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IPU60R2K1CEAKMA1 IPU60R2K1CEAKMA1 Infineon Technologies Infineon-IPU60R2K1CE-DS-v02_02-EN.pdf?fileId=5546d46249be182c0149c7e409461eac Description: CONSUMER
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO251-3
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Power Dissipation (Max): 38W (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 760mA, 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
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75+0.61 EUR
150+0.54 EUR
525+0.44 EUR
1050+0.39 EUR
2025+0.36 EUR
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CYRF6936-XC Infineon Technologies Description: IC SOC WIRELESS USB
Packaging: Bulk
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ESD145B1W01005E6327XTSA1 ESD145B1W01005E6327XTSA1 Infineon Technologies Infineon-New+generation+ESD+protection+diodes-PB-v01_00-EN.pdf?fileId=5546d4625cc9456a015d0ccb7b9a57e3 Description: TVS DIODE 18VWM 5VC P/PGWLL22
Packaging: Tape & Reel (TR)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: RF Antenna
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 18V (Max)
Supplier Device Package: P/PG-WLL-2-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 18.5V
Voltage - Clamping (Max) @ Ipp: 5V (Typ)
Power - Peak Pulse: 21W
Power Line Protection: No
Part Status: Active
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ESD145B1W01005E6327XTSA1 ESD145B1W01005E6327XTSA1 Infineon Technologies Infineon-New+generation+ESD+protection+diodes-PB-v01_00-EN.pdf?fileId=5546d4625cc9456a015d0ccb7b9a57e3 Description: TVS DIODE 18VWM 5VC P/PGWLL22
Packaging: Cut Tape (CT)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: RF Antenna
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 18V (Max)
Supplier Device Package: P/PG-WLL-2-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 18.5V
Voltage - Clamping (Max) @ Ipp: 5V (Typ)
Power - Peak Pulse: 21W
Power Line Protection: No
Part Status: Active
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IMBG120R220M1HXTMA1 IMBG120R220M1HXTMA1 Infineon Technologies Infineon-IMBG120R220M1H-DataSheet-v02_01-EN.pdf?fileId=5546d462749a7c2d0174b0ecffdf326f Description: SICFET N-CH 1200V 13A TO263
Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +18V, -15V
Part Status: Active
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 1.6mA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 294mOhm @ 4A, 18V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
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MB95F478KPMC2-G-SNE2 MB95F478KPMC2-G-SNE2 Infineon Technologies MB95410H_470H_Series_RevA_4-4-16.pdf Description: IC MCU 8BIT 60KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 60KB (60K x 8)
RAM Size: 1.98K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: I2C, SIO, UART/USART
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (12x12)
Number of I/O: 59
DigiKey Programmable: Not Verified
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TLE9872QTW40XUMA1 TLE9872QTW40XUMA1 Infineon Technologies Infineon-TLE9872QTW40-DataSheet-v01_00-EN.pdf?fileId=5546d46274dd77260174e8c7814434a5 Description: EMBEDDED POWER
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Number of I/O: 10
Grade: Automotive
Supplier Device Package: 48-TQFP (7x7)
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH (256kB)
Controller Series: TLE987x
Voltage - Supply: 5.5V ~ 27V
Operating Temperature: -40°C ~ 175°C (TJ)
RAM Size: 8K x 8
Interface: LINbus, SPI, SSC, UART/USART
Mounting Type: Surface Mount
Package / Case: 48-TQFP Exposed Pad
Packaging: Cut Tape (CT)
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100+7.89 EUR
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ICB2FL03GXUMA2 ICB2FL03GXUMA2 Infineon Technologies Infineon-ICB2FL03G-DS-v01_01-en.pdf?fileId=db3a304331c8f8560131d2858b290671 Description: IC FLRSCT LAMP CTR 100KHZ DSO-16
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 20kHz ~ 100kHz
Type: Fluorescent Lamp Controller
Operating Temperature: -25°C ~ 150°C
Voltage - Supply: 10.6V ~ 17.5V
Supplier Device Package: PG-DSO-16
Dimming: No
Part Status: Active
Current - Supply: 4.2 mA
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ICB2FL03GXUMA2 ICB2FL03GXUMA2 Infineon Technologies Infineon-ICB2FL03G-DS-v01_01-en.pdf?fileId=db3a304331c8f8560131d2858b290671 Description: IC FLRSCT LAMP CTR 100KHZ DSO-16
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 20kHz ~ 100kHz
Type: Fluorescent Lamp Controller
Operating Temperature: -25°C ~ 150°C
Voltage - Supply: 10.6V ~ 17.5V
Supplier Device Package: PG-DSO-16
Dimming: No
Part Status: Active
Current - Supply: 4.2 mA
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5+4.84 EUR
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TT170N16KOFHPSA1 TT170N16KOFHPSA1 Infineon Technologies Infineon-TT170N-DataSheet-v03_01-EN.pdf?fileId=5546d4627112d9d501712b0902734057 Description: SCR MODULE 1.6KV 350A MODULE
Voltage - Off State: 1.6 kV
Current - On State (It (RMS)) (Max): 350 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 223 A
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 5200A @ 50Hz
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Series Connection - All SCRs
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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TT170N14KOFHPSA1 Infineon Technologies Infineon-TT170N-DataSheet-v03_01-EN.pdf?fileId=5546d4627112d9d501712b0902734057 Description: SCR MODULE 1.4KV 350A MODULE
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TT170N18KOFHPSA1 Infineon Technologies Infineon-TT170N-DataSheet-v03_01-EN.pdf?fileId=5546d4627112d9d501712b0902734057 Description: SCR MODULE 1.8KV 350A MODULE
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TT170N16KOFHPSA1 TT170N16KOFHPSA1 Infineon Technologies Infineon-TT170N-DataSheet-v03_01-EN.pdf?fileId=5546d4627112d9d501712b0902734057 Description: SCR MODULE 1.6KV 350A MODULE
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Series Connection - All SCRs
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Voltage - Off State: 1.6 kV
Current - On State (It (RMS)) (Max): 350 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 223 A
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 5200A @ 50Hz
