Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (149885) > Seite 198 nach 2499
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FM22L16-55-TG | Infineon Technologies |
Description: IC FRAM 4MBIT PARALLEL 44TSOP IIPackaging: Tray Package / Case: 44-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FRAM (Ferroelectric RAM) Memory Format: FRAM Supplier Device Package: 44-TSOP II Part Status: Active Write Cycle Time - Word, Page: 110ns Memory Interface: Parallel Access Time: 110 ns Memory Organization: 256K x 16 DigiKey Programmable: Not Verified |
auf Bestellung 366 Stücke: Lieferzeit 10-14 Tag (e) |
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FM24C16B-G | Infineon Technologies |
Description: IC FRAM 16KBIT I2C 1MHZ 8SOICPackaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 16Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: FRAM (Ferroelectric RAM) Clock Frequency: 1 MHz Memory Format: FRAM Supplier Device Package: 8-SOIC Part Status: Active Memory Interface: I2C Access Time: 550 ns Memory Organization: 2K x 8 DigiKey Programmable: Not Verified |
auf Bestellung 1430 Stücke: Lieferzeit 10-14 Tag (e) |
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FM24CL04B-G | Infineon Technologies |
Description: IC FRAM 4KBIT I2C 1MHZ 8SOICPackaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 4Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FRAM (Ferroelectric RAM) Clock Frequency: 1 MHz Memory Format: FRAM Supplier Device Package: 8-SOIC Part Status: Active Memory Interface: I2C Access Time: 550 ns Memory Organization: 512 x 8 DigiKey Programmable: Not Verified |
auf Bestellung 1678 Stücke: Lieferzeit 10-14 Tag (e) |
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FM24CL16B-DG | Infineon Technologies |
Description: IC FRAM 16KBIT I2C 1MHZ 8DFNPackaging: Tube Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 16Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FRAM (Ferroelectric RAM) Clock Frequency: 1 MHz Memory Format: FRAM Supplier Device Package: 8-DFN (4x4.5) Part Status: Active Memory Interface: I2C Access Time: 550 ns Memory Organization: 2K x 8 DigiKey Programmable: Not Verified |
auf Bestellung 1286 Stücke: Lieferzeit 10-14 Tag (e) |
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FM24CL64B-DG | Infineon Technologies |
Description: IC FRAM 64KBIT I2C 1MHZ 8DFNPackaging: Tube Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 64Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FRAM (Ferroelectric RAM) Clock Frequency: 1 MHz Memory Format: FRAM Supplier Device Package: 8-DFN (4x4.5) Part Status: Active Memory Interface: I2C Access Time: 550 ns Memory Organization: 8K x 8 DigiKey Programmable: Not Verified |
auf Bestellung 1243 Stücke: Lieferzeit 10-14 Tag (e) |
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FM25CL64B-DG | Infineon Technologies |
Description: IC FRAM 64KBIT SPI 20MHZ 8DFNPackaging: Tube Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 64Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FRAM (Ferroelectric RAM) Clock Frequency: 20 MHz Memory Format: FRAM Supplier Device Package: 8-DFN (4x4.5) Part Status: Active Memory Interface: SPI Memory Organization: 8K x 8 DigiKey Programmable: Not Verified |
auf Bestellung 8131 Stücke: Lieferzeit 10-14 Tag (e) |
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FM25H20-DG | Infineon Technologies |
Description: IC FRAM 2MBIT SPI 40MHZ 8DFNPackaging: Tube Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 2Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FRAM (Ferroelectric RAM) Clock Frequency: 40 MHz Memory Format: FRAM Supplier Device Package: 8-DFN (5x6) Memory Interface: SPI Memory Organization: 256K x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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FM25L04B-DG | Infineon Technologies |
Description: IC FRAM 4KBIT SPI 20MHZ 8DFNPackaging: Tube Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 4Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FRAM (Ferroelectric RAM) Clock Frequency: 20 MHz Memory Format: FRAM Supplier Device Package: 8-DFN (4x4.5) Part Status: Active Memory Interface: SPI Memory Organization: 512 x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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FM25L16B-DG | Infineon Technologies |
Description: IC FRAM 16KBIT SPI 20MHZ 8DFNPackaging: Tube Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 16Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FRAM (Ferroelectric RAM) Clock Frequency: 20 MHz Memory Format: FRAM Supplier Device Package: 8-DFN (4x4.5) Part Status: Active Memory Interface: SPI Memory Organization: 2K x 8 DigiKey Programmable: Not Verified |
auf Bestellung 92 Stücke: Lieferzeit 10-14 Tag (e) |
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FM25L16B-G | Infineon Technologies |
Description: IC FRAM 16KBIT SPI 20MHZ 8SOICPackaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 16Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FRAM (Ferroelectric RAM) Clock Frequency: 20 MHz Memory Format: FRAM Supplier Device Package: 8-SOIC Part Status: Active Memory Interface: SPI Memory Organization: 2K x 8 DigiKey Programmable: Not Verified |
auf Bestellung 1095 Stücke: Lieferzeit 10-14 Tag (e) |
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FM25V02-DG | Infineon Technologies |
Description: IC FRAM 256KBIT SPI 40MHZ 8DFNPackaging: Tube Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 256Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 3.6V Technology: FRAM (Ferroelectric RAM) Clock Frequency: 40 MHz Memory Format: FRAM Supplier Device Package: 8-DFN (4x4.5) Part Status: Obsolete Memory Interface: SPI Memory Organization: 32K x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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FM25V20-DG | Infineon Technologies |
Description: IC FRAM 2MBIT SPI 40MHZ 8DFNPackaging: Tube Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 2Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 3.6V Technology: FRAM (Ferroelectric RAM) Clock Frequency: 40 MHz Memory Format: FRAM Supplier Device Package: 8-DFN (5x6) Part Status: Obsolete Memory Interface: SPI Memory Organization: 256K x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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BA595E6327HTSA1 | Infineon Technologies |
Description: RF DIODE PIN 50V SOD323-2Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Diode Type: PIN - Single Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.6pF @ 10V, 1MHz Resistance @ If, F: 7Ohm @ 10mA, 100MHz Voltage - Peak Reverse (Max): 50V Supplier Device Package: PG-SOD323-2 Part Status: Obsolete Current - Max: 50 mA |
Produkt ist nicht verfügbar |
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BA89202VH6127XTSA1 | Infineon Technologies |
Description: RF DIODE STANDARD 35V SC79-2Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Diode Type: Standard - Single Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz Resistance @ If, F: 500mOhm @ 10mA, 100MHz Voltage - Peak Reverse (Max): 35V Supplier Device Package: PG-SC79-2 Part Status: Not For New Designs Current - Max: 100 mA |
auf Bestellung 71831 Stücke: Lieferzeit 10-14 Tag (e) |
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BAL74E6327HTSA1 | Infineon Technologies |
Description: DIODE STANDARD 50V 250MA PGSOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: PG-SOT23 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V |
Produkt ist nicht verfügbar |
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BAL99E6327HTSA1 | Infineon Technologies |
Description: DIODE STANDARD 80V 250MA PGSOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: PG-SOT23 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 1 µA @ 70 V |
Produkt ist nicht verfügbar |
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BAR6302VH6327XTSA1 | Infineon Technologies |
