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IPD25N06S2-40ATMA1 IPD25N06S2-40ATMA1 Infineon Technologies INFNS09555-1.pdf?t.download=true&u=5oefqw Description: IPD25N06 - 55V-60V N-CHANNEL AUT
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 26µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 513 pF @ 25 V
Produkt ist nicht verfügbar
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IPD25N06S4L-30ATMA2 IPD25N06S4L-30ATMA2 Infineon Technologies INFN-S-A0002864748-1.pdf?t.download=true&u=5oefqw Description: IPD25N06 - 55V-60V N-CHANNEL AUT
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 25A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 8µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 25 V
Produkt ist nicht verfügbar
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SPP15P10P H SPP15P10P H Infineon Technologies Infineon-SPP15P10P_H_G-DS-v01_07-en.pdf?fileId=db3a3043321e49940132246d96be5a7e Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 10.6A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1.54mA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V
Produkt ist nicht verfügbar
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IRFR3709ZTRLPBF IRFR3709ZTRLPBF Infineon Technologies irfr3709zpbf.pdf?fileId=5546d462533600a401535631a47a20c5 Description: MOSFET N-CH 30V 86A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 15 V
Produkt ist nicht verfügbar
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BBY6605WE6327 BBY6605WE6327 Infineon Technologies INFNS11657-1.pdf?t.download=true&u=5oefqw Description: VARIABLE CAPACITANCE DIODE
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CY90387SPMT-GS-239E1 CY90387SPMT-GS-239E1 Infineon Technologies download Description: IC MCU 16BIT 64KB MROM 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, SCI, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AUIPS71451GTR AUIPS71451GTR Infineon Technologies auips71451g.pdf?fileId=5546d462533600a4015355a7f7461332 Description: IC PWR SWITCH N-CHANNEL 1:1 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 75mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-906
Fault Protection: Current Limiting (Fixed), Over Temperature
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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1EDN8511B 1EDN8511B Infineon Technologies Infineon-1EDN751x_1EDN851x_Rev%202.0-DS-v02_01-EN.pdf?fileId=5546d462576f34750157e176df0b3ca7 Description: 1EDN8511 - GATE DRIVER
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1EDN8550B 1EDN8550B Infineon Technologies Infineon-1EDN8550B-DS-v02_00-EN.pdf?fileId=5546d46262b31d2e01635da0c1c02652 Description: 1EDN8550 - GATE DRIVER
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SP001690382 Infineon Technologies Infineon-1EDN7550B-DS-v02_00-EN.pdf?fileId=5546d46262b31d2e01635d9799ef264f Description: 1EDN7550 - GATE DRIVER
Packaging: Bulk
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: PG-SOT23-6-3
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Single
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
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1EDN7550B 1EDN7550B Infineon Technologies Infineon-1EDN7550B-DS-v02_00-EN.pdf?fileId=5546d46262b31d2e01635d9799ef264f Description: 1EDN7550 - GATE DRIVER
Packaging: Bulk
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: PG-SOT23-6-3
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Single
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
Produkt ist nicht verfügbar
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IPD60R1K5PFD7SAUMA1 IPD60R1K5PFD7SAUMA1 Infineon Technologies Infineon-IPD60R1K5PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e225df2d46744 Description: MOSFET N-CH 600V 3.6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 700mA, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 40µA
Supplier Device Package: PG-TO252-3-344
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 169 pF @ 400 V
auf Bestellung 2422 Stücke:
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10+1.8 EUR
16+1.14 EUR
100+0.74 EUR
500+0.58 EUR
1000+0.52 EUR
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IPD60R210PFD7SAUMA1 IPD60R210PFD7SAUMA1 Infineon Technologies Infineon-IPD60R210PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e226717c7674a Description: MOSFET N-CH 600V 16A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 4.9A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 240µA
Supplier Device Package: PG-TO252-3-344
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V
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6+3.47 EUR
10+2.22 EUR
100+1.51 EUR
500+1.21 EUR
1000+1.17 EUR
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IPD60R2K0PFD7SAUMA1 IPD60R2K0PFD7SAUMA1 Infineon Technologies Infineon-IPD60R2K0PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e226704e76747 Description: MOSFET N-CH 600V 3A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 30µA
Supplier Device Package: PG-TO252-3-344
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 134 pF @ 400 V
auf Bestellung 4980 Stücke:
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100+0.58 EUR
500+0.52 EUR
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BSD316SNH6327XTSA1 BSD316SNH6327XTSA1 Infineon Technologies Infineon-BSD316SN-DS-v02_04-en.pdf?fileId=db3a30431add1d95011afc90c46a0521 Description: MOSFET N-CH 30V 1.4A SOT363-6
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 3.7µA
Supplier Device Package: PG-SOT363-PO
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 94 pF @ 15 V
Qualification: AEC-Q101
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3000+0.12 EUR
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BSD316SNH6327XTSA1 BSD316SNH6327XTSA1 Infineon Technologies Infineon-BSD316SN-DS-v02_04-en.pdf?fileId=db3a30431add1d95011afc90c46a0521 Description: MOSFET N-CH 30V 1.4A SOT363-6
Packaging: Cut Tape (CT)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 3.7µA
Supplier Device Package: PG-SOT363-PO
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 94 pF @ 15 V
Qualification: AEC-Q101
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57+0.31 EUR
