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TCA505BGGEGXUMA1 TCA505BGGEGXUMA1 Infineon Technologies TCA505BG.pdf Description: IC SWITCH PROXIMITY INDCT 16DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Analog
Mounting Type: Surface Mount
Type: Proximity Detector
Operating Temperature: -40°C ~ 110°C
Input Type: Analog
Supplier Device Package: PG-DSO-16-1
Part Status: Obsolete
Current - Supply: 550 µA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BTS121AE3045ANTMA1 BTS121AE3045ANTMA1 Infineon Technologies BTS121A.pdf Description: MOSFET N CH 100V 22A TO-220AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 9.5A, 4.5V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: PG-TO220-3-5
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Produkt ist nicht verfügbar
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SLB 9635 TT1.2 FW3.17 SLB 9635 TT1.2 FW3.17 Infineon Technologies Description: IC SPECIALIZED
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SLB 9635 TT1.2 FW3.17 SLB 9635 TT1.2 FW3.17 Infineon Technologies Description: IC SPECIALIZED
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MMBTA 06 LT1 MMBTA 06 LT1 Infineon Technologies smbta06_mmbta06.pdf?folderId=db3a304314dca389011545f4eb561884&fileId=db3a304314dca3890115478ecca71a2d Description: TRANS NPN 80V 500MA SOT23
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MMBTA 06 LT1 MMBTA 06 LT1 Infineon Technologies smbta06_mmbta06.pdf?folderId=db3a304314dca389011545f4eb561884&fileId=db3a304314dca3890115478ecca71a2d Description: TRANS NPN 80V 500MA SOT23
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TLE7259GNT TLE7259GNT Infineon Technologies fundamentals-of-power-semiconductors Description: IC TRANSCEIVER FULL 1/1 PGDSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 7V ~ 27V
Number of Drivers/Receivers: 1/1
Data Rate: 20kBd
Protocol: LINbus
Supplier Device Package: PG-DSO-8
Receiver Hysteresis: 300 mV
Duplex: Full
Produkt ist nicht verfügbar
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SP370-23-106-0 SP370-23-106-0 Infineon Technologies fundamentals-of-power-semiconductors Description: IC PEPS/TPMS 315/434MZ DSOSP14-6
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.236", 6.05mm Width)
Mounting Type: Surface Mount
Frequency: 315MHz, 434MHz
Type: Passive Entry/Start, TPMS
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.9V ~ 3.6V
Supplier Device Package: P-DSOSP-14-6
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2+16.79 EUR
10+13.11 EUR
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100+11.17 EUR
250+10.69 EUR
500+10.40 EUR
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SLE5542M32XHSA2 Infineon Technologies SLE_5542.pdf Description: IC MEMORY
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SLE5542M32XHSA2 Infineon Technologies SLE_5542.pdf Description: IC MEMORY
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IPD135N03LGATMA1 IPD135N03LGATMA1 Infineon Technologies IPD135N03LG_rev2.1.pdf?folderId=db3a304313b8b5a60113cee8ed2a02db&fileId=db3a304327b897500127b8b9540f0003 Description: MOSFET N-CH 30V 30A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 30A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
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2ED020I12FIXUMA1 2ED020I12FIXUMA1 Infineon Technologies Datasheet_2ED020I12_FI_V1+0.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b40959d401de Description: IC GATE DRVR HALF-BRIDGE DSO18-2
Packaging: Cut Tape (CT)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 14V ~ 18V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: PG-DSO-18-2
Rise / Fall Time (Typ): 20ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 1A, 2A
Part Status: Active
DigiKey Programmable: Not Verified
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100+2.82 EUR
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IPD50P04P4L11ATMA1 IPD50P04P4L11ATMA1 Infineon Technologies Infineon-IPD50P04P4L_11-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304329a0f6ee0129db9d1df05c58&ack=t Description: MOSFET P-CH 40V 50A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 50A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 85µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IR3894MTR1PBF IR3894MTR1PBF Infineon Technologies ir3894m.pdf?fileId=5546d462533600a4015355d5d4d6180f Description: IC REG BUCK ADJ 12A 16PWRQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 12A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 300kHz ~ 1.5MHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: 16-PowerQFN
Synchronous Rectifier: Yes
Voltage - Output (Max): 18.06V
Voltage - Input (Min): 1V
Voltage - Output (Min/Fixed): 0.5V
Part Status: Obsolete
Produkt ist nicht verfügbar
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IR3895MTR1PBF IR3895MTR1PBF Infineon Technologies ir3895m.pdf?fileId=5546d462533600a4015355d5dd261811 Description: IC REG BUCK ADJ 16A 16PQFN
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IR3897MTR1PBF IR3897MTR1PBF Infineon Technologies ir3897m.pdf?fileId=5546d462533600a4015355d5e3731813 Description: IC REG BUCK ADJUSTABLE 4A 16PQFN
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IRDC3894 IRDC3894 Infineon Technologies irdc3894.pdf_fileid=5546d462533600a40153569f79de2c61.pdf Description: BOARD EVAL SUPIRBUCK IR3894
Packaging: Bulk
Voltage - Output: 1.2V
Voltage - Input: 12V
Current - Output: 12A
Frequency - Switching: 600kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: IR3894
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Active
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IRDC3895 IRDC3895 Infineon Technologies ir3895m.pdf?fileId=5546d462533600a4015355d5dd261811 Description: BOARD EVAL SUPIRBUCK IR3895
Packaging: Bulk
Voltage - Output: 1.2V
Voltage - Input: 12V
Current - Output: 16A
Frequency - Switching: 600kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: IR3895
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Obsolete
