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IPD50R2K0CE IPD50R2K0CE Infineon Technologies Part_Number_Guide_Web.pdf Description: N-CHANNEL POWER MOSFET CE
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IPD50R800CE IPD50R800CE Infineon Technologies INFN-S-A0002220638-1.pdf?t.download=true&u=5oefqw Description: IPD50R800 - 500V COOLMOS N-CHANN
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IPD50R500CE IPD50R500CE Infineon Technologies INFN-S-A0001300081-1.pdf?t.download=true&u=5oefqw Description: IPD50R500 - 500V COOLMOS N-CHANN
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 2.3A, 13V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO252-3-344
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 433 pF @ 100 V
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TLE4935LHALA1 TLE4935LHALA1 Infineon Technologies Infineon-TLE49X5L-DataSheet-v01_05-en.pdf?fileId=db3a304316f66ee80117549ac8b206b1 Description: MAGNETIC SWITCH LATCH SSO-3-2
Features: Temperature Compensated
Packaging: Tape & Box (TB)
Package / Case: 3-SSIP, SSO-3-02
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Through Hole
Function: Latch
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3.8V ~ 24V
Technology: Hall Effect
Sensing Range: 20mT Trip, -20mT Release
Current - Output (Max): 100mA
Current - Supply (Max): 8mA
Supplier Device Package: PG-SSO-3-2
Test Condition: 25°C
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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IPD50P03P4L11ATMA2 IPD50P03P4L11ATMA2 Infineon Technologies Infineon-IPD50P03P4L-11-DataSheet-v01_02-EN.pdf?fileId=db3a30431ddc9372011e07ebbe0127e8 Description: MOSFET P-CH 30V 50A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 50A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
Qualification: AEC-Q101
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2500+0.84 EUR
5000+0.79 EUR
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12500+0.73 EUR
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IPD50P03P4L11ATMA2 IPD50P03P4L11ATMA2 Infineon Technologies Infineon-IPD50P03P4L-11-DataSheet-v01_02-EN.pdf?fileId=db3a30431ddc9372011e07ebbe0127e8 Description: MOSFET P-CH 30V 50A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 50A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
Qualification: AEC-Q101
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100+1.32 EUR
500+1.04 EUR
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TLI49655MXTSA1 TLI49655MXTSA1 Infineon Technologies Infineon-TLI4965-5M-DS-v01_00-EN.pdf?fileId=5546d462525dbac4015287edf0c127d3 Description: MAGNETIC SWITCH UNIPOLAR SOT23-3
Qualification: AEC-Q100
Grade: Automotive
Test Condition: 25°C
Supplier Device Package: PG-SOT23-3
Current - Supply (Max): 2.5mA
Current - Output (Max): 5mA
Sensing Range: 10.4mT Trip, 2.8mT Release
Technology: Hall Effect
Voltage - Supply: 3V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Function: Unipolar Switch
Mounting Type: Surface Mount
Polarization: South Pole
Output Type: Open Drain
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
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35+0.61 EUR
38+0.56 EUR
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500+0.45 EUR
1000+0.43 EUR
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IRF5804 IRF5804 Infineon Technologies irf5804.pdf Description: MOSFET P-CH 40V 2.5A MICRO6
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: Micro6™(TSOP-6)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 198mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
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BGM15HA12E6327XTSA1 BGM15HA12E6327XTSA1 Infineon Technologies BGM15HA12.pdf Description: IC AMP LTE 2.3GHZ-2.7GHZ 12ATSLP
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BGM15HA12E6327XTSA1 BGM15HA12E6327XTSA1 Infineon Technologies BGM15HA12.pdf Description: IC AMP LTE 2.3GHZ-2.7GHZ 12ATSLP
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IPD046N08N5ATMA1 IPD046N08N5ATMA1 Infineon Technologies Infineon-IPD046N08N5-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b6137129a66ed Description: MOSFET N-CH 80V 90A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.8V @ 65µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 45A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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2500+1.68 EUR
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IPD046N08N5ATMA1 IPD046N08N5ATMA1 Infineon Technologies Infineon-IPD046N08N5-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b6137129a66ed Description: MOSFET N-CH 80V 90A TO252-3
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 45A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.8V @ 65µA
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100+2.48 EUR
500+2 EUR
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TLE42754EXUMA2 TLE42754EXUMA2 Infineon Technologies Infineon-TLE42754-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc101595f8e99a01fab Description: IC REG LIN 5V 450MA PG-SSOP-14-2
Packaging: Bulk
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 450mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-SSOP-14-2
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
Part Status: Obsolete
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 25 mA
Qualification: AEC-Q100
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BCX69-16E6327 BCX69-16E6327 Infineon Technologies INFNS12739-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89-4-2
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
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BCX6916E6327 BCX6916E6327 Infineon Technologies INFNS12739-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89-4-2
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
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2812+0.23 EUR
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BCX69-25E6327HTSA1 BCX69-25E6327HTSA1 Infineon Technologies INFNS17363-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 20V 1A SOT89
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
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2251+0.27 EUR
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BCX6925H6327XTSA1 BCX6925H6327XTSA1 Infineon Technologies bcx69.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589f3f56603ee&location=.en.product.findProductTypeByName.html_dgdl_bcx69.pdf Description: TRANS PNP 20V 1A PG-SOT89
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
Qualification: AEC-Q101
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960+0.6 EUR
