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IPDD60R150G7XTMA1 IPDD60R150G7XTMA1 Infineon Technologies Infineon-IPDD60R150G7-DS-v02_00-EN.pdf?fileId=5546d4626102d35a016170806aa57863 Description: MOSFET N-CH 600V 16A HDSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5.3A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 4V @ 260µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 902 pF @ 400 V
auf Bestellung 1680 Stücke:
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IPDD60R150G7XTMA1 IPDD60R150G7XTMA1 Infineon Technologies Infineon-IPDD60R150G7-DS-v02_00-EN.pdf?fileId=5546d4626102d35a016170806aa57863 Description: MOSFET N-CH 600V 16A HDSOP-10
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5.3A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 4V @ 260µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 902 pF @ 400 V
auf Bestellung 1680 Stücke:
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3+6.69 EUR
10+4.4 EUR
100+3.1 EUR
500+2.54 EUR
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PTFA181001EV4XWSA1 PTFA181001EV4XWSA1 Infineon Technologies PTFA181001%28E%2CF%29.pdf Description: RF MOSFET LDMOS 28V H-36248-2
Packaging: Tray
Package / Case: 2-Flatpack, Fin Leads
Current Rating (Amps): 1µA
Mounting Type: Surface Mount
Frequency: 1.88GHz
Power - Output: 100W
Gain: 16.5dB
Technology: LDMOS
Supplier Device Package: H-36248-2
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 750 mA
Produkt ist nicht verfügbar
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PTFA181001EV4R250XTMA1 PTFA181001EV4R250XTMA1 Infineon Technologies PTFA181001%28E%2CF%29.pdf Description: RF MOSFET LDMOS 28V H-36248-2
Packaging: Tape & Reel (TR)
Package / Case: 2-Flatpack, Fin Leads
Current Rating (Amps): 1µA
Mounting Type: Surface Mount
Frequency: 1.88GHz
Power - Output: 100W
Gain: 16.5dB
Technology: LDMOS
Supplier Device Package: H-36248-2
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 750 mA
Produkt ist nicht verfügbar
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IRFR1010ZTRPBF IRFR1010ZTRPBF Infineon Technologies irfr1010zpbf.pdf?fileId=5546d462533600a40153562d001f203f Description: MOSFET N-CH 55V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 42A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
auf Bestellung 6000 Stücke:
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2000+0.94 EUR
4000+0.9 EUR
Mindestbestellmenge: 2000
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IRFR1010ZTRPBF IRFR1010ZTRPBF Infineon Technologies irfr1010zpbf.pdf?fileId=5546d462533600a40153562d001f203f Description: MOSFET N-CH 55V 42A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 42A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
auf Bestellung 8046 Stücke:
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7+2.85 EUR
10+1.94 EUR
100+1.42 EUR
500+1.14 EUR
1000+1.1 EUR
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TC1337A136F150EBAAKXUMA2 Infineon Technologies Description: 32-BIT RISC FLASH MCU
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
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SAK-TC1367A-264F150EBAA Infineon Technologies Description: 32-BIT RISC FLASH MCU
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 322 Stücke:
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30+16.41 EUR
Mindestbestellmenge: 30
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TLF50281ELXUMA2 TLF50281ELXUMA2 Infineon Technologies Description: TLF50281 - SWITCHING REGULATOR,
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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TLF50281EL TLF50281EL Infineon Technologies INFN-S-A0004583611-1.pdf?t.download=true&u=5oefqw Description: TLF50281 - OPTIREG SWITCHERS (AU
Packaging: Bulk
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2.2MHz
Voltage - Input (Max): 45V
Topology: Buck
Supplier Device Package: PG-SSOP-14-1
Synchronous Rectifier: No
Voltage - Input (Min): 4.75V
Voltage - Output (Min/Fixed): 5V
Part Status: Active
Produkt ist nicht verfügbar
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IGB30N60T IGB30N60T Infineon Technologies INFN-S-A0001299339-1.pdf?t.download=true&u=5oefqw Description: IGB30N60 - DISCRETE IGBT WITHOUT
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/254ns
Switching Energy: 690µJ (on), 770µJ (off)
Test Condition: 400V, 30A, 10.6Ohm, 15V
Gate Charge: 167 nC
Part Status: Active
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 187 W
Produkt ist nicht verfügbar
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IGP30N60H3 IGP30N60H3 Infineon Technologies INFNS30178-1.pdf?t.download=true&u=5oefqw Description: IGP30N60 - DISCRETE IGBT WITHOUT
Produkt ist nicht verfügbar
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SGW30N60FKSA1 SGW30N60FKSA1 Infineon Technologies SGx30N60.pdf Description: IGBT NPT 600V 41A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: PG-TO247-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 44ns/291ns
Switching Energy: 1.29mJ
Test Condition: 400V, 30A, 11Ohm, 15V
Gate Charge: 140 nC
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 41 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 112 A
Power - Max: 250 W
auf Bestellung 357 Stücke:
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67+6.74 EUR
Mindestbestellmenge: 67
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SS07N70AKMA1 Infineon Technologies Description: MOSFET N-CH
Packaging: Bulk
Part Status: Obsolete
auf Bestellung 42000 Stücke:
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433+1.04 EUR
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SS07N70AKMA1046 SS07N70AKMA1046 Infineon Technologies Description: SS07N70 - 650V AND 700V COOLMOS
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 6000 Stücke:
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BTS134DNT BTS134DNT Infineon Technologies Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Features: Auto Restart
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 35mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-3-11
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
Produkt ist nicht verfügbar
