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FD1000R17IE4DB2BOSA1 Infineon Technologies FD1000R17IE4D_B2.pdf Description: IGBT MOD 1700V 1390A 6250W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1000A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 1390 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 6250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 81 nF @ 25 V
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IPI530N15N3GXKSA1 IPI530N15N3GXKSA1 Infineon Technologies Infineon-IPD530N15N3-DS-v02_06-en.pdf?fileId=db3a30432662379201266a1f6dd2227c Description: PFET, 21A I(D), 150V, 0.053OHM,
Produkt ist nicht verfügbar
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TT425N16KOFHPSA3 TT425N16KOFHPSA3 Infineon Technologies Infineon-TT425N-DS-v03_10-en_de.pdf?fileId=db3a304412b407950112b42f7bf84bc9 Description: SCR MODULE 1.6KV 800A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 471 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 800 A
Voltage - Off State: 1.6 kV
Produkt ist nicht verfügbar
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DD600N16KAHPSA1 DD600N16KAHPSA1 Infineon Technologies DD600N_Rev1_06-05-03.pdf Description: DIODE MOD GP 1600V 600A BGPB60
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 600A
Supplier Device Package: BG-PB60-1
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 1800 A
Current - Reverse Leakage @ Vr: 40 mA @ 1600 V
Produkt ist nicht verfügbar
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TLE9250XLEXUMA1 TLE9250XLEXUMA1 Infineon Technologies Infineon-TLE9250X-DS-v01_00-EN.pdf?fileId=5546d4625debb399015e14b8cc665980 Description: IC TRANSCEIVER 1/1 PGTSON81
Packaging: Tape & Reel (TR)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-TSON-8-1
Receiver Hysteresis: 100 mV
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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TLE9250XLEXUMA1 TLE9250XLEXUMA1 Infineon Technologies Infineon-TLE9250X-DS-v01_00-EN.pdf?fileId=5546d4625debb399015e14b8cc665980 Description: IC TRANSCEIVER 1/1 PGTSON81
Packaging: Cut Tape (CT)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-TSON-8-1
Receiver Hysteresis: 100 mV
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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1000+1.31 EUR
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CY8C3666AXI-202 CY8C3666AXI-202 Infineon Technologies #!?fileId=8ac78c8c7d0d8da4017d0ec73d263e88 Description: IC MCU 8BIT 64KB FLASH 100TQFP
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CY8C20666AS-24LQXI CY8C20666AS-24LQXI Infineon Technologies infineon-ts2000-001-64564-software-module-datasheets-en.pdf?fileId=8ac78c8c7d0d8da4017d0fa2d0df1226&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all Description: IC CAPSENSE 32KB FLASH 48QFN
Packaging: Tray
Package / Case: 48-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, USB
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (32kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 48-QFN (6x6)
Number of I/O: 36
DigiKey Programmable: Not Verified
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2940+1.58 EUR
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TLI493DW2BWA3XTMA1 TLI493DW2BWA3XTMA1 Infineon Technologies Infineon-TLI493D-W2BW-DataSheet-v01_00-EN.pdf?fileId=5546d46273a5366f0173b9bc938d2e1d Description: SEN HALL EFFT OPEN DRAIN 5-WLCSP
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: 5-UFBGA, WLCSP
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 3.5V
Technology: Hall Effect
Sensing Range: ±160mT
Current - Supply (Max): 5mA
Supplier Device Package: 5-WLCSP (1.13x0.93)
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TLI493DW2BWA0XTSA1 TLI493DW2BWA0XTSA1 Infineon Technologies Infineon-TLI493D-W2BW-DataSheet-v01_00-EN.pdf?fileId=5546d46273a5366f0173b9bc938d2e1d Description: SEN HALL EFFT OPEN DRAIN 5-WLCSP
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: 5-UFBGA, WLCSP
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 3.5V
Technology: Hall Effect
Sensing Range: ±160mT
Current - Supply (Max): 5mA
Supplier Device Package: 5-WLCSP (1.13x0.93)
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TLI493DW2BWA0XTMA1 TLI493DW2BWA0XTMA1 Infineon Technologies Infineon-TLI493D-W2BW-DataSheet-v01_00-EN.pdf?fileId=5546d46273a5366f0173b9bc938d2e1d Description: SEN HALL EFFT OPEN DRAIN 5-WLCSP
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: 5-UFBGA, WLCSP
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Programmable
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 3.5V
Technology: Hall Effect
Sensing Range: ±160mT
Current - Supply (Max): 5mA
Supplier Device Package: 5-WLCSP (1.13x0.93)
Test Condition: -40°C ~ 125°C
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500+1.59 EUR
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5000+1.42 EUR
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TLI493DW2BWA1XTMA1 TLI493DW2BWA1XTMA1 Infineon Technologies Infineon-TLI493D-W2BW-DataSheet-v01_00-EN.pdf?fileId=5546d46273a5366f0173b9bc938d2e1d Description: SEN HALL EFFT OPEN DRAIN 5-WLCSP
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: 5-UFBGA, WLCSP
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Programmable
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 3.5V
Technology: Hall Effect
Sensing Range: ±160mT
Current - Supply (Max): 5mA
Supplier Device Package: 5-WLCSP (1.13x0.93)
Test Condition: -40°C ~ 125°C
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CY24293ZXCT CY24293ZXCT Infineon Technologies download Description: IC CLK BUFFER 2PR 3.3V 16-TSSOP
