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IKP15N65F5 IKP15N65F5 Infineon Technologies Part_Number_Guide_Web.pdf Description: IGBT 650V 30A 105W PG-TO220-3
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AIGB15N65F5ATMA1 AIGB15N65F5ATMA1 Infineon Technologies Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4 Description: IGBT NPT 650V 15A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 650 V
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IRFCZ44VB Infineon Technologies Description: MOSFET 60V 55A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 55A
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 55A, 10V
Supplier Device Package: Die
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 60 V
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IRFI4020H-117PXKMA1 IRFI4020H-117PXKMA1 Infineon Technologies irfi4020h-117p.pdf?fileId=5546d462533600a401535623e7271f73 Description: MOSFET 2N-CH 200V 9.1A TO220-5
Packaging: Tube
Package / Case: TO-220-5 Full Pack, Formed Leads
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 21W (Tc)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 9.1A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 25V
Rds On (Max) @ Id, Vgs: 100mOhm @ 5.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: TO-220-5 Full-Pak
Part Status: Active
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BSM200GB120DN2S7HOSA1 Infineon Technologies Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Part Status: Active
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BSO203PH BSO203PH Infineon Technologies INFNS15552-1.pdf?t.download=true&u=5oefqw Description: BSO203 - 20V-250V P-CHANNEL POWE
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S6E1C12C0AGN20000 S6E1C12C0AGN20000 Infineon Technologies Infineon-S6E1C32D0AGN20050-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c81ae03fc0181ec33e75c2c49 Description: IC MCU 32BIT 128KB FLASH 48QFN
Packaging: Tray
Package / Case: 48-WFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 8x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I²C, LINbus, SmartCard, UART/USART
Peripherals: I²S, LVD, POR, PWM, WDT
Supplier Device Package: 48-QFN (7x7)
Part Status: Active
Number of I/O: 38
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BCR158WH6327 Infineon Technologies INFNS17185-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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BCR158E6327 BCR158E6327 Infineon Technologies INFNS11628-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT23-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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BCR158WE6327 BCR158WE6327 Infineon Technologies INFNS11628-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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BCR158 BCR158 Infineon Technologies INFNS17185-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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BCR158W Infineon Technologies INFNS17185-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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TDSTD6895 TDSTD6895 Infineon Technologies Infineon-BCR158SERIES-DS-v01_01-en.pdf?fileId=db3a30431428a37301144022a59b02cc Description: BCR158 - DIGITAL TRANSISTOR
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
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CY62167GN30-45BVXI CY62167GN30-45BVXI Infineon Technologies Infineon-CY62167GN30_MOBL_16_MBIT_(1M_X_16_2M_X_8)_STATIC_RAM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9fe9b72e1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Bulk
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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ESD144B1W0201E6327XTSA1 ESD144B1W0201E6327XTSA1 Infineon Technologies Infineon-New+generation+ESD+protection+diodes-PB-v01_00-EN.pdf?fileId=5546d4625cc9456a015d0ccb7b9a57e3 Description: TVS DIODE 18VWM 20VC WLL-2-2
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: WLL-2-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 18.5V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 21W
Power Line Protection: Yes
Part Status: Active
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ESD233B1W0201E6327XTSA1 ESD233B1W0201E6327XTSA1 Infineon Technologies Infineon-ESD233-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d4625cc9456a015ce93607634882 Description: TVS DIODE 5.5VWM 13VC WLL-2-1
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: General Amplification
Capacitance @ Frequency: 33pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V
Supplier Device Package: SG-WLL-2-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.5V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 70W
Power Line Protection: No
Part Status: Active
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135+0.13 EUR
500+0.10 EUR
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IDW16G65C5FKSA1 IDW16G65C5FKSA1 Infineon Technologies IDW16G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a30431d8a6b3c011dbeca72db281a&fileId=db3a30433899edae0138a478b3db208c Description: DIODE SCHOTTKY 650V 16A TO247-3
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IPP60R180P7 IPP60R180P7 Infineon Technologies Infineon-IPP60R180P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5bdc7fff3cbb Description: IPP60R180 - 600V COOLMOS N-CHANN
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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BTT3018EJXUMA1 BTT3018EJXUMA1 Infineon Technologies Infineon-BTT3018EJ-DataSheet-v01_00-EN.pdf?fileId=5546d4626fc1ce0b016ff157937b4290 Description: BTT3018EJXUMA1
Features: Slew Rate Controlled, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 16mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 36V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-8-31
