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IRFH6200TRPBF IRFH6200TRPBF Infineon Technologies irfh6200pbf.pdf?fileId=5546d462533600a40153561e9b131ed0 Description: MOSFET N-CH 20V 49A/100A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.95mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 10890 pF @ 10 V
auf Bestellung 7611 Stücke:
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10+2.65 EUR
50+2 EUR
100+1.8 EUR
500+1.43 EUR
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CY14B101J2-SXI CY14B101J2-SXI Infineon Technologies Infineon-CY14C101I_CY14B101I_CY14E101I_1-Mbit_(128_K_8)_Serial_(I2C)_nvSRAM_with_Real_Time_Clock-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebfe05a3466 Description: IC NVSRAM 1MBIT I2C 3.4MHZ 8SOIC
DigiKey Programmable: Not Verified
Memory Organization: 128K x 8
Memory Interface: I2C
Supplier Device Package: 8-SOIC
Memory Format: NVSRAM
Clock Frequency: 3.4 MHz
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Mbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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10+18.99 EUR
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IR4312MTRPBF IR4312MTRPBF Infineon Technologies ir4302.pdf?fileId=5546d462533600a4015355d602a9181d Description: IC AMP CLASS D STEREO 35W 44QFN
Part Status: Obsolete
Supplier Device Package: 44-PQFN (7x7)
Max Output Power x Channels @ Load: 35W x 2 @ 4Ohm
Voltage - Supply: 10V ~ 15V
Operating Temperature: -40°C ~ 100°C (TA)
Type: Class D
Mounting Type: Surface Mount
Output Type: 2-Channel (Stereo)
Package / Case: 44-PowerVFQFN
Features: Depop, Differential Inputs
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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IR4312MTRPBF IR4312MTRPBF Infineon Technologies ir4302.pdf?fileId=5546d462533600a4015355d602a9181d Description: IC AMP CLASS D STEREO 35W 44QFN
Part Status: Obsolete
Supplier Device Package: 44-PQFN (7x7)
Max Output Power x Channels @ Load: 35W x 2 @ 4Ohm
Voltage - Supply: 10V ~ 15V
Operating Temperature: -40°C ~ 100°C (TA)
Type: Class D
Mounting Type: Surface Mount
Output Type: 2-Channel (Stereo)
Package / Case: 44-PowerVFQFN
Features: Depop, Differential Inputs
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IRAUDAMP18 IRAUDAMP18 Infineon Technologies iraudamp18.pdf_fileid=5546d462533600a40153569a96eb2be9.pdf Description: BOARD EVAL FOR IR4312
Part Status: Active
Supplied Contents: Board(s)
Utilized IC / Part: IR4312
Board Type: Fully Populated
Max Output Power x Channels @ Load: 35W x 2 @ 4Ohm
Voltage - Supply: 18V ~ 31V
Amplifier Type: Class D
Output Type: 2-Channel (Stereo)
Packaging: Bulk
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IRAUDAMP15 IRAUDAMP15 Infineon Technologies iraudamp15.pdf?fileId=5546d462533600a4015356973e6e2bdf Description: EVAL BOARD FOR IR4311
Contents: Board(s)
Part Status: Active
Supplied Contents: Board(s)
Utilized IC / Part: IR4311
Board Type: Fully Populated
Max Output Power x Channels @ Load: 35W x 2 @ 4Ohm
Voltage - Supply: 18V ~ 31V
Amplifier Type: Class D
Output Type: 2-Channel (Stereo)
Packaging: Bulk
Produkt ist nicht verfügbar
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IRGP4640D-EPBF IRGP4640D-EPBF Infineon Technologies IRGx4640D%28-E%29PbF.pdf Description: IGBT 600V 65A TO-247AC
Power - Max: 250 W
Current - Collector Pulsed (Icm): 72 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 65 A
Part Status: Obsolete
Gate Charge: 75 nC
Test Condition: 400V, 24A, 10Ohm, 15V
Switching Energy: 115µJ (on), 600µJ (off)
Td (on/off) @ 25°C: 41ns/104ns
Supplier Device Package: TO-247AC
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
Reverse Recovery Time (trr): 89 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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IRGP4650DPBF IRGP4650DPBF Infineon Technologies IRSD-S-A0000175678-1.pdf?t.download=true&u=5oefqw Description: IGBT 600V 76A TO-247AC
Power - Max: 268 W
Current - Collector Pulsed (Icm): 105 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 76 A
Part Status: Obsolete
Gate Charge: 104 nC
Test Condition: 400V, 35A, 10Ohm, 15V
Switching Energy: 390µJ (on), 632µJ (off)
Td (on/off) @ 25°C: 46ns/105ns
Supplier Device Package: TO-247AC
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 35A
Reverse Recovery Time (trr): 120 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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IRGP4640DPBF IRGP4640DPBF Infineon Technologies IRGx4640D%28-E%29PbF.pdf Description: IGBT 600V 65A TO-247AD
Power - Max: 250 W
Current - Collector Pulsed (Icm): 72 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 65 A
Part Status: Obsolete
Gate Charge: 75 nC
Test Condition: 400V, 24A, 10Ohm, 15V
Switching Energy: 115µJ (on), 600µJ (off)
Td (on/off) @ 25°C: 41ns/104ns
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
Reverse Recovery Time (trr): 89 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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IRFR220NTRLPBF IRFR220NTRLPBF Infineon Technologies irfr220npbf.pdf?fileId=5546d462533600a40153562d8a7b206f Description: MOSFET N-CH 200V 5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.9A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
Produkt ist nicht verfügbar
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IRLR3410TRLPBF IRLR3410TRLPBF Infineon Technologies irlr3410pbf.pdf?fileId=5546d462533600a40153566d14c52695 Description: MOSFET N-CH 100V 17A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
auf Bestellung 33859 Stücke:
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10+2.32 EUR
15+1.46 EUR
50+1.08 EUR
100+0.96 EUR
500+0.75 EUR
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IR2184STRPBF IR2184STRPBF Infineon Technologies ir2184.pdf?fileId=5546d462533600a4015355c955e616d4 Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRFR6215TRLPBF IRFR6215TRLPBF Infineon Technologies irfr6215pbf.pdf?fileId=5546d462533600a40153563595592114 Description: MOSFET P-CH 150V 13A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 295mOhm @ 6.6A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
auf Bestellung 2757 Stücke:
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6+3.81 EUR
10+2.43 EUR
100+1.64 EUR
500+1.3 EUR
1000+1.19 EUR
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IR2010STRPBF IR2010STRPBF Infineon Technologies ir2010.pdf?fileId=5546d462533600a4015355c48f901660 Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 10ns, 15ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 3A, 3A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 2871 Stücke:
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4+5.87 EUR
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IR11672ASTRPBF IR11672ASTRPBF Infineon Technologies ir11672aspbf.pdf?fileId=5546d462533600a4015355c455561653 Description: IC REC SMART CONTROL 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Voltage - Input: 200V
Operating Temperature: -25°C ~ 125°C (TJ)
Voltage - Supply: 11.4V ~ 18V
Applications: Secondary-Side Controller
Supplier Device Package: 8-SOIC
Part Status: Active
Current - Supply: 50 mA
DigiKey Programmable: Not Verified