Description: RF DIODE PIN 50V 250MW PG-SC79-2Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Diode Type: PIN - Single Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz Resistance @ If, F: 1Ohm @ 10mA, 100MHz Voltage - Peak Reverse (Max): 50V Supplier Device Package: PG-SC79-2 Part Status: Active Current - Max: 100 mA Power Dissipation (Max): 250 mW |
auf Bestellung 238 Stücke: Lieferzeit 10-14 Tag (e) |
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BAR6304E6327HTSA1 | Infineon Technologies |
Description: RF DIODE PIN 50V 250MW PG-SOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Diode Type: PIN - 1 Pair Series Connection Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz Resistance @ If, F: 1Ohm @ 10mA, 100MHz Voltage - Peak Reverse (Max): 50V Supplier Device Package: PG-SOT23 Part Status: Active Current - Max: 100 mA Power Dissipation (Max): 250 mW |
auf Bestellung 11280 Stücke: Lieferzeit 10-14 Tag (e) |
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BAR6404E6327HTSA1 | Infineon Technologies |
Description: RF DIODE PIN 150V 250MW PG-SOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Diode Type: PIN - 1 Pair Series Connection Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz Voltage - Peak Reverse (Max): 150V Supplier Device Package: PG-SOT23 Part Status: Active Current - Max: 100 mA Power Dissipation (Max): 250 mW |
auf Bestellung 3261 Stücke: Lieferzeit 10-14 Tag (e) |
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BAR6405E6327HTSA1 | Infineon Technologies |
Description: RF DIODE PIN 150V 250MW PG-SOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Diode Type: PIN - 1 Pair Common Cathode Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz Voltage - Peak Reverse (Max): 150V Supplier Device Package: PG-SOT23 Part Status: Active Current - Max: 100 mA Power Dissipation (Max): 250 mW |
auf Bestellung 11703 Stücke: Lieferzeit 10-14 Tag (e) |
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BAR9002LRHE6327XTSA1 | Infineon Technologies |
Description: RF DIODE PIN 80V 250MW TSLP-2Packaging: Cut Tape (CT) Package / Case: SOD-882 Diode Type: PIN - Single Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.35pF @ 1V, 1MHz Resistance @ If, F: 800mOhm @ 10mA, 100MHz Voltage - Peak Reverse (Max): 80V Supplier Device Package: PG-TSLP-2-7 Part Status: Obsolete Current - Max: 100 mA Power Dissipation (Max): 250 mW |
Produkt ist nicht verfügbar |
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BAS116E6327HTSA1 | Infineon Technologies |
Description: DIODE STANDARD 80V 250MA PGSOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: PG-SOT23 Operating Temperature - Junction: 150°C (Max) Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 5 nA @ 75 V |
auf Bestellung 125848 Stücke: Lieferzeit 10-14 Tag (e) |
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BAS140WE6327HTSA1 | Infineon Technologies |
Description: DIODE SCHOT 40V 120MA PGSOD3233DPackaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 100 ps Technology: Schottky Capacitance @ Vr, F: 5pF @ 0V, 1MHz Current - Average Rectified (Io): 120mA Supplier Device Package: PG-SOD323-3D Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA Current - Reverse Leakage @ Vr: 1 µA @ 30 V |
Produkt ist nicht verfügbar |
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BAS1602WH6327XTSA1 | Infineon Technologies |
Description: DIODE GEN PURP 80V 200MA SCD80-2 |
Produkt ist nicht verfügbar |
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BAS1603WE6327HTSA1 | Infineon Technologies |
Description: DIODE STD 80V 250MA PGSOD3233DPackaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: PG-SOD323-3D Operating Temperature - Junction: 150°C (Max) Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 1 µA @ 75 V |
Produkt ist nicht verfügbar |
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BAS16SH6327XTSA1 | Infineon Technologies |
Description: DIODE ARR GP 80V 200MA SOT363-POPackaging: Cut Tape (CT) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 3 Independent Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: PG-SOT363-PO Operating Temperature - Junction: 150°C (Max) Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 1 µA @ 75 V |
auf Bestellung 53025 Stücke: Lieferzeit 10-14 Tag (e) |
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BAS170WE6327HTSA1 | Infineon Technologies |
Description: DIODE SCHOTT 70V 70MA PGSOD3233DPackaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 100 ps Technology: Schottky Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 70mA Supplier Device Package: PG-SOD323-3D Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 35247 Stücke: Lieferzeit 10-14 Tag (e) |
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BAS28E6327HTSA1 | Infineon Technologies |
Description: DIODE ARR GP 80V 200MA SOT1433DPackaging: Cut Tape (CT) Package / Case: TO-253-4, TO-253AA Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: PG-SOT-143-3D Operating Temperature - Junction: 150°C (Max) Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 100 nA @ 75 V |
auf Bestellung 702 Stücke: Lieferzeit 10-14 Tag (e) |
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BAS3010S02LRHE6327XTSA1 | Infineon Technologies |
Description: DIODE SCHOTTKY 30V 1A PGTSLP217Packaging: Cut Tape (CT) Package / Case: SOD-882 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 15pF @ 5V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: PG-TSLP-2-17 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 1 A Current - Reverse Leakage @ Vr: 300 µA @ 30 V |
auf Bestellung 23204 Stücke: Lieferzeit 10-14 Tag (e) |
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BAS4007E6327HTSA1 | Infineon Technologies |
Description: DIODE ARR SCHOTT 40V SOT-143-3DPackaging: Cut Tape (CT) Package / Case: TO-253-4, TO-253AA Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 100 ps Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 120mA (DC) Supplier Device Package: PG-SOT-143-3D Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA Current - Reverse Leakage @ Vr: 1 µA @ 30 V |
auf Bestellung 2755 Stücke: Lieferzeit 10-14 Tag (e) |
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BAS5202VH6327XTSA1 | Infineon Technologies |
Description: DIODE SCHOTTKY 45V 750MA PGSC792Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 10pF @ 10V, 1MHz Current - Average Rectified (Io): 750mA Supplier Device Package: PG-SC79-2 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 45 V |
auf Bestellung 238 Stücke: Lieferzeit 10-14 Tag (e) |
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BAS7002WH6327XTSA1 | Infineon Technologies |
Description: DIODE SCHOTTKY 70V 70MA SCD80-2 |
Produkt ist nicht verfügbar |
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BAS7007E6327HTSA1 | Infineon Technologies |
Description: DIODE ARR SCHOTT 70V SOT-143-3DPackaging: Cut Tape (CT) Package / Case: TO-253-4, TO-253AA Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 100 ps Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 70mA (DC) Supplier Device Package: PG-SOT-143-3D Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V |
auf Bestellung 16259 Stücke: Lieferzeit 10-14 Tag (e) |
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BAS7007WH6327XTSA1 | Infineon Technologies |
Description: DIODE ARR SCHOTT 70V SOT343-4-1Packaging: Cut Tape (CT) Package / Case: SC-82A, SOT-343 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 100 ps Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 70mA (DC) Supplier Device Package: PG-SOT343-4-1 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V |
auf Bestellung 61744 Stücke: Lieferzeit 10-14 Tag (e) |
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BAT1503WE6327HTSA1 | Infineon Technologies |
Description: DIODE SCHOTTKY 4V 100MW SOD323Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Diode Type: Schottky - Single Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz Voltage - Peak Reverse (Max): 4V Supplier Device Package: PG-SOD323-3D Part Status: Active Current - Max: 110 mA Power Dissipation (Max): 100 mW |
auf Bestellung 59581 Stücke: Lieferzeit 10-14 Tag (e) |
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BAT165E6327HTSA1 | Infineon Technologies |