108+0.16 EUR
1000+0.15 EUR
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TLE5027CE6747HAMA1 Infineon Technologies TLE5027C_PB_7-2-13.pdf Description: SENSOR MAGNETORESISTIVE PWM 3SIP
Packaging: Bulk
Package / Case: 3-SSIP Module
Output Type: PWM
Mounting Type: Through Hole
Axis: X, Y, Z
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Magnetoresistive
Supplier Device Package: PG-SSO-3-92
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q100
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135+3.61 EUR
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TLD5190VOLTDEMOTOBO1 TLD5190VOLTDEMOTOBO1 Infineon Technologies Description: H-BRIDGE MINI VOLTAGE REGULATOR
Packaging: Bulk
Voltage - Output: 3.7V ~ 25V
Voltage - Input: 5V ~ 28V
Utilized IC / Part: TLD5190
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Active
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IPD80R900P7 Infineon Technologies Infineon-IPD80R900P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b4287da753ee9 Description: POWER FIELD-EFFECT TRANSISTOR
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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TLI493DW2BWA0XTMA1 TLI493DW2BWA0XTMA1 Infineon Technologies Infineon-TLI493D-W2BW-DataSheet-v01_00-EN.pdf?fileId=5546d46273a5366f0173b9bc938d2e1d Description: MAGNETIC SWITCH PROG 5WLCSP
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: 5-UFBGA, WLCSP
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Programmable
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 3.5V
Technology: Hall Effect
Sensing Range: ±160mT
Current - Supply (Max): 5mA
Supplier Device Package: 5-WLCSP (1.13x0.93)
Test Condition: -40°C ~ 125°C
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TLI493DW2BWA3XTMA1 TLI493DW2BWA3XTMA1 Infineon Technologies Infineon-TLI493D-W2BW-DataSheet-v01_00-EN.pdf?fileId=5546d46273a5366f0173b9bc938d2e1d Description: MAGNETIC SWITCH PROG 5WLCSP
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: 5-UFBGA, WLCSP
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 3.5V
Technology: Hall Effect
Sensing Range: ±160mT
Current - Supply (Max): 5mA
Supplier Device Package: 5-WLCSP (1.13x0.93)
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TLI493DW2BWA2XTMA1 TLI493DW2BWA2XTMA1 Infineon Technologies Infineon-TLI493D-W2BW-DataSheet-v01_00-EN.pdf?fileId=5546d46273a5366f0173b9bc938d2e1d Description: MAGNETIC SWITCH PROG 5WLCSP
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: 5-UFBGA, WLCSP
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 3.5V
Technology: Hall Effect
Sensing Range: ±160mT
Current - Supply (Max): 5mA
Supplier Device Package: 5-WLCSP (1.13x0.93)
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TLI493DW2BWA1XTMA1 TLI493DW2BWA1XTMA1 Infineon Technologies Infineon-TLI493D-W2BW-DataSheet-v01_00-EN.pdf?fileId=5546d46273a5366f0173b9bc938d2e1d Description: SEN HALL EFFT OPEN DRAIN 5-WLCSP
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: 5-UFBGA, WLCSP
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Programmable
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 3.5V
Technology: Hall Effect
Sensing Range: ±160mT
Current - Supply (Max): 5mA
Supplier Device Package: 5-WLCSP (1.13x0.93)
Test Condition: -40°C ~ 125°C
Produkt ist nicht verfügbar
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CY7C107D-10VXI CY7C107D-10VXI Infineon Technologies Infineon-CY7C107D_CY7C1007D_1-Mbit_(1M_x_1)_Static_RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebf2ac23343&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 1MBIT PARALLEL 28SOJ
Packaging: Tube
Package / Case: 28-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-SOJ
Part Status: Active
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 1
DigiKey Programmable: Not Verified
auf Bestellung 10879 Stücke:
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1+18.16 EUR
10+15.5 EUR
25+14.58 EUR
52+13.89 EUR
104+13.29 EUR
260+12.54 EUR
520+12.03 EUR
1040+11.55 EUR
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CY15B004Q-SXET CY15B004Q-SXET Infineon Technologies CY15B004Q_RevC_6-4-19.pdf Description: IC FRAM 4KBIT SPI 16MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 16 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Grade: Automotive
Memory Interface: SPI
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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BAS70-05E6433 BAS70-05E6433 Infineon Technologies INFNS11040-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOTT 70V 70MA SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Produkt ist nicht verfügbar
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BAS70-05E6327 Infineon Technologies INFNS11040-1.pdf?t.download=true&u=5oefqw Description: BAS70 - HIGH SPEED SWITCHING, CL
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT23-3-11
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Produkt ist nicht verfügbar
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IPI70N10SL16AKSA1 IPI70N10SL16AKSA1 Infineon Technologies Infineon-IPP_B_I70N10SL_16-DS-v01_01-en.pdf?folderId=db3a304412b407950112b42a6a0a4339&fileId=db3a304412b407950112b42a72ce4342&ack=t Description: MOSFET N-CH 100V 70A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 50A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 2V @ 2mA
Supplier Device Package: PG-TO262-3
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4540 pF @ 25 V
Qualification: AEC-Q101
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C167CSL16M3VCAFXQLA1 C167CSL16M3VCAFXQLA1 Infineon Technologies C167CS-L16M3V_Oct2001.pdf Description: IC MCU 16BIT ROMLESS 144MQFP
Packaging: Bulk
Package / Case: 144-BQFP
Mounting Type: Surface Mount
Speed: 16MHz
RAM Size: 11K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 24x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-144-8
Part Status: Discontinued at Digi-Key
Number of I/O: 111
DigiKey Programmable: Not Verified
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SAF-C167CS-L16M3V SAF-C167CS-L16M3V Infineon Technologies INFNS22050-1.pdf?t.download=true&u=5oefqw Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 144-BQFP
