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BTS5264SFXUMA1 Infineon Technologies Description: PMIC - POWER DISTRIBUTION SWITCH
Packaging: Bulk
Part Status: Active
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65+7.59 EUR
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TLE4470GXUMA2 TLE4470GXUMA2 Infineon Technologies Infineon-TLE4470-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc101595f72bf071f3a Description: IC REG LINEAR POS ADJ 14DSO
Control Features: Enable, Reset
Voltage - Output (Min/Fixed): 5V, (5V), Tracking
Voltage - Output (Max): 20V
Supplier Device Package: PG-DSO-14
Number of Regulators: 2
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 500 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 100mA, 250mA
Mounting Type: Surface Mount
Output Type: Adjustable (Fixed)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Current - Supply (Max): 15 mA
Protection Features: Over Current, Over Temperature, Short Circuit
Voltage Dropout (Max): 0.5V @ 100mA, 0.6V @ 200mA
PSRR: 60dB (20Hz ~ 20kHz)
Qualification: AEC-Q100
Grade: Automotive
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BCX68-16 BCX68-16 Infineon Technologies INFNS17218-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 20V 1A SOT89
Power - Max: 3 W
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: PG-SOT89
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Bulk
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BCX68-25 BCX68-25 Infineon Technologies INFNS17218-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL BIPOLAR TRANSISTOR
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BCX68-25E6327 BCX68-25E6327 Infineon Technologies INFNS12871-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL BIPOLAR TRANSISTOR
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BCX68-16E6327 BCX68-16E6327 Infineon Technologies INFNS12871-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Power - Max: 3 W
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: PG-SOT89-4-2
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Bulk
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BCX6816E6327HTSA1 BCX6816E6327HTSA1 Infineon Technologies bcx68.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589ef403903e7 Description: TRANS NPN 20V 1A PG-SOT89
Power - Max: 3 W
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: PG-SOT89
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Bulk
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BCX6816H6327XTSA1 BCX6816H6327XTSA1 Infineon Technologies bcx68.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589ef403903e7 Description: TRANS NPN 20V 1A PG-SOT89
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Bulk
Power - Max: 3 W
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 1 A
Part Status: Last Time Buy
Supplier Device Package: PG-SOT89
Qualification: AEC-Q101
Grade: Automotive
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BTS3118D BTS3118D Infineon Technologies INFNS11531-1.pdf?t.download=true&u=5oefqw Description: BTS3118 - HITFET, AUTOMOTIVE SMA
Part Status: Active
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Short Circuit
Supplier Device Package: PG-TO252-3-11
Ratio - Input:Output: 1:1
Current - Output (Max): 2.4A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 42V
Input Type: Non-Inverting
Rds On (Typ): 70mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Features: Slew Rate Controlled
Packaging: Bulk
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S26KS128SDGBHA030 S26KS128SDGBHA030 Infineon Technologies Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Description: IC FLASH 128MBIT HYPERBUS 24FBGA
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Memory Interface: HyperBus
Part Status: Active
Supplier Device Package: 24-FBGA (6x8)
Memory Format: FLASH
Clock Frequency: 133 MHz
Technology: FLASH - NOR
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 128Mbit
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Packaging: Tray
Memory Organization: 16M x 8
Access Time: 96 ns
Produkt ist nicht verfügbar
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BSZ0910NDXTMA1 BSZ0910NDXTMA1 Infineon Technologies Infineon-BSZ0910ND-DS-v02_00-EN.pdf?fileId=5546d462602a9dc8016054778b852cc4 Description: DIFFERENTIATED MOSFETS
Part Status: Obsolete
Supplier Device Package: PG-WISON-8
Vgs(th) (Max) @ Id: 2V @ 250µA
FET Feature: Logic Level Gate, 4.5V Drive
Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 25A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.9W (Ta), 31W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
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BSZ0910NDXTMA1 BSZ0910NDXTMA1 Infineon Technologies Infineon-BSZ0910ND-DS-v02_00-EN.pdf?fileId=5546d462602a9dc8016054778b852cc4 Description: DIFFERENTIATED MOSFETS
Part Status: Obsolete
Supplier Device Package: PG-WISON-8
Vgs(th) (Max) @ Id: 2V @ 250µA
FET Feature: Logic Level Gate, 4.5V Drive
Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 25A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.9W (Ta), 31W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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IPA052N08NM5SXKSA1 IPA052N08NM5SXKSA1 Infineon Technologies Infineon-IPA052N08NM5S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cfde8986e2a Description: MOSFET N-CH 80V 64A TO220
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-TO220 Full Pack
Vgs(th) (Max) @ Id: 3.8V @ 65µA
Power Dissipation (Max): 38W (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 32A, 10V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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4+4.47 EUR
50+2.22 EUR
100+2.01 EUR
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IRF150P220AKMA1 IRF150P220AKMA1 Infineon Technologies Infineon-IRF150P220-DataSheet-v01_01-EN.pdf?fileId=5546d46266a498f50166aca241ac65c9 Description: MOSFET N-CH 150V 203A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 203A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 556W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 265µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 75 V
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1+17.72 EUR
25+10.7 EUR
100+9.02 EUR
500+7.68 EUR
1000+7.25 EUR
2000+6.89 EUR
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IRF150P221AKMA1 IRF150P221AKMA1 Infineon Technologies Infineon-IRF150P221-DataSheet-v01_01-EN.pdf?fileId=5546d46266a498f50166acab699365cd Description: MOSFET N-CH 150V 186A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 186A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 264µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 75 V
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25+5.94 EUR
100+4.95 EUR
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PBL38621/2SOT PBL38621/2SOT Infineon Technologies fundamentals-of-power-semiconductors Description: IC TELECOM INTERFACE PDSO-24