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IRLR2908TRPBF IRLR2908TRPBF Infineon Technologies irlr2908pbf.pdf?fileId=5546d462533600a40153566cdace2681 Description: MOSFET N-CH 80V 30A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 23A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V
auf Bestellung 10568 Stücke:
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6+3.56 EUR
10+2.26 EUR
50+1.7 EUR
100+1.52 EUR
500+1.2 EUR
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IRS2153DSTRPBF IRS2153DSTRPBF Infineon Technologies IRSDS08244-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.4V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 120ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 180mA, 260mA
Part Status: Active
DigiKey Programmable: Not Verified
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9+2.53 EUR
12+1.84 EUR
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250+1.39 EUR
500+1.33 EUR
1000+1.32 EUR
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IR21094STRPBF IR21094STRPBF Infineon Technologies ir2109.pdf?fileId=5546d462533600a4015355c7e85b1679 Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Active
DigiKey Programmable: Not Verified
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10+3 EUR
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100+2.45 EUR
250+2.31 EUR
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IR3856MTRPBF IR3856MTRPBF Infineon Technologies ir3856m.pdf?fileId=5546d462533600a4015355d5818517f8 Description: IC REG BUCK ADJ 6A 17PQFN
Voltage - Output (Min/Fixed): 0.7V
Voltage - Input (Min): 1.5V
Voltage - Output (Max): 18.9V
Synchronous Rectifier: Yes
Supplier Device Package: 17-PQFN (4x5)
Topology: Buck
Voltage - Input (Max): 21V
Frequency - Switching: 225kHz ~ 1.65MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 6A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 17-PowerVQFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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IRLHS6242TRPBF IRLHS6242TRPBF Infineon Technologies irlhs6242pbf.pdf?fileId=5546d462533600a401535663a52d25a9 Description: MOSFET N-CH 20V 10A/12A 6PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 8.5A, 4.5V
Power Dissipation (Max): 1.98W (Ta), 9.6W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: 6-PQFN (2x2) (DFN2020)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 10 V
auf Bestellung 98270 Stücke:
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11+2.05 EUR
17+1.29 EUR
50+0.95 EUR
100+0.84 EUR
500+0.65 EUR
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IRS2304STRPBF IRS2304STRPBF Infineon Technologies irs2304spbf.pdf?fileId=5546d462533600a40153567a8fe72802 Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Current - Peak Output (Source, Sink): 290mA, 600mA
Logic Voltage - VIL, VIH: 0.7V, 2.3V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 70ns, 35ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 3333 Stücke:
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10+2.2 EUR
14+1.58 EUR
25+1.43 EUR
100+1.26 EUR
250+1.19 EUR
500+1.14 EUR
1000+1.12 EUR
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IRFH5300TRPBF IRFH5300TRPBF Infineon Technologies irfh5300pbf.pdf?fileId=5546d462533600a40153561b3e141ebc Description: MOSFET N-CH 30V 40A/100A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 15 V
auf Bestellung 7524 Stücke:
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7+3.45 EUR
10+2.2 EUR
50+1.65 EUR
100+1.48 EUR
500+1.17 EUR
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IRF9389TRPBF IRF9389TRPBF Infineon Technologies irf9389pbf.pdf?fileId=5546d462533600a40153561178901daf Description: MOSFET N/P-CH 30V 6.8A/4.6A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.8A, 4.6A
Input Capacitance (Ciss) (Max) @ Vds: 398pF @ 15V
Rds On (Max) @ Id, Vgs: 27mOhm @ 6.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.3V @ 10µA
Supplier Device Package: 8-SO
Part Status: Active
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IRF9389TRPBF IRF9389TRPBF Infineon Technologies irf9389pbf.pdf?fileId=5546d462533600a40153561178901daf Description: MOSFET N/P-CH 30V 6.8A/4.6A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.8A, 4.6A
Input Capacitance (Ciss) (Max) @ Vds: 398pF @ 15V
Rds On (Max) @ Id, Vgs: 27mOhm @ 6.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.3V @ 10µA
Supplier Device Package: 8-SO
Part Status: Active
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500+0.46 EUR
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BFP840ESDH6327XTSA1 BFP840ESDH6327XTSA1 Infineon Technologies Infineon-BFP840ESD-DS-v02_00-EN.pdf?fileId=5546d46265f064ff01663896bcab4eb6 Description: RF TRANS NPN 2.25V 80GHZ SOT-343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 18.5dB
Power - Max: 75mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 2.25V
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 1.8V
Frequency - Transition: 80GHz
Noise Figure (dB Typ @ f): 0.85dB @ 5.5GHz
Supplier Device Package: PG-SOT343-4-2
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BFP840FESDH6327XTSA1 BFP840FESDH6327XTSA1 Infineon Technologies Infineon-BFP840FESD-DS-v02_00-EN.pdf?fileId=5546d46265f064ff01663896c6294eb9 Description: RF TRANS NPN 2.6V 85GHZ 4TSFP-4
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 35dB
Power - Max: 75mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 2.6V
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 1.8V
Frequency - Transition: 85GHz
Noise Figure (dB Typ @ f): 0.75dB @ 5.5GHz
Supplier Device Package: PG-TSFP-4-1
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BFP842ESDH6327XTSA1 BFP842ESDH6327XTSA1 Infineon Technologies Infineon-BFP842ESD-DS-v02_00-EN.pdf?fileId=5546d46265f064ff01663896cf294ebc Description: RF TRANS NPN 3.7V 60GHZ SOT-343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 26dB
Power - Max: 120mW
Current - Collector (Ic) (Max): 40mA
Voltage - Collector Emitter Breakdown (Max): 3.7V
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 15mA, 2.5V
Frequency - Transition: 60GHz
Noise Figure (dB Typ @ f): 0.65dB @ 3.5GHz
Supplier Device Package: PG-SOT343-4-2
Part Status: Active
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BGA 712L16 E6327 BGA 712L16 E6327 Infineon Technologies fundamentals-of-power-semiconductors Description: IC RF AMP MMIC RF LNA TSLP-16
Packaging: Tape & Reel (TR)
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BGA725L6E6327FTSA1 BGA725L6E6327FTSA1 Infineon Technologies BGA725L6_V2+0.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433784a0400137ef9a4d341f23 Description: IC AMP GPS 1.55-1.615GHZ TSLP6-2
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: GPS/GNSS
Voltage - Supply: 1.5V ~ 3.6V
Gain: 20dB
Current - Supply: 3.6mA
Noise Figure: 0.65dB
P1dB: -16dBm
Supplier Device Package: TSLP-6-2
Part Status: Active
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BGA749N16E6327XTSA1 BGA749N16E6327XTSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IC RF AMP GPS 940MHZ TSNP7-1
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 940MHz
RF Type: General Purpose
Voltage - Supply: 3.6V
Gain: 16.1dB
Current - Supply: 10mA
Noise Figure: 1.2dB
Supplier Device Package: PG-TSNP-7-1
Produkt ist nicht verfügbar
