Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (148911) > Seite 400 nach 2482

Wählen Sie Seite:   [  << Vorherige Seite ]  1 248 395 396 397 398 399 400 401 402 403 404 405 496 744 992 1240 1488 1736 1984 2232 2480 2482  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IRFR9N20DTRLPBF IRFR9N20DTRLPBF Infineon Technologies irfr9n20dpbf.pdf?fileId=5546d462533600a40153563610b1213b Description: MOSFET N-CH 200V 9.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.6A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TC333LP32F200FAALXUMA1 TC333LP32F200FAALXUMA1 Infineon Technologies Infineon-TriCore_Family_BR-ProductBrochure-v01_00-EN.pdf?fileId=5546d4625d5945ed015dc81f47b436c7 Description: IC MCU 32BIT 2MB FLASH 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 248K x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: DMA, I2S, PWM, WDT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-TQFP-100-23
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2EDS8265HXUMA2 2EDS8265HXUMA2 Infineon Technologies Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057 Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-30
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 350 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.40 EUR
10+4.07 EUR
25+3.73 EUR
100+3.37 EUR
250+3.19 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IPL60R065C7AUMA1 IPL60R065C7AUMA1 Infineon Technologies Infineon-IPL60R065C7-DS-v02_00-EN.pdf?fileId=5546d462518ffd850151b090ab7b75cd Description: MOSFET HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 15.9A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: PG-VSON-4-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 400 V
auf Bestellung 5100 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.65 EUR
10+7.55 EUR
100+5.72 EUR
500+5.51 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IRF6811STR1PBF Infineon Technologies irf6811spbf.pdf?fileId=5546d462533600a4015355f0b3661ab6 Description: MOSFET N CH 25V 19A DIRECTFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IGD15N65T6ARMA1 IGD15N65T6ARMA1 Infineon Technologies Infineon-IGD15N65T6-DataSheet-v02_03-EN.pdf?fileId=5546d462766a0c1701766c35b2760de1 Description: IGBT TRENCH FS 650V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 11.5A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/117ns
Switching Energy: 230µJ (on), 110µJ (off)
Test Condition: 400V, 11.5A, 47Ohm, 15V
Gate Charge: 37 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 57.5 A
Power - Max: 100 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IGD15N65T6ARMA1 IGD15N65T6ARMA1 Infineon Technologies Infineon-IGD15N65T6-DataSheet-v02_03-EN.pdf?fileId=5546d462766a0c1701766c35b2760de1 Description: IGBT TRENCH FS 650V 30A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 11.5A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/117ns
Switching Energy: 230µJ (on), 110µJ (off)
Test Condition: 400V, 11.5A, 47Ohm, 15V
Gate Charge: 37 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 57.5 A
Power - Max: 100 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AIGB15N65H5ATMA1 AIGB15N65H5ATMA1 Infineon Technologies Infineon-AIGB15N65H5-DataSheet-v02_01-EN.pdf?fileId=5546d462749a7c2d0174b6669e363172 Description: IGBT NPT 650V 30A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Td (on/off) @ 25°C: 24ns/22ns
Switching Energy: 160µJ (on), 40µJ (off)
Test Condition: 400V, 7.5A, 39Ohm, 15V
Gate Charge: 40 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 105 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 958 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.21 EUR
10+4.08 EUR
100+2.87 EUR
500+2.57 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
AIKB15N65DH5ATMA1 AIKB15N65DH5ATMA1 Infineon Technologies Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4 Description: IGBT NPT 650V 15A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 650 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.36 EUR
10+4.87 EUR
100+3.46 EUR
500+3.24 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
AIKB15N65DF5ATMA1 AIKB15N65DF5ATMA1 Infineon Technologies Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4 Description: IGBT NPT 650V 15A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 650 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.36 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
PEF2260NV3.0SICOFI Infineon Technologies Description: SICOFI CODEC FILTER
auf Bestellung 90 Stücke:
Lieferzeit 10-14 Tag (e)
20+27.53 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
2EDF7175FXUMA2 2EDF7175FXUMA2 Infineon Technologies Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057 Description: IC GATE DRVR HALF-BRIDG DSO16
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-11
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 1A, 2A
DigiKey Programmable: Not Verified
auf Bestellung 8431 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.33 EUR
10+3.22 EUR
25+2.94 EUR
100+2.64 EUR
250+2.49 EUR
500+2.41 EUR
1000+2.34 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
2EDS8165HXUMA2 2EDS8165HXUMA2 Infineon Technologies Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057 Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-30
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 1A, 2A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 700 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.66 EUR
10+2.71 EUR
25+2.47 EUR
100+2.21 EUR
250+2.09 EUR
500+2.01 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
2EDF7275FXUMA2 2EDF7275FXUMA2 Infineon Technologies Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057 Description: IC GATE DRVR HALF-BRIDG DSO16
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 1500 V
Supplier Device Package: PG-DSO-16-11
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 8380 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.84 EUR
10+2.85 EUR
25+2.60 EUR
100+2.33 EUR
250+2.20 EUR
500+2.12 EUR
1000+2.06 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
