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SPS03N60C3AKMA1 SPS03N60C3AKMA1 Infineon Technologies SPS03N60C3AKMA1.pdf Description: MOSFET N-CH 650V 3.2A TO251-3-11
Packaging: Bulk
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO251-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
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IKD03N60RFATMA1 IKD03N60RFATMA1 Infineon Technologies Infineon-IKD03N60RF-DS-v02_06-EN.pdf?fileId=db3a30433c5c92fb013c5d3978350068 Description: IGBT TRENCH/FS 600V 6.5A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 31 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 2.5A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 10ns/128ns
Switching Energy: 50µJ (on), 40µJ (off)
Test Condition: 400V, 2.5A, 68Ohm, 15V
Gate Charge: 17.1 nC
Part Status: Active
Current - Collector (Ic) (Max): 6.5 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 7.5 A
Power - Max: 53.6 W
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ILB03N60 ILB03N60 Infineon Technologies INFNS07533-1.pdf?t.download=true&u=5oefqw Description: IGBT, 4.5A, 600V, N-CHANNEL
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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ILP03N60 ILP03N60 Infineon Technologies INFNS07428-1.pdf?t.download=true&u=5oefqw Description: IGBT, 4.5A, 600V, N-CHANNEL
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Input Type: Standard
Reverse Recovery Time (trr): 250 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 10V, 3A
Supplier Device Package: PG-TO220-3-1
Td (on/off) @ 25°C: 15ns/100ns
Switching Energy: 12µJ (on), 20µJ (off)
Test Condition: 400V, 0.8A, 60Ohm, 10V
Gate Charge: 8.5 nC
Part Status: Active
Current - Collector (Ic) (Max): 4.5 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 5.5 A
Power - Max: 27 W
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SPD03N60C3 SPD03N60C3 Infineon Technologies Infineon-SPD03N60C3-DS-v02_06-NA.pdf?fileId=db3a3043191a246301192907f3b27f4b Description: MOSFET N-CH 600V 3.2A TO252
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TO252-3-313
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Power Dissipation (Max): 38W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Produkt ist nicht verfügbar
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IDL04G65C5XUMA2 IDL04G65C5XUMA2 Infineon Technologies Infineon-IDL04G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0143000fb94c146a Description: DIODE SIL CARB 650V 4A PGVSON4
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: PG-VSON-4
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 70 µA @ 650 V
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IDL04G65C5XUMA2 IDL04G65C5XUMA2 Infineon Technologies Infineon-IDL04G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0143000fb94c146a Description: DIODE SIL CARB 650V 4A PGVSON4
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: PG-VSON-4
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 70 µA @ 650 V
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IM818SCCXKMA1 IM818SCCXKMA1 Infineon Technologies Infineon-IM818-SCC-DS-v02_01-EN.pdf?fileId=5546d46265f064ff0165f9e925ca2ea1 Description: CIPOS MAXI 1200V 8A 24PWRDIP
Voltage: 1.2 kV
Current: 8 A
Voltage - Isolation: 2500Vrms
Configuration: 3 Phase Inverter
Type: IGBT
Mounting Type: Through Hole
Package / Case: 24-PowerDIP Module (1.205", 30.60mm)
Packaging: Tube
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IRF100P219AKMA1 IRF100P219AKMA1 Infineon Technologies Infineon-IRF100P219-DataSheet-v02_01-EN.pdf?fileId=5546d462602a9dc80160e20d52df4b86 Description: MOSFET N-CH 100V TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 203A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 278µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12020 pF @ 50 V
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IRF100P218AKMA1 IRF100P218AKMA1 Infineon Technologies Infineon-IRF100P218-DataSheet-v02_01-EN.pdf?fileId=5546d462602a9dc80160e20d3eca4b83 Description: MOSFET N-CH 100V 209A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 209A (Tc)
Rds On (Max) @ Id, Vgs: 1.28mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 556W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 278µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 412 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24000 pF @ 50 V
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FP150R07N3E4 Infineon Technologies INFNS28449-1.pdf?t.download=true&u=5oefqw Description: FP150R07 - IGBT MODULE
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FP150R07N3E4_B11 Infineon Technologies INFNS28450-1.pdf?t.download=true&u=5oefqw Description: FP150R07 - IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 430 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V
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ESD201-B2-03LRHE6327 Infineon Technologies INFN-S-A0000325460-1.pdf?t.download=true&u=5oefqw Description: TRANS VOLTAGE SUPPRESSOR DIODE
Packaging: Bulk
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-TSLP-3
Bidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 12.1V (Typ), 10.2V (Typ)
Power Line Protection: No
Part Status: Active
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STT1400N18P55XPSA1 Infineon Technologies Infineon-STT1400N18P55-DataSheet-v03_01-EN.pdf?fileId=5546d46272aa54c00172bc99a9775672 Description: THYR / DIODE MODULE DK
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65DN06B02ELEMXPSA1 65DN06B02ELEMXPSA1 Infineon Technologies Infineon-65DN06B02-DataSheet-v03_01-EN.pdf?fileId=5546d4627506bb320175079ef4d40391 Description: DIODE STD 600V 15130A BGDELEM1
Packaging: Tray
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15130A
Supplier Device Package: BG-D-ELEM-1
Operating Temperature - Junction: 180°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 8000 A
Current - Reverse Leakage @ Vr: 100 mA @ 600 V
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STT1900N18P55XPSA1 Infineon Technologies Infineon-STT1900N18P55-DataSheet-v01_00-EN.pdf?fileId=5546d46272aa54c00172bc999c30566f Description: THYR / DIODE MODULE DK
