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BTS500251TADATMA2 BTS500251TADATMA2 Infineon Technologies BTS50025-1TAD_Rev1.2_12-5-17.pdf Description: IC PWR SWITCH N-CHAN 1:1 TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 3.9mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 25A
Ratio - Input:Output: 1:1
Supplier Device Package: P/PG-TO-263-7-10
Fault Protection: Over Temperature, Over Voltage, Reverse Battery, Short Circuit
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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10+5.00 EUR
25+4.60 EUR
100+4.16 EUR
250+3.95 EUR
500+3.82 EUR
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BTS500551TMB BTS500551TMB Infineon Technologies INFNS15719-1.pdf?t.download=true&u=5oefqw Description: AUTOMOTIVE HIGH SIDE SWITCH
Features: Auto Restart
Packaging: Bulk
Package / Case: TO-220-7 Formed Leads
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 4.4mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 55A
Ratio - Input:Output: 1:1
Supplier Device Package: P-TO220-7-11
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Load, Over Temperature, Over Voltage, Short Circuit, UVLO
Part Status: Active
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BTS50025-1TAC BTS50025-1TAC Infineon Technologies INFN-S-A0003268411-1.pdf?t.download=true&u=5oefqw Description: AUTOMOTIVE HIGH SIDE SWITCH
Packaging: Bulk
Part Status: Active
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IPP65R041CFD7XKSA1 IPP65R041CFD7XKSA1 Infineon Technologies Infineon-IPP65R041CFD7-DataSheet-v02_01-EN.pdf?fileId=5546d46272e49d2a01730951a7f844ee Description: 650V FET COOLMOS TO247
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 24.8A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.24mA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V
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IPP60R600P6XKSA1 IPP60R600P6XKSA1 Infineon Technologies DS_IPx60R600P6_2_1.pdf?fileId=db3a30433f2e70c5013f3862b5622681 Description: MOSFET N-CH 600V 7.3A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 557 pF @ 100 V
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BUZ73HXKSA1 BUZ73HXKSA1 Infineon Technologies BUZ73_H.pdf Description: MOSFET N-CH 200V 7A TO220-3
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IKW30N60T IKW30N60T Infineon Technologies INFN-S-A0001300131-1.pdf?t.download=true&u=5oefqw Description: IKW30N60 - DISCRETE IGBT WITH AN
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 143 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A
Supplier Device Package: PG-TO247-3-21
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/254ns
Switching Energy: 690µJ (on), 770µJ (off)
Test Condition: 400V, 30A, 10.6Ohm, 15V
Gate Charge: 167 nC
Part Status: Active
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 187 W
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MB91F469GBPB-GS-N2-K6 MB91F469GBPB-GS-N2-K6 Infineon Technologies MB91460_Factsheet_8-9-10.pdf Description: IC MCU 32B 2.112MB FLASH 320PBGA
Packaging: Tray
Package / Case: 320-BBGA
Mounting Type: Surface Mount
Speed: 100MHz
Program Memory Size: 2.112MB (2.112M x 8)
RAM Size: 112K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: FR60 RISC
Data Converters: A/D 32x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, WDT
Supplier Device Package: 320-PBGA (27x27)
Number of I/O: 205
DigiKey Programmable: Not Verified
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MB91F469GBPB-GS-N2K6E1 MB91F469GBPB-GS-N2K6E1 Infineon Technologies MB91460_Factsheet_8-9-10.pdf Description: IC MCU 32B 2.112MB FLASH 320PBGA
Packaging: Tray
Package / Case: 320-BBGA
Mounting Type: Surface Mount
Speed: 100MHz
Program Memory Size: 2.112MB (2.112M x 8)
RAM Size: 112K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: FR60 RISC
Data Converters: A/D 32x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, WDT
Supplier Device Package: 320-PBGA (27x27)
Number of I/O: 205
DigiKey Programmable: Not Verified
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MB91F469GAPB-GS-K6 MB91F469GAPB-GS-K6 Infineon Technologies Infineon-CY91F469GA_CY91F469GB_FR60_CY91460G_Series_32_bit_Microcontroller_Datasheet-AdditionalTechnicalInformation-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edd1e21615b&utm_source=cypress&utm_medium=referral&utm_campaign=202 Description: IC MCU 32B 2.112MB FLASH 320PBGA
Packaging: Tray
Package / Case: 320-BBGA
Mounting Type: Surface Mount
Speed: 100MHz
Program Memory Size: 2.112MB (2.112M x 8)
RAM Size: 112K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: FR60 RISC
Data Converters: A/D 32x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, WDT
Supplier Device Package: 320-PBGA (27x27)
Number of I/O: 205
DigiKey Programmable: Not Verified
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MB91F469QAPB-GSK6E1 MB91F469QAPB-GSK6E1 Infineon Technologies Infineon-CY91460Q_Series_FR60_32_bit_Microcontroller_Datasheet-AdditionalTechnicalInformation-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edcbc3460bd Description: IC MCU 32B 2.0625MB FLSH 320PBGA
Produkt ist nicht verfügbar
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IKW50N60T IKW50N60T Infineon Technologies INFNS30103-1.pdf?t.download=true&u=5oefqw Description: IKW50N60 - DISCRETE IGBT WITH AN
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 143 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
Supplier Device Package: PG-TO247-3-21
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/299ns
Switching Energy: 1.2mJ (on), 1.4mJ (off)
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 310 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 333 W
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IKW50N60TA IKW50N60TA Infineon Technologies INFN-S-A0000110252-1.pdf?t.download=true&u=5oefqw Description: IKW50N60 - AUTOMOTIVE IGBT DISCR
