R850D |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 4A 0.83 To-252
Description: MOSFET N-CH 650V 4A 0.83 To-252
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.24 EUR |
| 10+ | 2.55 EUR |
| 100+ | 1.52 EUR |
| 500+ | 1.07 EUR |
| 1000+ | 0.9 EUR |
| 2500+ | 0.77 EUR |
| MOT70N03D |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 30V 7A 5.5m To-252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 4.5V
Power Dissipation (Max): 53W
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1485 pF @ 25 V
Description: MOSFET N-CH 30V 7A 5.5m To-252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 4.5V
Power Dissipation (Max): 53W
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1485 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 18+ | 1.21 EUR |
| 29+ | 0.73 EUR |
| 100+ | 0.43 EUR |
| 500+ | 0.3 EUR |
| 1000+ | 0.26 EUR |
| 2500+ | 0.21 EUR |
| MOT70R280HF |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 700V 15A 0.30 To-220
Description: MOSFET N-CH 700V 15A 0.30 To-220
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 12.65 EUR |
| 10+ | 7.6 EUR |
| 100+ | 4.56 EUR |
| 500+ | 3.19 EUR |
| 1000+ | 2.71 EUR |
| MOT70R380D |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 700V 11A 0.32 To-252
Description: MOSFET N-CH 700V 11A 0.32 To-252
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.72 EUR |
| 10+ | 4.64 EUR |
| 100+ | 2.78 EUR |
| 500+ | 1.95 EUR |
| 1000+ | 1.65 EUR |
| 2500+ | 1.4 EUR |
| MOT70R380F |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 700V 11A 0.32 To-220
Description: MOSFET N-CH 700V 11A 0.32 To-220
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.43 EUR |
| 10+ | 5.03 EUR |
| 100+ | 3.02 EUR |
| 500+ | 2.12 EUR |
| 1000+ | 1.8 EUR |
| MOT75N75D |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 75V 75A 7.5m To-252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 115W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 30 V
Description: MOSFET N-CH 75V 75A 7.5m To-252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 115W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 30 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.19 EUR |
| 10+ | 2.51 EUR |
| 100+ | 1.51 EUR |
| 500+ | 1.06 EUR |
| 1000+ | 0.89 EUR |
| 2500+ | 0.76 EUR |
| MOT7N65AC |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 7A 1.12 To251
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 1.35Ohm @ 3.5A, 10V
Power Dissipation (Max): 100W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Description: MOSFET N-CH 650V 7A 1.12 To251
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 1.35Ohm @ 3.5A, 10V
Power Dissipation (Max): 100W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 4200 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 47.89 EUR |
| 13+ | 6.27 EUR |
| 100+ | 1.48 EUR |
| 500+ | 0.8 EUR |
| 1000+ | 0.65 EUR |
| 4200+ | 0.52 EUR |
| MOT7N65AD |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 7A 1.12 To252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 1.35Ohm @ 3.5A, 10V
Power Dissipation (Max): 100W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Description: MOSFET N-CH 650V 7A 1.12 To252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 1.35Ohm @ 3.5A, 10V
Power Dissipation (Max): 100W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 47.87 EUR |
| 13+ | 6.27 EUR |
| 100+ | 1.48 EUR |
| 500+ | 0.8 EUR |
| 1000+ | 0.65 EUR |
| 2500+ | 0.54 EUR |
| MOT7N70C |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 700V 7A 1.45 To251
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 3.5A, 10V
Power Dissipation (Max): 100W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Description: MOSFET N-CH 700V 7A 1.45 To251
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 3.5A, 10V
Power Dissipation (Max): 100W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 4200 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 48.84 EUR |
| 12+ | 6.38 EUR |
| 100+ | 1.54 EUR |
| 500+ | 0.84 EUR |
| 1000+ | 0.69 EUR |
| 4200+ | 0.56 EUR |
| MOT7N70D |
![]() |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 700V 7A 1.45 To252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 3.5A, 10V
Power Dissipation (Max): 100W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Description: MOSFET N-CH 700V 7A 1.45 To252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 3.5A, 10V
Power Dissipation (Max): 100W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 48.84 EUR |
| 12+ | 6.38 EUR |
| 100+ | 1.54 EUR |
| 500+ | 0.84 EUR |
| 1000+ | 0.69 EUR |
| 2500+ | 0.56 EUR |
| MOT7N70F |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 700V 7A 1.45 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 3.5A, 10V
Power Dissipation (Max): 38W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Description: MOSFET N-CH 700V 7A 1.45 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 3.5A, 10V