Mounting Type: Surface Mount
Speed: 16MHz
RAM Size: 11K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 24x10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-144-6
Part Status: Active
Number of I/O: 111
DigiKey Programmable: Not Verified
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SAF-C167CS-L16M3VC SAF-C167CS-L16M3VC Infineon Technologies INFNS22050-1.pdf?t.download=true&u=5oefqw Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 144-BQFP
Mounting Type: Surface Mount
Speed: 16MHz
RAM Size: 11K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 24x10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-144-6
Part Status: Active
Number of I/O: 111
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F167CSL16M3VCAZXP Infineon Technologies Description: 16-BIT MICROCONTROLLER
Packaging: Bulk
Part Status: Obsolete
DigiKey Programmable: Not Verified
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BFP540H6327XTSA1 BFP540H6327XTSA1 Infineon Technologies Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920 Description: RF TRANS NPN 5V 30GHZ PG-SOT-343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 16dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V
Frequency - Transition: 30GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Obsolete
Produkt ist nicht verfügbar
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S25FL256SAGMFB010 S25FL256SAGMFB010 Infineon Technologies infineon-s25fl128s-s25fl256s-128-mb-16-mb-256-mb-32-mb-fl-s-flash-spi-multi-io-3-v-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Grade: Automotive
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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S25FL064LABMFB010 S25FL064LABMFB010 Infineon Technologies Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 64MBIT SPI/QUAD 8SOIC
Packaging: Tray
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Grade: Automotive
Part Status: Active
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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S25FL064LABMFB000 S25FL064LABMFB000 Infineon Technologies Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 64MBIT SPI/QUAD 16SOIC
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S25FL128LDPMFB003 S25FL128LDPMFB003 Infineon Technologies Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Description: IC FLASH 128MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Active
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 16M x 8
Produkt ist nicht verfügbar
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S25FL128LDPMFB000 S25FL128LDPMFB000 Infineon Technologies Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Description: IC FLASH 128MBIT SPI/QUAD 16SOIC
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S25FL128SDPMFB013 S25FL128SDPMFB013 Infineon Technologies Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Description: IC FLASH 128MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
Produkt ist nicht verfügbar
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S25FS256SAGMFB003 S25FS256SAGMFB003 Infineon Technologies Infineon-S25FS128S_S25FS256S_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_MirrorBit(R)_Non-Volatile_Flash-DataSheet-v14_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ed6b5ab5758&utm_source=cypress&utm_medium=referral&utm_campaign Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Active
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
Produkt ist nicht verfügbar
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BSS214NWH6327 BSS214NWH6327 Infineon Technologies INFNS16757-1.pdf?t.download=true&u=5oefqw Description: BSS214 - 250V-600V SMALL SIGNAL
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 3.7µA
Supplier Device Package: PG-SOT323-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 143 pF @ 10 V
Produkt ist nicht verfügbar
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BSS214NW L6327 BSS214NW L6327 Infineon Technologies BSS214NW_Rev2.1.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30431b3e89eb011b695aebc01bde Description: MOSFET N-CH 20V 1.5A SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 3.7µA
Supplier Device Package: PG-SOT323
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 143 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPN60R2K1CEATMA1 IPN60R2K1CEATMA1 Infineon Technologies Infineon-IPN60R2K1CE-DS-v02_00-EN.pdf?fileId=5546d46253f6505701547af64ab85b44 Description: MOSFET N-CH 600V 3.7A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 800mA, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: PG-SOT223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
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IPN60R1K5CEATMA1 IPN60R1K5CEATMA1 Infineon Technologies Infineon-IPN60R1K5CE-DS-v02_00-EN.pdf?fileId=5546d46253f6505701547af653155b49 Description: MOSFET N-CH 600V 5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-SOT223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V
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IPN60R1K5CEATMA1 IPN60R1K5CEATMA1 Infineon Technologies Infineon-IPN60R1K5CE-DS-v02_00-EN.pdf?fileId=5546d46253f6505701547af653155b49 Description: MOSFET N-CH 600V 5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-SOT223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V
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IPN60R1K0CEATMA1 IPN60R1K0CEATMA1 Infineon Technologies Infineon-IPN60R1K0CE-DS-v02_00-EN.pdf?fileId=5546d46253f6505701547aed24095b21 Description: MOSFET N-CH 600V 6.8A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: PG-SOT223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
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IPN60R2K1CE IPN60R2K1CE Infineon Technologies INFN-S-A0002456420-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 800mA, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: PG-SOT223-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
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IPN60R1K5PFD7SATMA1 IPN60R1K5PFD7SATMA1 Infineon Technologies Infineon-IPN60R1K5PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e22796eb16753 Description: MOSFET N-CH 600V 3.6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 700mA, 10V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 40µA