Packaging: Bulk
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 2.8mA
Supplier Device Package: PG-DSO-24-8
Number of Circuits: 1
Power (Watts): 290 mW
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PBL38620/2SHA PBL38620/2SHA Infineon Technologies PBL38620%2C2%20v2.pdf Description: IC TELECOM INTERFACE 24-SSOP
Packaging: Bulk
Package / Case: 24-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 2.8mA
Supplier Device Package: PG-SSOP-24-1
Part Status: Obsolete
Number of Circuits: 1
Power (Watts): 290 mW
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CY7C1382B-133AC CY7C1382B-133AC Infineon Technologies CY7C1380B%2C%201382B.pdf Description: IC SRAM 18MBIT 133MHZ 100LQFP
Packaging: Bag
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 4.2 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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20+25.15 EUR
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BSP321PH6327XTSA1 BSP321PH6327XTSA1 Infineon Technologies Infineon-BSP321P-DS-v01_06-en.pdf?fileId=db3a30433b47825b013b605d0e215a39 Description: MOSFET P-CH 100V 980MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 980mA (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 980mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 380µA
Supplier Device Package: PG-SOT223-4
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 319 pF @ 25 V
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100+0.97 EUR
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BTS500251TADATMA1 BTS500251TADATMA1 Infineon Technologies Infineon-BTS50025-1TAD-DS-v01_01-EN.pdf?fileId=5546d4625b62cd8a015baf36cff24613 Description: IC PWR SWITCH N-CHAN 1:1 TO263-7
Part Status: Obsolete
Fault Protection: Over Temperature, Over Voltage, Reverse Battery, Short Circuit
Supplier Device Package: P/PG-TO-263-7-10
Ratio - Input:Output: 1:1
Current - Output (Max): 25A
Qualification: AEC-Q100
Grade: Automotive
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 8V ~ 18V
Input Type: Non-Inverting
Rds On (Typ): 3.9mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MB90F349CEPF-G-N2E1 MB90F349CEPF-G-N2E1 Infineon Technologies Description: IC MCU 16BIT 256KB FLASH 100QFP
DigiKey Programmable: Not Verified
Number of I/O: 80
Part Status: Obsolete
Supplier Device Package: 100-QFP (14x20)
Peripherals: DMA, POR, WDT
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SCI, UART/USART
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 24x8/10b
Core Processor: F²MC-16LX
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 100-BQFP
Packaging: Bulk
Produkt ist nicht verfügbar
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MB90F349CESPMC-G-N9E1 MB90F349CESPMC-G-N9E1 Infineon Technologies Description: IC MCU 16BIT 256KB FLASH 100LQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 24x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SCI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 100-LQFP (14x14)
Part Status: Obsolete
Number of I/O: 82
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BSZ039N06NSATMA1 BSZ039N06NSATMA1 Infineon Technologies Infineon-BSZ039N06NS-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a53c25c8e532d Description: MOSFET N-CH 60V 18A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 36µA
Supplier Device Package: PG-TSDSON-8-34
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 30 V
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5000+1.12 EUR
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SPP35N10 SPP35N10 Infineon Technologies SPI%2CSPP35N10.pdf Description: MOSFET N-CH 100V 35A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 26.4A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 83µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V
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278+1.6 EUR
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IPB35N10S3L26ATMA1 IPB35N10S3L26ATMA1 Infineon Technologies Infineon-IPB35N10S3L_26-DS-v01_01-en.pdf?fileId=db3a304330046413013008a994583e77 Description: MOSFET N-CH 100V 35A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 26.3mOhm @ 35A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 39µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Qualification: AEC-Q101
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1000+1.55 EUR
2000+1.45 EUR
3000+1.39 EUR
5000+1.33 EUR
7000+1.31 EUR
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IPB35N10S3L26ATMA1 IPB35N10S3L26ATMA1 Infineon Technologies Infineon-IPB35N10S3L_26-DS-v01_01-en.pdf?fileId=db3a304330046413013008a994583e77 Description: MOSFET N-CH 100V 35A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 26.3mOhm @ 35A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 39µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Qualification: AEC-Q101
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TLS810D1LDV33BOARDTOBO1 TLS810D1LDV33BOARDTOBO1 Infineon Technologies Infineon-Z8F55443029_TLS805x1LD-TLS810x1LD-Demoboard-UserManual-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a46f9d9c8037f Description: EVAL BOARD FOR TLS810D1LDV33
Packaging: Box
Voltage - Output: 3.3V
Voltage - Input: 3V ~ 42V
Current - Output: 100mA
Contents: Board(s)
Regulator Type: Positive Fixed
Utilized IC / Part: TLS810D1LDV33
Channels per IC: 1 - Single
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CY9AF131KAPMC-G-SNE2 CY9AF131KAPMC-G-SNE2 Infineon Technologies Description: IC MCU 32BIT 64KB FLASH 48LQFP
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 8K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 20MHz
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 37
Supplier Device Package: 48-LQFP (7x7)
Peripherals: LVD, POR, PWM, WDT
Connectivity: CSIO, I2C, UART/USART
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 6x12b
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Produkt ist nicht verfügbar
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BUZ77B Infineon Technologies INFNS01334-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 25 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
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IPU80R2K8CEAKMA1 IPU80R2K8CEAKMA1 Infineon Technologies Infineon-IPX80R2K8CE-DS-v02_01-en.pdf?fileId=db3a304340155f3d01402f5e5f1f274f Description: MOSFET N-CH 800V 1.9A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 1.1A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 120µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 100 V
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IPU80R2K8CEAKMA1 IPU80R2K8CEAKMA1 Infineon Technologies Infineon-IPX80R2K8CE-DS-v02_01-en.pdf?fileId=db3a304340155f3d01402f5e5f1f274f Description: MOSFET N-CH 800V 1.9A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 1.1A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 120µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 100 V