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 143 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/299ns
Switching Energy: 1.2mJ (on), 1.4mJ (off)
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 310 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 333 W
Produkt ist nicht verfügbar
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IPP50R199CP IPP50R199CP Infineon Technologies INFNS17019-1.pdf?t.download=true&u=5oefqw Description: IPP50R199 - 500V COOLMOS N-CHANN
Produkt ist nicht verfügbar
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BAT64-04E6433 BAT64-04E6433 Infineon Technologies INFNS11551-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOTT 40V 120MA SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 120mA
Supplier Device Package: PG-SOT23-3-11
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
Produkt ist nicht verfügbar
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BAT64-06E6327 Infineon Technologies INFNS11551-1.pdf?t.download=true&u=5oefqw Description: BAT64 - HIGH SPEED SWITCHING, CL
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Supplier Device Package: PG-SOT23
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BF799WH6327XTSA1 BF799WH6327XTSA1 Infineon Technologies BF799W.pdf Description: RF TRANS NPN 20V 800MHZ SOT323-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 280mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 20V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Frequency - Transition: 800MHz
Noise Figure (dB Typ @ f): 3dB @ 100MHz
Supplier Device Package: PG-SOT323
Part Status: Obsolete
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BF799WE6327 BF799WE6327 Infineon Technologies INFNS10753-1.pdf?t.download=true&u=5oefqw Description: RF TRANSISTOR, NPN
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 280mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 20V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Frequency - Transition: 800MHz
Noise Figure (dB Typ @ f): 3dB @ 100MHz
Supplier Device Package: SOT-323
Part Status: Active
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BF799 Infineon Technologies INFNS17221-1.pdf?t.download=true&u=5oefqw Description: RF TRANSISTOR, NPN
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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IPD075N03LG IPD075N03LG Infineon Technologies INFNS15826-1.pdf?t.download=true&u=5oefqw Description: OPTLMOS N-CHANNEL POWER MOSFET
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6ED003L06F2XUMA2 6ED003L06F2XUMA2 Infineon Technologies Infineon-6ED003L0x_F2-DS-v02_08-EN.pdf?fileId=db3a3043315daf4401316108306d4190 Description: 6ED003L06 - GATE DRIVER
Packaging: Bulk
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 13V ~ 17.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 620 V
Supplier Device Package: P-DSO-28
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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FD1200R17HP4-K_B2 Infineon Technologies INFN-S-A0001441443-1.pdf?t.download=true&u=5oefqw Description: FD1200R17 - IGBT MODULE
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SP000683158 SP000683158 Infineon Technologies Infineon-SPP11N80C3-DS-v02_91-en.pdf?fileId=db3a30432313ff5e0123a9132fee5c9a Description: SPP11N80C3XKSA1 - COOLMOS N-CHAN
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 7.1A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 680µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V
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SPP11N80C3 SPP11N80C3 Infineon Technologies Infineon-SPP11N80C3-DS-v02_91-en.pdf?fileId=db3a30432313ff5e0123a9132fee5c9a Description: COOLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 7.1A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 680µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V
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IDH10S120AKSA1 IDH10S120AKSA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: DIODE SCHOTTKY 1200V 10A TO220-2
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40+14.09 EUR
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BSL307SPL6327HTSA1 BSL307SPL6327HTSA1 Infineon Technologies BSL307SP_Rev+2.0.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a304342c787030142dca7f3721687 Description: MOSFET P-CH 30V 5.5A TSOP-6
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 5.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 40µA
Supplier Device Package: PG-TSOP6-6
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 805 pF @ 25 V
Qualification: AEC-Q101
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1EDI2002ASXUMA2 1EDI2002ASXUMA2 Infineon Technologies 1EDI2002AS-ISO-DS-v03_20.pdf Description: DGT ISO 3.75KV 1CH GT DVR DSO36
Packaging: Cut Tape (CT)
Package / Case: 36-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 3750Vrms
Supplier Device Package: PG-DSO-36-63
Rise / Fall Time (Typ): 30ns, 60ns
Grade: Automotive
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 13V ~ 18V
Qualification: AEC-Q100
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10+13.23 EUR
25+12.30 EUR
100+11.28 EUR
250+10.79 EUR
500+10.49 EUR
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EVAL1EDI60I12AFTOBO1 EVAL1EDI60I12AFTOBO1 Infineon Technologies Description: EVAL-1EDI60I12AF TO DEMONSTRATE
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 1EDI60I12AF
Supplied Contents: Board(s)
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1+141.22 EUR
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1EDI05I12AHXUMA1 1EDI05I12AHXUMA1 Infineon Technologies Infineon-1EDIxxy12AH-DS-v02_00-EN.pdf?fileId=5546d46253f6505701543843c049027b Description: DIGITAL ISO 1CH GATE DVR DSO8-59
Packaging: Bulk
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Supplier Device Package: PG-DSO-8-59
Rise / Fall Time (Typ): 10ns, 9ns
Number of Channels: 1
Voltage - Output Supply: 13V ~ 35V