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IR3895MTR1PBF IR3895MTR1PBF Infineon Technologies ir3895m.pdf?fileId=5546d462533600a4015355d5dd261811 Description: IC REG BUCK ADJ 16A 16PQFN
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IR3897MTR1PBF IR3897MTR1PBF Infineon Technologies ir3897m.pdf?fileId=5546d462533600a4015355d5e3731813 Description: IC REG BUCK ADJUSTABLE 4A 16PQFN
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IRF7342D2TRPBF IRF7342D2TRPBF Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET P-CH 55V 3.4A 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 3.4A, 10V
FET Feature: Schottky Diode (Isolated)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 25 V
Produkt ist nicht verfügbar
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IRLR3110ZTRPBF IRLR3110ZTRPBF Infineon Technologies irlr3110zpbf.pdf?fileId=5546d462533600a40153566cf6e2268a Description: MOSFET N-CH 100V 42A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 38A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 25 V
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IRLR3705ZTRPBF IRLR3705ZTRPBF Infineon Technologies irlr3705zpbf.pdf?fileId=5546d462533600a40153566d2d17269d Description: MOSFET N-CH 55V 42A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 42A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
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500+1.19 EUR
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IRF540NSTRRPBF IRF540NSTRRPBF Infineon Technologies irf540nspbf.pdf?fileId=5546d462533600a4015355e3a72819a3 description Description: MOSFET N-CH 100V 33A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 16A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
Produkt ist nicht verfügbar
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IR25600SPBF IR25600SPBF Infineon Technologies ir25600.pdf?fileId=5546d462533600a4015355c9bcd116e7 Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 15ns, 10ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 2.3A, 3.3A
DigiKey Programmable: Not Verified
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IR25601STRPBF IR25601STRPBF Infineon Technologies Infineon-IR25601S-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a762d794ab8 Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 200ns, 100ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.3V
Current - Peak Output (Source, Sink): 60mA, 130mA
Part Status: Active
DigiKey Programmable: Not Verified
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IR25602STRPBF IR25602STRPBF Infineon Technologies ir25602.pdf Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
Part Status: Active
DigiKey Programmable: Not Verified
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2500+1.03 EUR
5000+1.01 EUR
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IR25603SPBF IR25603SPBF Infineon Technologies ir25603.pdf?fileId=5546d462533600a4015355c9e46716ef Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 15.6V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 45ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 180mA, 260mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IR25604STRPBF IR25604STRPBF Infineon Technologies Infineon-IR25604S-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a88c8814ac5 Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Active
DigiKey Programmable: Not Verified
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2500+1.04 EUR
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IR25606STRPBF IR25606STRPBF Infineon Technologies Infineon-IR25606S-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a88cfb54ac8 Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Active
DigiKey Programmable: Not Verified
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2500+1.00 EUR
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IR25607SPbF IR25607SPbF Infineon Technologies Infineon-IR25607S-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a9172b34acb Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 25ns, 17ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
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3+6.51 EUR
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45+4.09 EUR
135+3.75 EUR
270+3.58 EUR
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IR4301MTRPBF IR4301MTRPBF Infineon Technologies ir4301.pdf?fileId=5546d462533600a4015355d5fc691819 Description: IC AMP CLASS D MONO 160W PQFN22
Features: Depop, Differential Inputs
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerVQFN
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 100°C (TA)
Voltage - Supply: 10V ~ 15V
Max Output Power x Channels @ Load: 160W x 1 @ 4Ohm
Supplier Device Package: 22-PQFN (5x6)
Produkt ist nicht verfügbar
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IR4302MTRPBF IR4302MTRPBF Infineon Technologies ir4302.pdf?fileId=5546d462533600a4015355d602a9181d Description: IC AMP CLASS D STEREO 130W 44QFN
Features: Depop, Differential Inputs
Packaging: Tape & Reel (TR)
Package / Case: 44-PowerVFQFN
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 100°C (TA)
Voltage - Supply: 10V ~ 15V
Max Output Power x Channels @ Load: 130W x 2 @ 4Ohm
Supplier Device Package: 44-PQFN (7x7)
Part Status: Active
Produkt ist nicht verfügbar
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IR25601STRPBF IR25601STRPBF Infineon Technologies Infineon-IR25601S-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a762d794ab8 Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 200ns, 100ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.3V
Current - Peak Output (Source, Sink): 60mA, 130mA
Part Status: Active
DigiKey Programmable: Not Verified
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10+1.78 EUR
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IR25602STRPBF IR25602STRPBF Infineon Technologies ir25602.pdf Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
Part Status: Active
DigiKey Programmable: Not Verified
