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IPA50R299CPXKSA1079 Infineon Technologies INFNS15798-1.pdf?t.download=true&u=5oefqw Description: IPA50R299 - 500V COOLMOS N-CHANN
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO220-3-31
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V
Produkt ist nicht verfügbar
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IPA50R299CP Infineon Technologies INFNS15798-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO220-3-31
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V
Produkt ist nicht verfügbar
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FS150R12KT4PBPSA1 FS150R12KT4PBPSA1 Infineon Technologies Description: IGBT MODULE LOW PWR ECONO3-4
Packaging: Bulk
auf Bestellung 104 Stücke:
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FS150R12PT4 Infineon Technologies INFNS28534-1.pdf?t.download=true&u=5oefqw Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO4-1-1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 680 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9.35 nF @ 25 V
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FS150R17KE3GBOSA1 FS150R17KE3GBOSA1 Infineon Technologies Infineon-FS150R17KE3G-DS-v02_01-en_de.pdf?fileId=db3a304412b407950112b42fea3c4e48 Description: IGBT MOD 1700V 240A 1050W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1050 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 13.5 nF @ 25 V
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FS150R17KE3G Infineon Technologies INFNS28151-1.pdf?t.download=true&u=5oefqw Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1050 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 13.5 nF @ 25 V
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FS150R07N3E4 Infineon Technologies INFNS28524-1.pdf?t.download=true&u=5oefqw Description: FS150R07 - IGBT MODULE
Produkt ist nicht verfügbar
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FS150R06KL4B4BDLA1 FS150R06KL4B4BDLA1 Infineon Technologies Description: MOD IGBT 2 LOW POWER ECONO3-1
Packaging: Tray
Produkt ist nicht verfügbar
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FS100R07N3E4_B11 Infineon Technologies INFNS28507-1.pdf?t.download=true&u=5oefqw Description: IGBT, 100A, 650V, N-CHANNEL
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 335 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.2 nF @ 25 V
auf Bestellung 92 Stücke:
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3+167.23 EUR
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FS100R12KT4PB15BPSA1 Infineon Technologies Infineon-FS100R12KT4G-DS-v02_00-en_de.pdf?fileId=db3a3043156fd5730116190dc0431c81 Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: AG-ECONO3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 515 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
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3+189.62 EUR
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FS100R07N2E4_B11 Infineon Technologies INFN-S-A0003209908-1.pdf?t.download=true&u=5oefqw Description: FS100R07 - IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 125 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.2 nF @ 25 V
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4+140.15 EUR
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FS100R07PE4BOSA1 FS100R07PE4BOSA1 Infineon Technologies Infineon-FS100R07PE4-DS-v02_00-en_de.pdf?fileId=db3a304333227b5e013359531e9908c6 Description: IGBT MOD 650V 100A 335W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 335 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.2 nF @ 25 V
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3+199.18 EUR
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FS100R12PT4 Infineon Technologies INFNS28515-1.pdf?t.download=true&u=5oefqw Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO4-1-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 135 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
auf Bestellung 1361 Stücke:
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FS100R12KT4PBPSA1 Infineon Technologies Description: IGBT MODULE LOW PWR ECONO2-6
Packaging: Bulk
auf Bestellung 178 Stücke:
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FS100R17PE4BOSA1 FS100R17PE4BOSA1 Infineon Technologies Infineon-FS100R17PE4-DS-v02_01-en_de.pdf?fileId=db3a3043243b5f170124d89c3e2d7380 Description: IGBT MOD 1700V 100A 600W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
auf Bestellung 243 Stücke:
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3+205.22 EUR
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FS100R07N2E4B11BOSA1 FS100R07N2E4B11BOSA1 Infineon Technologies Infineon-FS100R07N2E4_B11-DS-v03_00-EN.pdf?fileId=db3a30433004641301304036f2a4573e Description: IGBT MOD 650V 125A 20MW
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 125 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.2 nF @ 25 V
Produkt ist nicht verfügbar
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FS100R17PE4BOSA1 FS100R17PE4BOSA1 Infineon Technologies Infineon-FS100R17PE4-DS-v02_01-en_de.pdf?fileId=db3a3043243b5f170124d89c3e2d7380 Description: IGBT MOD 1700V 100A 600W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
Produkt ist nicht verfügbar
