Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (151638) > Seite 1260 nach 2528
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BSP295H6327XTSA1 | INFINEON TECHNOLOGIES |
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BSP296NH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 1.2A; 1.8W; SOT223 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.2A Power dissipation: 1.8W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: SMD Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1620 Stücke: Lieferzeit 7-14 Tag (e) |
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BSP297H6327XTSA1 | INFINEON TECHNOLOGIES |
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auf Bestellung 793 Stücke: Lieferzeit 7-14 Tag (e) |
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BSP315PH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -1.17A; 1.8W; PG-SOT223 Type of transistor: P-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: -60V Drain current: -1.17A Power dissipation: 1.8W Case: PG-SOT223 Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: SMD Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2235 Stücke: Lieferzeit 7-14 Tag (e) |
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BSP316PH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -0.68A; 1.8W; PG-SOT223 Drain-source voltage: -100V Drain current: -680mA On-state resistance: 1.8Ω Type of transistor: P-MOSFET Power dissipation: 1.8W Polarisation: unipolar Technology: SIPMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: PG-SOT223 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 730 Stücke: Lieferzeit 7-14 Tag (e) |
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BSP317PH6327XTSA1 | INFINEON TECHNOLOGIES |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BSP322PH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -1A; 1.8W; PG-SOT223 Drain-source voltage: -100V Drain current: -1A On-state resistance: 0.8Ω Type of transistor: P-MOSFET Power dissipation: 1.8W Polarisation: unipolar Technology: SIPMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: PG-SOT223 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 881 Stücke: Lieferzeit 7-14 Tag (e) |
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BSP324H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 400V; 0.17A; 1.8W; SOT223 Mounting: SMD Case: SOT223 Drain-source voltage: 400V Drain current: 0.17A On-state resistance: 25Ω Type of transistor: N-MOSFET Power dissipation: 1.8W Polarisation: unipolar Technology: SIPMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 300 Stücke: Lieferzeit 7-14 Tag (e) |
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BSP372NH6327XTSA1 | INFINEON TECHNOLOGIES |
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auf Bestellung 521 Stücke: Lieferzeit 7-14 Tag (e) |
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BSP373NH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; 1.8W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.8A Power dissipation: 1.8W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.24Ω Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1920 Stücke: Lieferzeit 7-14 Tag (e) |
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BSP452 | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223-3 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.7A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SOT223-3 On-state resistance: 0.16Ω Technology: Classic PROFET Output voltage: 40V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2770 Stücke: Lieferzeit 7-14 Tag (e) |
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BSP50H6327XTSA1 | INFINEON TECHNOLOGIES |
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Produkt ist nicht verfügbar |
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BSP603S2L | INFINEON TECHNOLOGIES | BSP603S2L SMD N channel transistors |
Produkt ist nicht verfügbar |
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BSP613PH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -2.9A; 1.8W; PG-SOT223 Mounting: SMD Kind of channel: enhancement Type of transistor: P-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: -60V Drain current: -2.9A On-state resistance: 0.13Ω Power dissipation: 1.8W Case: PG-SOT223 Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 998 Stücke: Lieferzeit 7-14 Tag (e) |
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BSP61H6327XTSA1 | INFINEON TECHNOLOGIES |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BSP742R | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; SO8 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.4A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8 On-state resistance: 0.25Ω Technology: Classic PROFET Output voltage: 40V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1749 Stücke: Lieferzeit 7-14 Tag (e) |
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BSP742RIXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; SO8; reel Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.4A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8 On-state resistance: 0.25Ω Kind of package: reel Technology: Classic PROFET Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BSP742T | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 800mA; Ch: 1; N-Channel; SMD; SO8 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.8A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8 On-state resistance: 0.26Ω Output voltage: 40V Technology: Classic PROFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1640 Stücke: Lieferzeit 7-14 Tag (e) |
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BSP752R | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 1.3A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8 On-state resistance: 0.15Ω Output voltage: 52V Technology: Classic PROFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2674 Stücke: Lieferzeit 7-14 Tag (e) |
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BSP752T | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8 Case: SO8 On-state resistance: 0.15Ω Output voltage: 52V Output current: 1.3A Type of integrated circuit: power switch Number of channels: 1 Kind of output: N-Channel Technology: Classic PROFET Kind of integrated circuit: high-side Mounting: SMD Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
BSP752TXUMA1 | INFINEON TECHNOLOGIES |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BSP762T | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 2A; Ch: 1; N-Channel; SMD; SO8 Type of integrated circuit: power switch Output current: 2A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8 On-state resistance: 70mΩ Output voltage: 40V Technology: Classic PROFET Kind of integrated circuit: high-side Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2439 Stücke: Lieferzeit 7-14 Tag (e) |
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BSP76E6433 | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; low-side; 1.4A; Ch: 1; N-Channel; SMD; PG-SOT223-4 Mounting: SMD Technology: HITFET® Kind of integrated circuit: low-side Kind of output: N-Channel Case: PG-SOT223-4 Type of integrated circuit: power switch Number of channels: 1 Output current: 1.4A Output voltage: 42V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2301 Stücke: Lieferzeit 7-14 Tag (e) |
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BSP772T | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 2.6A; Ch: 1; N-Channel; SMD; SO8 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 2.6A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8 On-state resistance: 50mΩ Supply voltage: 5...34V DC Technology: Classic PROFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1673 Stücke: Lieferzeit 7-14 Tag (e) |
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BSP77E6433 | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; low-side; 2.17A; Ch: 1; N-Channel; SMD; SOT223-3 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 2.17A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SOT223-3 On-state resistance: 70mΩ Technology: HITFET® Output voltage: 42V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3057 Stücke: Lieferzeit 7-14 Tag (e) |
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BSP78 | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; SOT223-3 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 3A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SOT223-3 On-state resistance: 35mΩ Technology: HITFET® Output voltage: 42V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2569 Stücke: Lieferzeit 7-14 Tag (e) |
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BSP88H6327XTSA1 | INFINEON TECHNOLOGIES |
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auf Bestellung 343 Stücke: Lieferzeit 7-14 Tag (e) |
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BSP89H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 240V; 0.35A; 1.8W; SOT223 Type of transistor: N-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: 240V Drain current: 0.35A Power dissipation: 1.8W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: SMD Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 428 Stücke: Lieferzeit 7-14 Tag (e) |
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BSP92PH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -250V; -0.26A; 1.8W; PG-SOT223 Drain-source voltage: -250V Drain current: -0.26A On-state resistance: 12Ω Type of transistor: P-MOSFET Power dissipation: 1.8W Polarisation: unipolar Technology: SIPMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: PG-SOT223 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2907 Stücke: Lieferzeit 7-14 Tag (e) |
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BSR202NL6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 3.8A; 0.5W; SC59 Case: SC59 Mounting: SMD Type of transistor: N-MOSFET Technology: OptiMOS™ 2 Polarisation: unipolar On-state resistance: 21mΩ Power dissipation: 0.5W Drain current: 3.8A Gate-source voltage: ±12V Drain-source voltage: 20V Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2763 Stücke: Lieferzeit 7-14 Tag (e) |
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BSR302NL6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 3.7A; 0.5W; SC59 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Technology: OptiMOS™ 2 Polarisation: unipolar On-state resistance: 36mΩ Power dissipation: 0.5W Drain current: 3.7A Gate-source voltage: ±20V Drain-source voltage: 30V Case: SC59 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BSR315PH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -0.49A; 0.5W; SC59 Type of transistor: P-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: -60V Drain current: -0.49A Power dissipation: 0.5W Case: SC59 Gate-source voltage: ±20V On-state resistance: 1.3Ω Mounting: SMD Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2400 Stücke: Lieferzeit 7-14 Tag (e) |
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BSR316PH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -0.29A; 0.5W; SC59 Drain-source voltage: -100V Drain current: -0.29A On-state resistance: 2.2Ω Type of transistor: P-MOSFET Power dissipation: 0.5W Polarisation: unipolar Technology: SIPMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: SC59 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1178 Stücke: Lieferzeit 7-14 Tag (e) |
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BSR802NL6327HTSA1 | INFINEON TECHNOLOGIES |
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auf Bestellung 423 Stücke: Lieferzeit 7-14 Tag (e) |
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BSR92PH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -250V; -0.11A; 0.5W; SC59 Type of transistor: P-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: -250V Drain current: -0.11A Power dissipation: 0.5W Case: SC59 Gate-source voltage: ±20V On-state resistance: 20Ω Mounting: SMD Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1888 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS119NH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 0.19A; 0.5W; SOT23 Type of transistor: N-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.19A Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: SMD Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4289 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS123IXTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23 Case: SOT23 Mounting: SMD Type of transistor: N-MOSFET Technology: OptiMOS™ Gate charge: 0.63nC Drain current: 0.15A Power dissipation: 0.5W Pulsed drain current: 0.77A On-state resistance: 10Ω Gate-source voltage: ±20V Drain-source voltage: 100V Polarisation: unipolar Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1666 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS123NH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23 Case: SOT23 Mounting: SMD Type of transistor: N-MOSFET Technology: OptiMOS™ Gate charge: 0.6nC Drain current: 0.15A Power dissipation: 0.5W Pulsed drain current: 0.77A On-state resistance: 10Ω Gate-source voltage: ±20V Drain-source voltage: 100V Polarisation: unipolar Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 23474 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS123NH6433XTMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23 Case: SOT23 Mounting: SMD Type of transistor: N-MOSFET Technology: OptiMOS™ Gate charge: 0.6nC Drain current: 0.15A Power dissipation: 0.5W Pulsed drain current: 0.77A On-state resistance: 10Ω Gate-source voltage: ±20V Drain-source voltage: 100V Polarisation: unipolar Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1973 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS126H6327XTSA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 0.021A; 0.5W; SOT23 Case: SOT23 Mounting: SMD Type of transistor: N-MOSFET Technology: SIPMOS™ Drain current: 21mA Power dissipation: 0.5W On-state resistance: 700Ω Gate-source voltage: ±20V Drain-source voltage: 600V Polarisation: unipolar Kind of channel: depletion Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2461 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS127H6327XTSA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 0.021A; 0.5W; SOT23 Case: SOT23 Mounting: SMD Type of transistor: N-MOSFET Technology: SIPMOS™ Drain current: 21mA Power dissipation: 0.5W On-state resistance: 500Ω Gate-source voltage: ±20V Drain-source voltage: 600V Polarisation: unipolar Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3361 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS131H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 240V; 0.1A; 0.36W; SOT23 Type of transistor: N-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: 240V Drain current: 0.1A Power dissipation: 0.36W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 14Ω Mounting: SMD Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 6695 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS138NH6327XTSA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.36W; SOT23 Kind of channel: enhancement Technology: SIPMOS™ Polarisation: unipolar Type of transistor: N-MOSFET Case: SOT23 Mounting: SMD Drain current: 0.23A Power dissipation: 0.36W On-state resistance: 3.5Ω Gate-source voltage: ±20V Drain-source voltage: 60V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1141 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS138NH6433XTMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; SIPMOS®; unipolar; 60V; 180mA; Idm: 0.92A Kind of channel: enhancement Technology: SIPMOS® Polarisation: unipolar Type of transistor: N-MOSFET Case: SOT23 Mounting: SMD Drain current: 0.18A Power dissipation: 0.36W Pulsed drain current: 0.92A On-state resistance: 3.5Ω Gate-source voltage: ±20V Drain-source voltage: 60V Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BSS138WH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.28A; 0.5W; SOT323 Kind of channel: enhancement Technology: SIPMOS™ Polarisation: unipolar Type of transistor: N-MOSFET Case: SOT323 Mounting: SMD Drain current: 0.28A Power dissipation: 0.5W On-state resistance: 3.5Ω Gate-source voltage: ±20V Drain-source voltage: 60V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2273 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS138WH6433XTMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; SIPMOS®; unipolar; 60V; 220mA; Idm: 1.12A Kind of channel: enhancement Technology: SIPMOS® Polarisation: unipolar Type of transistor: N-MOSFET Case: SOT323 Mounting: SMD Drain current: 0.22A Power dissipation: 0.5W Pulsed drain current: 1.12A On-state resistance: 3.5Ω Gate-source voltage: ±20V Drain-source voltage: 60V Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BSS139H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 0.1A; 0.36W; SOT23 Type of transistor: N-MOSFET Case: SOT23 Drain-source voltage: 250V Drain current: 0.1A On-state resistance: 30Ω Mounting: SMD Power dissipation: 0.36W Polarisation: unipolar Technology: SIPMOS™ Kind of channel: depletion Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BSS159NH6327XTSA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.36W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.23A Power dissipation: 0.36W Case: SOT23 On-state resistance: 8Ω Mounting: SMD Kind of channel: depletion Technology: SIPMOS™ Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1422 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS169H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.36W; SOT23 Case: SOT23 Mounting: SMD Technology: SIPMOS™ Polarisation: unipolar Drain current: 0.17A Power dissipation: 0.36W On-state resistance: 12Ω Gate-source voltage: ±20V Drain-source voltage: 100V Kind of channel: depletion Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3030 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS192PH6327FTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -250V; -0.19A; 1W; PG-SOT89 Drain-source voltage: -250V Drain current: -0.19A On-state resistance: 12Ω Type of transistor: P-MOSFET Power dissipation: 1W Polarisation: unipolar Technology: SIPMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: PG-SOT89 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 620 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS205NH6327XTSA1 | INFINEON TECHNOLOGIES |
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auf Bestellung 6013 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS209PWH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -0.63A; 0.3W; PG-SOT-323 Type of transistor: P-MOSFET Technology: OptiMOS™ P Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.63A Power dissipation: 0.3W Case: PG-SOT-323 Gate-source voltage: ±12V On-state resistance: 0.55Ω Mounting: SMD Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3699 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS214NH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT23 Mounting: SMD Technology: OptiMOS™ 2 Kind of channel: enhancement Gate-source voltage: ±12V Case: SOT23 Drain-source voltage: 20V Drain current: 1.5A On-state resistance: 0.25Ω Type of transistor: N-MOSFET Power dissipation: 0.5W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5227 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS214NWH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT323 Type of transistor: N-MOSFET Technology: OptiMOS™ 2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 1.5A Power dissipation: 0.5W Case: SOT323 Gate-source voltage: ±12V On-state resistance: 0.25Ω Mounting: SMD Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3381 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS215PH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -1.5A; 0.5W; PG-SOT23 Mounting: SMD Technology: OptiMOS™ P2 Kind of channel: enhancement Gate-source voltage: ±12V Case: PG-SOT23 Drain-source voltage: -20V Drain current: -1.5A On-state resistance: 0.15Ω Type of transistor: P-MOSFET Power dissipation: 0.5W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1628 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS223PWH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -0.39A; 0.25W; PG-SOT-323 Type of transistor: P-MOSFET Technology: OptiMOS™ P Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.39A Power dissipation: 0.25W Case: PG-SOT-323 Gate-source voltage: ±12V On-state resistance: 1.2Ω Mounting: SMD Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1265 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS225H6327FTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 0.09A; 1W; SOT89 Type of transistor: N-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.09A Power dissipation: 1W Case: SOT89 Gate-source voltage: ±20V On-state resistance: 45Ω Mounting: SMD Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 522 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS306NH6327XTSA1 | INFINEON TECHNOLOGIES |
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auf Bestellung 6915 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS308PEH6327XTSA1 | INFINEON TECHNOLOGIES |
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auf Bestellung 5645 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS314PEH6327XTSA1 | INFINEON TECHNOLOGIES |
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auf Bestellung 8017 Stücke: Lieferzeit 7-14 Tag (e) |
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BSP295H6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
BSP295H6327XTSA1 SMD N channel transistors
BSP295H6327XTSA1 SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSP296NH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.2A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.2A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.2A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.2A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1620 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.4 EUR |
205+ | 0.35 EUR |
224+ | 0.32 EUR |
240+ | 0.3 EUR |
252+ | 0.28 EUR |
266+ | 0.27 EUR |
BSP297H6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
BSP297H6327XTSA1 SMD N channel transistors
BSP297H6327XTSA1 SMD N channel transistors
auf Bestellung 793 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
66+ | 1.09 EUR |
162+ | 0.44 EUR |
172+ | 0.42 EUR |
BSP315PH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.17A; 1.8W; PG-SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.17A
Power dissipation: 1.8W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.17A; 1.8W; PG-SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.17A
Power dissipation: 1.8W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2235 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
66+ | 1.09 EUR |
92+ | 0.79 EUR |
211+ | 0.34 EUR |
224+ | 0.32 EUR |
BSP316PH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.68A; 1.8W; PG-SOT223
Drain-source voltage: -100V
Drain current: -680mA
On-state resistance: 1.8Ω
Type of transistor: P-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-SOT223
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.68A; 1.8W; PG-SOT223
Drain-source voltage: -100V
Drain current: -680mA
On-state resistance: 1.8Ω
Type of transistor: P-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-SOT223
Anzahl je Verpackung: 1 Stücke
auf Bestellung 730 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
136+ | 0.53 EUR |
169+ | 0.42 EUR |
186+ | 0.39 EUR |
211+ | 0.34 EUR |
223+ | 0.32 EUR |
BSP317PH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
BSP317PH6327XTSA1 SMD P channel transistors
BSP317PH6327XTSA1 SMD P channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSP322PH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -1A; 1.8W; PG-SOT223
Drain-source voltage: -100V
Drain current: -1A
On-state resistance: 0.8Ω
Type of transistor: P-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-SOT223
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -1A; 1.8W; PG-SOT223
Drain-source voltage: -100V
Drain current: -1A
On-state resistance: 0.8Ω
Type of transistor: P-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-SOT223
Anzahl je Verpackung: 1 Stücke
auf Bestellung 881 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
65+ | 1.1 EUR |
109+ | 0.66 EUR |
121+ | 0.59 EUR |
153+ | 0.47 EUR |
162+ | 0.44 EUR |
BSP324H6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 0.17A; 1.8W; SOT223
Mounting: SMD
Case: SOT223
Drain-source voltage: 400V
Drain current: 0.17A
On-state resistance: 25Ω
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 0.17A; 1.8W; SOT223
Mounting: SMD
Case: SOT223
Drain-source voltage: 400V
Drain current: 0.17A
On-state resistance: 25Ω
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 300 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
75+ | 0.96 EUR |
100+ | 0.72 EUR |
113+ | 0.63 EUR |
155+ | 0.46 EUR |
163+ | 0.44 EUR |
500+ | 0.42 EUR |
BSP372NH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
BSP372NH6327XTSA1 SMD N channel transistors
BSP372NH6327XTSA1 SMD N channel transistors
auf Bestellung 521 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
61+ | 1.18 EUR |
141+ | 0.51 EUR |
148+ | 0.48 EUR |
BSP373NH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.8A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.8A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1920 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
46+ | 1.56 EUR |
97+ | 0.74 EUR |
106+ | 0.67 EUR |
139+ | 0.52 EUR |
147+ | 0.49 EUR |
5000+ | 0.48 EUR |
BSP452 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 0.16Ω
Technology: Classic PROFET
Output voltage: 40V
Anzahl je Verpackung: 1 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 0.16Ω
Technology: Classic PROFET
Output voltage: 40V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2770 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
18+ | 4.08 EUR |
27+ | 2.72 EUR |
44+ | 1.66 EUR |
46+ | 1.57 EUR |
2000+ | 1.5 EUR |
BSP50H6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
BSP50H6327XTSA1 NPN SMD Darlington transistors
BSP50H6327XTSA1 NPN SMD Darlington transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSP603S2L |
Hersteller: INFINEON TECHNOLOGIES
BSP603S2L SMD N channel transistors
BSP603S2L SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSP613PH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.9A; 1.8W; PG-SOT223
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.9A
On-state resistance: 0.13Ω
Power dissipation: 1.8W
Case: PG-SOT223
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.9A; 1.8W; PG-SOT223
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.9A
On-state resistance: 0.13Ω
Power dissipation: 1.8W
Case: PG-SOT223
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 998 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
41+ | 1.74 EUR |
96+ | 0.75 EUR |
BSP61H6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
BSP61H6327XTSA1 PNP SMD Darlington transistors
BSP61H6327XTSA1 PNP SMD Darlington transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSP742R |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.25Ω
Technology: Classic PROFET
Output voltage: 40V
Anzahl je Verpackung: 1 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.25Ω
Technology: Classic PROFET
Output voltage: 40V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1749 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
22+ | 3.39 EUR |
33+ | 2.22 EUR |
55+ | 1.32 EUR |
58+ | 1.24 EUR |
2500+ | 1.2 EUR |
BSP742RIXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; SO8; reel
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.25Ω
Kind of package: reel
Technology: Classic PROFET
Anzahl je Verpackung: 2500 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; SO8; reel
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.25Ω
Kind of package: reel
Technology: Classic PROFET
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSP742T |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 800mA; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.26Ω
Output voltage: 40V
Technology: Classic PROFET
Anzahl je Verpackung: 1 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 800mA; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.26Ω
Output voltage: 40V
Technology: Classic PROFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1640 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
23+ | 3.22 EUR |
35+ | 2.09 EUR |
50+ | 1.43 EUR |
53+ | 1.36 EUR |
500+ | 1.3 EUR |
BSP752R |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.15Ω
Output voltage: 52V
Technology: Classic PROFET
Anzahl je Verpackung: 1 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.15Ω
Output voltage: 52V
Technology: Classic PROFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2674 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
19+ | 3.86 EUR |
29+ | 2.55 EUR |
43+ | 1.67 EUR |
46+ | 1.57 EUR |
1000+ | 1.52 EUR |
BSP752T |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Case: SO8
On-state resistance: 0.15Ω
Output voltage: 52V
Output current: 1.3A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Technology: Classic PROFET
Kind of integrated circuit: high-side
Mounting: SMD
Anzahl je Verpackung: 2500 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Case: SO8
On-state resistance: 0.15Ω
Output voltage: 52V
Output current: 1.3A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Technology: Classic PROFET
Kind of integrated circuit: high-side
Mounting: SMD
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSP752TXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
BSP752TXUMA1 Power switches - integrated circuits
BSP752TXUMA1 Power switches - integrated circuits
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSP762T |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Output current: 2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 70mΩ
Output voltage: 40V
Technology: Classic PROFET
Kind of integrated circuit: high-side
Anzahl je Verpackung: 1 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Output current: 2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 70mΩ
Output voltage: 40V
Technology: Classic PROFET
Kind of integrated circuit: high-side
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2439 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
18+ | 4.2 EUR |
41+ | 1.77 EUR |
43+ | 1.67 EUR |
1000+ | 1.63 EUR |
2500+ | 1.62 EUR |
BSP76E6433 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.4A; Ch: 1; N-Channel; SMD; PG-SOT223-4
Mounting: SMD
Technology: HITFET®
Kind of integrated circuit: low-side
Kind of output: N-Channel
Case: PG-SOT223-4
Type of integrated circuit: power switch
Number of channels: 1
Output current: 1.4A
Output voltage: 42V
Anzahl je Verpackung: 1 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.4A; Ch: 1; N-Channel; SMD; PG-SOT223-4
Mounting: SMD
Technology: HITFET®
Kind of integrated circuit: low-side
Kind of output: N-Channel
Case: PG-SOT223-4
Type of integrated circuit: power switch
Number of channels: 1
Output current: 1.4A
Output voltage: 42V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2301 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
37+ | 1.97 EUR |
50+ | 1.43 EUR |
69+ | 1.04 EUR |
73+ | 0.99 EUR |
BSP772T |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.6A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 50mΩ
Supply voltage: 5...34V DC
Technology: Classic PROFET
Anzahl je Verpackung: 1 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.6A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 50mΩ
Supply voltage: 5...34V DC
Technology: Classic PROFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1673 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
16+ | 4.53 EUR |
32+ | 2.25 EUR |
34+ | 2.12 EUR |
500+ | 2.04 EUR |
BSP77E6433 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2.17A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2.17A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 70mΩ
Technology: HITFET®
Output voltage: 42V
Anzahl je Verpackung: 1 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2.17A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2.17A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 70mΩ
Technology: HITFET®
Output voltage: 42V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3057 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
23+ | 3.23 EUR |
35+ | 2.09 EUR |
62+ | 1.16 EUR |
65+ | 1.1 EUR |
2000+ | 1.06 EUR |
BSP78 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 35mΩ
Technology: HITFET®
Output voltage: 42V
Anzahl je Verpackung: 1 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 35mΩ
Technology: HITFET®
Output voltage: 42V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2569 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
21+ | 3.47 EUR |
32+ | 2.27 EUR |
53+ | 1.37 EUR |
55+ | 1.3 EUR |
1000+ | 1.27 EUR |
2000+ | 1.26 EUR |
BSP88H6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
BSP88H6327XTSA1 SMD N channel transistors
BSP88H6327XTSA1 SMD N channel transistors
