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IPB019N08N3GATMA1 IPB019N08N3GATMA1 Infineon Technologies IPB019N08N3_Rev2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431add1d95011ae87fdf90569f Description: MOSFET N-CH 80V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 270µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 40 V
auf Bestellung 3033 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.33 EUR
10+7.58 EUR
50+5.97 EUR
100+5.45 EUR
500+5 EUR
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IPB025N08N3GATMA1 IPB025N08N3GATMA1 Infineon Technologies IPB025N08N3_Rev1.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304317a748360117d35658bc066b Description: MOSFET N-CH 80V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 270µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 40 V
auf Bestellung 8019 Stücke:
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3+10.36 EUR
10+6.9 EUR
100+4.94 EUR
500+4.44 EUR
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IPB027N10N3GATMA1 IPB027N10N3GATMA1 Infineon Technologies IPB027N10N3+G_Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431ce5fb52011d1ed9348e15ef Description: MOSFET N-CH 100V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 275µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14800 pF @ 50 V
auf Bestellung 8919 Stücke:
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2+12.26 EUR
10+8.2 EUR
50+6.46 EUR
100+5.9 EUR
500+5.13 EUR
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IPB072N15N3GATMA1 IPB072N15N3GATMA1 Infineon Technologies IPP075N15N3+G_Rev2.03.pdf?folderId=db3a304313b8b5a60113cee7c66a02d6&fileId=db3a304319c6f18c0119cd76cc527ab6 Description: MOSFET N-CH 150V 100A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5470 pF @ 75 V
auf Bestellung 12366 Stücke:
Lieferzeit 10-14 Tag (e)
3+9.37 EUR
10+6.2 EUR
50+4.84 EUR
100+4.4 EUR
500+3.86 EUR
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IPB50R140CPATMA1 IPB50R140CPATMA1 Infineon Technologies IPB50R140CP_rev2.0.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d4eb4484f Description: MOSFET N-CH 550V 23A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 14A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 930µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 100 V
auf Bestellung 1346 Stücke:
Lieferzeit 10-14 Tag (e)
3+9.84 EUR
10+6.52 EUR
50+5.09 EUR
100+4.63 EUR
500+3.82 EUR
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IPB60R199CPATMA1 IPB60R199CPATMA1 Infineon Technologies IPB60R199CP_rev2.1.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42e76a449cf Description: MOSFET N-CH 600V 16A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 9.9A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 660µA
Supplier Device Package: PG-TO263-3-2
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 100 V
auf Bestellung 2975 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.94 EUR
10+5.22 EUR
100+3.69 EUR
500+3.4 EUR
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IPB80N08S2L07ATMA1 IPB80N08S2L07ATMA1 Infineon Technologies Infineon-IPP_B80N08S2L_07_GREEN-DS-v01_01-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b426e2333ae3&ack=t Description: MOSFET N-CH 75V 80A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 233 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 60 Stücke:
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3+10.25 EUR
10+6.84 EUR
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IPD031N06L3GATMA1 IPD031N06L3GATMA1 Infineon Technologies IPD031N06L3_Rev2.0.pdf?folderId=db3a30431441fb5d01148ca9f1be0e77&fileId=db3a30431ddc9372011e2a9f6a9d4d02 Description: MOSFET N-CH 60V 100A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 93µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
auf Bestellung 57314 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.81 EUR
10+3.76 EUR
50+2.88 EUR
100+2.59 EUR
500+2.09 EUR
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IPD25CN10NGBUMA1 IPD25CN10NGBUMA1 Infineon Technologies Infineon-IPP26CN10N-DS-v01_09-en.pdf?fileId=db3a304412b407950112b42b420244aa Description: MOSFET N-CH 100V 35A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 35A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 39µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2070 pF @ 50 V
Produkt ist nicht verfügbar
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IPD30N06S2-15 IPD30N06S2-15 Infineon Technologies IPD30N06S2-15_green.pdf?folderId=db3a304412b407950112b4322c6d574b&fileId=db3a304412b407950112b433e70a5e0a Description: MOSFET N-CH 55V 30A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 14.7mOhm @ 30A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-TO252-3-11
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1485 pF @ 25 V
Produkt ist nicht verfügbar
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IPD30N06S2L-13 IPD30N06S2L-13 Infineon Technologies Infineon-IPD30N06S2L_13-DS-v01_00-en.pdf?folderId=db3a304412b407950112b4322c6d574b&fileId=db3a304412b407950112b433ba8d5d65&ack=t Description: MOSFET N-CH 55V 30A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 30A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2V @ 80µA
Supplier Device Package: PG-TO252-3-11
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Produkt ist nicht verfügbar
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IPD30N08S2L21ATMA1 IPD30N08S2L21ATMA1 Infineon Technologies Infineon-IPD30N08S2L_21-DS-v01_00-en.pdf?fileId=db3a304412b407950112b426f6a33b23&ack=t Description: MOSFET N-CH 75V 30A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 25A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2V @ 80µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 18962 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.62 EUR
11+2.01 EUR
100+1.69 EUR
500+1.59 EUR
1000+1.43 EUR
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IPD78CN10NGBUMA1 IPD78CN10NGBUMA1 Infineon Technologies Infineon-IPP80CN10N-DS-v01_91-en.pdf?fileId=db3a304412b407950112b42c2aaf468d Description: MOSFET N-CH 100V 13A TO252-3
auf Bestellung 24 Stücke:
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IPL60R199CPAUMA1 IPL60R199CPAUMA1 Infineon Technologies IPL60R199CP_2_0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043284aacd801284dca135b29ba Description: MOSFET N-CH 600V 16.4A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.4A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 9.9A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 660µA
Supplier Device Package: PG-VSON-4
