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TLT807B0EPVXUMA1 TLT807B0EPVXUMA1 Infineon Technologies Infineon-TLT807B0EPV-DS-v01_00-EN.pdf?fileId=5546d4625bd71aa0015c10aadbe33e93 Description: IC REG LIN POS ADJ 70MA TSDSO14
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 70mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 36 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-TSDSO-14-1
Voltage - Output (Max): 20V
Voltage - Output (Min/Fixed): 1.2V
Control Features: Current Limit, Enable
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 70mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Qualification: AEC-Q100
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10+3.26 EUR
25+3.08 EUR
100+2.62 EUR
250+2.46 EUR
500+2.15 EUR
1000+1.78 EUR
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XC2265N40F80LAAKXUMA1 XC2265N40F80LAAKXUMA1 Infineon Technologies INFNS28075-1.pdf?t.download=true&u=5oefqw Description: IC MCU 16/32B 320KB FLSH 100LQFP
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IPD90P04P4L04ATMA2 IPD90P04P4L04ATMA2 Infineon Technologies Infineon-IPD90P04P4L-04-DataSheet-v01_02-EN.pdf?fileId=db3a30432f69f146012f7829059b2dee Description: MOSFET P-CH 40V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 90A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3-313
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V
Qualification: AEC-Q101
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100+2.05 EUR
500+1.65 EUR
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BSC052N08NS5ATMA1 BSC052N08NS5ATMA1 Infineon Technologies Infineon-BSC052N08NS5-DS-v02_00-EN.pdf?fileId=5546d4624ad04ef9014ae38fc94f2b40 Description: MOSFET N-CH 80V 95A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 47.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 49µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V
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IPB180N03S4L-01 IPB180N03S4L-01 Infineon Technologies INFNS14088-1.pdf?t.download=true&u=5oefqw Description: IPB180N03 - 20V-40V N-CHANNEL AU
Packaging: Bulk
Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 140µA
Supplier Device Package: PG-TO263-7-3-10
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 239 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17600 pF @ 25 V
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SPB80N03S203GATMA1 SPB80N03S203GATMA1 Infineon Technologies SP%28I%2CP%2CB%2980N03S2-03.pdf Description: MOSFET N-CH 30V 80A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 25 V
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IPB180N03S4L-H0 IPB180N03S4L-H0 Infineon Technologies INFNS14089-1.pdf?t.download=true&u=5oefqw Description: IPB180N03 - 20V-40V N-CHANNEL AU
Packaging: Bulk
Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 0.95mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 200µA
Supplier Device Package: PG-TO263-7-3-10
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
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IPI80N03S4L-03 IPI80N03S4L-03 Infineon Technologies INFNS10791-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 80A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 90µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9750 pF @ 25 V
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IPI80N03S4L-04 IPI80N03S4L-04 Infineon Technologies INFNS14810-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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IPB80N03S4L-03 IPB80N03S4L-03 Infineon Technologies INFNS14810-1.pdf?t.download=true&u=5oefqw Description: IPB80N03 - 20V-40V N-CHANNEL AUT
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 80A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 45µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
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IPP023N04NGHKSA1 Infineon Technologies Infineon-IPB023N04N-DS-v01_02-en.pdf?fileId=db3a30432313ff5e01239f000f097121 Description: MOSFET N-CH 40V 90A TO220-3
Packaging: Tube
Part Status: Active
Produkt ist nicht verfügbar
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IPI023NE7N3G IPI023NE7N3G Infineon Technologies INFN-S-A0001299495-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 273µA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 37.5 V
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BAT24-02LSE6327 BAT24-02LSE6327 Infineon Technologies INFNS15702-1.pdf?t.download=true&u=5oefqw Description: DIODE SCHOTT 4V 110MA TSSLP-2-1
Packaging: Bulk
Package / Case: 0201 (0603 Metric)
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.23pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-TSSLP-2-1
Part Status: Active
Current - Max: 110 mA
Power Dissipation (Max): 100 mW
Produkt ist nicht verfügbar
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IRFI4019H-117PXKMA1 IRFI4019H-117PXKMA1 Infineon Technologies irfi4019h-117p.pdf?fileId=5546d462533600a401535623d74d1f6f Description: MOSFET 2N-CH 150V 8.7A TO220-5
Packaging: Tube
Package / Case: TO-220-5 Full Pack, Formed Leads
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 18W (Tc)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 25V
Rds On (Max) @ Id, Vgs: 95mOhm @ 5.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 4.9V @ 50µA
Supplier Device Package: TO-220-5 Full-Pak
Part Status: Active
auf Bestellung 998 Stücke:
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100+2.48 EUR
500+2.02 EUR
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TLE4945LHALA1 TLE4945LHALA1 Infineon Technologies TLE49x5L.pdf Description: MAGNETIC SWITCH BIPOLAR 3SSO
Packaging: Tape & Box (TB)
Features: Temperature Compensated
Output Type: Open Collector
Polarization: North Pole, South Pole
Function: Bipolar Switch
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 3.8V ~ 24V
Technology: Hall Effect
Sensing Range: ±6mT Trip, ±10mT Release
Current - Output (Max): 100mA
Current - Supply (Max): 8mA
Test Condition: 25°C
Part Status: Last Time Buy
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TLE4945LHALA1 TLE4945LHALA1 Infineon Technologies TLE49x5L.pdf Description: MAGNETIC SWITCH BIPOLAR 3SSO
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Output Type: Open Collector
Polarization: North Pole, South Pole
Function: Bipolar Switch
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 3.8V ~ 24V
Technology: Hall Effect
Sensing Range: ±6mT Trip, ±10mT Release
Current - Output (Max): 100mA
Current - Supply (Max): 8mA
Test Condition: 25°C
Part Status: Last Time Buy
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IPN50R3K0CE Infineon Technologies Infineon-IPN50R3K0CE-DS-v02_01-EN.pdf?fileId=5546d46253f6505701547adae0c05ad5 Description: SMALL SIGNAL FIELD-EFFECT TRANSI
