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S29JL032J70TFI020 S29JL032J70TFI020 Infineon Technologies Infineon-S29JL032J_32_Mb_(4M_X_8_BIT_2M_X_16_BIT)_3_V_SIMULTANEOUS_READ_WRITE_FLASH-AdditionalTechnicalInformation-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed71e7d5831&utm_source=cypress&utm_medium=referral&utm_campaign=2021 Description: IC FLASH 32MBIT PARALLEL 48TSOP
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 4M x 8, 2M x 16
DigiKey Programmable: Not Verified
auf Bestellung 582 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.13 EUR
10+6.63 EUR
25+6.44 EUR
96+6.14 EUR
192+6 EUR
288+5.91 EUR
576+5.76 EUR
Mindestbestellmenge: 3
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S29JL032J70TFI310 S29JL032J70TFI310 Infineon Technologies Infineon-S29JL032J_32_Mb_(4M_X_8_BIT_2M_X_16_BIT)_3_V_SIMULTANEOUS_READ_WRITE_FLASH-AdditionalTechnicalInformation-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed71e7d5831&utm_source=cypress&utm_medium=referral&utm_campaign=2021 Description: IC FLASH 32MBIT PARALLEL 48TSOP
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 4M x 8, 2M x 16
DigiKey Programmable: Verified
auf Bestellung 6423 Stücke:
Lieferzeit 10-14 Tag (e)
3+5.88 EUR
10+5.47 EUR
25+5.31 EUR
96+5.07 EUR
192+4.95 EUR
288+4.88 EUR
576+4.75 EUR
1056+4.65 EUR
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S29JL032J70TFI320 S29JL032J70TFI320 Infineon Technologies Infineon-S29JL032J_32_Mb_(4M_X_8_BIT_2M_X_16_BIT)_3_V_SIMULTANEOUS_READ_WRITE_FLASH-AdditionalTechnicalInformation-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed71e7d5831&utm_source=cypress&utm_medium=referral&utm_campaign=2021 Description: IC FLASH 32MBIT PARALLEL 48TSOP
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 4M x 8, 2M x 16
DigiKey Programmable: Not Verified
auf Bestellung 473 Stücke:
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3+7.13 EUR
10+6.63 EUR
25+6.44 EUR
96+6.14 EUR
192+6 EUR
288+5.91 EUR
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S29JL032J70TFI410 S29JL032J70TFI410 Infineon Technologies Infineon-S29JL032J_32_Mb_(4M_X_8_BIT_2M_X_16_BIT)_3_V_SIMULTANEOUS_READ_WRITE_FLASH-AdditionalTechnicalInformation-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed71e7d5831&utm_source=cypress&utm_medium=referral&utm_campaign=2021 Description: IC FLASH 32MBIT PARALLEL 48TSOP
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 4M x 8, 2M x 16
DigiKey Programmable: Verified
auf Bestellung 676 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.13 EUR
10+6.63 EUR
25+6.44 EUR
96+6.14 EUR
192+6 EUR
288+5.91 EUR
576+5.76 EUR
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S29JL032J70TFI420 S29JL032J70TFI420 Infineon Technologies Infineon-S29JL032J_32_Mb_(4M_X_8_BIT_2M_X_16_BIT)_3_V_SIMULTANEOUS_READ_WRITE_FLASH-AdditionalTechnicalInformation-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed71e7d5831&utm_source=cypress&utm_medium=referral&utm_campaign=2021 Description: IC FLASH 32MBIT PARALLEL 48TSOP
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 4M x 8, 2M x 16
DigiKey Programmable: Verified
auf Bestellung 902 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.13 EUR
10+6.63 EUR
25+6.44 EUR
96+6.14 EUR
192+6 EUR
288+5.91 EUR
576+5.76 EUR
Mindestbestellmenge: 3
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S29JL064J60TFI000 S29JL064J60TFI000 Infineon Technologies Infineon-S29JL064J_64_Mb_(8M_x_8_Bit_4M_x_16_Bit)_3_V_Simultaneous_Read_Write_Flash-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6688c56c7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Description: IC FLASH 64MBIT PARALLEL 48TSOP
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 60 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Verified
auf Bestellung 436 Stücke:
Lieferzeit 10-14 Tag (e)
2+13.09 EUR
10+12.05 EUR
25+11.79 EUR
40+11.75 EUR
96+10.55 EUR
288+10.23 EUR
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S29JL064J70TFI000 S29JL064J70TFI000 Infineon Technologies Infineon-S29JL064J_64_Mb_(8M_x_8_Bit_4M_x_16_Bit)_3_V_Simultaneous_Read_Write_Flash-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6688c56c7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Description: IC FLASH 64MBIT PARALLEL 48TSOP
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Verified
auf Bestellung 2188 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.86 EUR
10+11.04 EUR
25+10.7 EUR
96+10.21 EUR
192+9.96 EUR
288+9.81 EUR
576+9.57 EUR
1056+9.35 EUR
Mindestbestellmenge: 2
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S29PL032J70BAI120 S29PL032J70BAI120 Infineon Technologies Infineon-S29PL-J_128-_128-_64-_32-MBIT_(8_8_4_2M_X_16_BIT)_3_V_FLASH_WITH_ENHANCED_VERSATILEIO-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5806154f0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_e Description: IC FLASH 32MBIT PARALLEL 48FBGA
Produkt ist nicht verfügbar
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S29PL064J70BFW120 S29PL064J70BFW120 Infineon Technologies Infineon-S29PL-J_128-_128-_64-_32-MBIT_(8_8_4_2M_X_16_BIT)_3_V_FLASH_WITH_ENHANCED_VERSATILEIO-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5806154f0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_e Description: IC FLASH 64MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -25°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-FBGA (8.15x6.15)
Part Status: Obsolete
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 4M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S29PL064J70BFW122 S29PL064J70BFW122 Infineon Technologies Infineon-S29PL-J_128-_128-_64-_32-MBIT_(8_8_4_2M_X_16_BIT)_3_V_FLASH_WITH_ENHANCED_VERSATILEIO-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5806154f0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_e Description: IC FLASH 64MBIT PARALLEL 48FBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -25°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-FBGA (8.15x6.15)
Part Status: Obsolete
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 4M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8C3666LTI-203 CY8C3666LTI-203 Infineon Technologies #!?fileId=8ac78c8c7d0d8da4017d0ec73d263e88 Description: IC MCU 8BIT 64KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 8051
Data Converters: A/D 16x12b; D/A 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 38
DigiKey Programmable: Not Verified
auf Bestellung 1300 Stücke:
Lieferzeit 10-14 Tag (e)
1+24.08 EUR
10+22.12 EUR
25+21.21 EUR
80+18.69 EUR
260+17.77 EUR
520+16.62 EUR
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CY8C3665LTI-199 CY8C3665LTI-199 Infineon Technologies #!?fileId=8ac78c8c7d0d8da4017d0ec73d263e88 Description: IC MCU 8BIT 32KB FLASH 68QFN
Produkt ist nicht verfügbar
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CY8C3666LTI-201 CY8C3666LTI-201 Infineon Technologies #!?fileId=8ac78c8c7d0d8da4017d0ec73d263e88 Description: IC MCU 8BIT 64KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 8051
Data Converters: A/D 16x12b; D/A 2x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 38