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IR25604STRPBF IR25604STRPBF Infineon Technologies Infineon-IR25604S-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a88c8814ac5 Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Active
DigiKey Programmable: Not Verified
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12+1.55 EUR
25+1.40 EUR
100+1.24 EUR
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IR25606STRPBF IR25606STRPBF Infineon Technologies Infineon-IR25606S-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a88cfb54ac8 Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Active
DigiKey Programmable: Not Verified
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IR4301MTRPBF IR4301MTRPBF Infineon Technologies ir4301.pdf?fileId=5546d462533600a4015355d5fc691819 Description: IC AMP CLASS D MONO 160W PQFN22
Features: Depop, Differential Inputs
Packaging: Cut Tape (CT)
Package / Case: 22-PowerVQFN
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 100°C (TA)
Voltage - Supply: 10V ~ 15V
Max Output Power x Channels @ Load: 160W x 1 @ 4Ohm
Supplier Device Package: 22-PQFN (5x6)
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IR4302MTRPBF IR4302MTRPBF Infineon Technologies ir4302.pdf?fileId=5546d462533600a4015355d602a9181d Description: IC AMP CLASS D STEREO 130W 44QFN
Features: Depop, Differential Inputs
Packaging: Cut Tape (CT)
Package / Case: 44-PowerVFQFN
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 100°C (TA)
Voltage - Supply: 10V ~ 15V
Max Output Power x Channels @ Load: 130W x 2 @ 4Ohm
Supplier Device Package: 44-PQFN (7x7)
Part Status: Active
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CY8CMBR2110-24LQXI CY8CMBR2110-24LQXI Infineon Technologies Infineon-CY8CMBR2110_CapSense_Express_10-Button_Controller.-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec7e3463fc5&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MBR 10 BUTTON 10 LED 32QFN
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Type: Buttons
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Current - Supply: 3.4mA
Number of Inputs: Up to 10
Supplier Device Package: 32-QFN (5x5)
Proximity Detection: No
LED Driver Channels: Up to 10
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 980 Stücke:
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IKD10N60RFATMA1 IKD10N60RFATMA1 Infineon Technologies DS_IKD10N60RF_2_1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a304335c2937a0135e7ea2d2d7a72 Description: IGBT TRENCH FS 600V 20A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 72 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/168ns
Switching Energy: 190µJ (on), 160µJ (off)
Test Condition: 400V, 10A, 26Ohm, 15V
Gate Charge: 64 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 150 W
auf Bestellung 2480 Stücke:
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100+1.44 EUR
500+1.15 EUR
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IKD10N60RFATMA1 IKD10N60RFATMA1 Infineon Technologies DS_IKD10N60RF_2_1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a304335c2937a0135e7ea2d2d7a72 Description: IGBT TRENCH FS 600V 20A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 72 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/168ns
Switching Energy: 190µJ (on), 160µJ (off)
Test Condition: 400V, 10A, 26Ohm, 15V
Gate Charge: 64 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 150 W
Produkt ist nicht verfügbar
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IPI020N06N IPI020N06N Infineon Technologies IPI020N06N_Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433727a44301372b6b23064900 Description: MOSFET N-CH 60V 29A TO262-3
auf Bestellung 33 Stücke:
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IPI029N06NAKSA1 IPI029N06NAKSA1 Infineon Technologies IPI029N06N_Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433727a44301372bab38f54926 Description: MOSFET N-CH 60V 24A/100A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 75µA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 30 V
auf Bestellung 26 Stücke:
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4+4.42 EUR
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IPP060N06NAKSA1 IPP060N06NAKSA1 Infineon Technologies IPP060N06N_Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433727a44301372c06d9d7498a Description: MOSFET N-CH 60V 17A/45A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 45A, 10V
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 36µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V
Produkt ist nicht verfügbar
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BSC014N04LSATMA1 BSC014N04LSATMA1 Infineon Technologies DS_BSC014N04LS_2_1.PDF?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a3043353fdc16013552e99a8147f1 Description: MOSFET N-CH 40V 32/100A SUPERSO8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SuperSO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V
auf Bestellung 10023 Stücke:
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7+2.69 EUR
10+1.97 EUR
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500+1.26 EUR
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BSZ023N04LSATMA1 BSZ023N04LSATMA1 Infineon Technologies BSZ023N04LS.pdf Description: MOSFET N-CH 40V 22A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 20 V
Produkt ist nicht verfügbar
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IPB010N06NATMA1 IPB010N06NATMA1 Infineon Technologies IPB010N06N_Rev2+0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a3043353fdc1601355341f17a485f Description: MOSFET N-CH 60V 45A/180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 208 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 30 V
auf Bestellung 2601 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.60 EUR
10+8.80 EUR
100+6.72 EUR
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IPB014N06NATMA1 IPB014N06NATMA1 Infineon Technologies IPB014N06N_Rev2+0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a3043353fdc160135534e951e4873 Description: MOSFET N-CH 60V 34A/180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 143µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 30 V