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IAUC100N04S6N015ATMA1 IAUC100N04S6N015ATMA1 Infineon Technologies Infineon-IAUC100N04S6N015-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1ca3da54121e Description: IAUC100N04S6N015ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.55mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 50µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 25 V
Qualification: AEC-Q101
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5000+0.95 EUR
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IAUC100N04S6N015ATMA1 IAUC100N04S6N015ATMA1 Infineon Technologies Infineon-IAUC100N04S6N015-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1ca3da54121e Description: IAUC100N04S6N015ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.55mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 50µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 25 V
Qualification: AEC-Q101
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10+2.31 EUR
50+1.75 EUR
100+1.56 EUR
500+1.24 EUR
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IAUC100N04S6N028ATMA1 IAUC100N04S6N028ATMA1 Infineon Technologies Infineon-IAUC100N04S6N028-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c7f0ef50ff8 Description: IAUC100N04S6N028ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.86mOhm @ 50A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 3V @ 24µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 25 V
Qualification: AEC-Q101
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5000+0.73 EUR
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IAUC100N04S6N028ATMA1 IAUC100N04S6N028ATMA1 Infineon Technologies Infineon-IAUC100N04S6N028-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c7f0ef50ff8 Description: IAUC100N04S6N028ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.86mOhm @ 50A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 3V @ 24µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 25 V
Qualification: AEC-Q101
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12+1.84 EUR
50+1.38 EUR
100+1.23 EUR
500+0.96 EUR
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IAUC100N04S6N022ATMA1 IAUC100N04S6N022ATMA1 Infineon Technologies Infineon-IAUC100N04S6N022-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c3edae10df3 Description: IAUC100N04S6N022ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.26mOhm @ 50A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 3V @ 32µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2421 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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IAUC100N04S6N022ATMA1 IAUC100N04S6N022ATMA1 Infineon Technologies Infineon-IAUC100N04S6N022-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c3edae10df3 Description: IAUC100N04S6N022ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.26mOhm @ 50A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 3V @ 32µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2421 pF @ 25 V
Qualification: AEC-Q101
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7+3.22 EUR
11+2.03 EUR
50+1.54 EUR
100+1.37 EUR
500+1.07 EUR
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IAUC100N04S6L020ATMA1 IAUC100N04S6L020ATMA1 Infineon Technologies Infineon-IAUC100N04S6L020-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c5a4e5b0dfa Description: IAUC100N04S6L020ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.04mOhm @ 50A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2V @ 32µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2744 pF @ 25 V
Qualification: AEC-Q101
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IAUC100N04S6L020ATMA1 IAUC100N04S6L020ATMA1 Infineon Technologies Infineon-IAUC100N04S6L020-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c5a4e5b0dfa Description: IAUC100N04S6L020ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.04mOhm @ 50A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2V @ 32µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2744 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IPB100N04S2-04 IPB100N04S2-04 Infineon Technologies INFNS08599-1.pdf?t.download=true&u=5oefqw Description: IPB100N04 - 20V-40V N-CHANNEL AU
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Bulk
auf Bestellung 499 Stücke:
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IMBG120R140M1HXTMA1 IMBG120R140M1HXTMA1 Infineon Technologies Infineon-IMBG120R140M1H-DataSheet-v02_01-EN.pdf?fileId=5546d462749a7c2d0174b0ecf171326c Description: SICFET N-CH 1200V 18A TO263
Input Capacitance (Ciss) (Max) @ Vds: 491 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +18V, -15V
Part Status: Active
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 2.5mA
Power Dissipation (Max): 107W (Tc)
Rds On (Max) @ Id, Vgs: 189mOhm @ 6A, 18V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
auf Bestellung 310 Stücke:
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FF300R12KT3EHOSA1 FF300R12KT3EHOSA1 Infineon Technologies Infineon-FF300R12KT3_E-DS-v02_00-en_de.pdf?fileId=db3a304313b8b5a60113b981ab7e0010 Description: IGBT MOD 1200V 480A 1450W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 480 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1450 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 21 nF @ 25 V
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SMBT3904E6767 SMBT3904E6767 Infineon Technologies SIEMD096-1763.pdf?t.download=true&u=5oefqw Description: TRANS NPN 40V 0.2A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 330 mW
auf Bestellung 72000 Stücke:
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IPB136N08N3GATMA1 IPB136N08N3GATMA1 Infineon Technologies INFN-S-A0001299567-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 3.5V @ 33µA
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 45A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
auf Bestellung 4000 Stücke:
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CYWB0224ABMX-FDXIT CYWB0224ABMX-FDXIT Infineon Technologies CYWB0224,26ABS,ABM.pdf Description: IC WEST BRIDGE HS-USB 81-WLCSP
auf Bestellung 36000 Stücke:
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IKZA50N65RH5XKSA1 IKZA50N65RH5XKSA1 Infineon Technologies Infineon-IKZA50N65RH5-DataSheet-v02_01-EN.pdf?fileId=5546d46275b79adb0175dc28569031b5 Description: IGBT TRENCH FS 650V 80A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-4-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 21ns/180ns
Switching Energy: 200µJ (on), 180µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 305 W
auf Bestellung 449 Stücke:
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IRF9910TRPBF IRF9910TRPBF Infineon Technologies irf9910pbf.pdf?fileId=5546d462533600a401535611e1a61dcd description Description: MOSFET 2N-CH 20V 10A/12A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 10A, 12A
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Produkt ist nicht verfügbar
