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IPP100N06S3L-04IN IPP100N06S3L-04IN Infineon Technologies IPBIPN06S3L-04.pdf?t.download=true&u=ovmfp3 Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
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IPP100N06S205AKSA1 IPP100N06S205AKSA1 Infineon Technologies IPB%2CIPP100N06S2-05.pdf Description: MOSFET N-CH 55V 100A TO220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 5110 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: PG-TO220-3-1
Produkt ist nicht verfügbar
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IPP80N06S2-09 IPP80N06S2-09 Infineon Technologies INFNS09526-1.pdf?t.download=true&u=5oefqw Description: IPP80N06 - 55V-60V N-CHANNEL AUT
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 50A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 125µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 25 V
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IPP80N06S2-H5 IPP80N06S2-H5 Infineon Technologies INFNS09558-1.pdf?t.download=true&u=5oefqw Description: IPP80N06 - 55V-60V N-CHANNEL AUT
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 230µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
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CY15B128Q-SXE CY15B128Q-SXE Infineon Technologies Infineon-CY15B128Q-SXE-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee807ad70f9 Description: IC FRAM 128KBIT SPI 40MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 40 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Memory Interface: SPI
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
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97+16.8 EUR
194+16.39 EUR
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IPN95R1K2P7ATMA1 IPN95R1K2P7ATMA1 Infineon Technologies Infineon-IPN95R1K2P7-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb01643c097b3d575c Description: MOSFET N-CH 950V 6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.7A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 140µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 478 pF @ 400 V
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IPN95R1K2P7ATMA1 IPN95R1K2P7ATMA1 Infineon Technologies Infineon-IPN95R1K2P7-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb01643c097b3d575c Description: MOSFET N-CH 950V 6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.7A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 140µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 478 pF @ 400 V
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TLE92108231QXXUMA1 TLE92108231QXXUMA1 Infineon Technologies Infineon-TLE92108-231QX-DataSheet-v01_00-EN.pdf?fileId=5546d462749a7c2d01749b323e140979 Description: IC GATE DRVR HALF-BRIDGE 48VFQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Voltage - Supply: 6V ~ 28V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 950 V
Supplier Device Package: PG-VQFN-48-31
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Current - Peak Output (Source, Sink): 100mA, 100mA
Part Status: Active
DigiKey Programmable: Not Verified
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TLE92108232QXXUMA1 TLE92108232QXXUMA1 Infineon Technologies Infineon-TLE92108-232QX-DataSheet-v01_00-EN.pdf?fileId=5546d462749a7c2d01749b3138d607ed Description: IC GATE DRVR HALF-BRIDGE 48VFQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Voltage - Supply: 6V ~ 28V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 950 V
Supplier Device Package: PG-VQFN-48-31
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 100mA, 100mA
Part Status: Active
DigiKey Programmable: Not Verified
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KT230 KT230 Infineon Technologies KT%2CKTY.pdf Description: SENSOR PTC 1KOHM 3% SOT23-3
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PBM99010/23QSAP1A Infineon Technologies Description: INFINEON PBM99010/23QS - SSO28-5
Packaging: Bulk
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PBM99010/23QSA Infineon Technologies Description: INFINEON PBM99010/23QS - SSO28-4
Packaging: Bulk
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PBM99011/22QSAP1A Infineon Technologies Description: INFINEON PBM99011/22QS - SSO28-5
Packaging: Bulk
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PBM99011/22QSA Infineon Technologies Description: INFINEON PBM99011/22QS - SSO28-4
Packaging: Bulk
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IPD65R1K5CEAUMA1 IPD65R1K5CEAUMA1 Infineon Technologies Infineon-IPD65R1K5CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401539d84ec044501 Description: MOSFET N-CH 700V 5.2A TO252-3
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EVAL-IMM101T-015TOBO1 EVAL-IMM101T-015TOBO1 Infineon Technologies Infineon-Eval-IMM101T-UserManual-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016ca8dad3542c50 Description: EVAL-IMM101T-015 IS A STARTER KI
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: IMM101T-015
Supplied Contents: Board(s)
Primary Attributes: Motors (BLDC, PMSM)
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ESD206B102VE6327XTSA1 Infineon Technologies INFN-S-A0000321239-1.pdf?t.download=true&u=5oefqw Description: TRANS VOLTAGE SUPPRESSOR DIODE
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SIDC59D170HX1SA2 Infineon Technologies SIDC59D170H_L4481A.pdf?folderId=db3a304412b407950112b4386b1f6ad8&fileId=db3a304412b407950112b4386ba56ad9 Description: DIODE GP 1.7KV 100A WAFER
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 100A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Current - Reverse Leakage @ Vr: 27 µA @ 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 1700 V
Operating Temperature - Junction: -55°C ~ 150°C
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SIDC78D170HX1SA1 Infineon Technologies SIDC78D170H_L4451A.pdf?folderId=db3a304412b407950112b4386d4a6add&fileId=db3a304412b407950112b4386dd46ade Description: DIODE GP 1.7KV 150A WAFER
Current - Reverse Leakage @ Vr: 27 µA @ 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 150 A
Voltage - DC Reverse (Vr) (Max): 1700 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 150A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
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IM564X6DXKMA1 IM564X6DXKMA1 Infineon Technologies Infineon-IM564-X6D-DataSheet-v02_01-EN.pdf?fileId=5546d462700c0ae6017067279408762e Description: PFC INTEGRATED IPM
Packaging: Tube
Voltage: 600 V
Current: 20 A
