Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (149712) > Seite 1260 nach 2496
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| IRLB8314PBF | Infineon Technologies |
N-кан. MOSFET 30V, 184А, 125W, TO-220-3 |
auf Bestellung 75 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| IRLML0030TRPBF | Infineon Technologies |
MOSFET N-CH 30V 5.3A SOT-23 |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| IRLML0040TRPBF | Infineon Technologies |
MOSFET N-CH 40V 3.6A SOT-23-3 |
auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| IRLML2244TRPBF | Infineon Technologies |
SOT-23 |
auf Bestellung 40 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| IRLML2402TRPBF | Infineon Technologies |
MOSFET N-CH 20V 1.2A SOT-23 |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| IRLML2502TRPBF | Infineon Technologies |
N-Channel 20V 4.2A 1.25W SOT-23 |
auf Bestellung 55 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| IRLML5203TR | Infineon Technologies | MOSFET P-CH 30V 3A SOT-23 |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| IRLML6302PBF | Infineon Technologies | MOSFET P-CH 20V 780mA SOT-23 |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| IRLML6346TRPBF | Infineon Technologies |
N-MOSFET, 30В, 2,7А. Idm: 17А, 0,8А, SOT-23-3 |
auf Bestellung 150 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| IRLML6401TRPBF | Infineon Technologies |
MOSFET P-CH 12V 4.3A SOT-23 |
auf Bestellung 145 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| IRLR2905ZTRPBF | Infineon Technologies |
MOSFET N-CH 55V 43A DPAK |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| IRLR3636TRPBF | Infineon Technologies |
(MFET,N-CH,60V,50A,DPAK) |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| IRLR8721TRPBF | Infineon Technologies |
MOSFET N-CH 30V 65A DPAK (TO-252-3) |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| IRLTS2242TRPBF | Infineon Technologies |
MOSFET P-CH 20V 6.9A 6TSOP |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| IRLZ44NSTRLPBF | Infineon Technologies |
MOSFET N-CH 55V 47A TO-263-3 (D2PAK) |
auf Bestellung 200 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| SPW20N60C3 | Infineon Technologies |
N-Channel 650V 20.7A (Tc) 208W (Tc) Through Hole PG-TO247-3 |
auf Bestellung 52 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| SPW47N60C3 | Infineon Technologies | MOSFET N-кан, 650 В, 47 А, TO-247 |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| IRF7342TRPBF | Infineon Technologies |
MOSFET 2P-CH 55V 3.4A 8SO |
auf Bestellung 60 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| IKW40N60DT | Infineon Technologies | Trans IGBT Chip N-CH 600V 80A 306mW TO-247 |
auf Bestellung 90 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| IKW40N60H3 | Infineon Technologies |
IGBT 600V 80A 306.0W TO247-3 |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| IKW50N65F5 | Infineon Technologies |
IGBT 650V 80A 305W PG-TO247-3 |
auf Bestellung 42 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| IKW75N60T | Infineon Technologies |
IGBTs - Single, 600V, 80A, TO-247-3 |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| SGP15N120XKSA1 | Infineon Technologies |
IGBT 1200V 30A 198W TO220-3 |
auf Bestellung 293 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| BFR181WH6327 | Infineon Technologies | RF TRANS NPN 12V 8GHZ SOT323-3 |
auf Bestellung 2400 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| BFS17WH6327XTSA1 | Infineon Technologies |
RF TRANS NPN 15V 1.4GHZ SOT-323 |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FS50R06W1E3 | Infineon Technologies | 600 V, 50 A sixpack IGBT module |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FM25V05-G | Infineon Technologies |
FRAM, 512Kb, SPI, - 40 C to + 85 C, SOIC8 |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| BTS432D2 E3062A | Infineon Technologies | ИС переключателя для электропитания TO-220AB/5 |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| ITS4100S-SJ-N | Infineon Technologies |
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auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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1ED020I12F2XUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A Type of integrated circuit: driver Kind of integrated circuit: high-side; IGBT gate driver Output current: -2...2A Mounting: SMD Number of channels: 1 Case: PG-DSO-16-15 Supply voltage: 0...28V; 4.5...5.5V Kind of package: reel; tape Integrated circuit features: active Miller clamp; galvanically isolated Voltage class: 0.6/1.2kV Technology: EiceDRIVER™ Topology: single transistor Protection: undervoltage UVP Anzahl je Verpackung: 1 Stücke |
auf Bestellung 986 Stücke: Lieferzeit 7-14 Tag (e) |
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1EDC10I12MHXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; single transistor; high-side,IGBT gate driver; -1÷1A Type of integrated circuit: driver Kind of integrated circuit: high-side; IGBT gate driver Output current: -1...1A Mounting: SMD Number of channels: 1 Case: PG-DSO-8 Supply voltage: 3.1...17V; 13...18V Kind of package: reel; tape Integrated circuit features: active Miller clamp; galvanically isolated Voltage class: 600/650/1200V Technology: EiceDRIVER™ Topology: single transistor Anzahl je Verpackung: 1 Stücke |
auf Bestellung 22 Stücke: Lieferzeit 7-14 Tag (e) |
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1EDC30I12MHXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; single transistor; high-side,IGBT gate driver; -3÷3A Type of integrated circuit: driver Kind of integrated circuit: high-side; IGBT gate driver Output current: -3...3A Mounting: SMD Number of channels: 1 Case: PG-DSO-8 Supply voltage: 3.1...17V; 13...18V Kind of package: reel; tape Integrated circuit features: active Miller clamp; galvanically isolated Voltage class: 600/650/1200V Technology: EiceDRIVER™ Topology: single transistor Anzahl je Verpackung: 1 Stücke |
auf Bestellung 998 Stücke: Lieferzeit 7-14 Tag (e) |
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1EDC60I12AHXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; single transistor; high-side,IGBT gate driver; -6÷6A Type of integrated circuit: driver Kind of integrated circuit: high-side; IGBT gate driver Output current: -6...6A Mounting: SMD Number of channels: 1 Case: PG-DSO-8 Supply voltage: 3.1...17V; 13...35V Kind of package: reel; tape Integrated circuit features: galvanically isolated Voltage class: 600/650/1200V Technology: EiceDRIVER™ Topology: single transistor Anzahl je Verpackung: 1 Stücke |
auf Bestellung 603 Stücke: Lieferzeit 7-14 Tag (e) |
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1EDI05I12AFXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; single transistor; high-side,IGBT gate driver; Ch: 1 Type of integrated circuit: driver Kind of integrated circuit: high-side; IGBT gate driver Output current: -0.5...0.5A Mounting: SMD Number of channels: 1 Case: PG-DSO-8 Supply voltage: 3.1...17V; 13...35V Kind of package: reel; tape Integrated circuit features: galvanically isolated Voltage class: 1.2kV Technology: EiceDRIVER™ Topology: single transistor Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2091 Stücke: Lieferzeit 7-14 Tag (e) |
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1EDN7512BXTSA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; single transistor; low-side,gate driver; EiceDRIVER™ Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: gate driver; low-side Technology: EiceDRIVER™ Case: PG-SOT23-5 Output current: -8...4A Number of channels: 1 Mounting: SMD Kind of package: reel; tape Supply voltage: 4.5...20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1797 Stücke: Lieferzeit 7-14 Tag (e) |
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1EDN7550BXTSA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; single transistor; low-side,gate driver; EiceDRIVER™ Kind of package: reel; tape Type of integrated circuit: driver Technology: EiceDRIVER™ Mounting: SMD Kind of integrated circuit: gate driver; low-side Case: PG-SOT23-6 Topology: single transistor Output current: -8...4A Number of channels: 1 Supply voltage: 4.5...20V Voltage class: 80V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1370 Stücke: Lieferzeit 7-14 Tag (e) |
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2ED020I12-FI | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; IGBT half-bridge; high-side,IGBT gate driver; -2÷1A Type of integrated circuit: driver Kind of integrated circuit: high-side; IGBT gate driver Output current: -2...1A Mounting: SMD Number of channels: 2 Case: PG-DSO-18 Supply voltage: 0...5V; 14...18V Kind of package: reel; tape Integrated circuit features: built-in comparator; built-in operational amplifier; integrated bootstrap functionality Voltage class: 1.2kV Technology: EiceDRIVER™ Topology: IGBT half-bridge Protection: undervoltage UVP Anzahl je Verpackung: 1 Stücke |
auf Bestellung 374 Stücke: Lieferzeit 7-14 Tag (e) |
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2EDL05N06PFXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; EiceDRIVER™; PG-DSO-8; -0.7÷0.36A Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: high-/low-side; MOSFET gate driver Case: PG-DSO-8 Output current: -0.7...0.36A Number of channels: 2 Supply voltage: 10...20V Mounting: SMD Kind of package: reel; tape Voltage class: 600V Integrated circuit features: integrated bootstrap functionality Technology: EiceDRIVER™ Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1254 Stücke: Lieferzeit 7-14 Tag (e) |
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2EDN7524FXTMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; low-side,gate driver; PG-DSO-8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; low-side Technology: EiceDRIVER™ Case: PG-DSO-8 Output current: -5...5A Number of channels: 2 Mounting: SMD Kind of package: reel; tape Supply voltage: 4.5...20V Voltage class: 20V Protection: undervoltage UVP Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1382 Stücke: Lieferzeit 7-14 Tag (e) |
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2EDN8524FXTMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; low-side,gate driver; PG-DSO-8 Case: PG-DSO-8 Technology: EiceDRIVER™ Kind of package: reel; tape Output current: -5...5A Number of channels: 2 Supply voltage: 4.5...20V Voltage class: 20V Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; low-side Mounting: SMD Protection: undervoltage UVP Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2495 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7002DWH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 60V; 0.3A; 0.5W; PG-SOT-363 Type of transistor: N-MOSFET x2 Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.3A Power dissipation: 0.5W Case: PG-SOT-363 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5065 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7002H6327XTSA2 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.5W; PG-SOT23 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.3A Power dissipation: 0.5W Case: PG-SOT23 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5757 Stücke: Lieferzeit 7-14 Tag (e) |
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AIGW40N65F5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 46A; 125W; TO247-3; F5 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 46A Power dissipation: 125W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 95nC Kind of package: tube Turn-on time: 30ns Technology: TRENCHSTOP™ 5 Manufacturer series: F5 Turn-off time: 178ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 177 Stücke: Lieferzeit 7-14 Tag (e) |
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AIGW40N65H5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 46A; 125W; TO247-3; H5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 46A Power dissipation: 125W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Kind of package: tube Manufacturer series: H5 Turn-off time: 160ns Gate charge: 92nC Turn-on time: 31ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 161 Stücke: Lieferzeit 7-14 Tag (e) |
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AIKP20N60CTAKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 20A; 156W; TO220-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 156W Case: TO220-3 Mounting: THT Kind of package: tube Collector-emitter voltage: 600V Features of semiconductor devices: integrated anti-parallel diode Gate charge: 0.12µC Turn-on time: 32ns Turn-off time: 241ns Collector current: 20A Gate-emitter voltage: ±20V Pulsed collector current: 60A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 304 Stücke: Lieferzeit 7-14 Tag (e) |
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AUIRFB8405 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 120A; 163W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Power dissipation: 163W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 2.1mΩ Mounting: THT Gate charge: 107nC Kind of package: tube Kind of channel: enhancement Technology: HEXFET® Anzahl je Verpackung: 1 Stücke |
auf Bestellung 7 Stücke: Lieferzeit 7-14 Tag (e) |
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| AUIRGSL4062D1 | INFINEON TECHNOLOGIES |
AUIRGSL4062D1 THT IGBT transistors |
auf Bestellung 5 Stücke: Lieferzeit 7-14 Tag (e) |
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BA592E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - othersDescription: Diode: switching; 35V; 100mA; SOD323; single diode; reel,tape Type of diode: switching Max. off-state voltage: 35V Load current: 0.1A Case: SOD323 Mounting: SMD Semiconductor structure: single diode Features of semiconductor devices: PIN; RF Kind of package: reel; tape Leakage current: 20nA Capacitance: 0.6...1.4pF Anzahl je Verpackung: 5 Stücke |
auf Bestellung 2470 Stücke: Lieferzeit 7-14 Tag (e) |
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BA592E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - othersDescription: Diode: switching; 35V; 100mA; SOD323; single diode; reel,tape Type of diode: switching Max. off-state voltage: 35V Load current: 0.1A Case: SOD323 Mounting: SMD Semiconductor structure: single diode Features of semiconductor devices: PIN; RF Kind of package: reel; tape Leakage current: 20nA Capacitance: 0.6...1.4pF Anzahl je Verpackung: 5 Stücke |
auf Bestellung 2470 Stücke: Lieferzeit 7-14 Tag (e) |
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BA885E6327 | INFINEON TECHNOLOGIES |
Category: Diodes - othersDescription: Diode: switching; 50V; 50mA; SOT23; single diode; reel,tape Max. off-state voltage: 50V Load current: 50mA Case: SOT23 Kind of package: reel; tape Capacitance: 0.19...0.45pF Leakage current: 20nA Semiconductor structure: single diode Features of semiconductor devices: PIN; RF Mounting: SMD Type of diode: switching Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1201 Stücke: Lieferzeit 7-14 Tag (e) |
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BA89202VH6127XTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - othersDescription: Diode: switching; 35V; 100mA; SC79; single diode; 120ns; Ufmax: 1V Max. off-state voltage: 35V Load current: 0.1A Case: SC79 Kind of package: reel; tape Max. forward voltage: 1V Capacitance: 0.6...1.4pF Leakage current: 20nA Reverse recovery time: 120ns Semiconductor structure: single diode Features of semiconductor devices: PIN; RF Mounting: SMD Type of diode: switching Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2272 Stücke: Lieferzeit 7-14 Tag (e) |
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BAR6302VH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - othersDescription: Diode: switching; 50V; 100mA; 250mW; SC79; single diode; Ufmax: 1.2V Max. off-state voltage: 50V Load current: 0.1A Case: SC79 Kind of package: reel; tape Max. forward voltage: 1.2V Power dissipation: 0.25W Semiconductor structure: single diode Features of semiconductor devices: PIN; RF Mounting: SMD Type of diode: switching Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5985 Stücke: Lieferzeit 7-14 Tag (e) |
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BAR6303WE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - othersDescription: Diode: switching; 50V; 100mA; 250mW; SOD323; single diode Max. off-state voltage: 50V Load current: 0.1A Case: SOD323 Kind of package: reel; tape Max. forward voltage: 1.2V Power dissipation: 0.25W Semiconductor structure: single diode Features of semiconductor devices: PIN; RF Mounting: SMD Type of diode: switching Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2144 Stücke: Lieferzeit 7-14 Tag (e) |
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BAR6402VH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - othersDescription: Diode: switching; 150V; 100mA; 250mW; SC79; single diode; reel,tape Mounting: SMD Features of semiconductor devices: PIN; RF Case: SC79 Type of diode: switching Semiconductor structure: single diode Load current: 0.1A Power dissipation: 0.25W Max. forward voltage: 1.1V Max. off-state voltage: 150V Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2000 Stücke: Lieferzeit 7-14 Tag (e) |
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BAR6405WH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - othersDescription: Diode: switching; 150V; 100mA; 250mW; SOT323; Ufmax: 1.1V; reel,tape Max. off-state voltage: 150V Load current: 0.1A Case: SOT323 Kind of package: reel; tape Max. forward voltage: 1.1V Power dissipation: 0.25W Semiconductor structure: common cathode; double Features of semiconductor devices: PIN; RF Mounting: SMD Type of diode: switching Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2465 Stücke: Lieferzeit 7-14 Tag (e) |
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BAR6402VH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - othersDescription: Diode: switching; 150V; 100mA; 250mW; SC79; single diode; reel,tape Mounting: SMD Features of semiconductor devices: PIN; RF Case: SC79 Type of diode: switching Semiconductor structure: single diode Load current: 0.1A Power dissipation: 0.25W Max. forward voltage: 1.1V Max. off-state voltage: 150V Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2000 Stücke: Lieferzeit 7-14 Tag (e) |
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BAR6403WE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - othersDescription: Diode: switching; 50V; 100mA; 250mW; SOD323; single diode Semiconductor structure: single diode Features of semiconductor devices: PIN; RF Kind of package: reel; tape Case: SOD323 Mounting: SMD Type of diode: switching Load current: 0.1A Power dissipation: 0.25W Max. forward voltage: 1.2V Max. off-state voltage: 50V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 525 Stücke: Lieferzeit 7-14 Tag (e) |
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BAR6404E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - othersDescription: Diode: switching; 150V; 100mA; 250mW; SOT23; double series Max. off-state voltage: 150V Load current: 0.1A Case: SOT23 Kind of package: reel; tape Max. forward voltage: 1.1V Power dissipation: 0.25W Semiconductor structure: double series Features of semiconductor devices: PIN; RF Mounting: SMD Type of diode: switching Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1473 Stücke: Lieferzeit 7-14 Tag (e) |
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BAR66E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - othersDescription: Diode: switching; 150V; 200mA; 250mW; SOT23; double series Max. off-state voltage: 150V Load current: 0.2A Max. forward impulse current: 12A Case: SOT23 Kind of package: reel; tape Max. forward voltage: 1.2V Power dissipation: 0.25W Semiconductor structure: double series Features of semiconductor devices: PIN Mounting: SMD Type of diode: switching Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4485 Stücke: Lieferzeit 7-14 Tag (e) |
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BAR81WH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - othersDescription: Diode: switching; 30V; 100mA; 100mW; SOT343; single diode; 80ns Power dissipation: 0.1W Case: SOT343 Mounting: SMD Load current: 0.1A Max. forward voltage: 1V Max. off-state voltage: 30V Semiconductor structure: single diode Kind of package: reel; tape Features of semiconductor devices: RF Type of diode: switching Reverse recovery time: 80ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 960 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRLB8314PBF |
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Hersteller: Infineon Technologies
N-кан. MOSFET 30V, 184А, 125W, TO-220-3
N-кан. MOSFET 30V, 184А, 125W, TO-220-3
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| IRLML0030TRPBF |
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Hersteller: Infineon Technologies
MOSFET N-CH 30V 5.3A SOT-23
MOSFET N-CH 30V 5.3A SOT-23
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| IRLML0040TRPBF |
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Hersteller: Infineon Technologies
MOSFET N-CH 40V 3.6A SOT-23-3
MOSFET N-CH 40V 3.6A SOT-23-3
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| IRLML2244TRPBF |
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Hersteller: Infineon Technologies
SOT-23
SOT-23
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| IRLML2402TRPBF |
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Hersteller: Infineon Technologies
MOSFET N-CH 20V 1.2A SOT-23
MOSFET N-CH 20V 1.2A SOT-23
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| IRLML2502TRPBF |
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Hersteller: Infineon Technologies
N-Channel 20V 4.2A 1.25W SOT-23
N-Channel 20V 4.2A 1.25W SOT-23
auf Bestellung 55 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| IRLML5203TR |
Hersteller: Infineon Technologies
MOSFET P-CH 30V 3A SOT-23
MOSFET P-CH 30V 3A SOT-23
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| IRLML6302PBF |
Hersteller: Infineon Technologies
MOSFET P-CH 20V 780mA SOT-23
MOSFET P-CH 20V 780mA SOT-23
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| IRLML6346TRPBF |
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Hersteller: Infineon Technologies
N-MOSFET, 30В, 2,7А. Idm: 17А, 0,8А, SOT-23-3
N-MOSFET, 30В, 2,7А. Idm: 17А, 0,8А, SOT-23-3
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| IRLML6401TRPBF |
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Hersteller: Infineon Technologies
MOSFET P-CH 12V 4.3A SOT-23
MOSFET P-CH 12V 4.3A SOT-23
auf Bestellung 145 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| IRLR2905ZTRPBF |
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Hersteller: Infineon Technologies
MOSFET N-CH 55V 43A DPAK
MOSFET N-CH 55V 43A DPAK
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| IRLR3636TRPBF |
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Hersteller: Infineon Technologies
(MFET,N-CH,60V,50A,DPAK)
(MFET,N-CH,60V,50A,DPAK)
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| IRLR8721TRPBF |
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Hersteller: Infineon Technologies
MOSFET N-CH 30V 65A DPAK (TO-252-3)
MOSFET N-CH 30V 65A DPAK (TO-252-3)
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| IRLTS2242TRPBF |
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Hersteller: Infineon Technologies
MOSFET P-CH 20V 6.9A 6TSOP
MOSFET P-CH 20V 6.9A 6TSOP
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| IRLZ44NSTRLPBF |
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Hersteller: Infineon Technologies
MOSFET N-CH 55V 47A TO-263-3 (D2PAK)
MOSFET N-CH 55V 47A TO-263-3 (D2PAK)
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| SPW20N60C3 |
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Hersteller: Infineon Technologies
N-Channel 650V 20.7A (Tc) 208W (Tc) Through Hole PG-TO247-3
N-Channel 650V 20.7A (Tc) 208W (Tc) Through Hole PG-TO247-3
auf Bestellung 52 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| SPW47N60C3 |
Hersteller: Infineon Technologies
MOSFET N-кан, 650 В, 47 А, TO-247
MOSFET N-кан, 650 В, 47 А, TO-247
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| IRF7342TRPBF |
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Hersteller: Infineon Technologies
MOSFET 2P-CH 55V 3.4A 8SO
MOSFET 2P-CH 55V 3.4A 8SO
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| IKW40N60DT |
Hersteller: Infineon Technologies
Trans IGBT Chip N-CH 600V 80A 306mW TO-247
Trans IGBT Chip N-CH 600V 80A 306mW TO-247
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| IKW40N60H3 |
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Hersteller: Infineon Technologies
IGBT 600V 80A 306.0W TO247-3
IGBT 600V 80A 306.0W TO247-3
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| IKW50N65F5 |
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Hersteller: Infineon Technologies
IGBT 650V 80A 305W PG-TO247-3
IGBT 650V 80A 305W PG-TO247-3
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| IKW75N60T | ![]() |
Hersteller: Infineon Technologies
IGBTs - Single, 600V, 80A, TO-247-3
IGBTs - Single, 600V, 80A, TO-247-3
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| SGP15N120XKSA1 |
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Hersteller: Infineon Technologies
IGBT 1200V 30A 198W TO220-3
IGBT 1200V 30A 198W TO220-3
auf Bestellung 293 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| BFR181WH6327 |
Hersteller: Infineon Technologies
RF TRANS NPN 12V 8GHZ SOT323-3
RF TRANS NPN 12V 8GHZ SOT323-3
auf Bestellung 2400 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| BFS17WH6327XTSA1 |
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Hersteller: Infineon Technologies
RF TRANS NPN 15V 1.4GHZ SOT-323
RF TRANS NPN 15V 1.4GHZ SOT-323
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| FS50R06W1E3 |
Hersteller: Infineon Technologies
600 V, 50 A sixpack IGBT module
600 V, 50 A sixpack IGBT module
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| FM25V05-G |
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Hersteller: Infineon Technologies
FRAM, 512Kb, SPI, - 40 C to + 85 C, SOIC8
FRAM, 512Kb, SPI, - 40 C to + 85 C, SOIC8
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| BTS432D2 E3062A |
Hersteller: Infineon Technologies
ИС переключателя для электропитания TO-220AB/5
ИС переключателя для электропитания TO-220AB/5
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| ITS4100S-SJ-N |
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Hersteller: Infineon Technologies
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| 1ED020I12F2XUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Output current: -2...2A
Mounting: SMD
Number of channels: 1
Case: PG-DSO-16-15
Supply voltage: 0...28V; 4.5...5.5V
Kind of package: reel; tape
Integrated circuit features: active Miller clamp; galvanically isolated
Voltage class: 0.6/1.2kV
Technology: EiceDRIVER™
Topology: single transistor
Protection: undervoltage UVP
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Output current: -2...2A
Mounting: SMD
Number of channels: 1
Case: PG-DSO-16-15
Supply voltage: 0...28V; 4.5...5.5V
Kind of package: reel; tape
Integrated circuit features: active Miller clamp; galvanically isolated
Voltage class: 0.6/1.2kV
Technology: EiceDRIVER™
Topology: single transistor
Protection: undervoltage UVP
Anzahl je Verpackung: 1 Stücke
auf Bestellung 986 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 4.33 EUR |
| 20+ | 3.72 EUR |
| 21+ | 3.42 EUR |
| 1EDC10I12MHXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -1÷1A
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Output current: -1...1A
Mounting: SMD
Number of channels: 1
Case: PG-DSO-8
Supply voltage: 3.1...17V; 13...18V
Kind of package: reel; tape
Integrated circuit features: active Miller clamp; galvanically isolated
Voltage class: 600/650/1200V
Technology: EiceDRIVER™
Topology: single transistor
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -1÷1A
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Output current: -1...1A
Mounting: SMD
Number of channels: 1
Case: PG-DSO-8
Supply voltage: 3.1...17V; 13...18V
Kind of package: reel; tape
Integrated circuit features: active Miller clamp; galvanically isolated
Voltage class: 600/650/1200V
Technology: EiceDRIVER™
Topology: single transistor
Anzahl je Verpackung: 1 Stücke
auf Bestellung 22 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 22+ | 3.25 EUR |
| 1EDC30I12MHXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -3÷3A
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Output current: -3...3A
Mounting: SMD
Number of channels: 1
Case: PG-DSO-8
Supply voltage: 3.1...17V; 13...18V
Kind of package: reel; tape
Integrated circuit features: active Miller clamp; galvanically isolated
Voltage class: 600/650/1200V
Technology: EiceDRIVER™
Topology: single transistor
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -3÷3A
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Output current: -3...3A
Mounting: SMD
Number of channels: 1
Case: PG-DSO-8
Supply voltage: 3.1...17V; 13...18V
Kind of package: reel; tape
Integrated circuit features: active Miller clamp; galvanically isolated
Voltage class: 600/650/1200V
Technology: EiceDRIVER™
Topology: single transistor
Anzahl je Verpackung: 1 Stücke
auf Bestellung 998 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 23+ | 3.15 EUR |
| 28+ | 2.56 EUR |
| 1EDC60I12AHXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -6÷6A
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Output current: -6...6A
Mounting: SMD
Number of channels: 1
Case: PG-DSO-8
Supply voltage: 3.1...17V; 13...35V
Kind of package: reel; tape
Integrated circuit features: galvanically isolated
Voltage class: 600/650/1200V
Technology: EiceDRIVER™
Topology: single transistor
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -6÷6A
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Output current: -6...6A
Mounting: SMD
Number of channels: 1
Case: PG-DSO-8
Supply voltage: 3.1...17V; 13...35V
Kind of package: reel; tape
Integrated circuit features: galvanically isolated
Voltage class: 600/650/1200V
Technology: EiceDRIVER™
Topology: single transistor
Anzahl je Verpackung: 1 Stücke
auf Bestellung 603 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 25+ | 2.92 EUR |
| 1EDI05I12AFXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Output current: -0.5...0.5A
Mounting: SMD
Number of channels: 1
Case: PG-DSO-8
Supply voltage: 3.1...17V; 13...35V
Kind of package: reel; tape
Integrated circuit features: galvanically isolated
Voltage class: 1.2kV
Technology: EiceDRIVER™
Topology: single transistor
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Output current: -0.5...0.5A
Mounting: SMD
Number of channels: 1
Case: PG-DSO-8
Supply voltage: 3.1...17V; 13...35V
Kind of package: reel; tape
Integrated circuit features: galvanically isolated
Voltage class: 1.2kV
Technology: EiceDRIVER™
Topology: single transistor
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2091 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 39+ | 1.86 EUR |
| 44+ | 1.64 EUR |
| 51+ | 1.42 EUR |
| 100+ | 1.32 EUR |
| 250+ | 1.27 EUR |
| 1EDN7512BXTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; low-side,gate driver; EiceDRIVER™
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; low-side
Technology: EiceDRIVER™
Case: PG-SOT23-5
Output current: -8...4A
Number of channels: 1
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 4.5...20V
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; low-side,gate driver; EiceDRIVER™
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; low-side
Technology: EiceDRIVER™
Case: PG-SOT23-5
Output current: -8...4A
Number of channels: 1
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 4.5...20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1797 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 122+ | 0.59 EUR |
| 126+ | 0.57 EUR |
| 1EDN7550BXTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; low-side,gate driver; EiceDRIVER™
Kind of package: reel; tape
Type of integrated circuit: driver
Technology: EiceDRIVER™
Mounting: SMD
Kind of integrated circuit: gate driver; low-side
Case: PG-SOT23-6
Topology: single transistor
Output current: -8...4A
Number of channels: 1
Supply voltage: 4.5...20V
Voltage class: 80V
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; low-side,gate driver; EiceDRIVER™
Kind of package: reel; tape
Type of integrated circuit: driver
Technology: EiceDRIVER™
Mounting: SMD
Kind of integrated circuit: gate driver; low-side
Case: PG-SOT23-6
Topology: single transistor
Output current: -8...4A
Number of channels: 1
Supply voltage: 4.5...20V
Voltage class: 80V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1370 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 70+ | 1.03 EUR |
| 79+ | 0.91 EUR |
| 87+ | 0.82 EUR |
| 102+ | 0.71 EUR |
| 250+ | 0.68 EUR |
| 500+ | 0.66 EUR |
| 1000+ | 0.62 EUR |
| 2ED020I12-FI |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; high-side,IGBT gate driver; -2÷1A
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Output current: -2...1A
Mounting: SMD
Number of channels: 2
Case: PG-DSO-18
Supply voltage: 0...5V; 14...18V
Kind of package: reel; tape
Integrated circuit features: built-in comparator; built-in operational amplifier; integrated bootstrap functionality
Voltage class: 1.2kV
Technology: EiceDRIVER™
Topology: IGBT half-bridge
Protection: undervoltage UVP
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; high-side,IGBT gate driver; -2÷1A
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Output current: -2...1A
Mounting: SMD
Number of channels: 2
Case: PG-DSO-18
Supply voltage: 0...5V; 14...18V
Kind of package: reel; tape
Integrated circuit features: built-in comparator; built-in operational amplifier; integrated bootstrap functionality
Voltage class: 1.2kV
Technology: EiceDRIVER™
Topology: IGBT half-bridge
Protection: undervoltage UVP
Anzahl je Verpackung: 1 Stücke
auf Bestellung 374 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 4.99 EUR |
| 22+ | 3.32 EUR |
| 25+ | 3.03 EUR |
| 100+ | 2.65 EUR |
| 250+ | 2.39 EUR |
| 500+ | 2.33 EUR |
| 2EDL05N06PFXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; EiceDRIVER™; PG-DSO-8; -0.7÷0.36A
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: PG-DSO-8
Output current: -0.7...0.36A
Number of channels: 2
Supply voltage: 10...20V
Mounting: SMD
Kind of package: reel; tape
Voltage class: 600V
Integrated circuit features: integrated bootstrap functionality
Technology: EiceDRIVER™
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; EiceDRIVER™; PG-DSO-8; -0.7÷0.36A
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: PG-DSO-8
Output current: -0.7...0.36A
Number of channels: 2
Supply voltage: 10...20V
Mounting: SMD
Kind of package: reel; tape
Voltage class: 600V
Integrated circuit features: integrated bootstrap functionality
Technology: EiceDRIVER™
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1254 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 39+ | 1.84 EUR |
| 44+ | 1.63 EUR |
| 49+ | 1.47 EUR |
| 100+ | 1.36 EUR |
| 2EDN7524FXTMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,gate driver; PG-DSO-8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; low-side
Technology: EiceDRIVER™
Case: PG-DSO-8
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 4.5...20V
Voltage class: 20V
Protection: undervoltage UVP
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,gate driver; PG-DSO-8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; low-side
Technology: EiceDRIVER™
Case: PG-DSO-8
Output current: -5...5A
Number of channels: 2
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 4.5...20V
Voltage class: 20V
Protection: undervoltage UVP
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1382 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 63+ | 1.14 EUR |
| 69+ | 1.04 EUR |
| 100+ | 0.97 EUR |
| 250+ | 0.93 EUR |
| 500+ | 0.84 EUR |
| 1000+ | 0.77 EUR |
| 2EDN8524FXTMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,gate driver; PG-DSO-8
Case: PG-DSO-8
Technology: EiceDRIVER™
Kind of package: reel; tape
Output current: -5...5A
Number of channels: 2
Supply voltage: 4.5...20V
Voltage class: 20V
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; low-side
Mounting: SMD
Protection: undervoltage UVP
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,gate driver; PG-DSO-8
Case: PG-DSO-8
Technology: EiceDRIVER™
Kind of package: reel; tape
Output current: -5...5A
Number of channels: 2
Supply voltage: 4.5...20V
Voltage class: 20V
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; low-side
Mounting: SMD
Protection: undervoltage UVP
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2495 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 82+ | 0.87 EUR |
| 91+ | 0.79 EUR |
| 103+ | 0.7 EUR |
| 500+ | 0.62 EUR |
| 1000+ | 0.58 EUR |
| 2N7002DWH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.3A; 0.5W; PG-SOT-363
Type of transistor: N-MOSFET x2
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.5W
Case: PG-SOT-363
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.3A; 0.5W; PG-SOT-363
Type of transistor: N-MOSFET x2
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.5W
Case: PG-SOT-363
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5065 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 239+ | 0.3 EUR |
| 338+ | 0.21 EUR |
| 394+ | 0.18 EUR |
| 556+ | 0.13 EUR |
| 644+ | 0.11 EUR |
| 895+ | 0.08 EUR |
| 1027+ | 0.07 EUR |
| 2N7002H6327XTSA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.5W; PG-SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.5W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.5W; PG-SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.5W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5757 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 500+ | 0.14 EUR |
| 610+ | 0.12 EUR |
| 676+ | 0.11 EUR |
| 916+ | 0.078 EUR |
| 1053+ | 0.068 EUR |
| 1421+ | 0.05 EUR |
| 1467+ | 0.049 EUR |
| AIGW40N65F5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Turn-on time: 30ns
Technology: TRENCHSTOP™ 5
Manufacturer series: F5
Turn-off time: 178ns
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Turn-on time: 30ns
Technology: TRENCHSTOP™ 5
Manufacturer series: F5
Turn-off time: 178ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 177 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 7.21 EUR |
| AIGW40N65H5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Kind of package: tube
Manufacturer series: H5
Turn-off time: 160ns
Gate charge: 92nC
Turn-on time: 31ns
