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FS100R07N2E4B11BPSA1 Infineon Technologies Infineon-FS100R07N2E4_B11-DS-v03_00-EN.pdf?fileId=db3a30433004641301304036f2a4573e Description: IGBT MODULE 650V 100A AG-ECONO2B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 335 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.2 nF @ 25 V
Produkt ist nicht verfügbar
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FS100R07N2E4BPSA1 FS100R07N2E4BPSA1 Infineon Technologies Infineon-FS100R07N2E4-DS-v02_00-en_de.pdf?fileId=db3a30432f5008fe012f52f5fa2e396f Description: IGBT MODULE 650V 100A AG-ECONO2B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 335 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.2 nF @ 25 V
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FS100R12KT4BPSA1 Infineon Technologies Description: LOW POWER ECONO AG-ECONO2B-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: AG-ECONO3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 515 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
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FS100R12N2T4BPSA2 Infineon Technologies Infineon-FS100R12N2T4-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0163a6e8cdc61038 Description: IGBT MOD 1200V 100A AG-ECONO2B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
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FS100R12W2T7BOMA1 FS100R12W2T7BOMA1 Infineon Technologies Infineon-FS100R12W2T7-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170f18ea895736e Description: IGBT MODULE 1200V 70A AG-EASY2B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 9 µA
Input Capacitance (Cies) @ Vce: 21.7 nF @ 25 V
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FS100R12W2T7PBPSA1 FS100R12W2T7PBPSA1 Infineon Technologies Infineon-FS100R12W2T7-DataSheet-v01_00-EN.pdf?fileId=5546d46270c4f93e0170f18ea895736e Description: LOW POWER EASY AG-EASY2B-711
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 9 µA
Input Capacitance (Cies) @ Vce: 21.7 nF @ 25 V
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FS3L100R07W3S5B11BPSA1 FS3L100R07W3S5B11BPSA1 Infineon Technologies Infineon-FS3L100R07W3S5_B11-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7c72fb9a017c7ef66f72131c Description: IGBT MODULE 650V 70A AG-EASY3B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.38V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY3B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 7 µA
Input Capacitance (Cies) @ Vce: 7.1 nF @ 25 V
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F4100R06KL4BOSA1 F4100R06KL4BOSA1 Infineon Technologies Description: IGBT MOD 600V 130A 430W
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FP75R17N3E4B11BPSA1 FP75R17N3E4B11BPSA1 Infineon Technologies Infineon-FP75R17N3E4_B11-DS-v03_00-EN.pdf?fileId=5546d4625d5945ed015d59ef65a00007 Description: IGBT MODULE 1700V 150A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.8 nF @ 25 V
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FP75R17N3E4PB21BPSA1 Infineon Technologies infineon-fs75r17w2e4p-b11-datasheet-en.pdf Description: IGBT MODULE 1700V 125A AG-ECONO3
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 125 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 555 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.8 nF @ 25 V
Produkt ist nicht verfügbar
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BAW56-B5003 BAW56-B5003 Infineon Technologies Description: HIGH SPEED SWITCHING DIODE
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IGW50N65H5 IGW50N65H5 Infineon Technologies Part_Number_Guide_Web.pdf Description: IGBT 650V 80A 305W PG-TO247-3
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CY7C1568KV18-500BZXI CY7C1568KV18-500BZXI Infineon Technologies CY7C1568%2C70KV18.pdf Description: IC SRAM 72MBIT PAR 165FBGA
Memory Organization: 4M x 18
Memory Interface: Parallel
DigiKey Programmable: Not Verified
Package / Case: 165-LBGA
Packaging: Tray
Part Status: Obsolete
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 500 MHz
Technology: SRAM - Synchronous, DDR II+
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 72Mbit
Mounting Type: Surface Mount
auf Bestellung 242 Stücke:
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CY7C1570KV18-500BZC CY7C1570KV18-500BZC Infineon Technologies download Description: IC SRAM 72MBIT PAR 165FBGA
Memory Organization: 2M x 36
Memory Interface: Parallel
Part Status: Active
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 500 MHz
Technology: SRAM - Synchronous, DDR II+
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 72Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Bulk
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CY7C25632KV18-500BZXC CY7C25632KV18-500BZXC Infineon Technologies Infineon-CY7C25632KV18_CY7C25652KV18_72-Mbit_QDR(R)_II+_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec20e0136ec&utm_source=cypress&utm_medium=referra Description: IC SRAM 72MBIT PAR 165FBGA
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
DigiKey Programmable: Not Verified
Memory Organization: 4M x 18
Memory Interface: Parallel
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 500 MHz
Technology: SRAM - Synchronous, QDR II+
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 72Mbit
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BGSA147ML10E6327XTSA1 BGSA147ML10E6327XTSA1 Infineon Technologies Infineon-BGSA147ML10-DataSheet-v01_00-EN.pdf?fileId=5546d46277921c320177ba20358645ab Description: IC RF SW SP4T 7.125GHZ TSLP10
Packaging: Cut Tape (CT)
Package / Case: 10-XFQFN
Mounting Type: Surface Mount
Circuit: SP4T
RF Type: General Purpose
Voltage - Supply: 45V
Frequency Range: 400MHz ~ 7.125GHz
Topology: Reflective
Supplier Device Package: PG-TSLP-10-3
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25+0.9 EUR
100+0.83 EUR
250+0.79 EUR
500+0.75 EUR
1000+0.71 EUR
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BGSX44MU18E6327XUSA1 BGSX44MU18E6327XUSA1 Infineon Technologies Infineon-BGSX44MU18-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c7c03edb4017c2732b70847e7 Description: IC RF SW 4P4T 7.125GHZ WLGA18
Supplier Device Package: PG-WLGA-18-1
Isolation: 27dB
Test Frequency: 7.125GHz
Frequency Range: 400MHz ~ 7.125GHz
Insertion Loss: 1.5dB
