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BTS247Z BTS247Z Infineon Technologies INFNS14870-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 12634 Stücke:
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BTS247ZE3062ANTMA1 BTS247ZE3062ANTMA1 Infineon Technologies INFNS27931-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 12A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 2V @ 90µA
Supplier Device Package: PG-TO263-5-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V
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IPP60R600P6 IPP60R600P6 Infineon Technologies Infineon-IPx60R600P6-DS-v02_02-EN.pdf?fileId=db3a30433f2e70c5013f3862b5622681 Description: POWER FIELD-EFFECT TRANSISTOR, 6
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 557 pF @ 100 V
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FF150R12KS4B2HOSA1 Infineon Technologies INFNS28343-1.pdf?t.download=true&u=5oefqw Description: FF150R12 - IGBT MODULE
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IPG20N06S2L-35AATMA1 IPG20N06S2L-35AATMA1 Infineon Technologies INFNS28025-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 65W (Tc)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 27µA
Supplier Device Package: PG-TDSON-8-10
Part Status: Active
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IKZA75N65RH5XKSA1 IKZA75N65RH5XKSA1 Infineon Technologies Infineon-IKZA75N65RH5-DataSheet-v02_01-EN.pdf?fileId=5546d46275b79adb0175dc28779431bb Description: IGBT TRENCH FS 650V 80A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: PG-TO247-4-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 25ns/180ns
Switching Energy: 310µJ (on), 300µJ (off)
Test Condition: 400V, 37.5A, 9Ohm, 15V
Gate Charge: 168 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
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CYD09S72V18-167BBXC CYD09S72V18-167BBXC Infineon Technologies CYD9,18,36,72S36V18.pdf Description: IC SRAM 9MBIT PAR 167MHZ 256FBGA
Packaging: Tray
Package / Case: 256-LBGA
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.42V ~ 1.58V, 1.7V ~ 1.9V
Technology: SRAM - Dual Port, Synchronous
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 256-FBGA (17x17)
Part Status: Obsolete
Memory Interface: Parallel
Access Time: 4 ns
Memory Organization: 128K x 72
DigiKey Programmable: Not Verified
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T730N42TOFVTXPSA1 Infineon Technologies Infineon-T730N-DataSheet-v03_01-EN.pdf?fileId=5546d4627112d9d501712b083ec8402a Description: SCR MODULE 4200V 1840A DO200AC
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XDPL8220XUMA1 XDPL8220XUMA1 Infineon Technologies Infineon-XDPL8220-DS-v01_00-EN.pdf?fileId=5546d462584d1d4a015887029bcb5f03 Description: IC LED DRIVER OFFL PWM 16DSO
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 50MHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 85°C (TA)
Internal Switch(s): No
Topology: Flyback
Supplier Device Package: PG-DSO-16
Dimming: PWM
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 24V
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IRGC10B60KB Infineon Technologies Short_Form_Cat_2016.pdf Description: IGBT CHIP
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.3V @ 15V, 2A
Supplier Device Package: Die
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Produkt ist nicht verfügbar
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IPLK60R1K5PFD7ATMA1 IPLK60R1K5PFD7ATMA1 Infineon Technologies Infineon-IPLK60R1K5PFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626fc1ce0b016fd787ece33d8f Description: MOSFET N-CH 600V 3.8A THIN-PAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 700mA, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 40µA
Supplier Device Package: PG-TDSON-8-52
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 169 pF @ 400 V
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IPLK60R600PFD7ATMA1 IPLK60R600PFD7ATMA1 Infineon Technologies Infineon-IPLK60R600PFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626fc1ce0b016fd749ad343d86 Description: MOSFET N-CH 600V 7A THIN-PAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 80µA
Supplier Device Package: PG-TDSON-8-52
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 400 V
Produkt ist nicht verfügbar
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IPD60R1K5PFD7SAUMA1 IPD60R1K5PFD7SAUMA1 Infineon Technologies Infineon-IPD60R1K5PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e225df2d46744 Description: MOSFET N-CH 600V 3.6A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 700mA, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 40µA
Supplier Device Package: PG-TO252-3-344
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 169 pF @ 400 V
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XDPS21081XUMA1 XDPS21081XUMA1 Infineon Technologies Infineon-XDPS21081-DataSheet-v02_00-EN.pdf?fileId=5546d46274692d0e017475eb92cd45db Description: XDP SMPS TV/PC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -25°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 23kHz ~ 139.1kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.2V ~ 20.5V
Supplier Device Package: PG-DSO-12-20
Synchronous Rectifier: No
Control Features: Current Limit, Dead Time Control, Enable, Frequency Control, Soft Start
Output Phases: 1
Clock Sync: No
Part Status: Not For New Designs
Number of Outputs: 1
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IPDD60R170CFD7XTMA1 IPDD60R170CFD7XTMA1 Infineon Technologies Infineon-IPDD60R170CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751c2e907f42b4 Description: MOSFET N-CH 600V 19A HDSOP-10
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 4.9A, 10V
Power Dissipation (Max): 137W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 240µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1016 pF @ 400 V
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4+4.65 EUR
10+3.47 EUR
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KP212K1409XTMA1 KP212K1409XTMA1 Infineon Technologies Infineon-KP212K1409-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb3201754116ad5a5370 Description: SENSOR 16.68PSIA 4.65V DSOF8
Packaging: Cut Tape (CT)
Features: Amplified Output, Temperature Compensated
Package / Case: 8-SMD Module
Output Type: Analog Voltage