Packaging: Bulk
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 400mA, 13V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 84 pF @ 100 V
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SP001461194 Infineon Technologies Infineon-IPN50R2K0CE-DS-v02_01-EN.pdf?fileId=5546d46253f6505701547ac89b1f5aaa Description: IPN50R2K0CEATMA1 - MOSFET
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IPN50R950CE Infineon Technologies INFN-S-A0002272334-1.pdf?t.download=true&u=5oefqw Description: COOLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-SOT223-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V
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TC333LP32F200FAAKXUMA1 TC333LP32F200FAAKXUMA1 Infineon Technologies 4_cip10529.pdf Description: IC MCU 32BIT 2MB FLASH 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 248K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: DMA, I2S, PWM, WDT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-TQFP-100-23
Part Status: Active
DigiKey Programmable: Not Verified
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IGP40N65H5 IGP40N65H5 Infineon Technologies INFN-S-A0001300424-1.pdf?t.download=true&u=5oefqw Description: IGP40N65 - DISCRETE IGBT WITHOUT
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO220-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/165ns
Switching Energy: 390µJ (on), 120µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 250 W
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BSL302SNL6327 BSL302SNL6327 Infineon Technologies INFNS16736-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: PG-TSOP6-6-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V
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BSL302SNH6327XTSA1 BSL302SNH6327XTSA1 Infineon Technologies BSL302SN.pdf Description: MOSFET N-CH 30V 7.1A TSOP-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: PG-TSOP6-6
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V
Qualification: AEC-Q101
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BSL302SNH6327XTSA1 BSL302SNH6327XTSA1 Infineon Technologies BSL302SN.pdf Description: MOSFET N-CH 30V 7.1A TSOP-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: PG-TSOP6-6
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V
Qualification: AEC-Q101
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IRFR540ZTRLPBF IRFR540ZTRLPBF Infineon Technologies irfr540zpbf.pdf?fileId=5546d462533600a4015356325b2c2102 Description: MOSFET N-CH 100V 35A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 28.5mOhm @ 21A, 10V
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 25 V
auf Bestellung 23350 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.61 EUR
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IRFR540ZTRLPBF IRFR540ZTRLPBF Infineon Technologies irfr540zpbf.pdf?fileId=5546d462533600a4015356325b2c2102 Description: MOSFET N-CH 100V 35A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 28.5mOhm @ 21A, 10V
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 25 V
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IRSM515-044DA-INF Infineon Technologies IRSDS19334-1.pdf?t.download=true&u=5oefqw Description: IC HALF BRIDGE DRIVER 3A 23DIP
Packaging: Bulk
Features: Bootstrap Circuit
Package / Case: 23-DIP Module (0.573", 14.55mm)
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 800mOhm LS, 800mOhm HS
Applications: AC Motors
Current - Output / Channel: 3A
Current - Peak Output: 15A
Technology: MOSFET (Metal Oxide)
Voltage - Load: 200V (Max)
Supplier Device Package: 23-DIP
Fault Protection: UVLO
Load Type: Inductive
Part Status: Active
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BTS5234G BTS5234G Infineon Technologies INFNS05973-1.pdf?t.download=true&u=5oefqw Description: HALF-BRIDGE PERIPHERAL DRIVER
Packaging: Bulk
Part Status: Active
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BTS5234GXUMA1 BTS5234GXUMA1 Infineon Technologies BTS5234G.pdf Description: IC PWR SWITCH N-CHAN 1:1 DSO-20
Packaging: Bulk
Features: Auto Restart, Status Flag
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 45mOhm
Input Type: Non-Inverting
Voltage - Load: 4.5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-20-21
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Obsolete
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IGD10N65T6ARMA1 IGD10N65T6ARMA1 Infineon Technologies Infineon-IGD10N65T6-DataSheet-v02_03-EN.pdf?fileId=5546d462766a0c1701766c359b640dde Description: IGBT TRENCH FS 650V 23A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 8.5A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/106ns
Switching Energy: 200µJ (on), 70µJ (off)
Test Condition: 400V, 8.5A, 47Ohm, 15V
Gate Charge: 27 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 42.5 A
Power - Max: 75 W
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IGD10N65T6ARMA1 IGD10N65T6ARMA1 Infineon Technologies Infineon-IGD10N65T6-DataSheet-v02_03-EN.pdf?fileId=5546d462766a0c1701766c359b640dde Description: IGBT TRENCH FS 650V 23A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 8.5A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/106ns
Switching Energy: 200µJ (on), 70µJ (off)
Test Condition: 400V, 8.5A, 47Ohm, 15V
Gate Charge: 27 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 42.5 A
Power - Max: 75 W
Produkt ist nicht verfügbar
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S2GO3DTLE493DW2B6A0TOBO1 S2GO3DTLE493DW2B6A0TOBO1 Infineon Technologies shield2go-boards-and-my-iot-adapter-fast-flexible-and-easy-prototyping-for-iot-applications-5546d4626b2d8e69016b503f3cce0810 Description: TLE493DW2B6 3DSENSE SHIELD2GO
Packaging: Box
Function: Magnetic Hall Effect
Type: Sensor
Contents: Board(s)
Utilized IC / Part: TLE493D-W2B6
Platform: Shield2Go
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MB90223PF-GT-269-BNDE1 Infineon Technologies Description: IC MCU 16BIT 64KB MROM 120PQFP
Packaging: Tray
Package / Case: 120-BQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 3K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16F
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: EBI/EMI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 120-QFP (28x28)
Part Status: Obsolete
Number of I/O: 102
DigiKey Programmable: Not Verified
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BSC0803LSATMA1 BSC0803LSATMA1 Infineon Technologies Infineon-BSC0803LS-DataSheet-v02_01-EN.pdf?fileId=5546d462700c0ae601708712944b1d3c Description: MOSFET N-CH 100V 10A/44A TDSON-6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 22A, 10V
