Produkte > INFINEON (IRF) > Alle Produkte des Herstellers INFINEON (IRF) (6) > Seite 1 nach 1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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AUIRF2804S | Infineon (IRF) |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 270A; 300W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 270A Power dissipation: 300W Case: D2PAK Mounting: SMD Kind of channel: enhancement Gate-source voltage: ±20V Gate charge: 160nC On-state resistance: 2mΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IRF240 | Infineon (IRF) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 125W; TO3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 18A Power dissipation: 125W Case: TO3 Mounting: THT Kind of channel: enhancement Technology: HEXFET® Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IRF7425PBF | Infineon (IRF) |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -15A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -15A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of channel: enhancement On-state resistance: 8.2mΩ Gate charge: 87nC Gate-source voltage: ±12V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IRG4BC20UDPBF | Infineon (IRF) |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 13A; 60W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 13A Power dissipation: 60W Case: TO220AB Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IRGB20B60PD1PBF | Infineon (IRF) |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 40A; 215W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 40A Power dissipation: 215W Case: TO220AB Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| AUIRF2804S |
|
Hersteller: Infineon (IRF)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 160nC
On-state resistance: 2mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 160nC
On-state resistance: 2mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF240 |
|
Hersteller: Infineon (IRF)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 125W; TO3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Power dissipation: 125W
Case: TO3
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 125W; TO3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Power dissipation: 125W
Case: TO3
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF7425PBF |
|
Hersteller: Infineon (IRF)
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -15A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -15A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 8.2mΩ
Gate charge: 87nC
Gate-source voltage: ±12V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -15A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -15A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 8.2mΩ
Gate charge: 87nC
Gate-source voltage: ±12V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRG4BC20UDPBF | |
|
Hersteller: Infineon (IRF)
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 13A; 60W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 13A
Power dissipation: 60W
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 13A; 60W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 13A
Power dissipation: 60W
Case: TO220AB
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRGB20B60PD1PBF | |
|
Hersteller: Infineon (IRF)
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 215W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 215W
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 215W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 215W
Case: TO220AB
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH