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TLE72762DATMA1 TLE72762DATMA1 Infineon Technologies Infineon-TLE7276-2-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf0159f9e96aef3f08 Description: IC REG LIN 5V 300MA TO252-5-11
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 30 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-TO252-5-11
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 200mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 40 µA
Qualification: AEC-Q100
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ESD101B102ELSE6327XTSA1 ESD101B102ELSE6327XTSA1 Infineon Technologies ESD101_B1_02series_rev_1_0.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433e9d5d11013e9d6619a20002 Description: TVS DIODE 5.5VWM 30VC PGTSSLP24
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-TSSLP-2-4
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.3V (Typ)
Voltage - Clamping (Max) @ Ipp: 30V
Power Line Protection: No
Part Status: Active
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15000+0.13 EUR
45000+0.12 EUR
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ESD102U102ELSE6327XTSA1 ESD102U102ELSE6327XTSA1 Infineon Technologies ESD102-U1-02ELS_rev_1_0.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433d346a2d013d3a9e3c1b38ec Description: TVS DIODE 3.3VWM 11VC PGTSSLP23
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSSLP-2-3
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.5V (Typ)
Voltage - Clamping (Max) @ Ipp: 11V (Typ)
Power Line Protection: No
Part Status: Active
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15000+0.18 EUR
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ESD103B102ELSE6327XTSA1 ESD103B102ELSE6327XTSA1 Infineon Technologies ESD103-B1-02series_2.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433ee50ba8013eea95d0b1150b Description: TVS DIODE 15VWM 48V PGTSSLP24
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.13pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A (100ns)
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: PG-TSSLP-2-4
Bidirectional Channels: 1
Voltage - Breakdown (Min): 21V (Typ)
Voltage - Clamping (Max) @ Ipp: 48V (Typ)
Power Line Protection: No
Part Status: Active
auf Bestellung 158646 Stücke:
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ESD112B102ELSE6327XTSA1 ESD112B102ELSE6327XTSA1 Infineon Technologies ESD112-B1-02.pdf Description: TVS DIODE 5.3VWM 21VC TSSLP-2-4
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.23pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: TSSLP-2-4
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 21V
Power Line Protection: No
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ESD200B1CSP0201XTSA1 ESD200B1CSP0201XTSA1 Infineon Technologies Infineon-ESD200-B1-CSP0201-DS-v01_00-EN.pdf?fileId=5546d462503812bb0150854d43ae4c9a Description: TVS DIODE 5.5VWM 13VC
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 6.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13V (Typ)
Power Line Protection: No
Part Status: Active
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ESD205B102ELSE6327XTSA1 ESD205B102ELSE6327XTSA1 Infineon Technologies ESD205-B1.pdf Description: TVS DIODE 5.5VWM 9VC
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 7pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Power - Peak Pulse: 30W
Power Line Protection: No
Part Status: Obsolete
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ESD5V5S1B02LRHE6327XTSA1 ESD5V5S1B02LRHE6327XTSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: TVS DIODE 5.5VWM 9.2VC
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 24pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 9.2V (Typ)
Power - Peak Pulse: 150W
Power Line Protection: No
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ESD102U2099ELE6327XTSA1 ESD102U2099ELE6327XTSA1 Infineon Technologies ESD102-U2-099EL.pdf Description: TVS DIODE 3.3VWM 11VC
Packaging: Tape & Reel (TR)
Package / Case: 4-WFBGA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Unidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 11V (Typ)
Power Line Protection: No
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ESD201B203LRHE6327XTSA1 ESD201B203LRHE6327XTSA1 Infineon Technologies ESD201-B2-03LRH.pdf Description: TVS DIODE 5.5VWM 12.1V PGTSLP3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-TSLP-3
Bidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 12.1V (Typ)
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
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ESD102U405LE6327XTSA1 ESD102U405LE6327XTSA1 Infineon Technologies ESD102-U4-05L.pdf Description: TVS DIODE 3.3VWM TSLP-5-2
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BGF120AE6327XTSA1 BGF120AE6327XTSA1 Infineon Technologies BGF120A.pdf Description: TVS DIODE 5.3VWM 31VC
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 31V
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 2
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Current - Peak Pulse (10/1000µs): 30A (8/20µs)
Capacitance @ Frequency: 1.5pF @ 1MHz
Applications: Ethernet, HDMI, RF Antenna
Operating Temperature: -40°C ~ 125°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 4-WFBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLE72762DATMA1 TLE72762DATMA1 Infineon Technologies Infineon-TLE7276-2-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf0159f9e96aef3f08 Description: IC REG LIN 5V 300MA TO252-5-11
Qualification: AEC-Q100
Grade: Automotive
Current - Supply (Max): 40 µA
Protection Features: Over Current, Over Temperature, Short Circuit
Voltage Dropout (Max): 0.5V @ 200mA
PSRR: 60dB (100Hz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-TO252-5-11
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 30 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Packaging: Cut Tape (CT)
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ESD101B102ELSE6327XTSA1 ESD101B102ELSE6327XTSA1 Infineon Technologies ESD101_B1_02series_rev_1_0.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433e9d5d11013e9d6619a20002 Description: TVS DIODE 5.5VWM 30VC PGTSSLP24
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-TSSLP-2-4
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.3V (Typ)
Voltage - Clamping (Max) @ Ipp: 30V
Power Line Protection: No
Part Status: Active
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27+0.8 EUR
44+0.48 EUR
61+0.35 EUR
100+0.3 EUR
500+0.23 EUR
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ESD102U102ELSE6327XTSA1 ESD102U102ELSE6327XTSA1 Infineon Technologies ESD102-U1-02ELS_rev_1_0.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433d346a2d013d3a9e3c1b38ec Description: TVS DIODE 3.3VWM 11VC PGTSSLP23
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSSLP-2-3
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.5V (Typ)
Voltage - Clamping (Max) @ Ipp: 11V (Typ)
Power Line Protection: No
Part Status: Active