Mounting Type: Surface Mount
Output: 0.4 V ~ 4.65 V
Operating Pressure: 1.45PSI ~ 16.68PSI (10kPa ~ 115kPa)
Pressure Type: Absolute
Accuracy: ±0.3PSI (±2.07kPa)
Operating Temperature: -40°C ~ 125°C (TA)
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: PG-DSOF-8-16
Port Style: No Port
Maximum Pressure: 21.76PSI (150kPa)
Grade: Automotive
Qualification: AEC-Q100
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5+4.87 EUR
10+4.66 EUR
25+4.4 EUR
50+4.23 EUR
100+4.07 EUR
500+3.75 EUR
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KP212F1701XTMA1 KP212F1701XTMA1 Infineon Technologies Infineon-KP212F1701-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb320175410daf8b536d Description: SENSOR 16.68PSIA 4.5V DSOF8
Packaging: Cut Tape (CT)
Features: Amplified Output, Temperature Compensated
Package / Case: 8-SMD Module
Output Type: Analog Voltage
Mounting Type: Surface Mount
Output: 0.5 V ~ 4.5 V
Operating Pressure: 2.18PSI ~ 16.68PSI (15kPa ~ 115kPa)
Pressure Type: Absolute
Accuracy: ±0.29PSI (±2kPa)
Operating Temperature: -40°C ~ 125°C (TA)
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: PG-DSOF-8-16
Port Style: No Port
Maximum Pressure: 21.76PSI (150kPa)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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100+4.07 EUR
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TC377TP96F300SAAKXUMA1 TC377TP96F300SAAKXUMA1 Infineon Technologies Infineon-AURIX_TC37x_Addendum-DataSheet-v01_00-EN.pdf?fileId=5546d46272e49d2a01730574c782647e Description: IC MCU 32BIT 6MB FLASH 292LFBGA
Packaging: Cut Tape (CT)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 6MB (6M x 8)
RAM Size: 1.1M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
DigiKey Programmable: Not Verified
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25+37.77 EUR
100+35.2 EUR
250+33.97 EUR
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BSZ0910LSATMA1 BSZ0910LSATMA1 Infineon Technologies Infineon-BSZ0910LS-DataSheet-v02_00-EN.pdf?fileId=5546d46271bf4f9201720e9f3ab57cdf Description: MOSFET N-CH 30V 18A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.1W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
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BSZ0910LSATMA1 BSZ0910LSATMA1 Infineon Technologies Infineon-BSZ0910LS-DataSheet-v02_00-EN.pdf?fileId=5546d46271bf4f9201720e9f3ab57cdf Description: MOSFET N-CH 30V 18A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.1W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
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TLI4971A050T5UE0001XUMA1 TLI4971A050T5UE0001XUMA1 Infineon Technologies Infineon-TLI4971_25_50_75_120-DataSheet-v01_20-EN.pdf?fileId=5546d462700c0ae6017034d731621b09 Description: CURRENT SEN HE/OL 50A PG-TISON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Polarization: Unidirectional
Sensitivity: 24mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: DC ~ 240kHz
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 250ns
Sensor Type: Hall Effect, Open Loop
Linearity: ±2.25%
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 50A
Supplier Device Package: PG-TISON-8-5
Grade: Automotive
Part Status: Active
Number of Channels: 1
Qualification: AEC-Q100
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TLI4971A025T5UE0001XUMA1 TLI4971A025T5UE0001XUMA1 Infineon Technologies Infineon-TLI4971_25_50_75_120-DataSheet-v01_20-EN.pdf?fileId=5546d462700c0ae6017034d731621b09 Description: CURRENT SEN HE/OL 25A PG-TISON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Polarization: Unidirectional
Sensitivity: 48mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: DC ~ 240kHz
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 250ns
Sensor Type: Hall Effect, Open Loop
Linearity: ±2.25%
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 25A
Supplier Device Package: PG-TISON-8-5
Grade: Automotive
Part Status: Active
Number of Channels: 1
Qualification: AEC-Q100
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LITELDOSBCV33BOARDTOBO1 LITELDOSBCV33BOARDTOBO1 Infineon Technologies Infineon-Lite_SBC_Evaluation_Board-Getting_Started-UM-v01_00-EN.pdf?fileId=5546d46267c74c9a0167d02c0bcd1a6a Description: EVAL BOARD FOR TLE9461-3ES
Packaging: Box
Function: System Basis Chip (SBC)
Type: Interface
Contents: Board(s)
Utilized IC / Part: TLE9461-3ES
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1+219.61 EUR
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TT104N08KOFHPSA1 Infineon Technologies TT104N.pdf Description: SCR MODULE 800V 160A MODULE
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TT104N12KOFHPSA1 Infineon Technologies TT104N_Type.pdf Description: SCR MODULE 1.2KV 160A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 104 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.2 kV
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TT104N12KOFAHPSA1 Infineon Technologies TT104N_Type.pdf Description: SCR MODULE 1.2KV 160A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C
Structure: Common Anode - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 104 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.2 kV
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TT104N12KOFKHPSA1 Infineon Technologies TT104N_Type.pdf Description: SCR MODULE 1.2KV 160A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C
Structure: Common Cathode - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 104 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.2 kV
Produkt ist nicht verfügbar
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CY2XF33LXC533T CY2XF33LXC533T Infineon Technologies download Description: TSBU
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2+13.85 EUR
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IKW40N65RH5XKSA1 IKW40N65RH5XKSA1 Infineon Technologies Infineon-IKW40N65RH5-DataSheet-v02_01-EN.pdf?fileId=5546d46275b79adb0175dc16a3d630f8 Description: IGBT TRENCH FS 650V 74A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/165ns
Switching Energy: 160µJ (on), 120µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 250 W
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IKW40N65H5 IKW40N65H5 Infineon Technologies Part_Number_Guide_Web.pdf Description: IGBT 650V 74A 255W PG-TO247-3