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8CKIT-003B CY8CKIT-003B Infineon Technologies CY8CKIT-003_QSG.pdf Description: CY8C3866AXI EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 8-Bit
Contents: Board(s), Cable(s), Accessories
Core Processor: 8051
Board Type: Evaluation Platform
Utilized IC / Part: CY8C3866AXI
Part Status: Obsolete
Produkt ist nicht verfügbar
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CY8CKIT-001C CY8CKIT-001C Infineon Technologies Infineon-PSoC_5LP_CY8C58LP_Family_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec547013ab9 Description: CY8C28/CY8C38/CY8C58LP EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 8-Bit
Contents: Board(s), Cable(s), LCD, Power Supply, Accessories
Core Processor: M8C
Board Type: Evaluation Platform
Utilized IC / Part: CY8C28, CY8C38, CY8C58LP
Part Status: Obsolete
Produkt ist nicht verfügbar
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IRFH3702TRPBF IRFH3702TRPBF Infineon Technologies irfh3702pbf.pdf?fileId=5546d462533600a40153561a25871e76 Description: MOSFET N-CH 30V 16A/42A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 16A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-PQFN (3x3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 15 V
auf Bestellung 1343 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.58 EUR
18+0.99 EUR
100+0.64 EUR
500+0.5 EUR
1000+0.45 EUR
Mindestbestellmenge: 12
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IRFH5250TRPBF IRFH5250TRPBF Infineon Technologies irfh5250pbf.pdf?fileId=5546d462533600a40153561b2c791eb8 Description: MOSFET N-CH 25V 45A/100A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7174 pF @ 13 V
auf Bestellung 8952 Stücke:
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6+3.4 EUR
10+2.17 EUR
100+1.48 EUR
500+1.18 EUR
1000+1.14 EUR
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IRFH5302TRPBF IRFH5302TRPBF Infineon Technologies irfh5302pbf.pdf?fileId=5546d462533600a40153561b58dc1ec3 Description: MOSFET N-CH 30V 32A/100A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: PQFN (5x6) Single Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 15 V
auf Bestellung 819 Stücke:
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7+2.75 EUR
15+1.18 EUR
100+0.9 EUR
500+0.86 EUR
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IRLHS6342TRPBF IRLHS6342TRPBF Infineon Technologies irlhs6342pbf.pdf?fileId=5546d462533600a401535663b52625ad Description: MOSFET N-CH 30V 8.7A/19A 6PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 19A (Tc)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 8.5A, 4.5V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: 6-PQFN (2x2)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1019 pF @ 25 V
auf Bestellung 129316 Stücke:
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26+0.69 EUR
31+0.58 EUR
100+0.41 EUR
500+0.34 EUR
1000+0.32 EUR
Mindestbestellmenge: 26
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IRLHS6376TRPBF IRLHS6376TRPBF Infineon Technologies infineon-irlhs6376-datasheet-en.pdf Description: MOSFET 2N-CH 30V 3.6A PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V
Rds On (Max) @ Id, Vgs: 63mOhm @ 3.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: 6-PQFN Dual (2x2)
Part Status: Active
auf Bestellung 12107 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.27 EUR
23+0.79 EUR
100+0.51 EUR
500+0.39 EUR
1000+0.35 EUR
2000+0.32 EUR
Mindestbestellmenge: 14
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IRFHM9331TRPBF IRFHM9331TRPBF Infineon Technologies irfhm9331pbf.pdf?fileId=5546d462533600a4015356237f7e1f59 Description: MOSFET P-CH 30V 11A/24A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 11A, 20V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Supplier Device Package: PQFN (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V, 20V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1543 pF @ 25 V
auf Bestellung 13012 Stücke:
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13+1.39 EUR
20+0.89 EUR
100+0.62 EUR
500+0.48 EUR
1000+0.43 EUR
2000+0.39 EUR
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IRFH5206TRPBF IRFH5206TRPBF Infineon Technologies irfh5206pbf.pdf?fileId=5546d462533600a40153561afcd01eac Description: MOSFET N-CH 60V 16A/89A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 89A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2490 pF @ 25 V
Produkt ist nicht verfügbar
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IRFH6200TRPBF IRFH6200TRPBF Infineon Technologies irfh6200pbf.pdf?fileId=5546d462533600a40153561e9b131ed0 Description: MOSFET N-CH 20V 49A/100A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.95mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 10890 pF @ 10 V
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CY14B101J2-SXI CY14B101J2-SXI Infineon Technologies Infineon-CY14C101I_CY14B101I_CY14E101I_1-Mbit_(128_K_8)_Serial_(I2C)_nvSRAM_with_Real_Time_Clock-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebfe05a3466 Description: IC NVSRAM 1MBIT I2C 3.4MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 3.4 MHz
Memory Format: NVSRAM
Supplier Device Package: 8-SOIC
Memory Interface: I2C
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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IR4312MTRPBF IR4312MTRPBF Infineon Technologies ir4302.pdf?fileId=5546d462533600a4015355d602a9181d Description: IC AMP CLASS D STEREO 35W 44QFN
Features: Depop, Differential Inputs
Packaging: Cut Tape (CT)
Package / Case: 44-PowerVFQFN
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 100°C (TA)
Voltage - Supply: 10V ~ 15V
Max Output Power x Channels @ Load: 35W x 2 @ 4Ohm
Supplier Device Package: 44-PQFN (7x7)
Part Status: Obsolete
Produkt ist nicht verfügbar
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IR4312MTRPBF IR4312MTRPBF Infineon Technologies ir4302.pdf?fileId=5546d462533600a4015355d602a9181d Description: IC AMP CLASS D STEREO 35W 44QFN
Features: Depop, Differential Inputs
Packaging: Tape & Reel (TR)
Package / Case: 44-PowerVFQFN
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 100°C (TA)
Voltage - Supply: 10V ~ 15V
Max Output Power x Channels @ Load: 35W x 2 @ 4Ohm
Supplier Device Package: 44-PQFN (7x7)
Part Status: Obsolete
Produkt ist nicht verfügbar
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IRAUDAMP18 IRAUDAMP18 Infineon Technologies iraudamp18.pdf_fileid=5546d462533600a40153569a96eb2be9.pdf Description: BOARD EVAL FOR IR4312
Packaging: Bulk
Output Type: 2-Channel (Stereo)
Amplifier Type: Class D
Voltage - Supply: 18V ~ 31V
Max Output Power x Channels @ Load: 35W x 2 @ 4Ohm
Board Type: Fully Populated
Utilized IC / Part: IR4312
Supplied Contents: Board(s)
Part Status: Active
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IRAUDAMP15 IRAUDAMP15 Infineon Technologies iraudamp15.pdf?fileId=5546d462533600a4015356973e6e2bdf Description: EVAL BOARD FOR IR4311
Packaging: Bulk
Output Type: 2-Channel (Stereo)
Amplifier Type: Class D
Contents: Board(s)
Voltage - Supply: 18V ~ 31V
Max Output Power x Channels @ Load: 35W x 2 @ 4Ohm