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Kind of package: tube
Manufacturer series: H5
Turn-off time: 160ns
Gate charge: 92nC
Turn-on time: 31ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 161 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 8.82 EUR |
| 11+ | 6.94 EUR |
| 30+ | 6.38 EUR |
| 60+ | 6.05 EUR |
| 90+ | 5.91 EUR |
| AIKP20N60CTAKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 156W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 156W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Turn-on time: 32ns
Turn-off time: 241ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 156W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 156W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Turn-on time: 32ns
Turn-off time: 241ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 304 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 5 EUR |
| 17+ | 4.43 EUR |
| 18+ | 3.98 EUR |
| 50+ | 3.7 EUR |
| 250+ | 3.69 EUR |
| AUIRFB8405 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 163W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 163W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 163W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 163W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 10.21 EUR |
| 10+ | 7.15 EUR |
| 50+ | 4.43 EUR |
| AUIRGSL4062D1 |
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Hersteller: INFINEON TECHNOLOGIES
AUIRGSL4062D1 THT IGBT transistors
AUIRGSL4062D1 THT IGBT transistors
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 14.3 EUR |
| 13+ | 5.51 EUR |
| 50+ | 3.37 EUR |
| BA592E6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SOD323; single diode; reel,tape
Type of diode: switching
Max. off-state voltage: 35V
Load current: 0.1A
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Leakage current: 20nA
Capacitance: 0.6...1.4pF
Anzahl je Verpackung: 5 Stücke
Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SOD323; single diode; reel,tape
Type of diode: switching
Max. off-state voltage: 35V
Load current: 0.1A
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Leakage current: 20nA
Capacitance: 0.6...1.4pF
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2470 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 355+ | 0.2 EUR |
| 395+ | 0.18 EUR |
| 450+ | 0.16 EUR |
| 500+ | 0.15 EUR |
| 3000+ | 0.14 EUR |
| BA592E6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SOD323; single diode; reel,tape
Type of diode: switching
Max. off-state voltage: 35V
Load current: 0.1A
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Leakage current: 20nA
Capacitance: 0.6...1.4pF
Anzahl je Verpackung: 5 Stücke
Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SOD323; single diode; reel,tape
Type of diode: switching
Max. off-state voltage: 35V
Load current: 0.1A
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Leakage current: 20nA
Capacitance: 0.6...1.4pF
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2470 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 355+ | 0.2 EUR |
| 395+ | 0.18 EUR |
| 450+ | 0.16 EUR |
| 500+ | 0.15 EUR |
| 3000+ | 0.14 EUR |
| BA885E6327 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 50V; 50mA; SOT23; single diode; reel,tape
Max. off-state voltage: 50V
Load current: 50mA
Case: SOT23
Kind of package: reel; tape
Capacitance: 0.19...0.45pF
Leakage current: 20nA
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Mounting: SMD
Type of diode: switching
Anzahl je Verpackung: 1 Stücke
Category: Diodes - others
Description: Diode: switching; 50V; 50mA; SOT23; single diode; reel,tape
Max. off-state voltage: 50V
Load current: 50mA
Case: SOT23
Kind of package: reel; tape
Capacitance: 0.19...0.45pF
Leakage current: 20nA
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Mounting: SMD
Type of diode: switching
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1201 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1064+ | 0.067 EUR |
| 1087+ | 0.066 EUR |
| BA89202VH6127XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SC79; single diode; 120ns; Ufmax: 1V
Max. off-state voltage: 35V
Load current: 0.1A
Case: SC79
Kind of package: reel; tape
Max. forward voltage: 1V
Capacitance: 0.6...1.4pF
Leakage current: 20nA
Reverse recovery time: 120ns
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Mounting: SMD
Type of diode: switching
Anzahl je Verpackung: 1 Stücke
Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SC79; single diode; 120ns; Ufmax: 1V
Max. off-state voltage: 35V
Load current: 0.1A
Case: SC79
Kind of package: reel; tape
Max. forward voltage: 1V
Capacitance: 0.6...1.4pF
Leakage current: 20nA
Reverse recovery time: 120ns
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Mounting: SMD
Type of diode: switching
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2272 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 582+ | 0.12 EUR |
| 962+ | 0.074 EUR |
| 1260+ | 0.057 EUR |
| 1454+ | 0.049 EUR |
| 5000+ | 0.041 EUR |
| BAR6302VH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 50V; 100mA; 250mW; SC79; single diode; Ufmax: 1.2V
Max. off-state voltage: 50V
Load current: 0.1A
Case: SC79
Kind of package: reel; tape
Max. forward voltage: 1.2V
Power dissipation: 0.25W
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Mounting: SMD
Type of diode: switching
Anzahl je Verpackung: 1 Stücke
Category: Diodes - others
Description: Diode: switching; 50V; 100mA; 250mW; SC79; single diode; Ufmax: 1.2V
Max. off-state voltage: 50V
Load current: 0.1A
Case: SC79
Kind of package: reel; tape
Max. forward voltage: 1.2V
Power dissipation: 0.25W
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Mounting: SMD
Type of diode: switching
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5985 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 250+ | 0.29 EUR |
| 307+ | 0.23 EUR |
| 386+ | 0.19 EUR |
| 621+ | 0.12 EUR |
| 823+ | 0.087 EUR |
| 987+ | 0.073 EUR |
| 1112+ | 0.064 EUR |
| BAR6303WE6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 50V; 100mA; 250mW; SOD323; single diode
Max. off-state voltage: 50V
Load current: 0.1A
Case: SOD323
Kind of package: reel; tape
Max. forward voltage: 1.2V
Power dissipation: 0.25W
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Mounting: SMD
Type of diode: switching
Anzahl je Verpackung: 1 Stücke
Category: Diodes - others
Description: Diode: switching; 50V; 100mA; 250mW; SOD323; single diode
Max. off-state voltage: 50V
Load current: 0.1A
Case: SOD323
