Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (127299) > Seite 386 nach 2122
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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| TLE49452LE6004HBXA1-INF | Infineon Technologies |
Description: HALL EFFECT SENSORTest Condition: 25°C Supplier Device Package: PG-SSO-3-2 Current - Supply (Max): 8mA Current - Output (Max): 100mA Sensing Range: 6mT Trip, -6mT Release Technology: Hall Effect Voltage - Supply: 3.8V ~ 24V Operating Temperature: -40°C ~ 170°C Function: Bipolar Switch Mounting Type: Through Hole Polarization: North Pole, South Pole Output Type: Open Collector Package / Case: 3-SSIP, SSO-3-02 Features: Temperature Compensated Packaging: Bulk |
Produkt ist nicht verfügbar |
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| ESD102-U2-099ELE6327XTSA1 | Infineon Technologies |
Description: TRANS VOLTAGE SUPPRESSOR DIODEApplications: DVI, Ethernet, HDMI, USB Operating Temperature: -40°C ~ 125°C (TA) Type: Zener Mounting Type: Surface Mount Package / Case: 4-XFDFN Packaging: Bulk Part Status: Active Power Line Protection: No Voltage - Clamping (Max) @ Ipp: 11V (Typ) Unidirectional Channels: 2 Supplier Device Package: TSLP-4-10 Voltage - Reverse Standoff (Typ): 3.3V (Max) Current - Peak Pulse (10/1000µs): 3A (8/20µs) Capacitance @ Frequency: 0.4pF @ 1MHz |
Produkt ist nicht verfügbar |
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KP229L2920 | Infineon Technologies |
Description: SENSOR 37.71PSIA 4.7V DSOF8Part Status: Active Port Style: No Port Supplier Device Package: PG-DSOF-8-16 Applications: Board Mount Voltage - Supply: 4.5V ~ 5.5V Termination Style: SMD (SMT) Tab Operating Temperature: -40°C ~ 140°C (TA) Accuracy: ±1.02PSI (7kPa) Pressure Type: Absolute Operating Pressure: 8.7 ~ 37.71PSI (60 ~ 260kPa) Output: 0.3V ~ 4.7V Mounting Type: Surface Mount Output Type: Analog Voltage Package / Case: 8-SMD Module Features: Amplified Output, Temperature Compensated Packaging: Bulk |
auf Bestellung 21067 Stücke: Lieferzeit 10-14 Tag (e) |
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| PEB22715HV1.0 | Infineon Technologies |
Description: IC LINE DRIVER Part Status: Active Packaging: Bulk |
auf Bestellung 2940 Stücke: Lieferzeit 10-14 Tag (e) |
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ESD259B1W0201E6327XTSA1 | Infineon Technologies |
Description: TVS DIODE 16VWM 25VC PGWLL23Power Line Protection: No Power - Peak Pulse: 62.5W Voltage - Clamping (Max) @ Ipp: 25V (Typ) Bidirectional Channels: 1 Supplier Device Package: PG-WLL-2-3 Voltage - Reverse Standoff (Typ): 16V Current - Peak Pulse (10/1000µs): 2.5A (8/20µs) Capacitance @ Frequency: 4.2pF @ 1MHz Applications: General Purpose Operating Temperature: -55°C ~ 125°C (TA) Type: Zener Mounting Type: Surface Mount Package / Case: 0201 (0603 Metric) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 15000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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ESD259B1W0201E6327XTSA1 | Infineon Technologies |
Description: TVS DIODE 16VWM 25VC PGWLL23Power Line Protection: No Power - Peak Pulse: 62.5W Voltage - Clamping (Max) @ Ipp: 25V (Typ) Bidirectional Channels: 1 Supplier Device Package: PG-WLL-2-3 Voltage - Reverse Standoff (Typ): 16V Current - Peak Pulse (10/1000µs): 2.5A (8/20µs) Capacitance @ Frequency: 4.2pF @ 1MHz Applications: General Purpose Operating Temperature: -55°C ~ 125°C (TA) Type: Zener Mounting Type: Surface Mount Package / Case: 0201 (0603 Metric) Packaging: Cut Tape (CT) |
auf Bestellung 16060 Stücke: Lieferzeit 10-14 Tag (e) |
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| T3401N33TOFS20XPSA1 | Infineon Technologies | Description: SCR MODULE HP T15035K-1 |
Produkt ist nicht verfügbar |
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| IR6220 | Infineon Technologies |
Description: IC PWR DRVR N-CHAN 1:1 TO220ABPackage / Case: TO-220-5 Features: Status Flag Packaging: Tube Part Status: Obsolete Fault Protection: Current Limiting (Fixed), Over Temperature Supplier Device Package: TO-220AB (5-LEAD) Ratio - Input:Output: 1:1 Current - Output (Max): 10A Voltage - Supply (Vcc/Vdd): Not Required Voltage - Load: 5V ~ 35V Input Type: Non-Inverting Rds On (Typ): 80mOhm Output Configuration: High Side Operating Temperature: -40°C ~ 150°C (TJ) Switch Type: General Purpose Interface: On/Off Number of Outputs: 1 Mounting Type: Through Hole Output Type: N-Channel |
Produkt ist nicht verfügbar |
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IR6220S | Infineon Technologies |
Description: IC PWR DRIVER N-CHAN 1:1 D2PAKVoltage - Supply (Vcc/Vdd): Not Required Voltage - Load: 5V ~ 35V Input Type: Non-Inverting Rds On (Typ): 80mOhm Output Configuration: High Side Operating Temperature: -40°C ~ 150°C (TJ) Switch Type: General Purpose Interface: On/Off Number of Outputs: 1 Mounting Type: Surface Mount Output Type: N-Channel Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB Features: Status Flag Packaging: Tube Part Status: Obsolete Fault Protection: Current Limiting (Fixed), Over Temperature Supplier Device Package: D2Pak (SMD-220 5-Lead) Ratio - Input:Output: 1:1 Current - Output (Max): 10A |
Produkt ist nicht verfügbar |
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IR6220STRL | Infineon Technologies |
Description: IC PWR DRIVER N-CHAN 1:1 D2PAKPart Status: Obsolete Fault Protection: Current Limiting (Fixed), Over Temperature Supplier Device Package: D2Pak (SMD-220 5-Lead) Ratio - Input:Output: 1:1 Current - Output (Max): 10A Voltage - Supply (Vcc/Vdd): Not Required Voltage - Load: 5V ~ 35V Input Type: Non-Inverting Rds On (Typ): 80mOhm Output Configuration: High Side Operating Temperature: -40°C ~ 150°C (TJ) Switch Type: General Purpose Interface: On/Off Number of Outputs: 1 Mounting Type: Surface Mount Output Type: N-Channel Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB Features: Status Flag Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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IDP30E60 | Infineon Technologies |
Description: DIODE GP 600V 52.3A TO220-2Current - Reverse Leakage @ Vr: 50 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: PG-TO220-2 Current - Average Rectified (Io): 52.3A Technology: Standard Reverse Recovery Time (trr): 126 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 323 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IGW15N120H3 | Infineon Technologies |
Description: IGW15N120 - DISCRETE IGBT WITHOU |
Produkt ist nicht verfügbar |
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TLT807B0EPVBOARDTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR TLT807B0EPVPackaging: Box Voltage - Output: 1.2V ~ 20V Voltage - Input: 2.75V ~ 42V Current - Output: 70mA Regulator Type: Positive Adjustable Board Type: Fully Populated Utilized IC / Part: TLT807B0EPV Supplied Contents: Board(s) Channels per IC: 1 - Single Part Status: Active Contents: Board(s) |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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IGA03N120H2 | Infineon Technologies |
Description: IGA03N120 - DISCRETE IGBT WITHOUPower - Max: 29 W Current - Collector Pulsed (Icm): 9 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 8.2 A Part Status: Active Gate Charge: 8.6 nC Test Condition: 800V, 3A, 82Ohm, 15V Switching Energy: 140µJ (on), 150µJ (off) Td (on/off) @ 25°C: 9.2ns/281ns Supplier Device Package: PG-TO220-3-31 Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A Input Type: Standard Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Bulk |
Produkt ist nicht verfügbar |
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| IGB03N120H2ATMA1616 | Infineon Technologies |
Description: POWER BIPOLAR TRANSISTOR Part Status: Active Packaging: Bulk |
Produkt ist nicht verfügbar |
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IKD04N60RC2ATMA1 | Infineon Technologies |