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TT170N12KOFHPSA1 Infineon Technologies TT170N.pdf Description: SCR MODULE 1.2KV 350A MODULE
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REF62WFLY1700VSICTOBO1 REF62WFLY1700VSICTOBO1 Infineon Technologies Infineon-IMBF170R1K0M1-DataSheet-v02_01-EN.pdf?fileId=5546d462712ef9b70171820c93e21adc Description: DEV KIT
Part Status: Active
Supplied Contents: Board(s)
Type: Power Management
Function: Power Supply
Packaging: Bulk
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1+100.51 EUR
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ESD234B1W0201E6327XTSA1 ESD234B1W0201E6327XTSA1 Infineon Technologies Infineon-ESD234-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d462677d0f4601679891f65f7088 Description: TVS DIODE 5.5VWM 12VC WLL-2-1
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 84W
Voltage - Clamping (Max) @ Ipp: 12V (Typ)
Voltage - Breakdown (Min): 7.5V
Bidirectional Channels: 1
Supplier Device Package: WLL-2-1
Voltage - Reverse Standoff (Typ): 5.5V
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Capacitance @ Frequency: 56pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ESD234B1W0201E6327XTSA1 ESD234B1W0201E6327XTSA1 Infineon Technologies Infineon-ESD234-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d462677d0f4601679891f65f7088 Description: TVS DIODE 5.5VWM 12VC WLL-2-1
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 84W
Voltage - Clamping (Max) @ Ipp: 12V (Typ)
Voltage - Breakdown (Min): 7.5V
Bidirectional Channels: 1
Supplier Device Package: WLL-2-1
Voltage - Reverse Standoff (Typ): 5.5V
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Capacitance @ Frequency: 56pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Cut Tape (CT)
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141+0.14 EUR
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S25FL256SAGMFM000 S25FL256SAGMFM000 Infineon Technologies Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Memory Organization: 32M x 8
Memory Interface: SPI - Quad I/O
Part Status: Active
Supplier Device Package: 16-SOIC
Memory Format: FLASH
Clock Frequency: 133 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Mbit
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tray
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2+19.06 EUR
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40+17.15 EUR
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S25FL256SAGBHIY00 S25FL256SAGBHIY00 Infineon Technologies Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Description: IC FLASH 256MBIT SPI/QUAD 24BGA
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Tray
DigiKey Programmable: Not Verified
Memory Organization: 32M x 8
Memory Interface: SPI - Quad I/O
Supplier Device Package: 24-BGA (8x6)
Memory Format: FLASH
Clock Frequency: 133 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Mbit
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TLE6389-3GV50 TLE6389-3GV50 Infineon Technologies INFN-S-A0005396568-1.pdf?t.download=true&u=5oefqw Description: SWITCHING CONTROLLER
Output Type: Transistor Driver
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Number of Outputs: 1
Part Status: Active
Clock Sync: Yes
Duty Cycle (Max): 100%
Output Phases: 1
Control Features: Current Limit, Enable, Reset, Sync
Synchronous Rectifier: Yes
Supplier Device Package: PG-DSO-14
Voltage - Supply (Vcc/Vdd): 5V ~ 60V
Topology: Buck
Frequency - Switching: 360kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Function: Step-Down
Mounting Type: Surface Mount
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TLE6237GNTMA1 Infineon Technologies Description: NETWORK INTERFACE CONTROLLER
Packaging: Bulk
Part Status: Active
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105+5.14 EUR
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TLE6214L TLE6214L Infineon Technologies TLE6214L.pdf Description: IC PWR SWITCH N-CHAN 1:1 DSO-12
Packaging: Bulk
Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 180mOhm
Voltage - Load: 4.5V ~ 5.5V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-12-4
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
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TLE6289GP Infineon Technologies Description: IC BRIDGE DRIVER 3-PHASE
Packaging: Bulk
Part Status: Active
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TLE6262GNUMA1 Infineon Technologies INFNS03960-1.pdf?t.download=true&u=5oefqw Description: IC FAULT TOLERANT CAN-LDO
Packaging: Bulk
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TLE6716GRXUMA1 Infineon Technologies Description: TLE6716 - LIMITED DATA AVAILABLE
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
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TLE6286GDUMA1 TLE6286GDUMA1 Infineon Technologies tle6286v12.pdf?t.download=true&u=5oefqw Description: IC TRANSCEIVER FULL 1/1 DSO-16
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 20kBaud
Protocol: LIN
Supplier Device Package: PG-DSO-16-11
Receiver Hysteresis: 600 mV
Duplex: Full
Part Status: Active
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TLE63893GV50XUMA1 TLE63893GV50XUMA1 Infineon Technologies TLE_6389_Rev2007.pdf Description: IC REG CTRLR BUCK 14DSO
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TLE63892GVXUMA2 TLE63892GVXUMA2 Infineon Technologies Infineon-TLE6389-DS-v02_10-EN.pdf?fileId=5546d46258fc0bc1015969d25b5241c7 Description: IC REG CTRLR BUCK 14DSOP
Number of Outputs: 1
Part Status: Last Time Buy
Clock Sync: Yes
Duty Cycle (Max): 100%
Output Phases: 1
Control Features: Current Limit, Enable, Reset
Synchronous Rectifier: Yes
Supplier Device Package: PG-DSO-14
Voltage - Supply (Vcc/Vdd): 5V ~ 60V
Topology: Buck
Frequency - Switching: 360kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Function: Step-Down
Mounting Type: Surface Mount
Output Type: Transistor Driver
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
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TLE6714G TLE6714G Infineon Technologies tle6710q_2g_4g.pdf?t.download=true&u=5oefqw Description: QUAD FIRING AIRBAG IC
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
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87+6.2 EUR
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BSM100GB120DN2S7HOSA1 Infineon Technologies EUPCS02845-1.pdf?t.download=true&u=5oefqw Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