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T700N22TOFXPSA1 Infineon Technologies Infineon-T700N-DataSheet-v03_01-EN.pdf?fileId=5546d4627112d9d501712b084825402e Description: T700N22 - PHASE CONTROL THYRISTO
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T300N14TOFXPSA1 Infineon Technologies Infineon-T300N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd80128a5a8d27c0053 Description: SCR MODULE 1800V 400A DO200AA
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T300N16TOFXPSA1 Infineon Technologies Infineon-T300N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd80128a5a8d27c0053 Description: SCR MODULE 1800V 400A DO200AA
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T430N16TOFXPSA1 Infineon Technologies Infineon-T430N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd801286374f6a45325 Description: SCR MODULE 1800V 700A DO200AA
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T660N22TOFXPSA1 Infineon Technologies Infineon-T660N-DataSheet-v01_00-EN.pdf?fileId=5546d4627112d9d501712afaeacd3fe7 Description: SCR MODULE 2600V 1500A DO200AB
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T660N26TOFXPSA1 Infineon Technologies Infineon-T660N-DataSheet-v01_00-EN.pdf?fileId=5546d4627112d9d501712afaeacd3fe7 Description: SCR MODULE 2600V 1500A DO200AB
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MB95F696KNPMC-G-SNERE2 MB95F696KNPMC-G-SNERE2 Infineon Technologies Prod_Selector_Guide_11-25-15.pdf Description: IC MCU 8BIT 36KB FLASH 48LQFP
RAM Size: 1K x 8
Program Memory Size: 36KB (36K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Number of I/O: 45
Supplier Device Package: 48-LQFP (7x7)
Peripherals: LVD, POR, PWM, WDT
Connectivity: I2C, LINbus, SIO, UART/USART
Voltage - Supply (Vcc/Vdd): 2.88V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 12x8/10b
Core Processor: F²MC-8FX
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
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7500+0.69 EUR
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MB95F696KNPMC-G-SNERE2 MB95F696KNPMC-G-SNERE2 Infineon Technologies Prod_Selector_Guide_11-25-15.pdf Description: IC MCU 8BIT 36KB FLASH 48LQFP
DigiKey Programmable: Not Verified
Number of I/O: 45
Supplier Device Package: 48-LQFP (7x7)
Peripherals: LVD, POR, PWM, WDT
Connectivity: I2C, LINbus, SIO, UART/USART
Voltage - Supply (Vcc/Vdd): 2.88V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 12x8/10b
Core Processor: F²MC-8FX
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 1K x 8
Program Memory Size: 36KB (36K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Cut Tape (CT)
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100+0.93 EUR
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41040324AWLXPSA1 Infineon Technologies Description: DIODE THYRISTOR
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BSO330N02KG Infineon Technologies INFNS27921-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Part Status: Active
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 1.2V @ 20µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 4.5V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.4W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
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IPP042N03LG IPP042N03LG Infineon Technologies INFNS16316-1.pdf?t.download=true&u=5oefqw Description: IPP042N03 - 12V-300V N-CHANNEL P
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BSC042N03LSG BSC042N03LSG Infineon Technologies INFNS27447-1.pdf?t.download=true&u=5oefqw Description: BSC042N03 - 12V-300V N-CHANNEL P
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IAUZ30N10S5L240ATMA1 IAUZ30N10S5L240ATMA1 Infineon Technologies Infineon-IAUZ30N10S5L240-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c8a62a9610dd8 Description: MOSFET N-CH 100V 30A 8TSDSON-32
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 15A, 10V
Power Dissipation (Max): 45.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 15µA
Supplier Device Package: PG-TSDSON-8-32
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 832 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
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14+1.61 EUR
100+1.06 EUR
500+0.83 EUR
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FP50R07U1E4BPSA1 FP50R07U1E4BPSA1 Infineon Technologies FP50R07U1E4.pdf Description: IGBT MODULE 650V 75A 230W MODULE
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 230 W
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 75 A
Part Status: Obsolete
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 50A
Operating Temperature: -40°C ~ 150°C
Configuration: Three Phase Inverter
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5+110.12 EUR
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FF150R17ME3GBOSA1 FF150R17ME3GBOSA1 Infineon Technologies Infineon-FF150R17ME3G-DS-v02_01-en_de.pdf?fileId=db3a30431441fb5d0114502cbb65039c Description: IGBT MOD 1700V 240A 1050W
Input Capacitance (Cies) @ Vce: 13.5 nF @ 25 V
Current - Collector Cutoff (Max): 3 mA
Power - Max: 1050 W
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 240 A
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 150A
Operating Temperature: -40°C ~ 125°C
Configuration: 2 Independent
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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FD150R12RT4HOSA1 FD150R12RT4HOSA1 Infineon Technologies Infineon-FD150R12RT4-DS-v02_03-en_de.pdf?fileId=db3a3043271faefd01279a5e45e041b2 Description: FD150R12 - IGBT MODULE
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DF150R12RT4HOSA1 DF150R12RT4HOSA1 Infineon Technologies Infineon-DF150R12RT4-DS-v02_02-en_de.pdf?fileId=db3a304327b89750012805d5d8646118 Description: IGBT MOD 1200V 150A 790W MOD
Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 790 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 150 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
Operating Temperature: -40°C ~ 150°C
Configuration: Single Chopper
