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AUIRFR8403 AUIRFR8403 Infineon Technologies IRSDS18588-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 40V 100A DPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 3171 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Power Dissipation (Max): 99W (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 76A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Produkt ist nicht verfügbar
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AUIRFB8409 AUIRFB8409 Infineon Technologies auirfs8409.pdf?fileId=5546d462533600a4015355b73c5f14ec Description: MOSFET N-CH 40V 195A TO220AB
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 14240 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 450 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
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CY8C5468AXI-LP106 CY8C5468AXI-LP106 Infineon Technologies download Description: IC MCU 32BIT 256KB FLASH 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 1x12b; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 100-TQFP (14x14)
Part Status: Active
Number of I/O: 62
DigiKey Programmable: Not Verified
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180+17.16 EUR
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CY8C5667LTI-LP009 CY8C5667LTI-LP009 Infineon Technologies download Description: IC MCU 32BIT 128KB FLASH 68QFN
Number of I/O: 38
Part Status: Active
Supplier Device Package: 68-QFN (8x8)
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 2x12b; D/A 4x8b
Core Processor: ARM® Cortex®-M3
EEPROM Size: 2K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 32K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 67MHz
Mounting Type: Surface Mount
Package / Case: 68-VFQFN Exposed Pad
Packaging: Tray
DigiKey Programmable: Not Verified
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CY8C5866LTI-LP022 CY8C5866LTI-LP022 Infineon Technologies Infineon-PSoC_5LP_CY8C58LP_Family_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec547013ab9 Description: IC MCU 32BIT 64KB FLASH 68QFN
RAM Size: 16K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 67MHz
Mounting Type: Surface Mount
Package / Case: 68-VFQFN Exposed Pad
Packaging: Tray
Number of I/O: 38
Part Status: Active
Supplier Device Package: 68-QFN (8x8)
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Connectivity: I²C, LINbus, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 1x20b, 1x12b; D/A 4x8b
Core Processor: ARM® Cortex®-M3
EEPROM Size: 2K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
DigiKey Programmable: Not Verified
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CY8C5666LTI-LP005 CY8C5666LTI-LP005 Infineon Technologies download Description: IC MCU 32BIT 64KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 2x12b; D/A 4x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Part Status: Active
Number of I/O: 38
DigiKey Programmable: Not Verified
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CY8C5866AXI-LP021 CY8C5866AXI-LP021 Infineon Technologies infineon-psoc-5lp-cy8c58lp-datasheet-datasheet-en.pdf Description: IC MCU 32BIT 64KB FLASH 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 1x20b, 1x12b; D/A 4x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 100-TQFP (14x14)
Number of I/O: 62
DigiKey Programmable: Not Verified
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CY8C5867LTI-LP028 CY8C5867LTI-LP028 Infineon Technologies infineon-psoc-5lp-cy8c58lp-datasheet-datasheet-en.pdf Description: IC MCU 32BIT 128KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 1x20b, 1x12b; D/A 4x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Part Status: Active
Number of I/O: 38
DigiKey Programmable: Not Verified
auf Bestellung 260 Stücke:
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10+43.17 EUR
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100+37.63 EUR
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CY8C5667LTI-LP041 CY8C5667LTI-LP041 Infineon Technologies download Description: IC MCU 32BIT 128KB FLASH 68QFN
Connectivity: I2C, LINbus, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 2x12b; D/A 4x8b
Core Processor: ARM® Cortex®-M3
EEPROM Size: 2K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 32K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 67MHz
Mounting Type: Surface Mount
Package / Case: 68-VFQFN Exposed Pad
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 38
Part Status: Active
Supplier Device Package: 68-QFN (8x8)
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
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CY8C5666AXI-LP004 CY8C5666AXI-LP004 Infineon Technologies download Description: IC MCU 32BIT 64KB FLASH 100TQFP
DigiKey Programmable: Not Verified
Number of I/O: 62
Part Status: Active
Supplier Device Package: 100-TQFP (14x14)
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Connectivity: I2C, LINbus, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 2x12b; D/A 4x8b
Core Processor: ARM® Cortex®-M3
EEPROM Size: 2K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 16K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 67MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
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CY8C5667AXI-LP040 CY8C5667AXI-LP040 Infineon Technologies download Description: IC MCU 32BIT 128KB FLASH 100TQFP
DigiKey Programmable: Not Verified
Part Status: Active
Supplier Device Package: 100-TQFP (14x14)
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Connectivity: I2C, LINbus, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 2x12b; D/A 4x8b
Core Processor: ARM® Cortex®-M3
EEPROM Size: 2K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 32K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 67MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
Number of I/O: 62
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1+36.1 EUR
10+28.76 EUR
90+25.04 EUR
180+24.26 EUR
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IR4321MTRPBF IR4321MTRPBF Infineon Technologies ir4301.pdf?fileId=5546d462533600a4015355d5fc691819 Description: IC AMP CLASS D MONO 90W 22QFN
Supplier Device Package: 22-QFN (3x4)
Max Output Power x Channels @ Load: 90W x 1 @ 4Ohm
Operating Temperature: -40°C ~ 100°C (TA)
Type: Class D
Mounting Type: Surface Mount
Output Type: 1-Channel (Mono)
Package / Case: 22-PowerVQFN
Features: Depop, Differential Inputs
Packaging: Tape & Reel (TR)