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IAUC120N04S6N013ATMA1 IAUC120N04S6N013ATMA1 Infineon Technologies Infineon-IAUC120N04S6N013-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1ca3ea611222 Description: IAUC120N04S6N013ATMA1
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4260 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 3V @ 60µA
Power Dissipation (Max): 115W (Tc)
Rds On (Max) @ Id, Vgs: 1.34mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IAUC120N04S6N013ATMA1 IAUC120N04S6N013ATMA1 Infineon Technologies Infineon-IAUC120N04S6N013-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1ca3ea611222 Description: IAUC120N04S6N013ATMA1
Qualification: AEC-Q101
Grade: Automotive
Rds On (Max) @ Id, Vgs: 1.34mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4260 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 3V @ 60µA
Power Dissipation (Max): 115W (Tc)
auf Bestellung 3966 Stücke:
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50+2.23 EUR
100+2 EUR
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IAUC120N04S6N010ATMA1 IAUC120N04S6N010ATMA1 Infineon Technologies Infineon-IAUC120N04S6N010-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c4c43cb2e1748 Description: MOSFET N-CH 40V 150A TDSON-8-34
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.03mOhm @ 60A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3V @ 90µA
Supplier Device Package: PG-TDSON-8-34
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6878 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9965 Stücke:
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4+5.26 EUR
10+3.39 EUR
50+2.59 EUR
100+2.33 EUR
500+1.87 EUR
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IAUC120N04S6L009ATMA1 IAUC120N04S6L009ATMA1 Infineon Technologies Infineon-IAUC120N04S6L009-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c4c4d087c177b Description: MOSFET N-CH 40V 150A TDSON-8-34
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 960mOhm @ 60A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 90µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7806 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Qualification: AEC-Q101
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4+5.57 EUR
10+3.59 EUR
50+2.75 EUR
100+2.46 EUR
500+1.99 EUR
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IAUC120N04S6N006ATMA1 IAUC120N04S6N006ATMA1 Infineon Technologies Infineon-IAUC120N04S6N006-DataSheet-v01_00-EN.pdf?fileId=5546d46275b79adb0175e120b4b310b3 Description: MOSFET N-CH 40V 120A 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 0.6mOhm @ 60A, 10V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 3V @ 130µA
Supplier Device Package: PG-TDSON-8-53
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10117 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUC120N04S6N006ATMA1 IAUC120N04S6N006ATMA1 Infineon Technologies Infineon-IAUC120N04S6N006-DataSheet-v01_00-EN.pdf?fileId=5546d46275b79adb0175e120b4b310b3 Description: MOSFET N-CH 40V 120A 8TDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 0.6mOhm @ 60A, 10V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 3V @ 130µA
Supplier Device Package: PG-TDSON-8-53
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10117 pF @ 25 V
Qualification: AEC-Q101
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3+7.38 EUR
10+4.82 EUR
50+3.72 EUR
100+3.37 EUR
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IAUC120N04S6L005ATMA1 IAUC120N04S6L005ATMA1 Infineon Technologies Infineon-IAUC120N04S6L005-DataSheet-v01_00-EN.pdf?fileId=5546d46275b79adb0175e129ada610b6 Description: MOSFET N-CH 40V 120A 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 0.55mOhm @ 60A, 10V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: PG-TDSON-8-53
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11203 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 40000 Stücke:
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5000+2.3 EUR
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IAUC120N04S6L005ATMA1 IAUC120N04S6L005ATMA1 Infineon Technologies Infineon-IAUC120N04S6L005-DataSheet-v01_00-EN.pdf?fileId=5546d46275b79adb0175e129ada610b6 Description: MOSFET N-CH 40V 120A 8TDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 0.55mOhm @ 60A, 10V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: PG-TDSON-8-53
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11203 pF @ 25 V
Qualification: AEC-Q101
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3+7.52 EUR
10+4.93 EUR
50+3.8 EUR
100+3.44 EUR
500+2.65 EUR
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BSS7728NH6327 BSS7728NH6327 Infineon Technologies INFNS19406-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 26µA
Supplier Device Package: PG-SOT23-3-5
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 25 V
Produkt ist nicht verfügbar
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IPD082N10N3GBTMA1 IPD082N10N3GBTMA1 Infineon Technologies IPP086N10N3+G_Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431ce5fb52011d1ac5c8fa1358 Description: MOSFET N-CH 100V 80A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 73A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 75µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 50 V
Produkt ist nicht verfügbar
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SAB82538H-10V3.1A Infineon Technologies Description: SAB82538 - HSCX HIGH-LEVEL SERI
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PEB20560V3.1 Infineon Technologies Description: PEB20560 - TIME SLOT ASSIGNER
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TLE8888QKXUMA1 TLE8888QKXUMA1 Infineon Technologies Infineon-TLE8888QK-DS-v01_00-EN.pdf?fileId=5546d4624f205c9a014f402ebd1c6095 Description: IC PWR MGMT AUTOMOTIVE 100-LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4V ~ 28V
Supplier Device Package: PG-LQFP-100-12
Grade: Automotive
Part Status: Active
auf Bestellung 4000 Stücke:
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1000+22.93 EUR
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TLE8888QKXUMA1 TLE8888QKXUMA1 Infineon Technologies Infineon-TLE8888QK-DS-v01_00-EN.pdf?fileId=5546d4624f205c9a014f402ebd1c6095 Description: IC PWR MGMT AUTOMOTIVE 100-LQFP
Packaging: Cut Tape (CT)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4V ~ 28V
Supplier Device Package: PG-LQFP-100-12
Grade: Automotive
Part Status: Active
auf Bestellung 5395 Stücke:
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S25FL256LAGNFI010 S25FL256LAGNFI010 Infineon Technologies INFN-S-A0017271261-1.pdf Description: IC FLASH 256MBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Part Status: Active
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
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10+5.91 EUR
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50+5.62 EUR
100+5.49 EUR
