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IPI60R280C6XKSA1 IPI60R280C6XKSA1 Infineon Technologies IPI60R280C6_2_1.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a30432313ff5e0123a42d44b7273a Description: MOSFET N-CH 600V 13.8A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 430µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
auf Bestellung 2121 Stücke:
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214+2.27 EUR
Mindestbestellmenge: 214
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IAUC100N10S5N040ATMA1 IAUC100N10S5N040ATMA1 Infineon Technologies Infineon-IAUC100N10S5N040-DS-v01_00-EN.pdf?fileId=5546d46264a8de7e0164b70f994060e8 Description: MOSFET N-CH 100V 100A 8TDSON-34
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 90µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BF771E6327HTSA1 BF771E6327HTSA1 Infineon Technologies BF%20771.pdf Description: RF TRANS NPN 12V 8GHZ SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10dB ~ 15dB
Power - Max: 580mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT23
Part Status: Active
auf Bestellung 12000 Stücke:
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3000+0.16 EUR
9000+0.15 EUR
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BAS40B5003 BAS40B5003 Infineon Technologies INFNS09504-1.pdf?t.download=true&u=5oefqw Description: DIODE SCHOTT 40V 120MA PGSOT2333
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 120mA
Supplier Device Package: PG-SOT23-3-3
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Qualification: AEC-Q101
auf Bestellung 107110 Stücke:
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8510+0.065 EUR
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IAUC60N04S6L030HATMA1 IAUC60N04S6L030HATMA1 Infineon Technologies Infineon-IAUC60N04S6L030H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb320175309120315fef Description: MOSFET 2N-CH 40V 60A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 75W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 2128pF @ 25V
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 25µA
Supplier Device Package: PG-TDSON-8-56
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 4685 Stücke:
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IAUC60N04S6L030HATMA1 IAUC60N04S6L030HATMA1 Infineon Technologies Infineon-IAUC60N04S6L030H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb320175309120315fef Description: MOSFET 2N-CH 40V 60A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 75W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 2128pF @ 25V
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 25µA
Supplier Device Package: PG-TDSON-8-56
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 4685 Stücke:
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11+1.6 EUR
12+1.49 EUR
100+1.36 EUR
500+1.29 EUR
1000+1.27 EUR
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CYW43353LIUBGT CYW43353LIUBGT Infineon Technologies Infineon-CYW43353_Single-Chip_5G_MAC_Baseband_Radio_with_Integrated_Bluetooth_4.1_for_Automotive_and_Industrial_Applications-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee21d2b6876&utm_source=cypress&utm_medium=referr Description: IC RF TXRX+MCU BLUTOOTH 145UFBGA
Packaging: Tape & Reel (TR)
Package / Case: 145-UFBGA, WLBGA
Sensitivity: -95.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 13dBm
Protocol: 802.11a/b/g/n, Bluetooth v4.1
Supplier Device Package: 145-WLBGA (4.87x5.41)
GPIO: 9
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, SPI, UART
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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FS75R12W2T4B11BOMA1 FS75R12W2T4B11BOMA1 Infineon Technologies Infineon-FS75R12W2T4_B11-DS-v02_01-en_de.pdf?fileId=db3a304320896aa20120b40c2da2770f Description: IGBT MOD 1200V 107A 375W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 107 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 375 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
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1+106.55 EUR
15+81.61 EUR
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FP35R12N2T7BPSA1 FP35R12N2T7BPSA1 Infineon Technologies Infineon-FP35R12N2T7-DataSheet-v00_30-EN.pdf?fileId=5546d4627aa5d4f5017b0afdea907170 Description: LOW POWER ECONO AG-ECONO2B-711
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 7 µA
Input Capacitance (Cies) @ Vce: 6.62 nF @ 25 V
Produkt ist nicht verfügbar
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FP35R12N2T7B11BPSA1 FP35R12N2T7B11BPSA1 Infineon Technologies Infineon-FP35R12N2T7_B11-DataSheet-v00_10-EN.pdf?fileId=5546d4627aa5d4f5017b0af4bb2d7164 Description: LOW POWER ECONO AG-ECONO2B-711
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 7 µA
Input Capacitance (Cies) @ Vce: 6.62 nF @ 25 V
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1+133.44 EUR
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IR35207MTRPBF Infineon Technologies Description: IC CONTROLLER 40QFN
Packaging: Tape & Reel (TR)
Part Status: Last Time Buy
Produkt ist nicht verfügbar
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IDK16G120C5XTMA1 IDK16G120C5XTMA1 Infineon Technologies Infineon-IDK16G120C5-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e3bf0f4bf0f44 Description: DIODE SIL CARB 1.2KV 40A TO263-1
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 730pF @ 1V, 1MHz
Current - Average Rectified (Io): 40A
Supplier Device Package: PG-TO263-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 16 A
Current - Reverse Leakage @ Vr: 80 µA @ 1200 V
auf Bestellung 437 Stücke:
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2+13.09 EUR
10+8.89 EUR
100+6.52 EUR
Mindestbestellmenge: 2
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ICE5QR1680AGXUMA1 ICE5QR1680AGXUMA1 Infineon Technologies INFN-S-A0003555962-1.pdf?t.download=true&u=5oefqw Description: IC CTLR QUASI-RES FLYBACK 12DSO
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Not For New Designs
Power (Watts): 50 W
auf Bestellung 1776 Stücke:
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260+1.93 EUR
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PX8143JDMG029XTMA1 Infineon Technologies Description: LED PX8143JDMG029XTMA1
Produkt ist nicht verfügbar
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DR11140115NDSA1 Infineon Technologies Description: MODULE GATE DRIVER
Produkt ist nicht verfügbar
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CY7C1061GN30-10BVXI CY7C1061GN30-10BVXI Infineon Technologies Infineon-CY7C1061GN_CY7C10612GN_16-Mbit_(1M_words_16_bit)_Static_RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee280b968f7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
auf Bestellung 1886 Stücke:
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1+28.78 EUR
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PBL38620/2SHAR2B PBL38620/2SHAR2B Infineon Technologies INFNS17909-1.pdf?t.download=true&u=5oefqw Description: FLEXISLIC SLIC
