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SIGC10T60EX1SA3 Infineon Technologies Infineon-SIGC10T60E-DS-v02_02-EN.pdf?fileId=db3a30433b47825b013b843ba8c832bb Description: IGBT 3 CHIP 600V 20A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
Supplier Device Package: Die
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Produkt ist nicht verfügbar
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SIGC10T60EX7SA1 Infineon Technologies Infineon-SIGC10T60E-DS-v02_02-EN.pdf?fileId=db3a30433b47825b013b843ba8c832bb Description: IGBT 3 CHIP 600V 20A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
Supplier Device Package: Die
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Produkt ist nicht verfügbar
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IKW50N65RH5XKSA1 IKW50N65RH5XKSA1 Infineon Technologies Infineon-IKW50N65RH5-DataSheet-v02_01-EN.pdf?fileId=5546d46275b79adb0175dc27f90f31a6 Description: IGBT TRENCH FS 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/180ns
Switching Energy: 230µJ (on), 180µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 305 W
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IKW50N65SS5XKSA1 IKW50N65SS5XKSA1 Infineon Technologies Infineon-IKW50N65SS5-DataSheet-v02_01-EN.pdf?fileId=5546d46275b79adb0175dc280a0e31a9 Description: IGBT TRENCH FS 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/140ns
Switching Energy: 320µJ (on), 550µJ (off)
Test Condition: 400V, 50A, 9Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 274 W
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TLE42642GHTMA1 TLE42642GHTMA1 Infineon Technologies Infineon-TLE4264-2G-DataSheet-v02_71-EN.pdf?fileId=5546d46258fc0bc101595f6960991f2d Description: IC REG LIN 5V 150MA PG-SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 70 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
Part Status: Active
PSRR: 68dB (100Hz)
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 4 mA
Qualification: AEC-Q100
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TLE42794GXUMA2 TLE42794GXUMA2 Infineon Technologies Infineon-TLE42794-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc101595f8e494d1f80 Description: IC REG LINEAR 5V 100MA 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 280 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
Part Status: Active
PSRR: 70dB (100Hz)
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 8 mA
Qualification: AEC-Q100
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TLE42794GXUMA2 TLE42794GXUMA2 Infineon Technologies Infineon-TLE42794-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc101595f8e494d1f80 Description: IC REG LINEAR 5V 100MA 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 280 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
Part Status: Active
PSRR: 70dB (100Hz)
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 8 mA
Qualification: AEC-Q100
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11+1.71 EUR
25+1.55 EUR
100+1.37 EUR
250+1.29 EUR
500+1.24 EUR
1000+1.2 EUR
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TC267D40F200SBBKXUMA1 TC267D40F200SBBKXUMA1 Infineon Technologies Infineon-TC26xBC-DS-v01_00-EN.pdf?fileId=5546d462694c98b40169538e06030445 Description: IC MCU 32BIT 2.5MB FLSH 292LFBGA
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IM231L6S1BAUMA1 Infineon Technologies Infineon-IM231-L6S1B_T2B-DataSheet-v02_01-EN.pdf?fileId=5546d462689a790c0169067334d10ef3 Description: CIPOS MICRO
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IM231L6S1BAUMA1 Infineon Technologies Infineon-IM231-L6S1B_T2B-DataSheet-v02_01-EN.pdf?fileId=5546d462689a790c0169067334d10ef3 Description: CIPOS MICRO
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IM231M6S1BAUMA1 Infineon Technologies Infineon-IM231-M6S1B_T2B-DataSheet-v02_01-EN.pdf?fileId=5546d462689a790c0169067346a60ef9 Description: CIPOS MICRO
Produkt ist nicht verfügbar
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IGCM10F60HAXKMA1 IGCM10F60HAXKMA1 Infineon Technologies IGCM10F60HA.pdf Description: IGBT 600V 10A 24PWRDIP MOD
Packaging: Bulk
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 10 A
Voltage: 600 V
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IRS26320JTRPBF Infineon Technologies IRS26320JPbF_Factsheet.pdf Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 12V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
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TLE82422LXUMA2 TLE82422LXUMA2 Infineon Technologies Infineon-TLE8242_2-DS-v01_00-en.pdf?fileId=db3a3043271faefd012743c4b3380fdd Description: IC CURRENT SOURCE 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Sensing Method: Low-Side
Mounting Type: Surface Mount
Function: Current Source
Voltage - Input: 5.5V ~ 42V
Operating Temperature: -40°C ~ 150°C
Supplier Device Package: PG-LQFP-64-4
Part Status: Active
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1+28.74 EUR
10+22.9 EUR
25+21.44 EUR
100+19.84 EUR
250+19.08 EUR
500+18.62 EUR
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BSP88E6327 BSP88E6327 Infineon Technologies BSP88.pdf Description: MOSFET N-CH 240V 350MA SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 350mA, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 108µA
Supplier Device Package: PG-SOT223-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 4.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 95 pF @ 25 V
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TT500N16KOFS01HPSA1 Infineon Technologies Description: DIODE BG-PB60-1
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IRFI4212H-117PXKMA1 IRFI4212H-117PXKMA1 Infineon Technologies irfi4212h-117p.pdf?fileId=5546d462533600a401535623fc841f7a Description: MOSFET 2N-CH 100V 11A TO220-5
Packaging: Tube
Package / Case: TO-220-5 Full Pack, Formed Leads