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BSP324L6327 BSP324L6327 Infineon Technologies INFNS13390-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 25Ohm @ 170mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 94µA
Supplier Device Package: PG-SOT223-4-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 154 pF @ 25 V
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BSP324 E6327 BSP324 E6327 Infineon Technologies BSP324.pdf Description: MOSFET N-CH 400V 170MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 25Ohm @ 170mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 94µA
Supplier Device Package: PG-SOT223-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 154 pF @ 25 V
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BCR401RE6433HTMA1 BCR401RE6433HTMA1 Infineon Technologies Infineon-BCR401R-DS-v01_01-EN.pdf?fileId=5546d46262b31d2e0162f27265483c8b Description: IC LED DRVR LIN 60MA SOT143R-3D
Packaging: Bulk
Package / Case: SOT-143R
Voltage - Output: 16V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 60mA
Internal Switch(s): Yes
Supplier Device Package: PG-SOT-143R-3D
Voltage - Supply (Min): 1.2V
Voltage - Supply (Max): 18V
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TLE49452LHALA1 TLE49452LHALA1 Infineon Technologies TLE49x5L.pdf Description: MAGNETIC SWITCH BIPOLAR 3SSO
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Output Type: Open Collector
Polarization: North Pole, South Pole
Function: Bipolar Switch
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 3.8V ~ 24V
Technology: Hall Effect
Sensing Range: ±3mT Trip, ±6mT Release
Current - Output (Max): 100mA
Current - Supply (Max): 8mA
Test Condition: 25°C
Part Status: Last Time Buy
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1ED3860MU12MXUMA1 1ED3860MU12MXUMA1 Infineon Technologies Infineon-1ED38x0Mc12M-DataSheet-v02_00-EN.pdf?fileId=5546d46274cf54d50174d97c260c1f5d Description: DIGITAL ISO 1CH GT DVR DSO16-28
Packaging: Tape & Reel (TR)
Package / Case: 16-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6A
Technology: Magnetic Coupling
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-16-28
Rise / Fall Time (Typ): 15ns, 15ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 13V ~ 25V
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1ED3860MU12MXUMA1 1ED3860MU12MXUMA1 Infineon Technologies Infineon-1ED38x0Mc12M-DataSheet-v02_00-EN.pdf?fileId=5546d46274cf54d50174d97c260c1f5d Description: DIGITAL ISO 1CH GT DVR DSO16-28
Packaging: Cut Tape (CT)
Package / Case: 16-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6A
Technology: Magnetic Coupling
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-16-28
Rise / Fall Time (Typ): 15ns, 15ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 13V ~ 25V
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XDPS21081XUMA1 XDPS21081XUMA1 Infineon Technologies Infineon-XDPS21081-DataSheet-v02_00-EN.pdf?fileId=5546d46274692d0e017475eb92cd45db Description: XDP SMPS TV/PC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -25°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 23kHz ~ 139.1kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.2V ~ 20.5V
Supplier Device Package: PG-DSO-12-20
Synchronous Rectifier: No
Control Features: Current Limit, Dead Time Control, Enable, Frequency Control, Soft Start
Output Phases: 1
Clock Sync: No
Part Status: Not For New Designs
Number of Outputs: 1
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TLE5027CE6747HAMA3 Infineon Technologies TLE5027C_PB_7-2-13.pdf Description: SENSOR MAGNETORESISTIVE PWM 3SIP
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TLE5027CE6747HAMA4 Infineon Technologies TLE5027C_PB_7-2-13.pdf Description: SENSOR MAGNETORESISTIVE PWM 3SIP
Packaging: Tape & Box (TB)
Package / Case: 3-SSIP Module
Output Type: PWM
Mounting Type: Through Hole
Axis: X, Y, Z
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Magnetoresistive
Supplier Device Package: PG-SSO-3-92
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q100
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TLE5027CXAAD47AGXAMA1 TLE5027CXAAD47AGXAMA1 Infineon Technologies Description: SENSOR MAGNETORESISTIVE PWM 3SIP
Packaging: Tape & Box (TB)
Package / Case: 3-SSIP Module
Output Type: PWM
Mounting Type: Through Hole
Axis: X, Y, Z
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Magnetoresistive
Supplier Device Package: PG-SSO-3-92
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q100
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FF150R12KE3B8BDLA1 Infineon Technologies INFNS28343-1.pdf?t.download=true&u=5oefqw Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: AG-62MM
Part Status: Active
Current - Collector (Ic) (Max): 225 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
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FF150R12ME3G Infineon Technologies INFNS28345-1.pdf?t.download=true&u=5oefqw Description: IGBT MODULE 1200V 200A 695W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 695 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 10.5 nF @ 25 V
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FF150R12ME3GBOSA1 FF150R12ME3GBOSA1 Infineon Technologies Infineon-FF150R12ME3G-DS-v02_02-en_de.pdf?fileId=db3a304412b407950112b43461c76021 Description: IGBT MOD 1200V 200A 695W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 695 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 10.5 nF @ 25 V
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FF150R12KE3B8BOSA1 Infineon Technologies Description: MOD IGBT LOW PWR ECONO2-6
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PBL38630/2SOTR2B Infineon Technologies Description: FLEXISLIC SLIC
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BFP410H6327XTSA1 BFP410H6327XTSA1 Infineon Technologies Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920 Description: RF TRANS NPN 5V 25GHZ SOT-343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21.5dB
Power - Max: 150mW
Current - Collector (Ic) (Max): 40mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 13mA, 2V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.2dB @ 2GHz
Supplier Device Package: PG-SOT343-4-2
Part Status: Active
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BFP410H6327XTSA1 BFP410H6327XTSA1 Infineon Technologies Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920 Description: RF TRANS NPN 5V 25GHZ SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21.5dB
