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IDD06SG60CXTMA2 IDD06SG60CXTMA2 Infineon Technologies IDD06SG60C_rev2.4.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a304327b897500127dd36c4741a85 Description: DIODE SIL CARB 600V 6A PGTO2523
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO252-3
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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IDD06SG60CXTMA2 IDD06SG60CXTMA2 Infineon Technologies IDD06SG60C_rev2.4.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a304327b897500127dd36c4741a85 Description: DIODE SIL CARB 600V 6A PGTO2523
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO252-3
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 6 A
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10+5.11 EUR
100+3.58 EUR
500+2.93 EUR
1000+2.73 EUR
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TLS4125D0EPVXUMA1 TLS4125D0EPVXUMA1 Infineon Technologies Infineon-TLS4125D0EPV-DataSheet-v01_00-EN.pdf?fileId=5546d46270c4f93e01710b60b6163b3f Description: IC REG BUCK ADJ 2.5A TSDSO-14-5
Packaging: Tape & Reel (TR)
Package / Case: 14-PowerTSSOP (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2.5A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2.8MHz
Voltage - Input (Max): 35V
Topology: Buck
Supplier Device Package: PG-TSDSO-14-5
Synchronous Rectifier: Yes
Voltage - Output (Max): 10V
Voltage - Input (Min): 3.7V
Voltage - Output (Min/Fixed): 3V
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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IAUC60N04S6N044ATMA1 IAUC60N04S6N044ATMA1 Infineon Technologies Infineon-IAUC60N04S6N044-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c8843d110a5 Description: IAUC60N04S6N044ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.52mOhm @ 30A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3V @ 14µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1042 pF @ 25 V
Qualification: AEC-Q101
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IAUC60N04S6N044ATMA1 IAUC60N04S6N044ATMA1 Infineon Technologies Infineon-IAUC60N04S6N044-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c8843d110a5 Description: IAUC60N04S6N044ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.52mOhm @ 30A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3V @ 14µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1042 pF @ 25 V
Qualification: AEC-Q101
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9+2.53 EUR
14+1.59 EUR
100+1.06 EUR
500+0.82 EUR
1000+0.75 EUR
2000+0.68 EUR
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TLE73683EXUMA3 TLE73683EXUMA3 Infineon Technologies Infineon-TLE7368-DataSheet-v02_60-EN.pdf?fileId=5546d46258fc0bc1015969d271b041d1 Description: OPTIREG PMIC
Supplier Device Package: PG-DSO-36
Applications: Power Supply, Automotive Applications
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Input: 4.5V ~ 45V
Number of Outputs: 3
Mounting Type: Surface Mount
Voltage - Output: 5V, 3.3V/2.6V, 1.3V
Package / Case: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
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TLE73683EXUMA3 TLE73683EXUMA3 Infineon Technologies Infineon-TLE7368-DataSheet-v02_60-EN.pdf?fileId=5546d46258fc0bc1015969d271b041d1 Description: OPTIREG PMIC
Supplier Device Package: PG-DSO-36
Applications: Power Supply, Automotive Applications
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Input: 4.5V ~ 45V
Number of Outputs: 3
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)
Voltage - Output: 5V, 3.3V/2.6V, 1.3V
Package / Case: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad
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10+11.3 EUR
25+10.47 EUR
100+9.58 EUR
250+9.14 EUR
500+8.88 EUR
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FZ1800R12KF4S1 Infineon Technologies INFNS28629-1.pdf?t.download=true&u=5oefqw Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 1.8kA
NTC Thermistor: No
Supplier Device Package: AG-IHMB190
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 2700 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 10500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 110 nF @ 25 V
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FZ1800R12KL4C Infineon Technologies INFNS28630-1.pdf?t.download=true&u=5oefqw Description: IGBT MOD 1200V 2850A IHM190-2-1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 1.8kA
NTC Thermistor: No
Supplier Device Package: AG-IHM190-2-1
Part Status: Active
Current - Collector (Ic) (Max): 2850 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 11500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 135 nF @ 25 V
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BSZ180P03NS3GATMA1 BSZ180P03NS3GATMA1 Infineon Technologies Infineon-BSZ180P03NS3_G-DS-v02_01-en.pdf?fileId=db3a304326dfb13001271f04398f4ec1 Description: MOSFET P-CH 30V 9A/39.6A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 39.6A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 3.1V @ 48µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 15 V
Produkt ist nicht verfügbar
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BSZ180P03NS3GATMA1 BSZ180P03NS3GATMA1 Infineon Technologies Infineon-BSZ180P03NS3_G-DS-v02_01-en.pdf?fileId=db3a304326dfb13001271f04398f4ec1 Description: MOSFET P-CH 30V 9A/39.6A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 39.6A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 3.1V @ 48µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 15 V
auf Bestellung 2139 Stücke:
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12+1.82 EUR
19+1.14 EUR
50+0.84 EUR
100+0.74 EUR
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FZ1800R12HP4B9NPSA1 Infineon Technologies INFNS28629-1.pdf?t.download=true&u=5oefqw Description: IGBT MOD 1200V 2700A AG-IHMB190
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 1.8kA
NTC Thermistor: No
Supplier Device Package: AG-IHMB190
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 2700 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 10500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 110 nF @ 25 V
auf Bestellung 105 Stücke:
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1+1669.99 EUR