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 18W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 50V
Rds On (Max) @ Id, Vgs: 72.5mOhm @ 6.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-5 Full-Pak
Part Status: Active
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EVAL2EDL23I06PJTOBO1 EVAL2EDL23I06PJTOBO1 Infineon Technologies Infineon-2EDL23I06PJ_EVAL-ApplicationNotes-v01_00-EN.pdf?fileId=5546d46145f1f3a401461dcd1de41bd5 Description: EVAL BOARD FOR 2EDL23I06-PJ
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 2EDL23I06-PJ
Supplied Contents: Board(s)
Part Status: Active
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IPI80N04S3-06 IPI80N04S3-06 Infineon Technologies INFNS10782-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
auf Bestellung 1000 Stücke:
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IPI80N04S3-03 IPI80N04S3-03 Infineon Technologies INFNS10911-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL AUTOMOTIVE MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V
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IPI80N04S404AKSA1 IPI80N04S404AKSA1 Infineon Technologies Infineon-IPP_B_I80N04S4_04-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c71d4085dfa&ack=t Description: MOSFET N-CH 40V 80A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 80A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TO262-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 25 V
Qualification: AEC-Q101
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IPB80N04S2-H4 Infineon Technologies INFNS11807-1.pdf?t.download=true&u=5oefqw Description: IPB80N04 - 20V-40V N-CHANNEL AUT
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 148 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
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IPI80N04S3-04 Infineon Technologies INFNS10666-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Produkt ist nicht verfügbar
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BSC050N10NS5ATMA1 BSC050N10NS5ATMA1 Infineon Technologies Infineon-BSC050N10NS5-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0164366daea34f7d Description: MOSFET N-CH 100V 16A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 72µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 50 V
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BSC050N10NS5ATMA1 BSC050N10NS5ATMA1 Infineon Technologies Infineon-BSC050N10NS5-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0164366daea34f7d Description: MOSFET N-CH 100V 16A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 72µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 50 V
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IPA60R380C6 Infineon Technologies INFN-S-A0004583381-1.pdf?t.download=true&u=5oefqw Description: 600V COOLMOS POWER TRANSISTOR
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
Produkt ist nicht verfügbar
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BBY5102VH6327XTSA1 BBY5102VH6327XTSA1 Infineon Technologies bby51series.pdf Description: DIODE TUNING 2SC79
Packaging: Bulk
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 3.7pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C4
Supplier Device Package: PG-SC79-2-1
Part Status: Obsolete
Voltage - Peak Reverse (Max): 7 V
Capacitance Ratio: 2.2
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2420+0.2 EUR
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IRF6610TR1 IRF6610TR1 Infineon Technologies description Description: MOSFET N-CH 20V 15A DIRECTFET
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IPL60R060CFD7AUMA1 IPL60R060CFD7AUMA1 Infineon Technologies Infineon-IPL60R060CFD7-DS-v02_00-EN.pdf?fileId=5546d46262b31d2e01633ed634654cdf Description: MOSFET N CH
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 18A, 10V
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-VSON-4-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3193 pF @ 400 V
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3000+4.53 EUR
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IPL60R060CFD7AUMA1 IPL60R060CFD7AUMA1 Infineon Technologies Infineon-IPL60R060CFD7-DS-v02_00-EN.pdf?fileId=5546d46262b31d2e01633ed634654cdf Description: MOSFET N CH
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 18A, 10V
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-VSON-4-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3193 pF @ 400 V
auf Bestellung 4222 Stücke:
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10+7.22 EUR
100+5.32 EUR
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BFN 19 E6327 BFN 19 E6327 Infineon Technologies bfn19.pdf?folderId=db3a30431441fb5d011449af3ad90232&fileId=db3a30431441fb5d011449c1d62e0238 Description: TRANS PNP 300V 0.2A SOT-89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1 W
Produkt ist nicht verfügbar
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BSC091N03MSCGATMA1 BSC091N03MSCGATMA1 Infineon Technologies INFNS13697-1.pdf?t.download=true&u=5oefqw Description: POWER FIELD-EFFECT TRANSISTOR, 1
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
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BSC0904NSIATMA1 BSC0904NSIATMA1 Infineon Technologies BSC0904NSI_Rev+2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432f29829e012f3073397339ef Description: MOSFET N-CH 30V 20A/78A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
auf Bestellung 18382 Stücke:
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17+1.09 EUR
100+0.72 EUR
500+0.56 EUR
1000+0.5 EUR
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SPP08P06PXK SPP08P06PXK Infineon Technologies Infineon-SPP08P06PH-DS-v01_06-en.pdf?fileId=db3a304325afd6e001264b5840530c71 Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6.2A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
Produkt ist nicht verfügbar