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BGA 925L6 E6327 BGA 925L6 E6327 Infineon Technologies BGA925L6.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a3043327f13e30132a4db54e64337 Description: IC AMP MMIC RF GNSS LNA TSLP-6
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BGB719N7ESDE6327XTMA1 BGB719N7ESDE6327XTMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IC RF AMP FM 10MHZ-1GHZ TSNP7-6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 10MHz ~ 1GHz
RF Type: FM
Voltage - Supply: 3V
Gain: 13.5dB
Current - Supply: 2.8mA
Noise Figure: 1.2dB
P1dB: -6dBm
Test Frequency: 100MHz
Supplier Device Package: PG-TSNP-7-6
Produkt ist nicht verfügbar
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BGM 1034N7 E6327 BGM 1034N7 E6327 Infineon Technologies bgm1034N7.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a304334fac4c60134fafa93ce0011 Description: IC AMP MMIC RF 17.0DB TSNP-7
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 Mindestbestellmenge: 3000 Stücke
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BGS15AN16E6327XTSA1 BGS15AN16E6327XTSA1 Infineon Technologies BGS15AN16_v2_1.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433f1b26e8013f2d44cb463811 Description: IC RF SWITCH SP5T 3GHZ TSNP16-3
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BGSF18DM20E6327XUMA1 BGSF18DM20E6327XUMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IC RF SWITCH SP8T
Packaging: Tape & Reel (TR)
Circuit: SP8T
RF Type: Cellular, 3G, GSM
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ESD3V3S1B02LRHE6327XTSA1 ESD3V3S1B02LRHE6327XTSA1 Infineon Technologies ESD3V3S1B_ESD_Transient_Protection_Diode_Infineon.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a3043382e837301385c223ad03336 Description: TVS DIODE 3.3VWM 6.8VC TSLP2-17
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ESD3V3XU1USE6327XTSA1 ESD3V3XU1USE6327XTSA1 Infineon Technologies ESD3V3XU1US.pdf Description: TVS DIODE 3.3VWM 11VC TSSLP-2-1
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSSLP-2-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.5V (Typ)
Voltage - Clamping (Max) @ Ipp: 11V (Typ)
Power Line Protection: No
Produkt ist nicht verfügbar
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TVS3V3L4UE6327HTSA1 TVS3V3L4UE6327HTSA1 Infineon Technologies TVS3V3L4U_rev_2_2.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a3043382e837301385be7912532ed Description: TVS DIODE 3.3VWM 7.7VC PGSC746
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 20A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-SC74-6
Unidirectional Channels: 4
Bidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 7.7V (Typ)
Power Line Protection: No
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3000+0.37 EUR
6000+0.36 EUR
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BFP840ESDH6327XTSA1 BFP840ESDH6327XTSA1 Infineon Technologies Infineon-BFP840ESD-DS-v02_00-EN.pdf?fileId=5546d46265f064ff01663896bcab4eb6 Description: RF TRANS NPN 2.25V 80GHZ SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 18.5dB
Power - Max: 75mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 2.25V
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 1.8V
Frequency - Transition: 80GHz
Noise Figure (dB Typ @ f): 0.85dB @ 5.5GHz
Supplier Device Package: PG-SOT343-4-2
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BFP840FESDH6327XTSA1 BFP840FESDH6327XTSA1 Infineon Technologies Infineon-BFP840FESD-DS-v02_00-EN.pdf?fileId=5546d46265f064ff01663896c6294eb9 Description: RF TRANS NPN 2.6V 85GHZ 4TSFP-4
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 35dB
Power - Max: 75mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 2.6V
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 1.8V
Frequency - Transition: 85GHz
Noise Figure (dB Typ @ f): 0.75dB @ 5.5GHz
Supplier Device Package: PG-TSFP-4-1
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BFP842ESDH6327XTSA1 BFP842ESDH6327XTSA1 Infineon Technologies Infineon-BFP842ESD-DS-v02_00-EN.pdf?fileId=5546d46265f064ff01663896cf294ebc Description: RF TRANS NPN 3.7V 60GHZ SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 26dB
Power - Max: 120mW
Current - Collector (Ic) (Max): 40mA
Voltage - Collector Emitter Breakdown (Max): 3.7V
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 15mA, 2.5V
Frequency - Transition: 60GHz
Noise Figure (dB Typ @ f): 0.65dB @ 3.5GHz
Supplier Device Package: PG-SOT343-4-2
Part Status: Active
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BGA725L6E6327FTSA1 BGA725L6E6327FTSA1 Infineon Technologies BGA725L6_V2+0.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433784a0400137ef9a4d341f23 Description: IC AMP GPS 1.55-1.615GHZ TSLP6-2
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: GPS/GNSS
Voltage - Supply: 1.5V ~ 3.6V
Gain: 20dB
Current - Supply: 3.6mA
Noise Figure: 0.65dB
P1dB: -16dBm
Supplier Device Package: TSLP-6-2
Part Status: Active
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34+0.63 EUR
36+0.6 EUR
100+0.54 EUR
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1000+0.46 EUR
5000+0.43 EUR
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BGA749N16E6327XTSA1 BGA749N16E6327XTSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IC RF AMP GPS 940MHZ TSNP7-1
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 940MHz
RF Type: General Purpose
Voltage - Supply: 3.6V
Gain: 16.1dB
Current - Supply: 10mA
Noise Figure: 1.2dB
Supplier Device Package: PG-TSNP-7-1
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6+4.11 EUR
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BGA 925L6 E6327 BGA 925L6 E6327 Infineon Technologies BGA925L6.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a3043327f13e30132a4db54e64337 Description: IC AMP MMIC RF GNSS LNA TSLP-6
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BGB719N7ESDE6327XTMA1 BGB719N7ESDE6327XTMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IC RF AMP FM 10MHZ-1GHZ TSNP7-6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 10MHz ~ 1GHz
RF Type: FM
Voltage - Supply: 3V
Gain: 13.5dB
Current - Supply: 2.8mA
Noise Figure: 1.2dB
P1dB: -6dBm
Test Frequency: 100MHz
Supplier Device Package: PG-TSNP-7-6
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17+1.27 EUR
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100+0.86 EUR
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1000+0.77 EUR
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BGM 1034N7 E6327 BGM 1034N7 E6327 Infineon Technologies bgm1034N7.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a304334fac4c60134fafa93ce0011 Description: IC AMP MMIC RF 17.0DB TSNP-7
auf Bestellung 16295 Stücke:
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BGS15AN16E6327XTSA1 BGS15AN16E6327XTSA1 Infineon Technologies BGS15AN16_v2_1.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433f1b26e8013f2d44cb463811 Description: IC RF SWITCH SP5T 3GHZ TSNP16-3
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ESD1P0RFWH6327XTSA1 ESD1P0RFWH6327XTSA1 Infineon Technologies esd1p0rfseries.pdf?folderId=db3a30431441fb5d01149221c9230fb2&fileId=db3a30431441fb5d01149228afda0fc7 Description: TVS DIODE 70VWM 15VC PGSOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet, HDMI, RF Antenna