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50+0.45 EUR
100+0.4 EUR
500+0.3 EUR
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ESD103B102ELSE6327XTSA1 ESD103B102ELSE6327XTSA1 Infineon Technologies ESD103-B1-02series_2.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433ee50ba8013eea95d0b1150b Description: TVS DIODE 15VWM 48V PGTSSLP24
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.13pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A (100ns)
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: PG-TSSLP-2-4
Bidirectional Channels: 1
Voltage - Breakdown (Min): 21V (Typ)
Voltage - Clamping (Max) @ Ipp: 48V (Typ)
Power Line Protection: No
Part Status: Active
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56+0.38 EUR
100+0.33 EUR
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ESD112B102ELSE6327XTSA1 ESD112B102ELSE6327XTSA1 Infineon Technologies ESD112-B1-02.pdf Description: TVS DIODE 5.3VWM 21VC TSSLP-2-4
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.23pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: TSSLP-2-4
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 21V
Power Line Protection: No
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ESD200B1CSP0201XTSA1 ESD200B1CSP0201XTSA1 Infineon Technologies Infineon-ESD200-B1-CSP0201-DS-v01_00-EN.pdf?fileId=5546d462503812bb0150854d43ae4c9a Description: TVS DIODE 5.5VWM 13VC
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 6.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13V (Typ)
Power Line Protection: No
Part Status: Active
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ESD205B102ELSE6327XTSA1 ESD205B102ELSE6327XTSA1 Infineon Technologies ESD205-B1.pdf Description: TVS DIODE 5.5VWM 9VC
Packaging: Cut Tape (CT)
Package / Case: 2-SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 7pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Power - Peak Pulse: 30W
Power Line Protection: No
Part Status: Obsolete
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ESD5V5S1B02LRHE6327XTSA1 ESD5V5S1B02LRHE6327XTSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: TVS DIODE 5.5VWM 9.2VC
Packaging: Cut Tape (CT)
Package / Case: 2-SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 24pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 9.2V (Typ)
Power - Peak Pulse: 150W
Power Line Protection: No
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ESD102U2099ELE6327XTSA1 ESD102U2099ELE6327XTSA1 Infineon Technologies ESD102-U2-099EL.pdf Description: TVS DIODE 3.3VWM 11VC
Packaging: Cut Tape (CT)
Package / Case: 4-WFBGA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Unidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 11V (Typ)
Power Line Protection: No
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ESD102U405LE6327XTSA1 ESD102U405LE6327XTSA1 Infineon Technologies ESD102-U4-05L.pdf Description: TVS DIODE 3.3VWM TSLP-5-2
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BGF120AE6327XTSA1 BGF120AE6327XTSA1 Infineon Technologies BGF120A.pdf Description: TVS DIODE 5.3VWM 31VC
Packaging: Cut Tape (CT)
Package / Case: 4-WFBGA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Ethernet, HDMI, RF Antenna
Capacitance @ Frequency: 1.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 30A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 31V
Power Line Protection: No
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40+0.52 EUR
49+0.44 EUR
100+0.37 EUR
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IR3565BMTRPBF IR3565BMTRPBF Infineon Technologies IR3565B.pdf Description: IC REG CTRLR INTEL 2OUT 48QFN
Operating Temperature: -40°C ~ 85°C
Voltage - Input: 3.3V
Number of Outputs: 2
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Supplier Device Package: 48-QFN (6x6)
Applications: Controller, Intel VR12, VR12.5, AMD SVI1, SVI2
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IPB65R045C7ATMA1 IPB65R045C7ATMA1 Infineon Technologies DS_IPB65R045C7_2_1.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30433e78ea82013e790478550043 Description: MOSFET N-CH 650V 46A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4V @ 1.25mA
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 24.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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IPB65R225C7ATMA1 IPB65R225C7ATMA1 Infineon Technologies DS_IPB65R225C7_2_0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30433e78ea82013e7921c0d800bc Description: MOSFET N-CH 650V 11A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4V @ 240µA
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 4.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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IPP65R225C7XKSA1 IPP65R225C7XKSA1 Infineon Technologies DS_IPP65R225C7_2_0.pdf?folderId=db3a30431ff98815012019af55de3f2c&fileId=db3a30433e78ea82013e7929d3340105 Description: MOSFET N-CH 650V 11A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4V @ 240µA
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 4.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IPW65R045C7FKSA1 IPW65R045C7FKSA1 Infineon Technologies DS_IPW65R045C7_2_1.pdf?folderId=db3a30431ff98815012019af55de3f2c&fileId=db3a30433e78ea82013e7901c1200031 Description: MOSFET N-CH 650V 46A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3-1
Vgs(th) (Max) @ Id: 4V @ 1.25mA
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 24.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IPB65R045C7ATMA1 IPB65R045C7ATMA1 Infineon Technologies DS_IPB65R045C7_2_1.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30433e78ea82013e790478550043 Description: MOSFET N-CH 650V 46A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4V @ 1.25mA
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 24.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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IR3846MTRPBF IR3846MTRPBF Infineon Technologies ir3846m.pdf?fileId=5546d462533600a4015355d568a417ee Description: IC REG BUCK ADJ 35A 34PQFN
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IRFS7434-7PPBF IRFS7434-7PPBF Infineon Technologies irfs7434-7ppbf.pdf?fileId=5546d462533600a40153563a7c0721ce Description: MOSFET N-CH 40V 240A D2PAK
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10250 pF @ 25 V
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IRFS7434TRL7PP IRFS7434TRL7PP Infineon Technologies irfs7434-7ppbf.pdf?fileId=5546d462533600a40153563a7c0721ce Description: MOSFET N-CH 40V 240A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: D2PAK-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10250 pF @ 25 V
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IRFR7446PBF IRFR7446PBF Infineon Technologies irfr7446pbf.pdf?fileId=5546d462533600a401535635a778211a Description: MOSFET N-CH 40V 56A TO252
Input Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Power Dissipation (Max): 98W (Tc)