Power - Max: 150mW
Current - Collector (Ic) (Max): 40mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 13mA, 2V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.2dB @ 2GHz
Supplier Device Package: PG-SOT343-4-2
Part Status: Active
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29+0.62 EUR
42+0.43 EUR
47+0.38 EUR
100+0.33 EUR
250+0.3 EUR
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1000+0.28 EUR
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TT142N12KOFHPSA1 Infineon Technologies TT142N.pdf Description: SCR MODULE 1.2KV 230A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4800A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 142 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 1.2 kV
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3+167.42 EUR
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MB4239PFV-GT-BND-ER-6E1 Infineon Technologies Description: IC PWR SUPPLY MONITOR 16SSOP
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MB4237PFV-GT-BND-ERE1 Infineon Technologies Description: IC PWR SUPPLY MONITOR 24SSOP
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MB3789APFV-GT-BND-ERE1 Infineon Technologies Description: IC SUPERVISOR ANALOG 16SSOP
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB4243PFV-GT-BNDE1 Infineon Technologies Description: IC POWER MANAGEMENT 48LQFP
Packaging: Tray
Produkt ist nicht verfügbar
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TLE493D-W2B6 3D-MS2GO TLE493D-W2B6 3D-MS2GO Infineon Technologies Infineon-Infineon-3DMS2GO_TLE493D-W2B6-UM-v01_01-EN-UserManual-v01_01-EN.pdf?fileId=5546d462636cc8fb016418342fea3f54 Description: TLE493D-W2B6 3D MAG SENSOR 2GO
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TLE493DA2B6MS2GOTOBO1 TLE493DA2B6MS2GOTOBO1 Infineon Technologies Infineon-TLE493D-A2B6-UM-v01_01-UserManual-v01_11-EN.pdf?fileId=5546d46262b31d2e01633b4bba5f3c5a Description: SENSOR HALL EFFECT I2C 2GO
Packaging: Bulk
Interface: I2C, Serial
Contents: Board(s)
Voltage - Supply: 2.8V ~ 3.5V
Sensor Type: Magnetic, Linear, Rotary Position
Utilized IC / Part: TLE493D-A2B6
Supplied Contents: Board(s)
Sensing Range: ±160mT ~ ±230mT
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TLE493DA1B6HTSA1 TLE493DA1B6HTSA1 Infineon Technologies TLE493D-A1B6_Rev1.2_4-9-19.pdf Description: IC 3D MAGN SENSOR TSOP6-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.9V ~ 3.5V
Technology: Hall Effect
Sensing Range: ±60mT
Supplier Device Package: PG-TSOP-6-6-5
Produkt ist nicht verfügbar
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IPU60R2K1CEAKMA1 IPU60R2K1CEAKMA1 Infineon Technologies Infineon-IPU60R2K1CE-DS-v02_02-EN.pdf?fileId=5546d46249be182c0149c7e409461eac Description: CONSUMER
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 760mA, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
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CYRF6936-XC Infineon Technologies Description: IC SOC WIRELESS USB
Packaging: Bulk
DigiKey Programmable: Not Verified
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ESD145B1W01005E6327XTSA1 ESD145B1W01005E6327XTSA1 Infineon Technologies Infineon-New+generation+ESD+protection+diodes-PB-v01_00-EN.pdf?fileId=5546d4625cc9456a015d0ccb7b9a57e3 Description: TVS DIODE 18VWM 5VC P/PGWLL22
Packaging: Tape & Reel (TR)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: RF Antenna
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 18V (Max)
Supplier Device Package: P/PG-WLL-2-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 18.5V
Voltage - Clamping (Max) @ Ipp: 5V (Typ)
Power - Peak Pulse: 21W
Power Line Protection: No
Part Status: Active
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ESD145B1W01005E6327XTSA1 ESD145B1W01005E6327XTSA1 Infineon Technologies Infineon-New+generation+ESD+protection+diodes-PB-v01_00-EN.pdf?fileId=5546d4625cc9456a015d0ccb7b9a57e3 Description: TVS DIODE 18VWM 5VC P/PGWLL22
Packaging: Cut Tape (CT)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: RF Antenna
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 18V (Max)
Supplier Device Package: P/PG-WLL-2-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 18.5V
Voltage - Clamping (Max) @ Ipp: 5V (Typ)
Power - Peak Pulse: 21W
Power Line Protection: No
Part Status: Active
auf Bestellung 2714 Stücke:
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91+0.19 EUR
139+0.13 EUR
325+0.054 EUR
500+0.051 EUR
1000+0.046 EUR
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IMBG120R220M1HXTMA1 IMBG120R220M1HXTMA1 Infineon Technologies Infineon-IMBG120R220M1H-DataSheet-v02_01-EN.pdf?fileId=5546d462749a7c2d0174b0ecffdf326f Description: SICFET N-CH 1.2KV 13A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 294mOhm @ 4A, 18V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1.6mA
Supplier Device Package: PG-TO263-7-12
Part Status: Active
Vgs (Max): +18V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 800 V
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10+6.97 EUR
100+5.04 EUR
500+4.21 EUR
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BTS247Z INFNS14870-1.pdf?t.download=true&u=5oefqw
BTS247Z
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
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237+2.13 EUR
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BTS247ZE3062ANTMA1 INFNS27931-1.pdf?t.download=true&u=5oefqw
BTS247ZE3062ANTMA1
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 12A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 2V @ 90µA
Supplier Device Package: PG-TO263-5-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V
auf Bestellung 80650 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
113+4.47 EUR
Mindestbestellmenge: 113
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IPP60R600P6 Infineon-IPx60R600P6-DS-v02_02-EN.pdf?fileId=db3a30433f2e70c5013f3862b5622681
IPP60R600P6
Hersteller: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR, 6
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 557 pF @ 100 V
Produkt ist nicht verfügbar
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FF150R12KS4B2HOSA1 INFNS28343-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: FF150R12 - IGBT MODULE
Produkt ist nicht verfügbar