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BSM300GA120DN2S2HDLA1 Infineon Technologies Description: POWER MODULE IGBT 1200V AG-62MM
Part Status: Obsolete
Packaging: Bulk
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BSM200GA170DN2SE325HOSA1 Infineon Technologies Description: IGBT MODULE
Packaging: Bulk
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IAUC120N04S6L012ATMA1 IAUC120N04S6L012ATMA1 Infineon Technologies Infineon-IAUC120N04S6L012-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1ca3c0351219 Description: IAUC120N04S6L012ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.21mOhm @ 60A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2V @ 60µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4832 pF @ 25 V
Qualification: AEC-Q101
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IAUC120N04S6L012ATMA1 IAUC120N04S6L012ATMA1 Infineon Technologies Infineon-IAUC120N04S6L012-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1ca3c0351219 Description: IAUC120N04S6L012ATMA1
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4832 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 2V @ 60µA
Power Dissipation (Max): 115W (Tc)
Rds On (Max) @ Id, Vgs: 1.21mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
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EVAL-IMM101T-046TOBO1 EVAL-IMM101T-046TOBO1 Infineon Technologies Infineon-Eval-IMM101T-UserManual-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016ca8dad3542c50 Description: EVAL BOARD FOR IMM101T-046
Contents: Board(s)
Primary Attributes: Motors (BLDC, PMSM)
Supplied Contents: Board(s)
Utilized IC / Part: IMM101T-046
Type: Power Management
Function: Motor Controller/Driver
Packaging: Bulk
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IPA50R650CEXKSA2 IPA50R650CEXKSA2 Infineon Technologies IPA50R650CE.pdf Description: MOSFET N-CH 500V 4.6A TO220
Input Capacitance (Ciss) (Max) @ Vds: 342 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 13V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-FP
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Power Dissipation (Max): 27.2W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 1.8A, 13V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
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IPA50R650CEZKSA2 Infineon Technologies Infineon-IPA50R650CE-DS-v02_03-EN.pdf?fileId=db3a304339d29c450139d4d1cdd003a9 Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 342 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 13V
Part Status: Active
Supplier Device Package: PG-TO220 Full Pack
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Power Dissipation (Max): 27.2W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 1.8A, 13V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
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IPL60R085P7AUMA1 IPL60R085P7AUMA1 Infineon Technologies Infineon-IPL60R085P7-DS-v02_00-EN.pdf?fileId=5546d4625ee5d4cd015eebed1c9c5b3f Description: MOSFET N-CH 600V 39A 4VSON
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 11.8A, 10V
Power Dissipation (Max): 154W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-VSON-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 400 V
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IPL60R085P7AUMA1 IPL60R085P7AUMA1 Infineon Technologies Infineon-IPL60R085P7-DS-v02_00-EN.pdf?fileId=5546d4625ee5d4cd015eebed1c9c5b3f Description: MOSFET N-CH 600V 39A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 11.8A, 10V
Power Dissipation (Max): 154W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-VSON-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 400 V
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CY7C2564XV18-450BZXC CY7C2564XV18-450BZXC Infineon Technologies download Description: IC SRAM 72MBIT PAR 165FBGA
DigiKey Programmable: Not Verified
Memory Organization: 2M x 36
Memory Interface: Parallel
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 450 MHz
Technology: SRAM - Synchronous, QDR II+
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 72Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
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IRGC100B120UB Infineon Technologies IRGC100B120UB_7-6-15.pdf Description: IGBT CHIP
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A
Supplier Device Package: Die
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
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2EDN7224GXTMA1 Infineon Technologies Description: 2EDN7224G - GATE DRIVER
Part Status: Active
Packaging: Bulk
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2EDN7223FXTMA1 Infineon Technologies Description: POWER SWITCH, TRANSMITTER, REC
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
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XMC1403Q040X0128AAXUMA1 XMC1403Q040X0128AAXUMA1 Infineon Technologies Infineon-XMC1400-DS-v01_03-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2 Description: IC MCU 32BIT 128KB FLASH 40VQFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-40-17
Part Status: Active
Number of I/O: 27
DigiKey Programmable: Not Verified
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1ED44173N01BXTSA1 1ED44173N01BXTSA1 Infineon Technologies infineon-1ed44173n01b-datasheet-en.pdf Description: IC GATE DRVR LOW-SIDE SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 8.6V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-SOT23-6-3
Rise / Fall Time (Typ): 5ns, 5ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.2V, 1.9V
Current - Peak Output (Source, Sink): 2.6A, 2.6A
Part Status: Active
DigiKey Programmable: Not Verified
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2ED28073J06FXUMA1 2ED28073J06FXUMA1 Infineon Technologies Infineon-2ED28073J06F-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b7017181f76e671a4d Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Current - Peak Output (Source, Sink): 20mA, 80mA
DigiKey Programmable: Not Verified
Logic Voltage - VIL, VIH: 0.8V, 2.2 V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
High Side Voltage - Max (Bootstrap): 600 V
Input Type: CMOS, TTL
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 125°C (TA)
Part Status: Active
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Rise / Fall Time (Typ): 1.5µs, 225ns