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 100 V
auf Bestellung 9783 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.16 EUR
10+5.38 EUR
50+4.18 EUR
100+3.78 EUR
500+3.21 EUR
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ITS711L1FUMA1 ITS711L1FUMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IC PWR SWITCH N-CHAN 1:1 DSO-20
Features: Auto Restart, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 165mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-20-31
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
auf Bestellung 2913 Stücke:
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3+9.64 EUR
10+7.34 EUR
25+6.77 EUR
100+6.14 EUR
250+5.88 EUR
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KP235XTMA1 KP235XTMA1 Infineon Technologies KP235_DS_Rev_1.0.pdf?folderId=db3a30431d8a6b3c011dd8fc5a954267&fileId=db3a30432ad629a6012af67ba47c0b0f Description: SENSOR 16.68PSIA 4.5V DSOF8-16
Features: Amplified Output, Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: 8-SMD Module
Output Type: Analog Voltage
Mounting Type: Surface Mount
Output: 0.5 V ~ 4.5 V
Operating Pressure: 5.8PSI ~ 16.68PSI (40kPa ~ 115kPa)
Pressure Type: Absolute
Accuracy: ±0.348PSI (±2.4kPa)
Operating Temperature: -40°C ~ 125°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Applications: Board Mount
Port Style: No Port
Maximum Pressure: 21.76PSI (150kPa)
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 7949 Stücke:
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3+9.48 EUR
5+8.52 EUR
10+8.16 EUR
25+7.74 EUR
50+7.44 EUR
100+7.16 EUR
500+6.63 EUR
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C167CRL33MHAKXQLA1 C167CRL33MHAKXQLA1 Infineon Technologies Infineon-C167CR-DS-v03_03-en%5B1%5D.pdf?fileId=db3a304412b407950112b41daf9f30b4&ack=t Description: IC MCU 16BIT ROMLESS 144MQFP
Packaging: Tray
Package / Case: 144-BQFP
Mounting Type: Surface Mount
Speed: 33MHz
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-144-8
Part Status: Discontinued at Digi-Key
Number of I/O: 111
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SMBTA06UPNE6327HTSA1 SMBTA06UPNE6327HTSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: TRANS NPN/PNP 80V 500MA PG-SC74
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 330mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SC74-6
Part Status: Last Time Buy
Produkt ist nicht verfügbar
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SPD07N20 G SPD07N20 G Infineon Technologies spd07n20_Rev+2.4.pdf?folderId=db3a30431a5c32f2011a809773886508&fileId=db3a30431f848401011fc73c3e60796a Description: MOSFET N-CH 200V 7A TO252
auf Bestellung 11517 Stücke:
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SPD09P06PLGBTMA1 SPD09P06PLGBTMA1 Infineon Technologies SPD09P06PL+Rev2.5.pdf?folderId=db3a30431ed1d7b2011f4042f2ff4ec5&fileId=db3a30431ed1d7b2011f40486c6a4ed4 Description: MOSFET P-CH 60V 9.7A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6.8A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO252-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
Qualification: AEC-Q101
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SPD18P06PGBTMA1 SPD18P06PGBTMA1 Infineon Technologies SPD18P06P_Rev.3.4.pdf?folderId=db3a30431ed1d7b2011f4042f2ff4ec5&fileId=db3a30431ed1d7b2011f404c85eb4ee3 Description: MOSFET P-CH 60V 18.6A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18.6A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13.2A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-TO252-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Qualification: AEC-Q101
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SPD30P06PGBTMA1 SPD30P06PGBTMA1 Infineon Technologies SPD30P06P_Rev.2.3.pdf?folderId=db3a30431ed1d7b2011f4042f2ff4ec5&fileId=db3a30431ed1d7b2011f404fbc7e4ef4 Description: MOSFET P-CH 60V 30A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 21.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.7mA
Supplier Device Package: PG-TO252-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1535 pF @ 25 V
Qualification: AEC-Q101
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TCA3727GXUMA1 TCA3727GXUMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IC MTR DRV BIPOLR 4.5-6.5V 24DSO
Packaging: Cut Tape (CT)
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1A
Interface: Parallel
Operating Temperature: -40°C ~ 110°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.5V ~ 6.5V
Applications: General Purpose
Technology: Bipolar
Voltage - Load: 5V ~ 50V
Supplier Device Package: PG-DSO-24-3
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Step Resolution: 1, 1/2, 1/4
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLE4241GM TLE4241GM Infineon Technologies TLE4241_DS_13%5B1%5D.pdf?folderId=db3a30431400ef68011421b54e2e0564&fileId=db3a30431ddc9372011ebaad49bf7f26&ack=t Description: IC LED DRVR LINEAR PWM 60MA 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 60mA
Internal Switch(s): Yes
Supplier Device Package: PG-DSO-8-9
Dimming: PWM
Voltage - Supply (Min): 4V
Voltage - Supply (Max): 45V
Produkt ist nicht verfügbar
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TLE42744DV50ATMA1 TLE42744DV50ATMA1 Infineon Technologies Infineon-TLE42744D%20V50-DataSheet-v01_40-EN.pdf?fileId=8ac78c8c93dda25b019519be417f740f Description: IC REG LIN 5V 400MA PG-TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-3
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Qualification: AEC-Q100
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TLE4295GV50HTSA1 TLE4295GV50HTSA1 Infineon Technologies Infineon-TLE4295-DS-v01_40-EN.pdf?fileId=5546d46258fc0bc101595f8575241f74 Description: IC REG LIN 5V 30MA PG-SCT595-5
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 30mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5
Voltage - Output (Min/Fixed): 5V
Control Features: Power Fail
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.4V @ 20mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 4 mA
Qualification: AEC-Q100
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TLE4906KHTSA1 TLE4906KHTSA1 Infineon Technologies Infineon-TLE4906L-DataSheet-v02_10-EN.pdf?fileId=db3a304316f66ee8011754425fe50642 Description: MAGNETIC SWITCH UNIPOLAR SC59
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 13.5mT Trip, 5mT Release
Current - Output (Max): 20mA
Current - Supply (Max): 6mA
Supplier Device Package: PG-SC59-3
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
