Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (124663) > Seite 201 nach 2078

Wählen Sie Seite:   [  << Vorherige Seite ]  1 196 197 198 199 200 201 202 203 204 205 206 207 414 621 828 1035 1242 1449 1656 1863 2070 2078  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
IRS2153DSTRPBF IRS2153DSTRPBF Infineon Technologies IRSDS08244-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.4V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 120ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 180mA, 260mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 2154 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.53 EUR
12+1.84 EUR
25+1.68 EUR
100+1.49 EUR
250+1.39 EUR
500+1.33 EUR
1000+1.32 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IR21094STRPBF IR21094STRPBF Infineon Technologies ir2109.pdf?fileId=5546d462533600a4015355c7e85b1679 Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 14494 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.67 EUR
10+2.7 EUR
25+2.46 EUR
100+2.19 EUR
250+2.07 EUR
500+2 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IR3856MTRPBF IR3856MTRPBF Infineon Technologies ir3856m.pdf?fileId=5546d462533600a4015355d5818517f8 Description: IC REG BUCK ADJ 6A 17PQFN
Voltage - Output (Min/Fixed): 0.7V
Voltage - Input (Min): 1.5V
Voltage - Output (Max): 18.9V
Synchronous Rectifier: Yes
Supplier Device Package: 17-PQFN (4x5)
Topology: Buck
Voltage - Input (Max): 21V
Frequency - Switching: 225kHz ~ 1.65MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 6A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 17-PowerVQFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLHS6242TRPBF IRLHS6242TRPBF Infineon Technologies irlhs6242pbf.pdf?fileId=5546d462533600a401535663a52d25a9 Description: MOSFET N-CH 20V 10A/12A 6PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 8.5A, 4.5V
Power Dissipation (Max): 1.98W (Ta), 9.6W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: 6-PQFN (2x2) (DFN2020)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 10 V
auf Bestellung 30400 Stücke:
Lieferzeit 10-14 Tag (e)
11+2.01 EUR
17+1.25 EUR
100+0.81 EUR
500+0.63 EUR
1000+0.57 EUR
2000+0.51 EUR
Mindestbestellmenge: 11 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRS2304STRPBF IRS2304STRPBF Infineon Technologies irs2304spbf.pdf?fileId=5546d462533600a40153567a8fe72802 Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Current - Peak Output (Source, Sink): 290mA, 600mA
Logic Voltage - VIL, VIH: 0.7V, 2.3V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 70ns, 35ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 4341 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.93 EUR
16+1.39 EUR
25+1.26 EUR
100+1.11 EUR
250+1.04 EUR
500+1 EUR
1000+0.96 EUR
Mindestbestellmenge: 11 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRFH5300TRPBF IRFH5300TRPBF Infineon Technologies irfh5300pbf.pdf?fileId=5546d462533600a40153561b3e141ebc Description: MOSFET N-CH 30V 40A/100A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 15 V
auf Bestellung 7789 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.47 EUR
10+2.21 EUR
100+1.48 EUR
500+1.17 EUR
1000+1.07 EUR
2000+1 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRF9389TRPBF IRF9389TRPBF Infineon Technologies irf9389pbf.pdf?fileId=5546d462533600a40153561178901daf Description: MOSFET N/P-CH 30V 6.8A/4.6A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.8A, 4.6A
Input Capacitance (Ciss) (Max) @ Vds: 398pF @ 15V
Rds On (Max) @ Id, Vgs: 27mOhm @ 6.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.3V @ 10µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 72000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.35 EUR
8000+0.32 EUR
12000+0.31 EUR
20000+0.3 EUR
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRF9389TRPBF IRF9389TRPBF Infineon Technologies irf9389pbf.pdf?fileId=5546d462533600a40153561178901daf Description: MOSFET N/P-CH 30V 6.8A/4.6A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.8A, 4.6A
Input Capacitance (Ciss) (Max) @ Vds: 398pF @ 15V
Rds On (Max) @ Id, Vgs: 27mOhm @ 6.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.3V @ 10µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 75036 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.52 EUR
23+0.95 EUR
100+0.61 EUR
500+0.46 EUR
1000+0.42 EUR
2000+0.38 EUR
Mindestbestellmenge: 14 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BFP840ESDH6327XTSA1 BFP840ESDH6327XTSA1 Infineon Technologies Infineon-BFP840ESD-DS-v02_00-EN.pdf?fileId=5546d46265f064ff01663896bcab4eb6 Description: RF TRANS NPN 2.25V 80GHZ SOT-343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 18.5dB
Power - Max: 75mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 2.25V
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 1.8V
Frequency - Transition: 80GHz
Noise Figure (dB Typ @ f): 0.85dB @ 5.5GHz
Supplier Device Package: PG-SOT343-4-2
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BFP840FESDH6327XTSA1 BFP840FESDH6327XTSA1 Infineon Technologies Infineon-BFP840FESD-DS-v02_00-EN.pdf?fileId=5546d46265f064ff01663896c6294eb9 Description: RF TRANS NPN 2.6V 85GHZ 4TSFP-4
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 35dB
Power - Max: 75mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 2.6V
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 1.8V
Frequency - Transition: 85GHz
Noise Figure (dB Typ @ f): 0.75dB @ 5.5GHz
Supplier Device Package: PG-TSFP-4-1
auf Bestellung 78000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.46 EUR
6000+0.45 EUR
9000+0.44 EUR
21000+0.43 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BFP842ESDH6327XTSA1 BFP842ESDH6327XTSA1 Infineon Technologies Infineon-BFP842ESD-DS-v02_00-EN.pdf?fileId=5546d46265f064ff01663896cf294ebc Description: RF TRANS NPN 3.7V 60GHZ SOT-343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 26dB
Power - Max: 120mW
Current - Collector (Ic) (Max): 40mA
Voltage - Collector Emitter Breakdown (Max): 3.7V
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 15mA, 2.5V
Frequency - Transition: 60GHz
Noise Figure (dB Typ @ f): 0.65dB @ 3.5GHz
Supplier Device Package: PG-SOT343-4-2
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.42 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BGA 712L16 E6327 BGA 712L16 E6327 Infineon Technologies fundamentals-of-power-semiconductors Description: IC RF AMP MMIC RF LNA TSLP-16
Packaging: Tape & Reel (TR)
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
7500+1.44 EUR
Mindestbestellmenge: 7500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BGA725L6E6327FTSA1 BGA725L6E6327FTSA1 Infineon Technologies BGA725L6_V2+0.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433784a0400137ef9a4d341f23 Description: IC AMP GPS 1.55-1.615GHZ TSLP6-2
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: GPS/GNSS
Voltage - Supply: 1.5V ~ 3.6V
Gain: 20dB
Current - Supply: 3.6mA
Noise Figure: 0.65dB
P1dB: -16dBm
Supplier Device Package: TSLP-6-2
Part Status: Active
Produkt ist nicht verfügbar
 Mindestbestellmenge: 15000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BGA749N16E6327XTSA1 BGA749N16E6327XTSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IC RF AMP GPS 940MHZ TSNP7-1
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 940MHz
RF Type: General Purpose
Voltage - Supply: 3.6V
Gain: 16.1dB
Current - Supply: 10mA
Noise Figure: 1.2dB
Supplier Device Package: PG-TSNP-7-1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BGA 925L6 E6327 BGA 925L6 E6327 Infineon Technologies BGA925L6.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a3043327f13e30132a4db54e64337 Description: IC AMP MMIC RF GNSS LNA TSLP-6