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 56A, 10V
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IRFS7434TRL7PP IRFS7434TRL7PP Infineon Technologies irfs7434-7ppbf.pdf?fileId=5546d462533600a40153563a7c0721ce Description: MOSFET N-CH 40V 240A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: D2PAK-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10250 pF @ 25 V
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IRFR7446TRPBF IRFR7446TRPBF Infineon Technologies irfr7446pbf.pdf?fileId=5546d462533600a401535635a778211a Description: MOSFET N-CH 40V 56A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 56A, 10V
Power Dissipation (Max): 98W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 25 V
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BTN8960TAAUMA1 BTN8960TAAUMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IC HALF BRIDGE DRVR 30A TO263-7
Technology: DMOS
Current - Peak Output: 70A
Current - Output / Channel: 30A
Applications: DC Motors, General Purpose
Rds On (Typ): 7.5mOhm LS, 6.7mOhm HS
Voltage - Supply: 6V ~ 40V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Logic
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Features: Latch Function, Slew Rate Controlled, Status Flag
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Load Type: Inductive
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Supplier Device Package: PG-TO263-7-1
Voltage - Load: 6V ~ 40V
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BTN8980TAAUMA1 BTN8980TAAUMA1 Infineon Technologies Automotive_Application_Guide_2016_BR.PDF?fileId=5546d46158f23e7b0158f8cac4de0051 Description: IC HALF BRIDGE DRVR 50A TO263-7
Part Status: Obsolete
Load Type: Inductive
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Supplier Device Package: PG-TO263-7-1
Voltage - Load: 6V ~ 40V
Technology: DMOS
Current - Peak Output: 117A
Current - Output / Channel: 50A
Applications: DC Motors, General Purpose
Rds On (Typ): 4.7mOhm LS, 5.3mOhm HS
Voltage - Supply: 6V ~ 40V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Logic
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Features: Latch Function, Slew Rate Controlled, Status Flag
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IGP40N65F5XKSA1 IGP40N65F5XKSA1 Infineon Technologies Infineon-IGW40N65F5-DataSheet-v02_01-EN.pdf?fileId=5546d4624b0b249c014b91b9dc795778 Description: IGBT 650V 74A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO220-3
Td (on/off) @ 25°C: 19ns/160ns
Switching Energy: 360µJ (on), 100µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 255 W
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IGW40N65F5FKSA1 IGW40N65F5FKSA1 Infineon Technologies Infineon-IGW40N65F5-DataSheet-v02_01-EN.pdf?fileId=5546d4624b0b249c014b91b9dc795778 Description: IGBT 650V 74A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 19ns/160ns
Switching Energy: 360µJ (on), 100µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 255 W
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IGW40N65H5FKSA1 IGW40N65H5FKSA1 Infineon Technologies DS_IGP_IGW40N65H5+1.1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433af5291e013af52fd5b600b6 Description: IGBT 650V 74A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 22ns/165ns
Switching Energy: 390µJ (on), 120µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 255 W
auf Bestellung 257 Stücke:
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IGW50N65F5FKSA1 IGW50N65F5FKSA1 Infineon Technologies DS_IGW50N65F5+1.1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433af5291e013af8ed558f5bc5 Description: IGBT 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 21ns/175ns
Switching Energy: 490µJ (on), 160µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 305 W
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IGW50N65H5FKSA1 IGW50N65H5FKSA1 Infineon Technologies DS_IGW50N65H5+1.1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433af5291e013af900f52c5c25 Description: IGBT 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 21ns/180ns
Switching Energy: 520µJ (on), 180µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 305 W
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IKA08N65F5XKSA1 IKA08N65F5XKSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IGBT 650V 10.8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 41 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
Supplier Device Package: PG-TO220-3
Td (on/off) @ 25°C: 10ns/116ns
Switching Energy: 70µJ (on), 20µJ (off)
Test Condition: 400V, 4A, 48Ohm, 15V
Gate Charge: 22 nC
Part Status: Active
Current - Collector (Ic) (Max): 10.8 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 31.2 W
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IKA08N65H5XKSA1 IKA08N65H5XKSA1 Infineon Technologies DS_IKA08N65H5+1.1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433af5291e013af95976745d19 Description: IGBT 650V 10.8A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
Supplier Device Package: PG-TO220-3-111
Td (on/off) @ 25°C: 11ns/115ns
Switching Energy: 70µJ (on), 30µJ (off)
Test Condition: 400V, 4A, 48Ohm, 15V
Gate Charge: 22 nC
Part Status: Active
Current - Collector (Ic) (Max): 10.8 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 31.2 W
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IKA15N65F5XKSA1 IKA15N65F5XKSA1 Infineon Technologies DS_IKA15N65F5+1.1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433af5291e013af98304715d4b Description: IGBT 650V 14A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO220-FP
Td (on/off) @ 25°C: 17ns/150ns
Switching Energy: 130µJ (on), 40µJ (off)
Test Condition: 400V, 7.5A, 39Ohm, 15V
Gate Charge: 38 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 33.3 W
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IKA15N65H5XKSA1 IKA15N65H5XKSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IGBT 650V 14A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO220-3-111
Td (on/off) @ 25°C: 17ns/160ns
Switching Energy: 120µJ (on), 50µJ (off)
Test Condition: 400V, 7.5A, 39Ohm, 15V
Gate Charge: 38 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 33.3 W
Produkt ist nicht verfügbar
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IKP08N65H5XKSA1 IKP08N65H5XKSA1 Infineon Technologies DS_IKP08N65H5+1.1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433af5291e013af9d731ee5df3 Description: IGBT 650V 18A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
Supplier Device Package: PG-TO220-3-111
Td (on/off) @ 25°C: 11ns/115ns
Switching Energy: 70µJ (on), 30µJ (off)
Test Condition: 400V, 4A, 48Ohm, 15V
Gate Charge: 22 nC
Part Status: Active
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 70 W
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IKP15N65F5XKSA1 IKP15N65F5XKSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IGBT 650V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO220-3
Td (on/off) @ 25°C: 17ns/150ns