auf Bestellung 3603 Stücke:
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3+7.06 EUR
10+5.11 EUR
100+3.64 EUR
500+3.01 EUR
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IPB026N06N IPB026N06N Infineon Technologies IPB026N06N_Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a3043372d5cc8013754c7b2a74f7c Description: MOSFET N-CH 60V 25A TO263-3
auf Bestellung 1928 Stücke:
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IPB057N06NATMA1 IPB057N06NATMA1 Infineon Technologies IPB057N06N_Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433727a44301372c2ed50b49b3 Description: MOSFET N-CH 60V 17A/45A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 45A, 10V
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 36µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V
auf Bestellung 395 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.64 EUR
10+2.34 EUR
100+1.59 EUR
Mindestbestellmenge: 5
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IPD025N06NATMA1 IPD025N06NATMA1 Infineon Technologies IPD025N06N_Rev2+1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304336415dec0136531648062c76 Description: MOSFET N-CH 60V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 90A, 10V
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 95µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 30 V
auf Bestellung 8694 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.86 EUR
10+3.04 EUR
100+2.39 EUR
500+1.94 EUR
1000+1.79 EUR
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IPD053N06NATMA1 IPD053N06NATMA1 Infineon Technologies IPD053N06N_Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433727a44301372c22c4c3499f Description: MOSFET N-CH 60V 18A/45A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 45A, 10V
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 36µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V
auf Bestellung 6632 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.60 EUR
11+1.76 EUR
100+1.24 EUR
500+1.01 EUR
1000+0.93 EUR
Mindestbestellmenge: 7
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IKD15N60RFATMA1 IKD15N60RFATMA1 Infineon Technologies DS_IKD15N60RF_2_1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a304335c2937a0135e75d857b7a1a Description: IGBT TRENCH FS 600V 30A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/160ns
Switching Energy: 270µJ (on), 250µJ (off)
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 250 W
auf Bestellung 5444 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.19 EUR
10+2.70 EUR
100+1.85 EUR
500+1.49 EUR
1000+1.48 EUR
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IKD15N60RFATMA1 IKD15N60RFATMA1 Infineon Technologies DS_IKD15N60RF_2_1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a304335c2937a0135e75d857b7a1a Description: IGBT TRENCH FS 600V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/160ns
Switching Energy: 270µJ (on), 250µJ (off)
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 250 W
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.21 EUR
Mindestbestellmenge: 2500
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BSC014N06NSATMA1 BSC014N06NSATMA1 Infineon Technologies BSC014N06NS_Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a3043382e837301386ab95a521dcd Description: MOSFET N-CH 60V 30A/100A TDSON7
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.45mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 120µA
Supplier Device Package: PG-TDSON-8-17
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 30 V
auf Bestellung 13970 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.00 EUR
10+3.74 EUR
100+2.62 EUR
500+2.33 EUR
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BSC016N06NSATMA1 BSC016N06NSATMA1 Infineon Technologies BSC016N06NS_rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a3043353fdc160135532b353c483c Description: MOSFET N-CH 60V 30A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 95µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 30 V
auf Bestellung 15979 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.45 EUR
10+3.25 EUR
100+2.29 EUR
500+1.80 EUR
1000+1.60 EUR
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BSC039N06NSATMA1 BSC039N06NSATMA1 Infineon Technologies BSC039N06NS_Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433727a44301372c3adce949c7 Description: MOSFET N-CH 60V 19A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 36µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V
auf Bestellung 12741 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.02 EUR
12+1.55 EUR
100+1.29 EUR
500+1.21 EUR
Mindestbestellmenge: 9
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BSZ042N06NSATMA1 BSZ042N06NSATMA1 Infineon Technologies BSZ042N06NS_Rev2.0.pdf?folderId=db3a30431ddc9372011ebafa04517f8b&fileId=db3a3043345a30bc013465d4bf1862fd Description: MOSFET N-CH 60V 17A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 36µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V
auf Bestellung 12823 Stücke:
Lieferzeit 10-14 Tag (e)
9+1.97 EUR
12+1.51 EUR
100+1.28 EUR
500+1.12 EUR
1000+1.06 EUR
Mindestbestellmenge: 9
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BSC028N06NSATMA1 BSC028N06NSATMA1 Infineon Technologies BSC028N06NS_Rev2.0.pdf?folderId=db3a30431ddc9372011ebafa04517f8b&fileId=db3a3043345a30bc013465d221bd62f9 Description: MOSFET N-CH 60V 23A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 50µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 30 V
auf Bestellung 5823 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.75 EUR
10+2.70 EUR
100+2.06 EUR
500+1.67 EUR
Mindestbestellmenge: 5
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TCA505BGGEGXUMA1 TCA505BG.pdf
TCA505BGGEGXUMA1
Hersteller: Infineon Technologies
Description: IC SWITCH PROXIMITY INDCT 16DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Analog
Mounting Type: Surface Mount