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Grade: Automotive
Part Status: Active
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XDPL8219XUMA1 Infineon Technologies Infineon-XDPL8219-DataSheet-v01_01-EN.pdf?fileId=5546d46272aa54c00172c1d42f3c599b Description: IC LED DRVR CTRLR NO 100MA 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 15MHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 85°C (TA)
Applications: LED Lighting
Current - Output / Channel: 100mA
Internal Switch(s): Yes
Topology: Flyback
Supplier Device Package: PG-DSO-8-41
Dimming: No
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 24V
Part Status: Active
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100+1.80 EUR
250+1.69 EUR
500+1.48 EUR
1000+1.23 EUR
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TDK5116FHTMA1 TDK5116FHTMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: RF TX IC ASK 866-870MHZ 10TFSOP
Packaging: Cut Tape (CT)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Frequency: 866MHz ~ 870MHz
Modulation or Protocol: ASK, FSK
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.1V ~ 4V
Power - Output: 11.5dBm
Applications: Alarm Systems, Communication Systems
Data Rate (Max): 20kbps
Current - Transmitting: 16mA
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-10-2
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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FS200R07N3E4R_B11 Infineon Technologies INFNS28543-1.pdf?t.download=true&u=5oefqw Description: FS200R07 - IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
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FS200R12PT4 Infineon Technologies INFNS28547-1.pdf?t.download=true&u=5oefqw Description: INSULATED GATE BIPOLAR TRANSISTO
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BSC079N10NSGATMA1 BSC079N10NSGATMA1 Infineon Technologies BSC079N10NS+Rev1.03.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a3043163797a601167b174f951147 Description: MOSFET N-CH 100V 13.4A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 50A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 110µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 50 V
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500+1.89 EUR
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TLE5027CXAAD47AIHAMA1 TLE5027CXAAD47AIHAMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: SENSOR MAGNETORESISTIVE PWM 3SIP
Packaging: Bulk
Package / Case: 3-SSIP Module
Output Type: PWM
Mounting Type: Through Hole
Axis: X, Y, Z
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Magnetoresistive
Supplier Device Package: PG-SSO-3-92
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q100
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TLE5027CXAAD47AGXAMA1 TLE5027CXAAD47AGXAMA1 Infineon Technologies Description: SENSOR MAGNETORESISTIVE PWM 3SIP
Packaging: Bulk
Package / Case: 3-SSIP Module
Output Type: PWM
Mounting Type: Through Hole
Axis: X, Y, Z
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Magnetoresistive
Supplier Device Package: PG-SSO-3-92
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q100
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135+3.45 EUR
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TLE5009A16E1200XUMA1 TLE5009A16E1200XUMA1 Infineon Technologies Infineon-TLE5x09A16_D-DS-v02_00-EN.pdf?fileId=5546d462696dbf12016977889fe858c9 Description: IC HALL SENSOR LINEAR TDSO-16
Packaging: Bulk
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 125°C
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 3.6V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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130+3.57 EUR
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TLE5009A16E2200XUMA1 Infineon Technologies Infineon-TLE5x09A16_D-DS-v02_00-EN.pdf?fileId=5546d462696dbf12016977889fe858c9 Description: IC HALL SENSOR LINEAR TDSO-16
Packaging: Bulk
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 125°C
Termination Style: Gull Wing
Voltage - Supply: 4.5V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Active
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135+3.92 EUR
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TLE5025CE6747HAMA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: MAG SWITCH SPEED SENSOR 3SSO
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150+3.36 EUR
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TLE5027CIE6747HAMA1 TLE5027CIE6747HAMA1 Infineon Technologies TLE5027C_PB_7-2-13.pdf Description: SENSOR MAGNETORESISTIVE PWM 3SIP
Packaging: Bulk
Package / Case: 3-SSIP Module
Output Type: PWM
Mounting Type: Through Hole
Axis: X, Y, Z
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Magnetoresistive
Supplier Device Package: PG-SSO-3-92
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q100
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137+3.39 EUR
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TLE5009A16E2210XUMA1 TLE5009A16E2210XUMA1 Infineon Technologies Infineon-TLE5x09A16_D-DS-v02_00-EN.pdf?fileId=5546d462696dbf12016977889fe858c9 Description: IC HALL SENSOR LINEAR TDSO-16
Packaging: Bulk
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 125°C
Termination Style: Gull Wing
Voltage - Supply: 4.5V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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BTS736L2NTMA1 Infineon Technologies INFNS05478-1.pdf?t.download=true&u=5oefqw Description: BUFFER/INVERTER BASED PERIPHERAL
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TLE4274GV50ATMA1 TLE4274GV50ATMA1 Infineon Technologies INFNS16630-1.pdf?t.download=true&u=5oefqw Description: IC REG LINEAR FIXED LDO REG
Packaging: Bulk
Package / Case: TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-3-1
Voltage - Output (Min/Fixed): 5V
