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XC822MT1FRIAAFXUMA1 XC822MT1FRIAAFXUMA1 Infineon Technologies Infineon-XC822_XC824-DS-v01_02-en.pdf?fileId=db3a3043271faefd01273d68a3d968df Description: IC MCU 8BIT 4KB FLASH 16TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 4x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.5V ~ 5.5V
Connectivity: I2C, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, LED, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-16-1
Part Status: Last Time Buy
Number of I/O: 13
DigiKey Programmable: Not Verified
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SAF-XC822T-0FRIAA SAF-XC822T-0FRIAA Infineon Technologies INFNS19723-1.pdf?t.download=true&u=5oefqw Description: XC800 I-FAMILY MICROCONTROLLER ,
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 2KB (2K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 4x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.5V ~ 5.5V
Connectivity: I2C, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, LED, POR, PWM, Touch-Sense, WDT
Supplier Device Package: PG-TSSOP-16
Part Status: Active
Number of I/O: 13
DigiKey Programmable: Not Verified
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SAF-XC822T-1FRIAA SAF-XC822T-1FRIAA Infineon Technologies INFNS19723-1.pdf?t.download=true&u=5oefqw Description: XC800 I-FAMILY MICROCONTROLLER ,
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 4x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.5V ~ 5.5V
Connectivity: I2C, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, LED, POR, PWM, Touch-Sense, WDT
Supplier Device Package: PG-TSSOP-16
Part Status: Active
Number of I/O: 13
DigiKey Programmable: Not Verified
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PEB20571FV2.3 Infineon Technologies Description: DELIC-PB DSP EMBEDDED LINE CONT
Packaging: Bulk
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SIGC12T60NCX7SA1 Infineon Technologies Description: IGBT 3 CHIP 600V WAFER
Current - Collector Pulsed (Icm): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 10 A
Test Condition: 300V, 10A, 27Ohm, 15V
Td (on/off) @ 25°C: 21ns/110ns
IGBT Type: NPT
Supplier Device Package: Die
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
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IM828XCCXKMA1 IM828XCCXKMA1 Infineon Technologies Infineon-IM828-XCC-DataSheet-v02_00-EN.pdf?fileId=5546d4627448fb2b0174583d4d6d430c Description: MOSFET IPM 1.2KV 35A 24-PWRDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.094", 27.80mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase Inverter
Voltage - Isolation: 2500Vrms
Part Status: Active
Current: 35 A
Voltage: 1.2 kV
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IFX2931GV33XUMA1 IFX2931GV33XUMA1 Infineon Technologies IFX2931.pdf Description: IC REG LINEAR 3.3V 100MA 8DSO
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
PSRR: 80dB (120Hz)
Voltage Dropout (Max): 1.1V @ 100mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
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TLE4299GV33XUMA1 TLE4299GV33XUMA1 Infineon Technologies TLE4299%28GV%2CGMV%2933.pdf Description: IC REG LINEAR 3.3V 150MA 8DSO-3
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 105 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8-3
Voltage - Output (Min/Fixed): 3.3V
Control Features: Reset
Grade: Automotive
PSRR: 66dB (100Hz)
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 2 mA
Qualification: AEC-Q100
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TLE8457BSJXUMA1 TLE8457BSJXUMA1 Infineon Technologies Infineon-TLE8457-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a3d3694ae6179 Description: IC TRANSCEIVER 1/1 DSO-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 3.3V
Number of Drivers/Receivers: 1/1
Protocol: LINbus
Supplier Device Package: PG-DSO-8
Receiver Hysteresis: 175 mV
Grade: Automotive
Qualification: AEC-Q100
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TLE8457BSJXUMA1 TLE8457BSJXUMA1 Infineon Technologies Infineon-TLE8457-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a3d3694ae6179 Description: IC TRANSCEIVER 1/1 DSO-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 3.3V
Number of Drivers/Receivers: 1/1
Protocol: LINbus
Supplier Device Package: PG-DSO-8
Receiver Hysteresis: 175 mV
Grade: Automotive
Qualification: AEC-Q100
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TLS208D1EJV33XUMA1 TLS208D1EJV33XUMA1 Infineon Technologies INFN-S-A0001299229-1.pdf?t.download=true&u=5oefqw Description: IC REG LINEAR 3.3V 800MA 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 170 µA
Voltage - Input (Max): 18V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable, Reset
Grade: Automotive
Part Status: Active
PSRR: 62dB (10kHz)
Voltage Dropout (Max): 1V @ 800mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 250 µA
Qualification: AEC-Q100
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100+2.04 EUR
250+1.92 EUR
500+1.85 EUR
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IDK08G120C5XTMA1 IDK08G120C5XTMA1 Infineon Technologies Infineon-IDK08G120C5-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e3bf0d8a10f3e Description: DIODE SIC 1.2KV 22.8A PGTO26321
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 365pF @ 1V, 1MHz
Current - Average Rectified (Io): 22.8A
Supplier Device Package: PG-TO263-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
Reverse Recovery Time (trr): 0 ns
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TDB6HK135N16LOFHOSA1 Infineon Technologies Description: SCR MODULE VDRM 1600V 70A
Packaging: Bulk
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TDB6HK135N16LOFHOSA1 Infineon Technologies Description: SCR MODULE VDRM 1600V 70A
Packaging: Tray
Produkt ist nicht verfügbar
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SAK-XC2238N-24F40LAA SAK-XC2238N-24F40LAA Infineon Technologies INFNS15642-1.pdf?t.download=true&u=5oefqw Description: 16-BIT C166 MMC - XC2200 FAMILY
DigiKey Programmable: Not Verified
Number of I/O: 38
Part Status: Active
Supplier Device Package: PG-LQFP-64-6
Peripherals: I²S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16/32-Bit
Data Converters: A/D 9x10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 26K x 8
Program Memory Size: 192KB (192K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP Exposed Pad
Packaging: Bulk
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SAK-XC2238N-40F80LAA SAK-XC2238N-40F80LAA Infineon Technologies INFNS15642-1.pdf?t.download=true&u=5oefqw Description: 16-BIT C166 MMC - XC2200 FAMILY
DigiKey Programmable: Not Verified
Number of I/O: 38
Part Status: Active
Supplier Device Package: PG-LQFP-64-6
Peripherals: I²S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16/32-Bit