Capacitance @ Frequency: 1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 70V (Max)
Supplier Device Package: PG-SOT323
Unidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 15V
Power Line Protection: No
Produkt ist nicht verfügbar
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ESD3V3S1B02LRHE6327XTSA1 ESD3V3S1B02LRHE6327XTSA1 Infineon Technologies ESD3V3S1B_ESD_Transient_Protection_Diode_Infineon.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a3043382e837301385c223ad03336 Description: TVS DIODE 3.3VWM 6.8VC TSLP2-17
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ESD3V3XU1USE6327XTSA1 ESD3V3XU1USE6327XTSA1 Infineon Technologies ESD3V3XU1US.pdf Description: TVS DIODE 3.3VWM 11VC TSSLP-2-1
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 11V (Typ)
Voltage - Breakdown (Min): 6.5V (Typ)
Unidirectional Channels: 1
Supplier Device Package: PG-TSSLP-2-1
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Capacitance @ Frequency: 0.4pF @ 1MHz
Applications: Ethernet, HDMI
Operating Temperature: -40°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Cut Tape (CT)
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TVS3V3L4UE6327HTSA1 TVS3V3L4UE6327HTSA1 Infineon Technologies TVS3V3L4U_rev_2_2.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a3043382e837301385be7912532ed Description: TVS DIODE 3.3VWM 7.7VC PGSC746
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 20A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-SC74-6
Unidirectional Channels: 4
Bidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 7.7V (Typ)
Power Line Protection: No
auf Bestellung 54821 Stücke:
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BGA 925L6 E6327 BGA 925L6 E6327 Infineon Technologies BGA925L6.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a3043327f13e30132a4db54e64337 Description: IC AMP MMIC RF GNSS LNA TSLP-6
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BGM 1034N7 E6327 BGM 1034N7 E6327 Infineon Technologies bgm1034N7.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a304334fac4c60134fafa93ce0011 Description: IC AMP MMIC RF 17.0DB TSNP-7
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ESD3V3S1B02LRHE6327XTSA1 ESD3V3S1B02LRHE6327XTSA1 Infineon Technologies ESD3V3S1B_ESD_Transient_Protection_Diode_Infineon.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a3043382e837301385c223ad03336 Description: TVS DIODE 3.3VWM 6.8VC TSLP2-17
Produkt ist nicht verfügbar
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BAR5002VH6327XTSA1 BAR5002VH6327XTSA1 Infineon Technologies bar50series.pdf?folderId=db3a304314dca3890114fea780a30a91&fileId=db3a304314dca3890114fea7dd410a92 Description: RF DIODE PIN 50V 250MW PG-SC79-2
Power Dissipation (Max): 250 mW
Current - Max: 100 mA
Part Status: Active
Supplier Device Package: PG-SC79-2
Voltage - Peak Reverse (Max): 50V
Resistance @ If, F: 4.5Ohm @ 10mA, 100MHz
Capacitance @ Vr, F: 0.4pF @ 5V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: PIN - Single
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
auf Bestellung 7132 Stücke:
Lieferzeit 10-14 Tag (e)
84+0.25 EUR
124+0.17 EUR
142+0.14 EUR
167+0.13 EUR
250+0.11 EUR
500+0.11 EUR
1000+0.1 EUR
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BAR6306WH6327XTSA1 BAR6306WH6327XTSA1 Infineon Technologies INFNS15694-1.pdf?t.download=true&u=5oefqw Description: RF DIODE PIN 50V 250MW PG-SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT323
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
Produkt ist nicht verfügbar
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BAR6406E6327HTSA1 BAR6406E6327HTSA1 Infineon Technologies Infineon-BAR64-06-DS-v01_01-EN.pdf?fileId=5546d462689a790c01690f0300ea3908 Description: RF DIODE PIN 150V 250MW PG-SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
auf Bestellung 1325 Stücke:
Lieferzeit 10-14 Tag (e)
63+0.33 EUR
97+0.21 EUR
110+0.19 EUR
129+0.17 EUR
250+0.15 EUR
500+0.14 EUR
1000+0.13 EUR
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BAR6502VH6327XTSA1 BAR6502VH6327XTSA1 Infineon Technologies bar65series.pdf?folderId=db3a304314dca3890114fea780a30a91&fileId=db3a304314dca3890114ff1c81b50af0 Description: RF DIODE PIN 30V 250MW PG-SC79-2
Power Dissipation (Max): 250 mW
Current - Max: 100 mA
Part Status: Active
Supplier Device Package: PG-SC79-2
Voltage - Peak Reverse (Max): 30V
Resistance @ If, F: 900mOhm @ 10mA, 100MHz
Capacitance @ Vr, F: 0.8pF @ 3V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: PIN - Single
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
auf Bestellung 8092 Stücke:
Lieferzeit 10-14 Tag (e)
91+0.23 EUR
136+0.15 EUR
155+0.13 EUR
184+0.11 EUR
250+0.1 EUR
500+0.099 EUR
1000+0.093 EUR
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BAR81WH6327XTSA1 BAR81WH6327XTSA1 Infineon Technologies bar81series.pdf?folderId=db3a304314dca3890114fea780a30a91&fileId=db3a304314dca3890114ff203eb70af2 Description: DIODE STANDAR 30V 100MW SOT343-4
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Diode Type: Standard - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.9pF @ 3V, 1MHz
Resistance @ If, F: 1Ohm @ 5mA, 100MHz
Voltage - Peak Reverse (Max): 30V
Supplier Device Package: PG-SOT343-4-2
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 100 mW
auf Bestellung 23058 Stücke:
Lieferzeit 10-14 Tag (e)
18+1.18 EUR
26+0.82 EUR
29+0.74 EUR
100+0.64 EUR
250+0.6 EUR
500+0.57 EUR
1000+0.55 EUR
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BAR9002LSE6327XTSA1 BAR9002LSE6327XTSA1 Infineon Technologies bar90series.pdf Description: RF DIODE PIN 80V 150MW TSSLP-2
Supplier Device Package: PG-TSSLP-2-1
Voltage - Peak Reverse (Max): 80V
Resistance @ If, F: 800mOhm @ 10mA, 100MHz
Capacitance @ Vr, F: 0.35pF @ 1V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: PIN - Single
Package / Case: 0201 (0603 Metric)
Packaging: Cut Tape (CT)
Power Dissipation (Max): 150 mW
Current - Max: 100 mA
Part Status: Obsolete
Produkt ist nicht verfügbar
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IRFH6200TRPBF irfh6200pbf.pdf?fileId=5546d462533600a40153561e9b131ed0
IRFH6200TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 49A/100A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.95mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 10890 pF @ 10 V
auf Bestellung 7611 Stücke:
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AnzahlPrivatkunde
6+4.14 EUR
10+2.65 EUR
50+2 EUR
100+1.8 EUR
500+1.43 EUR
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CY14B101J2-SXI Infineon-CY14C101I_CY14B101I_CY14E101I_1-Mbit_(128_K_8)_Serial_(I2C)_nvSRAM_with_Real_Time_Clock-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebfe05a3466
CY14B101J2-SXI
Hersteller: Infineon Technologies
Description: IC NVSRAM 1MBIT I2C 3.4MHZ 8SOIC
DigiKey Programmable: Not Verified
Memory Organization: 128K x 8
Memory Interface: I2C
Supplier Device Package: 8-SOIC
Memory Format: NVSRAM
Clock Frequency: 3.4 MHz
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Mbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
auf Bestellung 92 Stücke:
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AnzahlPrivatkunde
2+20.5 EUR
10+18.99 EUR
25+18.56 EUR