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FS100R17KS4F FS100R17KS4F Infineon Technologies Description: IGBT MOD 1700V 100A 960W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 4.7V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 960 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 7 nF @ 25 V
Produkt ist nicht verfügbar
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IRF40H233XTMA1 IRF40H233XTMA1 Infineon Technologies Infineon-IRF40H233-DS-v01_00-EN.pdf?fileId=5546d462689a790c0168a1d5500962d9 Description: MOSFET 2N-CH 40V 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Supplier Device Package: PG-TDSON-8-900
Part Status: Obsolete
Produkt ist nicht verfügbar
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IRF40H233ATMA1 Infineon Technologies Description: MOSFET 2N-CH 40V 65A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.8W (Ta), 50W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 20V
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 35A, 10V
Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 50µA
Supplier Device Package: PG-TDSON-8-4
Produkt ist nicht verfügbar
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BSM300GB120DLCHOSA1 Infineon Technologies Description: IGBT MOD 1200V 625A 2500W
Produkt ist nicht verfügbar
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BTS409L1E3062A BTS409L1E3062A Infineon Technologies INFNS30248-1.pdf?t.download=true&u=5oefqw Description: AUTOMOTIVE SMART HIGH SIDE SWITC
Features: Auto Restart, Slew Rate Controlled
Packaging: Bulk
Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 160mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-5-2
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Reverse Current, Short Circuit
Part Status: Active
Produkt ist nicht verfügbar
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SIGC10T60EX1SA5 SIGC10T60EX1SA5 Infineon Technologies Infineon-SIGC10T60E-DS-v02_02-EN.pdf?fileId=db3a30433b47825b013b843ba8c832bb Description: IGBT CHIP
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
Supplier Device Package: Die
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Produkt ist nicht verfügbar
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SIGC10T60EX7SA3 Infineon Technologies Infineon-SIGC10T60E-DS-v02_02-EN.pdf?fileId=db3a30433b47825b013b843ba8c832bb Description: IGBT 3 CHIP 600V 20A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
Supplier Device Package: Die
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Produkt ist nicht verfügbar
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SIGC10T60EX1SA3 Infineon Technologies Infineon-SIGC10T60E-DS-v02_02-EN.pdf?fileId=db3a30433b47825b013b843ba8c832bb Description: IGBT 3 CHIP 600V 20A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
Supplier Device Package: Die
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Produkt ist nicht verfügbar
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SIGC10T60EX7SA1 Infineon Technologies Infineon-SIGC10T60E-DS-v02_02-EN.pdf?fileId=db3a30433b47825b013b843ba8c832bb Description: IGBT 3 CHIP 600V 20A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
Supplier Device Package: Die
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Produkt ist nicht verfügbar
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IKW50N65RH5XKSA1 IKW50N65RH5XKSA1 Infineon Technologies Infineon-IKW50N65RH5-DataSheet-v02_01-EN.pdf?fileId=5546d46275b79adb0175dc27f90f31a6 Description: IGBT TRENCH FS 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/180ns
Switching Energy: 230µJ (on), 180µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 305 W
auf Bestellung 280 Stücke:
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2+12.28 EUR
30+7.10 EUR
120+5.96 EUR
Mindestbestellmenge: 2
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IKW50N65SS5XKSA1 IKW50N65SS5XKSA1 Infineon Technologies Infineon-IKW50N65SS5-DataSheet-v02_01-EN.pdf?fileId=5546d46275b79adb0175dc280a0e31a9 Description: IGBT TRENCH FS 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/140ns
Switching Energy: 320µJ (on), 550µJ (off)
Test Condition: 400V, 50A, 9Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 274 W
auf Bestellung 116 Stücke:
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2+16.58 EUR
30+9.83 EUR
Mindestbestellmenge: 2
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TLE42642GHTMA1 TLE42642GHTMA1 Infineon Technologies Infineon-TLE4264-2G-DataSheet-v02_71-EN.pdf?fileId=5546d46258fc0bc101595f6960991f2d Description: IC REG LIN 5V 150MA PG-SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 70 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 68dB (100Hz)
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 4 mA
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE42794GXUMA1 TLE42794GXUMA1 Infineon Technologies Infineon-TLE42794-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc101595f8e494d1f80 Description: IC REG LIN FIXED POS LDO REG 5V
auf Bestellung 87000 Stücke:
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TLE42794GXUMA2 TLE42794GXUMA2 Infineon Technologies Infineon-TLE42794-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc101595f8e494d1f80 Description: IC REG LINEAR 5V 100MA 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 280 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Part Status: Active
PSRR: 70dB (100Hz)
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 8 mA
Grade: Automotive
Qualification: AEC-Q100