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FZ1800R17HP4B9HOSA2 FZ1800R17HP4B9HOSA2 Infineon Technologies Infineon-FZ1800R17HP4_B9-DS-v02_02-en_de.pdf?fileId=db3a3043243b5f1701246cc2a9a86344 Description: IGBT MOD 1700V 1800A 11500W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1800A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench
Current - Collector (Ic) (Max): 1800 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 11500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 145 nF @ 25 V
auf Bestellung 30 Stücke:
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1+1990.56 EUR
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FZ1800R17HP4B29BOSA2 FZ1800R17HP4B29BOSA2 Infineon Technologies Infineon-FZ1800R17HP4_B29-DS-v03_01-EN.pdf?fileId=5546d462525dbac401527e7ca7f76d09 Description: IGBT MOD 1700V 1800A AG-IHMB190
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1.8kA
NTC Thermistor: No
Supplier Device Package: AG-IHMB190
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1800 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 11500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 145 nF @ 25 V
auf Bestellung 214 Stücke:
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FZ1800R17HP4_B29 Infineon Technologies INFN-S-A0001441249-1.pdf?t.download=true&u=5oefqw Description: FZ1800R17 - IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1.8kA
NTC Thermistor: No
Supplier Device Package: AG-IHMB190
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1800 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 11500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 145 nF @ 25 V
auf Bestellung 43 Stücke:
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1+2887.61 EUR
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FZ1800R17KE3B2NOSA1 Infineon Technologies FZ1800R17KE3_B2_Rev2.2_2013-11-25.pdf Description: IGBT MOD 1700V 2850A 12.5W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1.8kA
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 2850 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 12.5 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 160 nF @ 25 V
auf Bestellung 232 Stücke:
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1+2944.06 EUR
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FZ1800R17KF4NOSA1 Infineon Technologies Infineon-FZ2400R12HE4_B9-DS-v02_04-EN.pdf?fileId=db3a30433e4143bd013e46d8f64f417d Description: IGBT MOD 1200V 3560A 13500W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 3 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 2.4kA
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 3560 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 13500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 150 nF @ 25 V
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FZ1800R17HE4B9NPSA1 Infineon Technologies INFNS27394-1.pdf?t.download=true&u=5oefqw Description: INSULATED GATE BIPOLAR TRANSISTO
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IR3595AMTRPBF IR3595AMTRPBF Infineon Technologies pb-ir3595.pdf?fileId=5546d462533600a40153568087cb2903 Description: IC REG CTLR BUCK PWM 56QFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: 56-QFN (7x7)
Part Status: Not For New Designs
Produkt ist nicht verfügbar
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IR3595AMTRPBF IR3595AMTRPBF Infineon Technologies pb-ir3595.pdf?fileId=5546d462533600a40153568087cb2903 Description: IC REG CTLR BUCK PWM 56QFN
Packaging: Cut Tape (CT)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: 56-QFN (7x7)
Part Status: Not For New Designs
Produkt ist nicht verfügbar
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2N7002L6327HTSA1 2N7002L6327HTSA1 Infineon Technologies 2N7002_Rev2.1.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a304319bc939a0119c2a9461e79e6 Description: MOSFET N-CH 60V 300MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PG-SOT23-PO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 25 V
Produkt ist nicht verfügbar
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BSZ042N04NSG BSZ042N04NSG Infineon Technologies INFNS30160-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 40V 40A TO220AB
auf Bestellung 47574 Stücke:
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ESD230B1W0201E6327XTSA1 ESD230B1W0201E6327XTSA1 Infineon Technologies Infineon-ESD230-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d46255a50e820155c031740b5934 Description: TVS DIODE 5.5VWM 14VC WLL-2-1
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 7pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: WLL-2-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.05V
Voltage - Clamping (Max) @ Ipp: 14V
Power - Peak Pulse: 56W
Produkt ist nicht verfügbar
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IPS514G IPS514G Infineon Technologies IPS511G,512G,514G.pdf Description: IC PWR SWITCH N-CHAN 1:1 28SOIC
Features: Auto Restart
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 130mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 35V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 850mA
Ratio - Input:Output: 1:1
Supplier Device Package: 28-SOIC
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
Part Status: Obsolete
Produkt ist nicht verfügbar
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IPS50R520CPBKMA1 Infineon Technologies Infineon-IPS50R520CP-DS-v02_02-en.pdf?fileId=db3a3043416e106e014173331b383638 Description: LOW POWER_LEGACY
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PG-TO251-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
Produkt ist nicht verfügbar
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IPS50R520CPAKMA1 IPS50R520CPAKMA1 Infineon Technologies IPS50R520CP_Rev2.2_8-15-13.pdf Description: MOSFET N-CH 500V 7.1A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
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TLE75620EMTXUMA1 Infineon Technologies Infineon-SPIDER+SPI_Driver_Family_PB-PB-v01_00-EN.pdf?fileId=5546d462525dbac40152cf7456c17b4d Description: IC PWR DRIVER N-CHAN 1:8 SSOP14
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PEB3265HV1.5 Infineon Technologies Description: SLIC FILTER