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TLE4941PLUSC TLE4941PLUSC Infineon Technologies Infineon-TLE4941-DS-v01_01-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30433899edae0138c3cb0f870330 Description: IC HALL EFFECT SENSOR SSO2-53
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TLE49462KHTSA1 TLE49462KHTSA1 Infineon Technologies TLE4946-2K_DS_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a30431f848401011fbc925c48637f Description: MAGNETIC SWITCH LATCH SC59
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Surface Mount
Function: Latch
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 3.5mT Trip, -3.5mT Release
Current - Output (Max): 20mA
Current - Supply (Max): 6mA
Supplier Device Package: PG-SC59-3
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
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TLE62512GXUMA1 TLE62512GXUMA1 Infineon Technologies Infineon-TLE6251-2G-DS-v01_20-EN.pdf?fileId=5546d4625996c0c30159a766fb9977b8 Description: IC TRANSCEIVER HALF 1/1 DSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Protocol: CANbus
Supplier Device Package: PG-DSO-14-24
Receiver Hysteresis: 100 mV
Duplex: Half
Part Status: Not For New Designs
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TLE6368G2AUMA1 TLE6368G2AUMA1 Infineon Technologies Infineon-TLE6368G2-DS-v02_32-EN.pdf?fileId=5546d46258fc0bc1015969d24ffd41c4 Description: IC REG AUTO APPL 3OUT DSO-36
Packaging: Cut Tape (CT)
Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
Voltage - Output: 2.6V, 3.3V, 5V
Mounting Type: Surface Mount
Number of Outputs: 3
Voltage - Input: 5.5V ~ 60V
Operating Temperature: -40°C ~ 150°C
Applications: Power Supply, Automotive Applications
Supplier Device Package: PG-DSO-36-26
Grade: Automotive
Part Status: Not For New Designs
Qualification: AEC-Q100
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TLE6389-2GV TLE6389-2GV Infineon Technologies TLE6389-2-3_DS_21.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b43641bf65a6 Description: IC REG CTRLR BUCK 14DSO
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TLV4906K TLV4906K Infineon Technologies TLV4906x_DS_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a304320d39d590121544295e605cd Description: IC HALL EFFECT SW SC59-3
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BTS721L1XUMA1 BTS721L1XUMA1 Infineon Technologies Infineon-BTS721L1-DS-v01_03-EN.pdf?fileId=5546d4625a888733015aa3ac546f0ff9 Description: IC PWR SWITCH N-CHAN 1:1 DSO-20
Features: Auto Restart, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 85mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-20
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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BAS7002WH6327XTSA1 BAS7002WH6327XTSA1 Infineon Technologies bas70_bas170series.pdf?folderId=db3a30431400ef68011425f1ca2505e3&fileId=db3a304314dca389011518ad41680e12 Description: DIODE SCHOTTKY 70V 70MA SCD80-2
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BSC014N03MS G BSC014N03MS G Infineon Technologies BSC014N03MSG_rev1.2.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a304319c6f18c011a38f5a96704e8 Description: MOSFET N-CH 30V 100A TDSON-8
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BSC016N03LS G BSC016N03LS G Infineon Technologies BSC016N03LS_rev1.28.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42761a13c1b Description: MOSFET N-CH 30V 100A TDSON8
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IDD04S60C IDD04S60C Infineon Technologies IDD04S60C_2.0.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b439f8d36f1a Description: DIODE SCHOTTKY 600V 5.6A TO252-3
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SAK-C167CR-L33M HA+ SAK-C167CR-L33M HA+ Infineon Technologies c167cr_ds_v3.3_2005_02.pdf?folderId=db3a304412b407950112b41daf4330b3&fileId=db3a304412b407950112b41daf9f30b4 Description: IC MCU 16BIT 2KB XRAM 144MQFP
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SPD07N20 G SPD07N20 G Infineon Technologies spd07n20_Rev+2.4.pdf?folderId=db3a30431a5c32f2011a809773886508&fileId=db3a30431f848401011fc73c3e60796a Description: MOSFET N-CH 200V 7A TO252
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TLE6389-2GV TLE6389-2GV Infineon Technologies TLE6389-2-3_DS_21.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b43641bf65a6 Description: IC REG CTRLR BUCK 14DSO
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TLV4906K TLV4906K Infineon Technologies TLV4906x_DS_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a304320d39d590121544295e605cd Description: IC HALL EFFECT SW SC59-3
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SPD03N50C3 SPD03N50C3 Infineon Technologies Infineon-SPD03N50C3-DS-v02_06-en.pdf?fileId=db3a30433f12d084013f144a43c7038b description Description: MOSFET N-CH 560V 3.2A DPAK
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IRFHM831TRPBF IRFHM831TRPBF Infineon Technologies irfhm831pbf.pdf?fileId=5546d462533600a4015356233dba1f49 Description: MOSFET N-CH 30V 14A/40A PQFN
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Part Status: Obsolete
Supplier Device Package: PQFN (3x3)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Power Dissipation (Max): 2.5W (Ta), 27W (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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IRFHM8329TRPBF IRFHM8329TRPBF Infineon Technologies irfhm8329pbf.pdf?fileId=5546d462533600a4015356234f3d1f4d Description: MOSFET N-CH 30V 16A/57A PQFN
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PQFN (3x3)
Vgs(th) (Max) @ Id: 2.2V @ 25µA
Power Dissipation (Max): 2.6W (Ta), 33W (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 57A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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AM29F002BT-55JF Infineon Technologies AM29F002B_NB.pdf Description: IC FLASH 2MBIT PARALLEL 32PLCC
Packaging: Tube
Package / Case: 32-LCC (J-Lead)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.75V ~ 5.25V
Technology: FLASH
Memory Format: FLASH
Supplier Device Package: 32-PLCC (11.43x13.97)
Part Status: Obsolete
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 256K x 8
DigiKey Programmable: Not Verified
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S25FL032P0XBHI020 S25FL032P0XBHI020 Infineon Technologies Infineon-S25FL032P_32-Mbit_3.0_V_Flash_Memory-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed4e2dd5369&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 32MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
DigiKey Programmable: Not Verified