Board Type: Fully Populated
Utilized IC / Part: IR4311
Supplied Contents: Board(s)
Part Status: Active
Produkt ist nicht verfügbar
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IRGP4640D-EPBF IRGP4640D-EPBF Infineon Technologies IRGx4640D%28-E%29PbF.pdf Description: IGBT 600V 65A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 89 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 41ns/104ns
Switching Energy: 115µJ (on), 600µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 75 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 72 A
Power - Max: 250 W
Produkt ist nicht verfügbar
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IRGP4650DPBF IRGP4650DPBF Infineon Technologies IRSD-S-A0000175678-1.pdf?t.download=true&u=5oefqw Description: IGBT 600V 76A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 120 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 35A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 46ns/105ns
Switching Energy: 390µJ (on), 632µJ (off)
Test Condition: 400V, 35A, 10Ohm, 15V
Gate Charge: 104 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 76 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 268 W
Produkt ist nicht verfügbar
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IRGP4640DPBF IRGP4640DPBF Infineon Technologies IRGx4640D%28-E%29PbF.pdf Description: IGBT 600V 65A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 89 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 41ns/104ns
Switching Energy: 115µJ (on), 600µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 75 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 72 A
Power - Max: 250 W
Produkt ist nicht verfügbar
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IRFR220NTRLPBF IRFR220NTRLPBF Infineon Technologies irfr220npbf.pdf?fileId=5546d462533600a40153562d8a7b206f Description: MOSFET N-CH 200V 5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.9A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
Produkt ist nicht verfügbar
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IRFR3910TRLPBF IRFR3910TRLPBF Infineon Technologies irfr3910pbf.pdf?fileId=5546d462533600a401535631f05d20df Description: MOSFET N-CH 100V 16A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 10A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
Produkt ist nicht verfügbar
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IRLR2905TRLPBF IRLR2905TRLPBF Infineon Technologies irlr2905pbf.pdf?fileId=5546d462533600a40153566cc2bb2679 Description: MOSFET N-CH 55V 42A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Produkt ist nicht verfügbar
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IRLR3410TRLPBF IRLR3410TRLPBF Infineon Technologies irlr3410pbf.pdf?fileId=5546d462533600a40153566d14c52695 Description: MOSFET N-CH 100V 17A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
auf Bestellung 33824 Stücke:
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IR2520DSTRPBF IR2520DSTRPBF Infineon Technologies ir2520d.pdf?fileId=5546d462533600a4015355c9af7e16e4 Description: IC BALLAST CNTRL 86KHZ 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 34kHz ~ 86kHz
Type: Ballast Controller
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 11.4V ~ 15.4V
Supplier Device Package: 8-SOIC
Dimming: No
Part Status: Not For New Designs
Current - Supply: 10 mA
Produkt ist nicht verfügbar
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IR2184STRPBF IR2184STRPBF Infineon Technologies ir2184.pdf?fileId=5546d462533600a4015355c955e616d4 Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 5474 Stücke:
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IRFR6215TRLPBF IRFR6215TRLPBF Infineon Technologies irfr6215pbf.pdf?fileId=5546d462533600a40153563595592114 Description: MOSFET P-CH 150V 13A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 295mOhm @ 6.6A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
auf Bestellung 1137 Stücke:
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IR2010STRPBF IR2010STRPBF Infineon Technologies ir2010.pdf?fileId=5546d462533600a4015355c48f901660 Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 10ns, 15ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 3A, 3A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 3964 Stücke:
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IR11672ASTRPBF IR11672ASTRPBF Infineon Technologies ir11672aspbf.pdf?fileId=5546d462533600a4015355c455561653 Description: IC REC SMART CONTROL 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Voltage - Input: 200V
Operating Temperature: -25°C ~ 125°C (TJ)
Voltage - Supply: 11.4V ~ 18V
Applications: Secondary-Side Controller
Supplier Device Package: 8-SOIC
Part Status: Active
Current - Supply: 50 mA
DigiKey Programmable: Not Verified
auf Bestellung 5000 Stücke:
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IRLR2908TRPBF IRLR2908TRPBF Infineon Technologies irlr2908pbf.pdf?fileId=5546d462533600a40153566cdace2681 Description: MOSFET N-CH 80V 30A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 23A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V
auf Bestellung 4072 Stücke:
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IRS2153DSTRPBF IRS2153DSTRPBF Infineon Technologies IRSDS08244-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.4V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 120ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 180mA, 260mA
Part Status: Active
DigiKey Programmable: Not Verified
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IR21094STRPBF IR21094STRPBF Infineon Technologies ir2109.pdf?fileId=5546d462533600a4015355c7e85b1679 Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 15114 Stücke:
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IR3856MTRPBF IR3856MTRPBF Infineon Technologies ir3856m.pdf?fileId=5546d462533600a4015355d5818517f8 Description: IC REG BUCK ADJ 6A 17PQFN
Packaging: Cut Tape (CT)
Package / Case: 17-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 6A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 225kHz ~ 1.65MHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: 17-PQFN (4x5)
Synchronous Rectifier: Yes
Voltage - Output (Max): 18.9V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.7V
Produkt ist nicht verfügbar
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IRLHS6242TRPBF IRLHS6242TRPBF Infineon Technologies irlhs6242pbf.pdf?fileId=5546d462533600a401535663a52d25a9 Description: MOSFET N-CH 20V 10A/12A 6PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 8.5A, 4.5V
Power Dissipation (Max): 1.98W (Ta), 9.6W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: 6-PQFN (2x2) (DFN2020)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 10 V
auf Bestellung 80512 Stücke:
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20+0.9 EUR
36+0.49 EUR
100+0.29 EUR
500+0.28 EUR
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IRS2304STRPBF IRS2304STRPBF Infineon Technologies irs2304spbf.pdf?fileId=5546d462533600a40153567a8fe72802 Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.7V, 2.3V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 4891 Stücke:
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16+1.16 EUR
25+1.05 EUR
100+0.93 EUR
250+0.87 EUR
500+0.83 EUR
1000+0.8 EUR
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IRFH5300TRPBF IRFH5300TRPBF Infineon Technologies irfh5300pbf.pdf?fileId=5546d462533600a40153561b3e141ebc Description: MOSFET N-CH 30V 40A/100A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 15 V
auf Bestellung 3548 Stücke:
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500+1 EUR
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IRF9389TRPBF IRF9389TRPBF Infineon Technologies irf9389pbf.pdf?fileId=5546d462533600a40153561178901daf Description: MOSFET N/P-CH 30V 6.8A/4.6A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.8A, 4.6A
Input Capacitance (Ciss) (Max) @ Vds: 398pF @ 15V
Rds On (Max) @ Id, Vgs: 27mOhm @ 6.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.3V @ 10µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 28000 Stücke:
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4000+0.26 EUR
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IRF9389TRPBF IRF9389TRPBF Infineon Technologies irf9389pbf.pdf?fileId=5546d462533600a40153561178901daf Description: MOSFET N/P-CH 30V 6.8A/4.6A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.8A, 4.6A
Input Capacitance (Ciss) (Max) @ Vds: 398pF @ 15V
Rds On (Max) @ Id, Vgs: 27mOhm @ 6.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.3V @ 10µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 31174 Stücke:
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16+1.16 EUR
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BFP840ESDH6327XTSA1 BFP840ESDH6327XTSA1 Infineon Technologies Infineon-BFP840ESD-DS-v02_00-EN.pdf?fileId=5546d46265f064ff01663896bcab4eb6 Description: RF TRANS NPN 2.25V 80GHZ SOT-343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 18.5dB
Power - Max: 75mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 2.25V
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 1.8V
Frequency - Transition: 80GHz
Noise Figure (dB Typ @ f): 0.85dB @ 5.5GHz
Supplier Device Package: PG-SOT343-4-2
Produkt ist nicht verfügbar
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BFP840FESDH6327XTSA1 BFP840FESDH6327XTSA1 Infineon Technologies Infineon-BFP840FESD-DS-v02_00-EN.pdf?fileId=5546d46265f064ff01663896c6294eb9 Description: RF TRANS NPN 2.6V 85GHZ 4TSFP
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 35dB
Power - Max: 75mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 2.6V
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 1.8V
Frequency - Transition: 85GHz
Noise Figure (dB Typ @ f): 0.75dB @ 5.5GHz
Supplier Device Package: PG-TSFP-4-1
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.28 EUR
6000+0.27 EUR
Mindestbestellmenge: 3000
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BFP842ESDH6327XTSA1 BFP842ESDH6327XTSA1 Infineon Technologies Infineon-BFP842ESD-DS-v02_00-EN.pdf?fileId=5546d46265f064ff01663896cf294ebc Description: RF TRANS NPN 3.7V 60GHZ SOT-343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 26dB
Power - Max: 120mW
Current - Collector (Ic) (Max): 40mA
Voltage - Collector Emitter Breakdown (Max): 3.7V
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 15mA, 2.5V
Frequency - Transition: 60GHz
Noise Figure (dB Typ @ f): 0.65dB @ 3.5GHz
Supplier Device Package: PG-SOT343-4-2
Part Status: Active
auf Bestellung 3000 Stücke:
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3000+0.28 EUR
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BGA 712L16 E6327 BGA 712L16 E6327 Infineon Technologies fundamentals-of-power-semiconductors Description: IC RF AMP MMIC RF LNA TSLP-16
Packaging: Tape & Reel (TR)
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
7500+1.21 EUR
Mindestbestellmenge: 7500
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BGA725L6E6327FTSA1 BGA725L6E6327FTSA1 Infineon Technologies BGA725L6_V2+0.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433784a0400137ef9a4d341f23 Description: IC AMP GPS 1.55-1.615GHZ TSLP6-2
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: GPS/GNSS
Voltage - Supply: 1.5V ~ 3.6V
Gain: 20dB
Current - Supply: 3.6mA
Noise Figure: 0.65dB
P1dB: -16dBm
Supplier Device Package: TSLP-6-2
Part Status: Active
Produkt ist nicht verfügbar
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BGA749N16E6327XTSA1 BGA749N16E6327XTSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IC RF AMP GPS 940MHZ TSNP7-1
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 940MHz
RF Type: General Purpose
Voltage - Supply: 3.6V
Gain: 16.1dB
Current - Supply: 10mA
Noise Figure: 1.2dB
Supplier Device Package: PG-TSNP-7-1
Produkt ist nicht verfügbar
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BGA 925L6 E6327 BGA 925L6 E6327 Infineon Technologies BGA925L6.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a3043327f13e30132a4db54e64337 Description: IC AMP MMIC RF GNSS LNA TSLP-6
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BGB719N7ESDE6327XTMA1 BGB719N7ESDE6327XTMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IC RF AMP FM 10MHZ-1GHZ TSNP7-6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 10MHz ~ 1GHz
RF Type: FM
Voltage - Supply: 3V
Gain: 13.5dB
Current - Supply: 2.8mA
Noise Figure: 1.2dB
P1dB: -6dBm
Test Frequency: 100MHz
Supplier Device Package: PG-TSNP-7-6
Produkt ist nicht verfügbar
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BGM 1034N7 E6327 BGM 1034N7 E6327 Infineon Technologies bgm1034N7.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a304334fac4c60134fafa93ce0011 Description: IC AMP MMIC RF 17.0DB TSNP-7
auf Bestellung 15000 Stücke:
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BGS15AN16E6327XTSA1 BGS15AN16E6327XTSA1 Infineon Technologies BGS15AN16_v2_1.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433f1b26e8013f2d44cb463811 Description: IC RF SWITCH SP5T 3GHZ TSNP16-3
Produkt ist nicht verfügbar
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BGSF18DM20E6327XUMA1 BGSF18DM20E6327XUMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IC RF SWITCH SP8T
Packaging: Tape & Reel (TR)
Circuit: SP8T
RF Type: Cellular, 3G, GSM
Produkt ist nicht verfügbar
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S29JL032J70TFI020 Infineon-S29JL032J_32_Mb_(4M_X_8_BIT_2M_X_16_BIT)_3_V_SIMULTANEOUS_READ_WRITE_FLASH-AdditionalTechnicalInformation-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed71e7d5831&utm_source=cypress&utm_medium=referral&utm_campaign=2021
S29JL032J70TFI020
Hersteller: Infineon Technologies
Description: IC FLASH 32MBIT PARALLEL 48TSOP
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 4M x 8, 2M x 16
DigiKey Programmable: Not Verified
auf Bestellung 582 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.13 EUR
10+6.63 EUR
25+6.44 EUR
96+6.14 EUR
192+6 EUR
288+5.91 EUR
576+5.76 EUR
Mindestbestellmenge: 3
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S29JL032J70TFI310 Infineon-S29JL032J_32_Mb_(4M_X_8_BIT_2M_X_16_BIT)_3_V_SIMULTANEOUS_READ_WRITE_FLASH-AdditionalTechnicalInformation-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed71e7d5831&utm_source=cypress&utm_medium=referral&utm_campaign=2021