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TLE42794GXUMA2 TLE42794GXUMA2 Infineon Technologies Infineon-TLE42794-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc101595f8e494d1f80 Description: IC REG LINEAR 5V 100MA 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 280 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Part Status: Active
PSRR: 70dB (100Hz)
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 8 mA
Grade: Automotive
Qualification: AEC-Q100
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11+1.71 EUR
25+1.55 EUR
100+1.37 EUR
250+1.29 EUR
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TC267D40F200SBBKXUMA1 TC267D40F200SBBKXUMA1 Infineon Technologies Infineon-TC26xBC-DS-v01_00-EN.pdf?fileId=5546d462694c98b40169538e06030445 Description: IC MCU 32BIT 2.5MB FLSH 292LFBGA
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IM231L6S1BAUMA1 Infineon Technologies Infineon-IM231-L6S1B_T2B-DataSheet-v02_01-EN.pdf?fileId=5546d462689a790c0169067334d10ef3 Description: CIPOS MICRO
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IM231L6S1BAUMA1 Infineon Technologies Infineon-IM231-L6S1B_T2B-DataSheet-v02_01-EN.pdf?fileId=5546d462689a790c0169067334d10ef3 Description: CIPOS MICRO
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IM231M6S1BAUMA1 Infineon Technologies Infineon-IM231-M6S1B_T2B-DataSheet-v02_01-EN.pdf?fileId=5546d462689a790c0169067346a60ef9 Description: CIPOS MICRO
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IGCM10F60HAXKMA1 IGCM10F60HAXKMA1 Infineon Technologies IGCM10F60HA.pdf Description: IGBT 600V 10A 24PWRDIP MOD
Packaging: Bulk
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 10 A
Voltage: 600 V
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IRS26320JTRPBF Infineon Technologies IRS26320JPbF_Factsheet.pdf Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 12V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
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TLE82422LXUMA2 TLE82422LXUMA2 Infineon Technologies Infineon-TLE8242_2-DS-v01_00-en.pdf?fileId=db3a3043271faefd012743c4b3380fdd Description: IC CURRENT SOURCE 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Sensing Method: Low-Side
Mounting Type: Surface Mount
Function: Current Source
Voltage - Input: 5.5V ~ 42V
Operating Temperature: -40°C ~ 150°C
Supplier Device Package: PG-LQFP-64-4
Part Status: Active
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BSP88E6327 BSP88E6327 Infineon Technologies BSP88.pdf Description: MOSFET N-CH 240V 350MA SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 350mA, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 108µA
Supplier Device Package: PG-SOT223-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 4.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 95 pF @ 25 V
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TT500N16KOFS01HPSA1 Infineon Technologies Description: DIODE BG-PB60-1
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CY7C1350G-200AXI CY7C1350G-200AXI Infineon Technologies Infineon-CY7C1350G_4-Mbit_(128_K_36)_Pipelined_SRAM_with_NoBL_Architecture-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec1032c35ab Description: IC SRAM 4.5MBIT PAR 100TQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 2.8 ns
Memory Organization: 128K x 36
DigiKey Programmable: Not Verified
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IRFI4212H-117PXKMA1 IRFI4212H-117PXKMA1 Infineon Technologies irfi4212h-117p.pdf?fileId=5546d462533600a401535623fc841f7a Description: MOSFET 2N-CH 100V 11A TO220-5
Packaging: Tube
Package / Case: TO-220-5 Full Pack, Formed Leads
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 18W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 50V
Rds On (Max) @ Id, Vgs: 72.5mOhm @ 6.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-5 Full-Pak
Part Status: Active
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EVAL2EDL23I06PJTOBO1 EVAL2EDL23I06PJTOBO1 Infineon Technologies Infineon-2EDL23I06PJ_EVAL-ApplicationNotes-v01_00-EN.pdf?fileId=5546d46145f1f3a401461dcd1de41bd5 Description: EVAL BOARD FOR 2EDL23I06-PJ
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Utilized IC / Part: 2EDL23I06-PJ
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
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IPI80N04S3-06 IPI80N04S3-06 Infineon Technologies INFNS10782-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
auf Bestellung 1000 Stücke:
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670+0.73 EUR
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IPI80N04S3-03 IPI80N04S3-03 Infineon Technologies INFNS10911-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL AUTOMOTIVE MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V
auf Bestellung 8000 Stücke:
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248+2.02 EUR
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IPI80N04S404AKSA1 IPI80N04S404AKSA1 Infineon Technologies Infineon-IPP_B_I80N04S4_04-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c71d4085dfa&ack=t Description: MOSFET N-CH 40V 80A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 80A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TO262-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 25 V
Qualification: AEC-Q101
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IPB80N04S2-H4 Infineon Technologies INFNS11807-1.pdf?t.download=true&u=5oefqw Description: IPB80N04 - 20V-40V N-CHANNEL AUT