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S25FL032P0XMFI011 S25FL032P0XMFI011 Infineon Technologies Infineon-S25FL032P_32-Mbit_3.0_V_Flash_Memory-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed4e2dd5369&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 32MBIT SPI/QUAD 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
DigiKey Programmable: Verified
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S25FL032P0XNFI000 S25FL032P0XNFI000 Infineon Technologies Infineon-S25FL032P_32-Mbit_3.0_V_Flash_Memory-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed4e2dd5369&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 32MBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
DigiKey Programmable: Not Verified
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S25FL032P0XNFI001 S25FL032P0XNFI001 Infineon Technologies Infineon-S25FL032P_32-Mbit_3.0_V_Flash_Memory-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed4e2dd5369&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 32MBIT SPI/QUAD 8WSON
Packaging: Tube
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25FL032P0XNFI011 S25FL032P0XNFI011 Infineon Technologies Infineon-S25FL032P_32-Mbit_3.0_V_Flash_Memory-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed4e2dd5369&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 32MBIT SPI/QUAD 8USON
Packaging: Tube
Package / Case: 8-UDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-USON (5x6)
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25FL128SAGBHI210 S25FL128SAGBHI210 Infineon Technologies Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
auf Bestellung 650 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.38 EUR
10+7.43 EUR
25+7.08 EUR
40+6.91 EUR
80+6.66 EUR
338+6.19 EUR
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S25FL128SAGMFI011 S25FL128SAGMFI011 Infineon Technologies Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Description: IC FLASH 128MBIT SPI/QUAD 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Verified
auf Bestellung 671 Stücke:
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3+8.9 EUR
10+8.08 EUR
47+7.87 EUR
94+7.04 EUR
282+7.02 EUR
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S25FL129P0XBHI200 S25FL129P0XBHI200 Infineon Technologies Infineon-S25FL129P_128-Mbit_3.0_V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5008a53b6&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Memory Organization: 16M x 8
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 5µs, 3ms
Part Status: Obsolete
Supplier Device Package: 24-BGA (8x6)
Memory Format: FLASH
Clock Frequency: 104 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 128Mbit
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Tray
auf Bestellung 1193 Stücke:
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3+8.57 EUR
10+7.77 EUR
25+7.6 EUR
40+7.56 EUR
80+6.78 EUR
338+6.76 EUR
676+6.51 EUR
1014+6.19 EUR
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S25FL129P0XBHI300 S25FL129P0XBHI300 Infineon Technologies Infineon-S25FL129P_128-Mbit_3.0_V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5008a53b6&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Memory Organization: 16M x 8
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 5µs, 3ms
Part Status: Obsolete
Supplier Device Package: 24-BGA (6x8)
Memory Format: FLASH
Clock Frequency: 104 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 128Mbit
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Tray
auf Bestellung 5067 Stücke:
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3+8.57 EUR
10+7.77 EUR
25+7.6 EUR
40+7.56 EUR
80+6.78 EUR
338+6.76 EUR
676+6.51 EUR
1014+6.19 EUR
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S25FL129P0XBHI303 S25FL129P0XBHI303 Infineon Technologies Infineon-S25FL129P_128-Mbit_3.0_V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5008a53b6&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 128MBIT SPI/QUAD 24BGA
DigiKey Programmable: Not Verified
Memory Organization: 16M x 8
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 5µs, 3ms
Supplier Device Package: 24-BGA (6x8)
Memory Format: FLASH
Clock Frequency: 104 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 128Mbit
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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S25FL204K0TMFI010 S25FL204K0TMFI010 Infineon Technologies Infineon-S25FL204K_4-Mbit_3.0_V_SPI_Flash_Memory-AdditionalTechnicalInformation-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed4ea6f537a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 4MBIT SPI 85MHZ 8SOIC
Memory Type: Non-Volatile
Memory Size: 4Mbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Packaging: Tray
Memory Organization: 512K x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 5ms
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Memory Format: FLASH
Clock Frequency: 85 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Produkt ist nicht verfügbar
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S25FL256SAGBHI210 S25FL256SAGBHI210 Infineon Technologies Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Description: IC FLASH 256MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
auf Bestellung 3311 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.56 EUR
10+9.65 EUR
25+9.46 EUR
40+9.39 EUR
80+8.43 EUR
338+8.4 EUR
676+7.87 EUR
1014+7.53 EUR
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S25FL256SAGBHIY00 S25FL256SAGBHIY00 Infineon Technologies Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Description: IC FLASH 256MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25FL256SAGMFI011 S25FL256SAGMFI011 Infineon Technologies 001-98283%20Rev%20T.pdf Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
auf Bestellung 154 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.86 EUR
10+10.14 EUR
47+9.63 EUR
94+9.4 EUR
141+9.26 EUR
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IPB019N08N3GATMA1 IPB019N08N3_Rev2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431add1d95011ae87fdf90569f
IPB019N08N3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 270µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 40 V
auf Bestellung 3033 Stücke:
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AnzahlPrivatkunde
2+11.33 EUR
10+7.58 EUR
50+5.97 EUR
100+5.45 EUR
500+5 EUR
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IPB025N08N3GATMA1 IPB025N08N3_Rev1.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304317a748360117d35658bc066b
IPB025N08N3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 270µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 40 V
