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SAF-XE167FM-48F80L AA SAF-XE167FM-48F80L AA Infineon Technologies XE167xM.pdf Description: IC MCU 16BIT 384KB FLASH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 384KB (384K x 8)
RAM Size: 34K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 24x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-4
Number of I/O: 119
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SAK-XE167FM-48F80L AA SAK-XE167FM-48F80L AA Infineon Technologies XE167xM.pdf Description: IC MCU 16BIT 384KB FLASH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 384KB (384K x 8)
RAM Size: 34K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 24x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-4
Number of I/O: 119
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TDB6HK180N16RRBOSA1 TDB6HK180N16RRBOSA1 Infineon Technologies Infineon-TDB6HK180N16RR-DS-v02_00-en_de.pdf?fileId=db3a304340f610c201410c3c35823305 Description: SCR MODULE VDRM 1600V 70A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter with Brake
Operating Temperature: 175°C (TJ)
Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode
Current - Hold (Ih) (Max): 220 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1600A @ 50Hz
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
Number of SCRs, Diodes: 3 SCRs, 3 Diodes
Voltage - Gate Trigger (Vgt) (Max): 2 V
NTC Thermistor: No
Supplier Device Package: AG-ECONO2B
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 515 W
Voltage - Off State: 1.6 kV
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
Produkt ist nicht verfügbar
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KP219N3621 KP219N3621 Infineon Technologies INFNS15308-1.pdf?t.download=true&u=5oefqw Description: SENSOR 14.79PSIA 4.95V DSOF8
Packaging: Bulk
Features: Amplified Output, Temperature Compensated
Package / Case: 8-SMD Module
Output Type: Analog Voltage
Mounting Type: Surface Mount
Output: 0.25V ~ 4.95V
Operating Pressure: 2.18 ~ 14.79PSI (15 ~ 102kPa)
Pressure Type: Absolute
Accuracy: ±0.65PSI (4.50kPa)
Operating Temperature: -40°C ~ 125°C (TA)
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Applications: Board Mount
Supplier Device Package: PG-DSOF-8-16
Port Style: No Port
Part Status: Active
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BA592E6327 BA592E6327 Infineon Technologies INFNS15690-1.pdf?t.download=true&u=5oefqw Description: BA592 - PIN DIODE
Packaging: Bulk
Package / Case: SC-76, SOD-323
Diode Type: Standard - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
Resistance @ If, F: 500mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: PG-SOD323-2-1
Part Status: Active
Current - Max: 100 mA
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BAR6402LRHE6327XTSA1 BAR6402LRHE6327XTSA1 Infineon Technologies BAR64.pdf Description: RF DIODE PIN 150V 250MW TSLP27
Packaging: Bulk
Package / Case: SOD-882
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-TSLP-2-7
Part Status: Obsolete
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
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BAR64-03W BAR64-03W Infineon Technologies INFN-S-A0002785839-1.pdf?t.download=true&u=5oefqw Description: BAR64 - PIN DIODE
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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BAR64-03WE6327 BAR64-03WE6327 Infineon Technologies INFNS15695-1.pdf?t.download=true&u=5oefqw Description: BAR64 - PIN DIODE
Packaging: Bulk
Package / Case: SC-76, SOD-323
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SOD323-2-1
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
Produkt ist nicht verfügbar
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BCW65A BCW65A Infineon Technologies INFNS06889-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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BCW65C BCW65C Infineon Technologies INFNS06889-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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TLE4205GNTMA1 Infineon Technologies Infineon-TLE4205G-DS-v01_01-EN.pdf?fileId=db3a304412b407950112b4393a186d4a Description: TLE4205 - SERVO AND STEPPER MOTO
Packaging: Bulk
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1A
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 6V ~ 32V
Applications: Automotive
Technology: Bipolar
Voltage - Load: 6V ~ 32V
Supplier Device Package: PG-DSO-20
Motor Type - AC, DC: Brushed DC
Part Status: Active
Produkt ist nicht verfügbar
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AUIR3242BOARDUNIDIRTOBO1 AUIR3242BOARDUNIDIRTOBO1 Infineon Technologies Infineon-SBSnG_auir3242-board-unidir-UserManual-v01_10-EN.pdf?fileId=5546d4626fc1ce0b016fd2aad4642e31 Description: AUIR3242S BOARD UNIDIR
Packaging: Bulk
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Utilized IC / Part: AUIR3242S
Supplied Contents: Board(s)
Part Status: Obsolete
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AUIR3242SDEMOBOARDTOBO1 Infineon Technologies Infineon-AUIR3242_demoboard-UserManual-v01_00-EN.pdf?fileId=5546d46270c4f93e017107a85ee948a8 Description: AUIR3242S DEMOBOARD
Produkt ist nicht verfügbar
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IGW25T120 IGW25T120 Infineon Technologies INFNS14051-1.pdf?t.download=true&u=5oefqw Description: IGW25T120 - DISCRETE IGBT WITHOU
Produkt ist nicht verfügbar
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BAS12504WH6327XTSA1 BAS12504WH6327XTSA1 Infineon Technologies INFNS11561-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOT 25V 100MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: SOT-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 25 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 35 mA
Current - Reverse Leakage @ Vr: 150 nA @ 25 V
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3000+0.35 EUR
6000+0.32 EUR
Mindestbestellmenge: 3000
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BAS12504WH6327XTSA1 BAS12504WH6327XTSA1 Infineon Technologies INFNS11561-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOT 25V 100MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: SOT-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 25 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 35 mA
Current - Reverse Leakage @ Vr: 150 nA @ 25 V
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13+1.44 EUR
20+0.90 EUR
100+0.58 EUR
500+0.45 EUR
1000+0.40 EUR
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BAS12507WH6327XTSA1 BAS12507WH6327XTSA1 Infineon Technologies INFNS11561-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOTT 25V SOT343-4-3
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: PG-SOT343-4-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 25 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 35 mA