Voltage - Supply: 1.6V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Circuit: 4P4T
Impedance: 50Ohm
Package / Case: 18-WFLGA Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BGSX44MU18E6327XUSA1 BGSX44MU18E6327XUSA1 Infineon Technologies Infineon-BGSX44MU18-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c7c03edb4017c2732b70847e7 Description: IC RF SW 4P4T 7.125GHZ WLGA18
Supplier Device Package: PG-WLGA-18-1
Isolation: 27dB
Test Frequency: 7.125GHz
Frequency Range: 400MHz ~ 7.125GHz
Insertion Loss: 1.5dB
Voltage - Supply: 1.6V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Circuit: 4P4T
Impedance: 50Ohm
Package / Case: 18-WFLGA Exposed Pad
Packaging: Cut Tape (CT)
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6+3.64 EUR
10+2.69 EUR
25+2.45 EUR
100+2.19 EUR
250+2.06 EUR
500+2.01 EUR
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BSZ050N03LSG BSZ050N03LSG Infineon Technologies INFNS16421-1.pdf?t.download=true&u=5oefqw Description: BSZ050N03 - 12V-300V N-CHANNEL P
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
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BSZ050N03MSG BSZ050N03MSG Infineon Technologies INFNS16422-1.pdf?t.download=true&u=5oefqw Description: BSZ050N03 - 12V-300V N-CHANNEL P
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BSM300GA170DLCHOSA1 Infineon Technologies Description: IGBT MOD 1700V 600A 2520W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 2520 W
Current - Collector Cutoff (Max): 600 µA
Input Capacitance (Cies) @ Vce: 20 nF @ 25 V
auf Bestellung 838 Stücke:
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FD300R12KS4B5HOSA1 FD300R12KS4B5HOSA1 Infineon Technologies Infineon-FD300R12KS4_B5-DS-v02_00-en_de.pdf?fileId=db3a304318a6cd680118aceb98fa7763 Description: IGBT MOD 1200V 370A 1950W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 370 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1950 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 20 nF @ 25 V
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BAS16-02VE6327 BAS16-02VE6327 Infineon Technologies INFNS13366-1.pdf?t.download=true&u=5oefqw Description: RECTIFIER DIODE, 85V
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K226N3622 Infineon Technologies Description: AUTOMOTIVE PRESSURE SENSOR
Packaging: Bulk
Part Status: Active
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FP15R12KE3GBPSA1 Infineon Technologies Infineon-FP15R12KE3G-DS-v03_02-en_de.pdf?fileId=db3a304412b407950112b430a8c95181 Description: LOW POWER ECONO AG-ECONO2C-311
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 10A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2C
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 105 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V
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BTS5045-2EKA BTS5045-2EKA Infineon Technologies INFNS16647-1.pdf?t.download=true&u=5oefqw Description: BTS5045 - PROFET - SMART HIGH SI
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BAS40E6433 BAS40E6433 Infineon Technologies INFNS11688-1.pdf?t.download=true&u=5oefqw Description: DIODE SCHOTTKY 40V 120MA SOT23-3
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4052+0.14 EUR
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IRF7456TRPBF-1 IRF7456TRPBF-1 Infineon Technologies IRF7456PbF-1_11-20-13.pdf Description: MOSFET N-CH 20V 16A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 16A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3640 pF @ 15 V
Produkt ist nicht verfügbar
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1MS08017E32W31490NOSA1 Infineon Technologies Description: MODULE IGBT STACK A-MS2-1
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BAV70E6767 BAV70E6767 Infineon Technologies INFNS11270-1.pdf?t.download=true&u=5oefqw Description: DIODE ARRAY GEN PURP 80V 200MA
Current - Reverse Leakage @ Vr: 150 nA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: 150°C
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Qualification: AEC-Q101
Grade: Automotive
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8955+0.055 EUR
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CY9AF156NPMC-G-JNE2 CY9AF156NPMC-G-JNE2 Infineon Technologies Infineon-CY9A150RB_SERIES_32_BIT_ARM_Cortex_M3_FM3_MICROCONTROLLER-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edff429655e Description: IC MCU 32BIT 544KB FLASH 100LQFP
Number of I/O: 83
Part Status: Active
Supplier Device Package: 100-LQFP (14x14)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Core Size: 32-Bit Single-Core
Data Converters: A/D 24x12b
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 64K x 8
Program Memory Size: 544KB (544K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
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7+3.36 EUR
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CY9AF156NPMC-G-JNE2 CY9AF156NPMC-G-JNE2 Infineon Technologies Infineon-CY9A150RB_SERIES_32_BIT_ARM_Cortex_M3_FM3_MICROCONTROLLER-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edff429655e Description: IC MCU 32BIT 544KB FLASH 100LQFP
Number of I/O: 83
Part Status: Active
Supplier Device Package: 100-LQFP (14x14)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Core Size: 32-Bit Single-Core
Data Converters: A/D 24x12b
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 64K x 8
Program Memory Size: 544KB (544K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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1ED020I12BTXUMA1 1ED020I12BTXUMA1 Infineon Technologies INFNS19244-1.pdf?t.download=true&u=5oefqw Description: DGT ISO 4.5KV 1CH GT DVR DSO16
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 4500Vrms
Supplier Device Package: PG-DSO-16-15
Rise / Fall Time (Typ): 30ns, 20ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 4.5V ~ 5.5V
Produkt ist nicht verfügbar
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D4600U45X172XPSA1 D4600U45X172XPSA1 Infineon Technologies Infineon-D4600U45X172-DS-v01_02-EN.pdf?fileId=5546d4625f96303e015fa5e43ef4397a Description: DIODE STD 4500V 4450A BGD17226K1
Packaging: Tray
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 4450A
Supplier Device Package: BG-D17226K-1
Operating Temperature - Junction: 140°C (Max)