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 148 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
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IPI80N04S3-04 Infineon Technologies INFNS10666-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Produkt ist nicht verfügbar
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BSC050N10NS5ATMA1 BSC050N10NS5ATMA1 Infineon Technologies Infineon-BSC050N10NS5-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0164366daea34f7d Description: MOSFET N-CH 100V 16A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 72µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 50 V
auf Bestellung 5000 Stücke:
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5000+1.21 EUR
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BSC050N10NS5ATMA1 BSC050N10NS5ATMA1 Infineon Technologies Infineon-BSC050N10NS5-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0164366daea34f7d Description: MOSFET N-CH 100V 16A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 72µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 50 V
auf Bestellung 5108 Stücke:
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6+2.96 EUR
10+1.99 EUR
100+1.64 EUR
500+1.45 EUR
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IPA60R380C6 Infineon Technologies INFN-S-A0004583381-1.pdf?t.download=true&u=5oefqw Description: 600V COOLMOS POWER TRANSISTOR
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
Produkt ist nicht verfügbar
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BBY5102VH6327XTSA1 BBY5102VH6327XTSA1 Infineon Technologies bby51series.pdf Description: DIODE TUNING 2SC79
Packaging: Bulk
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 3.7pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C4
Supplier Device Package: PG-SC79-2-1
Part Status: Obsolete
Voltage - Peak Reverse (Max): 7 V
Capacitance Ratio: 2.2
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2420+0.20 EUR
Mindestbestellmenge: 2420
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IRF6610TR1 IRF6610TR1 Infineon Technologies description Description: MOSFET N-CH 20V 15A DIRECTFET
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IPL60R060CFD7AUMA1 IPL60R060CFD7AUMA1 Infineon Technologies Infineon-IPL60R060CFD7-DS-v02_00-EN.pdf?fileId=5546d46262b31d2e01633ed634654cdf Description: MOSFET N CH
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 18A, 10V
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-VSON-4-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3193 pF @ 400 V
auf Bestellung 3000 Stücke:
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3000+4.53 EUR
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IPL60R060CFD7AUMA1 IPL60R060CFD7AUMA1 Infineon Technologies Infineon-IPL60R060CFD7-DS-v02_00-EN.pdf?fileId=5546d46262b31d2e01633ed634654cdf Description: MOSFET N CH
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 18A, 10V
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-VSON-4-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3193 pF @ 400 V
auf Bestellung 4222 Stücke:
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2+10.17 EUR
10+7.22 EUR
100+5.32 EUR
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BFN 19 E6327 BFN 19 E6327 Infineon Technologies bfn19.pdf?folderId=db3a30431441fb5d011449af3ad90232&fileId=db3a30431441fb5d011449c1d62e0238 Description: TRANS PNP 300V 0.2A SOT-89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1 W
Produkt ist nicht verfügbar
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BSC091N03MSCGATMA1 BSC091N03MSCGATMA1 Infineon Technologies INFNS13697-1.pdf?t.download=true&u=5oefqw Description: POWER FIELD-EFFECT TRANSISTOR, 1
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
auf Bestellung 39335 Stücke:
Lieferzeit 10-14 Tag (e)
1094+0.45 EUR
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BSC0904NSIATMA1 BSC0904NSIATMA1 Infineon Technologies BSC0904NSI_Rev+2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432f29829e012f3073397339ef Description: MOSFET N-CH 30V 20A/78A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
auf Bestellung 25965 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.80 EUR
16+1.12 EUR
100+0.74 EUR
500+0.57 EUR
1000+0.52 EUR
2000+0.47 EUR
Mindestbestellmenge: 10
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SPP08P06PXK SPP08P06PXK Infineon Technologies Infineon-SPP08P06PH-DS-v01_06-en.pdf?fileId=db3a304325afd6e001264b5840530c71 Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6.2A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
Produkt ist nicht verfügbar
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IPA50R299CPXKSA1079 INFNS15798-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IPA50R299 - 500V COOLMOS N-CHANN
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO220-3-31
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V
Produkt ist nicht verfügbar
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IPA50R299CP INFNS15798-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO220-3-31
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V
Produkt ist nicht verfügbar
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FS150R12KT4PBPSA1
FS150R12KT4PBPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE LOW PWR ECONO3-4
Packaging: Bulk
auf Bestellung 104 Stücke:
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Anzahl Preis
3+235.79 EUR
Mindestbestellmenge: 3
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FS150R12PT4 INFNS28534-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO4-1-1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 680 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9.35 nF @ 25 V
auf Bestellung 10 Stücke:
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Anzahl Preis
3+227.62 EUR
Mindestbestellmenge: 3
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FS150R17KE3GBOSA1 Infineon-FS150R17KE3G-DS-v02_01-en_de.pdf?fileId=db3a304412b407950112b42fea3c4e48
FS150R17KE3GBOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 240A 1050W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1050 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 13.5 nF @ 25 V
auf Bestellung 424 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+652.57 EUR
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FS150R17KE3G INFNS28151-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1050 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 13.5 nF @ 25 V
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Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+814.18 EUR
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FS150R07N3E4 INFNS28524-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: FS150R07 - IGBT MODULE
Produkt ist nicht verfügbar
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FS150R06KL4B4BDLA1
FS150R06KL4B4BDLA1
Hersteller: Infineon Technologies
Description: MOD IGBT 2 LOW POWER ECONO3-1
Packaging: Tray
Produkt ist nicht verfügbar
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FS100R07N3E4_B11 INFNS28507-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IGBT, 100A, 650V, N-CHANNEL
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 335 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.2 nF @ 25 V
auf Bestellung 92 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+167.23 EUR
Mindestbestellmenge: 3
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FS100R12KT4PB15BPSA1 Infineon-FS100R12KT4G-DS-v02_00-en_de.pdf?fileId=db3a3043156fd5730116190dc0431c81
Hersteller: Infineon Technologies
Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: AG-ECONO3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 515 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
auf Bestellung 218 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+189.62 EUR
Mindestbestellmenge: 3
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FS100R07N2E4_B11 INFN-S-A0003209908-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: FS100R07 - IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 125 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.2 nF @ 25 V
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+140.15 EUR
Mindestbestellmenge: 4
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FS100R07PE4BOSA1 Infineon-FS100R07PE4-DS-v02_00-en_de.pdf?fileId=db3a304333227b5e013359531e9908c6
FS100R07PE4BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 650V 100A 335W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 335 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.2 nF @ 25 V
auf Bestellung 33 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+199.18 EUR
Mindestbestellmenge: 3
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FS100R12PT4 INFNS28515-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO4-1-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 135 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
auf Bestellung 1361 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+194.81 EUR
Mindestbestellmenge: 3
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FS100R12KT4PBPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE LOW PWR ECONO2-6
Packaging: Bulk
auf Bestellung 178 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+345.18 EUR
Mindestbestellmenge: 2
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FS100R17PE4BOSA1 Infineon-FS100R17PE4-DS-v02_01-en_de.pdf?fileId=db3a3043243b5f170124d89c3e2d7380
FS100R17PE4BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 100A 600W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
auf Bestellung 243 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+205.22 EUR
Mindestbestellmenge: 3
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FS100R07N2E4B11BOSA1 Infineon-FS100R07N2E4_B11-DS-v03_00-EN.pdf?fileId=db3a30433004641301304036f2a4573e
FS100R07N2E4B11BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 650V 125A 20MW
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 125 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.2 nF @ 25 V
Produkt ist nicht verfügbar
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FS100R17PE4BOSA1 Infineon-FS100R17PE4-DS-v02_01-en_de.pdf?fileId=db3a3043243b5f170124d89c3e2d7380
FS100R17PE4BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 100A 600W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
Produkt ist nicht verfügbar
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FS100R17KS4F
FS100R17KS4F
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 100A 960W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 4.7V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 960 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 7 nF @ 25 V
Produkt ist nicht verfügbar