Voltage - Isolation: 2000Vrms
Configuration: 3 Phase Inverter
Type: MOSFET
Mounting Type: Through Hole
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
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BTS247ZE3062AATMA1 BTS247ZE3062AATMA1 Infineon Technologies INFNS27931-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-5-2
Vgs(th) (Max) @ Id: 2V @ 90µA
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
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BTS247ZE3043AKSA1 BTS247ZE3043AKSA1 Infineon Technologies BTS247Z.pdf Description: MOSFET N-CH 55V 33A TO220-5-43
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: P-TO220-5-43
Vgs(th) (Max) @ Id: 2V @ 90µA
Power Dissipation (Max): 120W (Tc)
FET Feature: Temperature Sensing Diode
Rds On (Max) @ Id, Vgs: 18mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-5
Packaging: Tube
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BTS247Z BTS247Z Infineon Technologies INFNS14870-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
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BTS247ZE3062ANTMA1 BTS247ZE3062ANTMA1 Infineon Technologies INFNS27931-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-5-2
Vgs(th) (Max) @ Id: 2V @ 90µA
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Packaging: Bulk
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IPP60R600P6 IPP60R600P6 Infineon Technologies Infineon-IPx60R600P6-DS-v02_02-EN.pdf?fileId=db3a30433f2e70c5013f3862b5622681 Description: POWER FIELD-EFFECT TRANSISTOR, 6
Input Capacitance (Ciss) (Max) @ Vds: 557 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
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FF150R12KS4B2HOSA1 Infineon Technologies INFNS28343-1.pdf?t.download=true&u=5oefqw Description: FF150R12 - IGBT MODULE
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IPG20N06S2L-35AATMA1 IPG20N06S2L-35AATMA1 Infineon Technologies INFNS28025-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 55V
Power - Max: 65W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Bulk
Part Status: Active
Supplier Device Package: PG-TDSON-8-10
Vgs(th) (Max) @ Id: 2V @ 27µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 15A, 10V
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IKZA75N65RH5XKSA1 IKZA75N65RH5XKSA1 Infineon Technologies Infineon-IKZA75N65RH5-DataSheet-v02_01-EN.pdf?fileId=5546d46275b79adb0175dc28779431bb Description: IGBT TRENCH FS 650V 80A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: PG-TO247-4-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 25ns/180ns
Switching Energy: 310µJ (on), 300µJ (off)
Test Condition: 400V, 37.5A, 9Ohm, 15V
Gate Charge: 168 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
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T730N42TOFVTXPSA1 Infineon Technologies Infineon-T730N-DataSheet-v03_01-EN.pdf?fileId=5546d4627112d9d501712b083ec8402a Description: SCR MODULE 4200V 1840A DO200AC
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XDPL8220XUMA1 XDPL8220XUMA1 Infineon Technologies Infineon-XDPL8220-DS-v01_00-EN.pdf?fileId=5546d462584d1d4a015887029bcb5f03 Description: IC LED DRIVER OFFL PWM 16DSO
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 50MHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 85°C (TA)
Internal Switch(s): No
Topology: Flyback
Supplier Device Package: PG-DSO-16
Dimming: PWM
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 24V
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IRGC10B60KB Infineon Technologies Short_Form_Cat_2016.pdf Description: IGBT CHIP
Current - Collector (Ic) (Max): 10 A
Part Status: Obsolete
IGBT Type: NPT
Supplier Device Package: Die
Vce(on) (Max) @ Vge, Ic: 1.3V @ 15V, 2A
Input Type: Standard
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Voltage - Collector Emitter Breakdown (Max): 600 V
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IPLK60R1K5PFD7ATMA1 IPLK60R1K5PFD7ATMA1 Infineon Technologies Infineon-IPLK60R1K5PFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626fc1ce0b016fd787ece33d8f Description: MOSFET N-CH 600V 3.8A THIN-PAK
Part Status: Active
Supplier Device Package: PG-TDSON-8-52
Vgs(th) (Max) @ Id: 4.5V @ 40µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 700mA, 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 169 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
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IPLK60R600PFD7ATMA1 IPLK60R600PFD7ATMA1 Infineon Technologies Infineon-IPLK60R600PFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626fc1ce0b016fd749ad343d86 Description: MOSFET N-CH 600V 7A THIN-PAK
Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-52
Vgs(th) (Max) @ Id: 4.5V @ 80µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
FET Type: N-Channel
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IPD60R1K5PFD7SAUMA1 IPD60R1K5PFD7SAUMA1 Infineon Technologies Infineon-IPD60R1K5PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e225df2d46744 Description: MOSFET N-CH 600V 3.6A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 700mA, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 40µA
Supplier Device Package: PG-TO252-3-344
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 169 pF @ 400 V
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XDPS21081XUMA1 XDPS21081XUMA1 Infineon Technologies Infineon-XDPS21081-DataSheet-v02_00-EN.pdf?fileId=5546d46274692d0e017475eb92cd45db Description: XDP SMPS TV/PC
Number of Outputs: 1
Part Status: Not For New Designs
Clock Sync: No
Output Phases: 1
Control Features: Current Limit, Dead Time Control, Enable, Frequency Control, Soft Start
Synchronous Rectifier: No
Supplier Device Package: PG-DSO-12-20
Voltage - Supply (Vcc/Vdd): 7.2V ~ 20.5V
Topology: Flyback
Frequency - Switching: 23kHz ~ 139.1kHz
Output Configuration: Positive
Operating Temperature: -25°C ~ 125°C (TJ)
Function: Step-Up/Step-Down
Mounting Type: Surface Mount
Output Type: Transistor Driver
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Packaging: Cut Tape (CT)
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IPDD60R170CFD7XTMA1 IPDD60R170CFD7XTMA1 Infineon Technologies Infineon-IPDD60R170CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751c2e907f42b4 Description: MOSFET N-CH 600V 19A HDSOP-10
Input Capacitance (Ciss) (Max) @ Vds: 1016 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-HDSOP-10-1
Vgs(th) (Max) @ Id: 4.5V @ 240µA
Power Dissipation (Max): 137W (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 4.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Cut Tape (CT)