Switching Energy: 130µJ (on), 40µJ (off)
Test Condition: 400V, 7.5A, 39Ohm, 15V
Gate Charge: 38 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 105 W
Produkt ist nicht verfügbar
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IKP15N65H5XKSA1 IKP15N65H5XKSA1 Infineon Technologies DS_IKP15N65H5+1.1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433af5291e013afa3708e65ee0 Description: IGBT 650V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO220-3
Td (on/off) @ 25°C: 17ns/160ns
Switching Energy: 120µJ (on), 50µJ (off)
Test Condition: 400V, 7.5A, 39Ohm, 15V
Gate Charge: 38 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 105 W
Produkt ist nicht verfügbar
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IKP40N65F5XKSA1 IKP40N65F5XKSA1 Infineon Technologies DS_IKP_IKW40N65F5+1.1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433af5291e013afa60c5395f31 Description: IGBT 650V 74A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO220-3
Td (on/off) @ 25°C: 19ns/160ns
Switching Energy: 360µJ (on), 100µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 255 W
Produkt ist nicht verfügbar
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IKW40N65H5FKSA1 IKW40N65H5FKSA1 Infineon Technologies DS_IKP_IKW40N65H5+1.1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433af5291e013afa8ba6fb6078 Description: IGBT 650V 74A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 62 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 22ns/165ns
Switching Energy: 390µJ (on), 120µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 255 W
auf Bestellung 469 Stücke:
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3+8.19 EUR
30+4.52 EUR
120+3.71 EUR
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IRAUDAMP19 IRAUDAMP19 Infineon Technologies iraudamp19.pdf?fileId=5546d462533600a40153569a9fab2bed Description: EVAL BOARD FOR IR4301
Packaging: Box
Output Type: 2-Channel (Stereo)
Amplifier Type: Class D
Contents: Board(s)
Voltage - Supply: 41V ~ 52V
Max Output Power x Channels @ Load: 100W x 2 @ 4Ohm
Board Type: Fully Populated
Utilized IC / Part: IR4301
Supplied Contents: Board(s)
Part Status: Active
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1+396.32 EUR
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IRAUDAMP21 IRAUDAMP21 Infineon Technologies iraudamp21.pdf?fileId=5546d462533600a40153569aa9322bef Description: EVAL BOARD FOR IR4321
Part Status: Active
Supplied Contents: Board(s)
Utilized IC / Part: IR4321
Board Type: Fully Populated
Max Output Power x Channels @ Load: 120W x 2 @ 3Ohm
Voltage - Supply: ±12V ~ 18V
Amplifier Type: Class D
Output Type: 2-Channel (Stereo)
Packaging: Box
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1+580.15 EUR
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IRAUDAMP22 IRAUDAMP22 Infineon Technologies iraudamp22.pdf?fileId=5546d462533600a40153569ab2dc2bf1 Description: EVAL BOARD FOR IR4322
Part Status: Active
Supplied Contents: Board(s)
Utilized IC / Part: IR4322
Board Type: Fully Populated
Max Output Power x Channels @ Load: 80W x 2 @ 4Ohm
Voltage - Supply: ±12V ~ 13.5V
Amplifier Type: Class D
Output Type: 2-Channel (Stereo)
Packaging: Box
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1+514.95 EUR
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IRS2505LTRPBF IRS2505LTRPBF Infineon Technologies irs2505lpbf.pdf?fileId=5546d462533600a40153567ad42c2819 Description: IC PFC CTRLR CRM SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 10.5V ~ 20.8V
Mode: Critical Conduction (CRM)
Supplier Device Package: SOT-23-5
Part Status: Obsolete
Current - Startup: 60 µA
Produkt ist nicht verfügbar
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IRS2538DSPBF IRS2538DSPBF Infineon Technologies Part_Number_Guide_Web.pdf Description: IC PFC/BALLAST CNTRL 85.6KHZ 8SO
Produkt ist nicht verfügbar
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IRS2505LTRPBF IRS2505LTRPBF Infineon Technologies irs2505lpbf.pdf?fileId=5546d462533600a40153567ad42c2819 Description: IC PFC CTRLR CRM SOT23-5
Current - Startup: 60 µA
Part Status: Obsolete
Supplier Device Package: SOT-23-5
Mode: Critical Conduction (CRM)
Voltage - Supply: 10.5V ~ 20.8V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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IDP08E65D1XKSA1 IDP08E65D1XKSA1 Infineon Technologies IDP08E65D1_1_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30433d6895c8013d68d2c3c80025 Description: DIODE STANDARD 650V 8A TO2202
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 80 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar
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IDP15E65D1XKSA1 IDP15E65D1XKSA1 Infineon Technologies IDP15E65D1_1_1+%282%29.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30433d68e984013d691402dd0153 Description: DIODE STANDARD 650V 15A TO2202
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 15A
Technology: Standard
Reverse Recovery Time (trr): 114 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar
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IDW30E65D1FKSA1 IDW30E65D1FKSA1 Infineon Technologies DS_IDW30E65D1_1_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30433d68e984013d6929d1da01cc Description: DIODE GP 650V 60A TO247-3-1
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: PG-TO247-3-1
Current - Average Rectified (Io): 60A
Technology: Standard
Reverse Recovery Time (trr): 115 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
auf Bestellung 259 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.9 EUR
30+3.18 EUR
120+2.57 EUR
Mindestbestellmenge: 4 Stücke
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TLE72762DATMA1 Infineon-TLE7276-2-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf0159f9e96aef3f08
TLE72762DATMA1
Hersteller: Infineon Technologies
Description: IC REG LIN 5V 300MA TO252-5-11
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 30 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-TO252-5-11
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 200mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 40 µA
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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ESD101B102ELSE6327XTSA1 ESD101_B1_02series_rev_1_0.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433e9d5d11013e9d6619a20002
ESD101B102ELSE6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 5.5VWM 30VC PGTSSLP24
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-TSSLP-2-4
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.3V (Typ)
Voltage - Clamping (Max) @ Ipp: 30V
Power Line Protection: No
Part Status: Active
auf Bestellung 105000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
15000+0.13 EUR
45000+0.12 EUR
Mindestbestellmenge: 15000 Stücke
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ESD102U102ELSE6327XTSA1 ESD102-U1-02ELS_rev_1_0.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433d346a2d013d3a9e3c1b38ec