Supplier Device Package: PG-SOT223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 169 pF @ 400 V
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IPN60R1K5PFD7SATMA1 IPN60R1K5PFD7SATMA1 Infineon Technologies Infineon-IPN60R1K5PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e22796eb16753 Description: MOSFET N-CH 600V 3.6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 700mA, 10V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 40µA
Supplier Device Package: PG-SOT223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 169 pF @ 400 V
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14+1.34 EUR
20+0.89 EUR
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500+0.46 EUR
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BSZ12DN20NS3G BSZ12DN20NS3G Infineon Technologies INFNS16246-1.pdf?t.download=true&u=5oefqw Description: BSZ12DN20 - 12V-300V N-CHANNEL P
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 5.7A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
Produkt ist nicht verfügbar
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IPN70R750P7SATMA1 IPN70R750P7SATMA1 Infineon Technologies Infineon-IPN70R750P7S-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f526738e46b7a Description: MOSFET N-CH 700V 6.5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 1.4A, 10V
Power Dissipation (Max): 6.7W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 306 pF @ 400 V
auf Bestellung 8085 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.76 EUR
16+1.11 EUR
100+0.73 EUR
500+0.56 EUR
1000+0.51 EUR
Mindestbestellmenge: 10
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IPN70R750P7S Infineon Technologies Infineon-TLE4264-2G-DS-v02_60-EN.pdf?fileId=5546d46258fc0bc101595f6960991f2d Description: IPN70R750 - 650V AND 700V COOLMO
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPN70R1K5CEATMA1 IPN70R1K5CEATMA1 Infineon Technologies Infineon-IPN70R1K5CE-DS-v02_00-EN.pdf?fileId=5546d46253f6505701547aff80a65b6f Description: MOSFET N-CH 700V 5.4A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-SOT223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.72 EUR
17+1.07 EUR
100+0.7 EUR
500+0.54 EUR
1000+0.49 EUR
Mindestbestellmenge: 11
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IPN70R1K5CE Infineon Technologies Infineon-IPN70R1K5CE-DS-v02_00-EN.pdf?fileId=5546d46253f6505701547aff80a65b6f Description: SMALL SIGNAL FIELD-EFFECT TRANSI
Packaging: Bulk
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
Produkt ist nicht verfügbar
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IPN70R1K0CEATMA1 IPN70R1K0CEATMA1 Infineon Technologies Infineon-IPN70R1K0CE-DS-v02_00-EN.pdf?fileId=5546d462580663ef015825731b81712d Description: MOSFET N-CH 700V 7.4A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-SOT223
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V
Produkt ist nicht verfügbar
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TLE5012BE5000FUMA1 TLE5012BE5000FUMA1 Infineon Technologies Infineon-TLE5012B_Exxxx-DS-v02_00-en.pdf?fileId=db3a304334fac4c601350f31c43c433f Description: SENSOR ANGLE 360DEG SMD
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: SENT, SPI
Operating Temperature: -40°C ~ 150°C
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-DSO-8
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Last Time Buy
auf Bestellung 76093 Stücke:
Lieferzeit 10-14 Tag (e)
104+4.36 EUR
Mindestbestellmenge: 104
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TLE5012FUMA1 Infineon Technologies TLE5012.pdf Description: POSITION&CURRENT SENSORS
Packaging: Bulk
Part Status: Not For New Designs
auf Bestellung 22500 Stücke:
Lieferzeit 10-14 Tag (e)
60+7.55 EUR
Mindestbestellmenge: 60
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TLE5014P16DXUMA1 TLE5014P16DXUMA1 Infineon Technologies Infineon-TLE5014C_P_S_16D-DataSheet-v01_00-EN.pdf?fileId=5546d46276fb756a01771a9fd67f3a19 Description: SENSOR ANGLE 360DEG GULL WING
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: PWM
Operating Temperature: -40°C ~ 125°C
Termination Style: Gull Wing
Voltage - Supply: 4.2V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle, Linear, Rotary
Supplier Device Package: PG-TDSO-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Cosine, Sine
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE5014P16DXUMA1 TLE5014P16DXUMA1 Infineon Technologies Infineon-TLE5014C_P_S_16D-DataSheet-v01_00-EN.pdf?fileId=5546d46276fb756a01771a9fd67f3a19 Description: SENSOR ANGLE 360DEG GULL WING
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: PWM
Operating Temperature: -40°C ~ 125°C
Termination Style: Gull Wing
Voltage - Supply: 4.2V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle, Linear, Rotary
Supplier Device Package: PG-TDSO-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Cosine, Sine
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 1523 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.88 EUR
5+10.73 EUR
10+10.3 EUR
25+9.79 EUR
50+9.44 EUR
100+9.11 EUR
500+8.86 EUR
Mindestbestellmenge: 2
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CY7C1512V18-250BZXC CY7C1512V18-250BZXC Infineon Technologies CY7C1510%2C12%2C14%2C25V18.pdf Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
auf Bestellung 1089 Stücke:
Lieferzeit 10-14 Tag (e)
2+275.99 EUR
Mindestbestellmenge: 2
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IPD25N06S2-40ATMA1 INFNS09555-1.pdf?t.download=true&u=5oefqw
IPD25N06S2-40ATMA1
Hersteller: Infineon Technologies
Description: IPD25N06 - 55V-60V N-CHANNEL AUT
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 26µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 513 pF @ 25 V
Produkt ist nicht verfügbar
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IPD25N06S4L-30ATMA2 INFN-S-A0002864748-1.pdf?t.download=true&u=5oefqw
IPD25N06S4L-30ATMA2
Hersteller: Infineon Technologies
Description: IPD25N06 - 55V-60V N-CHANNEL AUT