Data Converters: A/D 9x10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 42K x 8
Program Memory Size: 320KB (320K x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP Exposed Pad
Packaging: Bulk
Produkt ist nicht verfügbar
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IRGC4066B Infineon Technologies Short_Form_Cat_2016.pdf Description: IGBT CHIP
Produkt ist nicht verfügbar
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AIGB30N65H5ATMA1 AIGB30N65H5ATMA1 Infineon Technologies Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4 Description: IGBT NPT 650V 30A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Produkt ist nicht verfügbar
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IRF7459TRPBF IRF7459TRPBF Infineon Technologies IRF7459PbF.pdf Description: MOSFET N-CH 20V 12A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BGA715L7E6327XTSA1 BGA715L7E6327XTSA1 Infineon Technologies BGA715L7.pdf Description: IC RF AMP GPS 1575MHZ TSLP7-1
Packaging: Bulk
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1575MHz
RF Type: GPS
Voltage - Supply: 1.5V ~ 3.3V
Gain: 20dB
Current - Supply: 3.3mA
Noise Figure: 0.75dB
P1dB: -15.5dBm
Test Frequency: 1.575GHz
Supplier Device Package: PG-TSLP-7-1
Part Status: Obsolete
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2EDF7275KXUMA2 2EDF7275KXUMA2 Infineon Technologies Infineon-2EDF7275K-DataSheet-v02_08-EN.pdf?fileId=5546d462636cc8fb0163b0900069305a Description: IC GATE DRVR HALF-BRIDGE 13TFLGA
Packaging: Tape & Reel (TR)
Package / Case: 13-TFLGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TFLGA-13-1
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
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2EDF7275KXUMA2 2EDF7275KXUMA2 Infineon Technologies Infineon-2EDF7275K-DataSheet-v02_08-EN.pdf?fileId=5546d462636cc8fb0163b0900069305a Description: IC GATE DRVR HALF-BRIDGE 13TFLGA
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 4A, 8A
Logic Voltage - VIL, VIH: -, 1.65V
Gate Type: MOSFET (N-Channel, P-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Supplier Device Package: PG-TFLGA-13-1
Input Type: Non-Inverting
Voltage - Supply: 20V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 13-TFLGA
Packaging: Cut Tape (CT)
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100+2.02 EUR
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1000+1.78 EUR
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BSC146N10LS5ATMA1 BSC146N10LS5ATMA1 Infineon Technologies Infineon-BSC146N10LS5-DataSheet-v02_02-EN.pdf?fileId=5546d4626b2d8e69016b4c4f80f313ea Description: MOSFET N-CH 100V 44A TDSON-8-6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 22A, 10V
Power Dissipation (Max): 2.5W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 23µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
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IRFSL3107PBF IRFSL3107PBF Infineon Technologies irfs3107pbf.pdf?fileId=5546d462533600a4015356365a922154 Description: MOSFET N-CH 75V 195A TO262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 140A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9370 pF @ 50 V
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ISP75DP06LMXTSA1 ISP75DP06LMXTSA1 Infineon Technologies Infineon-ISP75DP06LM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a0730ea4a739d Description: MOSFET P-CH 60V 1.1A SOT223-4
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-SOT223-4
Vgs(th) (Max) @ Id: 2V @ 77µA
Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 1.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
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IFX9202EDXUMA1 IFX9202EDXUMA1 Infineon Technologies Infineon-IFX9202ED-DS-v01_00-EN.pdf?fileId=5546d4625d5945ed015deaa103010108 Description: IC HALF BRIDGE DRIVER DSO36-72
Qualification: AEC-Q100
Grade: Automotive
Load Type: Inductive
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Supplier Device Package: PG-DSO-36-72
Voltage - Load: 5V ~ 36V
Applications: DC Motors, General Purpose
Rds On (Typ): 100mOhm LS + HS
Voltage - Supply: 2.9V ~ 5.5V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 125°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: 36-BFSOP (0.295", 7.50mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
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IFX9202EDXUMA1 IFX9202EDXUMA1 Infineon Technologies Infineon-IFX9202ED-DS-v01_00-EN.pdf?fileId=5546d4625d5945ed015deaa103010108 Description: IC HALF BRIDGE DRIVER DSO36-72
Packaging: Cut Tape (CT)
Package / Case: 36-BFSOP (0.295", 7.50mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.9V ~ 5.5V
Rds On (Typ): 100mOhm LS + HS
Applications: DC Motors, General Purpose
Voltage - Load: 5V ~ 36V
Supplier Device Package: PG-DSO-36-72
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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FS450R12OE4BOSA1 FS450R12OE4BOSA1 Infineon Technologies Infineon-FS450R12OE4-DS-v03_02-en_de.pdf?fileId=db3a304334c41e910134d756add742c1 Description: IGBT MOD 1200V 660A 2250W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 660 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2250 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
1+636.29 EUR
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FS300R12OE4BOSA1 FS300R12OE4BOSA1 Infineon Technologies Infineon-FS300R12OE4-DS-v03_01-en_de.pdf?fileId=db3a304335f1f4b601363fdf1629503d Description: IGBT MOD 1200V 460A 1650W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 460 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1650 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
Produkt ist nicht verfügbar
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BAT240AE6327 BAT240AE6327 Infineon Technologies INFNS11227-1.pdf?t.download=true&u=5oefqw Description: DIODE ARRAY SCHOTTKY 240V SOT-23
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 400 mA
Voltage - DC Reverse (Vr) (Max): 240 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: PG-SOT23
Current - Average Rectified (Io) (per Diode): 400mA (DC)
Diode Configuration: 1 Pair Series Connection
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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PEF 21624 E V1.2-G Infineon Technologies SDFE-4%2C%202%2C%201%2C%20PEF2x624E.pdf Description: IC TELECOM INTERFACE LBGA-324
Packaging: Tray
Package / Case: 324-LBGA
Mounting Type: Surface Mount
Function: Symmetrical DSL Front End (SDFE)
Interface: ISDN, SHDSL
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: P-LBGA-324
Number of Circuits: 1
Produkt ist nicht verfügbar
 Mindestbestellmenge: 84 Stücke
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PEF 22623 E V2.1 Infineon Technologies fundamentals-of-power-semiconductors Description: IC TELECOM INTERFACE LBGA-256