ESD102U102ELSE6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 3.3VWM 11VC PGTSSLP23
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSSLP-2-3
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.5V (Typ)
Voltage - Clamping (Max) @ Ipp: 11V (Typ)
Power Line Protection: No
Part Status: Active
auf Bestellung 210000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
15000+0.18 EUR
45000+0.17 EUR
Mindestbestellmenge: 15000 Stücke
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ESD103B102ELSE6327XTSA1 ESD103-B1-02series_2.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433ee50ba8013eea95d0b1150b
ESD103B102ELSE6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 15VWM 48V PGTSSLP24
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.13pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A (100ns)
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: PG-TSSLP-2-4
Bidirectional Channels: 1
Voltage - Breakdown (Min): 21V (Typ)
Voltage - Clamping (Max) @ Ipp: 48V (Typ)
Power Line Protection: No
Part Status: Active
auf Bestellung 158646 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
15000+0.14 EUR
45000+0.13 EUR
Mindestbestellmenge: 15000 Stücke
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ESD112B102ELSE6327XTSA1 ESD112-B1-02.pdf
ESD112B102ELSE6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 5.3VWM 21VC TSSLP-2-4
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.23pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: TSSLP-2-4
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 21V
Power Line Protection: No
Produkt ist nicht verfügbar
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ESD200B1CSP0201XTSA1 Infineon-ESD200-B1-CSP0201-DS-v01_00-EN.pdf?fileId=5546d462503812bb0150854d43ae4c9a
ESD200B1CSP0201XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 5.5VWM 13VC
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 6.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13V (Typ)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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ESD205B102ELSE6327XTSA1 ESD205-B1.pdf
ESD205B102ELSE6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 5.5VWM 9VC
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 7pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Power - Peak Pulse: 30W
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
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ESD5V5S1B02LRHE6327XTSA1 fundamentals-of-power-semiconductors
ESD5V5S1B02LRHE6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 5.5VWM 9.2VC
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 24pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 9.2V (Typ)
Power - Peak Pulse: 150W
Power Line Protection: No
Produkt ist nicht verfügbar
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ESD102U2099ELE6327XTSA1 ESD102-U2-099EL.pdf
ESD102U2099ELE6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 3.3VWM 11VC
Packaging: Tape & Reel (TR)
Package / Case: 4-WFBGA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Unidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 11V (Typ)
Power Line Protection: No
Produkt ist nicht verfügbar
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ESD201B203LRHE6327XTSA1 ESD201-B2-03LRH.pdf
ESD201B203LRHE6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 5.5VWM 12.1V PGTSLP3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-TSLP-3
Bidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 12.1V (Typ)
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
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ESD102U405LE6327XTSA1 ESD102-U4-05L.pdf
ESD102U405LE6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 3.3VWM TSLP-5-2
Produkt ist nicht verfügbar
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BGF120AE6327XTSA1 BGF120A.pdf
BGF120AE6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 5.3VWM 31VC
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 31V
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 2
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Current - Peak Pulse (10/1000µs): 30A (8/20µs)
Capacitance @ Frequency: 1.5pF @ 1MHz
Applications: Ethernet, HDMI, RF Antenna
Operating Temperature: -40°C ~ 125°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 4-WFBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLE72762DATMA1 Infineon-TLE7276-2-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf0159f9e96aef3f08
TLE72762DATMA1
Hersteller: Infineon Technologies
Description: IC REG LIN 5V 300MA TO252-5-11
Qualification: AEC-Q100
Grade: Automotive
Current - Supply (Max): 40 µA
Protection Features: Over Current, Over Temperature, Short Circuit
Voltage Dropout (Max): 0.5V @ 200mA
PSRR: 60dB (100Hz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-TO252-5-11
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 30 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Packaging: Cut Tape (CT)
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
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ESD101B102ELSE6327XTSA1 ESD101_B1_02series_rev_1_0.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433e9d5d11013e9d6619a20002
ESD101B102ELSE6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 5.5VWM 30VC PGTSSLP24
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-TSSLP-2-4
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.3V (Typ)
Voltage - Clamping (Max) @ Ipp: 30V
Power Line Protection: No
Part Status: Active
auf Bestellung 113217 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
27+0.8 EUR
44+0.48 EUR
61+0.35 EUR
100+0.3 EUR
500+0.23 EUR
Mindestbestellmenge: 27 Stücke
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ESD102U102ELSE6327XTSA1 ESD102-U1-02ELS_rev_1_0.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433d346a2d013d3a9e3c1b38ec
ESD102U102ELSE6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 3.3VWM 11VC PGTSSLP23
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSSLP-2-3
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.5V (Typ)
Voltage - Clamping (Max) @ Ipp: 11V (Typ)
Power Line Protection: No
Part Status: Active
auf Bestellung 217163 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
21+1.02 EUR
34+0.63 EUR
50+0.45 EUR
100+0.4 EUR
500+0.3 EUR
Mindestbestellmenge: 21 Stücke
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ESD103B102ELSE6327XTSA1 ESD103-B1-02series_2.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433ee50ba8013eea95d0b1150b
ESD103B102ELSE6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 15VWM 48V PGTSSLP24
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.13pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A (100ns)
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: PG-TSSLP-2-4
Bidirectional Channels: 1
Voltage - Breakdown (Min): 21V (Typ)
Voltage - Clamping (Max) @ Ipp: 48V (Typ)
Power Line Protection: No
Part Status: Active
