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BGB719N7ESDE6327XTMA1 BGB719N7ESDE6327XTMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IC RF AMP FM 10MHZ-1GHZ TSNP7-6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 10MHz ~ 1GHz
RF Type: FM
Voltage - Supply: 3V
Gain: 13.5dB
Current - Supply: 2.8mA
Noise Figure: 1.2dB
P1dB: -6dBm
Test Frequency: 100MHz
Supplier Device Package: PG-TSNP-7-6
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21+0.84 EUR
25+0.78 EUR
100+0.72 EUR
250+0.68 EUR
500+0.67 EUR
1000+0.65 EUR
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BGM 1034N7 E6327 BGM 1034N7 E6327 Infineon Technologies bgm1034N7.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a304334fac4c60134fafa93ce0011 Description: IC AMP MMIC RF 17.0DB TSNP-7
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BGS15AN16E6327XTSA1 BGS15AN16E6327XTSA1 Infineon Technologies BGS15AN16_v2_1.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433f1b26e8013f2d44cb463811 Description: IC RF SWITCH SP5T 3GHZ TSNP16-3
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ESD1P0RFWH6327XTSA1 ESD1P0RFWH6327XTSA1 Infineon Technologies esd1p0rfseries.pdf?folderId=db3a30431441fb5d01149221c9230fb2&fileId=db3a30431441fb5d01149228afda0fc7 Description: TVS DIODE 70VWM 15VC PGSOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet, HDMI, RF Antenna
Capacitance @ Frequency: 1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 70V (Max)
Supplier Device Package: PG-SOT323
Unidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 15V
Power Line Protection: No
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ESD3V3S1B02LRHE6327XTSA1 ESD3V3S1B02LRHE6327XTSA1 Infineon Technologies ESD3V3S1B_ESD_Transient_Protection_Diode_Infineon.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a3043382e837301385c223ad03336 Description: TVS DIODE 3.3VWM 6.8VC TSLP2-17
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ESD3V3XU1USE6327XTSA1 ESD3V3XU1USE6327XTSA1 Infineon Technologies ESD3V3XU1US.pdf Description: TVS DIODE 3.3VWM 11VC TSSLP-2-1
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 11V (Typ)
Voltage - Breakdown (Min): 6.5V (Typ)
Unidirectional Channels: 1
Supplier Device Package: PG-TSSLP-2-1
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Capacitance @ Frequency: 0.4pF @ 1MHz
Applications: Ethernet, HDMI
Operating Temperature: -40°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Cut Tape (CT)
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TVS3V3L4UE6327HTSA1 TVS3V3L4UE6327HTSA1 Infineon Technologies TVS3V3L4U_rev_2_2.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a3043382e837301385be7912532ed Description: TVS DIODE 3.3VWM 7.7VC PGSC746
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 20A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-SC74-6
Unidirectional Channels: 4
Bidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 7.7V (Typ)
Power Line Protection: No
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BGA 925L6 E6327 BGA 925L6 E6327 Infineon Technologies BGA925L6.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a3043327f13e30132a4db54e64337 Description: IC AMP MMIC RF GNSS LNA TSLP-6
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BGM 1034N7 E6327 BGM 1034N7 E6327 Infineon Technologies bgm1034N7.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a304334fac4c60134fafa93ce0011 Description: IC AMP MMIC RF 17.0DB TSNP-7
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ESD3V3S1B02LRHE6327XTSA1 ESD3V3S1B02LRHE6327XTSA1 Infineon Technologies ESD3V3S1B_ESD_Transient_Protection_Diode_Infineon.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a3043382e837301385c223ad03336 Description: TVS DIODE 3.3VWM 6.8VC TSLP2-17
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BAR5002VH6327XTSA1 BAR5002VH6327XTSA1 Infineon Technologies bar50series.pdf?folderId=db3a304314dca3890114fea780a30a91&fileId=db3a304314dca3890114fea7dd410a92 Description: RF DIODE PIN 50V 250MW PG-SC79-2
Power Dissipation (Max): 250 mW
Current - Max: 100 mA
Part Status: Active
Supplier Device Package: PG-SC79-2
Voltage - Peak Reverse (Max): 50V
Resistance @ If, F: 4.5Ohm @ 10mA, 100MHz
Capacitance @ Vr, F: 0.4pF @ 5V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: PIN - Single
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
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BAR6306WH6327XTSA1 BAR6306WH6327XTSA1 Infineon Technologies INFNS15694-1.pdf?t.download=true&u=5oefqw Description: RF DIODE PIN 50V 250MW PG-SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT323
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
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BAR6406E6327HTSA1 BAR6406E6327HTSA1 Infineon Technologies Infineon-BAR64-06-DS-v01_01-EN.pdf?fileId=5546d462689a790c01690f0300ea3908 Description: RF DIODE PIN 150V 250MW PG-SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
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BAR6502VH6327XTSA1 BAR6502VH6327XTSA1 Infineon Technologies bar65series.pdf?folderId=db3a304314dca3890114fea780a30a91&fileId=db3a304314dca3890114ff1c81b50af0 Description: RF DIODE PIN 30V 250MW PG-SC79-2
Power Dissipation (Max): 250 mW
Current - Max: 100 mA
Part Status: Active
Supplier Device Package: PG-SC79-2
Voltage - Peak Reverse (Max): 30V
Resistance @ If, F: 900mOhm @ 10mA, 100MHz
Capacitance @ Vr, F: 0.8pF @ 3V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: PIN - Single
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
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BAR81WH6327XTSA1 BAR81WH6327XTSA1 Infineon Technologies bar81series.pdf?folderId=db3a304314dca3890114fea780a30a91&fileId=db3a304314dca3890114ff203eb70af2 Description: DIODE STANDAR 30V 100MW SOT343-4
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Diode Type: Standard - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.9pF @ 3V, 1MHz
Resistance @ If, F: 1Ohm @ 5mA, 100MHz
Voltage - Peak Reverse (Max): 30V
Supplier Device Package: PG-SOT343-4-2
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 100 mW
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BAR9002LSE6327XTSA1 BAR9002LSE6327XTSA1 Infineon Technologies bar90series.pdf Description: RF DIODE PIN 80V 150MW TSSLP-2
Supplier Device Package: PG-TSSLP-2-1
Voltage - Peak Reverse (Max): 80V
Resistance @ If, F: 800mOhm @ 10mA, 100MHz
Capacitance @ Vr, F: 0.35pF @ 1V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: PIN - Single
Package / Case: 0201 (0603 Metric)
Packaging: Cut Tape (CT)
Power Dissipation (Max): 150 mW
Current - Max: 100 mA
Part Status: Obsolete
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BAS3005A02VH6327XTSA1 BAS3005A02VH6327XTSA1 Infineon Technologies Infineon-BAS3005ASERIES-DS-v01_01-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30432d9b3066012db872f12d0bb7 Description: DIODE SCHOTTKY 30V 500MA PGSC792
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 15pF @ 5V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: PG-SC79-2
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 500 mA
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
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BAT15099E6327HTSA1 BAT15099E6327HTSA1 Infineon Technologies INFNS15420-1.pdf?t.download=true&u=5oefqw Description: DIODE SCHOTTKY 4V 100MW SOT143-4
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT-143-3D
Part Status: Active
Current - Max: 110 mA
Power Dissipation (Max): 100 mW
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BAT1704WH6327XTSA1 BAT1704WH6327XTSA1 Infineon Technologies Infineon-BAT17-04W-DS-v01_00-EN.pdf?fileId=5546d46265f064ff016638963bf54e8f Description: DIODE SCHOTTKY 4V 150MW SOT323-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Diode Type: Schottky - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT323