Packaging: Tray
Package / Case: 256-LBGA
Mounting Type: Surface Mount
Function: One Chip Rate Adaptive Transceiver
Interface: SHDSL
Supplier Device Package: PG-LBGA-256-1
Number of Circuits: 1
Produkt ist nicht verfügbar
 Mindestbestellmenge: 45 Stücke
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PEF 2426 H V1.1 D PEF 2426 H V1.1 D Infineon Technologies PEF%202426.pdf Description: IC TELECOM INTERFACE MQFP-44
Packaging: Tray
Package / Case: 44-QFP
Mounting Type: Surface Mount
Function: High Voltage Power Controller
Interface: ISDN, SHDSL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 6V
Current - Supply: 700µA
Supplier Device Package: P-MQFP-44
Part Status: Obsolete
Number of Circuits: 4
Produkt ist nicht verfügbar
 Mindestbestellmenge: 96 Stücke
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PEF 2426 H V1.1 GD PEF 2426 H V1.1 GD Infineon Technologies PEF%202426.pdf Description: IC TELECOM INTERFACE MQFP-44
Packaging: Tape & Reel (TR)
Package / Case: 44-QFP
Mounting Type: Surface Mount
Function: High Voltage Power Controller
Interface: ISDN, SHDSL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 6V
Current - Supply: 700µA
Supplier Device Package: P-MQFP-44
Part Status: Obsolete
Number of Circuits: 4
Produkt ist nicht verfügbar
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PEF 24622 E V2.1 PEF 24622 E V2.1 Infineon Technologies PEB_24622_PB.pdf Description: IC TELECOM INTERFACE 388BGA
Number of Circuits: 4
Supplier Device Package: PG-BGA-388-2
Interface: HDLC, SHDSL, TDM
Function: One Chip Rate Adaptive Transceiver
Mounting Type: Surface Mount
Package / Case: 388-BBGA
Packaging: Tray
Produkt ist nicht verfügbar
 Mindestbestellmenge: 24 Stücke
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PEF 24624 E V1.2 Infineon Technologies PEF%2024624%2C25%20E.pdf Description: IC TELECOM INTERFACE LBGA-324
Number of Circuits: 4
Supplier Device Package: P-LBGA-324
Operating Temperature: -40°C ~ 85°C
Interface: ISDN, SHDSL
Function: Symmetrical DSL Front End (SDFE)
Mounting Type: Surface Mount
Package / Case: 324-LBGA
Packaging: Tray
Produkt ist nicht verfügbar
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PEF 24624 E V1.2-G Infineon Technologies PEF%2024624%2C25%20E.pdf Description: IC TELECOM INTERFACE LBGA-324
Number of Circuits: 4
Supplier Device Package: P-LBGA-324
Interface: ISDN, SHDSL
Function: Symmetrical DSL Front End (SDFE)
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 324-LBGA
Packaging: Tray
Produkt ist nicht verfügbar
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PEF 24624 E V2.1-G Infineon Technologies PEF%2024624%2C25%20E.pdf Description: IC TELECOM INTERFACE LBGA-324
Number of Circuits: 4
Supplier Device Package: P-LBGA-324
Operating Temperature: -40°C ~ 85°C
Interface: ISDN, SHDSL
Function: Symmetrical DSL Front End (SDFE)
Mounting Type: Surface Mount
Package / Case: 324-LBGA
Packaging: Tray
Produkt ist nicht verfügbar
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PEF 24625 E V1.2 Infineon Technologies PEF%2024624%2C25%20E.pdf Description: IC TELECOM INTERFACE 484BGA
Power (Watts): 500 mW
Number of Circuits: 1
Supplier Device Package: 484-BGA (27x27)
Operating Temperature: -40°C ~ 85°C
Interface: DSL, SHDSL, TDM
Function: Symmetrical DSL Controller (SDC-16i)
Mounting Type: Surface Mount
Package / Case: 484-BBGA
Packaging: Tray
Produkt ist nicht verfügbar
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PEF 24624 E V2.2-G Infineon Technologies SDFE-4%2C%202%2C%201%2C%20PEF2x624E.pdf Description: IC TELECOM INTERFACE LBGA-324
Power (Watts): 500 mW
Number of Circuits: 4
Supplier Device Package: P-LBGA-324
Operating Temperature: -40°C ~ 85°C
Interface: DSL, SHDSL, TDM
Function: Symmetrical DSL Front End (SDFE)
Mounting Type: Surface Mount
Package / Case: 324-LBGA
Packaging: Tray
Produkt ist nicht verfügbar
 Mindestbestellmenge: 84 Stücke
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IPD65R380E6 IPD65R380E6 Infineon Technologies INFN-S-A0004583416-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 650V 10.6A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TO252-3-313
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
auf Bestellung 5090 Stücke:
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314+1.6 EUR
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IPB65R380C6ATMA1 IPB65R380C6ATMA1 Infineon Technologies IPx65R380C6.pdf Description: MOSFET N-CH 650V 10.6A D2PAK
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Power Dissipation (Max): 83W (Tc)
auf Bestellung 14860 Stücke:
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222+2.04 EUR
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IPB65R380C6 Infineon Technologies INFN-S-A0004583483-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Bulk
auf Bestellung 3263 Stücke:
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325+1.62 EUR
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IPD65R380E6ATMA1 IPD65R380E6ATMA1 Infineon Technologies Infineon-IPD65R380E6-DS-v02_01-en.pdf?fileId=db3a30433efacd9a013f09622c742fd5 Description: MOSFET N-CH 650V 10.6A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO252-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
auf Bestellung 2500 Stücke:
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2500+1.05 EUR
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IPD65R380E6ATMA1 IPD65R380E6ATMA1 Infineon Technologies Infineon-IPD65R380E6-DS-v02_01-en.pdf?fileId=db3a30433efacd9a013f09622c742fd5 Description: MOSFET N-CH 650V 10.6A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO252-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
auf Bestellung 4442 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.64 EUR
10+2.33 EUR
100+1.59 EUR
500+1.27 EUR
1000+1.16 EUR
Mindestbestellmenge: 5 Stücke
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IPP65R380C6 Infineon Technologies INFN-S-A0004583483-1.pdf?t.download=true&u=5oefqw Description: POWER FIELD-EFFECT TRANSISTOR, 1
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Produkt ist nicht verfügbar
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IPP65R380E6 IPP65R380E6 Infineon Technologies INFNS27844-1.pdf?t.download=true&u=5oefqw Description: IPP65R380E6 - 650V-700V COOLMOS
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Produkt ist nicht verfügbar
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BF771E6765N BF771E6765N Infineon Technologies INFNS10734-1.pdf?t.download=true&u=5oefqw Description: RF TRANS NPN 12V 8GHZ PG-SOT-23
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: PG-SOT23-3-4
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Frequency - Transition: 8GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Voltage - Collector Emitter Breakdown (Max): 12V