Description: DIODE SCHOT 40V 750MA PGSOD3233DPackaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 12pF @ 10V, 1MHz Current - Average Rectified (Io): 750mA Supplier Device Package: PG-SOD323-3D Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 740 mV @ 750 mA Current - Reverse Leakage @ Vr: 50 µA @ 40 V |
Produkt ist nicht verfügbar |
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BAT17E6327HTSA1 | Infineon Technologies |
Description: DIODE SCHOTTKY 4V 150MW SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Diode Type: Schottky - Single Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz Resistance @ If, F: 15Ohm @ 5mA, 10kHz Voltage - Peak Reverse (Max): 4V Supplier Device Package: PG-SOT23 Part Status: Active Current - Max: 130 mA Power Dissipation (Max): 150 mW |
auf Bestellung 22351 Stücke: Lieferzeit 10-14 Tag (e) |
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BAT1704E6327HTSA1 | Infineon Technologies |
Description: DIODE SCHOTTKY 4V 150MW SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Diode Type: Schottky - 1 Pair Series Connection Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz Resistance @ If, F: 15Ohm @ 5mA, 10kHz Voltage - Peak Reverse (Max): 4V Supplier Device Package: PG-SOT23 Part Status: Active Current - Max: 130 mA Power Dissipation (Max): 150 mW |
auf Bestellung 7777 Stücke: Lieferzeit 10-14 Tag (e) |
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BAT60BE6327HTSA1 | Infineon Technologies |
Description: DIODE SCHOTTKY 10V 3A PGSOD3233DPackaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 30pF @ 5V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: PG-SOD323-3D Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 10 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A Current - Reverse Leakage @ Vr: 25 µA @ 8 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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BAT64E6327HTSA1 | Infineon Technologies |
Description: DIODE SCHOTTKY 40V 120MA PGSOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Capacitance @ Vr, F: 6pF @ 1V, 1MHz Current - Average Rectified (Io): 120mA Supplier Device Package: PG-SOT23 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 30 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2788 Stücke: Lieferzeit 10-14 Tag (e) |
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BAT6404E6327HTSA1 | Infineon Technologies |
Description: DIODE ARR SCHOTT 40V 250MA SOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 5 ns Technology: Schottky Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 250mA Supplier Device Package: PG-SOT23 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 30 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 34158 Stücke: Lieferzeit 10-14 Tag (e) |
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BAT6404WH6327XTSA1 | Infineon Technologies |
Description: DIODE ARR SCHOT 40V 250MA SOT323Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 5 ns Technology: Schottky Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 250mA Supplier Device Package: PG-SOT323 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 30 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 40242 Stücke: Lieferzeit 10-14 Tag (e) |
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BAT6405WH6327XTSA1 | Infineon Technologies |
Description: DIODE ARR SCHOT 40V 250MA SOT323Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 5 ns Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 250mA Supplier Device Package: PG-SOT323 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 30 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 19212 Stücke: Lieferzeit 10-14 Tag (e) |
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BAT6406E6327HTSA1 | Infineon Technologies |
Description: DIODE ARR SCHOTT 40V 250MA SOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 5 ns Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 250mA Supplier Device Package: PG-SOT23 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 30 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 66042 Stücke: Lieferzeit 10-14 Tag (e) |
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BAT6406WH6327XTSA1 | Infineon Technologies |
Description: DIODE ARR SCHOT 40V 250MA SOT323Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 5 ns Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 250mA Supplier Device Package: PG-SOT323 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 30 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 5870 Stücke: Lieferzeit 10-14 Tag (e) |
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BAV199E6433HTMA1 | Infineon Technologies |
Description: DIODE ARRAY GP 80V 200MA PGSOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 1.5 µs Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: PG-SOT23 Operating Temperature - Junction: 150°C (Max) Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 5 nA @ 75 V |
auf Bestellung 32165 Stücke: Lieferzeit 10-14 Tag (e) |
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BAV70E6433HTMA1 | Infineon Technologies |
Description: DIODE ARRAY GP 80V 200MA PGSOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: PG-SOT23 Operating Temperature - Junction: 150°C (Max) Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 150 nA @ 70 V |
auf Bestellung 39888 Stücke: Lieferzeit 10-14 Tag (e) |
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BAV99SH6327XTSA1 | Infineon Technologies |
Description: DIODE ARR GP 80V 200MA SOT36363Packaging: Cut Tape (CT) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 2 Pair Series Connection Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: PG-SOT363-6-3 Operating Temperature - Junction: 150°C (Max) Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 150 nA @ 70 V |
auf Bestellung 20398 Stücke: Lieferzeit 10-14 Tag (e) |
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BAW156E6327HTSA1 | Infineon Technologies |
Description: DIODE ARRAY GP 80V 200MA PGSOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 1.5 µs Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: PG-SOT23 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 5 nA @ 75 V |
auf Bestellung 4812 Stücke: Lieferzeit 10-14 Tag (e) |
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BB545E7904HTSA1 | Infineon Technologies |
Description: DIODE VAR CAP 30V 20MA SOD-323Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Diode Type: Single Operating Temperature: -55°C ~ 150°C (TJ) Capacitance @ Vr, F: 2.2pF @ 28V, 1MHz Capacitance Ratio Condition: C1/C28 Supplier Device Package: PG-SOD323-3D Voltage - Peak Reverse (Max): 30 V Capacitance Ratio: 11.0 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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BB639CE7904HTSA1 | Infineon Technologies |
Description: DIODE VAR CAP 30V 20MA SOD-323Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Diode Type: Single Operating Temperature: -55°C ~ 150°C (TJ) Capacitance @ Vr, F: 2.75pF @ 28V, 1MHz Capacitance Ratio Condition: C1/C28 Supplier Device Package: PG-SOD323-3D Voltage - Peak Reverse (Max): 30 V Capacitance Ratio: 15.3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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BB814E6327GR1HTSA1 | Infineon Technologies |
Description: DIODE VAR CAP 18V 50MA SOT-23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Diode Type: 1 Pair Common Cathode Operating Temperature: -55°C ~ 125°C (TJ) Capacitance @ Vr, F: 22.7pF @ 8V, 1MHz Q @ Vr, F: 200 @ 2V, 100MHz Capacitance Ratio Condition: C2/C8 Supplier Device Package: PG-SOT23 Part Status: Active Voltage - Peak Reverse (Max): 18 V Capacitance Ratio: 2.25 |
auf Bestellung 12265 Stücke: Lieferzeit 10-14 Tag (e) |
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BBY5202WH6327XTSA1 | Infineon Technologies |
Description: DIODE TUNING 7V 20MA SCD80Packaging: Cut Tape (CT) Package / Case: SC-80 Mounting Type: Surface Mount Diode Type: Single Operating Temperature: -55°C ~ 150°C (TJ) Capacitance @ Vr, F: 1.45pF @ 4V, 1MHz Capacitance Ratio Condition: C1/C4 Supplier Device Package: SCD-80 Voltage - Peak Reverse (Max): 7 V Capacitance Ratio: 2.1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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BBY5702VH6327XTSA1 | Infineon Technologies |