Part Status: Active
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
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BAT1705WH6327XTSA1 BAT1705WH6327XTSA1 Infineon Technologies BAT17_6-15-11.pdf Description: DIODE SCHOTTKY 4V 150MW SOT323-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Diode Type: Schottky - 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT323
Part Status: Active
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
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BAT1706WH6327XTSA1 BAT1706WH6327XTSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: DIODE SCHOTTKY 4V 150MW SOT323-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Diode Type: Schottky - 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT323
Part Status: Obsolete
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
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BAT1804E6327HTSA1 BAT1804E6327HTSA1 Infineon Technologies bat18series.pdf?folderId=db3a304314dca3890114fde87a7a09ec&fileId=db3a304314dca3890114fe3a83ef0a87 Description: RF DIODE PIN 35V PG-SOT23
Current - Reverse Leakage @ Vr: 20 nA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 35 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PG-SOT23
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Reverse Recovery Time (trr): 120 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Current - Max: 100 mA
Voltage - Peak Reverse (Max): 35V
Capacitance @ Vr, F: 1pF @ 20V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: PIN - 1 Pair Series Connection
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BAT68E6327HTSA1 BAT68E6327HTSA1 Infineon Technologies infineon-bat68series-ds-en.pdf Description: DIODE SCHOTTKY 8V 150MW SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Resistance @ If, F: 10Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 8V
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
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BAT6804E6327HTSA1 BAT6804E6327HTSA1 Infineon Technologies bat68series.pdf?folderId=db3a304314dca389011518104e5d0df2&fileId=db3a304314dca38901151819a1ab0df5 Description: DIODE SCHOTTKY 8V 150MW SOT23-3
Power Dissipation (Max): 150 mW
Current - Max: 130 mA
Part Status: Active
Supplier Device Package: PG-SOT23
Voltage - Peak Reverse (Max): 8V
Resistance @ If, F: 10Ohm @ 5mA, 10kHz
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: Schottky - 1 Pair Series Connection
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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BAT6804WH6327XTSA1 BAT6804WH6327XTSA1 Infineon Technologies bat68series.pdf?folderId=db3a304314dca389011518104e5d0df2&fileId=db3a304314dca38901151819a1ab0df5 Description: DIODE SCHOTTKY 8V 150MW SOT323-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Diode Type: Schottky - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Resistance @ If, F: 10Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 8V
Supplier Device Package: PG-SOT323
Part Status: Active
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
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BAT6806WH6327XTSA1 BAT6806WH6327XTSA1 Infineon Technologies bat68series.pdf?folderId=db3a304314dca389011518104e5d0df2&fileId=db3a304314dca38901151819a1ab0df5 Description: DIODE SCHOTTKY 8V 150MW SOT323-3
Power Dissipation (Max): 150 mW
Current - Max: 130 mA
Part Status: Obsolete
Supplier Device Package: PG-SOT323
Voltage - Peak Reverse (Max): 8V
Resistance @ If, F: 10Ohm @ 5mA, 10kHz
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: Schottky - 1 Pair Common Anode
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BFP181E7764HTSA1 BFP181E7764HTSA1 Infineon Technologies bfp181.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef6801142665c77b0601&location=.en.product.findProductTypeByName.html_dgdl_bfp181.pdf Description: RF TRANS NPN 12V 8GHZ SOT-143-3D
Part Status: Active
Supplier Device Package: PG-SOT-143-3D
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Frequency - Transition: 8GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 70mA, 8V
Voltage - Collector Emitter Breakdown (Max): 12V
Current - Collector (Ic) (Max): 20mA
Power - Max: 175mW
Gain: 17.5dB ~ 21dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Packaging: Cut Tape (CT)
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BFP183WH6327XTSA1 BFP183WH6327XTSA1 Infineon Technologies bfp183w.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef6801142672e8cd0613 Description: RF TRANS NPN 12V 8.5GHZ SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 22dB
Power - Max: 450mW
Current - Collector (Ic) (Max): 65mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
Frequency - Transition: 8.5GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
Produkt ist nicht verfügbar
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BFP420FH6327XTSA1 BFP420FH6327XTSA1 Infineon Technologies Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920 Description: RF TRANS NPN 5.5V 25GHZ 4-TSFP
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 19.5dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 5.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Supplier Device Package: 4-TSFP
Part Status: Active
Produkt ist nicht verfügbar
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BFP520H6327XTSA1 BFP520H6327XTSA1 Infineon Technologies Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920 Description: RF TRANS NPN 3.5V 45GHZ SOT-343
Part Status: Active
Supplier Device Package: PG-SOT343-3D
Noise Figure (dB Typ @ f): 0.95dB @ 1.8GHz
Frequency - Transition: 45GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 20mA, 2V
Voltage - Collector Emitter Breakdown (Max): 3.5V
Current - Collector (Ic) (Max): 40mA
Power - Max: 100mW
Gain: 22.5dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Packaging: Cut Tape (CT)
auf Bestellung 6196 Stücke:
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33+0.54 EUR
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100+0.42 EUR
250+0.39 EUR
500+0.37 EUR
1000+0.36 EUR
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BFP520FH6327XTSA1 BFP520FH6327XTSA1 Infineon Technologies Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920 Description: RF TRANS NPN 3.5V 45GHZ 4-TSFP
Part Status: Active
Packaging: Cut Tape (CT)
Supplier Device Package: 4-TSFP
Noise Figure (dB Typ @ f): 0.95dB @ 1.8GHz
Frequency - Transition: 45GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 20mA, 2V
Voltage - Collector Emitter Breakdown (Max): 3.5V
Current - Collector (Ic) (Max): 40mA
Power - Max: 100mW
Gain: 22.5dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Produkt ist nicht verfügbar
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BFP620FH7764XTSA1 BFP620FH7764XTSA1 Infineon Technologies Infineon-BFP620F-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f03a08d3926 Description: RF TRANS NPN 2.8V 65GHZ 4-TSFP
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21dB ~ 10dB
Power - Max: 185mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 2.8V
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 50mA, 1.5V
Frequency - Transition: 65GHz
Noise Figure (dB Typ @ f): 0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz
Supplier Device Package: 4-TSFP
Part Status: Active
Produkt ist nicht verfügbar
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BFP640FH6327XTSA1 BFP640FH6327XTSA1 Infineon Technologies Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920 Description: RF TRANS NPN 4.5V 40GHZ 4-TSFP
Part Status: Active
Supplier Device Package: 4-TSFP
Noise Figure (dB Typ @ f): 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
Frequency - Transition: 40GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V