Description: IGBT TRENCH FS 600V 8A TO252-3Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 80 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 4A Supplier Device Package: PG-TO252-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 4ns/90ns Switching Energy: 100µJ (on), 40µJ (off) Test Condition: 400V, 4A, 49Ohm, 15V Gate Charge: 24 nC Part Status: Active Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 12 A Power - Max: 36.6 W |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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IKD04N60RC2ATMA1 | Infineon Technologies |
Description: IGBT TRENCH FS 600V 8A TO252-3Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 80 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 4A Supplier Device Package: PG-TO252-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 4ns/90ns Switching Energy: 100µJ (on), 40µJ (off) Test Condition: 400V, 4A, 49Ohm, 15V Gate Charge: 24 nC Part Status: Active Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 12 A Power - Max: 36.6 W |
auf Bestellung 9955 Stücke: Lieferzeit 10-14 Tag (e) |
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SPB04N50C3 | Infineon Technologies |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 200µA Supplier Device Package: PG-TO263-3-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V |
auf Bestellung 24560 Stücke: Lieferzeit 10-14 Tag (e) |
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SPB04N50C3ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 560V 4.5A TO263-3Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 200µA Supplier Device Package: PG-TO263-3-2 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 560 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V |
auf Bestellung 22241 Stücke: Lieferzeit 10-14 Tag (e) |
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BGA915N7E6327 | Infineon Technologies |
Description: IC AMP GPS 1.55-1.615GHZ TSNP7-6Part Status: Active Supplier Device Package: PG-TSNP-7-6 Test Frequency: 1575.42MHz P1dB: 7.8dBm Noise Figure: 0.7dB Current - Supply: 4.4mA Gain: 17.2dB Voltage - Supply: 1.5V ~ 3.6V RF Type: GPS Frequency: 1.55GHz ~ 1.615GHz Mounting Type: Surface Mount Package / Case: 6-XFDFN Exposed Pad Packaging: Bulk |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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| C167CSLMCAKXQLA2 | Infineon Technologies |
Description: IC MCU 16BIT ROMLESS 144MQFP DigiKey Programmable: Not Verified Number of I/O: 111 Supplier Device Package: P-MQFP-144-8 Peripherals: POR, PWM, WDT Connectivity: CANbus, EBI/EMI, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Core Size: 16-Bit Data Converters: A/D 24x10b Core Processor: C166 Program Memory Type: ROMless Oscillator Type: External Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 11K x 8 Speed: 25MHz Mounting Type: Surface Mount Package / Case: 144-BQFP Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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IKP15N65F5 | Infineon Technologies |
Description: IGBT 650V 30A 105W PG-TO220-3 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 53 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IRFCZ44VB | Infineon Technologies |
Description: MOSFET 60V 55A DIE Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: Die Rds On (Max) @ Id, Vgs: 16.5mOhm @ 55A, 10V Current - Continuous Drain (Id) @ 25°C: 55A Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: Die Packaging: Bulk Drain to Source Voltage (Vdss): 60 V |
Produkt ist nicht verfügbar |
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IRFI4020H-117PXKMA1 | Infineon Technologies |
Description: MOSFET 2N-CH 200V 9.1A TO220-5Packaging: Tube Package / Case: TO-220-5 Full Pack, Formed Leads Mounting Type: Through Hole Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 21W (Tc) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 9.1A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 25V Rds On (Max) @ Id, Vgs: 100mOhm @ 5.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Vgs(th) (Max) @ Id: 4.9V @ 100µA Supplier Device Package: TO-220-5 Full-Pak Part Status: Active |
Produkt ist nicht verfügbar |
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| BSM200GB120DN2S7HOSA1 | Infineon Technologies |
Description: INSULATED GATE BIPOLAR TRANSISTO Packaging: Bulk Part Status: Active |
Produkt ist nicht verfügbar |
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BSO203PH | Infineon Technologies |
Description: BSO203 - 20V-250V P-CHANNEL POWE |
auf Bestellung 2450 Stücke: Lieferzeit 10-14 Tag (e) |
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S6E1C12C0AGN20000 | Infineon Technologies |
Description: IC MCU 32BIT 128KB FLASH 48QFNPackaging: Tray Package / Case: 48-WFQFN Exposed Pad Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+ Data Converters: A/D 8x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V Connectivity: CSIO, I²C, LINbus, SmartCard, UART/USART Peripherals: I²S, LVD, POR, PWM, WDT Supplier Device Package: 48-QFN (7x7) Part Status: Active Number of I/O: 38 |
Produkt ist nicht verfügbar |
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| BCR158WH6327 | Infineon Technologies |
Description: BIPOLAR DIGITAL TRANSISTORPackaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-SOT323-3-1 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms |
Produkt ist nicht verfügbar |
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BCR158E6327 | Infineon Technologies |
Description: BIPOLAR DIGITAL TRANSISTORPackaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-SOT23-3-1 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms |
Produkt ist nicht verfügbar |
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BCR158WE6327 | Infineon Technologies |
Description: BIPOLAR DIGITAL TRANSISTORPackaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-SOT323-3-1 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms |
Produkt ist nicht verfügbar |
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BCR158 | Infineon Technologies |
Description: BIPOLAR DIGITAL TRANSISTORPackaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-SOT323-3-1 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms |
Produkt ist nicht verfügbar |
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| BCR158W | Infineon Technologies |
Description: BIPOLAR DIGITAL TRANSISTORPackaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-SOT323-3-1 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1875 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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TDSTD6895 | Infineon Technologies |
Description: BCR158 - DIGITAL TRANSISTORPackaging: Bulk Part Status: Active DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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ESD144B1W0201E6327XTSA1 | Infineon Technologies |
Description: TVS DIODE 18VWM 20VC WLL-2-2Packaging: Cut Tape (CT) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TA) Applications: HDMI, USB Capacitance @ Frequency: 0.2pF @ 1MHz Current - Peak Pulse (10/1000µs): 3.5A (8/20µs) Voltage - Reverse Standoff (Typ): 18V Supplier Device Package: WLL-2-2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 18.5V Voltage - Clamping (Max) @ Ipp: 20V Power - Peak Pulse: 21W Power Line Protection: Yes Part Status: Active |
auf Bestellung 156715 Stücke: Lieferzeit 10-14 Tag (e) |
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ESD233B1W0201E6327XTSA1 | Infineon Technologies |
Description: TVS DIODE 5.5VWM 13VC WLL-2-1Packaging: Cut Tape (CT) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TA) Applications: General Amplification Capacitance @ Frequency: 33pF @ 1MHz Current - Peak Pulse (10/1000µs): 5A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V Supplier Device Package: SG-WLL-2-1 Bidirectional Channels: 1 Voltage - Breakdown (Min): 7.5V Voltage - Clamping (Max) @ Ipp: 13V Power - Peak Pulse: 70W Power Line Protection: No Part Status: Active |
auf Bestellung 2391 Stücke: Lieferzeit 10-14 Tag (e) |
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IDW16G65C5FKSA1 | Infineon Technologies |
Description: DIODE SCHOTTKY 650V 16A TO247-3 |
Produkt ist nicht verfügbar |
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IPP60R180P7 | Infineon Technologies |