Kind of package: reel; tape
Max. forward voltage: 1.2V
Power dissipation: 0.25W
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Mounting: SMD
Type of diode: switching
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2144 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 385+ | 0.19 EUR |
| 511+ | 0.14 EUR |
| 575+ | 0.12 EUR |
| 667+ | 0.11 EUR |
| 820+ | 0.087 EUR |
| 834+ | 0.086 EUR |
| BAR6402VH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SC79; single diode; reel,tape
Mounting: SMD
Features of semiconductor devices: PIN; RF
Case: SC79
Type of diode: switching
Semiconductor structure: single diode
Load current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1.1V
Max. off-state voltage: 150V
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SC79; single diode; reel,tape
Mounting: SMD
Features of semiconductor devices: PIN; RF
Case: SC79
Type of diode: switching
Semiconductor structure: single diode
Load current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1.1V
Max. off-state voltage: 150V
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 209+ | 0.34 EUR |
| 334+ | 0.21 EUR |
| 556+ | 0.13 EUR |
| 685+ | 0.1 EUR |
| BAR6405WH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SOT323; Ufmax: 1.1V; reel,tape
Max. off-state voltage: 150V
Load current: 0.1A
Case: SOT323
Kind of package: reel; tape
Max. forward voltage: 1.1V
Power dissipation: 0.25W
Semiconductor structure: common cathode; double
Features of semiconductor devices: PIN; RF
Mounting: SMD
Type of diode: switching
Anzahl je Verpackung: 1 Stücke
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SOT323; Ufmax: 1.1V; reel,tape
Max. off-state voltage: 150V
Load current: 0.1A
Case: SOT323
Kind of package: reel; tape
Max. forward voltage: 1.1V
Power dissipation: 0.25W
Semiconductor structure: common cathode; double
Features of semiconductor devices: PIN; RF
Mounting: SMD
Type of diode: switching
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2465 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 334+ | 0.21 EUR |
| 391+ | 0.18 EUR |
| 447+ | 0.16 EUR |
| 468+ | 0.15 EUR |
| 1000+ | 0.13 EUR |
| 3000+ | 0.12 EUR |
| BAR6402VH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SC79; single diode; reel,tape
Mounting: SMD
Features of semiconductor devices: PIN; RF
Case: SC79
Type of diode: switching
Semiconductor structure: single diode
Load current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1.1V
Max. off-state voltage: 150V
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SC79; single diode; reel,tape
Mounting: SMD
Features of semiconductor devices: PIN; RF
Case: SC79
Type of diode: switching
Semiconductor structure: single diode
Load current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1.1V
Max. off-state voltage: 150V
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 209+ | 0.34 EUR |
| 334+ | 0.21 EUR |
| 556+ | 0.13 EUR |
| 685+ | 0.1 EUR |
| BAR6403WE6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 50V; 100mA; 250mW; SOD323; single diode
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1.2V
Max. off-state voltage: 50V
Anzahl je Verpackung: 1 Stücke
Category: Diodes - others
Description: Diode: switching; 50V; 100mA; 250mW; SOD323; single diode
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1.2V
Max. off-state voltage: 50V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 525 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 334+ | 0.21 EUR |
| 525+ | 0.14 EUR |
| BAR6404E6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SOT23; double series
Max. off-state voltage: 150V
Load current: 0.1A
Case: SOT23
Kind of package: reel; tape
Max. forward voltage: 1.1V
Power dissipation: 0.25W
Semiconductor structure: double series
Features of semiconductor devices: PIN; RF
Mounting: SMD
Type of diode: switching
Anzahl je Verpackung: 1 Stücke
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SOT23; double series
Max. off-state voltage: 150V
Load current: 0.1A
Case: SOT23
Kind of package: reel; tape
Max. forward voltage: 1.1V
Power dissipation: 0.25W
Semiconductor structure: double series
Features of semiconductor devices: PIN; RF
Mounting: SMD
Type of diode: switching
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1473 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 209+ | 0.34 EUR |
| 313+ | 0.23 EUR |
| 405+ | 0.18 EUR |
| 604+ | 0.12 EUR |
| 897+ | 0.08 EUR |
| 1000+ | 0.074 EUR |
| BAR66E6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 200mA; 250mW; SOT23; double series
Max. off-state voltage: 150V
Load current: 0.2A
Max. forward impulse current: 12A
Case: SOT23
Kind of package: reel; tape
Max. forward voltage: 1.2V
Power dissipation: 0.25W
Semiconductor structure: double series
Features of semiconductor devices: PIN
Mounting: SMD
Type of diode: switching
Anzahl je Verpackung: 1 Stücke
Category: Diodes - others
Description: Diode: switching; 150V; 200mA; 250mW; SOT23; double series
Max. off-state voltage: 150V
Load current: 0.2A
Max. forward impulse current: 12A
Case: SOT23
Kind of package: reel; tape
Max. forward voltage: 1.2V
Power dissipation: 0.25W
Semiconductor structure: double series
Features of semiconductor devices: PIN
Mounting: SMD
Type of diode: switching
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4485 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 313+ | 0.23 EUR |
| 391+ | 0.18 EUR |
| 443+ | 0.16 EUR |
| 500+ | 0.14 EUR |
| BAR81WH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 30V; 100mA; 100mW; SOT343; single diode; 80ns
Power dissipation: 0.1W
Case: SOT343
Mounting: SMD
Load current: 0.1A
Max. forward voltage: 1V
Max. off-state voltage: 30V
Semiconductor structure: single diode
Kind of package: reel; tape
Features of semiconductor devices: RF
Type of diode: switching
Reverse recovery time: 80ns
Anzahl je Verpackung: 1 Stücke
Category: Diodes - others
Description: Diode: switching; 30V; 100mA; 100mW; SOT343; single diode; 80ns
Power dissipation: 0.1W
Case: SOT343
Mounting: SMD
Load current: 0.1A
Max. forward voltage: 1V
Max. off-state voltage: 30V
Semiconductor structure: single diode
Kind of package: reel; tape
Features of semiconductor devices: RF
Type of diode: switching
Reverse recovery time: 80ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 960 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 69+ | 1.04 EUR |
| 177+ | 0.41 EUR |
| 199+ | 0.36 EUR |
| 222+ | 0.32 EUR |
| 500+ | 0.3 EUR |

