Power Dissipation (Max): 2.5W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 23µA
Supplier Device Package: PG-TDSON-8-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
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BSC0803LSATMA1 BSC0803LSATMA1 Infineon Technologies Infineon-BSC0803LS-DataSheet-v02_01-EN.pdf?fileId=5546d462700c0ae601708712944b1d3c Description: MOSFET N-CH 100V 10A/44A TDSON-6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 22A, 10V
Power Dissipation (Max): 2.5W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 23µA
Supplier Device Package: PG-TDSON-8-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
auf Bestellung 20585 Stücke:
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BAS40E6433HTMA1 BAS40E6433HTMA1 Infineon Technologies INFNS19700-1.pdf?t.download=true&u=5oefqw Description: DIODE SCHOTTKY 40V 120MA PGSOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 120mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
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FP50R12W2T7B11BOMA1 FP50R12W2T7B11BOMA1 Infineon Technologies Infineon-FP50R12W2T7_B11-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170f186fc3272fe Description: LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B-2
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 8 µA
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
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IM393M6FPXKLA1 IM393M6FPXKLA1 Infineon Technologies Infineon-IM393-M6FP-DataSheet-v02_00-EN.pdf?fileId=5546d46273a5366f01740afd4fc371ae Description: MODULE IGBT 600V 10A 26PWRSIP
Packaging: Tube
Package / Case: 26-PowerSIP Module, 22 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 10 A
Voltage: 600 V
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IM393S6FPXKLA1 IM393S6FPXKLA1 Infineon Technologies Infineon-IM393-S6FP-DataSheet-v02_00-EN.pdf?fileId=5546d46273a5366f01740b067a4071b1 Description: MODULE IGBT 600V 6A 26PWRSIP
Packaging: Tube
Package / Case: 26-PowerSIP Module, 22 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 6 A
Voltage: 600 V
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IM393L6FPXKLA1 IM393L6FPXKLA1 Infineon Technologies Infineon-IM393-L6FP-DataSheet-v02_00-EN.pdf?fileId=5546d46273a5366f01740b0683bb71b4 Description: MODULE IGBT 600V 15A 26PWRSIP
Packaging: Tube
Package / Case: 26-PowerSIP Module, 22 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 15 A
Voltage: 600 V
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IM393X6FPXKLA1 IM393X6FPXKLA1 Infineon Technologies Infineon-IM393-X6FP-DataSheet-v02_00-EN.pdf?fileId=5546d46273a5366f01740b06985471b7 Description: MODULE IGBT 600V 20A 26PWRSIP
Packaging: Tube
Package / Case: 26-PowerSIP Module, 22 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 20 A
Voltage: 600 V
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IFF600B12ME4S8PB11BOSA1 Infineon Technologies Infineon-IFF600B12ME4S8P_B11-DS-v03_01-EN.pdf?fileId=5546d462602a9dc801602ab2feb70027 Description: IGBT MOD 1200V 600A 20MW ECONO
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-5
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
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FF600R12ME4EB11BPSA1 FF600R12ME4EB11BPSA1 Infineon Technologies Description: MEDIUM POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-3
IGBT Type: Trench Field Stop
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
Produkt ist nicht verfügbar
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TLE4296GV50HTSA1 TLE4296GV50HTSA1 Infineon Technologies INFNS12042-1.pdf?t.download=true&u=5oefqw Description: IC REG LIN 5V 30MA PG-SCT595-5
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 30mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 170 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5
Voltage - Output (Min/Fixed): 5V
Control Features: Inhibit
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.3V @ 20mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 5.2 mA
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE4295GV26HTSA1 TLE4295GV26HTSA1 Infineon Technologies Infineon-TLE4295-DS-v01_40-EN.pdf?fileId=5546d46258fc0bc101595f8575241f74 Description: IC REG LIN 2.6V 30MA PG-SCT595-5
Packaging: Bulk
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 30mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5
Voltage - Output (Min/Fixed): 2.6V
Control Features: Power Fail
Grade: Automotive
Part Status: Obsolete
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.4V @ 20mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 4 mA
Qualification: AEC-Q100
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TLE4295GV30HTSA1 TLE4295GV30HTSA1 Infineon Technologies Infineon-TLE4295-DS-v01_40-EN.pdf?fileId=5546d46258fc0bc101595f8575241f74 Description: IC REG LIN 3V 30MA PG-SCT595-5
Packaging: Bulk
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 30mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5
Voltage - Output (Min/Fixed): 3V
Control Features: Power Fail
Grade: Automotive
Part Status: Last Time Buy
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.4V @ 20mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 4 mA
Qualification: AEC-Q100
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TLE4296GV30HTSA1 TLE4296GV30HTSA1 Infineon Technologies INFNS12042-1.pdf?t.download=true&u=5oefqw Description: IC REG LIN 3V 30MA PG-SCT595-5
Packaging: Bulk
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 30mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 170 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5
Voltage - Output (Min/Fixed): 3V
Control Features: Inhibit
Grade: Automotive
Part Status: Obsolete
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.3V @ 20mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 4.5 mA
Qualification: AEC-Q100
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TLS105B0MBHTSA1 TLS105B0MBHTSA1 Infineon Technologies Infineon-TLS105B0MB-DS-v01_00-EN.pdf?fileId=5546d46261ff5777016200cc39952f83 Description: IC REG LIN POS ADJ 120MA SCT595
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 120mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 75 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5
Voltage - Output (Max): 20V
Voltage - Output (Min/Fixed): 2V
Control Features: Enable
Grade: Automotive
Part Status: Active
PSRR: 100dB (100Hz)
Voltage Dropout (Max): 0.45V @ 50mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 5.5 mA
Qualification: AEC-Q100
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13+1.44 EUR
18+1.03 EUR
25+0.93 EUR
100+0.82 EUR
250+0.77 EUR
500+0.73 EUR
1000+0.71 EUR