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XMC1402Q048X0128AAXUMA1 XMC1402Q048X0128AAXUMA1 Infineon Technologies Infineon-XMC1400-DS-v01_03-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2 Description: IC MCU 32BIT 128KB FLASH 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-73
Part Status: Active
Number of I/O: 34
DigiKey Programmable: Not Verified
auf Bestellung 2500 Stücke:
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2500+2.68 EUR
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XMC1402Q048X0128AAXUMA1 XMC1402Q048X0128AAXUMA1 Infineon Technologies Infineon-XMC1400-DS-v01_03-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2 Description: IC MCU 32BIT 128KB FLASH 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-73
Part Status: Active
Number of I/O: 34
DigiKey Programmable: Not Verified
auf Bestellung 3502 Stücke:
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4+5.05 EUR
10+3.78 EUR
25+3.46 EUR
100+3.12 EUR
250+2.95 EUR
500+2.85 EUR
1000+2.77 EUR
Mindestbestellmenge: 4
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EVAL2K5WCCM4PV3TOBO1 EVAL2K5WCCM4PV3TOBO1 Infineon Technologies EVAL_2.5KW_CCM_4PIN_EB.pdf Description: EVAL BOARD PFC CCM 2500W
auf Bestellung 9 Stücke:
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1+1078.72 EUR
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IAUC28N08S5L230ATMA1 IAUC28N08S5L230ATMA1 Infineon Technologies Infineon-IAUC28N08S5L230-DataSheet-v01_00-EN.pdf?fileId=5546d4626f1cf1c5016f1dd9c8340050 Description: MOSFET N-CH 80V 28A 8TDSON-33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 14A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 2V @ 11µA
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 40 V
Qualification: AEC-Q101
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IAUC28N08S5L230ATMA1 IAUC28N08S5L230ATMA1 Infineon Technologies Infineon-IAUC28N08S5L230-DataSheet-v01_00-EN.pdf?fileId=5546d4626f1cf1c5016f1dd9c8340050 Description: MOSFET N-CH 80V 28A 8TDSON-33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 14A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 2V @ 11µA
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 4770 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.44 EUR
19+0.97 EUR
100+0.74 EUR
500+0.65 EUR
1000+0.58 EUR
2000+0.55 EUR
Mindestbestellmenge: 13
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IKD15N60RF IKD15N60RF Infineon Technologies INFN-S-A0004163154-1.pdf?t.download=true&u=5oefqw Description: IKD15N60 - DISCRETE IGBT WITH AN
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: PG-TO252-3-313
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/160ns
Switching Energy: 270µJ (on), 250µJ (off)
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 250 W
Produkt ist nicht verfügbar
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IKB15N60T Infineon Technologies INFN-S-A0001300113-1.pdf?t.download=true&u=5oefqw Description: IKB15N60 - DISCRETE IGBT WITH AN
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/188ns
Switching Energy: 220µJ (on), 350µj (off)
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 26 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 130 W
Produkt ist nicht verfügbar
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IRFR9120NTRLPBF IRFR9120NTRLPBF Infineon Technologies irfr9120npbf.pdf?fileId=5546d462533600a40153563607932138 Description: MOSFET P-CH 100V 6.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 3.9A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
auf Bestellung 3000 Stücke:
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3000+0.68 EUR
Mindestbestellmenge: 3000
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IRFR9120NTRLPBF IRFR9120NTRLPBF Infineon Technologies irfr9120npbf.pdf?fileId=5546d462533600a40153563607932138 Description: MOSFET P-CH 100V 6.6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 3.9A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
auf Bestellung 4247 Stücke:
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17+1.04 EUR
18+1.03 EUR
100+0.91 EUR
500+0.84 EUR
1000+0.77 EUR
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SLS32AIA020X4USON10XTMA4 SLS32AIA020X4USON10XTMA4 Infineon Technologies Infineon-OPTIGA%20TRUST%20X%20SLS%2032AIA-DS-v02_60-EN.pdf?fileId=5546d462602a9dc801606f1c2ebb7fe9 Description: OPTIGA TRUST
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -25°C ~ 85°C (TA)
Voltage - Supply: 1.62V ~ 5.5V
Program Memory Type: NVM (10kB)
Applications: Embedded Security Trusted Computing
Core Processor: 16-Bit
Supplier Device Package: PG-USON-10-2
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IGP20N60H3 IGP20N60H3 Infineon Technologies INFNS30175-1.pdf?t.download=true&u=5oefqw Description: IGP20N60 - DISCRETE IGBT WITHOUT
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Supplier Device Package: PG-TO220-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/194ns
Switching Energy: 450µJ (on), 240µJ (off)
Test Condition: 400V, 20A, 14.6Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 170 W
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AUIPS7145RTRL AUIPS7145RTRL Infineon Technologies auips7145r.pdf?fileId=5546d462533600a4015355a7ff1a1334 Description: IC PWR SWITCH N-CHANNEL 1:1 DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 75mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.1A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-5
Fault Protection: Current Limiting (Fixed), Over Temperature
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q100
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ESD106B1W0201E6327XTSA1 ESD106B1W0201E6327XTSA1 Infineon Technologies Infineon-ESD106-B1-W0201-DataSheet-v02_00-EN.pdf?fileId=5546d4626cb27db2016cb48375972ca5 Description: TVS DIODE 5.5VWM 10VC PGWLL23
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: RF Antenna
Capacitance @ Frequency: 0.13pF @ 2.5GHz
Current - Peak Pulse (10/1000µs): 1.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-WLL-2-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.1V
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power - Peak Pulse: 15W
Power Line Protection: No
Part Status: Active
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IFX1051LEXUMA1 IFX1051LEXUMA1 Infineon Technologies Infineon-IFX1051LE-DS-v00_92-EN.pdf?fileId=5546d4624e765da5014ed9d468de3a16 Description: IC TRANSCEIVER 1/1 TSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 2Mbps