Packaging: Bulk
Package / Case: 24-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Circuit
Interface: 2-Wire
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 2.8mA
Supplier Device Package: PG-SSOP-24-1
Part Status: Active
Number of Circuits: 1
Power (Watts): 290 mW
auf Bestellung 53800 Stücke:
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80+6.33 EUR
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PBL38620/2SOT PBL38620/2SOT Infineon Technologies INFNS17909-1.pdf?t.download=true&u=5oefqw Description: FLEXISLIC SLIC
Packaging: Bulk
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Circuit
Interface: 2-Wire
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 2.8mA
Supplier Device Package: PG-DSO-24-8
Part Status: Active
Number of Circuits: 1
Power (Watts): 290 mW
auf Bestellung 16560 Stücke:
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72+7.01 EUR
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ISZ065N03L5SATMA1 ISZ065N03L5SATMA1 Infineon Technologies Infineon-ISZ065N03L5S-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8cb687b0994 Description: MOSFET N-CH 30V 12A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 15 V
auf Bestellung 12905 Stücke:
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25+0.72 EUR
30+0.6 EUR
100+0.48 EUR
500+0.45 EUR
1000+0.39 EUR
2000+0.37 EUR
Mindestbestellmenge: 25
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ISZ034N06LM5ATMA1 ISZ034N06LM5ATMA1 Infineon Technologies Infineon-ISZ034N06LM5-DataSheet-v02_00-EN.pdf?fileId=5546d4627956d53f01795f6955876aa2 Description: MOSFET N-CH 60V 19A/112A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 112A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 36µA
Supplier Device Package: PG-TSDSON-8-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V
auf Bestellung 4550 Stücke:
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5+4.01 EUR
10+2.61 EUR
100+1.79 EUR
500+1.45 EUR
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IMC101TF048XUMA1 IMC101TF048XUMA1 Infineon Technologies Infineon-IMC100-DataSheet-v01_06-EN.pdf?fileId=5546d46265487f7b016584a0147e7660 Description: PMSM/BLDC MOTOR CONTROLLER
Packaging: Cut Tape (CT)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Current - Output: 50mA
Interface: Analog, PWM
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 5.5V ~ 40V
Applications: Home Appliance
Technology: CMOS
Supplier Device Package: PG-LQFP-48-10
Motor Type - AC, DC: AC, Synchronous
Part Status: Active
auf Bestellung 285 Stücke:
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4+5.84 EUR
10+4.41 EUR
25+4.05 EUR
100+3.66 EUR
250+3.47 EUR
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TLE9564QXXUMA1 TLE9564QXXUMA1 Infineon Technologies Infineon-TLE9564QX-DataSheet-v01_00-EN.pdf?fileId=5546d4627883d7e00178ca35d176387c Description: BLDC_DRIVER_IC PG-VQFN-48
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 250mA
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 6V ~ 28V
Technology: NMOS
Voltage - Load: 6V ~ 28V
Supplier Device Package: PG-VQFN-48-31
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 3569 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.51 EUR
10+4.93 EUR
25+4.53 EUR
100+4.09 EUR
250+3.88 EUR
500+3.75 EUR
1000+3.65 EUR
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TLE9562QXXUMA1 TLE9562QXXUMA1 Infineon Technologies Infineon-TLE9562QX-DataSheet-v01_00-EN.pdf?fileId=5546d4627883d7e00178ca35c75d3879 Description: BLDC_DRIVER_IC PG-VQFN-48
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 250mA
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (4)
Voltage - Supply: 6V ~ 28V
Technology: NMOS
Voltage - Load: 6V ~ 28V
Supplier Device Package: PG-VQFN-48-31
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.79 EUR
10+5.14 EUR
25+4.72 EUR
100+4.27 EUR
250+4.05 EUR
500+3.92 EUR
1000+3.81 EUR
Mindestbestellmenge: 3
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TLE95613QXXUMA1 TLE95613QXXUMA1 Infineon Technologies Infineon-TLE9561-3QX-DataSheet-v01_00-EN.pdf?fileId=5546d4627883d7e00178ca359c2e386d Description: BLDC_DRIVER_IC PG-VQFN-48
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 250mA
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (4)
Voltage - Supply: 6V ~ 28V
Technology: NMOS
Voltage - Load: 6V ~ 28V
Supplier Device Package: PG-VQFN-48-31
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.72 EUR
10+5.08 EUR
25+4.67 EUR
100+4.22 EUR
250+4 EUR
500+3.87 EUR
1000+3.77 EUR
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TLE95623QXXUMA1 TLE95623QXXUMA1 Infineon Technologies Infineon-TLE9562-3QX-DataSheet-v01_00-EN.pdf?fileId=5546d4627883d7e00178ca35b1603873 Description: BLDC_DRIVER_IC PG-VQFN-48
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 250mA
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (4)
Voltage - Supply: 6V ~ 28V
Technology: NMOS
Voltage - Load: 6V ~ 28V
Supplier Device Package: PG-VQFN-48-31
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 1045 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.95 EUR
10+5.27 EUR
25+4.84 EUR
100+4.38 EUR
250+4.16 EUR
500+4.02 EUR
1000+3.91 EUR
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IPTC012N08NM5ATMA1 IPTC012N08NM5ATMA1 Infineon Technologies Infineon-IPTC012N08NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177a519df392538 Description: MOSFET N-CH 80V 40A/396A HDSOP
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 396A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: PG-HDSOP-16-2
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 219 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 40 V
auf Bestellung 136 Stücke:
Lieferzeit 10-14 Tag (e)
2+14.77 EUR
10+10.1 EUR
100+7.46 EUR
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FF225R65T3E3BPSA1 FF225R65T3E3BPSA1 Infineon Technologies Infineon-FF225R65T3E3-DataSheet-v01_10-EN.pdf?fileId=5546d4627a0b0c7b017a0ea3ac750464 Description: IHV IHM T XHP 3 3-6 5K AG-XHP3K6
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 225A
NTC Thermistor: No
Supplier Device Package: AG-XHP3K65
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 225 A
Voltage - Collector Emitter Breakdown (Max): 5900 V
Power - Max: 1000000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 65.6 nF @ 25 V
Produkt ist nicht verfügbar
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LEDFRONTHBLBREFTOBO1 LEDFRONTHBLBREFTOBO1 Infineon Technologies Infineon-TLD5099EP-Front_light-SEPIC-UserManual-v01_00-EN.pdf?fileId=5546d46274306ce1017433fa5bd560d9 Description: DEV KIT
Packaging: Bulk
Function: Clock Generator
Type: Timing
Supplied Contents: Board(s)
Part Status: Active
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
1+386.6 EUR
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FS25R12W1T4PBPSA1 Infineon Technologies Description: IGBT MODULE 1200V 45A 205W EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B-1