Current - Collector (Ic) (Max): 80mA
Power - Max: 580mW
Gain: 15dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
auf Bestellung 111000 Stücke:
Lieferzeit 10-14 Tag (e)
4157+0.12 EUR
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IPB060N15N5ATMA1 IPB060N15N5ATMA1 Infineon Technologies Infineon-IPB060N15N5-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b5ca333d3364d Description: MOSFET N-CH 150V 136A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 136A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 68A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 180µA
Supplier Device Package: PG-TO263-7-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 75 V
auf Bestellung 1000 Stücke:
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1000+2.95 EUR
Mindestbestellmenge: 1000 Stücke
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IPB060N15N5ATMA1 IPB060N15N5ATMA1 Infineon Technologies Infineon-IPB060N15N5-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b5ca333d3364d Description: MOSFET N-CH 150V 136A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 136A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 68A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 180µA
Supplier Device Package: PG-TO263-7-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 75 V
auf Bestellung 2292 Stücke:
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3+8.73 EUR
10+5.81 EUR
100+4.15 EUR
500+3.62 EUR
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IPBE65R075CFD7AATMA1 IPBE65R075CFD7AATMA1 Infineon Technologies Infineon-IPBE65R075CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46270c4f93e0170f32a7a137c8a Description: MOSFET N-CH 650V 32A TO263-7
Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Qualification: AEC-Q101
Grade: Automotive
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-7-3-10
Vgs(th) (Max) @ Id: 4.5V @ 820µA
Power Dissipation (Max): 171W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 16.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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IPBE65R230CFD7AATMA1 IPBE65R230CFD7AATMA1 Infineon Technologies Infineon-IPBE65R230CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46270c4f93e0170f33cb5727c93 Description: MOSFET N-CH 650V 11A TO263-7
Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-7-3-10
Vgs(th) (Max) @ Id: 4.5V @ 260µA
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 5.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+1.91 EUR
Mindestbestellmenge: 1000 Stücke
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IPBE65R230CFD7AATMA1 IPBE65R230CFD7AATMA1 Infineon Technologies Infineon-IPBE65R230CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46270c4f93e0170f33cb5727c93 Description: MOSFET N-CH 650V 11A TO263-7
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-7-3-10
Vgs(th) (Max) @ Id: 4.5V @ 260µA
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 5.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 1375 Stücke:
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4+5.68 EUR
10+3.72 EUR
100+2.6 EUR
500+2.3 EUR
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PTMA080302MV1AUMA1 PTMA080302MV1AUMA1 Infineon Technologies PTMA080302M.pdf Description: IC AMP GSM 700MHZ-1GHZ DSO20-63
Frequency: 700MHz ~ 1GHz
Mounting Type: Surface Mount
Package / Case: 20-SOIC (0.433", 11.00mm Width) Exposed Pad
Packaging: Bulk
Part Status: Obsolete
Supplier Device Package: PG-DSO-20-63
Gain: 30dB
RF Type: GSM, EDGE
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CY7C1399BL-12ZXCT CY7C1399BL-12ZXCT Infineon Technologies CY7C1399B%20RevD.pdf Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Bulk
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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CY25811ZXCT CY25811ZXCT Infineon Technologies cy25811,12,14_8.pdf Description: IC CLOCK GEN 3.3V SS 8-TSSOP
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BSC0502NSIATMA1 BSC0502NSIATMA1 Infineon Technologies Infineon-BSC0502NSI-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014efe055d2f662a Description: MOSFET N-CH 30V 26A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
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BSC0502NSIATMA1 BSC0502NSIATMA1 Infineon Technologies Infineon-BSC0502NSI-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014efe055d2f662a Description: MOSFET N-CH 30V 26A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
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500+1.05 EUR
1000+0.96 EUR
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KP229E2701XTMA1 KP229E2701XTMA1 Infineon Technologies KP229E2701_DS_Rev_1.0.pdf?folderId=db3a30431d8a6b3c011dd8fc5a954267&fileId=db3a30432ad629a6012af6bce0290b5d Description: SENSOR 43.51PSIA 4.65V DSOF8
Features: Amplified Output, Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: 8-SMD Module
Output Type: Analog Voltage
Mounting Type: Surface Mount
Output: 0.4 V ~ 4.65 V
Operating Pressure: 1.45PSI ~ 43.51PSI (10kPa ~ 300kPa)
Pressure Type: Absolute
Accuracy: ±0.544PSI (±3.75kPa)
Operating Temperature: -40°C ~ 140°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Applications: Board Mount
Supplier Device Package: PG-DSOF-8-16
Port Style: No Port
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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IRLR8721TRPBF-1 IRLR8721TRPBF-1 Infineon Technologies IRLR8721PbF-1_7-30-14.pdf Description: MOSFET N-CH 30V 65A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 25A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 15 V
Produkt ist nicht verfügbar
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XC822MT1FRIAAFXUMA1 Infineon-XC822_XC824-DS-v01_02-en.pdf?fileId=db3a3043271faefd01273d68a3d968df
XC822MT1FRIAAFXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 4KB FLASH 16TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 4x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.5V ~ 5.5V
Connectivity: I2C, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, LED, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-16-1
Part Status: Last Time Buy
Number of I/O: 13
DigiKey Programmable: Not Verified
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170+2.61 EUR
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SAF-XC822T-0FRIAA INFNS19723-1.pdf?t.download=true&u=5oefqw
SAF-XC822T-0FRIAA
Hersteller: Infineon Technologies
Description: XC800 I-FAMILY MICROCONTROLLER ,
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 2KB (2K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 4x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.5V ~ 5.5V