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1EDI10I12MHXUMA1 1EDI10I12MHXUMA1 Infineon Technologies Infineon-1EDIxxI12MH-DS-v02_00-EN.pdf?fileId=5546d46253f6505701543843b7f30277 Description: DIGITAL ISO 1CH GATE DVR DSO8-59
Packaging: Bulk
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Supplier Device Package: PG-DSO-8-59
Rise / Fall Time (Typ): 10ns, 9ns
Number of Channels: 1
Voltage - Output Supply: 13V ~ 18V
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CY22381SXC-158 CY22381SXC-158 Infineon Technologies download Description: IC CLOCK GENERATOR
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
DigiKey Programmable: Not Verified
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BSC050N03LSGXT BSC050N03LSGXT Infineon Technologies INFNS27219-1.pdf?t.download=true&u=5oefqw Description: BSC050N03 - 12V-300V N-CHANNEL P
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
Produkt ist nicht verfügbar
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IPD050N03L G IPD050N03L G Infineon Technologies INFNS27908-1.pdf?t.download=true&u=5oefqw Description: OPTLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 15 V
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IPD50N03S2-07 IPD50N03S2-07 Infineon Technologies INFNS09529-1.pdf?t.download=true&u=5oefqw Description: OPTLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 50A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 85µA
Supplier Device Package: PG-TO252-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
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BTS118D BTS118D Infineon Technologies INFNS11664-1.pdf?t.download=true&u=5oefqw Description: BTS118 - HITFET, AUTOMOTIVE SMAR
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XDPL8218XUMA1 XDPL8218XUMA1 Infineon Technologies Infineon-XDPL8218-DS-v01_00-EN.pdf?fileId=5546d46266f85d6301670d686dc33676 Description: IC LED DRIVER OFFL PWM 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 66MHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 85°C (TA)
Applications: LED Lighting
Internal Switch(s): Yes
Topology: Flyback
Supplier Device Package: PG-DSO-8-51
Dimming: PWM
Voltage - Supply (Max): 24V
Part Status: Obsolete
Produkt ist nicht verfügbar
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BSS159N H6906 Infineon Technologies INFNS19227-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 160mA, 10V
FET Feature: Depletion Mode
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 26µA
Supplier Device Package: PG-SOT23-3-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 25 V
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BTS3011TEATMA1 BTS3011TEATMA1 Infineon Technologies Infineon-BTS3011TE-DS-v01_00-EN.pdf?fileId=5546d46264a8de7e0164f55355be563e Description: IC PWR SWITCH N-CHAN 1:1 TO252-5
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 10.7mOhm
Input Type: Non-Inverting
Voltage - Load: 3V ~ 28V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 10A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-5
Fault Protection: Over Current, Over Voltage, Short Circuit
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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BAS3005B-02VH6327 BAS3005B-02VH6327 Infineon Technologies INFNS11685-1.pdf?t.download=true&u=5oefqw Description: DIODE SCHOTT 30V 500MA SC79-2-1
Packaging: Bulk
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 5V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: PG-SC79-2-1
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 500 mA
Current - Reverse Leakage @ Vr: 25 µA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
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BAS3005S-02LRHE6327 BAS3005S-02LRHE6327 Infineon Technologies INFNS15528-1.pdf?t.download=true&u=5oefqw Description: DIODE SCHOTT 30V 500MA TSLP-2-17
Packaging: Bulk
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 15pF @ 5V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: PG-TSLP-2-17
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 500 mA
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
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BAS3005S02LRHE6327XTSA1 BAS3005S02LRHE6327XTSA1 Infineon Technologies bas3005s-02lrh.pdf?folderId=db3a304313d846880113def5812204a1&fileId=db3a30431ed1d7b2011f403b235b4ec0 Description: DIODE SCHOTT 30V 500MA TSLP-2-17
Packaging: Bulk
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 15pF @ 5V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: PG-TSLP-2-17
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 500 mA
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
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BCR135TE6327 Infineon Technologies INFNS11572-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT23-3-11
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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IPA60R160P6 IPA60R160P6 Infineon Technologies Infineon-IPX60R160P6-DS-v02_02-EN.pdf?fileId=db3a3043414fd3ef01415efd27711e0b Description: POWER FIELD-EFFECT TRANSISTOR
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 750µA
Supplier Device Package: PG-TO220-3-111
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 100 V
Produkt ist nicht verfügbar
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IPW60R160P6 IPW60R160P6 Infineon Technologies Infineon-IPX60R160P6-DS-v02_02-EN.pdf?fileId=db3a3043414fd3ef01415efd27711e0b Description: POWER FIELD-EFFECT TRANSISTOR
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 750µA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 100 V
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IPW60R160C6 Infineon Technologies INFN-S-A0004583452-1.pdf?t.download=true&u=5oefqw Description: 23.8A, 600V, 0.16OHM, N-CHANNEL
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 11.3A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 750µA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 100 V