Description: IPP60R180 - 600V COOLMOS N-CHANNPackaging: Bulk Part Status: Active |
Produkt ist nicht verfügbar |
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XDPL8219XUMA1 | Infineon Technologies |
Description: IC LED DRVR CTRLR NO 100MA 8DSOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 15MHz Type: DC DC Controller Operating Temperature: -40°C ~ 85°C (TA) Applications: LED Lighting Current - Output / Channel: 100mA Internal Switch(s): Yes Topology: Flyback Supplier Device Package: PG-DSO-8-41 Dimming: No Voltage - Supply (Min): 6V Voltage - Supply (Max): 24V Part Status: Active |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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| FS200R07N3E4R_B11 | Infineon Technologies |
Description: FS200R07 - IGBT MODULEPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 200A NTC Thermistor: Yes Supplier Device Package: AG-ECONO3 IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 200 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 600 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 13 nF @ 25 V |
auf Bestellung 68 Stücke: Lieferzeit 10-14 Tag (e) |
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| FS200R12PT4 | Infineon Technologies |
Description: INSULATED GATE BIPOLAR TRANSISTO |
auf Bestellung 131 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC079N10NSGATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 13.4A 8TDSONInput Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Not For New Designs Supplier Device Package: PG-TDSON-8-1 Vgs(th) (Max) @ Id: 4V @ 110µA Power Dissipation (Max): 156W (Tc) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Vgs (Max): ±20V |
auf Bestellung 4701 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE5027CXAAD47AIHAMA1 | Infineon Technologies |
Description: SEN MR PWM PG-SSO-3-92Part Status: Obsolete Supplier Device Package: PG-SSO-3-92 Technology: Magnetoresistive Operating Temperature: -40°C ~ 175°C (TJ) Qualification: AEC-Q100 Grade: Automotive Axis: X, Y, Z Mounting Type: Through Hole Output Type: PWM Package / Case: 3-SSIP Module Packaging: Bulk |
auf Bestellung 40500 Stücke: Lieferzeit 10-14 Tag (e) |
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| TLE5027CXAAD47AGXAMA1 | Infineon Technologies |
Description: SEN MR PWM PG-SSO-3-92 Output Type: PWM Package / Case: 3-SSIP Module Packaging: Bulk Part Status: Obsolete Supplier Device Package: PG-SSO-3-92 Technology: Magnetoresistive Operating Temperature: -40°C ~ 175°C (TJ) Axis: X, Y, Z Mounting Type: Through Hole Qualification: AEC-Q100 Grade: Automotive |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE5009A16E1200XUMA1 | Infineon Technologies |
Description: IC HALL SENSOR LINEAR TDSO-16Technology: Magnetoresistive Actuator Type: External Magnet, Not Included Voltage - Supply: 3V ~ 3.6V Termination Style: Gull Wing Operating Temperature: -40°C ~ 125°C Output: Analog Voltage Mounting Type: Surface Mount Package / Case: 16-TSSOP (0.154", 3.90mm Width) Packaging: Bulk Qualification: AEC-Q100 Grade: Automotive Part Status: Active Output Signal: Cosine, Sine Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous Supplier Device Package: PG-TDSO-16 For Measuring: Angle |
auf Bestellung 19510 Stücke: Lieferzeit 10-14 Tag (e) |
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| TLE5009A16E2200XUMA1 | Infineon Technologies |
Description: IC HALL SENSOR LINEAR TDSO-16Part Status: Active Output Signal: Cosine, Sine Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous Supplier Device Package: PG-TDSO-16 For Measuring: Angle Technology: Magnetoresistive Actuator Type: External Magnet, Not Included Voltage - Supply: 4.5V ~ 5.5V Termination Style: Gull Wing Operating Temperature: -40°C ~ 125°C Output: Analog Voltage Mounting Type: Surface Mount Package / Case: 16-TSSOP (0.154", 3.90mm Width) Packaging: Bulk |
auf Bestellung 7253 Stücke: Lieferzeit 10-14 Tag (e) |
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| TLE5025CE6747HAMA1 | Infineon Technologies |
Description: MAG SWITCH SPEED SENSOR 3SSO |
auf Bestellung 12372 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE5027CIE6747HAMA1 | Infineon Technologies |
Description: SEN MR PWM PG-SSO-3-92Part Status: Obsolete Supplier Device Package: PG-SSO-3-92 Technology: Magnetoresistive Qualification: AEC-Q100 Grade: Automotive Operating Temperature: -40°C ~ 175°C (TJ) Axis: X, Y, Z Mounting Type: Through Hole Output Type: PWM Package / Case: 3-SSIP Module Packaging: Bulk |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE5009A16E2210XUMA1 | Infineon Technologies |
Description: IC HALL SENSOR LINEAR TDSO-16Qualification: AEC-Q100 Grade: Automotive Part Status: Active Output Signal: Cosine, Sine Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous Supplier Device Package: PG-TDSO-16 For Measuring: Angle Technology: Magnetoresistive Actuator Type: External Magnet, Not Included Voltage - Supply: 4.5V ~ 5.5V Termination Style: Gull Wing Operating Temperature: -40°C ~ 125°C Output: Analog Voltage Mounting Type: Surface Mount Package / Case: 16-TSSOP (0.154", 3.90mm Width) Packaging: Bulk |
auf Bestellung 21497 Stücke: Lieferzeit 10-14 Tag (e) |
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| BTS736L2NTMA1 | Infineon Technologies |
Description: BUFFER/INVERTER BASED PERIPHERAL |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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TLE4274GV50ATMA1 | Infineon Technologies |
Description: IC REG LINEAR FIXED LDO REGVoltage - Output (Min/Fixed): 5V Supplier Device Package: PG-TO263-3-1 Number of Regulators: 1 Voltage - Input (Max): 40V Current - Quiescent (Iq): 220 µA Output Configuration: Positive Operating Temperature: -40°C ~ 150°C (TJ) Current - Output: 400mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: TO-263-4, D²Pak (3 Leads + Tab), TO-263AA Packaging: Bulk Current - Supply (Max): 30 mA Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit Voltage Dropout (Max): 0.5V @ 250mA PSRR: 60dB (100Hz) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TLE4274GV50ATMA2 | Infineon Technologies |
Description: IC REG LIN 5V 400MA PG-TO263-3-1Packaging: Cut Tape (CT) Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 400mA Operating Temperature: -40°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 220 µA Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: PG-TO263-3-1 Voltage - Output (Min/Fixed): 5V Part Status: Active PSRR: 60dB (100Hz) Voltage Dropout (Max): 0.5V @ 250mA Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 30 mA Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 1165 Stücke: Lieferzeit 10-14 Tag (e) |
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CY7C4235V-15ASXC | Infineon Technologies |
Description: IC FIFO SYNC 2KX18 11NS 64TQFPCurrent - Supply (Max): 30mA Access Time: 11ns Data Rate: 66.7MHz Operating Temperature: 0°C ~ 70°C Memory Size: 36K (2K x 18) Function: Synchronous Mounting Type: Surface Mount Package / Case: 64-LQFP Packaging: Tray DigiKey Programmable: Not Verified Voltage - Supply: 3 V ~ 3.6 V Part Status: Obsolete FWFT Support: No Retransmit Capability: Yes Programmable Flags Support: Yes Expansion Type: Depth, Width Bus Directional: Uni-Directional Supplier Device Package: 64-TQFP (14x14) |
auf Bestellung 1008 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPD14N06S2-80 | Infineon Technologies |
Description: IPD14N06 - 55V-60V N-CHANNEL AUTPackaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 7A, 10V Power Dissipation (Max): 47W (Tc) Vgs(th) (Max) @ Id: 4V @ 14µA Supplier Device Package: PG-TO252-3-11 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 293 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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CY7C1041CV33-10BAJXE | Infineon Technologies |
Description: IC SRAM 4MBIT PARALLEL 48FBGAPackaging: Tray Package / Case: 48-TFBGA Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 3V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 48-FBGA (7x8.5) Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel Access Time: 10 ns Memory Organization: 256K x 16 DigiKey Programmable: Not Verified |