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IKD15N60RC2ATMA1 IKD15N60RC2ATMA1 Infineon Technologies Infineon-IKD15N60RC2-DataSheet-v02_01-EN.pdf?fileId=5546d4627645f8770176522375194d26 Description: IGBT TRENCH FS 600V 28A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 129 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 15A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/374ns
Switching Energy: 570µJ (on), 350µJ (off)
Test Condition: 400V, 15A, 49Ohm, 15V
Gate Charge: 72 nC
Part Status: Active
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 115.4 W
Produkt ist nicht verfügbar
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IKD15N60RC2ATMA1 IKD15N60RC2ATMA1 Infineon Technologies Infineon-IKD15N60RC2-DataSheet-v02_01-EN.pdf?fileId=5546d4627645f8770176522375194d26 Description: IGBT TRENCH FS 600V 28A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 129 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 15A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/374ns
Switching Energy: 570µJ (on), 350µJ (off)
Test Condition: 400V, 15A, 49Ohm, 15V
Gate Charge: 72 nC
Part Status: Active
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 115.4 W
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500+0.84 EUR
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IKD10N60RC2ATMA1 IKD10N60RC2ATMA1 Infineon Technologies Infineon-IKD10N60RC2-DataSheet-v02_01-EN.pdf?fileId=5546d4627645f877017652235f064d23 Description: IGBT TRENCH FS 600V 18.8A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 104 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 10A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 14ns/250ns
Switching Energy: 320µJ (on), 170µJ (off)
Test Condition: 400V, 10A, 49Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 18.8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 79 W
auf Bestellung 2500 Stücke:
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2500+0.57 EUR
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IKD10N60RC2ATMA1 IKD10N60RC2ATMA1 Infineon Technologies Infineon-IKD10N60RC2-DataSheet-v02_01-EN.pdf?fileId=5546d4627645f877017652235f064d23 Description: IGBT TRENCH FS 600V 18.8A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 104 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 10A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 14ns/250ns
Switching Energy: 320µJ (on), 170µJ (off)
Test Condition: 400V, 10A, 49Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 18.8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 79 W
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9+2.13 EUR
14+1.34 EUR
100+0.89 EUR
500+0.7 EUR
1000+0.64 EUR
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TDA5221 TDA5221 Infineon Technologies INFNS07062-1.pdf?t.download=true&u=5oefqw Description: TDX5221 - WIRELESS CONTROL RECEI
Features: RSSI Equipped
Packaging: Bulk
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Sensitivity: -113dBm
Mounting Type: Surface Mount
Frequency: 300MHz ~ 340MHz
Modulation or Protocol: ASK, FSK
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 4.5V ~ 5.5V
Applications: RKE, Remote Control Systems
Current - Receiving: 6.4mA
Data Rate (Max): 100kbps
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-28
Part Status: Active
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IPD85P04P407ATMA1 IPD85P04P407ATMA1 Infineon Technologies Infineon-IPD85P04P4_07-DS-v01_00-en.pdf?fileId=db3a30432f69f146012f782666e92ddd Description: MOSFET P-CH 40V 85A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 85A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: PG-TO252-3-313
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6085 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPD85P04P407ATMA1 IPD85P04P407ATMA1 Infineon Technologies Infineon-IPD85P04P4_07-DS-v01_00-en.pdf?fileId=db3a30432f69f146012f782666e92ddd Description: MOSFET P-CH 40V 85A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 85A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: PG-TO252-3-313
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6085 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NLM0010XTSA1 NLM0010XTSA1 Infineon Technologies Infineon-Datasheet_NLM001x-DataSheet-v02_00-EN.pdf?fileId=5546d4626c1f3dc3016c8aec20e81011 Description: IC NFC-PWM LED W/OUT CLO
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Frequency: 13.56MHz
Type: RFID Transponder
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3V ~ 5.5V
Standards: ISO 15693, ISO 18000-3
Supplier Device Package: PG-SOT23-5-1
Part Status: Active
Produkt ist nicht verfügbar
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NLM0010XTSA1 NLM0010XTSA1 Infineon Technologies Infineon-Datasheet_NLM001x-DataSheet-v02_00-EN.pdf?fileId=5546d4626c1f3dc3016c8aec20e81011 Description: IC NFC-PWM LED W/OUT CLO
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Frequency: 13.56MHz
Type: RFID Transponder
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3V ~ 5.5V
Standards: ISO 15693, ISO 18000-3
Supplier Device Package: PG-SOT23-5-1
Part Status: Active
auf Bestellung 2997 Stücke:
Lieferzeit 10-14 Tag (e)
16+1.16 EUR
22+0.83 EUR
25+0.75 EUR
100+0.65 EUR
250+0.61 EUR
500+0.58 EUR
1000+0.56 EUR
Mindestbestellmenge: 16
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NLM0011XTSA1 NLM0011XTSA1 Infineon Technologies Infineon-Datasheet_NLM001x-DataSheet-v02_00-EN.pdf?fileId=5546d4626c1f3dc3016c8aec20e81011 Description: IC NFC-PWM LED W CLO
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Frequency: 13.56MHz
Type: RFID Transponder
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3V ~ 5.5V
Standards: ISO 15693, ISO 18000-3
Supplier Device Package: PG-SOT23-5-1
Part Status: Active
Produkt ist nicht verfügbar
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NLM0011XTSA1 NLM0011XTSA1 Infineon Technologies Infineon-Datasheet_NLM001x-DataSheet-v02_00-EN.pdf?fileId=5546d4626c1f3dc3016c8aec20e81011 Description: IC NFC-PWM LED W CLO