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IR4322MTRPBF IR4322MTRPBF Infineon Technologies ir4302.pdf?fileId=5546d462533600a4015355d602a9181d Description: IC AMP CLASS D STEREO 100W 44QFN
Part Status: Active
Supplier Device Package: 44-PQFN (7x7)
Max Output Power x Channels @ Load: 100W x 2 @ 4Ohm
Voltage - Supply: 46V
Operating Temperature: -40°C ~ 100°C (TA)
Type: Class D
Mounting Type: Surface Mount
Output Type: 2-Channel (Stereo)
Package / Case: 44-PowerVFQFN
Features: Depop
Packaging: Cut Tape (CT)
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1000+6.59 EUR
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IR4321MTRPBF IR4321MTRPBF Infineon Technologies ir4301.pdf?fileId=5546d462533600a4015355d5fc691819 Description: IC AMP CLASS D MONO 90W 22QFN
Supplier Device Package: 22-QFN (3x4)
Max Output Power x Channels @ Load: 90W x 1 @ 4Ohm
Operating Temperature: -40°C ~ 100°C (TA)
Type: Class D
Mounting Type: Surface Mount
Output Type: 1-Channel (Mono)
Package / Case: 22-PowerVQFN
Features: Depop, Differential Inputs
Packaging: Cut Tape (CT)
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500+4.57 EUR
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IRS44273LTRPBF IRS44273LTRPBF Infineon Technologies infineon-irs44273l-datasheet-en.pdf Description: IC GATE DRVR LOW-SIDE SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10.2V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: SOT-23-5
Rise / Fall Time (Typ): 25ns, 25ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.5A, 1.5A
Part Status: Active
DigiKey Programmable: Not Verified
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100+0.77 EUR
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500+0.69 EUR
1000+0.67 EUR
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IRFS4410ZTRLPBF IRFS4410ZTRLPBF Infineon Technologies irfb4410zpbf.pdf?fileId=5546d462533600a40153561644141e3a Description: MOSFET N-CH 100V 97A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 58A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4820 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
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PVN012S-TPBF PVN012S-TPBF Infineon Technologies pvn012.pdf?fileId=5546d462533600a401535683f185294d Description: SSR RELAY SPST-NO 2.5A 0-20V
Approval Agency: UL
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 100 mOhms
Voltage - Load: 0 V ~ 20 V
Supplier Device Package: 6-SMT
Load Current: 2.5 A
Termination Style: Gull Wing
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.2VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 6-SMD (0.300", 7.62mm)
Packaging: Cut Tape (CT)
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IRFH4201TRPBF IRFH4201TRPBF Infineon Technologies irfh4201pbf.pdf?fileId=5546d462533600a40153561a3f1c1e7c Description: MOSFET N-CH 25V 49A 8PQFN
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IRFH4210TRPBF IRFH4210TRPBF Infineon Technologies irfh4210pbf.pdf?fileId=5546d462533600a40153561a571f1e82 Description: MOSFET N-CH 25V 45A PQFN
Input Capacitance (Ciss) (Max) @ Vds: 4812 pF @ 13 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PQFN (5x6)
Vgs(th) (Max) @ Id: 2.1V @ 100µA
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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IRFH4213DTRPBF IRFH4213DTRPBF Infineon Technologies irfh4213dpbf.pdf?fileId=5546d462533600a40153561a5db31e84 Description: MOSFET N-CH 25V 40A PQFN
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3520 pF @ 13 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PQFN (5x6)
Vgs(th) (Max) @ Id: 2.1V @ 100µA
Power Dissipation (Max): 3.6W (Ta), 96W (Tc)
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IRFH4213TRPBF IRFH4213TRPBF Infineon Technologies irfh4213pbf.pdf?fileId=5546d462533600a40153561a66431e86 Description: MOSFET N-CH 25V 41A 8PQFN
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IRFHM4226TRPBF IRFHM4226TRPBF Infineon Technologies irfhm4226pbf.pdf?fileId=5546d462533600a40153561ffabf1f2d Description: MOSFET N CH 25V 28A PQFN
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 13 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.1V @ 50µA
Power Dissipation (Max): 2.7W (Ta), 39W (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TQFN Exposed Pad
Packaging: Tape & Reel (TR)
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IRFH4251DTRPBF IRFH4251DTRPBF Infineon Technologies irfh4251dpbf.pdf?fileId=5546d462533600a40153561a7de51e8c Description: MOSFET 2N-CH 25V 64A/188A PQFN
Part Status: Last Time Buy
Supplier Device Package: PG-TISON-8
Vgs(th) (Max) @ Id: 2.1V @ 35µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 13V
Current - Continuous Drain (Id) @ 25°C: 64A, 188A
Drain to Source Voltage (Vdss): 25V
Power - Max: 31W, 63W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual), Schottky
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
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IRFH4201TRPBF IRFH4201TRPBF Infineon Technologies irfh4201pbf.pdf?fileId=5546d462533600a40153561a3f1c1e7c Description: MOSFET N-CH 25V 49A 8PQFN
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IRFH4210TRPBF IRFH4210TRPBF Infineon Technologies irfh4210pbf.pdf?fileId=5546d462533600a40153561a571f1e82 Description: MOSFET N-CH 25V 45A PQFN
Input Capacitance (Ciss) (Max) @ Vds: 4812 pF @ 13 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PQFN (5x6)
Vgs(th) (Max) @ Id: 2.1V @ 100µA
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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IRFH4213TRPBF IRFH4213TRPBF Infineon Technologies irfh4213pbf.pdf?fileId=5546d462533600a40153561a66431e86 Description: MOSFET N-CH 25V 41A 8PQFN
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IRFH4251DTRPBF IRFH4251DTRPBF Infineon Technologies irfh4251dpbf.pdf?fileId=5546d462533600a40153561a7de51e8c Description: MOSFET 2N-CH 25V 64A/188A PQFN
Part Status: Last Time Buy
Supplier Device Package: PG-TISON-8
Vgs(th) (Max) @ Id: 2.1V @ 35µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 13V
Current - Continuous Drain (Id) @ 25°C: 64A, 188A
Drain to Source Voltage (Vdss): 25V
Power - Max: 31W, 63W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual), Schottky
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
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IRFH4253DTRPBF IRFH4253DTRPBF Infineon Technologies irfh4253dpbf.pdf?fileId=5546d462533600a40153561a847c1e8e Description: MOSFET 2N-CH 25V 64A/145A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 31W, 50W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 64A, 145A
Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 13V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 35µA
Supplier Device Package: PQFN (5x6)
Part Status: Not For New Designs
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IRFH4253DTRPBF IRFH4253DTRPBF Infineon Technologies irfh4253dpbf.pdf?fileId=5546d462533600a40153561a847c1e8e Description: MOSFET 2N-CH 25V 64A/145A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 31W, 50W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 64A, 145A
Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 13V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 35µA
Supplier Device Package: PQFN (5x6)
Part Status: Not For New Designs
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100+2.86 EUR
500+2.32 EUR
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IPD50R1K4CEBTMA1 IPD50R1K4CEBTMA1 Infineon Technologies IPx50R1K4CE.pdf Description: MOSFET N-CH 500V 3.1A TO252-3
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IPD50R3K0CEBTMA1 IPD50R3K0CEBTMA1 Infineon Technologies IPx50R3K0CE.pdf Description: MOSFET N-CH 500V 1.7A PG-TO-252
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IPD50R1K4CEBTMA1 IPD50R1K4CEBTMA1 Infineon Technologies IPx50R1K4CE.pdf Description: MOSFET N-CH 500V 3.1A TO252-3
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IPD50R3K0CEBTMA1 IPD50R3K0CEBTMA1 Infineon Technologies IPx50R3K0CE.pdf Description: MOSFET N-CH 500V 1.7A PG-TO-252
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IPP50R190CEXKSA1 IPP50R190CEXKSA1 Infineon Technologies IPx50R190CE+2.0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a304339d29c450139d43facbe02fb Description: MOSFET N-CH 500V 18.5A TO220-3
Power Dissipation (Max): 127W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.2A, 13V
Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1137 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 47.2 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 13V
Part Status: Active
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 3.5V @ 510µA
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XMC4504F144F512ABXQMA1 XMC4504F144F512ABXQMA1 Infineon Technologies Infineon-XMC4500-DS-v01_05-EN.pdf?fileId=5546d46254e133b40154e1b56cbe0123 Description: IC MCU 32BIT 512KB FLASH 144LQFP
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 128K x 8
Program Memory Size: 512KB (512K x 8)
Speed: 120MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP Exposed Pad
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 91
Supplier Device Package: PG-LQFP-144-18
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Core Size: 32-Bit Single-Core
Data Converters: A/D 32x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4
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IR3847MTRPBF IR3847MTRPBF Infineon Technologies ir3847m.pdf?fileId=5546d462533600a4015355d5711917f1 Description: IC REG BUCK ADJUSTABLE 25A PQFN
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IR3891MTRPBF IR3891MTRPBF Infineon Technologies ir3891m.pdf?fileId=5546d462533600a4015355d5c3a9180b Description: IC REG BUCK ADJ 4A DL PQFN
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IPA60R190P6XKSA1 IPA60R190P6XKSA1 Infineon Technologies DS_IPA60R190P6_2_0_Approved.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a30433f2e70c5013f37c80e24240f Description: MOSFET N-CH 600V 20.2A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.6A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µ
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 100 V
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1000+2 EUR
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IPA60R600P6XKSA1 IPA60R600P6XKSA1 Infineon Technologies DS_IPA60R600P6_2_0_Approved.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a30433f2e70c5013f3862b5622681 Description: MOSFET N-CH 600V 4.9A TO220-FP
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 557 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Power Dissipation (Max): 28W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
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IPD60R600P6 IPD60R600P6 Infineon Technologies DS_IPx60R600P6_2_1.pdf?fileId=db3a30433f2e70c5013f3862b5622681 Description: MOSFET N-CH 600V 7.3A TO252-3
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 557 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3
Power Dissipation (Max): 63W (Tc)
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IPP60R600P6XKSA1 IPP60R600P6XKSA1 Infineon Technologies DS_IPx60R600P6_2_1.pdf?fileId=db3a30433f2e70c5013f3862b5622681 Description: MOSFET N-CH 600V 7.3A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 557 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IPU50R950CEBKMA1 IPU50R950CEBKMA1 Infineon Technologies IPx50R950CE+2.0.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a3043382e837301385194b31e1064 Description: MOSFET N-CH 500V 4.3A TO251-3
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 13V
Supplier Device Package: PG-TO251-3
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Power Dissipation (Max): 34W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V
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IPW60R190P6FKSA1 IPW60R190P6FKSA1 Infineon Technologies Infineon-IPX60R190P6-DS-v02_01-en.pdf?fileId=db3a30433f2e70c5013f37c80e24240f Description: MOSFET N-CH 600V 20.2A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4.5V @ 630µ
Power Dissipation (Max): 151W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 391 Stücke:
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BGA 715N7 E6330 BGA 715N7 E6330 Infineon Technologies BGA715N7.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433db6f09f013dcae19fc754fb Description: IC AMP GPS 3.3V 3.3MA TSLP7-1
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BGA 715N7 E6330 BGA 715N7 E6330 Infineon Technologies BGA715N7.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433db6f09f013dcae19fc754fb Description: IC AMP GPS 3.3V 3.3MA TSLP7-1
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BGA 231N7 E6330 BGA 231N7 E6330 Infineon Technologies BGA231N7_v1.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30432f69f146012f78199f332d8d Description: IC AMP LNA SIGE GPS TSLP-7
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BGA 231N7 E6330 BGA 231N7 E6330 Infineon Technologies BGA231N7_v1.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30432f69f146012f78199f332d8d Description: IC AMP LNA SIGE GPS TSLP-7