Current - Reverse Leakage @ Vr: 150 nA @ 25 V
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17+1.04 EUR
23+0.77 EUR
100+0.65 EUR
500+0.51 EUR
1000+0.46 EUR
Mindestbestellmenge: 17
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IRS2982STRPBF IRS2982STRPBF Infineon Technologies irs2982spbf.pdf?fileId=5546d462533600a40153567b886d2850 Description: IC LED FLYBACK CTLR 8SOIC
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IRS2982STRPBF IRS2982STRPBF Infineon Technologies irs2982spbf.pdf?fileId=5546d462533600a40153567b886d2850 Description: IC LED FLYBACK CTLR 8SOIC
auf Bestellung 609 Stücke:
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IHW30N60T IHW30N60T Infineon Technologies INFNS30094-1.pdf?t.download=true&u=5oefqw Description: IHW30N60 - DISCRETE IGBT WITH AN
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: PG-TO247-3-21
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/254ns
Switching Energy: 770µJ (off)
Test Condition: 400V, 30A, 10.6Ohm, 15V
Gate Charge: 167 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 187 W
Produkt ist nicht verfügbar
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BAS4007WH6327 BAS4007WH6327 Infineon Technologies INFNS19700-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOT 40V SOT343-4
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT343-4
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
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2500+0.19 EUR
Mindestbestellmenge: 2500
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BAS40-07WH6327 Infineon Technologies INFNS19700-1.pdf?t.download=true&u=5oefqw Description: SCHOTTKY DIODE
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT343-4
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Produkt ist nicht verfügbar
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BAS40-07E6327 BAS40-07E6327 Infineon Technologies INFNS11688-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOT 40V 120MA SOT143
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: SOT143 (SC-61)
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
auf Bestellung 760249 Stücke:
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2500+0.19 EUR
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IPU95R450P7AKMA1 IPU95R450P7AKMA1 Infineon Technologies Infineon-IPU95R450P7-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb01643c5739505893 Description: MOSFET N-CH 950V 14A TO251-3
auf Bestellung 972 Stücke:
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3+6.09 EUR
10+5.48 EUR
100+4.40 EUR
500+3.62 EUR
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IFX1763LDVXUMA1 IFX1763LDVXUMA1 Infineon Technologies INFN-S-A0001171796-1.pdf?t.download=true&u=5oefqw Description: IC REG LIN POS ADJ 500MA TSON-10
Packaging: Cut Tape (CT)
Package / Case: 10-TFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 20V
Number of Regulators: 1
Supplier Device Package: PG-TSON-10
Voltage - Output (Max): 20V
Voltage - Output (Min/Fixed): 1.22V
Control Features: Enable
Part Status: Obsolete
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 0.45V @ 500mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 31 mA
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IFX1763LDV33XUMA1 IFX1763LDV33XUMA1 Infineon Technologies INFN-S-A0001171796-1.pdf?t.download=true&u=5oefqw Description: IC REG LIN 3.3V 500MA PG-TSON-10
Packaging: Tape & Reel (TR)
Package / Case: 10-TFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 20V
Number of Regulators: 1
Supplier Device Package: PG-TSON-10
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Obsolete
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 0.45V @ 500mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 31 mA
Produkt ist nicht verfügbar
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IPA60R190C6 IPA60R190C6 Infineon Technologies INFN-S-A0004583470-1.pdf?t.download=true&u=5oefqw Description: POWER FIELD-EFFECT TRANSISTOR, 2
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 630µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V
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TLE9461ESXUMA1 TLE9461ESXUMA1 Infineon Technologies Infineon-TLE9461ES-DS-v01_00-EN.pdf?fileId=5546d46264fee02f016519d670a2371c Description: IC SYST BASIS CHIP TSDSO-24-1
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Type: System Basis Chip (SBC)
Applications: CAN
Supplier Device Package: PG-TSDSO-24-1
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 9754 Stücke:
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4+4.96 EUR
10+3.72 EUR
25+3.41 EUR
100+3.07 EUR
250+2.90 EUR
500+2.81 EUR
1000+2.72 EUR
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2ED020I12FA Infineon Technologies Description: 2ED020 - GATE DRIVER
Packaging: Bulk
Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 13V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: PG-DSO-36
Rise / Fall Time (Typ): 30ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 1.5V, 3.5V
Current - Peak Output (Source, Sink): 2.4A, 2.4A
Part Status: Active
DigiKey Programmable: Not Verified
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IGW60T120 IGW60T120 Infineon Technologies INFNS14054-1.pdf?t.download=true&u=5oefqw Description: IGW60T120 - DISCRETE IGBT WITHOU
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BAT165E6327 Infineon Technologies Description: BAT165 - RECTIFIER DIODE, SCHOTT
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 12pF @ 10V, 1MHz
Current - Average Rectified (Io): 750mA
Supplier Device Package: PG-SOD323-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 750 mA
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BAT165 Infineon Technologies Description: DIODE SCHOTT 40V 750MA SOD323-2
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 12pF @ 10V, 1MHz
Current - Average Rectified (Io): 750mA
Supplier Device Package: PG-SOD323-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 750 mA
Produkt ist nicht verfügbar
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REFICL5102U52WCCTOBO1 REFICL5102U52WCCTOBO1 Infineon Technologies Infineon-EngineeringReport_REF_ICL5102_U52W_CC-ApplicationNotes-v01_00-EN.pdf?fileId=5546d46272e49d2a017357acca0b3f23 Description: EVAL KIT
Packaging: Bulk
Voltage - Output: 20V ~ 52V
Voltage - Input: 198 ~ 256 VAC
Utilized IC / Part: ICL5102
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Contents: Board(s)
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1+188.16 EUR
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IPP60R060P7 Infineon Technologies INFN-S-A0003370844-1.pdf?t.download=true&u=5oefqw Description: 600V, 0.06OHM, N-CHANNEL MOSFET,
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V