Produkt ist nicht verfügbar
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TDA4862G TDA4862G Infineon Technologies Infineon-PFC_DCMICTDA4862G-DS-v02_00-en.pdf?fileId=db3a304412b407950112b417ffae24a3 Description: POWER FACTOR CONTROLLER, CURRENT
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 11V ~ 19V
Mode: Discontinuous Conduction (DCM)
Supplier Device Package: PG-DSO-8-1
Part Status: Active
Produkt ist nicht verfügbar
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BCR555E6433 BCR555E6433 Infineon Technologies INFNS10690-1.pdf?t.download=true&u=5oefqw Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Supplier Device Package: PG-SOT23-3-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
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BCR555 BCR555 Infineon Technologies INFNS17202-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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SN7002W E6433 SN7002W E6433 Infineon Technologies SN7002W_Rev2.5_pdf%5B1%5D.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a3043344adb9d0134569a59ab6195&ack=t Description: MOSFET N-CH 60V 230MA SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 230mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 26µA
Supplier Device Package: PG-SOT323
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SN7002W L6327 SN7002W L6327 Infineon Technologies SN7002W_Rev2.5_pdf%5B1%5D.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a3043344adb9d0134569a59ab6195&ack=t Description: MOSFET N-CH 60V 230MA SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 230mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 26µA
Supplier Device Package: PG-SOT323
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SN7002W L6433 SN7002W L6433 Infineon Technologies SN7002W_Rev2.5_pdf%5B1%5D.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a3043344adb9d0134569a59ab6195&ack=t Description: MOSFET N-CH 60V 230MA SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 230mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 26µA
Supplier Device Package: PG-SOT323
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BTM7710G BTM7710G Infineon Technologies INFNS12358-1.pdf?t.download=true&u=5oefqw Description: INTEGRATED FULL-BRIDGE DRIVER
Features: Slew Rate Controlled, Status Flag
Packaging: Bulk
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 1.8V ~ 42V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-28-22
Fault Protection: Open Load Detect, Over Temperature, Short Circuit, UVLO
Part Status: Obsolete
Produkt ist nicht verfügbar
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BTM7710GPXT Infineon Technologies INFNS12734-1.pdf?t.download=true&u=5oefqw Description: BTM7710 - INTEGRATED FULL-BRIDGE
Features: Slew Rate Controlled, Status Flag
Packaging: Bulk
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Output Type: N/P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 110mOhm
Input Type: Non-Inverting
Voltage - Load: 1.8V ~ 42V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-28-22
Fault Protection: Open Load Detect, Over Temperature, Short Circuit, UVLO
Part Status: Active
Produkt ist nicht verfügbar
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IRAM538-1065AE Infineon Technologies Description: POWER DRIVE MODULE DIP
Produkt ist nicht verfügbar
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IRAM538-1065AS Infineon Technologies Description: POWER DRIVE MODULE DIP
Packaging: Tube
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Current: 10 A
Voltage: 600 V
Produkt ist nicht verfügbar
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FP100R12KT4PBPSA1 FP100R12KT4PBPSA1 Infineon Technologies Description: MOD IGBT LOW PWR ECONO3-3
Packaging: Bulk
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FP100R12KT4PBPSA1 FP100R12KT4PBPSA1 Infineon Technologies Description: MOD IGBT LOW PWR ECONO3-3
Packaging: Tray
Produkt ist nicht verfügbar
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SP001434884 SP001434884 Infineon Technologies Infineon-IPN60R1K0CE-DS-v02_00-EN.pdf?fileId=5546d46253f6505701547aed24095b21 Description: IPN60R1K0CEATMA1 - MOSFET
Packaging: Bulk
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
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BSZ042N04NSGATMA1 BSZ042N04NSGATMA1 Infineon Technologies INFNS30160-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 40V 40A TSDSON-8
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SAA-CIC61508-OSRF5VAA SAA-CIC61508-OSRF5VAA Infineon Technologies INFNS15458-1.pdf?t.download=true&u=5oefqw Description: IC SUPERVISOR PWR SUP SUPPORT
auf Bestellung 2491 Stücke:
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BTS500251TADATMA2 BTS50025-1TAD_Rev1.2_12-5-17.pdf
BTS500251TADATMA2
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 3.9mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 25A
Ratio - Input:Output: 1:1
Supplier Device Package: P/PG-TO-263-7-10
Fault Protection: Over Temperature, Over Voltage, Reverse Battery, Short Circuit
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 4804 Stücke:
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Anzahl Preis
3+6.60 EUR
10+5.00 EUR
25+4.60 EUR
100+4.16 EUR
250+3.95 EUR
500+3.82 EUR
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BTS500551TMB INFNS15719-1.pdf?t.download=true&u=5oefqw
BTS500551TMB
Hersteller: Infineon Technologies
Description: AUTOMOTIVE HIGH SIDE SWITCH
Features: Auto Restart
Packaging: Bulk
Package / Case: TO-220-7 Formed Leads
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 4.4mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 55A
Ratio - Input:Output: 1:1
Supplier Device Package: P-TO220-7-11
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Load, Over Temperature, Over Voltage, Short Circuit, UVLO
Part Status: Active
Produkt ist nicht verfügbar