Voltage - DC Reverse (Vr) (Max): 4500 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 2500 A
Current - Reverse Leakage @ Vr: 25 mA @ 4500 V
Produkt ist nicht verfügbar
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FF600R17ME4B11BPSA1 FF600R17ME4B11BPSA1 Infineon Technologies Infineon-FF600R17ME4_B11-DataSheet-v03_00-EN.pdf?fileId=db3a304333b8a7ca0133c679a07b6151 Description: IGBT MOD 1700V 950A AG-ECONOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 950 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 48 nF @ 25 V
Produkt ist nicht verfügbar
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FF1800R23IE7BPSA1 FF1800R23IE7BPSA1 Infineon Technologies Infineon-FF1800R23IE7-DataSheet-v01_20-EN.pdf?fileId=8ac78c8c8412f8d30184859ae7390a24 Description: PP IHM I XHP 2.3KV AG-PRIME3+-7
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.26V @ 15V, 1.8kA
NTC Thermistor: No
Supplier Device Package: AG-PRIME3+
Part Status: Active
Current - Collector (Ic) (Max): 1800 A
Voltage - Collector Emitter Breakdown (Max): 2300 V
Current - Collector Cutoff (Max): 30 mA
Input Capacitance (Cies) @ Vce: 420 nF @ 25 V
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TT210N12KOFHPSA1 TT210N12KOFHPSA1 Infineon Technologies TT210N.pdf Description: SCR MODULE 1.2KV MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6600A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 261 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Obsolete
Voltage - Off State: 1.2 kV
Produkt ist nicht verfügbar
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SAA-XC866-2FRA5VBE SAA-XC866-2FRA5VBE Infineon Technologies INFNS15053-1.pdf?t.download=true&u=5oefqw Description: XC800 I-FAMILY MICROCONTROLLER ,
Packaging: Bulk
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 86MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 768 x 8
Operating Temperature: -40°C ~ 140°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: 1Y8x10b SAR
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: SPI, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-4
Number of I/O: 19
DigiKey Programmable: Not Verified
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SAA-XC866-2FRABE SAA-XC866-2FRABE Infineon Technologies INFNS15053-1.pdf?t.download=true&u=5oefqw Description: 8051 COMPATIBLE 8-BIT MCU
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SAA-XC866-4FRA SAA-XC866-4FRA Infineon Technologies INFNS15053-1.pdf?t.download=true&u=5oefqw Description: XC800 I-FAMILY MICROCONTROLLER ,
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SAA-XC866-4FRA5VBE SAA-XC866-4FRA5VBE Infineon Technologies INFNS15053-1.pdf?t.download=true&u=5oefqw Description: XC800 I-FAMILY MICROCONTROLLER ,
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SAA-XC8664FRA5VBEAXUMA1 SAA-XC8664FRA5VBEAXUMA1 Infineon Technologies INFNS11218-1.pdf?t.download=true&u=5oefqw Description: XC800 I-FAMILY MICROCONTROLLER ,
Packaging: Bulk
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 86MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 768 x 8
Operating Temperature: -40°C ~ 140°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: 1Y8x10b SAR
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: SPI, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-4
Number of I/O: 19
DigiKey Programmable: Not Verified
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IHW20N65R5 IHW20N65R5 Infineon Technologies Infineon-IHW20N65R5-DS-v02_03-EN.pdf?fileId=5546d461464245d30146ae1140b900d8 Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 82 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 20A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24ns/250ns
Switching Energy: 540µJ (on), 160µJ (off)
Test Condition: 400V, 10A, 20Ohm, 15V
Gate Charge: 97 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 150 W
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IPB330P10NMATMA1 IPB330P10NMATMA1 Infineon Technologies Infineon-IPB330P10NM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bc9a628c74f22 Description: TRENCH >=100V PG-TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 62A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 53A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5.55mA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V
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IPB330P10NMATMA1 IPB330P10NMATMA1 Infineon Technologies Infineon-IPB330P10NM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bc9a628c74f22 Description: TRENCH >=100V PG-TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 62A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 53A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5.55mA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V
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10+6.62 EUR
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100+4.71 EUR
500+4.19 EUR
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IPD18DP10LMATMA1 IPD18DP10LMATMA1 Infineon Technologies Infineon-IPD18DP10LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bddd1558c1a43 Description: TRENCH >=100V PG-TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 2V @ 1.04mA
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 178mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 13.9A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPD18DP10LMATMA1 IPD18DP10LMATMA1 Infineon Technologies Infineon-IPD18DP10LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bddd1558c1a43 Description: TRENCH >=100V PG-TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 2V @ 1.04mA
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 178mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 13.9A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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10+2.42 EUR
50+1.82 EUR
100+1.63 EUR
500+1.3 EUR
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IPD19DP10NMATMA1 IPD19DP10NMATMA1 Infineon Technologies Infineon-IPD19DP10NM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bde08b35a1bae Description: TRENCH >=100V PG-TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta), 13.7A (Tc)
Rds On (Max) @ Id, Vgs: 186mOhm @ 12A, 10V
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.04mA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V