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
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TLE4274GV50ATMA2 TLE4274GV50ATMA2 Infineon Technologies Infineon-TLE4274-DS-v01_70-EN.pdf?fileId=5546d46258fc0bc101595f8e637f1f8f Description: IC REG LIN 5V 400MA PG-TO263-3-1
Packaging: Cut Tape (CT)
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-3-1
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Grade: Automotive
Qualification: AEC-Q100
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100+1.84 EUR
250+1.74 EUR
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CY7C4235V-15ASXC CY7C4235V-15ASXC Infineon Technologies CY7C4205V%2C15V%2C25V%2C35V%2C45V%2C4425V.pdf Description: IC FIFO SYNC 2KX18 11NS 64TQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 36K (2K x 18)
Operating Temperature: 0°C ~ 70°C
Data Rate: 66.7MHz
Access Time: 11ns
Current - Supply (Max): 30mA
Supplier Device Package: 64-TQFP (14x14)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: Yes
Retransmit Capability: Yes
FWFT Support: No
Part Status: Obsolete
Voltage - Supply: 3 V ~ 3.6 V
DigiKey Programmable: Not Verified
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IPD14N06S2-80 Infineon Technologies INFNS09524-1.pdf?t.download=true&u=5oefqw Description: IPD14N06 - 55V-60V N-CHANNEL AUT
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 7A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 4V @ 14µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 293 pF @ 25 V
Produkt ist nicht verfügbar
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CY7C1041CV33-10BAJXE CY7C1041CV33-10BAJXE Infineon Technologies Infineon-CY7C1041CV33_Automotive_4-Mbit_(256_K_16)_Static_RAM-AdditionalTechnicalInformation-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecab2cc43b0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integr Description: IC SRAM 4MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-FBGA (7x8.5)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
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CY7C1041CV33-10BAJXET CY7C1041CV33-10BAJXET Infineon Technologies Infineon-CY7C1041CV33_Automotive_4-Mbit_(256_K_16)_Static_RAM-AdditionalTechnicalInformation-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecab2cc43b0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integr Description: IC SRAM 4MBIT PARALLEL 48FBGA
Packaging: Cut Tape (CT)
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-FBGA (7x8.5)
Part Status: Discontinued at Digi-Key
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
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IPA60R125P6 IPA60R125P6 Infineon Technologies Infineon-IPX60R125P6-DS-v02_00-en[1].pdf?fileId=5546d461464245d301468af2915b667f Description: POWER FIELD-EFFECT TRANSISTOR
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 11.6A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 960µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 100 V
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IPB60R600CP IPB60R600CP Infineon Technologies INFNS11341-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 100 V
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IPB60R520CP IPB60R520CP Infineon Technologies INFNS11337-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 100 V
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IPB60R250CPATMA1 IPB60R250CPATMA1 Infineon Technologies IPB60R250CP_rev2.1.pdf?folderId=db3a30431ff98815012019af55de3f2c&fileId=db3a304320896aa201208b2fd3ce0087 Description: MOSFET N-CH 600V 12A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V
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IPB60R250CP IPB60R250CP Infineon Technologies INFNS17419-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 520µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V
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BG3130RH6327XTSA1 BG3130RH6327XTSA1 Infineon Technologies BG3130.pdf Description: RF MOSFET 5V SOT363
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Current Rating (Amps): 25mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: 2 N-Channel (Dual)
Gain: 24dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.3dB
Supplier Device Package: PG-SOT363-PO
Part Status: Obsolete
Voltage - Rated: 8 V
Voltage - Test: 5 V
Current - Test: 14 mA
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BTS240AHKSA1 Infineon Technologies INFNS15457-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 47A, 10V
Power Dissipation (Max): 170W
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: PG-TO218-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V
Qualification: AEC-Q101
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IPP120N06S4H1AKSA2 IPP120N06S4H1AKSA2 Infineon Technologies IPx120N06S4-H1.pdf Description: MOSFET N-CH 60V 120A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21900 pF @ 25 V
Qualification: AEC-Q101
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IPI120N06S402AKSA2 IPI120N06S402AKSA2 Infineon Technologies IPx120N06S4-02.pdf Description: MOSFET N-CH 60V 120A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO262-3-1
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
Qualification: AEC-Q101
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IPB120N06S4H1ATMA2 IPB120N06S4H1ATMA2 Infineon Technologies Infineon-I120N06S4_H1-DS-v01_00-en.pdf?fileId=db3a30431ff988150120388c9cf60caf Description: MOSFET N-CH 60V 120A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21900 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUC120N06S5N017ATMA1 IAUC120N06S5N017ATMA1 Infineon Technologies Infineon-IAUC120N06S5N017-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f920171f48ce58a61bc Description: MOSFET N-CH 60V 120A TDSON-8-43
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 60A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 94µA