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KP212K1409XTMA1 KP212K1409XTMA1 Infineon Technologies Infineon-KP212K1409-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb3201754116ad5a5370 Description: SENSOR 16.68PSIA 4.65V DSOF8
Packaging: Cut Tape (CT)
Features: Amplified Output, Temperature Compensated
Package / Case: 8-SMD Module
Output Type: Analog Voltage
Mounting Type: Surface Mount
Output: 0.4 V ~ 4.65 V
Operating Pressure: 1.45PSI ~ 16.68PSI (10kPa ~ 115kPa)
Pressure Type: Absolute
Accuracy: ±0.3PSI (±2.07kPa)
Operating Temperature: -40°C ~ 125°C (TA)
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: PG-DSOF-8-16
Port Style: No Port
Maximum Pressure: 21.76PSI (150kPa)
Grade: Automotive
Qualification: AEC-Q100
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500+5.09 EUR
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KP212F1701XTMA1 KP212F1701XTMA1 Infineon Technologies Infineon-KP212F1701-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb320175410daf8b536d Description: SENSOR 16.68PSIA 4.5V DSOF8
Termination Style: SMD (SMT) Tab
Operating Temperature: -40°C ~ 125°C (TA)
Accuracy: ±0.29PSI (±2kPa)
Pressure Type: Absolute
Operating Pressure: 2.18PSI ~ 16.68PSI (15kPa ~ 115kPa)
Output: 0.5 V ~ 4.5 V
Mounting Type: Surface Mount
Output Type: Analog Voltage
Package / Case: 8-SMD Module
Features: Amplified Output, Temperature Compensated
Qualification: AEC-Q100
Grade: Automotive
Part Status: Active
Maximum Pressure: 21.76PSI (150kPa)
Port Style: No Port
Supplier Device Package: PG-DSOF-8-16
Voltage - Supply: 4.5V ~ 5.5V
Packaging: Cut Tape (CT)
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TC377TP96F300SAAKXUMA1 TC377TP96F300SAAKXUMA1 Infineon Technologies infineon-sak-tc37x-datasheet-en.pdf Description: IC MCU 32BIT 6MB FLASH 292LFBGA
Packaging: Cut Tape (CT)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 6MB (6M x 8)
RAM Size: 1.1M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
DigiKey Programmable: Not Verified
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BSZ0910LSATMA1 BSZ0910LSATMA1 Infineon Technologies Infineon-BSZ0910LS-DataSheet-v02_00-EN.pdf?fileId=5546d46271bf4f9201720e9f3ab57cdf Description: MOSFET N-CH 30V 18A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.1W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
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TLI4971A050T5UE0001XUMA1 TLI4971A050T5UE0001XUMA1 Infineon Technologies Infineon-TLI4971_25_50_75_120-DataSheet-v01_20-EN.pdf?fileId=5546d462700c0ae6017034d731621b09 Description: CURRENT SEN HE/OL 50A PG-TISON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Polarization: Unidirectional
Sensitivity: 24mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: DC ~ 240kHz
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 250ns
Sensor Type: Hall Effect, Open Loop
Linearity: ±2.25%
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 50A
Supplier Device Package: PG-TISON-8-5
Part Status: Active
Number of Channels: 1
Grade: Automotive
Qualification: AEC-Q100
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TLI4971A025T5UE0001XUMA1 TLI4971A025T5UE0001XUMA1 Infineon Technologies Infineon-TLI4971_25_50_75_120-DataSheet-v01_20-EN.pdf?fileId=5546d462700c0ae6017034d731621b09 Description: CURRENT SEN HE/OL 25A PG-TISON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Polarization: Unidirectional
Sensitivity: 48mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: DC ~ 240kHz
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 250ns
Sensor Type: Hall Effect, Open Loop
Linearity: ±2.25%
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 25A
Supplier Device Package: PG-TISON-8-5
Part Status: Active
Number of Channels: 1
Grade: Automotive
Qualification: AEC-Q100
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LITELDOSBCV33BOARDTOBO1 LITELDOSBCV33BOARDTOBO1 Infineon Technologies Infineon-Lite_SBC_Evaluation_Board-Getting_Started-UM-v01_00-EN.pdf?fileId=5546d46267c74c9a0167d02c0bcd1a6a Description: EVAL BOARD FOR TLE9461-3ES
Packaging: Box
Function: System Basis Chip (SBC)
Type: Interface
Contents: Board(s)
Utilized IC / Part: TLE9461-3ES
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TT104N08KOFHPSA1 Infineon Technologies TT104N.pdf Description: SCR MODULE 800V 160A MODULE
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TT104N12KOFHPSA1 Infineon Technologies TT104N_Type.pdf Description: SCR MODULE 1.2KV 160A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 104 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.2 kV
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TT104N12KOFAHPSA1 Infineon Technologies TT104N_Type.pdf Description: SCR MODULE 1.2KV 160A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C
Structure: Common Anode - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 104 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.2 kV
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TT104N12KOFKHPSA1 Infineon Technologies TT104N_Type.pdf Description: SCR MODULE 1.2KV 160A MODULE
Voltage - Off State: 1.2 kV
Current - On State (It (RMS)) (Max): 160 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (AV)) (Max): 104 A
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Hold (Ih) (Max): 200 mA
Structure: Common Cathode - All SCRs
Operating Temperature: -40°C ~ 140°C
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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CY2XF33LXC533T CY2XF33LXC533T Infineon Technologies download Description: TSBU
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IKW40N65RH5XKSA1 IKW40N65RH5XKSA1 Infineon Technologies Infineon-IKW40N65RH5-DataSheet-v02_01-EN.pdf?fileId=5546d46275b79adb0175dc16a3d630f8 Description: IGBT TRENCH FS 650V 74A TO247-3
Current - Collector Pulsed (Icm): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 74 A
Part Status: Active
Gate Charge: 95 nC
Test Condition: 400V, 20A, 15Ohm, 15V
Switching Energy: 160µJ (on), 120µJ (off)
Td (on/off) @ 25°C: 18ns/165ns
IGBT Type: Trench Field Stop
Supplier Device Package: PG-TO247-3
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 250 W
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IKW40N65H5 IKW40N65H5 Infineon Technologies Part_Number_Guide_Web.pdf Description: IGBT 650V 74A 255W PG-TO247-3
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BSP324L6327 BSP324L6327 Infineon Technologies INFNS13390-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 25Ohm @ 170mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 94µA