Protocol: CANbus
Supplier Device Package: PG-TSON-8-1
Receiver Hysteresis: 200 mV
Part Status: Obsolete
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IFX1051SJXUMA1 Infineon Technologies Infineon-IFX1051LE-DS-v01_00-EN.pdf?fileId=5546d4624e765da5014ed9d468de3a16 Description: IC TRANSCEIVER IND 8SOIC
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SP000850810 SP000850810 Infineon Technologies INFN-S-A0002263215-1.pdf?t.download=true&u=5oefqw Description: IPP50R280CEXKSA1 - 500V COOLMOS
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BTS50050-1TEB BTS50050-1TEB Infineon Technologies Description: AUTOMOTIVE HIGH SIDE SWITCH
Packaging: Bulk
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BTS50060-1EGA Infineon Technologies INFN-S-A0002952977-1.pdf?t.download=true&u=5oefqw Description: BUFFER/INVERTER BASED PERIPHERAL
Features: Auto Restart
Packaging: Bulk
Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 6mOhm
Input Type: Non-Inverting
Voltage - Load: 9V ~ 16V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 15A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-12-16
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
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BTS50070-1TMA BTS50070-1TMA Infineon Technologies INFNS15722-1.pdf?t.download=true&u=5oefqw Description: AUTOMOTIVE HIGH SIDE SWITCH
Features: Slew Rate Controlled
Packaging: Bulk
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 7mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 30V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-7-4
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Short Circuit
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BTS50080-1TMB BTS50080-1TMB Infineon Technologies INFNS16548-1.pdf?t.download=true&u=5oefqw Description: BTS50080 - PROFET - SMART HIGH S
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BTS50080-1TMC BTS50080-1TMC Infineon Technologies INFNS15726-1.pdf?t.download=true&u=5oefqw Description: BTS50080 - PROFET - SMART HIGH S
Features: Slew Rate Controlled
Packaging: Bulk
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 7mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 38V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 9.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-7-4
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Short Circuit, UVLO
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BTS50045-1TAC BTS50045-1TAC Infineon Technologies INFNS29821-1.pdf?t.download=true&u=5oefqw Description: AUTOMOTIVE SMART HIGH SIDE SWITC
Features: Load Discharge, Slew Rate Controlled
Packaging: Bulk
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 4.5mOhm
Input Type: Non-Inverting
Voltage - Load: 3.2V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 23A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO-263-7-8
Fault Protection: Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
Part Status: Active
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BTS500251TADATMA2 BTS500251TADATMA2 Infineon Technologies BTS50025-1TAD_Rev1.2_12-5-17.pdf Description: IC PWR SWITCH N-CHAN 1:1 TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 3.9mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 25A
Ratio - Input:Output: 1:1
Supplier Device Package: P/PG-TO-263-7-10
Fault Protection: Over Temperature, Over Voltage, Reverse Battery, Short Circuit
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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BTS500551TMB BTS500551TMB Infineon Technologies INFNS15719-1.pdf?t.download=true&u=5oefqw Description: AUTOMOTIVE HIGH SIDE SWITCH
Features: Auto Restart
Packaging: Bulk
Package / Case: TO-220-7 Formed Leads
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 4.4mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 55A
Ratio - Input:Output: 1:1
Supplier Device Package: P-TO220-7-11
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Load, Over Temperature, Over Voltage, Short Circuit, UVLO
Part Status: Active
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BTS50025-1TAC BTS50025-1TAC Infineon Technologies INFN-S-A0003268411-1.pdf?t.download=true&u=5oefqw Description: AUTOMOTIVE HIGH SIDE SWITCH
Packaging: Bulk
Part Status: Active
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IPP65R041CFD7XKSA1 IPP65R041CFD7XKSA1 Infineon Technologies Infineon-IPP65R041CFD7-DataSheet-v02_01-EN.pdf?fileId=5546d46272e49d2a01730951a7f844ee Description: 650V FET COOLMOS TO247
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 24.8A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.24mA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V
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IPP60R600P6XKSA1 IPP60R600P6XKSA1 Infineon Technologies DS_IPx60R600P6_2_1.pdf?fileId=db3a30433f2e70c5013f3862b5622681 Description: MOSFET N-CH 600V 7.3A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 557 pF @ 100 V
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BUZ73HXKSA1 BUZ73HXKSA1 Infineon Technologies BUZ73_H.pdf Description: MOSFET N-CH 200V 7A TO220-3
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IKW30N60T IKW30N60T Infineon Technologies INFN-S-A0001300131-1.pdf?t.download=true&u=5oefqw Description: IKW30N60 - DISCRETE IGBT WITH AN
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 143 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A
Supplier Device Package: PG-TO247-3-21
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/254ns
Switching Energy: 690µJ (on), 770µJ (off)
Test Condition: 400V, 30A, 10.6Ohm, 15V
Gate Charge: 167 nC
Part Status: Active
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 187 W
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MB91F469GBPB-GS-N2-K6 MB91F469GBPB-GS-N2-K6 Infineon Technologies MB91460_Factsheet_8-9-10.pdf Description: IC MCU 32B 2.112MB FLASH 320PBGA
Packaging: Tray
Package / Case: 320-BBGA
Mounting Type: Surface Mount
Speed: 100MHz
Program Memory Size: 2.112MB (2.112M x 8)
RAM Size: 112K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: FR60 RISC
Data Converters: A/D 32x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, WDT
Supplier Device Package: 320-PBGA (27x27)
Number of I/O: 205
DigiKey Programmable: Not Verified
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MB91F469GBPB-GS-N2K6E1 MB91F469GBPB-GS-N2K6E1 Infineon Technologies MB91460_Factsheet_8-9-10.pdf Description: IC MCU 32B 2.112MB FLASH 320PBGA
Packaging: Tray
Package / Case: 320-BBGA
Mounting Type: Surface Mount
Speed: 100MHz
Program Memory Size: 2.112MB (2.112M x 8)
RAM Size: 112K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: FR60 RISC
Data Converters: A/D 32x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, WDT
Supplier Device Package: 320-PBGA (27x27)
Number of I/O: 205
DigiKey Programmable: Not Verified
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MB91F469GAPB-GS-K6 MB91F469GAPB-GS-K6 Infineon Technologies Infineon-CY91F469GA_CY91F469GB_FR60_CY91460G_Series_32_bit_Microcontroller_Datasheet-AdditionalTechnicalInformation-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edd1e21615b&utm_source=cypress&utm_medium=referral&utm_campaign=202 Description: IC MCU 32B 2.112MB FLASH 320PBGA
Packaging: Tray
Package / Case: 320-BBGA
Mounting Type: Surface Mount
Speed: 100MHz
Program Memory Size: 2.112MB (2.112M x 8)
RAM Size: 112K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: FR60 RISC
Data Converters: A/D 32x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, WDT
Supplier Device Package: 320-PBGA (27x27)
Number of I/O: 205
DigiKey Programmable: Not Verified
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MB91F469QAPB-GSK6E1 MB91F469QAPB-GSK6E1 Infineon Technologies Infineon-CY91460Q_Series_FR60_32_bit_Microcontroller_Datasheet-AdditionalTechnicalInformation-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edcbc3460bd Description: IC MCU 32B 2.0625MB FLSH 320PBGA
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IKW50N60T IKW50N60T Infineon Technologies INFNS30103-1.pdf?t.download=true&u=5oefqw Description: IKW50N60 - DISCRETE IGBT WITH AN
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 143 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
Supplier Device Package: PG-TO247-3-21
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/299ns
Switching Energy: 1.2mJ (on), 1.4mJ (off)
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 310 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 333 W
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IKW50N60TA IKW50N60TA Infineon Technologies INFN-S-A0000110252-1.pdf?t.download=true&u=5oefqw Description: IKW50N60 - AUTOMOTIVE IGBT DISCR
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 143 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/299ns
Switching Energy: 1.2mJ (on), 1.4mJ (off)
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 310 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 333 W
Produkt ist nicht verfügbar
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IPP50R199CP IPP50R199CP Infineon Technologies INFNS17019-1.pdf?t.download=true&u=5oefqw Description: IPP50R199 - 500V COOLMOS N-CHANN
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BAT64-04E6433 BAT64-04E6433 Infineon Technologies INFNS11551-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOTT 40V 120MA SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 120mA
Supplier Device Package: PG-SOT23-3-11
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
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BAT64-06E6327 Infineon Technologies INFNS11551-1.pdf?t.download=true&u=5oefqw Description: BAT64 - HIGH SPEED SWITCHING, CL
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Supplier Device Package: PG-SOT23
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BF799WH6327XTSA1 BF799WH6327XTSA1 Infineon Technologies BF799W.pdf Description: RF TRANS NPN 20V 800MHZ SOT323-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 280mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 20V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Frequency - Transition: 800MHz
Noise Figure (dB Typ @ f): 3dB @ 100MHz
Supplier Device Package: PG-SOT323
Part Status: Obsolete
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4157+0.11 EUR
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BF799WE6327 BF799WE6327 Infineon Technologies INFNS10753-1.pdf?t.download=true&u=5oefqw Description: RF TRANSISTOR, NPN
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 280mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 20V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Frequency - Transition: 800MHz
Noise Figure (dB Typ @ f): 3dB @ 100MHz
Supplier Device Package: SOT-323
Part Status: Active
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BF799 Infineon Technologies INFNS17221-1.pdf?t.download=true&u=5oefqw Description: RF TRANSISTOR, NPN
Packaging: Bulk
Part Status: Active
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IPD075N03LG IPD075N03LG Infineon Technologies INFNS15826-1.pdf?t.download=true&u=5oefqw Description: OPTLMOS N-CHANNEL POWER MOSFET
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6ED003L06F2XUMA2 6ED003L06F2XUMA2 Infineon Technologies Infineon-6ED003L0x_F2-DS-v02_08-EN.pdf?fileId=db3a3043315daf4401316108306d4190 Description: 6ED003L06 - GATE DRIVER
Packaging: Bulk
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 13V ~ 17.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 620 V
Supplier Device Package: P-DSO-28
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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FD1200R17HP4-K_B2 Infineon Technologies INFN-S-A0001441443-1.pdf?t.download=true&u=5oefqw Description: FD1200R17 - IGBT MODULE
auf Bestellung 40 Stücke:
Lieferzeit 10-14 Tag (e)
1+2081.27 EUR
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IPDD60R150G7XTMA1 Infineon-IPDD60R150G7-DS-v02_00-EN.pdf?fileId=5546d4626102d35a016170806aa57863
IPDD60R150G7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 16A HDSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5.3A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 4V @ 260µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 902 pF @ 400 V
auf Bestellung 1680 Stücke:
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IPDD60R150G7XTMA1 Infineon-IPDD60R150G7-DS-v02_00-EN.pdf?fileId=5546d4626102d35a016170806aa57863