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 25A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 8µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 25 V
Produkt ist nicht verfügbar
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SPP15P10P H Infineon-SPP15P10P_H_G-DS-v01_07-en.pdf?fileId=db3a3043321e49940132246d96be5a7e
SPP15P10P H
Hersteller: Infineon Technologies
Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 10.6A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1.54mA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V
Produkt ist nicht verfügbar
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IRFR3709ZTRLPBF irfr3709zpbf.pdf?fileId=5546d462533600a401535631a47a20c5
IRFR3709ZTRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 86A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 15 V
Produkt ist nicht verfügbar
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BBY6605WE6327 INFNS11657-1.pdf?t.download=true&u=5oefqw
BBY6605WE6327
Hersteller: Infineon Technologies
Description: VARIABLE CAPACITANCE DIODE
auf Bestellung 14939 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1876+0.27 EUR
Mindestbestellmenge: 1876
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CY90387SPMT-GS-239E1 download
CY90387SPMT-GS-239E1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 64KB MROM 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, SCI, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AUIPS71451GTR auips71451g.pdf?fileId=5546d462533600a4015355a7f7461332
AUIPS71451GTR
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHANNEL 1:1 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 75mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-906
Fault Protection: Current Limiting (Fixed), Over Temperature
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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1EDN8511B Infineon-1EDN751x_1EDN851x_Rev%202.0-DS-v02_01-EN.pdf?fileId=5546d462576f34750157e176df0b3ca7
1EDN8511B
Hersteller: Infineon Technologies
Description: 1EDN8511 - GATE DRIVER
Produkt ist nicht verfügbar
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1EDN8550B Infineon-1EDN8550B-DS-v02_00-EN.pdf?fileId=5546d46262b31d2e01635da0c1c02652
1EDN8550B
Hersteller: Infineon Technologies
Description: 1EDN8550 - GATE DRIVER
Produkt ist nicht verfügbar
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SP001690382 Infineon-1EDN7550B-DS-v02_00-EN.pdf?fileId=5546d46262b31d2e01635d9799ef264f
Hersteller: Infineon Technologies
Description: 1EDN7550 - GATE DRIVER
Packaging: Bulk
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: PG-SOT23-6-3
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Single
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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1EDN7550B Infineon-1EDN7550B-DS-v02_00-EN.pdf?fileId=5546d46262b31d2e01635d9799ef264f
1EDN7550B
Hersteller: Infineon Technologies
Description: 1EDN7550 - GATE DRIVER
Packaging: Bulk
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: PG-SOT23-6-3
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Single
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
Produkt ist nicht verfügbar
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IPD60R1K5PFD7SAUMA1 Infineon-IPD60R1K5PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e225df2d46744
IPD60R1K5PFD7SAUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 3.6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 700mA, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 40µA
Supplier Device Package: PG-TO252-3-344
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 169 pF @ 400 V
auf Bestellung 2422 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.8 EUR
16+1.14 EUR
100+0.74 EUR
500+0.58 EUR
1000+0.52 EUR
Mindestbestellmenge: 10
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IPD60R210PFD7SAUMA1 Infineon-IPD60R210PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e226717c7674a
IPD60R210PFD7SAUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 16A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 4.9A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 240µA
Supplier Device Package: PG-TO252-3-344
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V
auf Bestellung 12515 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.47 EUR
10+2.22 EUR
100+1.51 EUR
500+1.21 EUR
1000+1.17 EUR
Mindestbestellmenge: 6
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IPD60R2K0PFD7SAUMA1 Infineon-IPD60R2K0PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e226704e76747
IPD60R2K0PFD7SAUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 3A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 30µA
Supplier Device Package: PG-TO252-3-344
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 134 pF @ 400 V
auf Bestellung 4980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.81 EUR
100+0.58 EUR
500+0.52 EUR
1000+0.48 EUR
Mindestbestellmenge: 22
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BSD316SNH6327XTSA1 Infineon-BSD316SN-DS-v02_04-en.pdf?fileId=db3a30431add1d95011afc90c46a0521
BSD316SNH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 1.4A SOT363-6
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 3.7µA
Supplier Device Package: PG-SOT363-PO
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 94 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.12 EUR
Mindestbestellmenge: 3000
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BSD316SNH6327XTSA1 Infineon-BSD316SN-DS-v02_04-en.pdf?fileId=db3a30431add1d95011afc90c46a0521
BSD316SNH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 1.4A SOT363-6
Packaging: Cut Tape (CT)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 3.7µA
Supplier Device Package: PG-SOT363-PO
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 94 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 5735 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
38+0.48 EUR
57+0.31 EUR
108+0.16 EUR
1000+0.15 EUR
Mindestbestellmenge: 38
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TLE5027CE6747HAMA1 TLE5027C_PB_7-2-13.pdf
Hersteller: Infineon Technologies
Description: SENSOR MAGNETORESISTIVE PWM 3SIP
Packaging: Bulk
Package / Case: 3-SSIP Module