Produkt ist nicht verfügbar
 Mindestbestellmenge: 15000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BGB719N7ESDE6327XTMA1 BGB719N7ESDE6327XTMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IC RF AMP FM 10MHZ-1GHZ TSNP7-6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 10MHz ~ 1GHz
RF Type: FM
Voltage - Supply: 3V
Gain: 13.5dB
Current - Supply: 2.8mA
Noise Figure: 1.2dB
P1dB: -6dBm
Test Frequency: 100MHz
Supplier Device Package: PG-TSNP-7-6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BGM 1034N7 E6327 BGM 1034N7 E6327 Infineon Technologies bgm1034N7.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a304334fac4c60134fafa93ce0011 Description: IC AMP MMIC RF 17.0DB TSNP-7
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BGS15AN16E6327XTSA1 BGS15AN16E6327XTSA1 Infineon Technologies BGS15AN16_v2_1.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433f1b26e8013f2d44cb463811 Description: IC RF SWITCH SP5T 3GHZ TSNP16-3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BGSF18DM20E6327XUMA1 BGSF18DM20E6327XUMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IC RF SWITCH SP8T
Packaging: Tape & Reel (TR)
Circuit: SP8T
RF Type: Cellular, 3G, GSM
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ESD3V3S1B02LRHE6327XTSA1 ESD3V3S1B02LRHE6327XTSA1 Infineon Technologies ESD3V3S1B_ESD_Transient_Protection_Diode_Infineon.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a3043382e837301385c223ad03336 Description: TVS DIODE 3.3VWM 6.8VC TSLP2-17
Produkt ist nicht verfügbar
 Mindestbestellmenge: 15000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ESD3V3XU1USE6327XTSA1 ESD3V3XU1USE6327XTSA1 Infineon Technologies ESD3V3XU1US.pdf Description: TVS DIODE 3.3VWM 11VC TSSLP-2-1
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSSLP-2-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.5V (Typ)
Voltage - Clamping (Max) @ Ipp: 11V (Typ)
Power Line Protection: No
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TVS3V3L4UE6327HTSA1 TVS3V3L4UE6327HTSA1 Infineon Technologies TVS3V3L4U_rev_2_2.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a3043382e837301385be7912532ed Description: TVS DIODE 3.3VWM 7.7VC PGSC746
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 20A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-SC74-6
Unidirectional Channels: 4
Bidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 7.7V (Typ)
Power Line Protection: No
auf Bestellung 54000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.37 EUR
6000+0.36 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BFP840ESDH6327XTSA1 BFP840ESDH6327XTSA1 Infineon Technologies Infineon-BFP840ESD-DS-v02_00-EN.pdf?fileId=5546d46265f064ff01663896bcab4eb6 Description: RF TRANS NPN 2.25V 80GHZ SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 18.5dB
Power - Max: 75mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 2.25V
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 1.8V
Frequency - Transition: 80GHz
Noise Figure (dB Typ @ f): 0.85dB @ 5.5GHz
Supplier Device Package: PG-SOT343-4-2
auf Bestellung 2640 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.96 EUR
32+0.67 EUR
36+0.6 EUR
100+0.52 EUR
250+0.48 EUR
500+0.46 EUR
1000+0.44 EUR
Mindestbestellmenge: 22 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BFP840FESDH6327XTSA1 BFP840FESDH6327XTSA1 Infineon Technologies Infineon-BFP840FESD-DS-v02_00-EN.pdf?fileId=5546d46265f064ff01663896c6294eb9 Description: RF TRANS NPN 2.6V 85GHZ 4TSFP-4
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 35dB
Power - Max: 75mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 2.6V
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 1.8V
Frequency - Transition: 85GHz
Noise Figure (dB Typ @ f): 0.75dB @ 5.5GHz
Supplier Device Package: PG-TSFP-4-1
auf Bestellung 80420 Stücke:
Lieferzeit 10-14 Tag (e)
20+1.05 EUR
29+0.74 EUR
32+0.65 EUR
100+0.57 EUR
250+0.54 EUR
500+0.51 EUR
1000+0.49 EUR
Mindestbestellmenge: 20 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BFP842ESDH6327XTSA1 BFP842ESDH6327XTSA1 Infineon Technologies Infineon-BFP842ESD-DS-v02_00-EN.pdf?fileId=5546d46265f064ff01663896cf294ebc Description: RF TRANS NPN 3.7V 60GHZ SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 26dB
Power - Max: 120mW
Current - Collector (Ic) (Max): 40mA
Voltage - Collector Emitter Breakdown (Max): 3.7V
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 15mA, 2.5V
Frequency - Transition: 60GHz
Noise Figure (dB Typ @ f): 0.65dB @ 3.5GHz
Supplier Device Package: PG-SOT343-4-2
Part Status: Active
auf Bestellung 5317 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.96 EUR
32+0.67 EUR
36+0.6 EUR
100+0.52 EUR
250+0.48 EUR
500+0.46 EUR
1000+0.44 EUR
Mindestbestellmenge: 22 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BGA725L6E6327FTSA1 BGA725L6E6327FTSA1 Infineon Technologies BGA725L6_V2+0.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433784a0400137ef9a4d341f23 Description: IC AMP GPS 1.55-1.615GHZ TSLP6-2
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: GPS/GNSS
Voltage - Supply: 1.5V ~ 3.6V
Gain: 20dB
Current - Supply: 3.6mA
Noise Figure: 0.65dB
P1dB: -16dBm
Supplier Device Package: TSLP-6-2
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BGA749N16E6327XTSA1 BGA749N16E6327XTSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IC RF AMP GPS 940MHZ TSNP7-1
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 940MHz
RF Type: General Purpose
Voltage - Supply: 3.6V
Gain: 16.1dB
Current - Supply: 10mA
Noise Figure: 1.2dB
Supplier Device Package: PG-TSNP-7-1
auf Bestellung 7490 Stücke:
Lieferzeit 10-14 Tag (e)
6+4.11 EUR
10+3.55 EUR
25+3.34 EUR
100+3.07 EUR
250+2.92 EUR
500+2.8 EUR
1000+2.69 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BGA 925L6 E6327 BGA 925L6 E6327 Infineon Technologies BGA925L6.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a3043327f13e30132a4db54e64337 Description: IC AMP MMIC RF GNSS LNA TSLP-6
auf Bestellung 23159 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
BGB719N7ESDE6327XTMA1 BGB719N7ESDE6327XTMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IC RF AMP FM 10MHZ-1GHZ TSNP7-6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 10MHz ~ 1GHz
RF Type: FM
Voltage - Supply: 3V
Gain: 13.5dB
Current - Supply: 2.8mA
Noise Figure: 1.2dB
P1dB: -6dBm
Test Frequency: 100MHz
Supplier Device Package: PG-TSNP-7-6
auf Bestellung 2286 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.27 EUR
21+1 EUR
25+0.93 EUR
100+0.86 EUR
250+0.81 EUR
500+0.8 EUR
1000+0.77 EUR
Mindestbestellmenge: 17 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BGM 1034N7 E6327 BGM 1034N7 E6327 Infineon Technologies bgm1034N7.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a304334fac4c60134fafa93ce0011 Description: IC AMP MMIC RF 17.0DB TSNP-7
auf Bestellung 16295 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
BGS15AN16E6327XTSA1 BGS15AN16E6327XTSA1 Infineon Technologies BGS15AN16_v2_1.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433f1b26e8013f2d44cb463811 Description: IC RF SWITCH SP5T 3GHZ TSNP16-3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ESD1P0RFWH6327XTSA1 ESD1P0RFWH6327XTSA1 Infineon Technologies esd1p0rfseries.pdf?folderId=db3a30431441fb5d01149221c9230fb2&fileId=db3a30431441fb5d01149228afda0fc7 Description: TVS DIODE 70VWM 15VC PGSOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet, HDMI, RF Antenna
Capacitance @ Frequency: 1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 70V (Max)
Supplier Device Package: PG-SOT323
Unidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 15V
Power Line Protection: No