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Frequency: 13.56MHz
Type: RFID Transponder
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3V ~ 5.5V
Standards: ISO 15693, ISO 18000-3
Supplier Device Package: PG-SOT23-5-1
Part Status: Active
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13+1.41 EUR
15+1.25 EUR
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100+0.98 EUR
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XMC1302Q040X0200ABXUMA1 XMC1302Q040X0200ABXUMA1 Infineon Technologies Description: IC MCU 32BIT 200KB FLASH 40VQFN
Packaging: Cut Tape (CT)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-40-13
Part Status: Active
Number of I/O: 27
DigiKey Programmable: Not Verified
auf Bestellung 24844 Stücke:
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10+3.47 EUR
25+3.18 EUR
100+2.86 EUR
250+2.71 EUR
500+2.62 EUR
1000+2.54 EUR
2500+2.46 EUR
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CY8C4246LTI-DM405 CY8C4246LTI-DM405 Infineon Technologies Infineon-PSoC_4_PSoC_4200M_Family_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee45b436afc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integrati Description: IC MCU 32BIT 64KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartSense, WDT
Supplier Device Package: 68-QFN (8x8)
Part Status: Active
Number of I/O: 55
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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PEB2036NV4.1 Infineon Technologies Description: CFA (CMOS FRAME ALIGNER)
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PEB2036NV4.1CFA Infineon Technologies Description: CFA (CMOS FRAME ALIGNER)
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PEB20324HV2.2 PEB20324HV2.2 Infineon Technologies Description: NETWORK INTERFACE CONTROLLER
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PEB2035PV4.1-ACFA PEB2035PV4.1-ACFA Infineon Technologies Description: ADVANCED CMOS FRAME ALIGNER ACFA
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
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13+41.08 EUR
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PEB20321HV2.2 Infineon Technologies Description: NETWORK INTERFACE CONTROLLER
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PEB20324HV2.2-M128X Infineon Technologies Description: NETWORK INTERFACE CONTROLLER
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CY7C1320BV18-200BZC CY7C1320BV18-200BZC Infineon Technologies CY7C1316,18,20,1916BV18.pdf Description: IC SRAM 18MBIT PARALLEL 165FBGA
auf Bestellung 523 Stücke:
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10+51.3 EUR
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BSM150GB170DN2E3256HDLA1 Infineon Technologies INFNS09017-1.pdf?t.download=true&u=5oefqw Description: IGBT MOD 1700V 300A 1250W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 300 µA
Input Capacitance (Cies) @ Vce: 10 nF @ 25 V
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2+191.99 EUR
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BSM150GB170DLCE3256HDLA1 Infineon Technologies Description: IGBT MODULE 1700V 300A 1250W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 150A
NTC Thermistor: No
Part Status: Obsolete
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 300 µA
Input Capacitance (Cies) @ Vce: 10 nF @ 25 V
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3+163.18 EUR
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BSM150GB170DLCHOSA1 Infineon Technologies Description: IGBT MOD 1700V 300A 1250W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 300 µA
Input Capacitance (Cies) @ Vce: 10 nF @ 25 V
auf Bestellung 435 Stücke:
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2+251.47 EUR
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BSM150GB170DLCHOSA1 Infineon Technologies Description: IGBT MOD 1700V 300A 1250W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 300 µA
Input Capacitance (Cies) @ Vce: 10 nF @ 25 V
Produkt ist nicht verfügbar
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BSM300GA170DN2SE325HOSA1 Infineon Technologies Description: IGBT MODULE
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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IGT40R070D1E8220ATMA1 IGT40R070D1E8220ATMA1 Infineon Technologies Infineon-IGT40R070D1%20E8220-DataSheet-v02_00-EN.pdf?fileId=5546d4626afcd350016b269dd8f34ec4 Description: GAN N-CH 400V 31A HSOF-8-3
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-HSOF-8-3
Part Status: Obsolete
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 382 pF @ 320 V
Produkt ist nicht verfügbar
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SIGC10T60EX1SA3 Infineon-SIGC10T60E-DS-v02_02-EN.pdf?fileId=db3a30433b47825b013b843ba8c832bb
Hersteller: Infineon Technologies
Description: IGBT 3 CHIP 600V 20A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
Supplier Device Package: Die
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Produkt ist nicht verfügbar
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SIGC10T60EX7SA1 Infineon-SIGC10T60E-DS-v02_02-EN.pdf?fileId=db3a30433b47825b013b843ba8c832bb
Hersteller: Infineon Technologies
Description: IGBT 3 CHIP 600V 20A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
Supplier Device Package: Die
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Produkt ist nicht verfügbar
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IKW50N65RH5XKSA1 Infineon-IKW50N65RH5-DataSheet-v02_01-EN.pdf?fileId=5546d46275b79adb0175dc27f90f31a6
IKW50N65RH5XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/180ns
Switching Energy: 230µJ (on), 180µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 305 W
auf Bestellung 280 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.98 EUR
30+6.33 EUR