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TLE4286GHTSA1 TLE4286GHTSA1 Infineon Technologies Infineon-TLE4286G-DS-v02_30-EN.pdf?fileId=5546d46258fc0bc101595fa0a3b01fca Description: IC REG LIN 5V 15MA PG-SCT595-5
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 15mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5
Voltage - Output (Min/Fixed): 5V
Control Features: Inhibit
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 1.1V @ 10mA
Protection Features: Over Temperature, Short Circuit
Qualification: AEC-Q100
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TLE4295GV33HTSA1 TLE4295GV33HTSA1 Infineon Technologies Infineon-TLE4295-DS-v01_40-EN.pdf?fileId=5546d46258fc0bc101595f8575241f74 Description: IC REG LIN 3.3V 30MA PG-SCT595-5
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 30mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5
Voltage - Output (Min/Fixed): 3.3V
Control Features: Power Fail
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.4V @ 20mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 4 mA
Qualification: AEC-Q100
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10+1.92 EUR
13+1.39 EUR
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TLE4296GV33HTSA1 TLE4296GV33HTSA1 Infineon Technologies INFNS12042-1.pdf?t.download=true&u=5oefqw Description: IC REG LIN 3.3V 30MA PG-SCT595-5
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 30mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 170 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5
Voltage - Output (Min/Fixed): 3.3V
Control Features: Inhibit
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.3V @ 20mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 5.2 mA
Qualification: AEC-Q100
auf Bestellung 32 Stücke:
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15+1.25 EUR
25+1.13 EUR
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IRF135S203 IRF135S203 Infineon Technologies irf135s203.pdf?fileId=5546d462533600a4015364c38ddf29b1 Description: MOSFET N-CH 135V 129A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 129A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 77A, 10V
Power Dissipation (Max): 441W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 135 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9700 pF @ 50 V
auf Bestellung 800 Stücke:
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IRF135S203 IRF135S203 Infineon Technologies irf135s203.pdf?fileId=5546d462533600a4015364c38ddf29b1 Description: MOSFET N-CH 135V 129A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 129A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 77A, 10V
Power Dissipation (Max): 441W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 135 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9700 pF @ 50 V
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PEF 22554 HT V2.1 PEF 22554 HT V2.1 Infineon Technologies PEF22554_V3.1_PB_Rev3.0.pdf Description: IC TELECOM INTERFACE 144TQFP
Produkt ist nicht verfügbar
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BB669 BB669 Infineon Technologies INFNS15707-1.pdf?t.download=true&u=5oefqw Description: VARIABLE CAPACITANCE DIODE
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C
Capacitance @ Vr, F: 2.9pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SOD323-2-1
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 20.9
auf Bestellung 49000 Stücke:
Lieferzeit 10-14 Tag (e)
15000+0.03 EUR
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BB669E7904 BB669E7904 Infineon Technologies INFNS15707-1.pdf?t.download=true&u=5oefqw Description: VARIABLE CAPACITANCE DIODE
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C
Capacitance @ Vr, F: 2.9pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SOD323-2-1
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 20.9
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BB659CH7903XTMA1 BB659CH7903XTMA1 Infineon Technologies bb639c_bb659cseries.pdf Description: DIODE VAR CAP 30V 20MA SCD80
Packaging: Bulk
Package / Case: SC-80
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.75pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: SCD-80
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 15.3
auf Bestellung 209478 Stücke:
Lieferzeit 10-14 Tag (e)
8510+0.07 EUR
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BB659H7902 BB659H7902 Infineon Technologies INFNS15706-1.pdf?t.download=true&u=5oefqw Description: VARIABLE CAPACITANCE DIODE
Packaging: Bulk
Package / Case: SC-80
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C
Capacitance @ Vr, F: 2.9pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SCD80-2
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 14.7
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12000+0.05 EUR
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BSM50GP60B2BOSA1 Infineon Technologies INFNS12611-1.pdf?t.download=true&u=5oefqw Description: IGBT MODULE
Packaging: Bulk
Part Status: Active
auf Bestellung 302 Stücke:
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6+89.06 EUR
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IPA50R299CPXKSA1 IPA50R299CPXKSA1 Infineon Technologies IPA50R299CP.pdf Description: MOSFET N-CH 550V 12A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO220-3-31
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V
auf Bestellung 31927 Stücke:
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315+1.54 EUR
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TLT807B0EPVXUMA1 Infineon-TLT807B0EPV-DS-v01_00-EN.pdf?fileId=5546d4625bd71aa0015c10aadbe33e93
TLT807B0EPVXUMA1
Hersteller: Infineon Technologies
Description: IC REG LIN POS ADJ 70MA TSDSO14
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 70mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 36 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-TSDSO-14-1
Voltage - Output (Max): 20V
Voltage - Output (Min/Fixed): 1.2V
Control Features: Current Limit, Enable
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 70mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Qualification: AEC-Q100
auf Bestellung 2618 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.63 EUR
10+3.26 EUR
25+3.08 EUR
100+2.62 EUR
250+2.46 EUR
500+2.15 EUR
1000+1.78 EUR
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XC2265N40F80LAAKXUMA1 INFNS28075-1.pdf?t.download=true&u=5oefqw
XC2265N40F80LAAKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 16/32B 320KB FLSH 100LQFP
Produkt ist nicht verfügbar
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IPD90P04P4L04ATMA2 Infineon-IPD90P04P4L-04-DataSheet-v01_02-EN.pdf?fileId=db3a30432f69f146012f7829059b2dee
IPD90P04P4L04ATMA2
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 90A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3-313