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ESD3V3S1B02LRHE6327XTSA1 ESD3V3S1B02LRHE6327XTSA1 Infineon Technologies ESD3V3S1B_ESD_Transient_Protection_Diode_Infineon.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a3043382e837301385c223ad03336 Description: TVS DIODE 3.3VWM 6.8VC TSLP2-17
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ESD3V3XU1USE6327XTSA1 ESD3V3XU1USE6327XTSA1 Infineon Technologies ESD3V3XU1US.pdf Description: TVS DIODE 3.3VWM 11VC TSSLP-2-1
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 11V (Typ)
Voltage - Breakdown (Min): 6.5V (Typ)
Unidirectional Channels: 1
Supplier Device Package: PG-TSSLP-2-1
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Capacitance @ Frequency: 0.4pF @ 1MHz
Applications: Ethernet, HDMI
Operating Temperature: -40°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TVS3V3L4UE6327HTSA1 TVS3V3L4UE6327HTSA1 Infineon Technologies TVS3V3L4U_rev_2_2.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a3043382e837301385be7912532ed Description: TVS DIODE 3.3VWM 7.7VC PGSC746
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 20A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-SC74-6
Unidirectional Channels: 4
Bidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 7.7V (Typ)
Power Line Protection: No
auf Bestellung 54821 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.93 EUR
18+1.2 EUR
100+0.79 EUR
500+0.61 EUR
1000+0.55 EUR
Mindestbestellmenge: 11 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BGA 925L6 E6327 BGA 925L6 E6327 Infineon Technologies BGA925L6.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a3043327f13e30132a4db54e64337 Description: IC AMP MMIC RF GNSS LNA TSLP-6
auf Bestellung 23159 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
BGM 1034N7 E6327 BGM 1034N7 E6327 Infineon Technologies bgm1034N7.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a304334fac4c60134fafa93ce0011 Description: IC AMP MMIC RF 17.0DB TSNP-7
auf Bestellung 16330 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
ESD3V3S1B02LRHE6327XTSA1 ESD3V3S1B02LRHE6327XTSA1 Infineon Technologies ESD3V3S1B_ESD_Transient_Protection_Diode_Infineon.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a3043382e837301385c223ad03336 Description: TVS DIODE 3.3VWM 6.8VC TSLP2-17
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAR5002VH6327XTSA1 BAR5002VH6327XTSA1 Infineon Technologies bar50series.pdf?folderId=db3a304314dca3890114fea780a30a91&fileId=db3a304314dca3890114fea7dd410a92 Description: RF DIODE PIN 50V 250MW PG-SC79-2
Power Dissipation (Max): 250 mW
Current - Max: 100 mA
Part Status: Active
Supplier Device Package: PG-SC79-2
Voltage - Peak Reverse (Max): 50V
Resistance @ If, F: 4.5Ohm @ 10mA, 100MHz
Capacitance @ Vr, F: 0.4pF @ 5V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: PIN - Single
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
auf Bestellung 7132 Stücke:
Lieferzeit 10-14 Tag (e)
84+0.25 EUR
124+0.17 EUR
142+0.14 EUR
167+0.13 EUR
250+0.11 EUR
500+0.11 EUR
1000+0.1 EUR
Mindestbestellmenge: 84 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BAR6306WH6327XTSA1 BAR6306WH6327XTSA1 Infineon Technologies INFNS15694-1.pdf?t.download=true&u=5oefqw Description: RF DIODE PIN 50V 250MW PG-SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT323
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAR6406E6327HTSA1 BAR6406E6327HTSA1 Infineon Technologies Infineon-BAR64-06-DS-v01_01-EN.pdf?fileId=5546d462689a790c01690f0300ea3908 Description: RF DIODE PIN 150V 250MW PG-SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
auf Bestellung 8875 Stücke:
Lieferzeit 10-14 Tag (e)
72+0.3 EUR
102+0.2 EUR
115+0.18 EUR
135+0.15 EUR
250+0.14 EUR
500+0.13 EUR
Mindestbestellmenge: 72 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BAR6502VH6327XTSA1 BAR6502VH6327XTSA1 Infineon Technologies bar65series.pdf?folderId=db3a304314dca3890114fea780a30a91&fileId=db3a304314dca3890114ff1c81b50af0 Description: RF DIODE PIN 30V 250MW PG-SC79-2
Power Dissipation (Max): 250 mW
Current - Max: 100 mA
Part Status: Active
Supplier Device Package: PG-SC79-2
Voltage - Peak Reverse (Max): 30V
Resistance @ If, F: 900mOhm @ 10mA, 100MHz
Capacitance @ Vr, F: 0.8pF @ 3V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: PIN - Single
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
auf Bestellung 8092 Stücke:
Lieferzeit 10-14 Tag (e)
91+0.23 EUR
136+0.15 EUR
155+0.13 EUR
184+0.11 EUR
250+0.1 EUR
500+0.099 EUR
1000+0.093 EUR
Mindestbestellmenge: 91 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BAR81WH6327XTSA1 BAR81WH6327XTSA1 Infineon Technologies bar81series.pdf?folderId=db3a304314dca3890114fea780a30a91&fileId=db3a304314dca3890114ff203eb70af2 Description: DIODE STANDAR 30V 100MW SOT343-4
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Diode Type: Standard - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.9pF @ 3V, 1MHz
Resistance @ If, F: 1Ohm @ 5mA, 100MHz
Voltage - Peak Reverse (Max): 30V
Supplier Device Package: PG-SOT343-4-2
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 100 mW
auf Bestellung 23058 Stücke:
Lieferzeit 10-14 Tag (e)
18+1.18 EUR
26+0.82 EUR
29+0.74 EUR
100+0.64 EUR
250+0.6 EUR
500+0.57 EUR
1000+0.55 EUR
Mindestbestellmenge: 18 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BAR9002LSE6327XTSA1 BAR9002LSE6327XTSA1 Infineon Technologies bar90series.pdf Description: RF DIODE PIN 80V 150MW TSSLP-2
Supplier Device Package: PG-TSSLP-2-1
Voltage - Peak Reverse (Max): 80V
Resistance @ If, F: 800mOhm @ 10mA, 100MHz
Capacitance @ Vr, F: 0.35pF @ 1V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: PIN - Single
Package / Case: 0201 (0603 Metric)
Packaging: Cut Tape (CT)
Power Dissipation (Max): 150 mW
Current - Max: 100 mA
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAS3005A02VH6327XTSA1 BAS3005A02VH6327XTSA1 Infineon Technologies Infineon-BAS3005ASERIES-DS-v01_01-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30432d9b3066012db872f12d0bb7 Description: DIODE SCHOTTKY 30V 500MA PGSC792
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 15pF @ 5V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: PG-SC79-2
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 500 mA
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
auf Bestellung 3048 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.94 EUR
37+0.57 EUR
100+0.36 EUR
500+0.27 EUR
1000+0.24 EUR
Mindestbestellmenge: 23 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BAT15099E6327HTSA1 BAT15099E6327HTSA1 Infineon Technologies INFNS15420-1.pdf?t.download=true&u=5oefqw Description: DIODE SCHOTTKY 4V 100MW SOT143-4
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT-143-3D
Part Status: Active
Current - Max: 110 mA
Power Dissipation (Max): 100 mW
auf Bestellung 2135 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.87 EUR
18+1.17 EUR
100+0.76 EUR
500+0.58 EUR
1000+0.54 EUR
Mindestbestellmenge: 12 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BAT1704WH6327XTSA1 BAT1704WH6327XTSA1 Infineon Technologies Infineon-BAT17-04W-DS-v01_00-EN.pdf?fileId=5546d46265f064ff016638963bf54e8f Description: DIODE SCHOTTKY 4V 150MW SOT323-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Diode Type: Schottky - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT323
Part Status: Active
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
auf Bestellung 10382 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.99 EUR
35+0.61 EUR
100+0.38 EUR
500+0.29 EUR
1000+0.26 EUR
Mindestbestellmenge: 22 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BAT1705WH6327XTSA1 BAT1705WH6327XTSA1 Infineon Technologies BAT17_6-15-11.pdf Description: DIODE SCHOTTKY 4V 150MW SOT323-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Diode Type: Schottky - 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT323