S29JL032J70TFI310
Hersteller: Infineon Technologies
Description: IC FLASH 32MBIT PARALLEL 48TSOP
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 4M x 8, 2M x 16
DigiKey Programmable: Verified
auf Bestellung 6423 Stücke:
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Anzahl Preis
3+5.88 EUR
10+5.47 EUR
25+5.31 EUR
96+5.07 EUR
192+4.95 EUR
288+4.88 EUR
576+4.75 EUR
1056+4.65 EUR
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S29JL032J70TFI320 Infineon-S29JL032J_32_Mb_(4M_X_8_BIT_2M_X_16_BIT)_3_V_SIMULTANEOUS_READ_WRITE_FLASH-AdditionalTechnicalInformation-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed71e7d5831&utm_source=cypress&utm_medium=referral&utm_campaign=2021
S29JL032J70TFI320
Hersteller: Infineon Technologies
Description: IC FLASH 32MBIT PARALLEL 48TSOP
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 4M x 8, 2M x 16
DigiKey Programmable: Not Verified
auf Bestellung 473 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.13 EUR
10+6.63 EUR
25+6.44 EUR
96+6.14 EUR
192+6 EUR
288+5.91 EUR
Mindestbestellmenge: 3
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S29JL032J70TFI410 Infineon-S29JL032J_32_Mb_(4M_X_8_BIT_2M_X_16_BIT)_3_V_SIMULTANEOUS_READ_WRITE_FLASH-AdditionalTechnicalInformation-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed71e7d5831&utm_source=cypress&utm_medium=referral&utm_campaign=2021
S29JL032J70TFI410
Hersteller: Infineon Technologies
Description: IC FLASH 32MBIT PARALLEL 48TSOP
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 4M x 8, 2M x 16
DigiKey Programmable: Verified
auf Bestellung 676 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.13 EUR
10+6.63 EUR
25+6.44 EUR
96+6.14 EUR
192+6 EUR
288+5.91 EUR
576+5.76 EUR
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S29JL032J70TFI420 Infineon-S29JL032J_32_Mb_(4M_X_8_BIT_2M_X_16_BIT)_3_V_SIMULTANEOUS_READ_WRITE_FLASH-AdditionalTechnicalInformation-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed71e7d5831&utm_source=cypress&utm_medium=referral&utm_campaign=2021
S29JL032J70TFI420
Hersteller: Infineon Technologies
Description: IC FLASH 32MBIT PARALLEL 48TSOP
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 4M x 8, 2M x 16
DigiKey Programmable: Verified
auf Bestellung 902 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.13 EUR
10+6.63 EUR
25+6.44 EUR
96+6.14 EUR
192+6 EUR
288+5.91 EUR
576+5.76 EUR
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S29JL064J60TFI000 Infineon-S29JL064J_64_Mb_(8M_x_8_Bit_4M_x_16_Bit)_3_V_Simultaneous_Read_Write_Flash-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6688c56c7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
S29JL064J60TFI000
Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 48TSOP
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 60 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Verified
auf Bestellung 436 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.09 EUR
10+12.05 EUR
25+11.79 EUR
40+11.75 EUR
96+10.55 EUR
288+10.23 EUR
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S29JL064J70TFI000 Infineon-S29JL064J_64_Mb_(8M_x_8_Bit_4M_x_16_Bit)_3_V_Simultaneous_Read_Write_Flash-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6688c56c7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
S29JL064J70TFI000
Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 48TSOP
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Verified
auf Bestellung 2188 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.86 EUR
10+11.04 EUR
25+10.7 EUR
96+10.21 EUR
192+9.96 EUR
288+9.81 EUR
576+9.57 EUR
1056+9.35 EUR
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S29PL032J70BAI120 Infineon-S29PL-J_128-_128-_64-_32-MBIT_(8_8_4_2M_X_16_BIT)_3_V_FLASH_WITH_ENHANCED_VERSATILEIO-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5806154f0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_e
S29PL032J70BAI120
Hersteller: Infineon Technologies
Description: IC FLASH 32MBIT PARALLEL 48FBGA
Produkt ist nicht verfügbar
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S29PL064J70BFW120 Infineon-S29PL-J_128-_128-_64-_32-MBIT_(8_8_4_2M_X_16_BIT)_3_V_FLASH_WITH_ENHANCED_VERSATILEIO-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5806154f0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_e
S29PL064J70BFW120
Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -25°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-FBGA (8.15x6.15)
Part Status: Obsolete
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 4M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S29PL064J70BFW122 Infineon-S29PL-J_128-_128-_64-_32-MBIT_(8_8_4_2M_X_16_BIT)_3_V_FLASH_WITH_ENHANCED_VERSATILEIO-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5806154f0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_e
S29PL064J70BFW122
Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 48FBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -25°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-FBGA (8.15x6.15)
Part Status: Obsolete
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 4M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8C3666LTI-203 #!?fileId=8ac78c8c7d0d8da4017d0ec73d263e88
CY8C3666LTI-203
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 64KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 8051
Data Converters: A/D 16x12b; D/A 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 38
DigiKey Programmable: Not Verified
auf Bestellung 1300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+24.08 EUR
10+22.12 EUR
25+21.21 EUR
80+18.69 EUR
260+17.77 EUR
520+16.62 EUR
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CY8C3665LTI-199 #!?fileId=8ac78c8c7d0d8da4017d0ec73d263e88
CY8C3665LTI-199
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 68QFN
Produkt ist nicht verfügbar
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CY8C3666LTI-201 #!?fileId=8ac78c8c7d0d8da4017d0ec73d263e88
CY8C3666LTI-201
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 64KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 8051
Data Converters: A/D 16x12b; D/A 2x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 38
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8CKIT-003B CY8CKIT-003_QSG.pdf
CY8CKIT-003B
Hersteller: Infineon Technologies
Description: CY8C3866AXI EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 8-Bit
Contents: Board(s), Cable(s), Accessories
Core Processor: 8051
Board Type: Evaluation Platform
Utilized IC / Part: CY8C3866AXI
Part Status: Obsolete
Produkt ist nicht verfügbar
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CY8CKIT-001C Infineon-PSoC_5LP_CY8C58LP_Family_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec547013ab9
CY8CKIT-001C
Hersteller: Infineon Technologies
Description: CY8C28/CY8C38/CY8C58LP EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 8-Bit
Contents: Board(s), Cable(s), LCD, Power Supply, Accessories
Core Processor: M8C
Board Type: Evaluation Platform