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TLE5014PROGKITTOBO1 TLE5014PROGKITTOBO1 Infineon Technologies Infineon-TLE5014-Eval_Kit%20and%20SatelliteBoard-v01_00-general_description-GS-v01_00-EN.pdf?fileId=5546d46264fee02f01651a11ee7375dd Description: EVALUATION BOARD FOR TLE5014
Contents: Board(s)
Part Status: Active
Supplied Contents: Board(s)
Utilized IC / Part: TLE5014
Sensor Type: Magnetic, GMR (Giant Magnetoresistive)
Packaging: Box
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BTN7970B BTN7970B Infineon Technologies INFNS11665-1.pdf?t.download=true&u=5oefqw Description: IC HALF BRIDGE DRVR 70A TO263-7
Features: Charge Pump, Status Flag
Packaging: Bulk
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 8V ~ 18V
Rds On (Typ): 9mOhm LS, 7mOhm HS
Applications: General Purpose
Current - Output / Channel: 70A
Current - Peak Output: 70A
Technology: DMOS
Voltage - Load: 8V ~ 18V
Supplier Device Package: PG-TO263-7-1
Fault Protection: Current Limiting, Over Current, Over Temperature, Over Voltage, Short Circuit
Load Type: Inductive
Part Status: Active
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IGP01N120H2XKSA1 IGP01N120H2XKSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IGBT 1200V 3.2A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 1A
Supplier Device Package: PG-TO220-3-1
Td (on/off) @ 25°C: 13ns/370ns
Switching Energy: 140µJ
Test Condition: 800V, 1A, 241Ohm, 15V
Gate Charge: 8.6 nC
Current - Collector (Ic) (Max): 3.2 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 3.5 A
Power - Max: 28 W
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IGP01N120H2 IGP01N120H2 Infineon Technologies INFNS16255-1.pdf?t.download=true&u=5oefqw Description: IGBT 1200V 3.2A 28W TO220-3
Input Type: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Power - Max: 28 W
Current - Collector Pulsed (Icm): 3.5 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 3.2 A
Part Status: Active
Gate Charge: 8.6 nC
Test Condition: 800V, 1A, 241Ohm, 15V
Switching Energy: 140µJ
Td (on/off) @ 25°C: 13ns/370ns
Supplier Device Package: PG-TO220-3-1
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 1A
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SIGC76T60R3EX7SA1 SIGC76T60R3EX7SA1 Infineon Technologies Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 150A
Supplier Device Package: Die
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 450 A
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TLS850B0TBV33ATMA1 TLS850B0TBV33ATMA1 Infineon Technologies Infineon-TLS850B0TB%20V33-DS-v01_00-EN.pdf?fileId=5546d4625fe3678401600cf0f9cb6d40 Description: IC REG LINEAR 3.3V PG-TO263-5-1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 25 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-5-1
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Grade: Automotive
Part Status: Active
PSRR: 63dB (100Hz)
Voltage Dropout (Max): 0.6V @ 250mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 33 µA
Qualification: AEC-Q100
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TLS850B0TBV33ATMA1 TLS850B0TBV33ATMA1 Infineon Technologies Infineon-TLS850B0TB%20V33-DS-v01_00-EN.pdf?fileId=5546d4625fe3678401600cf0f9cb6d40 Description: IC REG LINEAR 3.3V PG-TO263-5-1
Packaging: Cut Tape (CT)
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 25 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-5-1
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Grade: Automotive
Part Status: Active
PSRR: 63dB (100Hz)
Voltage Dropout (Max): 0.6V @ 250mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 33 µA
Qualification: AEC-Q100
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AUIPS8121RTRLXSMA1 Infineon Technologies Description: IR_HSS-LSS-GATEDRIVER
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GATELEAD28134XPSA1 Infineon Technologies Description: DUMMY 57
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GATELEAD28128HPSA1 Infineon Technologies Description: ACCY GATE LEAD FOR MODULE
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GATELEAD28129HPSA1 Infineon Technologies Description: ACCY GATE LEAD FOR MODULE
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GATELEAD28133HPSA1 Infineon Technologies Description: ACCY GATE LEAD FOR MODULE
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GATELEAD30258HPSA1 Infineon Technologies Description: ACCY GATE LEAD FOR MODULE
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GATELEADL500G2K2XPSA1 GATELEADL500G2K2XPSA1 Infineon Technologies Infineon-Gate%20%20leads%20for%20PB20-DS-v03_01-EN.pdf?fileId=5546d462525dbac401532c0b43cd707d Description: ACCY GATE LEAD FOR MODULE
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IPU60R2K1CEAKMA1 Infineon-IPU60R2K1CE-DS-v02_02-EN.pdf?fileId=5546d46249be182c0149c7e409461eac
IPU60R2K1CEAKMA1
Hersteller: Infineon Technologies
Description: CONSUMER
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO251-3
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Power Dissipation (Max): 38W (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 760mA, 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
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CYRF6936-XC
Hersteller: Infineon Technologies
Description: IC SOC WIRELESS USB
Packaging: Bulk
DigiKey Programmable: Not Verified
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ESD145B1W01005E6327XTSA1 Infineon-New+generation+ESD+protection+diodes-PB-v01_00-EN.pdf?fileId=5546d4625cc9456a015d0ccb7b9a57e3
ESD145B1W01005E6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 18VWM 5VC P/PGWLL22
Packaging: Tape & Reel (TR)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: RF Antenna
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 18V (Max)
Supplier Device Package: P/PG-WLL-2-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 18.5V
Voltage - Clamping (Max) @ Ipp: 5V (Typ)
Power - Peak Pulse: 21W
Power Line Protection: No
Part Status: Active
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ESD145B1W01005E6327XTSA1 Infineon-New+generation+ESD+protection+diodes-PB-v01_00-EN.pdf?fileId=5546d4625cc9456a015d0ccb7b9a57e3
ESD145B1W01005E6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 18VWM 5VC P/PGWLL22
Packaging: Cut Tape (CT)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: RF Antenna