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BGA 825L6S E6327 BGA 825L6S E6327 Infineon Technologies BGA825L6S.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433cd75ebf013cf2684b7427e6 Description: IC AMP LNA SIGE GPS 6TSLP
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BGA 825L6S E6327 BGA 825L6S E6327 Infineon Technologies BGA825L6S.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433cd75ebf013cf2684b7427e6 Description: IC AMP LNA SIGE GPS 6TSLP
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BGA 715N7 E6330 BGA 715N7 E6330 Infineon Technologies BGA715N7.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433db6f09f013dcae19fc754fb Description: IC AMP GPS 3.3V 3.3MA TSLP7-1
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BGA231N7E6330XTSA1 BGA231N7E6330XTSA1 Infineon Technologies BGA231N7_v1.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30432f69f146012f78199f332d8d Description: IC AMP LNA SIGE GPS TSLP-7
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BGA 825L6S E6327 BGA 825L6S E6327 Infineon Technologies BGA825L6S.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433cd75ebf013cf2684b7427e6 Description: IC AMP LNA SIGE GPS 6TSLP
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CY7C65211-24LTXI CY7C65211-24LTXI Infineon Technologies Infineon-CY7C65211_USB-Serial_Single-Channel_(UART_I2C_SPI)_Bridge_with_CapSense_and_BCD-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eca9336437a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_ Description: IC USB TO SERIAL BRIDGE 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Function: Bridge, USB to I2C
Interface: UART
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Current - Supply: 20mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 24-QFN (4x4)
Part Status: Active
DigiKey Programmable: Not Verified
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CY7C65215-32LTXI CY7C65215-32LTXI Infineon Technologies download Description: IC USB TO SERIAL BRIDGE 32QFN
Packaging: Tray
Package / Case: 32-VFQFN Exposed Pad
Function: Bridge, USB to I2C
Interface: UART
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Current - Supply: 20mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 32-QFN (5x5)
Part Status: Active
DigiKey Programmable: Not Verified
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25+4.63 EUR
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490+3.83 EUR
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1470+3.67 EUR
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IRS21867STRPBF IRS21867STRPBF Infineon Technologies infineon-irs21867s-datasheet-en.pdf Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: CMOS, TTL
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 22ns, 18ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
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25+2.71 EUR
100+2.43 EUR
250+2.28 EUR
500+2.21 EUR
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PVT312LS-TPBF PVT312LS-TPBF Infineon Technologies pvt312.pdf?fileId=5546d462533600a4015356841f1c2960 Description: SSR RELAY SPST-NO 170MA 0-250V
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 170 mA
Approval Agency: UL
Supplier Device Package: 6-SMT
Part Status: Active
Voltage - Load: 0 V ~ 250 V
On-State Resistance (Max): 15 Ohms
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100+7.18 EUR
250+6.85 EUR
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IRFR3410TRPBF IRFR3410TRPBF Infineon Technologies irfr3410pbf.pdf?fileId=5546d462533600a401535630fe762090 description Description: MOSFET N-CH 100V 31A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 18A, 10V
Power Dissipation (Max): 3W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 25 V
auf Bestellung 2062 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.93 EUR
12+1.86 EUR
100+1.23 EUR
500+0.96 EUR
1000+0.88 EUR
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BSC010N04LSATMA1 BSC010N04LSATMA1 Infineon Technologies BSC010N04LS_rev1+1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a3043353fdc16013552c1c63647c4 Description: MOSFET N-CH 40V 38A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 20 V
auf Bestellung 21988 Stücke:
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5+4.3 EUR
10+2.75 EUR
100+1.87 EUR
500+1.49 EUR
1000+1.37 EUR
2000+1.33 EUR
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BSC010N04LSATMA1 BSC010N04LSATMA1 Infineon Technologies BSC010N04LS_rev1+1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a3043353fdc16013552c1c63647c4 Description: MOSFET N-CH 40V 38A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 20 V
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10000+1.09 EUR
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BSC014N04LSIATMA1 BSC014N04LSIATMA1 Infineon Technologies BSC014N04LSI_rev2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a3043353fdc16013552fc8f274806 Description: MOSFET N-CH 40V 31A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.45mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 20 V
auf Bestellung 41852 Stücke:
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AUIRFR8403 IRSDS18588-1.pdf?t.download=true&u=5oefqw
AUIRFR8403
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 100A DPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 3171 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Power Dissipation (Max): 99W (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 76A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Produkt ist nicht verfügbar
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AUIRFB8409 auirfs8409.pdf?fileId=5546d462533600a4015355b73c5f14ec
AUIRFB8409
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 195A TO220AB
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 14240 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 450 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
auf Bestellung 1986 Stücke:
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2+18.05 EUR
50+10.79 EUR
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CY8C5468AXI-LP106 download
CY8C5468AXI-LP106
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 1x12b; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 100-TQFP (14x14)
Part Status: Active
Number of I/O: 62
DigiKey Programmable: Not Verified
auf Bestellung 1418 Stücke:
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180+17.16 EUR