Description: DIODE VARACTOR 10V SGL PG-SC79-2Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Diode Type: Single Operating Temperature: -55°C ~ 125°C (TJ) Capacitance @ Vr, F: 5.5pF @ 4V, 1MHz Capacitance Ratio Condition: C1/C4 Supplier Device Package: PG-SC79-2 Part Status: Active Voltage - Peak Reverse (Max): 10 V Capacitance Ratio: 4.5 |
auf Bestellung 21224 Stücke: Lieferzeit 10-14 Tag (e) |
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BBY5803WE6327HTSA1 | Infineon Technologies |
Description: DIODE TUNING 10V 20MA SOD-323Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Diode Type: Single Operating Temperature: -55°C ~ 150°C (TJ) Capacitance @ Vr, F: 5.5pF @ 6V, 1MHz Capacitance Ratio Condition: C1/C4 Supplier Device Package: PG-SOD323-3D Part Status: Obsolete Voltage - Peak Reverse (Max): 10 V Capacitance Ratio: 3.5 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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BBY6502VH6327XTSA1 | Infineon Technologies |
Description: DIODE TUNING 15V 50MA SC79Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Diode Type: Single Operating Temperature: -55°C ~ 150°C (TJ) Capacitance @ Vr, F: 2.8pF @ 4.7V, 1MHz Capacitance Ratio Condition: C0.3/C4.7 Supplier Device Package: PG-SC79-2 Part Status: Active Voltage - Peak Reverse (Max): 15 V Capacitance Ratio: 10.9 |
auf Bestellung 13963 Stücke: Lieferzeit 10-14 Tag (e) |
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BBY6602VH6327XTSA1 | Infineon Technologies |
Description: DIODE TUNING 12V 50MA SC79Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Diode Type: Single Operating Temperature: -55°C ~ 150°C (TJ) Capacitance @ Vr, F: 13.5pF @ 4.5V, 1MHz Capacitance Ratio Condition: C1/C4.5 Supplier Device Package: PG-SC79-2 Voltage - Peak Reverse (Max): 12 V Capacitance Ratio: 5.41 |
auf Bestellung 15083 Stücke: Lieferzeit 10-14 Tag (e) |
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BC807UE6327HTSA1 | Infineon Technologies |
Description: TRANS 2PNP 45V 500MA PG-SC74-6Packaging: Cut Tape (CT) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: 150°C (TJ) Power - Max: 330mW Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 200MHz Supplier Device Package: PG-SC74-6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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BC817K16E6327HTSA1 | Infineon Technologies |
Description: TRANS NPN 45V 0.5A SOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 170MHz Supplier Device Package: PG-SOT23 Part Status: Last Time Buy Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 500 mW |
auf Bestellung 84522 Stücke: Lieferzeit 10-14 Tag (e) |
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BC817K40E6327HTSA1 | Infineon Technologies |
Description: TRANS NPN 45V 0.5A SOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Frequency - Transition: 170MHz Supplier Device Package: PG-SOT23 Part Status: Last Time Buy Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 500 mW |
auf Bestellung 78630 Stücke: Lieferzeit 10-14 Tag (e) |
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| FM22L16-55-TG |
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Hersteller: Infineon Technologies
Description: IC FRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Memory Format: FRAM
Supplier Device Package: 44-TSOP II
Part Status: Active
Write Cycle Time - Word, Page: 110ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Description: IC FRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Memory Format: FRAM
Supplier Device Package: 44-TSOP II
Part Status: Active
Write Cycle Time - Word, Page: 110ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
auf Bestellung 366 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 61.79 EUR |
| 10+ | 57.12 EUR |
| 25+ | 55.28 EUR |
| 50+ | 53.91 EUR |
| 135+ | 51.97 EUR |
| 270+ | 50.65 EUR |
| FM24C16B-G |
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Hersteller: Infineon Technologies
Description: IC FRAM 16KBIT I2C 1MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 1 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Part Status: Active
Memory Interface: I2C
Access Time: 550 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
Description: IC FRAM 16KBIT I2C 1MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 1 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Part Status: Active
Memory Interface: I2C
Access Time: 550 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
auf Bestellung 1430 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 2.9 EUR |
| 10+ | 2.71 EUR |
| 25+ | 2.64 EUR |
| 97+ | 2.52 EUR |
| 194+ | 2.46 EUR |
| 291+ | 2.43 EUR |
| 582+ | 2.37 EUR |
| 1067+ | 2.32 EUR |
| FM24CL04B-G |
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Hersteller: Infineon Technologies
Description: IC FRAM 4KBIT I2C 1MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 1 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Part Status: Active
Memory Interface: I2C
Access Time: 550 ns
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
Description: IC FRAM 4KBIT I2C 1MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 1 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Part Status: Active
Memory Interface: I2C
Access Time: 550 ns
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
auf Bestellung 1678 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 2.62 EUR |
| 10+ | 2.45 EUR |
| 25+ | 2.38 EUR |
| 97+ | 2.28 EUR |
| 194+ | 2.23 EUR |
| 291+ | 2.2 EUR |
| 582+ | 2.14 EUR |
| 1067+ | 2.1 EUR |
| FM24CL16B-DG |
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Hersteller: Infineon Technologies
Description: IC FRAM 16KBIT I2C 1MHZ 8DFN
Packaging: Tube
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 1 MHz
Memory Format: FRAM
Supplier Device Package: 8-DFN (4x4.5)
Part Status: Active
Memory Interface: I2C
Access Time: 550 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
Description: IC FRAM 16KBIT I2C 1MHZ 8DFN
Packaging: Tube
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 1 MHz
Memory Format: FRAM
Supplier Device Package: 8-DFN (4x4.5)
Part Status: Active
Memory Interface: I2C
Access Time: 550 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
auf Bestellung 1286 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 3.41 EUR |
| 10+ | 3.19 EUR |
| 25+ | 3.1 EUR |
| 81+ | 2.98 EUR |
| 162+ | 2.91 EUR |
| 324+ | 2.84 EUR |
| 567+ | 2.79 EUR |
| 1053+ | 2.73 EUR |
| FM24CL64B-DG |
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Hersteller: Infineon Technologies
Description: IC FRAM 64KBIT I2C 1MHZ 8DFN
Packaging: Tube
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 1 MHz
Memory Format: FRAM
Supplier Device Package: 8-DFN (4x4.5)
Part Status: Active
Memory Interface: I2C
Access Time: 550 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
Description: IC FRAM 64KBIT I2C 1MHZ 8DFN
Packaging: Tube
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 1 MHz
Memory Format: FRAM
Supplier Device Package: 8-DFN (4x4.5)
Part Status: Active
Memory Interface: I2C
Access Time: 550 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
auf Bestellung 1243 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 5.51 EUR |
| 10+ | 5.13 EUR |
| 25+ | 4.98 EUR |
| 81+ | 4.79 EUR |
| 162+ | 4.68 EUR |
| 324+ | 4.56 EUR |
| 567+ | 4.47 EUR |
| 1053+ | 4.37 EUR |
| FM25CL64B-DG |
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Hersteller: Infineon Technologies
Description: IC FRAM 64KBIT SPI 20MHZ 8DFN
Packaging: Tube
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 20 MHz
Memory Format: FRAM
Supplier Device Package: 8-DFN (4x4.5)
Part Status: Active
Memory Interface: SPI
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
Description: IC FRAM 64KBIT SPI 20MHZ 8DFN
Packaging: Tube
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 20 MHz
Memory Format: FRAM
Supplier Device Package: 8-DFN (4x4.5)
Part Status: Active