IGBT Type: Trench Field Stop
Part Status: Obsolete
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 205 W
Current - Collector Cutoff (Max): 1 mA
Produkt ist nicht verfügbar
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FS75R07N2E4_B11 FS75R07N2E4_B11 Infineon Technologies INFNS28594-1.pdf?t.download=true&u=5oefqw Description: FS75R07 - IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.6 nF @ 25 V
Produkt ist nicht verfügbar
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FS75R07N2E4BOSA1 Infineon Technologies Infineon-FS75R07N2E4-DS-v02_00-en_de.pdf?fileId=db3a30432f5008fe012f52f916333979 Description: IGBT MODULE 650V 75A 250W
Produkt ist nicht verfügbar
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FS75R07N2E4B11BOSA1 FS75R07N2E4B11BOSA1 Infineon Technologies Infineon-FS75R07N2E4_B11-DS-v02_00-en_de.pdf?fileId=db3a3043300464130130401d2e50571e Description: IGBT MODULE 650V 75A 250W
Produkt ist nicht verfügbar
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FS75R07N2E4B11BOSA1 FS75R07N2E4B11BOSA1 Infineon Technologies Infineon-FS75R07N2E4_B11-DS-v02_00-en_de.pdf?fileId=db3a3043300464130130401d2e50571e Description: FS75R07 - IGBT MODULE
Produkt ist nicht verfügbar
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IPDD60R055CFD7XTMA1 IPDD60R055CFD7XTMA1 Infineon Technologies Infineon-IPDD60R055CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751c133bde4271 Description: MOSFET N-CH 600V 52A HDSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 15.1A, 10V
Power Dissipation (Max): 329W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 760µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2724 pF @ 400 V
Produkt ist nicht verfügbar
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IPDD60R055CFD7XTMA1 IPDD60R055CFD7XTMA1 Infineon Technologies Infineon-IPDD60R055CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751c133bde4271 Description: MOSFET N-CH 600V 52A HDSOP-10
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 15.1A, 10V
Power Dissipation (Max): 329W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 760µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2724 pF @ 400 V
auf Bestellung 1335 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.3 EUR
10+8.01 EUR
100+5.92 EUR
500+5.06 EUR
Mindestbestellmenge: 2
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IPDD60R045CFD7XTMA1 IPDD60R045CFD7XTMA1 Infineon Technologies Infineon-IPDD60R045CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751c2e742942a8 Description: MOSFET N-CH 600V 61A HDSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 18A, 10V
Power Dissipation (Max): 379W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3194 pF @ 400 V
Produkt ist nicht verfügbar
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IPDD60R075CFD7XTMA1 IPDD60R075CFD7XTMA1 Infineon Technologies Infineon-IPDD60R075CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751c00e6964257 Description: MOSFET N-CH 600V 40A HDSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 11.4A, 10V
Power Dissipation (Max): 266W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 570µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2102 pF @ 400 V
Produkt ist nicht verfügbar
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IPDD60R075CFD7XTMA1 IPDD60R075CFD7XTMA1 Infineon Technologies Infineon-IPDD60R075CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751c00e6964257 Description: MOSFET N-CH 600V 40A HDSOP-10
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 11.4A, 10V
Power Dissipation (Max): 266W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 570µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2102 pF @ 400 V
auf Bestellung 1643 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.49 EUR
10+6.36 EUR
100+4.59 EUR
500+4.56 EUR
Mindestbestellmenge: 2
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CY7C1387D-167AXC CY7C1387D-167AXC Infineon Technologies ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 18MBIT PAR 100TQFP
auf Bestellung 348 Stücke:
Lieferzeit 10-14 Tag (e)
13+41.88 EUR
Mindestbestellmenge: 13
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IPT60R075CFD7XTMA1 IPT60R075CFD7XTMA1 Infineon Technologies Infineon-IPT60R075CFD7-DataSheet-v02_01-EN.pdf?fileId=5546d46271bf4f920171df2a0edb30e3 Description: MOSFET N-CH 600V 33A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 11.4A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 570µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 400 V
auf Bestellung 1099 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.61 EUR
10+6.76 EUR
100+4.88 EUR
500+4.09 EUR
Mindestbestellmenge: 2
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IPT60R040S7XTMA1 IPT60R040S7XTMA1 Infineon Technologies Infineon-IPT60R040S7-DataSheet-v02_01-EN.pdf?fileId=5546d4626bb628d7016bc266ace577b2 Description: MOSFET N-CH 600V 13A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 3127 pF @ 300 V
Produkt ist nicht verfügbar
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IPT60R040S7XTMA1 IPT60R040S7XTMA1 Infineon Technologies Infineon-IPT60R040S7-DataSheet-v02_01-EN.pdf?fileId=5546d4626bb628d7016bc266ace577b2 Description: MOSFET N-CH 600V 13A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 3127 pF @ 300 V
auf Bestellung 1965 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.41 EUR
10+8.41 EUR
100+6.16 EUR
500+5.43 EUR
Mindestbestellmenge: 2
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IPT60R045CFD7XTMA1 IPT60R045CFD7XTMA1 Infineon Technologies Infineon-IPT60R045CFD7-DataSheet-v02_01-EN.pdf?fileId=5546d46271bf4f920171df2a61cc30ec Description: MOSFET N-CH 600V 52A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 18A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3194 pF @ 400 V
auf Bestellung 3903 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.67 EUR
10+8.24 EUR
100+6.33 EUR
Mindestbestellmenge: 2
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IPT60R035CFD7XTMA1 IPT60R035CFD7XTMA1 Infineon Technologies Infineon-IPT60R035CFD7-DataSheet-v02_01-EN.pdf?fileId=5546d46271bf4f920171df2a2c2130e6 Description: MOSFET N-CH 600V 67A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 24.9A, 10V
Power Dissipation (Max): 351W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.25mA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4354 pF @ 400 V
auf Bestellung 2890 Stücke:
Lieferzeit 10-14 Tag (e)
2+13.46 EUR
10+9.65 EUR
100+7.72 EUR
Mindestbestellmenge: 2
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IPT60R145CFD7XTMA1 IPT60R145CFD7XTMA1 Infineon Technologies Infineon-IPT60R145CFD7-DataSheet-v02_01-EN.pdf?fileId=5546d46271bf4f920171df45b2483180 Description: MOSFET N-CH 600V 19A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 6A, 10V
Power Dissipation (Max): 116W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1199 pF @ 400 V