Supplier Device Package: PG-SOT223-4-21
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 154 pF @ 25 V
Qualification: AEC-Q101
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BSP324 E6327 BSP324 E6327 Infineon Technologies BSP324.pdf Description: MOSFET N-CH 400V 170MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 25Ohm @ 170mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 94µA
Supplier Device Package: PG-SOT223-4
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 154 pF @ 25 V
Qualification: AEC-Q101
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BCR401RE6433HTMA1 BCR401RE6433HTMA1 Infineon Technologies Infineon-BCR401R-DS-v01_01-EN.pdf?fileId=5546d46262b31d2e0162f27265483c8b Description: IC LED DRVR LIN 60MA SOT143R-3D
Voltage - Supply (Max): 18V
Voltage - Supply (Min): 1.2V
Supplier Device Package: PG-SOT-143R-3D
Internal Switch(s): Yes
Current - Output / Channel: 60mA
Applications: Lighting
Operating Temperature: 150°C (TJ)
Type: Linear
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output: 16V
Package / Case: SOT-143R
Packaging: Bulk
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1ED3860MU12MXUMA1 1ED3860MU12MXUMA1 Infineon Technologies Infineon-1ED38x0Mc12M-DataSheet-v02_00-EN.pdf?fileId=5546d46274cf54d50174d97c260c1f5d Description: DIGITAL ISO 1CH GT DVR DSO16-28
Rise / Fall Time (Typ): 15ns, 15ns
Supplier Device Package: PG-DSO-16-28
Approval Agency: UL, VDE
Technology: Magnetic Coupling
Current - Peak Output: 6A
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 16-BSSOP (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Voltage - Output Supply: 13V ~ 25V
Number of Channels: 1
Part Status: Active
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1ED3860MU12MXUMA1 1ED3860MU12MXUMA1 Infineon Technologies Infineon-1ED38x0Mc12M-DataSheet-v02_00-EN.pdf?fileId=5546d46274cf54d50174d97c260c1f5d Description: DIGITAL ISO 1CH GT DVR DSO16-28
Approval Agency: UL, VDE
Technology: Magnetic Coupling
Current - Peak Output: 6A
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 16-BSSOP (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
Voltage - Output Supply: 13V ~ 25V
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 15ns, 15ns
Supplier Device Package: PG-DSO-16-28
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XDPS21081XUMA1 XDPS21081XUMA1 Infineon Technologies Infineon-XDPS21081-DataSheet-v02_00-EN.pdf?fileId=5546d46274692d0e017475eb92cd45db Description: XDP SMPS TV/PC
Number of Outputs: 1
Part Status: Not For New Designs
Clock Sync: No
Output Phases: 1
Control Features: Current Limit, Dead Time Control, Enable, Frequency Control, Soft Start
Synchronous Rectifier: No
Supplier Device Package: PG-DSO-12-20
Voltage - Supply (Vcc/Vdd): 7.2V ~ 20.5V
Topology: Flyback
Frequency - Switching: 23kHz ~ 139.1kHz
Output Configuration: Positive
Operating Temperature: -25°C ~ 125°C (TJ)
Function: Step-Up/Step-Down
Mounting Type: Surface Mount
Output Type: Transistor Driver
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Packaging: Tape & Reel (TR)
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TLE5027CE6747HAMA3 Infineon Technologies TLE5027C_PB_7-2-13.pdf Description: SENSOR MAGNETORESISTIVE PWM 3SIP
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TLE5027CE6747HAMA4 TLE5027CE6747HAMA4 Infineon Technologies TLE5027C_PB_7-2-13.pdf Description: SEN MR PWM PG-SSO-3-92
Qualification: AEC-Q100
Grade: Automotive
Part Status: Obsolete
Supplier Device Package: PG-SSO-3-92
Technology: Magnetoresistive
Operating Temperature: -40°C ~ 175°C (TJ)
Axis: X, Y, Z
Mounting Type: Through Hole
Output Type: PWM
Package / Case: 3-SSIP Module
Packaging: Tape & Box (TB)
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TLE5027CXAAD47AGXAMA1 Infineon Technologies Description: SEN MR PWM PG-SSO-3-92
Package / Case: 3-SSIP Module
Packaging: Tape & Box (TB)
Qualification: AEC-Q100
Grade: Automotive
Part Status: Obsolete
Supplier Device Package: PG-SSO-3-92
Technology: Magnetoresistive
Operating Temperature: -40°C ~ 175°C (TJ)
Axis: X, Y, Z
Mounting Type: Through Hole
Output Type: PWM
Produkt ist nicht verfügbar
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FF150R12KE3B8BDLA1 Infineon Technologies INFNS28343-1.pdf?t.download=true&u=5oefqw Description: IGBT MODULE 1200V 225A AG-62MM
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 1250 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 225 A
Part Status: Active
Supplier Device Package: AG-62MM
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 150A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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3+186.32 EUR
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IPP100N06S3L-04IN IPBIPN06S3L-04.pdf?t.download=true&u=ovmfp3
IPP100N06S3L-04IN
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 500 Stücke:
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AnzahlPrivatkunde
500+1.44 EUR
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IPP100N06S205AKSA1 IPB%2CIPP100N06S2-05.pdf
IPP100N06S205AKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 100A TO220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 5110 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: PG-TO220-3-1
Produkt ist nicht verfügbar
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IPP80N06S2-09 INFNS09526-1.pdf?t.download=true&u=5oefqw
IPP80N06S2-09
Hersteller: Infineon Technologies
Description: IPP80N06 - 55V-60V N-CHANNEL AUT
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 50A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 125µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 25 V
Produkt ist nicht verfügbar
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IPP80N06S2-H5 INFNS09558-1.pdf?t.download=true&u=5oefqw
IPP80N06S2-H5
Hersteller: Infineon Technologies
Description: IPP80N06 - 55V-60V N-CHANNEL AUT
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 230µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
Produkt ist nicht verfügbar
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CY15B128Q-SXE Infineon-CY15B128Q-SXE-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee807ad70f9
CY15B128Q-SXE
Hersteller: Infineon Technologies
Description: IC FRAM 128KBIT SPI 40MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 40 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Memory Interface: SPI
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