Part Status: Active
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
auf Bestellung 6639 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.99 EUR
35+0.61 EUR
100+0.38 EUR
500+0.29 EUR
1000+0.26 EUR
Mindestbestellmenge: 22 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BAT1706WH6327XTSA1 BAT1706WH6327XTSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: DIODE SCHOTTKY 4V 150MW SOT323-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Diode Type: Schottky - 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT323
Part Status: Obsolete
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
BAT1804E6327HTSA1 BAT1804E6327HTSA1 Infineon Technologies bat18series.pdf?folderId=db3a304314dca3890114fde87a7a09ec&fileId=db3a304314dca3890114fe3a83ef0a87 Description: RF DIODE PIN 35V PG-SOT23
Current - Reverse Leakage @ Vr: 20 nA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 35 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PG-SOT23
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Reverse Recovery Time (trr): 120 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Current - Max: 100 mA
Voltage - Peak Reverse (Max): 35V
Capacitance @ Vr, F: 1pF @ 20V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: PIN - 1 Pair Series Connection
auf Bestellung 12963 Stücke:
Lieferzeit 10-14 Tag (e)
16+1.32 EUR
26+0.81 EUR
100+0.52 EUR
500+0.39 EUR
1000+0.36 EUR
Mindestbestellmenge: 16 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BAT68E6327HTSA1 BAT68E6327HTSA1 Infineon Technologies infineon-bat68series-ds-en.pdf Description: DIODE SCHOTTKY 8V 150MW SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Resistance @ If, F: 10Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 8V
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
auf Bestellung 10361 Stücke:
Lieferzeit 10-14 Tag (e)
48+0.44 EUR
69+0.31 EUR
78+0.27 EUR
100+0.23 EUR
250+0.21 EUR
500+0.2 EUR
1000+0.19 EUR
Mindestbestellmenge: 48 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BAT6804E6327HTSA1 BAT6804E6327HTSA1 Infineon Technologies bat68series.pdf?folderId=db3a304314dca389011518104e5d0df2&fileId=db3a304314dca38901151819a1ab0df5 Description: DIODE SCHOTTKY 8V 150MW SOT23-3
Power Dissipation (Max): 150 mW
Current - Max: 130 mA
Part Status: Active
Supplier Device Package: PG-SOT23
Voltage - Peak Reverse (Max): 8V
Resistance @ If, F: 10Ohm @ 5mA, 10kHz
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: Schottky - 1 Pair Series Connection
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 17346 Stücke:
Lieferzeit 10-14 Tag (e)
40+0.52 EUR
58+0.36 EUR
66+0.32 EUR
100+0.27 EUR
250+0.25 EUR
500+0.24 EUR
1000+0.23 EUR
Mindestbestellmenge: 40 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BAT6804WH6327XTSA1 BAT6804WH6327XTSA1 Infineon Technologies bat68series.pdf?folderId=db3a304314dca389011518104e5d0df2&fileId=db3a304314dca38901151819a1ab0df5 Description: DIODE SCHOTTKY 8V 150MW SOT323-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Diode Type: Schottky - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Resistance @ If, F: 10Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 8V
Supplier Device Package: PG-SOT323
Part Status: Active
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
auf Bestellung 12125 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.74 EUR
20+1.08 EUR
100+0.7 EUR
500+0.54 EUR
1000+0.49 EUR
Mindestbestellmenge: 13 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BAT6806WH6327XTSA1 BAT6806WH6327XTSA1 Infineon Technologies bat68series.pdf?folderId=db3a304314dca389011518104e5d0df2&fileId=db3a304314dca38901151819a1ab0df5 Description: DIODE SCHOTTKY 8V 150MW SOT323-3
Power Dissipation (Max): 150 mW
Current - Max: 130 mA
Part Status: Obsolete
Supplier Device Package: PG-SOT323
Voltage - Peak Reverse (Max): 8V
Resistance @ If, F: 10Ohm @ 5mA, 10kHz
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: Schottky - 1 Pair Common Anode
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BFP181E7764HTSA1 BFP181E7764HTSA1 Infineon Technologies bfp181.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef6801142665c77b0601&location=.en.product.findProductTypeByName.html_dgdl_bfp181.pdf Description: RF TRANS NPN 12V 8GHZ SOT-143-3D
Part Status: Active
Supplier Device Package: PG-SOT-143-3D
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Frequency - Transition: 8GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 70mA, 8V
Voltage - Collector Emitter Breakdown (Max): 12V
Current - Collector (Ic) (Max): 20mA
Power - Max: 175mW
Gain: 17.5dB ~ 21dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Packaging: Cut Tape (CT)
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
BFP183WH6327XTSA1 BFP183WH6327XTSA1 Infineon Technologies bfp183w.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef6801142672e8cd0613 Description: RF TRANS NPN 12V 8.5GHZ SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 22dB
Power - Max: 450mW
Current - Collector (Ic) (Max): 65mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
Frequency - Transition: 8.5GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BFP420FH6327XTSA1 BFP420FH6327XTSA1 Infineon Technologies Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920 Description: RF TRANS NPN 5.5V 25GHZ 4-TSFP
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 19.5dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 5.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Supplier Device Package: 4-TSFP
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BFP520H6327XTSA1 BFP520H6327XTSA1 Infineon Technologies Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920 Description: RF TRANS NPN 3.5V 45GHZ SOT-343
Part Status: Active
Supplier Device Package: PG-SOT343-3D
Noise Figure (dB Typ @ f): 0.95dB @ 1.8GHz
Frequency - Transition: 45GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 20mA, 2V
Voltage - Collector Emitter Breakdown (Max): 3.5V
Current - Collector (Ic) (Max): 40mA
Power - Max: 100mW
Gain: 22.5dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Packaging: Cut Tape (CT)
auf Bestellung 6196 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.92 EUR
33+0.64 EUR
37+0.57 EUR
100+0.5 EUR
250+0.46 EUR
500+0.44 EUR
1000+0.43 EUR
Mindestbestellmenge: 23 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BFP520FH6327XTSA1 BFP520FH6327XTSA1 Infineon Technologies Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920 Description: RF TRANS NPN 3.5V 45GHZ 4-TSFP
Part Status: Active
Packaging: Cut Tape (CT)
Supplier Device Package: 4-TSFP
Noise Figure (dB Typ @ f): 0.95dB @ 1.8GHz
Frequency - Transition: 45GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 20mA, 2V
Voltage - Collector Emitter Breakdown (Max): 3.5V
Current - Collector (Ic) (Max): 40mA
Power - Max: 100mW
Gain: 22.5dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BFP620FH7764XTSA1 BFP620FH7764XTSA1 Infineon Technologies Infineon-BFP620F-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f03a08d3926 Description: RF TRANS NPN 2.8V 65GHZ 4-TSFP
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21dB ~ 10dB
Power - Max: 185mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 2.8V
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 50mA, 1.5V
Frequency - Transition: 65GHz
Noise Figure (dB Typ @ f): 0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz
Supplier Device Package: 4-TSFP
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2153DSTRPBF IRSDS08244-1.pdf?t.download=true&u=5oefqw