auf Bestellung 8019 Stücke:
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AnzahlPrivatkunde
3+10.36 EUR
10+6.9 EUR
100+4.94 EUR
500+4.44 EUR
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IPB027N10N3GATMA1 IPB027N10N3+G_Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431ce5fb52011d1ed9348e15ef
IPB027N10N3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 275µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14800 pF @ 50 V
auf Bestellung 8919 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+12.26 EUR
10+8.2 EUR
50+6.46 EUR
100+5.9 EUR
500+5.13 EUR
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IPB072N15N3GATMA1 IPP075N15N3+G_Rev2.03.pdf?folderId=db3a304313b8b5a60113cee7c66a02d6&fileId=db3a304319c6f18c0119cd76cc527ab6
IPB072N15N3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 100A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5470 pF @ 75 V
auf Bestellung 12366 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.37 EUR
10+6.2 EUR
50+4.84 EUR
100+4.4 EUR
500+3.86 EUR
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IPB50R140CPATMA1 IPB50R140CP_rev2.0.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d4eb4484f
IPB50R140CPATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 550V 23A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 14A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 930µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 100 V
auf Bestellung 1346 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.84 EUR
10+6.52 EUR
50+5.09 EUR
100+4.63 EUR
500+3.82 EUR
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IPB60R199CPATMA1 IPB60R199CP_rev2.1.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42e76a449cf
IPB60R199CPATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 16A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 9.9A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 660µA
Supplier Device Package: PG-TO263-3-2
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 100 V
auf Bestellung 2975 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.94 EUR
10+5.22 EUR
100+3.69 EUR
500+3.4 EUR
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IPB80N08S2L07ATMA1 Infineon-IPP_B80N08S2L_07_GREEN-DS-v01_01-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b426e2333ae3&ack=t
IPB80N08S2L07ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 80A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 233 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 60 Stücke:
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AnzahlPrivatkunde
3+10.25 EUR
10+6.84 EUR
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IPD031N06L3GATMA1 IPD031N06L3_Rev2.0.pdf?folderId=db3a30431441fb5d01148ca9f1be0e77&fileId=db3a30431ddc9372011e2a9f6a9d4d02
IPD031N06L3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 100A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 93µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
auf Bestellung 57314 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.81 EUR
10+3.76 EUR
50+2.88 EUR
100+2.59 EUR
500+2.09 EUR
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IPD25CN10NGBUMA1 Infineon-IPP26CN10N-DS-v01_09-en.pdf?fileId=db3a304412b407950112b42b420244aa
IPD25CN10NGBUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 35A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 35A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 39µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2070 pF @ 50 V
Produkt ist nicht verfügbar
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IPD30N06S2-15 IPD30N06S2-15_green.pdf?folderId=db3a304412b407950112b4322c6d574b&fileId=db3a304412b407950112b433e70a5e0a
IPD30N06S2-15
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 30A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 14.7mOhm @ 30A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-TO252-3-11
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1485 pF @ 25 V
Produkt ist nicht verfügbar
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IPD30N06S2L-13 Infineon-IPD30N06S2L_13-DS-v01_00-en.pdf?folderId=db3a304412b407950112b4322c6d574b&fileId=db3a304412b407950112b433ba8d5d65&ack=t
IPD30N06S2L-13
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 30A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 30A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2V @ 80µA
Supplier Device Package: PG-TO252-3-11
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Produkt ist nicht verfügbar
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IPD30N08S2L21ATMA1 Infineon-IPD30N08S2L_21-DS-v01_00-en.pdf?fileId=db3a304412b407950112b426f6a33b23&ack=t
IPD30N08S2L21ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 30A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 25A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2V @ 80µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 18962 Stücke:
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8+2.62 EUR
11+2.01 EUR
100+1.69 EUR
500+1.59 EUR
1000+1.43 EUR
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IPD78CN10NGBUMA1 Infineon-IPP80CN10N-DS-v01_91-en.pdf?fileId=db3a304412b407950112b42c2aaf468d
IPD78CN10NGBUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 13A TO252-3
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IPL60R199CPAUMA1 IPL60R199CP_2_0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043284aacd801284dca135b29ba
IPL60R199CPAUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 16.4A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.4A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 9.9A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 660µA
Supplier Device Package: PG-VSON-4
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 100 V
auf Bestellung 9783 Stücke:
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3+8.16 EUR
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50+4.18 EUR
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ITS711L1FUMA1 fundamentals-of-power-semiconductors
ITS711L1FUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-20
Features: Auto Restart, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 165mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-20-31
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
auf Bestellung 2913 Stücke:
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3+9.64 EUR
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25+6.77 EUR
100+6.14 EUR
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KP235XTMA1 KP235_DS_Rev_1.0.pdf?folderId=db3a30431d8a6b3c011dd8fc5a954267&fileId=db3a30432ad629a6012af67ba47c0b0f