Utilized IC / Part: CY8C28, CY8C38, CY8C58LP
Part Status: Obsolete
Produkt ist nicht verfügbar
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IRFH3702TRPBF irfh3702pbf.pdf?fileId=5546d462533600a40153561a25871e76
IRFH3702TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 16A/42A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 16A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-PQFN (3x3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 15 V
auf Bestellung 1343 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.58 EUR
18+0.99 EUR
100+0.64 EUR
500+0.5 EUR
1000+0.45 EUR
Mindestbestellmenge: 12
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IRFH5250TRPBF irfh5250pbf.pdf?fileId=5546d462533600a40153561b2c791eb8
IRFH5250TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 45A/100A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7174 pF @ 13 V
auf Bestellung 8952 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.4 EUR
10+2.17 EUR
100+1.48 EUR
500+1.18 EUR
1000+1.14 EUR
Mindestbestellmenge: 6
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IRFH5302TRPBF irfh5302pbf.pdf?fileId=5546d462533600a40153561b58dc1ec3
IRFH5302TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 32A/100A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: PQFN (5x6) Single Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 15 V
auf Bestellung 819 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.75 EUR
15+1.18 EUR
100+0.9 EUR
500+0.86 EUR
Mindestbestellmenge: 7
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IRLHS6342TRPBF irlhs6342pbf.pdf?fileId=5546d462533600a401535663b52625ad
IRLHS6342TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 8.7A/19A 6PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 19A (Tc)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 8.5A, 4.5V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: 6-PQFN (2x2)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1019 pF @ 25 V
auf Bestellung 129316 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
26+0.69 EUR
31+0.58 EUR
100+0.41 EUR
500+0.34 EUR
1000+0.32 EUR
Mindestbestellmenge: 26
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IRLHS6376TRPBF infineon-irlhs6376-datasheet-en.pdf
IRLHS6376TRPBF
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 30V 3.6A PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V
Rds On (Max) @ Id, Vgs: 63mOhm @ 3.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: 6-PQFN Dual (2x2)
Part Status: Active
auf Bestellung 12107 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.27 EUR
23+0.79 EUR
100+0.51 EUR
500+0.39 EUR
1000+0.35 EUR
2000+0.32 EUR
Mindestbestellmenge: 14
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IRFHM9331TRPBF irfhm9331pbf.pdf?fileId=5546d462533600a4015356237f7e1f59
IRFHM9331TRPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 11A/24A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 11A, 20V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Supplier Device Package: PQFN (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V, 20V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1543 pF @ 25 V
auf Bestellung 13012 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.39 EUR
20+0.89 EUR
100+0.62 EUR
500+0.48 EUR
1000+0.43 EUR
2000+0.39 EUR
Mindestbestellmenge: 13
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IRFH5206TRPBF irfh5206pbf.pdf?fileId=5546d462533600a40153561afcd01eac
IRFH5206TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 16A/89A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 89A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2490 pF @ 25 V
Produkt ist nicht verfügbar
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IRFH6200TRPBF irfh6200pbf.pdf?fileId=5546d462533600a40153561e9b131ed0
IRFH6200TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 49A/100A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.95mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 10890 pF @ 10 V
auf Bestellung 5258 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.63 EUR
10+2.32 EUR
100+1.58 EUR
500+1.26 EUR
1000+1.23 EUR
Mindestbestellmenge: 5
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CY14B101J2-SXI Infineon-CY14C101I_CY14B101I_CY14E101I_1-Mbit_(128_K_8)_Serial_(I2C)_nvSRAM_with_Real_Time_Clock-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebfe05a3466
CY14B101J2-SXI
Hersteller: Infineon Technologies
Description: IC NVSRAM 1MBIT I2C 3.4MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 3.4 MHz
Memory Format: NVSRAM
Supplier Device Package: 8-SOIC
Memory Interface: I2C
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
auf Bestellung 92 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+17.23 EUR
10+15.96 EUR
25+15.6 EUR
Mindestbestellmenge: 2
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IR4312MTRPBF ir4302.pdf?fileId=5546d462533600a4015355d602a9181d
IR4312MTRPBF
Hersteller: Infineon Technologies
Description: IC AMP CLASS D STEREO 35W 44QFN
Features: Depop, Differential Inputs
Packaging: Cut Tape (CT)
Package / Case: 44-PowerVFQFN
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 100°C (TA)
Voltage - Supply: 10V ~ 15V
Max Output Power x Channels @ Load: 35W x 2 @ 4Ohm
Supplier Device Package: 44-PQFN (7x7)
Part Status: Obsolete
Produkt ist nicht verfügbar
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IR4312MTRPBF ir4302.pdf?fileId=5546d462533600a4015355d602a9181d
IR4312MTRPBF
Hersteller: Infineon Technologies
Description: IC AMP CLASS D STEREO 35W 44QFN
Features: Depop, Differential Inputs
Packaging: Tape & Reel (TR)
Package / Case: 44-PowerVFQFN
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 100°C (TA)
Voltage - Supply: 10V ~ 15V
Max Output Power x Channels @ Load: 35W x 2 @ 4Ohm
Supplier Device Package: 44-PQFN (7x7)
Part Status: Obsolete
Produkt ist nicht verfügbar
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IRAUDAMP18 iraudamp18.pdf_fileid=5546d462533600a40153569a96eb2be9.pdf
IRAUDAMP18
Hersteller: Infineon Technologies
Description: BOARD EVAL FOR IR4312
Packaging: Bulk
Output Type: 2-Channel (Stereo)
Amplifier Type: Class D
Voltage - Supply: 18V ~ 31V
Max Output Power x Channels @ Load: 35W x 2 @ 4Ohm
Board Type: Fully Populated
Utilized IC / Part: IR4312
Supplied Contents: Board(s)
Part Status: Active
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+264.12 EUR
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IRAUDAMP15 iraudamp15.pdf?fileId=5546d462533600a4015356973e6e2bdf
IRAUDAMP15
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR IR4311
Packaging: Bulk
Output Type: 2-Channel (Stereo)
Amplifier Type: Class D
Contents: Board(s)
Voltage - Supply: 18V ~ 31V
Max Output Power x Channels @ Load: 35W x 2 @ 4Ohm
Board Type: Fully Populated
Utilized IC / Part: IR4311
Supplied Contents: Board(s)
Part Status: Active
Produkt ist nicht verfügbar
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IRGP4640D-EPBF IRGx4640D%28-E%29PbF.pdf
IRGP4640D-EPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 65A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 89 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 41ns/104ns