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IPU80R1K4CEAKMA1 IPU80R1K4CEAKMA1 Infineon Technologies Infineon-IPX80R1K4CE-DS-v02_01-en.pdf?fileId=db3a304340155f3d01402f3b471926eb Description: MOSFET N-CH 800V 3.9A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.3A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 240µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V
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IPU80R1K0CEBKMA1 IPU80R1K0CEBKMA1 Infineon Technologies Infineon-IPX80R1K0CE-DS-v02_01-en.pdf?fileId=db3a304340155f3d01402ebac5992590 Description: MOSFET N-CH 800V 5.7A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: PG-TO251-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V
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IPU80R1K0CEAKMA1 IPU80R1K0CEAKMA1 Infineon Technologies Infineon-IPX80R1K0CE-DS-v02_01-en.pdf?fileId=db3a304340155f3d01402ebac5992590 Description: MOSFET N-CH 800V 5.7A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO251-3-341
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Bulk
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IPU80R1K0CEAKMA1 IPU80R1K0CEAKMA1 Infineon Technologies Infineon-IPX80R1K0CE-DS-v02_01-en.pdf?fileId=db3a304340155f3d01402ebac5992590 Description: MOSFET N-CH 800V 5.7A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: PG-TO251-3-341
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V
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DEMOBGT60LTR11AIPTOBO1 DEMOBGT60LTR11AIPTOBO1 Infineon Technologies Infineon-UG133733_BGT60LTR11AIP_EBG_shield-UserManual-v01_20-EN.pdf?fileId=8ac78c8c872bd8d6018751c0ea39605c Description: EVAL BOARD FOR BGT60LTR11AIP
Packaging: Box
For Use With/Related Products: BGT60LTR11AIP
Frequency: 60GHz
Type: Transceiver; RADAR
Supplied Contents: Board(s)
Part Status: Active
Sensitivity: 60GHz
Sensor Type: Radar
Utilized IC / Part: BGT60LTR11AIP
Sensing Range: 7m
Contents: Board(s)
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PEF 22554 E V2.1 Infineon Technologies PEF22554_V3.1_PB_Rev3.0.pdf Description: IC TELECOM INTERFACE 160LBGA
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PEF 22554 E V2.1-G Infineon Technologies PEF22554_V3.1_PB_Rev3.0.pdf Description: IC TELECOM INTERFACE 160LBGA
Packaging: Tray
Package / Case: 160-LBGA
Mounting Type: Surface Mount
Function: Framer, Line Interface Unit (LIU)
Interface: E1, HDLC, J1, T1
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V, 3.3V
Supplier Device Package: P/PG-LBGA-160-1
Number of Circuits: 4
Produkt ist nicht verfügbar
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BCR430UXTSA2 BCR430UXTSA2 Infineon Technologies Infineon-BCR%20430U-DataSheet-v01_03-EN.pdf?fileId=5546d4627506bb32017541202bc15395 Description: IC LED DRV LIN PWM 100MA SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Voltage - Output: 42V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: LED Lighting
Current - Output / Channel: 100mA
Internal Switch(s): No
Topology: Constant Current
Supplier Device Package: PG-SOT23-6-1
Dimming: PWM
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 42V
Part Status: Active
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ISZ065N03L5SATMA1 ISZ065N03L5SATMA1 Infineon Technologies Infineon-ISZ065N03L5S-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8cb687b0994 Description: MOSFET N-CH 30V 12A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 15 V
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BSZ0909LSATMA1 BSZ0909LSATMA1 Infineon Technologies Infineon-BSZ0909LS-DataSheet-v02_00-EN.pdf?fileId=5546d46271bf4f9201720e9f226c7cdc Description: MOSFET N-CH 30V 19A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
Produkt ist nicht verfügbar
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ISZ0501NLSATMA1 ISZ0501NLSATMA1 Infineon Technologies Infineon-ISZ0501NLS-DataSheet-v02_00-EN.pdf?fileId=5546d4626fc1ce0b016ff0ac1554515f Description: 25V, N-CH MOSFET, LOGIC LEVEL, P
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-25
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 12 V
Produkt ist nicht verfügbar
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BSO615CGXUMA1 BSO615CGXUMA1 Infineon Technologies Infineon-BSO615CG-DS-v02_01-en.pdf?fileId=db3a304412b407950112b435049f6230 Description: MOSFET N/P-CH 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), 2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V, 460pF @ 25V
Rds On (Max) @ Id, Vgs: 110mOhm @ 3.1A, 10V, 300mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V, 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 20µA, 2V @ 450µA
Supplier Device Package: PG-DSO-8
Part Status: Last Time Buy
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2EDL8024GXUMA1 2EDL8024GXUMA1 Infineon Technologies Infineon-2EDL8X2X-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837ff6a7de184a Description: IC GATE DRVR HI/LOW SIDE 8VDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 90 V
Supplier Device Package: PG-VDSON-8-4
Rise / Fall Time (Typ): 45ns, 45ns
Channel Type: Independent
Driven Configuration: High-Side, Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
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IQE013N04LM6ATMA1 IQE013N04LM6ATMA1 Infineon Technologies Infineon-IQE013N04LM6-DataSheet-v02_00-EN.pdf?fileId=5546d46272e49d2a01735298bd175b06 Description: MOSFET N-CH 40V 31A/205A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 20 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TSON-8-4
Vgs(th) (Max) @ Id: 2V @ 51µA
Power Dissipation (Max): 2.5W (Ta), 107W (Tc)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 205A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
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BSC0402NSATMA1 BSC0402NSATMA1 Infineon Technologies Infineon-BSC0402NS-DataSheet-v02_01-EN.pdf?fileId=5546d462700c0ae6017015d4682a2212 Description: MOSFET N-CH 150V 80A TDSON-8
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 40A, 10
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-7
Vgs(th) (Max) @ Id: 4.6V @ 107µA
Power Dissipation (Max): 139W (Tc)
Produkt ist nicht verfügbar
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IPDD60R170CFD7XTMA1 IPDD60R170CFD7XTMA1 Infineon Technologies Infineon-IPDD60R170CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751c2e907f42b4 Description: MOSFET N-CH 600V 19A HDSOP-10
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1016 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-HDSOP-10-1
Vgs(th) (Max) @ Id: 4.5V @ 240µA
Power Dissipation (Max): 137W (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 4.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Produkt ist nicht verfügbar
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IST007N04NM6AUMA1 IST007N04NM6AUMA1 Infineon Technologies Infineon-IST007N04NM6-DataSheet-v02_00-EN.pdf?fileId=5546d46272e49d2a0172eb7e0dfd741d Description: MOSFET N-CH 40V 54A/440A HSOF-5