auf Bestellung 526 Stücke:
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2+19.56 EUR
10+18.18 EUR
25+17.62 EUR
97+16.8 EUR
194+16.39 EUR
291+16.15 EUR
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IPN95R1K2P7ATMA1 Infineon-IPN95R1K2P7-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb01643c097b3d575c
IPN95R1K2P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 950V 6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.7A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 140µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 478 pF @ 400 V
auf Bestellung 24000 Stücke:
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AnzahlPrivatkunde
3000+0.93 EUR
9000+0.83 EUR
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IPN95R1K2P7ATMA1 Infineon-IPN95R1K2P7-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb01643c097b3d575c
IPN95R1K2P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 950V 6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.7A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 140µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 478 pF @ 400 V
auf Bestellung 25718 Stücke:
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7+3.44 EUR
10+2.18 EUR
50+1.64 EUR
100+1.46 EUR
500+1.15 EUR
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TLE92108231QXXUMA1 Infineon-TLE92108-231QX-DataSheet-v01_00-EN.pdf?fileId=5546d462749a7c2d01749b323e140979
TLE92108231QXXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 48VFQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Voltage - Supply: 6V ~ 28V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 950 V
Supplier Device Package: PG-VQFN-48-31
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Current - Peak Output (Source, Sink): 100mA, 100mA
Part Status: Active
DigiKey Programmable: Not Verified
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4+6.2 EUR
10+4.65 EUR
25+4.26 EUR
100+3.84 EUR
250+3.64 EUR
500+3.59 EUR
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TLE92108232QXXUMA1 Infineon-TLE92108-232QX-DataSheet-v01_00-EN.pdf?fileId=5546d462749a7c2d01749b3138d607ed
TLE92108232QXXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 48VFQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Voltage - Supply: 6V ~ 28V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 950 V
Supplier Device Package: PG-VQFN-48-31
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 100mA, 100mA
Part Status: Active
DigiKey Programmable: Not Verified
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4+6.41 EUR
10+4.82 EUR
25+4.43 EUR
100+3.99 EUR
250+3.77 EUR
500+3.74 EUR
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KT230 KT%2CKTY.pdf
KT230
Hersteller: Infineon Technologies
Description: SENSOR PTC 1KOHM 3% SOT23-3
auf Bestellung 629082 Stücke:
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1090+0.51 EUR
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PBM99010/23QSAP1A
Hersteller: Infineon Technologies
Description: INFINEON PBM99010/23QS - SSO28-5
Packaging: Bulk
auf Bestellung 17500 Stücke:
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163+3.27 EUR
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PBM99010/23QSA
Hersteller: Infineon Technologies
Description: INFINEON PBM99010/23QS - SSO28-4
Packaging: Bulk
auf Bestellung 2804 Stücke:
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163+3.27 EUR
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PBM99011/22QSAP1A
Hersteller: Infineon Technologies
Description: INFINEON PBM99011/22QS - SSO28-5
Packaging: Bulk
auf Bestellung 95000 Stücke:
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AnzahlPrivatkunde
139+3.84 EUR
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PBM99011/22QSA
Hersteller: Infineon Technologies
Description: INFINEON PBM99011/22QS - SSO28-4
Packaging: Bulk
auf Bestellung 5000 Stücke:
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139+3.84 EUR
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IPD65R1K5CEAUMA1 Infineon-IPD65R1K5CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401539d84ec044501
IPD65R1K5CEAUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V 5.2A TO252-3
Produkt ist nicht verfügbar
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EVAL-IMM101T-015TOBO1 Infineon-Eval-IMM101T-UserManual-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016ca8dad3542c50
EVAL-IMM101T-015TOBO1
Hersteller: Infineon Technologies
Description: EVAL-IMM101T-015 IS A STARTER KI
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: IMM101T-015
Supplied Contents: Board(s)
Primary Attributes: Motors (BLDC, PMSM)
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ESD206B102VE6327XTSA1 INFN-S-A0000321239-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: TRANS VOLTAGE SUPPRESSOR DIODE
Produkt ist nicht verfügbar
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SIDC59D170HX1SA2 SIDC59D170H_L4481A.pdf?folderId=db3a304412b407950112b4386b1f6ad8&fileId=db3a304412b407950112b4386ba56ad9
Hersteller: Infineon Technologies
Description: DIODE GP 1.7KV 100A WAFER
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 100A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Current - Reverse Leakage @ Vr: 27 µA @ 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 1700 V
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar
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SIDC78D170HX1SA1 SIDC78D170H_L4451A.pdf?folderId=db3a304412b407950112b4386d4a6add&fileId=db3a304412b407950112b4386dd46ade
Hersteller: Infineon Technologies
Description: DIODE GP 1.7KV 150A WAFER
Current - Reverse Leakage @ Vr: 27 µA @ 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 150 A
Voltage - DC Reverse (Vr) (Max): 1700 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 150A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
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IM564X6DXKMA1 Infineon-IM564-X6D-DataSheet-v02_01-EN.pdf?fileId=5546d462700c0ae6017067279408762e
IM564X6DXKMA1
Hersteller: Infineon Technologies
Description: PFC INTEGRATED IPM
Packaging: Tube
Voltage: 600 V
Current: 20 A
Voltage - Isolation: 2000Vrms
Configuration: 3 Phase Inverter
Type: MOSFET
Mounting Type: Through Hole
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
auf Bestellung 277 Stücke:
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1+42.52 EUR
14+29.31 EUR
112+24.41 EUR
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BTS247ZE3062AATMA1 INFNS27931-1.pdf?t.download=true&u=5oefqw