Power Dissipation (Max): 164W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: PG-TO220-3-123
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2895 pF @ 400 V
Produkt ist nicht verfügbar
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IKFW75N65EH5XKSA1 IKFW75N65EH5XKSA1 Infineon Technologies Infineon-IKFW75N65EH5-DataSheet-v02_01-EN.pdf?fileId=5546d46274cf54d50174d972d5b51efd Description: IGBT TRENCH FS 650V 80A HSIP247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 60A
Supplier Device Package: PG-HSIP247-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/206ns
Switching Energy: 1.8mJ (on), 600µJ (off)
Test Condition: 400V, 60A, 12Ohm, 15V
Gate Charge: 144 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 148 W
auf Bestellung 38 Stücke:
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2+16.76 EUR
30+9.93 EUR
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IKFW75N65ES5XKSA1 IKFW75N65ES5XKSA1 Infineon Technologies Infineon-IKFW75N65ES5-DataSheet-v02_01-EN.pdf?fileId=5546d46274cf54d50174d972e4191f00 Description: IGBT TRENCH FS 650V 80A HSIP247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 71 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 60A
Supplier Device Package: PG-HSIP247-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24ns/152ns
Switching Energy: 1.48mJ (on), 660µJ (off)
Test Condition: 400V, 60A, 8Ohm, 15V
Gate Charge: 144 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 148 W
auf Bestellung 241 Stücke:
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IKZ75N65NH5 Infineon Technologies INFN-S-A0000024566-1.pdf?t.download=true&u=5oefqw Description: IKZ75N65 - DISCRETE IGBT WITH AN
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 59 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: PG-TO247-4-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 52ns/412ns
Switching Energy: 880µJ (on), 520µJ (off)
Test Condition: 400V, 37.5A, 27Ohm, 15V
Gate Charge: 166 nC
Part Status: Active
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
Produkt ist nicht verfügbar
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BSP50E6327 BSP50E6327 Infineon Technologies INFNS10800-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN DARL 45V 1A SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT223-4
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1.5 W
Produkt ist nicht verfügbar
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IAUC120N06S5L032ATMA1 IAUC120N06S5L032ATMA1 Infineon Technologies Infineon-IAUC120N06S5L032-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f920171f468428461b1 Description: MOSFET N-CH 60V 120A TDSON-8-34
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 60A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 44µA
Supplier Device Package: PG-TDSON-8-34
Part Status: Active
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 51.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3823 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.81 EUR
Mindestbestellmenge: 5000
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IAUC120N06S5L032ATMA1 IAUC120N06S5L032ATMA1 Infineon Technologies Infineon-IAUC120N06S5L032-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f920171f468428461b1 Description: MOSFET N-CH 60V 120A TDSON-8-34
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 60A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 44µA
Supplier Device Package: PG-TDSON-8-34
Part Status: Active
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 51.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3823 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 19838 Stücke:
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8+2.27 EUR
10+1.80 EUR
100+1.30 EUR
500+1.03 EUR
1000+0.97 EUR
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IPD040N03LG IPD040N03LG Infineon Technologies INFNS16968-1.pdf?t.download=true&u=5oefqw Description: OPTLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 15 V
Produkt ist nicht verfügbar
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IPD40N03S4L08ATMA1 IPD40N03S4L08ATMA1 Infineon Technologies Infineon-IPD40N03S4L_08-DS-v01_01-en.pdf?fileId=db3a30431ddc9372011e2b3ad6c04d78 Description: MOSFET N-CH 30V 40A TO252-31
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 40A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 13µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 11282 Stücke:
Lieferzeit 10-14 Tag (e)
395+1.18 EUR
Mindestbestellmenge: 395
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IPB240N03S4LR9ATMA1 IPB240N03S4LR9ATMA1 Infineon Technologies Infineon-IPB240N03S4L-R9-DS-v01_01-EN.pdf?fileId=5546d46249a28d750149a36984b60479 Description: MOSFET N-CH 30V 240A TO263-7
Packaging: Bulk
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 0.92mOhm @ 100A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 180µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20300 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 21485 Stücke:
Lieferzeit 10-14 Tag (e)
112+4.16 EUR
Mindestbestellmenge: 112
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CY90911ASPMC-GS-111E1 CY90911ASPMC-GS-111E1 Infineon Technologies download Description: IC MCU 16BIT 64KB MROM 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16LX
Data Converters: A/D 16x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, LINbus, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRFR5505TRLPBF IRFR5505TRLPBF Infineon Technologies irfr5505pbf.pdf?fileId=5546d462533600a4015356358535210f Description: MOSFET P-CH 55V 18A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 9.6A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
Produkt ist nicht verfügbar
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IRFR5505TRLPBF IRFR5505TRLPBF Infineon Technologies irfr5505pbf.pdf?fileId=5546d462533600a4015356358535210f Description: MOSFET P-CH 55V 18A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 9.6A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
Produkt ist nicht verfügbar
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HYB25L512160AC-7.5 HYB25L512160AC-7.5 Infineon Technologies INFNS06572-1.pdf?t.download=true&u=5oefqw Description: IC DRAM 512MBIT PARALLEL 54FBGA
Packaging: Bulk
Package / Case: 54-LFBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TC)
Voltage - Supply: 2.3V ~ 3.6V
Technology: SDRAM - Mobile LPDDR
Clock Frequency: 133 MHz
Memory Format: DRAM
Supplier Device Package: 54-FBGA (8x12)
Part Status: Active
Write Cycle Time - Word, Page: 14ns
Memory Interface: Parallel
Access Time: 6 ns
Memory Organization: 32M x 16
Produkt ist nicht verfügbar
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HYB25L512160AC-7.5 REEL Infineon Technologies INFNS06572-1.pdf?t.download=true&u=5oefqw Description: IC DRAM 512MBIT PARALLEL 54FBGA