KP235XTMA1
Hersteller: Infineon Technologies
Description: SENSOR 16.68PSIA 4.5V DSOF8-16
Features: Amplified Output, Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: 8-SMD Module
Output Type: Analog Voltage
Mounting Type: Surface Mount
Output: 0.5 V ~ 4.5 V
Operating Pressure: 5.8PSI ~ 16.68PSI (40kPa ~ 115kPa)
Pressure Type: Absolute
Accuracy: ±0.348PSI (±2.4kPa)
Operating Temperature: -40°C ~ 125°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Applications: Board Mount
Port Style: No Port
Maximum Pressure: 21.76PSI (150kPa)
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 7949 Stücke:
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3+9.48 EUR
5+8.52 EUR
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25+7.74 EUR
50+7.44 EUR
100+7.16 EUR
500+6.63 EUR
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C167CRL33MHAKXQLA1 Infineon-C167CR-DS-v03_03-en%5B1%5D.pdf?fileId=db3a304412b407950112b41daf9f30b4&ack=t
C167CRL33MHAKXQLA1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT ROMLESS 144MQFP
Packaging: Tray
Package / Case: 144-BQFP
Mounting Type: Surface Mount
Speed: 33MHz
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-144-8
Part Status: Discontinued at Digi-Key
Number of I/O: 111
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SMBTA06UPNE6327HTSA1 fundamentals-of-power-semiconductors
SMBTA06UPNE6327HTSA1
Hersteller: Infineon Technologies
Description: TRANS NPN/PNP 80V 500MA PG-SC74
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 330mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SC74-6
Part Status: Last Time Buy
Produkt ist nicht verfügbar
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SPD07N20 G spd07n20_Rev+2.4.pdf?folderId=db3a30431a5c32f2011a809773886508&fileId=db3a30431f848401011fc73c3e60796a
SPD07N20 G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 7A TO252
auf Bestellung 11517 Stücke:
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SPD09P06PLGBTMA1 SPD09P06PL+Rev2.5.pdf?folderId=db3a30431ed1d7b2011f4042f2ff4ec5&fileId=db3a30431ed1d7b2011f40486c6a4ed4
SPD09P06PLGBTMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 9.7A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6.8A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO252-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3941 Stücke:
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9+2.56 EUR
14+1.61 EUR
100+1.06 EUR
500+0.83 EUR
1000+0.75 EUR
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SPD18P06PGBTMA1 SPD18P06P_Rev.3.4.pdf?folderId=db3a30431ed1d7b2011f4042f2ff4ec5&fileId=db3a30431ed1d7b2011f404c85eb4ee3
SPD18P06PGBTMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 18.6A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18.6A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13.2A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-TO252-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SPD30P06PGBTMA1 SPD30P06P_Rev.2.3.pdf?folderId=db3a30431ed1d7b2011f4042f2ff4ec5&fileId=db3a30431ed1d7b2011f404fbc7e4ef4
SPD30P06PGBTMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 30A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 21.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.7mA
Supplier Device Package: PG-TO252-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1535 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 15627 Stücke:
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5+4.49 EUR
10+2.88 EUR
100+1.96 EUR
500+1.57 EUR
1000+1.56 EUR
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TCA3727GXUMA1 fundamentals-of-power-semiconductors
TCA3727GXUMA1
Hersteller: Infineon Technologies
Description: IC MTR DRV BIPOLR 4.5-6.5V 24DSO
Packaging: Cut Tape (CT)
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1A
Interface: Parallel
Operating Temperature: -40°C ~ 110°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.5V ~ 6.5V
Applications: General Purpose
Technology: Bipolar
Voltage - Load: 5V ~ 50V
Supplier Device Package: PG-DSO-24-3
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Step Resolution: 1, 1/2, 1/4
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLE4241GM TLE4241_DS_13%5B1%5D.pdf?folderId=db3a30431400ef68011421b54e2e0564&fileId=db3a30431ddc9372011ebaad49bf7f26&ack=t
TLE4241GM
Hersteller: Infineon Technologies
Description: IC LED DRVR LINEAR PWM 60MA 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 60mA
Internal Switch(s): Yes
Supplier Device Package: PG-DSO-8-9
Dimming: PWM
Voltage - Supply (Min): 4V
Voltage - Supply (Max): 45V
Produkt ist nicht verfügbar
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TLE42744DV50ATMA1 Infineon-TLE42744D%20V50-DataSheet-v01_40-EN.pdf?fileId=8ac78c8c93dda25b019519be417f740f
TLE42744DV50ATMA1
Hersteller: Infineon Technologies
Description: IC REG LIN 5V 400MA PG-TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-3
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Qualification: AEC-Q100
auf Bestellung 8923 Stücke:
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10+2.26 EUR
13+1.63 EUR
25+1.48 EUR
100+1.31 EUR
250+1.23 EUR
500+1.18 EUR
1000+1.15 EUR
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TLE4295GV50HTSA1 Infineon-TLE4295-DS-v01_40-EN.pdf?fileId=5546d46258fc0bc101595f8575241f74
TLE4295GV50HTSA1
Hersteller: Infineon Technologies
Description: IC REG LIN 5V 30MA PG-SCT595-5
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 30mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5
Voltage - Output (Min/Fixed): 5V
Control Features: Power Fail
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.4V @ 20mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 4 mA
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE4906KHTSA1 Infineon-TLE4906L-DataSheet-v02_10-EN.pdf?fileId=db3a304316f66ee8011754425fe50642
TLE4906KHTSA1
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH UNIPOLAR SC59
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 13.5mT Trip, 5mT Release
Current - Output (Max): 20mA
Current - Supply (Max): 6mA
Supplier Device Package: PG-SC59-3
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 3396 Stücke:
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18+1.19 EUR
21+1.04 EUR
22+0.99 EUR
25+0.92 EUR
50+0.88 EUR
100+0.83 EUR
500+0.75 EUR
1000+0.73 EUR
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TLE4941PLUSC Infineon-TLE4941-DS-v01_01-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30433899edae0138c3cb0f870330
TLE4941PLUSC
Hersteller: Infineon Technologies