IPDD60R150G7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 16A HDSOP-10
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5.3A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 4V @ 260µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 902 pF @ 400 V
auf Bestellung 1680 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.69 EUR
10+4.4 EUR
100+3.1 EUR
500+2.54 EUR
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PTFA181001EV4XWSA1 PTFA181001%28E%2CF%29.pdf
PTFA181001EV4XWSA1
Hersteller: Infineon Technologies
Description: RF MOSFET LDMOS 28V H-36248-2
Packaging: Tray
Package / Case: 2-Flatpack, Fin Leads
Current Rating (Amps): 1µA
Mounting Type: Surface Mount
Frequency: 1.88GHz
Power - Output: 100W
Gain: 16.5dB
Technology: LDMOS
Supplier Device Package: H-36248-2
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 750 mA
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PTFA181001EV4R250XTMA1 PTFA181001%28E%2CF%29.pdf
PTFA181001EV4R250XTMA1
Hersteller: Infineon Technologies
Description: RF MOSFET LDMOS 28V H-36248-2
Packaging: Tape & Reel (TR)
Package / Case: 2-Flatpack, Fin Leads
Current Rating (Amps): 1µA
Mounting Type: Surface Mount
Frequency: 1.88GHz
Power - Output: 100W
Gain: 16.5dB
Technology: LDMOS
Supplier Device Package: H-36248-2
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 750 mA
Produkt ist nicht verfügbar
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IRFR1010ZTRPBF irfr1010zpbf.pdf?fileId=5546d462533600a40153562d001f203f
IRFR1010ZTRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 42A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.94 EUR
4000+0.9 EUR
Mindestbestellmenge: 2000
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IRFR1010ZTRPBF irfr1010zpbf.pdf?fileId=5546d462533600a40153562d001f203f
IRFR1010ZTRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 42A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
auf Bestellung 8046 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.85 EUR
10+1.94 EUR
100+1.42 EUR
500+1.14 EUR
1000+1.1 EUR
Mindestbestellmenge: 7
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TC1337A136F150EBAAKXUMA2
Hersteller: Infineon Technologies
Description: 32-BIT RISC FLASH MCU
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 2533 Stücke:
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Anzahl Preis
52+9.68 EUR
Mindestbestellmenge: 52
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SAK-TC1367A-264F150EBAA
Hersteller: Infineon Technologies
Description: 32-BIT RISC FLASH MCU
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 322 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
30+16.41 EUR
Mindestbestellmenge: 30
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TLF50281ELXUMA2
TLF50281ELXUMA2
Hersteller: Infineon Technologies
Description: TLF50281 - SWITCHING REGULATOR,
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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TLF50281EL INFN-S-A0004583611-1.pdf?t.download=true&u=5oefqw
TLF50281EL
Hersteller: Infineon Technologies
Description: TLF50281 - OPTIREG SWITCHERS (AU
Packaging: Bulk
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2.2MHz
Voltage - Input (Max): 45V
Topology: Buck
Supplier Device Package: PG-SSOP-14-1
Synchronous Rectifier: No
Voltage - Input (Min): 4.75V
Voltage - Output (Min/Fixed): 5V
Part Status: Active
Produkt ist nicht verfügbar
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IGB30N60T INFN-S-A0001299339-1.pdf?t.download=true&u=5oefqw
IGB30N60T
Hersteller: Infineon Technologies
Description: IGB30N60 - DISCRETE IGBT WITHOUT
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/254ns
Switching Energy: 690µJ (on), 770µJ (off)
Test Condition: 400V, 30A, 10.6Ohm, 15V
Gate Charge: 167 nC
Part Status: Active
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 187 W
Produkt ist nicht verfügbar
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IGP30N60H3 INFNS30178-1.pdf?t.download=true&u=5oefqw
IGP30N60H3
Hersteller: Infineon Technologies
Description: IGP30N60 - DISCRETE IGBT WITHOUT
Produkt ist nicht verfügbar
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SGW30N60FKSA1 SGx30N60.pdf
SGW30N60FKSA1
Hersteller: Infineon Technologies
Description: IGBT NPT 600V 41A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: PG-TO247-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 44ns/291ns
Switching Energy: 1.29mJ
Test Condition: 400V, 30A, 11Ohm, 15V
Gate Charge: 140 nC
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 41 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 112 A
Power - Max: 250 W
auf Bestellung 357 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
67+6.74 EUR
Mindestbestellmenge: 67
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SS07N70AKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH
Packaging: Bulk
Part Status: Obsolete
auf Bestellung 42000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
433+1.04 EUR
Mindestbestellmenge: 433
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SS07N70AKMA1046
SS07N70AKMA1046
Hersteller: Infineon Technologies
Description: SS07N70 - 650V AND 700V COOLMOS
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
634+0.78 EUR
Mindestbestellmenge: 634
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BTS134DNT
BTS134DNT
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Features: Auto Restart
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 35mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-3-11
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
Produkt ist nicht verfügbar
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XMC1402Q048X0128AAXUMA1 Infineon-XMC1400-DS-v01_03-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2
XMC1402Q048X0128AAXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-73
Part Status: Active
Number of I/O: 34
DigiKey Programmable: Not Verified
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+2.68 EUR
Mindestbestellmenge: 2500
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XMC1402Q048X0128AAXUMA1 Infineon-XMC1400-DS-v01_03-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2
XMC1402Q048X0128AAXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-73
Part Status: Active
Number of I/O: 34
DigiKey Programmable: Not Verified
auf Bestellung 3502 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.05 EUR
10+3.78 EUR
25+3.46 EUR
100+3.12 EUR
250+2.95 EUR
500+2.85 EUR
1000+2.77 EUR
Mindestbestellmenge: 4
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EVAL2K5WCCM4PV3TOBO1 EVAL_2.5KW_CCM_4PIN_EB.pdf
EVAL2K5WCCM4PV3TOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD PFC CCM 2500W
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+1078.72 EUR
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IAUC28N08S5L230ATMA1 Infineon-IAUC28N08S5L230-DataSheet-v01_00-EN.pdf?fileId=5546d4626f1cf1c5016f1dd9c8340050
IAUC28N08S5L230ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 28A 8TDSON-33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 14A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 2V @ 11µA
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUC28N08S5L230ATMA1 Infineon-IAUC28N08S5L230-DataSheet-v01_00-EN.pdf?fileId=5546d4626f1cf1c5016f1dd9c8340050
IAUC28N08S5L230ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 28A 8TDSON-33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 14A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 2V @ 11µA
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 4770 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.44 EUR
19+0.97 EUR
100+0.74 EUR
500+0.65 EUR
1000+0.58 EUR
2000+0.55 EUR
Mindestbestellmenge: 13
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IKD15N60RF INFN-S-A0004163154-1.pdf?t.download=true&u=5oefqw
IKD15N60RF
Hersteller: Infineon Technologies
Description: IKD15N60 - DISCRETE IGBT WITH AN
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: PG-TO252-3-313
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/160ns
Switching Energy: 270µJ (on), 250µJ (off)
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 250 W
Produkt ist nicht verfügbar
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IKB15N60T INFN-S-A0001300113-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IKB15N60 - DISCRETE IGBT WITH AN
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/188ns
Switching Energy: 220µJ (on), 350µj (off)
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 26 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 130 W
Produkt ist nicht verfügbar
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IRFR9120NTRLPBF irfr9120npbf.pdf?fileId=5546d462533600a40153563607932138
IRFR9120NTRLPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 100V 6.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 3.9A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.68 EUR
Mindestbestellmenge: 3000
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IRFR9120NTRLPBF irfr9120npbf.pdf?fileId=5546d462533600a40153563607932138
IRFR9120NTRLPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 100V 6.6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 3.9A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
auf Bestellung 4247 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.04 EUR
18+1.03 EUR
100+0.91 EUR
500+0.84 EUR
1000+0.77 EUR
Mindestbestellmenge: 17
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SLS32AIA020X4USON10XTMA4 Infineon-OPTIGA%20TRUST%20X%20SLS%2032AIA-DS-v02_60-EN.pdf?fileId=5546d462602a9dc801606f1c2ebb7fe9
SLS32AIA020X4USON10XTMA4
Hersteller: Infineon Technologies
Description: OPTIGA TRUST
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -25°C ~ 85°C (TA)
Voltage - Supply: 1.62V ~ 5.5V
Program Memory Type: NVM (10kB)
Applications: Embedded Security Trusted Computing
Core Processor: 16-Bit
Supplier Device Package: PG-USON-10-2
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IGP20N60H3 INFNS30175-1.pdf?t.download=true&u=5oefqw
IGP20N60H3
Hersteller: Infineon Technologies
Description: IGP20N60 - DISCRETE IGBT WITHOUT
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Supplier Device Package: PG-TO220-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/194ns
Switching Energy: 450µJ (on), 240µJ (off)
Test Condition: 400V, 20A, 14.6Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 170 W
Produkt ist nicht verfügbar
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AUIPS7145RTRL auips7145r.pdf?fileId=5546d462533600a4015355a7ff1a1334
AUIPS7145RTRL
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHANNEL 1:1 DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 75mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.1A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-5
Fault Protection: Current Limiting (Fixed), Over Temperature
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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ESD106B1W0201E6327XTSA1 Infineon-ESD106-B1-W0201-DataSheet-v02_00-EN.pdf?fileId=5546d4626cb27db2016cb48375972ca5
ESD106B1W0201E6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 5.5VWM 10VC PGWLL23
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: RF Antenna
Capacitance @ Frequency: 0.13pF @ 2.5GHz
Current - Peak Pulse (10/1000µs): 1.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-WLL-2-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.1V
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power - Peak Pulse: 15W
Power Line Protection: No
Part Status: Active
auf Bestellung 68507 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
77+0.23 EUR
124+0.14 EUR
285+0.062 EUR
500+0.059 EUR
1000+0.054 EUR
2000+0.053 EUR
Mindestbestellmenge: 77
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IFX1051LEXUMA1 Infineon-IFX1051LE-DS-v00_92-EN.pdf?fileId=5546d4624e765da5014ed9d468de3a16
IFX1051LEXUMA1
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER 1/1 TSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 2Mbps
Protocol: CANbus
Supplier Device Package: PG-TSON-8-1
Receiver Hysteresis: 200 mV
Part Status: Obsolete
Produkt ist nicht verfügbar
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IFX1051SJXUMA1 Infineon-IFX1051LE-DS-v01_00-EN.pdf?fileId=5546d4624e765da5014ed9d468de3a16
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER IND 8SOIC
Produkt ist nicht verfügbar
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SP000850810 INFN-S-A0002263215-1.pdf?t.download=true&u=5oefqw
SP000850810
Hersteller: Infineon Technologies
Description: IPP50R280CEXKSA1 - 500V COOLMOS