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6952 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUC120N06S5N017ATMA1 IAUC120N06S5N017ATMA1 Infineon Technologies Infineon-IAUC120N06S5N017-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f920171f48ce58a61bc Description: MOSFET N-CH 60V 120A TDSON-8-43
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 60A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 94µA
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6952 pF @ 30 V
Qualification: AEC-Q101
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10+2.51 EUR
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EVALIMOTION2GOTOBO1 EVALIMOTION2GOTOBO1 Infineon Technologies Infineon-EVAL-iMOTION2GO-UserManual-v01_01-EN.pdf?fileId=5546d462719b59230171abbcc2b4481b Description: EVAL BOARD FOR IMC101T
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: IMC101T
Supplied Contents: Board(s)
Primary Attributes: Motors (BLDC)
Part Status: Active
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IRFH7440TRPBFTR Infineon Technologies irfh7440pbf.pdf?fileId=5546d462533600a40153561f0e821eed Description: IRFH7440 - 12V-300V N-CHANNEL PO
Produkt ist nicht verfügbar
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SAB-C161PI-LM3V SAB-C161PI-LM3V Infineon Technologies INFNS00746-1.pdf?t.download=true&u=5oefqw Description: SAB-C161PI-LF 3V CA - LEGACY 16-
Packaging: Bulk
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 3K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 4x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: EBI/EMI, I²C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-100-2
Part Status: Active
Number of I/O: 76
DigiKey Programmable: Not Verified
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SAB-C161O-L25M SAB-C161O-L25M Infineon Technologies INFNS01615-1.pdf?t.download=true&u=5oefqw Description: SAB-C161O-L25M HA - LEGACY 16-BI
Packaging: Bulk
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 25MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-80-1
Part Status: Active
Number of I/O: 63
DigiKey Programmable: Not Verified
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28+18.51 EUR
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SPD03N60S5XT Infineon Technologies Infineon-SPD_U03N60S5-DS-v02_05-en1.pdf?t.download=true&u=5oefqw Description: SPD03N60 - 600V COOLMOS N-CHANNE
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 135µA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
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PSB21653EV1.4-G Infineon Technologies Description: INCA -IP2 SINGLE-CHIP IP PHONE W
Packaging: Bulk
Part Status: Active
auf Bestellung 429 Stücke:
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IRFR9N20DTR IRFR9N20DTR Infineon Technologies irfr9n20dpbf.pdf?fileId=5546d462533600a40153563610b1213b Description: MOSFET N-CH 200V 9.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.6A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V
Produkt ist nicht verfügbar
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IRFR9N20DTRL IRFR9N20DTRL Infineon Technologies irfr9n20dpbf.pdf?fileId=5546d462533600a40153563610b1213b Description: MOSFET N-CH 200V 9.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.6A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V
Produkt ist nicht verfügbar
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IRFR9N20DTRR IRFR9N20DTRR Infineon Technologies irfr9n20dpbf.pdf?fileId=5546d462533600a40153563610b1213b Description: MOSFET N-CH 200V 9.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.6A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: D-Pak
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V
Produkt ist nicht verfügbar
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IRFR9N20DPBF IRFR9N20DPBF Infineon Technologies irfr9n20dpbf.pdf?fileId=5546d462533600a40153563610b1213b description Description: MOSFET N-CH 200V 9.4A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.6A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V
Produkt ist nicht verfügbar
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IKP15N65F5 Part_Number_Guide_Web.pdf
IKP15N65F5
Hersteller: Infineon Technologies
Description: IGBT 650V 30A 105W PG-TO220-3
Produkt ist nicht verfügbar
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AIGB15N65F5ATMA1 Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4
AIGB15N65F5ATMA1
Hersteller: Infineon Technologies
Description: IGBT NPT 650V 15A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Produkt ist nicht verfügbar
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IRFCZ44VB
Hersteller: Infineon Technologies
Description: MOSFET 60V 55A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 55A
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 55A, 10V
Supplier Device Package: Die
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 60 V
Produkt ist nicht verfügbar
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IRFI4020H-117PXKMA1 irfi4020h-117p.pdf?fileId=5546d462533600a401535623e7271f73
IRFI4020H-117PXKMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 200V 9.1A TO220-5
Packaging: Tube
Package / Case: TO-220-5 Full Pack, Formed Leads
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 21W (Tc)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 9.1A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 25V
Rds On (Max) @ Id, Vgs: 100mOhm @ 5.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: TO-220-5 Full-Pak
Part Status: Active
auf Bestellung 950 Stücke:
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3+6.18 EUR
50+3.09 EUR
100+2.96 EUR
500+2.43 EUR
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BSM200GB120DN2S7HOSA1
Hersteller: Infineon Technologies
Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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BSO203PH INFNS15552-1.pdf?t.download=true&u=5oefqw
BSO203PH
Hersteller: Infineon Technologies
Description: BSO203 - 20V-250V P-CHANNEL POWE
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490+0.98 EUR
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S6E1C12C0AGN20000 Infineon-S6E1C32D0AGN20050-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c81ae03fc0181ec33e75c2c49
S6E1C12C0AGN20000
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 48QFN
Packaging: Tray
Package / Case: 48-WFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 8x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I²C, LINbus, SmartCard, UART/USART
Peripherals: I²S, LVD, POR, PWM, WDT
Supplier Device Package: 48-QFN (7x7)
Part Status: Active
Number of I/O: 38
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BCR158WH6327 INFNS17185-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
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BCR158E6327 INFNS11628-1.pdf?t.download=true&u=5oefqw
BCR158E6327
Hersteller: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT23-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
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BCR158WE6327 INFNS11628-1.pdf?t.download=true&u=5oefqw
BCR158WE6327
Hersteller: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
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BCR158 INFNS17185-1.pdf?t.download=true&u=5oefqw
BCR158
Hersteller: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
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BCR158W INFNS17185-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
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TDSTD6895 Infineon-BCR158SERIES-DS-v01_01-en.pdf?fileId=db3a30431428a37301144022a59b02cc
TDSTD6895
Hersteller: Infineon Technologies
Description: BCR158 - DIGITAL TRANSISTOR
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY62167GN30-45BVXI Infineon-CY62167GN30_MOBL_16_MBIT_(1M_X_16_2M_X_8)_STATIC_RAM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9fe9b72e1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY62167GN30-45BVXI
Hersteller: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Bulk
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
auf Bestellung 220 Stücke:
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Anzahl Preis
19+25.82 EUR
Mindestbestellmenge: 19
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ESD144B1W0201E6327XTSA1 Infineon-New+generation+ESD+protection+diodes-PB-v01_00-EN.pdf?fileId=5546d4625cc9456a015d0ccb7b9a57e3
ESD144B1W0201E6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 18VWM 20VC WLL-2-2
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: WLL-2-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 18.5V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 21W
Power Line Protection: Yes
Part Status: Active
auf Bestellung 141819 Stücke:
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Anzahl Preis
84+0.21 EUR
117+0.15 EUR
285+0.06 EUR
500+0.06 EUR
1000+0.05 EUR
2000+0.05 EUR
5000+0.05 EUR
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ESD233B1W0201E6327XTSA1 Infineon-ESD233-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d4625cc9456a015ce93607634882
ESD233B1W0201E6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 5.5VWM 13VC WLL-2-1
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: General Amplification
Capacitance @ Frequency: 33pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V
Supplier Device Package: SG-WLL-2-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.5V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 70W
Power Line Protection: No
Part Status: Active
auf Bestellung 2391 Stücke:
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Anzahl Preis
50+0.35 EUR
73+0.24 EUR
135+0.13 EUR
500+0.10 EUR
1000+0.07 EUR
2000+0.06 EUR
Mindestbestellmenge: 50
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IDW16G65C5FKSA1 IDW16G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a30431d8a6b3c011dbeca72db281a&fileId=db3a30433899edae0138a478b3db208c
IDW16G65C5FKSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 650V 16A TO247-3
Produkt ist nicht verfügbar
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IPP60R180P7 Infineon-IPP60R180P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5bdc7fff3cbb
IPP60R180P7
Hersteller: Infineon Technologies
Description: IPP60R180 - 600V COOLMOS N-CHANN
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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BTT3018EJXUMA1 Infineon-BTT3018EJ-DataSheet-v01_00-EN.pdf?fileId=5546d4626fc1ce0b016ff157937b4290
BTT3018EJXUMA1
Hersteller: Infineon Technologies
Description: BTT3018EJXUMA1
Features: Slew Rate Controlled, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 16mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 36V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-8-31
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Grade: Automotive
Part Status: Active
auf Bestellung 3544 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.30 EUR
10+4.13 EUR
100+2.90 EUR
500+2.59 EUR
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XDPL8219XUMA1 Infineon-XDPL8219-DataSheet-v01_01-EN.pdf?fileId=5546d46272aa54c00172c1d42f3c599b
Hersteller: Infineon Technologies
Description: IC LED DRVR CTRLR NO 100MA 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 15MHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 85°C (TA)
Applications: LED Lighting
Current - Output / Channel: 100mA
Internal Switch(s): Yes
Topology: Flyback
Supplier Device Package: PG-DSO-8-41
Dimming: No
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 24V
Part Status: Active
auf Bestellung 10450 Stücke:
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Anzahl Preis
8+2.50 EUR
10+2.24 EUR