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XC164CS32F40FBBAKXQM XC164CS32F40FBBAKXQM Infineon Technologies INFNS10154-1.pdf?t.download=true&u=5oefqw Description: LEGACY 16-BIT FLASH MCU
Number of I/O: 79
Part Status: Active
Supplier Device Package: PG-TQFP-100-5
Peripherals: PWM, WDT
Connectivity: CANbus, EBI/EMI, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Core Size: 16-Bit
Data Converters: A/D 14x8/10b SAR
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 12K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Bulk
DigiKey Programmable: Not Verified
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XC164CS32F40FBBAKXUMA1 Infineon Technologies XC164CS-32F_32R_V1.1_Aug2006.pdf Description: IC MCU 16BIT 256KB FLASH 100TQFP
DigiKey Programmable: Not Verified
Number of I/O: 79
Supplier Device Package: PG-TQFP-100-5
Peripherals: PWM, WDT
Connectivity: CANbus, EBI/EMI, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Core Size: 16-Bit
Data Converters: A/D 14x8/10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 12K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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XC164CS32F40FBBAKXUMA1 Infineon Technologies XC164CS-32F_32R_V1.1_Aug2006.pdf Description: IC MCU 16BIT 256KB FLASH 100TQFP
DigiKey Programmable: Not Verified
Number of I/O: 79
Supplier Device Package: PG-TQFP-100-5
Peripherals: PWM, WDT
Connectivity: CANbus, EBI/EMI, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Core Size: 16-Bit
Data Converters: A/D 14x8/10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 12K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Cut Tape (CT)
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SAK-XC164CS-32F40F SAK-XC164CS-32F40F Infineon Technologies INFNS10154-1.pdf?t.download=true&u=5oefqw Description: LEGACY 16-BIT FLASH MICROCONTROL
DigiKey Programmable: Not Verified
Number of I/O: 79
Part Status: Active
Supplier Device Package: PG-TQFP-100-5
Peripherals: PWM, WDT
Connectivity: CANbus, EBI/EMI, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Core Size: 16-Bit
Data Converters: A/D 14x8/10b SAR
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 12K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Bulk
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XC161CS32F20FBBFXUMA2 Infineon Technologies Description: LEGACY 16-BIT FLASH MCU
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KX164CS32F40FBBAXP KX164CS32F40FBBAXP Infineon Technologies Description: LEGACY 16-BIT MCU
auf Bestellung 33 Stücke:
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KX161CS32F40FBBANT KX161CS32F40FBBANT Infineon Technologies Infineon-XC161_32-DS-v01_02-en.pdf?fileId=5546d4624933b8750149880e0c287e3a Description: IC MCU 16BIT 256KB FLASH 144TQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 12K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 12x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Connectivity: CANbus, EBI/EMI, I2C, SPI, UART/USART
Peripherals: PWM, WDT
Supplier Device Package: PG-TQFP-144-7
Number of I/O: 99
DigiKey Programmable: Not Verified
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KX164CS32F40FBBANT KX164CS32F40FBBANT Infineon Technologies Infineon-XC164CS_32-DS-v01_01-en.pdf?folderId=5546d4694909da4801490a0a451108b0&fileId=db3a3043136c9a8b01136d9c9f930069&ack=t Description: IC MCU 16BIT 256KB FLASH 100TQFP
Number of I/O: 79
Part Status: Discontinued at Digi-Key
Supplier Device Package: PG-TQFP-100-5
Peripherals: PWM, WDT
Connectivity: CANbus, EBI/EMI, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Core Size: 16-Bit
Data Converters: A/D 14x8/10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 12K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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KX164CS32F40FBBANT KX164CS32F40FBBANT Infineon Technologies Infineon-XC164CS_32-DS-v01_01-en.pdf?folderId=5546d4694909da4801490a0a451108b0&fileId=db3a3043136c9a8b01136d9c9f930069&ack=t Description: IC MCU 16BIT 256KB FLASH 100TQFP
Number of I/O: 79
Part Status: Discontinued at Digi-Key
Supplier Device Package: PG-TQFP-100-5
Peripherals: PWM, WDT
Connectivity: CANbus, EBI/EMI, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Core Size: 16-Bit
Data Converters: A/D 14x8/10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 12K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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SAF-XC161CS-32F20F BB-A SAF-XC161CS-32F20F BB-A Infineon Technologies Infineon-XC161_32-DS-v01_02-en.pdf?fileId=5546d4624933b8750149880e0c287e3a Description: IC MCU 16BIT 256KB FLASH 144TQFP
DigiKey Programmable: Not Verified
Number of I/O: 99
Part Status: Obsolete
Supplier Device Package: PG-TQFP-144-7
Peripherals: PWM, WDT
Connectivity: CANbus, EBI/EMI, I²C, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Core Size: 16-Bit
Data Converters: A/D 12x8/10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 12K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 20MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FX161CS32F40FBBANT FX161CS32F40FBBANT Infineon Technologies Infineon-XC161_32-DS-v01_02-en.pdf?fileId=5546d4624933b8750149880e0c287e3a Description: IC MCU 16BIT 256KB FLASH 144TQFP
Produkt ist nicht verfügbar
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BSO615CGXUMA1 BSO615CGXUMA1 Infineon Technologies Infineon-BSO615CG-DS-v02_01-en.pdf?fileId=db3a304412b407950112b435049f6230 Description: MOSFET N/P-CH 60V 3.1A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), 2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V, 460pF @ 25V
Rds On (Max) @ Id, Vgs: 110mOhm @ 3.1A, 10V, 300mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V, 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 20µA, 2V @ 450µA
Supplier Device Package: PG-DSO-8
Part Status: Last Time Buy
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IPD50R2K0CE Part_Number_Guide_Web.pdf
IPD50R2K0CE
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET CE
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IPD50R800CE INFN-S-A0002220638-1.pdf?t.download=true&u=5oefqw
IPD50R800CE
Hersteller: Infineon Technologies
Description: IPD50R800 - 500V COOLMOS N-CHANN
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IPD50R500CE INFN-S-A0001300081-1.pdf?t.download=true&u=5oefqw
IPD50R500CE
Hersteller: Infineon Technologies
Description: IPD50R500 - 500V COOLMOS N-CHANN
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 2.3A, 13V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO252-3-344
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 433 pF @ 100 V
auf Bestellung 116541 Stücke:
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AnzahlPrivatkunde
792+0.75 EUR
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TLE4935LHALA1 Infineon-TLE49X5L-DataSheet-v01_05-en.pdf?fileId=db3a304316f66ee80117549ac8b206b1