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BTS50025-1TAC INFN-S-A0003268411-1.pdf?t.download=true&u=5oefqw
BTS50025-1TAC
Hersteller: Infineon Technologies
Description: AUTOMOTIVE HIGH SIDE SWITCH
Packaging: Bulk
Part Status: Active
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Anzahl Preis
50+10.29 EUR
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IPP65R041CFD7XKSA1 Infineon-IPP65R041CFD7-DataSheet-v02_01-EN.pdf?fileId=5546d46272e49d2a01730951a7f844ee
IPP65R041CFD7XKSA1
Hersteller: Infineon Technologies
Description: 650V FET COOLMOS TO247
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 24.8A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.24mA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V
auf Bestellung 489 Stücke:
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Anzahl Preis
2+14.68 EUR
50+8.06 EUR
100+7.43 EUR
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IPP60R600P6XKSA1 DS_IPx60R600P6_2_1.pdf?fileId=db3a30433f2e70c5013f3862b5622681
IPP60R600P6XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 7.3A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 557 pF @ 100 V
auf Bestellung 102154 Stücke:
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Anzahl Preis
494+1.03 EUR
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BUZ73HXKSA1 BUZ73_H.pdf
BUZ73HXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 7A TO220-3
auf Bestellung 5400 Stücke:
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IKW30N60T INFN-S-A0001300131-1.pdf?t.download=true&u=5oefqw
IKW30N60T
Hersteller: Infineon Technologies
Description: IKW30N60 - DISCRETE IGBT WITH AN
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 143 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A
Supplier Device Package: PG-TO247-3-21
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/254ns
Switching Energy: 690µJ (on), 770µJ (off)
Test Condition: 400V, 30A, 10.6Ohm, 15V
Gate Charge: 167 nC
Part Status: Active
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 187 W
Produkt ist nicht verfügbar
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MB91F469GBPB-GS-N2-K6 MB91460_Factsheet_8-9-10.pdf
MB91F469GBPB-GS-N2-K6
Hersteller: Infineon Technologies
Description: IC MCU 32B 2.112MB FLASH 320PBGA
Packaging: Tray
Package / Case: 320-BBGA
Mounting Type: Surface Mount
Speed: 100MHz
Program Memory Size: 2.112MB (2.112M x 8)
RAM Size: 112K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: FR60 RISC
Data Converters: A/D 32x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, WDT
Supplier Device Package: 320-PBGA (27x27)
Number of I/O: 205
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB91F469GBPB-GS-N2K6E1 MB91460_Factsheet_8-9-10.pdf
MB91F469GBPB-GS-N2K6E1
Hersteller: Infineon Technologies
Description: IC MCU 32B 2.112MB FLASH 320PBGA
Packaging: Tray
Package / Case: 320-BBGA
Mounting Type: Surface Mount
Speed: 100MHz
Program Memory Size: 2.112MB (2.112M x 8)
RAM Size: 112K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: FR60 RISC
Data Converters: A/D 32x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, WDT
Supplier Device Package: 320-PBGA (27x27)
Number of I/O: 205
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB91F469GAPB-GS-K6 Infineon-CY91F469GA_CY91F469GB_FR60_CY91460G_Series_32_bit_Microcontroller_Datasheet-AdditionalTechnicalInformation-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edd1e21615b&utm_source=cypress&utm_medium=referral&utm_campaign=202
MB91F469GAPB-GS-K6
Hersteller: Infineon Technologies
Description: IC MCU 32B 2.112MB FLASH 320PBGA
Packaging: Tray
Package / Case: 320-BBGA
Mounting Type: Surface Mount
Speed: 100MHz
Program Memory Size: 2.112MB (2.112M x 8)
RAM Size: 112K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: FR60 RISC
Data Converters: A/D 32x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, WDT
Supplier Device Package: 320-PBGA (27x27)
Number of I/O: 205
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB91F469QAPB-GSK6E1 Infineon-CY91460Q_Series_FR60_32_bit_Microcontroller_Datasheet-AdditionalTechnicalInformation-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edcbc3460bd
MB91F469QAPB-GSK6E1
Hersteller: Infineon Technologies
Description: IC MCU 32B 2.0625MB FLSH 320PBGA
Produkt ist nicht verfügbar
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IKW50N60T INFNS30103-1.pdf?t.download=true&u=5oefqw
IKW50N60T
Hersteller: Infineon Technologies
Description: IKW50N60 - DISCRETE IGBT WITH AN
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 143 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
Supplier Device Package: PG-TO247-3-21
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/299ns
Switching Energy: 1.2mJ (on), 1.4mJ (off)
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 310 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 333 W
Produkt ist nicht verfügbar
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IKW50N60TA INFN-S-A0000110252-1.pdf?t.download=true&u=5oefqw
IKW50N60TA
Hersteller: Infineon Technologies
Description: IKW50N60 - AUTOMOTIVE IGBT DISCR
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 143 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/299ns
Switching Energy: 1.2mJ (on), 1.4mJ (off)
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 310 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 333 W
Produkt ist nicht verfügbar
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IPP50R199CP INFNS17019-1.pdf?t.download=true&u=5oefqw
IPP50R199CP
Hersteller: Infineon Technologies
Description: IPP50R199 - 500V COOLMOS N-CHANN
Produkt ist nicht verfügbar
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BAT64-04E6433 INFNS11551-1.pdf?t.download=true&u=5oefqw
BAT64-04E6433
Hersteller: Infineon Technologies
Description: DIODE ARR SCHOTT 40V 120MA SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 120mA
Supplier Device Package: PG-SOT23-3-11