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IPG20N06S2L-35AATMA1 INFNS28025-1.pdf?t.download=true&u=5oefqw
IPG20N06S2L-35AATMA1
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 65W (Tc)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 27µA
Supplier Device Package: PG-TDSON-8-10
Part Status: Active
Produkt ist nicht verfügbar
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IKZA75N65RH5XKSA1 Infineon-IKZA75N65RH5-DataSheet-v02_01-EN.pdf?fileId=5546d46275b79adb0175dc28779431bb
IKZA75N65RH5XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 80A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: PG-TO247-4-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 25ns/180ns
Switching Energy: 310µJ (on), 300µJ (off)
Test Condition: 400V, 37.5A, 9Ohm, 15V
Gate Charge: 168 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
auf Bestellung 49 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+14.82 EUR
30+8.75 EUR
Mindestbestellmenge: 2
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CYD09S72V18-167BBXC CYD9,18,36,72S36V18.pdf
CYD09S72V18-167BBXC
Hersteller: Infineon Technologies
Description: IC SRAM 9MBIT PAR 167MHZ 256FBGA
Packaging: Tray
Package / Case: 256-LBGA
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.42V ~ 1.58V, 1.7V ~ 1.9V
Technology: SRAM - Dual Port, Synchronous
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 256-FBGA (17x17)
Part Status: Obsolete
Memory Interface: Parallel
Access Time: 4 ns
Memory Organization: 128K x 72
DigiKey Programmable: Not Verified
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+403.59 EUR
Mindestbestellmenge: 2
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T730N42TOFVTXPSA1 Infineon-T730N-DataSheet-v03_01-EN.pdf?fileId=5546d4627112d9d501712b083ec8402a
Hersteller: Infineon Technologies
Description: SCR MODULE 4200V 1840A DO200AC
Produkt ist nicht verfügbar
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XDPL8220XUMA1 Infineon-XDPL8220-DS-v01_00-EN.pdf?fileId=5546d462584d1d4a015887029bcb5f03
XDPL8220XUMA1
Hersteller: Infineon Technologies
Description: IC LED DRIVER OFFL PWM 16DSO
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 50MHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 85°C (TA)
Internal Switch(s): No
Topology: Flyback
Supplier Device Package: PG-DSO-16
Dimming: PWM
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 24V
auf Bestellung 62500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
231+2.18 EUR
Mindestbestellmenge: 231
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IRGC10B60KB Short_Form_Cat_2016.pdf
Hersteller: Infineon Technologies
Description: IGBT CHIP
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.3V @ 15V, 2A
Supplier Device Package: Die
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Produkt ist nicht verfügbar
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IPLK60R1K5PFD7ATMA1 Infineon-IPLK60R1K5PFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626fc1ce0b016fd787ece33d8f
IPLK60R1K5PFD7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 3.8A THIN-PAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 700mA, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 40µA
Supplier Device Package: PG-TDSON-8-52
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 169 pF @ 400 V
Produkt ist nicht verfügbar
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IPLK60R600PFD7ATMA1 Infineon-IPLK60R600PFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626fc1ce0b016fd749ad343d86
IPLK60R600PFD7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 7A THIN-PAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 80µA
Supplier Device Package: PG-TDSON-8-52
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 400 V
Produkt ist nicht verfügbar
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IPD60R1K5PFD7SAUMA1 Infineon-IPD60R1K5PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e225df2d46744
IPD60R1K5PFD7SAUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 3.6A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 700mA, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 40µA
Supplier Device Package: PG-TO252-3-344
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 169 pF @ 400 V
Produkt ist nicht verfügbar
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XDPS21081XUMA1 Infineon-XDPS21081-DataSheet-v02_00-EN.pdf?fileId=5546d46274692d0e017475eb92cd45db
XDPS21081XUMA1
Hersteller: Infineon Technologies
Description: XDP SMPS TV/PC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -25°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 23kHz ~ 139.1kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.2V ~ 20.5V
Supplier Device Package: PG-DSO-12-20
Synchronous Rectifier: No
Control Features: Current Limit, Dead Time Control, Enable, Frequency Control, Soft Start
Output Phases: 1
Clock Sync: No
Part Status: Not For New Designs
Number of Outputs: 1
Produkt ist nicht verfügbar
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IPDD60R170CFD7XTMA1 Infineon-IPDD60R170CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751c2e907f42b4
IPDD60R170CFD7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 19A HDSOP-10
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 4.9A, 10V
Power Dissipation (Max): 137W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 240µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1016 pF @ 400 V
auf Bestellung 25 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.65 EUR
10+3.47 EUR
Mindestbestellmenge: 4
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KP212K1409XTMA1 Infineon-KP212K1409-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb3201754116ad5a5370
KP212K1409XTMA1
Hersteller: Infineon Technologies
Description: SENSOR 16.68PSIA 4.65V DSOF8
Packaging: Cut Tape (CT)
Features: Amplified Output, Temperature Compensated
Package / Case: 8-SMD Module
Output Type: Analog Voltage
Mounting Type: Surface Mount
Output: 0.4 V ~ 4.65 V
Operating Pressure: 1.45PSI ~ 16.68PSI (10kPa ~ 115kPa)
Pressure Type: Absolute
Accuracy: ±0.3PSI (±2.07kPa)
Operating Temperature: -40°C ~ 125°C (TA)
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: PG-DSOF-8-16
Port Style: No Port
Maximum Pressure: 21.76PSI (150kPa)
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1447 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.44 EUR