IRS2153DSTRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.4V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 120ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 180mA, 260mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 2154 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.53 EUR
12+1.84 EUR
25+1.68 EUR
100+1.49 EUR
250+1.39 EUR
500+1.33 EUR
1000+1.32 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IR21094STRPBF ir2109.pdf?fileId=5546d462533600a4015355c7e85b1679
IR21094STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 14494 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.67 EUR
10+2.7 EUR
25+2.46 EUR
100+2.19 EUR
250+2.07 EUR
500+2 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IR3856MTRPBF ir3856m.pdf?fileId=5546d462533600a4015355d5818517f8
IR3856MTRPBF
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJ 6A 17PQFN
Voltage - Output (Min/Fixed): 0.7V
Voltage - Input (Min): 1.5V
Voltage - Output (Max): 18.9V
Synchronous Rectifier: Yes
Supplier Device Package: 17-PQFN (4x5)
Topology: Buck
Voltage - Input (Max): 21V
Frequency - Switching: 225kHz ~ 1.65MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 6A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 17-PowerVQFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLHS6242TRPBF irlhs6242pbf.pdf?fileId=5546d462533600a401535663a52d25a9
IRLHS6242TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 10A/12A 6PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 8.5A, 4.5V
Power Dissipation (Max): 1.98W (Ta), 9.6W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: 6-PQFN (2x2) (DFN2020)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 10 V
auf Bestellung 30400 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+2.01 EUR
17+1.25 EUR
100+0.81 EUR
500+0.63 EUR
1000+0.57 EUR
2000+0.51 EUR
Mindestbestellmenge: 11 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRS2304STRPBF irs2304spbf.pdf?fileId=5546d462533600a40153567a8fe72802
IRS2304STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Current - Peak Output (Source, Sink): 290mA, 600mA
Logic Voltage - VIL, VIH: 0.7V, 2.3V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 70ns, 35ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 4341 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+1.93 EUR
16+1.39 EUR
25+1.26 EUR
100+1.11 EUR
250+1.04 EUR
500+1 EUR
1000+0.96 EUR
Mindestbestellmenge: 11 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRFH5300TRPBF irfh5300pbf.pdf?fileId=5546d462533600a40153561b3e141ebc
IRFH5300TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 40A/100A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 15 V
auf Bestellung 7789 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.47 EUR
10+2.21 EUR
100+1.48 EUR
500+1.17 EUR
1000+1.07 EUR
2000+1 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRF9389TRPBF irf9389pbf.pdf?fileId=5546d462533600a40153561178901daf
IRF9389TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 30V 6.8A/4.6A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.8A, 4.6A
Input Capacitance (Ciss) (Max) @ Vds: 398pF @ 15V
Rds On (Max) @ Id, Vgs: 27mOhm @ 6.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.3V @ 10µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 72000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4000+0.35 EUR
8000+0.32 EUR
12000+0.31 EUR
20000+0.3 EUR
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRF9389TRPBF irf9389pbf.pdf?fileId=5546d462533600a40153561178901daf
IRF9389TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 30V 6.8A/4.6A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.8A, 4.6A
Input Capacitance (Ciss) (Max) @ Vds: 398pF @ 15V
Rds On (Max) @ Id, Vgs: 27mOhm @ 6.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.3V @ 10µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 75036 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
14+1.52 EUR
23+0.95 EUR
100+0.61 EUR
500+0.46 EUR
1000+0.42 EUR
2000+0.38 EUR
Mindestbestellmenge: 14 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BFP840ESDH6327XTSA1 Infineon-BFP840ESD-DS-v02_00-EN.pdf?fileId=5546d46265f064ff01663896bcab4eb6
BFP840ESDH6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 2.25V 80GHZ SOT-343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 18.5dB
Power - Max: 75mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 2.25V
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 1.8V
Frequency - Transition: 80GHz
Noise Figure (dB Typ @ f): 0.85dB @ 5.5GHz
Supplier Device Package: PG-SOT343-4-2
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BFP840FESDH6327XTSA1 Infineon-BFP840FESD-DS-v02_00-EN.pdf?fileId=5546d46265f064ff01663896c6294eb9
BFP840FESDH6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 2.6V 85GHZ 4TSFP-4
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 35dB
Power - Max: 75mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 2.6V
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 1.8V
Frequency - Transition: 85GHz
Noise Figure (dB Typ @ f): 0.75dB @ 5.5GHz
Supplier Device Package: PG-TSFP-4-1
auf Bestellung 78000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.46 EUR
6000+0.45 EUR
9000+0.44 EUR
21000+0.43 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BFP842ESDH6327XTSA1 Infineon-BFP842ESD-DS-v02_00-EN.pdf?fileId=5546d46265f064ff01663896cf294ebc
BFP842ESDH6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 3.7V 60GHZ SOT-343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 26dB
Power - Max: 120mW
Current - Collector (Ic) (Max): 40mA
Voltage - Collector Emitter Breakdown (Max): 3.7V
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 15mA, 2.5V
Frequency - Transition: 60GHz
Noise Figure (dB Typ @ f): 0.65dB @ 3.5GHz
Supplier Device Package: PG-SOT343-4-2
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.42 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BGA 712L16 E6327 fundamentals-of-power-semiconductors
BGA 712L16 E6327
Hersteller: Infineon Technologies
Description: IC RF AMP MMIC RF LNA TSLP-16
Packaging: Tape & Reel (TR)
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7500+1.44 EUR
Mindestbestellmenge: 7500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BGA725L6E6327FTSA1 BGA725L6_V2+0.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433784a0400137ef9a4d341f23
BGA725L6E6327FTSA1
Hersteller: Infineon Technologies
Description: IC AMP GPS 1.55-1.615GHZ TSLP6-2
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: GPS/GNSS
Voltage - Supply: 1.5V ~ 3.6V
Gain: 20dB
Current - Supply: 3.6mA
Noise Figure: 0.65dB
P1dB: -16dBm
Supplier Device Package: TSLP-6-2
Part Status: Active
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BGA749N16E6327XTSA1 fundamentals-of-power-semiconductors
BGA749N16E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF AMP GPS 940MHZ TSNP7-1
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 940MHz
RF Type: General Purpose
Voltage - Supply: 3.6V
Gain: 16.1dB
Current - Supply: 10mA
Noise Figure: 1.2dB
Supplier Device Package: PG-TSNP-7-1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BGA 925L6 E6327 BGA925L6.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a3043327f13e30132a4db54e64337
BGA 925L6 E6327
Hersteller: Infineon Technologies
Description: IC AMP MMIC RF GNSS LNA TSLP-6
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BGB719N7ESDE6327XTMA1 fundamentals-of-power-semiconductors
BGB719N7ESDE6327XTMA1
Hersteller: Infineon Technologies
Description: IC RF AMP FM 10MHZ-1GHZ TSNP7-6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 10MHz ~ 1GHz
RF Type: FM
Voltage - Supply: 3V
Gain: 13.5dB
Current - Supply: 2.8mA
Noise Figure: 1.2dB
P1dB: -6dBm
Test Frequency: 100MHz