Power Dissipation (Max): 38W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 49.21 EUR |
| 11+ | 6.6 EUR |
| 100+ | 1.67 EUR |
| 500+ | 0.94 EUR |
| 1000+ | 0.76 EUR |
| MOT7N80F |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 800V 7A 1.5 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 3.5A, 10V
Power Dissipation (Max): 33W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Description: MOSFET N-CH 800V 7A 1.5 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 3.5A, 10V
Power Dissipation (Max): 33W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.07 EUR |
| 10+ | 4.83 EUR |
| 100+ | 2.9 EUR |
| 500+ | 2.03 EUR |
| 1000+ | 1.73 EUR |
| MOT80N03C |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 30V 80A 4m To-251
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Power Dissipation (Max): 78W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 20 V
Description: MOSFET N-CH 30V 80A 4m To-251
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Power Dissipation (Max): 78W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 20 V
auf Bestellung 4200 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 17+ | 47.11 EUR |
| 28+ | 5.36 EUR |
| 100+ | 0.92 EUR |
| 500+ | 0.42 EUR |
| 1000+ | 0.32 EUR |
| 4200+ | 0.25 EUR |
| MOT80N03D |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 30V 80A 4m To-252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Power Dissipation (Max): 78W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 20 V
Description: MOSFET N-CH 30V 80A 4m To-252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Power Dissipation (Max): 78W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 20 V
auf Bestellung 2498 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 21+ | 46.86 EUR |
| 35+ | 5.2 EUR |
| 100+ | 0.83 EUR |
| 500+ | 0.35 EUR |
| 1000+ | 0.26 EUR |
| MOT80N03XD |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 30V 80A 4m To-252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Power Dissipation (Max): 78W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 20 V
Description: MOSFET N-CH 30V 80A 4m To-252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Power Dissipation (Max): 78W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 20 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 21+ | 46.86 EUR |
| 35+ | 5.2 EUR |
| 100+ | 0.83 EUR |
| 500+ | 0.35 EUR |
| 1000+ | 0.26 EUR |
| 2500+ | 0.2 EUR |
| MOT80N06C |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 60V 80A 6m To-251
Description: MOSFET N-CH 60V 80A 6m To-251
auf Bestellung 4200 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 48.92 EUR |
| 12+ | 6.43 EUR |
| 100+ | 1.57 EUR |
| 500+ | 0.87 EUR |
| 1000+ | 0.7 EUR |
| 4200+ | 0.57 EUR |
| MOT80N06D |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 60V 80A 6m To-252
Description: MOSFET N-CH 60V 80A 6m To-252
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 48.75 EUR |
| 12+ | 6.34 EUR |
| 100+ | 1.51 EUR |
| 500+ | 0.83 EUR |
| 1000+ | 0.67 EUR |
| 2500+ | 0.55 EUR |
| MOT80P03D |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET P-CH 30V 80A 4.7m To-252
Description: MOSFET P-CH 30V 80A 4.7m To-252
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 48.9 EUR |
| 12+ | 6.41 EUR |
| 100+ | 1.56 EUR |
| 500+ | 0.86 EUR |
| 1000+ | 0.7 EUR |
| 2500+ | 0.57 EUR |
| MOT8113T |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 85V 300A 1.1m Toll-8
Description: MOSFET N-CH 85V 300A 1.1m Toll-8
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 62.64 EUR |
| 10+ | 14.67 EUR |
| 100+ | 6.51 EUR |
| 500+ | 4.33 EUR |
| 1000+ | 3.64 EUR |
| 2000+ | 3.08 EUR |
| MOT8156D |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 100V 120A 4.7m To-2
Description: MOSFET N-CH 100V 120A 4.7m To-2
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 51.99 EUR |
| 10+ | 8.27 EUR |
| 100+ | 2.67 EUR |
| 500+ | 1.64 EUR |
| 1000+ | 1.37 EUR |
| 2500+ | 1.14 EUR |
| MOT8156T |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 100V 163A 3.8m Toll-
Description: MOSFET N-CH 100V 163A 3.8m Toll-
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 50.82 EUR |
| 10+ | 7.58 EUR |
| 100+ | 2.26 EUR |
| 500+ | 1.34 EUR |
| 1000+ | 1.12 EUR |
| 2000+ | 0.93 EUR |
| MOT8205SA6 |
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Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET -CH V MA SOT23
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 4.5V
Power Dissipation (Max): 1.14W
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 20 V
Description: MOSFET -CH V MA SOT23
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 4.5V
Power Dissipation (Max): 1.14W
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 20 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 59+ | 46.2 EUR |
| 102+ | 4.8 EUR |
| 168+ | 0.58 EUR |
| 500+ | 0.18 EUR |
| 1000+ | 0.12 EUR |
| 3000+ | 0.079 EUR |