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PEB 3265 H V1.5 PEB 3265 H V1.5 Infineon Technologies PEBx264%2C%20PEBx265%2C%20PEB436x%2C%20PEB4266.pdf Description: IC TELECOM INTERFACE MQFP-64
Packaging: Tray
Package / Case: 64-QFP
Mounting Type: Surface Mount
Function: Dual Channel Subscriber Line Interface Circuit (DuSLIC)
Interface: IOM-2, PCM
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.3V
Current - Supply: 105mA
Supplier Device Package: P-MQFP-64-1
Number of Circuits: 2
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TLD1313ELXUMA1 TLD1313ELXUMA1 Infineon Technologies Infineon-TLD1313EL-DS-v01_01-EN.pdf?fileId=5546d46258fc0bc101596e37ba51352b Description: IC LED DRVR LINEAR 120MA 14SSOP
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 3
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 120mA
Internal Switch(s): Yes
Supplier Device Package: PG-SSOP-14-5
Voltage - Supply (Min): 5.5V
Voltage - Supply (Max): 40V
Grade: Automotive
Part Status: Active
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100+1.11 EUR
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TLD1313EL TLD1313EL Infineon Technologies Infineon-TLD1313EL-DS-v01_01-EN.pdf?fileId=5546d46258fc0bc101596e37ba51352b Description: IC LED DRVR LINEAR 120MA 14SSOP
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BGS22X11E6331XUMA1 Infineon Technologies Description: DPDT DIFFERENTIAL RF SWITCH
Packaging: Bulk
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1EDB9275FXUMA1 1EDB9275FXUMA1 Infineon Technologies infineon-1edb7275f-datasheet-en.pdf Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Voltage - Supply: 10V ~ 56V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 2
Gate Type: IGBT, SiC MOSFET
Current - Peak Output (Source, Sink): 4A, 8A
DigiKey Programmable: Not Verified
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1EDB9275FXUMA1 1EDB9275FXUMA1 Infineon Technologies infineon-1edb7275f-datasheet-en.pdf Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Voltage - Supply: 10V ~ 56V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 2
Gate Type: IGBT, SiC MOSFET
Current - Peak Output (Source, Sink): 4A, 8A
DigiKey Programmable: Not Verified
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REF10WTXQI4102TOBO1 REF10WTXQI4102TOBO1 Infineon Technologies infineon-bss138w-ds-en.pdf Description: DEV KIT
Packaging: Box
For Use With/Related Products: 1EDN7512B, BSS138WH, BSZ097N04LS, IFX20002MB V33, XMC6521SC-Q040X, WCDSC006
Frequency: 127.8kHz
Type: Transmitter
Contents: Board(s)
Utilized IC / Part: 1EDN7512B, BSS138WH, BSZ097N04LS, IFX20002MB V33, XMC6521SC-Q040X, WCDSC006
Supplied Contents: Board(s)
Part Status: Active
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BTS115ANKSA1 BTS115ANKSA1 Infineon Technologies BTS115A%20%20II.pdf Description: MOSFET N-CH 50V 15.5A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.5A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 7.8A, 4.5V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 735 pF @ 25 V
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BTS129NKSA1 BTS129NKSA1 Infineon Technologies INFNS05889-1.pdf?t.download=true&u=5oefqw Description: POWER FIELD-EFFECT TRANSISTOR, 2
Packaging: Bulk
Part Status: Active
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BB640E6327 BB640E6327 Infineon Technologies INFNS16374-1.pdf?t.download=true&u=5oefqw Description: BB640 - VARACTOR DIODE
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AIGB40N65F5ATMA1 AIGB40N65F5ATMA1 Infineon Technologies Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4 Description: IGBT NPT 650V 40A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
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AIGB40N65H5ATMA1 AIGB40N65H5ATMA1 Infineon Technologies Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4 Description: IGBT NPT 650V 40A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
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IKZA40N65RH5XKSA1 IKZA40N65RH5XKSA1 Infineon Technologies Infineon-IKZA40N65RH5-DataSheet-v02_01-EN.pdf?fileId=5546d46275b79adb0175dc28474d31b2 Description: IGBT TRENCH FS 650V 74A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO247-4-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/165ns
Switching Energy: 140µJ (on), 120µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 250 W
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FP75R17N3E4BPSA1 Infineon Technologies Infineon-FP75R17N3E4-DS-v03_00-EN.pdf?fileId=5546d46254e133b40155342467625538 Description: IGBT MOD 1700V 125A 555W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 125 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 555 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.8 nF @ 25 V
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EVAL1ED3491MX12MTOBO1 EVAL1ED3491MX12MTOBO1 Infineon Technologies Infineon-AN2020-05_EVAL-1ED3491Mx12M-ApplicationNotes-v01_00-EN.pdf?fileId=5546d46274f6cd4c0174f82b3bad0279 Description: 1ED3491MX12MTOBO1 DEV KIT
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 1ED3491MU12M, 1ED3491MC12M
Supplied Contents: Board(s)
Primary Attributes: 1-Channel (Single)
Secondary Attributes: On-Board LEDs
Embedded: Yes, MCU
Part Status: Active
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IRGH4607DPBF Infineon Technologies Description: IGBT 600V 8PQFN
Produkt ist nicht verfügbar
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IQE006NE2LM5CGATMA1 IQE006NE2LM5CGATMA1 Infineon Technologies Infineon-IQE006NE2LM5CG-DataSheet-v02_01-EN.pdf?fileId=5546d4626f229553016f8b11f53c1aa7 Description: MOSFET N-CH 25V 41A/298A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 298A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TTFN-9-1
Part Status: Active
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 82.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V
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IQE006NE2LM5CGATMA1 IQE006NE2LM5CGATMA1 Infineon Technologies Infineon-IQE006NE2LM5CG-DataSheet-v02_01-EN.pdf?fileId=5546d4626f229553016f8b11f53c1aa7 Description: MOSFET N-CH 25V 41A/298A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 298A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TTFN-9-1
Part Status: Active