Packaging: Bulk
Package / Case: 54-LFBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TC)
Voltage - Supply: 2.3V ~ 3.6V
Technology: SDRAM - Mobile LPDDR
Clock Frequency: 133 MHz
Memory Format: DRAM
Supplier Device Package: 54-FBGA (8x12)
Part Status: Active
Write Cycle Time - Word, Page: 14ns
Memory Interface: Parallel
Access Time: 6 ns
Memory Organization: 32M x 16
Produkt ist nicht verfügbar
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IPB70N10S3L12ATMA1 IPB70N10S3L12ATMA1 Infineon Technologies Infineon-IPP_B_I70N10S3L-DS-v01_02-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a907bea255942&ack=t Description: MOSFET N-CH 100V 70A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 11.8mOhm @ 70A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 83µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5550 pF @ 25 V
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+1.94 EUR
Mindestbestellmenge: 1000
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IPB70N10S3L12ATMA1 IPB70N10S3L12ATMA1 Infineon Technologies Infineon-IPP_B_I70N10S3L-DS-v01_02-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a907bea255942&ack=t Description: MOSFET N-CH 100V 70A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 11.8mOhm @ 70A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 83µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5550 pF @ 25 V
auf Bestellung 19969 Stücke:
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4+5.77 EUR
10+3.78 EUR
100+2.64 EUR
500+2.16 EUR
Mindestbestellmenge: 4
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BSC070N10NS5SCATMA1 BSC070N10NS5SCATMA1 Infineon Technologies Infineon-BSC070N10NS5SC-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b701712f7de4910086 Description: MOSFET N-CH 100V 14A/82A 8SWSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 82A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 50µA
Supplier Device Package: PG-WSON-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+1.52 EUR
Mindestbestellmenge: 4000
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BSC070N10NS5SCATMA1 BSC070N10NS5SCATMA1 Infineon Technologies Infineon-BSC070N10NS5SC-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b701712f7de4910086 Description: MOSFET N-CH 100V 14A/82A 8SWSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 82A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 50µA
Supplier Device Package: PG-WSON-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V
auf Bestellung 7824 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.07 EUR
10+2.98 EUR
100+2.16 EUR
500+1.83 EUR
Mindestbestellmenge: 5
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BSC070N10LS5ATMA1 BSC070N10LS5ATMA1 Infineon Technologies Infineon-BSC070N10LS5-DataSheet-v02_00-EN.pdf?fileId=5546d4626bb628d7016bdc41b1c2214d Description: MOSFET N-CH 100V 14A/79A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 79A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 49µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V
Produkt ist nicht verfügbar
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BSC070N10LS5ATMA1 BSC070N10LS5ATMA1 Infineon Technologies Infineon-BSC070N10LS5-DataSheet-v02_00-EN.pdf?fileId=5546d4626bb628d7016bdc41b1c2214d Description: MOSFET N-CH 100V 14A/79A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 79A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 49µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V
auf Bestellung 3992 Stücke:
Lieferzeit 10-14 Tag (e)
6+2.97 EUR
10+2.28 EUR
25+2.05 EUR
100+1.78 EUR
250+1.63 EUR
500+1.53 EUR
1000+1.44 EUR
Mindestbestellmenge: 6
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BBY5502VH6327XTSA1 BBY5502VH6327XTSA1 Infineon Technologies INFNS15716-1.pdf?t.download=true&u=5oefqw Description: DIODE VARACTOR 16V SGL SC79-2
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 6.5pF @ 10V, 1MHz
Capacitance Ratio Condition: C2/C10
Supplier Device Package: PG-SC79-2
Voltage - Peak Reverse (Max): 16 V
Capacitance Ratio: 3.0
auf Bestellung 16820 Stücke:
Lieferzeit 10-14 Tag (e)
34+0.53 EUR
54+0.33 EUR
100+0.32 EUR
Mindestbestellmenge: 34
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IPD90N06S407ATMA2 IPD90N06S407ATMA2 Infineon Technologies Infineon-IPD90N06S4_07-DS-v01_00-en.pdf?fileId=db3a30431ff988150120386e3b5b0c87 Description: MOSFET N-CH 60V 90A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 90A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 40µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 47500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.72 EUR
Mindestbestellmenge: 2500
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IPD90N06S407ATMA2 IPD90N06S407ATMA2 Infineon Technologies Infineon-IPD90N06S4_07-DS-v01_00-en.pdf?fileId=db3a30431ff988150120386e3b5b0c87 Description: MOSFET N-CH 60V 90A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 90A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 40µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 51851 Stücke:
Lieferzeit 10-14 Tag (e)
16+1.14 EUR
18+1.01 EUR
100+0.88 EUR
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IPD90N06S4L-05 Infineon Technologies INFNS14111-1.pdf?t.download=true&u=5oefqw Description: IPD90N06 - 55V-60V N-CHANNEL AUT
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 90A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 60µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 25 V
Produkt ist nicht verfügbar
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IPI90N06S4L04AKSA2 IPI90N06S4L04AKSA2 Infineon Technologies Infineon-I90N06S4L_04-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038d111570ce3 Description: MOSFET N-CH 60V 90A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 90µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 46914 Stücke:
Lieferzeit 10-14 Tag (e)
221+2.10 EUR
Mindestbestellmenge: 221
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IPW60R125P6 Infineon Technologies INFNS30506-1.pdf?t.download=true&u=5oefqw Description: POWER FIELD-EFFECT TRANSISTOR
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 11.6A, 10V
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 960µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 100 V
Produkt ist nicht verfügbar
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SAF-XE167FM-48F80L AA XE167xM.pdf
SAF-XE167FM-48F80L AA
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 384KB FLASH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 384KB (384K x 8)
RAM Size: 34K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 24x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-4
Number of I/O: 119