Output Type: PWM
Mounting Type: Through Hole
Axis: X, Y, Z
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Magnetoresistive
Supplier Device Package: PG-SSO-3-92
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q100
auf Bestellung 284 Stücke:
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Anzahl Preis
135+3.61 EUR
Mindestbestellmenge: 135
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TLD5190VOLTDEMOTOBO1
TLD5190VOLTDEMOTOBO1
Hersteller: Infineon Technologies
Description: H-BRIDGE MINI VOLTAGE REGULATOR
Packaging: Bulk
Voltage - Output: 3.7V ~ 25V
Voltage - Input: 5V ~ 28V
Utilized IC / Part: TLD5190
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Active
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+325.9 EUR
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IPD80R900P7 Infineon-IPD80R900P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b4287da753ee9
Hersteller: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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TLI493DW2BWA0XTMA1 Infineon-TLI493D-W2BW-DataSheet-v01_00-EN.pdf?fileId=5546d46273a5366f0173b9bc938d2e1d
TLI493DW2BWA0XTMA1
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH PROG 5WLCSP
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: 5-UFBGA, WLCSP
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Programmable
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 3.5V
Technology: Hall Effect
Sensing Range: ±160mT
Current - Supply (Max): 5mA
Supplier Device Package: 5-WLCSP (1.13x0.93)
Test Condition: -40°C ~ 125°C
Produkt ist nicht verfügbar
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TLI493DW2BWA3XTMA1 Infineon-TLI493D-W2BW-DataSheet-v01_00-EN.pdf?fileId=5546d46273a5366f0173b9bc938d2e1d
TLI493DW2BWA3XTMA1
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH PROG 5WLCSP
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: 5-UFBGA, WLCSP
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 3.5V
Technology: Hall Effect
Sensing Range: ±160mT
Current - Supply (Max): 5mA
Supplier Device Package: 5-WLCSP (1.13x0.93)
Produkt ist nicht verfügbar
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TLI493DW2BWA2XTMA1 Infineon-TLI493D-W2BW-DataSheet-v01_00-EN.pdf?fileId=5546d46273a5366f0173b9bc938d2e1d
TLI493DW2BWA2XTMA1
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH PROG 5WLCSP
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: 5-UFBGA, WLCSP
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 3.5V
Technology: Hall Effect
Sensing Range: ±160mT
Current - Supply (Max): 5mA
Supplier Device Package: 5-WLCSP (1.13x0.93)
Produkt ist nicht verfügbar
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TLI493DW2BWA1XTMA1 Infineon-TLI493D-W2BW-DataSheet-v01_00-EN.pdf?fileId=5546d46273a5366f0173b9bc938d2e1d
TLI493DW2BWA1XTMA1
Hersteller: Infineon Technologies
Description: SEN HALL EFFT OPEN DRAIN 5-WLCSP
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: 5-UFBGA, WLCSP
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Programmable
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 3.5V
Technology: Hall Effect
Sensing Range: ±160mT
Current - Supply (Max): 5mA
Supplier Device Package: 5-WLCSP (1.13x0.93)
Test Condition: -40°C ~ 125°C
Produkt ist nicht verfügbar
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CY7C107D-10VXI Infineon-CY7C107D_CY7C1007D_1-Mbit_(1M_x_1)_Static_RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebf2ac23343&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C107D-10VXI
Hersteller: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 28SOJ
Packaging: Tube
Package / Case: 28-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-SOJ
Part Status: Active
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 1
DigiKey Programmable: Not Verified
auf Bestellung 10879 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+18.16 EUR
10+15.5 EUR
25+14.58 EUR
52+13.89 EUR
104+13.29 EUR
260+12.54 EUR
520+12.03 EUR
1040+11.55 EUR
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CY15B004Q-SXET CY15B004Q_RevC_6-4-19.pdf
CY15B004Q-SXET
Hersteller: Infineon Technologies
Description: IC FRAM 4KBIT SPI 16MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 16 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Grade: Automotive
Memory Interface: SPI
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BAS70-05E6433 INFNS11040-1.pdf?t.download=true&u=5oefqw
BAS70-05E6433
Hersteller: Infineon Technologies
Description: DIODE ARR SCHOTT 70V 70MA SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Produkt ist nicht verfügbar
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BAS70-05E6327 INFNS11040-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: BAS70 - HIGH SPEED SWITCHING, CL
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT23-3-11
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Produkt ist nicht verfügbar
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IPI70N10SL16AKSA1 Infineon-IPP_B_I70N10SL_16-DS-v01_01-en.pdf?folderId=db3a304412b407950112b42a6a0a4339&fileId=db3a304412b407950112b42a72ce4342&ack=t
IPI70N10SL16AKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 70A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 50A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 2V @ 2mA
Supplier Device Package: PG-TO262-3
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4540 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
192+2.42 EUR
Mindestbestellmenge: 192
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C167CSL16M3VCAFXQLA1 C167CS-L16M3V_Oct2001.pdf
C167CSL16M3VCAFXQLA1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT ROMLESS 144MQFP
Packaging: Bulk
Package / Case: 144-BQFP
Mounting Type: Surface Mount
Speed: 16MHz
RAM Size: 11K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 24x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-144-8
Part Status: Discontinued at Digi-Key
Number of I/O: 111
DigiKey Programmable: Not Verified
auf Bestellung 8156 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+102.94 EUR
Mindestbestellmenge: 5
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SAF-C167CS-L16M3V INFNS22050-1.pdf?t.download=true&u=5oefqw
SAF-C167CS-L16M3V