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CY8C5667LTI-LP009 download
CY8C5667LTI-LP009
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 68QFN
Number of I/O: 38
Part Status: Active
Supplier Device Package: 68-QFN (8x8)
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 2x12b; D/A 4x8b
Core Processor: ARM® Cortex®-M3
EEPROM Size: 2K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 32K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 67MHz
Mounting Type: Surface Mount
Package / Case: 68-VFQFN Exposed Pad
Packaging: Tray
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8C5866LTI-LP022 Infineon-PSoC_5LP_CY8C58LP_Family_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec547013ab9
CY8C5866LTI-LP022
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 68QFN
RAM Size: 16K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 67MHz
Mounting Type: Surface Mount
Package / Case: 68-VFQFN Exposed Pad
Packaging: Tray
Number of I/O: 38
Part Status: Active
Supplier Device Package: 68-QFN (8x8)
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Connectivity: I²C, LINbus, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 1x20b, 1x12b; D/A 4x8b
Core Processor: ARM® Cortex®-M3
EEPROM Size: 2K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8C5666LTI-LP005 download
CY8C5666LTI-LP005
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 2x12b; D/A 4x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Part Status: Active
Number of I/O: 38
DigiKey Programmable: Not Verified
auf Bestellung 2600 Stücke:
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AnzahlPrivatkunde
1+27.29 EUR
10+21.67 EUR
25+20.27 EUR
80+19.83 EUR
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CY8C5866AXI-LP021 infineon-psoc-5lp-cy8c58lp-datasheet-datasheet-en.pdf
CY8C5866AXI-LP021
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 1x20b, 1x12b; D/A 4x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 100-TQFP (14x14)
Number of I/O: 62
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 900 Stücke
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CY8C5867LTI-LP028 infineon-psoc-5lp-cy8c58lp-datasheet-datasheet-en.pdf
CY8C5867LTI-LP028
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 1x20b, 1x12b; D/A 4x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Part Status: Active
Number of I/O: 38
DigiKey Programmable: Not Verified
auf Bestellung 260 Stücke:
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AnzahlPrivatkunde
1+53.74 EUR
10+43.17 EUR
25+40.53 EUR
100+37.63 EUR
260+36.2 EUR
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CY8C5667LTI-LP041 download
CY8C5667LTI-LP041
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 68QFN
Connectivity: I2C, LINbus, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 2x12b; D/A 4x8b
Core Processor: ARM® Cortex®-M3
EEPROM Size: 2K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 32K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 67MHz
Mounting Type: Surface Mount
Package / Case: 68-VFQFN Exposed Pad
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 38
Part Status: Active
Supplier Device Package: 68-QFN (8x8)
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
auf Bestellung 3137 Stücke:
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1+35.44 EUR
10+28.21 EUR
25+26.41 EUR
100+24.43 EUR
260+23.44 EUR
520+22.88 EUR
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CY8C5666AXI-LP004 download
CY8C5666AXI-LP004
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 100TQFP
DigiKey Programmable: Not Verified
Number of I/O: 62
Part Status: Active
Supplier Device Package: 100-TQFP (14x14)
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Connectivity: I2C, LINbus, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 2x12b; D/A 4x8b
Core Processor: ARM® Cortex®-M3
EEPROM Size: 2K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 16K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 67MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
auf Bestellung 601 Stücke:
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AnzahlPrivatkunde
1+27.83 EUR
10+22.11 EUR
25+20.68 EUR
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CY8C5667AXI-LP040 download
CY8C5667AXI-LP040
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 100TQFP
DigiKey Programmable: Not Verified
Part Status: Active
Supplier Device Package: 100-TQFP (14x14)
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Connectivity: I2C, LINbus, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 2x12b; D/A 4x8b
Core Processor: ARM® Cortex®-M3
EEPROM Size: 2K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 32K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 67MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
Number of I/O: 62
auf Bestellung 851 Stücke:
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AnzahlPrivatkunde
1+36.1 EUR
10+28.76 EUR
90+25.04 EUR
180+24.26 EUR
270+23.88 EUR
540+23.31 EUR
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IR4321MTRPBF ir4301.pdf?fileId=5546d462533600a4015355d5fc691819
IR4321MTRPBF
Hersteller: Infineon Technologies
Description: IC AMP CLASS D MONO 90W 22QFN
Supplier Device Package: 22-QFN (3x4)
Max Output Power x Channels @ Load: 90W x 1 @ 4Ohm
Operating Temperature: -40°C ~ 100°C (TA)
Type: Class D
Mounting Type: Surface Mount
Output Type: 1-Channel (Mono)
Package / Case: 22-PowerVQFN
Features: Depop, Differential Inputs
Packaging: Tape & Reel (TR)
auf Bestellung 4000 Stücke:
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AnzahlPrivatkunde
4000+3.65 EUR
Mindestbestellmenge: 4000 Stücke
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IR4322MTRPBF ir4302.pdf?fileId=5546d462533600a4015355d602a9181d
IR4322MTRPBF
Hersteller: Infineon Technologies
Description: IC AMP CLASS D STEREO 100W 44QFN
Part Status: Active
Supplier Device Package: 44-PQFN (7x7)
Max Output Power x Channels @ Load: 100W x 2 @ 4Ohm
Voltage - Supply: 46V
Operating Temperature: -40°C ~ 100°C (TA)
Type: Class D
Mounting Type: Surface Mount
Output Type: 2-Channel (Stereo)
Package / Case: 44-PowerVFQFN
Features: Depop
Packaging: Cut Tape (CT)
auf Bestellung 2890 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+11.41 EUR
10+8.73 EUR
25+8.07 EUR
100+7.33 EUR
250+6.97 EUR
500+6.77 EUR
1000+6.59 EUR
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IR4321MTRPBF ir4301.pdf?fileId=5546d462533600a4015355d5fc691819
IR4321MTRPBF
Hersteller: Infineon Technologies