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Ta), 440A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 20 V
Produkt ist nicht verfügbar
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IPDD60R090CFD7XTMA1 IPDD60R090CFD7XTMA1 Infineon Technologies Infineon-IPDD60R090CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751c00c6f04251 Description: MOSFET N-CH 600V 33A HDSOP-10
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-HDSOP-10-1
Vgs(th) (Max) @ Id: 4.5V @ 470µA
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 9.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1747 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Produkt ist nicht verfügbar
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KP212K1409XTMA1 KP212K1409XTMA1 Infineon Technologies Infineon-KP212K1409-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb3201754116ad5a5370 Description: SENSOR 16.68PSIA 4.65V DSOF8
Packaging: Tape & Reel (TR)
Features: Amplified Output, Temperature Compensated
Package / Case: 8-SMD Module
Output Type: Analog Voltage
Mounting Type: Surface Mount
Output: 0.4 V ~ 4.65 V
Operating Pressure: 1.45PSI ~ 16.68PSI (10kPa ~ 115kPa)
Pressure Type: Absolute
Accuracy: ±0.3PSI (±2.07kPa)
Operating Temperature: -40°C ~ 125°C (TA)
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: PG-DSOF-8-16
Port Style: No Port
Maximum Pressure: 21.76PSI (150kPa)
Grade: Automotive
Qualification: AEC-Q100
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KP212F1701XTMA1 KP212F1701XTMA1 Infineon Technologies Infineon-KP212F1701-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb320175410daf8b536d Description: SENSOR 16.68PSIA 4.5V DSOF8
Qualification: AEC-Q100
Grade: Automotive
Part Status: Active
Maximum Pressure: 21.76PSI (150kPa)
Port Style: No Port
Supplier Device Package: PG-DSOF-8-16
Voltage - Supply: 4.5V ~ 5.5V
Termination Style: SMD (SMT) Tab
Operating Temperature: -40°C ~ 125°C (TA)
Accuracy: ±0.29PSI (±2kPa)
Pressure Type: Absolute
Operating Pressure: 2.18PSI ~ 16.68PSI (15kPa ~ 115kPa)
Output: 0.5 V ~ 4.5 V
Mounting Type: Surface Mount
Output Type: Analog Voltage
Package / Case: 8-SMD Module
Features: Amplified Output, Temperature Compensated
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPT60R045CFD7XTMA1 IPT60R045CFD7XTMA1 Infineon Technologies Infineon-IPT60R045CFD7-DataSheet-v02_01-EN.pdf?fileId=5546d46271bf4f920171df2a61cc30ec Description: MOSFET N-CH 600V 52A 8HSOF
Input Capacitance (Ciss) (Max) @ Vds: 3194 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-HSOF-8-2
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Power Dissipation (Max): 270W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
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2000+5.08 EUR
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IDFW80C65D1XKSA1 IDFW80C65D1XKSA1 Infineon Technologies Infineon-IDFW80C65D1-DataSheet-v02_02-EN.pdf?fileId=5546d46274cf54d50174da579c702296 Description: DIODE ARR GP 650V 74A TO247-3-AI
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 73 ns
Technology: Standard
Current - Average Rectified (Io): 74A
Supplier Device Package: PG-TO247-3-AI
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 40 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 74A
Produkt ist nicht verfügbar
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BSP88L6327 BSP88L6327 Infineon Technologies INFNS13392-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 350mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 108µA
Supplier Device Package: PG-SOT223-4-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 95 pF @ 25 V
Produkt ist nicht verfügbar
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IPS05N03LA G IPS05N03LA G Infineon Technologies IP(D,F,S,U)05N03LA_G.pdf Description: MOSFET N-CH 25V 50A TO251-3
Produkt ist nicht verfügbar
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IPS05N03LB G IPS05N03LB G Infineon Technologies IPD05N03LB_v1.7_G.pdf Description: MOSFET N-CH 30V 90A TO251-3
Produkt ist nicht verfügbar
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IRLI540N IRLI540N Infineon Technologies Infineon-IRLI540N-DS-v01_02-EN.pdf?fileId=5546d462533600a401535664018125c1 Description: MOSFET N-CH 100V 23A TO220AB FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 12A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO220-FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Produkt ist nicht verfügbar
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BSP320SL6433 BSP320SL6433 Infineon Technologies INFNS15379-1.pdf?t.download=true&u=5oefqw Description: SMALL-SIGNAL N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Tj)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.9A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: PG-SOT223-4-21
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
Qualification: AEC-Q101
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945+0.48 EUR
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BSP320SL6327 BSP320SL6327 Infineon Technologies INFNS15379-1.pdf?t.download=true&u=5oefqw Description: SMALL-SIGNAL N-CHANNEL MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-SOT223-4-21
Vgs(th) (Max) @ Id: 4V @ 20µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Bulk
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1385+0.37 EUR
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BSP320S E6327 BSP320S E6327 Infineon Technologies dgdl?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30433b47825b013b515cf1f42949 Description: MOSFET N-CH 60V 2.9A SOT223-4
Qualification: AEC-Q101
Grade: Automotive
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-SOT223-4
Vgs(th) (Max) @ Id: 4V @ 20µA
Produkt ist nicht verfügbar
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BTS5264SFXUMA1
Hersteller: Infineon Technologies
Description: PMIC - POWER DISTRIBUTION SWITCH
Packaging: Bulk
Part Status: Active
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AnzahlPreis
65+7.59 EUR
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TLE4470GXUMA2 Infineon-TLE4470-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc101595f72bf071f3a
TLE4470GXUMA2
Hersteller: Infineon Technologies
Description: IC REG LINEAR POS ADJ 14DSO
Control Features: Enable, Reset
Voltage - Output (Min/Fixed): 5V, (5V), Tracking
Voltage - Output (Max): 20V
Supplier Device Package: PG-DSO-14
Number of Regulators: 2
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 500 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 100mA, 250mA
Mounting Type: Surface Mount
Output Type: Adjustable (Fixed)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Current - Supply (Max): 15 mA
Protection Features: Over Current, Over Temperature, Short Circuit
Voltage Dropout (Max): 0.5V @ 100mA, 0.6V @ 200mA
PSRR: 60dB (20Hz ~ 20kHz)
Qualification: AEC-Q100
Grade: Automotive
Produkt ist nicht verfügbar