BTS247ZE3062AATMA1
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-5-2
Vgs(th) (Max) @ Id: 2V @ 90µA
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Produkt ist nicht verfügbar
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BTS247ZE3043AKSA1 BTS247Z.pdf
BTS247ZE3043AKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 33A TO220-5-43
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: P-TO220-5-43
Vgs(th) (Max) @ Id: 2V @ 90µA
Power Dissipation (Max): 120W (Tc)
FET Feature: Temperature Sensing Diode
Rds On (Max) @ Id, Vgs: 18mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-5
Packaging: Tube
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
209+2.61 EUR
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BTS247Z INFNS14870-1.pdf?t.download=true&u=5oefqw
BTS247Z
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 12634 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
237+2.53 EUR
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BTS247ZE3062ANTMA1 INFNS27931-1.pdf?t.download=true&u=5oefqw
BTS247ZE3062ANTMA1
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-5-2
Vgs(th) (Max) @ Id: 2V @ 90µA
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Packaging: Bulk
auf Bestellung 80650 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
113+5.32 EUR
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IPP60R600P6 Infineon-IPx60R600P6-DS-v02_02-EN.pdf?fileId=db3a30433f2e70c5013f3862b5622681
IPP60R600P6
Hersteller: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR, 6
Input Capacitance (Ciss) (Max) @ Vds: 557 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Produkt ist nicht verfügbar
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FF150R12KS4B2HOSA1 INFNS28343-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: FF150R12 - IGBT MODULE
Produkt ist nicht verfügbar
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IPG20N06S2L-35AATMA1 INFNS28025-1.pdf?t.download=true&u=5oefqw
IPG20N06S2L-35AATMA1
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 55V
Power - Max: 65W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Bulk
Part Status: Active
Supplier Device Package: PG-TDSON-8-10
Vgs(th) (Max) @ Id: 2V @ 27µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 15A, 10V
Produkt ist nicht verfügbar
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IKZA75N65RH5XKSA1 Infineon-IKZA75N65RH5-DataSheet-v02_01-EN.pdf?fileId=5546d46275b79adb0175dc28779431bb
IKZA75N65RH5XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 80A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: PG-TO247-4-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 25ns/180ns
Switching Energy: 310µJ (on), 300µJ (off)
Test Condition: 400V, 37.5A, 9Ohm, 15V
Gate Charge: 168 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
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AnzahlPrivatkunde
2+19.48 EUR
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T730N42TOFVTXPSA1 Infineon-T730N-DataSheet-v03_01-EN.pdf?fileId=5546d4627112d9d501712b083ec8402a
Hersteller: Infineon Technologies
Description: SCR MODULE 4200V 1840A DO200AC
Produkt ist nicht verfügbar
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XDPL8220XUMA1 Infineon-XDPL8220-DS-v01_00-EN.pdf?fileId=5546d462584d1d4a015887029bcb5f03
XDPL8220XUMA1
Hersteller: Infineon Technologies
Description: IC LED DRIVER OFFL PWM 16DSO
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 50MHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 85°C (TA)
Internal Switch(s): No
Topology: Flyback
Supplier Device Package: PG-DSO-16
Dimming: PWM
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 24V
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158+3.43 EUR
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IRGC10B60KB Short_Form_Cat_2016.pdf
Hersteller: Infineon Technologies
Description: IGBT CHIP
Current - Collector (Ic) (Max): 10 A
Part Status: Obsolete
IGBT Type: NPT
Supplier Device Package: Die
Vce(on) (Max) @ Vge, Ic: 1.3V @ 15V, 2A
Input Type: Standard
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Voltage - Collector Emitter Breakdown (Max): 600 V
Produkt ist nicht verfügbar
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IPLK60R1K5PFD7ATMA1 Infineon-IPLK60R1K5PFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626fc1ce0b016fd787ece33d8f
IPLK60R1K5PFD7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 3.8A THIN-PAK
Part Status: Active
Supplier Device Package: PG-TDSON-8-52
Vgs(th) (Max) @ Id: 4.5V @ 40µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 700mA, 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 169 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar
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IPLK60R600PFD7ATMA1 Infineon-IPLK60R600PFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626fc1ce0b016fd749ad343d86
IPLK60R600PFD7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 7A THIN-PAK
Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-52
Vgs(th) (Max) @ Id: 4.5V @ 80µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
FET Type: N-Channel
Produkt ist nicht verfügbar
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IPD60R1K5PFD7SAUMA1 Infineon-IPD60R1K5PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e225df2d46744
IPD60R1K5PFD7SAUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 3.6A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 700mA, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 40µA
Supplier Device Package: PG-TO252-3-344
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 169 pF @ 400 V
Produkt ist nicht verfügbar
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XDPS21081XUMA1 Infineon-XDPS21081-DataSheet-v02_00-EN.pdf?fileId=5546d46274692d0e017475eb92cd45db
XDPS21081XUMA1
Hersteller: Infineon Technologies
Description: XDP SMPS TV/PC
Number of Outputs: 1
Part Status: Not For New Designs
Clock Sync: No
Output Phases: 1
Control Features: Current Limit, Dead Time Control, Enable, Frequency Control, Soft Start
Synchronous Rectifier: No
Supplier Device Package: PG-DSO-12-20
Voltage - Supply (Vcc/Vdd): 7.2V ~ 20.5V
Topology: Flyback
Frequency - Switching: 23kHz ~ 139.1kHz
Output Configuration: Positive
Operating Temperature: -25°C ~ 125°C (TJ)
Function: Step-Up/Step-Down
Mounting Type: Surface Mount
Output Type: Transistor Driver
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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IPDD60R170CFD7XTMA1 Infineon-IPDD60R170CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751c2e907f42b4