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IR4312MTRPBF ir4302.pdf?fileId=5546d462533600a4015355d602a9181d
IR4312MTRPBF
Hersteller: Infineon Technologies
Description: IC AMP CLASS D STEREO 35W 44QFN
Part Status: Obsolete
Supplier Device Package: 44-PQFN (7x7)
Max Output Power x Channels @ Load: 35W x 2 @ 4Ohm
Voltage - Supply: 10V ~ 15V
Operating Temperature: -40°C ~ 100°C (TA)
Type: Class D
Mounting Type: Surface Mount
Output Type: 2-Channel (Stereo)
Package / Case: 44-PowerVFQFN
Features: Depop, Differential Inputs
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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IR4312MTRPBF ir4302.pdf?fileId=5546d462533600a4015355d602a9181d
IR4312MTRPBF
Hersteller: Infineon Technologies
Description: IC AMP CLASS D STEREO 35W 44QFN
Part Status: Obsolete
Supplier Device Package: 44-PQFN (7x7)
Max Output Power x Channels @ Load: 35W x 2 @ 4Ohm
Voltage - Supply: 10V ~ 15V
Operating Temperature: -40°C ~ 100°C (TA)
Type: Class D
Mounting Type: Surface Mount
Output Type: 2-Channel (Stereo)
Package / Case: 44-PowerVFQFN
Features: Depop, Differential Inputs
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IRAUDAMP18 iraudamp18.pdf_fileid=5546d462533600a40153569a96eb2be9.pdf
IRAUDAMP18
Hersteller: Infineon Technologies
Description: BOARD EVAL FOR IR4312
Part Status: Active
Supplied Contents: Board(s)
Utilized IC / Part: IR4312
Board Type: Fully Populated
Max Output Power x Channels @ Load: 35W x 2 @ 4Ohm
Voltage - Supply: 18V ~ 31V
Amplifier Type: Class D
Output Type: 2-Channel (Stereo)
Packaging: Bulk
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+314.3 EUR
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IRAUDAMP15 iraudamp15.pdf?fileId=5546d462533600a4015356973e6e2bdf
IRAUDAMP15
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR IR4311
Contents: Board(s)
Part Status: Active
Supplied Contents: Board(s)
Utilized IC / Part: IR4311
Board Type: Fully Populated
Max Output Power x Channels @ Load: 35W x 2 @ 4Ohm
Voltage - Supply: 18V ~ 31V
Amplifier Type: Class D
Output Type: 2-Channel (Stereo)
Packaging: Bulk
Produkt ist nicht verfügbar
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IRGP4640D-EPBF IRGx4640D%28-E%29PbF.pdf
IRGP4640D-EPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 65A TO-247AC
Power - Max: 250 W
Current - Collector Pulsed (Icm): 72 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 65 A
Part Status: Obsolete
Gate Charge: 75 nC
Test Condition: 400V, 24A, 10Ohm, 15V
Switching Energy: 115µJ (on), 600µJ (off)
Td (on/off) @ 25°C: 41ns/104ns
Supplier Device Package: TO-247AC
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
Reverse Recovery Time (trr): 89 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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IRGP4650DPBF IRSD-S-A0000175678-1.pdf?t.download=true&u=5oefqw
IRGP4650DPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 76A TO-247AC
Power - Max: 268 W
Current - Collector Pulsed (Icm): 105 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 76 A
Part Status: Obsolete
Gate Charge: 104 nC
Test Condition: 400V, 35A, 10Ohm, 15V
Switching Energy: 390µJ (on), 632µJ (off)
Td (on/off) @ 25°C: 46ns/105ns
Supplier Device Package: TO-247AC
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 35A
Reverse Recovery Time (trr): 120 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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IRGP4640DPBF IRGx4640D%28-E%29PbF.pdf
IRGP4640DPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 65A TO-247AD
Power - Max: 250 W
Current - Collector Pulsed (Icm): 72 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 65 A
Part Status: Obsolete
Gate Charge: 75 nC
Test Condition: 400V, 24A, 10Ohm, 15V
Switching Energy: 115µJ (on), 600µJ (off)
Td (on/off) @ 25°C: 41ns/104ns
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
Reverse Recovery Time (trr): 89 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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IRFR220NTRLPBF irfr220npbf.pdf?fileId=5546d462533600a40153562d8a7b206f
IRFR220NTRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.9A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
Produkt ist nicht verfügbar
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IRLR3410TRLPBF irlr3410pbf.pdf?fileId=5546d462533600a40153566d14c52695
IRLR3410TRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 17A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
auf Bestellung 33859 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.32 EUR
15+1.46 EUR
50+1.08 EUR
100+0.96 EUR
500+0.75 EUR
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IR2184STRPBF ir2184.pdf?fileId=5546d462533600a4015355c955e616d4
IR2184STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRFR6215TRLPBF irfr6215pbf.pdf?fileId=5546d462533600a40153563595592114
IRFR6215TRLPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 150V 13A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 295mOhm @ 6.6A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
auf Bestellung 2757 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.81 EUR
10+2.43 EUR
100+1.64 EUR
500+1.3 EUR
1000+1.19 EUR
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IR2010STRPBF ir2010.pdf?fileId=5546d462533600a4015355c48f901660
IR2010STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 10ns, 15ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 3A, 3A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 2871 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.87 EUR
10+4.41 EUR
25+4.05 EUR
100+3.64 EUR
250+3.45 EUR
500+3.34 EUR
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IR11672ASTRPBF ir11672aspbf.pdf?fileId=5546d462533600a4015355c455561653
IR11672ASTRPBF
Hersteller: Infineon Technologies
Description: IC REC SMART CONTROL 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Voltage - Input: 200V
Operating Temperature: -25°C ~ 125°C (TJ)
Voltage - Supply: 11.4V ~ 18V
Applications: Secondary-Side Controller
Supplier Device Package: 8-SOIC
Part Status: Active
Current - Supply: 50 mA
DigiKey Programmable: Not Verified
auf Bestellung 5490 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+4.11 EUR
10+3.05 EUR
25+2.77 EUR
100+2.49 EUR
250+2.34 EUR
500+2.27 EUR
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IRLR2908TRPBF irlr2908pbf.pdf?fileId=5546d462533600a40153566cdace2681
IRLR2908TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 30A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 23A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V
auf Bestellung 10568 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.56 EUR
10+2.26 EUR
50+1.7 EUR
100+1.52 EUR
500+1.2 EUR
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IRS2153DSTRPBF IRSDS08244-1.pdf?t.download=true&u=5oefqw
IRS2153DSTRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.4V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 120ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 180mA, 260mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 1545 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.53 EUR
12+1.84 EUR
25+1.67 EUR
100+1.48 EUR
250+1.39 EUR
500+1.33 EUR
1000+1.32 EUR