auf Bestellung 343 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
93+ | 0.78 EUR |
203+ | 0.35 EUR |
214+ | 0.33 EUR |
BSP89H6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.35A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.35A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.35A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.35A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 428 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
105+ | 0.69 EUR |
143+ | 0.5 EUR |
168+ | 0.43 EUR |
196+ | 0.37 EUR |
207+ | 0.35 EUR |
500+ | 0.33 EUR |
BSP92PH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.26A; 1.8W; PG-SOT223
Drain-source voltage: -250V
Drain current: -0.26A
On-state resistance: 12Ω
Type of transistor: P-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-SOT223
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.26A; 1.8W; PG-SOT223
Drain-source voltage: -250V
Drain current: -0.26A
On-state resistance: 12Ω
Type of transistor: P-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-SOT223
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2907 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
87+ | 0.83 EUR |
129+ | 0.55 EUR |
168+ | 0.43 EUR |
275+ | 0.26 EUR |
291+ | 0.25 EUR |
3000+ | 0.24 EUR |
BSR202NL6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.8A; 0.5W; SC59
Case: SC59
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
On-state resistance: 21mΩ
Power dissipation: 0.5W
Drain current: 3.8A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.8A; 0.5W; SC59
Case: SC59
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
On-state resistance: 21mΩ
Power dissipation: 0.5W
Drain current: 3.8A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2763 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
105+ | 0.69 EUR |
138+ | 0.52 EUR |
183+ | 0.39 EUR |
258+ | 0.28 EUR |
274+ | 0.26 EUR |
1000+ | 0.25 EUR |
BSR302NL6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.7A; 0.5W; SC59
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
On-state resistance: 36mΩ
Power dissipation: 0.5W
Drain current: 3.7A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Case: SC59
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.7A; 0.5W; SC59
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
On-state resistance: 36mΩ
Power dissipation: 0.5W
Drain current: 3.7A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Case: SC59
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSR315PH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.49A; 0.5W; SC59
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.49A
Power dissipation: 0.5W
Case: SC59
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.49A; 0.5W; SC59
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.49A
Power dissipation: 0.5W
Case: SC59
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2400 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
125+ | 0.57 EUR |
179+ | 0.4 EUR |
221+ | 0.32 EUR |
341+ | 0.21 EUR |
360+ | 0.2 EUR |
1000+ | 0.19 EUR |
BSR316PH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.29A; 0.5W; SC59
Drain-source voltage: -100V
Drain current: -0.29A
On-state resistance: 2.2Ω
Type of transistor: P-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SC59
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.29A; 0.5W; SC59
Drain-source voltage: -100V
Drain current: -0.29A
On-state resistance: 2.2Ω
Type of transistor: P-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SC59
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1178 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
125+ | 0.57 EUR |
168+ | 0.43 EUR |
207+ | 0.35 EUR |
261+ | 0.27 EUR |
275+ | 0.26 EUR |
BSR802NL6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
BSR802NL6327HTSA1 SMD N channel transistors
BSR802NL6327HTSA1 SMD N channel transistors
auf Bestellung 423 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
100+ | 0.72 EUR |
291+ | 0.25 EUR |
309+ | 0.23 EUR |
3000+ | 0.22 EUR |
BSR92PH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.11A; 0.5W; SC59
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -0.11A
Power dissipation: 0.5W
Case: SC59
Gate-source voltage: ±20V
On-state resistance: 20Ω
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.11A; 0.5W; SC59
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -0.11A
Power dissipation: 0.5W
Case: SC59
Gate-source voltage: ±20V
On-state resistance: 20Ω
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1888 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
99+ | 0.73 EUR |
133+ | 0.54 EUR |
182+ | 0.39 EUR |
338+ | 0.21 EUR |
358+ | 0.2 EUR |
3000+ | 0.19 EUR |
BSS119NH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.19A; 0.5W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.19A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.19A; 0.5W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.19A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4289 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
218+ | 0.33 EUR |
281+ | 0.25 EUR |
332+ | 0.22 EUR |
506+ | 0.14 EUR |
603+ | 0.12 EUR |
725+ | 0.099 EUR |
770+ | 0.093 EUR |
BSS123IXTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™
Gate charge: 0.63nC
Drain current: 0.15A
Power dissipation: 0.5W
Pulsed drain current: 0.77A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™
Gate charge: 0.63nC
Drain current: 0.15A
Power dissipation: 0.5W
Pulsed drain current: 0.77A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1666 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
295+ | 0.24 EUR |
374+ | 0.19 EUR |
447+ | 0.16 EUR |
779+ | 0.092 EUR |
989+ | 0.072 EUR |
1534+ | 0.047 EUR |
1624+ | 0.044 EUR |
BSS123NH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™
Gate charge: 0.6nC
Drain current: 0.15A
Power dissipation: 0.5W
Pulsed drain current: 0.77A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™
Gate charge: 0.6nC
Drain current: 0.15A
Power dissipation: 0.5W
Pulsed drain current: 0.77A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 23474 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
417+ | 0.17 EUR |
521+ | 0.14 EUR |
575+ | 0.12 EUR |
822+ | 0.087 EUR |
1194+ | 0.06 EUR |
1263+ | 0.057 EUR |
BSS123NH6433XTMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™
Gate charge: 0.6nC
Drain current: 0.15A
Power dissipation: 0.5W
Pulsed drain current: 0.77A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™
Gate charge: 0.6nC
Drain current: 0.15A
Power dissipation: 0.5W
Pulsed drain current: 0.77A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1973 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