Description: IC AMP CLASS D MONO 90W 22QFN
Supplier Device Package: 22-QFN (3x4)
Max Output Power x Channels @ Load: 90W x 1 @ 4Ohm
Operating Temperature: -40°C ~ 100°C (TA)
Type: Class D
Mounting Type: Surface Mount
Output Type: 1-Channel (Mono)
Package / Case: 22-PowerVQFN
Features: Depop, Differential Inputs
Packaging: Cut Tape (CT)
auf Bestellung 7995 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.28 EUR
10+6.54 EUR
25+6.19 EUR
100+5.37 EUR
250+5.08 EUR
500+4.57 EUR
1000+3.84 EUR
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IRS44273LTRPBF infineon-irs44273l-datasheet-en.pdf
IRS44273LTRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10.2V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: SOT-23-5
Rise / Fall Time (Typ): 25ns, 25ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.5A, 1.5A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 11083 Stücke:
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AnzahlPrivatkunde
16+1.38 EUR
22+0.98 EUR
25+0.88 EUR
100+0.77 EUR
250+0.71 EUR
500+0.69 EUR
1000+0.67 EUR
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IRFS4410ZTRLPBF irfb4410zpbf.pdf?fileId=5546d462533600a40153561644141e3a
IRFS4410ZTRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 97A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 58A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4820 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
auf Bestellung 2166 Stücke:
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AnzahlPrivatkunde
4+6.59 EUR
10+4.3 EUR
100+2.99 EUR
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PVN012S-TPBF pvn012.pdf?fileId=5546d462533600a401535683f185294d
PVN012S-TPBF
Hersteller: Infineon Technologies
Description: SSR RELAY SPST-NO 2.5A 0-20V
Approval Agency: UL
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 100 mOhms
Voltage - Load: 0 V ~ 20 V
Supplier Device Package: 6-SMT
Load Current: 2.5 A
Termination Style: Gull Wing
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.2VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 6-SMD (0.300", 7.62mm)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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IRFH4201TRPBF irfh4201pbf.pdf?fileId=5546d462533600a40153561a3f1c1e7c
IRFH4201TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 49A 8PQFN
Produkt ist nicht verfügbar
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IRFH4210TRPBF irfh4210pbf.pdf?fileId=5546d462533600a40153561a571f1e82
IRFH4210TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 45A PQFN
Input Capacitance (Ciss) (Max) @ Vds: 4812 pF @ 13 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PQFN (5x6)
Vgs(th) (Max) @ Id: 2.1V @ 100µA
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IRFH4213DTRPBF irfh4213dpbf.pdf?fileId=5546d462533600a40153561a5db31e84
IRFH4213DTRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 40A PQFN
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3520 pF @ 13 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PQFN (5x6)
Vgs(th) (Max) @ Id: 2.1V @ 100µA
Power Dissipation (Max): 3.6W (Ta), 96W (Tc)
Produkt ist nicht verfügbar
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IRFH4213TRPBF irfh4213pbf.pdf?fileId=5546d462533600a40153561a66431e86
IRFH4213TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 41A 8PQFN
Produkt ist nicht verfügbar
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IRFHM4226TRPBF irfhm4226pbf.pdf?fileId=5546d462533600a40153561ffabf1f2d
IRFHM4226TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N CH 25V 28A PQFN
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 13 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.1V @ 50µA
Power Dissipation (Max): 2.7W (Ta), 39W (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IRFH4251DTRPBF irfh4251dpbf.pdf?fileId=5546d462533600a40153561a7de51e8c
IRFH4251DTRPBF
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 25V 64A/188A PQFN
Part Status: Last Time Buy
Supplier Device Package: PG-TISON-8
Vgs(th) (Max) @ Id: 2.1V @ 35µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 13V
Current - Continuous Drain (Id) @ 25°C: 64A, 188A
Drain to Source Voltage (Vdss): 25V
Power - Max: 31W, 63W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual), Schottky
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IRFH4201TRPBF irfh4201pbf.pdf?fileId=5546d462533600a40153561a3f1c1e7c
IRFH4201TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 49A 8PQFN
Produkt ist nicht verfügbar
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IRFH4210TRPBF irfh4210pbf.pdf?fileId=5546d462533600a40153561a571f1e82
IRFH4210TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 45A PQFN
Input Capacitance (Ciss) (Max) @ Vds: 4812 pF @ 13 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PQFN (5x6)
Vgs(th) (Max) @ Id: 2.1V @ 100µA
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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IRFH4213TRPBF irfh4213pbf.pdf?fileId=5546d462533600a40153561a66431e86
IRFH4213TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 41A 8PQFN
Produkt ist nicht verfügbar
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IRFH4251DTRPBF irfh4251dpbf.pdf?fileId=5546d462533600a40153561a7de51e8c
IRFH4251DTRPBF
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 25V 64A/188A PQFN
Part Status: Last Time Buy
Supplier Device Package: PG-TISON-8
Vgs(th) (Max) @ Id: 2.1V @ 35µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 13V
Current - Continuous Drain (Id) @ 25°C: 64A, 188A
Drain to Source Voltage (Vdss): 25V
Power - Max: 31W, 63W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual), Schottky
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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IRFH4253DTRPBF irfh4253dpbf.pdf?fileId=5546d462533600a40153561a847c1e8e
IRFH4253DTRPBF
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 25V 64A/145A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 31W, 50W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 64A, 145A
Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 13V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 35µA
Supplier Device Package: PQFN (5x6)
Part Status: Not For New Designs
Produkt ist nicht verfügbar
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IRFH4253DTRPBF irfh4253dpbf.pdf?fileId=5546d462533600a40153561a847c1e8e
IRFH4253DTRPBF
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 25V 64A/145A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 31W, 50W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 64A, 145A
Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 13V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 35µA
Supplier Device Package: PQFN (5x6)
Part Status: Not For New Designs
auf Bestellung 3990 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.33 EUR
10+4.12 EUR
100+2.86 EUR
500+2.32 EUR
1000+2.2 EUR
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IPD50R1K4CEBTMA1 IPx50R1K4CE.pdf
IPD50R1K4CEBTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 3.1A TO252-3
Produkt ist nicht verfügbar
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IPD50R3K0CEBTMA1 IPx50R3K0CE.pdf
IPD50R3K0CEBTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 1.7A PG-TO-252
Produkt ist nicht verfügbar
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IPD50R1K4CEBTMA1 IPx50R1K4CE.pdf
IPD50R1K4CEBTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 3.1A TO252-3
Produkt ist nicht verfügbar
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IPD50R3K0CEBTMA1 IPx50R3K0CE.pdf
IPD50R3K0CEBTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 1.7A PG-TO-252
Produkt ist nicht verfügbar
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IPP50R190CEXKSA1 IPx50R190CE+2.0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a304339d29c450139d43facbe02fb
IPP50R190CEXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 18.5A TO220-3
Power Dissipation (Max): 127W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.2A, 13V
Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1137 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 47.2 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 13V
Part Status: Active
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 3.5V @ 510µA
auf Bestellung 532 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.32 EUR
50+2.62 EUR
100+2.36 EUR
500+1.89 EUR
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XMC4504F144F512ABXQMA1 Infineon-XMC4500-DS-v01_05-EN.pdf?fileId=5546d46254e133b40154e1b56cbe0123
XMC4504F144F512ABXQMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 144LQFP
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 128K x 8
Program Memory Size: 512KB (512K x 8)
Speed: 120MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP Exposed Pad
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 91
Supplier Device Package: PG-LQFP-144-18
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Core Size: 32-Bit Single-Core
Data Converters: A/D 32x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4
Produkt ist nicht verfügbar
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IR3847MTRPBF ir3847m.pdf?fileId=5546d462533600a4015355d5711917f1
IR3847MTRPBF
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJUSTABLE 25A PQFN
Produkt ist nicht verfügbar
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IR3891MTRPBF ir3891m.pdf?fileId=5546d462533600a4015355d5c3a9180b
IR3891MTRPBF
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJ 4A DL PQFN
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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IPA60R190P6XKSA1 DS_IPA60R190P6_2_0_Approved.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a30433f2e70c5013f37c80e24240f
IPA60R190P6XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 20.2A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.6A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µ
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 100 V
auf Bestellung 1165 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.97 EUR
50+2.96 EUR
100+2.68 EUR
500+2.17 EUR
1000+2 EUR
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IPA60R600P6XKSA1 DS_IPA60R600P6_2_0_Approved.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a30433f2e70c5013f3862b5622681
IPA60R600P6XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 4.9A TO220-FP
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 557 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Power Dissipation (Max): 28W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Produkt ist nicht verfügbar
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IPD60R600P6 DS_IPx60R600P6_2_1.pdf?fileId=db3a30433f2e70c5013f3862b5622681
IPD60R600P6
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 7.3A TO252-3
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 557 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3
Power Dissipation (Max): 63W (Tc)
Produkt ist nicht verfügbar
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IPP60R600P6XKSA1 DS_IPx60R600P6_2_1.pdf?fileId=db3a30433f2e70c5013f3862b5622681
IPP60R600P6XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 7.3A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 557 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IPU50R950CEBKMA1 IPx50R950CE+2.0.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a3043382e837301385194b31e1064
IPU50R950CEBKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 4.3A TO251-3
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 13V
Supplier Device Package: PG-TO251-3
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Power Dissipation (Max): 34W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V
Produkt ist nicht verfügbar
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IPW60R190P6FKSA1 Infineon-IPX60R190P6-DS-v02_01-en.pdf?fileId=db3a30433f2e70c5013f37c80e24240f
IPW60R190P6FKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 20.2A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4.5V @ 630µ
Power Dissipation (Max): 151W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 391 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.9 EUR
30+4.34 EUR
120+3.56 EUR
Mindestbestellmenge: 3 Stücke
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BGA 715N7 E6330 BGA715N7.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433db6f09f013dcae19fc754fb
BGA 715N7 E6330
Hersteller: Infineon Technologies
Description: IC AMP GPS 3.3V 3.3MA TSLP7-1
Produkt ist nicht verfügbar
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BGA 715N7 E6330 BGA715N7.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433db6f09f013dcae19fc754fb
BGA 715N7 E6330
Hersteller: Infineon Technologies
Description: IC AMP GPS 3.3V 3.3MA TSLP7-1
Produkt ist nicht verfügbar
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BGA 231N7 E6330 BGA231N7_v1.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30432f69f146012f78199f332d8d
BGA 231N7 E6330
Hersteller: Infineon Technologies