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SAK-XE167FM-48F80L AA XE167xM.pdf
SAK-XE167FM-48F80L AA
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 384KB FLASH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 384KB (384K x 8)
RAM Size: 34K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 24x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-4
Number of I/O: 119
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TDB6HK180N16RRBOSA1 Infineon-TDB6HK180N16RR-DS-v02_00-en_de.pdf?fileId=db3a304340f610c201410c3c35823305
TDB6HK180N16RRBOSA1
Hersteller: Infineon Technologies
Description: SCR MODULE VDRM 1600V 70A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter with Brake
Operating Temperature: 175°C (TJ)
Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode
Current - Hold (Ih) (Max): 220 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1600A @ 50Hz
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
Number of SCRs, Diodes: 3 SCRs, 3 Diodes
Voltage - Gate Trigger (Vgt) (Max): 2 V
NTC Thermistor: No
Supplier Device Package: AG-ECONO2B
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 515 W
Voltage - Off State: 1.6 kV
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
Produkt ist nicht verfügbar
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KP219N3621 INFNS15308-1.pdf?t.download=true&u=5oefqw
KP219N3621
Hersteller: Infineon Technologies
Description: SENSOR 14.79PSIA 4.95V DSOF8
Packaging: Bulk
Features: Amplified Output, Temperature Compensated
Package / Case: 8-SMD Module
Output Type: Analog Voltage
Mounting Type: Surface Mount
Output: 0.25V ~ 4.95V
Operating Pressure: 2.18 ~ 14.79PSI (15 ~ 102kPa)
Pressure Type: Absolute
Accuracy: ±0.65PSI (4.50kPa)
Operating Temperature: -40°C ~ 125°C (TA)
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Applications: Board Mount
Supplier Device Package: PG-DSOF-8-16
Port Style: No Port
Part Status: Active
auf Bestellung 42180 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
87+6.09 EUR
Mindestbestellmenge: 87
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BA592E6327 INFNS15690-1.pdf?t.download=true&u=5oefqw
BA592E6327
Hersteller: Infineon Technologies
Description: BA592 - PIN DIODE
Packaging: Bulk
Package / Case: SC-76, SOD-323
Diode Type: Standard - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
Resistance @ If, F: 500mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: PG-SOD323-2-1
Part Status: Active
Current - Max: 100 mA
auf Bestellung 25252 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3904+0.14 EUR
Mindestbestellmenge: 3904
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BAR6402LRHE6327XTSA1 BAR64.pdf
BAR6402LRHE6327XTSA1
Hersteller: Infineon Technologies
Description: RF DIODE PIN 150V 250MW TSLP27
Packaging: Bulk
Package / Case: SOD-882
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-TSLP-2-7
Part Status: Obsolete
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12000+0.05 EUR
Mindestbestellmenge: 12000
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BAR64-03W INFN-S-A0002785839-1.pdf?t.download=true&u=5oefqw
BAR64-03W
Hersteller: Infineon Technologies
Description: BAR64 - PIN DIODE
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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BAR64-03WE6327 INFNS15695-1.pdf?t.download=true&u=5oefqw
BAR64-03WE6327
Hersteller: Infineon Technologies
Description: BAR64 - PIN DIODE
Packaging: Bulk
Package / Case: SC-76, SOD-323
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SOD323-2-1
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
Produkt ist nicht verfügbar
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BCW65A INFNS06889-1.pdf?t.download=true&u=5oefqw
BCW65A
Hersteller: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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BCW65C INFNS06889-1.pdf?t.download=true&u=5oefqw
BCW65C
Hersteller: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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TLE4205GNTMA1 Infineon-TLE4205G-DS-v01_01-EN.pdf?fileId=db3a304412b407950112b4393a186d4a
Hersteller: Infineon Technologies
Description: TLE4205 - SERVO AND STEPPER MOTO
Packaging: Bulk
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1A
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 6V ~ 32V
Applications: Automotive
Technology: Bipolar
Voltage - Load: 6V ~ 32V
Supplier Device Package: PG-DSO-20
Motor Type - AC, DC: Brushed DC
Part Status: Active
Produkt ist nicht verfügbar
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AUIR3242BOARDUNIDIRTOBO1 Infineon-SBSnG_auir3242-board-unidir-UserManual-v01_10-EN.pdf?fileId=5546d4626fc1ce0b016fd2aad4642e31
AUIR3242BOARDUNIDIRTOBO1
Hersteller: Infineon Technologies
Description: AUIR3242S BOARD UNIDIR
Packaging: Bulk
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Utilized IC / Part: AUIR3242S
Supplied Contents: Board(s)
Part Status: Obsolete
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+272.36 EUR
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AUIR3242SDEMOBOARDTOBO1 Infineon-AUIR3242_demoboard-UserManual-v01_00-EN.pdf?fileId=5546d46270c4f93e017107a85ee948a8
Hersteller: Infineon Technologies
Description: AUIR3242S DEMOBOARD
Produkt ist nicht verfügbar
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IGW25T120 INFNS14051-1.pdf?t.download=true&u=5oefqw
IGW25T120
Hersteller: Infineon Technologies
Description: IGW25T120 - DISCRETE IGBT WITHOU
Produkt ist nicht verfügbar
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BAS12504WH6327XTSA1 INFNS11561-1.pdf?t.download=true&u=5oefqw
BAS12504WH6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE ARR SCHOT 25V 100MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: SOT-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 25 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 35 mA
Current - Reverse Leakage @ Vr: 150 nA @ 25 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.35 EUR
6000+0.32 EUR
Mindestbestellmenge: 3000
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BAS12504WH6327XTSA1 INFNS11561-1.pdf?t.download=true&u=5oefqw
BAS12504WH6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE ARR SCHOT 25V 100MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: SOT-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 25 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 35 mA
Current - Reverse Leakage @ Vr: 150 nA @ 25 V
auf Bestellung 8857 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.44 EUR
20+0.90 EUR
100+0.58 EUR
500+0.45 EUR
1000+0.40 EUR
Mindestbestellmenge: 13
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BAS12507WH6327XTSA1 INFNS11561-1.pdf?t.download=true&u=5oefqw
BAS12507WH6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE ARR SCHOTT 25V SOT343-4-3