IPDD60R170CFD7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 19A HDSOP-10
Input Capacitance (Ciss) (Max) @ Vds: 1016 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-HDSOP-10-1
Vgs(th) (Max) @ Id: 4.5V @ 240µA
Power Dissipation (Max): 137W (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 4.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Cut Tape (CT)
auf Bestellung 25 Stücke:
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4+5.53 EUR
10+4.13 EUR
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KP212K1409XTMA1 Infineon-KP212K1409-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb3201754116ad5a5370
KP212K1409XTMA1
Hersteller: Infineon Technologies
Description: SENSOR 16.68PSIA 4.65V DSOF8
Packaging: Cut Tape (CT)
Features: Amplified Output, Temperature Compensated
Package / Case: 8-SMD Module
Output Type: Analog Voltage
Mounting Type: Surface Mount
Output: 0.4 V ~ 4.65 V
Operating Pressure: 1.45PSI ~ 16.68PSI (10kPa ~ 115kPa)
Pressure Type: Absolute
Accuracy: ±0.3PSI (±2.07kPa)
Operating Temperature: -40°C ~ 125°C (TA)
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: PG-DSOF-8-16
Port Style: No Port
Maximum Pressure: 21.76PSI (150kPa)
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1500 Stücke:
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3+7.39 EUR
5+6.62 EUR
10+6.32 EUR
25+5.97 EUR
50+5.75 EUR
100+5.52 EUR
500+5.09 EUR
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KP212F1701XTMA1 Infineon-KP212F1701-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb320175410daf8b536d
KP212F1701XTMA1
Hersteller: Infineon Technologies
Description: SENSOR 16.68PSIA 4.5V DSOF8
Termination Style: SMD (SMT) Tab
Operating Temperature: -40°C ~ 125°C (TA)
Accuracy: ±0.29PSI (±2kPa)
Pressure Type: Absolute
Operating Pressure: 2.18PSI ~ 16.68PSI (15kPa ~ 115kPa)
Output: 0.5 V ~ 4.5 V
Mounting Type: Surface Mount
Output Type: Analog Voltage
Package / Case: 8-SMD Module
Features: Amplified Output, Temperature Compensated
Qualification: AEC-Q100
Grade: Automotive
Part Status: Active
Maximum Pressure: 21.76PSI (150kPa)
Port Style: No Port
Supplier Device Package: PG-DSOF-8-16
Voltage - Supply: 4.5V ~ 5.5V
Packaging: Cut Tape (CT)
auf Bestellung 177 Stücke:
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4+6.47 EUR
5+5.8 EUR
10+5.55 EUR
25+5.24 EUR
50+5.03 EUR
100+4.84 EUR
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TC377TP96F300SAAKXUMA1 infineon-sak-tc37x-datasheet-en.pdf
TC377TP96F300SAAKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 6MB FLASH 292LFBGA
Packaging: Cut Tape (CT)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 6MB (6M x 8)
RAM Size: 1.1M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
DigiKey Programmable: Not Verified
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1+64.82 EUR
10+52.55 EUR
50+47.64 EUR
100+46.11 EUR
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BSZ0910LSATMA1 Infineon-BSZ0910LS-DataSheet-v02_00-EN.pdf?fileId=5546d46271bf4f9201720e9f3ab57cdf
BSZ0910LSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 18A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.1W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
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TLI4971A050T5UE0001XUMA1 Infineon-TLI4971_25_50_75_120-DataSheet-v01_20-EN.pdf?fileId=5546d462700c0ae6017034d731621b09
TLI4971A050T5UE0001XUMA1
Hersteller: Infineon Technologies
Description: CURRENT SEN HE/OL 50A PG-TISON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Polarization: Unidirectional
Sensitivity: 24mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: DC ~ 240kHz
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 250ns
Sensor Type: Hall Effect, Open Loop
Linearity: ±2.25%
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 50A
Supplier Device Package: PG-TISON-8-5
Part Status: Active
Number of Channels: 1
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLI4971A025T5UE0001XUMA1 Infineon-TLI4971_25_50_75_120-DataSheet-v01_20-EN.pdf?fileId=5546d462700c0ae6017034d731621b09
TLI4971A025T5UE0001XUMA1
Hersteller: Infineon Technologies
Description: CURRENT SEN HE/OL 25A PG-TISON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Polarization: Unidirectional
Sensitivity: 48mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: DC ~ 240kHz
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 250ns
Sensor Type: Hall Effect, Open Loop
Linearity: ±2.25%
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 25A
Supplier Device Package: PG-TISON-8-5
Part Status: Active
Number of Channels: 1
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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LITELDOSBCV33BOARDTOBO1 Infineon-Lite_SBC_Evaluation_Board-Getting_Started-UM-v01_00-EN.pdf?fileId=5546d46267c74c9a0167d02c0bcd1a6a
LITELDOSBCV33BOARDTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR TLE9461-3ES
Packaging: Box
Function: System Basis Chip (SBC)
Type: Interface
Contents: Board(s)
Utilized IC / Part: TLE9461-3ES
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1+261.34 EUR
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TT104N08KOFHPSA1 TT104N.pdf
Hersteller: Infineon Technologies
Description: SCR MODULE 800V 160A MODULE
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TT104N12KOFHPSA1 TT104N_Type.pdf
Hersteller: Infineon Technologies
Description: SCR MODULE 1.2KV 160A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 104 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.2 kV
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TT104N12KOFAHPSA1 TT104N_Type.pdf
Hersteller: Infineon Technologies
Description: SCR MODULE 1.2KV 160A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C
Structure: Common Anode - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 104 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.2 kV
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TT104N12KOFKHPSA1 TT104N_Type.pdf
Hersteller: Infineon Technologies
Description: SCR MODULE 1.2KV 160A MODULE
Voltage - Off State: 1.2 kV
Current - On State (It (RMS)) (Max): 160 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (AV)) (Max): 104 A
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Hold (Ih) (Max): 200 mA
Structure: Common Cathode - All SCRs
Operating Temperature: -40°C ~ 140°C
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Produkt ist nicht verfügbar
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CY2XF33LXC533T download