Switching Energy: 115µJ (on), 600µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 75 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 72 A
Power - Max: 250 W
Produkt ist nicht verfügbar
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IRGP4650DPBF IRSD-S-A0000175678-1.pdf?t.download=true&u=5oefqw
IRGP4650DPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 76A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 120 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 35A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 46ns/105ns
Switching Energy: 390µJ (on), 632µJ (off)
Test Condition: 400V, 35A, 10Ohm, 15V
Gate Charge: 104 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 76 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 268 W
Produkt ist nicht verfügbar
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IRGP4640DPBF IRGx4640D%28-E%29PbF.pdf
IRGP4640DPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 65A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 89 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 41ns/104ns
Switching Energy: 115µJ (on), 600µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 75 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 72 A
Power - Max: 250 W
Produkt ist nicht verfügbar
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IRFR220NTRLPBF irfr220npbf.pdf?fileId=5546d462533600a40153562d8a7b206f
IRFR220NTRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.9A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
Produkt ist nicht verfügbar
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IRFR3910TRLPBF irfr3910pbf.pdf?fileId=5546d462533600a401535631f05d20df
IRFR3910TRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 16A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 10A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
Produkt ist nicht verfügbar
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IRLR2905TRLPBF irlr2905pbf.pdf?fileId=5546d462533600a40153566cc2bb2679
IRLR2905TRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Produkt ist nicht verfügbar
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IRLR3410TRLPBF irlr3410pbf.pdf?fileId=5546d462533600a40153566d14c52695
IRLR3410TRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 17A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
auf Bestellung 33824 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.11 EUR
20+0.9 EUR
100+0.71 EUR
500+0.65 EUR
1000+0.63 EUR
Mindestbestellmenge: 9
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IR2520DSTRPBF ir2520d.pdf?fileId=5546d462533600a4015355c9af7e16e4
IR2520DSTRPBF
Hersteller: Infineon Technologies
Description: IC BALLAST CNTRL 86KHZ 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 34kHz ~ 86kHz
Type: Ballast Controller
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 11.4V ~ 15.4V
Supplier Device Package: 8-SOIC
Dimming: No
Part Status: Not For New Designs
Current - Supply: 10 mA
Produkt ist nicht verfügbar
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IR2184STRPBF ir2184.pdf?fileId=5546d462533600a4015355c955e616d4
IR2184STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 5474 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.38 EUR
10+2.5 EUR
25+2.29 EUR
100+2.04 EUR
250+1.93 EUR
500+1.86 EUR
1000+1.8 EUR
Mindestbestellmenge: 6
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IRFR6215TRLPBF irfr6215pbf.pdf?fileId=5546d462533600a40153563595592114
IRFR6215TRLPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 150V 13A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 295mOhm @ 6.6A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
auf Bestellung 1137 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.62 EUR
12+1.56 EUR
100+1.19 EUR
500+1.01 EUR
1000+0.95 EUR
Mindestbestellmenge: 7
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IR2010STRPBF ir2010.pdf?fileId=5546d462533600a4015355c48f901660
IR2010STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 10ns, 15ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 3A, 3A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 3964 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.02 EUR
10+3.77 EUR
25+3.46 EUR
100+3.11 EUR
250+2.95 EUR
500+2.85 EUR
Mindestbestellmenge: 4
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IR11672ASTRPBF ir11672aspbf.pdf?fileId=5546d462533600a4015355c455561653
IR11672ASTRPBF
Hersteller: Infineon Technologies
Description: IC REC SMART CONTROL 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Voltage - Input: 200V
Operating Temperature: -25°C ~ 125°C (TJ)
Voltage - Supply: 11.4V ~ 18V
Applications: Secondary-Side Controller
Supplier Device Package: 8-SOIC
Part Status: Active
Current - Supply: 50 mA
DigiKey Programmable: Not Verified
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.24 EUR
10+2.39 EUR
25+2.18 EUR
100+1.95 EUR
250+1.84 EUR
500+1.77 EUR
1000+1.72 EUR
Mindestbestellmenge: 6
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IRLR2908TRPBF irlr2908pbf.pdf?fileId=5546d462533600a40153566cdace2681
IRLR2908TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 30A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 23A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V
auf Bestellung 4072 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.39 EUR
11+1.6 EUR
100+1.14 EUR
500+0.95 EUR
1000+0.88 EUR
Mindestbestellmenge: 8
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IRS2153DSTRPBF IRSDS08244-1.pdf?t.download=true&u=5oefqw
IRS2153DSTRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.4V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 120ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 180mA, 260mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 9892 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.87 EUR
14+1.35 EUR
25+1.22 EUR
100+1.08 EUR
250+1.02 EUR
500+0.97 EUR
1000+0.94 EUR
Mindestbestellmenge: 10
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IR21094STRPBF ir2109.pdf?fileId=5546d462533600a4015355c7e85b1679
IR21094STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 15114 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+2.97 EUR
10+2.19 EUR
25+2 EUR
100+1.78 EUR
250+1.68 EUR
500+1.62 EUR
1000+1.57 EUR
Mindestbestellmenge: 6
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IR3856MTRPBF ir3856m.pdf?fileId=5546d462533600a4015355d5818517f8
IR3856MTRPBF
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJ 6A 17PQFN
Packaging: Cut Tape (CT)
Package / Case: 17-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 6A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 225kHz ~ 1.65MHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: 17-PQFN (4x5)
Synchronous Rectifier: Yes
Voltage - Output (Max): 18.9V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.7V
Produkt ist nicht verfügbar
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IRLHS6242TRPBF irlhs6242pbf.pdf?fileId=5546d462533600a401535663a52d25a9