Description: IC HALL EFFECT SENSOR SSO2-53
auf Bestellung 1075 Stücke:
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TLE49462KHTSA1 TLE4946-2K_DS_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a30431f848401011fbc925c48637f
TLE49462KHTSA1
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH LATCH SC59
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Surface Mount
Function: Latch
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 3.5mT Trip, -3.5mT Release
Current - Output (Max): 20mA
Current - Supply (Max): 6mA
Supplier Device Package: PG-SC59-3
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 28929 Stücke:
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AnzahlPrivatkunde
18+1.19 EUR
21+1.04 EUR
22+0.99 EUR
25+0.92 EUR
50+0.88 EUR
100+0.83 EUR
500+0.75 EUR
1000+0.73 EUR
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TLE62512GXUMA1 Infineon-TLE6251-2G-DS-v01_20-EN.pdf?fileId=5546d4625996c0c30159a766fb9977b8
TLE62512GXUMA1
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER HALF 1/1 DSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Protocol: CANbus
Supplier Device Package: PG-DSO-14-24
Receiver Hysteresis: 100 mV
Duplex: Half
Part Status: Not For New Designs
Produkt ist nicht verfügbar
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TLE6368G2AUMA1 Infineon-TLE6368G2-DS-v02_32-EN.pdf?fileId=5546d46258fc0bc1015969d24ffd41c4
TLE6368G2AUMA1
Hersteller: Infineon Technologies
Description: IC REG AUTO APPL 3OUT DSO-36
Packaging: Cut Tape (CT)
Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
Voltage - Output: 2.6V, 3.3V, 5V
Mounting Type: Surface Mount
Number of Outputs: 3
Voltage - Input: 5.5V ~ 60V
Operating Temperature: -40°C ~ 150°C
Applications: Power Supply, Automotive Applications
Supplier Device Package: PG-DSO-36-26
Grade: Automotive
Part Status: Not For New Designs
Qualification: AEC-Q100
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TLE6389-2GV TLE6389-2-3_DS_21.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b43641bf65a6
TLE6389-2GV
Hersteller: Infineon Technologies
Description: IC REG CTRLR BUCK 14DSO
auf Bestellung 7735 Stücke:
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TLV4906K TLV4906x_DS_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a304320d39d590121544295e605cd
TLV4906K
Hersteller: Infineon Technologies
Description: IC HALL EFFECT SW SC59-3
auf Bestellung 3000 Stücke:
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BTS721L1XUMA1 Infineon-BTS721L1-DS-v01_03-EN.pdf?fileId=5546d4625a888733015aa3ac546f0ff9
BTS721L1XUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-20
Features: Auto Restart, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 85mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-20
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 2478 Stücke:
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AnzahlPrivatkunde
2+14.24 EUR
10+11.01 EUR
25+10.2 EUR
100+9.31 EUR
250+9.06 EUR
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BAS7002WH6327XTSA1 bas70_bas170series.pdf?folderId=db3a30431400ef68011425f1ca2505e3&fileId=db3a304314dca389011518ad41680e12
BAS7002WH6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 70V 70MA SCD80-2
Produkt ist nicht verfügbar
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BSC014N03MS G BSC014N03MSG_rev1.2.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a304319c6f18c011a38f5a96704e8
BSC014N03MS G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 100A TDSON-8
Produkt ist nicht verfügbar
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BSC016N03LS G BSC016N03LS_rev1.28.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42761a13c1b
BSC016N03LS G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 100A TDSON8
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IDD04S60C IDD04S60C_2.0.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b439f8d36f1a
IDD04S60C
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 600V 5.6A TO252-3
Produkt ist nicht verfügbar
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SAK-C167CR-L33M HA+ c167cr_ds_v3.3_2005_02.pdf?folderId=db3a304412b407950112b41daf4330b3&fileId=db3a304412b407950112b41daf9f30b4
SAK-C167CR-L33M HA+
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 2KB XRAM 144MQFP
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SPD07N20 G spd07n20_Rev+2.4.pdf?folderId=db3a30431a5c32f2011a809773886508&fileId=db3a30431f848401011fc73c3e60796a
SPD07N20 G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 7A TO252
auf Bestellung 11517 Stücke:
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TLE6389-2GV TLE6389-2-3_DS_21.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b43641bf65a6
TLE6389-2GV
Hersteller: Infineon Technologies
Description: IC REG CTRLR BUCK 14DSO
auf Bestellung 7735 Stücke:
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TLV4906K TLV4906x_DS_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a304320d39d590121544295e605cd
TLV4906K
Hersteller: Infineon Technologies
Description: IC HALL EFFECT SW SC59-3
Produkt ist nicht verfügbar
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SPD03N50C3 description Infineon-SPD03N50C3-DS-v02_06-en.pdf?fileId=db3a30433f12d084013f144a43c7038b
SPD03N50C3
Hersteller: Infineon Technologies
Description: MOSFET N-CH 560V 3.2A DPAK
Produkt ist nicht verfügbar
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IRFHM831TRPBF irfhm831pbf.pdf?fileId=5546d462533600a4015356233dba1f49
IRFHM831TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 14A/40A PQFN
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Part Status: Obsolete
Supplier Device Package: PQFN (3x3)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Power Dissipation (Max): 2.5W (Ta), 27W (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Produkt ist nicht verfügbar
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IRFHM8329TRPBF irfhm8329pbf.pdf?fileId=5546d462533600a4015356234f3d1f4d
IRFHM8329TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 16A/57A PQFN
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PQFN (3x3)
Vgs(th) (Max) @ Id: 2.2V @ 25µA
Power Dissipation (Max): 2.6W (Ta), 33W (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 57A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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AM29F002BT-55JF AM29F002B_NB.pdf
Hersteller: Infineon Technologies
Description: IC FLASH 2MBIT PARALLEL 32PLCC
Packaging: Tube
Package / Case: 32-LCC (J-Lead)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.75V ~ 5.25V
Technology: FLASH
Memory Format: FLASH