Produkt ist nicht verfügbar
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BTS50050-1TEB
BTS50050-1TEB
Hersteller: Infineon Technologies
Description: AUTOMOTIVE HIGH SIDE SWITCH
Packaging: Bulk
Produkt ist nicht verfügbar
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BTS50060-1EGA INFN-S-A0002952977-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: BUFFER/INVERTER BASED PERIPHERAL
Features: Auto Restart
Packaging: Bulk
Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 6mOhm
Input Type: Non-Inverting
Voltage - Load: 9V ~ 16V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 15A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-12-16
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Produkt ist nicht verfügbar
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BTS50070-1TMA INFNS15722-1.pdf?t.download=true&u=5oefqw
BTS50070-1TMA
Hersteller: Infineon Technologies
Description: AUTOMOTIVE HIGH SIDE SWITCH
Features: Slew Rate Controlled
Packaging: Bulk
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 7mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 30V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-7-4
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Short Circuit
Produkt ist nicht verfügbar
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BTS50080-1TMB INFNS16548-1.pdf?t.download=true&u=5oefqw
BTS50080-1TMB
Hersteller: Infineon Technologies
Description: BTS50080 - PROFET - SMART HIGH S
Produkt ist nicht verfügbar
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BTS50080-1TMC INFNS15726-1.pdf?t.download=true&u=5oefqw
BTS50080-1TMC
Hersteller: Infineon Technologies
Description: BTS50080 - PROFET - SMART HIGH S
Features: Slew Rate Controlled
Packaging: Bulk
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 7mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 38V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 9.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-7-4
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Short Circuit, UVLO
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BTS50045-1TAC INFNS29821-1.pdf?t.download=true&u=5oefqw
BTS50045-1TAC
Hersteller: Infineon Technologies
Description: AUTOMOTIVE SMART HIGH SIDE SWITC
Features: Load Discharge, Slew Rate Controlled
Packaging: Bulk
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 4.5mOhm
Input Type: Non-Inverting
Voltage - Load: 3.2V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 23A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO-263-7-8
Fault Protection: Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
Part Status: Active
Produkt ist nicht verfügbar
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BTS500251TADATMA2 BTS50025-1TAD_Rev1.2_12-5-17.pdf
BTS500251TADATMA2
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 3.9mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 25A
Ratio - Input:Output: 1:1
Supplier Device Package: P/PG-TO-263-7-10
Fault Protection: Over Temperature, Over Voltage, Reverse Battery, Short Circuit
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 4804 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.6 EUR
10+5 EUR
25+4.6 EUR
100+4.16 EUR
250+3.95 EUR
500+3.82 EUR
Mindestbestellmenge: 3
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BTS500551TMB INFNS15719-1.pdf?t.download=true&u=5oefqw
BTS500551TMB
Hersteller: Infineon Technologies
Description: AUTOMOTIVE HIGH SIDE SWITCH
Features: Auto Restart
Packaging: Bulk
Package / Case: TO-220-7 Formed Leads
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 4.4mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 55A
Ratio - Input:Output: 1:1
Supplier Device Package: P-TO220-7-11
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Load, Over Temperature, Over Voltage, Short Circuit, UVLO
Part Status: Active
Produkt ist nicht verfügbar
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BTS50025-1TAC INFN-S-A0003268411-1.pdf?t.download=true&u=5oefqw
BTS50025-1TAC
Hersteller: Infineon Technologies
Description: AUTOMOTIVE HIGH SIDE SWITCH
Packaging: Bulk
Part Status: Active
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+10.29 EUR
Mindestbestellmenge: 50
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IPP65R041CFD7XKSA1 Infineon-IPP65R041CFD7-DataSheet-v02_01-EN.pdf?fileId=5546d46272e49d2a01730951a7f844ee
IPP65R041CFD7XKSA1
Hersteller: Infineon Technologies
Description: 650V FET COOLMOS TO247
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 24.8A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.24mA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V
auf Bestellung 489 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+14.68 EUR
50+8.06 EUR
100+7.43 EUR
Mindestbestellmenge: 2
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IPP60R600P6XKSA1 DS_IPx60R600P6_2_1.pdf?fileId=db3a30433f2e70c5013f3862b5622681
IPP60R600P6XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 7.3A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 557 pF @ 100 V
auf Bestellung 102154 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
494+1.03 EUR
Mindestbestellmenge: 494
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BUZ73HXKSA1 BUZ73_H.pdf
BUZ73HXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 7A TO220-3
auf Bestellung 5400 Stücke:
Lieferzeit 10-14 Tag (e)
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IKW30N60T INFN-S-A0001300131-1.pdf?t.download=true&u=5oefqw
IKW30N60T
Hersteller: Infineon Technologies
Description: IKW30N60 - DISCRETE IGBT WITH AN
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 143 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A
Supplier Device Package: PG-TO247-3-21
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/254ns
Switching Energy: 690µJ (on), 770µJ (off)
Test Condition: 400V, 30A, 10.6Ohm, 15V
Gate Charge: 167 nC
Part Status: Active
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 187 W
Produkt ist nicht verfügbar
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MB91F469GBPB-GS-N2-K6 MB91460_Factsheet_8-9-10.pdf
MB91F469GBPB-GS-N2-K6
Hersteller: Infineon Technologies
Description: IC MCU 32B 2.112MB FLASH 320PBGA
Packaging: Tray
Package / Case: 320-BBGA
Mounting Type: Surface Mount
Speed: 100MHz