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 18V (Max)
Supplier Device Package: P/PG-WLL-2-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 18.5V
Voltage - Clamping (Max) @ Ipp: 5V (Typ)
Power - Peak Pulse: 21W
Power Line Protection: No
Part Status: Active
auf Bestellung 186 Stücke:
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AnzahlPrivatkunde
112+0.19 EUR
141+0.14 EUR
Mindestbestellmenge: 112 Stücke
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IMBG120R220M1HXTMA1 Infineon-IMBG120R220M1H-DataSheet-v02_01-EN.pdf?fileId=5546d462749a7c2d0174b0ecffdf326f
IMBG120R220M1HXTMA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 1200V 13A TO263
Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +18V, -15V
Part Status: Active
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 1.6mA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 294mOhm @ 4A, 18V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
auf Bestellung 1701 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+11.88 EUR
10+7.96 EUR
100+5.74 EUR
500+5.37 EUR
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MB95F478KPMC2-G-SNE2 MB95410H_470H_Series_RevA_4-4-16.pdf
MB95F478KPMC2-G-SNE2
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 60KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 60KB (60K x 8)
RAM Size: 1.98K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: I2C, SIO, UART/USART
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (12x12)
Number of I/O: 59
DigiKey Programmable: Not Verified
auf Bestellung 1342 Stücke:
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AnzahlPrivatkunde
8+2.67 EUR
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TLE9872QTW40XUMA1 Infineon-TLE9872QTW40-DataSheet-v01_00-EN.pdf?fileId=5546d46274dd77260174e8c7814434a5
TLE9872QTW40XUMA1
Hersteller: Infineon Technologies
Description: EMBEDDED POWER
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Number of I/O: 10
Grade: Automotive
Supplier Device Package: 48-TQFP (7x7)
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH (256kB)
Controller Series: TLE987x
Voltage - Supply: 5.5V ~ 27V
Operating Temperature: -40°C ~ 175°C (TJ)
RAM Size: 8K x 8
Interface: LINbus, SPI, SSC, UART/USART
Mounting Type: Surface Mount
Package / Case: 48-TQFP Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 2592 Stücke:
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AnzahlPrivatkunde
2+12.15 EUR
10+9.35 EUR
25+8.66 EUR
100+7.89 EUR
250+7.52 EUR
500+7.31 EUR
1000+7.12 EUR
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ICB2FL03GXUMA2 Infineon-ICB2FL03G-DS-v01_01-en.pdf?fileId=db3a304331c8f8560131d2858b290671
ICB2FL03GXUMA2
Hersteller: Infineon Technologies
Description: IC FLRSCT LAMP CTR 100KHZ DSO-16
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 20kHz ~ 100kHz
Type: Fluorescent Lamp Controller
Operating Temperature: -25°C ~ 150°C
Voltage - Supply: 10.6V ~ 17.5V
Supplier Device Package: PG-DSO-16
Dimming: No
Part Status: Active
Current - Supply: 4.2 mA
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AnzahlPrivatkunde
2500+2.52 EUR
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ICB2FL03GXUMA2 Infineon-ICB2FL03G-DS-v01_01-en.pdf?fileId=db3a304331c8f8560131d2858b290671
ICB2FL03GXUMA2
Hersteller: Infineon Technologies
Description: IC FLRSCT LAMP CTR 100KHZ DSO-16
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 20kHz ~ 100kHz
Type: Fluorescent Lamp Controller
Operating Temperature: -25°C ~ 150°C
Voltage - Supply: 10.6V ~ 17.5V
Supplier Device Package: PG-DSO-16
Dimming: No
Part Status: Active
Current - Supply: 4.2 mA
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.84 EUR
10+3.61 EUR
25+3.3 EUR
100+2.95 EUR
250+2.78 EUR
500+2.73 EUR
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TT170N16KOFHPSA1 Infineon-TT170N-DataSheet-v03_01-EN.pdf?fileId=5546d4627112d9d501712b0902734057
TT170N16KOFHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 350A MODULE
Voltage - Off State: 1.6 kV
Current - On State (It (RMS)) (Max): 350 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 223 A
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 5200A @ 50Hz
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Series Connection - All SCRs
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
auf Bestellung 9 Stücke:
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AnzahlPrivatkunde
2+295.57 EUR
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TT170N14KOFHPSA1 Infineon-TT170N-DataSheet-v03_01-EN.pdf?fileId=5546d4627112d9d501712b0902734057
Hersteller: Infineon Technologies
Description: SCR MODULE 1.4KV 350A MODULE
Produkt ist nicht verfügbar
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TT170N18KOFHPSA1 Infineon-TT170N-DataSheet-v03_01-EN.pdf?fileId=5546d4627112d9d501712b0902734057
Hersteller: Infineon Technologies
Description: SCR MODULE 1.8KV 350A MODULE
Produkt ist nicht verfügbar
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TT170N16KOFHPSA1 Infineon-TT170N-DataSheet-v03_01-EN.pdf?fileId=5546d4627112d9d501712b0902734057
TT170N16KOFHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 350A MODULE
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Series Connection - All SCRs
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Voltage - Off State: 1.6 kV
Current - On State (It (RMS)) (Max): 350 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 223 A
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 5200A @ 50Hz
Produkt ist nicht verfügbar
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TT170N12KOFHPSA1 TT170N.pdf
Hersteller: Infineon Technologies
Description: SCR MODULE 1.2KV 350A MODULE
Produkt ist nicht verfügbar
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REF62WFLY1700VSICTOBO1 Infineon-IMBF170R1K0M1-DataSheet-v02_01-EN.pdf?fileId=5546d462712ef9b70171820c93e21adc
REF62WFLY1700VSICTOBO1
Hersteller: Infineon Technologies
Description: DEV KIT
Part Status: Active
Supplied Contents: Board(s)
Type: Power Management
Function: Power Supply
Packaging: Bulk
auf Bestellung 9 Stücke:
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AnzahlPrivatkunde
1+100.51 EUR
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ESD234B1W0201E6327XTSA1 Infineon-ESD234-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d462677d0f4601679891f65f7088