SPB10N10 G SPB10N10 G Infineon Technologies SPB10N10.pdf Description: MOSFET N-CH 100V 10.3A TO263-3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BFR182E6327 BFR182E6327 Infineon Technologies INFNS10845-1.pdf?t.download=true&u=5oefqw Description: BFR182 - LOW-NOISE SI TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12dB ~ 18dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT23
Part Status: Active
auf Bestellung 79170 Stücke:
Lieferzeit 10-14 Tag (e)
3480+0.16 EUR
Mindestbestellmenge: 3480
Im Einkaufswagen  Stück im Wert von  UAH
IRFR7746PBF-INF IRFR7746PBF-INF Infineon Technologies IRSD-S-A0000176414-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 75V 56A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 35A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: TO-252AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3107 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC120N03LSG BSC120N03LSG Infineon Technologies INFNS27238-1.pdf?t.download=true&u=5oefqw Description: POWER FIELD-EFFECT TRANSISTOR, 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB120N03S4L03ATMA1 IPB120N03S4L03ATMA1 Infineon Technologies Infineon-IPB120N03S4L-03-DS-v01_01-EN.pdf?fileId=5546d46249a28d750149a3606cf60466 Description: MOSFET N-CH 30V 120A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 40µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
286+1.76 EUR
Mindestbestellmenge: 286
Im Einkaufswagen  Stück im Wert von  UAH
BSC074N15NS5ATMA1 BSC074N15NS5ATMA1 Infineon Technologies Infineon-BSC074N15NS5-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f8032bc9a7092 Description: MOSFET N-CH 150V 114A TSON-8-3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 50A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 136µA
Supplier Device Package: PG-TSON-8-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 75 V
auf Bestellung 5210 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.76 EUR
10+5.16 EUR
100+3.68 EUR
500+3.49 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
PTAB182002TCV2XWSA1 Infineon Technologies Description: IC RF FET LDMOS 190W H-49248H-4
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
REFENGCOOLFAN1KWTOBO1 REFENGCOOLFAN1KWTOBO1 Infineon Technologies Infineon-1kW_Engine_Cooling_Fan_Reference_Design_Fact_Sheet-ProductBrief-v01_00-EN.pdf?fileId=5546d46272e49d2a0172ffa9a403738e Description: DEV KIT
Packaging: Bulk
Function: Power Supply
Type: Power Management
Contents: Board(s)
Supplied Contents: Board(s)
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
1+1401.56 EUR
Im Einkaufswagen  Stück im Wert von  UAH
S2GO3DTLI493DW2BWA0TOBO1 S2GO3DTLI493DW2BWA0TOBO1 Infineon Technologies Infineon-TLI493D-W2BW-DataSheet-v01_00-EN.pdf?fileId=5546d46273a5366f0173b9bc938d2e1d Description: DEV KIT
Packaging: Bulk
Interface: I2C
Voltage - Supply: 2.8V ~ 3.5V
Sensor Type: Hall Effect
Utilized IC / Part: TLI493D
Supplied Contents: Board(s)
Embedded: Yes
Sensing Range: ±160mT
Part Status: Active
auf Bestellung 41 Stücke:
Lieferzeit 10-14 Tag (e)
1+23.53 EUR
Im Einkaufswagen  Stück im Wert von  UAH
TLE42062GXUMA2 TLE42062GXUMA2 Infineon Technologies Infineon-TLE4206-2G-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a8a3f58793f40 Description: IC MOTOR DRIVER 8V-18V 14DSO
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 800mA
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 8V ~ 18V
Technology: Bipolar
Voltage - Load: 8V ~ 18V
Supplier Device Package: PG-DSO-14
Motor Type - AC, DC: Servo DC
Grade: Automotive
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.56 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
TLE42062GXUMA2 TLE42062GXUMA2 Infineon Technologies Infineon-TLE4206-2G-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a8a3f58793f40 Description: IC MOTOR DRIVER 8V-18V 14DSO
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 800mA
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 8V ~ 18V
Technology: Bipolar
Voltage - Load: 8V ~ 18V
Supplier Device Package: PG-DSO-14
Motor Type - AC, DC: Servo DC
Grade: Automotive
Part Status: Active
auf Bestellung 4980 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.38 EUR
10+2.49 EUR
25+2.27 EUR
100+2.03 EUR
250+1.92 EUR
500+1.85 EUR
1000+1.79 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
BSP296NH6433XTMA1 BSP296NH6433XTMA1 Infineon Technologies BSP296N_rev2+0.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30433dd58def013dd5af675d001f Description: MOSFET N-CH 100V 1.2A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.2A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 100µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 152.7 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.41 EUR
8000+0.37 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
BSP296NH6433XTMA1 BSP296NH6433XTMA1 Infineon Technologies BSP296N_rev2+0.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30433dd58def013dd5af675d001f Description: MOSFET N-CH 100V 1.2A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.2A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 100µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 152.7 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 13094 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.71 EUR
17+1.06 EUR
100+0.70 EUR
500+0.54 EUR
1000+0.49 EUR
2000+0.45 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
62-1039PBF Infineon Technologies Description: IC MOSFET
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT17-05WH6327 Infineon Technologies INFNS15700-1.pdf?t.download=true&u=5oefqw Description: RF MIXER/DETECTOR SCHOTTKY DIODE
Packaging: Bulk
Package / Case: SC-70, SOT-323
Diode Type: Schottky - 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT17-05E6327HTSA1 BAT17-05E6327HTSA1 Infineon Technologies INFNS15700-1.pdf?t.download=true&u=5oefqw Description: RF MIXER/DETECTOR SCHOTTKY DIODE
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT23-3-3
Part Status: Active
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT17-06WE6327 BAT17-06WE6327 Infineon Technologies INFNS15700-1.pdf?t.download=true&u=5oefqw Description: DIODE SCHOTTKY 4V 150MW SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Diode Type: Schottky - 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3406+0.14 EUR