auf Bestellung 159151 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
25+0.83 EUR
41+0.52 EUR
56+0.38 EUR
100+0.33 EUR
500+0.25 EUR
Mindestbestellmenge: 25 Stücke
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ESD112B102ELSE6327XTSA1 ESD112-B1-02.pdf
ESD112B102ELSE6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 5.3VWM 21VC TSSLP-2-4
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.23pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: TSSLP-2-4
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 21V
Power Line Protection: No
Produkt ist nicht verfügbar
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ESD200B1CSP0201XTSA1 Infineon-ESD200-B1-CSP0201-DS-v01_00-EN.pdf?fileId=5546d462503812bb0150854d43ae4c9a
ESD200B1CSP0201XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 5.5VWM 13VC
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 6.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13V (Typ)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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ESD205B102ELSE6327XTSA1 ESD205-B1.pdf
ESD205B102ELSE6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 5.5VWM 9VC
Packaging: Cut Tape (CT)
Package / Case: 2-SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 7pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Power - Peak Pulse: 30W
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
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ESD5V5S1B02LRHE6327XTSA1 fundamentals-of-power-semiconductors
ESD5V5S1B02LRHE6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 5.5VWM 9.2VC
Packaging: Cut Tape (CT)
Package / Case: 2-SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 24pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 9.2V (Typ)
Power - Peak Pulse: 150W
Power Line Protection: No
Produkt ist nicht verfügbar
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ESD102U2099ELE6327XTSA1 ESD102-U2-099EL.pdf
ESD102U2099ELE6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 3.3VWM 11VC
Packaging: Cut Tape (CT)
Package / Case: 4-WFBGA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Unidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 11V (Typ)
Power Line Protection: No
Produkt ist nicht verfügbar
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ESD102U405LE6327XTSA1 ESD102-U4-05L.pdf
ESD102U405LE6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 3.3VWM TSLP-5-2
Produkt ist nicht verfügbar
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BGF120AE6327XTSA1 BGF120A.pdf
BGF120AE6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 5.3VWM 31VC
Packaging: Cut Tape (CT)
Package / Case: 4-WFBGA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Ethernet, HDMI, RF Antenna
Capacitance @ Frequency: 1.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 30A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 31V
Power Line Protection: No
auf Bestellung 223 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
40+0.52 EUR
49+0.44 EUR
100+0.37 EUR
Mindestbestellmenge: 40 Stücke
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IR3565BMTRPBF IR3565B.pdf
IR3565BMTRPBF
Hersteller: Infineon Technologies
Description: IC REG CTRLR INTEL 2OUT 48QFN
Operating Temperature: -40°C ~ 85°C
Voltage - Input: 3.3V
Number of Outputs: 2
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Supplier Device Package: 48-QFN (6x6)
Applications: Controller, Intel VR12, VR12.5, AMD SVI1, SVI2
Produkt ist nicht verfügbar
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IPB65R045C7ATMA1 DS_IPB65R045C7_2_1.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30433e78ea82013e790478550043
IPB65R045C7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 46A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4V @ 1.25mA
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 24.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPB65R225C7ATMA1 DS_IPB65R225C7_2_0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30433e78ea82013e7921c0d800bc
IPB65R225C7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 11A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4V @ 240µA
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 4.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPP65R225C7XKSA1 DS_IPP65R225C7_2_0.pdf?folderId=db3a30431ff98815012019af55de3f2c&fileId=db3a30433e78ea82013e7929d3340105
IPP65R225C7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 11A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4V @ 240µA
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 4.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
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IPW65R045C7FKSA1 DS_IPW65R045C7_2_1.pdf?folderId=db3a30431ff98815012019af55de3f2c&fileId=db3a30433e78ea82013e7901c1200031
IPW65R045C7FKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 46A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3-1
Vgs(th) (Max) @ Id: 4V @ 1.25mA
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 24.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 1612 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+22.51 EUR
30+13.49 EUR
60+12.42 EUR
120+11.52 EUR
510+10.17 EUR
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IPB65R045C7ATMA1 DS_IPB65R045C7_2_1.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30433e78ea82013e790478550043
IPB65R045C7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 46A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4V @ 1.25mA
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 24.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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IR3846MTRPBF ir3846m.pdf?fileId=5546d462533600a4015355d568a417ee
IR3846MTRPBF
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJ 35A 34PQFN
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 4000 Stücke
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IRFS7434-7PPBF irfs7434-7ppbf.pdf?fileId=5546d462533600a40153563a7c0721ce
IRFS7434-7PPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 240A D2PAK
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10250 pF @ 25 V
Produkt ist nicht verfügbar
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IRFS7434TRL7PP irfs7434-7ppbf.pdf?fileId=5546d462533600a40153563a7c0721ce
IRFS7434TRL7PP
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 240A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: D2PAK-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10250 pF @ 25 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+3.51 EUR
2400+3.21 EUR
Mindestbestellmenge: 800 Stücke
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IRFR7446PBF irfr7446pbf.pdf?fileId=5546d462533600a401535635a778211a
IRFR7446PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 56A TO252
Input Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Power Dissipation (Max): 98W (Tc)
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 56A, 10V
Produkt ist nicht verfügbar