Voltage - Collector Emitter Breakdown (Max): 4.5V
Current - Collector (Ic) (Max): 50mA
Power - Max: 200mW
Gain: 23dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Packaging: Cut Tape (CT)
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28+0.65 EUR
40+0.45 EUR
45+0.4 EUR
100+0.35 EUR
250+0.32 EUR
500+0.3 EUR
1000+0.29 EUR
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BFP650FH6327XTSA1 BFP650FH6327XTSA1 Infineon Technologies Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920 Description: RF TRANS NPN 4.5V 42GHZ 4-TSFP
Part Status: Active
Supplier Device Package: 4-TSFP
Noise Figure (dB Typ @ f): 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz
Frequency - Transition: 42GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 80mA, 3V
Voltage - Collector Emitter Breakdown (Max): 4.5V
Current - Collector (Ic) (Max): 150mA
Power - Max: 500mW
Gain: 11dB ~ 21.5dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Packaging: Cut Tape (CT)
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24+0.74 EUR
34+0.52 EUR
38+0.46 EUR
100+0.4 EUR
250+0.37 EUR
500+0.36 EUR
1000+0.34 EUR
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BFR181WH6327XTSA1 BFR181WH6327XTSA1 Infineon Technologies bfr181w.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef680114268dc6c1063f Description: RF TRANS NPN 12V 8GHZ PG-SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 19dB
Power - Max: 175mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT323
Part Status: Active
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Lieferzeit 10-14 Tag (e)
32+0.56 EUR
47+0.38 EUR
52+0.34 EUR
100+0.29 EUR
250+0.27 EUR
500+0.25 EUR
1000+0.24 EUR
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BFR193L3E6327XTMA1 BFR193L3E6327XTMA1 Infineon Technologies bfr193l3.pdf?folderId=db3a30431400ef68011425b2dfaf05c6&fileId=db3a30431400ef680114271fc1ec06db Description: RF TRANS NPN 12V 8GHZ TSLP-3-1
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12.5dB ~ 19dB
Power - Max: 580mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-TSLP-3-1
Part Status: Active
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39+0.46 EUR
55+0.32 EUR
62+0.29 EUR
100+0.25 EUR
250+0.23 EUR
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2500+0.2 EUR
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BFR193WH6327XTSA1 BFR193WH6327XTSA1 Infineon Technologies infineon-bfr193w-ds-en.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef68011426b3b6650674 Description: RF TRANS NPN 12V 8GHZ PG-SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10.5dB ~ 16dB
Power - Max: 580mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT323
Part Status: Active
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32+0.56 EUR
47+0.38 EUR
52+0.34 EUR
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250+0.27 EUR
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1000+0.24 EUR
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BFR340FH6327XTSA1 BFR340FH6327XTSA1 Infineon Technologies Infineon-BFR340F-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f03e34d3934 Description: RF TRANS NPN 9V 14GHZ PG-TSFP-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 5mA, 3V
Voltage - Collector Emitter Breakdown (Max): 9V
Current - Collector (Ic) (Max): 20mA
Power - Max: 75mW
Gain: 13dB ~ 28dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: PG-TSFP-3
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 100MHz ~ 2.4GHz
Frequency - Transition: 14GHz
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100+0.19 EUR
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BFR460L3E6327XTMA1 BFR460L3E6327XTMA1 Infineon Technologies Infineon-BFR460L3-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f04152e393e Description: RF TRANS NPN 5.8V 22GHZ TSLP-3-1
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 16dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 5.8V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 3V
Frequency - Transition: 22GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 1.35dB @ 1.8GHz ~ 3GHz
Supplier Device Package: PG-TSLP-3-1
Part Status: Active
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BFR93AWH6327XTSA1 BFR93AWH6327XTSA1 Infineon Technologies Infineon-BFR93AW-DS-v01_01-en.pdf?fileId=db3a30431441fb5d0114acaaec8c148f Description: RF TRANS NPN 12V 6GHZ PG-SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10.5dB ~ 15.5dB
Power - Max: 300mW
Current - Collector (Ic) (Max): 90mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Frequency - Transition: 6GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT323
Part Status: Active
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32+0.56 EUR
47+0.38 EUR
52+0.34 EUR
100+0.29 EUR
250+0.27 EUR
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1000+0.24 EUR
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BFS481H6327XTSA1 BFS481H6327XTSA1 Infineon Technologies infineon-bfs481-ds-en.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef680114270d383406be Description: RF TRANS 2 NPN 12V 8GHZ SOT363-6
Packaging: Cut Tape (CT)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Gain: 20dB
Power - Max: 175mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT363-PO
Part Status: Active
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18+1.02 EUR
25+0.73 EUR
28+0.65 EUR
100+0.56 EUR
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BFS483H6327XTSA1 BFS483H6327XTSA1 Infineon Technologies bfs483.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef6801142710876006c5 Description: RF TRANS 2 NPN 12V 8GHZ SOT363-6
Part Status: Active
Supplier Device Package: PG-SOT363-PO
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
Frequency - Transition: 8GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
Voltage - Collector Emitter Breakdown (Max): 12V
Current - Collector (Ic) (Max): 65mA
Power - Max: 450mW
Gain: 19dB
Operating Temperature: 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
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BGA231L7E6327XTSA1 BGA231L7E6327XTSA1 Infineon Technologies BGA231L7.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30432f69f146012f78199f332d8d Description: IC RF AMP GPS 1575.42MHZ TSLP7-1
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BGA420H6327XTSA1 BGA420H6327XTSA1 Infineon Technologies bga420.pdf?folderId=db3a30431441fb5d0114b654e6581730&fileId=db3a304314dca3890115418cec781637 Description: IC RF AMP GPS 0HZ-3GHZ SOT343-3D
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 0Hz ~ 3GHz
RF Type: General Purpose
Voltage - Supply: 3V ~ 6V
Gain: 13dB
Current - Supply: 6.7mA
Noise Figure: 2.3dB
P1dB: -2.5dBm
Test Frequency: 1GHz
Supplier Device Package: PG-SOT343-3D
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BGA713L7E6327XTSA1 BGA713L7E6327XTSA1 Infineon Technologies BGA713L7.pdf Description: IC AMP UMTS 728MHZ-768MHZ TSLP7
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BGA736L16E6327XTSA1 BGA736L16E6327XTSA1 Infineon Technologies BGA736L16.pdf Description: IC AMP W-CDMA 800/900MHZ TSLP16
Mounting Type: Surface Mount
Package / Case: 16-XFQFN Exposed Pad
Packaging: Cut Tape (CT)
Supplier Device Package: TSLP-16-1
Test Frequency: 1.9GHz
P1dB: -11dBm
Noise Figure: 7.8dB
Current - Supply: 5.3mA
Gain: 16.1dB
Voltage - Supply: 2.7V ~ 3V
RF Type: W-CDMA, HSPDA
Frequency: 800MHz, 900MHz, 1.8GHz, 1.9GHz, 2.1GHz
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4+5.12 EUR
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BGM 1032N7 E6327 BGM 1032N7 E6327 Infineon Technologies bgm1032n7_final_30.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433072cd8f013073f4f2210025 Description: MODULE GPS FRONT-END TSNP-7-10