CY2XF33LXC533T
Hersteller: Infineon Technologies
Description: TSBU
auf Bestellung 173 Stücke:
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AnzahlPrivatkunde
2+16.48 EUR
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IKW40N65RH5XKSA1 Infineon-IKW40N65RH5-DataSheet-v02_01-EN.pdf?fileId=5546d46275b79adb0175dc16a3d630f8
IKW40N65RH5XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 74A TO247-3
Current - Collector Pulsed (Icm): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 74 A
Part Status: Active
Gate Charge: 95 nC
Test Condition: 400V, 20A, 15Ohm, 15V
Switching Energy: 160µJ (on), 120µJ (off)
Td (on/off) @ 25°C: 18ns/165ns
IGBT Type: Trench Field Stop
Supplier Device Package: PG-TO247-3
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 250 W
auf Bestellung 204 Stücke:
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2+12.02 EUR
30+6.84 EUR
120+5.7 EUR
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IKW40N65H5 Part_Number_Guide_Web.pdf
IKW40N65H5
Hersteller: Infineon Technologies
Description: IGBT 650V 74A 255W PG-TO247-3
Produkt ist nicht verfügbar
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BSP324L6327 INFNS13390-1.pdf?t.download=true&u=5oefqw
BSP324L6327
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 25Ohm @ 170mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 94µA
Supplier Device Package: PG-SOT223-4-21
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 154 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 26474 Stücke:
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709+0.76 EUR
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BSP324 E6327 BSP324.pdf
BSP324 E6327
Hersteller: Infineon Technologies
Description: MOSFET N-CH 400V 170MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 25Ohm @ 170mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 94µA
Supplier Device Package: PG-SOT223-4
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 154 pF @ 25 V
Qualification: AEC-Q101
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BCR401RE6433HTMA1 Infineon-BCR401R-DS-v01_01-EN.pdf?fileId=5546d46262b31d2e0162f27265483c8b
BCR401RE6433HTMA1
Hersteller: Infineon Technologies
Description: IC LED DRVR LIN 60MA SOT143R-3D
Voltage - Supply (Max): 18V
Voltage - Supply (Min): 1.2V
Supplier Device Package: PG-SOT-143R-3D
Internal Switch(s): Yes
Current - Output / Channel: 60mA
Applications: Lighting
Operating Temperature: 150°C (TJ)
Type: Linear
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output: 16V
Package / Case: SOT-143R
Packaging: Bulk
auf Bestellung 2000 Stücke:
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AnzahlPrivatkunde
2000+0.23 EUR
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1ED3860MU12MXUMA1 Infineon-1ED38x0Mc12M-DataSheet-v02_00-EN.pdf?fileId=5546d46274cf54d50174d97c260c1f5d
1ED3860MU12MXUMA1
Hersteller: Infineon Technologies
Description: DIGITAL ISO 1CH GT DVR DSO16-28
Rise / Fall Time (Typ): 15ns, 15ns
Supplier Device Package: PG-DSO-16-28
Approval Agency: UL, VDE
Technology: Magnetic Coupling
Current - Peak Output: 6A
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 16-BSSOP (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Voltage - Output Supply: 13V ~ 25V
Number of Channels: 1
Part Status: Active
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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1ED3860MU12MXUMA1 Infineon-1ED38x0Mc12M-DataSheet-v02_00-EN.pdf?fileId=5546d46274cf54d50174d97c260c1f5d
1ED3860MU12MXUMA1
Hersteller: Infineon Technologies
Description: DIGITAL ISO 1CH GT DVR DSO16-28
Approval Agency: UL, VDE
Technology: Magnetic Coupling
Current - Peak Output: 6A
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 16-BSSOP (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
Voltage - Output Supply: 13V ~ 25V
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 15ns, 15ns
Supplier Device Package: PG-DSO-16-28
Produkt ist nicht verfügbar
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XDPS21081XUMA1 Infineon-XDPS21081-DataSheet-v02_00-EN.pdf?fileId=5546d46274692d0e017475eb92cd45db
XDPS21081XUMA1
Hersteller: Infineon Technologies
Description: XDP SMPS TV/PC
Number of Outputs: 1
Part Status: Not For New Designs
Clock Sync: No
Output Phases: 1
Control Features: Current Limit, Dead Time Control, Enable, Frequency Control, Soft Start
Synchronous Rectifier: No
Supplier Device Package: PG-DSO-12-20
Voltage - Supply (Vcc/Vdd): 7.2V ~ 20.5V
Topology: Flyback
Frequency - Switching: 23kHz ~ 139.1kHz
Output Configuration: Positive
Operating Temperature: -25°C ~ 125°C (TJ)
Function: Step-Up/Step-Down
Mounting Type: Surface Mount
Output Type: Transistor Driver
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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TLE5027CE6747HAMA3 TLE5027C_PB_7-2-13.pdf
Hersteller: Infineon Technologies
Description: SENSOR MAGNETORESISTIVE PWM 3SIP
Produkt ist nicht verfügbar
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TLE5027CE6747HAMA4 TLE5027C_PB_7-2-13.pdf
TLE5027CE6747HAMA4
Hersteller: Infineon Technologies
Description: SEN MR PWM PG-SSO-3-92
Qualification: AEC-Q100
Grade: Automotive
Part Status: Obsolete
Supplier Device Package: PG-SSO-3-92
Technology: Magnetoresistive
Operating Temperature: -40°C ~ 175°C (TJ)
Axis: X, Y, Z
Mounting Type: Through Hole
Output Type: PWM
Package / Case: 3-SSIP Module
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
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TLE5027CXAAD47AGXAMA1
Hersteller: Infineon Technologies
Description: SEN MR PWM PG-SSO-3-92
Package / Case: 3-SSIP Module
Packaging: Tape & Box (TB)
Qualification: AEC-Q100
Grade: Automotive
Part Status: Obsolete
Supplier Device Package: PG-SSO-3-92
Technology: Magnetoresistive
Operating Temperature: -40°C ~ 175°C (TJ)
Axis: X, Y, Z
Mounting Type: Through Hole
Output Type: PWM
Produkt ist nicht verfügbar
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FF150R12KE3B8BDLA1 INFNS28343-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 225A AG-62MM
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 1250 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 225 A
Part Status: Active
Supplier Device Package: AG-62MM
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 150A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
auf Bestellung 23 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+186.32 EUR
Mindestbestellmenge: 3 Stücke
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