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IRFS7434TRL7PP irfs7434-7ppbf.pdf?fileId=5546d462533600a40153563a7c0721ce
IRFS7434TRL7PP
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 240A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: D2PAK-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10250 pF @ 25 V
auf Bestellung 4036 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.42 EUR
10+6.26 EUR
50+4.89 EUR
100+4.45 EUR
Mindestbestellmenge: 3 Stücke
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IRFR7446TRPBF irfr7446pbf.pdf?fileId=5546d462533600a401535635a778211a
IRFR7446TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 56A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 56A, 10V
Power Dissipation (Max): 98W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 25 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2000+0.99 EUR
6000+0.88 EUR
Mindestbestellmenge: 2000 Stücke
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BTN8960TAAUMA1 fundamentals-of-power-semiconductors
BTN8960TAAUMA1
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRVR 30A TO263-7
Technology: DMOS
Current - Peak Output: 70A
Current - Output / Channel: 30A
Applications: DC Motors, General Purpose
Rds On (Typ): 7.5mOhm LS, 6.7mOhm HS
Voltage - Supply: 6V ~ 40V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Logic
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Features: Latch Function, Slew Rate Controlled, Status Flag
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Load Type: Inductive
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Supplier Device Package: PG-TO263-7-1
Voltage - Load: 6V ~ 40V
Produkt ist nicht verfügbar
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BTN8980TAAUMA1 Automotive_Application_Guide_2016_BR.PDF?fileId=5546d46158f23e7b0158f8cac4de0051
BTN8980TAAUMA1
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRVR 50A TO263-7
Part Status: Obsolete
Load Type: Inductive
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Supplier Device Package: PG-TO263-7-1
Voltage - Load: 6V ~ 40V
Technology: DMOS
Current - Peak Output: 117A
Current - Output / Channel: 50A
Applications: DC Motors, General Purpose
Rds On (Typ): 4.7mOhm LS, 5.3mOhm HS
Voltage - Supply: 6V ~ 40V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Logic
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Features: Latch Function, Slew Rate Controlled, Status Flag
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IGP40N65F5XKSA1 Infineon-IGW40N65F5-DataSheet-v02_01-EN.pdf?fileId=5546d4624b0b249c014b91b9dc795778
IGP40N65F5XKSA1
Hersteller: Infineon Technologies
Description: IGBT 650V 74A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO220-3
Td (on/off) @ 25°C: 19ns/160ns
Switching Energy: 360µJ (on), 100µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 255 W
Produkt ist nicht verfügbar
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IGW40N65F5FKSA1 Infineon-IGW40N65F5-DataSheet-v02_01-EN.pdf?fileId=5546d4624b0b249c014b91b9dc795778
IGW40N65F5FKSA1
Hersteller: Infineon Technologies
Description: IGBT 650V 74A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 19ns/160ns
Switching Energy: 360µJ (on), 100µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 255 W
Produkt ist nicht verfügbar
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IGW40N65H5FKSA1 DS_IGP_IGW40N65H5+1.1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433af5291e013af52fd5b600b6
IGW40N65H5FKSA1
Hersteller: Infineon Technologies
Description: IGBT 650V 74A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 22ns/165ns
Switching Energy: 390µJ (on), 120µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 255 W
auf Bestellung 257 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.15 EUR
30+5.11 EUR
120+4.21 EUR
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IGW50N65F5FKSA1 DS_IGW50N65F5+1.1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433af5291e013af8ed558f5bc5
IGW50N65F5FKSA1
Hersteller: Infineon Technologies
Description: IGBT 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 21ns/175ns
Switching Energy: 490µJ (on), 160µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 305 W
auf Bestellung 228 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.13 EUR
30+5.07 EUR
120+4.16 EUR
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IGW50N65H5FKSA1 DS_IGW50N65H5+1.1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433af5291e013af900f52c5c25
IGW50N65H5FKSA1
Hersteller: Infineon Technologies
Description: IGBT 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 21ns/180ns
Switching Energy: 520µJ (on), 180µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 305 W
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.56 EUR
30+4.15 EUR
120+3.4 EUR
510+2.86 EUR
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IKA08N65F5XKSA1 fundamentals-of-power-semiconductors
IKA08N65F5XKSA1
Hersteller: Infineon Technologies
Description: IGBT 650V 10.8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 41 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
Supplier Device Package: PG-TO220-3
Td (on/off) @ 25°C: 10ns/116ns
Switching Energy: 70µJ (on), 20µJ (off)
Test Condition: 400V, 4A, 48Ohm, 15V
Gate Charge: 22 nC
Part Status: Active
Current - Collector (Ic) (Max): 10.8 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 31.2 W
Produkt ist nicht verfügbar
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IKA08N65H5XKSA1 DS_IKA08N65H5+1.1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433af5291e013af95976745d19
IKA08N65H5XKSA1
Hersteller: Infineon Technologies
Description: IGBT 650V 10.8A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
Supplier Device Package: PG-TO220-3-111
Td (on/off) @ 25°C: 11ns/115ns
Switching Energy: 70µJ (on), 30µJ (off)
Test Condition: 400V, 4A, 48Ohm, 15V
Gate Charge: 22 nC
Part Status: Active
Current - Collector (Ic) (Max): 10.8 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 31.2 W
Produkt ist nicht verfügbar
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IKA15N65F5XKSA1 DS_IKA15N65F5+1.1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433af5291e013af98304715d4b
IKA15N65F5XKSA1
Hersteller: Infineon Technologies
Description: IGBT 650V 14A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO220-FP
Td (on/off) @ 25°C: 17ns/150ns
Switching Energy: 130µJ (on), 40µJ (off)
Test Condition: 400V, 7.5A, 39Ohm, 15V
Gate Charge: 38 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 33.3 W
auf Bestellung 505 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.45 EUR
50+2.7 EUR
100+2.44 EUR
500+1.96 EUR
Mindestbestellmenge: 4 Stücke
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IKA15N65H5XKSA1 fundamentals-of-power-semiconductors
IKA15N65H5XKSA1
Hersteller: Infineon Technologies
Description: IGBT 650V 14A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO220-3-111
Td (on/off) @ 25°C: 17ns/160ns