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BCX68-16 INFNS17218-1.pdf?t.download=true&u=5oefqw
BCX68-16
Hersteller: Infineon Technologies
Description: TRANS NPN 20V 1A SOT89
Power - Max: 3 W
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: PG-SOT89
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Bulk
Produkt ist nicht verfügbar
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BCX68-25 INFNS17218-1.pdf?t.download=true&u=5oefqw
BCX68-25
Hersteller: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
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BCX68-25E6327 INFNS12871-1.pdf?t.download=true&u=5oefqw
BCX68-25E6327
Hersteller: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
auf Bestellung 2975 Stücke:
Lieferzeit 10-14 Tag (e)
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BCX68-16E6327 INFNS12871-1.pdf?t.download=true&u=5oefqw
BCX68-16E6327
Hersteller: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Power - Max: 3 W
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: PG-SOT89-4-2
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Bulk
Produkt ist nicht verfügbar
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BCX6816E6327HTSA1 bcx68.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589ef403903e7
BCX6816E6327HTSA1
Hersteller: Infineon Technologies
Description: TRANS NPN 20V 1A PG-SOT89
Power - Max: 3 W
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: PG-SOT89
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Bulk
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AnzahlPreis
1598+0.32 EUR
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BCX6816H6327XTSA1 bcx68.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589ef403903e7
BCX6816H6327XTSA1
Hersteller: Infineon Technologies
Description: TRANS NPN 20V 1A PG-SOT89
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Bulk
Power - Max: 3 W
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 1 A
Part Status: Last Time Buy
Supplier Device Package: PG-SOT89
Qualification: AEC-Q101
Grade: Automotive
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AnzahlPreis
1224+0.42 EUR
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BTS3118D INFNS11531-1.pdf?t.download=true&u=5oefqw
BTS3118D
Hersteller: Infineon Technologies
Description: BTS3118 - HITFET, AUTOMOTIVE SMA
Part Status: Active
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Short Circuit
Supplier Device Package: PG-TO252-3-11
Ratio - Input:Output: 1:1
Current - Output (Max): 2.4A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 42V
Input Type: Non-Inverting
Rds On (Typ): 70mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Features: Slew Rate Controlled
Packaging: Bulk
Produkt ist nicht verfügbar
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S26KS128SDGBHA030 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
S26KS128SDGBHA030
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT HYPERBUS 24FBGA
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Memory Interface: HyperBus
Part Status: Active
Supplier Device Package: 24-FBGA (6x8)
Memory Format: FLASH
Clock Frequency: 133 MHz
Technology: FLASH - NOR
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 128Mbit
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Packaging: Tray
Memory Organization: 16M x 8
Access Time: 96 ns
Produkt ist nicht verfügbar
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BSZ0910NDXTMA1 Infineon-BSZ0910ND-DS-v02_00-EN.pdf?fileId=5546d462602a9dc8016054778b852cc4
BSZ0910NDXTMA1
Hersteller: Infineon Technologies
Description: DIFFERENTIATED MOSFETS
Part Status: Obsolete
Supplier Device Package: PG-WISON-8
Vgs(th) (Max) @ Id: 2V @ 250µA
FET Feature: Logic Level Gate, 4.5V Drive
Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 25A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.9W (Ta), 31W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
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BSZ0910NDXTMA1 Infineon-BSZ0910ND-DS-v02_00-EN.pdf?fileId=5546d462602a9dc8016054778b852cc4
BSZ0910NDXTMA1
Hersteller: Infineon Technologies
Description: DIFFERENTIATED MOSFETS
Part Status: Obsolete
Supplier Device Package: PG-WISON-8
Vgs(th) (Max) @ Id: 2V @ 250µA
FET Feature: Logic Level Gate, 4.5V Drive
Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 25A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.9W (Ta), 31W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
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IPA052N08NM5SXKSA1 Infineon-IPA052N08NM5S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cfde8986e2a
IPA052N08NM5SXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 64A TO220
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-TO220 Full Pack
Vgs(th) (Max) @ Id: 3.8V @ 65µA
Power Dissipation (Max): 38W (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 32A, 10V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 249 Stücke:
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AnzahlPreis
4+4.47 EUR
50+2.22 EUR
100+2.01 EUR
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IRF150P220AKMA1 Infineon-IRF150P220-DataSheet-v01_01-EN.pdf?fileId=5546d46266a498f50166aca241ac65c9
IRF150P220AKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 203A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 203A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 556W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 265µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 75 V
auf Bestellung 6770 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+17.72 EUR
25+10.7 EUR
100+9.02 EUR
500+7.68 EUR
1000+7.25 EUR
2000+6.89 EUR
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IRF150P221AKMA1 Infineon-IRF150P221-DataSheet-v01_01-EN.pdf?fileId=5546d46266a498f50166acab699365cd
IRF150P221AKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 186A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 186A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 264µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 75 V
auf Bestellung 253 Stücke:
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AnzahlPreis
2+10.08 EUR
25+5.94 EUR
100+4.95 EUR
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PBL38621/2SOT fundamentals-of-power-semiconductors
PBL38621/2SOT
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE PDSO-24
Packaging: Bulk
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 2.8mA
Supplier Device Package: PG-DSO-24-8
Number of Circuits: 1
Power (Watts): 290 mW
auf Bestellung 393 Stücke:
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AnzahlPreis
94+4.83 EUR
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PBL38620/2SHA PBL38620%2C2%20v2.pdf
PBL38620/2SHA
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE 24-SSOP
Packaging: Bulk
Package / Case: 24-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 2.8mA
Supplier Device Package: PG-SSOP-24-1
Part Status: Obsolete
Number of Circuits: 1