Type: Proximity Detector
Operating Temperature: -40°C ~ 110°C
Input Type: Analog
Supplier Device Package: PG-DSO-16-1
Part Status: Obsolete
Current - Supply: 550 µA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BTS121AE3045ANTMA1 BTS121A.pdf
BTS121AE3045ANTMA1
Hersteller: Infineon Technologies
Description: MOSFET N CH 100V 22A TO-220AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 9.5A, 4.5V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: PG-TO220-3-5
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Produkt ist nicht verfügbar
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SLB 9635 TT1.2 FW3.17
SLB 9635 TT1.2 FW3.17
Hersteller: Infineon Technologies
Description: IC SPECIALIZED
auf Bestellung 11457 Stücke:
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SLB 9635 TT1.2 FW3.17
SLB 9635 TT1.2 FW3.17
Hersteller: Infineon Technologies
Description: IC SPECIALIZED
auf Bestellung 11457 Stücke:
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MMBTA 06 LT1 smbta06_mmbta06.pdf?folderId=db3a304314dca389011545f4eb561884&fileId=db3a304314dca3890115478ecca71a2d
MMBTA 06 LT1
Hersteller: Infineon Technologies
Description: TRANS NPN 80V 500MA SOT23
auf Bestellung 33112 Stücke:
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MMBTA 06 LT1 smbta06_mmbta06.pdf?folderId=db3a304314dca389011545f4eb561884&fileId=db3a304314dca3890115478ecca71a2d
MMBTA 06 LT1
Hersteller: Infineon Technologies
Description: TRANS NPN 80V 500MA SOT23
auf Bestellung 33112 Stücke:
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TLE7259GNT fundamentals-of-power-semiconductors
TLE7259GNT
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER FULL 1/1 PGDSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 7V ~ 27V
Number of Drivers/Receivers: 1/1
Data Rate: 20kBd
Protocol: LINbus
Supplier Device Package: PG-DSO-8
Receiver Hysteresis: 300 mV
Duplex: Full
Produkt ist nicht verfügbar
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SP370-23-106-0 fundamentals-of-power-semiconductors
SP370-23-106-0
Hersteller: Infineon Technologies
Description: IC PEPS/TPMS 315/434MZ DSOSP14-6
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.236", 6.05mm Width)
Mounting Type: Surface Mount
Frequency: 315MHz, 434MHz
Type: Passive Entry/Start, TPMS
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.9V ~ 3.6V
Supplier Device Package: P-DSOSP-14-6
auf Bestellung 1718 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.79 EUR
10+13.11 EUR
25+12.19 EUR
100+11.17 EUR
250+10.69 EUR
500+10.40 EUR
Mindestbestellmenge: 2
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SLE5542M32XHSA2 SLE_5542.pdf
Hersteller: Infineon Technologies
Description: IC MEMORY
auf Bestellung 18390 Stücke:
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SLE5542M32XHSA2 SLE_5542.pdf
Hersteller: Infineon Technologies
Description: IC MEMORY
auf Bestellung 18390 Stücke:
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IPD135N03LGATMA1 IPD135N03LG_rev2.1.pdf?folderId=db3a304313b8b5a60113cee8ed2a02db&fileId=db3a304327b897500127b8b9540f0003
IPD135N03LGATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 30A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 30A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
auf Bestellung 28599 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.90 EUR
25+0.72 EUR
100+0.54 EUR
500+0.48 EUR
1000+0.45 EUR
Mindestbestellmenge: 20
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2ED020I12FIXUMA1 Datasheet_2ED020I12_FI_V1+0.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b40959d401de
2ED020I12FIXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE DSO18-2
Packaging: Cut Tape (CT)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 14V ~ 18V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: PG-DSO-18-2
Rise / Fall Time (Typ): 20ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 1A, 2A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 7843 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.58 EUR
10+3.42 EUR
25+3.13 EUR
100+2.82 EUR
250+2.67 EUR
500+2.57 EUR
Mindestbestellmenge: 4
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IPD50P04P4L11ATMA1 Infineon-IPD50P04P4L_11-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304329a0f6ee0129db9d1df05c58&ack=t
IPD50P04P4L11ATMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 50A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 50A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 85µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
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IR3894MTR1PBF ir3894m.pdf?fileId=5546d462533600a4015355d5d4d6180f
IR3894MTR1PBF
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJ 12A 16PWRQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 12A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 300kHz ~ 1.5MHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: 16-PowerQFN
Synchronous Rectifier: Yes
Voltage - Output (Max): 18.06V
Voltage - Input (Min): 1V
Voltage - Output (Min/Fixed): 0.5V
Part Status: Obsolete
Produkt ist nicht verfügbar
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IR3895MTR1PBF ir3895m.pdf?fileId=5546d462533600a4015355d5dd261811
IR3895MTR1PBF
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJ 16A 16PQFN
Produkt ist nicht verfügbar
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IR3897MTR1PBF ir3897m.pdf?fileId=5546d462533600a4015355d5e3731813
IR3897MTR1PBF
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJUSTABLE 4A 16PQFN
Produkt ist nicht verfügbar
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IRDC3894 irdc3894.pdf_fileid=5546d462533600a40153569f79de2c61.pdf
IRDC3894
Hersteller: Infineon Technologies
Description: BOARD EVAL SUPIRBUCK IR3894
Packaging: Bulk
Voltage - Output: 1.2V
Voltage - Input: 12V
Current - Output: 12A
Frequency - Switching: 600kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: IR3894
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+40.62 EUR