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BGM 1033N7 E6327 BGM 1033N7 E6327 Infineon Technologies bgm1033n7_final_30.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433072cd8f013073f6f5670029 Description: MODULE GPS FRONT-END TSNP-7-10
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ESD5V0L1B-02V H6327 ESD5V0L1B-02V H6327 Infineon Technologies ESD5V0L1B-02V.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30432d081e66012d563aa234296a Description: TVS DIODE 5VWM 25VC SC79-2-1
auf Bestellung 4617 Stücke:
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ESD5V0S5USH6327XTSA1 ESD5V0S5USH6327XTSA1 Infineon Technologies esd5v0sxus.pdf?folderId=db3a30431441fb5d0114883802cf0d02&fileId=db3a30431441fb5d0114883be5d40d04 Description: TVS DIODE 5VWM 13VC SOT363
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ESD5V3U2U03FH6327XTSA1 ESD5V3U2U03FH6327XTSA1 Infineon Technologies esd5v3u2useries.pdf?folderId=db3a30431441fb5d011488a9e66f0ded&fileId=db3a30431b0626df011b0d3e3ca97dc0 Description: TVS DIODE 5.3VWM 15VC PGTSFP3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: PG-TSFP-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 15V
Power Line Protection: No
Part Status: Active
auf Bestellung 28232 Stücke:
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15+1.2 EUR
24+0.74 EUR
100+0.48 EUR
500+0.36 EUR
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ESD8V0R1B02ELE6327XTMA1 ESD8V0R1B02ELE6327XTMA1 Infineon Technologies ESD8V0R1B_Series.pdf Description: TVS DIODE 14VWM 28VC TSLP-2-18
Package / Case: SOD-882
Packaging: Cut Tape (CT)
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 28V
Voltage - Breakdown (Min): 8.5V
Bidirectional Channels: 1
Supplier Device Package: PG-TSLP-2-18
Voltage - Reverse Standoff (Typ): 14V (Max)
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Capacitance @ Frequency: 4pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
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BGM 1032N7 E6327 BGM 1032N7 E6327 Infineon Technologies bgm1032n7_final_30.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433072cd8f013073f4f2210025 Description: MODULE GPS FRONT-END TSNP-7-10
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BGM 1033N7 E6327 BGM 1033N7 E6327 Infineon Technologies bgm1033n7_final_30.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433072cd8f013073f6f5670029 Description: MODULE GPS FRONT-END TSNP-7-10
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ESD5V0L1B-02V H6327 ESD5V0L1B-02V H6327 Infineon Technologies ESD5V0L1B-02V.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30432d081e66012d563aa234296a Description: TVS DIODE 5VWM 25VC SC79-2-1
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CY8C5467AXI-LP108 CY8C5467AXI-LP108 Infineon Technologies download Description: IC MCU 32BIT 128KB FLASH 100TQFP
Number of I/O: 62
Part Status: Active
Supplier Device Package: 100-TQFP (14x14)
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Connectivity: I2C, LINbus, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 1x12b; D/A 2x8b
Core Processor: ARM® Cortex®-M3
EEPROM Size: 2K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 32K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 67MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
auf Bestellung 966 Stücke:
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1+20.5 EUR
10+16.16 EUR
90+13.95 EUR
180+13.49 EUR
270+13.26 EUR
540+12.93 EUR
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CY8C5667AXI-LP006 CY8C5667AXI-LP006 Infineon Technologies download Description: IC MCU 32BIT 128KB FLASH 100TQFP
Part Status: Active
Supplier Device Package: 100-TQFP (14x14)
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Connectivity: I2C, LINbus, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 2x12b; D/A 4x8b
Core Processor: ARM® Cortex®-M3
EEPROM Size: 2K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
DigiKey Programmable: Not Verified
Number of I/O: 62
RAM Size: 32K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 67MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
auf Bestellung 176 Stücke:
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TLE42744GV50ATMA1 TLE42744GV50ATMA1 Infineon Technologies Infineon-TLE42744G%20V50-DataSheet-v01_40-EN.pdf?fileId=8ac78c8c93dda25b019519be53597418 Description: IC REG LIN 5V 400MA PG-TO263-3-1
Packaging: Cut Tape (CT)
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-3-1
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Qualification: AEC-Q100
auf Bestellung 1235 Stücke:
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25+1.88 EUR
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TLE42764DV50ATMA1 TLE42764DV50ATMA1 Infineon Technologies Infineon-TLE42764-DS-v01_30-EN.pdf?fileId=5546d46258fc0bc101595f8e8c751fa3 Description: IC REG LIN 5V 400MA PG-TO252-5
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-5
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Grade: Automotive
Part Status: Active
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 25 mA
Qualification: AEC-Q100
auf Bestellung 12335 Stücke:
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TLE42764GV50ATMA1 TLE42764GV50ATMA1 Infineon Technologies Infineon-TLE42764-DS-v01_30-EN.pdf?fileId=5546d46258fc0bc101595f8e8c751fa3 Description: IC REG LINEAR 5V 400MA TO263-5
Current - Supply (Max): 25 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.5V @ 250mA
PSRR: 54dB (100Hz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: TO-263-5
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 220 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 400mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
auf Bestellung 1719 Stücke:
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BGB719N7ESDE6327XTMA1 fundamentals-of-power-semiconductors
BGB719N7ESDE6327XTMA1
Hersteller: Infineon Technologies
Description: IC RF AMP FM 10MHZ-1GHZ TSNP7-6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 10MHz ~ 1GHz
RF Type: FM
Voltage - Supply: 3V
Gain: 13.5dB
Current - Supply: 2.8mA
Noise Figure: 1.2dB
P1dB: -6dBm
Test Frequency: 100MHz
Supplier Device Package: PG-TSNP-7-6
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17+1.07 EUR
21+0.84 EUR
25+0.78 EUR
100+0.72 EUR
250+0.68 EUR
500+0.67 EUR
1000+0.65 EUR
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BGM 1034N7 E6327 bgm1034N7.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a304334fac4c60134fafa93ce0011
BGM 1034N7 E6327
Hersteller: Infineon Technologies
Description: IC AMP MMIC RF 17.0DB TSNP-7
auf Bestellung 16295 Stücke:
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BGS15AN16E6327XTSA1 BGS15AN16_v2_1.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433f1b26e8013f2d44cb463811
BGS15AN16E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH SP5T 3GHZ TSNP16-3
Produkt ist nicht verfügbar
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ESD1P0RFWH6327XTSA1 esd1p0rfseries.pdf?folderId=db3a30431441fb5d01149221c9230fb2&fileId=db3a30431441fb5d01149228afda0fc7
ESD1P0RFWH6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 70VWM 15VC PGSOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet, HDMI, RF Antenna
Capacitance @ Frequency: 1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 70V (Max)
Supplier Device Package: PG-SOT323
Unidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 15V
Power Line Protection: No
Produkt ist nicht verfügbar
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ESD3V3S1B02LRHE6327XTSA1 ESD3V3S1B_ESD_Transient_Protection_Diode_Infineon.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a3043382e837301385c223ad03336
ESD3V3S1B02LRHE6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 3.3VWM 6.8VC TSLP2-17
Produkt ist nicht verfügbar
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ESD3V3XU1USE6327XTSA1 ESD3V3XU1US.pdf