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3441 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.35 EUR
10+2.98 EUR
100+2.05 EUR
500+1.65 EUR
1000+1.53 EUR
Mindestbestellmenge: 5
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BSC052N08NS5ATMA1 Infineon-BSC052N08NS5-DS-v02_00-EN.pdf?fileId=5546d4624ad04ef9014ae38fc94f2b40
BSC052N08NS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 95A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 47.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 49µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V
auf Bestellung 11746 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.75 EUR
10+2.19 EUR
100+1.82 EUR
500+1.56 EUR
Mindestbestellmenge: 7
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IPB180N03S4L-01 INFNS14088-1.pdf?t.download=true&u=5oefqw
IPB180N03S4L-01
Hersteller: Infineon Technologies
Description: IPB180N03 - 20V-40V N-CHANNEL AU
Packaging: Bulk
Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 140µA
Supplier Device Package: PG-TO263-7-3-10
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 239 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17600 pF @ 25 V
Produkt ist nicht verfügbar
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SPB80N03S203GATMA1 SP%28I%2CP%2CB%2980N03S2-03.pdf
SPB80N03S203GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 80A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 25 V
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
214+2.27 EUR
Mindestbestellmenge: 214
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IPB180N03S4L-H0 INFNS14089-1.pdf?t.download=true&u=5oefqw
IPB180N03S4L-H0
Hersteller: Infineon Technologies
Description: IPB180N03 - 20V-40V N-CHANNEL AU
Packaging: Bulk
Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 0.95mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 200µA
Supplier Device Package: PG-TO263-7-3-10
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
Produkt ist nicht verfügbar
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IPI80N03S4L-03 INFNS10791-1.pdf?t.download=true&u=5oefqw
IPI80N03S4L-03
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 80A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 90µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9750 pF @ 25 V
Produkt ist nicht verfügbar
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IPI80N03S4L-04 INFNS14810-1.pdf?t.download=true&u=5oefqw
IPI80N03S4L-04
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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IPB80N03S4L-03 INFNS14810-1.pdf?t.download=true&u=5oefqw
IPB80N03S4L-03
Hersteller: Infineon Technologies
Description: IPB80N03 - 20V-40V N-CHANNEL AUT
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 80A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 45µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
Produkt ist nicht verfügbar
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IPP023N04NGHKSA1 Infineon-IPB023N04N-DS-v01_02-en.pdf?fileId=db3a30432313ff5e01239f000f097121
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 90A TO220-3
Packaging: Tube
Part Status: Active
Produkt ist nicht verfügbar
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IPI023NE7N3G INFN-S-A0001299495-1.pdf?t.download=true&u=5oefqw
IPI023NE7N3G
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 273µA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 37.5 V
auf Bestellung 5746 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
143+3.71 EUR
Mindestbestellmenge: 143
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BAT24-02LSE6327 INFNS15702-1.pdf?t.download=true&u=5oefqw
BAT24-02LSE6327
Hersteller: Infineon Technologies
Description: DIODE SCHOTT 4V 110MA TSSLP-2-1
Packaging: Bulk
Package / Case: 0201 (0603 Metric)
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.23pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-TSSLP-2-1
Part Status: Active
Current - Max: 110 mA
Power Dissipation (Max): 100 mW
Produkt ist nicht verfügbar
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IRFI4019H-117PXKMA1 irfi4019h-117p.pdf?fileId=5546d462533600a401535623d74d1f6f
IRFI4019H-117PXKMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 150V 8.7A TO220-5
Packaging: Tube
Package / Case: TO-220-5 Full Pack, Formed Leads
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 18W (Tc)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 25V
Rds On (Max) @ Id, Vgs: 95mOhm @ 5.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 4.9V @ 50µA
Supplier Device Package: TO-220-5 Full-Pak
Part Status: Active
auf Bestellung 998 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.40 EUR
50+2.64 EUR
100+2.48 EUR
500+2.02 EUR
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TLE4945LHALA1 TLE49x5L.pdf
TLE4945LHALA1
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH BIPOLAR 3SSO
Packaging: Tape & Box (TB)
Features: Temperature Compensated
Output Type: Open Collector
Polarization: North Pole, South Pole
Function: Bipolar Switch
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 3.8V ~ 24V
Technology: Hall Effect
Sensing Range: ±6mT Trip, ±10mT Release
Current - Output (Max): 100mA
Current - Supply (Max): 8mA
Test Condition: 25°C
Part Status: Last Time Buy
Produkt ist nicht verfügbar
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TLE4945LHALA1 TLE49x5L.pdf
TLE4945LHALA1
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH BIPOLAR 3SSO
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Output Type: Open Collector
Polarization: North Pole, South Pole
Function: Bipolar Switch
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 3.8V ~ 24V
Technology: Hall Effect
Sensing Range: ±6mT Trip, ±10mT Release
Current - Output (Max): 100mA
Current - Supply (Max): 8mA
Test Condition: 25°C
Part Status: Last Time Buy
Produkt ist nicht verfügbar
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IPN50R3K0CE Infineon-IPN50R3K0CE-DS-v02_01-EN.pdf?fileId=5546d46253f6505701547adae0c05ad5
Hersteller: Infineon Technologies
Description: SMALL SIGNAL FIELD-EFFECT TRANSI
Packaging: Bulk
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 400mA, 13V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 84 pF @ 100 V
Produkt ist nicht verfügbar
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SP001461194 Infineon-IPN50R2K0CE-DS-v02_01-EN.pdf?fileId=5546d46253f6505701547ac89b1f5aaa
Hersteller: Infineon Technologies
Description: IPN50R2K0CEATMA1 - MOSFET
Produkt ist nicht verfügbar
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IPN50R950CE INFN-S-A0002272334-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: COOLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-SOT223-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V