Power (Watts): 290 mW
auf Bestellung 78000 Stücke:
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AnzahlPreis
80+5.99 EUR
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CY7C1382B-133AC CY7C1380B%2C%201382B.pdf
CY7C1382B-133AC
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT 133MHZ 100LQFP
Packaging: Bag
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 4.2 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
auf Bestellung 295 Stücke:
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AnzahlPreis
20+25.15 EUR
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BSP321PH6327XTSA1 Infineon-BSP321P-DS-v01_06-en.pdf?fileId=db3a30433b47825b013b605d0e215a39
BSP321PH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 100V 980MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 980mA (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 980mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 380µA
Supplier Device Package: PG-SOT223-4
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 319 pF @ 25 V
auf Bestellung 371 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
8+2.32 EUR
12+1.47 EUR
100+0.97 EUR
Mindestbestellmenge: 8 Stücke
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BTS500251TADATMA1 Infineon-BTS50025-1TAD-DS-v01_01-EN.pdf?fileId=5546d4625b62cd8a015baf36cff24613
BTS500251TADATMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO263-7
Part Status: Obsolete
Fault Protection: Over Temperature, Over Voltage, Reverse Battery, Short Circuit
Supplier Device Package: P/PG-TO-263-7-10
Ratio - Input:Output: 1:1
Current - Output (Max): 25A
Qualification: AEC-Q100
Grade: Automotive
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 8V ~ 18V
Input Type: Non-Inverting
Rds On (Typ): 3.9mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MB90F349CEPF-G-N2E1
MB90F349CEPF-G-N2E1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 256KB FLASH 100QFP
DigiKey Programmable: Not Verified
Number of I/O: 80
Part Status: Obsolete
Supplier Device Package: 100-QFP (14x20)
Peripherals: DMA, POR, WDT
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SCI, UART/USART
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 24x8/10b
Core Processor: F²MC-16LX
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 100-BQFP
Packaging: Bulk
Produkt ist nicht verfügbar
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MB90F349CESPMC-G-N9E1
MB90F349CESPMC-G-N9E1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 256KB FLASH 100LQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 24x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SCI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 100-LQFP (14x14)
Part Status: Obsolete
Number of I/O: 82
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BSZ039N06NSATMA1 Infineon-BSZ039N06NS-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a53c25c8e532d
BSZ039N06NSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 18A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 36µA
Supplier Device Package: PG-TSDSON-8-34
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 30 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5000+1.12 EUR
Mindestbestellmenge: 5000 Stücke
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SPP35N10 SPI%2CSPP35N10.pdf
SPP35N10
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 35A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 26.4A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 83µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V
auf Bestellung 30405 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
278+1.6 EUR
Mindestbestellmenge: 278 Stücke
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IPB35N10S3L26ATMA1 Infineon-IPB35N10S3L_26-DS-v01_01-en.pdf?fileId=db3a304330046413013008a994583e77
IPB35N10S3L26ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 35A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 26.3mOhm @ 35A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 39µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1000+1.55 EUR
2000+1.45 EUR
3000+1.39 EUR
5000+1.33 EUR
7000+1.31 EUR
Mindestbestellmenge: 1000 Stücke
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IPB35N10S3L26ATMA1 Infineon-IPB35N10S3L_26-DS-v01_01-en.pdf?fileId=db3a304330046413013008a994583e77
IPB35N10S3L26ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 35A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 26.3mOhm @ 35A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 39µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 7012 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4+4.66 EUR
10+3.02 EUR
100+2.08 EUR
500+1.68 EUR
Mindestbestellmenge: 4 Stücke
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TLS810D1LDV33BOARDTOBO1 Infineon-Z8F55443029_TLS805x1LD-TLS810x1LD-Demoboard-UserManual-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a46f9d9c8037f
TLS810D1LDV33BOARDTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR TLS810D1LDV33
Packaging: Box
Voltage - Output: 3.3V
Voltage - Input: 3V ~ 42V
Current - Output: 100mA
Contents: Board(s)
Regulator Type: Positive Fixed
Utilized IC / Part: TLS810D1LDV33
Channels per IC: 1 - Single
auf Bestellung 3 Stücke:
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AnzahlPreis
1+92.73 EUR
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CY9AF131KAPMC-G-SNE2
CY9AF131KAPMC-G-SNE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 48LQFP
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 8K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 20MHz
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 37
Supplier Device Package: 48-LQFP (7x7)
Peripherals: LVD, POR, PWM, WDT
Connectivity: CSIO, I2C, UART/USART
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 6x12b
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Produkt ist nicht verfügbar
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BUZ77B INFNS01334-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 25 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Produkt ist nicht verfügbar
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IPU80R2K8CEAKMA1 Infineon-IPX80R2K8CE-DS-v02_01-en.pdf?fileId=db3a304340155f3d01402f5e5f1f274f
IPU80R2K8CEAKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 1.9A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 1.1A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 120µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 100 V
auf Bestellung 14499 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
586+0.77 EUR
Mindestbestellmenge: 586 Stücke
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IPU80R2K8CEAKMA1 Infineon-IPX80R2K8CE-DS-v02_01-en.pdf?fileId=db3a304340155f3d01402f5e5f1f274f
IPU80R2K8CEAKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 1.9A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 1.1A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 120µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 100 V