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 82.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V
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IQE006NE2LM5ATMA1 IQE006NE2LM5ATMA1 Infineon Technologies Infineon-IQE006NE2LM5-DataSheet-v02_01-EN.pdf?fileId=5546d4626f229553016f8b08cb821aa4 Description: MOSFET N-CH 25V 41A/298A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 298A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSON-8-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 82.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V
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IQE006NE2LM5ATMA1 IQE006NE2LM5ATMA1 Infineon Technologies Infineon-IQE006NE2LM5-DataSheet-v02_01-EN.pdf?fileId=5546d4626f229553016f8b08cb821aa4 Description: MOSFET N-CH 25V 41A/298A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 298A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSON-8-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 82.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V
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TLS4120D0EPV33XUMA1 TLS4120D0EPV33XUMA1 Infineon Technologies Infineon-TLS4120D0EP%20V33-DataSheet-v01_00-EN.pdf?fileId=5546d46270c4f93e01710b6096703b36 Description: IC REG BUCK 3.3V 2A TSDSO-14-5
Packaging: Tape & Reel (TR)
Package / Case: 14-PowerTSSOP (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2.8MHz
Voltage - Input (Max): 35V
Topology: Buck
Supplier Device Package: PG-TSDSO-14-5
Synchronous Rectifier: Yes
Voltage - Input (Min): 3.7V
Voltage - Output (Min/Fixed): 3.3V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLS4120D0EPV33XUMA1 TLS4120D0EPV33XUMA1 Infineon Technologies Infineon-TLS4120D0EP%20V33-DataSheet-v01_00-EN.pdf?fileId=5546d46270c4f93e01710b6096703b36 Description: IC REG BUCK 3.3V 2A TSDSO-14-5
Packaging: Cut Tape (CT)
Package / Case: 14-PowerTSSOP (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2.8MHz
Voltage - Input (Max): 35V
Topology: Buck
Supplier Device Package: PG-TSDSO-14-5
Synchronous Rectifier: Yes
Voltage - Input (Min): 3.7V
Voltage - Output (Min/Fixed): 3.3V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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3+7.77 EUR
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TLS4125D0EPV33XUMA1 TLS4125D0EPV33XUMA1 Infineon Technologies Infineon-TLS4125D0EP%20V33-DataSheet-v01_00-EN.pdf?fileId=5546d46270c4f93e01710b60ad4b3b3c Description: OPTIREG SWITCHER
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TLS4125D0EPV33XUMA1 TLS4125D0EPV33XUMA1 Infineon Technologies Infineon-TLS4125D0EP%20V33-DataSheet-v01_00-EN.pdf?fileId=5546d46270c4f93e01710b60ad4b3b3c Description: OPTIREG SWITCHER
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F3L75R07W2E3B11BOMA1 F3L75R07W2E3B11BOMA1 Infineon Technologies INFNS28273-1.pdf?t.download=true&u=5oefqw Description: IGBT MODULE 650V 95A 250W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.6 nF @ 25 V
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FP35R12KT4BPSA1 FP35R12KT4BPSA1 Infineon Technologies Infineon-FP35R12KT4-DS-v02_00-en_de.pdf?fileId=db3a304316f66ee801174440e4132f81 Description: IGBT MOD 1200V 25A AG-ECONO2-8
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2-8
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 210 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
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BSF110N06NT3GXUMA1 Infineon Technologies INFNS19160-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: DirectFET™ Isometric ST
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 30A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 33µA
Supplier Device Package: MG-WDSON-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 30 V
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BBY57-02V BBY57-02V Infineon Technologies INFNS15333-1.pdf?t.download=true&u=5oefqw Description: VARIABLE CAPACITANCE DIODE
Packaging: Bulk
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C
Capacitance @ Vr, F: 5.5pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C4
Supplier Device Package: PG-SC79-2
Part Status: Active
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 4.5
Produkt ist nicht verfügbar
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DD1200S17H4_B2 Infineon Technologies INFN-S-A0001441409-1.pdf?t.download=true&u=5oefqw Description: DD1200S17 - RECTIFIER DIODE MODU
auf Bestellung 82 Stücke:
Lieferzeit 10-14 Tag (e)
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DD1200S12H4NPSA1 Infineon Technologies INFN-S-A0003369620-1.pdf?t.download=true&u=5oefqw Description: RECTIFIER DIODE MODULE
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CG7815AAT Infineon Technologies Description: MEMORY SRAM ASYNC
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CG7815AA Infineon Technologies Description: MEMORY SRAM ASYNC
Packaging: Tray
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IDD06SG60CXTMA2 IDD06SG60C_rev2.4.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a304327b897500127dd36c4741a85
IDD06SG60CXTMA2
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 600V 6A PGTO2523
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO252-3
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+2.61 EUR
Mindestbestellmenge: 2500 Stücke
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IDD06SG60CXTMA2 IDD06SG60C_rev2.4.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a304327b897500127dd36c4741a85
IDD06SG60CXTMA2
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 600V 6A PGTO2523
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO252-3
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 6 A
auf Bestellung 9208 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.79 EUR
10+5.11 EUR
100+3.58 EUR
500+2.93 EUR
1000+2.73 EUR
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TLS4125D0EPVXUMA1 Infineon-TLS4125D0EPV-DataSheet-v01_00-EN.pdf?fileId=5546d46270c4f93e01710b60b6163b3f
TLS4125D0EPVXUMA1
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJ 2.5A TSDSO-14-5
Packaging: Tape & Reel (TR)
Package / Case: 14-PowerTSSOP (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2.5A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2.8MHz