Produkt ist nicht verfügbar
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TC333LP32F200FAAKXUMA1 4_cip10529.pdf
TC333LP32F200FAAKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 248K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: DMA, I2S, PWM, WDT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-TQFP-100-23
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IGP40N65H5 INFN-S-A0001300424-1.pdf?t.download=true&u=5oefqw
IGP40N65H5
Hersteller: Infineon Technologies
Description: IGP40N65 - DISCRETE IGBT WITHOUT
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO220-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/165ns
Switching Energy: 390µJ (on), 120µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 250 W
Produkt ist nicht verfügbar
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BSL302SNL6327 INFNS16736-1.pdf?t.download=true&u=5oefqw
BSL302SNL6327
Hersteller: Infineon Technologies
Description: SMALL SIGNAL N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: PG-TSOP6-6-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V
Produkt ist nicht verfügbar
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BSL302SNH6327XTSA1 BSL302SN.pdf
BSL302SNH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 7.1A TSOP-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: PG-TSOP6-6
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V
Qualification: AEC-Q101
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BSL302SNH6327XTSA1 BSL302SN.pdf
BSL302SNH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 7.1A TSOP-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: PG-TSOP6-6
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IRFR540ZTRLPBF irfr540zpbf.pdf?fileId=5546d462533600a4015356325b2c2102
IRFR540ZTRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 35A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 28.5mOhm @ 21A, 10V
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 25 V
auf Bestellung 23350 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.61 EUR
Mindestbestellmenge: 3000
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IRFR540ZTRLPBF irfr540zpbf.pdf?fileId=5546d462533600a4015356325b2c2102
IRFR540ZTRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 35A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 28.5mOhm @ 21A, 10V
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 25 V
auf Bestellung 23517 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.52 EUR
12+1.59 EUR
100+1.07 EUR
500+0.84 EUR
1000+0.77 EUR
Mindestbestellmenge: 7
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IRSM515-044DA-INF IRSDS19334-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 3A 23DIP
Packaging: Bulk
Features: Bootstrap Circuit
Package / Case: 23-DIP Module (0.573", 14.55mm)
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 800mOhm LS, 800mOhm HS
Applications: AC Motors
Current - Output / Channel: 3A
Current - Peak Output: 15A
Technology: MOSFET (Metal Oxide)
Voltage - Load: 200V (Max)
Supplier Device Package: 23-DIP
Fault Protection: UVLO
Load Type: Inductive
Part Status: Active
auf Bestellung 120 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
76+6.71 EUR
Mindestbestellmenge: 76
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BTS5234G INFNS05973-1.pdf?t.download=true&u=5oefqw
BTS5234G
Hersteller: Infineon Technologies
Description: HALF-BRIDGE PERIPHERAL DRIVER
Packaging: Bulk
Part Status: Active
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
125+4.24 EUR
Mindestbestellmenge: 125
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BTS5234GXUMA1 BTS5234G.pdf
BTS5234GXUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-20
Packaging: Bulk
Features: Auto Restart, Status Flag
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 45mOhm
Input Type: Non-Inverting
Voltage - Load: 4.5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-20-21
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Obsolete
auf Bestellung 510 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
115+4.24 EUR
Mindestbestellmenge: 115
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IGD10N65T6ARMA1 Infineon-IGD10N65T6-DataSheet-v02_03-EN.pdf?fileId=5546d462766a0c1701766c359b640dde
IGD10N65T6ARMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 23A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 8.5A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/106ns
Switching Energy: 200µJ (on), 70µJ (off)
Test Condition: 400V, 8.5A, 47Ohm, 15V
Gate Charge: 27 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 42.5 A
Power - Max: 75 W
Produkt ist nicht verfügbar
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IGD10N65T6ARMA1 Infineon-IGD10N65T6-DataSheet-v02_03-EN.pdf?fileId=5546d462766a0c1701766c359b640dde
IGD10N65T6ARMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 23A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 8.5A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/106ns
Switching Energy: 200µJ (on), 70µJ (off)
Test Condition: 400V, 8.5A, 47Ohm, 15V
Gate Charge: 27 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 42.5 A
Power - Max: 75 W
Produkt ist nicht verfügbar
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S2GO3DTLE493DW2B6A0TOBO1 shield2go-boards-and-my-iot-adapter-fast-flexible-and-easy-prototyping-for-iot-applications-5546d4626b2d8e69016b503f3cce0810
S2GO3DTLE493DW2B6A0TOBO1
Hersteller: Infineon Technologies
Description: TLE493DW2B6 3DSENSE SHIELD2GO
Packaging: Box
Function: Magnetic Hall Effect
Type: Sensor
Contents: Board(s)
Utilized IC / Part: TLE493D-W2B6
Platform: Shield2Go
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+24.34 EUR
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MB90223PF-GT-269-BNDE1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 64KB MROM 120PQFP
Packaging: Tray
Package / Case: 120-BQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 3K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16F
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: EBI/EMI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 120-QFP (28x28)
Part Status: Obsolete
Number of I/O: 102
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BSC0803LSATMA1 Infineon-BSC0803LS-DataSheet-v02_01-EN.pdf?fileId=5546d462700c0ae601708712944b1d3c
BSC0803LSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 10A/44A TDSON-6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 22A, 10V
Power Dissipation (Max): 2.5W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 23µA
Supplier Device Package: PG-TDSON-8-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+1.17 EUR