Memory Interface: SPI
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
auf Bestellung 8131 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 4 EUR |
| 10+ | 3.74 EUR |
| 25+ | 3.63 EUR |
| 81+ | 3.49 EUR |
| 162+ | 3.41 EUR |
| 324+ | 3.32 EUR |
| 567+ | 3.26 EUR |
| 1053+ | 3.19 EUR |
| 5022+ | 3.01 EUR |
| FM25H20-DG | ![]() |
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Hersteller: Infineon Technologies
Description: IC FRAM 2MBIT SPI 40MHZ 8DFN
Packaging: Tube
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 40 MHz
Memory Format: FRAM
Supplier Device Package: 8-DFN (5x6)
Memory Interface: SPI
Memory Organization: 256K x 8
DigiKey Programmable: Not Verified
Description: IC FRAM 2MBIT SPI 40MHZ 8DFN
Packaging: Tube
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 40 MHz
Memory Format: FRAM
Supplier Device Package: 8-DFN (5x6)
Memory Interface: SPI
Memory Organization: 256K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FM25L04B-DG |
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Hersteller: Infineon Technologies
Description: IC FRAM 4KBIT SPI 20MHZ 8DFN
Packaging: Tube
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 20 MHz
Memory Format: FRAM
Supplier Device Package: 8-DFN (4x4.5)
Part Status: Active
Memory Interface: SPI
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
Description: IC FRAM 4KBIT SPI 20MHZ 8DFN
Packaging: Tube
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 20 MHz
Memory Format: FRAM
Supplier Device Package: 8-DFN (4x4.5)
Part Status: Active
Memory Interface: SPI
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FM25L16B-DG |
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Hersteller: Infineon Technologies
Description: IC FRAM 16KBIT SPI 20MHZ 8DFN
Packaging: Tube
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 20 MHz
Memory Format: FRAM
Supplier Device Package: 8-DFN (4x4.5)
Part Status: Active
Memory Interface: SPI
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
Description: IC FRAM 16KBIT SPI 20MHZ 8DFN
Packaging: Tube
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 20 MHz
Memory Format: FRAM
Supplier Device Package: 8-DFN (4x4.5)
Part Status: Active
Memory Interface: SPI
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
auf Bestellung 92 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 2.94 EUR |
| 10+ | 2.75 EUR |
| 25+ | 2.67 EUR |
| 81+ | 2.57 EUR |
| FM25L16B-G |
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Hersteller: Infineon Technologies
Description: IC FRAM 16KBIT SPI 20MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 20 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Part Status: Active
Memory Interface: SPI
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
Description: IC FRAM 16KBIT SPI 20MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 20 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Part Status: Active
Memory Interface: SPI
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
auf Bestellung 1095 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 2.34 EUR |
| 10+ | 2.19 EUR |
| 25+ | 2.13 EUR |
| 97+ | 2.04 EUR |
| 194+ | 1.99 EUR |
| 291+ | 1.96 EUR |
| 582+ | 1.92 EUR |
| 1067+ | 1.87 EUR |
| FM25V02-DG |
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Hersteller: Infineon Technologies
Description: IC FRAM 256KBIT SPI 40MHZ 8DFN
Packaging: Tube
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 40 MHz
Memory Format: FRAM
Supplier Device Package: 8-DFN (4x4.5)
Part Status: Obsolete
Memory Interface: SPI
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Description: IC FRAM 256KBIT SPI 40MHZ 8DFN
Packaging: Tube
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 40 MHz
Memory Format: FRAM
Supplier Device Package: 8-DFN (4x4.5)
Part Status: Obsolete
Memory Interface: SPI
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FM25V20-DG |
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Hersteller: Infineon Technologies
Description: IC FRAM 2MBIT SPI 40MHZ 8DFN
Packaging: Tube
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 40 MHz
Memory Format: FRAM
Supplier Device Package: 8-DFN (5x6)
Part Status: Obsolete
Memory Interface: SPI
Memory Organization: 256K x 8
DigiKey Programmable: Not Verified
Description: IC FRAM 2MBIT SPI 40MHZ 8DFN
Packaging: Tube
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 40 MHz
Memory Format: FRAM
Supplier Device Package: 8-DFN (5x6)
Part Status: Obsolete
Memory Interface: SPI
Memory Organization: 256K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BA595E6327HTSA1 |
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Hersteller: Infineon Technologies
Description: RF DIODE PIN 50V SOD323-2
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 10V, 1MHz
Resistance @ If, F: 7Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOD323-2
Part Status: Obsolete
Current - Max: 50 mA
Description: RF DIODE PIN 50V SOD323-2
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 10V, 1MHz
Resistance @ If, F: 7Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOD323-2
Part Status: Obsolete
Current - Max: 50 mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BA89202VH6127XTSA1 |
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Hersteller: Infineon Technologies
Description: RF DIODE STANDARD 35V SC79-2
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Diode Type: Standard - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
Resistance @ If, F: 500mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: PG-SC79-2
Part Status: Not For New Designs
Current - Max: 100 mA
Description: RF DIODE STANDARD 35V SC79-2
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Diode Type: Standard - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
Resistance @ If, F: 500mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: PG-SC79-2
Part Status: Not For New Designs
Current - Max: 100 mA
auf Bestellung 71831 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 72+ | 0.25 EUR |
| 108+ | 0.16 EUR |
| 122+ | 0.15 EUR |
| 144+ | 0.12 EUR |
| 250+ | 0.11 EUR |
| 1000+ | 0.1 EUR |
| 2500+ | 0.095 EUR |
| BAL74E6327HTSA1 |
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Hersteller: Infineon Technologies
Description: DIODE STANDARD 50V 250MA PGSOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Description: DIODE STANDARD 50V 250MA PGSOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BAL99E6327HTSA1 |
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Hersteller: Infineon Technologies
Description: DIODE STANDARD 80V 250MA PGSOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 70 V
Description: DIODE STANDARD 80V 250MA PGSOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 70 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BAR6302VH6327XTSA1 |
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Hersteller: Infineon Technologies
Description: RF DIODE PIN 50V 250MW PG-SC79-2
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SC79-2
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
Description: RF DIODE PIN 50V 250MW PG-SC79-2
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SC79-2
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
auf Bestellung 238 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 100+ | 0.18 EUR |
| 137+ | 0.13 EUR |
| 159+ | 0.11 EUR |
| 188+ | 0.094 EUR |
| BAR6304E6327HTSA1 |
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Hersteller: Infineon Technologies
Description: RF DIODE PIN 50V 250MW PG-SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
Description: RF DIODE PIN 50V 250MW PG-SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
auf Bestellung 11280 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 42+ | 0.42 EUR |
| 61+ | 0.29 EUR |
| 68+ | 0.26 EUR |
| 100+ | 0.22 EUR |
| 250+ | 0.2 EUR |
| 500+ | 0.19 EUR |
| BAR6404E6327HTSA1 |
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Hersteller: Infineon Technologies
Description: RF DIODE PIN 150V 250MW PG-SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
Description: RF DIODE PIN 150V 250MW PG-SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