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: PG-SOT343-4-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 25 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 35 mA
Current - Reverse Leakage @ Vr: 150 nA @ 25 V
auf Bestellung 9714 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.04 EUR
23+0.77 EUR
100+0.65 EUR
500+0.51 EUR
1000+0.46 EUR
Mindestbestellmenge: 17
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IRS2982STRPBF irs2982spbf.pdf?fileId=5546d462533600a40153567b886d2850
IRS2982STRPBF
Hersteller: Infineon Technologies
Description: IC LED FLYBACK CTLR 8SOIC
Produkt ist nicht verfügbar
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IRS2982STRPBF irs2982spbf.pdf?fileId=5546d462533600a40153567b886d2850
IRS2982STRPBF
Hersteller: Infineon Technologies
Description: IC LED FLYBACK CTLR 8SOIC
auf Bestellung 609 Stücke:
Lieferzeit 10-14 Tag (e)
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IHW30N60T INFNS30094-1.pdf?t.download=true&u=5oefqw
IHW30N60T
Hersteller: Infineon Technologies
Description: IHW30N60 - DISCRETE IGBT WITH AN
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: PG-TO247-3-21
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/254ns
Switching Energy: 770µJ (off)
Test Condition: 400V, 30A, 10.6Ohm, 15V
Gate Charge: 167 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 187 W
Produkt ist nicht verfügbar
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BAS4007WH6327 INFNS19700-1.pdf?t.download=true&u=5oefqw
BAS4007WH6327
Hersteller: Infineon Technologies
Description: DIODE ARR SCHOT 40V SOT343-4
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT343-4
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.19 EUR
Mindestbestellmenge: 2500
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BAS40-07WH6327 INFNS19700-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: SCHOTTKY DIODE
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT343-4
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Produkt ist nicht verfügbar
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BAS40-07E6327 INFNS11688-1.pdf?t.download=true&u=5oefqw
BAS40-07E6327
Hersteller: Infineon Technologies
Description: DIODE ARR SCHOT 40V 120MA SOT143
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: SOT143 (SC-61)
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
auf Bestellung 760249 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.19 EUR
Mindestbestellmenge: 2500
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IPU95R450P7AKMA1 Infineon-IPU95R450P7-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb01643c5739505893
IPU95R450P7AKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 950V 14A TO251-3
auf Bestellung 972 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.09 EUR
10+5.48 EUR
100+4.40 EUR
500+3.62 EUR
Mindestbestellmenge: 3
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IFX1763LDVXUMA1 INFN-S-A0001171796-1.pdf?t.download=true&u=5oefqw
IFX1763LDVXUMA1
Hersteller: Infineon Technologies
Description: IC REG LIN POS ADJ 500MA TSON-10
Packaging: Cut Tape (CT)
Package / Case: 10-TFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 20V
Number of Regulators: 1
Supplier Device Package: PG-TSON-10
Voltage - Output (Max): 20V
Voltage - Output (Min/Fixed): 1.22V
Control Features: Enable
Part Status: Obsolete
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 0.45V @ 500mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 31 mA
Produkt ist nicht verfügbar
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IFX1763LDV33XUMA1 INFN-S-A0001171796-1.pdf?t.download=true&u=5oefqw
IFX1763LDV33XUMA1
Hersteller: Infineon Technologies
Description: IC REG LIN 3.3V 500MA PG-TSON-10
Packaging: Tape & Reel (TR)
Package / Case: 10-TFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 20V
Number of Regulators: 1
Supplier Device Package: PG-TSON-10
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Obsolete
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 0.45V @ 500mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 31 mA
Produkt ist nicht verfügbar
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IPA60R190C6 INFN-S-A0004583470-1.pdf?t.download=true&u=5oefqw
IPA60R190C6
Hersteller: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR, 2
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 630µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V
Produkt ist nicht verfügbar
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TLE9461ESXUMA1 Infineon-TLE9461ES-DS-v01_00-EN.pdf?fileId=5546d46264fee02f016519d670a2371c
TLE9461ESXUMA1
Hersteller: Infineon Technologies
Description: IC SYST BASIS CHIP TSDSO-24-1
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Type: System Basis Chip (SBC)
Applications: CAN
Supplier Device Package: PG-TSDSO-24-1
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 9754 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.96 EUR
10+3.72 EUR
25+3.41 EUR
100+3.07 EUR
250+2.90 EUR
500+2.81 EUR
1000+2.72 EUR
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2ED020I12FA
Hersteller: Infineon Technologies
Description: 2ED020 - GATE DRIVER
Packaging: Bulk
Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 13V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: PG-DSO-36
Rise / Fall Time (Typ): 30ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 1.5V, 3.5V
Current - Peak Output (Source, Sink): 2.4A, 2.4A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IGW60T120 INFNS14054-1.pdf?t.download=true&u=5oefqw
IGW60T120
Hersteller: Infineon Technologies
Description: IGW60T120 - DISCRETE IGBT WITHOU
Produkt ist nicht verfügbar
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BAT165E6327
Hersteller: Infineon Technologies
Description: BAT165 - RECTIFIER DIODE, SCHOTT
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 12pF @ 10V, 1MHz
Current - Average Rectified (Io): 750mA
Supplier Device Package: PG-SOD323-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 750 mA
Produkt ist nicht verfügbar
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BAT165
Hersteller: Infineon Technologies
Description: DIODE SCHOTT 40V 750MA SOD323-2
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 12pF @ 10V, 1MHz
Current - Average Rectified (Io): 750mA
Supplier Device Package: PG-SOD323-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 750 mA
Produkt ist nicht verfügbar
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REFICL5102U52WCCTOBO1 Infineon-EngineeringReport_REF_ICL5102_U52W_CC-ApplicationNotes-v01_00-EN.pdf?fileId=5546d46272e49d2a017357acca0b3f23
REFICL5102U52WCCTOBO1
Hersteller: Infineon Technologies
Description: EVAL KIT
Packaging: Bulk
Voltage - Output: 20V ~ 52V
Voltage - Input: 198 ~ 256 VAC
Utilized IC / Part: ICL5102