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
Produkt ist nicht verfügbar
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BAT64-06E6327 INFNS11551-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: BAT64 - HIGH SPEED SWITCHING, CL
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Supplier Device Package: PG-SOT23
Produkt ist nicht verfügbar
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BF799WH6327XTSA1 BF799W.pdf
BF799WH6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 20V 800MHZ SOT323-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 280mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 20V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Frequency - Transition: 800MHz
Noise Figure (dB Typ @ f): 3dB @ 100MHz
Supplier Device Package: PG-SOT323
Part Status: Obsolete
auf Bestellung 608000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4157+0.11 EUR
Mindestbestellmenge: 4157
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BF799WE6327 INFNS10753-1.pdf?t.download=true&u=5oefqw
BF799WE6327
Hersteller: Infineon Technologies
Description: RF TRANSISTOR, NPN
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 280mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 20V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Frequency - Transition: 800MHz
Noise Figure (dB Typ @ f): 3dB @ 100MHz
Supplier Device Package: SOT-323
Part Status: Active
Produkt ist nicht verfügbar
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BF799 INFNS17221-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: RF TRANSISTOR, NPN
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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IPD075N03LG INFNS15826-1.pdf?t.download=true&u=5oefqw
IPD075N03LG
Hersteller: Infineon Technologies
Description: OPTLMOS N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
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6ED003L06F2XUMA2 Infineon-6ED003L0x_F2-DS-v02_08-EN.pdf?fileId=db3a3043315daf4401316108306d4190
6ED003L06F2XUMA2
Hersteller: Infineon Technologies
Description: 6ED003L06 - GATE DRIVER
Packaging: Bulk
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 13V ~ 17.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 620 V
Supplier Device Package: P-DSO-28
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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FD1200R17HP4-K_B2 INFN-S-A0001441443-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: FD1200R17 - IGBT MODULE
auf Bestellung 40 Stücke:
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Anzahl Preis
1+2081.27 EUR
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SP000683158 Infineon-SPP11N80C3-DS-v02_91-en.pdf?fileId=db3a30432313ff5e0123a9132fee5c9a
SP000683158
Hersteller: Infineon Technologies
Description: SPP11N80C3XKSA1 - COOLMOS N-CHAN
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 7.1A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 680µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V
Produkt ist nicht verfügbar
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SPP11N80C3 Infineon-SPP11N80C3-DS-v02_91-en.pdf?fileId=db3a30432313ff5e0123a9132fee5c9a
SPP11N80C3
Hersteller: Infineon Technologies
Description: COOLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 7.1A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 680µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V
Produkt ist nicht verfügbar
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IDH10S120AKSA1 Part_Number_Guide_Web.pdf
IDH10S120AKSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 1200V 10A TO220-2
auf Bestellung 130 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
40+14.09 EUR
Mindestbestellmenge: 40
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BSL307SPL6327HTSA1 BSL307SP_Rev+2.0.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a304342c787030142dca7f3721687
BSL307SPL6327HTSA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 5.5A TSOP-6
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 5.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 40µA
Supplier Device Package: PG-TSOP6-6
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 805 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 666789 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1249+0.39 EUR
Mindestbestellmenge: 1249
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1EDI2002ASXUMA2 1EDI2002AS-ISO-DS-v03_20.pdf
1EDI2002ASXUMA2
Hersteller: Infineon Technologies
Description: DGT ISO 3.75KV 1CH GT DVR DSO36
Packaging: Cut Tape (CT)
Package / Case: 36-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 3750Vrms
Supplier Device Package: PG-DSO-36-63
Rise / Fall Time (Typ): 30ns, 60ns
Grade: Automotive
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 13V ~ 18V
Qualification: AEC-Q100
auf Bestellung 2460 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.95 EUR
10+13.23 EUR
25+12.30 EUR
100+11.28 EUR
250+10.79 EUR
500+10.49 EUR
Mindestbestellmenge: 2
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EVAL1EDI60I12AFTOBO1
EVAL1EDI60I12AFTOBO1
Hersteller: Infineon Technologies
Description: EVAL-1EDI60I12AF TO DEMONSTRATE
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 1EDI60I12AF
Supplied Contents: Board(s)
auf Bestellung 1 Stücke:
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Anzahl Preis
1+141.22 EUR
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1EDI05I12AHXUMA1 Infineon-1EDIxxy12AH-DS-v02_00-EN.pdf?fileId=5546d46253f6505701543843c049027b
1EDI05I12AHXUMA1
Hersteller: Infineon Technologies
Description: DIGITAL ISO 1CH GATE DVR DSO8-59
Packaging: Bulk
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Supplier Device Package: PG-DSO-8-59
Rise / Fall Time (Typ): 10ns, 9ns
Number of Channels: 1
Voltage - Output Supply: 13V ~ 35V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
222+2.19 EUR
Mindestbestellmenge: 222