Produkt ist nicht verfügbar
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IPD19DP10NMATMA1 IPD19DP10NMATMA1 Infineon Technologies Infineon-IPD19DP10NM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bde08b35a1bae Description: TRENCH >=100V PG-TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta), 13.7A (Tc)
Rds On (Max) @ Id, Vgs: 186mOhm @ 12A, 10V
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.04mA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V
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10+2.26 EUR
100+1.51 EUR
500+1.2 EUR
1000+1.09 EUR
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CY14B101NA-ZS45XI CY14B101NA-ZS45XI Infineon Technologies Infineon-CY14B101LA_CY14B101NA_1-Mbit_(128_K_8_64_K_16)_nvSRAM-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd6cf32ff4&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC NVSRAM 1MBIT PAR 44TSOP II
DigiKey Programmable: Not Verified
Memory Organization: 64K x 16
Access Time: 45 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 45ns
Supplier Device Package: 44-TSOP II
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Mbit
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Packaging: Bulk
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CY7C1263KV18-550BZXC CY7C1263KV18-550BZXC Infineon Technologies download Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
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CY7C1568KV18-550BZXI CY7C1568KV18-550BZXI Infineon Technologies download Description: IC SRAM 72MBIT PAR 165FBGA
DigiKey Programmable: Not Verified
Package / Case: 165-LBGA
Packaging: Bulk
Memory Organization: 4M x 18
Memory Interface: Parallel
Part Status: Active
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 550 MHz
Technology: SRAM - Synchronous, DDR II+
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 72Mbit
Mounting Type: Surface Mount
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CY7C1570KV18-550BZXC CY7C1570KV18-550BZXC Infineon Technologies download Description: IC SRAM 72MBIT PAR 165FBGA
Memory Organization: 2M x 36
Memory Interface: Parallel
Part Status: Active
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 550 MHz
Technology: SRAM - Synchronous, DDR II+
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 72Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Bulk
auf Bestellung 218 Stücke:
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CY7C2168KV18-550BZC CY7C2168KV18-550BZC Infineon Technologies Infineon-CY7C2168KV18_CY7C2170KV18_18-Mbit_DDR_II+_SRAM_Two-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2014936e0&utm_source=cypress&utm_medium=referral&utm_ Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
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CY7C2170KV18-550BZXC CY7C2170KV18-550BZXC Infineon Technologies Infineon-CY7C2168KV18_CY7C2170KV18_18-Mbit_DDR_II+_SRAM_Two-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2014936e0&utm_source=cypress&utm_medium=referral&utm_ Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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5+120.92 EUR
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AUIRFN7110TR AUIRFN7110TR Infineon Technologies auirfn7110.pdf?fileId=5546d462533600a4015355b1638a1438 Description: MOSFET N-CH 100V 58A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 35A, 10V
Power Dissipation (Max): 4.3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-PQFN (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3050 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FS600R07A2E3BOSA1 Infineon Technologies Description: MODULE IGBT 600V HYBRID PACK 2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 400A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Part Status: Obsolete
Current - Collector (Ic) (Max): 530 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 39 nF @ 25 V
Produkt ist nicht verfügbar
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F3L11MR12W2M1B74BOMA1 F3L11MR12W2M1B74BOMA1 Infineon Technologies Infineon-F3L11MR12W2M1_B74-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177b9447dce438e Description: IGBT MOD 1200V 100A AG-EASY2B-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B-2
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 9 µA
Input Capacitance (Cies) @ Vce: 21.7 nF @ 25 V
auf Bestellung 16 Stücke:
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1+291.17 EUR
15+225.33 EUR
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BA595E6327 BA595E6327 Infineon Technologies INFNS15691-1.pdf?t.download=true&u=5oefqw Description: BA595 - PIN DIODE
Packaging: Bulk
Package / Case: SC-76, SOD-323
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 10V, 1MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOD323-2-1
Part Status: Active
Current - Max: 50 mA
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4020 Stücke
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BA885E6327 BA885E6327 Infineon Technologies INFNS15691-1.pdf?t.download=true&u=5oefqw Description: BA885 - PIN DIODE
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 10V, 1MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT23-3-11
Part Status: Active
Current - Max: 50 mA
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
3752+0.17 EUR
Mindestbestellmenge: 3752 Stücke
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FS100R07N2E4B11BPSA1 Infineon-FS100R07N2E4_B11-DS-v03_00-EN.pdf?fileId=db3a30433004641301304036f2a4573e
Hersteller: Infineon Technologies
Description: IGBT MODULE 650V 100A AG-ECONO2B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 335 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.2 nF @ 25 V
Produkt ist nicht verfügbar
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FS100R07N2E4BPSA1 Infineon-FS100R07N2E4-DS-v02_00-en_de.pdf?fileId=db3a30432f5008fe012f52f5fa2e396f
FS100R07N2E4BPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 650V 100A AG-ECONO2B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 335 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.2 nF @ 25 V
auf Bestellung 55 Stücke:
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AnzahlPrivatkunde
1+127.13 EUR
15+94.05 EUR