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BC857B E6327 BC857B E6327 Infineon Technologies INFNS16508-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 45V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
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BCR119WE6327 BCR119WE6327 Infineon Technologies Infineon-BCR119SERIES-DS-v01_01-en.pdf?fileId=db3a30431428a37301143f643b380286 Description: TRANS PREBIAS
Packaging: Bulk
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BCR119WH6327 Infineon Technologies INFNS17179-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 4.7 kOhms
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BCR191E6327 BCR191E6327 Infineon Technologies INFNS11718-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Supplier Device Package: PG-SOT23-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
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TUA 6036 T TUA 6036 T Infineon Technologies TUA6034_36_v251_110106.pdf Description: IC VIDEO TUNER 38TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Tuner
Voltage - Supply: 4.5V ~ 5.5V
Applications: Consumer Video
Standards: NTSC, PAL
Supplier Device Package: PG-TSSOP-38
Control Interface: I2C
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D850N36TXPSA1 D850N36TXPSA1 Infineon Technologies Infineon-D850N-DS-v03_00-en_de.pdf?fileId=db3a304323b87bc201240a18c6d04782 Description: DIODE GEN PURP 3.6KV 850A
Packaging: Bulk
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 850A
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 3600 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 850 A
Current - Reverse Leakage @ Vr: 50 mA @ 3600 V
Produkt ist nicht verfügbar
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D740N36TXPSA1 D740N36TXPSA1 Infineon Technologies D740N.pdf Description: DIODE GEN PURP 3.6KV 750A
Produkt ist nicht verfügbar
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D270N36TXPSA1 D270N36TXPSA1 Infineon Technologies D270N.pdf Description: DIODE GEN PURP 3.6KV 270A
Packaging: Bulk
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 270A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 3600 V
Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 250 A
Current - Reverse Leakage @ Vr: 20 mA @ 3600 V
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ASP1212-N20NT ASP1212-N20NT Infineon Technologies ASP1212_V1.06_12-16-12.pdf Description: IC REG CTRLR VR11 1OUT 56VQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3.3V
Operating Temperature: 0°C ~ 85°C (TA)
Applications: Controller, Intel VR11, VR11.1, AMD CPU
Supplier Device Package: PG-VQFN-56-901
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ASP1212-N50NT Infineon Technologies ASP1212_V1.06_12-16-12.pdf Description: IC REGULATOR PG-VQFN-56-901
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3.3V
Operating Temperature: 0°C ~ 85°C (TA)
Applications: Controller, Intel VR11, VR11.1, AMD CPU
Supplier Device Package: 56-VQFN (8x8)
Part Status: Obsolete
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ASP1212-N60DT Infineon Technologies Description: IC REGULATOR PG-VQFN-56-901
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3.3V
Operating Temperature: 0°C ~ 85°C (TA)
Applications: Controller, Intel VR11, VR11.1, AMD CPU
Supplier Device Package: 56-VQFN (8x8)
Part Status: Obsolete
Produkt ist nicht verfügbar
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ASP1212-N60NT ASP1212-N60NT Infineon Technologies ASP1212_V1.06_12-16-12.pdf Description: IC REG CTRLR VR11 1OUT 56VQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3.3V
Operating Temperature: 0°C ~ 85°C (TA)
Applications: Controller, Intel VR11, VR11.1, AMD CPU
Supplier Device Package: PG-VQFN-56-901
Produkt ist nicht verfügbar
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BAR88-02LRHE6327 BAR88-02LRHE6327 Infineon Technologies INFNS15409-1.pdf?t.download=true&u=5oefqw Description: PIN DIODE, 80V V(BR)
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2ED2101S06FXUMA1 2ED2101S06FXUMA1 Infineon Technologies Infineon-2ED2101S06F-DataSheet-v02_03-EN.pdf?fileId=5546d462766a0c1701766abe07220167 Description: IC GATE DRVR HI/LOW SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-69
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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2ED2101S06FXUMA1 2ED2101S06FXUMA1 Infineon Technologies Infineon-2ED2101S06F-DataSheet-v02_03-EN.pdf?fileId=5546d462766a0c1701766abe07220167 Description: IC GATE DRVR HI/LOW SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-69
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
Part Status: Active
DigiKey Programmable: Not Verified
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100+1.25 EUR
250+1.17 EUR
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1000+1.08 EUR
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S25FS064SAGMFN010 S25FS064SAGMFN010 Infineon Technologies Infineon-S25FS064S_64_Mbit_(8_Mbyte)_1.8-V_FS-S_Flash_Memory-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed526b25412&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 64MBIT SPI/QUAD 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 8M x 8
DigiKey Programmable: Verified
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S25FL116K0XMFN013 S25FL116K0XMFN013 Infineon Technologies S25FL116K_132K_164K__RevH_5-19-17.pdf Description: IC FLASH 16MBIT SPI/QUAD 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
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S25FL116K0XMFN010 S25FL116K0XMFN010 Infineon Technologies S25FL116K0XMFN010_Web.pdf Description: IC FLASH 16MBIT SPI/QUAD 8SOIC