TLE4935LHALA1
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH LATCH SSO-3-2
Features: Temperature Compensated
Packaging: Tape & Box (TB)
Package / Case: 3-SSIP, SSO-3-02
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Through Hole
Function: Latch
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3.8V ~ 24V
Technology: Hall Effect
Sensing Range: 20mT Trip, -20mT Release
Current - Output (Max): 100mA
Current - Supply (Max): 8mA
Supplier Device Package: PG-SSO-3-2
Test Condition: 25°C
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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IPD50P03P4L11ATMA2 Infineon-IPD50P03P4L-11-DataSheet-v01_02-EN.pdf?fileId=db3a30431ddc9372011e07ebbe0127e8
IPD50P03P4L11ATMA2
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 50A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 50A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
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AnzahlPrivatkunde
2500+0.84 EUR
5000+0.79 EUR
7500+0.76 EUR
12500+0.73 EUR
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IPD50P03P4L11ATMA2 Infineon-IPD50P03P4L-11-DataSheet-v01_02-EN.pdf?fileId=db3a30431ddc9372011e07ebbe0127e8
IPD50P03P4L11ATMA2
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 50A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 50A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 17847 Stücke:
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AnzahlPrivatkunde
7+3.12 EUR
11+1.98 EUR
100+1.32 EUR
500+1.04 EUR
1000+0.95 EUR
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TLI49655MXTSA1 Infineon-TLI4965-5M-DS-v01_00-EN.pdf?fileId=5546d462525dbac4015287edf0c127d3
TLI49655MXTSA1
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH UNIPOLAR SOT23-3
Qualification: AEC-Q100
Grade: Automotive
Test Condition: 25°C
Supplier Device Package: PG-SOT23-3
Current - Supply (Max): 2.5mA
Current - Output (Max): 5mA
Sensing Range: 10.4mT Trip, 2.8mT Release
Technology: Hall Effect
Voltage - Supply: 3V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Function: Unipolar Switch
Mounting Type: Surface Mount
Polarization: South Pole
Output Type: Open Drain
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
auf Bestellung 2520 Stücke:
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AnzahlPrivatkunde
29+0.74 EUR
33+0.64 EUR
35+0.61 EUR
38+0.56 EUR
50+0.52 EUR
100+0.5 EUR
500+0.45 EUR
1000+0.43 EUR
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IRF5804 irf5804.pdf
IRF5804
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 2.5A MICRO6
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: Micro6™(TSOP-6)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 198mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Produkt ist nicht verfügbar
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BGM15HA12E6327XTSA1 BGM15HA12.pdf
BGM15HA12E6327XTSA1
Hersteller: Infineon Technologies
Description: IC AMP LTE 2.3GHZ-2.7GHZ 12ATSLP
Produkt ist nicht verfügbar
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BGM15HA12E6327XTSA1 BGM15HA12.pdf
BGM15HA12E6327XTSA1
Hersteller: Infineon Technologies
Description: IC AMP LTE 2.3GHZ-2.7GHZ 12ATSLP
Produkt ist nicht verfügbar
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IPD046N08N5ATMA1 Infineon-IPD046N08N5-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b6137129a66ed
IPD046N08N5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 90A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.8V @ 65µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 45A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.68 EUR
Mindestbestellmenge: 2500 Stücke
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IPD046N08N5ATMA1 Infineon-IPD046N08N5-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b6137129a66ed
IPD046N08N5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 90A TO252-3
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 45A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.8V @ 65µA
auf Bestellung 7418 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.55 EUR
10+3.58 EUR
50+2.74 EUR
100+2.48 EUR
500+2 EUR
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TLE42754EXUMA2 Infineon-TLE42754-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc101595f8e99a01fab
TLE42754EXUMA2
Hersteller: Infineon Technologies
Description: IC REG LIN 5V 450MA PG-SSOP-14-2
Packaging: Bulk
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 450mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-SSOP-14-2
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
Part Status: Obsolete
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 25 mA
Qualification: AEC-Q100
auf Bestellung 21424 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
205+2.68 EUR
Mindestbestellmenge: 205 Stücke
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BCX69-16E6327 INFNS12739-1.pdf?t.download=true&u=5oefqw
BCX69-16E6327
Hersteller: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89-4-2
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCX6916E6327 INFNS12739-1.pdf?t.download=true&u=5oefqw
BCX6916E6327
Hersteller: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89-4-2
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2812+0.23 EUR
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BCX69-25E6327HTSA1 INFNS17363-1.pdf?t.download=true&u=5oefqw
BCX69-25E6327HTSA1
Hersteller: Infineon Technologies
Description: TRANS PNP 20V 1A SOT89
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2251+0.27 EUR
Mindestbestellmenge: 2251 Stücke
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BCX6925H6327XTSA1 bcx69.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589f3f56603ee&location=.en.product.findProductTypeByName.html_dgdl_bcx69.pdf
BCX6925H6327XTSA1
Hersteller: Infineon Technologies
Description: TRANS PNP 20V 1A PG-SOT89
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
Qualification: AEC-Q101
auf Bestellung 76000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
960+0.6 EUR
Mindestbestellmenge: 960 Stücke
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IAUC100N04S6N015ATMA1 Infineon-IAUC100N04S6N015-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1ca3da54121e
IAUC100N04S6N015ATMA1
Hersteller: Infineon Technologies
Description: IAUC100N04S6N015ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.55mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 50µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.95 EUR
Mindestbestellmenge: 5000 Stücke
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IAUC100N04S6N015ATMA1 Infineon-IAUC100N04S6N015-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1ca3da54121e
IAUC100N04S6N015ATMA1
Hersteller: Infineon Technologies