Description: IC AMP LNA SIGE GPS TSLP-7
Produkt ist nicht verfügbar
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BGA 231N7 E6330 BGA231N7_v1.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30432f69f146012f78199f332d8d
BGA 231N7 E6330
Hersteller: Infineon Technologies
Description: IC AMP LNA SIGE GPS TSLP-7
Produkt ist nicht verfügbar
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BGA 825L6S E6327 BGA825L6S.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433cd75ebf013cf2684b7427e6
BGA 825L6S E6327
Hersteller: Infineon Technologies
Description: IC AMP LNA SIGE GPS 6TSLP
auf Bestellung 12236 Stücke:
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BGA 825L6S E6327 BGA825L6S.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433cd75ebf013cf2684b7427e6
BGA 825L6S E6327
Hersteller: Infineon Technologies
Description: IC AMP LNA SIGE GPS 6TSLP
auf Bestellung 12236 Stücke:
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BGA 715N7 E6330 BGA715N7.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433db6f09f013dcae19fc754fb
BGA 715N7 E6330
Hersteller: Infineon Technologies
Description: IC AMP GPS 3.3V 3.3MA TSLP7-1
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
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BGA231N7E6330XTSA1 BGA231N7_v1.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30432f69f146012f78199f332d8d
BGA231N7E6330XTSA1
Hersteller: Infineon Technologies
Description: IC AMP LNA SIGE GPS TSLP-7
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
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BGA 825L6S E6327 BGA825L6S.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433cd75ebf013cf2684b7427e6
BGA 825L6S E6327
Hersteller: Infineon Technologies
Description: IC AMP LNA SIGE GPS 6TSLP
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
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CY7C65211-24LTXI Infineon-CY7C65211_USB-Serial_Single-Channel_(UART_I2C_SPI)_Bridge_with_CapSense_and_BCD-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eca9336437a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_
CY7C65211-24LTXI
Hersteller: Infineon Technologies
Description: IC USB TO SERIAL BRIDGE 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Function: Bridge, USB to I2C
Interface: UART
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Current - Supply: 20mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 24-QFN (4x4)
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 1177 Stücke:
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AnzahlPrivatkunde
4+5.89 EUR
10+4.41 EUR
25+4.05 EUR
100+3.64 EUR
490+3.34 EUR
980+3.25 EUR
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CY7C65215-32LTXI download
CY7C65215-32LTXI
Hersteller: Infineon Technologies
Description: IC USB TO SERIAL BRIDGE 32QFN
Packaging: Tray
Package / Case: 32-VFQFN Exposed Pad
Function: Bridge, USB to I2C
Interface: UART
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Current - Supply: 20mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 32-QFN (5x5)
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 2818 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.7 EUR
10+5.05 EUR
25+4.63 EUR
100+4.18 EUR
490+3.83 EUR
980+3.72 EUR
1470+3.67 EUR
Mindestbestellmenge: 4 Stücke
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IRS21867STRPBF infineon-irs21867s-datasheet-en.pdf
IRS21867STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: CMOS, TTL
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 22ns, 18ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 6729 Stücke:
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AnzahlPrivatkunde
6+4.02 EUR
10+2.98 EUR
25+2.71 EUR
100+2.43 EUR
250+2.28 EUR
500+2.21 EUR
Mindestbestellmenge: 6 Stücke
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PVT312LS-TPBF pvt312.pdf?fileId=5546d462533600a4015356841f1c2960
PVT312LS-TPBF
Hersteller: Infineon Technologies
Description: SSR RELAY SPST-NO 170MA 0-250V
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 170 mA
Approval Agency: UL
Supplier Device Package: 6-SMT
Part Status: Active
Voltage - Load: 0 V ~ 250 V
On-State Resistance (Max): 15 Ohms
auf Bestellung 11420 Stücke:
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AnzahlPrivatkunde
3+9.04 EUR
10+8.06 EUR
25+7.7 EUR
50+7.43 EUR
100+7.18 EUR
250+6.85 EUR
Mindestbestellmenge: 3 Stücke
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IRFR3410TRPBF description irfr3410pbf.pdf?fileId=5546d462533600a401535630fe762090
IRFR3410TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 31A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 18A, 10V
Power Dissipation (Max): 3W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 25 V
auf Bestellung 2062 Stücke:
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AnzahlPrivatkunde
8+2.93 EUR
12+1.86 EUR
100+1.23 EUR
500+0.96 EUR
1000+0.88 EUR
Mindestbestellmenge: 8 Stücke
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BSC010N04LSATMA1 BSC010N04LS_rev1+1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a3043353fdc16013552c1c63647c4
BSC010N04LSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 38A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 20 V
auf Bestellung 21988 Stücke:
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AnzahlPrivatkunde
5+4.3 EUR
10+2.75 EUR
100+1.87 EUR
500+1.49 EUR
1000+1.37 EUR
2000+1.33 EUR
Mindestbestellmenge: 5 Stücke
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BSC010N04LSATMA1 BSC010N04LS_rev1+1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a3043353fdc16013552c1c63647c4
BSC010N04LSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 38A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 20 V
auf Bestellung 20000 Stücke:
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AnzahlPrivatkunde
5000+1.15 EUR
10000+1.09 EUR
Mindestbestellmenge: 5000 Stücke
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BSC014N04LSIATMA1 BSC014N04LSI_rev2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a3043353fdc16013552fc8f274806
BSC014N04LSIATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 31A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.45mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 20 V
auf Bestellung 41852 Stücke:
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AnzahlPrivatkunde
4+5.26 EUR
10+3.39 EUR
100+2.33 EUR
500+1.87 EUR
1000+1.76 EUR
Mindestbestellmenge: 4 Stücke
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