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FS100R12KT4BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2B-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: AG-ECONO3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 515 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
Produkt ist nicht verfügbar
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FS100R12N2T4BPSA2 Infineon-FS100R12N2T4-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0163a6e8cdc61038
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 100A AG-ECONO2B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
Produkt ist nicht verfügbar
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FS100R12W2T7BOMA1 Infineon-FS100R12W2T7-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170f18ea895736e
FS100R12W2T7BOMA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 70A AG-EASY2B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 9 µA
Input Capacitance (Cies) @ Vce: 21.7 nF @ 25 V
auf Bestellung 16 Stücke:
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AnzahlPrivatkunde
1+123.05 EUR
15+93.97 EUR
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FS100R12W2T7PBPSA1 Infineon-FS100R12W2T7-DataSheet-v01_00-EN.pdf?fileId=5546d46270c4f93e0170f18ea895736e
FS100R12W2T7PBPSA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY AG-EASY2B-711
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 9 µA
Input Capacitance (Cies) @ Vce: 21.7 nF @ 25 V
auf Bestellung 19 Stücke:
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AnzahlPrivatkunde
1+156.33 EUR
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FS3L100R07W3S5B11BPSA1 Infineon-FS3L100R07W3S5_B11-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7c72fb9a017c7ef66f72131c
FS3L100R07W3S5B11BPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 650V 70A AG-EASY3B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.38V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY3B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 7 µA
Input Capacitance (Cies) @ Vce: 7.1 nF @ 25 V
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+156.64 EUR
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F4100R06KL4BOSA1
F4100R06KL4BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 600V 130A 430W
Produkt ist nicht verfügbar
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FP75R17N3E4B11BPSA1 Infineon-FP75R17N3E4_B11-DS-v03_00-EN.pdf?fileId=5546d4625d5945ed015d59ef65a00007
FP75R17N3E4B11BPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1700V 150A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.8 nF @ 25 V
auf Bestellung 23 Stücke:
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AnzahlPrivatkunde
2+349.93 EUR
Mindestbestellmenge: 2 Stücke
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FP75R17N3E4PB21BPSA1 infineon-fs75r17w2e4p-b11-datasheet-en.pdf
Hersteller: Infineon Technologies
Description: IGBT MODULE 1700V 125A AG-ECONO3
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 125 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 555 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.8 nF @ 25 V
Produkt ist nicht verfügbar
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BAW56-B5003
BAW56-B5003
Hersteller: Infineon Technologies
Description: HIGH SPEED SWITCHING DIODE
Produkt ist nicht verfügbar
Mindestbestellmenge: 9000 Stücke
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IGW50N65H5 Part_Number_Guide_Web.pdf
IGW50N65H5
Hersteller: Infineon Technologies
Description: IGBT 650V 80A 305W PG-TO247-3
Produkt ist nicht verfügbar
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CY7C1568KV18-500BZXI CY7C1568%2C70KV18.pdf
CY7C1568KV18-500BZXI
Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Memory Organization: 4M x 18
Memory Interface: Parallel
DigiKey Programmable: Not Verified
Package / Case: 165-LBGA
Packaging: Tray
Part Status: Obsolete
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 500 MHz
Technology: SRAM - Synchronous, DDR II+
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 72Mbit
Mounting Type: Surface Mount
auf Bestellung 242 Stücke:
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AnzahlPrivatkunde
2+570.05 EUR
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CY7C1570KV18-500BZC download
CY7C1570KV18-500BZC
Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Memory Organization: 2M x 36
Memory Interface: Parallel
Part Status: Active
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 500 MHz
Technology: SRAM - Synchronous, DDR II+
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 72Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Bulk
auf Bestellung 117 Stücke:
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2+511.71 EUR
Mindestbestellmenge: 2 Stücke
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CY7C25632KV18-500BZXC Infineon-CY7C25632KV18_CY7C25652KV18_72-Mbit_QDR(R)_II+_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec20e0136ec&utm_source=cypress&utm_medium=referra
CY7C25632KV18-500BZXC
Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
DigiKey Programmable: Not Verified
Memory Organization: 4M x 18
Memory Interface: Parallel
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 500 MHz
Technology: SRAM - Synchronous, QDR II+
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 72Mbit
auf Bestellung 58 Stücke:
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1+214.37 EUR
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BGSA147ML10E6327XTSA1 Infineon-BGSA147ML10-DataSheet-v01_00-EN.pdf?fileId=5546d46277921c320177ba20358645ab
BGSA147ML10E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SW SP4T 7.125GHZ TSLP10
Packaging: Cut Tape (CT)
Package / Case: 10-XFQFN
Mounting Type: Surface Mount
Circuit: SP4T
RF Type: General Purpose
Voltage - Supply: 45V
Frequency Range: 400MHz ~ 7.125GHz
Topology: Reflective
Supplier Device Package: PG-TSLP-10-3
auf Bestellung 6089 Stücke:
Lieferzeit 10-14 Tag (e)
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19+1.11 EUR
22+0.96 EUR
25+0.9 EUR
100+0.83 EUR
250+0.79 EUR
500+0.75 EUR
1000+0.71 EUR
Mindestbestellmenge: 19 Stücke
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BGSX44MU18E6327XUSA1 Infineon-BGSX44MU18-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c7c03edb4017c2732b70847e7
BGSX44MU18E6327XUSA1
Hersteller: Infineon Technologies