25+2.12 EUR
100+1.80 EUR
250+1.69 EUR
500+1.48 EUR
1000+1.23 EUR
Mindestbestellmenge: 8
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TDK5116FHTMA1 fundamentals-of-power-semiconductors
TDK5116FHTMA1
Hersteller: Infineon Technologies
Description: RF TX IC ASK 866-870MHZ 10TFSOP
Packaging: Cut Tape (CT)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Frequency: 866MHz ~ 870MHz
Modulation or Protocol: ASK, FSK
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.1V ~ 4V
Power - Output: 11.5dBm
Applications: Alarm Systems, Communication Systems
Data Rate (Max): 20kbps
Current - Transmitting: 16mA
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-10-2
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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FS200R07N3E4R_B11 INFNS28543-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: FS200R07 - IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
auf Bestellung 68 Stücke:
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Anzahl Preis
2+358.86 EUR
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FS200R12PT4 INFNS28547-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: INSULATED GATE BIPOLAR TRANSISTO
auf Bestellung 131 Stücke:
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Anzahl Preis
2+324.94 EUR
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BSC079N10NSGATMA1 BSC079N10NS+Rev1.03.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a3043163797a601167b174f951147
BSC079N10NSGATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 13.4A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 50A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 110µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 50 V
auf Bestellung 4701 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.56 EUR
10+3.13 EUR
100+2.27 EUR
500+1.89 EUR
1000+1.85 EUR
Mindestbestellmenge: 4
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TLE5027CXAAD47AIHAMA1 fundamentals-of-power-semiconductors
TLE5027CXAAD47AIHAMA1
Hersteller: Infineon Technologies
Description: SENSOR MAGNETORESISTIVE PWM 3SIP
Packaging: Bulk
Package / Case: 3-SSIP Module
Output Type: PWM
Mounting Type: Through Hole
Axis: X, Y, Z
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Magnetoresistive
Supplier Device Package: PG-SSO-3-92
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q100
auf Bestellung 40500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
143+3.25 EUR
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TLE5027CXAAD47AGXAMA1
TLE5027CXAAD47AGXAMA1
Hersteller: Infineon Technologies
Description: SENSOR MAGNETORESISTIVE PWM 3SIP
Packaging: Bulk
Package / Case: 3-SSIP Module
Output Type: PWM
Mounting Type: Through Hole
Axis: X, Y, Z
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Magnetoresistive
Supplier Device Package: PG-SSO-3-92
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q100
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
135+3.45 EUR
Mindestbestellmenge: 135
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TLE5009A16E1200XUMA1 Infineon-TLE5x09A16_D-DS-v02_00-EN.pdf?fileId=5546d462696dbf12016977889fe858c9
TLE5009A16E1200XUMA1
Hersteller: Infineon Technologies
Description: IC HALL SENSOR LINEAR TDSO-16
Packaging: Bulk
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 125°C
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 3.6V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 20540 Stücke:
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Anzahl Preis
130+3.57 EUR
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TLE5009A16E2200XUMA1 Infineon-TLE5x09A16_D-DS-v02_00-EN.pdf?fileId=5546d462696dbf12016977889fe858c9
Hersteller: Infineon Technologies
Description: IC HALL SENSOR LINEAR TDSO-16
Packaging: Bulk
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 125°C
Termination Style: Gull Wing
Voltage - Supply: 4.5V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Active
auf Bestellung 7253 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
135+3.92 EUR
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TLE5025CE6747HAMA1 Part_Number_Guide_Web.pdf
Hersteller: Infineon Technologies
Description: MAG SWITCH SPEED SENSOR 3SSO
auf Bestellung 12372 Stücke:
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Anzahl Preis
150+3.36 EUR
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TLE5027CIE6747HAMA1 TLE5027C_PB_7-2-13.pdf
TLE5027CIE6747HAMA1
Hersteller: Infineon Technologies
Description: SENSOR MAGNETORESISTIVE PWM 3SIP
Packaging: Bulk
Package / Case: 3-SSIP Module
Output Type: PWM
Mounting Type: Through Hole
Axis: X, Y, Z
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Magnetoresistive
Supplier Device Package: PG-SSO-3-92
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
137+3.39 EUR
Mindestbestellmenge: 137
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TLE5009A16E2210XUMA1 Infineon-TLE5x09A16_D-DS-v02_00-EN.pdf?fileId=5546d462696dbf12016977889fe858c9
TLE5009A16E2210XUMA1
Hersteller: Infineon Technologies
Description: IC HALL SENSOR LINEAR TDSO-16
Packaging: Bulk
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 125°C
Termination Style: Gull Wing
Voltage - Supply: 4.5V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-TDSO-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 21597 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
130+3.57 EUR
Mindestbestellmenge: 130
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BTS736L2NTMA1 INFNS05478-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: BUFFER/INVERTER BASED PERIPHERAL
Produkt ist nicht verfügbar
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TLE4274GV50ATMA1 INFNS16630-1.pdf?t.download=true&u=5oefqw
TLE4274GV50ATMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR FIXED LDO REG
Packaging: Bulk
Package / Case: TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-3-1