Packaging: Tray
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
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S25FL116K0XMFN011 S25FL116K0XMFN011 Infineon Technologies S25FL116K0XMFN011_Web.pdf Description: IC FLASH 16MBIT SPI/QUAD 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ILD1151 ILD1151 Infineon Technologies INFNS19025-1.pdf?t.download=true&u=5oefqw Description: ILD1151 - LED DRIVER & ACTIVE BI
Packaging: Bulk
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 100kHz ~ 500kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Lighting
Current - Output / Channel: 550mA
Internal Switch(s): No
Topology: Flyback, SEPIC, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: PG-SSOP-14-1
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 45V
Part Status: Active
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PX8244HDMG008XTMA1 Infineon Technologies Orderable_Part_Number_OPN_Translation_Table_Web.pdf Description: LED PX8244HDMG008XTMA1
Packaging: Bulk
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IPP90R500C3 IPP90R500C3 Infineon Technologies IPP90R500C3_Rev1.0_7-29-08.pdf Description: MOSFET N-CH 900V 11A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 740µA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 100 V
Produkt ist nicht verfügbar
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IPB60R070CFD7ATMA1 IPB60R070CFD7ATMA1 Infineon Technologies Infineon-IPB60R070CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626b2d8e69016bb22a2b8c183d Description: MOSFET N-CH 600V 31A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 15.1A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 760µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2721 pF @ 400 V
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IPB60R040CFD7ATMA1 IPB60R040CFD7ATMA1 Infineon Technologies infineon-ipb60r040cfd7-datasheet-en.pdf Description: MOSFET N-CH 600V 50A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.9A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.25mA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4351 pF @ 400 V
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IPB60R040CFD7ATMA1 IPB60R040CFD7ATMA1 Infineon Technologies infineon-ipb60r040cfd7-datasheet-en.pdf Description: MOSFET N-CH 600V 50A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.9A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.25mA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4351 pF @ 400 V
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IPD60R750E6BTMA1 IPD60R750E6BTMA1 Infineon Technologies Infineon-IPD60R750E6-DS-v02_02-EN.pdf?fileId=db3a30432a14dd54012a194f52852b08 Description: MOSFET N-CH 600V 5.7A TO252
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IPD60R380E6ATMA2 IPD60R380E6ATMA2 Infineon Technologies Infineon--DS-v02_05-EN.pdf?fileId=db3a30433ea3aef6013eb24aa4521c2a Description: MOSFET N-CH 600V 10.6A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
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IPD60R800CEAUMA1 IPD60R800CEAUMA1 Infineon Technologies infineon-ipd60r800ce-datasheet-en.pdf Description: CONSUMER
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-TO252-3-344
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 373 pF @ 100 V
Produkt ist nicht verfügbar
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IPA126N10N3G IPA126N10N3G Infineon Technologies INFNS27818-1.pdf?t.download=true&u=5oefqw Description: 35A, 100V, 0.0126OHM, N-CHANNEL
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CHL8328-35CRT CHL8328-35CRT Infineon Technologies IR3536,38_CHL8326,28_v1.09_6-21-13.pdf Description: IC REG CTRLR DDR 2OUT 56VQFN
Produkt ist nicht verfügbar
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IAUC41N06S5L100ATMA1 IAUC41N06S5L100ATMA1 Infineon Technologies Infineon-IAUC41N06S5L100-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f920171f45f332861ae Description: MOSFET N-CH 60V 41A TDSON-8-33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tj)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 13µA
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Part Status: Active
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 30 V
Qualification: AEC-Q101
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5000+0.71 EUR
15000+0.64 EUR
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ICE5QR1680BGXUMA1 ICE5QR1680BGXUMA1 Infineon Technologies Infineon-ICE5QRxx80BG-DataSheet-v02_10-EN.pdf?fileId=5546d462700c0ae601707f2fe42513ad Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Active
Power (Watts): 50 W
Produkt ist nicht verfügbar
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ICE5QR1680BGXUMA1 ICE5QR1680BGXUMA1 Infineon Technologies Infineon-ICE5QRxx80BG-DataSheet-v02_10-EN.pdf?fileId=5546d462700c0ae601707f2fe42513ad Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Active
Power (Watts): 50 W
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IPC302N15N3X7SA1 Infineon Technologies dgdl?folderId=db3a30434422e00e01442b3248b750f0&fileId=db3a30434422e00e01442b691dc3512f Description: MV POWER MOS
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 150 V
Produkt ist nicht verfügbar
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FZ400R17KE3S4HOSA1 FZ400R17KE3S4HOSA1 Infineon Technologies Infineon-FZ400R17KE3-DS-v02_02-EN.pdf?fileId=db3a304412b407950112b43043334fd6 Description: IGBT MOD 1700V 620A 2250W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 620 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 2250 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 36 nF @ 25 V