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IRDC3895 ir3895m.pdf?fileId=5546d462533600a4015355d5dd261811
IRDC3895
Hersteller: Infineon Technologies
Description: BOARD EVAL SUPIRBUCK IR3895
Packaging: Bulk
Voltage - Output: 1.2V
Voltage - Input: 12V
Current - Output: 16A
Frequency - Switching: 600kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: IR3895
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Obsolete
Produkt ist nicht verfügbar
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IR3895MTR1PBF ir3895m.pdf?fileId=5546d462533600a4015355d5dd261811
IR3895MTR1PBF
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJ 16A 16PQFN
Produkt ist nicht verfügbar
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IR3897MTR1PBF ir3897m.pdf?fileId=5546d462533600a4015355d5e3731813
IR3897MTR1PBF
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJUSTABLE 4A 16PQFN
Produkt ist nicht verfügbar
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IRF7342D2TRPBF IR_PartNumberingSystem.pdf
IRF7342D2TRPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 55V 3.4A 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 3.4A, 10V
FET Feature: Schottky Diode (Isolated)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 25 V
Produkt ist nicht verfügbar
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IRLR3110ZTRPBF irlr3110zpbf.pdf?fileId=5546d462533600a40153566cf6e2268a
IRLR3110ZTRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 42A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 38A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 25 V
auf Bestellung 10832 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.73 EUR
10+1.91 EUR
100+1.39 EUR
500+1.12 EUR
1000+1.07 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IRLR3705ZTRPBF irlr3705zpbf.pdf?fileId=5546d462533600a40153566d2d17269d
IRLR3705ZTRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 42A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
auf Bestellung 5343 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.10 EUR
10+2.13 EUR
100+1.47 EUR
500+1.19 EUR
1000+1.14 EUR
Mindestbestellmenge: 6
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IRF540NSTRRPBF description irf540nspbf.pdf?fileId=5546d462533600a4015355e3a72819a3
IRF540NSTRRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 33A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 16A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
Produkt ist nicht verfügbar
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IR25600SPBF ir25600.pdf?fileId=5546d462533600a4015355c9bcd116e7
IR25600SPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 15ns, 10ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 2.3A, 3.3A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR25601STRPBF Infineon-IR25601S-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a762d794ab8
IR25601STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 200ns, 100ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.3V
Current - Peak Output (Source, Sink): 60mA, 130mA
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR25602STRPBF ir25602.pdf
IR25602STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.03 EUR
5000+1.01 EUR
Mindestbestellmenge: 2500
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IR25603SPBF ir25603.pdf?fileId=5546d462533600a4015355c9e46716ef
IR25603SPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 15.6V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 45ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 180mA, 260mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR25604STRPBF Infineon-IR25604S-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a88c8814ac5
IR25604STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.04 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IR25606STRPBF Infineon-IR25606S-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a88cfb54ac8
IR25606STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.00 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IR25607SPbF Infineon-IR25607S-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a9172b34acb
IR25607SPbF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 25ns, 17ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.51 EUR
10+4.76 EUR
45+4.09 EUR
135+3.75 EUR
270+3.58 EUR
540+3.45 EUR
Mindestbestellmenge: 3
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IR4301MTRPBF ir4301.pdf?fileId=5546d462533600a4015355d5fc691819
IR4301MTRPBF
Hersteller: Infineon Technologies
Description: IC AMP CLASS D MONO 160W PQFN22
Features: Depop, Differential Inputs
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerVQFN
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 100°C (TA)
Voltage - Supply: 10V ~ 15V
Max Output Power x Channels @ Load: 160W x 1 @ 4Ohm
Supplier Device Package: 22-PQFN (5x6)
Produkt ist nicht verfügbar
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IR4302MTRPBF ir4302.pdf?fileId=5546d462533600a4015355d602a9181d
IR4302MTRPBF
Hersteller: Infineon Technologies
Description: IC AMP CLASS D STEREO 130W 44QFN
Features: Depop, Differential Inputs
Packaging: Tape & Reel (TR)
Package / Case: 44-PowerVFQFN
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 100°C (TA)
Voltage - Supply: 10V ~ 15V
Max Output Power x Channels @ Load: 130W x 2 @ 4Ohm
Supplier Device Package: 44-PQFN (7x7)
Part Status: Active
Produkt ist nicht verfügbar
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IR25601STRPBF Infineon-IR25601S-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a762d794ab8
IR25601STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 200ns, 100ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.3V
Current - Peak Output (Source, Sink): 60mA, 130mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 2094 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.45 EUR
10+1.78 EUR
25+1.62 EUR
100+1.44 EUR
250+1.35 EUR
500+1.30 EUR
1000+1.26 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IR25602STRPBF ir25602.pdf
IR25602STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 7825 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.11 EUR