120+5.31 EUR
Mindestbestellmenge: 2
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IKW50N65SS5XKSA1 Infineon-IKW50N65SS5-DataSheet-v02_01-EN.pdf?fileId=5546d46275b79adb0175dc280a0e31a9
IKW50N65SS5XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/140ns
Switching Energy: 320µJ (on), 550µJ (off)
Test Condition: 400V, 50A, 9Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 274 W
auf Bestellung 116 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+14.82 EUR
30+8.75 EUR
Mindestbestellmenge: 2
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TLE42642GHTMA1 Infineon-TLE4264-2G-DataSheet-v02_71-EN.pdf?fileId=5546d46258fc0bc101595f6960991f2d
TLE42642GHTMA1
Hersteller: Infineon Technologies
Description: IC REG LIN 5V 150MA PG-SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 70 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
Part Status: Active
PSRR: 68dB (100Hz)
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 4 mA
Qualification: AEC-Q100
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+1.21 EUR
Mindestbestellmenge: 4000
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TLE42794GXUMA2 Infineon-TLE42794-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc101595f8e494d1f80
TLE42794GXUMA2
Hersteller: Infineon Technologies
Description: IC REG LINEAR 5V 100MA 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 280 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
Part Status: Active
PSRR: 70dB (100Hz)
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 8 mA
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE42794GXUMA2 Infineon-TLE42794-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc101595f8e494d1f80
TLE42794GXUMA2
Hersteller: Infineon Technologies
Description: IC REG LINEAR 5V 100MA 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 280 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
Part Status: Active
PSRR: 70dB (100Hz)
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 8 mA
Qualification: AEC-Q100
auf Bestellung 2272 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.34 EUR
11+1.71 EUR
25+1.55 EUR
100+1.37 EUR
250+1.29 EUR
500+1.24 EUR
1000+1.2 EUR
Mindestbestellmenge: 8
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TC267D40F200SBBKXUMA1 Infineon-TC26xBC-DS-v01_00-EN.pdf?fileId=5546d462694c98b40169538e06030445
TC267D40F200SBBKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 2.5MB FLSH 292LFBGA
Produkt ist nicht verfügbar
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IM231L6S1BAUMA1 Infineon-IM231-L6S1B_T2B-DataSheet-v02_01-EN.pdf?fileId=5546d462689a790c0169067334d10ef3
Hersteller: Infineon Technologies
Description: CIPOS MICRO
Produkt ist nicht verfügbar
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IM231L6S1BAUMA1 Infineon-IM231-L6S1B_T2B-DataSheet-v02_01-EN.pdf?fileId=5546d462689a790c0169067334d10ef3
Hersteller: Infineon Technologies
Description: CIPOS MICRO
Produkt ist nicht verfügbar
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IM231M6S1BAUMA1 Infineon-IM231-M6S1B_T2B-DataSheet-v02_01-EN.pdf?fileId=5546d462689a790c0169067346a60ef9
Hersteller: Infineon Technologies
Description: CIPOS MICRO
Produkt ist nicht verfügbar
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IGCM10F60HAXKMA1 IGCM10F60HA.pdf
IGCM10F60HAXKMA1
Hersteller: Infineon Technologies
Description: IGBT 600V 10A 24PWRDIP MOD
Packaging: Bulk
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 10 A
Voltage: 600 V
auf Bestellung 182 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
45+10.89 EUR
Mindestbestellmenge: 45
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IRS26320JTRPBF IRS26320JPbF_Factsheet.pdf
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 12V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TLE82422LXUMA2 Infineon-TLE8242_2-DS-v01_00-en.pdf?fileId=db3a3043271faefd012743c4b3380fdd
TLE82422LXUMA2
Hersteller: Infineon Technologies
Description: IC CURRENT SOURCE 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Sensing Method: Low-Side
Mounting Type: Surface Mount
Function: Current Source
Voltage - Input: 5.5V ~ 42V
Operating Temperature: -40°C ~ 150°C
Supplier Device Package: PG-LQFP-64-4
Part Status: Active
auf Bestellung 1919 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+28.74 EUR
10+22.9 EUR
25+21.44 EUR
100+19.84 EUR
250+19.08 EUR
500+18.62 EUR
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BSP88E6327 BSP88.pdf
BSP88E6327
Hersteller: Infineon Technologies
Description: MOSFET N-CH 240V 350MA SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 350mA, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 108µA
Supplier Device Package: PG-SOT223-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 4.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 95 pF @ 25 V
auf Bestellung 194558 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1484+0.34 EUR
Mindestbestellmenge: 1484
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TT500N16KOFS01HPSA1
Hersteller: Infineon Technologies
Description: DIODE BG-PB60-1
Produkt ist nicht verfügbar
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IRFI4212H-117PXKMA1 irfi4212h-117p.pdf?fileId=5546d462533600a401535623fc841f7a
IRFI4212H-117PXKMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 100V 11A TO220-5
Packaging: Tube
Package / Case: TO-220-5 Full Pack, Formed Leads
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 18W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 50V
Rds On (Max) @ Id, Vgs: 72.5mOhm @ 6.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-5 Full-Pak
Part Status: Active
auf Bestellung 517 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.27 EUR
50+1.42 EUR
100+1.41 EUR
500+1.37 EUR
Mindestbestellmenge: 8
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EVAL2EDL23I06PJTOBO1 Infineon-2EDL23I06PJ_EVAL-ApplicationNotes-v01_00-EN.pdf?fileId=5546d46145f1f3a401461dcd1de41bd5