Supplier Device Package: PG-TSNP-7-6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BGM 1034N7 E6327 bgm1034N7.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a304334fac4c60134fafa93ce0011
BGM 1034N7 E6327
Hersteller: Infineon Technologies
Description: IC AMP MMIC RF 17.0DB TSNP-7
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BGS15AN16E6327XTSA1 BGS15AN16_v2_1.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433f1b26e8013f2d44cb463811
BGS15AN16E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH SP5T 3GHZ TSNP16-3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BGSF18DM20E6327XUMA1 fundamentals-of-power-semiconductors
BGSF18DM20E6327XUMA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH SP8T
Packaging: Tape & Reel (TR)
Circuit: SP8T
RF Type: Cellular, 3G, GSM
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ESD3V3S1B02LRHE6327XTSA1 ESD3V3S1B_ESD_Transient_Protection_Diode_Infineon.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a3043382e837301385c223ad03336
ESD3V3S1B02LRHE6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 3.3VWM 6.8VC TSLP2-17
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ESD3V3XU1USE6327XTSA1 ESD3V3XU1US.pdf
ESD3V3XU1USE6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 3.3VWM 11VC TSSLP-2-1
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSSLP-2-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.5V (Typ)
Voltage - Clamping (Max) @ Ipp: 11V (Typ)
Power Line Protection: No
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TVS3V3L4UE6327HTSA1 TVS3V3L4U_rev_2_2.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a3043382e837301385be7912532ed
TVS3V3L4UE6327HTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 3.3VWM 7.7VC PGSC746
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 20A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-SC74-6
Unidirectional Channels: 4
Bidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 7.7V (Typ)
Power Line Protection: No
auf Bestellung 54000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.37 EUR
6000+0.36 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BFP840ESDH6327XTSA1 Infineon-BFP840ESD-DS-v02_00-EN.pdf?fileId=5546d46265f064ff01663896bcab4eb6
BFP840ESDH6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 2.25V 80GHZ SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 18.5dB
Power - Max: 75mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 2.25V
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 1.8V
Frequency - Transition: 80GHz
Noise Figure (dB Typ @ f): 0.85dB @ 5.5GHz
Supplier Device Package: PG-SOT343-4-2
auf Bestellung 2640 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
22+0.96 EUR
32+0.67 EUR
36+0.6 EUR
100+0.52 EUR
250+0.48 EUR
500+0.46 EUR
1000+0.44 EUR
Mindestbestellmenge: 22 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BFP840FESDH6327XTSA1 Infineon-BFP840FESD-DS-v02_00-EN.pdf?fileId=5546d46265f064ff01663896c6294eb9
BFP840FESDH6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 2.6V 85GHZ 4TSFP-4
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 35dB
Power - Max: 75mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 2.6V
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 1.8V
Frequency - Transition: 85GHz
Noise Figure (dB Typ @ f): 0.75dB @ 5.5GHz
Supplier Device Package: PG-TSFP-4-1
auf Bestellung 80420 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
20+1.05 EUR
29+0.74 EUR
32+0.65 EUR
100+0.57 EUR
250+0.54 EUR
500+0.51 EUR
1000+0.49 EUR
Mindestbestellmenge: 20 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BFP842ESDH6327XTSA1 Infineon-BFP842ESD-DS-v02_00-EN.pdf?fileId=5546d46265f064ff01663896cf294ebc
BFP842ESDH6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 3.7V 60GHZ SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 26dB
Power - Max: 120mW
Current - Collector (Ic) (Max): 40mA
Voltage - Collector Emitter Breakdown (Max): 3.7V
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 15mA, 2.5V
Frequency - Transition: 60GHz
Noise Figure (dB Typ @ f): 0.65dB @ 3.5GHz
Supplier Device Package: PG-SOT343-4-2
Part Status: Active
auf Bestellung 5317 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
22+0.96 EUR
32+0.67 EUR
36+0.6 EUR
100+0.52 EUR
250+0.48 EUR
500+0.46 EUR
1000+0.44 EUR
Mindestbestellmenge: 22 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BGA725L6E6327FTSA1 BGA725L6_V2+0.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433784a0400137ef9a4d341f23
BGA725L6E6327FTSA1
Hersteller: Infineon Technologies
Description: IC AMP GPS 1.55-1.615GHZ TSLP6-2
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: GPS/GNSS
Voltage - Supply: 1.5V ~ 3.6V
Gain: 20dB
Current - Supply: 3.6mA
Noise Figure: 0.65dB
P1dB: -16dBm
Supplier Device Package: TSLP-6-2
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BGA749N16E6327XTSA1 fundamentals-of-power-semiconductors
BGA749N16E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF AMP GPS 940MHZ TSNP7-1
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 940MHz
RF Type: General Purpose
Voltage - Supply: 3.6V
Gain: 16.1dB
Current - Supply: 10mA
Noise Figure: 1.2dB
Supplier Device Package: PG-TSNP-7-1
auf Bestellung 7490 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+4.11 EUR
10+3.55 EUR
25+3.34 EUR
100+3.07 EUR
250+2.92 EUR
500+2.8 EUR
1000+2.69 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BGA 925L6 E6327 BGA925L6.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a3043327f13e30132a4db54e64337
BGA 925L6 E6327
Hersteller: Infineon Technologies
Description: IC AMP MMIC RF GNSS LNA TSLP-6
auf Bestellung 23159 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
BGB719N7ESDE6327XTMA1 fundamentals-of-power-semiconductors
BGB719N7ESDE6327XTMA1
Hersteller: Infineon Technologies
Description: IC RF AMP FM 10MHZ-1GHZ TSNP7-6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 10MHz ~ 1GHz
RF Type: FM
Voltage - Supply: 3V
Gain: 13.5dB
Current - Supply: 2.8mA
Noise Figure: 1.2dB
P1dB: -6dBm
Test Frequency: 100MHz
Supplier Device Package: PG-TSNP-7-6
auf Bestellung 2286 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
17+1.27 EUR
21+1 EUR
25+0.93 EUR
100+0.86 EUR
250+0.81 EUR
500+0.8 EUR
1000+0.77 EUR
Mindestbestellmenge: 17 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BGM 1034N7 E6327 bgm1034N7.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a304334fac4c60134fafa93ce0011
BGM 1034N7 E6327
Hersteller: Infineon Technologies
Description: IC AMP MMIC RF 17.0DB TSNP-7
auf Bestellung 16295 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
BGS15AN16E6327XTSA1 BGS15AN16_v2_1.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433f1b26e8013f2d44cb463811
BGS15AN16E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH SP5T 3GHZ TSNP16-3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ESD1P0RFWH6327XTSA1 esd1p0rfseries.pdf?folderId=db3a30431441fb5d01149221c9230fb2&fileId=db3a30431441fb5d01149228afda0fc7
ESD1P0RFWH6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 70VWM 15VC PGSOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet, HDMI, RF Antenna
Capacitance @ Frequency: 1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 70V (Max)
Supplier Device Package: PG-SOT323
Unidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 15V
Power Line Protection: No
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ESD3V3S1B02LRHE6327XTSA1 ESD3V3S1B_ESD_Transient_Protection_Diode_Infineon.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a3043382e837301385c223ad03336
ESD3V3S1B02LRHE6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 3.3VWM 6.8VC TSLP2-17
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ESD3V3XU1USE6327XTSA1 ESD3V3XU1US.pdf