12+1.53 EUR
25+1.39 EUR
100+1.23 EUR
250+1.15 EUR
500+1.11 EUR
1000+1.07 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IR25604STRPBF Infineon-IR25604S-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a88c8814ac5
IR25604STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 2850 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.13 EUR
12+1.55 EUR
25+1.40 EUR
100+1.24 EUR
250+1.16 EUR
500+1.11 EUR
1000+1.08 EUR
Mindestbestellmenge: 9
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IR25606STRPBF Infineon-IR25606S-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a88cfb54ac8
IR25606STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 6220 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.04 EUR
12+1.49 EUR
25+1.34 EUR
100+1.19 EUR
250+1.12 EUR
500+1.07 EUR
1000+1.04 EUR
Mindestbestellmenge: 9
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IR4301MTRPBF ir4301.pdf?fileId=5546d462533600a4015355d5fc691819
IR4301MTRPBF
Hersteller: Infineon Technologies
Description: IC AMP CLASS D MONO 160W PQFN22
Features: Depop, Differential Inputs
Packaging: Cut Tape (CT)
Package / Case: 22-PowerVQFN
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 100°C (TA)
Voltage - Supply: 10V ~ 15V
Max Output Power x Channels @ Load: 160W x 1 @ 4Ohm
Supplier Device Package: 22-PQFN (5x6)
auf Bestellung 3621 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.28 EUR
10+4.74 EUR
25+4.36 EUR
100+3.93 EUR
250+3.73 EUR
500+3.61 EUR
1000+3.51 EUR
Mindestbestellmenge: 3
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IR4302MTRPBF ir4302.pdf?fileId=5546d462533600a4015355d602a9181d
IR4302MTRPBF
Hersteller: Infineon Technologies
Description: IC AMP CLASS D STEREO 130W 44QFN
Features: Depop, Differential Inputs
Packaging: Cut Tape (CT)
Package / Case: 44-PowerVFQFN
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 100°C (TA)
Voltage - Supply: 10V ~ 15V
Max Output Power x Channels @ Load: 130W x 2 @ 4Ohm
Supplier Device Package: 44-PQFN (7x7)
Part Status: Active
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.00 EUR
Mindestbestellmenge: 2
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CY8CMBR2110-24LQXI Infineon-CY8CMBR2110_CapSense_Express_10-Button_Controller.-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec7e3463fc5&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8CMBR2110-24LQXI
Hersteller: Infineon Technologies
Description: IC MBR 10 BUTTON 10 LED 32QFN
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Type: Buttons
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Current - Supply: 3.4mA
Number of Inputs: Up to 10
Supplier Device Package: 32-QFN (5x5)
Proximity Detection: No
LED Driver Channels: Up to 10
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.40 EUR
10+4.11 EUR
25+3.92 EUR
Mindestbestellmenge: 4
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IKD10N60RFATMA1 DS_IKD10N60RF_2_1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a304335c2937a0135e7ea2d2d7a72
IKD10N60RFATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 20A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 72 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/168ns
Switching Energy: 190µJ (on), 160µJ (off)
Test Condition: 400V, 10A, 26Ohm, 15V
Gate Charge: 64 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 150 W
auf Bestellung 2480 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.33 EUR
10+2.13 EUR
100+1.44 EUR
500+1.15 EUR
1000+1.10 EUR
Mindestbestellmenge: 6
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IKD10N60RFATMA1 DS_IKD10N60RF_2_1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a304335c2937a0135e7ea2d2d7a72
IKD10N60RFATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 20A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 72 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/168ns
Switching Energy: 190µJ (on), 160µJ (off)
Test Condition: 400V, 10A, 26Ohm, 15V
Gate Charge: 64 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 150 W
Produkt ist nicht verfügbar
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IPI020N06N IPI020N06N_Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433727a44301372b6b23064900
IPI020N06N
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 29A TO262-3
auf Bestellung 33 Stücke:
Lieferzeit 10-14 Tag (e)
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IPI029N06NAKSA1 IPI029N06N_Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433727a44301372bab38f54926
IPI029N06NAKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 24A/100A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 75µA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 30 V
auf Bestellung 26 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.42 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IPP060N06NAKSA1 IPP060N06N_Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433727a44301372c06d9d7498a
IPP060N06NAKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 17A/45A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 45A, 10V
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 36µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC014N04LSATMA1 DS_BSC014N04LS_2_1.PDF?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a3043353fdc16013552e99a8147f1
BSC014N04LSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 32/100A SUPERSO8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SuperSO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V
auf Bestellung 10023 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.69 EUR
10+1.97 EUR
100+1.53 EUR
500+1.26 EUR
1000+1.03 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
BSZ023N04LSATMA1 BSZ023N04LS.pdf
BSZ023N04LSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 22A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB010N06NATMA1 IPB010N06N_Rev2+0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a3043353fdc1601355341f17a485f