Connectivity: I2C, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, LED, POR, PWM, Touch-Sense, WDT
Supplier Device Package: PG-TSSOP-16
Part Status: Active
Number of I/O: 13
DigiKey Programmable: Not Verified
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306+1.58 EUR
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SAF-XC822T-1FRIAA INFNS19723-1.pdf?t.download=true&u=5oefqw
SAF-XC822T-1FRIAA
Hersteller: Infineon Technologies
Description: XC800 I-FAMILY MICROCONTROLLER ,
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 4x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.5V ~ 5.5V
Connectivity: I2C, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, LED, POR, PWM, Touch-Sense, WDT
Supplier Device Package: PG-TSSOP-16
Part Status: Active
Number of I/O: 13
DigiKey Programmable: Not Verified
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249+1.95 EUR
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PEB20571FV2.3
Hersteller: Infineon Technologies
Description: DELIC-PB DSP EMBEDDED LINE CONT
Packaging: Bulk
auf Bestellung 90 Stücke:
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15+31.47 EUR
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SIGC12T60NCX7SA1
Hersteller: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Current - Collector Pulsed (Icm): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 10 A
Test Condition: 300V, 10A, 27Ohm, 15V
Td (on/off) @ 25°C: 21ns/110ns
IGBT Type: NPT
Supplier Device Package: Die
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
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IM828XCCXKMA1 Infineon-IM828-XCC-DataSheet-v02_00-EN.pdf?fileId=5546d4627448fb2b0174583d4d6d430c
IM828XCCXKMA1
Hersteller: Infineon Technologies
Description: MOSFET IPM 1.2KV 35A 24-PWRDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.094", 27.80mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase Inverter
Voltage - Isolation: 2500Vrms
Part Status: Active
Current: 35 A
Voltage: 1.2 kV
auf Bestellung 285 Stücke:
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1+152.08 EUR
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IFX2931GV33XUMA1 IFX2931.pdf
IFX2931GV33XUMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR 3.3V 100MA 8DSO
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
PSRR: 80dB (120Hz)
Voltage Dropout (Max): 1.1V @ 100mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
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58+7.79 EUR
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TLE4299GV33XUMA1 TLE4299%28GV%2CGMV%2933.pdf
TLE4299GV33XUMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR 3.3V 150MA 8DSO-3
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 105 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8-3
Voltage - Output (Min/Fixed): 3.3V
Control Features: Reset
Grade: Automotive
PSRR: 66dB (100Hz)
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 2 mA
Qualification: AEC-Q100
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253+1.79 EUR
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TLE8457BSJXUMA1 Infineon-TLE8457-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a3d3694ae6179
TLE8457BSJXUMA1
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER 1/1 DSO-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 3.3V
Number of Drivers/Receivers: 1/1
Protocol: LINbus
Supplier Device Package: PG-DSO-8
Receiver Hysteresis: 175 mV
Grade: Automotive
Qualification: AEC-Q100
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TLE8457BSJXUMA1 Infineon-TLE8457-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a3d3694ae6179
TLE8457BSJXUMA1
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER 1/1 DSO-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 3.3V
Number of Drivers/Receivers: 1/1
Protocol: LINbus
Supplier Device Package: PG-DSO-8
Receiver Hysteresis: 175 mV
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLS208D1EJV33XUMA1 INFN-S-A0001299229-1.pdf?t.download=true&u=5oefqw
TLS208D1EJV33XUMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR 3.3V 800MA 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 170 µA
Voltage - Input (Max): 18V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable, Reset
Grade: Automotive
Part Status: Active
PSRR: 62dB (10kHz)
Voltage Dropout (Max): 1V @ 800mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 250 µA
Qualification: AEC-Q100
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6+3.38 EUR
10+2.5 EUR
25+2.28 EUR
100+2.04 EUR
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1000+1.8 EUR
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IDK08G120C5XTMA1 Infineon-IDK08G120C5-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e3bf0d8a10f3e
IDK08G120C5XTMA1
Hersteller: Infineon Technologies
Description: DIODE SIC 1.2KV 22.8A PGTO26321
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 365pF @ 1V, 1MHz
Current - Average Rectified (Io): 22.8A
Supplier Device Package: PG-TO263-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
Reverse Recovery Time (trr): 0 ns
auf Bestellung 1464 Stücke:
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3+7.41 EUR
10+4.87 EUR
100+3.42 EUR
500+2.8 EUR
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TDB6HK135N16LOFHOSA1
Hersteller: Infineon Technologies
Description: SCR MODULE VDRM 1600V 70A
Packaging: Bulk
auf Bestellung 168 Stücke:
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1+348.39 EUR
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TDB6HK135N16LOFHOSA1
Hersteller: Infineon Technologies
Description: SCR MODULE VDRM 1600V 70A
Packaging: Tray
Produkt ist nicht verfügbar
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SAK-XC2238N-24F40LAA INFNS15642-1.pdf?t.download=true&u=5oefqw
SAK-XC2238N-24F40LAA
Hersteller: Infineon Technologies
Description: 16-BIT C166 MMC - XC2200 FAMILY
DigiKey Programmable: Not Verified
Number of I/O: 38
Part Status: Active
Supplier Device Package: PG-LQFP-64-6
Peripherals: I²S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16/32-Bit
Data Converters: A/D 9x10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 26K x 8
Program Memory Size: 192KB (192K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP Exposed Pad
Packaging: Bulk
Produkt ist nicht verfügbar
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SAK-XC2238N-40F80LAA INFNS15642-1.pdf?t.download=true&u=5oefqw
SAK-XC2238N-40F80LAA
Hersteller: Infineon Technologies
Description: 16-BIT C166 MMC - XC2200 FAMILY
DigiKey Programmable: Not Verified
Number of I/O: 38
Part Status: Active
Supplier Device Package: PG-LQFP-64-6
Peripherals: I²S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16/32-Bit
Data Converters: A/D 9x10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 42K x 8