Hersteller: Infineon Technologies
Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 144-BQFP
Mounting Type: Surface Mount
Speed: 16MHz
RAM Size: 11K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 24x10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-144-6
Part Status: Active
Number of I/O: 111
DigiKey Programmable: Not Verified
auf Bestellung 46 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+36.4 EUR
Mindestbestellmenge: 14
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SAF-C167CS-L16M3VC INFNS22050-1.pdf?t.download=true&u=5oefqw
SAF-C167CS-L16M3VC
Hersteller: Infineon Technologies
Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 144-BQFP
Mounting Type: Surface Mount
Speed: 16MHz
RAM Size: 11K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 24x10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-144-6
Part Status: Active
Number of I/O: 111
Produkt ist nicht verfügbar
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F167CSL16M3VCAZXP
Hersteller: Infineon Technologies
Description: 16-BIT MICROCONTROLLER
Packaging: Bulk
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BFP540H6327XTSA1 Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920
BFP540H6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 5V 30GHZ PG-SOT-343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 16dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V
Frequency - Transition: 30GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Obsolete
Produkt ist nicht verfügbar
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S25FL256SAGMFB010 infineon-s25fl128s-s25fl256s-128-mb-16-mb-256-mb-32-mb-fl-s-flash-spi-multi-io-3-v-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL256SAGMFB010
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Grade: Automotive
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
auf Bestellung 684 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+8.99 EUR
10+8.36 EUR
25+8.11 EUR
50+7.92 EUR
240+7.5 EUR
480+7.31 EUR
Mindestbestellmenge: 2
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S25FL064LABMFB010 Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FL064LABMFB010
Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 8SOIC
Packaging: Tray
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Grade: Automotive
Part Status: Active
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
auf Bestellung 1640 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.38 EUR
10+2.21 EUR
25+2.15 EUR
50+2.1 EUR
100+2.05 EUR
280+1.98 EUR
560+1.94 EUR
1120+1.89 EUR
Mindestbestellmenge: 8
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S25FL064LABMFB000 Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FL064LABMFB000
Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 16SOIC
Produkt ist nicht verfügbar
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S25FL128LDPMFB003 Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
S25FL128LDPMFB003
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Active
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 16M x 8
Produkt ist nicht verfügbar
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S25FL128LDPMFB000 Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
S25FL128LDPMFB000
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 16SOIC
Produkt ist nicht verfügbar
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S25FL128SDPMFB013 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL128SDPMFB013
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
Produkt ist nicht verfügbar
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S25FS256SAGMFB003 Infineon-S25FS128S_S25FS256S_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_MirrorBit(R)_Non-Volatile_Flash-DataSheet-v14_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ed6b5ab5758&utm_source=cypress&utm_medium=referral&utm_campaign
S25FS256SAGMFB003
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Active
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
Produkt ist nicht verfügbar
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BSS214NWH6327 INFNS16757-1.pdf?t.download=true&u=5oefqw
BSS214NWH6327
Hersteller: Infineon Technologies
Description: BSS214 - 250V-600V SMALL SIGNAL
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 3.7µA
Supplier Device Package: PG-SOT323-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 143 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSS214NW L6327 BSS214NW_Rev2.1.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30431b3e89eb011b695aebc01bde
BSS214NW L6327
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 1.5A SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 3.7µA
Supplier Device Package: PG-SOT323
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 143 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPN60R2K1CEATMA1 Infineon-IPN60R2K1CE-DS-v02_00-EN.pdf?fileId=5546d46253f6505701547af64ab85b44
IPN60R2K1CEATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 3.7A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 800mA, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: PG-SOT223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
auf Bestellung 81526 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.11 EUR
26+0.68 EUR
100+0.44 EUR
500+0.34 EUR
1000+0.3 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
IPN60R1K5CEATMA1 Infineon-IPN60R1K5CE-DS-v02_00-EN.pdf?fileId=5546d46253f6505701547af653155b49
IPN60R1K5CEATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-SOT223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.27 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
IPN60R1K5CEATMA1 Infineon-IPN60R1K5CE-DS-v02_00-EN.pdf?fileId=5546d46253f6505701547af653155b49
IPN60R1K5CEATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-SOT223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V
auf Bestellung 5005 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.16 EUR
25+0.72 EUR
100+0.46 EUR
500+0.35 EUR
1000+0.32 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
IPN60R1K0CEATMA1 Infineon-IPN60R1K0CE-DS-v02_00-EN.pdf?fileId=5546d46253f6505701547aed24095b21