ESD3V3XU1USE6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 3.3VWM 11VC TSSLP-2-1
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 11V (Typ)
Voltage - Breakdown (Min): 6.5V (Typ)
Unidirectional Channels: 1
Supplier Device Package: PG-TSSLP-2-1
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Capacitance @ Frequency: 0.4pF @ 1MHz
Applications: Ethernet, HDMI
Operating Temperature: -40°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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TVS3V3L4UE6327HTSA1 TVS3V3L4U_rev_2_2.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a3043382e837301385be7912532ed
TVS3V3L4UE6327HTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 3.3VWM 7.7VC PGSC746
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 20A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-SC74-6
Unidirectional Channels: 4
Bidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 7.7V (Typ)
Power Line Protection: No
auf Bestellung 54821 Stücke:
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AnzahlPreis
11+1.62 EUR
18+1.01 EUR
100+0.66 EUR
500+0.51 EUR
1000+0.46 EUR
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BGA 925L6 E6327 BGA925L6.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a3043327f13e30132a4db54e64337
BGA 925L6 E6327
Hersteller: Infineon Technologies
Description: IC AMP MMIC RF GNSS LNA TSLP-6
auf Bestellung 23159 Stücke:
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BGM 1034N7 E6327 bgm1034N7.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a304334fac4c60134fafa93ce0011
BGM 1034N7 E6327
Hersteller: Infineon Technologies
Description: IC AMP MMIC RF 17.0DB TSNP-7
auf Bestellung 16330 Stücke:
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ESD3V3S1B02LRHE6327XTSA1 ESD3V3S1B_ESD_Transient_Protection_Diode_Infineon.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a3043382e837301385c223ad03336
ESD3V3S1B02LRHE6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 3.3VWM 6.8VC TSLP2-17
Produkt ist nicht verfügbar
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BAR5002VH6327XTSA1 bar50series.pdf?folderId=db3a304314dca3890114fea780a30a91&fileId=db3a304314dca3890114fea7dd410a92
BAR5002VH6327XTSA1
Hersteller: Infineon Technologies
Description: RF DIODE PIN 50V 250MW PG-SC79-2
Power Dissipation (Max): 250 mW
Current - Max: 100 mA
Part Status: Active
Supplier Device Package: PG-SC79-2
Voltage - Peak Reverse (Max): 50V
Resistance @ If, F: 4.5Ohm @ 10mA, 100MHz
Capacitance @ Vr, F: 0.4pF @ 5V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: PIN - Single
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
auf Bestellung 7132 Stücke:
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AnzahlPreis
84+0.21 EUR
124+0.14 EUR
142+0.12 EUR
167+0.11 EUR
250+0.096 EUR
500+0.091 EUR
1000+0.086 EUR
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BAR6306WH6327XTSA1 INFNS15694-1.pdf?t.download=true&u=5oefqw
BAR6306WH6327XTSA1
Hersteller: Infineon Technologies
Description: RF DIODE PIN 50V 250MW PG-SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT323
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
Produkt ist nicht verfügbar
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BAR6406E6327HTSA1 Infineon-BAR64-06-DS-v01_01-EN.pdf?fileId=5546d462689a790c01690f0300ea3908
BAR6406E6327HTSA1
Hersteller: Infineon Technologies
Description: RF DIODE PIN 150V 250MW PG-SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
auf Bestellung 8875 Stücke:
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AnzahlPreis
72+0.25 EUR
102+0.17 EUR
115+0.15 EUR
135+0.13 EUR
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500+0.11 EUR
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BAR6502VH6327XTSA1 bar65series.pdf?folderId=db3a304314dca3890114fea780a30a91&fileId=db3a304314dca3890114ff1c81b50af0
BAR6502VH6327XTSA1
Hersteller: Infineon Technologies
Description: RF DIODE PIN 30V 250MW PG-SC79-2
Power Dissipation (Max): 250 mW
Current - Max: 100 mA
Part Status: Active
Supplier Device Package: PG-SC79-2
Voltage - Peak Reverse (Max): 30V
Resistance @ If, F: 900mOhm @ 10mA, 100MHz
Capacitance @ Vr, F: 0.8pF @ 3V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: PIN - Single
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
auf Bestellung 8092 Stücke:
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AnzahlPreis
91+0.19 EUR
136+0.13 EUR
155+0.11 EUR
184+0.096 EUR
250+0.088 EUR
500+0.083 EUR
1000+0.078 EUR
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BAR81WH6327XTSA1 bar81series.pdf?folderId=db3a304314dca3890114fea780a30a91&fileId=db3a304314dca3890114ff203eb70af2
BAR81WH6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE STANDAR 30V 100MW SOT343-4
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Diode Type: Standard - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.9pF @ 3V, 1MHz
Resistance @ If, F: 1Ohm @ 5mA, 100MHz
Voltage - Peak Reverse (Max): 30V
Supplier Device Package: PG-SOT343-4-2
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 100 mW
auf Bestellung 23058 Stücke:
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AnzahlPreis
18+0.99 EUR
26+0.69 EUR
29+0.62 EUR
100+0.54 EUR
250+0.5 EUR
500+0.48 EUR
1000+0.46 EUR
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BAR9002LSE6327XTSA1 bar90series.pdf
BAR9002LSE6327XTSA1
Hersteller: Infineon Technologies
Description: RF DIODE PIN 80V 150MW TSSLP-2
Supplier Device Package: PG-TSSLP-2-1
Voltage - Peak Reverse (Max): 80V
Resistance @ If, F: 800mOhm @ 10mA, 100MHz
Capacitance @ Vr, F: 0.35pF @ 1V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: PIN - Single
Package / Case: 0201 (0603 Metric)
Packaging: Cut Tape (CT)
Power Dissipation (Max): 150 mW
Current - Max: 100 mA
Part Status: Obsolete
Produkt ist nicht verfügbar
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BAS3005A02VH6327XTSA1 Infineon-BAS3005ASERIES-DS-v01_01-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30432d9b3066012db872f12d0bb7
BAS3005A02VH6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 30V 500MA PGSC792
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 15pF @ 5V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: PG-SC79-2
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 500 mA
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
auf Bestellung 3048 Stücke:
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AnzahlPreis
23+0.79 EUR
37+0.48 EUR
100+0.3 EUR
500+0.23 EUR
1000+0.2 EUR
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BAT15099E6327HTSA1 INFNS15420-1.pdf?t.download=true&u=5oefqw
BAT15099E6327HTSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 4V 100MW SOT143-4
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT-143-3D
Part Status: Active
Current - Max: 110 mA
Power Dissipation (Max): 100 mW
auf Bestellung 2188 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
11+1.62 EUR
18+1 EUR
100+0.66 EUR
500+0.51 EUR
1000+0.46 EUR
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BAT1704WH6327XTSA1 Infineon-BAT17-04W-DS-v01_00-EN.pdf?fileId=5546d46265f064ff016638963bf54e8f
BAT1704WH6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 4V 150MW SOT323-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Diode Type: Schottky - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT323
Part Status: Active
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
auf Bestellung 13402 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
19+0.95 EUR
31+0.58 EUR
100+0.37 EUR
500+0.28 EUR
1000+0.25 EUR
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BAT1705WH6327XTSA1 BAT17_6-15-11.pdf
BAT1705WH6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 4V 150MW SOT323-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Diode Type: Schottky - 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT323