Voltage - Input (Max): 35V
Topology: Buck
Supplier Device Package: PG-TSDSO-14-5
Synchronous Rectifier: Yes
Voltage - Output (Max): 10V
Voltage - Input (Min): 3.7V
Voltage - Output (Min/Fixed): 3V
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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IAUC60N04S6N044ATMA1 Infineon-IAUC60N04S6N044-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c8843d110a5
IAUC60N04S6N044ATMA1
Hersteller: Infineon Technologies
Description: IAUC60N04S6N044ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.52mOhm @ 30A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3V @ 14µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1042 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.62 EUR
Mindestbestellmenge: 5000 Stücke
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IAUC60N04S6N044ATMA1 Infineon-IAUC60N04S6N044-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c8843d110a5
IAUC60N04S6N044ATMA1
Hersteller: Infineon Technologies
Description: IAUC60N04S6N044ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.52mOhm @ 30A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3V @ 14µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1042 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.53 EUR
14+1.59 EUR
100+1.06 EUR
500+0.82 EUR
1000+0.75 EUR
2000+0.68 EUR
Mindestbestellmenge: 9 Stücke
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TLE73683EXUMA3 Infineon-TLE7368-DataSheet-v02_60-EN.pdf?fileId=5546d46258fc0bc1015969d271b041d1
TLE73683EXUMA3
Hersteller: Infineon Technologies
Description: OPTIREG PMIC
Supplier Device Package: PG-DSO-36
Applications: Power Supply, Automotive Applications
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Input: 4.5V ~ 45V
Number of Outputs: 3
Mounting Type: Surface Mount
Voltage - Output: 5V, 3.3V/2.6V, 1.3V
Package / Case: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+7.87 EUR
Mindestbestellmenge: 1000 Stücke
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TLE73683EXUMA3 Infineon-TLE7368-DataSheet-v02_60-EN.pdf?fileId=5546d46258fc0bc1015969d271b041d1
TLE73683EXUMA3
Hersteller: Infineon Technologies
Description: OPTIREG PMIC
Supplier Device Package: PG-DSO-36
Applications: Power Supply, Automotive Applications
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Input: 4.5V ~ 45V
Number of Outputs: 3
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)
Voltage - Output: 5V, 3.3V/2.6V, 1.3V
Package / Case: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad
auf Bestellung 4962 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+14.6 EUR
10+11.3 EUR
25+10.47 EUR
100+9.58 EUR
250+9.14 EUR
500+8.88 EUR
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FZ1800R12KF4S1 INFNS28629-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 1.8kA
NTC Thermistor: No
Supplier Device Package: AG-IHMB190
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 2700 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 10500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 110 nF @ 25 V
auf Bestellung 77 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+2212.63 EUR
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FZ1800R12KL4C INFNS28630-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 2850A IHM190-2-1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 1.8kA
NTC Thermistor: No
Supplier Device Package: AG-IHM190-2-1
Part Status: Active
Current - Collector (Ic) (Max): 2850 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 11500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 135 nF @ 25 V
auf Bestellung 59 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+2508.96 EUR
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BSZ180P03NS3GATMA1 Infineon-BSZ180P03NS3_G-DS-v02_01-en.pdf?fileId=db3a304326dfb13001271f04398f4ec1
BSZ180P03NS3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 9A/39.6A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 39.6A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 3.1V @ 48µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 15 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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BSZ180P03NS3GATMA1 Infineon-BSZ180P03NS3_G-DS-v02_01-en.pdf?fileId=db3a304326dfb13001271f04398f4ec1
BSZ180P03NS3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 9A/39.6A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 39.6A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 3.1V @ 48µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 15 V
auf Bestellung 2139 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
12+1.82 EUR
19+1.14 EUR
50+0.84 EUR
100+0.74 EUR
500+0.57 EUR
Mindestbestellmenge: 12 Stücke
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FZ1800R12HP4B9NPSA1 INFNS28629-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 2700A AG-IHMB190
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 1.8kA
NTC Thermistor: No
Supplier Device Package: AG-IHMB190
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 2700 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 10500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 110 nF @ 25 V
auf Bestellung 105 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+1669.99 EUR
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FZ1800R17HP4B9HOSA2 Infineon-FZ1800R17HP4_B9-DS-v02_02-en_de.pdf?fileId=db3a3043243b5f1701246cc2a9a86344
FZ1800R17HP4B9HOSA2
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 1800A 11500W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1800A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench
Current - Collector (Ic) (Max): 1800 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 11500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 145 nF @ 25 V
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+1990.56 EUR
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FZ1800R17HP4B29BOSA2 Infineon-FZ1800R17HP4_B29-DS-v03_01-EN.pdf?fileId=5546d462525dbac401527e7ca7f76d09
FZ1800R17HP4B29BOSA2
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 1800A AG-IHMB190
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1.8kA
NTC Thermistor: No
Supplier Device Package: AG-IHMB190