auf Bestellung 12965 Stücke: Lieferzeit 10-14 Tag (e) |
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CY7C1041CV33-10BAJXET | Infineon Technologies |
Description: IC SRAM 4MBIT PARALLEL 48FBGAPackaging: Cut Tape (CT) Package / Case: 48-TFBGA Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 3V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 48-FBGA (7x8.5) Part Status: Discontinued at Digi-Key Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel Access Time: 10 ns Memory Organization: 256K x 16 DigiKey Programmable: Not Verified |
auf Bestellung 1975 Stücke: Lieferzeit 10-14 Tag (e) |
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IPA60R125P6 | Infineon Technologies |
Description: POWER FIELD-EFFECT TRANSISTORGate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO220-3-111 Vgs(th) (Max) @ Id: 4.5V @ 960µA Power Dissipation (Max): 34W (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 11.6A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 100 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IPB60R600CP | Infineon Technologies |
Description: N-CHANNEL POWER MOSFETPower Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3.3A, 10V Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO263-3-2 Vgs(th) (Max) @ Id: 3.5V @ 220µA |
auf Bestellung 970 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB60R520CP | Infineon Technologies |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO263-3-2 Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 66W (Tc) Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
auf Bestellung 2996 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB60R250CPATMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 12A TO263-3Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO263-3-2 Vgs(th) (Max) @ Id: 3.5V @ 440µA Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Bulk |
auf Bestellung 62900 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB60R250CP | Infineon Technologies |
Description: N-CHANNEL POWER MOSFETCurrent - Continuous Drain (Id) @ 25°C: 12A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO263-3-2 Vgs(th) (Max) @ Id: 3.5V @ 520µA Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V |
auf Bestellung 41770 Stücke: Lieferzeit 10-14 Tag (e) |
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| TLE49452LE6004HBXA1-INF |
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Hersteller: Infineon Technologies
Description: HALL EFFECT SENSOR
Test Condition: 25°C
Supplier Device Package: PG-SSO-3-2
Current - Supply (Max): 8mA
Current - Output (Max): 100mA
Sensing Range: 6mT Trip, -6mT Release
Technology: Hall Effect
Voltage - Supply: 3.8V ~ 24V
Operating Temperature: -40°C ~ 170°C
Function: Bipolar Switch
Mounting Type: Through Hole
Polarization: North Pole, South Pole
Output Type: Open Collector
Package / Case: 3-SSIP, SSO-3-02
Features: Temperature Compensated
Packaging: Bulk
Description: HALL EFFECT SENSOR
Test Condition: 25°C
Supplier Device Package: PG-SSO-3-2
Current - Supply (Max): 8mA
Current - Output (Max): 100mA
Sensing Range: 6mT Trip, -6mT Release
Technology: Hall Effect
Voltage - Supply: 3.8V ~ 24V
Operating Temperature: -40°C ~ 170°C
Function: Bipolar Switch
Mounting Type: Through Hole
Polarization: North Pole, South Pole
Output Type: Open Collector
Package / Case: 3-SSIP, SSO-3-02
Features: Temperature Compensated
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ESD102-U2-099ELE6327XTSA1 |
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Hersteller: Infineon Technologies
Description: TRANS VOLTAGE SUPPRESSOR DIODE
Applications: DVI, Ethernet, HDMI, USB
Operating Temperature: -40°C ~ 125°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 4-XFDFN
Packaging: Bulk
Part Status: Active
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 11V (Typ)
Unidirectional Channels: 2
Supplier Device Package: TSLP-4-10
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Capacitance @ Frequency: 0.4pF @ 1MHz
Description: TRANS VOLTAGE SUPPRESSOR DIODE
Applications: DVI, Ethernet, HDMI, USB
Operating Temperature: -40°C ~ 125°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 4-XFDFN
Packaging: Bulk
Part Status: Active
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 11V (Typ)
Unidirectional Channels: 2
Supplier Device Package: TSLP-4-10
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Capacitance @ Frequency: 0.4pF @ 1MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KP229L2920 |
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Hersteller: Infineon Technologies
Description: SENSOR 37.71PSIA 4.7V DSOF8
Part Status: Active
Port Style: No Port
Supplier Device Package: PG-DSOF-8-16
Applications: Board Mount
Voltage - Supply: 4.5V ~ 5.5V
Termination Style: SMD (SMT) Tab
Operating Temperature: -40°C ~ 140°C (TA)
Accuracy: ±1.02PSI (7kPa)
Pressure Type: Absolute
Operating Pressure: 8.7 ~ 37.71PSI (60 ~ 260kPa)
Output: 0.3V ~ 4.7V
Mounting Type: Surface Mount
Output Type: Analog Voltage
Package / Case: 8-SMD Module
Features: Amplified Output, Temperature Compensated
Packaging: Bulk
Description: SENSOR 37.71PSIA 4.7V DSOF8
Part Status: Active
Port Style: No Port
Supplier Device Package: PG-DSOF-8-16
Applications: Board Mount
Voltage - Supply: 4.5V ~ 5.5V
Termination Style: SMD (SMT) Tab
Operating Temperature: -40°C ~ 140°C (TA)
Accuracy: ±1.02PSI (7kPa)
Pressure Type: Absolute
Operating Pressure: 8.7 ~ 37.71PSI (60 ~ 260kPa)
Output: 0.3V ~ 4.7V
Mounting Type: Surface Mount
Output Type: Analog Voltage
Package / Case: 8-SMD Module
Features: Amplified Output, Temperature Compensated
Packaging: Bulk
auf Bestellung 21067 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 84+ | 7.52 EUR |
| PEB22715HV1.0 |
auf Bestellung 2940 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 18+ | 30.12 EUR |
| ESD259B1W0201E6327XTSA1 |
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Hersteller: Infineon Technologies
Description: TVS DIODE 16VWM 25VC PGWLL23
Power Line Protection: No
Power - Peak Pulse: 62.5W
Voltage - Clamping (Max) @ Ipp: 25V (Typ)
Bidirectional Channels: 1
Supplier Device Package: PG-WLL-2-3
Voltage - Reverse Standoff (Typ): 16V
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Capacitance @ Frequency: 4.2pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Tape & Reel (TR)
Description: TVS DIODE 16VWM 25VC PGWLL23
Power Line Protection: No
Power - Peak Pulse: 62.5W
Voltage - Clamping (Max) @ Ipp: 25V (Typ)
Bidirectional Channels: 1
Supplier Device Package: PG-WLL-2-3
Voltage - Reverse Standoff (Typ): 16V
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Capacitance @ Frequency: 4.2pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ESD259B1W0201E6327XTSA1 |
![]() |
Hersteller: Infineon Technologies
Description: TVS DIODE 16VWM 25VC PGWLL23
Power Line Protection: No
Power - Peak Pulse: 62.5W
Voltage - Clamping (Max) @ Ipp: 25V (Typ)
Bidirectional Channels: 1
Supplier Device Package: PG-WLL-2-3
Voltage - Reverse Standoff (Typ): 16V
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Capacitance @ Frequency: 4.2pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Cut Tape (CT)
Description: TVS DIODE 16VWM 25VC PGWLL23
Power Line Protection: No
Power - Peak Pulse: 62.5W
Voltage - Clamping (Max) @ Ipp: 25V (Typ)
Bidirectional Channels: 1
Supplier Device Package: PG-WLL-2-3
Voltage - Reverse Standoff (Typ): 16V
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Capacitance @ Frequency: 4.2pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Cut Tape (CT)
auf Bestellung 16060 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 84+ | 0.25 EUR |
| 106+ | 0.2 EUR |
| 109+ | 0.19 EUR |
| T3401N33TOFS20XPSA1 |
Hersteller: Infineon Technologies
Description: SCR MODULE HP T15035K-1
Description: SCR MODULE HP T15035K-1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IR6220 |
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Hersteller: Infineon Technologies
Description: IC PWR DRVR N-CHAN 1:1 TO220AB
Package / Case: TO-220-5
Features: Status Flag
Packaging: Tube
Part Status: Obsolete
Fault Protection: Current Limiting (Fixed), Over Temperature
Supplier Device Package: TO-220AB (5-LEAD)
Ratio - Input:Output: 1:1
Current - Output (Max): 10A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 5V ~ 35V
Input Type: Non-Inverting
Rds On (Typ): 80mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Through Hole
Output Type: N-Channel
Description: IC PWR DRVR N-CHAN 1:1 TO220AB
Package / Case: TO-220-5
Features: Status Flag
Packaging: Tube
Part Status: Obsolete
Fault Protection: Current Limiting (Fixed), Over Temperature
Supplier Device Package: TO-220AB (5-LEAD)
Ratio - Input:Output: 1:1
Current - Output (Max): 10A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 5V ~ 35V
Input Type: Non-Inverting
Rds On (Typ): 80mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Through Hole
Output Type: N-Channel
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IR6220S |
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Hersteller: Infineon Technologies
Description: IC PWR DRIVER N-CHAN 1:1 D2PAK
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 5V ~ 35V
Input Type: Non-Inverting
Rds On (Typ): 80mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Features: Status Flag
Packaging: Tube
Part Status: Obsolete
Fault Protection: Current Limiting (Fixed), Over Temperature
Supplier Device Package: D2Pak (SMD-220 5-Lead)
Ratio - Input:Output: 1:1
Current - Output (Max): 10A
Description: IC PWR DRIVER N-CHAN 1:1 D2PAK
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 5V ~ 35V
Input Type: Non-Inverting
Rds On (Typ): 80mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Features: Status Flag
Packaging: Tube
Part Status: Obsolete
Fault Protection: Current Limiting (Fixed), Over Temperature
Supplier Device Package: D2Pak (SMD-220 5-Lead)
Ratio - Input:Output: 1:1
Current - Output (Max): 10A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IR6220STRL |
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Hersteller: Infineon Technologies
Description: IC PWR DRIVER N-CHAN 1:1 D2PAK
Part Status: Obsolete
Fault Protection: Current Limiting (Fixed), Over Temperature
Supplier Device Package: D2Pak (SMD-220 5-Lead)
Ratio - Input:Output: 1:1
Current - Output (Max): 10A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 5V ~ 35V
Input Type: Non-Inverting
Rds On (Typ): 80mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Features: Status Flag
Packaging: Tape & Reel (TR)
Description: IC PWR DRIVER N-CHAN 1:1 D2PAK
Part Status: Obsolete
Fault Protection: Current Limiting (Fixed), Over Temperature
Supplier Device Package: D2Pak (SMD-220 5-Lead)
Ratio - Input:Output: 1:1
Current - Output (Max): 10A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 5V ~ 35V
Input Type: Non-Inverting
Rds On (Typ): 80mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Features: Status Flag
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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| IDP30E60 |
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Hersteller: Infineon Technologies
Description: DIODE GP 600V 52.3A TO220-2
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: PG-TO220-2
Current - Average Rectified (Io): 52.3A
Technology: Standard
Reverse Recovery Time (trr): 126 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Bulk
Description: DIODE GP 600V 52.3A TO220-2
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: PG-TO220-2
Current - Average Rectified (Io): 52.3A
Technology: Standard
Reverse Recovery Time (trr): 126 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Bulk
Produkt ist nicht verfügbar
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| IGW15N120H3 |
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Hersteller: Infineon Technologies
Description: IGW15N120 - DISCRETE IGBT WITHOU
Description: IGW15N120 - DISCRETE IGBT WITHOU
Produkt ist nicht verfügbar
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| TLT807B0EPVBOARDTOBO1 |
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Hersteller: Infineon Technologies
Description: EVAL BOARD FOR TLT807B0EPV
Packaging: Box
Voltage - Output: 1.2V ~ 20V
Voltage - Input: 2.75V ~ 42V
Current - Output: 70mA
Regulator Type: Positive Adjustable
Board Type: Fully Populated
Utilized IC / Part: TLT807B0EPV
Supplied Contents: Board(s)
Channels per IC: 1 - Single
Part Status: Active
Contents: Board(s)
Description: EVAL BOARD FOR TLT807B0EPV
Packaging: Box
Voltage - Output: 1.2V ~ 20V
Voltage - Input: 2.75V ~ 42V
Current - Output: 70mA
Regulator Type: Positive Adjustable
Board Type: Fully Populated
Utilized IC / Part: TLT807B0EPV
Supplied Contents: Board(s)
Channels per IC: 1 - Single
Part Status: Active
Contents: Board(s)
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 128.14 EUR |
| IGA03N120H2 |
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Hersteller: Infineon Technologies
Description: IGA03N120 - DISCRETE IGBT WITHOU
Power - Max: 29 W
Current - Collector Pulsed (Icm): 9 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 8.2 A
Part Status: Active
Gate Charge: 8.6 nC
Test Condition: 800V, 3A, 82Ohm, 15V
Switching Energy: 140µJ (on), 150µJ (off)
Td (on/off) @ 25°C: 9.2ns/281ns
Supplier Device Package: PG-TO220-3-31
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
Input Type: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Description: IGA03N120 - DISCRETE IGBT WITHOU
Power - Max: 29 W
Current - Collector Pulsed (Icm): 9 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 8.2 A
Part Status: Active
Gate Charge: 8.6 nC
Test Condition: 800V, 3A, 82Ohm, 15V
Switching Energy: 140µJ (on), 150µJ (off)
Td (on/off) @ 25°C: 9.2ns/281ns
Supplier Device Package: PG-TO220-3-31
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
Input Type: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Produkt ist nicht verfügbar
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| IGB03N120H2ATMA1616 |
Hersteller: Infineon Technologies
Description: POWER BIPOLAR TRANSISTOR
Part Status: Active
Packaging: Bulk
Description: POWER BIPOLAR TRANSISTOR
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar
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| IKD04N60RC2ATMA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 8A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 4A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 4ns/90ns
Switching Energy: 100µJ (on), 40µJ (off)
Test Condition: 400V, 4A, 49Ohm, 15V
Gate Charge: 24 nC
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 36.6 W
Description: IGBT TRENCH FS 600V 8A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 4A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 4ns/90ns
Switching Energy: 100µJ (on), 40µJ (off)
Test Condition: 400V, 4A, 49Ohm, 15V
Gate Charge: 24 nC
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 36.6 W
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.64 EUR |
| 5000+ | 0.6 EUR |
| 7500+ | 0.56 EUR |
| IKD04N60RC2ATMA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 8A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 4A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 4ns/90ns
Switching Energy: 100µJ (on), 40µJ (off)
Test Condition: 400V, 4A, 49Ohm, 15V
Gate Charge: 24 nC
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 36.6 W
Description: IGBT TRENCH FS 600V 8A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 4A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 4ns/90ns
Switching Energy: 100µJ (on), 40µJ (off)
Test Condition: 400V, 4A, 49Ohm, 15V
Gate Charge: 24 nC
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 36.6 W
auf Bestellung 9955 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.43 EUR |
| 14+ | 1.54 EUR |
| 100+ | 1.01 EUR |
| 500+ | 0.79 EUR |
| 1000+ | 0.71 EUR |
| SPB04N50C3 |
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Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 200µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 200µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
auf Bestellung 24560 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 473+ | 1.27 EUR |
| SPB04N50C3ATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 560V 4.5A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 200µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
Description: MOSFET N-CH 560V 4.5A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 200µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
auf Bestellung 22241 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 315+ | 1.74 EUR |
| BGA915N7E6327 |
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Hersteller: Infineon Technologies
Description: IC AMP GPS 1.55-1.615GHZ TSNP7-6
Part Status: Active
Supplier Device Package: PG-TSNP-7-6
Test Frequency: 1575.42MHz
P1dB: 7.8dBm
Noise Figure: 0.7dB
Current - Supply: 4.4mA
Gain: 17.2dB
Voltage - Supply: 1.5V ~ 3.6V
RF Type: GPS
Frequency: 1.55GHz ~ 1.615GHz
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Bulk
Description: IC AMP GPS 1.55-1.615GHZ TSNP7-6
Part Status: Active
Supplier Device Package: PG-TSNP-7-6
Test Frequency: 1575.42MHz
P1dB: 7.8dBm
Noise Figure: 0.7dB
Current - Supply: 4.4mA
Gain: 17.2dB
Voltage - Supply: 1.5V ~ 3.6V
RF Type: GPS
Frequency: 1.55GHz ~ 1.615GHz
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Bulk
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 693+ | 0.82 EUR |
| C167CSLMCAKXQLA2 |
Hersteller: Infineon Technologies
Description: IC MCU 16BIT ROMLESS 144MQFP
DigiKey Programmable: Not Verified
Number of I/O: 111
Supplier Device Package: P-MQFP-144-8
Peripherals: POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 24x10b
Core Processor: C166
Program Memory Type: ROMless
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 11K x 8
Speed: 25MHz
Mounting Type: Surface Mount
Package / Case: 144-BQFP
Packaging: Tape & Reel (TR)
Description: IC MCU 16BIT ROMLESS 144MQFP
DigiKey Programmable: Not Verified
Number of I/O: 111
Supplier Device Package: P-MQFP-144-8
Peripherals: POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 24x10b
Core Processor: C166
Program Memory Type: ROMless
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 11K x 8
Speed: 25MHz
Mounting Type: Surface Mount
Package / Case: 144-BQFP
Packaging: Tape & Reel (TR)
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| IKP15N65F5 |
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Hersteller: Infineon Technologies
Description: IGBT 650V 30A 105W PG-TO220-3
Description: IGBT 650V 30A 105W PG-TO220-3
Produkt ist nicht verfügbar
Mindestbestellmenge: 53 Stücke
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| IRFCZ44VB |
Hersteller: Infineon Technologies
Description: MOSFET 60V 55A DIE
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: Die
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 55A, 10V
Current - Continuous Drain (Id) @ 25°C: 55A
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Drain to Source Voltage (Vdss): 60 V
Description: MOSFET 60V 55A DIE
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: Die
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 55A, 10V
Current - Continuous Drain (Id) @ 25°C: 55A
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Drain to Source Voltage (Vdss): 60 V
Produkt ist nicht verfügbar
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| IRFI4020H-117PXKMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 200V 9.1A TO220-5
Packaging: Tube
Package / Case: TO-220-5 Full Pack, Formed Leads
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 21W (Tc)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 9.1A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 25V
Rds On (Max) @ Id, Vgs: 100mOhm @ 5.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: TO-220-5 Full-Pak
Part Status: Active
Description: MOSFET 2N-CH 200V 9.1A TO220-5
Packaging: Tube
Package / Case: TO-220-5 Full Pack, Formed Leads
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 21W (Tc)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 9.1A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 25V
Rds On (Max) @ Id, Vgs: 100mOhm @ 5.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: TO-220-5 Full-Pak
Part Status: Active
Produkt ist nicht verfügbar
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| BSM200GB120DN2S7HOSA1 |
Hersteller: Infineon Technologies
Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Part Status: Active
Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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| BSO203PH |
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Hersteller: Infineon Technologies
Description: BSO203 - 20V-250V P-CHANNEL POWE
Description: BSO203 - 20V-250V P-CHANNEL POWE
auf Bestellung 2450 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 490+ | 1.17 EUR |
| S6E1C12C0AGN20000 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 48QFN
Packaging: Tray
Package / Case: 48-WFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 8x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I²C, LINbus, SmartCard, UART/USART
Peripherals: I²S, LVD, POR, PWM, WDT
Supplier Device Package: 48-QFN (7x7)
Part Status: Active
Number of I/O: 38
Description: IC MCU 32BIT 128KB FLASH 48QFN
Packaging: Tray
Package / Case: 48-WFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 8x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I²C, LINbus, SmartCard, UART/USART
Peripherals: I²S, LVD, POR, PWM, WDT
Supplier Device Package: 48-QFN (7x7)
Part Status: Active
Number of I/O: 38
Produkt ist nicht verfügbar
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| BCR158WH6327 |
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Hersteller: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| BCR158E6327 |
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Hersteller: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT23-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT23-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
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| BCR158WE6327 |
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Hersteller: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BCR158 |
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Hersteller: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BCR158W |
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Hersteller: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
Mindestbestellmenge: 1875 Stücke
Im Einkaufswagen
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| TDSTD6895 |
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Hersteller: Infineon Technologies
Description: BCR158 - DIGITAL TRANSISTOR
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
Description: BCR158 - DIGITAL TRANSISTOR
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ESD144B1W0201E6327XTSA1 |
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Hersteller: Infineon Technologies
Description: TVS DIODE 18VWM 20VC WLL-2-2
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: WLL-2-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 18.5V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 21W
Power Line Protection: Yes
Part Status: Active
Description: TVS DIODE 18VWM 20VC WLL-2-2
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: WLL-2-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 18.5V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 21W
Power Line Protection: Yes
Part Status: Active
auf Bestellung 156715 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 48+ | 0.44 EUR |
| 77+ | 0.27 EUR |
| 108+ | 0.19 EUR |
| 125+ | 0.17 EUR |
| 500+ | 0.12 EUR |
| ESD233B1W0201E6327XTSA1 |
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Hersteller: Infineon Technologies
Description: TVS DIODE 5.5VWM 13VC WLL-2-1
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: General Amplification
Capacitance @ Frequency: 33pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V
Supplier Device Package: SG-WLL-2-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.5V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 70W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5.5VWM 13VC WLL-2-1