Part Status: Active
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
auf Bestellung 6649 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
19+0.95 EUR
31+0.58 EUR
100+0.37 EUR
500+0.28 EUR
1000+0.25 EUR
Mindestbestellmenge: 19 Stücke
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BAT1706WH6327XTSA1 fundamentals-of-power-semiconductors
BAT1706WH6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 4V 150MW SOT323-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Diode Type: Schottky - 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT323
Part Status: Obsolete
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
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BAT1804E6327HTSA1 bat18series.pdf?folderId=db3a304314dca3890114fde87a7a09ec&fileId=db3a304314dca3890114fe3a83ef0a87
BAT1804E6327HTSA1
Hersteller: Infineon Technologies
Description: RF DIODE PIN 35V PG-SOT23
Current - Reverse Leakage @ Vr: 20 nA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 35 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PG-SOT23
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Reverse Recovery Time (trr): 120 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Current - Max: 100 mA
Voltage - Peak Reverse (Max): 35V
Capacitance @ Vr, F: 1pF @ 20V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: PIN - 1 Pair Series Connection
auf Bestellung 12963 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
16+1.11 EUR
26+0.68 EUR
100+0.44 EUR
500+0.33 EUR
1000+0.3 EUR
Mindestbestellmenge: 16 Stücke
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BAT68E6327HTSA1 infineon-bat68series-ds-en.pdf
BAT68E6327HTSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 8V 150MW SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Resistance @ If, F: 10Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 8V
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
auf Bestellung 2503 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
48+0.37 EUR
71+0.25 EUR
81+0.22 EUR
100+0.19 EUR
250+0.17 EUR
500+0.16 EUR
Mindestbestellmenge: 48 Stücke
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BAT6804E6327HTSA1 bat68series.pdf?folderId=db3a304314dca389011518104e5d0df2&fileId=db3a304314dca38901151819a1ab0df5
BAT6804E6327HTSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 8V 150MW SOT23-3
Power Dissipation (Max): 150 mW
Current - Max: 130 mA
Part Status: Active
Supplier Device Package: PG-SOT23
Voltage - Peak Reverse (Max): 8V
Resistance @ If, F: 10Ohm @ 5mA, 10kHz
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: Schottky - 1 Pair Series Connection
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 17346 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
40+0.44 EUR
58+0.3 EUR
66+0.27 EUR
100+0.23 EUR
250+0.21 EUR
500+0.2 EUR
1000+0.19 EUR
Mindestbestellmenge: 40 Stücke
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BAT6804WH6327XTSA1 bat68series.pdf?folderId=db3a304314dca389011518104e5d0df2&fileId=db3a304314dca38901151819a1ab0df5
BAT6804WH6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 8V 150MW SOT323-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Diode Type: Schottky - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Resistance @ If, F: 10Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 8V
Supplier Device Package: PG-SOT323
Part Status: Active
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
auf Bestellung 12135 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
11+1.67 EUR
17+1.04 EUR
100+0.67 EUR
500+0.52 EUR
1000+0.47 EUR
Mindestbestellmenge: 11 Stücke
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BAT6806WH6327XTSA1 bat68series.pdf?folderId=db3a304314dca389011518104e5d0df2&fileId=db3a304314dca38901151819a1ab0df5
BAT6806WH6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 8V 150MW SOT323-3
Power Dissipation (Max): 150 mW
Current - Max: 130 mA
Part Status: Obsolete
Supplier Device Package: PG-SOT323
Voltage - Peak Reverse (Max): 8V
Resistance @ If, F: 10Ohm @ 5mA, 10kHz
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: Schottky - 1 Pair Common Anode
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BFP181E7764HTSA1 bfp181.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef6801142665c77b0601&location=.en.product.findProductTypeByName.html_dgdl_bfp181.pdf
BFP181E7764HTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 12V 8GHZ SOT-143-3D
Part Status: Active
Supplier Device Package: PG-SOT-143-3D
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Frequency - Transition: 8GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 70mA, 8V
Voltage - Collector Emitter Breakdown (Max): 12V
Current - Collector (Ic) (Max): 20mA
Power - Max: 175mW
Gain: 17.5dB ~ 21dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Packaging: Cut Tape (CT)
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
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BFP183WH6327XTSA1 bfp183w.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef6801142672e8cd0613
BFP183WH6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 12V 8.5GHZ SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 22dB
Power - Max: 450mW
Current - Collector (Ic) (Max): 65mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
Frequency - Transition: 8.5GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
Produkt ist nicht verfügbar
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BFP420FH6327XTSA1 Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920
BFP420FH6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 5.5V 25GHZ 4-TSFP
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 19.5dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 5.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Supplier Device Package: 4-TSFP
Part Status: Active
Produkt ist nicht verfügbar
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BFP520H6327XTSA1 Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920
BFP520H6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 3.5V 45GHZ SOT-343
Part Status: Active
Supplier Device Package: PG-SOT343-3D
Noise Figure (dB Typ @ f): 0.95dB @ 1.8GHz
Frequency - Transition: 45GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 20mA, 2V
Voltage - Collector Emitter Breakdown (Max): 3.5V
Current - Collector (Ic) (Max): 40mA
Power - Max: 100mW
Gain: 22.5dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Packaging: Cut Tape (CT)
auf Bestellung 6196 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
23+0.77 EUR
33+0.54 EUR
37+0.48 EUR
100+0.42 EUR
250+0.39 EUR
500+0.37 EUR
1000+0.36 EUR
Mindestbestellmenge: 23 Stücke
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BFP520FH6327XTSA1 Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920
BFP520FH6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 3.5V 45GHZ 4-TSFP
Part Status: Active
Packaging: Cut Tape (CT)
Supplier Device Package: 4-TSFP
Noise Figure (dB Typ @ f): 0.95dB @ 1.8GHz
Frequency - Transition: 45GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 20mA, 2V
Voltage - Collector Emitter Breakdown (Max): 3.5V
Current - Collector (Ic) (Max): 40mA
Power - Max: 100mW
Gain: 22.5dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Produkt ist nicht verfügbar
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BFP620FH7764XTSA1 Infineon-BFP620F-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f03a08d3926
BFP620FH7764XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 2.8V 65GHZ 4-TSFP
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21dB ~ 10dB
Power - Max: 185mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 2.8V
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 50mA, 1.5V
Frequency - Transition: 65GHz
Noise Figure (dB Typ @ f): 0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz
Supplier Device Package: 4-TSFP
Part Status: Active
Produkt ist nicht verfügbar
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BFP640FH6327XTSA1 Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920
BFP640FH6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 4.5V 40GHZ 4-TSFP
Part Status: Active
Supplier Device Package: 4-TSFP
Noise Figure (dB Typ @ f): 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
Frequency - Transition: 40GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V
Voltage - Collector Emitter Breakdown (Max): 4.5V
Current - Collector (Ic) (Max): 50mA
Power - Max: 200mW
Gain: 23dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 4427 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
28+0.65 EUR
40+0.45 EUR
45+0.4 EUR
100+0.35 EUR
250+0.32 EUR
500+0.3 EUR
1000+0.29 EUR
Mindestbestellmenge: 28 Stücke
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BFP650FH6327XTSA1 Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920
BFP650FH6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 4.5V 42GHZ 4-TSFP
Part Status: Active
Supplier Device Package: 4-TSFP
Noise Figure (dB Typ @ f): 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz
Frequency - Transition: 42GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 80mA, 3V
Voltage - Collector Emitter Breakdown (Max): 4.5V
Current - Collector (Ic) (Max): 150mA
Power - Max: 500mW
Gain: 11dB ~ 21.5dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 17172 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
24+0.74 EUR
34+0.52 EUR
38+0.46 EUR
100+0.4 EUR
250+0.37 EUR
500+0.36 EUR
1000+0.34 EUR
Mindestbestellmenge: 24 Stücke
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BFR181WH6327XTSA1 bfr181w.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef680114268dc6c1063f
BFR181WH6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 12V 8GHZ PG-SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 19dB
Power - Max: 175mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT323
Part Status: Active
auf Bestellung 58008 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
32+0.56 EUR
47+0.38 EUR
52+0.34 EUR
100+0.29 EUR
250+0.27 EUR
500+0.25 EUR
1000+0.24 EUR
Mindestbestellmenge: 32 Stücke
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BFR193L3E6327XTMA1 bfr193l3.pdf?folderId=db3a30431400ef68011425b2dfaf05c6&fileId=db3a30431400ef680114271fc1ec06db
BFR193L3E6327XTMA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 12V 8GHZ TSLP-3-1
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12.5dB ~ 19dB
Power - Max: 580mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-TSLP-3-1
Part Status: Active
auf Bestellung 7863 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
39+0.46 EUR
55+0.32 EUR
62+0.29 EUR
100+0.25 EUR
250+0.23 EUR
500+0.21 EUR
2500+0.2 EUR
Mindestbestellmenge: 39 Stücke
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BFR193WH6327XTSA1 infineon-bfr193w-ds-en.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef68011426b3b6650674
BFR193WH6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 12V 8GHZ PG-SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10.5dB ~ 16dB
Power - Max: 580mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT323
Part Status: Active
auf Bestellung 18202 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
32+0.56 EUR
47+0.38 EUR
52+0.34 EUR
100+0.29 EUR
250+0.27 EUR
500+0.25 EUR
1000+0.24 EUR
Mindestbestellmenge: 32 Stücke
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BFR340FH6327XTSA1 Infineon-BFR340F-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f03e34d3934
BFR340FH6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 9V 14GHZ PG-TSFP-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 5mA, 3V
Voltage - Collector Emitter Breakdown (Max): 9V
Current - Collector (Ic) (Max): 20mA
Power - Max: 75mW
Gain: 13dB ~ 28dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: PG-TSFP-3
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 100MHz ~ 2.4GHz
Frequency - Transition: 14GHz
auf Bestellung 107 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
48+0.37 EUR
69+0.26 EUR
78+0.23 EUR
100+0.19 EUR
Mindestbestellmenge: 48 Stücke
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BFR460L3E6327XTMA1 Infineon-BFR460L3-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f04152e393e
BFR460L3E6327XTMA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 5.8V 22GHZ TSLP-3-1
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 16dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 5.8V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 3V
Frequency - Transition: 22GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 1.35dB @ 1.8GHz ~ 3GHz
Supplier Device Package: PG-TSLP-3-1
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BFR93AWH6327XTSA1 Infineon-BFR93AW-DS-v01_01-en.pdf?fileId=db3a30431441fb5d0114acaaec8c148f
BFR93AWH6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 12V 6GHZ PG-SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10.5dB ~ 15.5dB
Power - Max: 300mW
Current - Collector (Ic) (Max): 90mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Frequency - Transition: 6GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT323
Part Status: Active
auf Bestellung 46346 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
32+0.56 EUR
47+0.38 EUR
52+0.34 EUR
100+0.29 EUR
250+0.27 EUR
500+0.25 EUR
1000+0.24 EUR
Mindestbestellmenge: 32 Stücke
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BFS481H6327XTSA1 infineon-bfs481-ds-en.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef680114270d383406be
BFS481H6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS 2 NPN 12V 8GHZ SOT363-6
Packaging: Cut Tape (CT)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Gain: 20dB
Power - Max: 175mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT363-PO
Part Status: Active
auf Bestellung 6381 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
18+1.02 EUR
25+0.73 EUR
28+0.65 EUR
100+0.56 EUR
250+0.53 EUR
500+0.5 EUR
1000+0.48 EUR
Mindestbestellmenge: 18 Stücke
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BFS483H6327XTSA1 bfs483.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef6801142710876006c5
BFS483H6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS 2 NPN 12V 8GHZ SOT363-6
Part Status: Active
Supplier Device Package: PG-SOT363-PO
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
Frequency - Transition: 8GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
Voltage - Collector Emitter Breakdown (Max): 12V
Current - Collector (Ic) (Max): 65mA
Power - Max: 450mW
Gain: 19dB
Operating Temperature: 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 8175 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
21+0.86 EUR
30+0.6 EUR
33+0.54 EUR
100+0.47 EUR
250+0.44 EUR
500+0.42 EUR
1000+0.4 EUR
Mindestbestellmenge: 21 Stücke
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BGA231L7E6327XTSA1 BGA231L7.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30432f69f146012f78199f332d8d
BGA231L7E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF AMP GPS 1575.42MHZ TSLP7-1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BGA420H6327XTSA1 bga420.pdf?folderId=db3a30431441fb5d0114b654e6581730&fileId=db3a304314dca3890115418cec781637
BGA420H6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF AMP GPS 0HZ-3GHZ SOT343-3D
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 0Hz ~ 3GHz
RF Type: General Purpose
Voltage - Supply: 3V ~ 6V
Gain: 13dB
Current - Supply: 6.7mA
Noise Figure: 2.3dB
P1dB: -2.5dBm
Test Frequency: 1GHz
Supplier Device Package: PG-SOT343-3D
auf Bestellung 8447 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
14+1.34 EUR
16+1.15 EUR
25+1.08 EUR
100+0.99 EUR
250+0.94 EUR
500+0.9 EUR