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FS225R12KE4BOSA1 FS225R12KE4BOSA1 Infineon Technologies Infineon-FS225R12KE4-DS-v02_00-en_de.pdf?fileId=db3a30431689f4420116c9e1a17509c6 Description: IGBT MOD 1200V 320A 1100W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 225A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 320 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1100 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
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FD400R07PE4RB6BOSA1 Infineon Technologies Infineon-FD400R07PE4R_B6-DS-v03_00-en_de.pdf?fileId=db3a30433a047ba0013a6e432c415fb4 Description: IGBT MOD 650V 460A 1150W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 400A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 460 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1150 W
Current - Collector Cutoff (Max): 20 µA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
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IPA180N10N3G IPA180N10N3G Infineon Technologies INFNS27819-1.pdf?t.download=true&u=5oefqw Description: 28A, 100V, 0.018OHM, N-CHANNEL,
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 28A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 35µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
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IPDD60R145CFD7XTMA1 IPDD60R145CFD7XTMA1 Infineon Technologies infineon-ipdd60r145cfd7-datasheet-en.pdf Description: MOSFET N-CH 600V 24A HDSOP-10
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 6A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1199 pF @ 400 V
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TLE9862QXA40XUMA1 TLE9862QXA40XUMA1 Infineon Technologies Infineon-TLE9862QXA40-DataSheet-v01_00-EN.pdf?fileId=5546d46274f6cd4c0174fcecc8ed52a2 Description: EMBEDDED POWER
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LINbus, SPI, SSC, UART/USART
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 27V
Controller Series: TLE986x
Program Memory Type: FLASH (256kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-29
Grade: Automotive
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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100+6.81 EUR
250+6.49 EUR
500+6.28 EUR
1000+6.13 EUR
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IRFS33N15DTRLP IRFS33N15DTRLP Infineon Technologies irfs33n15d.pdf Description: MOSFET N-CH 150V 33A D2PAK
Produkt ist nicht verfügbar
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SP376251064XTMA1 Infineon Technologies Description: TIRE PRESSURE SENSOR
Packaging: Bulk
auf Bestellung 7000 Stücke:
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TT162N16KOFHPSA1 TT162N16KOFHPSA1 Infineon Technologies Infineon-TT162N-DS-v01_00-en_de.pdf?fileId=db3a304412b407950112b42f789a4bb5 Description: SCR MODULE 1.6KV 260A MODULE
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CY7C1248KV18-400BZXC CY7C1248KV18-400BZXC Infineon Technologies download Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
auf Bestellung 398 Stücke:
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CY7C1265KV18-450BZXC CY7C1265KV18-450BZXC Infineon Technologies download Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
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TLS850D0TAV50ATMA1 TLS850D0TAV50ATMA1 Infineon Technologies Infineon-TLS850D0TA-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc1015969edb50c4266 Description: IC REG LIN 5V 500MA PG-TO263-7-1
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 5 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-7-1
Voltage - Output (Min/Fixed): 5V
Control Features: Delay, Enable, Reset
Grade: Automotive
Part Status: Active
PSRR: 59dB (100Hz)
Voltage Dropout (Max): 0.425V @ 250mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 82 µA
Qualification: AEC-Q100
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IPB100N06S2L05ATMA2 IPB100N06S2L05ATMA2 Infineon Technologies fundamentals-of-power-semiconductors Description: MOSFET N-CH 55V 100A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5660 pF @ 25 V
Produkt ist nicht verfügbar
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FD1000R17IE4DB2BOSA1 FD1000R17IE4D_B2.pdf
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 1390A 6250W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1000A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 1390 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 6250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 81 nF @ 25 V
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IPI530N15N3GXKSA1 Infineon-IPD530N15N3-DS-v02_06-en.pdf?fileId=db3a30432662379201266a1f6dd2227c
IPI530N15N3GXKSA1
Hersteller: Infineon Technologies
Description: PFET, 21A I(D), 150V, 0.053OHM,
Produkt ist nicht verfügbar
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TT425N16KOFHPSA3 Infineon-TT425N-DS-v03_10-en_de.pdf?fileId=db3a304412b407950112b42f7bf84bc9
TT425N16KOFHPSA3
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 800A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 471 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 800 A
Voltage - Off State: 1.6 kV
Produkt ist nicht verfügbar
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DD600N16KAHPSA1 DD600N_Rev1_06-05-03.pdf
DD600N16KAHPSA1
Hersteller: Infineon Technologies
Description: DIODE MOD GP 1600V 600A BGPB60
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 600A
Supplier Device Package: BG-PB60-1
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 1800 A