ESD3V3XU1USE6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 3.3VWM 11VC TSSLP-2-1
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 11V (Typ)
Voltage - Breakdown (Min): 6.5V (Typ)
Unidirectional Channels: 1
Supplier Device Package: PG-TSSLP-2-1
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Capacitance @ Frequency: 0.4pF @ 1MHz
Applications: Ethernet, HDMI
Operating Temperature: -40°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TVS3V3L4UE6327HTSA1 TVS3V3L4U_rev_2_2.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a3043382e837301385be7912532ed
TVS3V3L4UE6327HTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 3.3VWM 7.7VC PGSC746
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 20A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-SC74-6
Unidirectional Channels: 4
Bidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 7.7V (Typ)
Power Line Protection: No
auf Bestellung 54821 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+1.93 EUR
18+1.2 EUR
100+0.79 EUR
500+0.61 EUR
1000+0.55 EUR
Mindestbestellmenge: 11 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BGA 925L6 E6327 BGA925L6.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a3043327f13e30132a4db54e64337
BGA 925L6 E6327
Hersteller: Infineon Technologies
Description: IC AMP MMIC RF GNSS LNA TSLP-6
auf Bestellung 23159 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
BGM 1034N7 E6327 bgm1034N7.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a304334fac4c60134fafa93ce0011
BGM 1034N7 E6327
Hersteller: Infineon Technologies
Description: IC AMP MMIC RF 17.0DB TSNP-7
auf Bestellung 16330 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
ESD3V3S1B02LRHE6327XTSA1 ESD3V3S1B_ESD_Transient_Protection_Diode_Infineon.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a3043382e837301385c223ad03336
ESD3V3S1B02LRHE6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 3.3VWM 6.8VC TSLP2-17
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAR5002VH6327XTSA1 bar50series.pdf?folderId=db3a304314dca3890114fea780a30a91&fileId=db3a304314dca3890114fea7dd410a92
BAR5002VH6327XTSA1
Hersteller: Infineon Technologies
Description: RF DIODE PIN 50V 250MW PG-SC79-2
Power Dissipation (Max): 250 mW
Current - Max: 100 mA
Part Status: Active
Supplier Device Package: PG-SC79-2
Voltage - Peak Reverse (Max): 50V
Resistance @ If, F: 4.5Ohm @ 10mA, 100MHz
Capacitance @ Vr, F: 0.4pF @ 5V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: PIN - Single
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
auf Bestellung 7132 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
84+0.25 EUR
124+0.17 EUR
142+0.14 EUR
167+0.13 EUR
250+0.11 EUR
500+0.11 EUR
1000+0.1 EUR
Mindestbestellmenge: 84 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BAR6306WH6327XTSA1 INFNS15694-1.pdf?t.download=true&u=5oefqw
BAR6306WH6327XTSA1
Hersteller: Infineon Technologies
Description: RF DIODE PIN 50V 250MW PG-SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT323
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAR6406E6327HTSA1 Infineon-BAR64-06-DS-v01_01-EN.pdf?fileId=5546d462689a790c01690f0300ea3908
BAR6406E6327HTSA1
Hersteller: Infineon Technologies
Description: RF DIODE PIN 150V 250MW PG-SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
auf Bestellung 8875 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
72+0.3 EUR
102+0.2 EUR
115+0.18 EUR
135+0.15 EUR
250+0.14 EUR
500+0.13 EUR
Mindestbestellmenge: 72 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BAR6502VH6327XTSA1 bar65series.pdf?folderId=db3a304314dca3890114fea780a30a91&fileId=db3a304314dca3890114ff1c81b50af0
BAR6502VH6327XTSA1
Hersteller: Infineon Technologies
Description: RF DIODE PIN 30V 250MW PG-SC79-2
Power Dissipation (Max): 250 mW
Current - Max: 100 mA
Part Status: Active
Supplier Device Package: PG-SC79-2
Voltage - Peak Reverse (Max): 30V
Resistance @ If, F: 900mOhm @ 10mA, 100MHz
Capacitance @ Vr, F: 0.8pF @ 3V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: PIN - Single
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
auf Bestellung 8092 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
91+0.23 EUR
136+0.15 EUR
155+0.13 EUR
184+0.11 EUR
250+0.1 EUR
500+0.099 EUR
1000+0.093 EUR
Mindestbestellmenge: 91 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BAR81WH6327XTSA1 bar81series.pdf?folderId=db3a304314dca3890114fea780a30a91&fileId=db3a304314dca3890114ff203eb70af2
BAR81WH6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE STANDAR 30V 100MW SOT343-4
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Diode Type: Standard - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.9pF @ 3V, 1MHz
Resistance @ If, F: 1Ohm @ 5mA, 100MHz
Voltage - Peak Reverse (Max): 30V
Supplier Device Package: PG-SOT343-4-2
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 100 mW
auf Bestellung 23058 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
18+1.18 EUR
26+0.82 EUR
29+0.74 EUR
100+0.64 EUR
250+0.6 EUR
500+0.57 EUR
1000+0.55 EUR
Mindestbestellmenge: 18 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BAR9002LSE6327XTSA1 bar90series.pdf
BAR9002LSE6327XTSA1
Hersteller: Infineon Technologies
Description: RF DIODE PIN 80V 150MW TSSLP-2
Supplier Device Package: PG-TSSLP-2-1
Voltage - Peak Reverse (Max): 80V
Resistance @ If, F: 800mOhm @ 10mA, 100MHz
Capacitance @ Vr, F: 0.35pF @ 1V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: PIN - Single
Package / Case: 0201 (0603 Metric)
Packaging: Cut Tape (CT)
Power Dissipation (Max): 150 mW
Current - Max: 100 mA
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAS3005A02VH6327XTSA1 Infineon-BAS3005ASERIES-DS-v01_01-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30432d9b3066012db872f12d0bb7
BAS3005A02VH6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 30V 500MA PGSC792
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 15pF @ 5V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: PG-SC79-2
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 500 mA
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
auf Bestellung 3048 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
23+0.94 EUR
37+0.57 EUR
100+0.36 EUR
500+0.27 EUR
1000+0.24 EUR
Mindestbestellmenge: 23 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BAT15099E6327HTSA1 INFNS15420-1.pdf?t.download=true&u=5oefqw
BAT15099E6327HTSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 4V 100MW SOT143-4
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT-143-3D
Part Status: Active
Current - Max: 110 mA
Power Dissipation (Max): 100 mW
auf Bestellung 2135 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
12+1.87 EUR
18+1.17 EUR
100+0.76 EUR
500+0.58 EUR
1000+0.54 EUR
Mindestbestellmenge: 12 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BAT1704WH6327XTSA1 Infineon-BAT17-04W-DS-v01_00-EN.pdf?fileId=5546d46265f064ff016638963bf54e8f
BAT1704WH6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 4V 150MW SOT323-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Diode Type: Schottky - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT323
Part Status: Active
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
auf Bestellung 10382 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
22+0.99 EUR
35+0.61 EUR
100+0.38 EUR
500+0.29 EUR
1000+0.26 EUR
Mindestbestellmenge: 22 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BAT1705WH6327XTSA1 BAT17_6-15-11.pdf
BAT1705WH6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 4V 150MW SOT323-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Diode Type: Schottky - 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT323