Produkt ist nicht verfügbar
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IPT60R145CFD7XTMA1 IPT60R145CFD7XTMA1 Infineon Technologies Infineon-IPT60R145CFD7-DataSheet-v02_01-EN.pdf?fileId=5546d46271bf4f920171df45b2483180 Description: MOSFET N-CH 600V 19A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 6A, 10V
Power Dissipation (Max): 116W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1199 pF @ 400 V
auf Bestellung 1241 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.83 EUR
10+4.5 EUR
100+3.17 EUR
500+2.6 EUR
1000+2.42 EUR
Mindestbestellmenge: 3
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IPT60R105CFD7XTMA1 IPT60R105CFD7XTMA1 Infineon Technologies Infineon-IPT60R105CFD7-DataSheet-v02_01-EN.pdf?fileId=5546d46271bf4f920171df2a7e5530ef Description: MOSFET N-CH 600V 24A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 7.8A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 390µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1503 pF @ 400 V
Produkt ist nicht verfügbar
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IPT60R105CFD7XTMA1 IPT60R105CFD7XTMA1 Infineon Technologies Infineon-IPT60R105CFD7-DataSheet-v02_01-EN.pdf?fileId=5546d46271bf4f920171df2a7e5530ef Description: MOSFET N-CH 600V 24A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 7.8A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 390µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1503 pF @ 400 V
auf Bestellung 335 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.09 EUR
10+4.55 EUR
100+3.31 EUR
Mindestbestellmenge: 3
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TLS208D1EJV33XUMA1 TLS208D1EJV33XUMA1 Infineon Technologies INFN-S-A0001299229-1.pdf?t.download=true&u=5oefqw Description: IC REG LINEAR 3.3V 800MA 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 170 µA
Voltage - Input (Max): 18V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable, Reset
Grade: Automotive
Part Status: Active
PSRR: 62dB (10kHz)
Voltage Dropout (Max): 1V @ 800mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 250 µA
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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FF600R07ME4B11BPSA1 FF600R07ME4B11BPSA1 Infineon Technologies Infineon-FF600R07ME4_B11-DS-v03_01-EN.pdf?fileId=db3a304334c41e910134e5a1098f5412 Description: MEDIUM POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 700 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1800 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
1+194.8 EUR
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BFP540 BFP540 Infineon Technologies INFNS30134-1.pdf?t.download=true&u=5oefqw Description: RF SMALL SIGNAL BIPOLAR TRANSIST
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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BFP 540F E6327 BFP 540F E6327 Infineon Technologies BFP%20540F%20E6327.pdf Description: RF TRANS NPN 5V 30GHZ 4TSFP
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 20dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V
Frequency - Transition: 30GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz
Supplier Device Package: 4-TSFP
Part Status: Obsolete
Produkt ist nicht verfügbar
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BFP540FESDE6327 BFP540FESDE6327 Infineon Technologies Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920 Description: RF TRANS NPN 5V 30GHZ 4-TSFP
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 20dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V
Frequency - Transition: 30GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz
Supplier Device Package: 4-TSFP
Part Status: Obsolete
Produkt ist nicht verfügbar
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BFP540E6327BTSA1 BFP540E6327BTSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: RF TRANS NPN 5V 30GHZ PG-SOT-343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21.5dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V
Frequency - Transition: 30GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Obsolete
Produkt ist nicht verfügbar
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BFP540ESDE6327HTSA1 BFP540ESDE6327HTSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: RF TRANS NPN 5V 30GHZ PG-SOT-343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21.5dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V
Frequency - Transition: 30GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Obsolete
Produkt ist nicht verfügbar
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BFP540ESDE6327HTSA1 BFP540ESDE6327HTSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: RF TRANS NPN 5V 30GHZ PG-SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21.5dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V
Frequency - Transition: 30GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Obsolete
Produkt ist nicht verfügbar
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IPD60R210CFD7ATMA1 IPD60R210CFD7ATMA1 Infineon Technologies Infineon-IPD60R210CFD7-DataSheet-v02_02-EN.pdf?fileId=5546d46262b31d2e01633a2feadc39b8 Description: MOSFET N CH
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 4.9A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 240µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.57 EUR
Mindestbestellmenge: 2500
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IPD60R210CFD7ATMA1 IPD60R210CFD7ATMA1 Infineon Technologies Infineon-IPD60R210CFD7-DataSheet-v02_02-EN.pdf?fileId=5546d46262b31d2e01633a2feadc39b8 Description: MOSFET N CH
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 4.9A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 240µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V
auf Bestellung 2964 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.98 EUR
10+3.22 EUR
100+2.23 EUR
500+1.81 EUR
1000+1.67 EUR
Mindestbestellmenge: 4
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IPD60R1K0PFD7SAUMA1 IPD60R1K0PFD7SAUMA1 Infineon Technologies Infineon-IPD60R1K0PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626eab8fbf016ed6256d5839ef Description: CONSUMER PG-TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1A, 10V
Power Dissipation (Max): 26W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 400 V
Produkt ist nicht verfügbar
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IPD60R145CFD7ATMA1 IPD60R145CFD7ATMA1 Infineon Technologies Infineon-IPD60R145CFD7-DataSheet-v02_02-EN.pdf?fileId=5546d46262b31d2e01635ebca8052a8d Description: MOSFET N CH
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 6.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.74 EUR
Mindestbestellmenge: 2500
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IPI60R280C6XKSA1 IPI60R280C6_2_1.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a30432313ff5e0123a42d44b7273a