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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FS50R12KT4B11BOSA1 FS50R12KT4B11BOSA1 Infineon Technologies Infineon-FS50R12KT4_B11-DS-v03_00-en_de.pdf?fileId=db3a30431a47d73d011a49630da90121 Description: IGBT MOD 1200V 50A 280W MOD
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 280 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
Operating Temperature: -40°C ~ 150°C
Configuration: Full Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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DF650R17IE4BOSA1 DF650R17IE4BOSA1 Infineon Technologies Infineon-DF650R17IE4-DS-v02_02-en_de.pdf?fileId=db3a30431ff9881501201f1e5a664bbc Description: IGBT MOD 1700V 930A 4150W
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 4150 W
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 930 A
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 650A
Operating Temperature: -40°C ~ 150°C
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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FS50R07N2E4B11BOSA1 FS50R07N2E4B11BOSA1 Infineon Technologies FS50R07N2E4_B11.pdf Description: IGBT MODULE 650V 70A 190W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Obsolete
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 190 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
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FP50R12KT4B16BOSA1 Infineon Technologies Description: IGBT MOD 1200V 100A 280W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 280 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
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FF1000R17IE4DB2S4BOSA2 Infineon Technologies Description: IGBT MOD 1700V 1390A AG-PRIME3-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1000A
NTC Thermistor: Yes
Supplier Device Package: AG-PRIME3-1
Current - Collector (Ic) (Max): 1390 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 6250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 81 nF @ 25 V
Produkt ist nicht verfügbar
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BSZ033NE2LS5ATMA1 BSZ033NE2LS5ATMA1 Infineon Technologies Infineon-BSZ033NE2LS5-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014f1820c4931820 Description: MOSFET N-CH 25V 18A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 12 V
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BSZ033NE2LS5ATMA1 BSZ033NE2LS5ATMA1 Infineon Technologies Infineon-BSZ033NE2LS5-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014f1820c4931820 Description: MOSFET N-CH 25V 18A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 12 V
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500+0.89 EUR
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CYBLE-222005-EVAL CYBLE-222005-EVAL Infineon Technologies Infineon-CYBLE-222005-EVAL_EZ-BLE_PROC_EVALUATION_BOARD-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0efab8ef10a2&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: DEVELOPMENT KIT CYBLE-222005
Packaging: Box
For Use With/Related Products: CYBLE-222005-00
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® Smart 4.x Low Energy (BLE)
Supplied Contents: Board(s)
Part Status: Obsolete
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PSB 50510 E V1.3-G Infineon Technologies Description: IC TELECOM INTERFACE 256-LBGA
Produkt ist nicht verfügbar
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IPD50R800CEAUMA1 IPD50R800CEAUMA1 Infineon Technologies Infineon-IPD50R800CE-DS-v02_03-EN.pdf?fileId=db3a304339d29c450139d424706c02c2 Description: CONSUMER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 1.5A, 13V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: PG-TO252-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
auf Bestellung 2500 Stücke:
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2500+0.54 EUR
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IPD50R800CEAUMA1 IPD50R800CEAUMA1 Infineon Technologies Infineon-IPD50R800CE-DS-v02_03-EN.pdf?fileId=db3a304339d29c450139d424706c02c2 Description: CONSUMER
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 1.5A, 13V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: PG-TO252-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
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100+0.86 EUR
500+0.71 EUR
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IPD50R2K0CE IPD50R2K0CE Infineon Technologies Part_Number_Guide_Web.pdf Description: N-CHANNEL POWER MOSFET CE
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IPD50R800CE IPD50R800CE Infineon Technologies INFN-S-A0002220638-1.pdf?t.download=true&u=5oefqw Description: IPD50R800 - 500V COOLMOS N-CHANN
Produkt ist nicht verfügbar
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IPD50R500CE IPD50R500CE Infineon Technologies INFN-S-A0001300081-1.pdf?t.download=true&u=5oefqw Description: IPD50R500 - 500V COOLMOS N-CHANN
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 2.3A, 13V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO252-3-344
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 433 pF @ 100 V
auf Bestellung 116541 Stücke:
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TLE4935LHALA1 TLE4935LHALA1 Infineon Technologies Infineon-TLE49X5L-DataSheet-v01_05-en.pdf?fileId=db3a304316f66ee80117549ac8b206b1 Description: MAGNETIC SWITCH LATCH SSO-3-2
Features: Temperature Compensated
Packaging: Tape & Box (TB)
Package / Case: 3-SSIP, SSO-3-02
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Through Hole
Function: Latch
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3.8V ~ 24V
Technology: Hall Effect
Sensing Range: 20mT Trip, -20mT Release
Current - Output (Max): 100mA
Current - Supply (Max): 8mA
Supplier Device Package: PG-SSO-3-2
Test Condition: 25°C
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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IPD50P03P4L11ATMA2 IPD50P03P4L11ATMA2 Infineon Technologies Infineon-IPD50P03P4L-11-DataSheet-v01_02-EN.pdf?fileId=db3a30431ddc9372011e07ebbe0127e8 Description: MOSFET P-CH 30V 50A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 50A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