Mindestbestellmenge: 3406
Im Einkaufswagen  Stück im Wert von  UAH
BAT17-06WH6327 BAT17-06WH6327 Infineon Technologies INFNS15700-1.pdf?t.download=true&u=5oefqw Description: RF MIXER/DETECTOR SCHOTTKY DIODE
Packaging: Bulk
Package / Case: SC-70, SOT-323
Diode Type: Schottky - 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
4157+0.11 EUR
Mindestbestellmenge: 4157
Im Einkaufswagen  Stück im Wert von  UAH
BAT-17-07 BAT-17-07 Infineon Technologies INFNS15700-1.pdf?t.download=true&u=5oefqw Description: MIXER DIODE, VHF TO UHF
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT143-4
Part Status: Active
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT1707E6327HTSA1 BAT1707E6327HTSA1 Infineon Technologies Infineon-BAT17-07-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017efcca5b420773 Description: DIODE SCHOTTKY 4V 150MW SOT143-4
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT-143-3D
Part Status: Active
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
auf Bestellung 5511 Stücke:
Lieferzeit 10-14 Tag (e)
34+0.53 EUR
50+0.36 EUR
56+0.32 EUR
100+0.27 EUR
250+0.25 EUR
500+0.24 EUR
1000+0.23 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
BAT17E6327 BAT17E6327 Infineon Technologies INFNS15700-1.pdf?t.download=true&u=5oefqw Description: BAT17 - RF MIXER AND DETECTOR SC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT1707E6327 Infineon Technologies Description: MIXER DIODE, VHF TO UHF
Packaging: Bulk
Part Status: Active
Package / Case: TO-253-4, TO-253AA
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT-143-3D
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSM200GA120DN2FS Infineon Technologies Description: IGBT MODULE
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DD89N16KKHPSA1 DD89N16KKHPSA1 Infineon Technologies INFNS29284-1.pdf?t.download=true&u=5oefqw Description: DIODE ARRAY MOD 1200V 140A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLF11251EPXUMA1 TLF11251EPXUMA1 Infineon Technologies Infineon-TLF11251EP-DataSheet-v01_01-EN.pdf?fileId=5546d46276fb756a01772419f728582d Description: IC GATE DRVR HALF-BRIDGE 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-PowerTSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 2.35V ~ 7V
Input Type: Non-Inverting
Supplier Device Package: PG-TSDSO-14-5
Rise / Fall Time (Typ): 60ns, 60ns
Channel Type: Single
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 2.31V, 4.69V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Grade: Automotive
Part Status: Active
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
auf Bestellung 4609 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.66 EUR
10+3.48 EUR
25+3.18 EUR
100+2.86 EUR
250+2.70 EUR
500+2.61 EUR
1000+2.53 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
TDA5201 TDA5201 Infineon Technologies TDA5201.pdf?t.download=true&amp;u=n9mhyd Description: ASK SINGLE CONVERSION RECEIVER
Features: RSSI Equipped
Packaging: Bulk
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Sensitivity: -113dBm
Mounting Type: Surface Mount
Frequency: 315MHz ~ 345MHz
Modulation or Protocol: ASK
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Applications: Alarm Systems, Communication Systems, Remote Control Systems
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-28
Part Status: Active
auf Bestellung 40048 Stücke:
Lieferzeit 10-14 Tag (e)
213+2.29 EUR
Mindestbestellmenge: 213
Im Einkaufswagen  Stück im Wert von  UAH
TDA5201GEG TDA5201GEG Infineon Technologies Infineon-TDA5201-DS-v01_06-EN.pdf?fileId=5546d4625debb399015e286e5c233cb3 Description: ASK SINGLE CONVERSION RECEIVER
Features: RSSI Equipped
Packaging: Bulk
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Sensitivity: -113dBm
Mounting Type: Surface Mount
Frequency: 315MHz ~ 345MHz
Modulation or Protocol: ASK
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Applications: Alarm Systems, Communication Systems
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-28
Part Status: Active
auf Bestellung 425 Stücke:
Lieferzeit 10-14 Tag (e)
180+2.68 EUR
Mindestbestellmenge: 180
Im Einkaufswagen  Stück im Wert von  UAH
PEF 80902 H V1.1 PEF 80902 H V1.1 Infineon Technologies PEF%2080902.pdf Description: IC TELECOM INTERFACE MQFP-44
Packaging: Tray
Package / Case: 44-QFP
Mounting Type: Surface Mount
Function: Second Generation Modular
Interface: ISDN
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Supplier Device Package: P-MQFP-44
Part Status: Obsolete
Number of Circuits: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAS16E6393 BAS16E6393 Infineon Technologies INFNS10853-1.pdf?t.download=true&u=5oefqw Description: RECTIFIER DIODE
auf Bestellung 144000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
BAS16E6433HTMA1 BAS16E6433HTMA1 Infineon Technologies bas16series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141b93811b03ff Description: DIODE STANDARD 80V 250MA PGSOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
auf Bestellung 1579186 Stücke:
Lieferzeit 10-14 Tag (e)
12878+0.03 EUR
Mindestbestellmenge: 12878
Im Einkaufswagen  Stück im Wert von  UAH
BGS12P2L6E6327XTSA1 BGS12P2L6E6327XTSA1 Infineon Technologies Infineon-BGS12P2L6-DataSheet-v02_00-EN.pdf?fileId=5546d4626cb27db2016d4487d53603ce Description: IC RF SWITCH SPDT 6GHZ TSLP6-4
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPDT
RF Type: GSM, LTE, W-CDMA
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.4V
Insertion Loss: 0.51dB
Frequency Range: 50MHz ~ 6GHz
Test Frequency: 5.925GHz
Isolation: 27dB
Supplier Device Package: PG-TSLP-6-4
IIP3: 74dBm
auf Bestellung 70801 Stücke:
Lieferzeit 10-14 Tag (e)
31+0.58 EUR
36+0.50 EUR
38+0.47 EUR
100+0.43 EUR
250+0.40 EUR
500+0.39 EUR
1000+0.37 EUR
5000+0.34 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH
IRS26072DSTRPBF IRS26072DSTRPBF Infineon Technologies fundamentals-of-power-semiconductors Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
auf Bestellung 14705 Stücke:
Lieferzeit 10-14 Tag (e)
270+1.86 EUR
Mindestbestellmenge: 270