Produkt ist nicht verfügbar
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IPU80R1K4CEAKMA1 Infineon-IPX80R1K4CE-DS-v02_01-en.pdf?fileId=db3a304340155f3d01402f3b471926eb
IPU80R1K4CEAKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 3.9A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.3A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 240µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V
Produkt ist nicht verfügbar
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IPU80R1K0CEBKMA1 Infineon-IPX80R1K0CE-DS-v02_01-en.pdf?fileId=db3a304340155f3d01402ebac5992590
IPU80R1K0CEBKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 5.7A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: PG-TO251-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V
auf Bestellung 1410 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
354+1.29 EUR
Mindestbestellmenge: 354 Stücke
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IPU80R1K0CEAKMA1 Infineon-IPX80R1K0CE-DS-v02_01-en.pdf?fileId=db3a304340155f3d01402ebac5992590
IPU80R1K0CEAKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 5.7A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO251-3-341
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Bulk
auf Bestellung 124500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
253+1.8 EUR
Mindestbestellmenge: 253 Stücke
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IPU80R1K0CEAKMA1 Infineon-IPX80R1K0CE-DS-v02_01-en.pdf?fileId=db3a304340155f3d01402ebac5992590
IPU80R1K0CEAKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 5.7A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: PG-TO251-3-341
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V
Produkt ist nicht verfügbar
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DEMOBGT60LTR11AIPTOBO1 Infineon-UG133733_BGT60LTR11AIP_EBG_shield-UserManual-v01_20-EN.pdf?fileId=8ac78c8c872bd8d6018751c0ea39605c
DEMOBGT60LTR11AIPTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR BGT60LTR11AIP
Packaging: Box
For Use With/Related Products: BGT60LTR11AIP
Frequency: 60GHz
Type: Transceiver; RADAR
Supplied Contents: Board(s)
Part Status: Active
Sensitivity: 60GHz
Sensor Type: Radar
Utilized IC / Part: BGT60LTR11AIP
Sensing Range: 7m
Contents: Board(s)
auf Bestellung 31 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+217.8 EUR
10+217.31 EUR
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PEF 22554 E V2.1 PEF22554_V3.1_PB_Rev3.0.pdf
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE 160LBGA
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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PEF 22554 E V2.1-G PEF22554_V3.1_PB_Rev3.0.pdf
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE 160LBGA
Packaging: Tray
Package / Case: 160-LBGA
Mounting Type: Surface Mount
Function: Framer, Line Interface Unit (LIU)
Interface: E1, HDLC, J1, T1
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V, 3.3V
Supplier Device Package: P/PG-LBGA-160-1
Number of Circuits: 4
Produkt ist nicht verfügbar
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BCR430UXTSA2 Infineon-BCR%20430U-DataSheet-v01_03-EN.pdf?fileId=5546d4627506bb32017541202bc15395
BCR430UXTSA2
Hersteller: Infineon Technologies
Description: IC LED DRV LIN PWM 100MA SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Voltage - Output: 42V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: LED Lighting
Current - Output / Channel: 100mA
Internal Switch(s): No
Topology: Constant Current
Supplier Device Package: PG-SOT23-6-1
Dimming: PWM
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 42V
Part Status: Active
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.21 EUR
6000+0.2 EUR
Mindestbestellmenge: 3000 Stücke
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ISZ065N03L5SATMA1 Infineon-ISZ065N03L5S-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8cb687b0994
ISZ065N03L5SATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 12A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 15 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5000+0.28 EUR
Mindestbestellmenge: 5000 Stücke
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BSZ0909LSATMA1 Infineon-BSZ0909LS-DataSheet-v02_00-EN.pdf?fileId=5546d46271bf4f9201720e9f226c7cdc
BSZ0909LSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 19A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
Produkt ist nicht verfügbar
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ISZ0501NLSATMA1 Infineon-ISZ0501NLS-DataSheet-v02_00-EN.pdf?fileId=5546d4626fc1ce0b016ff0ac1554515f
ISZ0501NLSATMA1
Hersteller: Infineon Technologies
Description: 25V, N-CH MOSFET, LOGIC LEVEL, P
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-25
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 12 V
Produkt ist nicht verfügbar
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BSO615CGXUMA1 Infineon-BSO615CG-DS-v02_01-en.pdf?fileId=db3a304412b407950112b435049f6230
BSO615CGXUMA1
Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), 2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V, 460pF @ 25V
Rds On (Max) @ Id, Vgs: 110mOhm @ 3.1A, 10V, 300mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V, 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 20µA, 2V @ 450µA
Supplier Device Package: PG-DSO-8
Part Status: Last Time Buy
auf Bestellung 17500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2500+0.89 EUR
5000+0.84 EUR
12500+0.81 EUR
Mindestbestellmenge: 2500 Stücke
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2EDL8024GXUMA1 Infineon-2EDL8X2X-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837ff6a7de184a
2EDL8024GXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8VDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 90 V
Supplier Device Package: PG-VDSON-8-4
Rise / Fall Time (Typ): 45ns, 45ns
Channel Type: Independent
Driven Configuration: High-Side, Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
6000+1.07 EUR
Mindestbestellmenge: 6000 Stücke
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IQE013N04LM6ATMA1 Infineon-IQE013N04LM6-DataSheet-v02_00-EN.pdf?fileId=5546d46272e49d2a01735298bd175b06
IQE013N04LM6ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 31A/205A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 20 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TSON-8-4
Vgs(th) (Max) @ Id: 2V @ 51µA
Power Dissipation (Max): 2.5W (Ta), 107W (Tc)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 205A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5000+1.53 EUR
Mindestbestellmenge: 5000 Stücke
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BSC0402NSATMA1 Infineon-BSC0402NS-DataSheet-v02_01-EN.pdf?fileId=5546d462700c0ae6017015d4682a2212
BSC0402NSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 80A TDSON-8
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 40A, 10