209+ | 0.34 EUR |
275+ | 0.26 EUR |
323+ | 0.22 EUR |
505+ | 0.14 EUR |
610+ | 0.12 EUR |
1247+ | 0.057 EUR |
1320+ | 0.054 EUR |
BSS126H6327XTSA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.021A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Technology: SIPMOS™
Drain current: 21mA
Power dissipation: 0.5W
On-state resistance: 700Ω
Gate-source voltage: ±20V
Drain-source voltage: 600V
Polarisation: unipolar
Kind of channel: depletion
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.021A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Technology: SIPMOS™
Drain current: 21mA
Power dissipation: 0.5W
On-state resistance: 700Ω
Gate-source voltage: ±20V
Drain-source voltage: 600V
Polarisation: unipolar
Kind of channel: depletion
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2461 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
107+ | 0.67 EUR |
136+ | 0.53 EUR |
154+ | 0.47 EUR |
275+ | 0.26 EUR |
291+ | 0.25 EUR |
295+ | 0.24 EUR |
BSS127H6327XTSA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.021A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Technology: SIPMOS™
Drain current: 21mA
Power dissipation: 0.5W
On-state resistance: 500Ω
Gate-source voltage: ±20V
Drain-source voltage: 600V
Polarisation: unipolar
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.021A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Technology: SIPMOS™
Drain current: 21mA
Power dissipation: 0.5W
On-state resistance: 500Ω
Gate-source voltage: ±20V
Drain-source voltage: 600V
Polarisation: unipolar
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3361 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.4 EUR |
250+ | 0.29 EUR |
304+ | 0.24 EUR |
353+ | 0.2 EUR |
407+ | 0.18 EUR |
603+ | 0.12 EUR |
642+ | 0.11 EUR |
BSS131H6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.1A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.1A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.1A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.1A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6695 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
313+ | 0.23 EUR |
468+ | 0.15 EUR |
554+ | 0.13 EUR |
625+ | 0.11 EUR |
703+ | 0.1 EUR |
946+ | 0.076 EUR |
1000+ | 0.072 EUR |
BSS138NH6327XTSA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.36W; SOT23
Kind of channel: enhancement
Technology: SIPMOS™
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: SOT23
Mounting: SMD
Drain current: 0.23A
Power dissipation: 0.36W
On-state resistance: 3.5Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.36W; SOT23
Kind of channel: enhancement
Technology: SIPMOS™
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: SOT23
Mounting: SMD
Drain current: 0.23A
Power dissipation: 0.36W
On-state resistance: 3.5Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1141 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
295+ | 0.24 EUR |
407+ | 0.18 EUR |
583+ | 0.12 EUR |
684+ | 0.1 EUR |
1141+ | 0.063 EUR |
BSS138NH6433XTMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SIPMOS®; unipolar; 60V; 180mA; Idm: 0.92A
Kind of channel: enhancement
Technology: SIPMOS®
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: SOT23
Mounting: SMD
Drain current: 0.18A
Power dissipation: 0.36W
Pulsed drain current: 0.92A
On-state resistance: 3.5Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Anzahl je Verpackung: 10000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SIPMOS®; unipolar; 60V; 180mA; Idm: 0.92A
Kind of channel: enhancement
Technology: SIPMOS®
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: SOT23
Mounting: SMD
Drain current: 0.18A
Power dissipation: 0.36W
Pulsed drain current: 0.92A
On-state resistance: 3.5Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSS138WH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.28A; 0.5W; SOT323
Kind of channel: enhancement
Technology: SIPMOS™
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: SOT323
Mounting: SMD
Drain current: 0.28A
Power dissipation: 0.5W
On-state resistance: 3.5Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.28A; 0.5W; SOT323
Kind of channel: enhancement
Technology: SIPMOS™
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: SOT323
Mounting: SMD
Drain current: 0.28A
Power dissipation: 0.5W
On-state resistance: 3.5Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2273 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
385+ | 0.19 EUR |
556+ | 0.13 EUR |
642+ | 0.11 EUR |
851+ | 0.084 EUR |
946+ | 0.076 EUR |
1247+ | 0.057 EUR |
1316+ | 0.054 EUR |
BSS138WH6433XTMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SIPMOS®; unipolar; 60V; 220mA; Idm: 1.12A
Kind of channel: enhancement
Technology: SIPMOS®
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: SOT323
Mounting: SMD
Drain current: 0.22A
Power dissipation: 0.5W
Pulsed drain current: 1.12A
On-state resistance: 3.5Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Anzahl je Verpackung: 10000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SIPMOS®; unipolar; 60V; 220mA; Idm: 1.12A
Kind of channel: enhancement
Technology: SIPMOS®
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: SOT323
Mounting: SMD
Drain current: 0.22A
Power dissipation: 0.5W
Pulsed drain current: 1.12A
On-state resistance: 3.5Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSS139H6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.1A; 0.36W; SOT23
Type of transistor: N-MOSFET
Case: SOT23
Drain-source voltage: 250V
Drain current: 0.1A
On-state resistance: 30Ω
Mounting: SMD
Power dissipation: 0.36W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: depletion
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.1A; 0.36W; SOT23
Type of transistor: N-MOSFET
Case: SOT23
Drain-source voltage: 250V
Drain current: 0.1A
On-state resistance: 30Ω
Mounting: SMD
Power dissipation: 0.36W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: depletion
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSS159NH6327XTSA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.36W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.23A
Power dissipation: 0.36W
Case: SOT23
On-state resistance: 8Ω
Mounting: SMD
Kind of channel: depletion
Technology: SIPMOS™
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.36W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.23A
Power dissipation: 0.36W
Case: SOT23
On-state resistance: 8Ω
Mounting: SMD
Kind of channel: depletion
Technology: SIPMOS™
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1422 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