5+4.87 EUR
10+4.66 EUR
25+4.4 EUR
50+4.23 EUR
100+4.07 EUR
500+3.75 EUR
Mindestbestellmenge: 4
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KP212F1701XTMA1 Infineon-KP212F1701-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb320175410daf8b536d
KP212F1701XTMA1
Hersteller: Infineon Technologies
Description: SENSOR 16.68PSIA 4.5V DSOF8
Packaging: Cut Tape (CT)
Features: Amplified Output, Temperature Compensated
Package / Case: 8-SMD Module
Output Type: Analog Voltage
Mounting Type: Surface Mount
Output: 0.5 V ~ 4.5 V
Operating Pressure: 2.18PSI ~ 16.68PSI (15kPa ~ 115kPa)
Pressure Type: Absolute
Accuracy: ±0.29PSI (±2kPa)
Operating Temperature: -40°C ~ 125°C (TA)
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: PG-DSOF-8-16
Port Style: No Port
Maximum Pressure: 21.76PSI (150kPa)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 177 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.44 EUR
5+4.87 EUR
10+4.66 EUR
25+4.4 EUR
50+4.23 EUR
100+4.07 EUR
Mindestbestellmenge: 4
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TC377TP96F300SAAKXUMA1 Infineon-AURIX_TC37x_Addendum-DataSheet-v01_00-EN.pdf?fileId=5546d46272e49d2a01730574c782647e
TC377TP96F300SAAKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 6MB FLASH 292LFBGA
Packaging: Cut Tape (CT)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 6MB (6M x 8)
RAM Size: 1.1M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 855 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+49.49 EUR
10+40.11 EUR
25+37.77 EUR
100+35.2 EUR
250+33.97 EUR
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BSZ0910LSATMA1 Infineon-BSZ0910LS-DataSheet-v02_00-EN.pdf?fileId=5546d46271bf4f9201720e9f3ab57cdf
BSZ0910LSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 18A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.1W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
Produkt ist nicht verfügbar
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BSZ0910LSATMA1 Infineon-BSZ0910LS-DataSheet-v02_00-EN.pdf?fileId=5546d46271bf4f9201720e9f3ab57cdf
BSZ0910LSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 18A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.1W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
Produkt ist nicht verfügbar
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TLI4971A050T5UE0001XUMA1 Infineon-TLI4971_25_50_75_120-DataSheet-v01_20-EN.pdf?fileId=5546d462700c0ae6017034d731621b09
TLI4971A050T5UE0001XUMA1
Hersteller: Infineon Technologies
Description: CURRENT SEN HE/OL 50A PG-TISON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Polarization: Unidirectional
Sensitivity: 24mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: DC ~ 240kHz
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 250ns
Sensor Type: Hall Effect, Open Loop
Linearity: ±2.25%
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 50A
Supplier Device Package: PG-TISON-8-5
Grade: Automotive
Part Status: Active
Number of Channels: 1
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLI4971A025T5UE0001XUMA1 Infineon-TLI4971_25_50_75_120-DataSheet-v01_20-EN.pdf?fileId=5546d462700c0ae6017034d731621b09
TLI4971A025T5UE0001XUMA1
Hersteller: Infineon Technologies
Description: CURRENT SEN HE/OL 25A PG-TISON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Polarization: Unidirectional
Sensitivity: 48mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: DC ~ 240kHz
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 250ns
Sensor Type: Hall Effect, Open Loop
Linearity: ±2.25%
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 25A
Supplier Device Package: PG-TISON-8-5
Grade: Automotive
Part Status: Active
Number of Channels: 1
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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LITELDOSBCV33BOARDTOBO1 Infineon-Lite_SBC_Evaluation_Board-Getting_Started-UM-v01_00-EN.pdf?fileId=5546d46267c74c9a0167d02c0bcd1a6a
LITELDOSBCV33BOARDTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR TLE9461-3ES
Packaging: Box
Function: System Basis Chip (SBC)
Type: Interface
Contents: Board(s)
Utilized IC / Part: TLE9461-3ES
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+219.61 EUR
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TT104N08KOFHPSA1 TT104N.pdf
Hersteller: Infineon Technologies
Description: SCR MODULE 800V 160A MODULE
Produkt ist nicht verfügbar
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TT104N12KOFHPSA1 TT104N_Type.pdf
Hersteller: Infineon Technologies
Description: SCR MODULE 1.2KV 160A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 104 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.2 kV
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TT104N12KOFAHPSA1 TT104N_Type.pdf
Hersteller: Infineon Technologies
Description: SCR MODULE 1.2KV 160A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C
Structure: Common Anode - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 104 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.2 kV
Produkt ist nicht verfügbar
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TT104N12KOFKHPSA1 TT104N_Type.pdf
Hersteller: Infineon Technologies
Description: SCR MODULE 1.2KV 160A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C
Structure: Common Cathode - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 104 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.2 kV
Produkt ist nicht verfügbar
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CY2XF33LXC533T download
CY2XF33LXC533T
Hersteller: Infineon Technologies
Description: TSBU
auf Bestellung 173 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.85 EUR
Mindestbestellmenge: 2
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IKW40N65RH5XKSA1 Infineon-IKW40N65RH5-DataSheet-v02_01-EN.pdf?fileId=5546d46275b79adb0175dc16a3d630f8
IKW40N65RH5XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 74A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/165ns
Switching Energy: 160µJ (on), 120µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 250 W
Produkt ist nicht verfügbar
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IKW40N65H5 Part_Number_Guide_Web.pdf
IKW40N65H5
Hersteller: Infineon Technologies
Description: IGBT 650V 74A 255W PG-TO247-3
Produkt ist nicht verfügbar