Im Einkaufswagen  Stück im Wert von  UAH
IRS2609DSTRPBF-INF IRS2609DSTRPBF-INF Infineon Technologies Description: IRS2609D - HALF-BRIDGE DRIVER
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE9015QUXUMA1 TLE9015QUXUMA1 Infineon Technologies Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4 Description: IC BATT BALANCER TQFP-48-11
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Function: Battery Balancer
Interface: UART
Supplier Device Package: PG-TQFP-48-11
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE9015QUXUMA1 TLE9015QUXUMA1 Infineon Technologies Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4 Description: IC BATT BALANCER TQFP-48-11
Packaging: Cut Tape (CT)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Function: Battery Balancer
Interface: UART
Supplier Device Package: PG-TQFP-48-11
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PROFETMOTHERBRDTOBO1 PROFETMOTHERBRDTOBO1 Infineon Technologies Profet+_Demoboard_V14.pdf?fileId=5546d4614815da8801484091b947131c Description: MOTHERBOARD PROFET 12V/24V
Packaging: Box
Function: Automotive
Type: Interface
Supplied Contents: Board(s)
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
1+402.23 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SPOC2MOTHERBOARDTOBO1 SPOC2MOTHERBOARDTOBO1 Infineon Technologies Infineon-SPOC_Application_UserManual-UM-v01_00-EN.pdf?fileId=5546d462636cc8fb0163ee3784416c4c Description: SPOC+2 MOTHERBOARD
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Supplied Contents: Board(s)
Secondary Attributes: Graphical User Interface (GUI)
Part Status: Active
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
1+396.42 EUR
Im Einkaufswagen  Stück im Wert von  UAH
TDA21201-S7 TDA21201-S7 Infineon Technologies TDA21201.pdf Description: IC HALF BRIDGE DRVR 30A TO220-7
Features: Bootstrap Circuit
Packaging: Tube
Package / Case: TO-220-7
Mounting Type: Through Hole
Interface: PWM
Operating Temperature: -25°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 9V ~ 15V
Rds On (Typ): 4.8mOhm LS, 13.3mOhm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 30A
Technology: Power MOSFET
Voltage - Load: 9V ~ 15V
Supplier Device Package: P-TO220-7-230
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive
Part Status: Obsolete
auf Bestellung 358 Stücke:
Lieferzeit 10-14 Tag (e)
148+3.16 EUR
Mindestbestellmenge: 148
Im Einkaufswagen  Stück im Wert von  UAH
IPB120P04P404ATMA1 IPB120P04P404ATMA1 Infineon Technologies Infineon-IPP_B_I120P04P4_04-DS-v01_01-EN.pdf?fileId=db3a30432f69f146012f784299de2e44 Description: MOSFET P-CH 40V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 340µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14790 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB120P04P404ATMA1 IPB120P04P404ATMA1 Infineon Technologies Infineon-IPP_B_I120P04P4_04-DS-v01_01-EN.pdf?fileId=db3a30432f69f146012f784299de2e44 Description: MOSFET P-CH 40V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 340µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14790 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB120P04P4L03ATMA2 IPB120P04P4L03ATMA2 Infineon Technologies Infineon-IPP_B_I120P04P4L_03-DataSheet-v01_02-EN.pdf?fileId=db3a30432f69f146012f783b3b5a2e3f Description: MOSFET P-CH 40V 120A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 340µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+2.08 EUR
2000+2.04 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
IPB120P04P4L03ATMA2 IPB120P04P4L03ATMA2 Infineon Technologies Infineon-IPP_B_I120P04P4L_03-DataSheet-v01_02-EN.pdf?fileId=db3a30432f69f146012f783b3b5a2e3f Description: MOSFET P-CH 40V 120A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 340µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2705 Stücke:
Lieferzeit 10-14 Tag (e)
3+5.97 EUR
10+3.91 EUR
100+2.74 EUR
500+2.24 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IPB120P04P404ATMA2 IPB120P04P404ATMA2 Infineon Technologies Infineon-IPP_B_I120P04P4_04-DS-v01_01-EN.pdf?fileId=db3a30432f69f146012f784299de2e44 Description: MOSFET P-CH 40V 120A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 100A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 340µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14790 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+2.06 EUR
2000+1.96 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
IPB120P04P404ATMA2 IPB120P04P404ATMA2 Infineon Technologies Infineon-IPP_B_I120P04P4_04-DS-v01_01-EN.pdf?fileId=db3a30432f69f146012f784299de2e44 Description: MOSFET P-CH 40V 120A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 100A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 340µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14790 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 4291 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.73 EUR
10+3.68 EUR
100+2.59 EUR
500+2.16 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IDD03SG60CXTMA2 IDD03SG60CXTMA2 Infineon Technologies Infineon-IDD03SG60C-DS-v02_04-en.pdf?fileId=db3a304327b897500127dcb296f11a53 Description: DIODE SIL CARB 600V 3A PGTO2523
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 60pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PG-TO252-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 3 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
auf Bestellung 2013 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.63 EUR
10+2.32 EUR
100+1.58 EUR
500+1.26 EUR
1000+1.16 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
TLT807B0EPVXUMA1 TLT807B0EPVXUMA1 Infineon Technologies Infineon-TLT807B0EPV-DS-v01_00-EN.pdf?fileId=5546d4625bd71aa0015c10aadbe33e93 Description: IC REG LIN POS ADJ 70MA TSDSO14
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 70mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 36 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-TSDSO-14-1
Voltage - Output (Max): 20V
Voltage - Output (Min/Fixed): 1.2V
Control Features: Current Limit, Enable
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 70mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFR9N20DTRLPBF irfr9n20dpbf.pdf?fileId=5546d462533600a40153563610b1213b