129+ | 0.56 EUR |
183+ | 0.39 EUR |
236+ | 0.3 EUR |
291+ | 0.25 EUR |
417+ | 0.17 EUR |
439+ | 0.16 EUR |
BSS169H6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.36W; SOT23
Case: SOT23
Mounting: SMD
Technology: SIPMOS™
Polarisation: unipolar
Drain current: 0.17A
Power dissipation: 0.36W
On-state resistance: 12Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Kind of channel: depletion
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.36W; SOT23
Case: SOT23
Mounting: SMD
Technology: SIPMOS™
Polarisation: unipolar
Drain current: 0.17A
Power dissipation: 0.36W
On-state resistance: 12Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Kind of channel: depletion
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3030 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
143+ | 0.5 EUR |
172+ | 0.42 EUR |
191+ | 0.38 EUR |
247+ | 0.29 EUR |
277+ | 0.26 EUR |
500+ | 0.14 EUR |
BSS192PH6327FTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.19A; 1W; PG-SOT89
Drain-source voltage: -250V
Drain current: -0.19A
On-state resistance: 12Ω
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-SOT89
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.19A; 1W; PG-SOT89
Drain-source voltage: -250V
Drain current: -0.19A
On-state resistance: 12Ω
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-SOT89
Anzahl je Verpackung: 1 Stücke
auf Bestellung 620 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
103+ | 0.7 EUR |
133+ | 0.54 EUR |
176+ | 0.41 EUR |
296+ | 0.24 EUR |
313+ | 0.23 EUR |
3000+ | 0.22 EUR |
BSS205NH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
BSS205NH6327XTSA1 SMD N channel transistors
BSS205NH6327XTSA1 SMD N channel transistors
auf Bestellung 6013 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
194+ | 0.37 EUR |
910+ | 0.079 EUR |
962+ | 0.074 EUR |
BSS209PWH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.63A; 0.3W; PG-SOT-323
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.63A
Power dissipation: 0.3W
Case: PG-SOT-323
Gate-source voltage: ±12V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.63A; 0.3W; PG-SOT-323
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.63A
Power dissipation: 0.3W
Case: PG-SOT-323
Gate-source voltage: ±12V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3699 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
295+ | 0.24 EUR |
397+ | 0.18 EUR |
549+ | 0.13 EUR |
633+ | 0.11 EUR |
1071+ | 0.067 EUR |
1132+ | 0.063 EUR |
2500+ | 0.062 EUR |
BSS214NH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT23
Mounting: SMD
Technology: OptiMOS™ 2
Kind of channel: enhancement
Gate-source voltage: ±12V
Case: SOT23
Drain-source voltage: 20V
Drain current: 1.5A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT23
Mounting: SMD
Technology: OptiMOS™ 2
Kind of channel: enhancement
Gate-source voltage: ±12V
Case: SOT23
Drain-source voltage: 20V
Drain current: 1.5A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5227 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
173+ | 0.41 EUR |
264+ | 0.27 EUR |
429+ | 0.17 EUR |
484+ | 0.15 EUR |
832+ | 0.086 EUR |
881+ | 0.081 EUR |
BSS214NWH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT323
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.5A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT323
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.5A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3381 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
455+ | 0.16 EUR |
550+ | 0.13 EUR |
881+ | 0.081 EUR |
1069+ | 0.067 EUR |
1397+ | 0.051 EUR |
1475+ | 0.048 EUR |
BSS215PH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.5A; 0.5W; PG-SOT23
Mounting: SMD
Technology: OptiMOS™ P2
Kind of channel: enhancement
Gate-source voltage: ±12V
Case: PG-SOT23
Drain-source voltage: -20V
Drain current: -1.5A
On-state resistance: 0.15Ω
Type of transistor: P-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.5A; 0.5W; PG-SOT23
Mounting: SMD
Technology: OptiMOS™ P2
Kind of channel: enhancement
Gate-source voltage: ±12V
Case: PG-SOT23
Drain-source voltage: -20V
Drain current: -1.5A
On-state resistance: 0.15Ω
Type of transistor: P-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1628 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
173+ | 0.41 EUR |
242+ | 0.3 EUR |
348+ | 0.21 EUR |
432+ | 0.17 EUR |
511+ | 0.14 EUR |
715+ | 0.1 EUR |
758+ | 0.094 EUR |
BSS223PWH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.39A; 0.25W; PG-SOT-323
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.39A
Power dissipation: 0.25W
Case: PG-SOT-323
Gate-source voltage: ±12V
On-state resistance: 1.2Ω
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.39A; 0.25W; PG-SOT-323
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.39A
Power dissipation: 0.25W
Case: PG-SOT-323
Gate-source voltage: ±12V
On-state resistance: 1.2Ω
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1265 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
250+ | 0.29 EUR |
379+ | 0.19 EUR |
479+ | 0.15 EUR |
579+ | 0.12 EUR |
693+ | 0.1 EUR |
958+ | 0.075 EUR |
1053+ | 0.068 EUR |
BSS225H6327FTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.09A; 1W; SOT89
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.09A
Power dissipation: 1W
Case: SOT89
Gate-source voltage: ±20V
On-state resistance: 45Ω
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.09A; 1W; SOT89
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.09A
Power dissipation: 1W
Case: SOT89
Gate-source voltage: ±20V
On-state resistance: 45Ω
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 522 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
122+ | 0.59 EUR |
138+ | 0.52 EUR |
145+ | 0.49 EUR |
209+ | 0.34 EUR |
221+ | 0.32 EUR |
BSS306NH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
BSS306NH6327XTSA1 SMD N channel transistors
BSS306NH6327XTSA1 SMD N channel transistors
auf Bestellung 6915 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
162+ | 0.44 EUR |
725+ | 0.099 EUR |
770+ | 0.093 EUR |
75000+ | 0.092 EUR |
BSS308PEH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
BSS308PEH6327XTSA1 SMD P channel transistors
BSS308PEH6327XTSA1 SMD P channel transistors
auf Bestellung 5645 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
147+ | 0.49 EUR |
725+ | 0.099 EUR |
770+ | 0.093 EUR |
BSS314PEH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
BSS314PEH6327XTSA1 SMD P channel transistors
BSS314PEH6327XTSA1 SMD P channel transistors
auf Bestellung 8017 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
191+ | 0.37 EUR |
911+ | 0.079 EUR |
964+ | 0.074 EUR |