IPI60R280C6XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 13.8A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 430µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
auf Bestellung 2121 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
214+2.27 EUR
Mindestbestellmenge: 214
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IAUC100N10S5N040ATMA1 Infineon-IAUC100N10S5N040-DS-v01_00-EN.pdf?fileId=5546d46264a8de7e0164b70f994060e8
IAUC100N10S5N040ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 100A 8TDSON-34
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 90µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BF771E6327HTSA1 BF%20771.pdf
BF771E6327HTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 12V 8GHZ SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10dB ~ 15dB
Power - Max: 580mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT23
Part Status: Active
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.16 EUR
9000+0.15 EUR
Mindestbestellmenge: 3000
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BAS40B5003 INFNS09504-1.pdf?t.download=true&u=5oefqw
BAS40B5003
Hersteller: Infineon Technologies
Description: DIODE SCHOTT 40V 120MA PGSOT2333
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 120mA
Supplier Device Package: PG-SOT23-3-3
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Qualification: AEC-Q101
auf Bestellung 107110 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8510+0.065 EUR
Mindestbestellmenge: 8510
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IAUC60N04S6L030HATMA1 Infineon-IAUC60N04S6L030H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb320175309120315fef
IAUC60N04S6L030HATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 40V 60A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 75W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 2128pF @ 25V
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 25µA
Supplier Device Package: PG-TDSON-8-56
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 4685 Stücke:
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IAUC60N04S6L030HATMA1 Infineon-IAUC60N04S6L030H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb320175309120315fef
IAUC60N04S6L030HATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 40V 60A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 75W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 2128pF @ 25V
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 25µA
Supplier Device Package: PG-TDSON-8-56
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 4685 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.6 EUR
12+1.49 EUR
100+1.36 EUR
500+1.29 EUR
1000+1.27 EUR
Mindestbestellmenge: 11
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CYW43353LIUBGT Infineon-CYW43353_Single-Chip_5G_MAC_Baseband_Radio_with_Integrated_Bluetooth_4.1_for_Automotive_and_Industrial_Applications-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee21d2b6876&utm_source=cypress&utm_medium=referr
CYW43353LIUBGT
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLUTOOTH 145UFBGA
Packaging: Tape & Reel (TR)
Package / Case: 145-UFBGA, WLBGA
Sensitivity: -95.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 13dBm
Protocol: 802.11a/b/g/n, Bluetooth v4.1
Supplier Device Package: 145-WLBGA (4.87x5.41)
GPIO: 9
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, SPI, UART
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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FS75R12W2T4B11BOMA1 Infineon-FS75R12W2T4_B11-DS-v02_01-en_de.pdf?fileId=db3a304320896aa20120b40c2da2770f
FS75R12W2T4B11BOMA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 107A 375W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 107 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 375 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
auf Bestellung 17 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+106.55 EUR
15+81.61 EUR
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FP35R12N2T7BPSA1 Infineon-FP35R12N2T7-DataSheet-v00_30-EN.pdf?fileId=5546d4627aa5d4f5017b0afdea907170
FP35R12N2T7BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2B-711
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 7 µA
Input Capacitance (Cies) @ Vce: 6.62 nF @ 25 V
Produkt ist nicht verfügbar
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FP35R12N2T7B11BPSA1 Infineon-FP35R12N2T7_B11-DataSheet-v00_10-EN.pdf?fileId=5546d4627aa5d4f5017b0af4bb2d7164
FP35R12N2T7B11BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2B-711
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 7 µA
Input Capacitance (Cies) @ Vce: 6.62 nF @ 25 V
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+133.44 EUR
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IR35207MTRPBF
Hersteller: Infineon Technologies
Description: IC CONTROLLER 40QFN
Packaging: Tape & Reel (TR)
Part Status: Last Time Buy
Produkt ist nicht verfügbar
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IDK16G120C5XTMA1 Infineon-IDK16G120C5-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e3bf0f4bf0f44
IDK16G120C5XTMA1
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 1.2KV 40A TO263-1
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 730pF @ 1V, 1MHz
Current - Average Rectified (Io): 40A
Supplier Device Package: PG-TO263-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 16 A
Current - Reverse Leakage @ Vr: 80 µA @ 1200 V
auf Bestellung 437 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.09 EUR
10+8.89 EUR
100+6.52 EUR
Mindestbestellmenge: 2
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ICE5QR1680AGXUMA1 INFN-S-A0003555962-1.pdf?t.download=true&u=5oefqw
ICE5QR1680AGXUMA1
Hersteller: Infineon Technologies
Description: IC CTLR QUASI-RES FLYBACK 12DSO
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Not For New Designs
Power (Watts): 50 W
auf Bestellung 1776 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
260+1.93 EUR
Mindestbestellmenge: 260
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PX8143JDMG029XTMA1
Hersteller: Infineon Technologies
Description: LED PX8143JDMG029XTMA1
Produkt ist nicht verfügbar
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DR11140115NDSA1
Hersteller: Infineon Technologies
Description: MODULE GATE DRIVER
Produkt ist nicht verfügbar
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CY7C1061GN30-10BVXI Infineon-CY7C1061GN_CY7C10612GN_16-Mbit_(1M_words_16_bit)_Static_RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee280b968f7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C1061GN30-10BVXI
Hersteller: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
auf Bestellung 1886 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+28.78 EUR
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PBL38620/2SHAR2B INFNS17909-1.pdf?t.download=true&u=5oefqw
PBL38620/2SHAR2B
Hersteller: Infineon Technologies
Description: FLEXISLIC SLIC
Packaging: Bulk