Description: IC RF SW 4P4T 7.125GHZ WLGA18
Supplier Device Package: PG-WLGA-18-1
Isolation: 27dB
Test Frequency: 7.125GHz
Frequency Range: 400MHz ~ 7.125GHz
Insertion Loss: 1.5dB
Voltage - Supply: 1.6V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Circuit: 4P4T
Impedance: 50Ohm
Package / Case: 18-WFLGA Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BGSX44MU18E6327XUSA1 Infineon-BGSX44MU18-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c7c03edb4017c2732b70847e7
BGSX44MU18E6327XUSA1
Hersteller: Infineon Technologies
Description: IC RF SW 4P4T 7.125GHZ WLGA18
Supplier Device Package: PG-WLGA-18-1
Isolation: 27dB
Test Frequency: 7.125GHz
Frequency Range: 400MHz ~ 7.125GHz
Insertion Loss: 1.5dB
Voltage - Supply: 1.6V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Circuit: 4P4T
Impedance: 50Ohm
Package / Case: 18-WFLGA Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 4578 Stücke:
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6+3.64 EUR
10+2.69 EUR
25+2.45 EUR
100+2.19 EUR
250+2.06 EUR
500+2.01 EUR
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BSZ050N03LSG INFNS16421-1.pdf?t.download=true&u=5oefqw
BSZ050N03LSG
Hersteller: Infineon Technologies
Description: BSZ050N03 - 12V-300V N-CHANNEL P
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
Produkt ist nicht verfügbar
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BSZ050N03MSG INFNS16422-1.pdf?t.download=true&u=5oefqw
BSZ050N03MSG
Hersteller: Infineon Technologies
Description: BSZ050N03 - 12V-300V N-CHANNEL P
Produkt ist nicht verfügbar
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BSM300GA170DLCHOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 600A 2520W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 2520 W
Current - Collector Cutoff (Max): 600 µA
Input Capacitance (Cies) @ Vce: 20 nF @ 25 V
auf Bestellung 838 Stücke:
Lieferzeit 10-14 Tag (e)
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1+367.67 EUR
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FD300R12KS4B5HOSA1 Infineon-FD300R12KS4_B5-DS-v02_00-en_de.pdf?fileId=db3a304318a6cd680118aceb98fa7763
FD300R12KS4B5HOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 370A 1950W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 370 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1950 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 20 nF @ 25 V
auf Bestellung 536 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+247.97 EUR
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BAS16-02VE6327 INFNS13366-1.pdf?t.download=true&u=5oefqw
BAS16-02VE6327
Hersteller: Infineon Technologies
Description: RECTIFIER DIODE, 85V
Produkt ist nicht verfügbar
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K226N3622
Hersteller: Infineon Technologies
Description: AUTOMOTIVE PRESSURE SENSOR
Packaging: Bulk
Part Status: Active
auf Bestellung 2532 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
83+7.64 EUR
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FP15R12KE3GBPSA1 Infineon-FP15R12KE3G-DS-v03_02-en_de.pdf?fileId=db3a304412b407950112b430a8c95181
Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2C-311
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 10A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2C
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 105 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+129.98 EUR
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BTS5045-2EKA INFNS16647-1.pdf?t.download=true&u=5oefqw
BTS5045-2EKA
Hersteller: Infineon Technologies
Description: BTS5045 - PROFET - SMART HIGH SI
Produkt ist nicht verfügbar
Mindestbestellmenge: 43 Stücke
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BAS40E6433 INFNS11688-1.pdf?t.download=true&u=5oefqw
BAS40E6433
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 40V 120MA SOT23-3
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4052+0.14 EUR
Mindestbestellmenge: 4052 Stücke
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IRF7456TRPBF-1 IRF7456PbF-1_11-20-13.pdf
IRF7456TRPBF-1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 16A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 16A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3640 pF @ 15 V
Produkt ist nicht verfügbar
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1MS08017E32W31490NOSA1
Hersteller: Infineon Technologies
Description: MODULE IGBT STACK A-MS2-1
Produkt ist nicht verfügbar
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BAV70E6767 INFNS11270-1.pdf?t.download=true&u=5oefqw
BAV70E6767
Hersteller: Infineon Technologies
Description: DIODE ARRAY GEN PURP 80V 200MA
Current - Reverse Leakage @ Vr: 150 nA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: 150°C
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 96000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8955+0.055 EUR
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CY9AF156NPMC-G-JNE2 Infineon-CY9A150RB_SERIES_32_BIT_ARM_Cortex_M3_FM3_MICROCONTROLLER-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edff429655e
CY9AF156NPMC-G-JNE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 544KB FLASH 100LQFP
Number of I/O: 83
Part Status: Active
Supplier Device Package: 100-LQFP (14x14)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Core Size: 32-Bit Single-Core
Data Converters: A/D 24x12b
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 64K x 8
Program Memory Size: 544KB (544K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
auf Bestellung 68 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.36 EUR
Mindestbestellmenge: 7 Stücke
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CY9AF156NPMC-G-JNE2 Infineon-CY9A150RB_SERIES_32_BIT_ARM_Cortex_M3_FM3_MICROCONTROLLER-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edff429655e
CY9AF156NPMC-G-JNE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 544KB FLASH 100LQFP
Number of I/O: 83
Part Status: Active
Supplier Device Package: 100-LQFP (14x14)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Core Size: 32-Bit Single-Core
Data Converters: A/D 24x12b
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 64K x 8
Program Memory Size: 544KB (544K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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1ED020I12BTXUMA1 INFNS19244-1.pdf?t.download=true&u=5oefqw