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IR21094STRPBF ir2109.pdf?fileId=5546d462533600a4015355c7e85b1679
IR21094STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 14492 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+4.06 EUR
10+3 EUR
25+2.74 EUR
100+2.45 EUR
250+2.31 EUR
500+2.24 EUR
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IR3856MTRPBF ir3856m.pdf?fileId=5546d462533600a4015355d5818517f8
IR3856MTRPBF
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJ 6A 17PQFN
Voltage - Output (Min/Fixed): 0.7V
Voltage - Input (Min): 1.5V
Voltage - Output (Max): 18.9V
Synchronous Rectifier: Yes
Supplier Device Package: 17-PQFN (4x5)
Topology: Buck
Voltage - Input (Max): 21V
Frequency - Switching: 225kHz ~ 1.65MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 6A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 17-PowerVQFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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IRLHS6242TRPBF irlhs6242pbf.pdf?fileId=5546d462533600a401535663a52d25a9
IRLHS6242TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 10A/12A 6PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 8.5A, 4.5V
Power Dissipation (Max): 1.98W (Ta), 9.6W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: 6-PQFN (2x2) (DFN2020)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 10 V
auf Bestellung 98270 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+2.05 EUR
17+1.29 EUR
50+0.95 EUR
100+0.84 EUR
500+0.65 EUR
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IRS2304STRPBF irs2304spbf.pdf?fileId=5546d462533600a40153567a8fe72802
IRS2304STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Current - Peak Output (Source, Sink): 290mA, 600mA
Logic Voltage - VIL, VIH: 0.7V, 2.3V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 70ns, 35ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 3333 Stücke:
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10+2.2 EUR
14+1.58 EUR
25+1.43 EUR
100+1.26 EUR
250+1.19 EUR
500+1.14 EUR
1000+1.12 EUR
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IRFH5300TRPBF irfh5300pbf.pdf?fileId=5546d462533600a40153561b3e141ebc
IRFH5300TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 40A/100A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 15 V
auf Bestellung 7524 Stücke:
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AnzahlPrivatkunde
7+3.45 EUR
10+2.2 EUR
50+1.65 EUR
100+1.48 EUR
500+1.17 EUR
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IRF9389TRPBF irf9389pbf.pdf?fileId=5546d462533600a40153561178901daf
IRF9389TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 30V 6.8A/4.6A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.8A, 4.6A
Input Capacitance (Ciss) (Max) @ Vds: 398pF @ 15V
Rds On (Max) @ Id, Vgs: 27mOhm @ 6.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.3V @ 10µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 72000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4000+0.35 EUR
8000+0.32 EUR
12000+0.31 EUR
20000+0.3 EUR
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IRF9389TRPBF irf9389pbf.pdf?fileId=5546d462533600a40153561178901daf
IRF9389TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 30V 6.8A/4.6A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.8A, 4.6A
Input Capacitance (Ciss) (Max) @ Vds: 398pF @ 15V
Rds On (Max) @ Id, Vgs: 27mOhm @ 6.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.3V @ 10µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 75036 Stücke:
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AnzahlPrivatkunde
14+1.52 EUR
23+0.95 EUR
100+0.61 EUR
500+0.46 EUR
1000+0.42 EUR
2000+0.38 EUR
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BFP840ESDH6327XTSA1 Infineon-BFP840ESD-DS-v02_00-EN.pdf?fileId=5546d46265f064ff01663896bcab4eb6
BFP840ESDH6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 2.25V 80GHZ SOT-343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 18.5dB
Power - Max: 75mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 2.25V
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 1.8V
Frequency - Transition: 80GHz
Noise Figure (dB Typ @ f): 0.85dB @ 5.5GHz
Supplier Device Package: PG-SOT343-4-2
Produkt ist nicht verfügbar
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BFP840FESDH6327XTSA1 Infineon-BFP840FESD-DS-v02_00-EN.pdf?fileId=5546d46265f064ff01663896c6294eb9
BFP840FESDH6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 2.6V 85GHZ 4TSFP-4
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 35dB
Power - Max: 75mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 2.6V
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 1.8V
Frequency - Transition: 85GHz
Noise Figure (dB Typ @ f): 0.75dB @ 5.5GHz
Supplier Device Package: PG-TSFP-4-1
auf Bestellung 48000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.49 EUR
6000+0.48 EUR
9000+0.46 EUR
30000+0.45 EUR
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BFP842ESDH6327XTSA1 Infineon-BFP842ESD-DS-v02_00-EN.pdf?fileId=5546d46265f064ff01663896cf294ebc
BFP842ESDH6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 3.7V 60GHZ SOT-343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 26dB
Power - Max: 120mW
Current - Collector (Ic) (Max): 40mA
Voltage - Collector Emitter Breakdown (Max): 3.7V
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 15mA, 2.5V
Frequency - Transition: 60GHz
Noise Figure (dB Typ @ f): 0.65dB @ 3.5GHz
Supplier Device Package: PG-SOT343-4-2
Part Status: Active
Produkt ist nicht verfügbar
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BGA 712L16 E6327 fundamentals-of-power-semiconductors
BGA 712L16 E6327
Hersteller: Infineon Technologies
Description: IC RF AMP MMIC RF LNA TSLP-16
Packaging: Tape & Reel (TR)
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
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7500+1.44 EUR
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BGA725L6E6327FTSA1 BGA725L6_V2+0.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433784a0400137ef9a4d341f23
BGA725L6E6327FTSA1
Hersteller: Infineon Technologies
Description: IC AMP GPS 1.55-1.615GHZ TSLP6-2
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: GPS/GNSS
Voltage - Supply: 1.5V ~ 3.6V
Gain: 20dB
Current - Supply: 3.6mA
Noise Figure: 0.65dB
P1dB: -16dBm
Supplier Device Package: TSLP-6-2
Part Status: Active
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
15000+0.4 EUR
Mindestbestellmenge: 15000 Stücke
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BGA749N16E6327XTSA1 fundamentals-of-power-semiconductors
BGA749N16E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF AMP GPS 940MHZ TSNP7-1
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 940MHz
RF Type: General Purpose
Voltage - Supply: 3.6V
Gain: 16.1dB
Current - Supply: 10mA
Noise Figure: 1.2dB
Supplier Device Package: PG-TSNP-7-1
Produkt ist nicht verfügbar
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BGA 925L6 E6327 BGA925L6.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a3043327f13e30132a4db54e64337
BGA 925L6 E6327
Hersteller: Infineon Technologies
Description: IC AMP MMIC RF GNSS LNA TSLP-6
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
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BGB719N7ESDE6327XTMA1 fundamentals-of-power-semiconductors