10000+1.12 EUR
Mindestbestellmenge: 5000
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BSC0803LSATMA1 Infineon-BSC0803LS-DataSheet-v02_01-EN.pdf?fileId=5546d462700c0ae601708712944b1d3c
BSC0803LSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 10A/44A TDSON-6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 22A, 10V
Power Dissipation (Max): 2.5W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 23µA
Supplier Device Package: PG-TDSON-8-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
auf Bestellung 20585 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.89 EUR
10+2.59 EUR
100+2.02 EUR
500+1.67 EUR
1000+1.32 EUR
2000+1.23 EUR
Mindestbestellmenge: 7
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BAS40E6433HTMA1 INFNS19700-1.pdf?t.download=true&u=5oefqw
BAS40E6433HTMA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 40V 120MA PGSOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 120mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
auf Bestellung 72 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
36+0.49 EUR
59+0.30 EUR
Mindestbestellmenge: 36
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FP50R12W2T7B11BOMA1 Infineon-FP50R12W2T7_B11-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170f186fc3272fe
FP50R12W2T7B11BOMA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B-2
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 8 µA
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+94.58 EUR
15+69.27 EUR
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IM393M6FPXKLA1 Infineon-IM393-M6FP-DataSheet-v02_00-EN.pdf?fileId=5546d46273a5366f01740afd4fc371ae
IM393M6FPXKLA1
Hersteller: Infineon Technologies
Description: MODULE IGBT 600V 10A 26PWRSIP
Packaging: Tube
Package / Case: 26-PowerSIP Module, 22 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 10 A
Voltage: 600 V
Produkt ist nicht verfügbar
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IM393S6FPXKLA1 Infineon-IM393-S6FP-DataSheet-v02_00-EN.pdf?fileId=5546d46273a5366f01740b067a4071b1
IM393S6FPXKLA1
Hersteller: Infineon Technologies
Description: MODULE IGBT 600V 6A 26PWRSIP
Packaging: Tube
Package / Case: 26-PowerSIP Module, 22 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 6 A
Voltage: 600 V
Produkt ist nicht verfügbar
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IM393L6FPXKLA1 Infineon-IM393-L6FP-DataSheet-v02_00-EN.pdf?fileId=5546d46273a5366f01740b0683bb71b4
IM393L6FPXKLA1
Hersteller: Infineon Technologies
Description: MODULE IGBT 600V 15A 26PWRSIP
Packaging: Tube
Package / Case: 26-PowerSIP Module, 22 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 15 A
Voltage: 600 V
Produkt ist nicht verfügbar
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IM393X6FPXKLA1 Infineon-IM393-X6FP-DataSheet-v02_00-EN.pdf?fileId=5546d46273a5366f01740b06985471b7
IM393X6FPXKLA1
Hersteller: Infineon Technologies
Description: MODULE IGBT 600V 20A 26PWRSIP
Packaging: Tube
Package / Case: 26-PowerSIP Module, 22 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 20 A
Voltage: 600 V
Produkt ist nicht verfügbar
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IFF600B12ME4S8PB11BOSA1 Infineon-IFF600B12ME4S8P_B11-DS-v03_01-EN.pdf?fileId=5546d462602a9dc801602ab2feb70027
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 600A 20MW ECONO
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-5
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+551.07 EUR
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FF600R12ME4EB11BPSA1
FF600R12ME4EB11BPSA1
Hersteller: Infineon Technologies
Description: MEDIUM POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-3
IGBT Type: Trench Field Stop
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
Produkt ist nicht verfügbar
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TLE4296GV50HTSA1 INFNS12042-1.pdf?t.download=true&u=5oefqw
TLE4296GV50HTSA1
Hersteller: Infineon Technologies
Description: IC REG LIN 5V 30MA PG-SCT595-5
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 30mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 170 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5
Voltage - Output (Min/Fixed): 5V
Control Features: Inhibit
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.3V @ 20mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 5.2 mA
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE4295GV26HTSA1 Infineon-TLE4295-DS-v01_40-EN.pdf?fileId=5546d46258fc0bc101595f8575241f74
TLE4295GV26HTSA1
Hersteller: Infineon Technologies
Description: IC REG LIN 2.6V 30MA PG-SCT595-5
Packaging: Bulk
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 30mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5
Voltage - Output (Min/Fixed): 2.6V
Control Features: Power Fail
Grade: Automotive
Part Status: Obsolete
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.4V @ 20mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 4 mA
Qualification: AEC-Q100
auf Bestellung 105000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
532+0.91 EUR
Mindestbestellmenge: 532
Im Einkaufswagen  Stück im Wert von  UAH
TLE4295GV30HTSA1 Infineon-TLE4295-DS-v01_40-EN.pdf?fileId=5546d46258fc0bc101595f8575241f74
TLE4295GV30HTSA1
Hersteller: Infineon Technologies
Description: IC REG LIN 3V 30MA PG-SCT595-5
Packaging: Bulk
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 30mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5
Voltage - Output (Min/Fixed): 3V
Control Features: Power Fail
Grade: Automotive
Part Status: Last Time Buy
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.4V @ 20mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 4 mA
Qualification: AEC-Q100
auf Bestellung 53780 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
463+1.06 EUR
Mindestbestellmenge: 463
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TLE4296GV30HTSA1 INFNS12042-1.pdf?t.download=true&u=5oefqw
TLE4296GV30HTSA1
Hersteller: Infineon Technologies
Description: IC REG LIN 3V 30MA PG-SCT595-5
Packaging: Bulk
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 30mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 170 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5
Voltage - Output (Min/Fixed): 3V
Control Features: Inhibit
Grade: Automotive
Part Status: Obsolete
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.3V @ 20mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 4.5 mA
Qualification: AEC-Q100
auf Bestellung 249000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
475+1.02 EUR
Mindestbestellmenge: 475
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TLS105B0MBHTSA1 Infineon-TLS105B0MB-DS-v01_00-EN.pdf?fileId=5546d46261ff5777016200cc39952f83