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BSP324L6327 INFNS13390-1.pdf?t.download=true&u=5oefqw
BSP324L6327
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 25Ohm @ 170mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 94µA
Supplier Device Package: PG-SOT223-4-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 154 pF @ 25 V
auf Bestellung 80249 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1039+0.47 EUR
Mindestbestellmenge: 1039
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BSP324 E6327 BSP324.pdf
BSP324 E6327
Hersteller: Infineon Technologies
Description: MOSFET N-CH 400V 170MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 25Ohm @ 170mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 94µA
Supplier Device Package: PG-SOT223-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 154 pF @ 25 V
Produkt ist nicht verfügbar
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BCR401RE6433HTMA1 Infineon-BCR401R-DS-v01_01-EN.pdf?fileId=5546d46262b31d2e0162f27265483c8b
BCR401RE6433HTMA1
Hersteller: Infineon Technologies
Description: IC LED DRVR LIN 60MA SOT143R-3D
Packaging: Bulk
Package / Case: SOT-143R
Voltage - Output: 16V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 60mA
Internal Switch(s): Yes
Supplier Device Package: PG-SOT-143R-3D
Voltage - Supply (Min): 1.2V
Voltage - Supply (Max): 18V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.19 EUR
Mindestbestellmenge: 2000
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TLE49452LHALA1 TLE49x5L.pdf
TLE49452LHALA1
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH BIPOLAR 3SSO
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Output Type: Open Collector
Polarization: North Pole, South Pole
Function: Bipolar Switch
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 3.8V ~ 24V
Technology: Hall Effect
Sensing Range: ±3mT Trip, ±6mT Release
Current - Output (Max): 100mA
Current - Supply (Max): 8mA
Test Condition: 25°C
Part Status: Last Time Buy
Produkt ist nicht verfügbar
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1ED3860MU12MXUMA1 Infineon-1ED38x0Mc12M-DataSheet-v02_00-EN.pdf?fileId=5546d46274cf54d50174d97c260c1f5d
1ED3860MU12MXUMA1
Hersteller: Infineon Technologies
Description: DIGITAL ISO 1CH GT DVR DSO16-28
Packaging: Tape & Reel (TR)
Package / Case: 16-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6A
Technology: Magnetic Coupling
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-16-28
Rise / Fall Time (Typ): 15ns, 15ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 13V ~ 25V
Produkt ist nicht verfügbar
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1ED3860MU12MXUMA1 Infineon-1ED38x0Mc12M-DataSheet-v02_00-EN.pdf?fileId=5546d46274cf54d50174d97c260c1f5d
1ED3860MU12MXUMA1
Hersteller: Infineon Technologies
Description: DIGITAL ISO 1CH GT DVR DSO16-28
Packaging: Cut Tape (CT)
Package / Case: 16-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6A
Technology: Magnetic Coupling
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-16-28
Rise / Fall Time (Typ): 15ns, 15ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 13V ~ 25V
Produkt ist nicht verfügbar
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XDPS21081XUMA1 Infineon-XDPS21081-DataSheet-v02_00-EN.pdf?fileId=5546d46274692d0e017475eb92cd45db
XDPS21081XUMA1
Hersteller: Infineon Technologies
Description: XDP SMPS TV/PC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -25°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 23kHz ~ 139.1kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.2V ~ 20.5V
Supplier Device Package: PG-DSO-12-20
Synchronous Rectifier: No
Control Features: Current Limit, Dead Time Control, Enable, Frequency Control, Soft Start
Output Phases: 1
Clock Sync: No
Part Status: Not For New Designs
Number of Outputs: 1
Produkt ist nicht verfügbar
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TLE5027CE6747HAMA3 TLE5027C_PB_7-2-13.pdf
Hersteller: Infineon Technologies
Description: SENSOR MAGNETORESISTIVE PWM 3SIP
Produkt ist nicht verfügbar
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TLE5027CE6747HAMA4 TLE5027C_PB_7-2-13.pdf
Hersteller: Infineon Technologies
Description: SENSOR MAGNETORESISTIVE PWM 3SIP
Packaging: Tape & Box (TB)
Package / Case: 3-SSIP Module
Output Type: PWM
Mounting Type: Through Hole
Axis: X, Y, Z
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Magnetoresistive
Supplier Device Package: PG-SSO-3-92
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE5027CXAAD47AGXAMA1
TLE5027CXAAD47AGXAMA1
Hersteller: Infineon Technologies
Description: SENSOR MAGNETORESISTIVE PWM 3SIP
Packaging: Tape & Box (TB)
Package / Case: 3-SSIP Module
Output Type: PWM
Mounting Type: Through Hole
Axis: X, Y, Z
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Magnetoresistive
Supplier Device Package: PG-SSO-3-92
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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FF150R12KE3B8BDLA1 INFNS28343-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: AG-62MM
Part Status: Active
Current - Collector (Ic) (Max): 225 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
auf Bestellung 33 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+130.99 EUR
Mindestbestellmenge: 4
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FF150R12ME3G INFNS28345-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 200A 695W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 695 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 10.5 nF @ 25 V
auf Bestellung 351 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+206.05 EUR
Mindestbestellmenge: 3
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FF150R12ME3GBOSA1 Infineon-FF150R12ME3G-DS-v02_02-en_de.pdf?fileId=db3a304412b407950112b43461c76021
FF150R12ME3GBOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 200A 695W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 695 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 10.5 nF @ 25 V
auf Bestellung 783 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+196.52 EUR
Mindestbestellmenge: 3
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FF150R12KE3B8BOSA1
Hersteller: Infineon Technologies
Description: MOD IGBT LOW PWR ECONO2-6
Produkt ist nicht verfügbar
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PBL38630/2SOTR2B