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1EDI10I12MHXUMA1 Infineon-1EDIxxI12MH-DS-v02_00-EN.pdf?fileId=5546d46253f6505701543843b7f30277
1EDI10I12MHXUMA1
Hersteller: Infineon Technologies
Description: DIGITAL ISO 1CH GATE DVR DSO8-59
Packaging: Bulk
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Supplier Device Package: PG-DSO-8-59
Rise / Fall Time (Typ): 10ns, 9ns
Number of Channels: 1
Voltage - Output Supply: 13V ~ 18V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
213+2.29 EUR
Mindestbestellmenge: 213
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CY22381SXC-158 download
CY22381SXC-158
Hersteller: Infineon Technologies
Description: IC CLOCK GENERATOR
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
DigiKey Programmable: Not Verified
auf Bestellung 18662 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
45+11.22 EUR
Mindestbestellmenge: 45
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BSC050N03LSGXT INFNS27219-1.pdf?t.download=true&u=5oefqw
BSC050N03LSGXT
Hersteller: Infineon Technologies
Description: BSC050N03 - 12V-300V N-CHANNEL P
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
Produkt ist nicht verfügbar
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IPD050N03L G INFNS27908-1.pdf?t.download=true&u=5oefqw
IPD050N03L G
Hersteller: Infineon Technologies
Description: OPTLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 15 V
Produkt ist nicht verfügbar
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IPD50N03S2-07 INFNS09529-1.pdf?t.download=true&u=5oefqw
IPD50N03S2-07
Hersteller: Infineon Technologies
Description: OPTLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 50A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 85µA
Supplier Device Package: PG-TO252-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Produkt ist nicht verfügbar
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BTS118D INFNS11664-1.pdf?t.download=true&u=5oefqw
BTS118D
Hersteller: Infineon Technologies
Description: BTS118 - HITFET, AUTOMOTIVE SMAR
Produkt ist nicht verfügbar
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XDPL8218XUMA1 Infineon-XDPL8218-DS-v01_00-EN.pdf?fileId=5546d46266f85d6301670d686dc33676
XDPL8218XUMA1
Hersteller: Infineon Technologies
Description: IC LED DRIVER OFFL PWM 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 66MHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 85°C (TA)
Applications: LED Lighting
Internal Switch(s): Yes
Topology: Flyback
Supplier Device Package: PG-DSO-8-51
Dimming: PWM
Voltage - Supply (Max): 24V
Part Status: Obsolete
Produkt ist nicht verfügbar
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BSS159N H6906 INFNS19227-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: SMALL SIGNAL N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 160mA, 10V
FET Feature: Depletion Mode
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 26µA
Supplier Device Package: PG-SOT23-3-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 25 V
Produkt ist nicht verfügbar
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BTS3011TEATMA1 Infineon-BTS3011TE-DS-v01_00-EN.pdf?fileId=5546d46264a8de7e0164f55355be563e
BTS3011TEATMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO252-5
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 10.7mOhm
Input Type: Non-Inverting
Voltage - Load: 3V ~ 28V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 10A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-5
Fault Protection: Over Current, Over Voltage, Short Circuit
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.69 EUR
5000+1.65 EUR
7500+1.63 EUR
Mindestbestellmenge: 2500
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BAS3005B-02VH6327 INFNS11685-1.pdf?t.download=true&u=5oefqw
BAS3005B-02VH6327
Hersteller: Infineon Technologies
Description: DIODE SCHOTT 30V 500MA SC79-2-1
Packaging: Bulk
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 5V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: PG-SC79-2-1
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 500 mA
Current - Reverse Leakage @ Vr: 25 µA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 229126 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3063+0.16 EUR
Mindestbestellmenge: 3063
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BAS3005S-02LRHE6327 INFNS15528-1.pdf?t.download=true&u=5oefqw
BAS3005S-02LRHE6327
Hersteller: Infineon Technologies
Description: DIODE SCHOTT 30V 500MA TSLP-2-17
Packaging: Bulk
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 15pF @ 5V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: PG-TSLP-2-17
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 500 mA
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
auf Bestellung 72276 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2371+0.21 EUR
Mindestbestellmenge: 2371
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BAS3005S02LRHE6327XTSA1 bas3005s-02lrh.pdf?folderId=db3a304313d846880113def5812204a1&fileId=db3a30431ed1d7b2011f403b235b4ec0
BAS3005S02LRHE6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTT 30V 500MA TSLP-2-17
Packaging: Bulk
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 15pF @ 5V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: PG-TSLP-2-17
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 500 mA
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
auf Bestellung 360000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2894+0.16 EUR
Mindestbestellmenge: 2894
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BCR135TE6327 INFNS11572-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT23-3-11
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
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IPA60R160P6 Infineon-IPX60R160P6-DS-v02_02-EN.pdf?fileId=db3a3043414fd3ef01415efd27711e0b
IPA60R160P6
Hersteller: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 750µA
Supplier Device Package: PG-TO220-3-111