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1800 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 11500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 145 nF @ 25 V
auf Bestellung 214 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+2195.01 EUR
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FZ1800R17HP4_B29 INFN-S-A0001441249-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: FZ1800R17 - IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1.8kA
NTC Thermistor: No
Supplier Device Package: AG-IHMB190
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1800 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 11500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 145 nF @ 25 V
auf Bestellung 43 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+2887.61 EUR
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FZ1800R17KE3B2NOSA1 FZ1800R17KE3_B2_Rev2.2_2013-11-25.pdf
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 2850A 12.5W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1.8kA
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 2850 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 12.5 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 160 nF @ 25 V
auf Bestellung 232 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+2944.06 EUR
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FZ1800R17KF4NOSA1 Infineon-FZ2400R12HE4_B9-DS-v02_04-EN.pdf?fileId=db3a30433e4143bd013e46d8f64f417d
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 3560A 13500W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 3 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 2.4kA
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 3560 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 13500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 150 nF @ 25 V
auf Bestellung 48 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+3485.31 EUR
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FZ1800R17HE4B9NPSA1 INFNS27394-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: INSULATED GATE BIPOLAR TRANSISTO
Produkt ist nicht verfügbar
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IR3595AMTRPBF pb-ir3595.pdf?fileId=5546d462533600a40153568087cb2903
IR3595AMTRPBF
Hersteller: Infineon Technologies
Description: IC REG CTLR BUCK PWM 56QFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: 56-QFN (7x7)
Part Status: Not For New Designs
Produkt ist nicht verfügbar
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IR3595AMTRPBF pb-ir3595.pdf?fileId=5546d462533600a40153568087cb2903
IR3595AMTRPBF
Hersteller: Infineon Technologies
Description: IC REG CTLR BUCK PWM 56QFN
Packaging: Cut Tape (CT)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: 56-QFN (7x7)
Part Status: Not For New Designs
Produkt ist nicht verfügbar
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2N7002L6327HTSA1 2N7002_Rev2.1.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a304319bc939a0119c2a9461e79e6
2N7002L6327HTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 300MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PG-SOT23-PO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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BSZ042N04NSG INFNS30160-1.pdf?t.download=true&u=5oefqw
BSZ042N04NSG
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 40A TO220AB
auf Bestellung 47574 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 704 Stücke
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ESD230B1W0201E6327XTSA1 Infineon-ESD230-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d46255a50e820155c031740b5934
ESD230B1W0201E6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 5.5VWM 14VC WLL-2-1
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 7pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: WLL-2-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.05V
Voltage - Clamping (Max) @ Ipp: 14V
Power - Peak Pulse: 56W
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
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IPS514G IPS511G,512G,514G.pdf
IPS514G
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 28SOIC
Features: Auto Restart
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 130mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 35V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 850mA
Ratio - Input:Output: 1:1
Supplier Device Package: 28-SOIC
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
Part Status: Obsolete
Produkt ist nicht verfügbar
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IPS50R520CPBKMA1 Infineon-IPS50R520CP-DS-v02_02-en.pdf?fileId=db3a3043416e106e014173331b383638
Hersteller: Infineon Technologies
Description: LOW POWER_LEGACY
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PG-TO251-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
Produkt ist nicht verfügbar
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IPS50R520CPAKMA1 IPS50R520CP_Rev2.2_8-15-13.pdf
IPS50R520CPAKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 7.1A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
Produkt ist nicht verfügbar
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TLE75620EMTXUMA1 Infineon-SPIDER+SPI_Driver_Family_PB-PB-v01_00-EN.pdf?fileId=5546d462525dbac40152cf7456c17b4d
Hersteller: Infineon Technologies
Description: IC PWR DRIVER N-CHAN 1:8 SSOP14
Produkt ist nicht verfügbar
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PEB3265HV1.5
Hersteller: Infineon Technologies
Description: SLIC FILTER
Produkt ist nicht verfügbar
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PEB 3265 H V1.5 PEBx264%2C%20PEBx265%2C%20PEB436x%2C%20PEB4266.pdf
PEB 3265 H V1.5
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE MQFP-64
Packaging: Tray
Package / Case: 64-QFP
Mounting Type: Surface Mount
Function: Dual Channel Subscriber Line Interface Circuit (DuSLIC)
Interface: IOM-2, PCM
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.3V
Current - Supply: 105mA
Supplier Device Package: P-MQFP-64-1
Number of Circuits: 2
Produkt ist nicht verfügbar
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TLD1313ELXUMA1 Infineon-TLD1313EL-DS-v01_01-EN.pdf?fileId=5546d46258fc0bc101596e37ba51352b
TLD1313ELXUMA1