Description: IAUC100N04S6N015ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.55mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 50µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 9563 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.64 EUR
10+2.31 EUR
50+1.75 EUR
100+1.56 EUR
500+1.24 EUR
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IAUC100N04S6N028ATMA1 Infineon-IAUC100N04S6N028-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c7f0ef50ff8
IAUC100N04S6N028ATMA1
Hersteller: Infineon Technologies
Description: IAUC100N04S6N028ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.86mOhm @ 50A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 3V @ 24µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.73 EUR
Mindestbestellmenge: 5000 Stücke
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IAUC100N04S6N028ATMA1 Infineon-IAUC100N04S6N028-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c7f0ef50ff8
IAUC100N04S6N028ATMA1
Hersteller: Infineon Technologies
Description: IAUC100N04S6N028ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.86mOhm @ 50A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 3V @ 24µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 8247 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.92 EUR
12+1.84 EUR
50+1.38 EUR
100+1.23 EUR
500+0.96 EUR
Mindestbestellmenge: 8 Stücke
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IAUC100N04S6N022ATMA1 Infineon-IAUC100N04S6N022-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c3edae10df3
IAUC100N04S6N022ATMA1
Hersteller: Infineon Technologies
Description: IAUC100N04S6N022ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.26mOhm @ 50A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 3V @ 32µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2421 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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IAUC100N04S6N022ATMA1 Infineon-IAUC100N04S6N022-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c3edae10df3
IAUC100N04S6N022ATMA1
Hersteller: Infineon Technologies
Description: IAUC100N04S6N022ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.26mOhm @ 50A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 3V @ 32µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2421 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2950 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.22 EUR
11+2.03 EUR
50+1.54 EUR
100+1.37 EUR
500+1.07 EUR
Mindestbestellmenge: 7 Stücke
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IAUC100N04S6L020ATMA1 Infineon-IAUC100N04S6L020-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c5a4e5b0dfa
IAUC100N04S6L020ATMA1
Hersteller: Infineon Technologies
Description: IAUC100N04S6L020ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.04mOhm @ 50A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2V @ 32µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2744 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.82 EUR
Mindestbestellmenge: 5000 Stücke
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IAUC100N04S6L020ATMA1 Infineon-IAUC100N04S6L020-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c5a4e5b0dfa
IAUC100N04S6L020ATMA1
Hersteller: Infineon Technologies
Description: IAUC100N04S6L020ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.04mOhm @ 50A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2V @ 32µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2744 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10246 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.22 EUR
11+2.03 EUR
50+1.54 EUR
100+1.37 EUR
500+1.07 EUR
Mindestbestellmenge: 7 Stücke
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IPB100N04S2-04 INFNS08599-1.pdf?t.download=true&u=5oefqw
IPB100N04S2-04
Hersteller: Infineon Technologies
Description: IPB100N04 - 20V-40V N-CHANNEL AU
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Bulk
auf Bestellung 499 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
132+4.53 EUR
Mindestbestellmenge: 132 Stücke
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IMBG120R140M1HXTMA1 Infineon-IMBG120R140M1H-DataSheet-v02_01-EN.pdf?fileId=5546d462749a7c2d0174b0ecf171326c
IMBG120R140M1HXTMA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 1200V 18A TO263
Input Capacitance (Ciss) (Max) @ Vds: 491 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +18V, -15V
Part Status: Active
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 2.5mA
Power Dissipation (Max): 107W (Tc)
Rds On (Max) @ Id, Vgs: 189mOhm @ 6A, 18V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
auf Bestellung 310 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+13.66 EUR
10+9.22 EUR
100+6.71 EUR
Mindestbestellmenge: 2 Stücke
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FF300R12KT3EHOSA1 Infineon-FF300R12KT3_E-DS-v02_00-en_de.pdf?fileId=db3a304313b8b5a60113b981ab7e0010
FF300R12KT3EHOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 480A 1450W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 480 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1450 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 21 nF @ 25 V
auf Bestellung 130 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+302.77 EUR
Mindestbestellmenge: 2 Stücke
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SMBT3904E6767 SIEMD096-1763.pdf?t.download=true&u=5oefqw
SMBT3904E6767
Hersteller: Infineon Technologies
Description: TRANS NPN 40V 0.2A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 330 mW
auf Bestellung 72000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8955+0.055 EUR
Mindestbestellmenge: 8955 Stücke
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IPB136N08N3GATMA1 INFN-S-A0001299567-1.pdf?t.download=true&u=5oefqw
IPB136N08N3GATMA1
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 3.5V @ 33µA
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 45A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
417+1.32 EUR
Mindestbestellmenge: 417 Stücke
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CYWB0224ABMX-FDXIT CYWB0224,26ABS,ABM.pdf
CYWB0224ABMX-FDXIT
Hersteller: Infineon Technologies
Description: IC WEST BRIDGE HS-USB 81-WLCSP
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
23+26.31 EUR
Mindestbestellmenge: 23 Stücke
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IKZA50N65RH5XKSA1 Infineon-IKZA50N65RH5-DataSheet-v02_01-EN.pdf?fileId=5546d46275b79adb0175dc28569031b5
IKZA50N65RH5XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 80A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-4-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 21ns/180ns
Switching Energy: 200µJ (on), 180µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 305 W
auf Bestellung 449 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+14.97 EUR
30+8.68 EUR
120+7.28 EUR