EVAL2EDL23I06PJTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR 2EDL23I06-PJ
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 2EDL23I06-PJ
Supplied Contents: Board(s)
Part Status: Active
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+150.92 EUR
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IPI80N04S3-06 INFNS10782-1.pdf?t.download=true&u=5oefqw
IPI80N04S3-06
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
670+0.73 EUR
Mindestbestellmenge: 670
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IPI80N04S3-03 INFNS10911-1.pdf?t.download=true&u=5oefqw
IPI80N04S3-03
Hersteller: Infineon Technologies
Description: N-CHANNEL AUTOMOTIVE MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
248+2.02 EUR
Mindestbestellmenge: 248
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IPI80N04S404AKSA1 Infineon-IPP_B_I80N04S4_04-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c71d4085dfa&ack=t
IPI80N04S404AKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 80A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 80A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TO262-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 285682 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
268+1.82 EUR
Mindestbestellmenge: 268
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IPB80N04S2-H4 INFNS11807-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IPB80N04 - 20V-40V N-CHANNEL AUT
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 148 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
Produkt ist nicht verfügbar
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IPI80N04S3-04 INFNS10666-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Produkt ist nicht verfügbar
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BSC050N10NS5ATMA1 Infineon-BSC050N10NS5-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0164366daea34f7d
BSC050N10NS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 16A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 72µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 50 V
Produkt ist nicht verfügbar
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BSC050N10NS5ATMA1 Infineon-BSC050N10NS5-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0164366daea34f7d
BSC050N10NS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 16A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 72µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 50 V
auf Bestellung 4767 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+2.96 EUR
11+1.7 EUR
100+1.41 EUR
Mindestbestellmenge: 6
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IPA60R380C6 INFN-S-A0004583381-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: 600V COOLMOS POWER TRANSISTOR
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
Produkt ist nicht verfügbar
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BBY5102VH6327XTSA1 bby51series.pdf
BBY5102VH6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE TUNING 2SC79
Packaging: Bulk
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 3.7pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C4
Supplier Device Package: PG-SC79-2-1
Part Status: Obsolete
Voltage - Peak Reverse (Max): 7 V
Capacitance Ratio: 2.2
auf Bestellung 402000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2420+0.2 EUR
Mindestbestellmenge: 2420
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IRF6610TR1 description
IRF6610TR1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 15A DIRECTFET
Produkt ist nicht verfügbar
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IPL60R060CFD7AUMA1 Infineon-IPL60R060CFD7-DS-v02_00-EN.pdf?fileId=5546d46262b31d2e01633ed634654cdf
IPL60R060CFD7AUMA1
Hersteller: Infineon Technologies
Description: MOSFET N CH
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 18A, 10V
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-VSON-4-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3193 pF @ 400 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+4.53 EUR
Mindestbestellmenge: 3000
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IPL60R060CFD7AUMA1 Infineon-IPL60R060CFD7-DS-v02_00-EN.pdf?fileId=5546d46262b31d2e01633ed634654cdf
IPL60R060CFD7AUMA1
Hersteller: Infineon Technologies
Description: MOSFET N CH
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 18A, 10V
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-VSON-4-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3193 pF @ 400 V
auf Bestellung 4222 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.17 EUR
10+7.22 EUR
100+5.32 EUR
Mindestbestellmenge: 2
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BFN 19 E6327 bfn19.pdf?folderId=db3a30431441fb5d011449af3ad90232&fileId=db3a30431441fb5d011449c1d62e0238
BFN 19 E6327
Hersteller: Infineon Technologies
Description: TRANS PNP 300V 0.2A SOT-89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1 W
Produkt ist nicht verfügbar
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BSC091N03MSCGATMA1 INFNS13697-1.pdf?t.download=true&u=5oefqw
BSC091N03MSCGATMA1
Hersteller: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR, 1
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
auf Bestellung 39335 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1094+0.45 EUR
Mindestbestellmenge: 1094
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BSC0904NSIATMA1 BSC0904NSI_Rev+2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432f29829e012f3073397339ef
BSC0904NSIATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 20A/78A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
auf Bestellung 18382 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.74 EUR
17+1.09 EUR
100+0.72 EUR
500+0.56 EUR
1000+0.5 EUR
2000+0.46 EUR
Mindestbestellmenge: 11