IRFR9N20DTRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 9.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.6A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TC333LP32F200FAALXUMA1 Infineon-TriCore_Family_BR-ProductBrochure-v01_00-EN.pdf?fileId=5546d4625d5945ed015dc81f47b436c7
TC333LP32F200FAALXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 248K x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: DMA, I2S, PWM, WDT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-TQFP-100-23
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2EDS8265HXUMA2 Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057
2EDS8265HXUMA2
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-30
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 350 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.40 EUR
10+4.07 EUR
25+3.73 EUR
100+3.37 EUR
250+3.19 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IPL60R065C7AUMA1 Infineon-IPL60R065C7-DS-v02_00-EN.pdf?fileId=5546d462518ffd850151b090ab7b75cd
IPL60R065C7AUMA1
Hersteller: Infineon Technologies
Description: MOSFET HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 15.9A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: PG-VSON-4-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 400 V
auf Bestellung 5100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.65 EUR
10+7.55 EUR
100+5.72 EUR
500+5.51 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IRF6811STR1PBF irf6811spbf.pdf?fileId=5546d462533600a4015355f0b3661ab6
Hersteller: Infineon Technologies
Description: MOSFET N CH 25V 19A DIRECTFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IGD15N65T6ARMA1 Infineon-IGD15N65T6-DataSheet-v02_03-EN.pdf?fileId=5546d462766a0c1701766c35b2760de1
IGD15N65T6ARMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 11.5A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/117ns
Switching Energy: 230µJ (on), 110µJ (off)
Test Condition: 400V, 11.5A, 47Ohm, 15V
Gate Charge: 37 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 57.5 A
Power - Max: 100 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IGD15N65T6ARMA1 Infineon-IGD15N65T6-DataSheet-v02_03-EN.pdf?fileId=5546d462766a0c1701766c35b2760de1
IGD15N65T6ARMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 30A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 11.5A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/117ns
Switching Energy: 230µJ (on), 110µJ (off)
Test Condition: 400V, 11.5A, 47Ohm, 15V
Gate Charge: 37 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 57.5 A
Power - Max: 100 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AIGB15N65H5ATMA1 Infineon-AIGB15N65H5-DataSheet-v02_01-EN.pdf?fileId=5546d462749a7c2d0174b6669e363172
AIGB15N65H5ATMA1
Hersteller: Infineon Technologies
Description: IGBT NPT 650V 30A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Td (on/off) @ 25°C: 24ns/22ns
Switching Energy: 160µJ (on), 40µJ (off)
Test Condition: 400V, 7.5A, 39Ohm, 15V
Gate Charge: 40 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 105 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 958 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.21 EUR
10+4.08 EUR
100+2.87 EUR
500+2.57 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
AIKB15N65DH5ATMA1 Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4
AIKB15N65DH5ATMA1
Hersteller: Infineon Technologies
Description: IGBT NPT 650V 15A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 650 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.36 EUR
10+4.87 EUR
100+3.46 EUR
500+3.24 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
AIKB15N65DF5ATMA1 Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4
AIKB15N65DF5ATMA1
Hersteller: Infineon Technologies
Description: IGBT NPT 650V 15A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 650 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.36 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
PEF2260NV3.0SICOFI
Hersteller: Infineon Technologies
Description: SICOFI CODEC FILTER
auf Bestellung 90 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+27.53 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
2EDF7175FXUMA2 Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057
2EDF7175FXUMA2
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDG DSO16
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-11
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 1A, 2A
DigiKey Programmable: Not Verified
auf Bestellung 8431 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.33 EUR
10+3.22 EUR
25+2.94 EUR
100+2.64 EUR
250+2.49 EUR
500+2.41 EUR
1000+2.34 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
2EDS8165HXUMA2 Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057
2EDS8165HXUMA2
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-30
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 1A, 2A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 700 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.66 EUR
10+2.71 EUR
25+2.47 EUR
100+2.21 EUR
250+2.09 EUR
500+2.01 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
2EDF7275FXUMA2 Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057
2EDF7275FXUMA2
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDG DSO16
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 1500 V
Supplier Device Package: PG-DSO-16-11
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 8380 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.84 EUR
10+2.85 EUR
25+2.60 EUR
100+2.33 EUR
250+2.20 EUR
500+2.12 EUR
1000+2.06 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
SPB10N10 G SPB10N10.pdf
SPB10N10 G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 10.3A TO263-3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BFR182E6327 INFNS10845-1.pdf?t.download=true&u=5oefqw
BFR182E6327
Hersteller: Infineon Technologies
Description: BFR182 - LOW-NOISE SI TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12dB ~ 18dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT23
Part Status: Active