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Contents: Board(s)
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+188.16 EUR
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IPP60R060P7 INFN-S-A0003370844-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: 600V, 0.06OHM, N-CHANNEL MOSFET,
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V
Power Dissipation (Max): 164W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: PG-TO220-3-123
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2895 pF @ 400 V
Produkt ist nicht verfügbar
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IKFW75N65EH5XKSA1 Infineon-IKFW75N65EH5-DataSheet-v02_01-EN.pdf?fileId=5546d46274cf54d50174d972d5b51efd
IKFW75N65EH5XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 80A HSIP247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 60A
Supplier Device Package: PG-HSIP247-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/206ns
Switching Energy: 1.8mJ (on), 600µJ (off)
Test Condition: 400V, 60A, 12Ohm, 15V
Gate Charge: 144 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 148 W
auf Bestellung 38 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.76 EUR
30+9.93 EUR
Mindestbestellmenge: 2
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IKFW75N65ES5XKSA1 Infineon-IKFW75N65ES5-DataSheet-v02_01-EN.pdf?fileId=5546d46274cf54d50174d972e4191f00
IKFW75N65ES5XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 80A HSIP247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 71 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 60A
Supplier Device Package: PG-HSIP247-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24ns/152ns
Switching Energy: 1.48mJ (on), 660µJ (off)
Test Condition: 400V, 60A, 8Ohm, 15V
Gate Charge: 144 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 148 W
auf Bestellung 241 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.91 EUR
30+9.40 EUR
120+7.97 EUR
Mindestbestellmenge: 2
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IKZ75N65NH5 INFN-S-A0000024566-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IKZ75N65 - DISCRETE IGBT WITH AN
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 59 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: PG-TO247-4-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 52ns/412ns
Switching Energy: 880µJ (on), 520µJ (off)
Test Condition: 400V, 37.5A, 27Ohm, 15V
Gate Charge: 166 nC
Part Status: Active
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
Produkt ist nicht verfügbar
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BSP50E6327 INFNS10800-1.pdf?t.download=true&u=5oefqw
BSP50E6327
Hersteller: Infineon Technologies
Description: TRANS NPN DARL 45V 1A SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT223-4
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1.5 W
Produkt ist nicht verfügbar
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IAUC120N06S5L032ATMA1 Infineon-IAUC120N06S5L032-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f920171f468428461b1
IAUC120N06S5L032ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 120A TDSON-8-34
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 60A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 44µA
Supplier Device Package: PG-TDSON-8-34
Part Status: Active
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 51.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3823 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.81 EUR
Mindestbestellmenge: 5000
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IAUC120N06S5L032ATMA1 Infineon-IAUC120N06S5L032-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f920171f468428461b1
IAUC120N06S5L032ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 120A TDSON-8-34
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 60A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 44µA
Supplier Device Package: PG-TDSON-8-34
Part Status: Active
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 51.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3823 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 19838 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.27 EUR
10+1.80 EUR
100+1.30 EUR
500+1.03 EUR
1000+0.97 EUR
Mindestbestellmenge: 8
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IPD040N03LG INFNS16968-1.pdf?t.download=true&u=5oefqw
IPD040N03LG
Hersteller: Infineon Technologies
Description: OPTLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 15 V
Produkt ist nicht verfügbar
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IPD40N03S4L08ATMA1 Infineon-IPD40N03S4L_08-DS-v01_01-en.pdf?fileId=db3a30431ddc9372011e2b3ad6c04d78
IPD40N03S4L08ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 40A TO252-31
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 40A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 13µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 11282 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
395+1.18 EUR
Mindestbestellmenge: 395
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IPB240N03S4LR9ATMA1 Infineon-IPB240N03S4L-R9-DS-v01_01-EN.pdf?fileId=5546d46249a28d750149a36984b60479
IPB240N03S4LR9ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 240A TO263-7
Packaging: Bulk
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 0.92mOhm @ 100A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 180µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20300 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 21485 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
112+4.16 EUR
Mindestbestellmenge: 112
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CY90911ASPMC-GS-111E1 download
CY90911ASPMC-GS-111E1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 64KB MROM 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16LX
Data Converters: A/D 16x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, LINbus, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRFR5505TRLPBF irfr5505pbf.pdf?fileId=5546d462533600a4015356358535210f
IRFR5505TRLPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 55V 18A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 9.6A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
Produkt ist nicht verfügbar
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IRFR5505TRLPBF irfr5505pbf.pdf?fileId=5546d462533600a4015356358535210f
IRFR5505TRLPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 55V 18A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 9.6A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
Produkt ist nicht verfügbar
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HYB25L512160AC-7.5 INFNS06572-1.pdf?t.download=true&u=5oefqw
HYB25L512160AC-7.5
Hersteller: Infineon Technologies
Description: IC DRAM 512MBIT PARALLEL 54FBGA