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2500+0.84 EUR
5000+0.79 EUR
7500+0.76 EUR
12500+0.73 EUR
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IPD50P03P4L11ATMA2 IPD50P03P4L11ATMA2 Infineon Technologies Infineon-IPD50P03P4L-11-DataSheet-v01_02-EN.pdf?fileId=db3a30431ddc9372011e07ebbe0127e8 Description: MOSFET P-CH 30V 50A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 50A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
Qualification: AEC-Q101
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100+1.32 EUR
500+1.04 EUR
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TLI49655MXTSA1 TLI49655MXTSA1 Infineon Technologies Infineon-TLI4965-5M-DS-v01_00-EN.pdf?fileId=5546d462525dbac4015287edf0c127d3 Description: MAGNETIC SWITCH UNIPOLAR SOT23-3
Qualification: AEC-Q100
Grade: Automotive
Test Condition: 25°C
Supplier Device Package: PG-SOT23-3
Current - Supply (Max): 2.5mA
Current - Output (Max): 5mA
Sensing Range: 10.4mT Trip, 2.8mT Release
Technology: Hall Effect
Voltage - Supply: 3V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Function: Unipolar Switch
Mounting Type: Surface Mount
Polarization: South Pole
Output Type: Open Drain
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
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29+0.74 EUR
33+0.64 EUR
35+0.61 EUR
38+0.56 EUR
50+0.52 EUR
100+0.5 EUR
500+0.45 EUR
1000+0.43 EUR
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IRF5804 IRF5804 Infineon Technologies irf5804.pdf Description: MOSFET P-CH 40V 2.5A MICRO6
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: Micro6™(TSOP-6)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 198mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Produkt ist nicht verfügbar
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BGM15HA12E6327XTSA1 BGM15HA12E6327XTSA1 Infineon Technologies BGM15HA12.pdf Description: IC AMP LTE 2.3GHZ-2.7GHZ 12ATSLP
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BGM15HA12E6327XTSA1 BGM15HA12E6327XTSA1 Infineon Technologies BGM15HA12.pdf Description: IC AMP LTE 2.3GHZ-2.7GHZ 12ATSLP
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IPD046N08N5ATMA1 IPD046N08N5ATMA1 Infineon Technologies Infineon-IPD046N08N5-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b6137129a66ed Description: MOSFET N-CH 80V 90A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.8V @ 65µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 45A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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IPD046N08N5ATMA1 IPD046N08N5ATMA1 Infineon Technologies Infineon-IPD046N08N5-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b6137129a66ed Description: MOSFET N-CH 80V 90A TO252-3
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 45A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.8V @ 65µA
auf Bestellung 1649 Stücke:
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4+5.84 EUR
10+3.8 EUR
100+2.64 EUR
500+2.25 EUR
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TLE42754EXUMA2 TLE42754EXUMA2 Infineon Technologies Infineon-TLE42754-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc101595f8e99a01fab Description: IC REG LIN 5V 450MA PG-SSOP-14-2
Packaging: Bulk
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 450mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-SSOP-14-2
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
Part Status: Obsolete
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 25 mA
Qualification: AEC-Q100
auf Bestellung 21424 Stücke:
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205+2.68 EUR
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BCX69-16E6327 BCX69-16E6327 Infineon Technologies INFNS12739-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89-4-2
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
Produkt ist nicht verfügbar
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BCX6916E6327 BCX6916E6327 Infineon Technologies INFNS12739-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89-4-2
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
auf Bestellung 6000 Stücke:
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2812+0.23 EUR
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BCX69-25E6327HTSA1 BCX69-25E6327HTSA1 Infineon Technologies INFNS17363-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 20V 1A SOT89
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
auf Bestellung 5000 Stücke:
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2251+0.27 EUR
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SPS03N60C3AKMA1 SPS03N60C3AKMA1.pdf
SPS03N60C3AKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 3.2A TO251-3-11
Packaging: Bulk
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO251-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
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AnzahlPrivatkunde
454+1.21 EUR
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IKD03N60RFATMA1 Infineon-IKD03N60RF-DS-v02_06-EN.pdf?fileId=db3a30433c5c92fb013c5d3978350068
IKD03N60RFATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH/FS 600V 6.5A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 31 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 2.5A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 10ns/128ns
Switching Energy: 50µJ (on), 40µJ (off)
Test Condition: 400V, 2.5A, 68Ohm, 15V
Gate Charge: 17.1 nC
Part Status: Active
Current - Collector (Ic) (Max): 6.5 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 7.5 A
Power - Max: 53.6 W
auf Bestellung 15 Stücke:
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AnzahlPrivatkunde
8+2.98 EUR
12+1.87 EUR
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ILB03N60 INFNS07533-1.pdf?t.download=true&u=5oefqw
ILB03N60
Hersteller: Infineon Technologies
Description: IGBT, 4.5A, 600V, N-CHANNEL
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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ILP03N60 INFNS07428-1.pdf?t.download=true&u=5oefqw
ILP03N60
Hersteller: Infineon Technologies
Description: IGBT, 4.5A, 600V, N-CHANNEL
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Input Type: Standard