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IRF9910TRPBF description irf9910pbf.pdf?fileId=5546d462533600a401535611e1a61dcd
IRF9910TRPBF
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 20V 10A/12A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 10A, 12A
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Produkt ist nicht verfügbar
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IAUC120N04S6N013ATMA1 Infineon-IAUC120N04S6N013-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1ca3ea611222
IAUC120N04S6N013ATMA1
Hersteller: Infineon Technologies
Description: IAUC120N04S6N013ATMA1
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4260 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 3V @ 60µA
Power Dissipation (Max): 115W (Tc)
Rds On (Max) @ Id, Vgs: 1.34mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IAUC120N04S6N013ATMA1 Infineon-IAUC120N04S6N013-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1ca3ea611222
IAUC120N04S6N013ATMA1
Hersteller: Infineon Technologies
Description: IAUC120N04S6N013ATMA1
Qualification: AEC-Q101
Grade: Automotive
Rds On (Max) @ Id, Vgs: 1.34mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4260 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 3V @ 60µA
Power Dissipation (Max): 115W (Tc)
auf Bestellung 3966 Stücke:
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10+2.94 EUR
50+2.23 EUR
100+2 EUR
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IAUC120N04S6N010ATMA1 Infineon-IAUC120N04S6N010-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c4c43cb2e1748
IAUC120N04S6N010ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 150A TDSON-8-34
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.03mOhm @ 60A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3V @ 90µA
Supplier Device Package: PG-TDSON-8-34
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6878 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9965 Stücke:
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AnzahlPrivatkunde
4+5.26 EUR
10+3.39 EUR
50+2.59 EUR
100+2.33 EUR
500+1.87 EUR
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IAUC120N04S6L009ATMA1 Infineon-IAUC120N04S6L009-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c4c4d087c177b
IAUC120N04S6L009ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 150A TDSON-8-34
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 960mOhm @ 60A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 90µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7806 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Qualification: AEC-Q101
auf Bestellung 29697 Stücke:
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4+5.57 EUR
10+3.59 EUR
50+2.75 EUR
100+2.46 EUR
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IAUC120N04S6N006ATMA1 Infineon-IAUC120N04S6N006-DataSheet-v01_00-EN.pdf?fileId=5546d46275b79adb0175e120b4b310b3
IAUC120N04S6N006ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 120A 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 0.6mOhm @ 60A, 10V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 3V @ 130µA
Supplier Device Package: PG-TDSON-8-53
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10117 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUC120N04S6N006ATMA1 Infineon-IAUC120N04S6N006-DataSheet-v01_00-EN.pdf?fileId=5546d46275b79adb0175e120b4b310b3
IAUC120N04S6N006ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 120A 8TDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 0.6mOhm @ 60A, 10V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 3V @ 130µA
Supplier Device Package: PG-TDSON-8-53
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10117 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 4014 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.38 EUR
10+4.82 EUR
50+3.72 EUR
100+3.37 EUR
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IAUC120N04S6L005ATMA1 Infineon-IAUC120N04S6L005-DataSheet-v01_00-EN.pdf?fileId=5546d46275b79adb0175e129ada610b6
IAUC120N04S6L005ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 120A 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 0.55mOhm @ 60A, 10V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: PG-TDSON-8-53
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11203 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+2.3 EUR
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IAUC120N04S6L005ATMA1 Infineon-IAUC120N04S6L005-DataSheet-v01_00-EN.pdf?fileId=5546d46275b79adb0175e129ada610b6
IAUC120N04S6L005ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 120A 8TDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 0.55mOhm @ 60A, 10V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: PG-TDSON-8-53
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11203 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 41305 Stücke:
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AnzahlPrivatkunde
3+7.52 EUR
10+4.93 EUR
50+3.8 EUR
100+3.44 EUR
500+2.65 EUR
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BSS7728NH6327 INFNS19406-1.pdf?t.download=true&u=5oefqw
BSS7728NH6327
Hersteller: Infineon Technologies
Description: SMALL SIGNAL N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 26µA
Supplier Device Package: PG-SOT23-3-5
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 25 V
Produkt ist nicht verfügbar
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IPD082N10N3GBTMA1 IPP086N10N3+G_Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431ce5fb52011d1ac5c8fa1358
IPD082N10N3GBTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 80A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 73A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 75µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 50 V
Produkt ist nicht verfügbar
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SAB82538H-10V3.1A
Hersteller: Infineon Technologies
Description: SAB82538 - HSCX HIGH-LEVEL SERI
Produkt ist nicht verfügbar
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PEB20560V3.1
Hersteller: Infineon Technologies
Description: PEB20560 - TIME SLOT ASSIGNER
Produkt ist nicht verfügbar
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TLE8888QKXUMA1 Infineon-TLE8888QK-DS-v01_00-EN.pdf?fileId=5546d4624f205c9a014f402ebd1c6095
TLE8888QKXUMA1
Hersteller: Infineon Technologies
Description: IC PWR MGMT AUTOMOTIVE 100-LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4V ~ 28V
Supplier Device Package: PG-LQFP-100-12
Grade: Automotive
Part Status: Active
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+22.93 EUR
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TLE8888QKXUMA1 Infineon-TLE8888QK-DS-v01_00-EN.pdf?fileId=5546d4624f205c9a014f402ebd1c6095
TLE8888QKXUMA1
Hersteller: Infineon Technologies
Description: IC PWR MGMT AUTOMOTIVE 100-LQFP
Packaging: Cut Tape (CT)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4V ~ 28V