IPN60R1K0CEATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 6.8A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: PG-SOT223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
auf Bestellung 13740 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.37 EUR
21+0.86 EUR
100+0.56 EUR
500+0.43 EUR
1000+0.39 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
IPN60R2K1CE INFN-S-A0002456420-1.pdf?t.download=true&u=5oefqw
IPN60R2K1CE
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 800mA, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: PG-SOT223-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPN60R1K5PFD7SATMA1 Infineon-IPN60R1K5PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e22796eb16753
IPN60R1K5PFD7SATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 3.6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 700mA, 10V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 40µA
Supplier Device Package: PG-SOT223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 169 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPN60R1K5PFD7SATMA1 Infineon-IPN60R1K5PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e22796eb16753
IPN60R1K5PFD7SATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 3.6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 700mA, 10V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 40µA
Supplier Device Package: PG-SOT223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 169 pF @ 400 V
auf Bestellung 1465 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.34 EUR
20+0.89 EUR
100+0.6 EUR
500+0.46 EUR
1000+0.42 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
BSZ12DN20NS3G INFNS16246-1.pdf?t.download=true&u=5oefqw
BSZ12DN20NS3G
Hersteller: Infineon Technologies
Description: BSZ12DN20 - 12V-300V N-CHANNEL P
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 5.7A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPN70R750P7SATMA1 Infineon-IPN70R750P7S-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f526738e46b7a
IPN70R750P7SATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V 6.5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 1.4A, 10V
Power Dissipation (Max): 6.7W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 306 pF @ 400 V
auf Bestellung 8085 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.76 EUR
16+1.11 EUR
100+0.73 EUR
500+0.56 EUR
1000+0.51 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IPN70R750P7S Infineon-TLE4264-2G-DS-v02_60-EN.pdf?fileId=5546d46258fc0bc101595f6960991f2d
Hersteller: Infineon Technologies
Description: IPN70R750 - 650V AND 700V COOLMO
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPN70R1K5CEATMA1 Infineon-IPN70R1K5CE-DS-v02_00-EN.pdf?fileId=5546d46253f6505701547aff80a65b6f
IPN70R1K5CEATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V 5.4A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-SOT223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.72 EUR
17+1.07 EUR
100+0.7 EUR
500+0.54 EUR
1000+0.49 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IPN70R1K5CE Infineon-IPN70R1K5CE-DS-v02_00-EN.pdf?fileId=5546d46253f6505701547aff80a65b6f
Hersteller: Infineon Technologies
Description: SMALL SIGNAL FIELD-EFFECT TRANSI
Packaging: Bulk
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPN70R1K0CEATMA1 Infineon-IPN70R1K0CE-DS-v02_00-EN.pdf?fileId=5546d462580663ef015825731b81712d
IPN70R1K0CEATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V 7.4A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-SOT223
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V
Produkt ist nicht verfügbar
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TLE5012BE5000FUMA1 Infineon-TLE5012B_Exxxx-DS-v02_00-en.pdf?fileId=db3a304334fac4c601350f31c43c433f
TLE5012BE5000FUMA1
Hersteller: Infineon Technologies
Description: SENSOR ANGLE 360DEG SMD
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: SENT, SPI
Operating Temperature: -40°C ~ 150°C
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-DSO-8
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Part Status: Last Time Buy
auf Bestellung 76093 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
104+4.36 EUR
Mindestbestellmenge: 104
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TLE5012FUMA1 TLE5012.pdf
Hersteller: Infineon Technologies
Description: POSITION&CURRENT SENSORS
Packaging: Bulk
Part Status: Not For New Designs
auf Bestellung 22500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
60+7.55 EUR
Mindestbestellmenge: 60
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TLE5014P16DXUMA1 Infineon-TLE5014C_P_S_16D-DataSheet-v01_00-EN.pdf?fileId=5546d46276fb756a01771a9fd67f3a19
TLE5014P16DXUMA1
Hersteller: Infineon Technologies
Description: SENSOR ANGLE 360DEG GULL WING
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: PWM
Operating Temperature: -40°C ~ 125°C
Termination Style: Gull Wing
Voltage - Supply: 4.2V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle, Linear, Rotary
Supplier Device Package: PG-TDSO-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Cosine, Sine
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE5014P16DXUMA1 Infineon-TLE5014C_P_S_16D-DataSheet-v01_00-EN.pdf?fileId=5546d46276fb756a01771a9fd67f3a19
TLE5014P16DXUMA1
Hersteller: Infineon Technologies
Description: SENSOR ANGLE 360DEG GULL WING
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: PWM
Operating Temperature: -40°C ~ 125°C
Termination Style: Gull Wing
Voltage - Supply: 4.2V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle, Linear, Rotary
Supplier Device Package: PG-TDSO-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Cosine, Sine
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 1523 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.88 EUR
5+10.73 EUR
10+10.3 EUR
25+9.79 EUR
50+9.44 EUR
100+9.11 EUR
500+8.86 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1512V18-250BZXC CY7C1510%2C12%2C14%2C25V18.pdf
CY7C1512V18-250BZXC
Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
auf Bestellung 1089 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+275.99 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
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