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IRF40H233XTMA1 Infineon-IRF40H233-DS-v01_00-EN.pdf?fileId=5546d462689a790c0168a1d5500962d9
IRF40H233XTMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 40V 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Supplier Device Package: PG-TDSON-8-900
Part Status: Obsolete
Produkt ist nicht verfügbar
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IRF40H233ATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 40V 65A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.8W (Ta), 50W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 20V
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 35A, 10V
Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 50µA
Supplier Device Package: PG-TDSON-8-4
Produkt ist nicht verfügbar
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BSM300GB120DLCHOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 625A 2500W
Produkt ist nicht verfügbar
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BTS409L1E3062A INFNS30248-1.pdf?t.download=true&u=5oefqw
BTS409L1E3062A
Hersteller: Infineon Technologies
Description: AUTOMOTIVE SMART HIGH SIDE SWITC
Features: Auto Restart, Slew Rate Controlled
Packaging: Bulk
Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 160mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-5-2
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Reverse Current, Short Circuit
Part Status: Active
Produkt ist nicht verfügbar
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SIGC10T60EX1SA5 Infineon-SIGC10T60E-DS-v02_02-EN.pdf?fileId=db3a30433b47825b013b843ba8c832bb
SIGC10T60EX1SA5
Hersteller: Infineon Technologies
Description: IGBT CHIP
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
Supplier Device Package: Die
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Produkt ist nicht verfügbar
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SIGC10T60EX7SA3 Infineon-SIGC10T60E-DS-v02_02-EN.pdf?fileId=db3a30433b47825b013b843ba8c832bb
Hersteller: Infineon Technologies
Description: IGBT 3 CHIP 600V 20A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
Supplier Device Package: Die
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Produkt ist nicht verfügbar
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SIGC10T60EX1SA3 Infineon-SIGC10T60E-DS-v02_02-EN.pdf?fileId=db3a30433b47825b013b843ba8c832bb
Hersteller: Infineon Technologies
Description: IGBT 3 CHIP 600V 20A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
Supplier Device Package: Die
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Produkt ist nicht verfügbar
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SIGC10T60EX7SA1 Infineon-SIGC10T60E-DS-v02_02-EN.pdf?fileId=db3a30433b47825b013b843ba8c832bb
Hersteller: Infineon Technologies
Description: IGBT 3 CHIP 600V 20A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
Supplier Device Package: Die
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Produkt ist nicht verfügbar
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IKW50N65RH5XKSA1 Infineon-IKW50N65RH5-DataSheet-v02_01-EN.pdf?fileId=5546d46275b79adb0175dc27f90f31a6
IKW50N65RH5XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/180ns
Switching Energy: 230µJ (on), 180µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 305 W
auf Bestellung 280 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.28 EUR
30+7.10 EUR
120+5.96 EUR
Mindestbestellmenge: 2
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IKW50N65SS5XKSA1 Infineon-IKW50N65SS5-DataSheet-v02_01-EN.pdf?fileId=5546d46275b79adb0175dc280a0e31a9
IKW50N65SS5XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/140ns
Switching Energy: 320µJ (on), 550µJ (off)
Test Condition: 400V, 50A, 9Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 274 W
auf Bestellung 116 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.58 EUR
30+9.83 EUR
Mindestbestellmenge: 2
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TLE42642GHTMA1 Infineon-TLE4264-2G-DataSheet-v02_71-EN.pdf?fileId=5546d46258fc0bc101595f6960991f2d
TLE42642GHTMA1
Hersteller: Infineon Technologies
Description: IC REG LIN 5V 150MA PG-SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 70 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 68dB (100Hz)
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 4 mA
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE42794GXUMA1 Infineon-TLE42794-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc101595f8e494d1f80
TLE42794GXUMA1
Hersteller: Infineon Technologies
Description: IC REG LIN FIXED POS LDO REG 5V
auf Bestellung 87000 Stücke:
Lieferzeit 10-14 Tag (e)
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TLE42794GXUMA2 Infineon-TLE42794-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc101595f8e494d1f80
TLE42794GXUMA2
Hersteller: Infineon Technologies
Description: IC REG LINEAR 5V 100MA 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 280 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Part Status: Active
PSRR: 70dB (100Hz)
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 8 mA
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE42794GXUMA2 Infineon-TLE42794-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc101595f8e494d1f80
TLE42794GXUMA2
Hersteller: Infineon Technologies
Description: IC REG LINEAR 5V 100MA 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 280 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Part Status: Active