Package / Case: 24-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Circuit
Interface: 2-Wire
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 2.8mA
Supplier Device Package: PG-SSOP-24-1
Part Status: Active
Number of Circuits: 1
Power (Watts): 290 mW
auf Bestellung 53800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
80+6.33 EUR
Mindestbestellmenge: 80
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PBL38620/2SOT INFNS17909-1.pdf?t.download=true&u=5oefqw
PBL38620/2SOT
Hersteller: Infineon Technologies
Description: FLEXISLIC SLIC
Packaging: Bulk
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Circuit
Interface: 2-Wire
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 2.8mA
Supplier Device Package: PG-DSO-24-8
Part Status: Active
Number of Circuits: 1
Power (Watts): 290 mW
auf Bestellung 16560 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
72+7.01 EUR
Mindestbestellmenge: 72
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ISZ065N03L5SATMA1 Infineon-ISZ065N03L5S-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8cb687b0994
ISZ065N03L5SATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 12A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 15 V
auf Bestellung 12905 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.72 EUR
30+0.6 EUR
100+0.48 EUR
500+0.45 EUR
1000+0.39 EUR
2000+0.37 EUR
Mindestbestellmenge: 25
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ISZ034N06LM5ATMA1 Infineon-ISZ034N06LM5-DataSheet-v02_00-EN.pdf?fileId=5546d4627956d53f01795f6955876aa2
ISZ034N06LM5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 19A/112A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 112A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 36µA
Supplier Device Package: PG-TSDSON-8-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V
auf Bestellung 4550 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.01 EUR
10+2.61 EUR
100+1.79 EUR
500+1.45 EUR
Mindestbestellmenge: 5
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IMC101TF048XUMA1 Infineon-IMC100-DataSheet-v01_06-EN.pdf?fileId=5546d46265487f7b016584a0147e7660
IMC101TF048XUMA1
Hersteller: Infineon Technologies
Description: PMSM/BLDC MOTOR CONTROLLER
Packaging: Cut Tape (CT)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Current - Output: 50mA
Interface: Analog, PWM
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 5.5V ~ 40V
Applications: Home Appliance
Technology: CMOS
Supplier Device Package: PG-LQFP-48-10
Motor Type - AC, DC: AC, Synchronous
Part Status: Active
auf Bestellung 285 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.84 EUR
10+4.41 EUR
25+4.05 EUR
100+3.66 EUR
250+3.47 EUR
Mindestbestellmenge: 4
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TLE9564QXXUMA1 Infineon-TLE9564QX-DataSheet-v01_00-EN.pdf?fileId=5546d4627883d7e00178ca35d176387c
TLE9564QXXUMA1
Hersteller: Infineon Technologies
Description: BLDC_DRIVER_IC PG-VQFN-48
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 250mA
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 6V ~ 28V
Technology: NMOS
Voltage - Load: 6V ~ 28V
Supplier Device Package: PG-VQFN-48-31
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 3569 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.51 EUR
10+4.93 EUR
25+4.53 EUR
100+4.09 EUR
250+3.88 EUR
500+3.75 EUR
1000+3.65 EUR
Mindestbestellmenge: 3
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TLE9562QXXUMA1 Infineon-TLE9562QX-DataSheet-v01_00-EN.pdf?fileId=5546d4627883d7e00178ca35c75d3879
TLE9562QXXUMA1
Hersteller: Infineon Technologies
Description: BLDC_DRIVER_IC PG-VQFN-48
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 250mA
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (4)
Voltage - Supply: 6V ~ 28V
Technology: NMOS
Voltage - Load: 6V ~ 28V
Supplier Device Package: PG-VQFN-48-31
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.79 EUR
10+5.14 EUR
25+4.72 EUR
100+4.27 EUR
250+4.05 EUR
500+3.92 EUR
1000+3.81 EUR
Mindestbestellmenge: 3
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TLE95613QXXUMA1 Infineon-TLE9561-3QX-DataSheet-v01_00-EN.pdf?fileId=5546d4627883d7e00178ca359c2e386d
TLE95613QXXUMA1
Hersteller: Infineon Technologies
Description: BLDC_DRIVER_IC PG-VQFN-48
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 250mA
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (4)
Voltage - Supply: 6V ~ 28V
Technology: NMOS
Voltage - Load: 6V ~ 28V
Supplier Device Package: PG-VQFN-48-31
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.72 EUR
10+5.08 EUR
25+4.67 EUR
100+4.22 EUR
250+4 EUR
500+3.87 EUR
1000+3.77 EUR
Mindestbestellmenge: 3
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TLE95623QXXUMA1 Infineon-TLE9562-3QX-DataSheet-v01_00-EN.pdf?fileId=5546d4627883d7e00178ca35b1603873
TLE95623QXXUMA1
Hersteller: Infineon Technologies
Description: BLDC_DRIVER_IC PG-VQFN-48
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 250mA
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (4)
Voltage - Supply: 6V ~ 28V
Technology: NMOS
Voltage - Load: 6V ~ 28V
Supplier Device Package: PG-VQFN-48-31
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 1045 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.95 EUR
10+5.27 EUR
25+4.84 EUR
100+4.38 EUR
250+4.16 EUR
500+4.02 EUR
1000+3.91 EUR
Mindestbestellmenge: 3
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IPTC012N08NM5ATMA1 Infineon-IPTC012N08NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177a519df392538
IPTC012N08NM5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 40A/396A HDSOP
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 396A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: PG-HDSOP-16-2
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 219 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 40 V
auf Bestellung 136 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+14.77 EUR
10+10.1 EUR
100+7.46 EUR
Mindestbestellmenge: 2
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FF225R65T3E3BPSA1 Infineon-FF225R65T3E3-DataSheet-v01_10-EN.pdf?fileId=5546d4627a0b0c7b017a0ea3ac750464
FF225R65T3E3BPSA1
Hersteller: Infineon Technologies
Description: IHV IHM T XHP 3 3-6 5K AG-XHP3K6
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 225A
NTC Thermistor: No
Supplier Device Package: AG-XHP3K65
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 225 A
Voltage - Collector Emitter Breakdown (Max): 5900 V
Power - Max: 1000000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 65.6 nF @ 25 V
Produkt ist nicht verfügbar
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LEDFRONTHBLBREFTOBO1 Infineon-TLD5099EP-Front_light-SEPIC-UserManual-v01_00-EN.pdf?fileId=5546d46274306ce1017433fa5bd560d9
LEDFRONTHBLBREFTOBO1
Hersteller: Infineon Technologies
Description: DEV KIT
Packaging: Bulk
Function: Clock Generator
Type: Timing
Supplied Contents: Board(s)
Part Status: Active
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+386.6 EUR