ESD234B1W0201E6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 5.5VWM 12VC WLL-2-1
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 84W
Voltage - Clamping (Max) @ Ipp: 12V (Typ)
Voltage - Breakdown (Min): 7.5V
Bidirectional Channels: 1
Supplier Device Package: WLL-2-1
Voltage - Reverse Standoff (Typ): 5.5V
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Capacitance @ Frequency: 56pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ESD234B1W0201E6327XTSA1 Infineon-ESD234-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d462677d0f4601679891f65f7088
ESD234B1W0201E6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 5.5VWM 12VC WLL-2-1
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 84W
Voltage - Clamping (Max) @ Ipp: 12V (Typ)
Voltage - Breakdown (Min): 7.5V
Bidirectional Channels: 1
Supplier Device Package: WLL-2-1
Voltage - Reverse Standoff (Typ): 5.5V
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Capacitance @ Frequency: 56pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Cut Tape (CT)
auf Bestellung 375 Stücke:
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AnzahlPrivatkunde
91+0.23 EUR
141+0.14 EUR
285+0.074 EUR
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S25FL256SAGMFM000 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL256SAGMFM000
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Memory Organization: 32M x 8
Memory Interface: SPI - Quad I/O
Part Status: Active
Supplier Device Package: 16-SOIC
Memory Format: FLASH
Clock Frequency: 133 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Mbit
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tray
auf Bestellung 212 Stücke:
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AnzahlPrivatkunde
2+19.06 EUR
10+17.64 EUR
25+17.24 EUR
40+17.15 EUR
80+15.09 EUR
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S25FL256SAGBHIY00 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL256SAGBHIY00
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 24BGA
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Tray
DigiKey Programmable: Not Verified
Memory Organization: 32M x 8
Memory Interface: SPI - Quad I/O
Supplier Device Package: 24-BGA (8x6)
Memory Format: FLASH
Clock Frequency: 133 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Mbit
auf Bestellung 487 Stücke:
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9+2.34 EUR
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TLE6389-3GV50 INFN-S-A0005396568-1.pdf?t.download=true&u=5oefqw
TLE6389-3GV50
Hersteller: Infineon Technologies
Description: SWITCHING CONTROLLER
Output Type: Transistor Driver
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Number of Outputs: 1
Part Status: Active
Clock Sync: Yes
Duty Cycle (Max): 100%
Output Phases: 1
Control Features: Current Limit, Enable, Reset, Sync
Synchronous Rectifier: Yes
Supplier Device Package: PG-DSO-14
Voltage - Supply (Vcc/Vdd): 5V ~ 60V
Topology: Buck
Frequency - Switching: 360kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Function: Step-Down
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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TLE6237GNTMA1
Hersteller: Infineon Technologies
Description: NETWORK INTERFACE CONTROLLER
Packaging: Bulk
Part Status: Active
auf Bestellung 8000 Stücke:
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AnzahlPrivatkunde
105+5.14 EUR
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TLE6214L TLE6214L.pdf
TLE6214L
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-12
Packaging: Bulk
Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 180mOhm
Voltage - Load: 4.5V ~ 5.5V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-12-4
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
auf Bestellung 13177 Stücke:
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AnzahlPrivatkunde
80+6.76 EUR
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TLE6289GP
Hersteller: Infineon Technologies
Description: IC BRIDGE DRIVER 3-PHASE
Packaging: Bulk
Part Status: Active
auf Bestellung 7040 Stücke:
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70+7.74 EUR
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TLE6262GNUMA1 INFNS03960-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IC FAULT TOLERANT CAN-LDO
Packaging: Bulk
Produkt ist nicht verfügbar
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TLE6716GRXUMA1
Hersteller: Infineon Technologies
Description: TLE6716 - LIMITED DATA AVAILABLE
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 57500 Stücke:
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AnzahlPrivatkunde
176+3.06 EUR
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TLE6286GDUMA1 tle6286v12.pdf?t.download=true&u=5oefqw
TLE6286GDUMA1
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER FULL 1/1 DSO-16
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 20kBaud
Protocol: LIN
Supplier Device Package: PG-DSO-16-11
Receiver Hysteresis: 600 mV
Duplex: Full
Part Status: Active
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179+3.02 EUR
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TLE63893GV50XUMA1 TLE_6389_Rev2007.pdf
TLE63893GV50XUMA1
Hersteller: Infineon Technologies
Description: IC REG CTRLR BUCK 14DSO
Produkt ist nicht verfügbar
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TLE63892GVXUMA2 Infineon-TLE6389-DS-v02_10-EN.pdf?fileId=5546d46258fc0bc1015969d25b5241c7
TLE63892GVXUMA2
Hersteller: Infineon Technologies
Description: IC REG CTRLR BUCK 14DSOP
Number of Outputs: 1
Part Status: Last Time Buy
Clock Sync: Yes
Duty Cycle (Max): 100%
Output Phases: 1
Control Features: Current Limit, Enable, Reset
Synchronous Rectifier: Yes
Supplier Device Package: PG-DSO-14
Voltage - Supply (Vcc/Vdd): 5V ~ 60V
Topology: Buck
Frequency - Switching: 360kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Function: Step-Down
Mounting Type: Surface Mount
Output Type: Transistor Driver
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
Produkt ist nicht verfügbar
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TLE6714G tle6710q_2g_4g.pdf?t.download=true&u=5oefqw
TLE6714G
Hersteller: Infineon Technologies
Description: QUAD FIRING AIRBAG IC
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
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AnzahlPrivatkunde
87+6.2 EUR