PSRR: 70dB (100Hz)
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 8 mA
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2272 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.34 EUR
11+1.71 EUR
25+1.55 EUR
100+1.37 EUR
250+1.29 EUR
500+1.24 EUR
1000+1.20 EUR
Mindestbestellmenge: 8
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TC267D40F200SBBKXUMA1 Infineon-TC26xBC-DS-v01_00-EN.pdf?fileId=5546d462694c98b40169538e06030445
TC267D40F200SBBKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 2.5MB FLSH 292LFBGA
Produkt ist nicht verfügbar
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IM231L6S1BAUMA1 Infineon-IM231-L6S1B_T2B-DataSheet-v02_01-EN.pdf?fileId=5546d462689a790c0169067334d10ef3
Hersteller: Infineon Technologies
Description: CIPOS MICRO
Produkt ist nicht verfügbar
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IM231L6S1BAUMA1 Infineon-IM231-L6S1B_T2B-DataSheet-v02_01-EN.pdf?fileId=5546d462689a790c0169067334d10ef3
Hersteller: Infineon Technologies
Description: CIPOS MICRO
Produkt ist nicht verfügbar
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IM231M6S1BAUMA1 Infineon-IM231-M6S1B_T2B-DataSheet-v02_01-EN.pdf?fileId=5546d462689a790c0169067346a60ef9
Hersteller: Infineon Technologies
Description: CIPOS MICRO
Produkt ist nicht verfügbar
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IGCM10F60HAXKMA1 IGCM10F60HA.pdf
IGCM10F60HAXKMA1
Hersteller: Infineon Technologies
Description: IGBT 600V 10A 24PWRDIP MOD
Packaging: Bulk
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 10 A
Voltage: 600 V
auf Bestellung 182 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
45+10.89 EUR
Mindestbestellmenge: 45
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IRS26320JTRPBF IRS26320JPbF_Factsheet.pdf
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 12V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TLE82422LXUMA2 Infineon-TLE8242_2-DS-v01_00-en.pdf?fileId=db3a3043271faefd012743c4b3380fdd
TLE82422LXUMA2
Hersteller: Infineon Technologies
Description: IC CURRENT SOURCE 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Sensing Method: Low-Side
Mounting Type: Surface Mount
Function: Current Source
Voltage - Input: 5.5V ~ 42V
Operating Temperature: -40°C ~ 150°C
Supplier Device Package: PG-LQFP-64-4
Part Status: Active
auf Bestellung 239 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+28.97 EUR
10+23.04 EUR
25+21.56 EUR
100+19.93 EUR
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BSP88E6327 BSP88.pdf
BSP88E6327
Hersteller: Infineon Technologies
Description: MOSFET N-CH 240V 350MA SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 350mA, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 108µA
Supplier Device Package: PG-SOT223-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 4.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 95 pF @ 25 V
auf Bestellung 194558 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1484+0.34 EUR
Mindestbestellmenge: 1484
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TT500N16KOFS01HPSA1
Hersteller: Infineon Technologies
Description: DIODE BG-PB60-1
Produkt ist nicht verfügbar
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CY7C1350G-200AXI Infineon-CY7C1350G_4-Mbit_(128_K_36)_Pipelined_SRAM_with_NoBL_Architecture-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec1032c35ab
CY7C1350G-200AXI
Hersteller: Infineon Technologies
Description: IC SRAM 4.5MBIT PAR 100TQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 2.8 ns
Memory Organization: 128K x 36
DigiKey Programmable: Not Verified
auf Bestellung 2897 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
49+10.51 EUR
Mindestbestellmenge: 49
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IRFI4212H-117PXKMA1 irfi4212h-117p.pdf?fileId=5546d462533600a401535623fc841f7a
IRFI4212H-117PXKMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 100V 11A TO220-5
Packaging: Tube
Package / Case: TO-220-5 Full Pack, Formed Leads
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 18W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 50V
Rds On (Max) @ Id, Vgs: 72.5mOhm @ 6.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-5 Full-Pak
Part Status: Active
auf Bestellung 768 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.15 EUR
50+1.79 EUR
100+1.72 EUR
500+1.48 EUR
Mindestbestellmenge: 6
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EVAL2EDL23I06PJTOBO1 Infineon-2EDL23I06PJ_EVAL-ApplicationNotes-v01_00-EN.pdf?fileId=5546d46145f1f3a401461dcd1de41bd5
EVAL2EDL23I06PJTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR 2EDL23I06-PJ
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Utilized IC / Part: 2EDL23I06-PJ
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+150.92 EUR
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IPI80N04S3-06 INFNS10782-1.pdf?t.download=true&u=5oefqw
IPI80N04S3-06
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
670+0.73 EUR
Mindestbestellmenge: 670
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IPI80N04S3-03 INFNS10911-1.pdf?t.download=true&u=5oefqw
IPI80N04S3-03
Hersteller: Infineon Technologies
Description: N-CHANNEL AUTOMOTIVE MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
248+2.02 EUR
Mindestbestellmenge: 248