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FS25R12W1T4PBPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 45A 205W EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B-1
IGBT Type: Trench Field Stop
Part Status: Obsolete
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 205 W
Current - Collector Cutoff (Max): 1 mA
Produkt ist nicht verfügbar
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FS75R07N2E4_B11 INFNS28594-1.pdf?t.download=true&u=5oefqw
FS75R07N2E4_B11
Hersteller: Infineon Technologies
Description: FS75R07 - IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.6 nF @ 25 V
Produkt ist nicht verfügbar
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FS75R07N2E4BOSA1 Infineon-FS75R07N2E4-DS-v02_00-en_de.pdf?fileId=db3a30432f5008fe012f52f916333979
Hersteller: Infineon Technologies
Description: IGBT MODULE 650V 75A 250W
Produkt ist nicht verfügbar
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FS75R07N2E4B11BOSA1 Infineon-FS75R07N2E4_B11-DS-v02_00-en_de.pdf?fileId=db3a3043300464130130401d2e50571e
FS75R07N2E4B11BOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 650V 75A 250W
Produkt ist nicht verfügbar
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FS75R07N2E4B11BOSA1 Infineon-FS75R07N2E4_B11-DS-v02_00-en_de.pdf?fileId=db3a3043300464130130401d2e50571e
FS75R07N2E4B11BOSA1
Hersteller: Infineon Technologies
Description: FS75R07 - IGBT MODULE
Produkt ist nicht verfügbar
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IPDD60R055CFD7XTMA1 Infineon-IPDD60R055CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751c133bde4271
IPDD60R055CFD7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 52A HDSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 15.1A, 10V
Power Dissipation (Max): 329W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 760µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2724 pF @ 400 V
Produkt ist nicht verfügbar
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IPDD60R055CFD7XTMA1 Infineon-IPDD60R055CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751c133bde4271
IPDD60R055CFD7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 52A HDSOP-10
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 15.1A, 10V
Power Dissipation (Max): 329W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 760µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2724 pF @ 400 V
auf Bestellung 1335 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.3 EUR
10+8.01 EUR
100+5.92 EUR
500+5.06 EUR
Mindestbestellmenge: 2
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IPDD60R045CFD7XTMA1 Infineon-IPDD60R045CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751c2e742942a8
IPDD60R045CFD7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 61A HDSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 18A, 10V
Power Dissipation (Max): 379W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3194 pF @ 400 V
Produkt ist nicht verfügbar
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IPDD60R075CFD7XTMA1 Infineon-IPDD60R075CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751c00e6964257
IPDD60R075CFD7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 40A HDSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 11.4A, 10V
Power Dissipation (Max): 266W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 570µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2102 pF @ 400 V
Produkt ist nicht verfügbar
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IPDD60R075CFD7XTMA1 Infineon-IPDD60R075CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751c00e6964257
IPDD60R075CFD7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 40A HDSOP-10
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 11.4A, 10V
Power Dissipation (Max): 266W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 570µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2102 pF @ 400 V
auf Bestellung 1643 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.49 EUR
10+6.36 EUR
100+4.59 EUR
500+4.56 EUR
Mindestbestellmenge: 2
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CY7C1387D-167AXC ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C1387D-167AXC
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PAR 100TQFP
auf Bestellung 348 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+41.88 EUR
Mindestbestellmenge: 13
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IPT60R075CFD7XTMA1 Infineon-IPT60R075CFD7-DataSheet-v02_01-EN.pdf?fileId=5546d46271bf4f920171df2a0edb30e3
IPT60R075CFD7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 33A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 11.4A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 570µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 400 V
auf Bestellung 1099 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.61 EUR
10+6.76 EUR
100+4.88 EUR
500+4.09 EUR
Mindestbestellmenge: 2
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IPT60R040S7XTMA1 Infineon-IPT60R040S7-DataSheet-v02_01-EN.pdf?fileId=5546d4626bb628d7016bc266ace577b2
IPT60R040S7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 13A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 3127 pF @ 300 V
Produkt ist nicht verfügbar
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IPT60R040S7XTMA1 Infineon-IPT60R040S7-DataSheet-v02_01-EN.pdf?fileId=5546d4626bb628d7016bc266ace577b2
IPT60R040S7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 13A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 3127 pF @ 300 V
auf Bestellung 1965 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.41 EUR
10+8.41 EUR
100+6.16 EUR
500+5.43 EUR
Mindestbestellmenge: 2
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IPT60R045CFD7XTMA1 Infineon-IPT60R045CFD7-DataSheet-v02_01-EN.pdf?fileId=5546d46271bf4f920171df2a61cc30ec
IPT60R045CFD7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 52A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 18A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3194 pF @ 400 V
auf Bestellung 3903 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.67 EUR
10+8.24 EUR
100+6.33 EUR
Mindestbestellmenge: 2
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IPT60R035CFD7XTMA1 Infineon-IPT60R035CFD7-DataSheet-v02_01-EN.pdf?fileId=5546d46271bf4f920171df2a2c2130e6
IPT60R035CFD7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 67A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 24.9A, 10V
Power Dissipation (Max): 351W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.25mA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4354 pF @ 400 V
auf Bestellung 2890 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.46 EUR
10+9.65 EUR
100+7.72 EUR
Mindestbestellmenge: 2
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IPT60R145CFD7XTMA1 Infineon-IPT60R145CFD7-DataSheet-v02_01-EN.pdf?fileId=5546d46271bf4f920171df45b2483180