Reverse Recovery Time (trr): 250 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 10V, 3A
Supplier Device Package: PG-TO220-3-1
Td (on/off) @ 25°C: 15ns/100ns
Switching Energy: 12µJ (on), 20µJ (off)
Test Condition: 400V, 0.8A, 60Ohm, 10V
Gate Charge: 8.5 nC
Part Status: Active
Current - Collector (Ic) (Max): 4.5 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 5.5 A
Power - Max: 27 W
Produkt ist nicht verfügbar
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SPD03N60C3 Infineon-SPD03N60C3-DS-v02_06-NA.pdf?fileId=db3a3043191a246301192907f3b27f4b
SPD03N60C3
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 3.2A TO252
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TO252-3-313
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Power Dissipation (Max): 38W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Produkt ist nicht verfügbar
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IDL04G65C5XUMA2 Infineon-IDL04G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0143000fb94c146a
IDL04G65C5XUMA2
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 4A PGVSON4
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: PG-VSON-4
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 70 µA @ 650 V
auf Bestellung 3000 Stücke:
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AnzahlPrivatkunde
3000+1.5 EUR
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IDL04G65C5XUMA2 Infineon-IDL04G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0143000fb94c146a
IDL04G65C5XUMA2
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 4A PGVSON4
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: PG-VSON-4
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 70 µA @ 650 V
auf Bestellung 3591 Stücke:
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AnzahlPrivatkunde
5+5.15 EUR
10+3.32 EUR
100+2.27 EUR
500+1.83 EUR
1000+1.69 EUR
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IM818SCCXKMA1 Infineon-IM818-SCC-DS-v02_01-EN.pdf?fileId=5546d46265f064ff0165f9e925ca2ea1
IM818SCCXKMA1
Hersteller: Infineon Technologies
Description: CIPOS MAXI 1200V 8A 24PWRDIP
Voltage: 1.2 kV
Current: 8 A
Voltage - Isolation: 2500Vrms
Configuration: 3 Phase Inverter
Type: IGBT
Mounting Type: Through Hole
Package / Case: 24-PowerDIP Module (1.205", 30.60mm)
Packaging: Tube
auf Bestellung 206 Stücke:
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AnzahlPrivatkunde
1+51.86 EUR
14+41.59 EUR
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IRF100P219AKMA1 Infineon-IRF100P219-DataSheet-v02_01-EN.pdf?fileId=5546d462602a9dc80160e20d52df4b86
IRF100P219AKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 203A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 278µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12020 pF @ 50 V
auf Bestellung 404 Stücke:
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AnzahlPrivatkunde
3+9.73 EUR
25+5.65 EUR
100+4.68 EUR
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IRF100P218AKMA1 Infineon-IRF100P218-DataSheet-v02_01-EN.pdf?fileId=5546d462602a9dc80160e20d3eca4b83
IRF100P218AKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 209A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 209A (Tc)
Rds On (Max) @ Id, Vgs: 1.28mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 556W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 278µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 412 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24000 pF @ 50 V
auf Bestellung 969 Stücke:
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AnzahlPrivatkunde
2+14.99 EUR
25+8.9 EUR
100+7.45 EUR
500+6.3 EUR
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FP150R07N3E4 INFNS28449-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: FP150R07 - IGBT MODULE
Produkt ist nicht verfügbar
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FP150R07N3E4_B11 INFNS28450-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: FP150R07 - IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 430 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V
auf Bestellung 116 Stücke:
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AnzahlPrivatkunde
2+363.43 EUR
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ESD201-B2-03LRHE6327 INFN-S-A0000325460-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: TRANS VOLTAGE SUPPRESSOR DIODE
Packaging: Bulk
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-TSLP-3
Bidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 12.1V (Typ), 10.2V (Typ)
Power Line Protection: No
Part Status: Active
auf Bestellung 534811 Stücke:
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AnzahlPrivatkunde
5189+0.12 EUR
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STT1400N18P55XPSA1 Infineon-STT1400N18P55-DataSheet-v03_01-EN.pdf?fileId=5546d46272aa54c00172bc99a9775672
Hersteller: Infineon Technologies
Description: THYR / DIODE MODULE DK
auf Bestellung 5 Stücke:
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65DN06B02ELEMXPSA1 Infineon-65DN06B02-DataSheet-v03_01-EN.pdf?fileId=5546d4627506bb320175079ef4d40391
65DN06B02ELEMXPSA1
Hersteller: Infineon Technologies
Description: DIODE STD 600V 15130A BGDELEM1
Packaging: Tray
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15130A
Supplier Device Package: BG-D-ELEM-1
Operating Temperature - Junction: 180°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 8000 A
Current - Reverse Leakage @ Vr: 100 mA @ 600 V
auf Bestellung 19 Stücke:
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AnzahlPrivatkunde
1+879.79 EUR
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STT1900N18P55XPSA1 Infineon-STT1900N18P55-DataSheet-v01_00-EN.pdf?fileId=5546d46272aa54c00172bc999c30566f
Hersteller: Infineon Technologies
Description: THYR / DIODE MODULE DK
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T700N22TOFXPSA1 Infineon-T700N-DataSheet-v03_01-EN.pdf?fileId=5546d4627112d9d501712b084825402e
Hersteller: Infineon Technologies
Description: T700N22 - PHASE CONTROL THYRISTO
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T300N14TOFXPSA1 Infineon-T300N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd80128a5a8d27c0053