Part Status: Active
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
auf Bestellung 6639 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
22+0.99 EUR
35+0.61 EUR
100+0.38 EUR
500+0.29 EUR
1000+0.26 EUR
Mindestbestellmenge: 22 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BAT1706WH6327XTSA1 fundamentals-of-power-semiconductors
BAT1706WH6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 4V 150MW SOT323-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Diode Type: Schottky - 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT323
Part Status: Obsolete
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
BAT1804E6327HTSA1 bat18series.pdf?folderId=db3a304314dca3890114fde87a7a09ec&fileId=db3a304314dca3890114fe3a83ef0a87
BAT1804E6327HTSA1
Hersteller: Infineon Technologies
Description: RF DIODE PIN 35V PG-SOT23
Current - Reverse Leakage @ Vr: 20 nA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 35 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PG-SOT23
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Reverse Recovery Time (trr): 120 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Current - Max: 100 mA
Voltage - Peak Reverse (Max): 35V
Capacitance @ Vr, F: 1pF @ 20V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: PIN - 1 Pair Series Connection
auf Bestellung 12963 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
16+1.32 EUR
26+0.81 EUR
100+0.52 EUR
500+0.39 EUR
1000+0.36 EUR
Mindestbestellmenge: 16 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BAT68E6327HTSA1 infineon-bat68series-ds-en.pdf
BAT68E6327HTSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 8V 150MW SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Resistance @ If, F: 10Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 8V
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
auf Bestellung 10361 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
48+0.44 EUR
69+0.31 EUR
78+0.27 EUR
100+0.23 EUR
250+0.21 EUR
500+0.2 EUR
1000+0.19 EUR
Mindestbestellmenge: 48 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BAT6804E6327HTSA1 bat68series.pdf?folderId=db3a304314dca389011518104e5d0df2&fileId=db3a304314dca38901151819a1ab0df5
BAT6804E6327HTSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 8V 150MW SOT23-3
Power Dissipation (Max): 150 mW
Current - Max: 130 mA
Part Status: Active
Supplier Device Package: PG-SOT23
Voltage - Peak Reverse (Max): 8V
Resistance @ If, F: 10Ohm @ 5mA, 10kHz
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: Schottky - 1 Pair Series Connection
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 17346 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
40+0.52 EUR
58+0.36 EUR
66+0.32 EUR
100+0.27 EUR
250+0.25 EUR
500+0.24 EUR
1000+0.23 EUR
Mindestbestellmenge: 40 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BAT6804WH6327XTSA1 bat68series.pdf?folderId=db3a304314dca389011518104e5d0df2&fileId=db3a304314dca38901151819a1ab0df5
BAT6804WH6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 8V 150MW SOT323-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Diode Type: Schottky - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Resistance @ If, F: 10Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 8V
Supplier Device Package: PG-SOT323
Part Status: Active
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
auf Bestellung 12125 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
13+1.74 EUR
20+1.08 EUR
100+0.7 EUR
500+0.54 EUR
1000+0.49 EUR
Mindestbestellmenge: 13 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BAT6806WH6327XTSA1 bat68series.pdf?folderId=db3a304314dca389011518104e5d0df2&fileId=db3a304314dca38901151819a1ab0df5
BAT6806WH6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 8V 150MW SOT323-3
Power Dissipation (Max): 150 mW
Current - Max: 130 mA
Part Status: Obsolete
Supplier Device Package: PG-SOT323
Voltage - Peak Reverse (Max): 8V
Resistance @ If, F: 10Ohm @ 5mA, 10kHz
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: Schottky - 1 Pair Common Anode
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BFP181E7764HTSA1 bfp181.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef6801142665c77b0601&location=.en.product.findProductTypeByName.html_dgdl_bfp181.pdf
BFP181E7764HTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 12V 8GHZ SOT-143-3D
Part Status: Active
Supplier Device Package: PG-SOT-143-3D
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Frequency - Transition: 8GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 70mA, 8V
Voltage - Collector Emitter Breakdown (Max): 12V
Current - Collector (Ic) (Max): 20mA
Power - Max: 175mW
Gain: 17.5dB ~ 21dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Packaging: Cut Tape (CT)
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
BFP183WH6327XTSA1 bfp183w.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef6801142672e8cd0613
BFP183WH6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 12V 8.5GHZ SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 22dB
Power - Max: 450mW
Current - Collector (Ic) (Max): 65mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
Frequency - Transition: 8.5GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BFP420FH6327XTSA1 Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920
BFP420FH6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 5.5V 25GHZ 4-TSFP
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 19.5dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 5.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Supplier Device Package: 4-TSFP
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BFP520H6327XTSA1 Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920
BFP520H6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 3.5V 45GHZ SOT-343
Part Status: Active
Supplier Device Package: PG-SOT343-3D
Noise Figure (dB Typ @ f): 0.95dB @ 1.8GHz
Frequency - Transition: 45GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 20mA, 2V
Voltage - Collector Emitter Breakdown (Max): 3.5V
Current - Collector (Ic) (Max): 40mA
Power - Max: 100mW
Gain: 22.5dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Packaging: Cut Tape (CT)
auf Bestellung 6196 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
23+0.92 EUR
33+0.64 EUR
37+0.57 EUR
100+0.5 EUR
250+0.46 EUR
500+0.44 EUR
1000+0.43 EUR
Mindestbestellmenge: 23 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BFP520FH6327XTSA1 Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920
BFP520FH6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 3.5V 45GHZ 4-TSFP
Part Status: Active
Packaging: Cut Tape (CT)
Supplier Device Package: 4-TSFP
Noise Figure (dB Typ @ f): 0.95dB @ 1.8GHz
Frequency - Transition: 45GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 20mA, 2V
Voltage - Collector Emitter Breakdown (Max): 3.5V
Current - Collector (Ic) (Max): 40mA
Power - Max: 100mW
Gain: 22.5dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BFP620FH7764XTSA1 Infineon-BFP620F-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f03a08d3926
BFP620FH7764XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 2.8V 65GHZ 4-TSFP
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21dB ~ 10dB
Power - Max: 185mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 2.8V
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 50mA, 1.5V
Frequency - Transition: 65GHz
Noise Figure (dB Typ @ f): 0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz
Supplier Device Package: 4-TSFP
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 196 197 198 199 200 201 202 203 204 205 206 207 414 621 828 1035 1242 1449 1656 1863 2070 2078  [ Nächste Seite >> ]