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BSM100GB120DN2S7HOSA1 EUPCS02845-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
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3+223.3 EUR
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BSM300GA120DN2S2HDLA1
Hersteller: Infineon Technologies
Description: POWER MODULE IGBT 1200V AG-62MM
Part Status: Obsolete
Packaging: Bulk
auf Bestellung 137 Stücke:
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2+305.48 EUR
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BSM200GA170DN2SE325HOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE
Packaging: Bulk
Produkt ist nicht verfügbar
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IAUC120N04S6L012ATMA1 Infineon-IAUC120N04S6L012-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1ca3c0351219
IAUC120N04S6L012ATMA1
Hersteller: Infineon Technologies
Description: IAUC120N04S6L012ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.21mOhm @ 60A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2V @ 60µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4832 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUC120N04S6L012ATMA1 Infineon-IAUC120N04S6L012-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1ca3c0351219
IAUC120N04S6L012ATMA1
Hersteller: Infineon Technologies
Description: IAUC120N04S6L012ATMA1
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4832 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 2V @ 60µA
Power Dissipation (Max): 115W (Tc)
Rds On (Max) @ Id, Vgs: 1.21mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
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100+1.74 EUR
500+1.39 EUR
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EVAL-IMM101T-046TOBO1 Infineon-Eval-IMM101T-UserManual-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016ca8dad3542c50
EVAL-IMM101T-046TOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR IMM101T-046
Contents: Board(s)
Primary Attributes: Motors (BLDC, PMSM)
Supplied Contents: Board(s)
Utilized IC / Part: IMM101T-046
Type: Power Management
Function: Motor Controller/Driver
Packaging: Bulk
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IPA50R650CEXKSA2 IPA50R650CE.pdf
IPA50R650CEXKSA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 4.6A TO220
Input Capacitance (Ciss) (Max) @ Vds: 342 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 13V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-FP
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Power Dissipation (Max): 27.2W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 1.8A, 13V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
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IPA50R650CEZKSA2 Infineon-IPA50R650CE-DS-v02_03-EN.pdf?fileId=db3a304339d29c450139d4d1cdd003a9
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 342 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 13V
Part Status: Active
Supplier Device Package: PG-TO220 Full Pack
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Power Dissipation (Max): 27.2W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 1.8A, 13V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Produkt ist nicht verfügbar
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IPL60R085P7AUMA1 Infineon-IPL60R085P7-DS-v02_00-EN.pdf?fileId=5546d4625ee5d4cd015eebed1c9c5b3f
IPL60R085P7AUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 39A 4VSON
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 11.8A, 10V
Power Dissipation (Max): 154W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-VSON-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 400 V
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3000+4.13 EUR
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IPL60R085P7AUMA1 Infineon-IPL60R085P7-DS-v02_00-EN.pdf?fileId=5546d4625ee5d4cd015eebed1c9c5b3f
IPL60R085P7AUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 39A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 11.8A, 10V
Power Dissipation (Max): 154W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-VSON-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 400 V
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CY7C2564XV18-450BZXC download
CY7C2564XV18-450BZXC
Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
DigiKey Programmable: Not Verified
Memory Organization: 2M x 36
Memory Interface: Parallel
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 450 MHz
Technology: SRAM - Synchronous, QDR II+
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 72Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
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IRGC100B120UB IRGC100B120UB_7-6-15.pdf
Hersteller: Infineon Technologies
Description: IGBT CHIP
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A
Supplier Device Package: Die
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Produkt ist nicht verfügbar
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2EDN7224GXTMA1
Hersteller: Infineon Technologies
Description: 2EDN7224G - GATE DRIVER
Part Status: Active
Packaging: Bulk
auf Bestellung 249668 Stücke:
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295+1.87 EUR
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2EDN7223FXTMA1
Hersteller: Infineon Technologies
Description: POWER SWITCH, TRANSMITTER, REC
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 54508 Stücke:
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503+1.19 EUR
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XMC1403Q040X0128AAXUMA1 Infineon-XMC1400-DS-v01_03-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2
XMC1403Q040X0128AAXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 40VQFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-40-17
Part Status: Active
Number of I/O: 27
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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1ED44173N01BXTSA1 infineon-1ed44173n01b-datasheet-en.pdf
1ED44173N01BXTSA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 8.6V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-SOT23-6-3
Rise / Fall Time (Typ): 5ns, 5ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.2V, 1.9V
Current - Peak Output (Source, Sink): 2.6A, 2.6A
Part Status: Active
DigiKey Programmable: Not Verified
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20+1.09 EUR