auf Bestellung 79170 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3480+0.16 EUR
Mindestbestellmenge: 3480
Im Einkaufswagen  Stück im Wert von  UAH
IRFR7746PBF-INF IRSD-S-A0000176414-1.pdf?t.download=true&u=5oefqw
IRFR7746PBF-INF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 56A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 35A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: TO-252AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3107 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC120N03LSG INFNS27238-1.pdf?t.download=true&u=5oefqw
BSC120N03LSG
Hersteller: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR, 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB120N03S4L03ATMA1 Infineon-IPB120N03S4L-03-DS-v01_01-EN.pdf?fileId=5546d46249a28d750149a3606cf60466
IPB120N03S4L03ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 120A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 40µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
286+1.76 EUR
Mindestbestellmenge: 286
Im Einkaufswagen  Stück im Wert von  UAH
BSC074N15NS5ATMA1 Infineon-BSC074N15NS5-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f8032bc9a7092
BSC074N15NS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 114A TSON-8-3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 50A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 136µA
Supplier Device Package: PG-TSON-8-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 75 V
auf Bestellung 5210 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.76 EUR
10+5.16 EUR
100+3.68 EUR
500+3.49 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
PTAB182002TCV2XWSA1
Hersteller: Infineon Technologies
Description: IC RF FET LDMOS 190W H-49248H-4
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
REFENGCOOLFAN1KWTOBO1 Infineon-1kW_Engine_Cooling_Fan_Reference_Design_Fact_Sheet-ProductBrief-v01_00-EN.pdf?fileId=5546d46272e49d2a0172ffa9a403738e
REFENGCOOLFAN1KWTOBO1
Hersteller: Infineon Technologies
Description: DEV KIT
Packaging: Bulk
Function: Power Supply
Type: Power Management
Contents: Board(s)
Supplied Contents: Board(s)
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+1401.56 EUR
Im Einkaufswagen  Stück im Wert von  UAH
S2GO3DTLI493DW2BWA0TOBO1 Infineon-TLI493D-W2BW-DataSheet-v01_00-EN.pdf?fileId=5546d46273a5366f0173b9bc938d2e1d
S2GO3DTLI493DW2BWA0TOBO1
Hersteller: Infineon Technologies
Description: DEV KIT
Packaging: Bulk
Interface: I2C
Voltage - Supply: 2.8V ~ 3.5V
Sensor Type: Hall Effect
Utilized IC / Part: TLI493D
Supplied Contents: Board(s)
Embedded: Yes
Sensing Range: ±160mT
Part Status: Active
auf Bestellung 41 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+23.53 EUR
Im Einkaufswagen  Stück im Wert von  UAH
TLE42062GXUMA2 Infineon-TLE4206-2G-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a8a3f58793f40
TLE42062GXUMA2
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 8V-18V 14DSO
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 800mA
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 8V ~ 18V
Technology: Bipolar
Voltage - Load: 8V ~ 18V
Supplier Device Package: PG-DSO-14
Motor Type - AC, DC: Servo DC
Grade: Automotive
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.56 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
TLE42062GXUMA2 Infineon-TLE4206-2G-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a8a3f58793f40
TLE42062GXUMA2
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 8V-18V 14DSO
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 800mA
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 8V ~ 18V
Technology: Bipolar
Voltage - Load: 8V ~ 18V
Supplier Device Package: PG-DSO-14
Motor Type - AC, DC: Servo DC
Grade: Automotive
Part Status: Active
auf Bestellung 4980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.38 EUR
10+2.49 EUR
25+2.27 EUR
100+2.03 EUR
250+1.92 EUR
500+1.85 EUR
1000+1.79 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
BSP296NH6433XTMA1 BSP296N_rev2+0.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30433dd58def013dd5af675d001f
BSP296NH6433XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 1.2A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.2A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 100µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 152.7 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.41 EUR
8000+0.37 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
BSP296NH6433XTMA1 BSP296N_rev2+0.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30433dd58def013dd5af675d001f
BSP296NH6433XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 1.2A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.2A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 100µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 152.7 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 13094 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.71 EUR
17+1.06 EUR
100+0.70 EUR
500+0.54 EUR
1000+0.49 EUR
2000+0.45 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
62-1039PBF
Hersteller: Infineon Technologies
Description: IC MOSFET
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT17-05WH6327 INFNS15700-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: RF MIXER/DETECTOR SCHOTTKY DIODE
Packaging: Bulk
Package / Case: SC-70, SOT-323
Diode Type: Schottky - 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT17-05E6327HTSA1 INFNS15700-1.pdf?t.download=true&u=5oefqw
BAT17-05E6327HTSA1
Hersteller: Infineon Technologies
Description: RF MIXER/DETECTOR SCHOTTKY DIODE
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT23-3-3
Part Status: Active
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT17-06WE6327 INFNS15700-1.pdf?t.download=true&u=5oefqw
BAT17-06WE6327
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 4V 150MW SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Diode Type: Schottky - 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3406+0.14 EUR
Mindestbestellmenge: 3406
Im Einkaufswagen  Stück im Wert von  UAH
BAT17-06WH6327 INFNS15700-1.pdf?t.download=true&u=5oefqw
BAT17-06WH6327