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IPI80N04S404AKSA1 Infineon-IPP_B_I80N04S4_04-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c71d4085dfa&ack=t
IPI80N04S404AKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 80A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 80A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TO262-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 285682 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
268+1.82 EUR
Mindestbestellmenge: 268
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IPB80N04S2-H4 INFNS11807-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IPB80N04 - 20V-40V N-CHANNEL AUT
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 148 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
Produkt ist nicht verfügbar
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IPI80N04S3-04 INFNS10666-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Produkt ist nicht verfügbar
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BSC050N10NS5ATMA1 Infineon-BSC050N10NS5-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0164366daea34f7d
BSC050N10NS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 16A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 72µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 50 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+1.21 EUR
Mindestbestellmenge: 5000
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BSC050N10NS5ATMA1 Infineon-BSC050N10NS5-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0164366daea34f7d
BSC050N10NS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 16A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 72µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 50 V
auf Bestellung 5108 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+2.96 EUR
10+1.99 EUR
100+1.64 EUR
500+1.45 EUR
Mindestbestellmenge: 6
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IPA60R380C6 INFN-S-A0004583381-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: 600V COOLMOS POWER TRANSISTOR
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
Produkt ist nicht verfügbar
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BBY5102VH6327XTSA1 bby51series.pdf
BBY5102VH6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE TUNING 2SC79
Packaging: Bulk
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 3.7pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C4
Supplier Device Package: PG-SC79-2-1
Part Status: Obsolete
Voltage - Peak Reverse (Max): 7 V
Capacitance Ratio: 2.2
auf Bestellung 402000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2420+0.20 EUR
Mindestbestellmenge: 2420
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IRF6610TR1 description
IRF6610TR1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 15A DIRECTFET
Produkt ist nicht verfügbar
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IPL60R060CFD7AUMA1 Infineon-IPL60R060CFD7-DS-v02_00-EN.pdf?fileId=5546d46262b31d2e01633ed634654cdf
IPL60R060CFD7AUMA1
Hersteller: Infineon Technologies
Description: MOSFET N CH
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 18A, 10V
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-VSON-4-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3193 pF @ 400 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+4.53 EUR
Mindestbestellmenge: 3000
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IPL60R060CFD7AUMA1 Infineon-IPL60R060CFD7-DS-v02_00-EN.pdf?fileId=5546d46262b31d2e01633ed634654cdf
IPL60R060CFD7AUMA1
Hersteller: Infineon Technologies
Description: MOSFET N CH
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 18A, 10V
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-VSON-4-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3193 pF @ 400 V
auf Bestellung 4222 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.17 EUR
10+7.22 EUR
100+5.32 EUR
Mindestbestellmenge: 2
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BFN 19 E6327 bfn19.pdf?folderId=db3a30431441fb5d011449af3ad90232&fileId=db3a30431441fb5d011449c1d62e0238
BFN 19 E6327
Hersteller: Infineon Technologies
Description: TRANS PNP 300V 0.2A SOT-89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1 W
Produkt ist nicht verfügbar
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BSC091N03MSCGATMA1 INFNS13697-1.pdf?t.download=true&u=5oefqw
BSC091N03MSCGATMA1
Hersteller: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR, 1
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
auf Bestellung 39335 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1094+0.45 EUR
Mindestbestellmenge: 1094
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BSC0904NSIATMA1 BSC0904NSI_Rev+2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432f29829e012f3073397339ef
BSC0904NSIATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 20A/78A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
auf Bestellung 25965 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.80 EUR
16+1.12 EUR
100+0.74 EUR
500+0.57 EUR
1000+0.52 EUR
2000+0.47 EUR
Mindestbestellmenge: 10
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SPP08P06PXK Infineon-SPP08P06PH-DS-v01_06-en.pdf?fileId=db3a304325afd6e001264b5840530c71
SPP08P06PXK
Hersteller: Infineon Technologies
Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6.2A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
Produkt ist nicht verfügbar
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