Hersteller: Infineon Technologies
Description: SCR MODULE 1800V 400A DO200AA
Produkt ist nicht verfügbar
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T300N16TOFXPSA1 Infineon-T300N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd80128a5a8d27c0053
Hersteller: Infineon Technologies
Description: SCR MODULE 1800V 400A DO200AA
Produkt ist nicht verfügbar
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T430N16TOFXPSA1 Infineon-T430N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd801286374f6a45325
Hersteller: Infineon Technologies
Description: SCR MODULE 1800V 700A DO200AA
Produkt ist nicht verfügbar
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T660N22TOFXPSA1 Infineon-T660N-DataSheet-v01_00-EN.pdf?fileId=5546d4627112d9d501712afaeacd3fe7
Hersteller: Infineon Technologies
Description: SCR MODULE 2600V 1500A DO200AB
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T660N26TOFXPSA1 Infineon-T660N-DataSheet-v01_00-EN.pdf?fileId=5546d4627112d9d501712afaeacd3fe7
Hersteller: Infineon Technologies
Description: SCR MODULE 2600V 1500A DO200AB
Produkt ist nicht verfügbar
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MB95F696KNPMC-G-SNERE2 Prod_Selector_Guide_11-25-15.pdf
MB95F696KNPMC-G-SNERE2
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 36KB FLASH 48LQFP
RAM Size: 1K x 8
Program Memory Size: 36KB (36K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Number of I/O: 45
Supplier Device Package: 48-LQFP (7x7)
Peripherals: LVD, POR, PWM, WDT
Connectivity: I2C, LINbus, SIO, UART/USART
Voltage - Supply (Vcc/Vdd): 2.88V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 12x8/10b
Core Processor: F²MC-8FX
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
auf Bestellung 13500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+0.76 EUR
3000+0.73 EUR
4500+0.71 EUR
7500+0.69 EUR
10500+0.68 EUR
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MB95F696KNPMC-G-SNERE2 Prod_Selector_Guide_11-25-15.pdf
MB95F696KNPMC-G-SNERE2
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 36KB FLASH 48LQFP
DigiKey Programmable: Not Verified
Number of I/O: 45
Supplier Device Package: 48-LQFP (7x7)
Peripherals: LVD, POR, PWM, WDT
Connectivity: I2C, LINbus, SIO, UART/USART
Voltage - Supply (Vcc/Vdd): 2.88V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 12x8/10b
Core Processor: F²MC-8FX
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 1K x 8
Program Memory Size: 36KB (36K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Cut Tape (CT)
auf Bestellung 1084 Stücke:
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AnzahlPrivatkunde
16+1.32 EUR
19+1.12 EUR
25+1.05 EUR
100+0.93 EUR
250+0.87 EUR
500+0.82 EUR
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41040324AWLXPSA1
Hersteller: Infineon Technologies
Description: DIODE THYRISTOR
Produkt ist nicht verfügbar
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BSO330N02KG INFNS27921-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Part Status: Active
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 1.2V @ 20µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 4.5V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.4W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
auf Bestellung 1422 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1422+0.52 EUR
Mindestbestellmenge: 1422 Stücke
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IPP042N03LG INFNS16316-1.pdf?t.download=true&u=5oefqw
IPP042N03LG
Hersteller: Infineon Technologies
Description: IPP042N03 - 12V-300V N-CHANNEL P
auf Bestellung 71180 Stücke:
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BSC042N03LSG INFNS27447-1.pdf?t.download=true&u=5oefqw
BSC042N03LSG
Hersteller: Infineon Technologies
Description: BSC042N03 - 12V-300V N-CHANNEL P
Produkt ist nicht verfügbar
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IAUZ30N10S5L240ATMA1 Infineon-IAUZ30N10S5L240-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c8a62a9610dd8
IAUZ30N10S5L240ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 30A 8TSDSON-32
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 15A, 10V
Power Dissipation (Max): 45.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 15µA
Supplier Device Package: PG-TSDSON-8-32
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 832 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1345 Stücke:
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AnzahlPrivatkunde
9+2.56 EUR
14+1.61 EUR
100+1.06 EUR
500+0.83 EUR
1000+0.75 EUR
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FP50R07U1E4BPSA1 FP50R07U1E4.pdf
FP50R07U1E4BPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 650V 75A 230W MODULE
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 230 W
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 75 A
Part Status: Obsolete
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 50A
Operating Temperature: -40°C ~ 150°C
Configuration: Three Phase Inverter
auf Bestellung 231 Stücke:
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AnzahlPrivatkunde
5+110.12 EUR
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FF150R17ME3GBOSA1 Infineon-FF150R17ME3G-DS-v02_01-en_de.pdf?fileId=db3a30431441fb5d0114502cbb65039c
FF150R17ME3GBOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 240A 1050W
Input Capacitance (Cies) @ Vce: 13.5 nF @ 25 V
Current - Collector Cutoff (Max): 3 mA
Power - Max: 1050 W
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 240 A
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 150A
Operating Temperature: -40°C ~ 125°C
Configuration: 2 Independent
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
auf Bestellung 866 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+245.62 EUR
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FD150R12RT4HOSA1 Infineon-FD150R12RT4-DS-v02_03-en_de.pdf?fileId=db3a3043271faefd01279a5e45e041b2
FD150R12RT4HOSA1
Hersteller: Infineon Technologies
Description: FD150R12 - IGBT MODULE
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AnzahlPrivatkunde
6+106.66 EUR