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SPP08P06PXK Infineon-SPP08P06PH-DS-v01_06-en.pdf?fileId=db3a304325afd6e001264b5840530c71
SPP08P06PXK
Hersteller: Infineon Technologies
Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6.2A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
Produkt ist nicht verfügbar
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IKD15N60RC2ATMA1 Infineon-IKD15N60RC2-DataSheet-v02_01-EN.pdf?fileId=5546d4627645f8770176522375194d26
IKD15N60RC2ATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 28A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 129 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 15A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/374ns
Switching Energy: 570µJ (on), 350µJ (off)
Test Condition: 400V, 15A, 49Ohm, 15V
Gate Charge: 72 nC
Part Status: Active
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 115.4 W
Produkt ist nicht verfügbar
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IKD15N60RC2ATMA1 Infineon-IKD15N60RC2-DataSheet-v02_01-EN.pdf?fileId=5546d4627645f8770176522375194d26
IKD15N60RC2ATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 28A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 129 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 15A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/374ns
Switching Energy: 570µJ (on), 350µJ (off)
Test Condition: 400V, 15A, 49Ohm, 15V
Gate Charge: 72 nC
Part Status: Active
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 115.4 W
auf Bestellung 847 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.52 EUR
11+1.6 EUR
100+1.07 EUR
500+0.84 EUR
Mindestbestellmenge: 7
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IKD10N60RC2ATMA1 Infineon-IKD10N60RC2-DataSheet-v02_01-EN.pdf?fileId=5546d4627645f877017652235f064d23
IKD10N60RC2ATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 18.8A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 104 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 10A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 14ns/250ns
Switching Energy: 320µJ (on), 170µJ (off)
Test Condition: 400V, 10A, 49Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 18.8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 79 W
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.57 EUR
Mindestbestellmenge: 2500
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IKD10N60RC2ATMA1 Infineon-IKD10N60RC2-DataSheet-v02_01-EN.pdf?fileId=5546d4627645f877017652235f064d23
IKD10N60RC2ATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 18.8A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 104 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 10A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 14ns/250ns
Switching Energy: 320µJ (on), 170µJ (off)
Test Condition: 400V, 10A, 49Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 18.8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 79 W
auf Bestellung 3239 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.13 EUR
14+1.34 EUR
100+0.89 EUR
500+0.7 EUR
1000+0.64 EUR
Mindestbestellmenge: 9
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TDA5221 INFNS07062-1.pdf?t.download=true&u=5oefqw
TDA5221
Hersteller: Infineon Technologies
Description: TDX5221 - WIRELESS CONTROL RECEI
Features: RSSI Equipped
Packaging: Bulk
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Sensitivity: -113dBm
Mounting Type: Surface Mount
Frequency: 300MHz ~ 340MHz
Modulation or Protocol: ASK, FSK
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 4.5V ~ 5.5V
Applications: RKE, Remote Control Systems
Current - Receiving: 6.4mA
Data Rate (Max): 100kbps
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-28
Part Status: Active
auf Bestellung 3223 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
224+2.15 EUR
Mindestbestellmenge: 224
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IPD85P04P407ATMA1 Infineon-IPD85P04P4_07-DS-v01_00-en.pdf?fileId=db3a30432f69f146012f782666e92ddd
IPD85P04P407ATMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 85A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 85A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: PG-TO252-3-313
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6085 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPD85P04P407ATMA1 Infineon-IPD85P04P4_07-DS-v01_00-en.pdf?fileId=db3a30432f69f146012f782666e92ddd
IPD85P04P407ATMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 85A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 85A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: PG-TO252-3-313
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6085 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NLM0010XTSA1 Infineon-Datasheet_NLM001x-DataSheet-v02_00-EN.pdf?fileId=5546d4626c1f3dc3016c8aec20e81011
NLM0010XTSA1
Hersteller: Infineon Technologies
Description: IC NFC-PWM LED W/OUT CLO
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Frequency: 13.56MHz
Type: RFID Transponder
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3V ~ 5.5V
Standards: ISO 15693, ISO 18000-3
Supplier Device Package: PG-SOT23-5-1
Part Status: Active
Produkt ist nicht verfügbar
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NLM0010XTSA1 Infineon-Datasheet_NLM001x-DataSheet-v02_00-EN.pdf?fileId=5546d4626c1f3dc3016c8aec20e81011
NLM0010XTSA1
Hersteller: Infineon Technologies
Description: IC NFC-PWM LED W/OUT CLO
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Frequency: 13.56MHz
Type: RFID Transponder
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3V ~ 5.5V
Standards: ISO 15693, ISO 18000-3
Supplier Device Package: PG-SOT23-5-1
Part Status: Active
auf Bestellung 2997 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.16 EUR
22+0.83 EUR
25+0.75 EUR
100+0.65 EUR
250+0.61 EUR
500+0.58 EUR
1000+0.56 EUR
Mindestbestellmenge: 16
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NLM0011XTSA1 Infineon-Datasheet_NLM001x-DataSheet-v02_00-EN.pdf?fileId=5546d4626c1f3dc3016c8aec20e81011