Current - Reverse Leakage @ Vr: 40 mA @ 1600 V
Produkt ist nicht verfügbar
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TLE9250XLEXUMA1 Infineon-TLE9250X-DS-v01_00-EN.pdf?fileId=5546d4625debb399015e14b8cc665980
TLE9250XLEXUMA1
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER 1/1 PGTSON81
Packaging: Tape & Reel (TR)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-TSON-8-1
Receiver Hysteresis: 100 mV
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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5000+1.23 EUR
10000+1.2 EUR
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TLE9250XLEXUMA1 Infineon-TLE9250X-DS-v01_00-EN.pdf?fileId=5546d4625debb399015e14b8cc665980
TLE9250XLEXUMA1
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER 1/1 PGTSON81
Packaging: Cut Tape (CT)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-TSON-8-1
Receiver Hysteresis: 100 mV
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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9+2.56 EUR
12+1.86 EUR
25+1.69 EUR
100+1.5 EUR
250+1.4 EUR
500+1.34 EUR
1000+1.31 EUR
2500+1.26 EUR
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CY8C3666AXI-202 #!?fileId=8ac78c8c7d0d8da4017d0ec73d263e88
CY8C3666AXI-202
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 64KB FLASH 100TQFP
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CY8C20666AS-24LQXI infineon-ts2000-001-64564-software-module-datasheets-en.pdf?fileId=8ac78c8c7d0d8da4017d0fa2d0df1226&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all
CY8C20666AS-24LQXI
Hersteller: Infineon Technologies
Description: IC CAPSENSE 32KB FLASH 48QFN
Packaging: Tray
Package / Case: 48-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, USB
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (32kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 48-QFN (6x6)
Number of I/O: 36
DigiKey Programmable: Not Verified
auf Bestellung 9892 Stücke:
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8+2.83 EUR
10+2.38 EUR
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490+1.76 EUR
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TLI493DW2BWA3XTMA1 Infineon-TLI493D-W2BW-DataSheet-v01_00-EN.pdf?fileId=5546d46273a5366f0173b9bc938d2e1d
TLI493DW2BWA3XTMA1
Hersteller: Infineon Technologies
Description: SEN HALL EFFT OPEN DRAIN 5-WLCSP
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: 5-UFBGA, WLCSP
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 3.5V
Technology: Hall Effect
Sensing Range: ±160mT
Current - Supply (Max): 5mA
Supplier Device Package: 5-WLCSP (1.13x0.93)
Produkt ist nicht verfügbar
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TLI493DW2BWA0XTSA1 Infineon-TLI493D-W2BW-DataSheet-v01_00-EN.pdf?fileId=5546d46273a5366f0173b9bc938d2e1d
TLI493DW2BWA0XTSA1
Hersteller: Infineon Technologies
Description: SEN HALL EFFT OPEN DRAIN 5-WLCSP
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: 5-UFBGA, WLCSP
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 3.5V
Technology: Hall Effect
Sensing Range: ±160mT
Current - Supply (Max): 5mA
Supplier Device Package: 5-WLCSP (1.13x0.93)
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4000+1.43 EUR
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TLI493DW2BWA0XTMA1 Infineon-TLI493D-W2BW-DataSheet-v01_00-EN.pdf?fileId=5546d46273a5366f0173b9bc938d2e1d
TLI493DW2BWA0XTMA1
Hersteller: Infineon Technologies
Description: SEN HALL EFFT OPEN DRAIN 5-WLCSP
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: 5-UFBGA, WLCSP
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Programmable
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 3.5V
Technology: Hall Effect
Sensing Range: ±160mT
Current - Supply (Max): 5mA
Supplier Device Package: 5-WLCSP (1.13x0.93)
Test Condition: -40°C ~ 125°C
auf Bestellung 9965 Stücke:
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9+2.45 EUR
10+2.15 EUR
11+2.05 EUR
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100+1.75 EUR
500+1.59 EUR
1000+1.54 EUR
5000+1.42 EUR
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TLI493DW2BWA1XTMA1 Infineon-TLI493D-W2BW-DataSheet-v01_00-EN.pdf?fileId=5546d46273a5366f0173b9bc938d2e1d
TLI493DW2BWA1XTMA1
Hersteller: Infineon Technologies
Description: SEN HALL EFFT OPEN DRAIN 5-WLCSP
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: 5-UFBGA, WLCSP
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Programmable
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 3.5V
Technology: Hall Effect
Sensing Range: ±160mT
Current - Supply (Max): 5mA
Supplier Device Package: 5-WLCSP (1.13x0.93)
Test Condition: -40°C ~ 125°C
Produkt ist nicht verfügbar
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CY24293ZXCT download
CY24293ZXCT
Hersteller: Infineon Technologies
Description: IC CLK BUFFER 2PR 3.3V 16-TSSOP
auf Bestellung 1 Stücke:
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BC857B E6327 INFNS16508-1.pdf?t.download=true&u=5oefqw
BC857B E6327
Hersteller: Infineon Technologies
Description: TRANS PNP 45V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
auf Bestellung 303389 Stücke:
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7818+0.076 EUR
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BCR119WE6327 Infineon-BCR119SERIES-DS-v01_01-en.pdf?fileId=db3a30431428a37301143f643b380286
BCR119WE6327
Hersteller: Infineon Technologies
Description: TRANS PREBIAS
Packaging: Bulk
auf Bestellung 123000 Stücke:
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10764+0.054 EUR
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BCR119WH6327 INFNS17179-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 4.7 kOhms