Program Memory Size: 2.112MB (2.112M x 8)
RAM Size: 112K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: FR60 RISC
Data Converters: A/D 32x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, WDT
Supplier Device Package: 320-PBGA (27x27)
Number of I/O: 205
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB91F469GBPB-GS-N2K6E1 MB91460_Factsheet_8-9-10.pdf
MB91F469GBPB-GS-N2K6E1
Hersteller: Infineon Technologies
Description: IC MCU 32B 2.112MB FLASH 320PBGA
Packaging: Tray
Package / Case: 320-BBGA
Mounting Type: Surface Mount
Speed: 100MHz
Program Memory Size: 2.112MB (2.112M x 8)
RAM Size: 112K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: FR60 RISC
Data Converters: A/D 32x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, WDT
Supplier Device Package: 320-PBGA (27x27)
Number of I/O: 205
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB91F469GAPB-GS-K6 Infineon-CY91F469GA_CY91F469GB_FR60_CY91460G_Series_32_bit_Microcontroller_Datasheet-AdditionalTechnicalInformation-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edd1e21615b&utm_source=cypress&utm_medium=referral&utm_campaign=202
MB91F469GAPB-GS-K6
Hersteller: Infineon Technologies
Description: IC MCU 32B 2.112MB FLASH 320PBGA
Packaging: Tray
Package / Case: 320-BBGA
Mounting Type: Surface Mount
Speed: 100MHz
Program Memory Size: 2.112MB (2.112M x 8)
RAM Size: 112K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: FR60 RISC
Data Converters: A/D 32x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, WDT
Supplier Device Package: 320-PBGA (27x27)
Number of I/O: 205
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB91F469QAPB-GSK6E1 Infineon-CY91460Q_Series_FR60_32_bit_Microcontroller_Datasheet-AdditionalTechnicalInformation-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edcbc3460bd
MB91F469QAPB-GSK6E1
Hersteller: Infineon Technologies
Description: IC MCU 32B 2.0625MB FLSH 320PBGA
Produkt ist nicht verfügbar
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IKW50N60T INFNS30103-1.pdf?t.download=true&u=5oefqw
IKW50N60T
Hersteller: Infineon Technologies
Description: IKW50N60 - DISCRETE IGBT WITH AN
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 143 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
Supplier Device Package: PG-TO247-3-21
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/299ns
Switching Energy: 1.2mJ (on), 1.4mJ (off)
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 310 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 333 W
Produkt ist nicht verfügbar
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IKW50N60TA INFN-S-A0000110252-1.pdf?t.download=true&u=5oefqw
IKW50N60TA
Hersteller: Infineon Technologies
Description: IKW50N60 - AUTOMOTIVE IGBT DISCR
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 143 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/299ns
Switching Energy: 1.2mJ (on), 1.4mJ (off)
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 310 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 333 W
Produkt ist nicht verfügbar
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IPP50R199CP INFNS17019-1.pdf?t.download=true&u=5oefqw
IPP50R199CP
Hersteller: Infineon Technologies
Description: IPP50R199 - 500V COOLMOS N-CHANN
Produkt ist nicht verfügbar
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BAT64-04E6433 INFNS11551-1.pdf?t.download=true&u=5oefqw
BAT64-04E6433
Hersteller: Infineon Technologies
Description: DIODE ARR SCHOTT 40V 120MA SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 120mA
Supplier Device Package: PG-SOT23-3-11
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
Produkt ist nicht verfügbar
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BAT64-06E6327 INFNS11551-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: BAT64 - HIGH SPEED SWITCHING, CL
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Supplier Device Package: PG-SOT23
Produkt ist nicht verfügbar
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BF799WH6327XTSA1 BF799W.pdf
BF799WH6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 20V 800MHZ SOT323-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 280mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 20V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Frequency - Transition: 800MHz
Noise Figure (dB Typ @ f): 3dB @ 100MHz
Supplier Device Package: PG-SOT323
Part Status: Obsolete
auf Bestellung 608000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4157+0.11 EUR
Mindestbestellmenge: 4157
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BF799WE6327 INFNS10753-1.pdf?t.download=true&u=5oefqw
BF799WE6327
Hersteller: Infineon Technologies
Description: RF TRANSISTOR, NPN
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 280mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 20V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Frequency - Transition: 800MHz
Noise Figure (dB Typ @ f): 3dB @ 100MHz
Supplier Device Package: SOT-323
Part Status: Active
Produkt ist nicht verfügbar
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BF799 INFNS17221-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: RF TRANSISTOR, NPN
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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IPD075N03LG INFNS15826-1.pdf?t.download=true&u=5oefqw
IPD075N03LG
Hersteller: Infineon Technologies
Description: OPTLMOS N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
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6ED003L06F2XUMA2 Infineon-6ED003L0x_F2-DS-v02_08-EN.pdf?fileId=db3a3043315daf4401316108306d4190
6ED003L06F2XUMA2
Hersteller: Infineon Technologies
Description: 6ED003L06 - GATE DRIVER
Packaging: Bulk
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 13V ~ 17.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 620 V
Supplier Device Package: P-DSO-28
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
Part Status: Active
DigiKey Programmable: Not Verified
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FD1200R17HP4-K_B2 INFN-S-A0001441443-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: FD1200R17 - IGBT MODULE
auf Bestellung 40 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+2081.27 EUR
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