Program Memory Size: 320KB (320K x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP Exposed Pad
Packaging: Bulk
Produkt ist nicht verfügbar
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IRGC4066B Short_Form_Cat_2016.pdf
Hersteller: Infineon Technologies
Description: IGBT CHIP
Produkt ist nicht verfügbar
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AIGB30N65H5ATMA1 Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4
AIGB30N65H5ATMA1
Hersteller: Infineon Technologies
Description: IGBT NPT 650V 30A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Produkt ist nicht verfügbar
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IRF7459TRPBF IRF7459PbF.pdf
IRF7459TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 12A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BGA715L7E6327XTSA1 BGA715L7.pdf
BGA715L7E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF AMP GPS 1575MHZ TSLP7-1
Packaging: Bulk
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1575MHz
RF Type: GPS
Voltage - Supply: 1.5V ~ 3.3V
Gain: 20dB
Current - Supply: 3.3mA
Noise Figure: 0.75dB
P1dB: -15.5dBm
Test Frequency: 1.575GHz
Supplier Device Package: PG-TSLP-7-1
Part Status: Obsolete
auf Bestellung 4435 Stücke:
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AnzahlPreis
457+1 EUR
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2EDF7275KXUMA2 Infineon-2EDF7275K-DataSheet-v02_08-EN.pdf?fileId=5546d462636cc8fb0163b0900069305a
2EDF7275KXUMA2
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 13TFLGA
Packaging: Tape & Reel (TR)
Package / Case: 13-TFLGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TFLGA-13-1
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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2EDF7275KXUMA2 Infineon-2EDF7275K-DataSheet-v02_08-EN.pdf?fileId=5546d462636cc8fb0163b0900069305a
2EDF7275KXUMA2
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 13TFLGA
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 4A, 8A
Logic Voltage - VIL, VIH: -, 1.65V
Gate Type: MOSFET (N-Channel, P-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Supplier Device Package: PG-TFLGA-13-1
Input Type: Non-Inverting
Voltage - Supply: 20V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 13-TFLGA
Packaging: Cut Tape (CT)
auf Bestellung 1627 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
6+3.34 EUR
10+2.48 EUR
25+2.26 EUR
100+2.02 EUR
250+1.91 EUR
500+1.84 EUR
1000+1.78 EUR
Mindestbestellmenge: 6 Stücke
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BSC146N10LS5ATMA1 Infineon-BSC146N10LS5-DataSheet-v02_02-EN.pdf?fileId=5546d4626b2d8e69016b4c4f80f313ea
BSC146N10LS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 44A TDSON-8-6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 22A, 10V
Power Dissipation (Max): 2.5W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 23µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5000+1.1 EUR
10000+1.06 EUR
Mindestbestellmenge: 5000 Stücke
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IRFSL3107PBF irfs3107pbf.pdf?fileId=5546d462533600a4015356365a922154
IRFSL3107PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 195A TO262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 140A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9370 pF @ 50 V
auf Bestellung 4390 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
109+4.36 EUR
Mindestbestellmenge: 109 Stücke
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ISP75DP06LMXTSA1 Infineon-ISP75DP06LM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a0730ea4a739d
ISP75DP06LMXTSA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 1.1A SOT223-4
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-SOT223-4
Vgs(th) (Max) @ Id: 2V @ 77µA
Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 1.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
auf Bestellung 1921 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
22+0.83 EUR
30+0.6 EUR
100+0.38 EUR
500+0.29 EUR
Mindestbestellmenge: 22 Stücke
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IFX9202EDXUMA1 Infineon-IFX9202ED-DS-v01_00-EN.pdf?fileId=5546d4625d5945ed015deaa103010108
IFX9202EDXUMA1
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRIVER DSO36-72
Qualification: AEC-Q100
Grade: Automotive
Load Type: Inductive
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Supplier Device Package: PG-DSO-36-72
Voltage - Load: 5V ~ 36V
Applications: DC Motors, General Purpose
Rds On (Typ): 100mOhm LS + HS
Voltage - Supply: 2.9V ~ 5.5V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 125°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: 36-BFSOP (0.295", 7.50mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IFX9202EDXUMA1 Infineon-IFX9202ED-DS-v01_00-EN.pdf?fileId=5546d4625d5945ed015deaa103010108
IFX9202EDXUMA1
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRIVER DSO36-72
Packaging: Cut Tape (CT)
Package / Case: 36-BFSOP (0.295", 7.50mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.9V ~ 5.5V
Rds On (Typ): 100mOhm LS + HS
Applications: DC Motors, General Purpose
Voltage - Load: 5V ~ 36V
Supplier Device Package: PG-DSO-36-72
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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FS450R12OE4BOSA1 Infineon-FS450R12OE4-DS-v03_02-en_de.pdf?fileId=db3a304334c41e910134d756add742c1
FS450R12OE4BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 660A 2250W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 660 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2250 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+636.29 EUR
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FS300R12OE4BOSA1 Infineon-FS300R12OE4-DS-v03_01-en_de.pdf?fileId=db3a304335f1f4b601363fdf1629503d
FS300R12OE4BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 460A 1650W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 460 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1650 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
Produkt ist nicht verfügbar
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BAT240AE6327 INFNS11227-1.pdf?t.download=true&u=5oefqw
BAT240AE6327
Hersteller: Infineon Technologies
Description: DIODE ARRAY SCHOTTKY 240V SOT-23
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 400 mA
Voltage - DC Reverse (Vr) (Max): 240 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: PG-SOT23
Current - Average Rectified (Io) (per Diode): 400mA (DC)
Diode Configuration: 1 Pair Series Connection
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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PEF 21624 E V1.2-G SDFE-4%2C%202%2C%201%2C%20PEF2x624E.pdf
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE LBGA-324
Packaging: Tray