1000+0.86 EUR
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BGA713L7E6327XTSA1 BGA713L7.pdf
BGA713L7E6327XTSA1
Hersteller: Infineon Technologies
Description: IC AMP UMTS 728MHZ-768MHZ TSLP7
Produkt ist nicht verfügbar
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BGA736L16E6327XTSA1 BGA736L16.pdf
BGA736L16E6327XTSA1
Hersteller: Infineon Technologies
Description: IC AMP W-CDMA 800/900MHZ TSLP16
Mounting Type: Surface Mount
Package / Case: 16-XFQFN Exposed Pad
Packaging: Cut Tape (CT)
Supplier Device Package: TSLP-16-1
Test Frequency: 1.9GHz
P1dB: -11dBm
Noise Figure: 7.8dB
Current - Supply: 5.3mA
Gain: 16.1dB
Voltage - Supply: 2.7V ~ 3V
RF Type: W-CDMA, HSPDA
Frequency: 800MHz, 900MHz, 1.8GHz, 1.9GHz, 2.1GHz
auf Bestellung 7490 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4+5.12 EUR
10+4.43 EUR
25+4.19 EUR
100+3.85 EUR
250+3.65 EUR
500+3.51 EUR
1000+3.37 EUR
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BGM 1032N7 E6327 bgm1032n7_final_30.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433072cd8f013073f4f2210025
BGM 1032N7 E6327
Hersteller: Infineon Technologies
Description: MODULE GPS FRONT-END TSNP-7-10
auf Bestellung 9143 Stücke:
Lieferzeit 10-14 Tag (e)
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BGM 1033N7 E6327 bgm1033n7_final_30.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433072cd8f013073f6f5670029
BGM 1033N7 E6327
Hersteller: Infineon Technologies
Description: MODULE GPS FRONT-END TSNP-7-10
auf Bestellung 11366 Stücke:
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ESD5V0L1B-02V H6327 ESD5V0L1B-02V.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30432d081e66012d563aa234296a
ESD5V0L1B-02V H6327
Hersteller: Infineon Technologies
Description: TVS DIODE 5VWM 25VC SC79-2-1
auf Bestellung 4617 Stücke:
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ESD5V0S5USH6327XTSA1 esd5v0sxus.pdf?folderId=db3a30431441fb5d0114883802cf0d02&fileId=db3a30431441fb5d0114883be5d40d04
ESD5V0S5USH6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 5VWM 13VC SOT363
Produkt ist nicht verfügbar
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ESD5V3U2U03FH6327XTSA1 esd5v3u2useries.pdf?folderId=db3a30431441fb5d011488a9e66f0ded&fileId=db3a30431b0626df011b0d3e3ca97dc0
ESD5V3U2U03FH6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 5.3VWM 15VC PGTSFP3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: PG-TSFP-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 15V
Power Line Protection: No
Part Status: Active
auf Bestellung 28232 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
15+1.2 EUR
24+0.74 EUR
100+0.48 EUR
500+0.36 EUR
1000+0.33 EUR
Mindestbestellmenge: 15 Stücke
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ESD8V0R1B02ELE6327XTMA1 ESD8V0R1B_Series.pdf
ESD8V0R1B02ELE6327XTMA1
Hersteller: Infineon Technologies
Description: TVS DIODE 14VWM 28VC TSLP-2-18
Package / Case: SOD-882
Packaging: Cut Tape (CT)
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 28V
Voltage - Breakdown (Min): 8.5V
Bidirectional Channels: 1
Supplier Device Package: PG-TSLP-2-18
Voltage - Reverse Standoff (Typ): 14V (Max)
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Capacitance @ Frequency: 4pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
auf Bestellung 1 Stücke:
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BGM 1032N7 E6327 bgm1032n7_final_30.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433072cd8f013073f4f2210025
BGM 1032N7 E6327
Hersteller: Infineon Technologies
Description: MODULE GPS FRONT-END TSNP-7-10
auf Bestellung 9143 Stücke:
Lieferzeit 10-14 Tag (e)
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BGM 1033N7 E6327 bgm1033n7_final_30.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433072cd8f013073f6f5670029
BGM 1033N7 E6327
Hersteller: Infineon Technologies
Description: MODULE GPS FRONT-END TSNP-7-10
auf Bestellung 11366 Stücke:
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ESD5V0L1B-02V H6327 ESD5V0L1B-02V.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30432d081e66012d563aa234296a
ESD5V0L1B-02V H6327
Hersteller: Infineon Technologies
Description: TVS DIODE 5VWM 25VC SC79-2-1
auf Bestellung 4617 Stücke:
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CY8C5467AXI-LP108 download
CY8C5467AXI-LP108
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 100TQFP
Number of I/O: 62
Part Status: Active
Supplier Device Package: 100-TQFP (14x14)
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Connectivity: I2C, LINbus, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 1x12b; D/A 2x8b
Core Processor: ARM® Cortex®-M3
EEPROM Size: 2K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 32K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 67MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
auf Bestellung 966 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+20.5 EUR
10+16.16 EUR
90+13.95 EUR
180+13.49 EUR
270+13.26 EUR
540+12.93 EUR
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CY8C5667AXI-LP006 download
CY8C5667AXI-LP006
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 100TQFP
Part Status: Active
Supplier Device Package: 100-TQFP (14x14)
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Connectivity: I2C, LINbus, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 2x12b; D/A 4x8b
Core Processor: ARM® Cortex®-M3
EEPROM Size: 2K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
DigiKey Programmable: Not Verified
Number of I/O: 62
RAM Size: 32K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 67MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
auf Bestellung 176 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+32.16 EUR
10+25.63 EUR
25+24 EUR
90+22.32 EUR
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TLE42744GV50ATMA1 Infineon-TLE42744G%20V50-DataSheet-v01_40-EN.pdf?fileId=8ac78c8c93dda25b019519be53597418
TLE42744GV50ATMA1
Hersteller: Infineon Technologies
Description: IC REG LIN 5V 400MA PG-TO263-3-1
Packaging: Cut Tape (CT)
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-3-1
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Qualification: AEC-Q100
auf Bestellung 1235 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
7+2.82 EUR
10+2.06 EUR
25+1.88 EUR
100+1.67 EUR
250+1.58 EUR
500+1.52 EUR
Mindestbestellmenge: 7 Stücke
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TLE42764DV50ATMA1 Infineon-TLE42764-DS-v01_30-EN.pdf?fileId=5546d46258fc0bc101595f8e8c751fa3
TLE42764DV50ATMA1
Hersteller: Infineon Technologies
Description: IC REG LIN 5V 400MA PG-TO252-5
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-5
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Grade: Automotive
Part Status: Active
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 25 mA
Qualification: AEC-Q100
auf Bestellung 12335 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
6+3.24 EUR
10+2.39 EUR
25+2.17 EUR
100+1.94 EUR
250+1.83 EUR
500+1.76 EUR
1000+1.7 EUR
Mindestbestellmenge: 6 Stücke
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TLE42764GV50ATMA1 Infineon-TLE42764-DS-v01_30-EN.pdf?fileId=5546d46258fc0bc101595f8e8c751fa3
TLE42764GV50ATMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR 5V 400MA TO263-5
Current - Supply (Max): 25 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.5V @ 250mA
PSRR: 54dB (100Hz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: TO-263-5
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 220 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 400mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
auf Bestellung 1719 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5+3.57 EUR
10+2.65 EUR
25+2.42 EUR
100+2.16 EUR
250+2.04 EUR
500+1.97 EUR
Mindestbestellmenge: 5 Stücke
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