TLS105B0MBHTSA1
Hersteller: Infineon Technologies
Description: IC REG LIN POS ADJ 120MA SCT595
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 120mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 75 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5
Voltage - Output (Max): 20V
Voltage - Output (Min/Fixed): 2V
Control Features: Enable
Grade: Automotive
Part Status: Active
PSRR: 100dB (100Hz)
Voltage Dropout (Max): 0.45V @ 50mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 5.5 mA
Qualification: AEC-Q100
auf Bestellung 9760 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.44 EUR
18+1.03 EUR
25+0.93 EUR
100+0.82 EUR
250+0.77 EUR
500+0.73 EUR
1000+0.71 EUR
Mindestbestellmenge: 13
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TLE4286GHTSA1 Infineon-TLE4286G-DS-v02_30-EN.pdf?fileId=5546d46258fc0bc101595fa0a3b01fca
TLE4286GHTSA1
Hersteller: Infineon Technologies
Description: IC REG LIN 5V 15MA PG-SCT595-5
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 15mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5
Voltage - Output (Min/Fixed): 5V
Control Features: Inhibit
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 1.1V @ 10mA
Protection Features: Over Temperature, Short Circuit
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE4295GV33HTSA1 Infineon-TLE4295-DS-v01_40-EN.pdf?fileId=5546d46258fc0bc101595f8575241f74
TLE4295GV33HTSA1
Hersteller: Infineon Technologies
Description: IC REG LIN 3.3V 30MA PG-SCT595-5
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 30mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5
Voltage - Output (Min/Fixed): 3.3V
Control Features: Power Fail
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.4V @ 20mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 4 mA
Qualification: AEC-Q100
auf Bestellung 13 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.92 EUR
13+1.39 EUR
Mindestbestellmenge: 10
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TLE4296GV33HTSA1 INFNS12042-1.pdf?t.download=true&u=5oefqw
TLE4296GV33HTSA1
Hersteller: Infineon Technologies
Description: IC REG LIN 3.3V 30MA PG-SCT595-5
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 30mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 170 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5
Voltage - Output (Min/Fixed): 3.3V
Control Features: Inhibit
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.3V @ 20mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 5.2 mA
Qualification: AEC-Q100
auf Bestellung 32 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.74 EUR
15+1.25 EUR
25+1.13 EUR
Mindestbestellmenge: 11
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IRF135S203 irf135s203.pdf?fileId=5546d462533600a4015364c38ddf29b1
IRF135S203
Hersteller: Infineon Technologies
Description: MOSFET N-CH 135V 129A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 129A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 77A, 10V
Power Dissipation (Max): 441W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 135 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9700 pF @ 50 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+2.25 EUR
Mindestbestellmenge: 800
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IRF135S203 irf135s203.pdf?fileId=5546d462533600a4015364c38ddf29b1
IRF135S203
Hersteller: Infineon Technologies
Description: MOSFET N-CH 135V 129A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 129A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 77A, 10V
Power Dissipation (Max): 441W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 135 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9700 pF @ 50 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
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PEF 22554 HT V2.1 PEF22554_V3.1_PB_Rev3.0.pdf
PEF 22554 HT V2.1
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE 144TQFP
Produkt ist nicht verfügbar
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BB669 INFNS15707-1.pdf?t.download=true&u=5oefqw
BB669
Hersteller: Infineon Technologies
Description: VARIABLE CAPACITANCE DIODE
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C
Capacitance @ Vr, F: 2.9pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SOD323-2-1
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 20.9
auf Bestellung 49000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15000+0.03 EUR
Mindestbestellmenge: 15000
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BB669E7904 INFNS15707-1.pdf?t.download=true&u=5oefqw
BB669E7904
Hersteller: Infineon Technologies
Description: VARIABLE CAPACITANCE DIODE
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C
Capacitance @ Vr, F: 2.9pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SOD323-2-1
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 20.9
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6918+0.07 EUR
Mindestbestellmenge: 6918
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BB659CH7903XTMA1 bb639c_bb659cseries.pdf
BB659CH7903XTMA1
Hersteller: Infineon Technologies
Description: DIODE VAR CAP 30V 20MA SCD80
Packaging: Bulk
Package / Case: SC-80
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.75pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: SCD-80
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 15.3
auf Bestellung 209478 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8510+0.07 EUR
Mindestbestellmenge: 8510
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BB659H7902 INFNS15706-1.pdf?t.download=true&u=5oefqw
BB659H7902
Hersteller: Infineon Technologies
Description: VARIABLE CAPACITANCE DIODE
Packaging: Bulk
Package / Case: SC-80
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C
Capacitance @ Vr, F: 2.9pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SCD80-2
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 14.7
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12000+0.05 EUR
Mindestbestellmenge: 12000
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BSM50GP60B2BOSA1 INFNS12611-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IGBT MODULE
Packaging: Bulk
Part Status: Active
auf Bestellung 302 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+89.06 EUR
Mindestbestellmenge: 6
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IPA50R299CPXKSA1 IPA50R299CP.pdf
IPA50R299CPXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 550V 12A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO220-3-31
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V
auf Bestellung 31927 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
315+1.54 EUR
Mindestbestellmenge: 315
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