Package / Case: 324-LBGA
Mounting Type: Surface Mount
Function: Symmetrical DSL Front End (SDFE)
Interface: ISDN, SHDSL
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: P-LBGA-324
Number of Circuits: 1
Produkt ist nicht verfügbar
Mindestbestellmenge: 84 Stücke
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PEF 22623 E V2.1 fundamentals-of-power-semiconductors
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE LBGA-256
Packaging: Tray
Package / Case: 256-LBGA
Mounting Type: Surface Mount
Function: One Chip Rate Adaptive Transceiver
Interface: SHDSL
Supplier Device Package: PG-LBGA-256-1
Number of Circuits: 1
Produkt ist nicht verfügbar
Mindestbestellmenge: 45 Stücke
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PEF 2426 H V1.1 D PEF%202426.pdf
PEF 2426 H V1.1 D
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE MQFP-44
Packaging: Tray
Package / Case: 44-QFP
Mounting Type: Surface Mount
Function: High Voltage Power Controller
Interface: ISDN, SHDSL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 6V
Current - Supply: 700µA
Supplier Device Package: P-MQFP-44
Part Status: Obsolete
Number of Circuits: 4
Produkt ist nicht verfügbar
Mindestbestellmenge: 96 Stücke
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PEF 2426 H V1.1 GD PEF%202426.pdf
PEF 2426 H V1.1 GD
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE MQFP-44
Packaging: Tape & Reel (TR)
Package / Case: 44-QFP
Mounting Type: Surface Mount
Function: High Voltage Power Controller
Interface: ISDN, SHDSL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 6V
Current - Supply: 700µA
Supplier Device Package: P-MQFP-44
Part Status: Obsolete
Number of Circuits: 4
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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PEF 24622 E V2.1 PEB_24622_PB.pdf
PEF 24622 E V2.1
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE 388BGA
Number of Circuits: 4
Supplier Device Package: PG-BGA-388-2
Interface: HDLC, SHDSL, TDM
Function: One Chip Rate Adaptive Transceiver
Mounting Type: Surface Mount
Package / Case: 388-BBGA
Packaging: Tray
Produkt ist nicht verfügbar
Mindestbestellmenge: 24 Stücke
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PEF 24624 E V1.2 PEF%2024624%2C25%20E.pdf
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE LBGA-324
Number of Circuits: 4
Supplier Device Package: P-LBGA-324
Operating Temperature: -40°C ~ 85°C
Interface: ISDN, SHDSL
Function: Symmetrical DSL Front End (SDFE)
Mounting Type: Surface Mount
Package / Case: 324-LBGA
Packaging: Tray
Produkt ist nicht verfügbar
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PEF 24624 E V1.2-G PEF%2024624%2C25%20E.pdf
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE LBGA-324
Number of Circuits: 4
Supplier Device Package: P-LBGA-324
Interface: ISDN, SHDSL
Function: Symmetrical DSL Front End (SDFE)
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 324-LBGA
Packaging: Tray
Produkt ist nicht verfügbar
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PEF 24624 E V2.1-G PEF%2024624%2C25%20E.pdf
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE LBGA-324
Number of Circuits: 4
Supplier Device Package: P-LBGA-324
Operating Temperature: -40°C ~ 85°C
Interface: ISDN, SHDSL
Function: Symmetrical DSL Front End (SDFE)
Mounting Type: Surface Mount
Package / Case: 324-LBGA
Packaging: Tray
Produkt ist nicht verfügbar
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PEF 24625 E V1.2 PEF%2024624%2C25%20E.pdf
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE 484BGA
Power (Watts): 500 mW
Number of Circuits: 1
Supplier Device Package: 484-BGA (27x27)
Operating Temperature: -40°C ~ 85°C
Interface: DSL, SHDSL, TDM
Function: Symmetrical DSL Controller (SDC-16i)
Mounting Type: Surface Mount
Package / Case: 484-BBGA
Packaging: Tray
Produkt ist nicht verfügbar
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PEF 24624 E V2.2-G SDFE-4%2C%202%2C%201%2C%20PEF2x624E.pdf
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE LBGA-324
Power (Watts): 500 mW
Number of Circuits: 4
Supplier Device Package: P-LBGA-324
Operating Temperature: -40°C ~ 85°C
Interface: DSL, SHDSL, TDM
Function: Symmetrical DSL Front End (SDFE)
Mounting Type: Surface Mount
Package / Case: 324-LBGA
Packaging: Tray
Produkt ist nicht verfügbar
Mindestbestellmenge: 84 Stücke
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IPD65R380E6 INFN-S-A0004583416-1.pdf?t.download=true&u=5oefqw
IPD65R380E6
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 10.6A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TO252-3-313
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
auf Bestellung 5090 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
314+1.6 EUR
Mindestbestellmenge: 314 Stücke
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IPB65R380C6ATMA1 IPx65R380C6.pdf
IPB65R380C6ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 10.6A D2PAK
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Power Dissipation (Max): 83W (Tc)
auf Bestellung 14860 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
222+2.04 EUR
Mindestbestellmenge: 222 Stücke
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IPB65R380C6 INFN-S-A0004583483-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Bulk
auf Bestellung 3263 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
325+1.62 EUR
Mindestbestellmenge: 325 Stücke
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IPD65R380E6ATMA1 Infineon-IPD65R380E6-DS-v02_01-en.pdf?fileId=db3a30433efacd9a013f09622c742fd5
IPD65R380E6ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 10.6A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO252-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2500+1.05 EUR
Mindestbestellmenge: 2500 Stücke
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IPD65R380E6ATMA1 Infineon-IPD65R380E6-DS-v02_01-en.pdf?fileId=db3a30433efacd9a013f09622c742fd5
IPD65R380E6ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 10.6A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO252-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
auf Bestellung 4442 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5+3.64 EUR
10+2.33 EUR
100+1.59 EUR
500+1.27 EUR
1000+1.16 EUR
Mindestbestellmenge: 5 Stücke
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IPP65R380C6 INFN-S-A0004583483-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR, 1
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Produkt ist nicht verfügbar
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IPP65R380E6 INFNS27844-1.pdf?t.download=true&u=5oefqw
IPP65R380E6
Hersteller: Infineon Technologies
Description: IPP65R380E6 - 650V-700V COOLMOS
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Produkt ist nicht verfügbar