Produkt ist nicht verfügbar
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BCR191E6327 INFNS11718-1.pdf?t.download=true&u=5oefqw
BCR191E6327
Hersteller: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Supplier Device Package: PG-SOT23-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
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8013+0.079 EUR
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TUA 6036 T TUA6034_36_v251_110106.pdf
TUA 6036 T
Hersteller: Infineon Technologies
Description: IC VIDEO TUNER 38TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Tuner
Voltage - Supply: 4.5V ~ 5.5V
Applications: Consumer Video
Standards: NTSC, PAL
Supplier Device Package: PG-TSSOP-38
Control Interface: I2C
Produkt ist nicht verfügbar
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D850N36TXPSA1 Infineon-D850N-DS-v03_00-en_de.pdf?fileId=db3a304323b87bc201240a18c6d04782
D850N36TXPSA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 3.6KV 850A
Packaging: Bulk
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 850A
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 3600 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 850 A
Current - Reverse Leakage @ Vr: 50 mA @ 3600 V
Produkt ist nicht verfügbar
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D740N36TXPSA1 D740N.pdf
D740N36TXPSA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 3.6KV 750A
Produkt ist nicht verfügbar
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D270N36TXPSA1 D270N.pdf
D270N36TXPSA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 3.6KV 270A
Packaging: Bulk
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 270A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 3600 V
Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 250 A
Current - Reverse Leakage @ Vr: 20 mA @ 3600 V
Produkt ist nicht verfügbar
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ASP1212-N20NT ASP1212_V1.06_12-16-12.pdf
ASP1212-N20NT
Hersteller: Infineon Technologies
Description: IC REG CTRLR VR11 1OUT 56VQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3.3V
Operating Temperature: 0°C ~ 85°C (TA)
Applications: Controller, Intel VR11, VR11.1, AMD CPU
Supplier Device Package: PG-VQFN-56-901
Produkt ist nicht verfügbar
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ASP1212-N50NT ASP1212_V1.06_12-16-12.pdf
Hersteller: Infineon Technologies
Description: IC REGULATOR PG-VQFN-56-901
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3.3V
Operating Temperature: 0°C ~ 85°C (TA)
Applications: Controller, Intel VR11, VR11.1, AMD CPU
Supplier Device Package: 56-VQFN (8x8)
Part Status: Obsolete
Produkt ist nicht verfügbar
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ASP1212-N60DT
Hersteller: Infineon Technologies
Description: IC REGULATOR PG-VQFN-56-901
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3.3V
Operating Temperature: 0°C ~ 85°C (TA)
Applications: Controller, Intel VR11, VR11.1, AMD CPU
Supplier Device Package: 56-VQFN (8x8)
Part Status: Obsolete
Produkt ist nicht verfügbar
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ASP1212-N60NT ASP1212_V1.06_12-16-12.pdf
ASP1212-N60NT
Hersteller: Infineon Technologies
Description: IC REG CTRLR VR11 1OUT 56VQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3.3V
Operating Temperature: 0°C ~ 85°C (TA)
Applications: Controller, Intel VR11, VR11.1, AMD CPU
Supplier Device Package: PG-VQFN-56-901
Produkt ist nicht verfügbar
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BAR88-02LRHE6327 INFNS15409-1.pdf?t.download=true&u=5oefqw
BAR88-02LRHE6327
Hersteller: Infineon Technologies
Description: PIN DIODE, 80V V(BR)
Produkt ist nicht verfügbar
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2ED2101S06FXUMA1 Infineon-2ED2101S06F-DataSheet-v02_03-EN.pdf?fileId=5546d462766a0c1701766abe07220167
2ED2101S06FXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-69
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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2ED2101S06FXUMA1 Infineon-2ED2101S06F-DataSheet-v02_03-EN.pdf?fileId=5546d462766a0c1701766abe07220167
2ED2101S06FXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-69
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 2238 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.15 EUR
14+1.56 EUR
25+1.4 EUR
100+1.25 EUR
250+1.17 EUR
500+1.12 EUR
1000+1.08 EUR
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S25FS064SAGMFN010 Infineon-S25FS064S_64_Mbit_(8_Mbyte)_1.8-V_FS-S_Flash_Memory-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed526b25412&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FS064SAGMFN010
Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 8M x 8
DigiKey Programmable: Verified
auf Bestellung 219 Stücke:
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129+4.88 EUR
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S25FL116K0XMFN013 S25FL116K_132K_164K__RevH_5-19-17.pdf
S25FL116K0XMFN013
Hersteller: Infineon Technologies
Description: IC FLASH 16MBIT SPI/QUAD 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25FL116K0XMFN010 S25FL116K0XMFN010_Web.pdf
S25FL116K0XMFN010
Hersteller: Infineon Technologies
Description: IC FLASH 16MBIT SPI/QUAD 8SOIC
Packaging: Tray
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25FL116K0XMFN011 S25FL116K0XMFN011_Web.pdf
S25FL116K0XMFN011
Hersteller: Infineon Technologies
Description: IC FLASH 16MBIT SPI/QUAD 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ILD1151 INFNS19025-1.pdf?t.download=true&u=5oefqw
ILD1151