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: General Amplification
Capacitance @ Frequency: 33pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V
Supplier Device Package: SG-WLL-2-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.5V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 70W
Power Line Protection: No
Part Status: Active
auf Bestellung 2391 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 50+ | 0.42 EUR |
| 73+ | 0.29 EUR |
| 135+ | 0.15 EUR |
| 500+ | 0.12 EUR |
| 1000+ | 0.086 EUR |
| 2000+ | 0.07 EUR |
| IDW16G65C5FKSA1 |
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Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 650V 16A TO247-3
Description: DIODE SCHOTTKY 650V 16A TO247-3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPP60R180P7 |
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Hersteller: Infineon Technologies
Description: IPP60R180 - 600V COOLMOS N-CHANN
Packaging: Bulk
Part Status: Active
Description: IPP60R180 - 600V COOLMOS N-CHANN
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| XDPL8219XUMA1 |
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Hersteller: Infineon Technologies
Description: IC LED DRVR CTRLR NO 100MA 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 15MHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 85°C (TA)
Applications: LED Lighting
Current - Output / Channel: 100mA
Internal Switch(s): Yes
Topology: Flyback
Supplier Device Package: PG-DSO-8-41
Dimming: No
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 24V
Part Status: Active
Description: IC LED DRVR CTRLR NO 100MA 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 15MHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 85°C (TA)
Applications: LED Lighting
Current - Output / Channel: 100mA
Internal Switch(s): Yes
Topology: Flyback
Supplier Device Package: PG-DSO-8-41
Dimming: No
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 24V
Part Status: Active
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.08 EUR |
| 10+ | 2.26 EUR |
| 25+ | 2.05 EUR |
| 100+ | 1.82 EUR |
| 250+ | 1.71 EUR |
| 500+ | 1.65 EUR |
| 1000+ | 1.64 EUR |
| FS200R07N3E4R_B11 |
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Hersteller: Infineon Technologies
Description: FS200R07 - IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
Description: FS200R07 - IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
auf Bestellung 68 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 427.04 EUR |
| FS200R12PT4 |
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Hersteller: Infineon Technologies
Description: INSULATED GATE BIPOLAR TRANSISTO
Description: INSULATED GATE BIPOLAR TRANSISTO
auf Bestellung 131 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 386.68 EUR |
| BSC079N10NSGATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 13.4A 8TDSON
Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TDSON-8-1
Vgs(th) (Max) @ Id: 4V @ 110µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Vgs (Max): ±20V
Description: MOSFET N-CH 100V 13.4A 8TDSON
Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TDSON-8-1
Vgs(th) (Max) @ Id: 4V @ 110µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Vgs (Max): ±20V
auf Bestellung 4701 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.43 EUR |
| 10+ | 3.72 EUR |
| 100+ | 2.7 EUR |
| 500+ | 2.25 EUR |
| 1000+ | 2.2 EUR |
| TLE5027CXAAD47AIHAMA1 |
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Hersteller: Infineon Technologies
Description: SEN MR PWM PG-SSO-3-92
Part Status: Obsolete
Supplier Device Package: PG-SSO-3-92
Technology: Magnetoresistive
Operating Temperature: -40°C ~ 175°C (TJ)
Qualification: AEC-Q100
Grade: Automotive
Axis: X, Y, Z
Mounting Type: Through Hole
Output Type: PWM
Package / Case: 3-SSIP Module
Packaging: Bulk
Description: SEN MR PWM PG-SSO-3-92
Part Status: Obsolete
Supplier Device Package: PG-SSO-3-92
Technology: Magnetoresistive
Operating Temperature: -40°C ~ 175°C (TJ)
Qualification: AEC-Q100
Grade: Automotive
Axis: X, Y, Z
Mounting Type: Through Hole
Output Type: PWM
Package / Case: 3-SSIP Module
Packaging: Bulk
auf Bestellung 40500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 118+ | 4.66 EUR |
| TLE5027CXAAD47AGXAMA1 |
Hersteller: Infineon Technologies
Description: SEN MR PWM PG-SSO-3-92
Output Type: PWM
Package / Case: 3-SSIP Module
Packaging: Bulk
Part Status: Obsolete
Supplier Device Package: PG-SSO-3-92
Technology: Magnetoresistive
Operating Temperature: -40°C ~ 175°C (TJ)
Axis: X, Y, Z
Mounting Type: Through Hole
Qualification: AEC-Q100
Grade: Automotive
Description: SEN MR PWM PG-SSO-3-92
Output Type: PWM
Package / Case: 3-SSIP Module
Packaging: Bulk
Part Status: Obsolete
Supplier Device Package: PG-SSO-3-92
Technology: Magnetoresistive
Operating Temperature: -40°C ~ 175°C (TJ)
Axis: X, Y, Z
Mounting Type: Through Hole
Qualification: AEC-Q100
Grade: Automotive
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 112+ | 4.91 EUR |
| TLE5009A16E1200XUMA1 |
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Hersteller: Infineon Technologies
Description: IC HALL SENSOR LINEAR TDSO-16
Technology: Magnetoresistive
Actuator Type: External Magnet, Not Included
Voltage - Supply: 3V ~ 3.6V
Termination Style: Gull Wing
Operating Temperature: -40°C ~ 125°C
Output: Analog Voltage
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Packaging: Bulk
Qualification: AEC-Q100
Grade: Automotive
Part Status: Active
Output Signal: Cosine, Sine
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Supplier Device Package: PG-TDSO-16
For Measuring: Angle
Description: IC HALL SENSOR LINEAR TDSO-16
Technology: Magnetoresistive
Actuator Type: External Magnet, Not Included
Voltage - Supply: 3V ~ 3.6V
Termination Style: Gull Wing
Operating Temperature: -40°C ~ 125°C
Output: Analog Voltage
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Packaging: Bulk
Qualification: AEC-Q100
Grade: Automotive
Part Status: Active
Output Signal: Cosine, Sine
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Supplier Device Package: PG-TDSO-16
For Measuring: Angle
auf Bestellung 19510 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 109+ | 5.07 EUR |
| TLE5009A16E2200XUMA1 |
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Hersteller: Infineon Technologies
Description: IC HALL SENSOR LINEAR TDSO-16
Part Status: Active
Output Signal: Cosine, Sine
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Supplier Device Package: PG-TDSO-16
For Measuring: Angle
Technology: Magnetoresistive
Actuator Type: External Magnet, Not Included
Voltage - Supply: 4.5V ~ 5.5V
Termination Style: Gull Wing
Operating Temperature: -40°C ~ 125°C
Output: Analog Voltage
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Packaging: Bulk
Description: IC HALL SENSOR LINEAR TDSO-16
Part Status: Active
Output Signal: Cosine, Sine
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Supplier Device Package: PG-TDSO-16
For Measuring: Angle
Technology: Magnetoresistive
Actuator Type: External Magnet, Not Included
Voltage - Supply: 4.5V ~ 5.5V
Termination Style: Gull Wing
Operating Temperature: -40°C ~ 125°C
Output: Analog Voltage
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Packaging: Bulk
auf Bestellung 7253 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 135+ | 4.66 EUR |
| TLE5025CE6747HAMA1 |
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Hersteller: Infineon Technologies
Description: MAG SWITCH SPEED SENSOR 3SSO
Description: MAG SWITCH SPEED SENSOR 3SSO
auf Bestellung 12372 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 150+ | 4 EUR |
| TLE5027CIE6747HAMA1 |
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Hersteller: Infineon Technologies
Description: SEN MR PWM PG-SSO-3-92
Part Status: Obsolete
Supplier Device Package: PG-SSO-3-92
Technology: Magnetoresistive
Qualification: AEC-Q100
Grade: Automotive
Operating Temperature: -40°C ~ 175°C (TJ)
Axis: X, Y, Z
Mounting Type: Through Hole
Output Type: PWM
Package / Case: 3-SSIP Module
Packaging: Bulk
Description: SEN MR PWM PG-SSO-3-92
Part Status: Obsolete
Supplier Device Package: PG-SSO-3-92
Technology: Magnetoresistive
Qualification: AEC-Q100
Grade: Automotive
Operating Temperature: -40°C ~ 175°C (TJ)
Axis: X, Y, Z
Mounting Type: Through Hole
Output Type: PWM
Package / Case: 3-SSIP Module
Packaging: Bulk
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 114+ | 4.84 EUR |
| TLE5009A16E2210XUMA1 |
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Hersteller: Infineon Technologies
Description: IC HALL SENSOR LINEAR TDSO-16
Qualification: AEC-Q100
Grade: Automotive
Part Status: Active
Output Signal: Cosine, Sine
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Supplier Device Package: PG-TDSO-16
For Measuring: Angle
Technology: Magnetoresistive
Actuator Type: External Magnet, Not Included
Voltage - Supply: 4.5V ~ 5.5V
Termination Style: Gull Wing
Operating Temperature: -40°C ~ 125°C
Output: Analog Voltage
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Packaging: Bulk
Description: IC HALL SENSOR LINEAR TDSO-16
Qualification: AEC-Q100
Grade: Automotive
Part Status: Active
Output Signal: Cosine, Sine
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Supplier Device Package: PG-TDSO-16
For Measuring: Angle
Technology: Magnetoresistive
Actuator Type: External Magnet, Not Included
Voltage - Supply: 4.5V ~ 5.5V
Termination Style: Gull Wing
Operating Temperature: -40°C ~ 125°C
Output: Analog Voltage
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Packaging: Bulk
auf Bestellung 21497 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 109+ | 5.07 EUR |
| BTS736L2NTMA1 |
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Hersteller: Infineon Technologies
Description: BUFFER/INVERTER BASED PERIPHERAL
Description: BUFFER/INVERTER BASED PERIPHERAL
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLE4274GV50ATMA1 |
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Hersteller: Infineon Technologies
Description: IC REG LINEAR FIXED LDO REG
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-TO263-3-1
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 220 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 400mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
Packaging: Bulk
Current - Supply (Max): 30 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.5V @ 250mA
PSRR: 60dB (100Hz)
Description: IC REG LINEAR FIXED LDO REG
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-TO263-3-1
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 220 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 400mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
Packaging: Bulk
Current - Supply (Max): 30 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.5V @ 250mA
PSRR: 60dB (100Hz)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLE4274GV50ATMA2 |
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Hersteller: Infineon Technologies
Description: IC REG LIN 5V 400MA PG-TO263-3-1
Packaging: Cut Tape (CT)
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-3-1
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG LIN 5V 400MA PG-TO263-3-1
Packaging: Cut Tape (CT)
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-3-1
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1165 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.72 EUR |
| 10+ | 2.75 EUR |
| 25+ | 2.5 EUR |
| 100+ | 2.24 EUR |
| 250+ | 2.11 EUR |
| 500+ | 2.03 EUR |
| CY7C4235V-15ASXC |
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Hersteller: Infineon Technologies
Description: IC FIFO SYNC 2KX18 11NS 64TQFP
Current - Supply (Max): 30mA
Access Time: 11ns
Data Rate: 66.7MHz
Operating Temperature: 0°C ~ 70°C
Memory Size: 36K (2K x 18)
Function: Synchronous
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Voltage - Supply: 3 V ~ 3.6 V
Part Status: Obsolete
FWFT Support: No
Retransmit Capability: Yes
Programmable Flags Support: Yes
Expansion Type: Depth, Width
Bus Directional: Uni-Directional
Supplier Device Package: 64-TQFP (14x14)
Description: IC FIFO SYNC 2KX18 11NS 64TQFP
Current - Supply (Max): 30mA
Access Time: 11ns
Data Rate: 66.7MHz
Operating Temperature: 0°C ~ 70°C
Memory Size: 36K (2K x 18)
Function: Synchronous
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Voltage - Supply: 3 V ~ 3.6 V
Part Status: Obsolete
FWFT Support: No
Retransmit Capability: Yes
Programmable Flags Support: Yes
Expansion Type: Depth, Width
Bus Directional: Uni-Directional
Supplier Device Package: 64-TQFP (14x14)
auf Bestellung 1008 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 16+ | 38.21 EUR |
| IPD14N06S2-80 |
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Hersteller: Infineon Technologies
Description: IPD14N06 - 55V-60V N-CHANNEL AUT
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 7A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 4V @ 14µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 293 pF @ 25 V
Description: IPD14N06 - 55V-60V N-CHANNEL AUT
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 7A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 4V @ 14µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 293 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY7C1041CV33-10BAJXE |
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Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-FBGA (7x8.5)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 4MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-FBGA (7x8.5)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
auf Bestellung 12965 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.59 EUR |
| CY7C1041CV33-10BAJXET |
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Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 48FBGA
Packaging: Cut Tape (CT)
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-FBGA (7x8.5)
Part Status: Discontinued at Digi-Key
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 4MBIT PARALLEL 48FBGA
Packaging: Cut Tape (CT)
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-FBGA (7x8.5)
Part Status: Discontinued at Digi-Key
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
auf Bestellung 1975 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.43 EUR |
| IPA60R125P6 |
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Hersteller: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-111
Vgs(th) (Max) @ Id: 4.5V @ 960µA
Power Dissipation (Max): 34W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 11.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 100 V
Description: POWER FIELD-EFFECT TRANSISTOR
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-111
Vgs(th) (Max) @ Id: 4.5V @ 960µA
Power Dissipation (Max): 34W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 11.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPB60R600CP |
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Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Description: N-CHANNEL POWER MOSFET
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 3.5V @ 220µA
auf Bestellung 970 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 295+ | 1.87 EUR |
| IPB60R520CP |
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Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 66W (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 66W (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
auf Bestellung 2996 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 258+ | 2.13 EUR |
| IPB60R250CPATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 12A TO263-3
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
Description: MOSFET N-CH 600V 12A TO263-3
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
auf Bestellung 62900 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 178+ | 3.09 EUR |
| IPB60R250CP |
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Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 3.5V @ 520µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V
Description: N-CHANNEL POWER MOSFET
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 3.5V @ 520µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V
auf Bestellung 41770 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 202+ | 2.96 EUR |




