IRLHS6242TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 10A/12A 6PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 8.5A, 4.5V
Power Dissipation (Max): 1.98W (Ta), 9.6W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: 6-PQFN (2x2) (DFN2020)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 10 V
auf Bestellung 80512 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.9 EUR
36+0.49 EUR
100+0.29 EUR
500+0.28 EUR
Mindestbestellmenge: 20
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IRS2304STRPBF irs2304spbf.pdf?fileId=5546d462533600a40153567a8fe72802
IRS2304STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.7V, 2.3V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 4891 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.62 EUR
16+1.16 EUR
25+1.05 EUR
100+0.93 EUR
250+0.87 EUR
500+0.83 EUR
1000+0.8 EUR
Mindestbestellmenge: 11
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IRFH5300TRPBF irfh5300pbf.pdf?fileId=5546d462533600a40153561b3e141ebc
IRFH5300TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 40A/100A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 15 V
auf Bestellung 3548 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.82 EUR
10+1.86 EUR
100+1.26 EUR
500+1 EUR
1000+0.93 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IRF9389TRPBF irf9389pbf.pdf?fileId=5546d462533600a40153561178901daf
IRF9389TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 30V 6.8A/4.6A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.8A, 4.6A
Input Capacitance (Ciss) (Max) @ Vds: 398pF @ 15V
Rds On (Max) @ Id, Vgs: 27mOhm @ 6.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.3V @ 10µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 28000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.26 EUR
8000+0.23 EUR
20000+0.22 EUR
Mindestbestellmenge: 4000
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IRF9389TRPBF irf9389pbf.pdf?fileId=5546d462533600a40153561178901daf
IRF9389TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 30V 6.8A/4.6A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.8A, 4.6A
Input Capacitance (Ciss) (Max) @ Vds: 398pF @ 15V
Rds On (Max) @ Id, Vgs: 27mOhm @ 6.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.3V @ 10µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 31174 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.16 EUR
25+0.73 EUR
100+0.47 EUR
500+0.36 EUR
1000+0.32 EUR
2000+0.29 EUR
Mindestbestellmenge: 16
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BFP840ESDH6327XTSA1 Infineon-BFP840ESD-DS-v02_00-EN.pdf?fileId=5546d46265f064ff01663896bcab4eb6
BFP840ESDH6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 2.25V 80GHZ SOT-343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 18.5dB
Power - Max: 75mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 2.25V
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 1.8V
Frequency - Transition: 80GHz
Noise Figure (dB Typ @ f): 0.85dB @ 5.5GHz
Supplier Device Package: PG-SOT343-4-2
Produkt ist nicht verfügbar
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BFP840FESDH6327XTSA1 Infineon-BFP840FESD-DS-v02_00-EN.pdf?fileId=5546d46265f064ff01663896c6294eb9
BFP840FESDH6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 2.6V 85GHZ 4TSFP
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 35dB
Power - Max: 75mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 2.6V
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 1.8V
Frequency - Transition: 85GHz
Noise Figure (dB Typ @ f): 0.75dB @ 5.5GHz
Supplier Device Package: PG-TSFP-4-1
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.28 EUR
6000+0.27 EUR
Mindestbestellmenge: 3000
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BFP842ESDH6327XTSA1 Infineon-BFP842ESD-DS-v02_00-EN.pdf?fileId=5546d46265f064ff01663896cf294ebc
BFP842ESDH6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 3.7V 60GHZ SOT-343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 26dB
Power - Max: 120mW
Current - Collector (Ic) (Max): 40mA
Voltage - Collector Emitter Breakdown (Max): 3.7V
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 15mA, 2.5V
Frequency - Transition: 60GHz
Noise Figure (dB Typ @ f): 0.65dB @ 3.5GHz
Supplier Device Package: PG-SOT343-4-2
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.28 EUR
Mindestbestellmenge: 3000
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BGA 712L16 E6327 fundamentals-of-power-semiconductors
BGA 712L16 E6327
Hersteller: Infineon Technologies
Description: IC RF AMP MMIC RF LNA TSLP-16
Packaging: Tape & Reel (TR)
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7500+1.21 EUR
Mindestbestellmenge: 7500
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BGA725L6E6327FTSA1 BGA725L6_V2+0.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433784a0400137ef9a4d341f23
BGA725L6E6327FTSA1
Hersteller: Infineon Technologies
Description: IC AMP GPS 1.55-1.615GHZ TSLP6-2
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: GPS/GNSS
Voltage - Supply: 1.5V ~ 3.6V
Gain: 20dB
Current - Supply: 3.6mA
Noise Figure: 0.65dB
P1dB: -16dBm
Supplier Device Package: TSLP-6-2
Part Status: Active
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BGA749N16E6327XTSA1 fundamentals-of-power-semiconductors
BGA749N16E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF AMP GPS 940MHZ TSNP7-1
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 940MHz
RF Type: General Purpose
Voltage - Supply: 3.6V
Gain: 16.1dB
Current - Supply: 10mA
Noise Figure: 1.2dB
Supplier Device Package: PG-TSNP-7-1
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BGA 925L6 E6327 BGA925L6.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a3043327f13e30132a4db54e64337
BGA 925L6 E6327
Hersteller: Infineon Technologies
Description: IC AMP MMIC RF GNSS LNA TSLP-6
Produkt ist nicht verfügbar
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BGB719N7ESDE6327XTMA1 fundamentals-of-power-semiconductors
BGB719N7ESDE6327XTMA1
Hersteller: Infineon Technologies
Description: IC RF AMP FM 10MHZ-1GHZ TSNP7-6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 10MHz ~ 1GHz
RF Type: FM
Voltage - Supply: 3V
Gain: 13.5dB
Current - Supply: 2.8mA
Noise Figure: 1.2dB
P1dB: -6dBm
Test Frequency: 100MHz
Supplier Device Package: PG-TSNP-7-6
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BGM 1034N7 E6327 bgm1034N7.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a304334fac4c60134fafa93ce0011
BGM 1034N7 E6327
Hersteller: Infineon Technologies
Description: IC AMP MMIC RF 17.0DB TSNP-7
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
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BGS15AN16E6327XTSA1 BGS15AN16_v2_1.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433f1b26e8013f2d44cb463811
BGS15AN16E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH SP5T 3GHZ TSNP16-3
Produkt ist nicht verfügbar
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BGSF18DM20E6327XUMA1 fundamentals-of-power-semiconductors
BGSF18DM20E6327XUMA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH SP8T
Packaging: Tape & Reel (TR)
Circuit: SP8T
RF Type: Cellular, 3G, GSM
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