IPT60R145CFD7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 19A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 6A, 10V
Power Dissipation (Max): 116W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1199 pF @ 400 V
Produkt ist nicht verfügbar
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IPT60R145CFD7XTMA1 Infineon-IPT60R145CFD7-DataSheet-v02_01-EN.pdf?fileId=5546d46271bf4f920171df45b2483180
IPT60R145CFD7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 19A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 6A, 10V
Power Dissipation (Max): 116W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1199 pF @ 400 V
auf Bestellung 1241 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.83 EUR
10+4.5 EUR
100+3.17 EUR
500+2.6 EUR
1000+2.42 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IPT60R105CFD7XTMA1 Infineon-IPT60R105CFD7-DataSheet-v02_01-EN.pdf?fileId=5546d46271bf4f920171df2a7e5530ef
IPT60R105CFD7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 24A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 7.8A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 390µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1503 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPT60R105CFD7XTMA1 Infineon-IPT60R105CFD7-DataSheet-v02_01-EN.pdf?fileId=5546d46271bf4f920171df2a7e5530ef
IPT60R105CFD7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 24A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 7.8A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 390µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1503 pF @ 400 V
auf Bestellung 335 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.09 EUR
10+4.55 EUR
100+3.31 EUR
Mindestbestellmenge: 3
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TLS208D1EJV33XUMA1 INFN-S-A0001299229-1.pdf?t.download=true&u=5oefqw
TLS208D1EJV33XUMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR 3.3V 800MA 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 170 µA
Voltage - Input (Max): 18V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable, Reset
Grade: Automotive
Part Status: Active
PSRR: 62dB (10kHz)
Voltage Dropout (Max): 1V @ 800mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 250 µA
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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FF600R07ME4B11BPSA1 Infineon-FF600R07ME4_B11-DS-v03_01-EN.pdf?fileId=db3a304334c41e910134e5a1098f5412
FF600R07ME4B11BPSA1
Hersteller: Infineon Technologies
Description: MEDIUM POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 700 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1800 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+194.8 EUR
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BFP540 INFNS30134-1.pdf?t.download=true&u=5oefqw
BFP540
Hersteller: Infineon Technologies
Description: RF SMALL SIGNAL BIPOLAR TRANSIST
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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BFP 540F E6327 BFP%20540F%20E6327.pdf
BFP 540F E6327
Hersteller: Infineon Technologies
Description: RF TRANS NPN 5V 30GHZ 4TSFP
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 20dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V
Frequency - Transition: 30GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz
Supplier Device Package: 4-TSFP
Part Status: Obsolete
Produkt ist nicht verfügbar
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BFP540FESDE6327 Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920
BFP540FESDE6327
Hersteller: Infineon Technologies
Description: RF TRANS NPN 5V 30GHZ 4-TSFP
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 20dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V
Frequency - Transition: 30GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz
Supplier Device Package: 4-TSFP
Part Status: Obsolete
Produkt ist nicht verfügbar
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BFP540E6327BTSA1 fundamentals-of-power-semiconductors
BFP540E6327BTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 5V 30GHZ PG-SOT-343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21.5dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V
Frequency - Transition: 30GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Obsolete
Produkt ist nicht verfügbar
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BFP540ESDE6327HTSA1 fundamentals-of-power-semiconductors
BFP540ESDE6327HTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 5V 30GHZ PG-SOT-343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21.5dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V
Frequency - Transition: 30GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BFP540ESDE6327HTSA1 fundamentals-of-power-semiconductors
BFP540ESDE6327HTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 5V 30GHZ PG-SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21.5dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V
Frequency - Transition: 30GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Obsolete
Produkt ist nicht verfügbar
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IPD60R210CFD7ATMA1 Infineon-IPD60R210CFD7-DataSheet-v02_02-EN.pdf?fileId=5546d46262b31d2e01633a2feadc39b8
IPD60R210CFD7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N CH
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 4.9A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 240µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.57 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R210CFD7ATMA1 Infineon-IPD60R210CFD7-DataSheet-v02_02-EN.pdf?fileId=5546d46262b31d2e01633a2feadc39b8
IPD60R210CFD7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N CH
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 4.9A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 240µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V
auf Bestellung 2964 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.98 EUR
10+3.22 EUR
100+2.23 EUR
500+1.81 EUR
1000+1.67 EUR
Mindestbestellmenge: 4
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IPD60R1K0PFD7SAUMA1 Infineon-IPD60R1K0PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626eab8fbf016ed6256d5839ef
IPD60R1K0PFD7SAUMA1
Hersteller: Infineon Technologies
Description: CONSUMER PG-TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1A, 10V
Power Dissipation (Max): 26W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 400 V
Produkt ist nicht verfügbar
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IPD60R145CFD7ATMA1 Infineon-IPD60R145CFD7-DataSheet-v02_02-EN.pdf?fileId=5546d46262b31d2e01635ebca8052a8d
IPD60R145CFD7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N CH
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 6.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.74 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
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