1ED020I12BTXUMA1
Hersteller: Infineon Technologies
Description: DGT ISO 4.5KV 1CH GT DVR DSO16
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 4500Vrms
Supplier Device Package: PG-DSO-16-15
Rise / Fall Time (Typ): 30ns, 20ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 4.5V ~ 5.5V
Produkt ist nicht verfügbar
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D4600U45X172XPSA1 Infineon-D4600U45X172-DS-v01_02-EN.pdf?fileId=5546d4625f96303e015fa5e43ef4397a
D4600U45X172XPSA1
Hersteller: Infineon Technologies
Description: DIODE STD 4500V 4450A BGD17226K1
Packaging: Tray
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 4450A
Supplier Device Package: BG-D17226K-1
Operating Temperature - Junction: 140°C (Max)
Voltage - DC Reverse (Vr) (Max): 4500 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 2500 A
Current - Reverse Leakage @ Vr: 25 mA @ 4500 V
Produkt ist nicht verfügbar
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FF600R17ME4B11BPSA1 Infineon-FF600R17ME4_B11-DataSheet-v03_00-EN.pdf?fileId=db3a304333b8a7ca0133c679a07b6151
FF600R17ME4B11BPSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 950A AG-ECONOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 950 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 48 nF @ 25 V
Produkt ist nicht verfügbar
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FF1800R23IE7BPSA1 Infineon-FF1800R23IE7-DataSheet-v01_20-EN.pdf?fileId=8ac78c8c8412f8d30184859ae7390a24
FF1800R23IE7BPSA1
Hersteller: Infineon Technologies
Description: PP IHM I XHP 2.3KV AG-PRIME3+-7
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.26V @ 15V, 1.8kA
NTC Thermistor: No
Supplier Device Package: AG-PRIME3+
Part Status: Active
Current - Collector (Ic) (Max): 1800 A
Voltage - Collector Emitter Breakdown (Max): 2300 V
Current - Collector Cutoff (Max): 30 mA
Input Capacitance (Cies) @ Vce: 420 nF @ 25 V
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+2674.77 EUR
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TT210N12KOFHPSA1 TT210N.pdf
TT210N12KOFHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.2KV MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6600A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 261 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Obsolete
Voltage - Off State: 1.2 kV
Produkt ist nicht verfügbar
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SAA-XC866-2FRA5VBE INFNS15053-1.pdf?t.download=true&u=5oefqw
SAA-XC866-2FRA5VBE
Hersteller: Infineon Technologies
Description: XC800 I-FAMILY MICROCONTROLLER ,
Packaging: Bulk
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 86MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 768 x 8
Operating Temperature: -40°C ~ 140°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: 1Y8x10b SAR
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: SPI, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-4
Number of I/O: 19
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SAA-XC866-2FRABE INFNS15053-1.pdf?t.download=true&u=5oefqw
SAA-XC866-2FRABE
Hersteller: Infineon Technologies
Description: 8051 COMPATIBLE 8-BIT MCU
auf Bestellung 2650 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
192+3.18 EUR
Mindestbestellmenge: 192 Stücke
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SAA-XC866-4FRA INFNS15053-1.pdf?t.download=true&u=5oefqw
SAA-XC866-4FRA
Hersteller: Infineon Technologies
Description: XC800 I-FAMILY MICROCONTROLLER ,
Produkt ist nicht verfügbar
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SAA-XC866-4FRA5VBE INFNS15053-1.pdf?t.download=true&u=5oefqw
SAA-XC866-4FRA5VBE
Hersteller: Infineon Technologies
Description: XC800 I-FAMILY MICROCONTROLLER ,
Produkt ist nicht verfügbar
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SAA-XC8664FRA5VBEAXUMA1 INFNS11218-1.pdf?t.download=true&u=5oefqw
SAA-XC8664FRA5VBEAXUMA1
Hersteller: Infineon Technologies
Description: XC800 I-FAMILY MICROCONTROLLER ,
Packaging: Bulk
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 86MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 768 x 8
Operating Temperature: -40°C ~ 140°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: 1Y8x10b SAR
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: SPI, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-4
Number of I/O: 19
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IHW20N65R5 Infineon-IHW20N65R5-DS-v02_03-EN.pdf?fileId=5546d461464245d30146ae1140b900d8
IHW20N65R5
Hersteller: Infineon Technologies
Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 82 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 20A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24ns/250ns
Switching Energy: 540µJ (on), 160µJ (off)
Test Condition: 400V, 10A, 20Ohm, 15V
Gate Charge: 97 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 150 W
Produkt ist nicht verfügbar
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IPB330P10NMATMA1 Infineon-IPB330P10NM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bc9a628c74f22
IPB330P10NMATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 62A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 53A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5.55mA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+3.65 EUR
Mindestbestellmenge: 1000 Stücke
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IPB330P10NMATMA1 Infineon-IPB330P10NM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bc9a628c74f22
IPB330P10NMATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 62A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 53A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5.55mA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V
auf Bestellung 1513 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.97 EUR
10+6.62 EUR
50+5.18 EUR
100+4.71 EUR
500+4.19 EUR
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IPD18DP10LMATMA1 Infineon-IPD18DP10LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bddd1558c1a43
IPD18DP10LMATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 2V @ 1.04mA
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 178mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 13.9A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPD18DP10LMATMA1 Infineon-IPD18DP10LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bddd1558c1a43