Hersteller: Infineon Technologies
Description: ILD1151 - LED DRIVER & ACTIVE BI
Packaging: Bulk
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 100kHz ~ 500kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Lighting
Current - Output / Channel: 550mA
Internal Switch(s): No
Topology: Flyback, SEPIC, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: PG-SSOP-14-1
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 45V
Part Status: Active
auf Bestellung 16296 Stücke:
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218+2.74 EUR
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PX8244HDMG008XTMA1 Orderable_Part_Number_OPN_Translation_Table_Web.pdf
Hersteller: Infineon Technologies
Description: LED PX8244HDMG008XTMA1
Packaging: Bulk
auf Bestellung 8000 Stücke:
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AnzahlPrivatkunde
64+9.39 EUR
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IPP90R500C3 IPP90R500C3_Rev1.0_7-29-08.pdf
IPP90R500C3
Hersteller: Infineon Technologies
Description: MOSFET N-CH 900V 11A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 740µA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 100 V
Produkt ist nicht verfügbar
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IPB60R070CFD7ATMA1 Infineon-IPB60R070CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626b2d8e69016bb22a2b8c183d
IPB60R070CFD7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 31A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 15.1A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 760µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2721 pF @ 400 V
auf Bestellung 1712 Stücke:
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2+13.61 EUR
10+9.19 EUR
50+7.28 EUR
100+6.68 EUR
500+6.37 EUR
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IPB60R040CFD7ATMA1 infineon-ipb60r040cfd7-datasheet-en.pdf
IPB60R040CFD7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 50A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.9A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.25mA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4351 pF @ 400 V
auf Bestellung 4000 Stücke:
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1000+7.64 EUR
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IPB60R040CFD7ATMA1 infineon-ipb60r040cfd7-datasheet-en.pdf
IPB60R040CFD7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 50A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.9A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.25mA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4351 pF @ 400 V
auf Bestellung 4273 Stücke:
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2+18.27 EUR
10+12.51 EUR
50+10.04 EUR
100+9.35 EUR
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IPD60R750E6BTMA1 Infineon-IPD60R750E6-DS-v02_02-EN.pdf?fileId=db3a30432a14dd54012a194f52852b08
IPD60R750E6BTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 5.7A TO252
auf Bestellung 36500 Stücke:
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IPD60R380E6ATMA2 Infineon--DS-v02_05-EN.pdf?fileId=db3a30433ea3aef6013eb24aa4521c2a
IPD60R380E6ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 10.6A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
auf Bestellung 6650 Stücke:
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315+1.84 EUR
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IPD60R800CEAUMA1 infineon-ipd60r800ce-datasheet-en.pdf
IPD60R800CEAUMA1
Hersteller: Infineon Technologies
Description: CONSUMER
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-TO252-3-344
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 373 pF @ 100 V
Produkt ist nicht verfügbar
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IPA126N10N3G INFNS27818-1.pdf?t.download=true&u=5oefqw
IPA126N10N3G
Hersteller: Infineon Technologies
Description: 35A, 100V, 0.0126OHM, N-CHANNEL
auf Bestellung 1450 Stücke:
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399+1.44 EUR
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CHL8328-35CRT IR3536,38_CHL8326,28_v1.09_6-21-13.pdf
CHL8328-35CRT
Hersteller: Infineon Technologies
Description: IC REG CTRLR DDR 2OUT 56VQFN
Produkt ist nicht verfügbar
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IAUC41N06S5L100ATMA1 Infineon-IAUC41N06S5L100-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f920171f45f332861ae
IAUC41N06S5L100ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 41A TDSON-8-33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tj)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 13µA
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Part Status: Active
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 19997 Stücke:
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AnzahlPrivatkunde
5000+0.71 EUR
15000+0.64 EUR
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ICE5QR1680BGXUMA1 Infineon-ICE5QRxx80BG-DataSheet-v02_10-EN.pdf?fileId=5546d462700c0ae601707f2fe42513ad
ICE5QR1680BGXUMA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Active
Power (Watts): 50 W
Produkt ist nicht verfügbar
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ICE5QR1680BGXUMA1 Infineon-ICE5QRxx80BG-DataSheet-v02_10-EN.pdf?fileId=5546d462700c0ae601707f2fe42513ad
ICE5QR1680BGXUMA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Active
Power (Watts): 50 W
auf Bestellung 101 Stücke:
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5+4.24 EUR
10+3.14 EUR
25+2.87 EUR
100+2.56 EUR
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IPC302N15N3X7SA1 dgdl?folderId=db3a30434422e00e01442b3248b750f0&fileId=db3a30434422e00e01442b691dc3512f