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-7
Vgs(th) (Max) @ Id: 4.6V @ 107µA
Power Dissipation (Max): 139W (Tc)
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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IPDD60R170CFD7XTMA1 Infineon-IPDD60R170CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751c2e907f42b4
IPDD60R170CFD7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 19A HDSOP-10
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1016 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-HDSOP-10-1
Vgs(th) (Max) @ Id: 4.5V @ 240µA
Power Dissipation (Max): 137W (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 4.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1700 Stücke
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IST007N04NM6AUMA1 Infineon-IST007N04NM6-DataSheet-v02_00-EN.pdf?fileId=5546d46272e49d2a0172eb7e0dfd741d
IST007N04NM6AUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 54A/440A HSOF-5
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Ta), 440A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 20 V
Produkt ist nicht verfügbar
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IPDD60R090CFD7XTMA1 Infineon-IPDD60R090CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751c00c6f04251
IPDD60R090CFD7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 33A HDSOP-10
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-HDSOP-10-1
Vgs(th) (Max) @ Id: 4.5V @ 470µA
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 9.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1747 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1700 Stücke
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KP212K1409XTMA1 Infineon-KP212K1409-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb3201754116ad5a5370
KP212K1409XTMA1
Hersteller: Infineon Technologies
Description: SENSOR 16.68PSIA 4.65V DSOF8
Packaging: Tape & Reel (TR)
Features: Amplified Output, Temperature Compensated
Package / Case: 8-SMD Module
Output Type: Analog Voltage
Mounting Type: Surface Mount
Output: 0.4 V ~ 4.65 V
Operating Pressure: 1.45PSI ~ 16.68PSI (10kPa ~ 115kPa)
Pressure Type: Absolute
Accuracy: ±0.3PSI (±2.07kPa)
Operating Temperature: -40°C ~ 125°C (TA)
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: PG-DSOF-8-16
Port Style: No Port
Maximum Pressure: 21.76PSI (150kPa)
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1500+3.71 EUR
3000+3.6 EUR
Mindestbestellmenge: 1500 Stücke
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KP212F1701XTMA1 Infineon-KP212F1701-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb320175410daf8b536d
KP212F1701XTMA1
Hersteller: Infineon Technologies
Description: SENSOR 16.68PSIA 4.5V DSOF8
Qualification: AEC-Q100
Grade: Automotive
Part Status: Active
Maximum Pressure: 21.76PSI (150kPa)
Port Style: No Port
Supplier Device Package: PG-DSOF-8-16
Voltage - Supply: 4.5V ~ 5.5V
Termination Style: SMD (SMT) Tab
Operating Temperature: -40°C ~ 125°C (TA)
Accuracy: ±0.29PSI (±2kPa)
Pressure Type: Absolute
Operating Pressure: 2.18PSI ~ 16.68PSI (15kPa ~ 115kPa)
Output: 0.5 V ~ 4.5 V
Mounting Type: Surface Mount
Output Type: Analog Voltage
Package / Case: 8-SMD Module
Features: Amplified Output, Temperature Compensated
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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IPT60R045CFD7XTMA1 Infineon-IPT60R045CFD7-DataSheet-v02_01-EN.pdf?fileId=5546d46271bf4f920171df2a61cc30ec
IPT60R045CFD7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 52A 8HSOF
Input Capacitance (Ciss) (Max) @ Vds: 3194 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-HSOF-8-2
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Power Dissipation (Max): 270W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2000+5.08 EUR
Mindestbestellmenge: 2000 Stücke
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IDFW80C65D1XKSA1 Infineon-IDFW80C65D1-DataSheet-v02_02-EN.pdf?fileId=5546d46274cf54d50174da579c702296
IDFW80C65D1XKSA1
Hersteller: Infineon Technologies
Description: DIODE ARR GP 650V 74A TO247-3-AI
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 73 ns
Technology: Standard
Current - Average Rectified (Io): 74A
Supplier Device Package: PG-TO247-3-AI
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 40 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 74A
Produkt ist nicht verfügbar
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BSP88L6327 INFNS13392-1.pdf?t.download=true&u=5oefqw
BSP88L6327
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 350mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 108µA
Supplier Device Package: PG-SOT223-4-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 95 pF @ 25 V
Produkt ist nicht verfügbar
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IPS05N03LA G IP(D,F,S,U)05N03LA_G.pdf
IPS05N03LA G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 50A TO251-3
Produkt ist nicht verfügbar
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IPS05N03LB G IPD05N03LB_v1.7_G.pdf
IPS05N03LB G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 90A TO251-3
Produkt ist nicht verfügbar
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IRLI540N Infineon-IRLI540N-DS-v01_02-EN.pdf?fileId=5546d462533600a401535664018125c1
IRLI540N
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 23A TO220AB FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 12A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO220-FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Produkt ist nicht verfügbar
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BSP320SL6433 INFNS15379-1.pdf?t.download=true&u=5oefqw
BSP320SL6433
Hersteller: Infineon Technologies
Description: SMALL-SIGNAL N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Tj)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.9A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: PG-SOT223-4-21
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 6378 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
945+0.48 EUR
Mindestbestellmenge: 945 Stücke
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BSP320SL6327 INFNS15379-1.pdf?t.download=true&u=5oefqw
BSP320SL6327
Hersteller: Infineon Technologies
Description: SMALL-SIGNAL N-CHANNEL MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-SOT223-4-21
Vgs(th) (Max) @ Id: 4V @ 20µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Bulk
auf Bestellung 2900 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1385+0.37 EUR
Mindestbestellmenge: 1385 Stücke
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BSP320S E6327 dgdl?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30433b47825b013b515cf1f42949
BSP320S E6327
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 2.9A SOT223-4
Qualification: AEC-Q101
Grade: Automotive
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-SOT223-4
Vgs(th) (Max) @ Id: 4V @ 20µA
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