Hersteller: Infineon Technologies
Description: IC LED DRVR LINEAR 120MA 14SSOP
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 3
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 120mA
Internal Switch(s): Yes
Supplier Device Package: PG-SSOP-14-5
Voltage - Supply (Min): 5.5V
Voltage - Supply (Max): 40V
Grade: Automotive
Part Status: Active
auf Bestellung 3772 Stücke:
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11+1.93 EUR
16+1.39 EUR
25+1.25 EUR
100+1.11 EUR
250+1.04 EUR
500+0.99 EUR
1000+0.96 EUR
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TLD1313EL Infineon-TLD1313EL-DS-v01_01-EN.pdf?fileId=5546d46258fc0bc101596e37ba51352b
TLD1313EL
Hersteller: Infineon Technologies
Description: IC LED DRVR LINEAR 120MA 14SSOP
Produkt ist nicht verfügbar
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BGS22X11E6331XUMA1
Hersteller: Infineon Technologies
Description: DPDT DIFFERENTIAL RF SWITCH
Packaging: Bulk
auf Bestellung 392000 Stücke:
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AnzahlPrivatkunde
945+0.57 EUR
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1EDB9275FXUMA1 infineon-1edb7275f-datasheet-en.pdf
1EDB9275FXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Voltage - Supply: 10V ~ 56V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 2
Gate Type: IGBT, SiC MOSFET
Current - Peak Output (Source, Sink): 4A, 8A
DigiKey Programmable: Not Verified
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2500+1.54 EUR
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1EDB9275FXUMA1 infineon-1edb7275f-datasheet-en.pdf
1EDB9275FXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Voltage - Supply: 10V ~ 56V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 2
Gate Type: IGBT, SiC MOSFET
Current - Peak Output (Source, Sink): 4A, 8A
DigiKey Programmable: Not Verified
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7+3.06 EUR
10+2.25 EUR
25+2.03 EUR
100+1.81 EUR
250+1.7 EUR
500+1.64 EUR
1000+1.63 EUR
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REF10WTXQI4102TOBO1 infineon-bss138w-ds-en.pdf
REF10WTXQI4102TOBO1
Hersteller: Infineon Technologies
Description: DEV KIT
Packaging: Box
For Use With/Related Products: 1EDN7512B, BSS138WH, BSZ097N04LS, IFX20002MB V33, XMC6521SC-Q040X, WCDSC006
Frequency: 127.8kHz
Type: Transmitter
Contents: Board(s)
Utilized IC / Part: 1EDN7512B, BSS138WH, BSZ097N04LS, IFX20002MB V33, XMC6521SC-Q040X, WCDSC006
Supplied Contents: Board(s)
Part Status: Active
auf Bestellung 11 Stücke:
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AnzahlPrivatkunde
1+568.57 EUR
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BTS115ANKSA1 BTS115A%20%20II.pdf
BTS115ANKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 50V 15.5A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.5A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 7.8A, 4.5V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 735 pF @ 25 V
auf Bestellung 12000 Stücke:
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AnzahlPrivatkunde
56+9.63 EUR
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BTS129NKSA1 INFNS05889-1.pdf?t.download=true&u=5oefqw
BTS129NKSA1
Hersteller: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR, 2
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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BB640E6327 INFNS16374-1.pdf?t.download=true&u=5oefqw
BB640E6327
Hersteller: Infineon Technologies
Description: BB640 - VARACTOR DIODE
auf Bestellung 50667 Stücke:
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AIGB40N65F5ATMA1 Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4
AIGB40N65F5ATMA1
Hersteller: Infineon Technologies
Description: IGBT NPT 650V 40A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Produkt ist nicht verfügbar
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AIGB40N65H5ATMA1 Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4
AIGB40N65H5ATMA1
Hersteller: Infineon Technologies
Description: IGBT NPT 650V 40A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+10.28 EUR
10+6.84 EUR
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IKZA40N65RH5XKSA1 Infineon-IKZA40N65RH5-DataSheet-v02_01-EN.pdf?fileId=5546d46275b79adb0175dc28474d31b2
IKZA40N65RH5XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 74A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO247-4-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/165ns
Switching Energy: 140µJ (on), 120µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 250 W
auf Bestellung 181 Stücke:
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2+13.4 EUR
30+7.69 EUR
120+6.43 EUR
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FP75R17N3E4BPSA1 Infineon-FP75R17N3E4-DS-v03_00-EN.pdf?fileId=5546d46254e133b40155342467625538
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 125A 555W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 125 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 555 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.8 nF @ 25 V
auf Bestellung 232 Stücke:
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2+344.15 EUR
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EVAL1ED3491MX12MTOBO1 Infineon-AN2020-05_EVAL-1ED3491Mx12M-ApplicationNotes-v01_00-EN.pdf?fileId=5546d46274f6cd4c0174f82b3bad0279
EVAL1ED3491MX12MTOBO1
Hersteller: Infineon Technologies
Description: 1ED3491MX12MTOBO1 DEV KIT
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 1ED3491MU12M, 1ED3491MC12M
Supplied Contents: Board(s)
Primary Attributes: 1-Channel (Single)
Secondary Attributes: On-Board LEDs
Embedded: Yes, MCU
Part Status: Active
auf Bestellung 29 Stücke:
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1+150.25 EUR
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IRGH4607DPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 8PQFN
Produkt ist nicht verfügbar
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IQE006NE2LM5CGATMA1 Infineon-IQE006NE2LM5CG-DataSheet-v02_01-EN.pdf?fileId=5546d4626f229553016f8b11f53c1aa7
IQE006NE2LM5CGATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 41A/298A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 298A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TTFN-9-1
Part Status: Active