BGB719N7ESDE6327XTMA1
Hersteller: Infineon Technologies
Description: IC RF AMP FM 10MHZ-1GHZ TSNP7-6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 10MHz ~ 1GHz
RF Type: FM
Voltage - Supply: 3V
Gain: 13.5dB
Current - Supply: 2.8mA
Noise Figure: 1.2dB
P1dB: -6dBm
Test Frequency: 100MHz
Supplier Device Package: PG-TSNP-7-6
Produkt ist nicht verfügbar
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BGM 1034N7 E6327 bgm1034N7.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a304334fac4c60134fafa93ce0011
BGM 1034N7 E6327
Hersteller: Infineon Technologies
Description: IC AMP MMIC RF 17.0DB TSNP-7
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 3000 Stücke
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BGS15AN16E6327XTSA1 BGS15AN16_v2_1.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433f1b26e8013f2d44cb463811
BGS15AN16E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH SP5T 3GHZ TSNP16-3
Produkt ist nicht verfügbar
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BGSF18DM20E6327XUMA1 fundamentals-of-power-semiconductors
BGSF18DM20E6327XUMA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH SP8T
Packaging: Tape & Reel (TR)
Circuit: SP8T
RF Type: Cellular, 3G, GSM
Produkt ist nicht verfügbar
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ESD3V3S1B02LRHE6327XTSA1 ESD3V3S1B_ESD_Transient_Protection_Diode_Infineon.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a3043382e837301385c223ad03336
ESD3V3S1B02LRHE6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 3.3VWM 6.8VC TSLP2-17
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
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ESD3V3XU1USE6327XTSA1 ESD3V3XU1US.pdf
ESD3V3XU1USE6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 3.3VWM 11VC TSSLP-2-1
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSSLP-2-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.5V (Typ)
Voltage - Clamping (Max) @ Ipp: 11V (Typ)
Power Line Protection: No
Produkt ist nicht verfügbar
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TVS3V3L4UE6327HTSA1 TVS3V3L4U_rev_2_2.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a3043382e837301385be7912532ed
TVS3V3L4UE6327HTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 3.3VWM 7.7VC PGSC746
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 20A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-SC74-6
Unidirectional Channels: 4
Bidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 7.7V (Typ)
Power Line Protection: No
auf Bestellung 54000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.37 EUR
6000+0.36 EUR
Mindestbestellmenge: 3000 Stücke
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BFP840ESDH6327XTSA1 Infineon-BFP840ESD-DS-v02_00-EN.pdf?fileId=5546d46265f064ff01663896bcab4eb6
BFP840ESDH6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 2.25V 80GHZ SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 18.5dB
Power - Max: 75mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 2.25V
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 1.8V
Frequency - Transition: 80GHz
Noise Figure (dB Typ @ f): 0.85dB @ 5.5GHz
Supplier Device Package: PG-SOT343-4-2
auf Bestellung 2640 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
22+0.96 EUR
32+0.67 EUR
36+0.6 EUR
100+0.52 EUR
250+0.48 EUR
500+0.46 EUR
1000+0.44 EUR
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BFP840FESDH6327XTSA1 Infineon-BFP840FESD-DS-v02_00-EN.pdf?fileId=5546d46265f064ff01663896c6294eb9
BFP840FESDH6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 2.6V 85GHZ 4TSFP-4
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 35dB
Power - Max: 75mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 2.6V
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 1.8V
Frequency - Transition: 85GHz
Noise Figure (dB Typ @ f): 0.75dB @ 5.5GHz
Supplier Device Package: PG-TSFP-4-1
auf Bestellung 50185 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
20+1.09 EUR
27+0.77 EUR
31+0.69 EUR
100+0.61 EUR
250+0.56 EUR
500+0.54 EUR
1000+0.51 EUR
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BFP842ESDH6327XTSA1 Infineon-BFP842ESD-DS-v02_00-EN.pdf?fileId=5546d46265f064ff01663896cf294ebc
BFP842ESDH6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 3.7V 60GHZ SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 26dB
Power - Max: 120mW
Current - Collector (Ic) (Max): 40mA
Voltage - Collector Emitter Breakdown (Max): 3.7V
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 15mA, 2.5V
Frequency - Transition: 60GHz
Noise Figure (dB Typ @ f): 0.65dB @ 3.5GHz
Supplier Device Package: PG-SOT343-4-2
Part Status: Active
auf Bestellung 52 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
22+0.96 EUR
32+0.67 EUR
36+0.6 EUR
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BGA725L6E6327FTSA1 BGA725L6_V2+0.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433784a0400137ef9a4d341f23
BGA725L6E6327FTSA1
Hersteller: Infineon Technologies
Description: IC AMP GPS 1.55-1.615GHZ TSLP6-2
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: GPS/GNSS
Voltage - Supply: 1.5V ~ 3.6V
Gain: 20dB
Current - Supply: 3.6mA
Noise Figure: 0.65dB
P1dB: -16dBm
Supplier Device Package: TSLP-6-2
Part Status: Active
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
29+0.74 EUR
34+0.63 EUR
36+0.6 EUR
100+0.54 EUR
250+0.51 EUR
500+0.49 EUR
1000+0.46 EUR
5000+0.43 EUR
Mindestbestellmenge: 29 Stücke
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BGA749N16E6327XTSA1 fundamentals-of-power-semiconductors
BGA749N16E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF AMP GPS 940MHZ TSNP7-1
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 940MHz
RF Type: General Purpose
Voltage - Supply: 3.6V
Gain: 16.1dB
Current - Supply: 10mA
Noise Figure: 1.2dB
Supplier Device Package: PG-TSNP-7-1
auf Bestellung 7490 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+4.11 EUR
10+3.55 EUR
25+3.34 EUR
100+3.07 EUR
250+2.92 EUR
500+2.8 EUR
1000+2.69 EUR
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BGA 925L6 E6327 BGA925L6.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a3043327f13e30132a4db54e64337
BGA 925L6 E6327
Hersteller: Infineon Technologies
Description: IC AMP MMIC RF GNSS LNA TSLP-6
auf Bestellung 23159 Stücke:
Lieferzeit 10-14 Tag (e)
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BGB719N7ESDE6327XTMA1 fundamentals-of-power-semiconductors
BGB719N7ESDE6327XTMA1
Hersteller: Infineon Technologies
Description: IC RF AMP FM 10MHZ-1GHZ TSNP7-6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 10MHz ~ 1GHz
RF Type: FM
Voltage - Supply: 3V
Gain: 13.5dB
Current - Supply: 2.8mA
Noise Figure: 1.2dB
P1dB: -6dBm
Test Frequency: 100MHz
Supplier Device Package: PG-TSNP-7-6
auf Bestellung 2286 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
17+1.27 EUR
21+1 EUR
25+0.93 EUR
100+0.86 EUR
250+0.81 EUR
500+0.8 EUR
1000+0.77 EUR
Mindestbestellmenge: 17 Stücke
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BGM 1034N7 E6327 bgm1034N7.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a304334fac4c60134fafa93ce0011
BGM 1034N7 E6327
Hersteller: Infineon Technologies
Description: IC AMP MMIC RF 17.0DB TSNP-7
auf Bestellung 16295 Stücke:
Lieferzeit 10-14 Tag (e)
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BGS15AN16E6327XTSA1 BGS15AN16_v2_1.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433f1b26e8013f2d44cb463811
BGS15AN16E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH SP5T 3GHZ TSNP16-3
Produkt ist nicht verfügbar
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ESD1P0RFWH6327XTSA1 esd1p0rfseries.pdf?folderId=db3a30431441fb5d01149221c9230fb2&fileId=db3a30431441fb5d01149228afda0fc7
ESD1P0RFWH6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 70VWM 15VC PGSOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet, HDMI, RF Antenna
Capacitance @ Frequency: 1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 70V (Max)
Supplier Device Package: PG-SOT323
Unidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 15V
Power Line Protection: No
Produkt ist nicht verfügbar
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ESD3V3S1B02LRHE6327XTSA1 ESD3V3S1B_ESD_Transient_Protection_Diode_Infineon.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a3043382e837301385c223ad03336
ESD3V3S1B02LRHE6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 3.3VWM 6.8VC TSLP2-17
Produkt ist nicht verfügbar
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ESD3V3XU1USE6327XTSA1 ESD3V3XU1US.pdf
ESD3V3XU1USE6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 3.3VWM 11VC TSSLP-2-1
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 11V (Typ)
Voltage - Breakdown (Min): 6.5V (Typ)
Unidirectional Channels: 1
Supplier Device Package: PG-TSSLP-2-1
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Capacitance @ Frequency: 0.4pF @ 1MHz
Applications: Ethernet, HDMI
Operating Temperature: -40°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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TVS3V3L4UE6327HTSA1 TVS3V3L4U_rev_2_2.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a3043382e837301385be7912532ed
TVS3V3L4UE6327HTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 3.3VWM 7.7VC PGSC746
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 20A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-SC74-6
Unidirectional Channels: 4
Bidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 7.7V (Typ)
Power Line Protection: No
auf Bestellung 54821 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+1.93 EUR
18+1.2 EUR
100+0.79 EUR
500+0.61 EUR
1000+0.55 EUR
Mindestbestellmenge: 11 Stücke
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BGA 925L6 E6327 BGA925L6.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a3043327f13e30132a4db54e64337
BGA 925L6 E6327
Hersteller: Infineon Technologies
Description: IC AMP MMIC RF GNSS LNA TSLP-6
auf Bestellung 23159 Stücke:
Lieferzeit 10-14 Tag (e)
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BGM 1034N7 E6327 bgm1034N7.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a304334fac4c60134fafa93ce0011
BGM 1034N7 E6327
Hersteller: Infineon Technologies
Description: IC AMP MMIC RF 17.0DB TSNP-7
auf Bestellung 16330 Stücke:
Lieferzeit 10-14 Tag (e)
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ESD3V3S1B02LRHE6327XTSA1 ESD3V3S1B_ESD_Transient_Protection_Diode_Infineon.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a3043382e837301385c223ad03336
ESD3V3S1B02LRHE6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 3.3VWM 6.8VC TSLP2-17
Produkt ist nicht verfügbar
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BAR5002VH6327XTSA1 bar50series.pdf?folderId=db3a304314dca3890114fea780a30a91&fileId=db3a304314dca3890114fea7dd410a92
BAR5002VH6327XTSA1
Hersteller: Infineon Technologies
Description: RF DIODE PIN 50V 250MW PG-SC79-2
Power Dissipation (Max): 250 mW
Current - Max: 100 mA
Part Status: Active
Supplier Device Package: PG-SC79-2
Voltage - Peak Reverse (Max): 50V
Resistance @ If, F: 4.5Ohm @ 10mA, 100MHz
Capacitance @ Vr, F: 0.4pF @ 5V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: PIN - Single
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
auf Bestellung 7132 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
84+0.25 EUR
124+0.17 EUR
142+0.14 EUR
167+0.13 EUR
250+0.11 EUR
500+0.11 EUR
1000+0.1 EUR
Mindestbestellmenge: 84 Stücke
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BAR6306WH6327XTSA1 INFNS15694-1.pdf?t.download=true&u=5oefqw
BAR6306WH6327XTSA1
Hersteller: Infineon Technologies
Description: RF DIODE PIN 50V 250MW PG-SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT323
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
Produkt ist nicht verfügbar
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BAR6406E6327HTSA1 Infineon-BAR64-06-DS-v01_01-EN.pdf?fileId=5546d462689a790c01690f0300ea3908
BAR6406E6327HTSA1
Hersteller: Infineon Technologies
Description: RF DIODE PIN 150V 250MW PG-SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
auf Bestellung 1325 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
63+0.33 EUR
97+0.21 EUR
110+0.19 EUR
129+0.17 EUR
250+0.15 EUR
500+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 63 Stücke
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BAR6502VH6327XTSA1 bar65series.pdf?folderId=db3a304314dca3890114fea780a30a91&fileId=db3a304314dca3890114ff1c81b50af0
BAR6502VH6327XTSA1
Hersteller: Infineon Technologies
Description: RF DIODE PIN 30V 250MW PG-SC79-2
Power Dissipation (Max): 250 mW
Current - Max: 100 mA
Part Status: Active
Supplier Device Package: PG-SC79-2
Voltage - Peak Reverse (Max): 30V
Resistance @ If, F: 900mOhm @ 10mA, 100MHz
Capacitance @ Vr, F: 0.8pF @ 3V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: PIN - Single
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
auf Bestellung 8092 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
91+0.23 EUR
136+0.15 EUR
155+0.13 EUR
184+0.11 EUR
250+0.1 EUR
500+0.099 EUR
1000+0.093 EUR
Mindestbestellmenge: 91 Stücke
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BAR81WH6327XTSA1 bar81series.pdf?folderId=db3a304314dca3890114fea780a30a91&fileId=db3a304314dca3890114ff203eb70af2
BAR81WH6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE STANDAR 30V 100MW SOT343-4
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Diode Type: Standard - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.9pF @ 3V, 1MHz
Resistance @ If, F: 1Ohm @ 5mA, 100MHz
Voltage - Peak Reverse (Max): 30V
Supplier Device Package: PG-SOT343-4-2
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 100 mW
auf Bestellung 23058 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
18+1.18 EUR
26+0.82 EUR
29+0.74 EUR
100+0.64 EUR
250+0.6 EUR
500+0.57 EUR
1000+0.55 EUR
Mindestbestellmenge: 18 Stücke
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BAR9002LSE6327XTSA1 bar90series.pdf
BAR9002LSE6327XTSA1
Hersteller: Infineon Technologies
Description: RF DIODE PIN 80V 150MW TSSLP-2
Supplier Device Package: PG-TSSLP-2-1
Voltage - Peak Reverse (Max): 80V
Resistance @ If, F: 800mOhm @ 10mA, 100MHz
Capacitance @ Vr, F: 0.35pF @ 1V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: PIN - Single
Package / Case: 0201 (0603 Metric)
Packaging: Cut Tape (CT)
Power Dissipation (Max): 150 mW
Current - Max: 100 mA
Part Status: Obsolete
Produkt ist nicht verfügbar
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