Hersteller: Infineon Technologies
Description: FLEXISLIC SLIC
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
116+4.35 EUR
Mindestbestellmenge: 116
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BFP410H6327XTSA1 Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920
BFP410H6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 5V 25GHZ SOT-343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21.5dB
Power - Max: 150mW
Current - Collector (Ic) (Max): 40mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 13mA, 2V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.2dB @ 2GHz
Supplier Device Package: PG-SOT343-4-2
Part Status: Active
Produkt ist nicht verfügbar
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BFP410H6327XTSA1 Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920
BFP410H6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 5V 25GHZ SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21.5dB
Power - Max: 150mW
Current - Collector (Ic) (Max): 40mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 13mA, 2V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.2dB @ 2GHz
Supplier Device Package: PG-SOT343-4-2
Part Status: Active
auf Bestellung 2888 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
29+0.62 EUR
42+0.43 EUR
47+0.38 EUR
100+0.33 EUR
250+0.3 EUR
500+0.29 EUR
1000+0.28 EUR
Mindestbestellmenge: 29
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TT142N12KOFHPSA1 TT142N.pdf
Hersteller: Infineon Technologies
Description: SCR MODULE 1.2KV 230A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4800A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 142 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 1.2 kV
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+167.42 EUR
Mindestbestellmenge: 3
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MB4239PFV-GT-BND-ER-6E1
Hersteller: Infineon Technologies
Description: IC PWR SUPPLY MONITOR 16SSOP
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MB4237PFV-GT-BND-ERE1
Hersteller: Infineon Technologies
Description: IC PWR SUPPLY MONITOR 24SSOP
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MB3789APFV-GT-BND-ERE1
Hersteller: Infineon Technologies
Description: IC SUPERVISOR ANALOG 16SSOP
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB4243PFV-GT-BNDE1
Hersteller: Infineon Technologies
Description: IC POWER MANAGEMENT 48LQFP
Packaging: Tray
Produkt ist nicht verfügbar
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TLE493D-W2B6 3D-MS2GO Infineon-Infineon-3DMS2GO_TLE493D-W2B6-UM-v01_01-EN-UserManual-v01_01-EN.pdf?fileId=5546d462636cc8fb016418342fea3f54
TLE493D-W2B6 3D-MS2GO
Hersteller: Infineon Technologies
Description: TLE493D-W2B6 3D MAG SENSOR 2GO
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
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TLE493DA2B6MS2GOTOBO1 Infineon-TLE493D-A2B6-UM-v01_01-UserManual-v01_11-EN.pdf?fileId=5546d46262b31d2e01633b4bba5f3c5a
TLE493DA2B6MS2GOTOBO1
Hersteller: Infineon Technologies
Description: SENSOR HALL EFFECT I2C 2GO
Packaging: Bulk
Interface: I2C, Serial
Contents: Board(s)
Voltage - Supply: 2.8V ~ 3.5V
Sensor Type: Magnetic, Linear, Rotary Position
Utilized IC / Part: TLE493D-A2B6
Supplied Contents: Board(s)
Sensing Range: ±160mT ~ ±230mT
Produkt ist nicht verfügbar
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TLE493DA1B6HTSA1 TLE493D-A1B6_Rev1.2_4-9-19.pdf
TLE493DA1B6HTSA1
Hersteller: Infineon Technologies
Description: IC 3D MAGN SENSOR TSOP6-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.9V ~ 3.5V
Technology: Hall Effect
Sensing Range: ±60mT
Supplier Device Package: PG-TSOP-6-6-5
Produkt ist nicht verfügbar
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IPU60R2K1CEAKMA1 Infineon-IPU60R2K1CE-DS-v02_02-EN.pdf?fileId=5546d46249be182c0149c7e409461eac
IPU60R2K1CEAKMA1
Hersteller: Infineon Technologies
Description: CONSUMER
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 760mA, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
Produkt ist nicht verfügbar
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CYRF6936-XC
Hersteller: Infineon Technologies
Description: IC SOC WIRELESS USB
Packaging: Bulk
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ESD145B1W01005E6327XTSA1 Infineon-New+generation+ESD+protection+diodes-PB-v01_00-EN.pdf?fileId=5546d4625cc9456a015d0ccb7b9a57e3
ESD145B1W01005E6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 18VWM 5VC P/PGWLL22
Packaging: Tape & Reel (TR)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: RF Antenna
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 18V (Max)
Supplier Device Package: P/PG-WLL-2-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 18.5V
Voltage - Clamping (Max) @ Ipp: 5V (Typ)
Power - Peak Pulse: 21W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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ESD145B1W01005E6327XTSA1 Infineon-New+generation+ESD+protection+diodes-PB-v01_00-EN.pdf?fileId=5546d4625cc9456a015d0ccb7b9a57e3
ESD145B1W01005E6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 18VWM 5VC P/PGWLL22
Packaging: Cut Tape (CT)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: RF Antenna
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 18V (Max)
Supplier Device Package: P/PG-WLL-2-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 18.5V
Voltage - Clamping (Max) @ Ipp: 5V (Typ)
Power - Peak Pulse: 21W
Power Line Protection: No
Part Status: Active
auf Bestellung 2714 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
91+0.19 EUR
139+0.13 EUR
325+0.054 EUR
500+0.051 EUR
1000+0.046 EUR
Mindestbestellmenge: 91
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IMBG120R220M1HXTMA1 Infineon-IMBG120R220M1H-DataSheet-v02_01-EN.pdf?fileId=5546d462749a7c2d0174b0ecffdf326f
IMBG120R220M1HXTMA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 1.2KV 13A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 294mOhm @ 4A, 18V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1.6mA
Supplier Device Package: PG-TO263-7-12
Part Status: Active
Vgs (Max): +18V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 800 V
auf Bestellung 1044 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.4 EUR
10+6.97 EUR
100+5.04 EUR
500+4.21 EUR
Mindestbestellmenge: 2
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