Voltage - Output (Min/Fixed): 5V
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Produkt ist nicht verfügbar
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TLE4274GV50ATMA2 Infineon-TLE4274-DS-v01_70-EN.pdf?fileId=5546d46258fc0bc101595f8e637f1f8f
TLE4274GV50ATMA2
Hersteller: Infineon Technologies
Description: IC REG LIN 5V 400MA PG-TO263-3-1
Packaging: Cut Tape (CT)
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-3-1
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 695 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.08 EUR
10+2.27 EUR
25+2.06 EUR
100+1.84 EUR
250+1.74 EUR
500+1.67 EUR
Mindestbestellmenge: 6
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CY7C4235V-15ASXC CY7C4205V%2C15V%2C25V%2C35V%2C45V%2C4425V.pdf
CY7C4235V-15ASXC
Hersteller: Infineon Technologies
Description: IC FIFO SYNC 2KX18 11NS 64TQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 36K (2K x 18)
Operating Temperature: 0°C ~ 70°C
Data Rate: 66.7MHz
Access Time: 11ns
Current - Supply (Max): 30mA
Supplier Device Package: 64-TQFP (14x14)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: Yes
Retransmit Capability: Yes
FWFT Support: No
Part Status: Obsolete
Voltage - Supply: 3 V ~ 3.6 V
DigiKey Programmable: Not Verified
auf Bestellung 1008 Stücke:
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Anzahl Preis
16+32.11 EUR
Mindestbestellmenge: 16
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IPD14N06S2-80 INFNS09524-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IPD14N06 - 55V-60V N-CHANNEL AUT
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 7A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 4V @ 14µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 293 pF @ 25 V
Produkt ist nicht verfügbar
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CY7C1041CV33-10BAJXE Infineon-CY7C1041CV33_Automotive_4-Mbit_(256_K_16)_Static_RAM-AdditionalTechnicalInformation-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecab2cc43b0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integr
CY7C1041CV33-10BAJXE
Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-FBGA (7x8.5)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
auf Bestellung 12965 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.70 EUR
Mindestbestellmenge: 4
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CY7C1041CV33-10BAJXET Infineon-CY7C1041CV33_Automotive_4-Mbit_(256_K_16)_Static_RAM-AdditionalTechnicalInformation-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecab2cc43b0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integr
CY7C1041CV33-10BAJXET
Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 48FBGA
Packaging: Cut Tape (CT)
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-FBGA (7x8.5)
Part Status: Discontinued at Digi-Key
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
auf Bestellung 1975 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.56 EUR
Mindestbestellmenge: 4
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IPA60R125P6 Infineon-IPX60R125P6-DS-v02_00-en[1].pdf?fileId=5546d461464245d301468af2915b667f
IPA60R125P6
Hersteller: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 11.6A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 960µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 100 V
Produkt ist nicht verfügbar
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IPB60R600CP INFNS11341-1.pdf?t.download=true&u=5oefqw
IPB60R600CP
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 100 V
auf Bestellung 5970 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
433+1.15 EUR
Mindestbestellmenge: 433
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IPB60R520CP INFNS11337-1.pdf?t.download=true&u=5oefqw
IPB60R520CP
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 100 V
auf Bestellung 2996 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
378+1.29 EUR
Mindestbestellmenge: 378
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IPB60R250CPATMA1 IPB60R250CP_rev2.1.pdf?folderId=db3a30431ff98815012019af55de3f2c&fileId=db3a304320896aa201208b2fd3ce0087
IPB60R250CPATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 12A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V
auf Bestellung 62000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
202+2.36 EUR
Mindestbestellmenge: 202
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IPB60R250CP INFNS17419-1.pdf?t.download=true&u=5oefqw
IPB60R250CP
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 520µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V
auf Bestellung 41770 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
202+2.49 EUR
Mindestbestellmenge: 202
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BG3130RH6327XTSA1 BG3130.pdf
BG3130RH6327XTSA1
Hersteller: Infineon Technologies
Description: RF MOSFET 5V SOT363
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Current Rating (Amps): 25mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: 2 N-Channel (Dual)
Gain: 24dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.3dB
Supplier Device Package: PG-SOT363-PO
Part Status: Obsolete
Voltage - Rated: 8 V
Voltage - Test: 5 V
Current - Test: 14 mA
auf Bestellung 607750 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2732+0.17 EUR
Mindestbestellmenge: 2732
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BTS240AHKSA1 INFNS15457-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 47A, 10V
Power Dissipation (Max): 170W
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: PG-TO218-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 12772 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+21.33 EUR
Mindestbestellmenge: 24
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IPP120N06S4H1AKSA2 IPx120N06S4-H1.pdf