IPB010N06NATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 45A/180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 208 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 30 V
auf Bestellung 2601 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.60 EUR
10+8.80 EUR
100+6.72 EUR
500+5.98 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IPB014N06NATMA1 IPB014N06N_Rev2+0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a3043353fdc160135534e951e4873
IPB014N06NATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 34A/180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 143µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 30 V
auf Bestellung 3603 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.06 EUR
10+5.11 EUR
100+3.64 EUR
500+3.01 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IPB026N06N IPB026N06N_Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a3043372d5cc8013754c7b2a74f7c
IPB026N06N
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 25A TO263-3
auf Bestellung 1928 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
IPB057N06NATMA1 IPB057N06N_Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433727a44301372c2ed50b49b3
IPB057N06NATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 17A/45A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 45A, 10V
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 36µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V
auf Bestellung 395 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.64 EUR
10+2.34 EUR
100+1.59 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IPD025N06NATMA1 IPD025N06N_Rev2+1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304336415dec0136531648062c76
IPD025N06NATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 90A, 10V
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 95µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 30 V
auf Bestellung 8694 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.86 EUR
10+3.04 EUR
100+2.39 EUR
500+1.94 EUR
1000+1.79 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IPD053N06NATMA1 IPD053N06N_Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433727a44301372c22c4c3499f
IPD053N06NATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 18A/45A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 45A, 10V
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 36µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V
auf Bestellung 6632 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.60 EUR
11+1.76 EUR
100+1.24 EUR
500+1.01 EUR
1000+0.93 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IKD15N60RFATMA1 DS_IKD15N60RF_2_1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a304335c2937a0135e75d857b7a1a
IKD15N60RFATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 30A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/160ns
Switching Energy: 270µJ (on), 250µJ (off)
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 250 W
auf Bestellung 5444 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.19 EUR
10+2.70 EUR
100+1.85 EUR
500+1.49 EUR
1000+1.48 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IKD15N60RFATMA1 DS_IKD15N60RF_2_1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a304335c2937a0135e75d857b7a1a
IKD15N60RFATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/160ns
Switching Energy: 270µJ (on), 250µJ (off)
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 250 W
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.21 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
BSC014N06NSATMA1 BSC014N06NS_Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a3043382e837301386ab95a521dcd
BSC014N06NSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 30A/100A TDSON7
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.45mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 120µA
Supplier Device Package: PG-TDSON-8-17
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 30 V
auf Bestellung 13970 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.00 EUR
10+3.74 EUR
100+2.62 EUR
500+2.33 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
BSC016N06NSATMA1 BSC016N06NS_rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a3043353fdc160135532b353c483c
BSC016N06NSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 30A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 95µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 30 V
auf Bestellung 15979 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.45 EUR
10+3.25 EUR
100+2.29 EUR
500+1.80 EUR
1000+1.60 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
BSC039N06NSATMA1 BSC039N06NS_Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433727a44301372c3adce949c7
BSC039N06NSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 19A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 36µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V
auf Bestellung 12741 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.02 EUR
12+1.55 EUR
100+1.29 EUR
500+1.21 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
BSZ042N06NSATMA1 BSZ042N06NS_Rev2.0.pdf?folderId=db3a30431ddc9372011ebafa04517f8b&fileId=db3a3043345a30bc013465d4bf1862fd
BSZ042N06NSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 17A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 36µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V
auf Bestellung 12823 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+1.97 EUR
12+1.51 EUR
100+1.28 EUR
500+1.12 EUR
1000+1.06 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
BSC028N06NSATMA1 BSC028N06NS_Rev2.0.pdf?folderId=db3a30431ddc9372011ebafa04517f8b&fileId=db3a3043345a30bc013465d221bd62f9
BSC028N06NSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 23A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 50µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 30 V
auf Bestellung 5823 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.75 EUR
10+2.70 EUR
100+2.06 EUR
500+1.67 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
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