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 82.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V
Produkt ist nicht verfügbar
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IQE006NE2LM5CGATMA1 Infineon-IQE006NE2LM5CG-DataSheet-v02_01-EN.pdf?fileId=5546d4626f229553016f8b11f53c1aa7
IQE006NE2LM5CGATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 41A/298A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 298A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TTFN-9-1
Part Status: Active
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 82.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V
Produkt ist nicht verfügbar
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IQE006NE2LM5ATMA1 Infineon-IQE006NE2LM5-DataSheet-v02_01-EN.pdf?fileId=5546d4626f229553016f8b08cb821aa4
IQE006NE2LM5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 41A/298A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 298A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSON-8-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 82.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+1.96 EUR
Mindestbestellmenge: 5000 Stücke
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IQE006NE2LM5ATMA1 Infineon-IQE006NE2LM5-DataSheet-v02_01-EN.pdf?fileId=5546d4626f229553016f8b08cb821aa4
IQE006NE2LM5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 41A/298A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 298A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSON-8-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 82.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V
auf Bestellung 5335 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.59 EUR
10+4.3 EUR
50+3.31 EUR
100+2.99 EUR
500+2.43 EUR
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TLS4120D0EPV33XUMA1 Infineon-TLS4120D0EP%20V33-DataSheet-v01_00-EN.pdf?fileId=5546d46270c4f93e01710b6096703b36
TLS4120D0EPV33XUMA1
Hersteller: Infineon Technologies
Description: IC REG BUCK 3.3V 2A TSDSO-14-5
Packaging: Tape & Reel (TR)
Package / Case: 14-PowerTSSOP (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2.8MHz
Voltage - Input (Max): 35V
Topology: Buck
Supplier Device Package: PG-TSDSO-14-5
Synchronous Rectifier: Yes
Voltage - Input (Min): 3.7V
Voltage - Output (Min/Fixed): 3.3V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLS4120D0EPV33XUMA1 Infineon-TLS4120D0EP%20V33-DataSheet-v01_00-EN.pdf?fileId=5546d46270c4f93e01710b6096703b36
TLS4120D0EPV33XUMA1
Hersteller: Infineon Technologies
Description: IC REG BUCK 3.3V 2A TSDSO-14-5
Packaging: Cut Tape (CT)
Package / Case: 14-PowerTSSOP (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2.8MHz
Voltage - Input (Max): 35V
Topology: Buck
Supplier Device Package: PG-TSDSO-14-5
Synchronous Rectifier: Yes
Voltage - Input (Min): 3.7V
Voltage - Output (Min/Fixed): 3.3V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 2139 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.77 EUR
10+5.88 EUR
25+5.4 EUR
100+4.88 EUR
250+4.63 EUR
500+4.62 EUR
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TLS4125D0EPV33XUMA1 Infineon-TLS4125D0EP%20V33-DataSheet-v01_00-EN.pdf?fileId=5546d46270c4f93e01710b60ad4b3b3c
TLS4125D0EPV33XUMA1
Hersteller: Infineon Technologies
Description: OPTIREG SWITCHER
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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TLS4125D0EPV33XUMA1 Infineon-TLS4125D0EP%20V33-DataSheet-v01_00-EN.pdf?fileId=5546d46270c4f93e01710b60ad4b3b3c
TLS4125D0EPV33XUMA1
Hersteller: Infineon Technologies
Description: OPTIREG SWITCHER
auf Bestellung 1 Stücke:
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F3L75R07W2E3B11BOMA1 INFNS28273-1.pdf?t.download=true&u=5oefqw
F3L75R07W2E3B11BOMA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 650V 95A 250W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.6 nF @ 25 V
auf Bestellung 12 Stücke:
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AnzahlPrivatkunde
1+92.15 EUR
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FP35R12KT4BPSA1 Infineon-FP35R12KT4-DS-v02_00-en_de.pdf?fileId=db3a304316f66ee801174440e4132f81
FP35R12KT4BPSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 25A AG-ECONO2-8
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2-8
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 210 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
auf Bestellung 4 Stücke:
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1+129.98 EUR
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BSF110N06NT3GXUMA1 INFNS19160-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: DirectFET™ Isometric ST
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 30A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 33µA
Supplier Device Package: MG-WDSON-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 30 V
auf Bestellung 8335 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
443+1.23 EUR
Mindestbestellmenge: 443 Stücke
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BBY57-02V INFNS15333-1.pdf?t.download=true&u=5oefqw
BBY57-02V
Hersteller: Infineon Technologies
Description: VARIABLE CAPACITANCE DIODE
Packaging: Bulk
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C
Capacitance @ Vr, F: 5.5pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C4
Supplier Device Package: PG-SC79-2
Part Status: Active
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 4.5
Produkt ist nicht verfügbar
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DD1200S17H4_B2 INFN-S-A0001441409-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: DD1200S17 - RECTIFIER DIODE MODU
auf Bestellung 82 Stücke:
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DD1200S12H4NPSA1 INFN-S-A0003369620-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: RECTIFIER DIODE MODULE
Produkt ist nicht verfügbar
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CG7815AAT
Hersteller: Infineon Technologies
Description: MEMORY SRAM ASYNC
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CG7815AA
Hersteller: Infineon Technologies
Description: MEMORY SRAM ASYNC
Packaging: Tray
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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