28+0.76 EUR
31+0.69 EUR
100+0.6 EUR
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1000+0.51 EUR
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2ED28073J06FXUMA1 Infineon-2ED28073J06F-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b7017181f76e671a4d
2ED28073J06FXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Current - Peak Output (Source, Sink): 20mA, 80mA
DigiKey Programmable: Not Verified
Logic Voltage - VIL, VIH: 0.8V, 2.2 V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
High Side Voltage - Max (Bootstrap): 600 V
Input Type: CMOS, TTL
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 125°C (TA)
Part Status: Active
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Rise / Fall Time (Typ): 1.5µs, 225ns
auf Bestellung 2434 Stücke:
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12+1.84 EUR
16+1.33 EUR
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1000+0.92 EUR
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TLE5014PROGKITTOBO1 Infineon-TLE5014-Eval_Kit%20and%20SatelliteBoard-v01_00-general_description-GS-v01_00-EN.pdf?fileId=5546d46264fee02f01651a11ee7375dd
TLE5014PROGKITTOBO1
Hersteller: Infineon Technologies
Description: EVALUATION BOARD FOR TLE5014
Contents: Board(s)
Part Status: Active
Supplied Contents: Board(s)
Utilized IC / Part: TLE5014
Sensor Type: Magnetic, GMR (Giant Magnetoresistive)
Packaging: Box
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BTN7970B INFNS11665-1.pdf?t.download=true&u=5oefqw
BTN7970B
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRVR 70A TO263-7
Features: Charge Pump, Status Flag
Packaging: Bulk
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 8V ~ 18V
Rds On (Typ): 9mOhm LS, 7mOhm HS
Applications: General Purpose
Current - Output / Channel: 70A
Current - Peak Output: 70A
Technology: DMOS
Voltage - Load: 8V ~ 18V
Supplier Device Package: PG-TO263-7-1
Fault Protection: Current Limiting, Over Current, Over Temperature, Over Voltage, Short Circuit
Load Type: Inductive
Part Status: Active
Produkt ist nicht verfügbar
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IGP01N120H2XKSA1 fundamentals-of-power-semiconductors
IGP01N120H2XKSA1
Hersteller: Infineon Technologies
Description: IGBT 1200V 3.2A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 1A
Supplier Device Package: PG-TO220-3-1
Td (on/off) @ 25°C: 13ns/370ns
Switching Energy: 140µJ
Test Condition: 800V, 1A, 241Ohm, 15V
Gate Charge: 8.6 nC
Current - Collector (Ic) (Max): 3.2 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 3.5 A
Power - Max: 28 W
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346+1.57 EUR
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IGP01N120H2 INFNS16255-1.pdf?t.download=true&u=5oefqw
IGP01N120H2
Hersteller: Infineon Technologies
Description: IGBT 1200V 3.2A 28W TO220-3
Input Type: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Power - Max: 28 W
Current - Collector Pulsed (Icm): 3.5 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 3.2 A
Part Status: Active
Gate Charge: 8.6 nC
Test Condition: 800V, 1A, 241Ohm, 15V
Switching Energy: 140µJ
Td (on/off) @ 25°C: 13ns/370ns
Supplier Device Package: PG-TO220-3-1
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 1A
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507+1.13 EUR
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SIGC76T60R3EX7SA1
SIGC76T60R3EX7SA1
Hersteller: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 150A
Supplier Device Package: Die
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 450 A
Produkt ist nicht verfügbar
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TLS850B0TBV33ATMA1 Infineon-TLS850B0TB%20V33-DS-v01_00-EN.pdf?fileId=5546d4625fe3678401600cf0f9cb6d40
TLS850B0TBV33ATMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR 3.3V PG-TO263-5-1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 25 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-5-1
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Grade: Automotive
Part Status: Active
PSRR: 63dB (100Hz)
Voltage Dropout (Max): 0.6V @ 250mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 33 µA
Qualification: AEC-Q100
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1000+2.19 EUR
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TLS850B0TBV33ATMA1 Infineon-TLS850B0TB%20V33-DS-v01_00-EN.pdf?fileId=5546d4625fe3678401600cf0f9cb6d40
TLS850B0TBV33ATMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR 3.3V PG-TO263-5-1
Packaging: Cut Tape (CT)
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 25 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-5-1
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Grade: Automotive
Part Status: Active
PSRR: 63dB (100Hz)
Voltage Dropout (Max): 0.6V @ 250mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 33 µA
Qualification: AEC-Q100
auf Bestellung 1744 Stücke:
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6+4.08 EUR
10+3.03 EUR
25+2.77 EUR
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AUIPS8121RTRLXSMA1
Hersteller: Infineon Technologies
Description: IR_HSS-LSS-GATEDRIVER
Produkt ist nicht verfügbar
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GATELEAD28134XPSA1
Hersteller: Infineon Technologies
Description: DUMMY 57
Produkt ist nicht verfügbar
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GATELEAD28128HPSA1
Hersteller: Infineon Technologies
Description: ACCY GATE LEAD FOR MODULE
Produkt ist nicht verfügbar
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GATELEAD28129HPSA1
Hersteller: Infineon Technologies
Description: ACCY GATE LEAD FOR MODULE
Produkt ist nicht verfügbar
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GATELEAD28133HPSA1
Hersteller: Infineon Technologies
Description: ACCY GATE LEAD FOR MODULE
Produkt ist nicht verfügbar
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GATELEAD30258HPSA1
Hersteller: Infineon Technologies
Description: ACCY GATE LEAD FOR MODULE
Produkt ist nicht verfügbar
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GATELEADL500G2K2XPSA1 Infineon-Gate%20%20leads%20for%20PB20-DS-v03_01-EN.pdf?fileId=5546d462525dbac401532c0b43cd707d
GATELEADL500G2K2XPSA1
Hersteller: Infineon Technologies
Description: ACCY GATE LEAD FOR MODULE
Produkt ist nicht verfügbar
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