Hersteller: Infineon Technologies
Description: MV POWER MOS
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 150 V
Produkt ist nicht verfügbar
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FZ400R17KE3S4HOSA1 Infineon-FZ400R17KE3-DS-v02_02-EN.pdf?fileId=db3a304412b407950112b43043334fd6
FZ400R17KE3S4HOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 620A 2250W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 620 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 2250 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 36 nF @ 25 V
auf Bestellung 363 Stücke:
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3+234.3 EUR
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FS225R12KE4BOSA1 Infineon-FS225R12KE4-DS-v02_00-en_de.pdf?fileId=db3a30431689f4420116c9e1a17509c6
FS225R12KE4BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 320A 1100W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 225A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 320 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1100 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
auf Bestellung 1561 Stücke:
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1+688.56 EUR
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FD400R07PE4RB6BOSA1 Infineon-FD400R07PE4R_B6-DS-v03_00-en_de.pdf?fileId=db3a30433a047ba0013a6e432c415fb4
Hersteller: Infineon Technologies
Description: IGBT MOD 650V 460A 1150W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 400A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 460 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1150 W
Current - Collector Cutoff (Max): 20 µA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
auf Bestellung 267 Stücke:
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AnzahlPrivatkunde
2+301.64 EUR
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IPA180N10N3G INFNS27819-1.pdf?t.download=true&u=5oefqw
IPA180N10N3G
Hersteller: Infineon Technologies
Description: 28A, 100V, 0.018OHM, N-CHANNEL,
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 28A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 35µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
400+1.49 EUR
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IPDD60R145CFD7XTMA1 infineon-ipdd60r145cfd7-datasheet-en.pdf
IPDD60R145CFD7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 24A HDSOP-10
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 6A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1199 pF @ 400 V
auf Bestellung 1796 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.07 EUR
10+5.3 EUR
50+4.11 EUR
100+3.72 EUR
500+3.14 EUR
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TLE9862QXA40XUMA1 Infineon-TLE9862QXA40-DataSheet-v01_00-EN.pdf?fileId=5546d46274f6cd4c0174fcecc8ed52a2
TLE9862QXA40XUMA1
Hersteller: Infineon Technologies
Description: EMBEDDED POWER
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LINbus, SPI, SSC, UART/USART
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 27V
Controller Series: TLE986x
Program Memory Type: FLASH (256kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-29
Grade: Automotive
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
auf Bestellung 4895 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+10.58 EUR
10+8.1 EUR
25+7.49 EUR
100+6.81 EUR
250+6.49 EUR
500+6.28 EUR
1000+6.13 EUR
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IRFS33N15DTRLP irfs33n15d.pdf
IRFS33N15DTRLP
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 33A D2PAK
Produkt ist nicht verfügbar
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SP376251064XTMA1
Hersteller: Infineon Technologies
Description: TIRE PRESSURE SENSOR
Packaging: Bulk
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
100+5.52 EUR
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TT162N16KOFHPSA1 Infineon-TT162N-DS-v01_00-en_de.pdf?fileId=db3a304412b407950112b42f789a4bb5
TT162N16KOFHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 260A MODULE
Produkt ist nicht verfügbar
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CY7C1248KV18-400BZXC download
CY7C1248KV18-400BZXC
Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
auf Bestellung 398 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+39.29 EUR
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CY7C1265KV18-450BZXC download
CY7C1265KV18-450BZXC
Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
auf Bestellung 172 Stücke:
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1+45.09 EUR
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TLS850D0TAV50ATMA1 Infineon-TLS850D0TA-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc1015969edb50c4266
TLS850D0TAV50ATMA1
Hersteller: Infineon Technologies
Description: IC REG LIN 5V 500MA PG-TO263-7-1
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 5 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-7-1
Voltage - Output (Min/Fixed): 5V
Control Features: Delay, Enable, Reset
Grade: Automotive
Part Status: Active
PSRR: 59dB (100Hz)
Voltage Dropout (Max): 0.425V @ 250mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 82 µA
Qualification: AEC-Q100
auf Bestellung 234 Stücke:
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4+5.74 EUR
10+4.3 EUR
25+3.94 EUR
100+3.55 EUR
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IPB100N06S2L05ATMA2 fundamentals-of-power-semiconductors
IPB100N06S2L05ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 100A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5660 pF @ 25 V
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