NLM0011XTSA1
Hersteller: Infineon Technologies
Description: IC NFC-PWM LED W CLO
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Frequency: 13.56MHz
Type: RFID Transponder
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3V ~ 5.5V
Standards: ISO 15693, ISO 18000-3
Supplier Device Package: PG-SOT23-5-1
Part Status: Active
Produkt ist nicht verfügbar
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NLM0011XTSA1 Infineon-Datasheet_NLM001x-DataSheet-v02_00-EN.pdf?fileId=5546d4626c1f3dc3016c8aec20e81011
NLM0011XTSA1
Hersteller: Infineon Technologies
Description: IC NFC-PWM LED W CLO
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Frequency: 13.56MHz
Type: RFID Transponder
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3V ~ 5.5V
Standards: ISO 15693, ISO 18000-3
Supplier Device Package: PG-SOT23-5-1
Part Status: Active
auf Bestellung 409 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.41 EUR
15+1.25 EUR
25+1.19 EUR
100+0.98 EUR
250+0.91 EUR
Mindestbestellmenge: 13
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XMC1302Q040X0200ABXUMA1
XMC1302Q040X0200ABXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 200KB FLASH 40VQFN
Packaging: Cut Tape (CT)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-40-13
Part Status: Active
Number of I/O: 27
DigiKey Programmable: Not Verified
auf Bestellung 24844 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.63 EUR
10+3.47 EUR
25+3.18 EUR
100+2.86 EUR
250+2.71 EUR
500+2.62 EUR
1000+2.54 EUR
2500+2.46 EUR
Mindestbestellmenge: 4
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CY8C4246LTI-DM405 Infineon-PSoC_4_PSoC_4200M_Family_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee45b436afc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integrati
CY8C4246LTI-DM405
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartSense, WDT
Supplier Device Package: 68-QFN (8x8)
Part Status: Active
Number of I/O: 55
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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PEB2036NV4.1
Hersteller: Infineon Technologies
Description: CFA (CMOS FRAME ALIGNER)
auf Bestellung 11000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
49+10.15 EUR
Mindestbestellmenge: 49
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PEB2036NV4.1CFA
Hersteller: Infineon Technologies
Description: CFA (CMOS FRAME ALIGNER)
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
49+10.15 EUR
Mindestbestellmenge: 49
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PEB20324HV2.2
PEB20324HV2.2
Hersteller: Infineon Technologies
Description: NETWORK INTERFACE CONTROLLER
auf Bestellung 136 Stücke:
Lieferzeit 10-14 Tag (e)
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PEB2035PV4.1-ACFA
PEB2035PV4.1-ACFA
Hersteller: Infineon Technologies
Description: ADVANCED CMOS FRAME ALIGNER ACFA
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 6146 Stücke:
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Anzahl Preis
13+41.08 EUR
Mindestbestellmenge: 13
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PEB20321HV2.2
Hersteller: Infineon Technologies
Description: NETWORK INTERFACE CONTROLLER
auf Bestellung 100 Stücke:
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PEB20324HV2.2-M128X
Hersteller: Infineon Technologies
Description: NETWORK INTERFACE CONTROLLER
auf Bestellung 144 Stücke:
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CY7C1320BV18-200BZC CY7C1316,18,20,1916BV18.pdf
CY7C1320BV18-200BZC
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 165FBGA
auf Bestellung 523 Stücke:
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Anzahl Preis
10+51.3 EUR
Mindestbestellmenge: 10
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BSM150GB170DN2E3256HDLA1 INFNS09017-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 300A 1250W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 300 µA
Input Capacitance (Cies) @ Vce: 10 nF @ 25 V
auf Bestellung 14 Stücke:
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Anzahl Preis
2+191.99 EUR
Mindestbestellmenge: 2
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BSM150GB170DLCE3256HDLA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1700V 300A 1250W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 150A
NTC Thermistor: No
Part Status: Obsolete
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 300 µA
Input Capacitance (Cies) @ Vce: 10 nF @ 25 V
auf Bestellung 47 Stücke:
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Anzahl Preis
3+163.18 EUR
Mindestbestellmenge: 3
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BSM150GB170DLCHOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 300A 1250W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 300 µA
Input Capacitance (Cies) @ Vce: 10 nF @ 25 V
auf Bestellung 435 Stücke:
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Anzahl Preis
2+251.47 EUR
Mindestbestellmenge: 2
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BSM150GB170DLCHOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 300A 1250W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 300 µA
Input Capacitance (Cies) @ Vce: 10 nF @ 25 V
Produkt ist nicht verfügbar
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BSM300GA170DN2SE325HOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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IGT40R070D1E8220ATMA1 Infineon-IGT40R070D1%20E8220-DataSheet-v02_00-EN.pdf?fileId=5546d4626afcd350016b269dd8f34ec4
IGT40R070D1E8220ATMA1
Hersteller: Infineon Technologies
Description: GAN N-CH 400V 31A HSOF-8-3
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-HSOF-8-3
Part Status: Obsolete
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 382 pF @ 320 V
Produkt ist nicht verfügbar
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