auf Bestellung 3261 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 91+ | 0.19 EUR |
| 130+ | 0.14 EUR |
| 149+ | 0.12 EUR |
| 176+ | 0.1 EUR |
| 250+ | 0.091 EUR |
| 500+ | 0.086 EUR |
| 1000+ | 0.082 EUR |
| BAR6405E6327HTSA1 |
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Hersteller: Infineon Technologies
Description: RF DIODE PIN 150V 250MW PG-SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
Description: RF DIODE PIN 150V 250MW PG-SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
auf Bestellung 11703 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 91+ | 0.19 EUR |
| 130+ | 0.14 EUR |
| 149+ | 0.12 EUR |
| 176+ | 0.1 EUR |
| 250+ | 0.091 EUR |
| 500+ | 0.086 EUR |
| 1000+ | 0.082 EUR |
| BAR9002LRHE6327XTSA1 |
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Hersteller: Infineon Technologies
Description: RF DIODE PIN 80V 250MW TSLP-2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 1V, 1MHz
Resistance @ If, F: 800mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 80V
Supplier Device Package: PG-TSLP-2-7
Part Status: Obsolete
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
Description: RF DIODE PIN 80V 250MW TSLP-2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 1V, 1MHz
Resistance @ If, F: 800mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 80V
Supplier Device Package: PG-TSLP-2-7
Part Status: Obsolete
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BAS116E6327HTSA1 |
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Hersteller: Infineon Technologies
Description: DIODE STANDARD 80V 250MA PGSOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Description: DIODE STANDARD 80V 250MA PGSOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
auf Bestellung 125848 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 56+ | 0.32 EUR |
| 90+ | 0.2 EUR |
| 135+ | 0.13 EUR |
| 500+ | 0.096 EUR |
| 1000+ | 0.084 EUR |
| BAS140WE6327HTSA1 |
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Hersteller: Infineon Technologies
Description: DIODE SCHOT 40V 120MA PGSOD3233D
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 120mA
Supplier Device Package: PG-SOD323-3D
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Description: DIODE SCHOT 40V 120MA PGSOD3233D
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 120mA
Supplier Device Package: PG-SOD323-3D
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BAS1602WH6327XTSA1 |
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Hersteller: Infineon Technologies
Description: DIODE GEN PURP 80V 200MA SCD80-2
Description: DIODE GEN PURP 80V 200MA SCD80-2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BAS1603WE6327HTSA1 |
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Hersteller: Infineon Technologies
Description: DIODE STD 80V 250MA PGSOD3233D
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: PG-SOD323-3D
Operating Temperature - Junction: 150°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Description: DIODE STD 80V 250MA PGSOD3233D
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: PG-SOD323-3D
Operating Temperature - Junction: 150°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BAS16SH6327XTSA1 |
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Hersteller: Infineon Technologies
Description: DIODE ARR GP 80V 200MA SOT363-PO
Packaging: Cut Tape (CT)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT363-PO
Operating Temperature - Junction: 150°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Description: DIODE ARR GP 80V 200MA SOT363-PO
Packaging: Cut Tape (CT)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT363-PO
Operating Temperature - Junction: 150°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
auf Bestellung 53025 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 34+ | 0.53 EUR |
| 57+ | 0.31 EUR |
| 100+ | 0.21 EUR |
| 500+ | 0.19 EUR |
| 1000+ | 0.18 EUR |
| BAS170WE6327HTSA1 |
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Hersteller: Infineon Technologies
Description: DIODE SCHOTT 70V 70MA PGSOD3233D
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: PG-SOD323-3D
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTT 70V 70MA PGSOD3233D
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: PG-SOD323-3D
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 35247 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 33+ | 0.55 EUR |
| 60+ | 0.3 EUR |
| 100+ | 0.23 EUR |
| 500+ | 0.17 EUR |
| 1000+ | 0.15 EUR |
| BAS28E6327HTSA1 |
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Hersteller: Infineon Technologies
Description: DIODE ARR GP 80V 200MA SOT1433D
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT-143-3D
Operating Temperature - Junction: 150°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 100 nA @ 75 V
Description: DIODE ARR GP 80V 200MA SOT1433D
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT-143-3D
Operating Temperature - Junction: 150°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 100 nA @ 75 V
auf Bestellung 702 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 48+ | 0.37 EUR |
| 70+ | 0.25 EUR |
| 100+ | 0.22 EUR |
| 500+ | 0.16 EUR |
| BAS3010S02LRHE6327XTSA1 |
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Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 30V 1A PGTSLP217
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 15pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: PG-TSLP-2-17
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 1 A
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
Description: DIODE SCHOTTKY 30V 1A PGTSLP217
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 15pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: PG-TSLP-2-17
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 1 A
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
auf Bestellung 23204 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 24+ | 0.74 EUR |
| 35+ | 0.52 EUR |
| 100+ | 0.4 EUR |
| 500+ | 0.3 EUR |
| 1000+ | 0.26 EUR |
| 2000+ | 0.24 EUR |
| 5000+ | 0.22 EUR |
| BAS4007E6327HTSA1 |
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Hersteller: Infineon Technologies
Description: DIODE ARR SCHOTT 40V SOT-143-3D
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT-143-3D
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Description: DIODE ARR SCHOTT 40V SOT-143-3D
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT-143-3D
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
auf Bestellung 2755 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 63+ | 0.28 EUR |
| 92+ | 0.19 EUR |
| BAS5202VH6327XTSA1 |
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Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 45V 750MA PGSC792
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 750mA
Supplier Device Package: PG-SC79-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 45 V
Description: DIODE SCHOTTKY 45V 750MA PGSC792
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 750mA
Supplier Device Package: PG-SC79-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 45 V
auf Bestellung 238 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 29+ | 0.62 EUR |
| 60+ | 0.3 EUR |
| 100+ | 0.29 EUR |
| BAS7002WH6327XTSA1 |
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Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 70V 70MA SCD80-2
Description: DIODE SCHOTTKY 70V 70MA SCD80-2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BAS7007E6327HTSA1 |
![]() |
Hersteller: Infineon Technologies
Description: DIODE ARR SCHOTT 70V SOT-143-3D
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT-143-3D
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Description: DIODE ARR SCHOTT 70V SOT-143-3D
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT-143-3D
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
auf Bestellung 16259 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 44+ | 0.4 EUR |
| 82+ | 0.22 EUR |
| 100+ | 0.19 EUR |
| 500+ | 0.17 EUR |
| BAS7007WH6327XTSA1 |
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Hersteller: Infineon Technologies