IPD18DP10LMATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 2V @ 1.04mA
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 178mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 13.9A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 1042 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.8 EUR
10+2.42 EUR
50+1.82 EUR
100+1.63 EUR
500+1.3 EUR
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IPD19DP10NMATMA1 Infineon-IPD19DP10NM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bde08b35a1bae
IPD19DP10NMATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta), 13.7A (Tc)
Rds On (Max) @ Id, Vgs: 186mOhm @ 12A, 10V
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.04mA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V
Produkt ist nicht verfügbar
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IPD19DP10NMATMA1 Infineon-IPD19DP10NM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bde08b35a1bae
IPD19DP10NMATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta), 13.7A (Tc)
Rds On (Max) @ Id, Vgs: 186mOhm @ 12A, 10V
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.04mA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V
auf Bestellung 2448 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.53 EUR
10+2.26 EUR
100+1.51 EUR
500+1.2 EUR
1000+1.09 EUR
Mindestbestellmenge: 6 Stücke
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CY14B101NA-ZS45XI Infineon-CY14B101LA_CY14B101NA_1-Mbit_(128_K_8_64_K_16)_nvSRAM-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd6cf32ff4&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY14B101NA-ZS45XI
Hersteller: Infineon Technologies
Description: IC NVSRAM 1MBIT PAR 44TSOP II
DigiKey Programmable: Not Verified
Memory Organization: 64K x 16
Access Time: 45 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 45ns
Supplier Device Package: 44-TSOP II
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Mbit
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Packaging: Bulk
auf Bestellung 668 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
13+47.48 EUR
Mindestbestellmenge: 13 Stücke
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CY7C1263KV18-550BZXC download
CY7C1263KV18-550BZXC
Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
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CY7C1568KV18-550BZXI download
CY7C1568KV18-550BZXI
Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
DigiKey Programmable: Not Verified
Package / Case: 165-LBGA
Packaging: Bulk
Memory Organization: 4M x 18
Memory Interface: Parallel
Part Status: Active
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 550 MHz
Technology: SRAM - Synchronous, DDR II+
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 72Mbit
Mounting Type: Surface Mount
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CY7C1570KV18-550BZXC download
CY7C1570KV18-550BZXC
Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Memory Organization: 2M x 36
Memory Interface: Parallel
Part Status: Active
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 550 MHz
Technology: SRAM - Synchronous, DDR II+
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 72Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Bulk
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CY7C2168KV18-550BZC Infineon-CY7C2168KV18_CY7C2170KV18_18-Mbit_DDR_II+_SRAM_Two-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2014936e0&utm_source=cypress&utm_medium=referral&utm_
CY7C2168KV18-550BZC
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
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5+120.92 EUR
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CY7C2170KV18-550BZXC Infineon-CY7C2168KV18_CY7C2170KV18_18-Mbit_DDR_II+_SRAM_Two-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2014936e0&utm_source=cypress&utm_medium=referral&utm_
CY7C2170KV18-550BZXC
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
auf Bestellung 219 Stücke:
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5+120.92 EUR
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AUIRFN7110TR auirfn7110.pdf?fileId=5546d462533600a4015355b1638a1438
AUIRFN7110TR
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 58A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 35A, 10V
Power Dissipation (Max): 4.3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-PQFN (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3050 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FS600R07A2E3BOSA1
Hersteller: Infineon Technologies
Description: MODULE IGBT 600V HYBRID PACK 2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 400A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Part Status: Obsolete
Current - Collector (Ic) (Max): 530 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 39 nF @ 25 V
Produkt ist nicht verfügbar
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F3L11MR12W2M1B74BOMA1 Infineon-F3L11MR12W2M1_B74-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177b9447dce438e
F3L11MR12W2M1B74BOMA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 100A AG-EASY2B-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B-2
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 9 µA
Input Capacitance (Cies) @ Vce: 21.7 nF @ 25 V
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15+225.33 EUR
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BA595E6327 INFNS15691-1.pdf?t.download=true&u=5oefqw
BA595E6327
Hersteller: Infineon Technologies
Description: BA595 - PIN DIODE
Packaging: Bulk
Package / Case: SC-76, SOD-323
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 10V, 1MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOD323-2-1
Part Status: Active
Current - Max: 50 mA
Produkt ist nicht verfügbar
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BA885E6327 INFNS15691-1.pdf?t.download=true&u=5oefqw
BA885E6327
Hersteller: Infineon Technologies
Description: BA885 - PIN DIODE
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 10V, 1MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT23-3-11
Part Status: Active
Current - Max: 50 mA
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3752+0.17 EUR
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