Hersteller: Infineon Technologies
Description: RF MIXER/DETECTOR SCHOTTKY DIODE
Packaging: Bulk
Package / Case: SC-70, SOT-323
Diode Type: Schottky - 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4157+0.11 EUR
Mindestbestellmenge: 4157
Im Einkaufswagen  Stück im Wert von  UAH
BAT-17-07 INFNS15700-1.pdf?t.download=true&u=5oefqw
BAT-17-07
Hersteller: Infineon Technologies
Description: MIXER DIODE, VHF TO UHF
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT143-4
Part Status: Active
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT1707E6327HTSA1 Infineon-BAT17-07-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017efcca5b420773
BAT1707E6327HTSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 4V 150MW SOT143-4
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT-143-3D
Part Status: Active
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
auf Bestellung 5511 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
50+0.36 EUR
56+0.32 EUR
100+0.27 EUR
250+0.25 EUR
500+0.24 EUR
1000+0.23 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
BAT17E6327 INFNS15700-1.pdf?t.download=true&u=5oefqw
BAT17E6327
Hersteller: Infineon Technologies
Description: BAT17 - RF MIXER AND DETECTOR SC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT1707E6327
Hersteller: Infineon Technologies
Description: MIXER DIODE, VHF TO UHF
Packaging: Bulk
Part Status: Active
Package / Case: TO-253-4, TO-253AA
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT-143-3D
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSM200GA120DN2FS
Hersteller: Infineon Technologies
Description: IGBT MODULE
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DD89N16KKHPSA1 INFNS29284-1.pdf?t.download=true&u=5oefqw
DD89N16KKHPSA1
Hersteller: Infineon Technologies
Description: DIODE ARRAY MOD 1200V 140A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLF11251EPXUMA1 Infineon-TLF11251EP-DataSheet-v01_01-EN.pdf?fileId=5546d46276fb756a01772419f728582d
TLF11251EPXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-PowerTSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 2.35V ~ 7V
Input Type: Non-Inverting
Supplier Device Package: PG-TSDSO-14-5
Rise / Fall Time (Typ): 60ns, 60ns
Channel Type: Single
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 2.31V, 4.69V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Grade: Automotive
Part Status: Active
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
auf Bestellung 4609 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.66 EUR
10+3.48 EUR
25+3.18 EUR
100+2.86 EUR
250+2.70 EUR
500+2.61 EUR
1000+2.53 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
TDA5201 TDA5201.pdf?t.download=true&amp;u=n9mhyd
TDA5201
Hersteller: Infineon Technologies
Description: ASK SINGLE CONVERSION RECEIVER
Features: RSSI Equipped
Packaging: Bulk
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Sensitivity: -113dBm
Mounting Type: Surface Mount
Frequency: 315MHz ~ 345MHz
Modulation or Protocol: ASK
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Applications: Alarm Systems, Communication Systems, Remote Control Systems
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-28
Part Status: Active
auf Bestellung 40048 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
213+2.29 EUR
Mindestbestellmenge: 213
Im Einkaufswagen  Stück im Wert von  UAH
TDA5201GEG Infineon-TDA5201-DS-v01_06-EN.pdf?fileId=5546d4625debb399015e286e5c233cb3
TDA5201GEG
Hersteller: Infineon Technologies
Description: ASK SINGLE CONVERSION RECEIVER
Features: RSSI Equipped
Packaging: Bulk
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Sensitivity: -113dBm
Mounting Type: Surface Mount
Frequency: 315MHz ~ 345MHz
Modulation or Protocol: ASK
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Applications: Alarm Systems, Communication Systems
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-28
Part Status: Active
auf Bestellung 425 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
180+2.68 EUR
Mindestbestellmenge: 180
Im Einkaufswagen  Stück im Wert von  UAH
PEF 80902 H V1.1 PEF%2080902.pdf
PEF 80902 H V1.1
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE MQFP-44
Packaging: Tray
Package / Case: 44-QFP
Mounting Type: Surface Mount
Function: Second Generation Modular
Interface: ISDN
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Supplier Device Package: P-MQFP-44
Part Status: Obsolete
Number of Circuits: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAS16E6393 INFNS10853-1.pdf?t.download=true&u=5oefqw
BAS16E6393
Hersteller: Infineon Technologies
Description: RECTIFIER DIODE
auf Bestellung 144000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
BAS16E6433HTMA1 bas16series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141b93811b03ff
BAS16E6433HTMA1
Hersteller: Infineon Technologies
Description: DIODE STANDARD 80V 250MA PGSOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
auf Bestellung 1579186 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12878+0.03 EUR
Mindestbestellmenge: 12878
Im Einkaufswagen  Stück im Wert von  UAH
BGS12P2L6E6327XTSA1 Infineon-BGS12P2L6-DataSheet-v02_00-EN.pdf?fileId=5546d4626cb27db2016d4487d53603ce
BGS12P2L6E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH SPDT 6GHZ TSLP6-4
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPDT
RF Type: GSM, LTE, W-CDMA
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.4V
Insertion Loss: 0.51dB
Frequency Range: 50MHz ~ 6GHz
Test Frequency: 5.925GHz
Isolation: 27dB
Supplier Device Package: PG-TSLP-6-4
IIP3: 74dBm
auf Bestellung 70801 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
31+0.58 EUR
36+0.50 EUR
38+0.47 EUR
100+0.43 EUR
250+0.40 EUR
500+0.39 EUR
1000+0.37 EUR
5000+0.34 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH
IRS26072DSTRPBF fundamentals-of-power-semiconductors
IRS26072DSTRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
auf Bestellung 14705 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
270+1.86 EUR
Mindestbestellmenge: 270
Im Einkaufswagen  Stück im Wert von  UAH
IRS2609DSTRPBF-INF
IRS2609DSTRPBF-INF
Hersteller: Infineon Technologies