Description: DIODE ARR SCHOTT 70V SOT343-4-1
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT343-4-1
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Description: DIODE ARR SCHOTT 70V SOT343-4-1
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT343-4-1
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
auf Bestellung 61744 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 77+ | 0.23 EUR |
| 115+ | 0.15 EUR |
| BAT1503WE6327HTSA1 |
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Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 4V 100MW SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOD323-3D
Part Status: Active
Current - Max: 110 mA
Power Dissipation (Max): 100 mW
Description: DIODE SCHOTTKY 4V 100MW SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOD323-3D
Part Status: Active
Current - Max: 110 mA
Power Dissipation (Max): 100 mW
auf Bestellung 59581 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 1.2 EUR |
| 24+ | 0.74 EUR |
| 100+ | 0.48 EUR |
| 500+ | 0.37 EUR |
| 1000+ | 0.33 EUR |
| BAT165E6327HTSA1 |
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Hersteller: Infineon Technologies
Description: DIODE SCHOT 40V 750MA PGSOD3233D
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 12pF @ 10V, 1MHz
Current - Average Rectified (Io): 750mA
Supplier Device Package: PG-SOD323-3D
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 750 mA
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
Description: DIODE SCHOT 40V 750MA PGSOD3233D
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 12pF @ 10V, 1MHz
Current - Average Rectified (Io): 750mA
Supplier Device Package: PG-SOD323-3D
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 750 mA
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BAT17E6327HTSA1 |
![]() |
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 4V 150MW SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
Description: DIODE SCHOTTKY 4V 150MW SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
auf Bestellung 22351 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 91+ | 0.19 EUR |
| 137+ | 0.13 EUR |
| 155+ | 0.11 EUR |
| 184+ | 0.096 EUR |
| 250+ | 0.087 EUR |
| 500+ | 0.082 EUR |
| 1000+ | 0.078 EUR |
| BAT1704E6327HTSA1 |
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Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 4V 150MW SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
Description: DIODE SCHOTTKY 4V 150MW SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
auf Bestellung 7777 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 56+ | 0.32 EUR |
| 83+ | 0.21 EUR |
| 94+ | 0.19 EUR |
| 111+ | 0.16 EUR |
| 250+ | 0.15 EUR |
| 500+ | 0.14 EUR |
| 1000+ | 0.13 EUR |
| BAT60BE6327HTSA1 |
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Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 10V 3A PGSOD3233D
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 30pF @ 5V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PG-SOD323-3D
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 25 µA @ 8 V
Description: DIODE SCHOTTKY 10V 3A PGSOD3233D
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 30pF @ 5V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PG-SOD323-3D
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 25 µA @ 8 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BAT64E6327HTSA1 |
![]() |
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 40V 120MA PGSOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 1V, 1MHz
Current - Average Rectified (Io): 120mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 120MA PGSOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 1V, 1MHz
Current - Average Rectified (Io): 120mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2788 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 40+ | 0.44 EUR |
| 82+ | 0.22 EUR |
| 107+ | 0.17 EUR |
| 500+ | 0.12 EUR |
| 1000+ | 0.11 EUR |
| BAT6404E6327HTSA1 |
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Hersteller: Infineon Technologies
Description: DIODE ARR SCHOTT 40V 250MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 250mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARR SCHOTT 40V 250MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 250mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 34158 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 112+ | 0.16 EUR |
| 159+ | 0.11 EUR |
| 189+ | 0.093 EUR |
| 500+ | 0.089 EUR |
| BAT6404WH6327XTSA1 |
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Hersteller: Infineon Technologies
Description: DIODE ARR SCHOT 40V 250MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 250mA
Supplier Device Package: PG-SOT323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARR SCHOT 40V 250MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 250mA
Supplier Device Package: PG-SOT323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 40242 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 53+ | 0.33 EUR |
| 96+ | 0.18 EUR |
| 128+ | 0.14 EUR |
| 500+ | 0.12 EUR |
| BAT6405WH6327XTSA1 |
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Hersteller: Infineon Technologies
Description: DIODE ARR SCHOT 40V 250MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250mA
Supplier Device Package: PG-SOT323
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARR SCHOT 40V 250MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250mA
Supplier Device Package: PG-SOT323
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 19212 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 63+ | 0.28 EUR |
| 113+ | 0.16 EUR |
| 128+ | 0.14 EUR |
| 500+ | 0.12 EUR |
| BAT6406E6327HTSA1 |
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Hersteller: Infineon Technologies
Description: DIODE ARR SCHOTT 40V 250MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARR SCHOTT 40V 250MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 66042 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 50+ | 0.35 EUR |
| 76+ | 0.23 EUR |
| 126+ | 0.14 EUR |
| 500+ | 0.12 EUR |
| 1000+ | 0.11 EUR |
| BAT6406WH6327XTSA1 |
![]() |
Hersteller: Infineon Technologies
Description: DIODE ARR SCHOT 40V 250MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250mA
Supplier Device Package: PG-SOT323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARR SCHOT 40V 250MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250mA
Supplier Device Package: PG-SOT323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5870 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 72+ | 0.25 EUR |
| 118+ | 0.15 EUR |
| 129+ | 0.14 EUR |
| 500+ | 0.12 EUR |
| BAV199E6433HTMA1 |
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Hersteller: Infineon Technologies
Description: DIODE ARRAY GP 80V 200MA PGSOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Description: DIODE ARRAY GP 80V 200MA PGSOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
auf Bestellung 32165 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 112+ | 0.16 EUR |
| 186+ | 0.095 EUR |
| 216+ | 0.082 EUR |
| 257+ | 0.069 EUR |
| 283+ | 0.062 EUR |
| 500+ | 0.058 EUR |
| 1000+ | 0.055 EUR |
| 2500+ | 0.052 EUR |
| 5000+ | 0.05 EUR |
| BAV70E6433HTMA1 |
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Hersteller: Infineon Technologies
Description: DIODE ARRAY GP 80V 200MA PGSOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 150 nA @ 70 V
Description: DIODE ARRAY GP 80V 200MA PGSOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 150 nA @ 70 V
auf Bestellung 39888 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 84+ | 0.21 EUR |
| 125+ | 0.14 EUR |
| 144+ | 0.12 EUR |
| 500+ | 0.09 EUR |
| 1000+ | 0.074 EUR |
| 2000+ | 0.07 EUR |
| 5000+ | 0.06 EUR |
| BAV99SH6327XTSA1 |
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Hersteller: Infineon Technologies
Description: DIODE ARR GP 80V 200MA SOT36363
Packaging: Cut Tape (CT)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT363-6-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 150 nA @ 70 V
Description: DIODE ARR GP 80V 200MA SOT36363