Supplier Device Package: 32-PLCC (11.43x13.97)
Part Status: Obsolete
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 256K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25FL032P0XBHI020 Infineon-S25FL032P_32-Mbit_3.0_V_Flash_Memory-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed4e2dd5369&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FL032P0XBHI020
Hersteller: Infineon Technologies
Description: IC FLASH 32MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25FL032P0XMFI011 Infineon-S25FL032P_32-Mbit_3.0_V_Flash_Memory-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed4e2dd5369&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FL032P0XMFI011
Hersteller: Infineon Technologies
Description: IC FLASH 32MBIT SPI/QUAD 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
DigiKey Programmable: Verified
Produkt ist nicht verfügbar
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S25FL032P0XNFI000 Infineon-S25FL032P_32-Mbit_3.0_V_Flash_Memory-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed4e2dd5369&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FL032P0XNFI000
Hersteller: Infineon Technologies
Description: IC FLASH 32MBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25FL032P0XNFI001 Infineon-S25FL032P_32-Mbit_3.0_V_Flash_Memory-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed4e2dd5369&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FL032P0XNFI001
Hersteller: Infineon Technologies
Description: IC FLASH 32MBIT SPI/QUAD 8WSON
Packaging: Tube
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25FL032P0XNFI011 Infineon-S25FL032P_32-Mbit_3.0_V_Flash_Memory-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed4e2dd5369&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FL032P0XNFI011
Hersteller: Infineon Technologies
Description: IC FLASH 32MBIT SPI/QUAD 8USON
Packaging: Tube
Package / Case: 8-UDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-USON (5x6)
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25FL128SAGBHI210 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL128SAGBHI210
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
auf Bestellung 650 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.38 EUR
10+7.43 EUR
25+7.08 EUR
40+6.91 EUR
80+6.66 EUR
338+6.19 EUR
Mindestbestellmenge: 3 Stücke
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S25FL128SAGMFI011 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL128SAGMFI011
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Verified
auf Bestellung 671 Stücke:
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AnzahlPrivatkunde
3+8.9 EUR
10+8.08 EUR
47+7.87 EUR
94+7.04 EUR
282+7.02 EUR
517+6.77 EUR
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S25FL129P0XBHI200 Infineon-S25FL129P_128-Mbit_3.0_V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5008a53b6&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FL129P0XBHI200
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Memory Organization: 16M x 8
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 5µs, 3ms
Part Status: Obsolete
Supplier Device Package: 24-BGA (8x6)
Memory Format: FLASH
Clock Frequency: 104 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 128Mbit
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Tray
auf Bestellung 1193 Stücke:
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AnzahlPrivatkunde
3+8.57 EUR
10+7.77 EUR
25+7.6 EUR
40+7.56 EUR
80+6.78 EUR
338+6.76 EUR
676+6.51 EUR
1014+6.19 EUR
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S25FL129P0XBHI300 Infineon-S25FL129P_128-Mbit_3.0_V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5008a53b6&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FL129P0XBHI300
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Memory Organization: 16M x 8
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 5µs, 3ms
Part Status: Obsolete
Supplier Device Package: 24-BGA (6x8)
Memory Format: FLASH
Clock Frequency: 104 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 128Mbit
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Tray
auf Bestellung 5067 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.57 EUR
10+7.77 EUR
25+7.6 EUR
40+7.56 EUR
80+6.78 EUR
338+6.76 EUR
676+6.51 EUR
1014+6.19 EUR
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S25FL129P0XBHI303 Infineon-S25FL129P_128-Mbit_3.0_V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5008a53b6&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FL129P0XBHI303
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 24BGA
DigiKey Programmable: Not Verified
Memory Organization: 16M x 8
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 5µs, 3ms
Supplier Device Package: 24-BGA (6x8)
Memory Format: FLASH
Clock Frequency: 104 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 128Mbit
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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S25FL204K0TMFI010 Infineon-S25FL204K_4-Mbit_3.0_V_SPI_Flash_Memory-AdditionalTechnicalInformation-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed4ea6f537a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FL204K0TMFI010
Hersteller: Infineon Technologies
Description: IC FLASH 4MBIT SPI 85MHZ 8SOIC
Memory Type: Non-Volatile
Memory Size: 4Mbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Packaging: Tray
Memory Organization: 512K x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 5ms
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Memory Format: FLASH
Clock Frequency: 85 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Produkt ist nicht verfügbar
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S25FL256SAGBHI210 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL256SAGBHI210
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
auf Bestellung 3311 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+10.56 EUR
10+9.65 EUR
25+9.46 EUR
40+9.39 EUR
80+8.43 EUR
338+8.4 EUR
676+7.87 EUR
1014+7.53 EUR
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S25FL256SAGBHIY00 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL256SAGBHIY00
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 3380 Stücke
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S25FL256SAGMFI011 001-98283%20Rev%20T.pdf
S25FL256SAGMFI011
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
auf Bestellung 154 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+10.86 EUR
10+10.14 EUR
47+9.63 EUR
94+9.4 EUR
141+9.26 EUR
Mindestbestellmenge: 2 Stücke
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