IPP120N06S4H1AKSA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 120A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21900 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 38480 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
145+3.47 EUR
Mindestbestellmenge: 145
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IPI120N06S402AKSA2 IPx120N06S4-02.pdf
IPI120N06S402AKSA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 120A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO262-3-1
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 10400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
154+3.29 EUR
Mindestbestellmenge: 154
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IPB120N06S4H1ATMA2 Infineon-I120N06S4_H1-DS-v01_00-en.pdf?fileId=db3a30431ff988150120388c9cf60caf
IPB120N06S4H1ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 120A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21900 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUC120N06S5N017ATMA1 Infineon-IAUC120N06S5N017-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f920171f48ce58a61bc
IAUC120N06S5N017ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 120A TDSON-8-43
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 60A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 94µA
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6952 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUC120N06S5N017ATMA1 Infineon-IAUC120N06S5N017-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f920171f48ce58a61bc
IAUC120N06S5N017ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 120A TDSON-8-43
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 60A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 94µA
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6952 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 310 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.03 EUR
10+2.51 EUR
100+2.08 EUR
Mindestbestellmenge: 5
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EVALIMOTION2GOTOBO1 Infineon-EVAL-iMOTION2GO-UserManual-v01_01-EN.pdf?fileId=5546d462719b59230171abbcc2b4481b
EVALIMOTION2GOTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR IMC101T
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: IMC101T
Supplied Contents: Board(s)
Primary Attributes: Motors (BLDC)
Part Status: Active
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+38.93 EUR
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IRFH7440TRPBFTR irfh7440pbf.pdf?fileId=5546d462533600a40153561f0e821eed
Hersteller: Infineon Technologies
Description: IRFH7440 - 12V-300V N-CHANNEL PO
Produkt ist nicht verfügbar
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SAB-C161PI-LM3V INFNS00746-1.pdf?t.download=true&u=5oefqw
SAB-C161PI-LM3V
Hersteller: Infineon Technologies
Description: SAB-C161PI-LF 3V CA - LEGACY 16-
Packaging: Bulk
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 3K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 4x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: EBI/EMI, I²C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-100-2
Part Status: Active
Number of I/O: 76
DigiKey Programmable: Not Verified
auf Bestellung 147 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+9.76 EUR
Mindestbestellmenge: 50
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SAB-C161O-L25M INFNS01615-1.pdf?t.download=true&u=5oefqw
SAB-C161O-L25M
Hersteller: Infineon Technologies
Description: SAB-C161O-L25M HA - LEGACY 16-BI
Packaging: Bulk
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 25MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-80-1
Part Status: Active
Number of I/O: 63
DigiKey Programmable: Not Verified
auf Bestellung 850 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+18.51 EUR
Mindestbestellmenge: 28
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SPD03N60S5XT Infineon-SPD_U03N60S5-DS-v02_05-en1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: SPD03N60 - 600V COOLMOS N-CHANNE
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 135µA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
611+0.86 EUR
Mindestbestellmenge: 611
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PSB21653EV1.4-G
Hersteller: Infineon Technologies
Description: INCA -IP2 SINGLE-CHIP IP PHONE W
Packaging: Bulk
Part Status: Active
auf Bestellung 429 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+76.82 EUR
Mindestbestellmenge: 7
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IRFR9N20DTR irfr9n20dpbf.pdf?fileId=5546d462533600a40153563610b1213b
IRFR9N20DTR
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 9.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.6A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V
Produkt ist nicht verfügbar
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IRFR9N20DTRL irfr9n20dpbf.pdf?fileId=5546d462533600a40153563610b1213b
IRFR9N20DTRL
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 9.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.6A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V
Produkt ist nicht verfügbar
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IRFR9N20DTRR irfr9n20dpbf.pdf?fileId=5546d462533600a40153563610b1213b
IRFR9N20DTRR
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 9.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.6A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: D-Pak
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V
Produkt ist nicht verfügbar
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IRFR9N20DPBF description irfr9n20dpbf.pdf?fileId=5546d462533600a40153563610b1213b
IRFR9N20DPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 9.4A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.6A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V
Produkt ist nicht verfügbar
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