Supplier Device Package: PG-LQFP-100-12
Grade: Automotive
Part Status: Active
auf Bestellung 5395 Stücke:
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1+36.13 EUR
10+28.8 EUR
25+26.97 EUR
100+25.23 EUR
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S25FL256LAGNFI010 INFN-S-A0017271261-1.pdf
S25FL256LAGNFI010
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Part Status: Active
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
auf Bestellung 223 Stücke:
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AnzahlPrivatkunde
4+6.34 EUR
10+5.91 EUR
25+5.75 EUR
50+5.62 EUR
100+5.49 EUR
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XC164CS32F40FBBAKXQM INFNS10154-1.pdf?t.download=true&u=5oefqw
XC164CS32F40FBBAKXQM
Hersteller: Infineon Technologies
Description: LEGACY 16-BIT FLASH MCU
Number of I/O: 79
Part Status: Active
Supplier Device Package: PG-TQFP-100-5
Peripherals: PWM, WDT
Connectivity: CANbus, EBI/EMI, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Core Size: 16-Bit
Data Converters: A/D 14x8/10b SAR
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 12K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Bulk
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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XC164CS32F40FBBAKXUMA1 XC164CS-32F_32R_V1.1_Aug2006.pdf
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 256KB FLASH 100TQFP
DigiKey Programmable: Not Verified
Number of I/O: 79
Supplier Device Package: PG-TQFP-100-5
Peripherals: PWM, WDT
Connectivity: CANbus, EBI/EMI, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Core Size: 16-Bit
Data Converters: A/D 14x8/10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 12K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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XC164CS32F40FBBAKXUMA1 XC164CS-32F_32R_V1.1_Aug2006.pdf
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 256KB FLASH 100TQFP
DigiKey Programmable: Not Verified
Number of I/O: 79
Supplier Device Package: PG-TQFP-100-5
Peripherals: PWM, WDT
Connectivity: CANbus, EBI/EMI, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Core Size: 16-Bit
Data Converters: A/D 14x8/10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 12K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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SAK-XC164CS-32F40F INFNS10154-1.pdf?t.download=true&u=5oefqw
SAK-XC164CS-32F40F
Hersteller: Infineon Technologies
Description: LEGACY 16-BIT FLASH MICROCONTROL
DigiKey Programmable: Not Verified
Number of I/O: 79
Part Status: Active
Supplier Device Package: PG-TQFP-100-5
Peripherals: PWM, WDT
Connectivity: CANbus, EBI/EMI, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Core Size: 16-Bit
Data Converters: A/D 14x8/10b SAR
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 12K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Bulk
Produkt ist nicht verfügbar
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XC161CS32F20FBBFXUMA2
Hersteller: Infineon Technologies
Description: LEGACY 16-BIT FLASH MCU
Produkt ist nicht verfügbar
Mindestbestellmenge: 37 Stücke
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KX164CS32F40FBBAXP
KX164CS32F40FBBAXP
Hersteller: Infineon Technologies
Description: LEGACY 16-BIT MCU
auf Bestellung 33 Stücke:
Lieferzeit 10-14 Tag (e)
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KX161CS32F40FBBANT Infineon-XC161_32-DS-v01_02-en.pdf?fileId=5546d4624933b8750149880e0c287e3a
KX161CS32F40FBBANT
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 256KB FLASH 144TQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 12K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 12x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Connectivity: CANbus, EBI/EMI, I2C, SPI, UART/USART
Peripherals: PWM, WDT
Supplier Device Package: PG-TQFP-144-7
Number of I/O: 99
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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KX164CS32F40FBBANT Infineon-XC164CS_32-DS-v01_01-en.pdf?folderId=5546d4694909da4801490a0a451108b0&fileId=db3a3043136c9a8b01136d9c9f930069&ack=t
KX164CS32F40FBBANT
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 256KB FLASH 100TQFP
Number of I/O: 79
Part Status: Discontinued at Digi-Key
Supplier Device Package: PG-TQFP-100-5
Peripherals: PWM, WDT
Connectivity: CANbus, EBI/EMI, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Core Size: 16-Bit
Data Converters: A/D 14x8/10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 12K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tape & Reel (TR)
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KX164CS32F40FBBANT Infineon-XC164CS_32-DS-v01_01-en.pdf?folderId=5546d4694909da4801490a0a451108b0&fileId=db3a3043136c9a8b01136d9c9f930069&ack=t
KX164CS32F40FBBANT
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 256KB FLASH 100TQFP
Number of I/O: 79
Part Status: Discontinued at Digi-Key
Supplier Device Package: PG-TQFP-100-5
Peripherals: PWM, WDT
Connectivity: CANbus, EBI/EMI, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Core Size: 16-Bit
Data Converters: A/D 14x8/10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 12K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Cut Tape (CT)
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SAF-XC161CS-32F20F BB-A Infineon-XC161_32-DS-v01_02-en.pdf?fileId=5546d4624933b8750149880e0c287e3a
SAF-XC161CS-32F20F BB-A
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 256KB FLASH 144TQFP
DigiKey Programmable: Not Verified
Number of I/O: 99
Part Status: Obsolete
Supplier Device Package: PG-TQFP-144-7
Peripherals: PWM, WDT
Connectivity: CANbus, EBI/EMI, I²C, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Core Size: 16-Bit
Data Converters: A/D 12x8/10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 12K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 20MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP
Packaging: Tape & Reel (TR)
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FX161CS32F40FBBANT Infineon-XC161_32-DS-v01_02-en.pdf?fileId=5546d4624933b8750149880e0c287e3a
FX161CS32F40FBBANT
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 256KB FLASH 144TQFP
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BSO615CGXUMA1 Infineon-BSO615CG-DS-v02_01-en.pdf?fileId=db3a304412b407950112b435049f6230
BSO615CGXUMA1
Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 60V 3.1A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), 2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V, 460pF @ 25V
Rds On (Max) @ Id, Vgs: 110mOhm @ 3.1A, 10V, 300mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V, 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 20µA, 2V @ 450µA
Supplier Device Package: PG-DSO-8
Part Status: Last Time Buy
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