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BF771E6765N INFNS10734-1.pdf?t.download=true&u=5oefqw
BF771E6765N
Hersteller: Infineon Technologies
Description: RF TRANS NPN 12V 8GHZ PG-SOT-23
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: PG-SOT23-3-4
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Frequency - Transition: 8GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Voltage - Collector Emitter Breakdown (Max): 12V
Current - Collector (Ic) (Max): 80mA
Power - Max: 580mW
Gain: 15dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
auf Bestellung 111000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4157+0.12 EUR
Mindestbestellmenge: 4157 Stücke
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IPB060N15N5ATMA1 Infineon-IPB060N15N5-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b5ca333d3364d
IPB060N15N5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 136A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 136A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 68A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 180µA
Supplier Device Package: PG-TO263-7-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 75 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1000+2.95 EUR
Mindestbestellmenge: 1000 Stücke
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IPB060N15N5ATMA1 Infineon-IPB060N15N5-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b5ca333d3364d
IPB060N15N5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 136A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 136A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 68A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 180µA
Supplier Device Package: PG-TO263-7-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 75 V
auf Bestellung 2292 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+8.73 EUR
10+5.81 EUR
100+4.15 EUR
500+3.62 EUR
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IPBE65R075CFD7AATMA1 Infineon-IPBE65R075CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46270c4f93e0170f32a7a137c8a
IPBE65R075CFD7AATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 32A TO263-7
Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Qualification: AEC-Q101
Grade: Automotive
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-7-3-10
Vgs(th) (Max) @ Id: 4.5V @ 820µA
Power Dissipation (Max): 171W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 16.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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IPBE65R230CFD7AATMA1 Infineon-IPBE65R230CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46270c4f93e0170f33cb5727c93
IPBE65R230CFD7AATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 11A TO263-7
Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-7-3-10
Vgs(th) (Max) @ Id: 4.5V @ 260µA
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 5.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1000+1.91 EUR
Mindestbestellmenge: 1000 Stücke
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IPBE65R230CFD7AATMA1 Infineon-IPBE65R230CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46270c4f93e0170f33cb5727c93
IPBE65R230CFD7AATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 11A TO263-7
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-7-3-10
Vgs(th) (Max) @ Id: 4.5V @ 260µA
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 5.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 1375 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4+5.68 EUR
10+3.72 EUR
100+2.6 EUR
500+2.3 EUR
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PTMA080302MV1AUMA1 PTMA080302M.pdf
PTMA080302MV1AUMA1
Hersteller: Infineon Technologies
Description: IC AMP GSM 700MHZ-1GHZ DSO20-63
Frequency: 700MHz ~ 1GHz
Mounting Type: Surface Mount
Package / Case: 20-SOIC (0.433", 11.00mm Width) Exposed Pad
Packaging: Bulk
Part Status: Obsolete
Supplier Device Package: PG-DSO-20-63
Gain: 30dB
RF Type: GSM, EDGE
auf Bestellung 166 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
11+51.27 EUR
Mindestbestellmenge: 11 Stücke
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CY7C1399BL-12ZXCT CY7C1399B%20RevD.pdf
CY7C1399BL-12ZXCT
Hersteller: Infineon Technologies
Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Bulk
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
423+1.15 EUR
Mindestbestellmenge: 423 Stücke
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CY25811ZXCT cy25811,12,14_8.pdf
CY25811ZXCT
Hersteller: Infineon Technologies
Description: IC CLOCK GEN 3.3V SS 8-TSSOP
auf Bestellung 6860 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
219+2.2 EUR
Mindestbestellmenge: 219 Stücke
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BSC0502NSIATMA1 Infineon-BSC0502NSI-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014efe055d2f662a
BSC0502NSIATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 26A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5000+0.82 EUR
Mindestbestellmenge: 5000 Stücke
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BSC0502NSIATMA1 Infineon-BSC0502NSI-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014efe055d2f662a
BSC0502NSIATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 26A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
auf Bestellung 23737 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
6+3.08 EUR
10+1.96 EUR
100+1.32 EUR
500+1.05 EUR
1000+0.96 EUR
2000+0.88 EUR
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KP229E2701XTMA1 KP229E2701_DS_Rev_1.0.pdf?folderId=db3a30431d8a6b3c011dd8fc5a954267&fileId=db3a30432ad629a6012af6bce0290b5d
KP229E2701XTMA1
Hersteller: Infineon Technologies
Description: SENSOR 43.51PSIA 4.65V DSOF8
Features: Amplified Output, Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: 8-SMD Module
Output Type: Analog Voltage
Mounting Type: Surface Mount
Output: 0.4 V ~ 4.65 V
Operating Pressure: 1.45PSI ~ 43.51PSI (10kPa ~ 300kPa)
Pressure Type: Absolute
Accuracy: ±0.544PSI (±3.75kPa)
Operating Temperature: -40°C ~ 140°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Applications: Board Mount
Supplier Device Package: PG-DSOF-8-16
Port Style: No Port
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 4971 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+5.9 EUR
5+5.27 EUR
10+5.04 EUR
25+4.77 EUR
50+4.58 EUR
100+4.41 EUR
500+4.06 EUR
Mindestbestellmenge: 3 Stücke
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IRLR8721TRPBF-1 IRLR8721PbF-1_7-30-14.pdf
IRLR8721TRPBF-1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 65A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 25A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 15 V
Produkt ist nicht verfügbar
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