Description: IRS2609D - HALF-BRIDGE DRIVER
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE9015QUXUMA1 Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4
TLE9015QUXUMA1
Hersteller: Infineon Technologies
Description: IC BATT BALANCER TQFP-48-11
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Function: Battery Balancer
Interface: UART
Supplier Device Package: PG-TQFP-48-11
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE9015QUXUMA1 Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4
TLE9015QUXUMA1
Hersteller: Infineon Technologies
Description: IC BATT BALANCER TQFP-48-11
Packaging: Cut Tape (CT)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Function: Battery Balancer
Interface: UART
Supplier Device Package: PG-TQFP-48-11
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PROFETMOTHERBRDTOBO1 Profet+_Demoboard_V14.pdf?fileId=5546d4614815da8801484091b947131c
PROFETMOTHERBRDTOBO1
Hersteller: Infineon Technologies
Description: MOTHERBOARD PROFET 12V/24V
Packaging: Box
Function: Automotive
Type: Interface
Supplied Contents: Board(s)
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+402.23 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SPOC2MOTHERBOARDTOBO1 Infineon-SPOC_Application_UserManual-UM-v01_00-EN.pdf?fileId=5546d462636cc8fb0163ee3784416c4c
SPOC2MOTHERBOARDTOBO1
Hersteller: Infineon Technologies
Description: SPOC+2 MOTHERBOARD
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Supplied Contents: Board(s)
Secondary Attributes: Graphical User Interface (GUI)
Part Status: Active
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+396.42 EUR
Im Einkaufswagen  Stück im Wert von  UAH
TDA21201-S7 TDA21201.pdf
TDA21201-S7
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRVR 30A TO220-7
Features: Bootstrap Circuit
Packaging: Tube
Package / Case: TO-220-7
Mounting Type: Through Hole
Interface: PWM
Operating Temperature: -25°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 9V ~ 15V
Rds On (Typ): 4.8mOhm LS, 13.3mOhm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 30A
Technology: Power MOSFET
Voltage - Load: 9V ~ 15V
Supplier Device Package: P-TO220-7-230
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive
Part Status: Obsolete
auf Bestellung 358 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
148+3.16 EUR
Mindestbestellmenge: 148
Im Einkaufswagen  Stück im Wert von  UAH
IPB120P04P404ATMA1 Infineon-IPP_B_I120P04P4_04-DS-v01_01-EN.pdf?fileId=db3a30432f69f146012f784299de2e44
IPB120P04P404ATMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 340µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14790 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB120P04P404ATMA1 Infineon-IPP_B_I120P04P4_04-DS-v01_01-EN.pdf?fileId=db3a30432f69f146012f784299de2e44
IPB120P04P404ATMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 340µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14790 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB120P04P4L03ATMA2 Infineon-IPP_B_I120P04P4L_03-DataSheet-v01_02-EN.pdf?fileId=db3a30432f69f146012f783b3b5a2e3f
IPB120P04P4L03ATMA2
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 120A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 340µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+2.08 EUR
2000+2.04 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
IPB120P04P4L03ATMA2 Infineon-IPP_B_I120P04P4L_03-DataSheet-v01_02-EN.pdf?fileId=db3a30432f69f146012f783b3b5a2e3f
IPB120P04P4L03ATMA2
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 120A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 340µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2705 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+5.97 EUR
10+3.91 EUR
100+2.74 EUR
500+2.24 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IPB120P04P404ATMA2 Infineon-IPP_B_I120P04P4_04-DS-v01_01-EN.pdf?fileId=db3a30432f69f146012f784299de2e44
IPB120P04P404ATMA2
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 120A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 100A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 340µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14790 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+2.06 EUR
2000+1.96 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
IPB120P04P404ATMA2 Infineon-IPP_B_I120P04P4_04-DS-v01_01-EN.pdf?fileId=db3a30432f69f146012f784299de2e44
IPB120P04P404ATMA2
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 120A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 100A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 340µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14790 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 4291 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.73 EUR
10+3.68 EUR
100+2.59 EUR
500+2.16 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IDD03SG60CXTMA2 Infineon-IDD03SG60C-DS-v02_04-en.pdf?fileId=db3a304327b897500127dcb296f11a53
IDD03SG60CXTMA2
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 600V 3A PGTO2523
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 60pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PG-TO252-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 3 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
auf Bestellung 2013 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.63 EUR
10+2.32 EUR
100+1.58 EUR
500+1.26 EUR
1000+1.16 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
TLT807B0EPVXUMA1 Infineon-TLT807B0EPV-DS-v01_00-EN.pdf?fileId=5546d4625bd71aa0015c10aadbe33e93
TLT807B0EPVXUMA1
Hersteller: Infineon Technologies
Description: IC REG LIN POS ADJ 70MA TSDSO14
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 70mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 36 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-TSDSO-14-1
Voltage - Output (Max): 20V
Voltage - Output (Min/Fixed): 1.2V
Control Features: Current Limit, Enable
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 70mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 248 395 396 397 398 399 400 401 402 403 404 405 496 744 992 1240 1488 1736 1984 2232 2480 2482  [ Nächste Seite >> ]