Packaging: Cut Tape (CT)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT363-6-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 150 nA @ 70 V
auf Bestellung 20398 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 67+ | 0.26 EUR |
| 91+ | 0.2 EUR |
| 100+ | 0.19 EUR |
| 500+ | 0.16 EUR |
| 1000+ | 0.15 EUR |
| BAW156E6327HTSA1 |
![]() |
Hersteller: Infineon Technologies
Description: DIODE ARRAY GP 80V 200MA PGSOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Description: DIODE ARRAY GP 80V 200MA PGSOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
auf Bestellung 4812 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 40+ | 0.44 EUR |
| 66+ | 0.27 EUR |
| 106+ | 0.17 EUR |
| 500+ | 0.12 EUR |
| 1000+ | 0.11 EUR |
| BB545E7904HTSA1 |
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Hersteller: Infineon Technologies
Description: DIODE VAR CAP 30V 20MA SOD-323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.2pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SOD323-3D
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 11.0
Description: DIODE VAR CAP 30V 20MA SOD-323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.2pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SOD323-3D
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 11.0
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BB639CE7904HTSA1 |
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Hersteller: Infineon Technologies
Description: DIODE VAR CAP 30V 20MA SOD-323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.75pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SOD323-3D
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 15.3
Description: DIODE VAR CAP 30V 20MA SOD-323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.75pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SOD323-3D
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 15.3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BB814E6327GR1HTSA1 |
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Hersteller: Infineon Technologies
Description: DIODE VAR CAP 18V 50MA SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: 1 Pair Common Cathode
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 22.7pF @ 8V, 1MHz
Q @ Vr, F: 200 @ 2V, 100MHz
Capacitance Ratio Condition: C2/C8
Supplier Device Package: PG-SOT23
Part Status: Active
Voltage - Peak Reverse (Max): 18 V
Capacitance Ratio: 2.25
Description: DIODE VAR CAP 18V 50MA SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: 1 Pair Common Cathode
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 22.7pF @ 8V, 1MHz
Q @ Vr, F: 200 @ 2V, 100MHz
Capacitance Ratio Condition: C2/C8
Supplier Device Package: PG-SOT23
Part Status: Active
Voltage - Peak Reverse (Max): 18 V
Capacitance Ratio: 2.25
auf Bestellung 12265 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 40+ | 0.44 EUR |
| 65+ | 0.27 EUR |
| 100+ | 0.24 EUR |
| 500+ | 0.22 EUR |
| 1000+ | 0.21 EUR |
| BBY5202WH6327XTSA1 |
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Hersteller: Infineon Technologies
Description: DIODE TUNING 7V 20MA SCD80
Packaging: Cut Tape (CT)
Package / Case: SC-80
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 1.45pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C4
Supplier Device Package: SCD-80
Voltage - Peak Reverse (Max): 7 V
Capacitance Ratio: 2.1
Description: DIODE TUNING 7V 20MA SCD80
Packaging: Cut Tape (CT)
Package / Case: SC-80
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 1.45pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C4
Supplier Device Package: SCD-80
Voltage - Peak Reverse (Max): 7 V
Capacitance Ratio: 2.1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BBY5702VH6327XTSA1 |
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Hersteller: Infineon Technologies
Description: DIODE VARACTOR 10V SGL PG-SC79-2
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 5.5pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C4
Supplier Device Package: PG-SC79-2
Part Status: Active
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 4.5
Description: DIODE VARACTOR 10V SGL PG-SC79-2
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 5.5pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C4
Supplier Device Package: PG-SC79-2
Part Status: Active
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 4.5
auf Bestellung 21224 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 38+ | 0.48 EUR |
| 54+ | 0.33 EUR |
| 500+ | 0.32 EUR |
| BBY5803WE6327HTSA1 |
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Hersteller: Infineon Technologies
Description: DIODE TUNING 10V 20MA SOD-323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 5.5pF @ 6V, 1MHz
Capacitance Ratio Condition: C1/C4
Supplier Device Package: PG-SOD323-3D
Part Status: Obsolete
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 3.5
Description: DIODE TUNING 10V 20MA SOD-323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 5.5pF @ 6V, 1MHz
Capacitance Ratio Condition: C1/C4
Supplier Device Package: PG-SOD323-3D
Part Status: Obsolete
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 3.5
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BBY6502VH6327XTSA1 |
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Hersteller: Infineon Technologies
Description: DIODE TUNING 15V 50MA SC79
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.8pF @ 4.7V, 1MHz
Capacitance Ratio Condition: C0.3/C4.7
Supplier Device Package: PG-SC79-2
Part Status: Active
Voltage - Peak Reverse (Max): 15 V
Capacitance Ratio: 10.9
Description: DIODE TUNING 15V 50MA SC79
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.8pF @ 4.7V, 1MHz
Capacitance Ratio Condition: C0.3/C4.7
Supplier Device Package: PG-SC79-2
Part Status: Active
Voltage - Peak Reverse (Max): 15 V
Capacitance Ratio: 10.9
auf Bestellung 13963 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 27+ | 0.67 EUR |
| 37+ | 0.48 EUR |
| 100+ | 0.44 EUR |
| 500+ | 0.35 EUR |
| 1000+ | 0.3 EUR |
| BBY6602VH6327XTSA1 |
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Hersteller: Infineon Technologies
Description: DIODE TUNING 12V 50MA SC79
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 13.5pF @ 4.5V, 1MHz
Capacitance Ratio Condition: C1/C4.5
Supplier Device Package: PG-SC79-2
Voltage - Peak Reverse (Max): 12 V
Capacitance Ratio: 5.41
Description: DIODE TUNING 12V 50MA SC79
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 13.5pF @ 4.5V, 1MHz
Capacitance Ratio Condition: C1/C4.5
Supplier Device Package: PG-SC79-2
Voltage - Peak Reverse (Max): 12 V
Capacitance Ratio: 5.41
auf Bestellung 15083 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 26+ | 0.69 EUR |
| 38+ | 0.48 EUR |
| 100+ | 0.41 EUR |
| 500+ | 0.33 EUR |
| 1000+ | 0.3 EUR |
| BC807UE6327HTSA1 |
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Hersteller: Infineon Technologies
Description: TRANS 2PNP 45V 500MA PG-SC74-6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 330mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SC74-6
Description: TRANS 2PNP 45V 500MA PG-SC74-6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 330mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SC74-6
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BC817K16E6327HTSA1 |
![]() |
Hersteller: Infineon Technologies
Description: TRANS NPN 45V 0.5A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
Description: TRANS NPN 45V 0.5A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
auf Bestellung 84522 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 28+ | 0.63 EUR |
| 34+ | 0.52 EUR |
| 100+ | 0.28 EUR |
| 500+ | 0.18 EUR |
| 1000+ | 0.12 EUR |
| BC817K40E6327HTSA1 |
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Hersteller: Infineon Technologies
Description: TRANS NPN 45V 0.5A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
Description: TRANS NPN 45V 0.5A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
auf Bestellung 78630 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 31+ | 0.58 EUR |
| 44+ | 0.4 EUR |
| 100+ | 0.2 EUR |
| 500+ | 0.16 EUR |
| 1000+ | 0.11 EUR |






