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DF150R12RT4HOSA1 Infineon-DF150R12RT4-DS-v02_02-en_de.pdf?fileId=db3a304327b89750012805d5d8646118
DF150R12RT4HOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 150A 790W MOD
Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 790 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 150 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
Operating Temperature: -40°C ~ 150°C
Configuration: Single Chopper
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
auf Bestellung 3416 Stücke:
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3+194.56 EUR
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FS50R12KT4B11BOSA1 Infineon-FS50R12KT4_B11-DS-v03_00-en_de.pdf?fileId=db3a30431a47d73d011a49630da90121
FS50R12KT4B11BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 50A 280W MOD
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 280 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
Operating Temperature: -40°C ~ 150°C
Configuration: Full Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
auf Bestellung 83 Stücke:
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4+146.17 EUR
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DF650R17IE4BOSA1 Infineon-DF650R17IE4-DS-v02_02-en_de.pdf?fileId=db3a30431ff9881501201f1e5a664bbc
DF650R17IE4BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 930A 4150W
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 4150 W
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 930 A
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 650A
Operating Temperature: -40°C ~ 150°C
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
auf Bestellung 249 Stücke:
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1+638.6 EUR
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FS50R07N2E4B11BOSA1 FS50R07N2E4_B11.pdf
FS50R07N2E4B11BOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 650V 70A 190W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Obsolete
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 190 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
auf Bestellung 280 Stücke:
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6+104.68 EUR
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FP50R12KT4B16BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 100A 280W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 280 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
auf Bestellung 11 Stücke:
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3+174.05 EUR
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FF1000R17IE4DB2S4BOSA2
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 1390A AG-PRIME3-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1000A
NTC Thermistor: Yes
Supplier Device Package: AG-PRIME3-1
Current - Collector (Ic) (Max): 1390 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 6250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 81 nF @ 25 V
Produkt ist nicht verfügbar
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BSZ033NE2LS5ATMA1 Infineon-BSZ033NE2LS5-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014f1820c4931820
BSZ033NE2LS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 18A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 12 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.68 EUR
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BSZ033NE2LS5ATMA1 Infineon-BSZ033NE2LS5-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014f1820c4931820
BSZ033NE2LS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 18A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 12 V
auf Bestellung 8435 Stücke:
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AnzahlPrivatkunde
8+2.68 EUR
13+1.7 EUR
100+1.13 EUR
500+0.89 EUR
1000+0.81 EUR
2000+0.75 EUR
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CYBLE-222005-EVAL Infineon-CYBLE-222005-EVAL_EZ-BLE_PROC_EVALUATION_BOARD-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0efab8ef10a2&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CYBLE-222005-EVAL
Hersteller: Infineon Technologies
Description: DEVELOPMENT KIT CYBLE-222005
Packaging: Box
For Use With/Related Products: CYBLE-222005-00
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® Smart 4.x Low Energy (BLE)
Supplied Contents: Board(s)
Part Status: Obsolete
auf Bestellung 57 Stücke:
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2+17.28 EUR
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PSB 50510 E V1.3-G
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE 256-LBGA
Produkt ist nicht verfügbar
Mindestbestellmenge: 90 Stücke
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IPD50R800CEAUMA1 Infineon-IPD50R800CE-DS-v02_03-EN.pdf?fileId=db3a304339d29c450139d424706c02c2
IPD50R800CEAUMA1
Hersteller: Infineon Technologies
Description: CONSUMER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 1.5A, 13V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: PG-TO252-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
auf Bestellung 2500 Stücke:
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AnzahlPrivatkunde
2500+0.54 EUR
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IPD50R800CEAUMA1 Infineon-IPD50R800CE-DS-v02_03-EN.pdf?fileId=db3a304339d29c450139d424706c02c2
IPD50R800CEAUMA1
Hersteller: Infineon Technologies
Description: CONSUMER
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 1.5A, 13V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: PG-TO252-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
auf Bestellung 5199 Stücke:
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AnzahlPrivatkunde
15+1.43 EUR
17+1.24 EUR
100+0.86 EUR
500+0.71 EUR
1000+0.61 EUR
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IPD50R2K0CE Part_Number_Guide_Web.pdf
IPD50R2K0CE
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET CE
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IPD50R800CE INFN-S-A0002220638-1.pdf?t.download=true&u=5oefqw
IPD50R800CE
Hersteller: Infineon Technologies
Description: IPD50R800 - 500V COOLMOS N-CHANN
Produkt ist nicht verfügbar