Switching Energy: 120µJ (on), 50µJ (off)
Test Condition: 400V, 7.5A, 39Ohm, 15V
Gate Charge: 38 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 33.3 W
Produkt ist nicht verfügbar
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IKP08N65H5XKSA1 DS_IKP08N65H5+1.1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433af5291e013af9d731ee5df3
IKP08N65H5XKSA1
Hersteller: Infineon Technologies
Description: IGBT 650V 18A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
Supplier Device Package: PG-TO220-3-111
Td (on/off) @ 25°C: 11ns/115ns
Switching Energy: 70µJ (on), 30µJ (off)
Test Condition: 400V, 4A, 48Ohm, 15V
Gate Charge: 22 nC
Part Status: Active
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 70 W
Produkt ist nicht verfügbar
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IKP15N65F5XKSA1 fundamentals-of-power-semiconductors
IKP15N65F5XKSA1
Hersteller: Infineon Technologies
Description: IGBT 650V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO220-3
Td (on/off) @ 25°C: 17ns/150ns
Switching Energy: 130µJ (on), 40µJ (off)
Test Condition: 400V, 7.5A, 39Ohm, 15V
Gate Charge: 38 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 105 W
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
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IKP15N65H5XKSA1 DS_IKP15N65H5+1.1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433af5291e013afa3708e65ee0
IKP15N65H5XKSA1
Hersteller: Infineon Technologies
Description: IGBT 650V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO220-3
Td (on/off) @ 25°C: 17ns/160ns
Switching Energy: 120µJ (on), 50µJ (off)
Test Condition: 400V, 7.5A, 39Ohm, 15V
Gate Charge: 38 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 105 W
Produkt ist nicht verfügbar
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IKP40N65F5XKSA1 DS_IKP_IKW40N65F5+1.1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433af5291e013afa60c5395f31
IKP40N65F5XKSA1
Hersteller: Infineon Technologies
Description: IGBT 650V 74A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO220-3
Td (on/off) @ 25°C: 19ns/160ns
Switching Energy: 360µJ (on), 100µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 255 W
Produkt ist nicht verfügbar
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IKW40N65H5FKSA1 DS_IKP_IKW40N65H5+1.1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433af5291e013afa8ba6fb6078
IKW40N65H5FKSA1
Hersteller: Infineon Technologies
Description: IGBT 650V 74A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 62 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 22ns/165ns
Switching Energy: 390µJ (on), 120µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 255 W
auf Bestellung 469 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.19 EUR
30+4.52 EUR
120+3.71 EUR
Mindestbestellmenge: 3 Stücke
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IRAUDAMP19 iraudamp19.pdf?fileId=5546d462533600a40153569a9fab2bed
IRAUDAMP19
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR IR4301
Packaging: Box
Output Type: 2-Channel (Stereo)
Amplifier Type: Class D
Contents: Board(s)
Voltage - Supply: 41V ~ 52V
Max Output Power x Channels @ Load: 100W x 2 @ 4Ohm
Board Type: Fully Populated
Utilized IC / Part: IR4301
Supplied Contents: Board(s)
Part Status: Active
auf Bestellung 2 Stücke:
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AnzahlPrivatkunde
1+396.32 EUR
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IRAUDAMP21 iraudamp21.pdf?fileId=5546d462533600a40153569aa9322bef
IRAUDAMP21
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR IR4321
Part Status: Active
Supplied Contents: Board(s)
Utilized IC / Part: IR4321
Board Type: Fully Populated
Max Output Power x Channels @ Load: 120W x 2 @ 3Ohm
Voltage - Supply: ±12V ~ 18V
Amplifier Type: Class D
Output Type: 2-Channel (Stereo)
Packaging: Box
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+580.15 EUR
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IRAUDAMP22 iraudamp22.pdf?fileId=5546d462533600a40153569ab2dc2bf1
IRAUDAMP22
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR IR4322
Part Status: Active
Supplied Contents: Board(s)
Utilized IC / Part: IR4322
Board Type: Fully Populated
Max Output Power x Channels @ Load: 80W x 2 @ 4Ohm
Voltage - Supply: ±12V ~ 13.5V
Amplifier Type: Class D
Output Type: 2-Channel (Stereo)
Packaging: Box
auf Bestellung 2 Stücke:
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AnzahlPrivatkunde
1+514.95 EUR
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IRS2505LTRPBF irs2505lpbf.pdf?fileId=5546d462533600a40153567ad42c2819
IRS2505LTRPBF
Hersteller: Infineon Technologies
Description: IC PFC CTRLR CRM SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 10.5V ~ 20.8V
Mode: Critical Conduction (CRM)
Supplier Device Package: SOT-23-5
Part Status: Obsolete
Current - Startup: 60 µA
Produkt ist nicht verfügbar
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IRS2538DSPBF Part_Number_Guide_Web.pdf
IRS2538DSPBF
Hersteller: Infineon Technologies
Description: IC PFC/BALLAST CNTRL 85.6KHZ 8SO
Produkt ist nicht verfügbar
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IRS2505LTRPBF irs2505lpbf.pdf?fileId=5546d462533600a40153567ad42c2819
IRS2505LTRPBF
Hersteller: Infineon Technologies
Description: IC PFC CTRLR CRM SOT23-5
Current - Startup: 60 µA
Part Status: Obsolete
Supplier Device Package: SOT-23-5
Mode: Critical Conduction (CRM)
Voltage - Supply: 10.5V ~ 20.8V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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IDP08E65D1XKSA1 IDP08E65D1_1_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30433d6895c8013d68d2c3c80025
IDP08E65D1XKSA1
Hersteller: Infineon Technologies
Description: DIODE STANDARD 650V 8A TO2202
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 80 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar
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IDP15E65D1XKSA1 IDP15E65D1_1_1+%282%29.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30433d68e984013d691402dd0153
IDP15E65D1XKSA1
Hersteller: Infineon Technologies
Description: DIODE STANDARD 650V 15A TO2202
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 15A
Technology: Standard
Reverse Recovery Time (trr): 114 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar
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IDW30E65D1FKSA1 DS_IDW30E65D1_1_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30433d68e984013d6929d1da01cc
IDW30E65D1FKSA1
Hersteller: Infineon Technologies
Description: DIODE GP 650V 60A TO247-3-1
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: PG-TO247-3-1
Current - Average Rectified (Io): 60A
Technology: Standard
Reverse Recovery Time (trr): 115 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
auf Bestellung 259 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.9 EUR
30+3.18 EUR
120+2.57 EUR
Mindestbestellmenge: 4 Stücke
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