Packaging: Bulk
Package / Case: 54-LFBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TC)
Voltage - Supply: 2.3V ~ 3.6V
Technology: SDRAM - Mobile LPDDR
Clock Frequency: 133 MHz
Memory Format: DRAM
Supplier Device Package: 54-FBGA (8x12)
Part Status: Active
Write Cycle Time - Word, Page: 14ns
Memory Interface: Parallel
Access Time: 6 ns
Memory Organization: 32M x 16
Produkt ist nicht verfügbar
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HYB25L512160AC-7.5 REEL INFNS06572-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IC DRAM 512MBIT PARALLEL 54FBGA
Packaging: Bulk
Package / Case: 54-LFBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TC)
Voltage - Supply: 2.3V ~ 3.6V
Technology: SDRAM - Mobile LPDDR
Clock Frequency: 133 MHz
Memory Format: DRAM
Supplier Device Package: 54-FBGA (8x12)
Part Status: Active
Write Cycle Time - Word, Page: 14ns
Memory Interface: Parallel
Access Time: 6 ns
Memory Organization: 32M x 16
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB70N10S3L12ATMA1 Infineon-IPP_B_I70N10S3L-DS-v01_02-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a907bea255942&ack=t
IPB70N10S3L12ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 70A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 11.8mOhm @ 70A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 83µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5550 pF @ 25 V
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+1.94 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
IPB70N10S3L12ATMA1 Infineon-IPP_B_I70N10S3L-DS-v01_02-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a907bea255942&ack=t
IPB70N10S3L12ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 70A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 11.8mOhm @ 70A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 83µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5550 pF @ 25 V
auf Bestellung 19969 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.77 EUR
10+3.78 EUR
100+2.64 EUR
500+2.16 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
BSC070N10NS5SCATMA1 Infineon-BSC070N10NS5SC-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b701712f7de4910086
BSC070N10NS5SCATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 14A/82A 8SWSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 82A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 50µA
Supplier Device Package: PG-WSON-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+1.52 EUR
Mindestbestellmenge: 4000
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BSC070N10NS5SCATMA1 Infineon-BSC070N10NS5SC-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b701712f7de4910086
BSC070N10NS5SCATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 14A/82A 8SWSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 82A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 50µA
Supplier Device Package: PG-WSON-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V
auf Bestellung 7824 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.07 EUR
10+2.98 EUR
100+2.16 EUR
500+1.83 EUR
Mindestbestellmenge: 5
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BSC070N10LS5ATMA1 Infineon-BSC070N10LS5-DataSheet-v02_00-EN.pdf?fileId=5546d4626bb628d7016bdc41b1c2214d
BSC070N10LS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 14A/79A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 79A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 49µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V
Produkt ist nicht verfügbar
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BSC070N10LS5ATMA1 Infineon-BSC070N10LS5-DataSheet-v02_00-EN.pdf?fileId=5546d4626bb628d7016bdc41b1c2214d
BSC070N10LS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 14A/79A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 79A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 49µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V
auf Bestellung 3992 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+2.97 EUR
10+2.28 EUR
25+2.05 EUR
100+1.78 EUR
250+1.63 EUR
500+1.53 EUR
1000+1.44 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
BBY5502VH6327XTSA1 INFNS15716-1.pdf?t.download=true&u=5oefqw
BBY5502VH6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE VARACTOR 16V SGL SC79-2
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 6.5pF @ 10V, 1MHz
Capacitance Ratio Condition: C2/C10
Supplier Device Package: PG-SC79-2
Voltage - Peak Reverse (Max): 16 V
Capacitance Ratio: 3.0
auf Bestellung 16820 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
54+0.33 EUR
100+0.32 EUR
Mindestbestellmenge: 34
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IPD90N06S407ATMA2 Infineon-IPD90N06S4_07-DS-v01_00-en.pdf?fileId=db3a30431ff988150120386e3b5b0c87
IPD90N06S407ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 90A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 90A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 40µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 47500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.72 EUR
Mindestbestellmenge: 2500
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IPD90N06S407ATMA2 Infineon-IPD90N06S4_07-DS-v01_00-en.pdf?fileId=db3a30431ff988150120386e3b5b0c87
IPD90N06S407ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 90A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 90A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 40µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 51851 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.14 EUR
18+1.01 EUR
100+0.88 EUR
Mindestbestellmenge: 16
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IPD90N06S4L-05 INFNS14111-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IPD90N06 - 55V-60V N-CHANNEL AUT
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 90A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 60µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 25 V
Produkt ist nicht verfügbar
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IPI90N06S4L04AKSA2 Infineon-I90N06S4L_04-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038d111570ce3
IPI90N06S4L04AKSA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 90A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 90µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 46914 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
221+2.10 EUR
Mindestbestellmenge: 221
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IPW60R125P6 INFNS30506-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 11.6A, 10V
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 960µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 100 V
Produkt ist nicht verfügbar
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