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IPD50R500CE INFN-S-A0001300081-1.pdf?t.download=true&u=5oefqw
IPD50R500CE
Hersteller: Infineon Technologies
Description: IPD50R500 - 500V COOLMOS N-CHANN
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 2.3A, 13V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO252-3-344
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 433 pF @ 100 V
auf Bestellung 116541 Stücke:
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AnzahlPrivatkunde
792+0.75 EUR
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TLE4935LHALA1 Infineon-TLE49X5L-DataSheet-v01_05-en.pdf?fileId=db3a304316f66ee80117549ac8b206b1
TLE4935LHALA1
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH LATCH SSO-3-2
Features: Temperature Compensated
Packaging: Tape & Box (TB)
Package / Case: 3-SSIP, SSO-3-02
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Through Hole
Function: Latch
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3.8V ~ 24V
Technology: Hall Effect
Sensing Range: 20mT Trip, -20mT Release
Current - Output (Max): 100mA
Current - Supply (Max): 8mA
Supplier Device Package: PG-SSO-3-2
Test Condition: 25°C
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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IPD50P03P4L11ATMA2 Infineon-IPD50P03P4L-11-DataSheet-v01_02-EN.pdf?fileId=db3a30431ddc9372011e07ebbe0127e8
IPD50P03P4L11ATMA2
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 50A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 50A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.84 EUR
5000+0.79 EUR
7500+0.76 EUR
12500+0.73 EUR
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IPD50P03P4L11ATMA2 Infineon-IPD50P03P4L-11-DataSheet-v01_02-EN.pdf?fileId=db3a30431ddc9372011e07ebbe0127e8
IPD50P03P4L11ATMA2
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 50A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 50A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 17847 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.12 EUR
11+1.98 EUR
100+1.32 EUR
500+1.04 EUR
1000+0.95 EUR
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TLI49655MXTSA1 Infineon-TLI4965-5M-DS-v01_00-EN.pdf?fileId=5546d462525dbac4015287edf0c127d3
TLI49655MXTSA1
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH UNIPOLAR SOT23-3
Qualification: AEC-Q100
Grade: Automotive
Test Condition: 25°C
Supplier Device Package: PG-SOT23-3
Current - Supply (Max): 2.5mA
Current - Output (Max): 5mA
Sensing Range: 10.4mT Trip, 2.8mT Release
Technology: Hall Effect
Voltage - Supply: 3V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Function: Unipolar Switch
Mounting Type: Surface Mount
Polarization: South Pole
Output Type: Open Drain
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
auf Bestellung 2520 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
29+0.74 EUR
33+0.64 EUR
35+0.61 EUR
38+0.56 EUR
50+0.52 EUR
100+0.5 EUR
500+0.45 EUR
1000+0.43 EUR
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IRF5804 irf5804.pdf
IRF5804
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 2.5A MICRO6
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: Micro6™(TSOP-6)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 198mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Produkt ist nicht verfügbar
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BGM15HA12E6327XTSA1 BGM15HA12.pdf
BGM15HA12E6327XTSA1
Hersteller: Infineon Technologies
Description: IC AMP LTE 2.3GHZ-2.7GHZ 12ATSLP
Produkt ist nicht verfügbar
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BGM15HA12E6327XTSA1 BGM15HA12.pdf
BGM15HA12E6327XTSA1
Hersteller: Infineon Technologies
Description: IC AMP LTE 2.3GHZ-2.7GHZ 12ATSLP
Produkt ist nicht verfügbar
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IPD046N08N5ATMA1 Infineon-IPD046N08N5-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b6137129a66ed
IPD046N08N5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 90A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.8V @ 65µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 45A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPD046N08N5ATMA1 Infineon-IPD046N08N5-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b6137129a66ed
IPD046N08N5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 90A TO252-3
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 45A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.8V @ 65µA
auf Bestellung 1649 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.84 EUR
10+3.8 EUR
100+2.64 EUR
500+2.25 EUR
Mindestbestellmenge: 4 Stücke
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TLE42754EXUMA2 Infineon-TLE42754-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc101595f8e99a01fab
TLE42754EXUMA2
Hersteller: Infineon Technologies
Description: IC REG LIN 5V 450MA PG-SSOP-14-2
Packaging: Bulk
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 450mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-SSOP-14-2
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
Part Status: Obsolete
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 25 mA
Qualification: AEC-Q100
auf Bestellung 21424 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
205+2.68 EUR
Mindestbestellmenge: 205 Stücke
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BCX69-16E6327 INFNS12739-1.pdf?t.download=true&u=5oefqw
BCX69-16E6327
Hersteller: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89-4-2
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
Produkt ist nicht verfügbar
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BCX6916E6327 INFNS12739-1.pdf?t.download=true&u=5oefqw
BCX6916E6327
Hersteller: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89-4-2
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2812+0.23 EUR
Mindestbestellmenge: 2812 Stücke
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BCX69-25E6327HTSA1 INFNS17363-1.pdf?t.download=true&u=5oefqw
BCX69-25E6327HTSA1
Hersteller: Infineon Technologies
Description: TRANS PNP 20V 1A SOT89
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2251+0.27 EUR
Mindestbestellmenge: 2251 Stücke
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