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 100 V
Produkt ist nicht verfügbar
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IPW60R160P6 Infineon-IPX60R160P6-DS-v02_02-EN.pdf?fileId=db3a3043414fd3ef01415efd27711e0b
IPW60R160P6
Hersteller: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 750µA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 100 V
Produkt ist nicht verfügbar
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IPW60R160C6 INFN-S-A0004583452-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: 23.8A, 600V, 0.16OHM, N-CHANNEL
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 11.3A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 750µA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 100 V
Produkt ist nicht verfügbar
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TDA4862G Infineon-PFC_DCMICTDA4862G-DS-v02_00-en.pdf?fileId=db3a304412b407950112b417ffae24a3
TDA4862G
Hersteller: Infineon Technologies
Description: POWER FACTOR CONTROLLER, CURRENT
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 11V ~ 19V
Mode: Discontinuous Conduction (DCM)
Supplier Device Package: PG-DSO-8-1
Part Status: Active
Produkt ist nicht verfügbar
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BCR555E6433 INFNS10690-1.pdf?t.download=true&u=5oefqw
BCR555E6433
Hersteller: Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Supplier Device Package: PG-SOT23-3-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
auf Bestellung 510000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4418+0.11 EUR
Mindestbestellmenge: 4418
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BCR555 INFNS17202-1.pdf?t.download=true&u=5oefqw
BCR555
Hersteller: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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SN7002W E6433 SN7002W_Rev2.5_pdf%5B1%5D.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a3043344adb9d0134569a59ab6195&ack=t
SN7002W E6433
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 230MA SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 230mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 26µA
Supplier Device Package: PG-SOT323
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SN7002W L6327 SN7002W_Rev2.5_pdf%5B1%5D.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a3043344adb9d0134569a59ab6195&ack=t
SN7002W L6327
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 230MA SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 230mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 26µA
Supplier Device Package: PG-SOT323
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SN7002W L6433 SN7002W_Rev2.5_pdf%5B1%5D.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a3043344adb9d0134569a59ab6195&ack=t
SN7002W L6433
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 230MA SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 230mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 26µA
Supplier Device Package: PG-SOT323
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BTM7710G INFNS12358-1.pdf?t.download=true&u=5oefqw
BTM7710G
Hersteller: Infineon Technologies
Description: INTEGRATED FULL-BRIDGE DRIVER
Features: Slew Rate Controlled, Status Flag
Packaging: Bulk
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 1.8V ~ 42V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-28-22
Fault Protection: Open Load Detect, Over Temperature, Short Circuit, UVLO
Part Status: Obsolete
Produkt ist nicht verfügbar
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BTM7710GPXT INFNS12734-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: BTM7710 - INTEGRATED FULL-BRIDGE
Features: Slew Rate Controlled, Status Flag
Packaging: Bulk
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Output Type: N/P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 110mOhm
Input Type: Non-Inverting
Voltage - Load: 1.8V ~ 42V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-28-22
Fault Protection: Open Load Detect, Over Temperature, Short Circuit, UVLO
Part Status: Active
Produkt ist nicht verfügbar
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IRAM538-1065AE
Hersteller: Infineon Technologies
Description: POWER DRIVE MODULE DIP
Produkt ist nicht verfügbar
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IRAM538-1065AS
Hersteller: Infineon Technologies
Description: POWER DRIVE MODULE DIP
Packaging: Tube
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Current: 10 A
Voltage: 600 V
Produkt ist nicht verfügbar
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FP100R12KT4PBPSA1
FP100R12KT4PBPSA1
Hersteller: Infineon Technologies
Description: MOD IGBT LOW PWR ECONO3-3
Packaging: Bulk
auf Bestellung 139 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+207.80 EUR
Mindestbestellmenge: 3
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FP100R12KT4PBPSA1
FP100R12KT4PBPSA1
Hersteller: Infineon Technologies
Description: MOD IGBT LOW PWR ECONO3-3
Packaging: Tray
Produkt ist nicht verfügbar
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SP001434884 Infineon-IPN60R1K0CE-DS-v02_00-EN.pdf?fileId=5546d46253f6505701547aed24095b21
SP001434884
Hersteller: Infineon Technologies
Description: IPN60R1K0CEATMA1 - MOSFET
Packaging: Bulk
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
Produkt ist nicht verfügbar
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BSZ042N04NSGATMA1 INFNS30160-1.pdf?t.download=true&u=5oefqw
BSZ042N04NSGATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 40A TSDSON-8
auf Bestellung 41363 Stücke:
Lieferzeit 10-14 Tag (e)
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SAA-CIC61508-OSRF5VAA INFNS15458-1.pdf?t.download=true&u=5oefqw
SAA-CIC61508-OSRF5VAA
Hersteller: Infineon Technologies
Description: IC SUPERVISOR PWR SUP SUPPORT
auf Bestellung 2491 Stücke:
Lieferzeit 10-14 Tag (e)
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